JP2010147069A - Method of manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a technology for suppressing damages to an already formed movable part, in forming the movable part after formation of an electrode and then removing a protective film protecting the electrode. <P>SOLUTION: In a method of manufacturing a semiconductor device in which a fixed part fixed to a base layer 14 immovably and the movable part movable relative to the base layer 14 are formed in a semiconductor layer 10 disposed above the base layer 14, the semiconductor layer removing step of removing the semiconductor layer 10 except in regions forming the fixed part and the movable part is performed, the intermediate layer removing step of removing an insulator layer 12 (an intermediate layer) positioned corresponding to the removed semiconductor layer 10 and the insulator layer 12 positioned between the movable part region and the base layer 14 is performed. The resist charging step of charging a resist P1 into a space formed in the semiconductor layer 10 at the semiconductor layer removing process is performed, and then the protective film 7 covering the electrode 80 and the resist P1 are removed. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a semiconductor device in which a fixed portion fixed so as not to move relative to the base layer and a movable portion movable relative to the base layer are formed in the semiconductor layer disposed above the base layer. It relates to the manufacturing method.

  As this type of semiconductor device, for example, a MEMS (Micro Electro Mechanical Systems) sensor is known. A MEMS sensor 100 illustrated in FIG. 15 includes a base layer 114 and a semiconductor layer 110 disposed above the base layer 114. In the semiconductor layer 110, a fixed portion 182 that is fixed so as not to move with respect to the base layer 114 and a movable portion 131 that can move with respect to the base layer 114 are formed. The fixing part 182 is fixed to the base layer 114 via the insulating layer 112. An electrode 180 is formed on the surface of the fixed portion 182. A space is formed between the movable portion 131 and the base layer 114. The movable part 131 is connected to the fixed part 182 in a cross section (not shown). The MEMS sensor 100 is used for detecting mechanical quantities such as acceleration and angular velocity, for example. That is, when the acceleration acts on the MEMS sensor 100, the relative position of the movable part 131 with respect to the base layer 114 is displaced. By detecting a change in capacitance due to this via the electrode 180, acceleration is detected.

  Patent Document 1 discloses a method for manufacturing the MEMS sensor 100. In the manufacturing method of Patent Document 1, first, the electrode 180 is formed on the surface of the region of the surface of the semiconductor layer 110 that becomes the fixing portion 182. Next, the electrode 180 is covered with a protective film such as SiN. Next, the semiconductor layer 110 other than the region to be the fixed portion 182 and the movable portion 131 is removed by etching. After that, the insulating layer 112 at a position corresponding to the removed semiconductor layer 110 and the insulating layer 112 between the region to be the movable portion 131 and the base layer 114 are removed. As a result, the movable part 131 becomes movable (lifted) with respect to the base layer 114. Next, the protective film covering the electrode 180 is removed. By covering the electrode 180 with a protective film before removing the semiconductor layer 110 and the insulating layer 112, damage to the electrode 180 due to etching or the like is prevented.

JP 2007-283470 A

The protective film covering the electrode 180 is removed by anisotropic etching such as reactive ion etching (RIE), for example. In reactive ion etching, the MEMS sensor 100 is placed in plasma. Then, the already formed movable part 131 is charged in the plasma, and the movable parts 131 or the movable part 131 and the base layer 114 may collide with each other. Thereby, the movable part 131 may be damaged.
The protective film may be removed by isotropic etching such as chemical dry etching (CDE). In this case, the already formed movable part 131 may be removed by etching.

If the electrode 180 is formed after the movable portion 131 is formed, both of the damage to the movable portion 131 and the electrode 180 can be avoided. However, in order to form the electrode 180 on the surface of the semiconductor layer 110, usually, a metal film is first formed over the entire surface, and then the electrode 180 is formed by removing the metal film in unnecessary regions. After the movable portion 131 is formed, a part of the semiconductor layer 110 is removed, and a space is provided between the movable portion 131 and the base layer 114, so that the electrode 180 is formed by a conventional method. It is difficult to do.
The present invention provides a technique for suppressing damage to an already formed movable part when the movable part is formed after the electrode is formed and then the protective film for protecting the electrode is removed.

