JP2010189453A - Organometallic complex composition, composition containing organometallic complex, organic electroluminescent element, organic el display, and organic el illumination - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an organometallic complex composition having high solubility or dispersibility in a solvent and suitable for a wet film-deposition process. <P>SOLUTION: The organometallic complex composition comprises two or more different kinds of organometallic complexes expressed by formula (1). <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an organometallic complex composition used for a light emitting layer of an organic electroluminescence device.

In recent years, as a thin film type electroluminescent element, an organic electroluminescent element using an organic thin film has been developed instead of using an inorganic material. The organic electroluminescent device usually has a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, etc. between the anode and the cathode, and suitable for each layer such as red, green, blue, etc. Development of light emitting devices is progressing.
In addition, as a method for forming each layer of the organic electroluminescent element, there are a vapor deposition film forming method and a wet film forming method. The vapor deposition method has a problem in terms of yield when manufacturing a medium or large full color panel for a television or a monitor. Therefore, the wet film-forming method is suitable for these large area applications.

  However, in order to form each layer of the organic electroluminescent element by the wet film forming method, it has been desired that the material for forming each layer is dissolved in a solvent and has high performance as an element even after the wet film formation. However, many materials that have been used in the conventionally developed vapor deposition method are not suitable for the wet film formation method (see Patent Document 1). Further, simply introducing a substituent such as an alkyl group to improve the solubility does not provide performance, and further improvement in performance has been demanded.

International Publication No. 2006/014599 Pamphlet

  The present invention has been made in view of the above-described conventional situation, and an object thereof is to provide an organometallic complex composition that has high solubility and dispersibility in a solvent and is suitable for wet film formation. It is another object of the present invention to provide an organometallic complex composition in which the obtained organic electroluminescent device can maintain high performance in terms of life and durability even when used in an organic layer formed by a wet film formation method. And

As a result of intensive studies by the present inventors, it has been found that a specific organometallic complex composition can solve the above problems, and the present invention has been achieved.
That is, the present invention is an organometallic complex composition composed of two or more different organometallic complexes represented by the following formula (1), and among the organometallic complexes, the content of the smallest in the composition The present invention resides in an organometallic complex composition containing 0.1 wt% or more of an organometallic complex.

(In the formula ^(1), R 1 ~R ⁸ are closed each independently represent a hydrogen atom, or an optionally substituted hydrocarbon group, an optionally substituted alkoxy group or an optionally substituted Represents an aromatic heterocyclic group which may optionally be substituted, provided that any one of R ^{1 to} R ⁸ is a group containing an alkyl group or an alkoxy group, which may have a substituent. R ^{1 to} R ⁸ may be bonded to adjacent R ^{1 to} R ⁸ to form a ring, and a plurality of R ^{1 to} R ⁸ included in one molecule are the same. May be different.)
The present invention is also formed using the organometallic complex composition and the organometallic complex-containing composition containing the solvent, the organic electroluminescent device containing the organometallic complex composition, and the organometallic complex-containing composition. The present invention resides in an organic electroluminescent element, and an organic EL display and organic EL illumination using the organic electroluminescent element.

  According to the present invention, it is possible to provide an organometallic complex composition having high solubility and dispersibility in a solvent and suitable for wet film formation. In addition, an organic electroluminescent device using this organometallic complex composition has a high performance in terms of life and durability even if the organic electroluminescent device is an organic layer formed by a wet film forming method. Can keep.

Schematic diagram of a cross section showing a structural example of the organic electroluminescent element of the present invention

The description of the constituent requirements described below is an example (representative example) of the embodiment of the present invention, and the contents are not specified.
The present invention is an organometallic complex composition comprising two or more different organometallic complexes represented by the following formula (1), and among the organometallic complexes, the organometallic having the smallest content in the composition The present invention relates to an organometallic complex composition containing 0.1% by weight or more of a complex.

(In Formula (1), R ^{1 to} R ⁸ each independently have a hydrogen atom, a hydrocarbon group that may have a substituent, an alkoxy group that may have a substituent, or a substituent. Represents an aromatic heterocyclic group which may optionally be substituted, provided that any one of R ^{1 to} R ⁸ is a group containing an alkyl group or an alkoxy group, which may have a substituent. R ^{1 to} R ⁸ may be bonded to adjacent R ^{1 to} R ⁸ to form a ring, and a plurality of R ^{1 to} R ⁸ included in one molecule are the same. May be different.)
The organometallic complex composition of the present invention is characterized by comprising two or more different organometallic complexes represented by the formula (1). As a result, the crystallinity of the molecules is lowered, and when dissolved in a solvent, it is difficult to crystallize and it becomes easy to uniformly disperse.
Two or more different organometallic complexes represented by the formula (1) may be synthesized and combined separately.

  In addition, two or more different organometallic complexes represented by the formula (1) are mixed with a plurality of compounds used in a portion that becomes a ligand of the organometallic complex represented by the formula (1) during synthesis. It is good also as an organometallic complex composition of the present invention by obtaining two or more different organometallic complexes represented by the formula (1). When a plurality of types of compounds used in the portion to be a ligand are used, a plurality of types of complexes are mixed at the molecular level, which has a large effect of inhibiting crystallization and a large performance improvement effect.

  Among organometallic complexes represented by two or more different formulas (1) constituting the organometallic complex composition of the present invention, the organometallic complex having the smallest content in the composition is 0.1 wt% or more. It is characterized by being. Thereby, it is thought that the effect of inhibiting crystallization and uniformly dispersing is obtained. In the organometallic complex composition of the present invention, the organometallic complex having the smallest content may be contained in an amount of 0.1% by weight or more, preferably 0.2% by weight or more, more preferably 1% by weight or more. , Preferably less than 50% by weight, more preferably 30% by weight or less.

Of the organometallic complexes represented by the two or more different formulas (1) constituting the organometallic complex composition of the present invention, the most content of organometallic complex in the composition is 50% by weight or more. It is preferably contained, more preferably 70% by weight, preferably 99.9% by weight or less, more preferably 99.8% by weight or less, and particularly preferably 98% by weight or less.
Moreover, the organometallic complex represented by 2 or more types of different formula (1) which comprises the organometallic complex composition of this invention is from the organometallic complex represented by at least 2 types of formula (1) in a composition. Preferably, it is 2 or more, more preferably 5 or less.

In addition, when the organometallic complex represented by the formula (1) constituting the organometallic complex composition of the present invention is two different types, in the composition, these two types are each 50% by weight, that is, 1: 1 may be included.
Next, the organometallic complex represented by the formula (1) will be described.
In the above formula (1), at least one of R ^{1 to} R ⁸ is a group containing an alkyl group or an alkoxy group, which may have a substituent. Thereby, the solubility is improved, the molecules are dispersed well, the problem of crystallization over time is less likely to occur, and it is presumed that the effect of improving the lifetime and durability is expected.

  The alkyl group usually has 3 or more carbon atoms, preferably 4 or more, preferably 15 or less, more preferably 12 or less. Specific examples of the alkyl group may be a linear, branched, or alicyclic alkyl group, and include an n-propyl group, an epropyl group, a t-butyl group, an n-pentyl group, an n-hexyl group, and a cyclohexyl group. Group, n-octyl group and the like.

The alkoxy group usually has 3 or more carbon atoms, preferably 4 or more, preferably 15 or less, more preferably 12 or less. Specific examples of the alkoxy group are preferably linear alkoxy groups, and include n-propyloxy group, n-butoxy group, n-pentyloxy group, n-hexyloxy group, n-octyloxy group and the like.
Specific examples of the substituent for the alkyl group or the alkoxy group include those exemplified as the substituents for R ^{1 to} R ⁸ below.

In addition, the group containing an alkyl group or an alkoxy group which may have a substituent means that R ^{1 to} R ⁸ itself has an alkyl group or a substituent which may have a substituent. May be an alkoxy group, or a part of R ^{1 to} R ⁸ may be an alkyl group which may have a substituent or an alkoxy group which may have a substituent.

<R ^{1 to} R ⁸ >
R ¹ to R ⁸ are each independently a hydrogen atom, it may be an optionally substituted hydrocarbon group, an aromatic optionally having an optionally substituted alkoxy group or an optionally substituted Represents a heterocyclic group. R ^{1 to} R ⁸ are preferably a hydrogen atom or a hydrocarbon group which may have a substituent, and among the hydrocarbon groups, an alkyl group or an aromatic hydrocarbon group described in detail below is preferable.
Examples of the hydrocarbon group include a saturated hydrocarbon group, an unsaturated hydrocarbon group, and an aromatic hydrocarbon group.
Examples of the saturated hydrocarbon group include an alkyl group.

  The alkyl group usually has 1 or more carbon atoms, preferably 3 or more, more preferably 5 or more, and usually 15 or less, preferably 12 or less, more preferably 8 or less. If the lower limit is not reached, the solubility may be insufficient. If the upper limit is exceeded, there is a risk of oxidative degradation during heat treatment. It may be a linear alkyl group or a branched alkyl group. Specifically, methyl group, ethyl group, propyl group, iso-propyl group, butyl group, iso-butyl group, sec-butyl group, tert-butyl group, pentyl group, hexyl group, octyl group, cyclohexyl group, decyl And alkyl groups such as an octadecyl group.

Examples of the unsaturated hydrocarbon group include an alkenyl group and an alkynyl group.
The alkenyl group usually has 2 or more carbon atoms, preferably 3 or more, more preferably 5 or more, and usually 12 or less, preferably 10 or less, more preferably 8 or less. If it is below the lower limit, the solubility may be insufficient, and if it exceeds the upper limit, it may be oxidized and deteriorated during heat treatment. Specific examples include a vinyl group, an allyl group, and a hexenyl group.

