JP2010140787A - Light emission device and manufacturing method thereof, and electronic device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emission device that can improve a viewing angle characteristic of an organic EL device, and to provide a manufacturing method thereof and an electronic device. <P>SOLUTION: An organic EL device includes a plurality of organic EL elements (8) each consisting of a pixel electrode (13), a light-emitting functional layer (18) and an opposite electrode (5). A plurality of resonators each consisting of a reflective layer (34) and an opposite electrode that serves as a semi-transparent and semi-reflective layer, correspond to these EL elements. A distinction is made between the organic EL elements for red, green and blue. Of them, there are two organic EL elements for green, wherein one organic EL element (8G1) corresponds to a pixel electrode (13G1) in the resonator, which has a thickness different from that of another pixel electrode (13G2) in the resonator, which corresponds to another organic EL element (8G2). Thereby, the two organic EL elements have different resonant object wavelengths. In this way, even if a so-called short wavelength shift occurs, the same green color as in directly facing can be recognized by a viewer. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a light emitting device including an organic EL (electro luminescent) element, a manufacturing method thereof, and an electronic device.

As a thin and light-emitting source, there is an organic light emitting diode (OLED), that is, an organic EL element. The organic EL element has a structure in which at least one organic thin film containing an organic material is sandwiched between a pixel electrode and a counter electrode. Among these, the pixel electrode functions as, for example, an anode, and the counter electrode functions as a cathode. When a current is passed between the two, recombination between electrons and holes occurs in the organic thin film, whereby the organic thin film or the organic EL element emits light. In this case, in order to emphasize only light having a specific wavelength among emitted light, the organic EL element may include a resonator structure including the pixel electrode and the counter electrode.
If a large number of such organic EL elements are arranged and light emission and non-light emission are appropriately controlled for each of them, an image having a desired meaning can be displayed. Further, if an organic thin film that emits colored light is used or an appropriate color filter is used, a color image can be displayed.
As such an organic EL element or an image display apparatus provided with the organic EL element, for example, one disclosed in Patent Document 1 is known.
JP 2008-91323 A

  By the way, the image display apparatus as described above has a problem regarding viewing angle characteristics. That is, for example, the color perceived by the viewer differs between when viewing the image display surface directly facing such an image display device and when viewing the image display surface obliquely. is there. More specifically, what originally should appear white appears to appear bluish white when facing the image display surface from an angle of 45 degrees. In general, when light having a certain wavelength is emitted from the image display surface, if it is viewed obliquely, it has the property of being visually recognized as light having a wavelength shorter than that wavelength (there is a short wavelength shift) )It has been known.

The above-mentioned patent document 1 discloses a technique for dealing with such a problem. That is, Patent Document 1 discloses a technique for changing “material and film thickness, or material or film thickness” of “semi-transmissive electrodes” constituting “organic EL elements having different emission colors” (Patent Document 1). [Claim 1]) Further, “the chromaticity shift from the front within a viewing angle of 45 degrees is <expression 1> Δu′v ′ <0.025 (where Δu′v ′ is the u′v ′ color). It is the distance between the chromaticity coordinates of the front view and the chromaticity coordinates of the oblique view in the degree diagram. ”(Patent Document 1 [Claim 4]). In this case, as a means for satisfying the above <Formula 1>, Patent Document 1 naturally places only in the eyes the “film thickness” of the “semi-transmissive electrode” or the like (claim 4 of Patent Document 1). ] Refers to the above-mentioned [Claim 1], [0044] and below, especially [0046] and the like).
However, there is a problem as to whether or not the viewing angle characteristics can be stably improved by simply adjusting the “film thickness” of the “semi-transmissive electrode”. For example, according to such a method, as a result of adjusting the film thickness in order to improve the viewing angle characteristics, it is not unlikely that the resonance performance is hindered or vice versa. In addition, in general, including the technical contents disclosed in Patent Document 1, in the case of manufacturing an organic EL element including the resonator structure, in order to form each layer having a different thickness, photolithography is used. Since the process is required for each layer, problems such as an increase in manufacturing cost or a decrease in yield occur.

An object of the present invention is to provide a light-emitting device, a manufacturing method thereof, and an electronic device that can solve at least a part of the above-described problems.
Another object of the present invention is to provide a light emitting device, a method for manufacturing the same, or an electronic device that can solve the problems that occur in the light emitting device, the method for manufacturing the electronic device, and the electronic device.

  In order to solve the above-described problems, a light-emitting device according to the present invention includes a substrate, a plurality of light-emitting elements that are arranged on the substrate according to a matrix-like arrangement, and constitute one pixel for each predetermined number, A reflective layer that is disposed on one side of the light emitting element as viewed along the normal direction of the substrate and reflects light emitted from the light emitting element, and the other of the light emitting element as viewed along the normal direction of the substrate A translucent semi-reflective layer that reflects part of the light and transmits the other part, and the reflective layer and the semi-transparent semi-reflective layer are provided on each of the plurality of light emitting elements. And a plurality of resonators configured to resonate light having a specific wavelength among the light, wherein at least one of the plurality of pixels is between the reflective layer and the translucent semi-reflective layer. The optical distance matches the first optical distance; Including at least a resonator and a resonator having a second optical distance different from the first optical distance, and the pixel corresponds to two resonators having the first and second optical distances. The first color is expressed by the first and second light emitting elements.

According to the present invention, for example, four “light emitting elements” “constitute one pixel”. In this case, each of the at least two light emitting elements among the four light emitting elements corresponds to the aforementioned “first and second light emitting elements”. Accordingly, each of these two light emitting elements corresponds to “two resonators”, and these two resonators have “first optical distance” and “second optical distance”, respectively. In this case, since the first and second optical distances are different from each other, the wavelengths to be resonated are different in each of the two light emitting elements or the two resonators. That is, each of the light emitted from these two light emitting elements has a different color, strictly speaking.
However, these two light emitting elements also simultaneously “represent the first color”, which is one color. Here, “express” means that, for example, when the viewer visually recognizes the light emitted from these two light emitting elements, the visual ability is limited (for example, the spatial resolution of the human eye). It means that it recognizes not one color but one synthesized color.
Even in the present invention having such a configuration, when the viewer faces the light emitted from the two light emitting elements from an oblique direction, the phenomenon of “short wavelength shift” described above also occurs. However, in the present invention, in this case, since the first and second optical distances are different from each other, the hue of the light synthesized from the light emitted from the two light emitting elements is not changed eventually. It is possible to In other words, if the angle at which the viewer faces such combined light is changed, the wavelength component of each light that forms the combined light is different before and after that, but eventually the same color is recognized. It becomes possible.
In this way, according to the present invention, the aforementioned viewing angle characteristics can be improved.

  The specific structure and material of the “light emitting element” in the present invention can be basically determined freely. For example, an element in which a light emitting layer made of an organic EL material or an inorganic EL material is interposed between electrodes. The light emitting device of the present invention can be employed. Furthermore, various light emitting elements such as an LED (Light Emitting Diode) element and an element that emits light by plasma discharge can be used in the present invention.

In the light emitting device of the present invention, the pixel includes a third light emitting element that expresses a second color and a fourth light emitting element that expresses a third color, in addition to the first and second light emitting elements. You may comprise so that it may be included.
According to this aspect, “one pixel” is composed of four light emitting elements “first light emitting element” to “fourth light emitting element”. Of these, the “first and second light emitting elements” are “first color”, the “third light emitting element” is “second color”, and the “fourth light emitting element” is “third color”. "Is responsible for each. Here, each of the “first color” to the “third color” is preferably red, green, and blue, for example.
After all, according to this aspect, it is possible to display a suitable color image (in particular, the viewing angle characteristics are improved) with “one pixel” by such four light emitting elements as one unit. It becomes.

In this aspect, the third optical distance of the resonator corresponding to the third light emitting element is different from both the first and second optical distances, and the resonator corresponding to the fourth light emitting element is The fourth optical distance may be different from any of the first, second, and third optical distances.
According to this aspect, each of the four resonators corresponding to each of the aforementioned four light emitting elements has an optical distance different from each other. Thus, typically, for example, a resonator corresponding to the third light emitting element has an optical distance that enhances the second color, and a resonator corresponding to the fourth light emitting element emphasizes the third color. A configuration such as having an optical distance is taken.
As a result, each light-emitting element constituting “one pixel” emits light in which the color (wavelength) shared by each light-emitting element is emphasized, so that a color image richer in color is displayed. Is possible.

In the aspect including the “third light emitting element” and the “fourth light emitting element”, the third optical distance is represented by (OT1 + OT2 + OT3 + G) [nm] (OT1, OT2, OT3, and G are positive real numbers). The fourth optical distance is expressed by (OT3 + G) [nm], and the first optical distance is (OT1 + OT2 + G) [nm], (OT2 + OT3 + G) [nm] and (OT3 + OT1 + G) [nm]. And the second optical distance is any one of (OT1 + OT2 + G) [nm], (OT2 + OT3 + G) [nm], and (OT3 + OT1 + G) [nm]. You may comprise so that it may be represented by what does not represent the said 1st optical distance.
According to this aspect, when the first optical distance is expressed by, for example, OT1 + OT2 + G, the second optical distance is expressed by OT2 + OT3 + G (Example 1) or OT3 + OT1 + G (Example 2), or alternatively, When the first optical distance is expressed as OT2 + OT3 + G, the second optical distance is expressed as OT1 + OT2 + G (example 3) or OT3 + OT1 + G (example 4). In these cases, in the present invention, since it is premised that the first and second optical distances are different from each other, OT1 ≠ OT3 in Example 1 and Example 3, and OT2 ≠ OT3 in Example 2 are examples. 4 holds OT1 ≠ OT2 (in other words, in Example 1 and Example 3, for example, OT2 = OT3, etc., in Example 2, for example, OT1 = OT2, etc., in Example 4, for example, OT2 = OT3, etc. Each may hold).
In this aspect, it is OTn (n = 1, 2, 3) that determines the substance of the first to fourth optical distances, and G is common to each optical distance. Therefore, for example, OTn is a film thickness of a variable optical distance adjustment layer or the like for each resonator corresponding to each of these optical distances, and G is a light emitting functional layer (a light emitting element that is common to each resonator). ) Or the like.
As described above, according to this aspect, since the first to fourth optical distances are preferably set, the effect according to the present invention described above, that is, the improvement of the viewing angle characteristic is more effectively achieved. In particular, this aspect is closely related to a “manufacturing method” according to the present invention to be described later, and has effects such as improvement in manufacturing yield and reduction in manufacturing cost (this point will be touched on later). ).

