JP2010140697A - High-frequency induction thermal plasma device - Google Patents

High-frequency induction thermal plasma device Download PDF

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JP2010140697A
JP2010140697A JP2008314068A JP2008314068A JP2010140697A JP 2010140697 A JP2010140697 A JP 2010140697A JP 2008314068 A JP2008314068 A JP 2008314068A JP 2008314068 A JP2008314068 A JP 2008314068A JP 2010140697 A JP2010140697 A JP 2010140697A
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pipe
probe
tip
thermal plasma
frequency induction
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JP5111348B2 (en
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Akira Iwata
明 岩田
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Jeol Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To avoid plasma from getting unstable, and prevent a molten powder material from generating spots. <P>SOLUTION: The device is provided with a cylindrical member 2 formed of an insulating material, a gas ring 3 for supplying plasma gas into the cylindrical member 2, a probe 11' with a pipe Q' inserted for supplying the powder material and carrier gas into the cylindrical member 2 and fitted along a center axis of the gas ring 3, and an induction coil 4 wound around an outside of the cylindrical member 2. It is so structured that high-frequency induction thermal plasma is generated inside the cylindrical member 2 by supplying high-frequency power to the induction coil 4. An engagement part each is formed capable of getting engaged with and disengaged from at least a tip part of the pipe Q' and at least a tip part of a center hole H of the probe 11'. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、プラズマ中で成膜材料を蒸発させたり溶融し、該蒸発、溶融材料によって基板上に成膜等を行う高周波誘導熱プラズマ装置に関する。   The present invention relates to a high frequency induction thermal plasma apparatus that evaporates or melts a film forming material in plasma and forms a film on a substrate by using the evaporated and molten material.

図１は、従来の高周波誘導熱プラズマ装置を示している。   FIG. 1 shows a conventional high-frequency induction thermal plasma apparatus.

図中１はプラズマ発生用のトーチであり、該トーチは円筒部材２、該円筒部材の上部に取り付けられたガスリング３、該円筒部材の外側に配置された誘導コイル４等から形成されている。   In the figure, reference numeral 1 denotes a plasma generating torch, which is composed of a cylindrical member 2, a gas ring 3 attached to the upper part of the cylindrical member, an induction coil 4 arranged outside the cylindrical member, and the like. .

前記円筒部材２は二重管構造に形成されており、その内側管は、例えば、セラミックスで形成され、その外側管は石英管で形成されている。
該円筒部材は上部フランジ５ａと下部フランジ５ｂとの間に取り付けられており、これらのフランジ５ａ、５ｂは支持棒６にネジ７により固定されている。
前記上部フランジ５ａと下部フランジ５ｂとの間にはイグニションコイルの如き高電圧発生装置８が接続されている。
前記上部フランジ５ａには冷却水の出口通路９が設けられ、下部フランジ５ｂには冷却水の入口通路１０が設けられており、前記円筒部材２の二重管内部には該入口通路から冷却水が供給され、前記出口通路９から冷却水が排出される様に成っている。 The cylindrical member 2 is formed in a double tube structure, and the inner tube is made of, for example, ceramics, and the outer tube is formed of a quartz tube.
The cylindrical member is attached between the upper flange 5a and the lower flange 5b, and these flanges 5a and 5b are fixed to the support rod 6 with screws 7.
A high voltage generator 8 such as an ignition coil is connected between the upper flange 5a and the lower flange 5b.
The upper flange 5a is provided with an outlet passage 9 for cooling water, the lower flange 5b is provided with an inlet passage 10 for cooling water, and the cooling water from the inlet passage is introduced into the double pipe of the cylindrical member 2. Is supplied, and the cooling water is discharged from the outlet passage 9.