The alkynyl group usually has 2 or more carbon atoms, preferably 3 or more, usually 8 or less, preferably 5 or less, and more preferably 3 or less. If it is below the lower limit, the solubility may be insufficient, and if it exceeds the upper limit, it may be oxidized and deteriorated during heat treatment. Specific examples include an acetylenyl group and a propynyl group.
The aromatic hydrocarbon group usually has 5 or more carbon atoms, preferably 6 or more, usually 16 or less, preferably 14 or less, and more preferably 10 or less. If the lower limit is not reached, the stability may be deteriorated, and if the upper limit is exceeded, the complex may not be formed easily. Among them, an aromatic hydrocarbon group derived from a 6-membered monocyclic ring or a 2-5 condensed ring is preferable. Specific examples include groups derived from aromatic hydrocarbons such as a benzene ring, naphthalene ring, anthracene ring, phenanthrene ring, perylene ring, tetracene ring, pyrene ring, benzpyrene ring, chrysene ring, triphenylene ring, and fluoranthene ring. In particular, a group derived from a benzene ring (phenyl group) is preferable.

  The alkoxy group usually has 1 or more carbon atoms, preferably 2 or more, usually 12 or less, preferably 10 or less, and more preferably 8 or less. If it is below the lower limit, the solubility may be insufficient, and if it exceeds the upper limit, it may be oxidized and deteriorated during heat treatment. Specific examples include alkoxy groups such as methoxy group, ethoxy group, pentyloxy group, hexyloxy group, octyloxy group, isopropyloxy group, cyclohexyloxy group, and octadecyloxy group.

  The aromatic heterocyclic group usually has 3 or more carbon atoms, preferably 4 or more, more preferably 5 or more, and usually 15 or less, preferably 12 or less, more preferably 8 or less. If the lower limit is not reached, the stability of the complex may be impaired. If the upper limit is exceeded, the complex may not be formed. Specifically, furan ring, benzofuran ring, thiophene ring, benzothiophene ring, pyrrole ring, pyrazole ring, imidazole ring, oxadiazole ring, indole ring, carbazole ring, pyrroloimidazole ring, pyrrolopyrazole ring, pyrrolopyrrole ring, Thienopyrrole ring, thienothiophene ring, furopyrrole ring, furofuran ring, thienofuran ring, benzoisoxazole ring, benzisothiazole ring, benzimidazole ring, pyridine ring, pyrazine ring, pyridazine ring, pyrimidine ring, triazine ring, quinoline ring, isoquinoline ring , A group derived from an aromatic heterocycle such as a synoline ring, a quinoxaline ring, a benzimidazole ring, a perimidine ring, a quinazoline ring, a quinazolinone ring and an azulene ring.

<Substituents for R ^{1 to} R ⁸ >
When R ^{1 to} R ⁸ are a hydrocarbon group, an alkoxy group, or an aromatic heterocyclic group, these may have a substituent. Examples of the substituent include an organic group such as an alkyl group, an aromatic hydrocarbon group, an aromatic heterocyclic group, an alkoxy group, a (hetero) aryloxy group, an alkylthio group, a (hetero) arylthio group, a cyano group, and an amino group. Can be mentioned. Among these, an alkyl group and an aromatic hydrocarbon group are preferable from the viewpoint of stability of the compound, and an aromatic hydrocarbon group is particularly preferable. The above (hetero) aryl refers to both aryl and heteroaryl.

  The alkyl group is preferably an alkyl group having 1 to 20 carbon atoms, specifically, methyl group, ethyl group, propyl group, iso-propyl group, butyl group, iso-butyl group, sec-butyl group, tert group. -A butyl group, a pentyl group, a hexyl group, an octyl group, a cyclohexyl group, a decyl group, an octadecyl group, etc. are mentioned. Among them, pentyl groups such as n-pentyl group, hexyl groups such as n-hexyl group and 2-ethylhexyl group are preferable because they have high solubility in nonpolar solvents.

As the aromatic hydrocarbon group, an aromatic hydrocarbon group having 6 to 25 carbon atoms is preferable, and an aromatic hydrocarbon group derived from a 6-membered monocyclic ring or a 2-5 condensed ring is preferable. Examples thereof include groups derived from aromatic hydrocarbons such as a benzene ring, naphthalene ring, anthracene ring, phenanthrene ring, perylene ring, tetracene ring, pyrene ring, benzpyrene ring, chrysene ring, triphenylene ring, and fluoranthene ring.

  The aromatic heterocyclic group is preferably an aromatic hydrocarbon group having 3 to 20 carbon atoms. Specifically, furan ring, benzofuran ring, thiophene ring, benzothiophene ring, pyrrole ring, pyrazole ring, imidazole ring, oxadiazole ring, indole ring, carbazole ring, pyrroloimidazole ring, pyrrolopyrazole ring, pyrrolopyrrole ring, Thienopyrrole ring, thienothiophene ring, furopyrrole ring, furofuran ring, thienofuran ring, benzoisoxazole ring, benzisothiazole ring, benzimidazole ring, pyridine ring, pyrazine ring, pyridazine ring, pyrimidine ring, triazine ring, quinoline ring, isoquinoline ring , A group derived from an aromatic heterocycle such as a synoline ring, a quinoxaline ring, a benzimidazole ring, a perimidine ring, a quinazoline ring, a quinazolinone ring and an azulene ring.

As this alkoxy group, a C1-C20 alkoxy group is preferable, and a methoxy group, an ethoxy group, an isopropyloxy group, a cyclohexyloxy group, an octadecyloxy group etc. are mentioned specifically ,.
The (hetero) aryloxy group is preferably a (hetero) aryloxy group having 3 to 20 carbon atoms, and specifically includes a phenoxy group, a 1-naphthyloxy group, a 9-anthranyloxy group, and a 2-thienyloxy group. Etc.

The alkylthio group is preferably an alkylthio group having 1 to 20 carbon atoms, and specific examples include a methylthio group, an ethylthio group, an isopropylthio group, and a cyclohexylthio group.
The (hetero) arylthio group is preferably a (hetero) arylthio group having 3 to 20 carbon atoms, and examples thereof include a phenylthio group, a 1-naphthylthio group, a 9-anthranylthio group, and a 2-thienylthio group.

R ^{1 to} R ⁸ may be bonded to adjacent R ^{1 to} R ⁸ to form a ring. Examples of the ring include a benzene ring, a naphthalene ring, and a pyridine ring.
In the above formula (1), any one of R ^{5 to} R ⁸ is an alkyl group which may have a substituent, and in particular, R ⁷ may have a substituent. An alkyl group is preferable for the stability of the complex, and R ⁷ is more preferably an alkyl group which may have a substituent.

R ³ is preferably an aromatic hydrocarbon group which may have a substituent for the stability of the complex, and among the aromatic hydrocarbon groups, a group derived from a benzene ring (phenyl group) is preferable. .
<Molecular weight>
The molecular weight of the organometallic complex represented by the above formula (1) is usually 850 or more, preferably 900 or more, usually 3000 or less, preferably 2000 or less. If the upper limit is exceeded, the stability of the complex may be significantly deteriorated.

<Specific example>
Specific examples of the organometallic complex represented by the above formula (1) are shown below, but the present invention is not limited to the following.
First, specific examples of ligands constituting the organometallic complex are shown as L1 to L100.
In addition, thereafter, in the organometallic complex, A1 to A45 are shown as organometallic complexes having the same three ligands. Next, B1 is the same as two different organometallic complexes with the same ligand.
-B45 (two are ligand 1 and one is ligand 2). Finally, C1 to C45 are shown as organometallic complexes having three different ligands. The ligands in these tables are specific examples L1 to L100 of the above ligands.

In the following ^R 1 to R ⁸ in the table correspond to ^R 1 to R ⁸ in the ligand used in the equation (1). In the table, H is a hydrogen atom.

<Specific examples of organometallic complexes>

<Synthesis method>
As a synthesis method of the organometallic complex represented by the above formula (1), the following method can be used.

For example, due Suzuki coupling, such as a pyridine derivative and a phenyl boronic acid derivative to synthesize a phenylpyridine derivative is a ligand, further phenylpyridine derivative in glycerol, heated at IrCl ₃ hydrate and 200 to 250 ° C. It can synthesize | combine by the method to do. As a purification method and the like, a generally known method can be used.

<Organic metal complex-containing composition>
Since the organometallic complex composition of the present invention is excellent in solubility, it is preferably used together with a solvent. Hereinafter, the composition (organometallic complex-containing composition) containing the organometallic complex composition of the present invention and a solvent will be described.
The organometallic complex-containing composition of the present invention contains the above-described organometallic complex of the present invention and a solvent. The organometallic complex-containing composition of the present invention is usually used for forming a layer or a film by a wet film forming method, and particularly preferably used for forming an organic layer of an organic electroluminescent element. The organic layer is particularly preferably a light emitting layer.

  The content of the organometallic complex composition of the present invention in the organometallic complex-containing composition is usually 0.1% by weight or more, preferably 1% by weight or more, usually 99.99% by weight or less, preferably 99.9% by weight. % Or less. By setting the content of the organometallic complex in the composition within this range, holes and electrons are efficiently injected from the adjacent layer (for example, hole transport layer or hole blocking layer) to the light emitting layer, The driving voltage can be reduced.

The solvent contained in the organometallic complex-containing composition of the present invention is a volatile liquid component used for forming a layer containing an organometallic complex by wet film formation.
The solvent is not particularly limited as long as it is a solvent in which the organometallic complex composition of the present invention, which is a solute, and the charge transporting compound described below are well dissolved, but preferred solvents include the following.

