JP2010177063A - Probe device and probe regeneration method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To process a probe by avoiding inadvertent damage on a sample and reducing scattering and adhesion as much as possible of sputtering particles of heavy metal which are constituents of the probe and a sample stage. <P>SOLUTION: In a probe device having an ion beam system for irradiating an ion beam, and a probe control device for driving the probe arranged in a vacuum sample chamber, a zone for processing the probe with ion beams is arranged in the sample chamber, and sputter particles of the probe and ion beams passing through in the vicinity of the probe are captured in the zone. The probe device reduces adverse effect on the sample caused by sputter particles generated by ion beam irradiation to the probe, debris of the probe, and the ion beams passing through the vicinity of the probe. Thus, a probe shape is reproduced in the sample chamber, and the probe is continuously used for a long period. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an ion beam apparatus provided with a probe.

  A probe is built in the vacuum sample chamber of a focused ion beam device (FIB device), and a small sample can be extracted from a mother sample placed on the sample stage, a minute object can be moved, There is a probe device that contacts a wiring to supply a voltage or detect a signal. The ion beam apparatus is, for example, an apparatus that irradiates a focused ion beam (FIB) in which the diameter of the ion beam irradiated on the sample is focused to 10 nm or less, or an aperture mask shape disposed between the ion source and the sample. This is an apparatus for irradiating a projection ion beam, which is a beam having a reduced shape.

  The probe can be moved in the vacuum sample chamber by the probe driving means, but the probe driving means may be inside or outside the vacuum sample chamber. The sample or probe in the vacuum sample chamber may be imaged by secondary electrons generated by ion beam irradiation, or may be observed as a secondary electron image by an electron beam of an electron beam column mounted on the same apparatus.

  A focused ion beam apparatus provided with a probe that operates in a vacuum sample chamber is disclosed in, for example, Japanese Patent Laid-Open No. 5-28950 (Patent Document 1) and Japanese Translation of PCT International Publication No. 99-05506 (Patent Document 2).

  Japanese Patent Application Laid-Open No. 5-28950 (Patent Document 1) discloses a method of separating a minute sample piece from a sample in a vacuum sample chamber using focused ion beam processing and a probe.

  In International Publication No. 99/05506 (Patent Document 2), a fine sample piece is extracted from a sample in a vacuum sample chamber using a focused ion beam processing and a probe, and a transmission electron microscope prepared in advance in the vacuum sample chamber is used. A method and apparatus for transferring to a sample holder and processing into a thin piece that can be observed with a transmission electron microscope is disclosed.

  In Japanese Patent Application Laid-Open No. 2004-276103 (Patent Document 3), in a processing apparatus using a focused ion beam, the probe tip is polished by irradiating the focused ion beam after cutting the probe tip with the focused ion beam. Is disclosed.

  In Japanese Patent Laid-Open No. 2005-300442 (Patent Document 4), in a composite apparatus in which a charged particle beam apparatus such as a focused ion beam apparatus and a probe microscope are integrated into an integrated system, the probe tip wears and lacks. Processing using a charged particle beam is disclosed.

Japanese Patent Application Laid-Open No. 5-28950 International Publication No. 99/05506 JP 2004-276103 A JP-A-2005-300442

  The inventor of the present application diligently studied probe processing using an ion beam, and as a result, the following knowledge was obtained.

  A sharpened probe is placed in the vacuum sample chamber of a focused ion beam device or a mixed mounting device of a focused ion beam device and a scanning electron microscope (SEM), and the probe is brought into contact with the sample so that the potential is applied to the sample. There are devices that have a function of supplying, a function of extracting a micro sample for observation by a transmission electron microscope from a sample with a probe, and a function of transporting a micro object with a probe in a vacuum. The probe used in such an apparatus is generally a metal fine needle (usually tungsten, molybdenum or the like) having a diameter of about 100 nm, a length of about 10 mm, and a sharpened tip radius of curvature of about 1 μm.

  In these apparatuses, as shown in FIG. 2, the probe tip may be deformed by contact with a sample or other components (a), or a foreign substance 33 may adhere to the probe tip (b). In this case, since it is different from the initial sharpened tip shape, the desired work may not be performed. In such a case, it is best to replace the probe with a new one, but it is uneconomical to replace the probe every time a slight deformation or foreign matter adheres. Therefore, whenever the probe tip is deformed or foreign matter is attached, the probe tip may be cut or shaped by a focused ion beam, or the foreign matter may be sputtered out to surpass the sudden field.

  However, when a probe (usually made of heavy metal such as tungsten or molybdenum) is regenerated with a focused ion beam in a vacuum sample chamber in which the sample is introduced in a probe apparatus that handles samples such as semiconductor wafers and devices that are severely clean of the sample, The present inventor has found that a serious problem occurs. This will be described with reference to FIG.

  In the focused ion beam apparatus, the probe is processed by scanning the focused ion beam with a scanner (not shown). The sputtered particles of the probe from the ion beam irradiation part are scattered in all directions, and part of them adhere to the sample. Further, when the probe tip is separated by ion beam irradiation, the probe tip piece falls on the sample surface. Furthermore, the ion beam that has passed through the vicinity without irradiating the probe reaches the surface of the sample or the sample stage, and opens an unintended irradiation hole in the sample or the sample stage. Furthermore, the ion beam that has passed in the vicinity of the probe scatters the sample and sputtered particles on the sample stage, and attaches an unintended substance to the sample. Since the sample stage is made of metal such as stainless steel, the adhesion of sputtered metal particles to the semiconductor wafer leads to metal contamination of the wafer, affecting the electrical properties of the sample and giving incorrect information to the analysis. This may cause new ripple problems. Such a problem occurs not only in the focused ion beam but also in the projected ion beam.

