JP2010146514A - Information processor and neural network circuit using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an information processor storing synapse bond strength as an analog quantity without increasing an occupied area on an LSI chip by indicating the synapse bond strength using a resistance value of a resistance variable memory element. <P>SOLUTION: The information processor 100 includes at least one synapse circuit 102. The synapse circuit 102 has the resistance variable memory element 24 reversibly varied by the application of voltage pulses, and an STDP (spike-timing dependent synaptic plasticity) section 25 carrying out operation using a function that indicates a preset nonlinear voltage waveform according to a lag of input timing between two spike pulses input at different timing. The STDP section 25 carries out operation to the lag of the input timing when the two spike pulses are input, and sets a voltage pulse applied to the resistance variable memory element 24 based on the operation result. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an information processing apparatus using a resistance change type memory element capable of storing information by a change in electrical resistance caused by electrical stress application, and more particularly to an information processing technique suitable for a neural network circuit.

  Currently, computers are making great progress and are being used in various situations around the world. However, these Neumann computers are very poor at processing (recognition and understanding of scenes in real time) that can be easily performed by humans due to the characteristics of the processing method itself.

  In contrast, a neural network, which is an arithmetic processing model that imitates the information processing mode of the brain, has been studied. As a model of the neurons that make up the neural network, the multiplication value obtained by weighting the output values of other units (neurons) with the synapse connection strength is input to the unit corresponding to the neuron, and the input value is further nonlinear. In general, an output value is a deformed value.

  Since about 2000, a model that directly mimics a neural circuit of a living body and directly handles spike pulses has been actively studied. The spike pulse is a pulse having a very short pulse width and expressing information only by its time timing. For example, in Non-Patent Document 1, the conventional neural network model handles analog values as time averages or collective averages of spike pulses, but higher performance can be obtained by using a model that directly handles spike pulses. It has been suggested that

  By the way, since the neural network is a massively parallel / distributed information processing model, it is very inefficient when executed on a Neumann computer that is a sequential processing method. Therefore, when a neural network is put into practical use, it is essential to make an integrated circuit as dedicated hardware.

  In the case of this integrated circuit, there is an advantage that it is easier to design and systematically handle binary pulses than directly handle analog values. That is, it is resistant to noise and the like and has good consistency with the digital system. This is because full-scale AD conversion is not necessary because the pulse itself is an intermediate information representation between analog and digital.

  Here, FIG. 10 shows the simplest spike type neuron model (spiking neuron model) called an integral firing type. The operation of this integral ignition model will be briefly described with reference to FIG.

  When a spike pulse is input from an external or other neuron, a unimodal voltage change appears at the junction (synapse) between neurons. This is called a post-synaptic potential (hereinafter abbreviated as “PSP”). The direction of the voltage change of the PSP is positive or negative according to the sign (positive or negative) of the synaptic connection. Positive binding is called excitatory synapse and negative binding is called inhibitory synapse. The shape of PSP (EPSP, IPSP) is the same, and the height of the mountain is proportional to the synaptic connection strength.

  One neuron has many synapse connections, and the sum of each PSP from these many synapse connections becomes the internal potential Vn of the neuron. When the internal potential Vn exceeds a predetermined threshold value Vth, the neuron outputs an output in which is a spike pulse, and resets the internal potential Vn. This is called “firing” of neurons. After the firing of a neuron, a period called a refractory period occurs during which the neuron cannot fire for a certain period. This refractory period is realized by temporarily increasing the threshold value Vth for firing. The output in, which is a spike pulse, is output from a neuron, and is input to another neuron after a certain delay time.

  Spike-Timing Dependent Synaptic Plasticity (hereinafter abbreviated as “STDP”) has attracted attention and is actively studied as a learning method using such spike timing. FIG. 11 shows an explanatory diagram for explaining this STDP.

As shown in FIG. 11A, in this STDP, the synapse connection strength ΔW _ij changes as a function of the time difference between the timing t _{i of} the spike input to the neuron and the timing t _j of the firing spike of the neuron. Is. This STDP is roughly divided into two types, and a symmetric time window (symmetric type) shown in FIG. 11 (b), an asymmetric time window (asymmetric type) shown in FIG. 11 (c), and There is.

In the symmetric STDP of FIG. 11B, the change in the synapse coupling strength ΔW _ij is determined by a function of only the time difference t _j −t _i between the two spikes, and has a function shape as shown in FIG.

On the other hand, in the asymmetric STDP of FIG. 11C, the change in the synapse coupling strength ΔW _ij depends on the time order of both spikes in addition to the time difference t _j -t _i between the two spikes.

  As a technique for realizing such STDP, for example, Patent Document 1 discloses a method of sampling a nonlinear voltage waveform. This realizes a nonlinear conversion function by generating a nonlinear voltage waveform with the first spike pulse and sampling it with the second spike pulse.

  A specific method for realizing such an STDP circuit is disclosed in Non-Patent Document 2, for example.

  However, in the conventional neural network circuit including the STDP function, an element suitable for storing the synaptic coupling strength in the synaptic coupling as an analog quantity has not been found so far.

  For example, in the method of storing in the capacitor disclosed in Non-Patent Document 2, only a short time on the order of seconds can be stored, and the exclusive area on the LSI chip becomes extremely large, making it difficult to achieve high integration. was there.

  In addition, there is a method using a non-volatile semiconductor memory such as a flash memory. In this case, the floating gate element used for the flash memory or the like has a non-linear write characteristic and has hysteresis. Additional writing is difficult.

