JP2010177612A - Semiconductor integrated circuit device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a band gap reference voltage generation circuit which has a small temperature characteristic and high accuracy. <P>SOLUTION: An output voltage of a band gap reference voltage generation circuit 21 is adjusted by preparing a variable resistor in a band gap reference voltage generation circuit 21 and changing the resistance value of the variable resistor. The value of the output voltage to be adjusted of the band gap reference voltage generation circuit 21 is set at a value as small as possible in a temperature characteristic. The resistance value of the variable resistor can be varied by making on/off the switch of transistors etc. connected to a plurality of prepared resistors to make each resistor effective or ineffective. The fixing of the resistance value of the variable resistor to make the output voltage of the band gap reference voltage generation circuit 21 at the most suitable value is carried out using a trimming element of a fuse etc. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a trimming technique for reducing the temperature characteristic of a bandgap reference voltage and realizing a highly accurate bandgap reference voltage, and in particular, increases the current flowing through a solenoid for controlling the hydraulic pressure of an automobile transmission. The present invention relates to a technique that is effective in generating a reference voltage that is a reference for a current value in a circuit that detects the accuracy and controls the current value with high accuracy.

  In recent years, as the demand for higher functionality, higher reliability, lower fuel consumption, and lower price for automobiles has increased, equipment for controlling automobiles such as engine control, transmission control, airbag control, power steering, brake control, etc. In various applications such as door locks, computerization has progressed, and today almost all systems used in automobiles are controlled by electronic devices.

  Electronic transmissions are also advancing and gear shifting is performed quickly and smoothly to improve drive feeling as well as improve fuel economy and reduce pollutants. Today, transmission continuously variable transmissions (CVT) are also being developed.

  On the other hand, electronic devices used in automobiles are required to operate in harsh environments, and examples of temperature ranges in which electronic devices are used include devices used in engine rooms, for example, from 40 ° C. below freezing point. It is required to operate normally in a wide range of 125 ° C.

  Electronic circuits for controlling electronic devices such as transmission control include a constant current circuit, an input interface circuit, a stabilized power circuit, various control circuits, and the like, and a reference voltage is used for these circuits. These circuits are required to operate normally over a wide temperature range.

  Furthermore, as the development and sales competition of electronic parts for automobiles intensifies, it is required to minimize the cost for realizing these technologies.

  In transmission control for automobiles, conventionally, in order to improve the speed change characteristics, the hydraulic pressure is sometimes feedback-controlled to an optimum value by a solenoid driver. At this time, in order to perform feedback control optimally, quick response is required.

  However, in the feedback control, if the responsiveness is increased, the solenoid is likely to vibrate. In particular, if the current flowing through the solenoid deviates from the optimum value due to variations and temperature characteristics, vibrations are more likely to occur. In order to suppress this vibration, it was necessary to control the current flowing through the solenoid driver with high accuracy.

  For example, as described in Patent Document 1, as a method for controlling current with high accuracy in transmission control, the current flowing through the solenoid driver fluctuates when the solenoid vibrates. Control is performed so that the detected current is added to or subtracted from the current flowing through the solenoid by the amount of the changed current (see Patent Document 1).

  Patent Document 2 also describes a method for performing current control by detecting a current flowing through a solenoid driver (see Patent Document 2).

JP-A-7-103324 Japanese Patent Laid-Open No. 6-81938

  However, no matter which method is used to control the current flowing through the solenoid, if there is an error in the control current due to variations in the current control circuit or temperature characteristics, there is a concern that vibration may occur if the responsiveness is increased. The

  Therefore, it is necessary to perform current control with high accuracy. To that end, it is necessary to perform current detection with high accuracy because of low temperature characteristics. In order to perform current detection with high accuracy, it is necessary to make the temperature characteristics of the reference voltage, which serves as a reference for the detection current value, as small as possible to achieve high accuracy.

  As a reference voltage having a low temperature characteristic, there is a band gap reference voltage generation circuit. Normally, the constants of the elements inside the bandgap reference voltage generation circuit are set to values that minimize the temperature characteristics of the output voltage, but due to variations, the constants deviate from values that minimize the temperature characteristics. There is a case. Therefore, as it is, if an attempt is made to ship a product having a high-accuracy output voltage reference voltage with small temperature characteristics, the cost will increase significantly due to the low yield.

  In order not to reduce the yield, when the output voltage value of the output voltage of the bandgap reference voltage generation circuit deviates from the optimum output voltage value that minimizes, the optimum output voltage that minimizes the temperature characteristic It will be necessary to adjust it to a value.

  For example, as a document relating to a technique for obtaining a high-accuracy bandgap reference voltage with small temperature characteristics, there are, for example, Japanese Patent Laid-Open Nos. 6-138960 and 2002-305244.

  Japanese Patent Laid-Open No. 6-138960 describes a technique for trimming an internal resistance in order to adjust a bandgap reference voltage. In this document, the resistor for adjusting the bandgap reference voltage is divided into a plurality of resistors, each of which is short-circuited by a transistor or not, so that the resistance value can be varied, and the bandgap reference voltage value can be changed. It is adjusted.

  Here, whether each transistor is on or off is fixed by inputting information on the on / off state of each transistor to the memory circuit, reading the state of the memory circuit with a decoder, and turning each transistor on or off. This is done by applying a corresponding voltage to the gate.

  Further, in order to fix the transistor on or off, a method of storing data using a semiconductor memory circuit is used. However, in ordinary semiconductor memory circuits such as DRAM (Dynamic Random Access Memory), SRAM (Static Random Access Memory), and flash memory, the data changes due to high-temperature leaks and external noises under the harsh environment of the automobile. It is considered that the reliability of the system cannot be satisfied.

  Similarly, Japanese Patent Laid-Open No. 2002-305244 also adjusts a resistance value by short-circuiting both ends of a plurality of resistors among a plurality of band gap reference voltage adjusting resistors using a transistor, Techniques for making adjustments are described. In this patent document, a pull-up current is connected between the gate of each transistor and the power supply, and a fuse is connected between the gate and GND.

  When the fuse is cut with a laser or the like, the gate of the transistor is fixed to H by a pull-up current, the transistor is turned on, and when the fuse is not cut, the gate of each transistor is connected to GND. That is, each transistor is fixed on or off depending on whether the fuse is cut or not.

  An N-channel MOS (Metal Oxide Semiconductor) transistor is used as the switch, a pull-up current is connected to the gate of the N-channel MOS transistor, and the ground (GND) voltage is fixed by a fuse.

  Therefore, when the fuse is cut, the gate is pulled up and the N-channel MOS transistor is turned on, the resistance connected between the source and drain of the N-channel MOS transistor is invalidated, and the N-channel MOS is not cut when the fuse is not cut. The transistor remains off and the resistance connected between the source and drain of the N-channel MOS transistor is activated.