  An object of the present invention relates to processing a probe by avoiding unintentional damage to the sample and reducing scattering and adhesion of sputtered particles of heavy metal, which is a component of the probe and sample stage, to the sample as much as possible.

  The present invention relates to a probe apparatus including an ion beam apparatus that can irradiate an ion beam and a probe control apparatus that drives a probe disposed in a vacuum sample chamber. And the ion beam that has passed through the vicinity of the probe and the vicinity of the probe is captured in the region.

  According to the present invention, it is possible to reduce adverse effects on a sample or the like caused by sputtered particles generated by irradiation of an ion beam to the probe, probe fragments, an ion beam passing near the probe, and the like. For this reason, the probe shape can be regenerated in the sample chamber, and the probe can be used continuously for a long time.

The schematic of the whole structure of the probe apparatus in an Example. Explanatory drawing of the problem in a probe. Explanatory drawing of the probe reproduction | regeneration method in a probe apparatus. Explanatory drawing of the new problem in a probe reproduction | regeneration method. The expanded sectional view of the probe reproduction | regeneration part in an Example. Explanatory drawing of the effect of a probe reproduction | regeneration part. The expanded sectional view of the modification of a probe reproduction | regeneration part. Explanatory drawing of the effect in the modification of a probe reproduction | regeneration part. The expanded sectional view of the 2nd modification of a probe reproduction | regeneration part (it also serves as explanatory drawing of an effect). The expanded sectional view which shows another form of the probe reproduction | regeneration part in an Example. Explanatory drawing of the probe reproduction | regeneration method using a focused ion beam. Explanatory drawing of the probe reproduction | regeneration method using a projection ion beam. Explanatory drawing of the probe reproduction | regenerating method (side). The flowchart which shows a probe reproduction | regeneration procedure. The schematic of the operation screen of the probe apparatus in an Example. The schematic of the operation screen of the probe apparatus in an Example (probe operation screen). The schematic of the operation screen of the probe apparatus in an Example (stage operation screen and probe reproduction screen).

  In the embodiment, a vacuum sample chamber, a sample stage disposed in the vacuum sample chamber and on which a sample can be placed, a probe control device capable of driving a probe disposed in the vacuum sample chamber, and an ion beam irradiation device capable of irradiating an ion beam A secondary particle detector capable of detecting secondary particles generated by ion beam irradiation, an arithmetic device for processing signals from the secondary particle detector, and an image of the ion beam irradiation region imaged by the arithmetic device And a probe reproducing unit for processing the probe by irradiating the probe with an ion beam in a vacuum sample chamber.

  In addition, the embodiment discloses that the probe reproducing unit is provided on the sample stage, and the probe stage can be moved to the ion beam irradiation region by moving the sample stage to process the probe.

  In addition, the embodiment discloses that the probe reproducing unit can be attached to and detached from the sample stage.

  In the embodiment, the probe reproducing unit can be driven independently of the sample stage, and the probe reproducing unit can be moved to the ion beam irradiation region without moving the sample stage so that the probe can be processed. Disclose.

  In addition, the embodiment discloses that the probe reproducing unit has a concave shape having an opening on the upstream side of the ion beam and a bottom on the downstream side of the ion beam.

  In addition, the embodiment discloses that the bottom of the probe reproducing unit is located at a position deeper than the longest side or the longest diameter of the opening.

  In the embodiment, the probe reproducing unit has a concave shape having at least a first opening into which the tip of the probe can be inserted, a second opening through which the ion beam can pass, and a bottom on the downstream side of the ion beam. Is disclosed.

  In addition, in the embodiment, it is disclosed that the probe reproducing unit has a shape in which the area of the bottom is larger than the opening and the inside of the concave shape is widened.

  In addition, the embodiment discloses that the probe device includes an electron beam irradiation device that irradiates an electron beam.

  Further, in the embodiment, it is disclosed that a portion in contact with the vacuum in the vacuum sample chamber in the probe reproducing unit is formed of silicon.

  Further, the embodiment discloses that the ion beam irradiated by the ion beam irradiation apparatus is a focused ion beam.

  In addition, the embodiment discloses that the ion beam irradiated by the ion beam irradiation apparatus is a projection ion beam.

  Further, in the embodiment, the probe device has a mechanism capable of rotating the probe about the probe axis, and the arithmetic device compares the probe side surface allowable shape registered in advance with the arithmetic device and the probe side surface shape, and the probe side surface shape Discloses that the probe is processed into a pre-registered probe side reference shape when the probe allowable side shape deviates.

  In the embodiment, the arithmetic unit periodically observes the probe, compares it with the probe shape to be regenerated in advance, and registers the probe in advance when the probe shape is out of the probe shape to be regenerated. It is disclosed to regenerate the reproduction probe shape.