前記ガスリング３の中央部分にはプローブ１１が設けられている。該プローブの中心部にはその長手方向に孔Ｈ（以後、プローブ中心孔と称す）が穿たれており、該孔内にパイプＱが挿入されている。このパイプを介して前記円筒部材２内に図示していない粉末供給部から粉末材料がキャリアガスと共に供給される様に成っている。
又、図示していないプラズマガス源からプラズマガスが前記ガスリング３の供給路１７から前記円筒部材２内部に供給される様に成っている。
又、前記プローブ１１内には冷却水の通路が設けられており、その冷却水は入口１２から入り、出口１３から排出される様になっている。
又、前記ガスリング３の内部にも冷却水路１４が設けられ、該水路内に冷却水が供給される様に成っている。 A probe 11 is provided at the center of the gas ring 3. A hole H (hereinafter referred to as a probe center hole) is formed in the center of the probe in the longitudinal direction, and a pipe Q is inserted into the hole. A powder material is supplied together with a carrier gas from a powder supply unit (not shown) into the cylindrical member 2 through the pipe.
Further, a plasma gas is supplied from a plasma gas source (not shown) into the cylindrical member 2 from a supply path 17 of the gas ring 3.
A cooling water passage is provided in the probe 11, and the cooling water enters from the inlet 12 and is discharged from the outlet 13.
A cooling water channel 14 is also provided inside the gas ring 3, and cooling water is supplied into the water channel.

尚、前記誘導コイル４には、図示していないが高周波電源からの高周波電力が供給されるように構成される様に成っている。
前記トーチ１の下部にはチャンバー１２が配置されている。該チャンバー内は図示していない真空排気系により真空に排気されるように構成されている。
この様な構成の高周波誘導熱プラズマ装置の動作を次に説明する。
前記トーチ１のガスリング３を介して円筒部材２内にプラズマガス（例えば、アルゴンガス）を供給すると共に、前記誘導コイル４に高周波電力を供給する。この状態で、前記高電圧発生装置８から高電圧を上部フランジ５ａと下部フランジ５ｂの間に印加すると、該上部フランジと下部フランジとの間でコロナ放電が生起し、この放電が引き金となって前記トーチ１内にプラズマＰが発生（着火）する。そして、２分子ガス（酸素や窒素）を混入しながら徐々に高周波電力を上昇させて該プラズマＰを安定化させる。そして、前記ガスリング３の中心に位置するプローブ中心孔Ｈ内のパイプＱを介して、蒸着すべき粉末材料をキャリアガス（例えば、アルゴンガス）と共に該プラズマＰの中心部に供給する。
すると、該粉末材料は、１万度程度の熱プラズマによって蒸発したり溶融され、更に、同時に供給されている２分子ガス等によって酸化或いは窒化などの化学反応を生じた後、プラズマフレーム下部に位置した前記チャンバー１５内に配置された基板（図示せず）上に蒸着され、その結果、該基板上には高品質の蒸着膜が生成される。 The induction coil 4 is configured to be supplied with high frequency power from a high frequency power source (not shown).
A chamber 12 is disposed below the torch 1. The inside of the chamber is configured to be evacuated by a vacuum exhaust system (not shown).
Next, the operation of the high-frequency induction thermal plasma apparatus having such a configuration will be described.
Plasma gas (for example, argon gas) is supplied into the cylindrical member 2 through the gas ring 3 of the torch 1 and high-frequency power is supplied to the induction coil 4. In this state, when a high voltage is applied from the high voltage generator 8 between the upper flange 5a and the lower flange 5b, a corona discharge occurs between the upper flange and the lower flange, and this discharge is triggered. Plasma P is generated (ignited) in the torch 1. The plasma P is stabilized by gradually increasing the high frequency power while mixing the bimolecular gas (oxygen or nitrogen). Then, a powder material to be deposited is supplied to the center of the plasma P together with a carrier gas (for example, argon gas) through a pipe Q in the probe center hole H located at the center of the gas ring 3.
Then, the powder material is evaporated or melted by thermal plasma of about 10,000 degrees, and further, a chemical reaction such as oxidation or nitridation is caused by the bimolecular gas supplied at the same time. Then, vapor deposition is performed on a substrate (not shown) disposed in the chamber 15, and as a result, a high quality vapor deposition film is formed on the substrate.

特開２００３−３１１１４６号公報JP 2003-31146 A

さて、前記トーチ１内の熱プラズマは１万度前後にも達するため、該プローブの先端部が極めて高温に加熱されてしまう。そこで、前記した様に、該プローブ内には冷却水通路が設けられ、該プローブは該冷却水により冷却されている。   Since the thermal plasma in the torch 1 reaches about 10,000 degrees, the tip of the probe is heated to an extremely high temperature. Therefore, as described above, a cooling water passage is provided in the probe, and the probe is cooled by the cooling water.