For this reason, for example, a special structure disclosed in Patent Document 2 and a complicated circuit disclosed in Non-Patent Document 3, for example, are required, and as a result, there is still a problem that the area occupied by the circuit increases.
JP 2007-241684 A (published on September 20, 2007) Japanese Patent Laid-Open No. 5-335656 (published on December 17, 1993) W. Maass, “Networks of Spiking Neurons: The Third Generation of Neural Network Models,” Neural Networks, vol. 10, no. 9, pp. 1659-1671, 1997. Hideki Tanaka, Takashi Morie, Kazuyuki Aihara, Evaluation of CMOS Spiking Neural Network LSI with STDP, IEICE Neurocomputing Society, NC2007-61, Vol. 107, No. 328, pp. 37-42, 2007 November 18, S. Kinoshita, T. Morie, M. Nagata and A. Iwata, A PWM Analog Memory Programming Circuit for Floating-Gate MOSFETs with 75us Programming Time and 11b Updating Resolution, IEEE J. Solid-State Circuits, Vol. 36, No. 8, pp. 1286-1290, 2001. Liu, SQ et al. “Electric-pulse-induced reversible Resistance change effect in magnetoresistive films”, Applied Physics Letter, Vol. 76, pp. 2749-2751, 2000

  In view of the above problems, the object of the present invention is to express the synapse coupling strength of the synapse circuit using the resistance value of the resistance change type memory element, thereby increasing the synaptic coupling strength without increasing the exclusive area on the LSI chip. An information processing apparatus capable of storing an analog quantity and a neural network circuit using the information processing apparatus are provided.

  To achieve the above object, an information processing apparatus according to the present invention is an information processing apparatus including at least one synapse unit that receives a spike pulse and gives a weight value to the spike pulse to generate a weight signal. The synapse unit has a memory element having a resistance value that reversibly changes when a voltage pulse is applied, and a non-linear voltage waveform set in advance according to a shift in input timing between two spike pulses input at different timings. An arithmetic unit that executes an arithmetic operation using a function that represents the memory element, the storage element having the resistance value set as an analog amount representing a weight value given to the spike pulse, When a spike pulse is input, the input timing shift between the two spike pulses using the function Against performs operations, and sets the voltage pulse to be applied to the storage element based on the result of the calculation.

  In the information processing apparatus described above, the weight value given to the spike pulse is expressed using a memory element having a resistance value that reversibly changes by application of the voltage pulse. By setting a voltage pulse to be applied to the storage element based on a calculation result using a function representing a preset non-linear voltage waveform in accordance with a shift in input timing between the two spike pulses, the two spike pulses are set. The weight value given to the spike pulse by the synapse can be changed in accordance with the shift in input timing.

  Here, in the information processing apparatus described above, it is important to use a physical characteristic of the storage element that reversibly changes its resistance value by applying a voltage pulse.

  That is, by setting the resistance value of the memory element that reversibly changes with the application of a voltage pulse as an analog quantity representing a weight value given to the spike pulse, the spike pulse can be obtained without requiring a complicated circuit configuration. Can be stably maintained over a long period of time. In addition, since the element area can be reduced as compared with the case where a capacitor is used as in the conventional case, the information processing apparatus can be highly integrated.

  Examples of the storage element include RRAM (Resistance RAM) and PCRAM (Phase Change RAM) described in Non-Patent Document 4. Such a storage element is expected to be applied as a next-generation non-volatile random access memory (NVRAM) capable of high-speed operation instead of a flash memory.

  When the first spike pulse and the second spike pulse are input in this order, the arithmetic unit generates a non-linear voltage waveform represented by the function based on the input timing of the first spike pulse. Preferably, the non-linear voltage waveform is sampled using the second spike pulse as a sampling pulse, and a voltage pulse having a voltage value in the sampled waveform is applied to the storage element.

  In this case, it is possible to set the voltage pulse to be applied to the memory element using the input sampling pulse as it is, so there is no need to add a new circuit such as a pulse generation circuit, and the information processing apparatus can be realized at a lower cost. can do.

  Adding a plurality of weighting signals generated by each of the plurality of synapse units to generate a weighted addition signal; and each of the plurality of neuron units includes a weighted addition signal generated by itself. A new spike pulse is generated when the level exceeds a predetermined threshold value to generate a spike pulse, and each of the plurality of synapse units generates a new spike pulse by the neuron unit. In the pulse generation stop period in which the neuron unit stops generating a new spike pulse regardless of whether or not a spike pulse is input to the synapse unit, which comes after the voltage pulse application to the storage element by the arithmetic unit Is preferably performed.

  In this case, since the resistance value of the memory element can change only in the pulse stop period in which the neuron unit stops generating the spike pulse, the neuron unit does not inhibit the generation of a new spike pulse without disturbing the generation of the memory element. The weight value can be reliably updated by changing the resistance value.

  The storage element has a threshold value of a voltage value of a voltage pulse required to change its resistance value, and the storage element is less than the threshold value when a weighting signal is generated by the synapse unit. On the other hand, when the weight value is updated by changing its own resistance value, a voltage pulse having a voltage value equal to or higher than the threshold value is preferably applied.

  In this case, since the generation of the weighting signal by the synapse unit and the update of the weight value due to the change in the resistance value of the storage element can be performed in a reliable manner, the update of the weight value due to the change in the resistance value of the storage element can be reliably performed. Can do.

  Preferably, each of the plurality of synapse units further includes a switching element disposed between the arithmetic unit and the storage element, and the switching element is closed only during the pulse generation stop period.