For example, alkanes such as n-decane, cyclohexane, ethylcyclohexane, decalin, and bicyclohexane; aromatic hydrocarbons such as toluene, xylene, methicylene, cyclohexylbenzene, and tetralin; halogenated aroma such as chlorobenzene, dichlorobenzene, and trichlorobenzene Group hydrocarbons: 1,2-dimethoxybenzene, 1,3-dimethoxybenzene, anisole, phenetole, 2-methoxytoluene, 3-methoxytoluene, 4-methoxytoluene, 2,3-dimethylanisole, 2,4-dimethyl Aromatic ethers such as anisole and diphenyl ether; aromatic esters such as phenyl acetate, phenyl propionate, methyl benzoate, ethyl benzoate, ethyl benzoate, propyl benzoate, and n-butyl benzoate; Alicyclic ketones such as Sanone, Cyclooctanone and Fencon; Alicyclic alcohols such as cyclohexanol and cyclooctanol; Aliphatic ketones such as methyl ethyl ketone and dibutyl ketone; Aliphatic alcohols such as butanol and hexanol; Ethylene And aliphatic ethers such as glycol dimethyl ether, ethylene glycol diethyl ether, and propylene glycol-1-monomethyl ether acetate (PGMEA).

Of these, alkanes and aromatic hydrocarbons are preferable.
One of these solvents may be used alone, or two or more thereof may be used in any combination and ratio.
The boiling point of the solvent is usually 80 ° C. or higher, preferably 100 ° C. or higher, more preferably 150 ° C. or higher, and particularly preferably 200 ° C. or higher. The boiling point is usually 270 ° C. or lower, preferably 250 ° C. or lower, more preferably 230 ° C. or lower. Below this range, film formation stability may be reduced by evaporation of the solvent from the composition during wet film formation.

  The content of the solvent is preferably 10 parts by weight or more, more preferably 50 parts by weight or more, particularly preferably 80 parts by weight or more, and preferably 99.95 parts by weight or less, based on 100 parts by weight of the composition. The amount is preferably 99.9 parts by weight or less, particularly preferably 99.8 parts by weight or less. When the content of the solvent is below this lower limit, the viscosity of the composition becomes too high, and the film forming workability may be lowered. On the other hand, if the upper limit is exceeded, the film thickness obtained by removing the solvent after film formation cannot be obtained, and thus film formation tends to be difficult.

When the organometallic complex-containing composition of the present invention is used for, for example, an organic electroluminescent element, it contains a charge transporting compound used for an organic electroluminescent element, particularly a light emitting layer, in addition to the above-described organometallic complex and solvent. be able to.
When forming the light emitting layer of an organic electroluminescent element using the organometallic complex-containing composition of the present invention, the organometallic complex composition of the present invention is used as a dopant material, and another charge transporting compound is used as a host material. It is preferable to include.

  As other charge transporting compounds that can be contained in the organometallic complex-containing composition of the present invention, those conventionally used as materials for organic electroluminescence devices can be used. For example, pyridine, carbazole, naphthalene, perylene, pyrene, anthracene, chrysene, naphthacene, phenanthrene, coronene, fluoranthene, benzophenanthrene, fluorene, acetonaphthofluoranthene, coumarin, p-bis (2-phenylethenyl) benzene and the like Derivatives, quinacridone derivatives, DCM (4- (dicyanomethylene) -2-methyl-6- (p-dimethylaminostyryl) -4H-pyran) compounds, benzopyran derivatives, rhodamine derivatives, benzothioxanthene derivatives, azabenzothioxanthene, aryl Examples thereof include a condensed aromatic ring compound substituted with an amino group, a styryl derivative substituted with an arylamino group, and the like.

One of these may be used alone, or two or more may be used in any combination and ratio.
The content of the other charge transporting compound in the organometallic complex-containing composition of the present invention is such that the composition is 1
When it is 00 parts by weight, it is usually 1 part by weight or more, usually 50 parts by weight or less, preferably 30 parts by weight or less.

The content of the other charge transporting compound in the organometallic complex-containing composition is usually 50% by weight or less, particularly 30% by weight, based on the organometallic complex composition of the present invention in the organometallic complex-containing composition. % Or less, usually 0.01% by weight or more, and particularly preferably 0.1% by weight or more.
The organometallic complex-containing composition of the present invention may further contain other compounds, if necessary, in addition to the above-mentioned compounds. For example, in addition to the above solvent, another solvent may be contained. Examples of such a solvent include amides such as N, N-dimethylformamide and N, N-dimethylacetamide, and dimethyl sulfoxide. One of these may be used alone, or two or more may be used in any combination and ratio.

Moreover, the organometallic complex containing composition of this invention may contain various additives, such as a leveling agent and an antifoamer, for the purpose of improving film forming property.
<Application>
The organometallic complex composition of the present invention can be suitably used as a material used for an organic electroluminescent device, that is, an organic electroluminescent device material, and is also suitable as a luminescent material for an organic electroluminescent device and other light emitting devices. It can be used.

<Organic electroluminescent device>
The organic electroluminescent device of the present invention is characterized in that on a substrate, an organic layer is provided between an anode and the anode and the cathode, and the organic layer contains the organometallic complex composition of the present invention. To do. In particular, the organic layer is preferably a layer formed using the organometallic complex-containing composition of the present invention. The organic layer may be any of a hole injection layer, a hole transport layer, a light emitting layer, a hole blocking layer, an electron transport layer and the like as described in detail below, but contains the organometallic complex composition of the present invention. The organic layer is preferably a light emitting layer.

Below, the layer structure of the organic electroluminescent element of this invention, its general formation method, etc. are demonstrated with reference to FIG.
FIG. 1 is a schematic cross-sectional view showing a structural example of an organic electroluminescent device according to the present invention. In FIG. 1, 1 is a substrate, 2 is an anode, 3 is a hole injection layer, 4 is a hole transport layer, 5 Represents a light-emitting layer, 6 represents a hole blocking layer, 7 represents an electron transport layer, 8 represents an electron injection layer, and 9 represents a cathode.

  In the present invention, the wet film forming method includes, for example, spin coating method, dip coating method, die coating method, bar coating method, blade coating method, roll coating method, spray coating method, capillary coating method, ink jet method, screen printing. This method is a wet film formation method such as a method, a gravure printing method, or a flexographic printing method. Among these film forming methods, a spin coating method, a spray coating method, and an ink jet method are preferable. This is because the liquid property specific to the coating composition used in the organic electroluminescence device is matched.

(substrate)
The substrate 1 serves as a support for the organic electroluminescent element, and a quartz or glass plate, a metal plate or a metal foil, a plastic film, a sheet, or the like is used. In particular, a glass plate or a transparent synthetic resin plate such as polyester, polymethacrylate, polycarbonate, polysulfone or the like is preferable. When using a synthetic resin substrate, it is necessary to pay attention to gas barrier properties. If the gas barrier property of the substrate is too small, the organic electroluminescent element may be deteriorated by the outside air that has passed through the substrate, which is not preferable. For this reason, a method of providing a gas barrier property by providing a dense silicon oxide film or the like on at least one surface of the synthetic resin substrate is also a preferable method.

(anode)
The anode 2 serves to inject holes into the layer on the light emitting layer side.
This anode 2 is usually made of a metal such as aluminum, gold, silver, nickel, palladium, platinum, a metal oxide such as an oxide of indium and / or tin, a metal halide such as copper iodide,
It is composed of carbon black or a conductive polymer such as poly (3-methylthiophene), polypyrrole, or polyaniline.

  In general, the anode 2 is often formed by a sputtering method, a vacuum deposition method, or the like. In addition, when forming the anode 2 using fine metal particles such as silver, fine particles such as copper iodide, carbon black, conductive metal oxide fine particles, and conductive polymer fine powder, an appropriate binder resin solution It is also possible to form the anode 2 by dispersing it and applying it onto the substrate 1. Furthermore, in the case of a conductive polymer, a thin film can be directly formed on the substrate 1 by electrolytic polymerization, or the anode 2 can be formed by applying a conductive polymer on the substrate 1 (Appl. Phys. Lett. 60, 2711, 1992).

The anode 2 usually has a single-layer structure, but it can also have a laminated structure made of a plurality of materials if desired.
The thickness of the anode 2 varies depending on the required transparency. When transparency is required, the visible light transmittance is usually 60% or more, preferably 80% or more. In this case, the thickness of the anode 2 is usually 5 nm or more, preferably 10 nm or more, and is usually 1000 nm or less, preferably about 500 nm or less. When it may be opaque, the thickness of the anode 2 is arbitrary, and the anode 2 may be the same as the substrate 1. Furthermore, it is also possible to laminate different conductive materials on the anode 2 described above.

For the purpose of removing impurities adhering to the anode 2 and adjusting the ionization potential to improve the hole injection property, the surface of the anode 2 is treated with ultraviolet (UV) / ozone, or with oxygen plasma or argon plasma. It is preferable to do.
(Hole injection layer)
The hole injection layer 3 is a layer that transports holes from the anode 2 to the light emitting layer 5, and is usually formed on the anode 2.

The method for forming the hole injection layer 3 according to the present invention may be a vacuum deposition method or a wet film formation method, and is not particularly limited, but the hole injection layer 3 is formed by a wet film formation method from the viewpoint of reducing dark spots. It is preferable.
The thickness of the hole injection layer 3 is usually 5 nm or more, preferably 10 nm or more, and usually 1000 nm or less, preferably 500 nm or less.

<Formation of hole injection layer by wet film formation method>
When forming the hole injection layer 3 by wet film formation, the material for forming the hole injection layer 3 is usually mixed with an appropriate solvent (hole injection layer solvent) to form a film-forming composition (positive A composition for forming a hole injection layer), and applying the composition for forming a hole injection layer on a layer (usually an anode) corresponding to the lower layer of the hole injection layer 3 by an appropriate technique. The hole injection layer 3 is formed by coating and drying.