The manufacturing method disclosed in this specification includes a fixed portion fixed to a semiconductor layer disposed above the base layer so as not to move with respect to the base layer, and a movable portion movable with respect to the base layer. This is a method for manufacturing a semiconductor device in which is formed. In this manufacturing method, the electrode forming step, the protective film covering step, the semiconductor layer removing step, the intermediate layer removing step, the resist filling step, the protective film removing step, and the resist removing step are performed in this order. In the electrode formation step, an electrode is formed on the surface of the region to be a fixed portion of the surface of the semiconductor layer with the intermediate layer disposed between the base layer and the semiconductor layer. In the protective film coating step, the electrode is coated with a protective film. In the semiconductor layer removing step, the semiconductor layer other than the region that becomes the fixed portion and the movable portion is removed. In the intermediate layer removing step, the intermediate layer at a position corresponding to the semiconductor layer removed in the semiconductor layer removing step and the intermediate layer between the region serving as the movable portion and the base layer are removed. In the resist filling step, the resist is filled into the space formed in the semiconductor layer by the semiconductor layer removing step. In the protective film removing step, the protective film covering the electrode is removed. In the resist removal step, the filled resist is removed.
Note that in the resist filling step, the entire space formed in the semiconductor layer by the semiconductor layer removing step may not be filled with the resist. In addition, after the resist filling step, the movable parts or the movable parts and other members (base layer, intermediate layer, etc.) are temporarily fixed via the resist, and at least the side surfaces of the movable parts are made of resist. It is preferably coated. The side surface of the movable part is closely related to the performance of the semiconductor device.

  The manufacturing method described above is characterized in that the resist is filled in the space formed in the semiconductor layer in the resist filling step before the protective film removing step. Thereby, the surface of a movable part can be protected with a resist. Alternatively, the movable parts or the movable part and other members (such as a base layer and an intermediate layer) can be temporarily fixed via a resist. Therefore, when the protective film of the electrode is removed by using, for example, chemical dry etching in the protective film removing step, the surface of the movable part protected by the resist cannot be shaved. In the protective film removing step, for example, when the protective film of the electrode is removed using reactive ion etching, the movable portion is prevented from being charged and colliding with any member. Furthermore, the filled resist can be easily removed without damaging the movable part and the fixed part. Thereby, when removing the protective film which protects an electrode, it can suppress that a movable part is damaged.

  The semiconductor device manufacturing method described above may further include a step of preparing an SOI (Silicon on Insulator) substrate. In this case, the “intermediate layer” between the base layer and the semiconductor layer is an insulating layer. By using an SOI substrate, a semiconductor device can be easily manufactured. In addition, the manufacturing method described above may further include a step of stacking the semiconductor layer on the intermediate layer disposed on the base layer. In this case, in the electrode formation step, an electrode is formed on the stacked semiconductor layers. According to this method, the thickness of the semiconductor layer can be set to an arbitrary thickness.

  According to the manufacturing method disclosed in this specification, it is possible to suppress damage to the already formed movable portion when removing the protective film that protects the electrode formed on the surface of the semiconductor layer.

The features of the technology disclosed in this specification will be summarized.
(1) The semiconductor device is a MEMS sensor.
(2) As a resist filling the space, a novolac resist, polyimide, or the like is used.

FIG. 1 shows a plan view of the main part of the semiconductor device 1 of this embodiment. 2 is a cross-sectional view taken along line II-II in FIG.
The semiconductor device 1 functions as an acceleration sensor. The semiconductor device 1 includes a detection region 5 disposed in the upper part of FIG. 1 and a vibration force applying region 3 disposed in the lower part of FIG.
First, the configuration of the detection area 5 will be described. The detection region 5 is disposed in the center with a pair of electrodes 80, an electrode pedestal portion 82 on which each electrode 80 is formed, two arm portions 20 wired from each electrode pedestal portion 82. And the comb electrode portion 30 formed between the first lattice portion 40 and each arm portion 20.

The electrodes 80 are formed at both left and right ends in FIG. The electrode 80 is formed on the surface of the electrode pedestal 82 by a metal such as aluminum. As shown in FIG. 2, the insulator layer 12 is disposed between the electrode base 82 and the base layer 14. The electrode pedestal portion 82 is formed by the semiconductor layer 10.
The arm portion 20 extends from each electrode pedestal portion 82 toward the center. The arm part 20 is fixed to the base layer 14 via the insulator layer 12.
In the first lattice portion 40, a large number of holes are formed in plan view. A space is formed between the first lattice unit 40 and the base layer 14, and the first lattice unit 40 is movable with respect to the base layer 14. The first lattice unit 40 is connected to a second lattice unit 42 in a vibration force applying region 3 described later by a beam 52.