  In this case, since the calculation unit and the storage element are connected only by the switching element during the pulse generation stop period, the weight value can be updated more reliably due to the change in the resistance value of the storage element.

  A neural network circuit according to the present invention uses the information processing apparatus as a neuron element.

  In the above neural network circuit, a neural network circuit including the above information processing apparatus is realized.

  As described above, in the information processing apparatus of the present invention, the synapse unit includes a storage element having a resistance value that reversibly changes by application of a voltage pulse, and an input timing between two spike pulses input at different timings. And a calculation unit that executes a calculation using a function that represents a nonlinear voltage waveform that is set in advance according to the deviation of the shift, and the storage element is set as an analog quantity that represents a weight value given to the spike pulse When the two spike pulses are input, the calculation unit has the resistance value and executes a calculation for a shift in input timing between the two spike pulses using the function, and based on the result of the calculation The voltage pulse to be applied to the storage element is set.

  Therefore, by expressing the synapse coupling strength of the synapse circuit using the resistance value of the resistance change type memory element, the synaptic coupling strength can be stored as an analog amount without increasing the exclusive area on the LSI chip. There is an effect.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings used for the following description, the same portions are denoted by the same reference numerals. Their names and functions are also the same. Therefore, detailed description thereof will not be repeated.

(Embodiment 1)
The information processing apparatus according to the first embodiment of the present invention uses an integral firing type neuron model, which is the most basic model among the spinking neuron models. FIG. 1 is a block diagram showing the configuration of the information processing apparatus according to Embodiment 1 of the present invention.

  As shown in FIG. 1, the information processing apparatus 100 according to the present embodiment includes a plurality of neuron circuits (neuron units) 101 and a plurality of synapse circuits (synapse units) 102. In FIG. 1, only one neuron circuit 101 and one synapse circuit 102 are shown for ease of illustration, but actually, a plurality of neuron circuits 101 pass through a plurality of synapse circuits 102. Are connected to each other.

When the neuron circuit 101 receives spikes from other neuron circuits (not shown) via the synapse circuit 102, the neuron circuit 101 generates a PSP (post-synaptic potential) in its own internal potential U _i . This spike is given asynchronously from a plurality of other neuron circuits, and the internal potential U _i of the neuron circuit 101 is determined by the spatio-temporal addition of PSP by the plurality of spikes.

In addition, the synaptic connection between the neuron 101 and the synaptic circuit 102 has excitability and inhibitory property, and is expressed by a sign of synaptic connection strength. When the internal potential U _i of the neuron circuit 101 exceeds a predetermined threshold, the neuron circuit 101 ignites and generates a spike. At the same time, the neuron circuit 101 enters a refractory period of a certain period simultaneously with the generation of the spike, and the generated spike is given to another neuron circuit through a predetermined propagation delay time.

Specifically, as shown in FIG. 1, the spike O _j is input to the synapse circuit 102 from other neuron circuit, based on the input timing of the spike O _j, the pulse generator 21 is the control signal Q _j Is output to the switch 22. The switch 22 is closed when the control signal _Qj is at the H level, and is open during other periods.

  When the switch 22 is closed, a predetermined power supply voltage and one end of the resistance change type memory element (storage element) 24 are connected. At this time, a switch 23 described later is also closed.

The resistance change type memory element 24 has a variable resistance value to be described later. When the switch 22 is closed, a current corresponding to the current resistance value σ _ji of the resistance change memory element 24 flows between a predetermined power supply voltage and the other end of the resistance change memory element 24, and the neuron circuit 101 is output.

  The neuron circuit 101 charges the capacitor 11 using the current output from the synapse circuit 102. The capacitor 11 is disposed between the negative input terminal (−) and the output terminal of the operational amplifier 12, and the capacitor 11 and the operational amplifier 12 constitute an integrating circuit. Then, due to the feedback function of the operational amplifier 12 that returns the output signal to the negative input terminal (−) via the feedback resistor 13, the input to the negative input terminal (−) becomes virtual ground, and charges are accumulated in the capacitor 11. The potential fluctuation due to is suppressed.

That is, since the operational amplifier 12 can keep the potential of the capacitor 11 of the neuron circuit 101 constant, a constant current can be passed through the resistance change type memory element 24 regardless of the potential of the capacitor 11. For this reason, it is possible to accurately change the resistance value σ _ji of the resistance change type memory element 24 described later.

The neuron circuit 101 charges the capacitor 11 to generate the above-described PSP, that is, the above-described time-space addition of the PSP is performed on the capacitor 11. The current output from the synapse circuit 102 is proportional to the resistance value σ _ji of the resistance change memory element 24, and the PSP becomes excitable or suppressive depending on the value.

  Specifically, in order to make the PSP excitable in FIG. 1, the other terminal of the resistance change type memory element 24 is connected to a potential (for example, power supply voltage) higher than the inverting input terminal voltage of the operational amplifier, and the capacitor 11 is charged. do it.

  On the other hand, in order to make PSP suppressive, the other terminal of the resistance change type memory element 24 may be connected to a potential (for example, ground potential) lower than the inverting input terminal voltage of the operational amplifier, and the capacitor 11 may be discharged.

  In order to make the PSP excitable or suppressive in this way, a switch for switching the connection destination of the other terminal of the resistance change type memory element 24 to the power supply voltage or the ground potential is required in FIG.

