JP2010142677A - Exhaust gas treatment system for semiconductor manufacturing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an exhaust gas treatment system which can treat an exhaust gas while inhibiting the inflow of oxygen or moisture into an exhaust gas treatment device, when the exhaust gas discharged from a semiconductor manufacturing device contains oxygen or moisture. <P>SOLUTION: The exhaust gas treatment system 10 for the semiconductor manufacturing device 80 includes a removal device 30 for eliminating at least, either oxygen or moisture from exhaust gas to be discharged from the semiconductor manufacturing device 80 and the exhaust gas treatment device 20 for treating the exhaust gas after passing through the removal device 30. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an exhaust gas treatment system for treating exhaust gas discharged from a semiconductor manufacturing apparatus. The “semiconductor manufacturing apparatus” means an apparatus used for manufacturing semiconductor elements such as an etching apparatus and a film forming apparatus.

2. Description of the Related Art An exhaust gas processing apparatus that processes exhaust gas discharged from a semiconductor manufacturing apparatus such as an etching apparatus or a film forming apparatus is known. For example, Patent Document 1 discloses an exhaust gas processing apparatus that processes exhaust gas discharged from a semiconductor manufacturing apparatus (CVD film forming apparatus). The exhaust gas discharged from the semiconductor manufacturing apparatus contains components that easily react with oxygen and moisture. Therefore, if oxygen and moisture are present in the exhaust gas treatment device, the exhaust gas reacts with oxygen and moisture in the exhaust gas treatment device. If the exhaust gas reacts with oxygen or moisture in the exhaust gas treatment device, the product of the reaction clogs the exhaust gas passage (for example, a filter or a chemical cylinder) in the exhaust gas treatment device, or corrodes the piping in the exhaust gas treatment device. Such problems arise.
Since the atmosphere (that is, oxygen and moisture) flows into the exhaust gas treatment device during maintenance work and inspection work of the exhaust gas treatment device, in the exhaust gas treatment device of Patent Document 1, the oxygen concentration in the pipe of the exhaust gas treatment device after these operations And the moisture concentration is detected. And when these detection values are more than a reference value, the gas in piping is discharged outside. Thus, when the exhaust gas treatment device is subsequently operated, the exhaust gas is prevented from reacting with oxygen or moisture in the exhaust gas treatment device.

JP2007-14909

  The exhaust gas treatment device of Patent Document 1 discharges oxygen and moisture remaining in the exhaust gas treatment device after maintenance work or the like, so that the exhaust gas reacts with oxygen and moisture in the exhaust gas treatment device during subsequent operation. Suppress. However, oxygen and moisture may be contained in the exhaust gas discharged from the semiconductor manufacturing apparatus. For example, when maintaining a semiconductor manufacturing apparatus, air (that is, oxygen or moisture) flows into the semiconductor manufacturing apparatus. Accordingly, when the semiconductor manufacturing apparatus is subsequently operated, the atmosphere is mixed in the exhaust gas discharged from the semiconductor manufacturing apparatus. In addition, even when the semiconductor manufacturing apparatus fails, air is mixed into the exhaust gas of the semiconductor manufacturing apparatus. In this case, the reaction between the exhaust gas and oxygen or moisture can occur in the entire flow path downstream from the location where the air is mixed, but the filter, chemical cylinder and piping in the exhaust gas treatment device are clogged with the products from the reaction. In particular, the inflow of oxygen and moisture into the exhaust gas treatment apparatus is particularly problematic. In the exhaust gas treatment apparatus of Patent Document 1, oxygen and moisture contained in the exhaust gas discharged from the semiconductor manufacturing apparatus cannot be removed. For this reason, when oxygen and moisture are contained in the exhaust gas discharged from the semiconductor manufacturing apparatus, there is a problem that it is impossible to suppress the exhaust gas from reacting with oxygen and moisture in the exhaust gas treatment apparatus. .

  The present invention was created in view of the above-described circumstances, and oxygen and moisture flow into the exhaust gas treatment device when the exhaust gas discharged from the semiconductor manufacturing device contains oxygen and moisture. It aims at providing the exhaust gas processing system which can process exhaust gas, suppressing.