  However, with this method, the resistance value can be adjusted only in the direction from a large value to a small value. Therefore, the resistance value is set to a large value at first, and the resistance value is shifted in the small direction during trimming. We have to go.

  Therefore, a method is required in which the output voltage of the band gap reference voltage generation circuit is initially shifted from the optimum value and adjusted to the optimum value while changing the on / off combination of each N-channel MOS transistor. Become.

  For this reason, it has been clarified that the time required for trimming for adjusting the output voltage of the bandgap reference voltage generation circuit becomes longer and the cost increases. In addition, since the output voltage of the bandgap reference voltage generation circuit needs to be shifted from the optimum value from the beginning, there is a concern that the accuracy of adjustment becomes poor.

  In addition, when using a trimming technique in which a fuse is cut with a laser, the physical composition of the diffusion layer in the vicinity of the fuse changes, affecting the blocks around the trimming circuit and affecting circuit characteristics and the like. Concerned.

  As shown in FIGS. 19 and 20, in order to irradiate the laser beam 101 to the fuse 102 of the trimming circuit 24, the second oxide film 105 has a hole, and the fuse 102 is directly irradiated with the laser beam 101. It is like that.

  Further, in order to surely cut the fuse 102, it is necessary to set the laser beam 101 to be stronger. In that case, it is conceivable that the laser beam 101 penetrates the first oxide film 104 of the semiconductor integrated circuit chip and reaches the diffusion layer 103.

  In this case, when the physical property changing portion 109 is generated and reaches the separation layer 107 and the adjacent block 108, the surrounding blocks are affected. Although the fuse 102 is formed in the same process as the wiring 106 here, it is needless to say that the fuse 102 can be generated in another wiring process or a polysilicon process.

  In recent years, despite the strict requirements regarding the reliability and functions of automobiles, the price required for automobile semiconductors has become increasingly lower. Therefore, it is necessary to realize a bandgap reference voltage generation circuit with high output voltage accuracy by minimizing the increase in chip area generated for high accuracy while maintaining high reliability.

  As described above, an object of the present invention is to provide a highly accurate control current that minimizes costs, withstands severe environments such as automobiles, maintains high reliability, and the like.

  It is another object of the present invention to provide a semiconductor integrated circuit device capable of obtaining a reference voltage with a high output voltage accuracy and a very low temperature characteristic.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

  The present invention uses a bandgap reference voltage generation circuit with a trimming function capable of adjusting an output voltage at the time of a shipping test as a reference voltage for performing current control of a solenoid for controlling hydraulic pressure of a transmission control for an automobile. .

  As a trimming means, a variable resistor for correcting temperature characteristics is provided in the band gap reference voltage generation circuit.

  In the band gap reference voltage generation circuit, the size and resistance value of the transistors in the circuit are set to optimum values in order to minimize temperature characteristics. The output voltage at this time is within a certain range if the temperature characteristic is minimized. However, when the output voltage of the bandgap reference voltage generation circuit deviates from the above-mentioned fixed range due to variations or the like, not only the temperature characteristics are deteriorated, but also the output voltage deviates from the set value.

  Therefore, by adjusting the temperature characteristic as much as possible by providing an adjustment resistor for adjusting the temperature characteristic in the circuit, the output voltage can be kept within a certain range. In other words, if the adjustment is made so that the output voltage is kept within a certain range, the temperature characteristics can be made as small as possible.

  As a method for correcting the temperature characteristics of the band gap reference voltage generation circuit, there are a method of adjusting the size of the transistor involved in the temperature characteristics and a method of adjusting the resistance value involved in the temperature characteristics. In order to minimize the chip area due to the addition of a circuit for adjustment, it is advantageous to adjust the resistance value.

  That is, by adjusting the resistance value related to the temperature characteristic in the band gap reference voltage generation circuit using the temperature characteristic correction resistor, the voltage of the output of the band gap reference voltage generation circuit is also within a certain range. .

  Then, by changing the resistance value of the temperature characteristic correcting variable resistor, the output voltage of the band gap reference voltage generating circuit is changed, and the resistance of the temperature characteristic correcting variable resistor when the temperature characteristic of the output voltage is minimized. If the value is determined, the resistance value is fixed to that value.

  The temperature characteristic correcting variable resistor is composed of a plurality of resistors. Each resistor is connected to a switch, and can be validated or invalidated by turning on or off each switch. Then, the resistance value is varied by changing the combination of resistors to be activated.

  Each switch of the temperature characteristic correcting variable resistor is controlled to be turned on or off by a control logic. That is, the signal from the control logic can be turned on or off by a high level or low level signal. Accordingly, the resistance value of the variable resistor for temperature characteristic correction can be fixed by fixing the signal line connected from the control logic to each switch at a high level or a low level.

  In order to fix the signal line connected to each switch from the control logic to a high level or a low level, trimming by a fuse is performed. That is, the line is pulled up with a resistor through a fuse, and pulled down with a resistor through another fuse. This line can be fixed to pull-down or pull-up by cutting any fuse. For example, it is possible to turn on a switch connected to this line if it is pulled up and to turn it off if it is pulled down.

  Furthermore, in order to prevent the signal line connected to each switch from the control logic after trimming from being affected by the control logic, a fuse is provided on the line connected to each switch from the control logic, and this fuse is also used during trimming. Cut it off.

  The output voltage of the band gap reference voltage generation circuit is monitored while the resistance value of the variable resistor for temperature characteristic correction is changed by the control logic, and when the output voltage is such that the temperature characteristic is minimized. The control logic state is stored, and this state is copied to a trimming device described later. The trimming device cuts the fuse in accordance with the control logic state information.

  In addition, in order to confirm whether or not the fuse is blown reliably, the power supply current is measured before and after the fuse is blown. Since each trimming circuit is pulled up or pulled down by a resistor via a fuse, if either the pull-up side or the pull-down side fuse is cut, no current flows from the power source to the ground (GND) via the resistor. . Therefore, if the current decreases by this amount, it can be confirmed that the fuse has been blown.

  Here, a laser or the like is used to cut the fuse. However, since there may be a problem such as a change in the characteristics of elements around the fuse due to the laser or the like, the bandgap reference voltage generation circuit and other characteristics of the layout are considered. A circuit sensitive to change is arranged at a distance away from a trimming element such as a fuse. It is also possible to arrange a fuse at the end of the chip, or to arrange a resistor, a logic circuit, or the like that does not affect the characteristics of the integrated circuit even if it is affected by trimming such as a laser around the fuse.

  As the above switch, an NMOS transistor, an NPN transistor, a PMOS transistor, a PNP transistor, a transmission gate, a switch that can be constituted by other elements, or the like is used.