  Further, in the embodiment, the arithmetic unit observes the probe, compares it with the pre-registered allowable dimension range of the reference probe, and registers the probe in advance when the probe dimension is outside the registered allowable probe dimension range. It is disclosed to regenerate the regenerated probe shape.

  In addition, in the embodiment, when the arithmetic unit periodically observes the probe and the probe shape deviates from the probe shape to be reproduced as compared with the probe shape to be reproduced in advance, the probe is exchanged or reproduced. It is disclosed that a display prompting the user is displayed on the display.

  Further, in the embodiment, when the control device observes the probe and compares the preliminarily registered allowable dimension range of the reference probe with the probe dimension that is out of the registered allowable probe dimension range, the probe is replaced. Alternatively, it is disclosed that a display for prompting reproduction is displayed on the display.

  Further, in the embodiment, the probe to be regenerated is moved to the ion beam irradiation region by the control of the arithmetic device, and the probe regenerating unit is positioned at the downstream side of the ion beam with respect to the probe to be regenerated by the control of the arithmetic device. A method for regenerating a probe operable in a vacuum sample chamber is disclosed in which a probe is irradiated with an ion beam from an ion beam device under the control of a computing device.

  Further, in the embodiment, the image of the probe reproducing unit is displayed on the display by the arithmetic device, the image of the probe to be reproduced is displayed on the display by the arithmetic device, and the ion beam is irradiated to the arithmetic device so that a predetermined probe shape remains. A method of regenerating a probe operable in a vacuum sample chamber is disclosed in which a region is set and an ion beam is irradiated from an ion beam device under the control of a calculation device based on the setting.

  In the embodiment, the ion beam irradiation area is stored in advance in the arithmetic unit, and the ion beam irradiation area is displayed on the display so as to overlap the image of the probe to be reproduced, and the ion beam from the ion beam apparatus is controlled by the arithmetic unit. A method for regenerating a probe operable in a vacuum sample chamber is disclosed.

  Further, the embodiment discloses that the ion beam irradiation region for reproducing the probe is a scanning region of the focused ion beam.

  In addition, the embodiment discloses that the ion beam irradiation region for reproducing the probe is a reduced shape of the aperture mask for forming the projection ion beam.

  The above and other novel features and effects of the present invention will be described below with reference to the drawings. It should be noted that the drawings are used exclusively for explanation and do not reduce the scope of rights. In addition, a plurality of embodiments disclosed in the examples can be appropriately combined.

〔Example〕
The configuration of the probe apparatus according to the present embodiment will be described with reference to FIG. 1, and the probe regeneration method according to the present embodiment will be described later with reference to FIGS.

(1) Overall Configuration of Probe Device FIG. 1 is a schematic configuration diagram of a probe device in the present embodiment, which is drawn by seeing through a part of the inside of the device.

  A probe apparatus 100 includes an ion beam column 1 that generates an ion beam for observing and processing a sample and a probe 1, an electron beam column 2 that generates an electron beam for observing the surface shape of the sample and the probe, a vacuum sample chamber 3, a sample Are equipped with a sample stage 4, a sharpened probe 5, a probe driving unit 6 for finely moving the probe 5 in the vacuum sample chamber 3, a detector 8, a display 9, and a calculation processing unit 10. And the probe apparatus 100 has the probe reproduction | regeneration part 7 for processing a probe front-end | tip part with an ion beam.

  The electron beam column 2 can observe the surface of the sample 11 or the probe 5 by irradiating the sample 11 or the probe 5 with electrons generated from an electron source (not shown) in the form of a beam. By arranging both columns so that the irradiation position of the electron beam from the electron beam column 2 is substantially the same as the irradiation position of the ion beam from the ion beam column 1, the processing portion by the ion beam is observed by the electron beam. be able to. In FIG. 1, an ion beam column 1 is arranged in a vertical direction, and an electron beam column 2 is arranged in a direction inclined with respect to a horizontal plane. However, the arrangement is not limited to this, and for example, the electron beam column 2 may be arranged in the vertical direction, and the ion beam column 1 may be arranged in a direction inclined with respect to the horizontal plane.

  The sample stage 4 can place the sample 11 and can move a position necessary for processing and observing the ion beam to an ion beam irradiation position or to an observation position by an electron beam.

  The probe 5 can be moved in the vacuum sample chamber 3 by the probe driving unit 6, and is used for supplying a potential to the sample by contacting the sample surface or extracting a small sample piece formed on the sample. .

  The detector 8 is a detector for secondary electrons, secondary ions, backscattered electrons, X-rays, reflected electrons, transmitted electrons, and the like generated from an irradiation unit such as a sample or a probe by irradiation with an ion beam or an electron beam. These detection signals are processed and imaged by the calculation processing unit 10, and a secondary electron image, a secondary ion image, an elemental map by characteristic X-rays, a transmission electron image, and the like are displayed on the display 9.

  The probe reproducing unit 7 is arranged on the sample stage 4 at a position that does not overlap the sample. In this embodiment, one sample stage 4 is arranged at one corner. However, the arrangement location and the number of arrangements are not limited to this. For example, the sample stage 4 may be arranged at four corners.