The exhaust gas treatment system of the present invention includes a removal device that removes at least one of oxygen and moisture from exhaust gas discharged from a semiconductor manufacturing device, and an exhaust gas treatment device that treats the exhaust gas after passing through the removal device.
In this specification, “removing” means removing at least a part of the target component (oxygen, moisture, etc.), and does not require removing all the target component. Further, “removing” includes removing the target component by adsorption, decomposing the target component, and the like.
In this exhaust gas treatment system, the exhaust gas discharged from the semiconductor manufacturing apparatus passes through the removal device. When oxygen and moisture are present in the exhaust gas, the oxygen and moisture are removed by the removing device. Exhaust gas in which the concentration of oxygen or moisture has decreased by passing through the removal device flows into the exhaust gas treatment device. Therefore, it is possible to suppress the exhaust gas from reacting with oxygen or moisture in the exhaust gas treatment apparatus.

The exhaust gas treatment system described above preferably further includes a first detection device and a first path switching device. The first detection device detects at least one of oxygen concentration and moisture concentration in the exhaust gas discharged from the semiconductor manufacturing apparatus. When the concentration detected by the first detection device is greater than or equal to the reference value, the first path switching device allows the exhaust gas to flow into the exhaust gas treatment device after passing through the removal device, and the concentration detected by the first detection device is When it is less than the reference value, the flow path of the exhaust gas is switched so that the exhaust gas flows into the exhaust gas treatment device without passing through the removal device.
In this exhaust gas treatment system, when the oxygen concentration and moisture concentration in the exhaust gas discharged from the semiconductor manufacturing apparatus are sufficiently low, the exhaust gas is allowed to flow into the exhaust gas treatment apparatus without passing through the removal apparatus. Therefore, consumption of the removal device can be suppressed, and the number of maintenance and replacement operations of the removal device can be reduced.

The exhaust gas treatment system described above preferably further includes a second detection device and a second path switching device. The second detection device detects at least one of oxygen concentration and moisture concentration in the exhaust gas after passing through the removal device. When the concentration detected by the second detection device is equal to or higher than the reference value, the second path switching device passes the exhaust gas that has passed through the removal device again through the removal device, and the concentration detected by the second detection device is the reference value. When it is less than the range, the flow path of the exhaust gas is switched so that the exhaust gas after passing through the removing device flows into the exhaust gas treatment device.
In this exhaust gas treatment system, when the oxygen concentration and moisture concentration in the exhaust gas after passing through the removal device are not sufficiently low, the exhaust gas after passing through the removal device is allowed to pass through the removal device again. Then, when the oxygen concentration and moisture concentration in the exhaust gas after passing through the removal device are sufficiently reduced, the exhaust gas is caused to flow into the exhaust gas treatment device. Therefore, it is possible to reliably prevent oxygen or moisture having a concentration higher than the reference value from flowing into the exhaust gas treatment apparatus.

  According to the exhaust gas treatment system of the present invention, it is possible to prevent oxygen and moisture from flowing into the exhaust gas treatment device even when the exhaust gas discharged from the semiconductor manufacturing device contains oxygen and moisture. it can. Therefore, it is possible to suppress the exhaust gas from reacting with oxygen or moisture in the exhaust gas treatment apparatus. For this reason, the durability of the exhaust gas treatment device can be improved, and the burden of maintenance of the exhaust gas treatment device can be reduced.

(First embodiment)
An exhaust gas treatment system according to the first embodiment will be described. FIG. 1 is a block diagram showing a schematic configuration of the exhaust gas treatment system 10. As shown in FIG. 1, the exhaust gas treatment system 10 is connected to an LPCVD apparatus 80. The exhaust gas processing system 10 processes exhaust gas discharged from the LPCVD apparatus 80.