  The comb electrode part 30 is formed on both the left and right sides of the first lattice part 40 in FIG. The comb electrode part 30 includes arm part side comb teeth 32 connected to the arm part 20 and lattice part side comb teeth 31 connected to the first lattice part 40. A plurality of teeth constituting the arm portion side comb teeth 32 are formed at equal intervals on the arm portion 20, and each tooth extends from the support portion 21 of the arm portion 20 toward the first lattice portion 40 side. . A predetermined interval is formed between the arm side comb teeth 32 and the first lattice part 40, and they are not in contact with each other. A plurality of teeth constituting the lattice portion side comb teeth 31 are arranged at equal intervals on the first lattice portion 40, and each tooth extends from the first lattice portion 40 toward the arm portion 20 side. A predetermined interval is formed between the lattice portion side comb teeth 31 and the arm portion 20, and they are not in contact with each other. The teeth of the arm portion side comb teeth 32 and the lattice portion side comb teeth 31 are alternately combined with a gap therebetween. As shown in FIG. 2, a space is formed between the lattice portion side comb teeth 31 and the base layer 14, and the lattice portion side comb teeth 31 are movable with respect to the base layer 14. Although not shown, a space is also formed between the arm portion side comb teeth 32 and the base layer 14, and the arm portion side comb teeth 32 are also movable with respect to the base layer 14. When acceleration is applied to the semiconductor device 1, the position of the lattice-side comb teeth 31 with respect to the arm-side comb teeth 32 changes.

Next, the configuration of the vibration force application region 3 will be described. The same components as those in the detection region 5 described above are denoted by the same reference numerals, and detailed description thereof is omitted.
The vibration force application region 3 is disposed in the center with a pair of electrodes 80, an electrode pedestal portion 82 on which each electrode 80 is formed, two arm portions 20 wired from each electrode pedestal portion 82, and the like. The second lattice portion 42, the two comb electrode portions 30 formed between the second lattice portion 42 and each arm portion 20, and the anchor portion 60 are provided.

Similarly to the first lattice portion 40 in the detection region 5, the second lattice portion 42 has a large number of holes when viewed in plan. A space is also formed between the second lattice portion 42 and the base layer 14, and the second lattice portion 42 can move with respect to the base layer 14. The second lattice part 42 is connected to the first lattice part 40 by a beam 52. A space is also formed between the beam 52 and the base layer 14, and the beam 52 is movable with respect to the base layer 14.
The second lattice portion 42 is connected to the support portion 61 of the anchor portion 60 by the beam 50. A space is also formed between the beam 50 and the base layer 14, and the beam 50 is movable with respect to the base layer 14. The anchor part 60 is fixed to the base layer 14 via the insulator layer 12.

  Accordingly, the first lattice portion 40, the lattice portion side comb teeth 31 formed in the first lattice portion 40, the beam 52, the second lattice portion 42, and the lattice portion formed in the second lattice portion 42. The side comb teeth 31 are connected to the support portion 61 of the anchor portion 60 via the beam 50.

  When detecting the acceleration with the semiconductor device 1, an alternating voltage is applied between the pair of electrodes 80 in the vibration force application region 3. As a result, a force is generated in the comb-teeth electrode portion 30 on the vibration force applying region 3 side, and the second lattice portion 42 vibrates left and right in FIG. The vibration force and vibration width of this vibration are determined by the rigidity of the beam 50 that connects the second lattice portion 42 and the anchor portion 60. The vibration is transmitted to the first lattice unit 40 in the detection region 5 through the beam 52. Thereby, the 1st grating | lattice part 40 also vibrates in the left-right direction of FIG. When acceleration occurs in the vertical direction in FIG. 1, the interval between the lattice-side comb teeth 31 and the arm-side comb teeth 32 of the comb-shaped electrode section 30 in the detection region 5 changes. Thereby, the electrostatic capacitance of the comb-tooth electrode part 30 in the detection region 5 changes. The amount of change in capacitance is detected through a pair of electrodes 80 in the detection region 5, and the magnitude of acceleration is calculated from the detected amount of change in capacitance.

A method for manufacturing the semiconductor device 1 will be described with reference to FIGS. 3 to 12 and FIG. 14 show a state in which each step has been performed with respect to the section taken along the line II-II in FIG.
First, as shown in FIG. 3, the SOI substrate 2 in which the insulator layer 12 is disposed between the base layer 14 and the semiconductor layer 10 is prepared. Silicon is used as a material for the base layer 14 and the semiconductor layer 10. Silicon oxide is used as the material of the insulator layer 12. The base layer 14 has a thickness of 625 μm, the insulator layer 12 has a thickness of 4.5 μm, and the semiconductor layer 10 has a thickness of 40 μm.