In the aspect including the “third light emitting element” described above, the pixel corresponding to the third light emitting element includes the third light emitting element in order to represent the second color. A fifth light emitting element corresponding to a resonator having an optical distance different from the optical distance may be further included.
According to this aspect, the effect exerted by the expression “first color” by the “first and second light emitting elements” described above is also enjoyed for the “second color”. That is, in this aspect, since the “second color” is also expressed by both the “third light emitting element” and the “fourth light emitting element”, the light emitted from these two light emitting elements is shifted by a short wavelength. Even so, the combined light can still be “represents the second color” (in this case, “one pixel” includes at least five light emitting elements). become.).
In addition, in order to express the third color in addition to the configuration according to this aspect in some cases, in addition to the fourth light emitting element, in addition to the fourth light emitting element, the fourth light emitting element may be further expanded. Although the aspect which further contains the 6th light emitting element corresponding to the resonator which has an optical distance different from the optical distance which the said said corresponding resonator has is also envisaged, of course, this invention relates to this aspect. (In this case, “one pixel” includes at least six light-emitting elements).

In the light emitting device of the present invention, the first color may include green.
According to this aspect, the above-described effect according to the present invention is enjoyed for “green”. In general, the green wavelength is closer to the red wavelength and farther to the blue wavelength with respect to its length. In addition, for example, when the light-emitting element is composed of an organic EL element, the emission spectrum of the light-emitting layer is often disadvantageous for green display (see FIG. 7 to be described later and the description in the embodiment, reference). For this reason, when the viewing angle characteristic is deteriorated due to the short wavelength shift described above, the (bad) influence may be greatest for green rather than red / blue.
Against this background, it can be said that the present aspect in which “green” is included in the “first color” is one of the aspects in which the effect according to the present invention can be most effectively enjoyed.

In the light emitting device of the present invention, the light emitting element is sandwiched between the first and second electrode layers and the first and second electrode layers stacked along the normal direction, and emits the light. A light emitting functional layer, wherein at least one of the first and second electrode layers is disposed between the reflective layer and the translucent semi-reflective layer, and the first and second optical distances are the first or second optical distance, You may comprise so that it may differ according to the difference in the film thickness of a 2nd electrode layer.
According to this aspect, since “at least one of the first and second electrode layers” is disposed between the reflective layer and the translucent semi-reflective layer, the electrode layer is, so to speak, a part of the “resonator”. It can be said that it constitutes a part. In this aspect, the difference in the “first and second optical distances” described above is the difference in the “film thickness of the first or second electrode layer” disposed between the reflective layer and the translucent semi-reflective layer. Has come to be brought by.
Thus, according to this aspect, the setting of the first and second optical distances or the configuration of the two resonators is performed depending on the film thickness of the first or second electrode layer. In addition, since the adjustment of the film thickness can be realized relatively easily through adjustment of the film forming conditions, the setting or configuration can be performed relatively easily.
In addition, the “light emitting functional layer” referred to in this embodiment includes all or part of a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like starting with the light emitting layer.

In this aspect, at least one of the reflective layer and the translucent semi-reflective layer may be configured to also serve as at least one of the first and second electrode layers.
According to this aspect, for example, the “semi-transparent semi-reflective layer” constituting the resonator also serves as the “second electrode layer” constituting the light-emitting element. In other words, in this case, both physically form one layer, but functionally, two functions of one mirror constituting the resonator and an electrode for supplying current to the light emitting functional layer. Have both.
As described above, according to this aspect, since one layer has a plurality of functions, the device structure or the simplification / rationalization / efficiency of the manufacture thereof can be realized.

In the aspect including the “third light emitting element” and the “fourth light emitting element”, the third and fourth light emitting elements have substantially the same area in plan view, and the first and second light emitting elements have the same area. The light emitting element may be configured to have substantially half the area compared to the third and fourth light emitting elements.
According to this aspect, the area (or their relationship) of the first to fourth light emitting elements in a plan view is suitably set, so that higher quality image display can be performed. That is, as described above, each of the third and fourth light emitting elements is responsible for one color, and each of the first and second light emitting elements is responsible for one color. In view of the typical example, the latter area is preferably half of the former area from the viewpoint of the total light emission amount (or the total amount of light reaching the eyes of the viewer). This embodiment is just an embodiment referring to such an example.
Note that the “area” of a light-emitting element means the area of a region that emits light on the light-emitting element or the area (effective area) of a region that emits light that can finally reach a viewer. . More specific examples of this point will be described with reference to, for example, [FIG. 3] and [FIG. 4] in the embodiments described later.

In this aspect, the first and second light emitting elements may be arranged so as to be sandwiched between the third and fourth light emitting elements in plan view.
According to this aspect, it is possible to display a higher quality image by suitably setting the arrangement relationship of the first to fourth light emitting elements in a plan view. In particular, the arrangement mode according to this mode (hereinafter referred to as “first arrangement mode” particularly in the section of “Means for Solving the Problems”) is used to display still images such as characters by a plurality of “pixels”. It is suitable to be applied when displaying.

In this aspect, in plan view, the first light emitting element is arranged next to the third light emitting element, the second light emitting element is arranged next to the fourth light emitting element, and the first light emitting element is arranged. The light emitting element may be arranged next to the fourth light emitting element.
According to this aspect, the arrangement of the third, first, fourth, and second light emitting elements is realized sequentially from one end. Of these, the first and second light emitting elements each have only half the area of each of the third and fourth light emitting elements, as described above. According to such an arrangement mode (hereinafter referred to as “second arrangement mode” particularly in the section of “Means for Solving the Problems”), the first and second light emitting elements are separated. For example, when displaying a still image such as a character or when displaying a moving image, the contour of the character or the motion of a moving image can be expressed more smoothly. Increases nature.

In this aspect, each of the first light emitting element pair, the third light emitting element, and the fourth light emitting element is arranged so as to occupy the apex of the triangle in plan view. You may comprise as follows.
According to this aspect, it is possible to display a higher quality image by suitably setting the arrangement relationship of the first to fourth light emitting elements in a plan view. In particular, the arrangement relationship according to this aspect is preferably applied when a moving image is displayed by a plurality of “pixels”.

In addition, this invention includes also in the range, when combining the above-mentioned three arrangement | sequence aspects suitably. For example, one pixel having the first arrangement mode described above and one pixel having the second arrangement mode are alternately arranged.
Moreover, it goes without saying that the present invention includes various modes in which the first to fourth light emitting elements are arranged in modes other than those described above.

Moreover, in order to solve the said subject, the electronic device of this invention is equipped with the various light-emitting devices mentioned above.
According to the present invention, since the above-described various light emitting devices, that is, the light emitting device that expresses the first color as one color by the first and second light emitting elements, the viewing angle characteristics are improved. An electronic device such as an image display device is provided.

  On the other hand, in order to solve the above-described problem, the method for manufacturing a light-emitting device according to the present invention includes four optical resonators corresponding to each of the four light-emitting elements and each of the first to fourth positions on the substrate. A method of manufacturing a light emitting device, wherein the first layer has a first layer, a first layer, a first layer, a first layer, a first layer, and a first layer. The “A-B layer” means the B layer at the A position). The first optical distance adjusting layer is formed by sequentially forming the first optical distance adjusting layer; Simultaneously with the step of forming any one of the 1-1 layer, the 1-2 layer, and the 1-3 layer, the second optical layer is formed by forming the 2-1 layer and the 2-2 layer. A step of forming a distance adjusting layer; and at the third position, any one of the first, first, first, second, and first-3 layers (however, in the two layers) Includes a layer that is not formed at the same time as the 2-1 layer and the 2-2 layer.) And a third layer by forming a 3-1 layer and a 3-2 layer at the same time as the forming step. Simultaneously with the step of forming the optical distance adjustment layer and the step of forming the first-3 layer at the fourth position, the fourth optical distance adjustment layer is formed by forming the 4-1 layer. A resonator forming step of forming the four optical resonators including the first, second, third and fourth optical distance adjustment layers.

