JP2010186928A - Sheet-fed type spin cleaning method and cleaning apparatus for semiconductor substrate - Google Patents
Sheet-fed type spin cleaning method and cleaning apparatus for semiconductor substrate Download PDFInfo
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Abstract
Description
本発明は、枚葉式スピン洗浄による半導体基板の洗浄技術に関する。 The present invention relates to a semiconductor substrate cleaning technique by single wafer spin cleaning.
半導体製造プロセスにおいて半導体基板表面への汚染物質の付着は半導体デバイスの歩留まりやデバイス特性を低下させる要因となっており、このために洗浄は半導体基板の清浄度を向上させる必要不可欠なプロセスである。デバイス構造の微細化が進むにつれ求められる清浄度はますます高くなり、半導体製造プロセスおいて洗浄工程は重要度を増している。 In the semiconductor manufacturing process, the adhesion of contaminants to the surface of the semiconductor substrate is a factor that deteriorates the yield and device characteristics of the semiconductor device. For this reason, the cleaning is an indispensable process for improving the cleanliness of the semiconductor substrate. As the device structure becomes finer, the degree of cleanliness required is increasing, and the cleaning process is becoming more important in the semiconductor manufacturing process.
半導体基板の洗浄方法としては多槽からなる浸漬式のバッチ洗浄であるＲＣＡ洗浄が良く知られている。半導体基板が要求される清浄度が高くなるにつれ、浸漬式のバッチ洗浄では被洗浄物である半導体基板自身からのクロスコンタミが問題となってくる。特に汚染レベルの高い半導体基板を洗浄する際には、このクロスコンタミは非常に大きな問題となる。
また、例えばＳＯＱ(Silicon On Quartz)のような異種複合基板では、洗浄溶液中における異種基板間のゼータ電位の違いから基板表面から除去した汚染物が他種の基板表面上への再付着が起こりやすく、洗浄後の基板表面上の清浄度の悪化の原因となる。
As a method for cleaning a semiconductor substrate, RCA cleaning which is immersion batch cleaning composed of multiple tanks is well known. As the degree of cleanliness required of a semiconductor substrate increases, cross contamination from the semiconductor substrate itself, which is the object to be cleaned, becomes a problem in immersion batch cleaning. In particular, when cleaning a semiconductor substrate having a high contamination level, this cross contamination becomes a very big problem.
Also, for example, in a heterogeneous composite substrate such as SOQ (Silicon On Quartz), contaminants removed from the substrate surface due to the difference in zeta potential between different substrates in the cleaning solution reattach to the surface of other types of substrates. It is easy to cause deterioration of cleanliness on the substrate surface after cleaning.
枚葉式は、基板を１枚ずつ処理する方式であり、枚葉式スピン洗浄法では、このような浸漬式のバッチ洗浄におけるクロスコンタミの問題は解決される。しかしながら、例えばサンドブラストの様な処理を行った汚染レベルの高い半導体基板の洗浄を行う場合、通常の超音波印加やフッ化水素酸、アルカリ洗浄液では汚染を完全に除去するのは難しく、また洗浄時間を長くする必要がある。洗浄時間が長くなることは枚葉式においてはプロセスのスループットの観点から大きな問題である。
また、洗浄効果を向上させるために通常行われているように枚葉式スピン洗浄において超音波振動子を有するノズルから洗浄液、特にフッ化水素酸のようにシリコンの自然酸化膜を除去する効果があるものを用いると、撥水性である活性な表面が暴露される。この暴露された活性表面はパーティクルが付着しやすく汚染の原因となってしまう。
本発明は、汚染度の高い半導体基板を洗浄する際に、枚葉式スピン洗浄によりパーティクルの発生を抑えながら清浄度を向上させることができ、且つスループットの低下を抑えることができる半導体基板の洗浄方法や洗浄装置を提供する。
The single-wafer method is a method of processing substrates one by one, and the single-wafer spin cleaning method solves the problem of cross contamination in such immersion batch cleaning. However, when cleaning a semiconductor substrate with a high contamination level, such as sandblasting, for example, it is difficult to completely remove the contamination with normal ultrasonic application, hydrofluoric acid, or alkaline cleaning solution, and the cleaning time Need to be long. The long cleaning time is a big problem from the viewpoint of process throughput in the single wafer type.