  Among the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

  (1) The output voltage of the bandgap reference voltage generation circuit can be adjusted with high accuracy, and a high-accuracy output voltage with small temperature characteristics can be obtained.

  (2) The trimming circuit uses resistors and fuses, and the trimming output level after trimming is fixed by cutting the fuses, and the fuse current is measured by measuring the power supply current before and after the fuses are cut. Since it can be confirmed that the fuse has been blown, the fuse can be blown reliably, and there is no change in data due to high-temperature leakage or external noise. Can be minimized.

  (3) Furthermore, since the element to be adjusted in the band gap reference voltage generation circuit for adjusting the output voltage is a resistor, an increase in the chip area due to the addition of the adjustment element can be minimized.

  (4) Further, by arranging the trimming circuit at a position away from the bandgap reference voltage generation circuit on the semiconductor integrated circuit chip layout, it is possible to reduce the influence of physical property changes around the trimming element due to a laser or the like during trimming. It becomes possible.

  (5) According to the above (1) to (4), for example, a current detection system required in a current detection circuit such as an automobile transmission solenoid driver can be satisfied, and high reliability that can withstand the use environment of the automobile It is possible to realize a product that requires a minimum cost.

It is a circuit diagram which shows an example of the transmission control system for motor vehicles by Embodiment 1 of this invention. It is a circuit diagram which shows an example which applied the band gap reference voltage generation circuit with a trimming function to an example of the transmission control system for motor vehicles by Embodiment 1 of this invention. 5 is a flowchart when trimming is performed in the bandgap reference voltage generation circuit according to the first embodiment of the present invention. It is a circuit diagram which shows an example of the trimming circuit which applied the band gap reference voltage generation circuit with a trimming function to an example of the transmission control system for motor vehicles by Embodiment 1 of this invention. FIG. 3 is a circuit diagram showing an example of a bandgap reference voltage generation circuit according to the first embodiment of the present invention. 5 is a circuit diagram showing an example of a temperature characteristic correcting resistor in the band gap reference voltage generating circuit with a trimming function according to the first embodiment of the present invention. FIG. 5 is a circuit diagram showing an example of a temperature characteristic correcting resistor in the band gap reference voltage generating circuit with a trimming function according to the first embodiment of the present invention. FIG. 5 is a circuit diagram showing an example of a temperature characteristic correcting resistor in the band gap reference voltage generating circuit with a trimming function according to the first embodiment of the present invention. FIG. The temperature characteristic of the output voltage of the bandgap reference voltage generation circuit showing an example of the temperature characteristic of the bandgap reference voltage generation circuit when the value of the variable resistor for temperature characteristic correction in the bandgap reference voltage generation circuit in the present invention is changed It is a graph which shows. FIG. 10 is a circuit diagram showing an example of the configuration of a band gap reference voltage generating circuit with a trimming function according to a second embodiment of the present invention. FIG. 10 is a circuit diagram showing an example of the configuration of a band gap reference voltage generating circuit with a trimming function according to a second embodiment of the present invention. FIG. 6 is a circuit diagram showing an example of a temperature characteristic correcting resistor in a band gap reference voltage generating circuit with a trimming function according to a second embodiment of the present invention. FIG. 6 is a circuit diagram showing an example of a temperature characteristic correcting resistor in a band gap reference voltage generating circuit with a trimming function according to a second embodiment of the present invention. FIG. 6 is a circuit diagram showing an example of a temperature characteristic correcting resistor in a band gap reference voltage generating circuit with a trimming function according to a second embodiment of the present invention. It is a circuit diagram which shows an example of the trimming circuit which applied the band gap reference voltage generation circuit with a trimming function to an example of the transmission control system for motor vehicles by Embodiment 3 of this invention. FIG. 10 is a circuit diagram showing an example of arrangement of a trimming circuit and a bandgap reference voltage generation circuit on a chip layout in a bandgap reference voltage generation circuit with a trimming function according to a fourth embodiment of the present invention. In the band gap reference voltage generating circuit with a trimming function according to the fifth embodiment of the present invention, it is a circuit diagram showing an example of the arrangement of the trimming circuit and the band gap reference voltage generating circuit on the chip layout. In the band gap reference voltage generating circuit with a trimming function according to the sixth embodiment of the present invention, it is an explanatory diagram showing an example of the arrangement of power supply and ground (GND) on chip layout and assembly. It is the figure of the vertical structure which shows an example of the semiconductor chip explaining the influence which acts on an adjacent block when the trimming by the laser which this inventor examined was implemented. It is a figure of the vertical structure which shows the other example of the semiconductor chip explaining the influence which acts on an adjacent block when the trimming by the laser which this inventor examined was implemented.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In all the drawings for explaining the embodiments, the same members are denoted by the same reference symbols in principle, and the repeated explanation thereof is omitted. Further, in the following embodiments, when necessary for the sake of convenience, the description will be divided into a plurality of sections or embodiments, but they are not irrelevant to each other unless otherwise specified. Is related to some or all of the other modifications, details, supplementary explanations, and the like.

  Further, in the following embodiments, when referring to the number of elements (including the number, numerical value, quantity, range, etc.), especially when clearly indicated and when clearly limited to a specific number in principle, etc. Except, it is not limited to the specific number, and may be more or less than the specific number. Further, in the following embodiments, the constituent elements (including element steps and the like) are not necessarily indispensable unless otherwise specified and apparently essential in principle. Needless to say. Similarly, in the following embodiments, when referring to the shapes, positional relationships, etc. of the components, etc., the shapes are substantially the same unless otherwise specified, or otherwise apparent in principle. And the like are included. The same applies to the above numerical values and ranges.

(Embodiment 1)
FIG. 1 is a circuit diagram showing an example of an automobile transmission control system according to Embodiment 1 of the present invention, and FIG. 2 shows a bandgap reference with a trimming function as an example of an automobile transmission control system according to Embodiment 1 of the present invention. FIG. 3 is a circuit diagram showing an example to which the voltage generation circuit is applied, FIG. 3 is a flowchart for performing trimming in the bandgap reference voltage generation circuit according to the first embodiment of the present invention, and FIG. 4 is the first embodiment of the present invention. FIG. 5 is a circuit diagram showing an example of a trimming circuit to which a bandgap reference voltage generation circuit with a trimming function of an automobile transmission control system is applied, and FIG. 5 shows an example of a bandgap reference voltage generation circuit according to Embodiment 1 of the present invention. FIG. 6 is a circuit diagram according to the first embodiment of the present invention. FIG. 7 is a circuit diagram showing an example of a temperature characteristic correcting resistor in a band gap reference voltage generating circuit with a rimming function. FIG. 7 is a diagram for correcting temperature characteristics in the band gap reference voltage generating circuit with a trimming function according to the first embodiment of the present invention. FIG. 8 is a circuit diagram showing an example of a temperature characteristic correction resistor in the bandgap reference voltage generation circuit with a trimming function according to Embodiment 1 of the present invention. FIG. A graph showing the temperature characteristic of the output voltage of the bandgap reference voltage generation circuit showing an example of the temperature characteristic of the bandgap reference voltage generation circuit when the value of the variable resistor for temperature characteristic correction in the bandgap reference voltage generation circuit is changed It is.