Next, as shown in FIG. 4, an aluminum film 8 is deposited on the entire surface of the semiconductor layer 10. The thickness of the aluminum film 8 is 1.0 μm.
Next, as shown in FIG. 5, a part of the aluminum film 8 in FIG. 4 is removed, and the electrode 80 in the detection region 5 and the vibration force applying region 3 is formed.

Next, as shown in FIG. 6, the electrode 80 is covered with a protective film 7. SiN is used as the material of the protective film 7. The thickness of the protective film 7 is 2.0 μm.
Next, as shown in FIG. 7, a mask M1 is applied to the entire surface side of the substrate 2, and then the mask M1 is patterned. Thereby, on the electrode 80 covered with the protective film 7, the region (movable portion forming region) for forming the movable portion (31, 32, 40, 42, 50, 52), and the fixed portion (20, 60, 82). The mask M1 on the region (fixed portion formation region) for forming) remains, and the mask M1 formed on the other regions is removed. In the region where the first lattice portion 40 and the second lattice portion 42 are formed (part of the movable portion formation region), the mask M1 is opened at a portion where a large number of holes (see FIG. 1) are formed.

Next, as shown in FIG. 8, the semiconductor layer 10 is etched from the opening of the mask M1 to the insulator layer 12. Thereby, in the semiconductor layer 10, the movable part (31, 32, 40, 42, 50, 52) and the fixed part (20, 60, 82) remain. FIG. 8 shows a state in which the lattice portion side comb teeth 31 and the electrode pedestal portion 82 remain.
Next, as shown in FIG. 9, the mask M1 is removed by ashing.

  Next, as shown in FIG. 10, the substrate 2 is treated with a hydrofluoric acid chemical solution to remove the exposed insulator layer 12. At this time, the insulator layer 12 is removed isotropically. Therefore, in addition to the exposed insulator layer 12, the insulator layer 12 remaining below the movable portion (31, 32, 40, 42, 50, 52) and the fixed portion (20, 60, 82) is also included. It is eroded by chemicals from the side. For example, in the lattice-side comb teeth 31 shown in FIG. 10, the insulator layer 12 remaining below the lattice-side comb teeth 31 is eroded and removed by the chemical solution from both the left and right sides in the figure. Since the lattice-side comb teeth 31 have a small width, all the insulator layers 12 below the lattice-side comb teeth 31 are removed. Similarly, since the arm-side comb teeth 32 and the beams 50 and 52 are also narrow in width, all the insulating layers 12 below them are removed. Since the first lattice portion 40 and the second lattice portion 42 are formed with a large number of holes, the insulator layer 12 around each hole is removed by the chemical solution introduced into each hole. Thereby, all the insulator layers 12 below the first grating part 40 and the second grating part 42 are also removed. As a result, the comb electrode part 30, the beams 50, 52, the first grating part 40, and the second grating part 42 are separated from the base layer 14 and are movable parts (31, 32, 40, 42, 50, 52). Become.

  On the other hand, the electrode pedestal portion 82, the arm portion 20, and the anchor portion 60 occupy a larger area when viewed in plan than the area of the side surface. For this reason, although the insulator layer 12 below these regions is also eroded from the side, these regions are not separated from the base layer 14. Therefore, the arm portion 20, the anchor portion 60, and the electrode pedestal portion 82 are fixed to the base layer 14 via the insulator layer 12.

  Next, as shown in FIG. 11, a resist P <b> 1 is applied to the entire top surface of the substrate 2. The resist P1 is applied by spin coating. As a result, the lateral space of the remaining semiconductor layer 10 is filled with the resist P1. At this time, the space on the side surface of the movable portion (31, 32, 40, 42, 50, 52) may be filled with the resist P1, and the movable portion (31, 32, 40, 42, 50, 52) may be used. ) (Between the base layer 14) is not necessarily completely filled with the resist P1. The filled resist P1 is solidified.

  Next, as shown in FIG. 12, the resist P1 formed on the surface side is removed. Thus, the surface S1 of the movable part (31, 32, 40, 42, 50, 52), the protective film 7 protecting the electrode 80, and the fixed part (20, 60, 82) other than the electrode base part 82. The surface of is exposed. FIG. 13 is a top view of this state, and the resist P1 and the protective film 7 are hatched for easy understanding. In addition, although not clearly shown in FIG. 13, the resist P <b> 1 is also filled in a large number of holes in the first lattice portion 40 and the second lattice portion 42.