In addition, as is usually done to improve the cleaning effect, the single-wafer spin cleaning has an effect of removing a cleaning liquid, particularly a silicon natural oxide film such as hydrofluoric acid, from a nozzle having an ultrasonic vibrator. With some, an active surface that is water repellent is exposed. This exposed active surface tends to adhere to particles and causes contamination.
The present invention, when cleaning a highly contaminated semiconductor substrate, can improve the cleanness while suppressing the generation of particles by single-wafer spin cleaning, and it is possible to suppress a decrease in throughput. Provide methods and cleaning equipment.
本発明によれば、半導体基板を回転させながら上記半導体基板の表面に純水を供給し、同時に上記半導体基板の表面に超音波を印加しながらフッ化水素酸水溶液を上記半導体基板の表面に供給して、上記表面の全面に上記純水の皮膜を形成させてパーティクル付着を防止し上記半導体基板の表面の洗浄を行う半導体基板の枚葉式スピン洗浄方法を提供できる。
また、本発明によれば、半導体基板を保持して回転させるスピンチャックと、上記半導体基板の表面に超音波を印加したフッ化水素酸水溶液を供給できる少なくとも１つの超音波振動子付ノズルと、上記超音波振動子付ノズルを上記半導体基板の中心部内側から上記半導体基板の外郭の外側まで揺動できる上記超音波振動子付ノズルに接続されたアームと、上記半導体基板の表面に純水を供給できる上記超音波振動子付ノズルとは別の少なくとも１つノズルとを備え、上記半導体基板の表面の全面に上記純水の皮膜を形成させてパーティクル付着を防止し上記半導体基板の表面の洗浄を行うことができる半導体基板の枚葉式スピン洗浄装置を提供できる。
なお、枚葉式は、基板を１枚ずつ処理する方式であり、プロセス処理の高精度化やウエーハの大口径化に伴い，従来のバッチ式から枚葉式へ移行する工程が増えている。
According to the present invention, pure water is supplied to the surface of the semiconductor substrate while rotating the semiconductor substrate, and at the same time, an aqueous hydrofluoric acid solution is supplied to the surface of the semiconductor substrate while applying ultrasonic waves to the surface of the semiconductor substrate. Thus, it is possible to provide a single wafer spin cleaning method for a semiconductor substrate in which the pure water film is formed on the entire surface to prevent adhesion of particles and to clean the surface of the semiconductor substrate.
Further, according to the present invention, the spin chuck for holding and rotating the semiconductor substrate, at least one nozzle with an ultrasonic transducer capable of supplying a hydrofluoric acid aqueous solution in which ultrasonic waves are applied to the surface of the semiconductor substrate, Pure water is applied to the surface of the semiconductor substrate, an arm connected to the nozzle with the ultrasonic transducer that can swing the nozzle with the ultrasonic transducer from the inside of the center of the semiconductor substrate to the outside of the outline of the semiconductor substrate. At least one nozzle different from the nozzle with the ultrasonic transducer that can be supplied, and forming a film of the pure water on the entire surface of the semiconductor substrate to prevent adhesion of particles and cleaning the surface of the semiconductor substrate It is possible to provide a single wafer spin cleaning apparatus for a semiconductor substrate capable of performing the above.
The single wafer processing is a method of processing the substrates one by one, and the process of shifting from the conventional batch processing to the single wafer processing is increasing as the accuracy of the process processing and the diameter of the wafer are increased.
本発明により、汚染度の高い半導体基板を洗浄する際に、枚葉式スピン洗浄によりパーティクルの発生を抑えながら清浄度を向上させることができ、且つスループットの低下を抑えることができる。 According to the present invention, when cleaning a highly contaminated semiconductor substrate, cleanness can be improved while suppressing generation of particles by single wafer spin cleaning, and a reduction in throughput can be suppressed.
以下に本発明の詳細を説明する。
被洗浄物である半導体基板は、特に限定されないが、好ましくは、シリコン基板や、シリコン、サファイア、石英または窒化アルミニウム（ＡｌＮ）等を支持基板（ベースウェーハ）としその上にシリコン膜を有するＳＯＩ(Silicon on Insulator)基板が例示できる。半導体基板のサイズや種類も、特に限定されず、目的により適宜選択できる。
Details of the present invention will be described below.