According to the present invention, among the various aspects of the light-emitting device according to the present invention described above, a light-emitting device in which one pixel includes first to fourth light-emitting elements (or, in particular, each of the light-emitting elements). The light emitting device including a resonator having first to fourth optical distances corresponding to the above can be suitably manufactured.
That is, according to the manufacturing method of the present invention, when the first, second, and third film thicknesses are OT1, OT2, and OT3 (OT1, OT2, and OT3 are positive real numbers), respectively, The film thicknesses of the four optical distance adjustment layers are (OT1 + OT2 + OT3) [nm] and OT3 [nm], respectively. The film thickness of the second optical distance adjustment layer is any one of (OT1 + OT2) [nm], (OT2 + OT3) [nm], and (OT3 + OT1) [nm], while the third optical distance adjustment is performed. The thickness of the layer is any one of (OT1 + OT2) [nm], (OT2 + OT3) [nm] and (OT3 + OT1) [nm], and is not the thickness of the second optical distance adjustment layer, It turns out that. The relationship between the values of OT1 to OT3 is the same as the relationship between the values of OT1 to OT3 described above.
Here, each of the “first to fourth positions” in the present invention means different positions that can be identified on the substrate surface. Therefore, for example, “to form the 2-2 layer in the second position” means that the second position on the substrate surface is determined by a predetermined patterning process or the like to distinguish from a position other than the second position. It is implied that a process for forming an island-like layer is performed.
As described above, according to the present invention, in the present invention, more types of optical distance adjustment layers (and thus more types of optical resonators) are formed through less patterning processing and the like. Because each of the 2-1 layer, the 2-2 layer, the 3-1 layer, the 3-2 layer, and the 4-1 layer on the second to fourth positions is eventually the 1-1 layer, Since the three layers of the first and second layers and the first and third layers are formed, it is sufficient to perform the patterning process three times. This is because an optical distance adjusting layer having a film thickness is formed.
Therefore, according to the present invention, the optical distance adjustment layer, the substrate, or the like is less likely to be damaged by the patterning process or the like, and an improvement in manufacturing yield is realized. In addition, the need for patterning or the like is naturally reduced, and the manufacturing cost can be reduced.

In the method for manufacturing a light emitting device according to the present invention, a step of forming a resist as an upper layer of the 2-1 layer, the 2-2 layer, the 3-1 layer, or the 3-2 layer; A step of removing together with the resist a layer formed simultaneously with the step of forming any one of the −2 layer and the 1-3 layer and formed as an upper layer of the resist; You may comprise so that it may be included.
According to this aspect, the above-described manufacturing method is better performed. Therefore, according to this aspect, the effects according to the present invention described above, that is, the production yield can be improved or the production cost can be reduced more effectively.
In this regard, more specific examples will be described in the embodiments described later with reference to, for example, [FIG. 13] to [FIG. 16].

In the method for manufacturing a light emitting device of the present invention, a step of forming first and second electrode layers at the first to fourth positions on the substrate, and a light emitting function between the first and second electrode layers. Forming a light emitting element, and the first, second, third and fourth optical distance adjustment layers are formed of the first and second electrode layers. You may comprise so that it may serve as at least one.
According to this aspect, for example, the first to fourth optical distance adjustment layers also serve as the first electrode layer. As soon as the former is formed, the latter is also formed (reversely Therefore, the light-emitting device can be manufactured more simply, more efficiently, and more reasonably.

In this aspect, the resonator forming step further includes a step of forming a reflective layer that reflects the light emitted from the light emitting element on the substrate, and a portion that reflects a part of the light on the substrate. Forming a translucent semi-reflective layer that transmits light, wherein at least one of the reflective layer and the semi-transparent semi-reflective layer also serves as at least one of the first and second electrode layers. May be.
According to this aspect, for example, the first to fourth optical distance adjustment layers also serve as the first electrode layer, and the translucent semi-reflective layer also serves as the second electrode layer. Simplification, efficiency, and rationalization of the light emitting device manufacturing process become more effective.

<Configuration of organic EL device>
Hereinafter, an embodiment according to the present invention will be described with reference to FIGS. In addition to FIGS. 1 to 4 mentioned here, in each drawing referred to below, the ratio of the dimensions of each part may be appropriately different from the actual one.

  As shown in FIG. 1, the organic EL device includes an element substrate 7 and various elements formed on the element substrate 7. The various elements are the organic EL element 8, the scanning line 3 and the data line 6, the scanning line driving circuits 103A and 103B, and the data line driving circuit 106.

A plurality of organic EL elements (light emitting elements) 8 are provided on the element substrate 7 as shown in FIG. 1 or FIG. The plurality of organic EL elements 8 are arranged in a matrix. Each of the organic EL elements 8 includes a pixel electrode 13, a light emitting functional layer, and a counter electrode. Details of each of these elements will be mentioned later.
The image display area 7 a is an area where the plurality of organic EL elements 8 are arranged on the element substrate 7. In the image display area 7 a, a desired image can be displayed based on individual light emission and non-light emission of each organic EL element 8. Hereinafter, the area excluding the image display area 7a on the surface of the element substrate 7 is referred to as a “peripheral area”.

  The scanning lines 3 and the data lines 6 are arranged so as to correspond to the respective rows and columns of the organic EL elements 8 arranged in a matrix. More specifically, as shown in FIG. 1, the scanning line 3 extends in the left-right direction in the drawing and is connected to scanning line driving circuits 103A and 103B formed on the peripheral region. On the other hand, the data line 6 extends along the vertical direction in the drawing and is connected to the data line driving circuit 106 formed on the peripheral region. A unit circuit (pixel circuit) P including the organic EL element 8 and the like described above is provided in the vicinity of each intersection of the scanning lines 3 and the data lines 6.

As shown in FIG. 2, the unit circuit P includes the organic EL element 8 described above, and also includes an n-channel first transistor 68, a p-channel second transistor 9, and a capacitor element 69.
The unit circuit P receives power from the current supply line 113. The plurality of current supply lines 113 are connected to a power source (not shown).
The source electrode of the p-channel type second transistor 9 is connected to the current supply line 113, and the drain electrode thereof is connected to the pixel electrode of the organic EL element 8. A capacitive element 69 is provided between the source electrode and the gate electrode of the second transistor 9. On the other hand, the gate electrode of the n-channel first transistor 68 is connected to the scanning line 3, its source electrode is connected to the data line 6, and its drain electrode is connected to the gate electrode of the second transistor 9.
In the unit circuit P, when the scanning line driving circuits 103A and 103B select the scanning line 3 corresponding to the unit circuit P, the first transistor 68 is turned on, and the data signal supplied via the data line 6 is transferred to the internal circuit P. It is held in the capacitor element 69. Then, the second transistor 9 supplies a current corresponding to the level of the data signal to the organic EL element 8. As a result, the organic EL element 8 emits light with a luminance corresponding to the level of the data signal.

  In the above description, an example in which all of the scanning line driving circuits 103A and 103B and the data line driving circuit 106 are formed on the element substrate 7 has been described. It may be formed on a flexible substrate. In this case, by providing appropriate terminals at both contact portions between the flexible substrate and the element substrate 7, electrical connection between the two can be achieved.

  An organic EL device having the above-described configuration when viewed in plan includes a stacked structure 250 as shown in FIG. As shown in FIG. 4, the laminated structure 250 includes a circuit element thin film 11, an interlayer insulating film 302, a reflective layer 34, a pixel electrode 13, a light emitting function layer 18, In addition, the counter electrode 5 and the like are included.

Among these, the interlayer insulating film 302 contributes to prevent a short circuit between the remaining conductive elements, or to realize a suitable arrangement of the conductive elements in the stacked structure 250. The interlayer insulating film is not necessarily provided as a single layer in the laminated structure 250, and may be made of various insulating materials with various thicknesses. Preferably, the interlayer insulating film is disposed in the laminated structure 250. An appropriate thickness and material may be appropriately selected according to the position, role, and the like.
More specifically, for example, the interlayer insulating film 302 is preferably made of SiO ₂ , SiN, SiON, or the like.

  The circuit element thin film 11 includes the first transistor 68 and the second transistor 9 included in the unit circuit P described above. Although the circuit element thin film 11 is drawn in a very simplified manner in the figure, the circuit element thin film 11 is composed of a semiconductor layer, a gate insulating film, a gate metal, etc. constituting these various transistors and an electrode thin film (capacitor element 69). (Not shown) and other metal thin films. In the laminated structure 250 shown in FIG. 4, the above-described scanning line 3 and data line 6 are naturally constructed, but illustration thereof is omitted.

The reflective layer 34 is formed on the above-described interlayer insulating film 302. The reflective layer 34 reflects light emitted from the light emitting functional layer 18. The reflected light travels upward in the figure as shown in FIG. Thus, since the light emitted from the light emitting functional layer 18 travels to the side opposite to the side where the element substrate 7 exists, the organic EL device 100 of this embodiment is a so-called top emission type. It is. For this reason, the element substrate 7 does not necessarily need to be made from a translucent material, and may be made from an opaque material such as ceramics or metal (in contrast, in the case of the bottom emission type, the element substrate 7 must be made of a light transmissive material).
Such a reflective layer 34 is preferably made of a material having a relatively high light reflection performance in order to better exhibit the above-described reflection function. For example, aluminum or silver can be used.

  On the other hand, each of the organic EL elements 8 includes a pixel electrode 13, a light emitting functional layer 18, and a counter electrode 5 among the above-described various elements constituting the stacked structure 250, as shown in FIG. 4. .

Among these, the pixel electrodes 13 are formed on the element substrate 7 so as to be arranged in a matrix. The fact that the organic EL elements 8 are arranged in a matrix corresponds to the fact that the pixel electrodes 13 are arranged in a matrix as described above (see FIG. 3). In addition, the above-described reflective layer 34 is also arranged in a matrix in the same meaning (see FIG. 4). In the present embodiment, there is a feature in the arrangement mode, area, or film thickness of the pixel electrodes 13 or the organic EL elements 8 in this plan view, but this point will be described later.
The pixel electrode 13 is electrically connected to the circuit element thin film 11 through the contact hole 363. Thereby, the pixel electrode 13 can apply the current supplied from the second transistor 9 shown in FIG. 2 to the light emitting functional layer 18. The contact hole 363 is formed so as to penetrate the interlayer insulating film 302.
Such a pixel electrode 13 is made of, for example, an ITO (Indium Tin Oxide) single layer film, or a conductive film such as a very thin aluminum (Al), silver (Ag), or a laminated film of Ag and ITO. Made from.