  Next, as shown in FIG. 14, the protective film 7 protecting the electrode 80 by etching is removed. The etching for removing the protective film 7 may be performed by chemical dry etching or reactive ion etching. Next, the resist P1 is removed by ashing.

  When the semiconductor device 1 is viewed in plan, the space provided in the movable part (31, 32, 40, 42, 50, 52) or the fixed part (20, 60, 82) of the semiconductor layer 10 may have a large area. There are some narrow places. For example, when the protective film 7 is removed by using chemical dry etching, the side surfaces and surfaces of the already formed movable parts (31, 32, 40, 42, 50, 52) and fixed parts (20, 60, 82) are also removed. You can sharpen. Since the surface can be cut almost uniformly, the dimensions of the movable part (31, 32, 40, 42, 50, 52) and the fixed part (20, 60, 82) may be determined in anticipation of the amount to be cut. However, the amount by which the side surface can be cut depends on the size of the space where the side surface is exposed, so it is difficult to predict the amount by which the side surface can be cut. When the side surface S2 of the comb teeth (31, 32) of the movable portion (31, 32, 40, 42, 50, 52) is scraped when the protective film 7 is removed, the adjacent comb teeth (31, 32, The capacitance value detected in the comb electrode portion 30 changes due to the change in the interval 32). As a result, the accuracy of acceleration detection is reduced.

  In the manufacturing method of the semiconductor device 1 of the present embodiment, the side surfaces of the movable parts (31, 32, 40, 42, 50, 52) are exposed prior to removing the protective film 7 covering the electrodes 80. The space is filled with resist P1. Thereby, the side surface S2 of the comb teeth (31, 32) of the comb-tooth electrode portion 30 is protected by the resist P1. Therefore, it is possible to prevent the side surface S2 from being damaged when the protective film 7 is removed. Since the side surface S2 of the comb teeth (31, 32) of the comb-teeth electrode portion 30 is suppressed from being damaged, acceleration detection accuracy can be improved.

Further, when the side surfaces of the beams 50 and 52 of the movable parts (31, 32, 40, 42, 50, and 52) are cut, the width (rigidity) of the beams 50 and 52 changes. As a result, the vibration force and vibration frequency of the second lattice part 42 connected to the anchor part 60 via the beam 50 change. Further, the vibration force and vibration frequency transmitted to the first lattice unit 40 that transmits vibration via the beam 52 are changed. In addition, when the side surfaces of the first lattice unit 40 and the second lattice unit 42 are shaved, the weights of the first lattice unit 40 and the second lattice unit 42 change. The first lattice portion 40 and the second lattice portion 42 serve as weights of the lattice portion side comb teeth 31 that are displaced when acceleration is applied to the semiconductor device 1. When the weight changes, the amount of displacement of the lattice-side comb teeth 31 changes.
In the method of manufacturing the semiconductor device 1 according to the present embodiment, when the protective film 7 is removed, the space in which the side surfaces of the movable parts (31, 32, 40, 42, 50, 52) are exposed is filled with the resist P1. Therefore, the side surfaces of the beams 50 and 52, the side surfaces of the first lattice unit 40, and the side surfaces of the second lattice unit 42 are protected by the resist P1, and are not easily damaged. Therefore, the acceleration detection accuracy can be improved.

Further, by filling the space where the side surface of the movable part (31, 32, 40, 42, 50, 52) is exposed with the resist P1, the movable part (31, 32, 40, 42, 50, 52) and The relative position of the base layer 14 is temporarily fixed. For this reason, for example, even when the protective film 7 is removed using reactive ion etching, the movable part (31, 32, 40, 42, 50, 52) is charged and collides with any member. It has become difficult. Further, the filled resist P1 can be easily removed without damaging the movable parts (31, 32, 40, 42, 50, 52).
According to the manufacturing method of the present embodiment, even when the protective film 7 is removed using reactive ion etching, the movable parts (31, 32, 40, 42, 50, 52) are prevented from being damaged. Can do.

  In the present embodiment, the case where the semiconductor device 1 is an acceleration sensor has been described. In the manufacturing method of this embodiment, the semiconductor layer is disposed on the base layer, and a movable portion is formed in the semiconductor layer by providing a space between at least a part of the base layer and the semiconductor layer. The present invention can also be applied to a method for manufacturing a semiconductor device.