The semiconductor substrate that is an object to be cleaned is not particularly limited, but is preferably an SOI (silicon substrate, SOI (silicon wafer) with a silicon substrate on a support substrate (base wafer) such as silicon, sapphire, quartz, or aluminum nitride (AlN). A silicon on insulator) substrate can be exemplified. The size and type of the semiconductor substrate are not particularly limited and can be appropriately selected depending on the purpose.
本発明によれば、好ましくは一定の回転数で回転している半導体基板上に、超音波を印加しながらフッ化水素酸水溶液を流す。その際、別個に純水を半導体基板上に供給し、半導体基板の全面を純水で覆いつつ洗浄を行う。半導体基板の回転数は、特に限定されないが、半導体基板のサイズや種類により半導体基板の表面全体が純水で覆われるように選択する。なお、全面又は表面全体は、フッ化水素酸水溶液が接触している表面以外の表面全体である。 According to the present invention, a hydrofluoric acid aqueous solution is allowed to flow while applying ultrasonic waves onto a semiconductor substrate that is preferably rotated at a constant rotational speed. At that time, pure water is separately supplied onto the semiconductor substrate, and cleaning is performed while covering the entire surface of the semiconductor substrate with pure water. The number of rotations of the semiconductor substrate is not particularly limited, but is selected so that the entire surface of the semiconductor substrate is covered with pure water according to the size and type of the semiconductor substrate. The entire surface or the entire surface is the entire surface other than the surface in contact with the hydrofluoric acid aqueous solution.
フッ化水素酸水溶液の濃度は、目的とする清浄度や半導体基板の種類により適宜選択することができるが、好ましくは０．０５体積(vol)％以上、より好ましくは０．０５〜１体積％である。濃度が０．０５体積％未満では洗浄効果が低下する場合があり、濃度を必要以上に高くしても洗浄効果はほとんど変わらないからである。 The concentration of the hydrofluoric acid aqueous solution can be appropriately selected depending on the target cleanliness and the type of the semiconductor substrate, but is preferably 0.05 vol% or more, more preferably 0.05 to 1 vol%. It is. This is because if the concentration is less than 0.05% by volume, the cleaning effect may be reduced, and even if the concentration is increased more than necessary, the cleaning effect is hardly changed.
半導体基板の表面の超音波の印加は、好ましくは、超音波を印加したフッ化水素酸水溶液を供給することにより行われる。また、超音波を印加したフッ化水素酸水溶液は、好ましくは超音波振動子を有するノズルから供給できる。
一般的に印加する超音波の周波数が高くなれば被洗浄物である半導体基板へのダメージが小さく、また微粒子の除去に適している。そのため印加する超音波の周波数は、好ましくは２００ｋＨｚ以上、より好ましくは２００ｋＨｚ〜１ＭＨｚ、さらに好ましくは５００ｋＨｚ〜１ＭＨｚである。
The application of ultrasonic waves on the surface of the semiconductor substrate is preferably performed by supplying a hydrofluoric acid aqueous solution to which ultrasonic waves are applied. Moreover, the hydrofluoric acid aqueous solution to which ultrasonic waves are applied can be preferably supplied from a nozzle having an ultrasonic vibrator.
In general, if the frequency of the applied ultrasonic wave is high, damage to the semiconductor substrate, which is the object to be cleaned, is small, and it is suitable for removing fine particles. Therefore, the frequency of the applied ultrasonic wave is preferably 200 kHz or more, more preferably 200 kHz to 1 MHz, and further preferably 500 kHz to 1 MHz.