  In the first embodiment, FIG. 1 is an example of a continuously variable transmission (CVT) system, for example. A circuit for controlling the current flowing through the solenoid coil 16 for controlling the hydraulic pressure for controlling the clutch of the continuously variable transmission (CVT) is formed in the semiconductor integrated circuit 1.

  The pre-driver unit 2 is not particularly limited, but includes 8 channels (CH0 to CH7), and each includes a control circuit 3, an AD converter 4, a pre-driver 5, and a current detection amplifier 6.

  The hydraulic pressure is controlled by an iron core 15 that is driven by a magnetic field of the solenoid coil 16 by passing a current through the solenoid coil 16. The current flowing through the solenoid coil 16 is performed according to the following procedure.

  In one example of this system, the temperature sensor 9 measures the temperature of the cooling oil of the clutch, for example. For example, the pressure sensor 10 detects the pressure of the clutch. The first hall sensor 11 detects, for example, the rotational speed of the clutch or the rotational speed of the engine.

  For example, the second hall sensor 12 detects a gear shift position. Information from these sensors is transmitted to the MCU 18 through the sensor interface unit 17, and a current value (drive current) flowing through the solenoid coil 16 for optimal hydraulic control based on information detected by each sensor in the MUC 18. Information is transmitted to the control circuit 3 via the communication interface 8.

  For example, the drive current information is converted into a PWM duty ratio, the solenoid driver 13 is PWM-driven via the pre-driver 5, and an optimum current value for controlling the CVT is passed through the solenoid coil 16.

  Here, when the value of the current flowing through the solenoid driver 13 is out of the allowable range, there is a problem that the solenoid vibrates. Although this sound does not affect the drive feeling so much, there is a problem that a user feels uncomfortable about the generated sound.

  Therefore, it is necessary to control the current flowing through the solenoid driver 13 with extremely high accuracy. For this purpose, the current value flowing through the solenoid driver 13 is measured, and the measured current value is fed back to a signal for driving the solenoid driver 13. .

  In an example of this system, a resistor 14 for current measurement is provided between the solenoid driver 13 and the solenoid coil 16, the voltage at both ends of the resistor 14 is measured, amplified by an amplifier, and converted into a digital signal by the AD converter 4. And feed back to the control circuit 3.

  Since the AD converter 4 converts an analog voltage value into a digital signal based on the reference voltage 7, the accuracy of the reference voltage 7 affects the accuracy of the measured current value.

  FIG. 2 shows an embodiment for obtaining a highly accurate reference voltage in the transmission control device in order to detect the current value with high accuracy in order to control the current flowing through the solenoid driver 13 with high accuracy.

  In order to measure the current value with high accuracy, the reference voltage obtained from the band gap reference voltage generation circuit 21 having a small temperature characteristic is used as the reference voltage of the AD converter 4.

  In order to further improve the temperature characteristics and voltage accuracy of the bandgap reference voltage generation circuit 21 on the semiconductor integrated circuit chip, the resistance and the size and shape of the transistors that determine the temperature characteristics of the bandgap reference generation circuit 21. Devise circuit and layout such as placement.

  Regarding the size, for example, by increasing the size of the resistor and the transistor used for the band gap as much as possible, the influence of the mask shift during the wafer process can be reduced and the variation can be reduced.

  As for the shape, the accuracy of the size ratio of the transistors can be improved by making the shape of the layout of each transistor round.

  As for the arrangement of the elements in the band gap reference voltage generation circuit, the resistors that require specific accuracy, and the transistors are arranged adjacent to each other with the same resistance, shape, size, and arrangement direction. . That is, so-called resistor pairing and transistor pairing are optimized.

  As the arrangement of the band gap reference voltage generation circuit block, a technique of reducing the influence of the stress of the mold resin by arranging the block of the band gap reference voltage generation circuit as close to the center of the chip as possible may be used. .

  In addition, in the wiring on the power supply and ground (GND) chip of the band gap reference voltage generation circuit, the so-called power supply and ground (GND) that makes the impedance of the power supply wiring and the impedance of the ground (GND) wiring as close as possible. By performing line impedance matching, a layout arrangement that reduces the influence on external noise is also performed.

  Furthermore, a method of performing the following adjustment at the design stage may be used.

  For example, a plurality of adjustment resistors are arranged in the bandgap reference voltage generation circuit 21 and several patterns of optimum combinations of resistors that minimize the temperature characteristic of the voltage of the bandgap reference voltage generation circuit 21 are created. This is a method of selecting an optimal combination.

  This method uses the center value of the distribution when the center value of the output voltage distribution of the bandgap reference voltage generation circuit deviates from a value that makes the temperature characteristic as small as possible in many samples due to the layout arrangement. This is effective when adjusting to a value that makes the temperature characteristic as small as possible.

  Further, in the present invention, the following is carried out in order to obtain the output voltage of the bandgap reference voltage generation circuit 21 with a smaller temperature characteristic and higher accuracy.

  The band gap reference voltage generation circuit 21 is connected between a power source 34 serving as a third power source and a ground (GND) 35 serving as a fourth power source, and includes a band gap circuit 22 and a temperature characteristic correcting variable resistor 23. Have. The output voltage of the bandgap reference voltage generation circuit 21 becomes the reference voltage of the AD converter 4, and a test pad 26 is connected to this output, and the voltage can be monitored by contacting the probe during the wafer test. It becomes possible.

  The resistance value of the temperature characteristic correcting variable resistor 23 can be varied by a signal from the control logic circuit 25 via the trimming circuit 24. In the drawing, the number of signal lines connected from the control logic circuit 25 to the temperature characteristic correcting variable resistor 23 via the trimming circuit 24 is three, but the number of signal lines is not particularly limited to three. The characteristic correction variable resistor 23 can be arbitrarily set according to the number of steps of the variable resistance value.

  FIG. 3 is a flowchart of trimming according to an embodiment of the present invention.

  First, the probe is brought into contact with the test pad 26 during the wafer test, and the output voltage of the band gap reference voltage generation circuit 21 is measured (step S101).

  Next, the control logic circuit 25 is operated by a signal from the external tester 19, and a signal is transmitted to the temperature characteristic correcting variable resistor 23 via the trimming circuit 24. The signal is, for example, a logic signal of an H level or L level signal, and the resistance value of the temperature characteristic correcting variable resistor 23 is varied by this combination (step S102). Further, the output voltage of the band gap reference voltage generation circuit 21 is continuously monitored by the test pad 26 while the resistance value of the temperature characteristic correcting variable resistor 23 is varied.