In this embodiment, the case where the semiconductor device 1 is formed using an SOI substrate has been described. However, the semiconductor device 1 can be manufactured without using the SOI substrate. For example, the semiconductor device 1 can be manufactured by performing the following steps.
That is, a sacrificial layer film is deposited on the semiconductor wafer, and a semiconductor layer is deposited on the sacrificial layer film. Next, an electrode is formed on the surface of a region to be a fixed portion of the deposited semiconductor layer. Thereafter, similarly to the above-described embodiment, a protective film coating process, a semiconductor layer removing process, a sacrificial layer film removing process, a resist filling process, a protective film removing process, and a resist removing process are performed.
Alternatively, the following steps may be performed.
That is, an electrode is formed on a region serving as a fixed portion on the surface of the semiconductor wafer, and a protective film is formed on the electrode. Next, a sacrificial layer film is deposited on the semiconductor wafer only in a region where the movable part is formed, and a semiconductor layer is deposited only on the deposited sacrificial layer film. Next, the sacrificial layer film is removed. Thereafter, the protective film removing step and the resist removing step are performed as in the above-described embodiment.

Specific examples of the present invention have been described in detail above, but these are merely examples and do not limit the scope of the claims. The technology described in the claims includes various modifications and changes of the specific examples illustrated above.
The technical elements described in this specification or the drawings exhibit technical usefulness alone or in various combinations, and are not limited to the combinations described in the claims at the time of filing. In addition, the technology exemplified in this specification or the drawings can achieve a plurality of objects at the same time, and has technical usefulness by achieving one of the objects.

It is the figure which planarly viewed the semiconductor device 1 provided with the movable part (31, 32, 40, 42, 50, 52). It is the II-II sectional view taken on the line of FIG. 1, and shows the principal part cross section of the area | region in which the lattice part side comb-tooth 31 is formed. A method for manufacturing the semiconductor device 1 will be described. A method for manufacturing the semiconductor device 1 will be described. A method for manufacturing the semiconductor device 1 will be described. A method for manufacturing the semiconductor device 1 will be described. A method for manufacturing the semiconductor device 1 will be described. A method for manufacturing the semiconductor device 1 will be described. A method for manufacturing the semiconductor device 1 will be described. A method for manufacturing the semiconductor device 1 will be described. A method for manufacturing the semiconductor device 1 will be described. A method for manufacturing the semiconductor device 1 will be described. A method for manufacturing the semiconductor device 1 is shown. A method for manufacturing the semiconductor device 1 will be described. The cross section of the principal part of the conventional semiconductor device 100 is shown.

Explanation of symbols

1: Semiconductor device 2: Substrate 3: Vibration force application region 5: Detection region 7: Protection film 8: Aluminum film 10: Semiconductor layer 12: Insulator layer 14: Base layer 20: Arm portion 30: Comb electrode portion 31: Lattice portion side comb teeth 32: Arm portion side comb teeth 40: First lattice portion 42: Second lattice portion 50, 52: Beam 60: Anchor portion 80: Electrode 82: Electrode base portion M1: Mask P1: Resist S2: Side surface

Claims (3)

A method for manufacturing a semiconductor device, wherein a semiconductor layer disposed above a base layer is formed with a fixed portion fixed so as not to move relative to the base layer and a movable portion movable relative to the base layer. Yes,
An electrode forming step of forming an electrode on a surface of a region to be a fixed portion of the surface of the semiconductor layer in a state where the intermediate layer is disposed between the base layer and the semiconductor layer;
A protective film coating step of coating the electrode with a protective film after the electrode forming step;
A semiconductor layer removing step for removing the semiconductor layer other than the region serving as the fixed portion and the movable portion after the protective film covering step; and an intermediate layer at a position corresponding to the semiconductor layer removed in the semiconductor layer removing step after the semiconductor layer removing step; An intermediate layer removing step of removing the region to be the movable portion and the intermediate layer between the base layer;
After the intermediate layer removing step, a resist filling step of filling the resist in the space formed in the semiconductor layer by the semiconductor layer removing step;
After the resist filling process, a protective film removing process for removing the protective film covering the electrode;
A method for manufacturing a semiconductor device, comprising a resist removal step of removing a filled resist after a protective film removal step. A step of preparing an SOI substrate;
The method for manufacturing a semiconductor device according to claim 1, wherein an electrode is formed on the SOI substrate in the electrode forming step. And further comprising a step of laminating a semiconductor layer on an intermediate layer disposed on the base layer,
The method for manufacturing a semiconductor device according to claim 1, wherein in the electrode forming step, an electrode is formed on the stacked semiconductor layers.

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