超音波を印加したフッ化水素酸水溶液とは別個に純水を供給するのは、例えばシリコンではフッ化水素酸水溶液により自然酸化膜が除去され撥水性を有する活性表面が露出するが、この露出した活性表面はパーティクル等の汚染物を吸着しやすいからである。露出した活性表面が汚染物を吸着しやすいため、超音波印加により発生するヒュームや塵埃がこの露出した活性表面に付着し汚染の原因となる。従って、別個に、例えば別ノズルから超純水を供給し、基板表面上を超純水で覆われるようにすることで汚染の付着を防ぎ、且つ除去した汚染物を常に半導体基板外側へ押し流すことで汚染物の再付着を防ぎながら洗浄を行うことができる。
純水は、半導体の洗浄を可能とするものであれば良いが、好ましくは、半導体プロセスに通常用いられる超純水である。また、純水は、純水に過酸化水素水やアンモニア水等を加えたものであっても良く、オゾンや水素を加えたオゾン水や水素水であっても良い。特に、１〜１０質量％の過酸化水素水が半導体基板の表面に薄い酸化層を形成し、表面への汚染物付着の抑制の点から好ましい。
The pure water is supplied separately from the hydrofluoric acid aqueous solution to which ultrasonic waves are applied. For example, in silicon, the natural oxide film is removed by the hydrofluoric acid aqueous solution and the active surface having water repellency is exposed. This is because the activated surface easily adsorbs contaminants such as particles. Since the exposed active surface easily adsorbs contaminants, fumes and dust generated by application of ultrasonic waves adhere to the exposed active surface and cause contamination. Therefore, separately, for example, by supplying ultrapure water from another nozzle and covering the surface of the substrate with ultrapure water, the contamination is prevented from adhering, and the removed contaminants are always flushed out of the semiconductor substrate. The cleaning can be performed while preventing the reattachment of contaminants.
The pure water is not particularly limited as long as it allows cleaning of the semiconductor, but is preferably ultrapure water that is usually used in semiconductor processes. The pure water may be pure water obtained by adding hydrogen peroxide water or ammonia water, or may be ozone water or hydrogen water obtained by adding ozone or hydrogen. In particular, 1 to 10% by mass of hydrogen peroxide is preferable from the viewpoint of forming a thin oxide layer on the surface of the semiconductor substrate and suppressing the adhesion of contaminants to the surface.
フッ化水素酸水溶液の流量及び純水の流量は、特に限定されないが、半導体基板のサイズや種類により半導体基板の表面全体が純水で覆われるように選択する。フッ化水素酸水溶液の流量は、好ましくは０．５〜２Ｌ／分であり、純水の流量は、好ましくは０．７〜１Ｌ／分であり、フッ化水素酸水溶液と純水の流量比は、好ましくは２：１から１：１の範囲である。これらの範囲では、表面全体に純水の被覆層ができ、フッ化水素酸水溶液により露出した活性表面への汚染物の付着を防ぐことができる。 The flow rate of the hydrofluoric acid aqueous solution and the flow rate of pure water are not particularly limited, but are selected so that the entire surface of the semiconductor substrate is covered with pure water according to the size and type of the semiconductor substrate. The flow rate of the hydrofluoric acid aqueous solution is preferably 0.5 to 2 L / min, the flow rate of pure water is preferably 0.7 to 1 L / min, and the flow ratio of the hydrofluoric acid aqueous solution and pure water is Is preferably in the range of 2: 1 to 1: 1. In these ranges, a pure water coating layer is formed on the entire surface, and contamination can be prevented from adhering to the active surface exposed by the hydrofluoric acid aqueous solution.
フッ化水素酸水溶液の半導体基板の表面への供給は、好ましくは、フッ化水素酸水溶液を半導体基板の表面の中心部の内側から半導体基板の外周部よりも外側までの範囲で揺動しながら半導体基板の表面に供給するものである。さらに好ましくは、超音波を印加したフッ化水素酸水溶液を、半導体基板の中心部の内側から外周部よりも外側までの範囲で揺動しながら半導体基板の表面に供給する。
ノズルの揺動範囲を半導体基板の中心部の内側まで揺動するのは、中心付近の汚染物の除去が確実に行われるようにするためである。また、外周領域より外側まで揺動させるのはノズルの揺動範囲を最外周までに留めた場合、基板の最外周部から内側に向かう溶液の流れにより一度除去した汚染物を内側に押し流し再付着するのを防ぐためである。
超音波を印加したフッ化水素酸水溶液の揺動は、例えば、フッ化水素酸水溶液を吐出する超音波振動子付ノズルを揺動させて行うことができる。
The supply of the hydrofluoric acid aqueous solution to the surface of the semiconductor substrate is preferably performed while the hydrofluoric acid aqueous solution is swung in a range from the inside of the center of the surface of the semiconductor substrate to the outside of the outer periphery of the semiconductor substrate. It is supplied to the surface of the semiconductor substrate. More preferably, an aqueous hydrofluoric acid solution to which ultrasonic waves are applied is supplied to the surface of the semiconductor substrate while swinging in a range from the inside of the central portion of the semiconductor substrate to the outside of the outer peripheral portion.