(Hole transporting compound)
The composition for forming a hole injection layer usually contains a hole transporting compound and a solvent as constituent materials of the hole injection layer.
As long as the hole transporting compound is a compound having a hole transporting property, which is usually used in a hole injection layer of an organic electroluminescence device, a monomer or the like may be a polymer compound or the like. Although it may be a low molecular weight compound, it is preferably a high molecular weight compound.

  The hole transporting compound is preferably a compound having an ionization potential of 4.5 eV to 6.0 eV from the viewpoint of a charge injection barrier from the anode 2 to the hole injection layer 3. Examples of hole transporting compounds include aromatic amine derivatives, phthalocyanine derivatives, porphyrin derivatives, oligothiophene derivatives, polythiophene derivatives, benzylphenyl derivatives, compounds in which tertiary amines are linked by a fluorene group, hydrazone derivatives, silazane derivatives, silanamines Derivatives, phosphamine derivatives, quinacridone derivatives, polyaniline derivatives, polypyrrole derivatives, polyphenylene vinylene derivatives, polythienylene vinylene derivatives, polyquinoline derivatives, polyquinoxaline derivatives, carbon and the like.

In the present invention, the derivative includes, for example, an aromatic amine derivative and includes an aromatic amine itself and a compound having an aromatic amine as a main skeleton. It may be a mer.
The hole transporting compound used as the material for the hole injection layer 3 may contain any one of these compounds alone, or may contain two or more. When two or more hole transporting compounds are contained, the combination thereof is arbitrary, but one or more aromatic tertiary amine polymer compounds and one or two other hole transporting compounds are used. It is preferable to use the above in combination.

Among the above-mentioned examples, an aromatic amine compound is preferable from the viewpoint of amorphousness and visible light transmittance, and an aromatic tertiary amine compound is particularly preferable. Here, the aromatic tertiary amine compound is a compound having an aromatic tertiary amine structure, and includes a compound having a group derived from an aromatic tertiary amine.
The type of the aromatic tertiary amine compound is not particularly limited, but from the viewpoint of uniform light emission due to the surface smoothing effect, a polymer compound having a weight average molecular weight of 1,000 or more and 1,000,000 or less (a polymerizable compound in which repeating units are linked) is further included. preferable. Preferable examples of the aromatic tertiary amine polymer compound include a polymer compound having a repeating unit represented by the following formula (I).

(In Formula (I), Ar ¹ and Ar ² each independently represent an aromatic hydrocarbon group which may have a substituent or an aromatic heterocyclic group which may have a substituent. Ar ^{3 to} Ar ⁵ each independently represents an aromatic hydrocarbon group which may have a substituent or an aromatic heterocyclic group which may have a substituent. Represents a linking group selected from the group of linking groups, and among Ar ^{1 to} Ar ⁵ , two groups bonded to the same N atom may be bonded to each other to form a ring.

(In said each formula, Ar < ⁶ > -Ar < ¹⁶ > represents each independently the aromatic hydrocarbon group which may have a substituent, or the aromatic heterocyclic group which may have a substituent. R ¹ and R ² each independently represents a hydrogen atom or an arbitrary substituent.))
As the aromatic hydrocarbon group and the aromatic heterocyclic group of Ar ^{1 to} Ar ¹⁶ , a benzene ring, a naphthalene ring, a phenanthrene ring, a thiophene from the viewpoint of the solubility, heat resistance, hole injection / transport property of the polymer compound A group derived from a ring or a pyridine ring is preferred, and a group derived from a benzene ring or a naphthalene ring is more preferred.

The aromatic hydrocarbon group and aromatic heterocyclic group of Ar ^{1 to} Ar ¹⁶ may further have a substituent. The molecular weight of the substituent is usually 400 or less, preferably about 250 or less. As the substituent, an alkyl group, an alkenyl group, an alkoxy group, an aromatic hydrocarbon group, an aromatic heterocyclic group and the like are preferable.
When R ¹ and R ² are optional substituents, examples of the substituent include an alkyl group, an alkenyl group, an alkoxy group, a silyl group, a siloxy group, an aromatic hydrocarbon group, and an aromatic heterocyclic group. .

Specific examples of the aromatic tertiary amine polymer compound having a repeating unit represented by the formula (I) include those described in International Publication No. 2005/089024.
In addition, as a hole transporting compound, a conductive polymer (PEDOT / PSS) obtained by polymerizing 3,4-ethylenedioxythiophene (3,4-ethylenedioxythiophene), a polythiophene derivative, in high molecular weight polystyrene sulfonic acid. Is also preferred. Moreover, the end of this polymer may be capped with methacrylate or the like.

  The concentration of the hole transporting compound in the composition for forming a hole injection layer is arbitrary as long as the effect of the present invention is not significantly impaired, but is usually 0.01% by weight or more, preferably in terms of film thickness uniformity. Is 0.1% by weight or more, more preferably 0.5% by weight or more, and usually 70% by weight or less, preferably 60% by weight or less, more preferably 50% by weight or less. If this concentration is too high, film thickness unevenness may occur, and if it is too low, defects may occur in the formed hole injection layer.

(Electron-accepting compound)
The composition for forming a hole injection layer preferably contains an electron accepting compound as a constituent material of the hole injection layer.
The electron-accepting compound is preferably a compound having an oxidizing power and the ability to accept one electron from the above-described hole transporting compound, specifically, a compound having an electron affinity of 4 eV or more is preferable, and 5 eV or more. The compound which is the compound of these is further more preferable.

Examples of such electron-accepting compounds include triarylboron compounds, metal halides, Lewis acids, organic acids, onium salts, salts of arylamines and metal halides, and salts of arylamines and Lewis acids. Examples thereof include one or more compounds selected from the group. More specifically, an onium salt substituted with an organic group such as 4-isopropyl-4′-methyldiphenyliodonium tetrakis (pentafluorophenyl) borate, triphenylsulfonium tetrafluoroborate (International Publication No. WO 2005/089024); High-valent inorganic compounds such as iron (III) chloride (Japanese Patent Laid-Open No. 11-251067), ammonium peroxodisulfate; cyano compounds such as tetracyanoethylene; Aromatic boron compounds such as); fullerene derivatives; iodine; sulfonate ions such as polystyrene sulfonate ions, alkylbenzene sulfonate ions, camphor sulfonate ions, and the like.

These electron accepting compounds can improve the conductivity of the hole injection layer by oxidizing the hole transporting compound.
The content of the electron-accepting compound in the hole-injecting layer or the composition for forming a hole-injecting layer with respect to the hole-transporting compound is usually 0.1 mol% or more, preferably 1 mol% or more. However, it is usually 100 mol% or less, preferably 40 mol% or less.

(Other components)
As a material for the hole injection layer, other components may be further contained in addition to the above-described hole transporting compound and electron accepting compound as long as the effects of the present invention are not significantly impaired. Examples of other components include various light emitting materials, electron transporting compounds, binder resins, and coating property improving agents. In addition, only 1 type may be used for another component and it may use 2 or more types together by arbitrary combinations and a ratio.

(solvent)
At least one of the solvents of the composition for forming a hole injection layer used in the wet film formation method is preferably a compound that can dissolve the constituent material of the hole injection layer. The boiling point of this solvent is usually 110 ° C. or higher, preferably 140 ° C. or higher, particularly 200 ° C. or higher, usually 400 ° C. or lower, and preferably 300 ° C. or lower. If the boiling point of the solvent is too low, the drying speed is too high and the film quality may be deteriorated. Further, if the boiling point of the solvent is too high, it is necessary to increase the temperature of the drying step, which may adversely affect other layers and the substrate.

Examples of the solvent include ether solvents, ester solvents, aromatic hydrocarbon solvents, amide solvents, and the like.
Examples of ether solvents include aliphatic ethers such as ethylene glycol dimethyl ether, ethylene glycol diethyl ether, and propylene glycol-1-monomethyl ether acetate (PGMEA); 1,2-dimethoxybenzene, 1,3-dimethoxybenzene, anisole , Phenetole, 2-methoxytoluene, 3-methoxytoluene, 4-methoxytoluene, 2,3-dimethylanisole, aromatic ethers such as 2,4-dimethylanisole, and the like.

Examples of the ester solvent include aromatic esters such as phenyl acetate, phenyl propionate, methyl benzoate, ethyl benzoate, propyl benzoate, and n-butyl benzoate.
Examples of the aromatic hydrocarbon solvent include toluene, xylene, cyclohexylbenzene, 3-isopropylpropylphenyl, 1,2,3,4-tetramethylbenzene, 1,4-diisopropylbenzene, cyclohexylbenzene, and methylnaphthalene. Can be mentioned.

Examples of the amide solvent include N, N-dimethylformamide, N, N-dimethylacetamide, and the like.
In addition, dimethyl sulfoxide and the like can also be used.
These solvent may use only 1 type and may use 2 or more types by arbitrary combinations and a ratio.

(Film formation method)
After preparing the composition for forming the hole injection layer, the composition is applied on the layer corresponding to the lower layer of the hole injection layer 3 (usually the anode 2) by wet film formation, and dried. The hole injection layer 3 is formed.
The temperature in the film forming step is preferably 10 ° C. or higher, and preferably 50 ° C. or lower, in order to prevent film loss due to the formation of crystals in the composition.