Then, the internal potential U _i generated by charging the capacitor 11 is compared with the threshold value TH by the comparator 14, and when the internal potential U _i exceeds the threshold value TH, the spike generation unit 15 determines that the internal potential U _i exceeds the threshold value TH. Spike _Pi is generated. Spike generation unit 15, simultaneously with its spike P _i generation, by increasing the threshold value TH certain period, it starts the refractory period discussed above.

The spike P _i generated by the spike generator 15 is output as a spike O _i to another neuron circuit after the propagation delay time set by the delay unit 16 has elapsed.

  Next, the STDP function of the information processing apparatus 100 will be described.

As shown in FIG. 1, in the synapse circuit 102, the STDP unit (arithmetic unit) 25 inputs the spike O _j input from another neuron circuit and the generation timing of the spike P _i generated by the spike generation unit 15. Based on the above, the STDP signal y _ji for changing the resistance value σ _ji of the resistance change type memory element 24 is generated. In the present embodiment, the resistance value σ _ji of the resistance change memory element 24 represents the above-described synapse coupling strength, and the synaptic coupling strength of the synapse circuit 102 can be updated by the change in the resistance value.

FIG. 2 shows a basic configuration of the STDP unit 25. The STDP unit 25 includes a waveform forming unit 27 that forms a nonlinear waveform, and a switch 28 for sampling the nonlinear waveform formed by the waveform forming unit 27. The STDP unit 25 operates with two spikes, that is, a spike O _j and a spike P _i . For example, the waveform forming unit 27 starts forming a nonlinear waveform of the spike O _j input from another neuron circuit. while it used as a trigger pulse to be used as a sampling pulse for opening and closing operation of the switch 28 to sample the nonlinear waveform formed spikes P _i generated by the spike generator 15 by the waveform forming section 27.

As described above, to spike generation unit 15 of the neuron circuit 101 to start the refractory period, increasing the threshold TH, the voltage conversion circuit 103 using the elevated threshold TH generates a control signal S _i. During the period when the control signal S _i is at the H level, the switch 23 of the synapse circuit 102 is in the open state and the switch (switching element) 26 is in the closed state. In other words, during the period in which the control signal S _i is at the H level, the connection destination to which one end of the resistance change type memory element 24 is connected is switched to the STDP unit 25.

That is, in this embodiment, generation of the spike _{P i} by the spike generator 15 and (synapse load), and generates the STDP signal _{y ji} by the STDP unit 25, by opening and closing operations of the switches 22, 23, 26 Has been switched.

Here, since spikes from other neuron circuits are not input, it is necessary to keep the above-mentioned synaptic load working at all times. The only exception is the period of refractory period immediately after spike firing, and in this embodiment, the generation of the STDP signal y _ji is executed by the opening / closing operation of the switches 22, 23, 26 within this period. The opening and closing operations of the switches 22, 23, 26, can be used spike _{P i} generated by the spike generator 15.

  At this time, the switch 17 of the neuron circuit 101 is closed, and the input of the neuron circuit 101 is grounded.

In the STDP section 25, as shown in FIG. 2, when a spike O _j is input from another neuron circuit to the synapse circuit 102, the waveform forming section 27 generates a predetermined nonlinear waveform Z _j using the spike O _j as a trigger. Form. This non-linear waveform Z _j has the function shape shown in FIGS. 11B and 11C, for example.

The spike _{P i} is generated by the spike generator 15 of the neuron circuit 101, is input to the STDP unit 25, the switch 28 is closed in its spike _{P i} is at the H level. As a result, during the period in which the switch 28 is in the closed state, the nonlinear waveform Z _j formed by the waveform forming unit 27 is sampled and output as a sampling signal y _ji having a pulse shape, that is, an STDP signal y _ji .

The sampling signal y _ji is output to one end of the resistance change memory element 24 via the switch 26. As will be described later, the resistance change type memory element 24 changes its resistance value σ _ji only when a signal having a voltage value equal to or higher than a predetermined threshold value is input. When the voltage value at the H level of the sampling signal y _ji is a value equal to or higher than the threshold value, the resistance value σ _ji of the resistance change memory element 24 changes according to the input of the sampling signal y _ji .

The resistance value σ _ji of the resistance change memory element 24 represents the synapse coupling strength of the synapse circuit 102 as described above. Therefore, when the resistance value σ _{ji of} the resistance change type memory element 24 changes, the synapse coupling strength of the synapse circuit 102 changes.

  Next, the operation of the information processing apparatus 100 in the present embodiment will be specifically described with reference to FIG. FIG. 3 is a timing chart for explaining the operation of the information processing apparatus 100.

As shown in FIG. 3, when a spike O _j is input from another neuron circuit to the synapse circuit 102 at time t ₁ , based on the input of the spike O _j , the pulse generator 21 controls the control signal Q _j Is output to the switch 22. The control signal Q _j is at the H level for a predetermined period from time t ₁ , and the switch 22 is closed while the control signal Q _j is at the H level. At this time, the switch 23 is also closed, and a current corresponding to the resistance value σ _ji of the resistance change memory element 24 is output to the neuron circuit 101.

The neuron circuit 101 charges and discharges the capacitor 11 using the current output from the synapse circuit 102. As a result, the internal potential U _i generated by charging / discharging of the capacitor 11 gradually increases, and the comparator 14 compares the internal potential U _i with a predetermined threshold TH, and at time t ₂ , the internal potential U _i is compared. _{When i} exceeds the threshold value TH, a comparison result indicating that _i is exceeded is output to the spike generator 15.