The reason why the nozzle swings to the inside of the central portion of the semiconductor substrate is to ensure removal of contaminants near the center. In addition, when the nozzle swing range is kept at the outermost periphery, the contaminants that have been removed once by the flow of the solution from the outermost periphery of the substrate to the inside are swept inward and reattached. This is to prevent this from happening.
The swinging of the hydrofluoric acid aqueous solution to which ultrasonic waves are applied can be performed, for example, by swinging a nozzle with an ultrasonic vibrator that discharges the hydrofluoric acid aqueous solution.
前述したように、半導体基板の回転数、フッ化水素酸水溶液の流量及び超純水の流量は、特に限定されないが、半導体基板のサイズや種類により半導体基板の表面全体が純水で覆われるようそれぞれのパラメーターを適宜選択する必要がある。半導体基板の表面全体に純水の皮膜を形成させてパーティクル付着を防止しながら半導体基板の表面の洗浄を行うためである。
洗浄時間はスループットを考慮し３０秒以上２分以内であることが好ましい。
As described above, the number of revolutions of the semiconductor substrate, the flow rate of the hydrofluoric acid aqueous solution, and the flow rate of the ultrapure water are not particularly limited, but the entire surface of the semiconductor substrate is covered with pure water depending on the size and type of the semiconductor substrate. It is necessary to select each parameter appropriately. This is because the surface of the semiconductor substrate is cleaned while forming a pure water film on the entire surface of the semiconductor substrate to prevent adhesion of particles.
The washing time is preferably 30 seconds or more and 2 minutes or less in consideration of the throughput.
洗浄後は、フッ化水素酸水溶液の供給を停止し、好ましくは純水でリンスを行う。その後、基板の回転数を好ましくは８００〜１５００ｒｐｍまで上げて、基板を乾燥させてもよい。 After washing, the supply of the hydrofluoric acid aqueous solution is stopped, and rinsing is preferably performed with pure water. Thereafter, the number of rotations of the substrate is preferably increased to 800 to 1500 rpm, and the substrate may be dried.
本発明に適用できる好ましい枚葉式スピン洗浄装置を説明する。
枚葉式スピン洗浄装置は、半導体基板を保持して回転させるスピンチャックと、半導体基板の表面に超音波を印加したフッ化水素酸水溶液を供給できる少なくとも１つの超音波振動子付ノズルと、超音波振動子付ノズルを半導体基板の中心部内側から半導体基板の外郭の外側まで揺動できる超音波振動子付ノズルに接続されたアームと、半導体基板の表面に純水を供給できる、超音波振動子付ノズルとは別の少なくとも１つのノズルとを備え、半導体基板の表面の全面に純水の皮膜を形成させてパーティクル付着を防止し半導体基板の表面の洗浄を行うことができるものであればよく、特に限定されず、目的とする半導体基板の種類、サイズ等により適宜選択できる。
超音波振動子は、特に限定されないが、好ましくは２００ｋＨｚ以上、より好ましくは２００ｋＨｚ〜１ＭＨｚ、さらに好ましくは５００ｋＨｚ〜１ＭＨｚの周波数の周波数を印加できるものがよい。一般的に印加する超音波の周波数が高くなれば被洗浄物である半導体基板へのダメージが小さく、また微粒子の除去に適しているからである。
A preferred single wafer spin cleaning apparatus applicable to the present invention will be described.
The single wafer spin cleaning apparatus includes a spin chuck that holds and rotates a semiconductor substrate, at least one nozzle with an ultrasonic vibrator that can supply a hydrofluoric acid aqueous solution to which ultrasonic waves are applied to the surface of the semiconductor substrate, Ultrasonic vibration that can supply pure water to the surface of the semiconductor substrate and the arm connected to the nozzle with ultrasonic transducer that can swing the nozzle with the ultrasonic transducer from the inside of the center of the semiconductor substrate to the outside of the outline of the semiconductor substrate Provided with at least one nozzle different from the nozzle with a child, and can form a pure water film on the entire surface of the semiconductor substrate to prevent particle adhesion and clean the surface of the semiconductor substrate. It is not particularly limited and can be appropriately selected depending on the type and size of the target semiconductor substrate.