Although the relative humidity in a film-forming process is not limited unless the effect of this invention is impaired remarkably, it is 0.01 ppm or more normally and 80% or less normally.
After the film formation, the film of the composition for forming a hole injection layer is usually dried by heating or the like. Examples of the heating means used in the heating step include a clean oven, a hot plate, infrared rays, a halogen heater, microwave irradiation and the like. Among them, a clean oven and a hot plate are preferable in order to uniformly apply heat to the entire film.

  The heating temperature in the heating step is preferably heated at a temperature equal to or higher than the boiling point of the solvent used in the composition for forming a hole injection layer as long as the effects of the present invention are not significantly impaired. In the case of a mixed solvent containing two or more types of solvents used in the hole injection layer, at least one type is preferably heated at a temperature equal to or higher than the boiling point of the solvent. In consideration of an increase in the boiling point of the solvent, the heating step is preferably performed at 120 ° C. or higher, preferably 410 ° C. or lower.

  In the heating step, the heating time is not limited as long as the heating temperature is not lower than the boiling point of the solvent of the composition for forming a hole injection layer and sufficient insolubilization of the coating film does not occur. Is less than a minute. If the heating time is too long, the components of the other layers tend to diffuse, and if it is too short, the hole injection layer tends to be inhomogeneous. Heating may be performed in two steps.

<Formation of hole injection layer by vacuum deposition>
When the hole injection layer 3 is formed by vacuum deposition, one or more of the constituent materials of the hole injection layer 3 (the aforementioned hole transporting compound, electron accepting compound, etc.) are placed in a vacuum container. Put in crucibles installed (in case of using two or more materials, put them in each crucible), evacuate the inside of the vacuum vessel to about 10 ⁻⁴ Pa with a suitable vacuum pump, and then heat the crucible (two types When using the above materials, heat each crucible) and evaporate by controlling the amount of evaporation (when using two or more materials, evaporate by independently controlling the amount of evaporation) and face the crucible Then, the hole injection layer 3 is formed on the anode 2 of the substrate placed on the substrate. In addition, when using 2 or more types of materials, the hole injection layer 3 can also be formed by putting those mixtures into a crucible, heating and evaporating.

The degree of vacuum at the time of vapor deposition is not limited as long as the effect of the present invention is not significantly impaired.
It is not less than × 10 ⁻⁶ Torr (0.13 × 10 ⁻⁴ Pa) and usually not more than 9.0 × 10 ⁻⁶ Torr (12.0 × 10 ⁻⁴ Pa). The deposition rate is not limited as long as the effect of the present invention is not significantly impaired, but is usually 0.1 Å / second or more and usually 5.0 Å / second or less. The film forming temperature at the time of vapor deposition is not limited as long as the effect of the present invention is not significantly impaired, but is preferably 10 ° C. or higher, preferably 50 ° C. or lower.

(Hole transport layer)
The method for forming the hole transport layer 4 according to the present invention may be a vacuum deposition method or a wet film formation method, and is not particularly limited, but the hole transport layer 4 is formed by a wet film formation method from the viewpoint of reducing dark spots. It is preferable.
The hole transport layer 4 can be formed on the hole injection layer 3 when there is a hole injection layer and on the anode 2 when there is no hole injection layer 3. The organic electroluminescent device of the present invention may have a configuration in which the hole transport layer is omitted.

  The material for forming the hole transport layer 4 is preferably a material having high hole transportability and capable of efficiently transporting injected holes. Therefore, it is preferable that the ionization potential is small, the transparency to visible light is high, the hole mobility is large, the stability is high, and impurities that become traps are not easily generated during manufacturing or use. In many cases, it is preferable not to quench the light emitted from the light emitting layer 5 or to form an exciplex with the light emitting layer 5 to reduce the efficiency because it is in contact with the light emitting layer 5.

  The material for the hole transport layer 4 may be any material conventionally used as a constituent material for the hole transport layer. For example, the hole transport property used for the hole injection layer 3 described above. What was illustrated as a compound is mentioned. In addition, arylamine derivatives, fluorene derivatives, spiro derivatives, carbazole derivatives, pyridine derivatives, pyrazine derivatives, pyrimidine derivatives, triazine derivatives, quinoline derivatives, phenanthroline derivatives, phthalocyanine derivatives, porphyrin derivatives, silole derivatives, oligothiophene derivatives, condensed polycyclic aromatics Group derivatives, metal complexes and the like.

  Also, for example, polyvinylcarbazole derivatives, polyarylamine derivatives, polyvinyltriphenylamine derivatives, polyfluorene derivatives, polyarylene derivatives, polyarylene ether sulfone derivatives containing tetraphenylbenzidine, polyarylene vinylene derivatives, polysiloxane derivatives, polythiophenes Derivatives, poly (p-phenylene vinylene) derivatives, and the like. These may be any of an alternating copolymer, a random polymer, a block polymer, or a graft copolymer. Further, it may be a polymer having a branched main chain and three or more terminal portions, or a so-called dendrimer.

Of these, polyarylamine derivatives and polyarylene derivatives are preferred.
The polyarylamine derivative is preferably a polymer containing a repeating unit represented by the following formula (II). In particular, the polymer is preferably a polymer composed of a repeating unit represented by the following formula (II). In this case, Ar ^a or Ar ^b may be different in each repeating unit.

(In Formula (II), Ar ^a and Ar ^b each independently represent an aromatic hydrocarbon group or an aromatic heterocyclic group which may have a substituent.)
Examples of the aromatic hydrocarbon group which may have a substituent include a benzene ring, a naphthalene ring, an anthracene ring, a phenanthrene ring, a perylene ring, a tetracene ring, a pyrene ring, a benzpyrene ring, a chrysene ring, a triphenylene ring, and an acenaphthene. Examples thereof include a group derived from a 6-membered monocyclic ring or a 2-5 condensed ring, such as a ring, a fluoranthene ring, a fluorene ring, and a group in which two or more rings are connected by a direct bond.

  Examples of the aromatic heterocyclic group which may have a substituent include a furan ring, a benzofuran ring, a thiophene ring, a benzothiophene ring, a pyrrole ring, a pyrazole ring, an imidazole ring, an oxadiazole ring, an indole ring, and a carbazole ring. , Pyrroloimidazole ring, pyrrolopyrazole ring, pyrrolopyrrole ring, thienopyrrole ring, thienothiophene ring, furopyrrole ring, furofuran ring, thienofuran ring, benzoisoxazole ring, benzoisothiazole ring, benzimidazole ring, pyridine ring, pyrazine ring, pyridazine Ring, pyrimidine ring, triazine ring, quinoline ring, isoquinoline ring, sinoline ring, quinoxaline ring, phenanthridine ring, benzimidazole ring, perimidine ring, quinazoline ring, quinazolinone ring, azulene ring, etc. Or a group and the rings of from 2-4 fused rings include groups formed by connecting a direct bond or two or more rings.

In view of solubility and heat resistance, Ar ^a and Ar ^b are each independently selected from the group consisting of a benzene ring, naphthalene ring, anthracene ring, phenanthrene ring, triphenylene ring, pyrene ring, thiophene ring, pyridine ring, and fluorene ring. A group derived from a selected ring or a group formed by linking two or more benzene rings (for example, a biphenyl group or a terphenyl group) is preferable.
Among these, a group derived from a benzene ring (phenyl group), a group formed by connecting two benzene rings (biphenyl group), and a group derived from a fluorene ring (fluorenyl group) are preferable.

Examples of the substituent that the aromatic hydrocarbon group and the aromatic heterocyclic group in Ar ^a and Ar ^b may have include an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an aryloxy group, an alkoxycarbonyl group, and a dialkyl. Examples thereof include an amino group, a diarylamino group, an acyl group, a halogen atom, a haloalkyl group, an alkylthio group, an arylthio group, a silyl group, a siloxy group, a cyano group, an aromatic hydrocarbon ring group, and an aromatic heterocyclic group.

As the polyarylene derivative, an arylene group such as an aromatic hydrocarbon group or an aromatic heterocyclic group which may have a substituent exemplified as Ar ^a or Ar ^b in the formula (II) is used as its repeating unit. The polymer which has is mentioned.
As a polyarylene derivative, the polymer which has a repeating unit which consists of following formula (III-1) and / or following formula (III-2) is preferable.

(In the formula (III-1), R ^a , R ^b , R ^c and R ^d each independently represents an alkyl group, an alkoxy group, a phenylalkyl group, a phenylalkoxy group, a phenyl group, a phenoxy group,
An alkylphenyl group, an alkoxyphenyl group, an alkylcarbonyl group, an alkoxycarbonyl group, or a carboxy group is represented. t and s each independently represent an integer of 0 to 3. When t or s is 2 or more, a plurality of R ^a or R ^b contained in one molecule may be the same or different, and adjacent R ^a or R ^b may form a ring. Good. )

(In Formula (III-2), R ^e and R ^f are each independently the same as R ^a , R ^b , R ^c or R ^d in Formula (III-1) above. Independently, it represents an integer of 0 to 3. When r or u is 2 or more, a plurality of R ^e and R ^f contained in one molecule may be the same or different, and adjacent R ^e or R ^f may form a ring, and X represents an atom or a group of atoms constituting a 5-membered ring or a 6-membered ring.)
Specific examples of X include an oxygen atom, a boron atom which may have a substituent, a nitrogen atom which may have a substituent, a silicon atom which may have a substituent, and a substituent. A phosphorus atom which may be substituted, a sulfur atom which may have a substituent, a carbon atom which may have a substituent, or a group formed by bonding these.

  The polyarylene derivative has a repeating unit represented by the following formula (III-3) in addition to the repeating unit represented by the following formula (III-1) and / or the following formula (III-2). Is preferred.

(In the formula (III-3), Ar ^{c to} Ar ^j each independently represents an aromatic hydrocarbon group or an aromatic heterocyclic group which may have a substituent. Independently represents 0 or 1.)
Specific examples of Ar ^{c to} Ar ^j are the same as Ar ^a and Ar ^b in the formula (II).