  In this embodiment, when the probe tip is damaged, the probe tip is shaped by an ion beam in the probe reproducing section in the vacuum sample chamber, instead of taking out the probe from the vacuum sample chamber and replacing the probe. During ion beam irradiation, the ion beam that has passed near the probe without hitting the probe does not directly hit the sample. Sputtered particles generated from the probe irradiated with the ion beam or ions that have passed near the probe It is devised so that sputtered particles generated from the beam irradiation part do not adhere to the sample surface.

(2) Probe regeneration unit Hereinafter, a specific structure of the probe regeneration unit in the present embodiment will be described with reference to FIGS.

FIG. 5 is a longitudinal sectional view of the probe reproducing unit 51. It comprises an opening 52 present on the surface of the sample stage 34, a bottom 53 present on the opposite side, and a side surface 54 connecting the opening 52 and the bottom 53, and can be attached to and detached from the sample stage 34. The upper surface of the opening 52 is arranged so as to be substantially flush with the sample (wafer) surface. This eliminates the need to adjust the focus of the ion beam when the probe is irradiated with the ion beam. Since the ion beam irradiation range at the time of probe regeneration is about 50 μm ² at most, if the opening 52 is a circular hole with a diameter of 1 mm or a square with a side of 1 mm, all the ion beams that pass through the vicinity of the probe are incident from the opening 52. The bottom 53 is reached. The depth to the bottom is sufficiently deep as 10 mm so that sputtered particles generated by the ion beam reaching the bottom 53 do not jump out of the opening 52. In addition, the outer diameter of the side surface is 5 mm, the inner diameter is 4 mm, and the size is easy to handle manually. Moreover, it can be attached to and detached from the sample stage. In the probe reproducing unit having the above dimensions, even if the probe is frequently regenerated, the inside of the reproducing unit is unlikely to be filled with probe fragments, and it is sufficient to replace the probe once every two years. . Note that the dimensions of the probe reproducing unit are not limited to these numerical values, and can be appropriately designed according to the purpose.

  FIG. 6 shows the state of the probe regeneration operation using the probe regeneration unit 51.

  Of the sputtered particles 36 generated by irradiating the probe 31 with the ion beam 35, most of the irradiation direction of the ion beam 35 reaches the inside of the probe reproducing unit. By taking into account the angle between the probe and the sample surface and the diameter of the opening, the amount of sputtered particles captured from the probe can be further increased by regenerating the tip of the probe slightly inside the upper end of the opening. . Although the shape of the bottom 53 may be flat, most of the stapper particles 42 </ b> B generated by the ion beam 41 irradiating the bottom 53 are formed on the inner wall of the side surface 54 by forming a conical shape with a slightly raised central portion. It is possible to reduce the number of stapper particles 42 </ b> B that adhere and jump out of the opening 52. Reference numeral 55 denotes the sputtered particles 36 and 42B from the probe 31 and the bottom 53 deposited inside the side surface portion 54. Further, the small piece 31 ′ obtained by cutting the tip of the probe 31 adheres to the inside of the bottom 53 or the side surface 54, and therefore does not adhere to the sample or a precise mechanism portion of the sample stage. Further, in the probe reproducing unit 51, the opening 52 and the bottom 53, which are particularly likely to receive direct ion beam irradiation, are made of silicon, and sputtered particles generated from the irradiation unit of the ion beam 41 that has passed near the probe. Even if 42B adheres to the sample, metal contamination does not occur. In addition, the location made of silicon is not limited to the opening 52 and the bottom 53, and the whole may be made of silicon. The material is not limited to silicon, and a material that does not cause metal contamination can be used as appropriate.

  Next, a modification of the probe reproducing unit is shown in FIG. A major difference from the probe reproducing unit disclosed in FIG. 5 is a lid 56 that restricts the opening 52A and an opening 52B in which the probe can be inserted into the side surface 54. The upper surface of the lid 56 is at a position slightly higher than the surface of the sample 33. This height difference corresponds to the wafer thickness, and the upper surface of the lid 56 and the upper surface of the sample 33 are arranged to be the same surface. Further, there is an advantage that a probe to be regenerated can be easily put into the probe regenerating part 51 from the side surface part 54.

  The usage and effect of this probe reproducing unit will be described with reference to FIG. The probe 31 is inserted from the opening 52B and stopped when the tip of the probe 31 is located at the center of the opening 52A. Reproduction is performed by irradiating the probe 31 with the ion beam 35. Since a part of the sputtered particles 36 generated from the ion beam irradiating part adheres to the inside of the lid 56, the sputtered particles that reach the sample surface are the same as in the previous embodiment. Is further reduced. Note that the dimensions of the openings 52A and 52B are set to such a size that sufficient secondary electrons can reach the detector to confirm the image of the reproduction processing portion in the probe 31.

  FIG. 9 shows a second modification of the probe reproducing unit. This modification is a modification of FIG. 7, and the upper surface of the opening is flush with the sample stage surface. A slope is provided on the surface of the sample stage around the opening 52B so that the probe can be inserted into the opening 52B. Note that the shape and arrangement area of the probe are not limited to those shown in FIG. 7, and are appropriately designed according to the purpose.

(3) Installation Location of Probe Regeneration Unit The probe regeneration unit shown in FIGS. 5, 7, and 9 has a common feature that is detachably mounted on the sample stage. Here, as another installation example of the probe reproducing unit, a configuration example in which the probe reproducing unit is mounted on a drive mechanism that is installed apart from the sample stage and can move independently of the sample stage will be described with reference to FIG.