The LPCVD apparatus 80 grows a silicon film on the surface of a wafer installed therein. The LPCVD apparatus 80 is connected to the supply pipe 82 and the pipe 70 of the exhaust gas treatment system 10.
When the film forming process is performed by the LPCVD apparatus 80, the source gas is supplied from the supply pipe 82 to the LPCVD apparatus 80. The source gas is a gas in which SiH ₄ gas (silane gas) and N ₂ gas (nitrogen gas) are mixed. The LPCVD apparatus 80 grows a silicon film on a wafer installed inside using the supplied source gas. The LPCVD apparatus 80 discharges the source gas used for the film forming process into the pipe 70. The exhaust gas discharged into the pipe 70 contains SiH ₄ gas.
Further, when the film forming process is performed, a by-product (mainly silicon) adheres to the inside of the LPCVD apparatus 80. Therefore, a cleaning process for supplying a cleaning gas into the LPCVD apparatus 80 is performed. In this case, the cleaning gas is supplied from the supply pipe 82 to the LPCVD apparatus 80. The cleaning gas is a gas containing ClF ₃ gas (chlorine trifluoride gas). The ClF ₃ gas reacts with the by-product in the LPCVD apparatus 80 to etch the by-product. The LPCVD apparatus 80 discharges the cleaning gas used for the cleaning process to the pipe 70. The flue gas is discharged to the pipe 70 includes a ClF ₃ gas.
In addition, air (that is, oxygen or moisture) may flow into the LPCVD apparatus 80 during maintenance or failure. When the LPCVD apparatus 80 is operated in a state where oxygen and hydrogen are present therein, oxygen and hydrogen are mixed into the exhaust gas. If oxygen and moisture are mixed in the exhaust gas during the film forming process, the SiH ₄ gas reacts with oxygen or moisture to generate a powdery solid. In addition, if oxygen and moisture are mixed in the exhaust gas during the cleaning process, the ClF ₄ gas may react with oxygen or moisture to corrode the piping.

  The exhaust gas treatment system 10 includes an exhaust gas treatment device 20, a deoxygenation / dehumidification device 30, an oxygen / water concentration detection device 40, a switching valve 50, a control device 60, and pipes 70 to 73.

  The pipe 70 has an upstream end connected to the LPCVD apparatus 80 and a downstream end connected to the switching valve 50. Exhaust gas is discharged from the LPCVD apparatus 80 into the pipe 70.

  The oxygen / water concentration detector 40 is installed in the middle of the pipe 70. The oxygen / water concentration detection device 40 detects the oxygen concentration and the water concentration in the exhaust gas flowing in the pipe 70. The oxygen / water concentration detection device 40 is electrically connected to the control device 60. The oxygen concentration and water concentration detected by the oxygen / water concentration detection device 40 are input to the control device 60.

  The switching valve 50 is connected to the downstream end of the pipe 70. In addition, the upstream end of the pipe 71 and the upstream end of the pipe 72 are connected to the switching valve 50. The switching valve 50 can switch between a state in which gas flows from the pipe 70 to the pipe 71 and a state in which gas flows from the pipe 70 to the pipe 72. Further, the switching valve 50 is electrically connected to the control device 60. The switching valve 50 is controlled by the control device 60.

  The control device 60 is electrically connected to the oxygen / water concentration detection device 40 and the switching valve 50. The control device 60 determines whether or not the oxygen concentration and the water concentration input from the oxygen / water concentration detecting device 40 are equal to or higher than the respective reference values. The reference value of the oxygen concentration is set to a value that does not cause a problem even if oxygen less than the reference value flows into the exhaust gas treatment device 20. The reference value of the moisture concentration is set to a value that does not cause a problem even if moisture less than the reference value flows into the exhaust gas treatment device 20. The control device 60 controls the switching valve 50 based on the above determination.

  The pipe 71 has an upstream end connected to the switching valve 50 and a downstream end connected to the exhaust gas treatment device 20.

  The pipe 72 has an upstream end connected to the switching valve 50 and a downstream end joined to the pipe 71.

  The deoxygenation / dehumidification device 30 is interposed in the pipe 72. Although not shown, the deoxygenation / dehumidification device 30 includes a deoxygenation filter and a dehumidification filter. The deoxygenation filter is a filter provided with an oxygen scavenger and chemically combines with oxygen in the gas flowing in the pipe 72 to remove oxygen from the gas in the pipe 72. The dehumidifying filter is a filter provided with a dehumidifying agent, and adsorbs and removes moisture in the gas flowing in the pipe 72.