Specific examples of the above formulas (III-1) to (III-3) and specific examples of polyarylene derivatives include those described in JP-A-2008-98619.
In the case of forming the hole transport layer 4 by a wet film formation method, a composition for forming a hole transport layer is prepared in the same manner as the formation of the hole injection layer 3 and then heated and dried after the wet film formation. .
The composition for forming a hole transport layer contains a solvent in addition to the above hole transport compound. The solvent used is the same as that used for the composition for forming a hole injection layer. The film forming conditions, heat drying conditions, and the like are the same as in the case of forming the hole injection layer 3.

In the case where the hole transport layer is formed by the vacuum deposition method, the film forming conditions are the same as those in the case of forming the hole injection layer 3.
The hole transport layer 4 may contain various light emitting materials, electron transport compounds, binder resins, coating property improving agents, and the like in addition to the hole transport compound.
The hole transport layer 4 may also be a layer formed by crosslinking a crosslinkable compound. The crosslinkable compound is a compound having a crosslinkable group, and forms a network polymer compound by crosslinking.

Examples of this crosslinkable group include groups derived from cyclic ethers such as oxetane and epoxy; groups derived from unsaturated double bonds such as vinyl, trifluorovinyl, styryl, acrylic, methacryloyl and cinnamoyl; benzo Examples include groups derived from cyclobutene.
The crosslinkable compound may be any of a monomer, an oligomer, and a polymer. The crosslinkable compound may have only 1 type, and may have 2 or more types by arbitrary combinations and ratios.

  As the crosslinkable compound, a hole transporting compound having a crosslinkable group is preferably used. Examples of the hole transporting compound include those exemplified above, and those having a crosslinkable group bonded to the main chain or side chain with respect to these hole transporting compounds. In particular, the crosslinkable group is preferably bonded to the main chain via a linking group such as an alkylene group. In particular, the hole transporting compound is preferably a polymer containing a repeating unit having a crosslinkable group, and the above formula (II) and formulas (III-1) to (III-3) can be used as a crosslinkable group. Is preferably a polymer having a repeating unit bonded directly or via a linking group.

  As the crosslinkable compound, a hole transporting compound having a crosslinkable group is preferably used. Examples of hole transporting compounds include nitrogen-containing aromatic compound derivatives such as pyridine derivatives, pyrazine derivatives, pyrimidine derivatives, triazine derivatives, quinoline derivatives, phenanthroline derivatives, carbazole derivatives, phthalocyanine derivatives, porphyrin derivatives; triphenylamine derivatives Silole derivatives; oligothiophene derivatives, condensed polycyclic aromatic derivatives, metal complexes and the like. Among them, nitrogen-containing aromatic derivatives such as pyridine derivatives, pyrazine derivatives, pyrimidine derivatives, triazine derivatives, quinoline derivatives, phenanthroline derivatives, carbazole derivatives; triphenylamine derivatives, silole derivatives, condensed polycyclic aromatic derivatives, metal complexes, etc. Particularly preferred are triphenylamine derivatives.

In order to form the hole transport layer 4 by crosslinking the crosslinkable compound, a composition for forming a hole transport layer in which the crosslinkable compound is dissolved or dispersed in a solvent is usually prepared and deposited by wet film formation. To crosslink.
The composition for forming a hole transport layer may contain an additive for promoting a crosslinking reaction in addition to the crosslinking compound. Examples of additives that accelerate the crosslinking reaction include polymerization initiators and polymerization accelerators such as alkylphenone compounds, acylphosphine oxide compounds, metallocene compounds, oxime ester compounds, azo compounds, onium salts; condensed polycyclic hydrocarbons, And photosensitizers such as porphyrin compounds and diaryl ketone compounds.

Further, it may contain a coating property improving agent such as a leveling agent and an antifoaming agent; an electron accepting compound; a binder resin;
In the composition for forming a hole transport layer, the crosslinkable compound is usually 0.01% by weight or more, preferably 0.05% by weight or more, more preferably 0.1% by weight or more, usually 50% by weight or less, preferably 20%. It is contained by weight% or less, more preferably 10% by weight or less.

After forming a composition for forming a hole transport layer containing a crosslinkable compound at such a concentration on the lower layer (usually the hole injection layer 3), the composition is crosslinked by heating and / or irradiation with electromagnetic energy such as light. Are crosslinked to form a network polymer compound.
Conditions such as temperature and humidity during film formation are the same as those during the wet film formation of the hole injection layer 3.
The heating method after film formation is not particularly limited. As heating temperature conditions, it is 120 degreeC or more normally, Preferably it is 400 degrees C or less.

The heating time is usually 1 minute or longer, preferably 24 hours or shorter. The heating means is not particularly limited, and means such as placing a laminated body having a deposited layer on a hot plate or heating in an oven is used. For example, conditions such as heating on a hot plate at 120 ° C. or more for 1 minute or more can be used.
In the case of irradiation with electromagnetic energy such as light, a method of irradiating directly using an ultraviolet / visible / infrared light source such as an ultra-high pressure mercury lamp, a high-pressure mercury lamp, a halogen lamp or an infrared lamp, or the above-mentioned light source is incorporated. Examples include a mask aligner and a method of irradiation using a conveyor type light irradiation device. In electromagnetic energy irradiation other than light, for example, there is a method of irradiation using a device that irradiates a microwave generated by a magnetron, a so-called microwave oven. As the irradiation time, it is preferable to set conditions necessary for reducing the solubility of the film, but irradiation is usually performed for 0.1 seconds or longer, preferably 10 hours or shorter.

Heating and irradiation of electromagnetic energy such as light may be performed individually or in combination. When combined, the order of implementation is not particularly limited.
The film thickness of the hole transport layer 4 thus formed is usually 5 nm or more, preferably 10 nm or more, and usually 300 nm or less, preferably 100 nm or less.
(Light emitting layer)
When the hole injection layer 3 or the hole transport layer 4 is provided, the light emitting layer 5 is provided on the hole transport layer 4. The light emitting layer 5 is a layer that is excited by recombination of holes injected from the anode 2 and electrons injected from the cathode 9 between electrodes to which an electric field is applied, and becomes a main light emitting source.

<Light emitting layer material>
The light emitting layer 5 contains at least a material having a light emitting property (light emitting material) as a constituent material, and preferably a compound having a hole transporting property (hole transporting compound) or an electron transport. A compound (electron transporting compound) having the following properties: A light emitting material may be used as a dopant material, and a hole transporting compound, an electron transporting compound, or the like may be used as a host material. There is no particular limitation on the light-emitting material, and a material that emits light at a desired light emission wavelength and has high light emission efficiency may be used. However, the organometallic complex composition of the present invention is preferably used.

In particular, in the organic electroluminescent element of the present invention, the light emitting layer is preferably formed by a wet film forming method using the organometallic complex-containing composition of the present invention.
Furthermore, the light emitting layer 5 may contain other components as long as the effects of the present invention are not significantly impaired. In addition, when forming the light emitting layer 5 with a wet film-forming method, it is preferable to use a low molecular weight material (molecular weight is usually 10,000 or less, preferably 5000 or less).

<Formation of light emitting layer>
When forming the light emitting layer 5 by a wet film-forming method, the material used for the light emitting layer is dissolved in an appropriate solvent to form a composition for forming a light emitting layer (in the case of containing the organometallic complex composition of the present invention, containing an organometallic complex). It is formed by preparing a composition) and forming a film using it.
The light-emitting layer solvent contained in the light-emitting layer forming composition for forming the light-emitting layer 5 by the wet film-forming method according to the present invention is described as the solvent contained in the organometallic complex-containing composition of the present invention. It is the same as what I did.

The solid content concentration of the light emitting material, charge transporting compound, etc. in the composition for forming a light emitting layer is usually 0.01% by weight or more and usually 70% by weight or less. If this concentration is too large, film thickness unevenness may occur, and if it is too small, defects may occur in the film.
After wet-deposition of the composition for forming a light emitting layer, the resulting coating film is dried and the solvent is removed to form a light emitting layer. Specifically, it is the same as the method described in the formation of the hole injection layer. The method of the wet film forming method is not limited as long as the effect of the present invention is not significantly impaired, and any of the methods described above can be used.

The thickness of the light emitting layer 5 is arbitrary as long as the effect of the present invention is not significantly impaired, but is usually 3 nm or more, preferably 5 nm or more, and usually 200 nm or less, preferably 100 nm or less. If the thickness of the light emitting layer 5 is too thin, defects may occur in the film, and if it is too thick, the driving voltage may increase.
(Hole blocking layer)
A hole blocking layer 6 may be provided between the light emitting layer 5 and an electron injection layer 8 described later. The hole blocking layer 6 is a layer laminated on the light emitting layer 5 so as to be in contact with the interface of the light emitting layer 5 on the cathode 9 side.

The hole blocking layer 6 has a role of blocking holes moving from the anode 2 from reaching the cathode 9 and a role of efficiently transporting electrons injected from the cathode 9 toward the light emitting layer 5. Have
The physical properties required for the material constituting the hole blocking layer 6 include high electron mobility, low hole mobility, a large energy gap (difference between HOMO and LUMO), and excited triplet level (T1). Is high. Examples of the material for the hole blocking layer satisfying such conditions include bis (2-methyl-8-quinolinolato) (phenolato) aluminum, bis (2-methyl-8-quinolinolato) (triphenylsilanolato) aluminum, and the like. Mixed metal complexes such as bis (2-methyl-8-quinolato) aluminum-μ-oxo-bis- (2-methyl-8-quinolinato) aluminum binuclear metal complexes, distyrylbiphenyl derivatives, etc. Triazole derivatives such as styryl compounds (JP-A-11-242996), 3- (4-biphenylyl) -4-phenyl-5 (4-tert-butylphenyl) -1,2,4-triazole (JP-A-7 -41759), phenanthroline derivatives such as bathocuproine (JP-A-10-79297), and the like. That. Further, a compound having at least one pyridine ring substituted at positions 2, 4, and 6 described in International Publication No. 2005-022962 is also preferable as a material for the hole blocking layer 6.