  In FIG. 10, the probe reproducing unit 51 is held at the tip of a linear introduction machine 59 that can move linearly. The straight line introduction machine 59 is fixed to a port provided in the vacuum sample chamber 3 through a vacuum seal. A known technique such as compressed air or a pulse motor can be used for the linear movement method of the probe regeneration unit 51. The main point is that when the probe regeneration is not performed, the protruding length of the straight line introduction portion is shortened to be retracted from the ion beam irradiation unit, and when the probe regeneration is necessary, the probe regeneration unit 51 is changed to the ion beam irradiation unit. The protrusion length of the straight line introduction portion is increased so as to be positioned. With such a configuration, even when the probe reproducing unit cannot be incorporated into the sample stage, the probe reproducing unit can be incorporated into the probe apparatus 100. In addition, the probe reproducing unit can be designed and manufactured independently of the sample stage. In addition, it is easy to design and manufacture when electrical wiring is required for the probe regeneration unit, such as supplying voltage to the opening. Furthermore, when exchanging the probe regeneration unit, it can be easily exchanged without accessing the sample stage.

(4) Ion beam column In the probe apparatus according to the present embodiment, the ion beam used for reproducing the probe is a focused ion beam or a projected ion beam.

  In the focused ion beam, the surface of the sample is observed or processed by scanning the ion beam focused on the sample with a diameter of several nanometers into a desired shape. Since the ion beam is digitally scanned, the irradiation region can have an arbitrary shape. Further, since the diameter of the focused ion beam is very small, a clear image with a high resolution of the observation image can be obtained.

  On the other hand, in the projection ion beam, the ion beam is allowed to pass through an aperture pattern disposed between the ion source and the sample, and a beam having a reduced shape of the aperture pattern is projected onto the sample. The processed shape of the projected ion beam is determined by the number of aperture patterns. Although it is not good at processing into various shapes, it is suitable for processing many of the same shapes. In addition, the surface of the sample can be observed in the same manner as the focused ion beam by scanning a beam using a pinhole as an aperture pattern. However, the observation resolution is usually worse than that of the focused ion beam.

  Although there is a complex optical system that can selectively irradiate focused ion beam and projection ion beam with one ion beam column, forming either focused ion beam or projection ion beam maximizes the performance of each beam. Since it is a good method for extracting, there are cases where a focused ion beam optical system and a projection ion beam optical system are provided in the apparatus.

  FIG. 11 is a diagram showing a method of reproducing the probe tip using a focused ion beam. (A) shows the tip part 62 of the normal sharpened probe 61, and the tip radius is about 1 μm. (B) shows a state in which the tip of the probe is missing, and is an example in which the radius of curvature of the tip exceeds 10 μm. (C) is an example in which both sides of the probe tip in (b) are removed by a focused ion beam, and reference numeral 65 indicates a focused ion beam scanning region. The focused ion beam scanning region is preliminarily stored in a computer as a processing file, and a processing file is selected and reproduced in accordance with the probe tip shape to be reproduced. (D) has shown the probe tip shape which performed probe reproduction | regeneration.

  FIG. 12 is a diagram showing a method of reproducing the probe tip using a projected ion beam. (A) has shown an example of the opening pattern 72 of the stencil mask 71 installed in the ion beam column. When the ion beam passes through the opening pattern 72, a reduced-shaped beam of the opening pattern 72 is formed, and the object can be processed into the shape. (B) shows a state in which the projection ion beam 73 having the same pattern is irradiated at two positions at the tip of the probe 64 to be reproduced with a slight gap. (C) is another example of the opening pattern 76, and the opening pattern 76 having the bridge portion 75 can be processed into a thin probe with one opening pattern 76. (D) shows this opening pattern. The projection ion beam shaped using 76 is irradiated to the tip of the probe 64 to be reproduced. (E) is the reproduction | regeneration probe 67 obtained by processing like (b) and (d), The front-end | tip part is the narrow probe 79. FIG. The above-described processed shape is merely an example, and the shape is not limited to this, and the shape of the probe tip can be changed by deforming the opening patterns 72 and 76.

(5) Probe side surface processing FIG. 11 and FIG. 12 show the shape of the reproduction probe sharpened to a narrow width. The tip is thinly processed from the viewpoint shown. However, when the viewpoint is changed by 90 °, that is, when the reproduction probe is viewed parallel to the paper surface, the probe tip is never sharpened. An example of processing the reproduction probe 67 processed in FIGS. 11 and 12 by changing the viewpoint will be described with reference to FIG.

  FIG. 13A shows a probe shape when the reproducing probe 67 is viewed from the ion beam irradiation direction (perpendicular to the paper surface), and corresponds to FIG. FIG. 13B shows a probe shape viewed from a direction (parallel to the paper surface) that is 90 ° different from the ion beam irradiation direction. For convenience, the probe shaft 80 is shown in the horizontal direction, but when the probe is mounted on the apparatus, the probe shaft 80 is inclined. The narrow distal end 79 in (a) has a shape having a thickness in the height direction in (b), and this width is applied to the probe before reproduction, for example, the distal end 63 in FIG. 11 (b). Correspond. With such a probe having a thickness at the probe tip, it is difficult to determine the exact contact position of the probe tip from the direction of observation by the ion beam or electron beam when contacting the target position of the sample. Therefore, the tip of the probe rotated by 90 ° is further irradiated with an ion beam, the region of reference numeral 81 in (c) is deleted by the ion beam, and the side opposite to the contact portion with the sample is trimmed again. (D) shows that the re-trimmed reproduction probe is installed in the apparatus. It can be seen that the sample surface is in contact with the probe tip 82 (in the horizontal direction).