  The exhaust gas treatment device 20 is connected to the downstream end of the pipe 71. Further, the upstream end of the pipe 73 is connected to the exhaust gas treatment device 20. Exhaust gas flows from the pipe 71 into the exhaust gas treatment device 20. The exhaust gas treatment device 20 includes a drug cylinder and various filters (hereinafter referred to as a drug cylinder or the like). The exhaust gas treatment device 20 removes a specific component (such as an environmental load substance) from the exhaust gas by allowing the inflowing exhaust gas to pass through a medicine cylinder or the like. The exhaust gas treatment device 20 discharges the exhaust gas that has passed through the medicine cylinder and the like to the pipe 73. The pipe 73 is connected to an external processing device. The exhaust gas discharged to the pipe 73 is sent to an external processing device and further detoxified.

Next, the operation of the exhaust gas treatment system 10 will be described. As an example, the operation of the exhaust gas treatment system 10 when the film formation process is performed by the LPCVD apparatus 80 will be described.
At the start of the film forming process, the switching valve 50 is controlled so that gas flows from the pipe 70 to the pipe 72. When the film forming process is executed by the LPCVD apparatus 80, exhaust gas containing SiH ₄ gas flows into the pipe 70 from the LPCVD apparatus 80. When the exhaust gas flows into the pipe 70, the oxygen concentration and the moisture concentration in the exhaust gas in the pipe 70 are detected by the oxygen / water concentration detection device 40. Then, the control device 60 determines whether or not the oxygen concentration and the water concentration detected by the oxygen / water concentration detecting device 40 are equal to or higher than a reference value. The control device 60 switches the operation state of the exhaust gas treatment system 10 according to the determination result.

When either the oxygen concentration or the moisture concentration in the exhaust gas in the pipe 70 is equal to or higher than the reference value, the control device 60 controls the switching valve 50 so that the gas flows from the pipe 70 to the pipe 72. Therefore, the exhaust gas in the pipe 70 flows to the pipe 72 as indicated by the arrow 90 in FIG. The exhaust gas passes through the deoxygenation / dehumidification device 30 when flowing in the pipe 72. At this time, oxygen and moisture in the exhaust gas are removed by the deoxygenation / dehumidification device 30. Therefore, when it passes through the deoxygenation / dehumidification device 30, the oxygen concentration and the moisture concentration in the exhaust gas decrease. The exhaust gas that has passed through the deoxygenation / dehumidification device 30 flows into the exhaust gas treatment device 20 as indicated by an arrow 91 in FIG. The gas that has flowed into the exhaust gas treatment device 20 is discharged into the pipe 73 after a specific component is removed.
As described above, when either the oxygen concentration or the moisture concentration of the exhaust gas in the pipe 70 is high, the exhaust gas is allowed to flow into the exhaust gas treatment device 20 after passing through the deoxygenation / dehumidification device 30. For this reason, it is suppressed in the exhaust gas processing apparatus 20 that SiH ₄ gas reacts with oxygen or moisture to generate a powdery solid. Thereby, it is suppressed that the powder-like solid substance is clogged in the chemical | medical agent cylinder, filter, etc. in the exhaust gas processing apparatus 20, and the performance of the exhaust gas processing apparatus 20 falls.

On the other hand, when both the oxygen concentration and the moisture concentration in the exhaust gas in the pipe 70 are less than the reference value, the control device 60 controls the switching valve 50 so that the gas flows from the pipe 70 to the pipe 71. As a result, as indicated by an arrow 92 in FIG. 1, the exhaust gas in the pipe 70 flows into the exhaust gas treatment device 20 through the pipe 71. Since the oxygen concentration and moisture concentration in the exhaust gas are low, the SiH ₄ gas is suppressed from reacting with oxygen and moisture in the exhaust gas treatment device 20. Thus, when the oxygen concentration and moisture concentration in the exhaust gas in the pipe 70 are low, it is not necessary to remove oxygen and moisture in the exhaust gas. By not allowing the exhaust gas to pass through the deoxygenation / dehumidification device 30 when it is not necessary to remove oxygen and moisture, consumption of the deoxygenation filter and dehumidification filter of the deoxygenation / dehumidification device 30 can be suppressed.