  When the temperature characteristic of the output voltage of the bandgap reference voltage generation circuit 21 reaches an optimum value, the external tester 19 changes from the control logic circuit 25 to the temperature characteristic correction variable resistor 23 via the trimming circuit 24. The state of the connected signal line is stored (step S103).

  Thereafter, the state of the signal line connected to the temperature characteristic correcting variable resistor 23 from the control logic circuit 25 stored in the external tester 19 through the trimming circuit 24 is transferred to the trimming device (step S104), and the control logic The fuse in the trimming circuit 24 is cut so as to be equivalent to the state of the signal line connected to the temperature characteristic correcting variable resistor 23 from the circuit 24 via the trimming circuit 24, and the potential of the output of the trimming circuit 24 is set. It is fixed (step S105).

  The above trimming is performed by cutting the fuse by laser trimming during a test in a wafer state.

  When trimming is performed at the time of testing in a packaged state after assembly, a terminal for trimming is separately provided and a technique such as zener zapping is used.

  Further, after performing the above test not only at normal temperature but also at a plurality of temperatures such as high temperature, normal temperature, and low temperature, by trimming the value of the temperature characteristic correcting resistor 23, the output voltage of the bandgap circuit 22 is Furthermore, trimming can be performed with high accuracy.

  FIG. 4 is a circuit diagram showing an example of a specific configuration of the trimming circuit 24. In this embodiment, the first fuse is connected to the signal line between the control logic circuit 25 and the temperature characteristic correcting variable resistor 23. Are connected to the trimming circuit power supply terminal 28 to which the first power is supplied, and the fuse H2 as the second fuse and the second resistor H1 are connected through the fuse H1 as the first resistor and the resistor R1 as the first resistor. The resistor is connected to a ground (GND) 29 to which a second power is supplied via a resistor R2 serving as a resistor.

  Further, a signal line from the control logic circuit 25 is connected via a fuse H3. When trimming is performed, by cutting the fuse H1 connected to the trimming circuit power supply terminal 28 side, the signal line to the temperature characteristic correcting variable resistor 23 is fixed to the ground (GND) 29, and ground (GND). By cutting the fuse H2 connected to the 29th side, the signal line to the temperature characteristic correcting variable resistor 23 is fixed at the voltage of the trimming circuit power supply terminal 28.

  Also, by cutting the fuse H3 on the control logic circuit 25 side, after the trimming, it is not affected by the control logic circuit 25, and completely H (trimming circuit power supply terminal 28 voltage) or L (ground 29 voltage). ) Can be fixed.

  In the drawing, three sets of fuses and resistors in the trimming circuit are described. However, they are not particularly limited to three sets, and are in accordance with the number of steps of the variable resistance value of the variable resistor 23 for temperature characteristic correction. It can be set arbitrarily.

  FIG. 5 is a circuit diagram showing an example of the configuration of the internal circuit of the bandgap circuit 22 according to the first embodiment of the present invention. According to this circuit, the temperature characteristic correcting variable resistor 23 is connected between the band gap circuit 22 and the ground (GND), and the resistance value of the temperature characteristic correcting variable resistor 23 is varied, so that the band gap circuit 22 The output voltage can be varied.

In this circuit, the output voltage VBGO of the band gap reference voltage generation circuit 21 is
VBGO = (R4 + 2RV) / R5). (KT / q) .ln (n.R4 / R3) + VBE1
It becomes.

  Here, RV is the resistance value of the temperature characteristic correcting variable resistor 23, VBE1 is the forward voltage between the base and emitter of the transistor Q1, k is the Boltzmann constant, T is the absolute temperature, n is the size of the transistor Q2, and the size of the transistor Q3. The value divided by, q is the charge of the electrons. By optimizing each resistance value and transistor size, the temperature characteristics of the output voltage of the bandgap reference voltage generation circuit 21 can be minimized.

  FIG. 6 is a circuit diagram showing an example of the configuration of the internal circuit of the temperature characteristic correcting variable resistor 23 according to the first embodiment of the present invention. According to this circuit, a plurality of resistors R6 to R8 are connected in parallel, and the switches SW1 to SW3 are connected to each of the resistors R6 to R8, and the resistors for which the connected switches are on are activated. And the resistance that the connected switch is off is disabled.

  Therefore, the resistance value can be varied by changing the combination of switches to be turned on. In this drawing, three sets of resistors and switches are described, but they are not particularly limited to three sets, and are arbitrarily set according to the number of steps of variable resistance value of the variable resistor 23 for temperature characteristic correction. be able to.

  FIG. 7 is a circuit diagram showing another example of the configuration of the internal circuit of the temperature characteristic correcting variable resistor 23 according to the first embodiment of the present invention. According to this circuit, a plurality of resistors R6 to R8, R12 to R14 are connected in parallel, a plurality of resistor groups connected in parallel are connected in series, and each of the resistors R6 to R8 and R12 to R14 includes: The switches SW1 to SW6 are connected, the resistance for which the connected switch is on is validated, and the resistance for which the connected switch is off is invalidated.

  Therefore, the resistance value can be varied by changing the combination of switches to be turned on. In the drawing, three sets of resistors and switches in the resistor group in which resistors are connected in parallel are described, but the three sets are not particularly limited.

  In addition, although two sets of the plurality of resistance groups are described, the two groups are not particularly limited. The number of these resistors and the number of resistor groups can be arbitrarily set according to the number of steps of the resistance value to be varied of the temperature characteristic correcting variable resistor 23.

  FIG. 8 is a circuit diagram showing still another example of the configuration of the internal circuit of the temperature characteristic correcting variable resistor 23 according to the first embodiment of the present invention. According to this circuit, a plurality of resistors R21 to R23 are connected in parallel, and the switches SW13 to SW15 are connected to the resistors R21 to R23, and the resistors for which the connected switches are turned on are invalidated and connected. The resistor that is turned off is enabled.

  Therefore, the resistance value can be varied by changing the combination of switches to be turned off. In this drawing, three sets of resistors and switches are described, but they are not particularly limited to three sets, and are arbitrarily set according to the number of steps of variable resistance value of the variable resistor 23 for temperature characteristic correction. be able to.

  Here, a semiconductor element such as an NMOS transistor, a PMOS transistor, an NPN transistor, a PNP transistor, or a transmission gate can be used as the switch. However, when an NMOS transistor is used, in order to reduce the element area of the switch. Is valid.