  FIG. 14 is a flowchart showing the processing procedure.

  When it is necessary to reproduce the probe, first, as the first step 101, the probe reproducing unit is called. The probe reproducing unit moves and is arranged immediately below the ion beam irradiation. Next, as a second step 102, a probe to be reproduced is called on the display, and the probe tip is displayed. In this case, a probe reproducing unit is located on the back surface of the probe. Next, as a third step 103, a desired first reproduction probe pattern is selected from a previously registered first reproduction probe pattern group. The registered reproduction pattern may be a file name or a line drawing showing a characteristic shape. In the fourth step 104, the called first processing pattern is output to the image display unit and superimposed on the probe image. Since the irradiation ion beam conditions for the regenerated processing pattern shape are also registered in advance, if there is no large deviation in the overlap between the probe image and the pattern in the third step 103, processing by ion beam irradiation is started as the fifth step 105. To do. When the predetermined processing time is reached, the processing related to the first reproduction probe pattern is finished. Next, as the sixth step 106, the probe is rotated by 90 ° and arranged so that the processed surface in the fifth step 105 can be seen. At this time, an image similar to that seen in FIG. 13B can be observed. Here, in the seventh step 107, the second reproduction pattern from the viewpoint rotated by 90 ° is selected. Similar to the fourth step 104, as the eighth step 108, the probe image and the reproduction processing pattern are superimposed. The second reproduction pattern is a pattern for removing the upper half of the probe on the screen. If there is no large deviation in the overlap between the probe image and the pattern, ion beam irradiation is performed. When the processing with the second reproduction pattern is completed, as a tenth step 110, the probe is returned to the original position by returning −90 ° about the axis. A sharpened and thin probe is displayed on the screen. By confirming this, a series of procedures related to probe regeneration is completed 111.

  These procedures may be sequentially performed by an operator of the apparatus. Alternatively, a sequence may be stored in advance in the calculation processing unit and programmed to automatically perform a series of operations from the first step to the end by giving a start 112 command.

(6) Operation screen of probe device Next, an operation screen used when performing probe regeneration in the probe device of the present embodiment will be described.

  Probe regeneration work is performed by giving instructions from the display. An instruction from the display is transmitted to the ion beam control unit, the electron beam control unit, the sample stage control unit, the probe drive control unit, and the like through the calculation processing unit. The calculation processing unit can control each control unit, receive a signal from the detector, image the surface state of the sample and the probe, and display the image on the display. FIG. 15 is a display example on the display screen 201 of the display.

  The display screen 201 can display an image obtained by imaging a detection signal obtained by irradiation with light, an electron beam, or an ion beam, or an image display sheet 202 for selecting a beam. The image display sheet 202 includes an image display unit 203 that displays an image using light, an electron beam, or an ion beam. In addition, these OM (optical microscope image), SEM (scanning electron microscope image), SIM (scanning ion microscope image), STEM (scanning transmission electron image), EDX (element map by characteristic X-ray) are selectively displayed. The image display sheet has an image selection button 204 to be operated. When each of the OM, SEM, and SIM buttons is pressed, irradiation control is performed so that the light, electron beam, or ion beam properly displays an image of the object.

  FIG. 16 shows a probe operation screen 205, which is a screen for operating the movement of the probe in the vacuum sample chamber. When the probe is not used, the probe is usually retracted to a position about 20 mm away from the sample surface in order to avoid unexpected collision of the probe with various members in the vacuum sample chamber. Therefore, a call button 206 for calling a probe in the screen as needed and a retreat button 207 for retreating the probe to a retreat position are arranged on the probe operation screen 205. The movement start button 208 is a button for moving the destination of the probe 210 on the surface image 209 by designating the pointer 211. In addition, the code | symbol 212 on the surface image 209 is a pattern on a sample. The movement destination of the probe can be specified by a pointing device such as a mouse, a trackball, and a touch pen, and can also be controlled by a probe movement direction (X, Y, Z direction on the screen) instruction button 210. Further, the probe has a shaft rotation control unit that can rotate around the probe axis in the drive unit, and the probe operation screen 205 has a rotation angle instruction unit 213 that instructs the rotation angle of the shaft rotation. By selecting the surface image observation means, the shape of the probe to be reproduced can be observed and processed from various viewpoints. The vertical distance between the probe reproducing unit and the probe can be calculated from the tilt angle of the SEM optical axis, the observation magnification, and the measurement dimension based on the SEM image (tilt observation image) obtained from the tilted electron beam. In the calculation, since the calculation formula is stored in the calculation processing unit in advance, when the both ends of the interval desired to be known on the image are designated by the tating device, the interval is instantly indicated in μm. By referring to the interval value, the SEM image, and the SIM image, the probe tip can be accurately brought into contact with the end of the opening. If the probe must be stopped urgently during the operation of the probe, the stop button 214 is pressed.