As described above, when the LPCVD apparatus 80 performs the film forming process, the exhaust gas passes through the deoxygenation / dehumidification apparatus 30 according to the oxygen concentration and moisture concentration in the exhaust gas in the pipe 70, and the exhaust gas processing apparatus. Oxygen and moisture are prevented from flowing into 20. As a result, generation of powdery solids in the exhaust gas treatment device 20 is suppressed, and problems in the exhaust gas treatment device 20 are suppressed.
In the above example, the operation when the LPCVD apparatus 80 performs the film forming process has been described. However, when the LPCVD apparatus 80 performs the cleaning process, the exhaust gas processing system 10 operates similarly. In this case, ClF ₄ gas is contained in the exhaust gas. By the operation of the exhaust gas treatment system 10, it is prevented from oxygen and moisture to flow into the exhaust gas treatment apparatus 20, and the ClF ₄ gas and oxygen or moisture in the exhaust gas treatment device 20 to react is suppressed. This suppresses corrosion of the piping in the exhaust gas treatment device 20.

(Second embodiment)
Next, the exhaust gas treatment system 110 of the second embodiment will be described. FIG. 2 is a block diagram showing a schematic configuration of the exhaust gas treatment system 110 of the second embodiment. In FIG. 2, portions having the same functions as those of the exhaust gas treatment system 10 of the first embodiment are denoted by the same reference numerals as those of the first embodiment. Below, among the structure of the exhaust gas treatment system 110 of 2nd Example, a different part from the exhaust gas treatment system 10 of 1st Example is demonstrated, and description is abbreviate | omitted about another part.

  As shown in FIG. 2, in addition to the configuration of the exhaust gas treatment system 10 of the first embodiment, the exhaust gas treatment system 110 includes an oxygen / water concentration detector 42, a switching valve 52, pipes 78 and 79, and a pump 65. It has.

  The oxygen / water concentration detection device 42 is installed in the pipe 71 at a position downstream of the joining portion of the pipe 72. The oxygen / water concentration detector 42 detects the oxygen concentration and the water concentration in the exhaust gas flowing in the pipe 71. The oxygen / water concentration detection device 42 is electrically connected to the control device 60. The oxygen concentration and water concentration detected by the oxygen / water concentration detecting device 42 are input to the control device 60.

  The switching valve 52 is connected to the downstream end of the pipe 71. Further, the upstream end of the pipe 78 and the upstream end of the pipe 79 are connected to the switching valve 52. The switching valve 52 switches between a state in which gas flows from the pipe 71 to the pipe 78 and a state in which gas flows from the pipe 71 to the pipe 79. The switching valve 52 is electrically connected to the control device 60. The switching valve 52 is controlled by the control device 60.

  The pipe 78 has an upstream end connected to the switching valve 52 and a downstream end connected to the pipe 72 at a position upstream of the deoxygenation / dehumidification device 30. The pipe 79 has an upstream end connected to the switching valve 52 and a downstream end connected to the exhaust gas treatment device 20.

  The pump 65 is interposed in the pipe 78. The pump 65 sends the gas in the pipe 78 downstream. Although not shown, the pump 65 is electrically connected to the control device 60. The pump 65 is controlled by the control device 60.

  In the exhaust gas treatment system 110, the switching valve 50 switches between a state in which gas flows from the pipe 70 to the pipe 71, a state in which gas flows from the pipe 70 to the pipe 72, and a closed state (a state in which no gas flows). It is possible.