The spike generation unit 15 generates the spike P _i based on the comparison result that the internal potential U _i from the comparator 14 exceeds the threshold value TH. A spike-generating unit 15, the spike P _i generation and simultaneously, the threshold value TH is increased a certain period, starts the refractory period. The voltage conversion circuit 103 sets the H level period of the control signal S _i in accordance with the its refractory period, the switch 23 of the synapse circuit 102 opened, the switch 26 is closed. As a result, at the time t ₂ , one end of the resistance change memory element 24 is connected to the STDP unit 25.

When the spike P _i generated by the spike generator 15 is input, the delay unit 16 outputs the spike O _i to another neuron circuit after a predetermined propagation delay time has elapsed.

On the other hand, when the spike O _j is input from the other neuron circuit to the synapse circuit 102 at the time t ₁ , the STDP unit 25 causes the waveform forming unit 27 to generate a predetermined nonlinear waveform Z based on the input of the spike O _j. Start forming _j .

Then, as described above, at time t _2, the the spike P _i generated by the spike generator 15 is input to the STDP unit 25, the spike P _i is at the H level, the switch 28 is closed . As a result, the nonlinear waveform Z _j formed by the waveform forming unit 27 is sampled, and the STDP unit 25 outputs the sampling result as a sampling signal y _ji . The amplitude of the sampled signal _{y ji} is the same as the amplitude _{V ji} nonlinear waveform _{Z i} at time _{t 2.}

When this sampling signal y _ji is input, the resistance change memory element 24 changes its resistance value σ _ji and changes the synapse coupling strength of the synapse circuit 102.

  Next, the resistance change memory element 24 of the synapse circuit 102 will be described.

  FIG. 4 shows a structure of the resistance change type memory element 24 and an equivalent circuit at the time of measurement. For example, an RRAM (Resistance RAM: resistance change type memory element) includes an upper electrode 241, a lower electrode 242, and a resistor 243, as shown in FIG.

  The resistor 243 is made of a metal oxide and has a structure sandwiched between the upper electrode 241 and the lower electrode 242.

  By applying a pulse voltage to the RRAM, the electric resistance changes, and the resistance value is retained even when the power is turned off, and the RRAM functions as a nonvolatile memory. Usually, an operation that transitions from a high resistance state to a low resistance state is defined as a “SET (set) operation”, and an operation that transitions from a low resistance state to a high resistance state is defined as a “RESET (reset) operation”.

  A method of applying voltage pulses of the same polarity in both the SET operation and the RESET operation is called a “unipolar switching method (monopolar operation)”, and a method of applying a reverse polarity pulse is called a “bipolar switching method (bipolar operation)”.

  FIG. 5A shows the number of times that the pulse voltage (amplitude value 2.6 V) is applied to the resistance change memory element 24 at an interval of 35 nsec (the number of SET pulses) and the current flowing through the resistance change memory element 24 at that time. Show the relationship. As shown in FIG. 5A, it can be seen that the current flowing through the resistance change memory element 24 can be controlled according to the number of SET pulses.

  The resistance change memory element 24 can control the current flowing through the element according to the number of SET pulses. Therefore, the value of the current flowing through the element is determined according to the number of SET pulses to the resistance change memory element 24. That is, the resistance value of the resistance change memory element 24 can be changed.

  FIG. 5B shows the application time of the pulse voltage applied to the resistance change type memory element 24 (time when the pulse voltage having an amplitude value of 2.6 V is applied: unit: ns) (pulse width) and the resistance change type at that time. The relationship with the current flowing through the memory element 24 is shown. As shown in FIG. 5B, it can be seen that the current flowing through the resistance change memory element 24 can be controlled according to the application time.

  The resistance change memory element 24 can control the current flowing through the element according to the application time. Therefore, the value of the current flowing through the element is determined according to the application time to the resistance change type memory element 24. That is, the resistance value of the resistance change memory element 24 can be changed.

  FIG. 5C shows a relationship between a pulse voltage value when a predetermined pulse voltage is applied to the resistance change memory element 24 and a current flowing through the resistance change memory element 24 at that time. As shown in FIG. 5C, there is no change up to about 0.5 V, but the current flowing through the resistance change type memory element 24 can be controlled with a voltage higher than that according to the pulse voltage value. I understand that.

  The resistance change memory element 24 can control the current flowing through the element in accordance with the pulse voltage value. Therefore, the value of the current flowing through the element is determined according to the pulse voltage value to the resistance change memory element 24. That is, the resistance value of the resistance change memory element 24 can be changed. Furthermore, as shown in FIG. 5C, it can be seen that the pulse voltage value that changes the resistance value of the resistance change type memory element 24 has a threshold value.

  In the present embodiment, the resistance value of the resistance change memory element 4, that is, the synapse coupling strength of the synapse circuit 102 is changed according to the time difference between the two spikes and the temporal order. As described above, in order to change the resistance value of the resistance change memory element 24, any one of the number of SET pulses, the application time, and the pulse voltage value of the pulse voltage applied to the resistance change memory element 24 is changed. Just do it.

  In particular, when used for the STDP of the spiking neuron model, as described above, the resistance value of the resistance change type memory element 4 needs to be changed during a limited period of the refractory period. The technique to make is preferable.