  Further, as a means for confirming that the fuse has been blown, there is a method of measuring a power supply current. In FIG. 4, a signal line from the control logic circuit 25 to the temperature characteristic correcting variable resistor 23 is connected to the trimming circuit power supply terminal 28 via a resistor and a fuse in the trimming circuit. It is connected to the ground (GND) 29 through a fuse.

  That is, two resistors and two fuses are connected in series between the trimming circuit power supply terminal 28 and the ground (GND) 29. When trimming is performed, either the fuse on the trimming circuit power supply terminal 28 side or the fuse on the ground (GND) 29 side is cut. If either fuse is completely cut, trimming is performed. No current flows from the circuit power supply terminal 28 to the ground (GND) 29.

  In all trimming elements 27 connected to the signal line from the control logic circuit 25 to the temperature characteristic correcting variable resistor 23, trimming is performed by either a fuse on the trimming circuit power supply terminal 28 side or a fuse on the ground (GND) 29 side. Therefore, after trimming, it is possible to check whether the trimming of all the trimming elements 27 has been successful by monitoring the current flowing from the power supply terminal 28 for the trimming circuit to the ground (GND) 29. Become. By confirming whether or not the trimming is successful, high reliability of the trimming can be obtained.

  In addition, by cutting the fuse, the potential is physically fixed such as by pulling up to the trimming circuit power supply terminal 28 or pulling down to the ground (GND) 29 by a resistor. The trimming state does not change due to the above and the like, and is particularly suitable for mounting in a device that is used in a severe environment with respect to noise resistance and has a wide use temperature range for automobiles and the like.

  The fuse for cutting may be made of a low impedance material used in a semiconductor integrated circuit chip, such as aluminum wiring, copper wiring, or polysilicon.

  5 shows an example of the band gap reference voltage generation circuit 21, the band gap reference voltage generation circuit 21 is not limited to this example, and any band gap reference voltage generation circuit may be used.

  Also, if the resistance value constants of the resistors are set to different values as necessary, the number of resistance value steps to be varied by the temperature characteristic correcting variable resistor 23 can be increased by the combination of the resistors to be activated. .

  For example, in FIG. 7, in the present embodiment, if the resistance values of the six resistors are all set to different values, the resistance value of the temperature characteristic variable resistor 23 can be varied with 7 × 7 = 49 steps.

  FIG. 9 is an example of a result of the output voltage when the output voltage of the bandgap reference voltage generation circuit 21 is adjusted by the above method. In this case, the temperature characteristic is the smallest when the output voltage is near 1.21V. Since the output voltage when the temperature characteristic is the smallest varies depending on the circuit configuration, constants, processes, etc., it is determined by simulation, product evaluation, etc. during product development, and the band gap reference voltage is generated. Trimming is performed so that the output voltage of the circuit 21 becomes the value of the determined output voltage.

  In this embodiment, the band gap circuit 22 uses a general band gap reference voltage generation circuit. However, other possible band gap reference voltage generation circuits may be used, and these band gap reference voltage generation circuits may be used. Needless to say, the resistance value can be trimmed by the method described above for the resistance related to the temperature characteristics.

  In the above embodiment, in order to trim the output voltage of the bandgap reference voltage generation circuit 21, the resistance value of the temperature characteristic correcting variable resistor 23 is operated by operating the control logic circuit 25 with a signal from the tester. Therefore, the output voltage of the band gap reference voltage generation circuit 21 can be finely trimmed, and an accurate output voltage can be obtained.

  The trimming of the output voltage of the bandgap reference voltage generation circuit 21 can be performed by adjusting the size of the transistor in the bandgap circuit 22, but in this case, the area of the transistor added for trimming is small. The area of the temperature characteristic correcting variable resistor 23 is larger.

  Further, by using the temperature characteristic correcting variable resistor 23, an increase in the area of the circuit for trimming the output voltage of the bandgap reference voltage generating circuit 21 can be minimized, and the temperature characteristic correcting variable resistor 23 is used. By performing trimming using a fuse to fix the resistance value of the chip, an increase in chip area due to the addition of the trimming circuit 24 can be minimized, and trimming is performed without deteriorating high temperature leakage and noise tolerance. Therefore, it is possible to obtain a highly accurate reference voltage at a low cost without deteriorating the reliability required for automobile applications.

(Embodiment 2)
FIG. 10 is a circuit diagram showing an example of the configuration of the bandgap reference voltage generating circuit with trimming function according to the second embodiment of the present invention, and FIG. 11 is a bandgap reference with trimming function according to the second embodiment of the present invention. FIG. 12 is a circuit diagram showing an example of the configuration of the voltage generation circuit. FIG. 12 is a circuit diagram showing an example of a temperature characteristic correcting resistor in the band gap reference voltage generation circuit with a trimming function according to the second embodiment of the present invention. 13 is a circuit diagram showing an example of a temperature characteristic correcting resistor in the band gap reference voltage generating circuit with trimming function according to the second embodiment of the present invention, and FIG. 14 is a band with trimming function according to the second embodiment of the present invention. FIG. 6 is a circuit diagram showing an example of a temperature characteristic correcting resistor in the gap reference voltage generating circuit.

  In the second embodiment, the temperature characteristic correcting variable resistor 23 is connected in parallel to the resistor 30 in the band gap circuit 22 as shown in FIG. In FIG. 11, the temperature characteristic correcting variable resistor 23 is connected in parallel to the resistor 31 in the band gap circuit 22.

  In these circuits, by varying the resistance value of the temperature characteristic correcting variable resistor 23, the resistance value at both ends of the resistor 30 or 31 is varied, the value of the output voltage of the band gap circuit 22 is varied, and the temperature It is possible to obtain an output voltage of the bandgap reference voltage generation circuit that has a minimum characteristic.

  FIGS. 12, 13, and 14 are examples of the internal circuit of the temperature characteristic correcting variable resistor 23 in this embodiment. Since the trimming method is the same as that in the first embodiment, description thereof is omitted here.

  Here, a semiconductor element such as an NMOS transistor, a PMOS transistor, an NPN transistor, a PNP transistor, a transmission gate, or the like can be used as the switch. However, when a PMOS transistor is used, the element area of the switch should be minimized. Is possible.

  The configuration of the temperature characteristic correcting variable resistor described above is several examples, and it goes without saying that the number of resistors and the combination method can be arbitrarily configured as necessary.

  In this embodiment, the band gap circuit 22 uses a general band gap reference voltage generation circuit. However, other possible band gap reference voltage generation circuits may be used, and these band gap reference voltage generation circuits may be used. Needless to say, the resistance value can be trimmed by the method described above for the resistance related to the temperature characteristics.

  In the above embodiment, in order to trim the output voltage of the bandgap reference voltage generation circuit 21, the resistance value of the temperature characteristic correcting variable resistor 23 is set by operating the control logic circuit 25 according to a signal from the tester. Since it can be changed in fine steps, the output voltage of the bandgap reference voltage generation circuit 21 can be finely trimmed, and an accurate output voltage can be obtained.