一方、該プローブ中心孔Ｈ内に挿入されている前記パイプＱの先端部は前記熱プラズマにより極めて高温に加熱され漸次損傷が進むので、時々新しいパイプに交換しなければならない。この際、この交換がスムーズに行われる様に、パイプＱの外形は前記プローブ中心孔Ｈ内の径より可成り小さく成っており、該パイプは該孔内面に接触せずに挿入されている。この非接触により該パイプは前記プローブ１１内を流れる冷却水による冷却効果が望めないので、前記プローブ中心孔内に挿入する場合には、図２に示す様に、前記プローブ先端面から反熱プラズマＰ側（熱プラズマＰが形成されている側と反対の側）に遠く離している。尚、図２において、１６は前記プローブ１１内に設けられた冷却水通路を示す。   On the other hand, the tip end portion of the pipe Q inserted into the probe center hole H is heated to an extremely high temperature by the thermal plasma and gradually damages. Therefore, a new pipe must be replaced from time to time. At this time, the outer shape of the pipe Q is considerably smaller than the diameter in the probe center hole H so that the exchange can be performed smoothly, and the pipe is inserted without contacting the inner surface of the hole. Since the pipe cannot be cooled by the cooling water flowing in the probe 11 due to this non-contact, when inserted into the center hole of the probe, as shown in FIG. It is far away from the P side (the side opposite to the side where the thermal plasma P is formed). In FIG. 2, reference numeral 16 denotes a cooling water passage provided in the probe 11.

しかしながら、前記パイプＱを通過して来た粉末材料を含むキャリアガスが該パイプ先端を出て該プローブ中心孔に差し掛かると、該プローブ中心孔の径は前記パイプ内径より可成り大きいので、前記粉末材料を含むキャリアガスが急に拡散する。この拡散により、前記プローブ１１先端から前記チャンバー１５の上部辺りにかけて形成されるプラズマＰが不安定な状態（プラズマの形状が歪む状態、プラズマ化が妨げられる状態等）になる。その為、粉末材料の溶融に斑が発生する等の問題が発生する。   However, when the carrier gas containing the powder material that has passed through the pipe Q exits the pipe tip and reaches the probe center hole, the diameter of the probe center hole is considerably larger than the pipe inner diameter. The carrier gas containing the powder material suddenly diffuses. Due to this diffusion, the plasma P formed from the tip of the probe 11 to the vicinity of the upper portion of the chamber 15 becomes unstable (a state in which the shape of the plasma is distorted, a state in which plasma formation is prevented, or the like). For this reason, problems such as the occurrence of spots in the melting of the powder material occur.

本発明は、この様な問題を解決する新規な高周波誘導熱プラズマ装置を提供することを目的とする。   It is an object of the present invention to provide a novel high frequency induction thermal plasma apparatus that solves such problems.

本発明の高周波誘導熱プラズマ装置は、絶縁性物質で形成された管と、該管の一端に設けられ、プラズマガスを該管内に供給するためのガスリングと、被加熱材料とキャリアガスを前記管内に供給するためのパイプが挿入されて、前記ガスリングの中心軸に沿って設けられたプローブと、該プローブを冷却する冷却機構と、前記管の外側に巻かれた誘導コイルとを備え、該誘導コイルに高周波電力を供給することによって前記管内に高周波誘導熱プラズマを発生させる様に成した高周波誘導熱プラズマ装置において、前記プローブの挿入孔内の少なくとも先端部分に係合部を、前記パイプの少なくとも先端部分に前記係合部に対して係脱可能な被係合部をそれぞれ形成したことを特徴とする。   The high-frequency induction thermal plasma apparatus of the present invention includes a tube formed of an insulating material, a gas ring provided at one end of the tube, for supplying plasma gas into the tube, a material to be heated, and a carrier gas. A pipe to be supplied into the pipe is inserted, and includes a probe provided along the central axis of the gas ring, a cooling mechanism for cooling the probe, and an induction coil wound around the outside of the pipe, In the high-frequency induction thermal plasma apparatus configured to generate high-frequency induction thermal plasma in the tube by supplying high-frequency power to the induction coil, an engagement portion is provided at least at a tip portion in the insertion hole of the probe. An engaged portion that can be engaged and disengaged with respect to the engaging portion is formed at least at the tip portion of each.