As shown in FIG. 3 or FIG. 4, the partition layer 340 is formed in a region between the pixel electrodes 13 adjacent to each other in the plan view among the pixel electrodes 13 as described above. The partition layer 340 plays a role of partitioning each organic EL element 8. Note that the partition layer 340 constitutes a part of the interlayer insulating film 304.
Such a partition layer 340 is preferably made of, for example, an insulating transparent resin material.
The partition layer 340 is also generally referred to as “bank” in some cases.

As shown in FIG. 4, the light emitting functional layer 18 is formed on the pixel electrode 13 so as to cover the entire surface of the element substrate 7.
The light emitting functional layer 18 includes at least an organic light emitting layer. The organic light emitting layer is composed of an organic EL material that emits light when excitons generated by recombination of holes and electrons transition to the ground state. In FIG. 4, the light emitting functional layer 18 emits white light uniformly.
When the above-mentioned organic EL substance is, for example, a low-molecular material, the organic EL substance can be formed by a vapor deposition method such as a sputtering method, a PVD (Physical Vapor Deposition) method, a CVD (Chemical Vapor Deposition) method, or the like. . According to this, the light emitting functional layer 18 can be easily formed as if covering the entire surface of the element substrate 7 as described above or illustrated.
As other layers constituting the light-emitting functional layer 18, part or all of an electron block layer, a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and a hole block layer may be provided.

As shown in FIG. 4, the counter electrode 5 is in contact with the light emitting functional layers 18 of the plurality of organic EL elements 8. The counter electrode 5 is formed in a rectangular shape as if covering the entire surface of the element substrate 7 in plan view (a part of which is shown in FIG. 4).
Such a counter electrode 5 is made of, for example, an alloy such as MgAl, MgCu, MgAu, MgAg, or a metal material. In addition, the counter electrode 5 has a thickness such as a thickness of about 5 to 20 [nm] so that a part of the light reaching the counter electrode 5 can pass therethrough. Thereby, the counter electrode 5 is provided with translucent semi-reflective performance.

In the present embodiment, the partition 340 is formed so that the light emitting functional layer 18 covers the entire surface of the element substrate 7 as described above, and emits white light uniformly over the entire surface. It is not always necessary to provide it. However, such a partition wall 340 may be inevitably formed as a result of performing film formation for the purpose of filling a contact hole or the like appropriately formed in the interlayer insulating film 302, for example (this may cause an element The surface of the laminated structure on the substrate 7 can be flattened).
In addition, such a partition 340 can be expected to exhibit a function of regulating the light emitted from the light emitting functional layer 18 from traveling in the direction of the adjacent organic EL element 8 (for example, the light is When traveling to the adjacent organic EL element 8, there is a case where the light passes through the partition wall 340, and in this case, the energy of the light is reduced by at least the amount corresponding to the transmission). In that sense, it can be said that the partition 340 is useful.

  In addition to the stacked structure 250 described above, in FIG. 4, the organic EL device 100 includes a counter substrate 50, and further includes a stacked structure different from the above on the counter substrate 50. As shown in FIG. 4, the stacked structure includes a color filter 51 and a light shielding film 591 in order from the counter substrate 50 toward the lower side in the drawing.

First, the counter substrate 50 is made of a translucent material such as glass, quartz, or plastic.
The color filter 51 is formed in an area corresponding to the formation area of the pixel electrode 13 in plan view. The color filter 51 includes a red filter 51R, green filters 51G1 and 51G2, and a blue filter 51B. These color filters (51R, 51G1, 51G2, and 51B) are arranged in a matrix, but in this embodiment, they are arranged in an arrangement mode that matches the arrangement mode of pixel electrodes 13 and the like that will be described later. This point will be described later.
The color filter 51 transmits only light in a predetermined wavelength region out of light reaching from the light emitting functional layer 18. That is, for example, the red filter 51R transmits, for example, light having a peak wavelength of 610 nm and its nearby wavelength band, and the green filters 51G1 and 51G2 transmit light having a peak wavelength of 520 nm and its nearby wavelength band, and the blue filter 51B. Transmits light having a peak wavelength of 470 nm and a wavelength region in the vicinity thereof.
Such a color filter 51 is made of a light transmissive resin material or the like. The resin material can include pigments corresponding to the respective colors.

The light shielding film 591 is formed so as to border the formation region of the pixel electrode 13 in plan view or to correspond to a region other than the formation region. Alternatively, in terms of only the elements on the counter substrate 50 side, the light shielding film 591 is formed so as to fill the gaps between the color filters 51 arranged in a matrix.
Such a light-shielding film 591 is made of an appropriate light-shielding material such as a light-absorbing or light-reflecting metal or resin. If a metal material is specifically illustrated, Cr etc. are mentioned suitably.

  The filler 60 fulfills the function of bonding between the counter substrate 50 and the element substrate 7 described above (see FIG. 4). The filler 60 is made of a material such as an epoxy resin.

<Organic EL elements, pixel electrodes, etc.>
In addition to the above, the organic EL device 100 of the present embodiment is particularly characterized in the configuration of the organic EL element 8 among the various elements described above, particularly the configuration and operation of the pixel electrode 13 and the like. Hereinafter, this point will be described with reference to FIGS. 5 to 8 in addition to FIGS. 1 to 4 already referred to.

First, in the present embodiment, as shown in FIG. 3, one pixel Px is configured with four organic EL elements 8 as one set. The four organic EL elements 8 in the pixel Px do not have the same area as shown in FIGS. 3 and 4. This is shown relatively well in FIG. 3, and in plan view, the leftmost organic EL element 8R and the rightmost organic EL element 8B have the same area, and both these organic EL elements The two organic EL elements 8G1 and 8G2 sandwiched between 8R and 8B have about half the area.
The “area” here is more generally the area of a region where light is emitted on the organic EL element 8, or the light that can finally reach the viewer on the organic EL element 8. Means the area (effective area) of the region where In the present embodiment, the “region” referred to here has an oval shape as shown in FIG. Basically, the pixel electrode 13, the reflective layer 34, and the interlayer insulating film 304 can be arbitrarily set by appropriately determining all or part of the formation form. For example, if each pixel electrode 13 is formed so as to have an oval shape in plan view, the oval shape is basically between the pixel electrode 13 and the counter electrode 5. In this case, the “area” of the organic EL element 8 is the “oval-shaped area” because recombination of electrons and holes occurs only in the column having the bottom surface of It is almost synonymous, or at least a value determined based on it.

The aforementioned color filter 51 is arranged corresponding to each of the four organic EL elements 8 as described above. That is, the red filter 51R is provided for the leftmost organic EL element 8R in FIG. 3, the green filter 51G1 is provided for the right organic EL element 8G1, and the organic EL element 8G2 is also adjacent to the right. The green filter 51G2 and the blue filter 51B correspond to the rightmost organic EL element 8B (see also FIG. 4). In this case, the green filters 51G1 and 51G2 correspond to the two organic EL elements 8G1 and 8G2, but as described later, the green color to be expressed in the one pixel Px is the two organic EL elements. This is expressed by the joint action of the EL elements 8G1 and 8G2.
The already used reference numerals 8R, 8G1, 8G2, and 8B (or 13R, 13G1, 13G2, and 13B) shown in FIGS. 3 and 4 are different from the color filters (51R, 51G1, 51G2, and 51B). It has a corresponding meaning. In the description of the present embodiment and other drawings, for the sake of simplicity, the reference numeral “8” is a generic name for the aforementioned reference numerals 8R, 8G1, 8G2, and 8B, and the reference numeral “13” is the aforementioned reference numerals 13R, 13G1. , 13G2, and 13B are used as generic names.

In response to the organic EL elements 8 being arranged in the manner as described above, the pixel electrodes 13 are also arranged in the same manner (see FIG. 3).
In addition, the four pixel electrodes 13R, 13G1, 13G2, and 13B existing in one pixel Px have the following characteristics. That is, as shown in FIG. 4, when the film thicknesses of these pixel electrodes (13R, 13G1, 13G2, and 13B) are D1, D2, D3, and D4, D1>D2>D3> D4 is established therebetween. To do. That is, the pixel electrode 13R corresponding to the red filter 51R is the thickest, and the pixel electrode 13B corresponding to the blue filter 51B is the thinnest. The pixel electrodes 13G1 and 13G2 corresponding to the green filters 51G1 and 51G2 have a film thickness between them, but as shown in FIG. 4, the pixel electrode 13G1 is thicker than the pixel electrode 13G2.
For this reason, the optical distance between the reflective layer 34 and the counter electrode 5 for the organic EL element 8 in a certain pixel Px differs for each organic EL element 8.

The optical distance is defined by the refractive index and physical thickness of each layer. That is, assuming that the refractive index and physical thickness of the pixel electrode 13 are n1 and l1, and those of the light emitting functional layer 18 are n2 and l2, the optical distance L is
L = Σ (np · lp) (1)
It is expressed. In this equation, “Σ” is a symbol representing the sum of np · lp when p = 1 and 2 are sequentially set. Note that the shape of the formula (1) does not change even when the light emitting functional layer 18 includes a hole transport layer, an electron transport layer, and the like (in place of the n2 and l2, the refractive index and physical thickness thereof). Then, the total sum may be obtained as new n2, l2, n3, l3,.
In the present embodiment, this optical distance L also satisfies the condition represented by the following equation.
L = {(2πN + θ1 + θ2) · λ} / (4π) (2)
However, in this equation, θ1 is the amount of phase change in the reflective layer 34 (more precisely, the amount of phase change at the interface between the reflective layer 34 and the pixel electrode 13), and θ2 is the amount of phase change in the counter electrode 5 (more precisely). Is a phase change amount at the interface between the counter electrode 5 and the light emitting functional layer 18, λ is a resonance target wavelength, and N is an appropriate integer (this N is usually set as a relatively small value, for example, 1 or the like). )
From the above two formulas, the organic EL device 100 of this embodiment includes a kind of optical resonator. That is, the intensity of light having a specific wavelength component (the resonance target wavelength λ) is set by appropriately setting the optical distance between the reflective layer 34 and the counter electrode 5 serving as a semitransparent semireflective layer. Is increased.