  FIG. 17 shows a stage operation screen 221 and a probe reproduction screen 222.

  The stage operation screen 221 includes a coordinate input unit 223 for inputting X, Y, Z coordinate values, R (rotation angle), and T (tilt angle) of a stage movement destination, and a probe for starting movement of the stage to a predetermined position. A playback unit button 224 is provided.

  The probe reproduction screen 222 has a probe reproduction unit button 224 that can be said to be a movement start button. Since the probe regeneration unit is located at a specially secured coordinate, it is not necessary to input the X and Y coordinate values by storing the coordinate values in advance in the computer, and the probe regeneration unit button By simply pressing 224, the stage movement is controlled so that the probe reproducing unit is positioned in the observation field of the ion beam or electron beam. An observation image of the sample or probe is displayed in the display area 225. Although not shown, an observation beam selection button is also provided, and an SEM observation image, an OM observation image, and an ion beam observation image can be displayed by operating the button. When the processing position is set, an observation image using an ion beam is preferable from the viewpoint of accuracy.

  Since the size of the opening of the probe reproducing unit is larger than the scanning range of the ion beam or the electron beam, if the background of the probe 226 in the image displayed in the display region 225 is the bottom of the probe reproducing unit, Since it cannot be displayed, it is displayed in black. On the other hand, when a part of the end of the opening is displayed on a part of the image display screen, the color is not black, and the position of the opening of the probe reproducing unit can be clearly understood.

  A plurality of processing patterns are registered in advance as processing shapes during probe regeneration. By selecting one of the registered pattern groups from the selection screen 227, the processed pattern shape is displayed as the line drawing pattern 229 on the small screen 228. If the operator determines that the processed pattern shape is acceptable, the operator presses the apply button 230 to display the processed pattern of the line drawing superimposed on the SIM screen. Each of these machining patterns stores not only the machining shape (ion beam irradiation area) but also the aperture and voltage applied to each lens when forming the ion beam, so it can be quickly and accurately obtained with the optimum ion beam that matches the machining shape. Can be reprocessed. In addition, a processing start button 231 and a processing stop button (not shown) are provided so that playback can be started and stopped at any time.

  If the operator can determine that the tip shape is deformed by normal use of the probe, such as bringing the probe into contact with the sample, and can be regenerated to the normal shape, the probe can be retracted, the stage moved, and the probe called by simply pressing the automatic button 232. , Contact with the opening, reproduction pattern setting, ion beam irradiation start, irradiation stop, probe evacuation, stage movement, and probe call are continuously performed. As a result, after the operator determines that the probe needs to be regenerated, the regenerated probe is displayed on the screen after a predetermined time has elapsed.

(7) Determination of probe regeneration The probe device of the present embodiment has a database of probe tip shapes. Should the probe device be reproduced by comparing the current shape of the probe mounted on the probe device with the database? You can decide whether to replace it. After determining whether to regenerate or replace, a message indicating that replay or replacement is to be performed is displayed on the display to alert the operator of the apparatus. After prompting the probe to regenerate, after the calculation processing unit decides that it is necessary to regenerate without considering the operator's judgment and the semi-automatic function that is left to the operator's decision whether to continue using or regenerate the current probe It has a fully automatic function that immediately shifts to the reproduction flow. It is up to the operator to choose between semi-automatic and fully automatic functions.

  When the probe replacement is determined, the probe calling function does not operate, and the probe device cannot be used for the work. After replacing the probe, it is reset and the probe can be operated as usual.

  By using the probe device of this embodiment, it is possible to regenerate a probe whose tip is damaged or deformed. Confirm the operation of the circuit by connecting and disconnecting the wiring of the semiconductor device circuit using a micro sample preparation device that extracts a TEM or STEM sample from a mother sample such as a wafer or a chip, or multiple independently driven probes. The present invention can be applied to a wiring correction device that can be used, and a MEMS (micro electro mechanical system) assembly device that forms, conveys, and assembles micro parts in a vacuum sample chamber.

DESCRIPTION OF SYMBOLS 1 Ion beam column 2 Electron beam column 3 Vacuum sample chamber 4 Sample stage 5, 31, 210, 226 Probe 6 Probe drive part 7, 51 Probe reproduction part 8 Detector 9 Display 10 Calculation processing part 11 Sample 12 Electron beam 13, 35 Ion beam 32 Bent tip 34 Sample stage 36, 42B Sputtered particles 36A, 38, 55 Sputtered particle deposition part 37 Irradiation mark 41 Ion beam 43 Tube part 44 Opening 52, 52A, 52B Opening 53 Bottom part 54 Side part 56 Lid 57 Groove 61, 64 Probe 62 Normal probe tip 63 Broken probe tip 65 Focused ion beam scanning region 66 Stage 100 Probe device 101 First process 102 Second process 103 Third process 104 Fourth process 105 First Step 5 in Step 6 Step 6 in Step 107 Step 7 in Step 7 Eighth step 109 Ninth step 110 Tenth step 111 End 112 Start 201 Display screen 202 Image display sheet 203 Image display unit 204 Image selection button 205 Probe operation screen 206 Call button 207 Retraction button 208 Movement start button 209 Surface image 211 Pointer 212 Pattern on Sample 213 Rotation Angle Instruction Unit 214 Stop Button 221 Stage Operation Screen 222 Probe Reproduction Screen 223 Coordinate Input Unit 224 Probe Reproduction Unit Button 225 Display Area 227 Selection Screen 228 Small Screen 229 Line Drawing Pattern 230 Apply Button 231 Start Processing Button 232 Automatic button