The ultrasonic vibrator is not particularly limited, but preferably has a frequency of 200 kHz or more, more preferably 200 kHz to 1 MHz, and even more preferably 500 kHz to 1 MHz. This is because, in general, when the frequency of ultrasonic waves to be applied is increased, damage to a semiconductor substrate, which is an object to be cleaned, is small and suitable for removing fine particles.
本発明を実施例等に基づき説明するが、本発明はこれらに限定されるものではない。
＜サンドブラスト処理により汚染されたシリコン基板の準備＞
６インチシリコン基板を、アルミナ粉末（キイライト研磨材社製ＷＡ♯６００、平均粒径２０μｍ）を砥粒としてサンドブラスト装置（信越エンジニアリング社製）を用いて以下の条件で処理し、故意に汚染させたシリコン基板を得た。
The present invention will be described based on examples, but the present invention is not limited thereto.
<Preparation of silicon substrate contaminated by sandblasting>
A 6-inch silicon substrate was intentionally contaminated by using a sandblasting device (manufactured by Shin-Etsu Engineering Co., Ltd.) with alumina powder (WA # 600 manufactured by Keylite Abrasive Co., Ltd., average particle size 20 μm) as abrasive grains under the following conditions. A silicon substrate was obtained.
＜実施例１＞
サンドブラスト処理されたシリコン基板の回転数を２００ｒｐｍとし、濃度が１体積％のフッ化水素酸水溶液を、基板上を中心部よりも内側から外周部よりも外側まで揺動する１ＭＨｚの振動子を有するノズルから、超音波を印加しながら１Ｌ／ｍｉｎの流量で供給しつつ、別のノズルから超純水を基板上に１Ｌ／ｍｉｎの流量で供給し洗浄を行った。洗浄時間は１分とした。その後フッ化水素酸水溶液の供給を停止し、超純水でリンスを行い基板の回転数を１２００ｒｐｍまで上げ乾燥させ、洗浄されたシリコン基板を得た。
<Example 1>
The silicon blasted silicon substrate has a rotation speed of 200 rpm and a 1 MHz vibrator that swings a hydrofluoric acid aqueous solution having a concentration of 1% by volume from the inner side to the outer side of the outer peripheral part on the substrate. While supplying ultrasonic waves from a nozzle at a flow rate of 1 L / min, cleaning was performed by supplying ultrapure water from another nozzle at a flow rate of 1 L / min. The washing time was 1 minute. Thereafter, the supply of the hydrofluoric acid aqueous solution was stopped, the substrate was rinsed with ultrapure water, the substrate rotation speed was increased to 1200 rpm, and the washed silicon substrate was obtained.
＜比較例１＞
「別のノズルから超純水を基板上に１Ｌ／ｍｉｎの流量で供給」することを行わなかったこと以外は、実施例１と同様にして洗浄されたシリコン基板を得た。
<Comparative Example 1>
A cleaned silicon substrate was obtained in the same manner as in Example 1 except that “supplying ultrapure water from another nozzle to the substrate at a flow rate of 1 L / min” was not performed.
＜比較例２＞
サンドブラスト処理されたシリコン基板上を中心部より外周側、且つ外周部より内側の範囲で揺動した以外は実施１同様にして洗浄されたシリコン基板を得た。
<Comparative example 2>
A cleaned silicon substrate was obtained in the same manner as in Example 1 except that it was swung on the silicon blast-treated silicon substrate in the range from the center to the outer periphery and from the outer periphery.