  The trimming of the output voltage of the bandgap reference voltage generation circuit 21 can be performed by adjusting the size of the transistor in the bandgap circuit 22, but in this case, the area of the transistor added for trimming is small. The area of the temperature characteristic correcting variable resistor 23 is larger.

  Furthermore, by using the temperature characteristic correcting variable resistor 23, an increase in the area of the circuit for trimming the output voltage of the bandgap reference voltage generating circuit can be minimized, and the temperature characteristic correcting variable resistor 23 By performing trimming using a fuse to fix the resistance value, an increase in chip area due to the addition of the trimming circuit 24 can be minimized, and trimming can be performed without deteriorating high-temperature leakage and noise tolerance. Therefore, it is possible to obtain a highly accurate reference voltage at a low cost without deteriorating the reliability required for automobile applications.

(Embodiment 3)
FIG. 15 is a circuit diagram showing an example of a trimming circuit in which a bandgap reference voltage generation circuit with a trimming function is applied to an example of an automobile transmission control system according to Embodiment 3 of the present invention.

  In the third embodiment, in the trimming circuit 24 according to the first and second embodiments, as shown in FIG. 15, the pull-up resistor 32 and the second constant current are used as the first constant current. This is replaced with a pull-down current 33 which becomes a current.

  In FIG. 15, if necessary, the area of the trimming circuit on the semiconductor integrated circuit chip can be reduced by applying this embodiment.

  An example of the trimming method of the output voltage of the bandgap reference voltage generation circuit 21 is the same as the method described in the first embodiment and the second embodiment, and thus the description thereof is omitted here.

(Embodiment 4)
FIG. 16 is a circuit diagram showing an example of the arrangement of the trimming circuit and the band gap reference voltage generation circuit on the chip layout in the band gap reference voltage generation circuit with a trimming function according to the fourth embodiment of the present invention.

  19 and 20 are diagrams for explaining the influence of laser trimming on adjacent blocks, for example. In the figure, in order to irradiate the fuse 102 of the trimming circuit 24 with the laser beam 101, the second oxide film 105 has a hole, and the fuse 102 is directly irradiated with the laser beam 101.

  Further, in order to surely cut the fuse 102, it is necessary to set the laser beam 101 to be stronger. In that case, it is conceivable that the laser beam 101 penetrates the first oxide film 104 of the semiconductor integrated circuit chip and reaches the diffusion layer 103. In this case, when the physical property changing portion 109 is generated and reaches the separation layer 107 and the adjacent block 108, the surrounding blocks are affected.

  Although the fuse 102 is formed in the same process as the wiring 106 here, it is needless to say that the fuse 102 can be generated in another wiring process or a polysilicon process.

  FIG. 16 shows an example of a layout arrangement that does not affect the characteristics of the semiconductor integrated circuit chip even when the physical property changing unit 109 reaches the adjacent block 108 as described above.

  For example, when the circuit most susceptible to the influence of the physical property changing unit 109 in FIG. 19 is the band gap reference voltage generation circuit 21, the band gap reference voltage generation circuit 21 should be arranged as far as possible from the trimming circuit 24. desirable.

  In the present embodiment, the trimming circuit 24 and the band gap reference voltage generation circuit 21 are arranged as far as possible on the chip, and the trimming circuit 24 is arranged at the end of the semiconductor integrated circuit chip 100.

  In the fourth embodiment, an adjacent block 108 is disposed between the trimming circuit 24 and the band gap reference voltage generation circuit 21. The adjacent block 108 is a circuit block that does not cause a problem even if it is affected by trimming such as a laser, or Arrange elements and the like.

  Further, if the trimming circuit 24 is arranged at the end of the chip, the number of elements arranged around the trimming circuit 24 can be reduced as much as possible. By implementing this arrangement, the band gap reference voltage generation circuit 21 is not affected by the fuse cutting process using a laser or the like, and it is possible to obtain a highly reliable output voltage of the band gap reference voltage circuit. .

  Examples of blocks or circuits that are not easily affected by the physical property changing unit 109 include a startup circuit, a resistance of the startup circuit, and other simple pull-up resistors and pull-down resistors.

(Embodiment 5)
FIG. 17 is a circuit diagram showing an example of the arrangement of the trimming circuit and the bandgap reference voltage generation circuit on the chip layout in the bandgap reference voltage generation circuit with a trimming function according to the fifth embodiment of the present invention.

  In the fifth embodiment, another example of the layout arrangement that does not affect the characteristics of the semiconductor integrated circuit chip even when the physical property changing unit 109 reaches the adjacent block is shown. In FIG. 17, adjacent blocks that are not affected even when the physical property changing unit 109 reaches are arranged so as to surround the band gap reference voltage generation circuit 21.

  By implementing this arrangement, the band gap reference voltage generation circuit 21 is not affected by the fuse cutting process using a laser or the like, and it is possible to obtain a highly reliable output voltage of the band gap reference voltage circuit. .

(Embodiment 6)
FIG. 18 is an explanatory diagram showing an example of the arrangement of power and ground (GND) on the chip layout and assembly in the band gap reference voltage generating circuit with a trimming function according to the sixth embodiment of the present invention.

  In the sixth embodiment, the semiconductor integrated circuit chip 100 includes a bonding pad 110, the band gap reference voltage generation circuit 21 described in the first to third embodiments, and the first to third embodiments as illustrated. The trimming circuit 24 and the test pad 26 described in the first to third embodiments are provided. Then, package lead frames 112 are formed on the periphery of the mold resin 111 to be a package.

  In this figure, the trimming circuit 24 and the bandgap reference voltage generation circuit 21 are arranged apart from each other on the chip, and the adjacent blocks of the trimming circuit 24 are not functionally affected even if they are affected by trimming such as a laser. Circuit blocks or elements are arranged.

  The power supply 34 of the bandgap reference voltage generation circuit 21 serving as the third power supply and the ground 35 serving as the fourth power supply are provided close to the block of the bandgap reference voltage generation circuit 21, and pads are provided so as to lead the package. Are directly connected by wire bonding 113.

  Here, the power supply 34 of the band gap reference voltage generation circuit 21 and the ground 35 are laid out so that the impedance of the metal wiring on the semiconductor integrated circuit chip is as small as possible.

  For this reason, the impedance between the power supply 34 line of the bandgap reference voltage generation circuit 21 and the power supply outside the package, and the impedance between the ground 35 line of the bandgap reference voltage generation circuit 21 and the potential of the ground 35 outside the package can be as much as possible. Can be small.

  That is, the impedance matching between the power supply 34 and the ground 35 of the band gap reference voltage generation circuit can be optimized, and the influence of the external noise on the output voltage of the band gap reference voltage generation circuit 21 can be reduced.