Claims (22)

A vacuum sample chamber;
A sample stage that is placed in a vacuum sample chamber and on which a sample can be placed;
A probe control device capable of driving a probe disposed in a vacuum sample chamber;
An ion beam irradiation apparatus capable of irradiating an ion beam;
A secondary particle detector capable of detecting secondary particles generated by ion beam irradiation;
An arithmetic unit for processing the signal from the secondary particle detector;
In a probe device having a display capable of displaying an image of an ion beam irradiation region imaged by an arithmetic device,
An apparatus having a probe reproducing unit in the vacuum sample chamber for processing the probe by irradiating the probe with an ion beam. The probe device according to claim 1,
An apparatus characterized in that the probe reproducing unit is provided on a sample stage, and the probe stage can be moved by moving the sample stage to an ion beam irradiation region. The probe device according to claim 2, wherein
An apparatus characterized in that the probe reproducing unit is detachable from a sample stage. The probe device according to claim 1,
An apparatus characterized in that the probe reproducing unit can be driven independently of the sample stage, and the probe reproducing unit can be moved to an ion beam irradiation region without moving the sample stage to process the probe. The probe device according to claim 1,
The probe reproducing unit has a concave shape having an opening on the upstream side of the ion beam and a bottom on the downstream side of the ion beam. The probe device according to claim 5, wherein
The apparatus according to claim 1, wherein the bottom of the probe reproducing unit is located at a position deeper than the longest side or the longest diameter of the opening. The probe device according to claim 1,
The probe reproducing unit has a concave shape having a first opening into which at least the tip of the probe can be inserted, a second opening through which the ion beam can pass, and a bottom on the downstream side of the ion beam. . The probe device according to claim 7, wherein
The probe reproducing unit has a shape in which the area of the bottom is larger than that of the opening and the concave shape is widened. The probe device according to claim 1,
An apparatus comprising an electron beam irradiation apparatus that irradiates an electron beam. The probe device according to claim 1,
An apparatus characterized in that a portion in contact with the vacuum in the vacuum sample chamber in the probe reproducing unit is formed of silicon.
The probe device according to claim 1,
An apparatus wherein the ion beam is a focused ion beam. The probe device according to claim 1,
An apparatus wherein the ion beam is a projected ion beam. The probe device according to claim 1,
The probe device has a mechanism capable of rotating the probe about the probe axis,
The computing device compares the probe side allowable shape registered in advance with the computing device and the probe side shape, and if the probe side shape deviates from the probe allowable side shape, the probe is processed into a pre-registered probe side reference shape. A device characterized by that. The probe device according to claim 1,
The arithmetic unit periodically observes the probe, and compares it with a pre-registered probe shape to be regenerated,
When the probe shape deviates from the probe shape to be regenerated, the apparatus regenerates the probe into a regenerated probe shape registered in advance. The probe device according to claim 1,
When the arithmetic unit observes the probe and compares it with the pre-registered allowable range of the reference probe, and the probe size is outside the registered allowable range of the probe, the probe is converted into a pre-registered reproduction probe shape. A device characterized by reprocessing. The probe device according to claim 1,
When the arithmetic unit periodically observes the probe and the probe shape deviates from the probe shape to be reproduced as compared with the probe shape to be reproduced in advance, a display prompting replacement or regeneration of the probe is displayed. A device characterized by being displayed. The probe device according to claim 1,
When the control device observes the probe and compares the preliminarily registered reference probe allowable dimension range with the probe dimension that is outside the registered probe allowable dimension range, a display prompting the replacement or regeneration of the probe Is displayed on a display. A method for regenerating a probe operable in a vacuum sample chamber,
By controlling the arithmetic unit, move the probe to be regenerated to the ion beam irradiation area,
By controlling the arithmetic unit, a probe reproducing unit is arranged at a position downstream of the ion beam with respect to the probe to be reproduced,
A method of irradiating a probe with an ion beam from an ion beam device under the control of an arithmetic unit. A method for regenerating a probe operable in a vacuum sample chamber,
An image of the probe playback unit is displayed on the display by the arithmetic unit,
An image of the probe to be reproduced by the arithmetic device is displayed on the display,
Set the ion beam irradiation area in the arithmetic unit so that the predetermined probe shape remains,
A method of irradiating an ion beam from an ion beam device under the control of an arithmetic device based on the setting. A method for regenerating a probe operable in a vacuum sample chamber,
The ion beam irradiation area is stored in advance in the arithmetic unit,
The ion beam irradiation area is displayed on the display so that it overlaps the image of the probe to be reproduced,
A method of irradiating an ion beam from an ion beam device in accordance with an ion beam irradiation region under the control of an arithmetic unit. The probe regeneration method according to claim 18,
The ion beam is a focused ion beam, and the ion beam irradiation region is a scanning region of the focused ion beam. The probe regeneration method according to claim 18,
The ion beam is a projection ion beam, and the ion beam irradiation region is a reduced shape of an aperture mask that forms the projection ion beam.

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