＜洗浄後のシリコン基板の清浄度の評価＞
実施例１、比較例１及び比較例２についてそれぞれの方法でシリコン基板１０枚の洗浄を実施し、それぞれ洗浄後のシリコン基板の清浄度の確認を行った。
パーティクル汚染については、欠陥検査装置（ＴＬＡ−Ｔｅｎｃｏｒ社製Ｓｕｒｆｓｃａｎ ＳＰ１）を用い、１０回実施した各洗浄後のシリコン基板上で検出された０．１９μｍ以上のパーティクル数の平均値を得た。金属汚染については、ＴＲＸＦ(Total Reflection X-ray Fluorescence：全反射蛍光Ｘ線)分析装置（テクノス社製ＴＲＥＸ６３０Ｔ）を用いて、１０回実施した各洗浄後のシリコン基板上の任意の５点を測定し、１×１０１０ａｔｏｍ／ｃｍ２以上の汚染が検出された点数を計測した。これらの結果を表１に示す。
<Evaluation of cleanliness of silicon substrate after cleaning>
With respect to Example 1, Comparative Example 1 and Comparative Example 2, 10 silicon substrates were cleaned by the respective methods, and the cleanliness of the cleaned silicon substrate was confirmed.
For particle contamination, a defect inspection apparatus (Surfscan SP1 manufactured by TLA-Tencor) was used to obtain an average value of the number of particles of 0.19 μm or more detected on the silicon substrate after 10 cleanings. For metal contamination, a TRXF (Total Reflection X-ray Fluorescence) analyzer (TREX630T manufactured by Technos) was used to measure any five points on the silicon substrate after each cleaning performed 10 times. Then, the number of points at which contamination of 1 × 10 10 atoms / cm 2 or more was detected was measured. These results are shown in Table 1.
表１に示すように、比較例１と比較例２で鉄分が検出され、パーティクル汚染は顕著であった。比較例１と比較例２の結果から、鉄分の除去には揺動範囲の影響が大きく、バーティクル汚染の除去には別のノズルからの純水供給の影響が大きいことが分かる。実施例１では、鉄分が検出されず、パーティクル汚染の発生を抑えながら、汚染を除去できる良好な洗浄結果が得られた。超音波振動子を有するノズルの揺動範囲と別のノズルからの超純水供給が、金属汚染やパーティクル汚染の低減に重要なことが分かる。 As shown in Table 1, iron was detected in Comparative Example 1 and Comparative Example 2, and particle contamination was significant. From the results of Comparative Example 1 and Comparative Example 2, it can be seen that the influence of the swing range is large for removing iron, and the influence of pure water supply from another nozzle is large for removing verticle contamination. In Example 1, iron was not detected, and a good cleaning result was obtained that could remove contamination while suppressing the occurrence of particle contamination. It can be seen that the oscillation range of the nozzle having the ultrasonic vibrator and the supply of ultrapure water from another nozzle are important for reducing metal contamination and particle contamination.
Claims (6)
上記半導体基板の表面に超音波を印加したフッ化水素酸水溶液を供給できる少なくとも１つの超音波振動子付ノズルと、
上記超音波振動子付ノズルを上記半導体基板の中心部内側から上記半導体基板の外郭の外側まで揺動できる上記超音波振動子付ノズルに接続されたアームと、
上記半導体基板の表面に純水を供給できる、上記超音波振動子付ノズルとは別の少なくとも１つのノズルとを備え、
上記半導体基板の表面の全面に上記純水の皮膜を形成させてパーティクル付着を防止し上記半導体基板の表面の洗浄を行うことができる半導体基板の枚葉式スピン洗浄装置。 A spin chuck for holding and rotating a semiconductor substrate;
At least one nozzle with an ultrasonic transducer capable of supplying a hydrofluoric acid aqueous solution to which ultrasonic waves are applied to the surface of the semiconductor substrate;
An arm connected to the nozzle with an ultrasonic transducer capable of swinging the nozzle with the ultrasonic transducer from the inside of the central portion of the semiconductor substrate to the outside of the outline of the semiconductor substrate;
Including at least one nozzle different from the nozzle with an ultrasonic vibrator, capable of supplying pure water to the surface of the semiconductor substrate;
A single wafer spin cleaning apparatus for a semiconductor substrate, wherein the pure water film is formed on the entire surface of the semiconductor substrate to prevent adhesion of particles and to clean the surface of the semiconductor substrate.
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| CN109585262A (en) * | 2017-09-28 | 2019-04-05 | 台湾积体电路制造股份有限公司 | The method of clean semiconductor substrate |
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| JP2001053051A (en) * | 1999-08-10 | 2001-02-23 | Pre-Tech Co Ltd | Device and method for drying and washing substrate |
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