Next, the operation of the exhaust gas treatment system 110 will be described. As an example, the operation of the exhaust gas treatment system 110 when a film forming process is performed by the LPCVD apparatus 80 will be described.
At the start of the film forming process, the switching valve 50 is controlled so that gas flows from the pipe 70 to the pipe 72, and the switching valve 52 is controlled so that gas flows from the pipe 71 to the pipe 79. 65 is stopped.
When the film forming process is executed by the LPCVD apparatus 80, exhaust gas containing SiH ₄ gas flows into the pipe 70 from the LPCVD apparatus 80. When the exhaust gas flows into the pipe 70, the oxygen concentration and the moisture concentration in the exhaust gas in the pipe 70 are detected by the oxygen / water concentration detection device 40. Then, the control device 60 determines whether or not the oxygen concentration and the water concentration detected by the oxygen / water concentration detecting device 40 are equal to or higher than a reference value. The control device 60 switches the operation state of the exhaust gas treatment system 10 according to the determination result.

When either the oxygen concentration or the moisture concentration in the exhaust gas in the pipe 70 is equal to or higher than the reference value, the control device 60 controls the switching valve 50 so that the gas flows from the pipe 70 to the pipe 72. 52 is controlled so that gas flows from the pipe 71 to the pipe 79 (hereinafter, this operation state is referred to as a first operation state). Therefore, as indicated by arrows 93, 94, and 95 in FIG. 2, the exhaust gas in the pipe 70 flows toward the exhaust gas treatment device 20 after passing through the deoxygenation / dehumidification device 30.
In this case, the oxygen / water concentration detection device 42 detects the oxygen concentration and the water concentration in the exhaust gas flowing through the pipe 71 (that is, the exhaust gas after passing through the deoxygenation / dehumidification device 30). When either the oxygen concentration or the water concentration detected by the oxygen / water concentration detection device 42 is equal to or higher than the reference value, the control device 60 closes the switching valve 50 and moves the switching valve 52 from the pipe 71 to the pipe 78. Control is performed so that the gas flows, and the pump 65 is operated (hereinafter, this operation state is referred to as a second operation state). Therefore, as shown by arrows 94, 96, and 97 in FIG. As a result, the exhaust gas after passing through the deoxygenation / dehumidification device 30 is sent again to the deoxygenation / dehumidification device 30, and the oxygen concentration and moisture concentration in the exhaust gas are further reduced. The second operating state is continued until both the oxygen concentration and the water concentration (that is, the detected value of the oxygen / water concentration detecting device 42) in the circulating exhaust gas are less than the reference value. When the oxygen concentration and the water concentration are less than the reference values, the control device 60 returns the operation state to the first operation state. Therefore, the exhaust gas whose oxygen concentration and moisture concentration are reduced to below the reference value flows into the exhaust gas treatment device 20. Thereby, the exhaust gas whose oxygen concentration or moisture concentration is equal to or higher than the reference value is prevented from flowing into the exhaust gas treatment device 20.
During the second operation state, the switching valve 50 is closed, so that the exhaust gas cannot flow into the pipe 70 from the LPCVD apparatus 80. Therefore, the LPCVD apparatus 80 may be temporarily stopped. In addition, when the LPCVD apparatus 80 includes a buffer tank or the like that temporarily stores the exhaust gas discharged to the pipe 70, the operation of the LPCVD apparatus 80 may be continued to store the exhaust gas in the buffer tank.

  On the other hand, when both the oxygen concentration and the moisture concentration in the exhaust gas in the pipe 70 are less than the reference value, the control device 60 controls the switching valve 50 so that the gas flows from the pipe 70 to the pipe 71, and the switching is performed. The valve 52 is controlled so that gas flows from the pipe 71 to the pipe 79. As a result, as shown by arrows 98 and 95 in FIG. 2, the exhaust gas in the pipe 70 flows into the exhaust gas treatment device 20 through the pipes 71 and 79.