Further, when this method of changing the pulse voltage value is used, the STDP unit 25 uses the fact that the pulse voltage value for changing the resistance value of the resistance change type memory element 24 has a threshold value so that the STDP unit 25 can change the resistance value type memory element 24. If the STDP signal y _ji output to the resistance change type memory element 24 is equal to or higher than the above threshold when the resistance value of the resistance change type memory element 24 is changed, a change in the resistance value of the resistance change type memory element 24 in the refractory period is realized. The

That is, in this embodiment, generation of the spike P _i by the spike generator 15 of the neuron circuit 101 (synaptic weight), applies a power supply voltage having a voltage value lower than said threshold value to the resistance variable memory device 24 On the other hand, to update the synapse coupling strength of the synapse circuit 102 by the STDP unit 25, the STDP signal y _ji having a voltage value equal to or higher than the threshold value is applied to the resistance change memory element 24.

  By doing so, it is possible to avoid a change in the resistance value of the resistance change type memory element 24 at the time of the synaptic load, so that the synapse coupling strength can be updated accurately.

  Next, a more specific configuration of the STDP unit 25 will be described. FIG. 6 is a circuit diagram showing the configuration of the STDP unit 25 having a symmetric structure, where (a) is a circuit diagram showing the configuration of the spike detection unit, and (b) is a circuit diagram showing the configuration of the load update unit. It is.

  As shown in FIG. 6, the symmetric STDP unit 25 includes a spike detection unit and a load update unit. In the spike detection unit, the state of the T-FF (Toggle flip-flop) is inverted twice by the spikes of pre and post. Inversion of the state in the T-FF is detected by a D & I (delay inversion circuit) and a NOR gate in the subsequent stage. As a result, spikes that arrive early are input to in1 of the load update unit, and those that arrive late are input to in2 after a predetermined delay time.

The load updating unit depends on only the time interval between pre and post and changes the STDP signal y _ji . On the other hand, when pre and post are input simultaneously, the state value of T-FF changes only once. In this case, the state of the T-FF is inverted again by the reset circuit in the circuit.

  When the input spike in1 is input to the load update unit, a ramp waveform VA is generated at the terminal of the capacitor CA. At the same time, the control signal SW becomes H level by D & I (delay inversion circuit). The ramp waveform VA is transformed into a non-linear waveform by the subsequent transistor M1 and input to the input terminal of the transconductance amplifier A1. The terminal voltage VB of the capacitor CB is settled to the reference potential VREF by the resistor R when the control signal SW becomes L level.

When the input spike in2 is input while the nonlinear waveform is generated by the transistor M1, the STDP signal y _ji from the transconductance amplifier A1 is applied to the resistance change memory element 24.

On the other hand, when the input spike in2 is input after the terminal voltage VB of the capacitor CB has settled to the reference potential VREF, the STDP signal y _ji from the transconductance amplifier A1 is not applied to the resistance change memory element 24.

Note that V _b3 and V _{b_rmp} are time windows of the STDP function, and pulse widths of V _{b_top} , V _{b_btm2,} and in2 are parameters that determine the amount of change in the resistance value of the resistance change memory element 24.

  FIG. 7 is a circuit diagram showing a configuration of the STDP section 25 having an asymmetric structure.

In the asymmetric STDP section 25, as shown in FIG. 7, the transconductance amplifier A1 increases the STDP signal y _ji in proportion to V1-VREF, whereas the transconductance amplifier A2 is in proportion to V2-VREF. Thus, the STDP signal y _ji is decreased. That is, the transconductance amplifier A1 operates as LTP (Long Term Potentiation), and the transconductance amplifier A2 operates as LTD (Long Term Depression).

When the input timing of Pre is t _pre and the input timing of Post is t _post, if t _post −t _pre > 0, the non-linear waveform V 1 is generated by the input spike pre and the transconductance amplifier A 1 is driven. . At this time, the transconductance amplifier A2 is also driven, but since V2−VREF = 0, the transconductance amplifier A2 cannot decrease the STDP signal y _ji . For this reason, the STDP signal y _ji is increased by the transconductance amplifier A1.

If t _post −t _pre = 0, the transconductance amplifiers A 1 and A 2 are driven simultaneously, and the STDP signal y _ji applied to the resistance change type memory element 24 is canceled out.

If t _post −t _pre <0, a nonlinear waveform V2 is generated by the input spike Post, and the transconductance amplifier A2 is driven. At this time, the transconductance amplifier A1 is also driven, but since V1−VREF = 0, the transconductance amplifier A1 cannot increase the STDP signal y _ji . For this reason, the STDP signal y _ji is decreased by the transconductance amplifier A2.

Similar to the symmetric STDP unit 25 described above, the shape of the STDP function is determined by bias values such as V _{b_top1} and V _{b_top2} .

As described above, according to the present embodiment, by inputting the STDP signal y _ji generated by the STDP unit 25 to one end of the resistance change memory element 24, the resistance change memory element 24 The resistance value, that is, the synapse coupling strength of the synapse circuit 102 can be changed.

  The feature of the information processing apparatus 100 in the present embodiment is that the resistance change memory element 24 uses a physical characteristic that a resistance value reversibly changes when a voltage pulse is applied. The resistance change memory element 24 is an element whose electrical resistance reversibly changes when a voltage pulse is applied. In recent years, the resistance change memory element 24 is expected to be applied as a next-generation non-volatile random access memory (NVRAM) capable of high-speed operation instead of a flash memory. Examples of the resistance change memory element 24 include RRAM (Resistance RAM) and PCRAM (Phase Change RAM) as described in Non-Patent Document 4.

  As described above, according to the present embodiment, the synapse coupling strength of the synapse circuit 102 is expressed by using the resistance value of the resistance change type memory element 24, so that the synapse coupling is not increased on the LSI chip. Since the intensity can be stored as an analog quantity, high integration of the LSI chip can be realized.