In addition, the material of the hole-blocking layer 6 may use only 1 type, and may use 2 or more types together by arbitrary combinations and ratios.
There is no restriction | limiting in the formation method of the hole-blocking layer 6. FIG. Therefore, it can be formed by a wet film forming method, a vapor deposition method, or other methods.
The thickness of the hole blocking layer 6 is arbitrary as long as the effect of the present invention is not significantly impaired, but is usually 0.3 nm or more, preferably 0.5 nm or more, and usually 100 nm or less, preferably 50 nm or less.
A hole relaxation layer may be provided in place of the hole blocking layer.

(Electron transport layer)
An electron transport layer 7 may be provided between the light emitting layer 5 and an electron injection layer 8 described later.
The electron transport layer 7 is provided for the purpose of further improving the light emission efficiency of the device, and efficiently transports electrons injected from the cathode 9 between the electrodes to which an electric field is applied in the direction of the light emitting layer 5. Formed from a compound capable of

  As an electron transport compound used for the electron transport layer 7, usually, the electron injection efficiency from the cathode 9 or the electron injection layer 8 is high, and the injected electrons are transported efficiently with high electron mobility. The compound which can be used is used. Examples of the compound satisfying such conditions include metal complexes such as aluminum complexes of 8-hydroxyquinoline (Japanese Patent Laid-Open No. 59-194393), metal complexes of 10-hydroxybenzo [h] quinoline, oxadiazole derivatives , Distyrylbiphenyl derivatives, silole derivatives, 3-hydroxyflavone metal complexes, 5-hydroxyflavone metal complexes, benzoxazole metal complexes, benzothiazole metal complexes, trisbenzimidazolylbenzene (US Pat. No. 5,645,948), quinoxaline compounds ( JP-A-6-207169), phenanthroline derivative (JP-A-5-331459), 2-t-butyl-9,10-N, N'-dicyanoanthraquinonediimine, n-type hydrogenated amorphous silicon carbide , N-type zinc sulfide, n-type zinc Such as emissions of zinc, and the like.

In addition, the material of the electron carrying layer 7 may use only 1 type, and may use 2 or more types together by arbitrary combinations and a ratio.
There is no restriction | limiting in the formation method of the electron carrying layer 7. FIG. Therefore, it can be formed by a wet film forming method, a vapor deposition method, or other methods.
The film thickness of the electron transport layer 7 is arbitrary as long as the effect of the present invention is not significantly impaired, but is usually 1 nm or more, preferably 5 nm or more, and usually 300 nm or less, preferably 100 nm or less.

(Electron injection layer)
The electron injection layer 8 plays a role of efficiently injecting electrons injected from the cathode 9 into the light emitting layer 5. In order to perform electron injection efficiently, the material for forming the electron injection layer 8 is preferably a metal having a low work function. Examples include alkali metals such as sodium and cesium, and alkaline earth metals such as barium and calcium. Examples include lithium fluoride (LiF), magnesium fluoride (MgF ₂ ), lithium oxide (Li ₂ O), cesium carbonate (II) (CsCO ₃ ), and the like (Applied Physics Letters, 1997, Vol. 70, pp. 152; Japanese Patent Laid-Open No. 10-74586; see IEEE Transactions on Electron Devices, 1997, Vol. 44, pp. 1245; SID 04 Digest, pp. 154, etc.). The film thickness is usually preferably from 0.1 nm to 5 nm.

  Furthermore, an organic electron transport compound represented by a metal complex such as a nitrogen-containing heterocyclic compound such as bathophenanthroline or an aluminum complex of 8-hydroxyquinoline is doped with an alkali metal such as sodium, potassium, cesium, lithium, or rubidium ( (As described in JP-A-10-270171, JP-A-2002-1000047, JP-A-2002-1000048, etc.), it is possible to improve the electron injection / transport properties and achieve excellent film quality. preferable. In this case, the film thickness is usually 5 nm or more, preferably 10 nm or more, and is usually 200 nm or less, preferably 100 nm or less.

In addition, the material of the electron injection layer 8 may use only 1 type, and may use 2 or more types together by arbitrary combinations and a ratio.
There is no restriction | limiting in the formation method of the electron injection layer 8. FIG. Therefore, it can be formed by a wet film forming method, a vapor deposition method, or other methods.

(cathode)
The cathode 9 plays a role of injecting electrons into a layer (such as the electron injection layer 8 or the light emitting layer 5) on the light emitting layer 5 side.
As the material of the cathode 9, it is possible to use the material used for the anode 2,
For efficient electron injection, a metal having a low work function is preferable. For example, a suitable metal such as tin, magnesium, indium, calcium, aluminum, silver, or an alloy thereof is used. Specific examples include low work function alloy electrodes such as magnesium-silver alloy, magnesium-indium alloy, and aluminum-lithium alloy.

In addition, the material of the cathode 9 may use only 1 type, and may use 2 or more types together by arbitrary combinations and a ratio.
The film thickness of the cathode 9 is usually the same as that of the anode 2.
Further, for the purpose of protecting the cathode 9 made of a low work function metal, it is preferable to further stack a metal layer having a high work function and stable to the atmosphere because the stability of the device is increased. For this purpose, for example, metals such as aluminum, silver, copper, nickel, chromium, gold and platinum are used. In addition, these materials may be used only by 1 type and may use 2 or more types together by arbitrary combinations and a ratio.

(Other layers)
The organic electroluminescent element according to the present invention may have another configuration without departing from the gist thereof. For example, as long as the performance is not impaired, an arbitrary layer may be provided between the anode 2 and the cathode 9 in addition to the layers described above, and an arbitrary layer may be omitted. .

(Electron blocking layer)
Examples of the layer that may be included include an electron blocking layer.
The electron blocking layer is provided between the hole injection layer 3 or the hole transport layer 4 and the light emitting layer 5 and prevents electrons moving from the light emitting layer 5 from reaching the hole injection layer 3. Thus, the probability of recombination of holes and electrons in the light emitting layer 5 is increased, the excitons generated are confined in the light emitting layer 5, and the holes injected from the hole injection layer 3 are efficiently collected. There is a role to transport in the direction of. In particular, when a phosphorescent material or a blue light emitting material is used as the light emitting material, it is effective to provide an electron blocking layer.

  The characteristics required for the electron blocking layer include high hole transportability, a large energy gap (difference between HOMO and LUMO), and a high excited triplet level (T1). Furthermore, in the present invention, when the light emitting layer 5 is formed as an organic layer according to the present invention by a wet film formation method, the electron blocking layer is also required to be compatible with the wet film formation. Examples of the material used for such an electron blocking layer include a copolymer of dioctylfluorene and triphenylamine typified by F8-TFB (International Publication No. 2004/084260).

In addition, the material of an electron blocking layer may use only 1 type, and may use 2 or more types together by arbitrary combinations and a ratio.
There is no restriction | limiting in the formation method of an electron blocking layer. Therefore, it can be formed by a wet film forming method, a vapor deposition method, or other methods.
Moreover, in the layer structure demonstrated above, it is also possible to laminate | stack components other than a board | substrate in reverse order. For example, in the case of the layer configuration in FIG. The hole injection layer 3 and the anode 2 may be provided in this order.

Furthermore, it is also possible to constitute the organic electroluminescent element according to the present invention by laminating components other than the substrate between two substrates, at least one of which is transparent.
Further, a structure in which a plurality of components (light emitting units) other than the substrate are stacked in a plurality of layers (a structure in which a plurality of light emitting units are stacked) may be employed. In that case, instead of the interface layer between the steps (between the light emitting units) (when the anode is ITO and the cathode is Al, these two layers), for example, a charge made of vanadium pentoxide (V ₂ O ₅ ) or the like. When a generation layer (Carrier Generation Layer: CGL) is provided, a barrier between steps is reduced, which is more preferable from the viewpoint of light emission efficiency and driving voltage.

Furthermore, the organic electroluminescent device according to the present invention may be configured as a single organic electroluminescent device, or may be applied to a configuration in which a plurality of organic electroluminescent devices are arranged in an array. You may apply to the structure by which the cathode is arrange | positioned at XY matrix form.
Each layer described above may contain components other than those described as materials unless the effects of the present invention are significantly impaired.

  The organic electroluminescent element of the present invention is used for organic EL displays and organic EL lighting. The organic electroluminescent device obtained by the present invention is described in, for example, “Organic EL Display” (Ohm, August 20, 2004, written by Shizushi Tokito, Chiba Adachi, and Hideyuki Murata). An organic EL display and organic EL illumination can be formed by the method.

Examples The present invention will be described more specifically with reference to examples. However, the present invention is not limited to the description of the following examples unless it exceeds the gist.
(Synthesis Example 1) Synthesis of organometallic complex Q-1

4-n-Hexylphenylbromide 6.03 g (0.02)
5 mol) was dissolved in 100 ml of dryTHF (tetrahydrofuran) and bubbled with nitrogen for 10 minutes. To this, 50 ml (0.025 mol) of 0.5M 2-Pyridylzincbromide was added, and after bubbling with nitrogen for 10 minutes, 0.321 g (0.275 mmol) of Tetrakis (tetraphenylphosphino) palladium was added and nitrogen was added for 5 hours. Lower reflux. After the reaction solution was concentrated, column purification was performed with ethyl acetate / hexane = 1/10 to obtain 5 g of 2- (4′-n-Hexylphenyl) pyridine (the above compound 1, yield 83%, purity 99.8%). .