The film thicknesses of the pixel electrodes 13R, 13G1, 13G2, and 13B are different from each other in order to satisfy the conditions related to the above-described equations (1) and (2) with respect to the resonance target wavelength λ of interest. In particular, it has a purpose. For example, the pixel electrode 13R has a film thickness D1 for emphasizing light having a peak wavelength of 610 nm and its vicinity, and the pixel electrode 13B is for enhancing light having a peak wavelength of 470 nm and its vicinity. Each has a film thickness D4.
What is characteristic here is that the film thicknesses of the pixel electrodes 13G1 and 13G2 corresponding to the green filters 51G1 and 51G2 are different. In this case, it can be said that both have film thicknesses (D2, D3) for emphasizing light having a peak wavelength of 520 nm and a wavelength region in the vicinity thereof, but the values of these film thicknesses are different (D2 ≠ Strictly speaking, the two optical resonators including each of the pixel electrodes 13G1 and 13G2 have different wavelengths to be resonated. That is, each of the light emitted from each of the organic EL elements 8G1 and 8G2 has a different color, strictly speaking.

According to the organic EL element 8, the pixel electrode 13, or the pixel Px having such a configuration, the following effects can be obtained.
First, FIG. 5 (or FIG. 8) will be described as a premise for explanation.
FIG. 5 (or FIG. 8) is a so-called xy chromaticity diagram. In this figure, a region enclosed in a generally bullet-like shape represents a color range (color gamut) that can be recognized by humans. The saturation increases from the vicinity of the center of the region to the periphery. A numerical value surrounding the area represents a hue.
On the other hand, a region surrounded by a triangle in the region represents a color gamut that can be expressed in the RGB color system. Among these points, the points marked with Ct are white points. In addition, characters such as “red”, “green” and the like shown in the drawing represent general color names that a viewer will feel when recognizing the color of the place where the character is located. For example, when a viewer recognizes a color around x = 0.2 and y = 0.1, the person has a high probability of judging it as “blue”.

Under such a premise, first, FIG. 5 represents a case where the image display region 7a is directly viewed facing the organic EL device 100. Here, points G1 and G2 shown in FIG. 5 correspond to the difference in film thickness of the pixel electrodes 13G1 and 13G2. That is, as described above, by D2> D3 is satisfied between the pixel electrodes 13G1 and 13G2 each thickness D2 and D3, the organic EL elements 8G1 and 8G2 include both, respectively, the resonance wavelength of interest lambda _G1 And λ _G2 (where λ _G1 > λ _G2 ), that is, light having a color corresponding to the points G1 and G2.
However, when the viewer visually recognizes the light emitted from these two organic EL elements 8G1 and 8G2, it is not two colors because of restrictions on the visual ability (for example, spatial resolution of the human eye). Recognize one color that is synthesized. That is, as shown in FIG. 5, the color of the point VC, which is the midpoint of the line segment connecting the points G1 and G2, is recognized.

On the other hand, as shown in FIG. 6, the viewer E faces the organic EL device 100 from an oblique direction (in FIG. 6, the direction of the angle φ with respect to the normal direction of the element substrate 7 or the counter substrate 50). When the image display area 7a is visually recognized, a so-called “short wavelength shift” occurs.
Temporarily, the green color in one pixel Px is not expressed by the two organic EL elements 8G1 and 8G2 as in the present embodiment, but is expressed by one organic EL element and corresponds to it. Assuming that the optical distance of the optical resonator is determined by the above formulas (1) and (2) on the premise that the resonance target wavelength is 520 nm, the viewer is pointed as in FIG. Recognize light having a color corresponding to VC. However, when viewing from an oblique direction as shown in FIG. 6, the viewer recognizes light having a color corresponding to the point VS where the point VC in FIG. 8 is shifted to the short wavelength side. That is, in this case, the viewer E recognizes different shades depending on whether he or she is facing the front.

Such a defect is particularly serious with respect to green.
This is because the green peak wavelength is nearer to the blue peak wavelength and farther from the red peak wavelength with respect to the length of the wavelength (see FIG. 7, but the red peak is not shown in FIG. 7). FIG. 7 shows an emission spectrum of light emitted from the light emitting functional layer 18 according to the present embodiment. Looking at this, the green peak does not have a sharp shape like the blue peak, It can be seen that there is only a shape such as a bulge in the middle of the ridge line that gently follows from the blue peak. In such a case, assuming that one organic EL element as described above expresses green, there is a concern that the adverse effect when a short wavelength shift occurs is most noticeable with respect to green. The

However, in this embodiment, the occurrence of the above problems is prevented to a considerable extent.
In FIG. 8, points G1 and G2 are the same as points G1 and G2 in FIG. In such a situation, when the organic EL device 100 is viewed obliquely, these points G1 and G2 also suffer from the short wavelength shift as described above. In FIG. 8, points G1 ′ and G2 ′ represent the points G1 and G2 after the short wavelength shift.
However, in this case, as described above, the viewer does not recognize these points G1 ′ and G2 ′ in a raw manner, but instead emits light having a color corresponding to the midpoint of the line segment connecting them. recognize. That is, as shown in FIG. 8, the viewer recognizes light having a color corresponding to the point VC ′.
This point VC ′ does not deviate so much from the point VC shown in FIG.
Thus, according to the present embodiment, although a short wavelength shift occurs, the viewer can recognize light having a color as if there was no such shift.

According to the organic EL device 100 described above, the following effects are exhibited.
(1) First, as already described, according to the organic EL device 100 according to the present embodiment, the viewer always has substantially the same color regardless of whether the viewer faces the organic EL device 100 or faces the organic EL device 100 obliquely. It is possible to recognize light having That is, the viewing angle characteristics of the organic EL device 100 are remarkably improved.
Of course, the organic EL device 100 according to the present embodiment can display a higher quality color image by the pixel Px.

(2) Further, according to the organic EL device 100 according to this embodiment, the area of the organic EL elements 8G1 and 8G2 responsible for green is approximately half the area of the organic EL elements 8R and 8B responsible for red and blue. However, this is preferable from the viewpoint of the total amount of light emission (or the total amount of light reaching the eyes of the viewer) and the like. Thereby, the viewer can recognize a color image without a sense of incongruity.
In relation to this, according to the organic EL device 100, the arrangement relationship of the organic EL elements 8R, 8G1, 8G2, and 8B in a plan view is set with a good balance as shown in FIG. Thus, higher quality image display becomes possible. In particular, the arrangement mode according to the present embodiment is preferably applied when a still image such as a character is displayed by the plurality of pixels Px.

<Example 1>
Table 1 shown below is a more specific example (simulation result) in which the viewing angle characteristics are improved, and Table 2 is a comparative example.

In these tables, it is assumed that the light emitting functional layer 18 is composed of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer / injection layer, and the pixel electrode 13. Is ITO, hole injection layer is PEDOT-PSS, hole transport layer is NPD (N, N′-di (1-naphthyl) -N, N′-diphenyl-1,1′-biphenyl-4,4′- Diamine (α-NPD)), the light emitting layer is assumed to be composed of 8-hydroxyquinoline aluminum (Alq ₃ ), and the electron transport layer / injection layer is composed of Alq3 laminated with LiF. In particular, it is assumed that the thickness of the hole injection layer is “48 nm”.
In these tables, “luminance ratio” means the ratio of the luminance when facing the organic EL device 100 and the luminance when the angle φ in FIG. 6 is 75 degrees. Furthermore, “Δx” and “Δy” are values of x and y on the chromaticity diagram between when the organic EL device 100 is directly facing and when the angle φ in FIG. 6 is 75 degrees. This means a deviation (in other words, the degree of “deviation” received by the color recognized by the viewer due to the influence of the short wavelength shift) (see point VC and point VC ′ in FIG. 8).

Of these tables, first, in Comparative Example 1 (Table 2), the luminance ratio, Δx and Δy in the case where one organic EL element corresponds to each of red, green and blue colors as in the prior art. Represents. Focusing particularly on green in the comparative example 1, the luminance ratios, Δx, and Δy are 0.095, 0.093, and 0.248, respectively.
On the other hand, Example 1 (Table 1) is different from Comparative Example 1 in that the luminance ratio, Δx, and Δy when the film thickness D2 of the pixel electrode 13G1 is changed to 60 nm and the film thickness D2 of the pixel electrode 13G2 is changed to 43 nm. Represents. Focusing particularly on the green color in Example 1, the luminance ratios Δx and Δy are 0.124, 0.109, and 0.189, respectively.

According to this result, Δx is 0.093 in Comparative Example 1, but is 0.109 in Example 1 and the shift amount is slightly increased, but Δy is 0.248 in Comparative Example 1. However, in Example 1, it becomes 0.189, and the shift amount is effectively suppressed. That is, the viewer who visually recognizes the organic EL device according to Example 1 receives only a smaller change in Δy compared to Comparative Example 1 even when the viewpoint is changed from the normal view to the 75 ° view. Recognize green light. Thus, the viewing angle characteristics of Example 1 are improved compared to Comparative Example 1.
In the above description, the point that the amount of change in Δx is slightly anxious, but from the viewpoint of the hue that the viewer finally recognizes, the shape of the triangle in FIG. 5 and FIG. It is preferable to place more importance on the amount of change in Δy than on the amount of change in Δx (that is, the viewer feels a change in image quality more sensitively to the transition in Δy. Therefore, even if Δx increases slightly, it is more effective to improve the viewing angle characteristics if Δy is suppressed.) In this sense, the first embodiment provides a very preferable specific example.