  In addition, since the resistance value of the resistance change type memory element 24 can be easily changed by applying a voltage pulse, a complicated circuit configuration is not required, and as a result, the area occupied by the LSI chip can be reduced.

(Embodiment 2)
Next, a second embodiment of the present invention will be described. In the first embodiment, the feedback function of the operational amplifier 12 suppresses the potential fluctuation caused by the charge accumulated in the capacitor 11.

  On the other hand, in the present embodiment, the resistance value of the resistance change type memory element 24 is converted into a voltage value, and the current source is controlled using the converted voltage value. By doing so, use of the feedback function of the operational amplifier can be made unnecessary.

  FIG. 8 is a diagram for explaining a state in which the resistance value of the resistance change type memory element 24 is converted into a voltage value and the current source is controlled using the converted voltage value in the information processing apparatus according to the present embodiment. It is explanatory drawing.

  In the information processing apparatus according to the present embodiment, a capacitor 41 is connected to the other end of the resistance change memory element 24 as shown in FIG. The capacitor 41 is charged and discharged by a current flowing through the resistance change memory element 24, and applies a potential Vc to the connection point between the other end of the resistance change memory element 24 and the capacitor 41.

  When charges are gradually accumulated in the capacitor 41 and the potential Vc rises to a predetermined potential Vco, the transistor 42 connected to the connection point between the other end of the resistance change memory element 24 and the capacitor 41 is closed. .

  As a result, the capacitor 11 of the neuron circuit 101 is connected to the predetermined power supply voltage via the switch 44 and the transistor 42 that are closed in advance, and a constant current is output to the capacitor 11. Therefore, it is possible to prevent the potential variation due to the accumulation of charges in the capacitor 11 from affecting the resistance change type memory element 24.

  Next, the operation of the information processing apparatus in this embodiment will be described more specifically with reference to the timing chart of FIG.

  As shown in FIG. 8B, when a predetermined power supply voltage V having an amplitude Vo is applied to one end of the resistance change memory element 24 at time 0, a current is supplied to the resistance change memory element 24. The capacitor 41 is charged by the flowing current. By charging the capacitor 41, the potential Vc gradually increases at the connection point between the other end of the resistance change memory element 24 and the capacitor 41.

  At time T, the application of the power supply voltage V ends, and the potential Vc at the connection point reaches Vco. Here, the arrival point Vco of the potential Vc of the connection point at time T is given from the amplitude Vo of the predetermined power supply voltage V, the current resistance value R of the resistance change memory element 24 and the capacitance value C of the capacitor 41. It is calculated based on the equation shown in FIG. 8B using the time constant τ = RC.

  In this way, the potential Vc at the connection point between the resistance change memory element 24 and the capacitor 41 reaches Vco, and this Vco is supplied to the gate terminal of the transistor 42 connected to the connection point. The threshold voltage of the transistor 42 is set in advance so as to be equal to or higher than this Vco. For this reason, the transistor 42 is in a closed state when the potential Vc at the connection point reaches Vco, that is, after time T.

  When the transistor 42 is closed, a constant current is supplied to the capacitor 11 of the neuron circuit 101 through the transistor 42. The capacitor 11 is charged by this constant current.

(Embodiment 3)
Next, a third embodiment of the present invention will be described. FIG. 9 is a block diagram showing a configuration of the information processing apparatus according to Embodiment 3 of the present invention. Hereinafter, the same reference numerals are given to the same parts as those of the first embodiment of the present invention, and the detailed description thereof is omitted.

  As shown in FIG. 9, the information processing apparatus 100a according to the present embodiment includes a plurality of neuron circuits 101a and a plurality of synapse circuits 102a. For ease of drawing, only one neuron circuit 101a and one synapse circuit 102a are shown, but actually, a plurality of neuron circuits 101a are connected to each other via a plurality of synapse circuits 102a. Yes.

  As shown in FIG. 9, the difference between the information processing apparatus 100a of the present embodiment and the information processing apparatus 100 of the first embodiment is that instead of the switches 23 and 26, an STDP unit 25 and a resistance change type memory are used. The capacitor 29 is disposed between the element 24 and the element 24.

In the information processing apparatus 100a of the present embodiment, the STDP signal y _ji generated by the STDP unit 25 is supplied to one end of the resistance change type memory element 24 via the capacitor 29. The STDP unit 25 and the resistance change type memory element 24 are capacitively coupled by the capacitor 29. Therefore, unlike the first embodiment, the resistance change type memory element 24 using the switches 23 and 26 is connected. It is not necessary to switch the connection destination.

Since the STDP signal y _ji output from the STDP unit 25 has a pulse shape with a narrow time width, the STDP signal y _ji passes through the capacitor 29 in an alternating manner and is applied to the resistance change memory element 24. On the other hand, the time during which the PSP is generated based on the control signal Q _j output from the pulse generator 21 is longer than the time width of the STDP signal y _ji. Do not flush.

  Therefore, in the present embodiment, the connection destination of the resistance change memory element 24 can be switched without using the switches 23 and 26 of the first embodiment.

  The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope shown in the claims, and embodiments obtained by appropriately combining technical means disclosed in different embodiments. Is also included in the technical scope of the present invention.

  The present invention can also be expressed as follows. That is, the information processing apparatus according to the present invention is characterized in that the resistance value of the resistance change type memory element is changed in proportion to a value obtained by converting the time difference between two spike pulses according to a predetermined function.