2.011 g (8.4 mmol) of Compound 1 obtained above and 14 ml of glycerin were charged, and dehydration and deaeration were performed at 150 ° C. for about 60 minutes. After allowing to cool, 31.253 g (2.8 mmol) of Ir (acac) ₃ (acac: acetylacetone) was added thereto, and the mixture was heated to 200 ° C. and reacted for 14 hours (confirmation of distillation of acetylacetone). ). The temperature was lowered to about 60 ° C., methanol was added, and the crystallized crystals were collected by filtration. The obtained crude crystals were column purified with hexane / CH ₂ Cl ₂ = 1/1, and reprecipitated with dimethyl ether and methanol to obtain Q-1 yellow crystals, 0.85 g (yield 33%). . This was purified by sublimation to obtain 0.65 g of an organometallic complex Q-1.

(Synthesis Example 2) Synthesis of Organometallic Complex Composition D-1 of the Present Invention-Instead of 6.03 g (0.025 mol) of n-hexylphenyl bromide, 5.91 g (0.0245 mol) of 4-n-hexylphenyl bromide ) And 2-n-hexylphenyl bromide 0.12 g (0.0005 mol) was used in the same manner as in Synthesis Example 1 to obtain 0.6 g of an organometallic complex composition D-1. It was.

The obtained organometallic complex composition D-1 had a peak area of 3% derived from other than Q-1 in HPLC.
The organometallic complex composition D-1 was a mixture of Q-1 and Q-2 shown below, and Q-1 was 97 wt% and Q-2 was 3 wt% in the composition.

Example 1 Production of Organic Electroluminescent Device
The organic electroluminescent element shown in FIG. 1 was produced (however, a hole relaxation layer was used instead of the hole blocking layer).
An indium tin oxide (ITO) transparent conductive film deposited on a glass substrate to a thickness of 120 nm (manufactured by Sanyo Vacuum Co., Ltd., sputtered film) using ordinary photolithography technology and hydrochloric acid etching An anode was formed by patterning into a stripe having a width of 2 mm. The patterned ITO substrate is cleaned in the order of ultrasonic cleaning with an aqueous surfactant solution, water cleaning with ultrapure water, ultrasonic cleaning with ultrapure water, and water cleaning with ultrapure water, followed by drying with compressed air, and finally UV irradiation. Ozone cleaning was performed.

  First, a hole transporting polymer compound having a repeating structure represented by the structural formula P1 as a hole transporting compound (weight average molecular weight: 26500, number average molecular weight: 12000), and an electron accepting compound represented by the structural formula 4- A composition for forming a hole injection layer containing isopropyl-4′-methyldiphenyliodonium tetrakis (pentafluorophenyl) borate and ethyl benzoate was prepared. In this composition, the hole transporting polymer compound P1 was 2.0% by weight, and the electron accepting compound A1 was 0.8% by weight. This composition was formed by spin coating on the anode in the air at a spinner rotation speed of 1500 rpm and a spinner rotation time of 30 seconds. Then, the hole injection layer with a film thickness of 30 nm was obtained by heat-drying at 230 degreeC for 3 hours in air | atmosphere.

  Subsequently, a crosslinkable compound (polymer) H1 (weight average molecular weight: 95000) represented by the following structural formula as a hole transporting compound and toluene as a solvent were prepared. The solid content concentration of the crosslinkable compound in the composition was 0.4% by weight. This composition was formed on the hole injection layer formed as described above by spin coating at a spinner rotation speed of 1500 rpm and a spinner rotation time of 30 seconds in nitrogen, and crosslinked by heating at 230 ° C. for 1 hour in nitrogen. A crosslinked film (hole transport layer) having a thickness of 20 nm was formed.

  Next, in forming the light emitting layer, the charge transporting compound E-1, the charge transporting compound E-2, and the organometallic complex composition D-1 of the present invention synthesized in Synthesis Example 2 shown in the following structural formulas are used. And a composition for forming a light emitting layer (organometallic complex-containing composition) containing cyclohexylbenzene as a solvent. In the composition, the charge transporting compound E-1 was 2.5% by weight, the charge transporting compound E-2 was 2.5% by weight, and the organometallic complex composition D-1 was 0.25% by weight. This composition was formed on the hole transport layer formed as described above by spin coating at a spinner rotation speed of 1500 rpm, a spinner rotation time of 30 seconds and in nitrogen, and then at 130 ° C. under reduced pressure (0.1 MPa). It dried for 1 hour and obtained the light emitting layer with the film thickness of 60 nm.

Here, after the substrate on which the hole injection layer, the hole transport layer, and the light emitting layer are formed is transferred into a vacuum deposition apparatus, and the apparatus is roughly evacuated by an oil rotary pump, the degree of vacuum in the apparatus is 5.1. After evacuating using a cryopump until the pressure is lower than or equal to × 10 ⁻⁴ Pa, a compound represented by the following structural formula C-3 is formed on the light emitting layer by vacuum deposition and relaxed by 5 nm thick holes. A layer was obtained. The deposition rate was controlled in the range of 0.7 to 1.0 kg / second, and the degree of vacuum during the deposition was 1.9 to 2.0 × 10 ⁻⁴ Pa.

Subsequently, tris (8-hydroxyquinolinate) aluminum was heated and evaporated on the hole relaxation layer to form a 30 nm-thick electron transport layer. The degree of vacuum during vapor deposition was 1.3 × 10 ⁻⁴ Pa, and the vapor deposition rate was controlled in the range of 0.6 to 1.0 kg / second.
Here, the element that has been vapor-deposited up to the electron transport layer is once taken out from the vacuum vapor deposition apparatus to the atmosphere, and a 2 mm wide stripe-shaped shadow mask is orthogonal to the ITO stripe of the anode 2 as a mask for cathode vapor deposition. In close contact with the element, it was placed in another vacuum vapor deposition apparatus and evacuated until the degree of vacuum in the apparatus was 2.1 × 10 ⁻⁴ Pa or less in the same manner as the electron transport layer.

As the electron injection layer, lithium fluoride (LiF) was controlled using a molybdenum boat at a deposition rate of 0.07 to 0.17 liters / second and a degree of vacuum of 2.3 to 2.4 × 10 ⁻⁴ Pa. A film having a thickness of 5 nm was formed on the electron transport layer.
Next, aluminum as a cathode is similarly heated by a molybdenum boat and controlled at a deposition rate of 0.7 to 6.1 liters / second and a degree of vacuum of 2.3 to 2.7 × 10 ⁻⁴ Pa. An aluminum layer was formed. The substrate temperature during the above two-layer deposition was kept at room temperature.

Subsequently, a sealing process was performed to prevent the element from being deteriorated by moisture in the atmosphere during storage. As described above, an organic electroluminescent element having a light emitting area portion having a size of 2 mm × 2 mm was obtained.
The maximum wavelength of the emission spectrum of the device was 520 nm, which was identified as a peak characteristic of the Ir complex. The chromaticity was CIE (x, y) = (0.33, 0.62). 4000 cd /
The half life at m ² was 600 hours.

It was found that the half-life was longer than that of the organometallic complex used in the comparative example.
(Comparative Example 1)
An organic electroluminescent element was produced in the same manner as in Example 1 except that the organometallic complex composition D-1 was replaced with the organometallic complex Q-1 synthesized in Synthesis Example 1.
Table A shows the relative ratio of the half-life of the organic electroluminescent element obtained in Example 1 when the half-life of the organic electroluminescent element obtained in Comparative Example 1 is 1. It has been found that an organic electroluminescent device using the organometallic complex composition of the present invention has a long half-life.

2. Substrate anode Hole injection layer 4. 4. hole transport layer Light emitting layer 6. 6. Hole blocking layer Electron transport layer8. Electron injection layer 9. cathode

Claims (7)

It is an organometallic complex composition comprising two or more different organometallic complexes represented by the following formula (1), and among the organometallic complexes, the organometallic complex having the smallest content in the composition is 0. An organometallic complex composition comprising 1% by weight or more.

(In the formula ^(1), R 1 ~R ⁸ are closed each independently represent a hydrogen atom, or an optionally substituted hydrocarbon group, an optionally substituted alkoxy group or an optionally substituted Represents an aromatic heterocyclic group which may optionally be substituted, provided that any one of R ^{1 to} R ⁸ is a group containing an alkyl group or an alkoxy group, which may have a substituent. R ^{1 to} R ⁸ may be bonded to adjacent R ^{1 to} R ⁸ to form a ring, and a plurality of R ^{1 to} R ⁸ included in one molecule are the same. May be different.) In the above formula (1), R ^7, characterized in that the substituted is also an alkyl group, an organic metal complex composition according to claim 1.   3. An organometallic complex-containing composition, wherein the organometallic complex composition according to claim 1 or 2 further contains a solvent.   In the organic electroluminescent element which has an organic layer between an anode, a cathode, and this anode and this cathode on a board | substrate, this organic layer contains the organometallic complex composition of Claim 1 or 2 characterized by the above-mentioned. An organic electroluminescent element.   In the organic electroluminescent element which has an organic layer between an anode, a cathode, and this anode and this cathode on the board | substrate, this organic layer was formed using the organometallic complex containing composition of Claim 3 An organic electroluminescent element characterized by the above.   The organic electroluminescent display using the organic electroluminescent element of Claim 4 or 5.   Organic EL illumination using the organic electroluminescent element according to claim 4 or 5.

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