<Example 2>
Table 3 shown below is another more specific example (simulation result) in which the viewing angle characteristics are improved, and Table 4 is a comparative example.

The assumptions in these tables are the same as in Tables 1 and 2 above.
However, in Tables 3 and 4, it is assumed that the thickness of the hole injection layer is not “48 nm” but “32 nm”.

Of these tables, first, in Comparative Example 2 (Table 4), the luminance ratio, Δx, and Δy when one organic EL element corresponds to each of red, green, and blue colors as in the prior art. Represents. Focusing on green in the comparative example 2, the luminance ratios, Δx, and Δy are 0.102, 0.099, and 0.235, respectively.
On the other hand, Example 2 (Table 3) is different from Comparative Example 2 in that the luminance ratio, Δx, and Δy when the film thickness D2 of the pixel electrode 13G1 is changed to 76 nm and the film thickness D2 of the pixel electrode 13G2 is changed to 65 nm. Represents. Focusing particularly on the green color in Example 2, the luminance ratios Δx and Δy are 0.145, 0.134 and 0.165, respectively.

According to this result, Δx is 0.099 in Comparative Example 2, but is 0.134 in Example 2, and the shift amount is slightly increased, but Δy is 0.235 in Comparative Example 2. However, in Example 2, it becomes 0.165, and the shift amount is effectively suppressed.
That is, also in the second embodiment, the viewing angle characteristics are improved as in the first embodiment, although the hole injection layer and the film thicknesses of the pixel electrodes 13G1 and 13G2 are changed.

<Method for manufacturing organic EL device>
Next, a method for manufacturing the organic EL device 100 according to this embodiment described above will be described with reference to FIGS. 9 to 12 in addition to FIGS. 1 to 8 already referred to. Note that the manufacturing method according to the present embodiment is characterized in that pixel electrodes 13R, 13G1, 13G2, and 13B having four film thicknesses D1 to D4 are formed as shown in FIG. The explanation is focused on this point.

First, the circuit element thin film 11, the interlayer insulating film 302, and the reflective layer 34 are formed on the element substrate 7. In any of these film formations, a known film formation method such as a PVD method, a CVD method, a sputtering method, or a photolithography method is appropriately used. At that time, since the formation of the circuit element thin film 11 includes the manufacture of TFTs such as the first transistor 68, a doping process or the like to the semiconductor layer is also performed. In order to form the hole 363, an appropriate etching process or the like is also performed.
9 to 12, for the sake of simplicity, the structures at the stage where the layers up to the reflective layer 34 are formed are collectively denoted by reference numeral “SSF”. This becomes a base film for forming the subsequent pixel electrode 13 (hereinafter, referred to as “base film SSF”. In the figure, in the base film SSF, the contact hole 363 and the reflection layer 34 are described. Etc. are omitted at all (see contrast with FIG. 4)).

Subsequently, the pixel electrode 13 (= 13R, 13G1, 13G2, 13B) is formed. The formation process of the pixel electrode 13 includes the formation processes of the first to third pixel electrode layers 131, 132, and 133 as described below.
First, as shown in FIG. 9, the first pixel electrode layer 131 is formed.
For the first pixel electrode layer 131, for example, photolithography and an acidic mixed solution are used for an ITO original film formed to have a film thickness d1 = 55 nm by sputtering, CVD, or the like. It is formed by performing the patterning process which had been carried out. In this case, in the patterning process, among the four types of pixel electrodes 13 to be finally formed, the pixel electrode 13 (that is, the pixel) having the film thickness (that is, D1, D2) from the largest to the second is counted. The first pixel electrode layer 131 is left only at the position where the electrodes 13R and 13G1) are to be formed (see FIG. 9 and, for example, FIG. 12 or FIG. 4).
Thus, the pixel electrodes 13R and 13G1 having an oval shape and arrangement as shown in FIG. 3 in plan view are formed on the element substrate 7 so as to be arranged in a matrix arrangement.
Before forming the first pixel electrode layer 131 made of ITO, a thin film for preventing electric corrosion made of SiN or the like may be formed on the reflective layer 34. The thickness of this thin film is preferably about 50 nm, for example.

Subsequently, as shown in FIG. 10, a resist 90 and a second pixel electrode layer 132 are formed.
First, a resist is applied. In this case, as shown in FIG. 10, the pixel electrode having the second film thickness (that is, D2) counted from the largest among the pixel electrodes 13 to be finally formed in the resist after coating. The resist except for the resist 90 on the position where 13 (that is, the pixel electrode 13G1) is to be formed is removed. As a result, the resist 90 remains only at that position.
Next, the second pixel electrode layer 131 is formed in the same manner as the first pixel electrode layer 131.
However, the film thickness d2 in this case is different from the first pixel electrode layer 131 so that d2 = about 35 nm. In this case, the patterning process is performed in the pixel electrode 13 having a film thickness (ie, D1, D2, D3) from the largest to the third among the four types of pixel electrodes 13 to be finally formed. That is, the second pixel electrode layer 132 is left only at the position where the pixel electrodes 13R, 13G1, and 13G2 are to be formed (see FIG. 10, for example, FIG. 12 or FIG. 4 and the like). ).
As a result, the pixel electrodes 13R, 13G1, and 13G2 having an oval shape and arrangement as shown in FIG. 3 in plan view are formed on the element substrate 7 so as to be arranged according to the matrix arrangement.

Subsequently, as shown in FIG. 11, the resist 90 is removed.
At this time, as described above, since the second pixel electrode layer 132 is also formed at the formation position of the pixel electrode 13G1 that finally has the film thickness D2, the second pixel electrode layer The layer 132 is also formed on the resist 90 (see FIG. 10). Therefore, the second pixel electrode layer 132 is removed together with the removal of the resist 90 (see the broken line in FIG. 11).

Subsequently, as shown in FIG. 12, a third pixel electrode layer 133 is formed.
This is also formed in the same manner as the first pixel electrode layer 131 described above.
However, the film thickness d3 in this case is set to be about d3 = 30 nm, unlike the first / pixel electrode layer 131 or the second / pixel electrode layer 132. Further, the patterning process in this case is performed so that the third pixel electrode layer 133 remains only at a position where all of the four types of pixel electrodes 13 to be finally formed are to be formed (FIG. 12). For example, refer to FIG. 4 or FIG.
As a result, the pixel electrodes 13R, 13G1, 13G2, and 13B as shown in FIG. 3 are formed on the element substrate 7 so as to be arranged according to a matrix arrangement in plan view.

  After the above processing, as shown in FIG. 12, the pixel electrode 13 having four film thicknesses D1 to D4 is formed only after three patterning processes. That is, the pixel electrode 13R is formed to have a film thickness of 120 nm (= d1 + d2 + d3 = 55 + 35 + 30), which is the total film thickness of the first / pixel electrode layer 131 to the third / pixel electrode layer 133, and the pixel electrode 13G1 The pixel electrode 13G2 is formed to have a film thickness of 85 nm (= d1 + d3 = 55 + 30), which is the total film thickness of the first pixel electrode layer 131 and the third pixel electrode layer 133. In addition, the pixel electrode 13B is formed to have a film thickness of 65 nm (= d2 + d3 = 35 + 30), which is the total film thickness of the third and pixel electrode layers 133, and the pixel electrode 13B is a film thickness that is the film thickness of the third and pixel electrode layers 133. It will be formed as having 30 nm (= d3).

  Subsequently, subsequently, layers such as an interlayer insulating film 304 and a light emitting functional layer 18 are formed. This is also formed by a known method such as a CVD method as in the case of the reflective layer 34 and the like.

According to the method for manufacturing an organic EL device as described above, the following effects are exhibited.
That is, as already described, in this manufacturing method, the patterning process is performed only three times in forming the pixel electrodes 13R, 13G1, 13G2, and 13B having the four film thicknesses D1 to D4.
As described above, according to the present embodiment, more types of pixel electrodes 13R, 13G1, 13G2, and 13B (and thus more types of optical resonators) are formed while performing less patterning processing and the like. The pixel electrode 13, the base film SSF, the element substrate 7, and the like are less likely to be damaged by the patterning process or the like, and thus the manufacturing yield can be improved. In addition, the need for patterning and the like is naturally reduced, and the manufacturing cost is reduced.

  In the above manufacturing method, as long as there is a difference between the film thickness d1 of the first and pixel electrode layers 131 and the film thickness d2 of the second and pixel electrode layers 132, the four film thicknesses are finally obtained. Pixel electrodes 13R, 13G1, 13G2, and 13B having D1 to D4 are formed. In other words, in this case, the first and third pixel electrode layers 131 and 133 may have the same film thickness (d1 = d3), or the second and third pixel electrode layers 132 and 133 may have the same film thickness. The film thickness may be the same (d2 = d3) (however, both must not be satisfied simultaneously).