  By generating a non-linear voltage waveform by the first input spike pulse and sampling it by the second input spike pulse, the voltage value converted by a function similar to the voltage waveform is obtained. It is preferable to change the resistance value by applying the voltage value to the resistance change memory element.

  A plurality of resistance change type memory devices are prepared corresponding to a plurality of input pulses, a temporary voltage or current signal is generated from each of the plurality of input pulses, and the temporary voltage or current signal is supplied to the resistor. The temporary voltage weighted with a resistance value by collecting current as a current on a common line through a changeable memory element, connecting a charge storage element or a current detection circuit to the common line, and detecting a current value or a charge amount. It is preferable to obtain the sum of the signals.

  A neural network having a spike pulse as an information expression, wherein the resistance value of the resistance change type memory element is changed during a refractory period immediately after the firing of a neuron, and the addition value of the temporary voltage signal is changed during other periods. It is preferable to obtain.

  INDUSTRIAL APPLICABILITY The present invention can be applied to an information processing apparatus using a resistance change type memory element that can store information by a change in electric resistance caused by applying an electrical stress, and a neural network using the information processing apparatus as a neuron element. it can.

It is a block diagram which shows the structure of the information processing apparatus in Embodiment 1 of this invention. It is a block diagram which shows the basic composition of the STDP part shown in FIG. 3 is a timing chart for explaining the operation of the information processing apparatus shown in FIG. 1. FIG. 2 is a circuit diagram showing an equivalent circuit when measuring the structure and electrical characteristics of the resistance change type memory element shown in FIG. 1. (A) is a graph showing the SET pulse frequency dependence of the current value flowing through the resistance change type memory element shown in FIG. 1, and (b) is a predetermined pulse of the current value flowing through the resistance change type memory element shown in FIG. FIG. 4C is a graph showing the voltage pulse width (application time of a predetermined pulse voltage) dependence of voltage, and FIG. 5C is a graph showing the pulse voltage dependence of the current value flowing through the resistance change type memory element shown in FIG. FIG. 2 is a circuit diagram illustrating a specific configuration of an STDP unit illustrated in FIG. 1, in which (a) is a circuit diagram illustrating a configuration of a spike detection unit, and (b) is a circuit diagram illustrating a configuration of a load update unit. FIG. 3 is a circuit diagram showing another specific configuration of the STDP section shown in FIG. 1. It is explanatory drawing for demonstrating operation | movement of the information processing apparatus in Embodiment 2 of this invention. It is a block diagram which shows the structure of the information processing apparatus in Embodiment 3 of this invention. It is explanatory drawing for demonstrating the conventional spike type neuron model. It is explanatory drawing for demonstrating the conventional STDP.

Explanation of symbols

100, 100a Information processing apparatus 101, 101a Neuron circuit (neuron part)
102, 102a Synapse circuit (synapse part)
11, 29, 41 Capacitor 12 Operational amplifier 13 Feedback resistor 14 Comparator 15 Spike generator 16 Delay unit 21 Pulse generator 22, 23, 28, 43, 44 Switch 24 Resistance change type memory element (memory element)
25 STDP section (calculation section)
26 switch (switching element)
27 Waveform Forming Unit 42 Transistor 241 Upper Electrode 242 Lower Electrode 243 Resistor

Claims (6)

An information processing apparatus including at least one synapse unit that receives a spike pulse and gives a weight value to the spike pulse to generate a weight signal,
The synapse part is
A memory element having a resistance value reversibly changed by application of a voltage pulse;
A calculation unit that performs a calculation using a function that represents a preset non-linear voltage waveform according to a shift in input timing between two spike pulses input at different timings;
The storage element has the resistance value set as an analog quantity representing a weight value given to the spike pulse,
When the two spike pulses are input, the calculation unit performs a calculation for a shift in input timing between the two spike pulses using the function, and applies to the storage element based on a result of the calculation An information processing apparatus for setting a voltage pulse to be performed.   When the first spike pulse and the second spike pulse are input in this order, the arithmetic unit generates a non-linear voltage waveform represented by the function based on the input timing of the first spike pulse. 2. The method of claim 1, further comprising: sampling the nonlinear voltage waveform using the second spike pulse as a sampling pulse, and applying a voltage pulse having a voltage value in the sampled waveform to the storage element. The information processing apparatus described. Adding a plurality of weighting signals generated by each of the plurality of synapse units, further comprising a plurality of neuron units for generating a weighted addition signal;
Each of the plurality of neuron units generates a new spike pulse when the level of the weighted addition signal generated by itself is equal to or higher than a predetermined threshold value to generate a spike pulse,
Each of the plurality of synapse units stops after the generation of a new spike pulse by the neuron unit regardless of whether or not a spike pulse is input to the synapse unit. 3. The information processing apparatus according to claim 1, wherein voltage pulse application to the storage element is performed by the arithmetic unit during a pulse generation stop period. The storage element has a threshold value of a voltage value of a voltage pulse required for changing its own resistance value,
When the weight signal is generated by the synapse unit, the memory element is applied with a voltage pulse having a voltage value less than the threshold value, while the weight value is updated by a change in its resistance value. The information processing apparatus according to claim 1, wherein a voltage pulse having a voltage value equal to or greater than the threshold is applied. Each of the plurality of synapse units further includes a switching element disposed between the arithmetic unit and the storage element,
The information processing apparatus according to claim 3, wherein the switching element is closed only during the pulse generation stop period.   6. A neural network circuit using the information processing apparatus according to claim 1 as a neuron element.

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