As described above, in the exhaust gas treatment system 110 of the second embodiment, the oxygen concentration and water concentration in the exhaust gas after passing through the deoxygenation / dehumidification device 30 are detected, and either of the detected oxygen concentration or water concentration is detected. If it is equal to or greater than the reference value, the exhaust gas after passing through the deoxygenation / dehumidification device 30 is passed through the deoxygenation / dehumidification device 30 again. For this reason, the exhaust gas repeatedly passes through the deoxygenation / dehumidification device 30 as long as the oxygen concentration and moisture concentration in the exhaust gas after passing through the deoxygenation / dehumidification device 30 do not become less than the reference values. Then, when the oxygen concentration and the water concentration are less than the reference values, the exhaust gas is sent to the exhaust gas treatment device 20. For this reason, it can prevent reliably that the exhaust gas whose oxygen concentration or moisture concentration is more than a reference value flows into the exhaust gas treatment device 20. It can suppress more effectively that a powdery solid is generated in the exhaust gas treatment device 20.
In the above example, the operation when the LPCVD apparatus 80 performs the film forming process has been described. However, when the LPCVD apparatus 80 performs the cleaning process, the exhaust gas processing system 110 operates similarly. This suppresses corrosion of the piping in the exhaust gas treatment device 20.

As described above, according to the exhaust gas treatment apparatuses of the first and second embodiments, even when oxygen or moisture is contained in the exhaust gas discharged from the LPCVD apparatus, It can suppress that exhaust gas reacts. Therefore, it is difficult for trouble to occur in the exhaust gas treatment apparatus. The maintenance frequency of the exhaust gas treatment apparatus can be reduced, and the manufacturing efficiency of the semiconductor element can be improved.
In the above-described embodiments, the exhaust gas treatment system for treating the exhaust gas of the LPCVD apparatus has been described. However, the present invention can be applied to the exhaust gas treatment systems of various semiconductor manufacturing apparatuses. For example, the present invention can be applied to other types of film forming apparatuses and treatment of exhaust gas from etching apparatuses.
In addition, the deoxygenation filter and dehumidification filter of the deoxygenation / dehumidification apparatus may be clogged with foreign matter. For this reason, you may install a foreign material removal filter in piping upstream from a deoxygenation and dehumidification apparatus. For example, a foreign substance removal filter can be installed in the pipe 70. Thereby, the foreign material in exhaust gas is removed and clogging of a deoxidation filter and a dehumidification filter can be prevented.

Specific examples of the present invention have been described in detail above, but these are merely examples and do not limit the scope of the claims. The technology described in the claims includes various modifications and changes of the specific examples illustrated above.
The technical elements described in this specification or the drawings exhibit technical usefulness alone or in various combinations, and are not limited to the combinations described in the claims at the time of filing. In addition, the technology illustrated in the present specification or the drawings achieves a plurality of objects at the same time, and has technical utility by achieving one of the objects.

1 is a block diagram showing a schematic configuration of an exhaust gas treatment system 10 of a first embodiment. 1 is a block diagram showing a schematic configuration of an exhaust gas treatment system 110 of a first embodiment.

Explanation of symbols

10, 110: Exhaust gas treatment system 20: Exhaust gas treatment device 30: Deoxygenation / dehumidification device 40, 42: Oxygen / water concentration detection device 50, 52: Switching valve 60: Control device 65: Pump 80: LPCVD device

Claims (3)

A removal device for removing at least one of oxygen and moisture from the exhaust gas discharged from the semiconductor manufacturing device;
An exhaust gas treatment device for treating the exhaust gas after passing through the removal device,
An exhaust gas treatment system for a semiconductor manufacturing apparatus. A first detection device for detecting at least one of oxygen concentration and moisture concentration in exhaust gas discharged from a semiconductor manufacturing device;
When the concentration detected by the first detection device is equal to or higher than the reference value, the exhaust gas is allowed to flow into the exhaust gas treatment device after passing through the removal device, and when the concentration detected by the first detection device is less than the reference value, A first path switching device that switches a flow path of exhaust gas so that the exhaust gas flows into the exhaust gas treatment device without passing through the removal device;
The exhaust gas treatment system according to claim 1, further comprising: A second detection device for detecting at least one of oxygen concentration and moisture concentration in the exhaust gas after passing through the removal device;
When the concentration detected by the second detection device is greater than or equal to the reference value, the exhaust gas that has passed through the removal device is allowed to pass through the removal device again. When the concentration detected by the second detection device is less than the reference value, the removal device A second path switching device for switching the flow path of the exhaust gas so that the exhaust gas after passing flows into the exhaust gas treatment device;
The exhaust gas treatment system according to claim 1, further comprising:

Images