Further, the above manufacturing method only presents a specific example of “a manufacturing method of a light emitting device” according to the present invention. In addition to the above, for example, the pixel electrode 13 may be manufactured in the order shown in FIGS.
This manufacturing method is different from the formation timing of each of the pixel electrode layers 131 to 133 and the resist 90 and the difference between the pixel electrode layers to be removed together with the resist 90 (in the above manufacturing method, the second pixel electrode layer 132 is removed and the present manufacturing process is performed). In the method, the third pixel electrode layer 133 is removed.), But the manufacturing method is essentially the same. In particular, since the patterning process in this manufacturing method is performed three times in total, twice in FIG. 13 and once in FIG. 14, the number of patterning processes is also between this manufacturing method and the above manufacturing method. does not change.
However, in this manufacturing method, the film thickness D2 of the pixel electrode 13G1 finally formed is d1 + d2 (d1 + d3 in the above manufacturing method), and the film thickness D3 of the pixel electrode 13GG2 is d2 + d3. It will be different from the method.
In addition to this, the film thicknesses D2 and D3 of the pixel electrodes 13G1 and 13G2 may be d1 + d2 and d1 + d3, respectively.
In any case, even with these manufacturing methods, a greater variety of pixel electrodes 13 can be formed with a smaller number of patterning processes, and thus the above-described effects are similarly achieved.

While the embodiments according to the present invention have been described above, the organic EL device according to the present invention is not limited to the above-described embodiments, and various modifications can be made.
(1-i) In the above embodiment, as shown in FIG. 3, the organic EL elements 8G1 and 8G2 are described so as to be sandwiched between the organic EL elements 8R and 8B. The present invention is not limited to such a form.
For example, as shown in FIG. 17, the organic EL element 8G1-1 in charge of green is arranged on the right side of the organic EL element 8R-1 in charge of red, and the organic EL element 8G2-1 in charge of green is also provided. The form in which the organic EL element 8B-1 in charge of blue is arranged on the right side in the figure and the organic EL element 8G1-1 is arranged adjacent to the organic EL element 8B-1 is also the case. Within the scope of the invention. In this embodiment, one pixel Px1 is configured by these four organic EL elements 8R-1, 8G1-1, 8B-1, and 8G2-1.
According to such a form, the organic EL elements 8G1-1 and 8G2-1 in charge of green are arranged so as to be separated, so that, for example, still images such as characters are displayed. At the time, or when displaying a moving image, the possibility that the outline of the character or the motion of the moving image is expressed more smoothly is increased.

(1-ii) Alternatively, as shown in FIG. 18, the organic EL elements 8 may be arranged in a staggered pattern. That is, in this figure, each of the three groups of the organic EL elements 8G1-2 and 8G2-2 in charge of green, the organic EL element 8R-2 in charge of red, and the organic EL element 8B-2 in charge of blue, It arrange | positions so that the vertex of the triangle shown with a broken line may be occupied in the figure. In this embodiment, one pixel Px2 is configured by these four organic EL elements 8G1-2, 8G2-2, 8R-2, and 8B-2. In this embodiment, a plurality of the pixels Px2 are arranged in a so-called checkered pattern (the above arrangement is naturally included in the “matrix arrangement” in the present invention).
According to such a form, it is possible to display a moving image more smoothly.

(1-iii) Alternatively, as shown in FIG. 19, it is also within the scope of the present invention that pixels Px1 and Px having different arrangement mechanisms are alternately arranged. As is clear from the figure, the pixel Px1 is a pixel including the organic EL element 8G1-1 shown in FIG. 17, and the pixel Px is the pixel described in the above embodiment (the pixel shown in FIG. 3). is there.

(2) In the above embodiment, as shown in FIG. 3, only the organic EL element 8 in charge of green is described as being composed of two organic EL elements 8G1 and 8G2. The form is not limited.
For example, as shown in FIG. 20, in addition to the organic EL elements 8G1-3 and 8G2-3 in charge of green, the organic EL element in charge of red is also composed of two organic EL elements 8R1-3 and 8R2-3. Various forms are also within the scope of the present invention.
According to such a form, the same effect as described with reference to the chromaticity diagrams of FIG. 5 and FIG. 8 is also enjoyed for red light.
In some cases, the configuration shown in FIG. 20 may be further changed so that the organic EL element in charge of blue is divided into the so-called organic EL elements 8R1-3 and 8R2-3.

<Example 3>
Table 5 shown below is a more specific example (simulation result) in which the viewing angle characteristic is improved for red as well as green as described above.

The assumptions in this table are the same as in Tables 3 and 4 above.
In this table, the film thickness of the pixel electrode 13R1-3 (meaning the pixel electrode included in the organic EL element 8R1-3) is 118.8 nm, and the pixel electrode 13R2-3 (included in the organic EL element 8R2-3). The film thickness of the pixel electrode is 124.2 nm. Focusing on red in Table 5, the luminance ratio, Δx, and Δy are 0.125, 0.032, and −0.075, respectively.

Since the conditions of Example 3 are the same as the conditions of Comparative Example 2 (Table 4) except for the differences regarding the organic EL elements 8R1-3 and 8R2-3 in charge of red, the conditions can be compared with this. It is. According to this, Δx is 0.049 in the above-mentioned comparative example 2, but 0.032 in this example 3, and Δy is −0.078 in comparative example 2. In this case, −0.075, and the shift amount is suppressed in all cases.
As described above, in the third embodiment, in addition to the improvement of the viewing angle characteristic regarding green, the improvement of the viewing angle characteristic regarding red is also realized.

(3) In the above embodiment, the mode in which the light emitting functional layer 18 is formed as if covering the entire surface of the element substrate 7 has been described, but the present invention is not limited to this mode.
For example, a manufacturing method in which the organic EL material is supplied to each space on the pixel electrode 13 partitioned by the partition layer 340 using the partition layer 340 described above may be employed. In this case, a vapor deposition method, an inkjet method, etc. can be used suitably. According to such an embodiment, the light emitting functional layer 18 can be provided separately for each color. That is, for each space partitioned by the partition wall 340, for example, it is possible to form a light emitting functional layer including organic EL materials dedicated to red light, green light, and blue light.
In such a case, it is not always necessary to provide the color filter 51 described above, but in such a case, the color filter 51 may be provided as it is. In this form, the effect that the color purity of each display color is raised is acquired.

  In this regard, in the above-described embodiment, each of the green filters 51G1 and 51G2 “transmits light having a peak wavelength of 520 nm and a wavelength region in the vicinity thereof”. The green filters 51G1 and 51G2 may be configured to transmit light having the same wavelength in principle, for example, by being made of the same material, or may be made of a slightly different material. , It may be configured to transmit light having slightly different wavelengths between the two. In the latter case, for example, it is needless to say that the slightly different wavelengths are preferably determined based on the points G1 and G2 shown in FIG. 5 or FIG.

(4) As shown in FIG. 4, the organic EL device 100 according to the embodiment includes, in order from the element substrate 7 side, the reflective layer 34, the pixel electrode 13, the light emitting functional layer 18, and the counter electrode 5. The counter electrode 5 has a function as a “translucent semi-reflective layer” according to the present invention, and the pixel electrode 13 has an “optical distance adjusting layer” according to the present invention. Of course, the present invention is not limited to such a form.
For example, the “optical distance adjusting layer” according to the present invention may constitute a part of the “light emitting device” as a layer having a function only for adjusting the optical distance in the resonator. In other words, the pixel electrode 13 and the “optical distance adjusting layer” are separated from each other at the same time, and are formed as physically separate layers. In this case, the optical distance adjustment layer can be disposed between the pixel electrode 13 and the reflection layer 34 in FIG.
The organic EL device 100 of the above embodiment is a top emission type, but the present invention is applicable to a bottom emission type or a dual emission type. In such a case, the arrangement relationship between the “reflective layer” and “semi-transparent semi-reflective layer” according to the present invention and the “substrate” is different from the above embodiment, and the structure of FIG. In addition, various changes need to be made such that it is inconvenient for the counter electrode 5 shown in FIG. 4 to have a translucent and semi-reflective function. However, for example, assuming a bottom emission type, the present invention can be easily obtained by making the counter electrode 5 also function as a “reflective layer” according to the present invention by adding appropriate changes such as the above embodiment. Can be applied.
In any case, the above embodiment only presents a specific example of the present invention.
When the counter electrode 5 functions as a “semi-transparent semi-reflective layer” as in the above embodiment, the counter electrode 5 that is a component of the “light emitting element” is simultaneously a component of the resonator. It can be said that it also serves as a certain “semi-transparent semi-reflective layer”, but even in such an embodiment, in the present invention, the “semi-transparent semi-reflective layer” refers to the “normal direction of the substrate”. It corresponds to the case of “arranged on the other side of the light emitting element”. Similarly, when the counter electrode 5 also serves as a “reflective layer” as described above, it is said that the “reflective layer” is “disposed on one side of the light-emitting element when viewed along the normal direction of the substrate”. It corresponds to.

<Application>
Next, an electronic apparatus to which the organic EL device 100 according to the above embodiment is applied will be described.
FIG. 21 is a perspective view showing a configuration of a mobile personal computer using the organic EL device 100 according to the above embodiment as an image display device. The personal computer 2000 includes an organic EL device 100 as a display device and a main body 2010. The main body 2010 is provided with a power switch 2001 and a keyboard 2002.
FIG. 22 shows a mobile phone to which the organic EL device 100 according to the above embodiment is applied. A cellular phone 3000 includes a plurality of operation buttons 3001, scroll buttons 3002, and the organic EL device 100 as a display device. By operating the scroll button 3002, the screen displayed on the organic EL device 100 is scrolled.
FIG. 23 shows a portable information terminal (PDA: Personal Digital Assistant) to which the organic EL device 100 according to the above embodiment is applied. The information portable terminal 4000 includes a plurality of operation buttons 4001, a power switch 4002, and the organic EL device 100 as a display device. When the power switch 4002 is operated, various types of information such as an address book and a schedule book are displayed on the organic EL device 100.