  By implementing this configuration, the band gap reference voltage generation circuit 21 is not only affected by the cutting process of the fuse by a laser or the like, but also has high resistance to external noise, and is highly reliable and highly accurate. The output voltage of the bandgap reference voltage circuit can be obtained.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

  For example, in the first to sixth embodiments, the reference voltage of the transmission solenoid driver current detection circuit for automobiles is described as the band gap reference voltage generation circuit used for automobiles. However, the present invention is not limited to this, and is used for automobiles. General reference voltage generation circuit for electronic control unit for engine control, electronic control unit for airbag control, electronic control unit for ABS control, electronic control unit for electric power steering, electronic control unit for body control, etc. The present invention can be widely applied to the reference voltage generating circuit of the electronic control unit.

  Further, the present invention can be widely applied not only to automobiles but also to reference voltage generation circuits for consumer electronic devices.

  The present invention is suitable for a reference voltage generation technique for an automobile transmission solenoid driver current detection circuit.

DESCRIPTION OF SYMBOLS 1 Semiconductor integrated circuit 2 Pre-driver part 3 Control circuit 4 AD converter 5 Pre-driver 6 Current detection amplifier 7 Reference voltage 8 Communication interface 9 Temperature sensor 10 Pressure sensor 11 1st Hall sensor 12 2nd Hall sensor 13 Solenoid driver 14 Resistance 15 Iron Core 16 Solenoid coil 17 Sensor interface 18 MCU
19 External Tester 21 Band Gap Reference Voltage Generation Circuit 22 Band Gap Circuit 23 Variable Resistance 24 for Temperature Characteristic Correction Trimming Circuit 25 Control Logic Circuit 26 Test Pad 27 Trimming Element 28 Trimming Circuit Power Supply Terminal 29 Ground 30 Resistance 31 Resistance 32 Pull-up Current 33 Pull-down current 34 Power supply 35 Ground (GND)
100 Semiconductor Integrated Circuit Chip 101 Laser Light 102 Fuse 103 Diffusion Layer 104 First Oxide Film 105 Second Oxide Film 106 Wiring 107 Separation Layer 108 Adjacent Block 109 Physical Property Change Part 110 Bonding Pad 111 Mold Resin 112 Lead Frame 113 Wire Bonding

Claims (11)

A band gap reference voltage generation circuit capable of adjusting the output voltage;
A plurality of trimming circuits;
The bandgap reference voltage generation circuit includes:
It has a variable resistor for temperature characteristic correction to correct the temperature characteristic of the output voltage,
The temperature characteristic correcting variable resistor is
Connected to the outputs of the plurality of trimming circuits;
The resistance value of the variable resistor for temperature characteristic correction is varied according to the potential of the output of the plurality of trimming circuits, and the temperature characteristic of the output voltage of the band gap reference voltage generation circuit is corrected,
The plurality of trimming circuits are connected to a first power source via an arbitrary impedance and a first fuse, and are connected to the first power source via an arbitrary impedance and a second fuse. Connected to a second power source at a low potential;
A semiconductor integrated circuit device, wherein the output voltage of the trimming circuit is set by cutting either the first fuse or the second fuse. The semiconductor integrated circuit device according to claim 1.
A control logic circuit;
The control logic circuit is
Connected to the outputs of the plurality of trimming circuits through a plurality of fuses,
A semiconductor integrated circuit device, wherein the output potentials of the plurality of trimming circuits are arbitrarily adjusted by changing the output potentials of the plurality of trimming circuits by the control logic circuit. The semiconductor integrated circuit device according to claim 1.
By measuring the current value of the first power supply, it is possible to confirm that either the first fuse or the second fuse is cut after trimming. Circuit device. The semiconductor integrated circuit device according to claim 2.
After cutting the first fuse or the second fuse of each of the trimming circuits and setting the output potential of each of the plurality of trimming circuits, the plurality of trimming circuits and the control logic circuit are connected. A semiconductor integrated circuit device, wherein all of the plurality of fuses are cut. In claim 2,
A test pad capable of monitoring an output voltage of the band gap reference voltage generation circuit;
A semiconductor integrated circuit, wherein the control logic circuit changes the output potential of the plurality of trimming circuits and arbitrarily adjusts the output potential of the plurality of trimming circuits while monitoring the voltage of the test pad. apparatus. In claim 2,
The temperature characteristic correcting variable resistor is
Multiple resistors,
A plurality of switches,
A semiconductor integrated circuit device characterized in that a combination of the resistors enabled by the plurality of switches is changed to change a resistance value of the temperature characteristic correcting variable resistor. A band gap reference voltage generation circuit capable of adjusting the output voltage;
A plurality of trimming elements;
The band gap reference voltage generation circuit is formed on a semiconductor integrated circuit chip,
2. The semiconductor integrated circuit device according to claim 1, wherein the bandgap reference voltage generating circuit is disposed on the semiconductor integrated circuit chip at a location separated from the trimming element by a predetermined distance or more. The semiconductor integrated circuit device according to claim 7,
The trimming element is
A semiconductor integrated circuit device arranged at an end of the semiconductor integrated circuit chip. The semiconductor integrated circuit device according to claim 8.
The bandgap reference voltage generation circuit includes:
A semiconductor integrated circuit device arranged near the center of the semiconductor integrated circuit chip. The semiconductor integrated circuit device according to any one of claims 1 to 9,
The bandgap reference voltage generation circuit includes:
A third power source;
A fourth power source having a lower potential than the third power source,
A current is supplied from the third power source, the fourth power source is set to the lowest potential,
The third power supply bonding pad and the fourth power supply bonding pad are disposed adjacent to or in close proximity to the block of the band gap reference voltage generation circuit,
The bonding pad of the third power source and the lead frame of the package are directly connected by wire bonding,
The semiconductor integrated circuit device, wherein the fourth power source and the lead frame of the package are directly connected by wire bonding. A band gap reference voltage generation circuit capable of adjusting the output voltage;
A plurality of trimming circuits;
The bandgap reference voltage generation circuit includes:
It has a variable resistor for temperature characteristic correction to correct the temperature characteristic of the output voltage,
The temperature characteristic correcting variable resistor is
Connected to the outputs of the plurality of trimming circuits;
The resistance value of the variable resistor for temperature characteristic correction is varied according to the potential of the output of the plurality of trimming circuits, and the temperature characteristic of the output voltage of the band gap reference voltage generation circuit is corrected,
The output of the band gap reference voltage generation circuit whose temperature characteristics are corrected is
A semiconductor integrated circuit device characterized by being a reference voltage for a circuit for measuring a current flowing through a solenoid driver for controlling hydraulic pressure of an in-vehicle transmission control.

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