  As electronic devices to which the organic EL device according to the present invention is applied, in addition to those shown in FIGS. 21 to 23, a digital still camera, a television, a video camera, a car navigation device, a pager, an electronic notebook, electronic paper, a calculator, Examples include a word processor, a workstation, a videophone, a POS terminal, a video player, and a device equipped with a touch panel.

1 is a plan view showing an organic EL device according to an embodiment of the present invention. It is a circuit diagram which shows the detail of the unit circuit which comprises the organic EL apparatus of FIG. FIG. 2 is a partially enlarged plan view of the organic EL device of FIG. 1, particularly a plan view showing a configuration of a pixel (Px). FIG. 4 is a cross-sectional view taken along line X-X ′ in FIG. 3. FIG. 5 is an xy chromaticity diagram, and also illustrates chromaticities (points G1 and G2) of light emitted from organic EL elements (8G1 and 8G2) responsible for green light emission illustrated in FIGS. 3 and 4 and the like. It is explanatory drawing which illustrated in the case of facing in front and the case where it faces diagonally with the angle (phi). FIG. 5 is an emission spectrum of light emitted from the light emitting functional layer (18) shown in FIG. 4 and is an explanatory diagram for explaining a state of a short wavelength shift. FIG. 3 is an xy chromaticity diagram showing the chromaticity (points G1 ′ and G2 ′) when the light emitted from the organic EL elements (8G1 and 8G2) responsible for green light emission shown in FIGS. 3 and 4 undergoes a short wavelength shift. ) And the like. It is a figure which shows the manufacturing process (the 1) of the pixel electrode (13) which comprises the organic EL apparatus of FIG. FIG. 10 is a diagram showing a manufacturing process (No. 2) following FIG. 9. It is a figure which shows the manufacturing process (the 3) following FIG. It is a figure which shows the manufacturing process (the 4) following FIG. It is a figure which shows the manufacturing process (the 1) different from FIG. 9 thru | or FIG. 12 of the pixel electrode (13) which comprises the organic electroluminescent apparatus of FIG. It is a figure which shows the manufacturing process (the 2) following FIG. It is a figure which shows the manufacturing process (the 3) following FIG. FIG. 16 is a diagram showing a manufacturing process (No. 4) continued from FIG. 15; FIG. 4 is a diagram having the same concept as in FIG. 3, and is a plan view showing an example in which the arrangement mode of the organic EL elements in the pixel (Px1) is different from that. It is a figure of the same meaning as FIG.3 and FIG.17, Comprising: It is a top view which shows the example from which the arrangement | sequence aspect of the organic EL element in a pixel (Px2) differs from them. FIG. 19 is a diagram having the same concept as in FIGS. 3, 17, and 18, and is a plan view showing an example in which the overall arrangement of organic EL elements is different from them. FIG. 20 is a diagram having the same concept as in FIGS. 3 and 17 to 19, and is a plan view illustrating an example in which the arrangement mode of the organic EL elements in the pixel (Px3) is different from those. It is a perspective view which shows the electronic device to which the organic electroluminescent apparatus which concerns on this invention is applied. It is a perspective view which shows the other electronic device to which the organic EL apparatus which concerns on this invention is applied. It is a perspective view which shows the further another electronic device to which the organic EL apparatus which concerns on this invention is applied.

Explanation of symbols

7: Element substrate, 8 (8R, 8G1, 8G2, 8B): Organic EL element, 13 (13R, 13G1, 13G2, 13B): Pixel electrode, 18: Light emitting functional layer, 5: Counter electrode, Px, Px1, Px2, Px3 ... Pixel, 51 (51R, 51G1, 51G2, 51B) ... Color filter, 131, 132, 133 ... First to third pixel electrode layers, d1, d2, d3 ... Film thickness (of the first to third pixel electrode layers), D1, D2, D3, D4 (thickness of the pixel electrodes 13R, 13G1, 13G2, 13B), 90: Resist

Claims (17)

A substrate,
A plurality of light-emitting elements arranged in a matrix on the substrate and constituting one pixel for each predetermined number of them,
A reflective layer that is disposed on one side of the light emitting element as viewed along the normal direction of the substrate and reflects light emitted from the light emitting element;
A translucent semi-reflective layer that is disposed on the other side of the light-emitting element as viewed along the normal direction of the substrate and reflects a part of the light and transmits the other part;
With
The reflective layer and the translucent semi-reflective layer are:
A plurality of resonators corresponding to each of the plurality of light emitting elements and resonating light having a specific wavelength among the light,
At least one of the plurality of pixels is
The resonator in which an optical distance between the reflective layer and the translucent semi-reflective layer coincides with a first optical distance, and the resonator having a second optical distance different from the first optical distance; Including at least
The pixel is
By the first and second light emitting elements corresponding to the two resonators having the first and second optical distances,
Expressing the first color,
A light emitting device characterized by that. In addition to the first and second light emitting elements, the pixel includes:
A third light emitting element expressing the second color;
A fourth light emitting element expressing the third color;
including,
The light-emitting device according to claim 1. The third optical distance of the resonator corresponding to the third light emitting element is different from any of the first and second optical distances,
The fourth optical distance of the resonator corresponding to the fourth light emitting element is different from any of the first, second, and third optical distances.
The light-emitting device according to claim 2. When the third optical distance is represented by (OT1 + OT2 + OT3 + G) [nm] (OT1, OT2, OT3, G are positive real numbers),
The fourth optical distance is represented by (OT3 + G) [nm],
The first optical distance is represented by any one of (OT1 + OT2 + G) [nm], (OT2 + OT3 + G) [nm] and (OT3 + OT1 + G) [nm], and
The second optical distance is any one of (OT1 + OT2 + G) [nm], (OT2 + OT3 + G) [nm] and (OT3 + OT1 + G) [nm], and does not represent the first optical distance. expressed,
The light-emitting device according to claim 2 or 3. The pixel is
In order to express the second color, in addition to the third light emitting element,
A fifth light emitting element corresponding to a resonator having an optical distance different from an optical distance of the resonator corresponding to the third light emitting element;
The light emitting device according to claim 2, wherein the light emitting device is a light emitting device. The first color includes green;
The light emitting device according to claim 1, wherein the light emitting device is a light emitting device. The light emitting element is
First and second electrode layers stacked along the normal direction;
A light emitting functional layer that is sandwiched between the first and second electrode layers and emits the light;
Including
At least one of the first and second electrode layers is
Disposed between the reflective layer and the translucent semi-reflective layer;
The first and second optical distances are:
Depending on the difference in film thickness of the first or second electrode layer,
The light emitting device according to any one of claims 1 to 6. At least one of the reflective layer and the translucent semi-reflective layer is
Doubles as at least one of the first and second electrode layers;
The light-emitting device according to claim 7. The third and fourth light emitting elements have substantially the same area in plan view,
The first and second light emitting elements have substantially half the area compared to the third and fourth light emitting elements.
The light emitting device according to claim 2, wherein the light emitting device is a light emitting device. In plan view, the first and second light emitting elements are
Arranged so as to be sandwiched between the third and fourth light emitting elements,
The light-emitting device according to claim 9. In plan view, the first light emitting element is disposed next to the third light emitting element,
The second light emitting element is disposed next to the fourth light emitting element; and
The first light emitting element is disposed next to the fourth light emitting element.
The light-emitting device according to claim 9. In plan view
Each of the three sets of the first and second light emitting elements, the third light emitting element, and the fourth light emitting element is disposed so as to occupy a vertex of a triangle.
The light-emitting device according to claim 9. The light emitting device according to any one of claims 1 to 12, comprising:
An electronic device characterized by that. A method of manufacturing a light-emitting device corresponding to each of four light-emitting elements and including four optical resonators at first to fourth positions on a substrate,
In the first position, a 1-1 layer, a 1-2 layer, and a 1-3 layer (hereinafter referred to as “AB layer”) having first, second, and third film thicknesses, respectively, Forming a first optical distance adjusting layer by sequentially forming a B layer at the A position),
Simultaneously with the step of forming any one of the first-first layer, the first-second layer, and the first-third layer at the second position, the second-first layer and the second-second layer are formed. Forming a second optical distance adjustment layer by forming;
In the third position, any one of the 1-1, 1-2, and 1-3 layers (provided that the two layers include the 2-1 layer and the 1-2 layer). And a step of forming a third optical distance adjusting layer by forming a 3-1 layer and a 3-2 layer at the same time as the step of forming the 2-2 layer. ,
Forming the fourth optical distance adjustment layer by forming the 4-1 layer simultaneously with the step of forming the first-3 layer at the fourth position;
Including
A resonator forming step of forming the four optical resonators including the first, second, third and fourth optical distance adjustment layers;
A method for manufacturing a light-emitting device. Forming a resist as an upper layer of the 2-1 layer, the 2-2 layer, the 3-1 layer, or the 3-2 layer;
Removing the layer formed simultaneously with the step of forming any one of the first-1-2 layer and the first-third layer, which is formed as an upper layer of the resist, together with the resist; ,
Further including
The method of manufacturing a light emitting device according to claim 14. Forming first and second electrode layers at the first to fourth positions on the substrate;
Forming a light emitting functional layer between the first and second electrode layers,
Further comprising the step of forming the light emitting element,
The first, second, third and fourth optical distance adjustment layers are:
Doubles as at least one of the first and second electrode layers;
16. The method for manufacturing a light emitting device according to claim 14, wherein the method is a light emitting device. The resonator forming step further includes
Forming a reflective layer that reflects light emitted from the light emitting element on the substrate;
Forming a translucent semi-reflective layer on the substrate for reflecting a part of the light and transmitting the other part;
Including
At least one of the reflective layer and the translucent semi-reflective layer is
Doubles as at least one of the first and second electrode layers;
The method of manufacturing a light emitting device according to claim 16.

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