例えば、粉末材料の如き被加熱物質を含むキャリアガスを円筒部材内に供給するためのパイプの先端がプローブの先端と面一に成る様に該パイプを該プローブ中心孔に係合させることが出来るので、前記パイプ内の被加熱物質を含むキャリアガスは少なくとも前記プローブ内で拡散することなく、前記円筒部材内のプラズマの中心部に供給される。従って、プラズマが不安定な状態になることはなく、その為、粉末材料の溶融に斑が発生する等の問題は発生しない。   For example, the pipe can be engaged with the probe center hole so that the tip of the pipe for supplying a carrier gas containing a heated substance such as a powder material into the cylindrical member is flush with the tip of the probe. Therefore, the carrier gas containing the material to be heated in the pipe is supplied to the central portion of the plasma in the cylindrical member without diffusing at least in the probe. Therefore, the plasma does not become unstable, and therefore, there is no problem such as the occurrence of spots in the melting of the powder material.

又、前記パイプの先端部が前記プローブ中心孔Ｈの先端部に接触しているので、該プローブ内を通る冷却水により該パイプの先端が冷却され、その結果、熱プラズマによる前記パイプ先端部分の加熱の影響を緩和することが出来、該パイプの交換サイクルを長くすることが出来る。   Further, since the tip of the pipe is in contact with the tip of the probe center hole H, the tip of the pipe is cooled by the cooling water passing through the probe, and as a result, the tip of the pipe by the thermal plasma is cooled. The influence of heating can be alleviated and the replacement cycle of the pipe can be lengthened.

以下、図面に従って本発明の実施の形態を詳細に説明する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

図３は本発明の高周波誘導熱プラズマ装置の主要部を成すトーチの構成要素であるプローブ１１´の概略を示す。図中、図２で使用した記号と同一記号の付されたものは同一構成要素を示す。プローブ１１´以外の構成は、図1に示された高周波誘導熱プラズマ装置と同じである。   FIG. 3 shows an outline of a probe 11 'which is a component of the torch constituting the main part of the high frequency induction thermal plasma apparatus of the present invention. In the figure, the same reference numerals as those used in FIG. 2 denote the same components. The configuration other than the probe 11 'is the same as that of the high-frequency induction thermal plasma apparatus shown in FIG.

図３に示すプローブ１１´が図２に示すプローブ１１と構造上で異なる所は次の通りである。   The probe 11 ′ shown in FIG. 3 is structurally different from the probe 11 shown in FIG. 2 as follows.

例えば、プローブ中心孔Ｈ内面の先端部には雌ねじが切られており、該プローブ中心孔に挿入されるパイプＱ´の先端部が該プローブ中心孔に接触する程度の外径を有する様に形成されており、且つ、該パイプ外面の先端部には雄ねじが切られている。そして、該パイプＱ´を該プローブ中心孔Ｈに挿入し、該プローブ中心孔に切られた雌ねじにパイプ先端に切られた雄ねじが螺合し、該パイプ先端が該プローブ先端と面一となる様にねじ込む。図３はこの様なねじ込みを行った状態を示している。   For example, a female thread is cut at the tip of the inner surface of the probe center hole H so that the tip of the pipe Q ′ inserted into the probe center hole has an outer diameter that contacts the probe center hole. In addition, a male thread is cut at the tip of the outer surface of the pipe. Then, the pipe Q ′ is inserted into the probe center hole H, the male screw cut at the pipe tip is screwed into the female screw cut into the probe center hole, and the pipe tip is flush with the probe tip. Screw in like FIG. 3 shows a state in which such screwing is performed.

この様なプローブ１１´を図１に示す如き高周波誘導熱プラズマ装置に取り付けた場合の動作は次の通りである。   The operation when such a probe 11 'is attached to a high frequency induction thermal plasma apparatus as shown in FIG. 1 is as follows.

前記トーチ１のガスリング３を介して円筒部材２内にプラズマガス（例えば、アルゴンガス）を供給すると共に、前記誘導コイル４に高周波電力を供給する。この状態で、前記高電圧発生装置８から高電圧を上部フランジ５ａと下部フランジ５ｂの間に印加すると、該上部フランジと下部フランジとの間でコロナ放電が生起し、この放電が引き金となってトーチ１内にプラズマＰが発生（着火）する。   Plasma gas (for example, argon gas) is supplied into the cylindrical member 2 through the gas ring 3 of the torch 1 and high-frequency power is supplied to the induction coil 4. In this state, when a high voltage is applied from the high voltage generator 8 between the upper flange 5a and the lower flange 5b, a corona discharge occurs between the upper flange and the lower flange, and this discharge is triggered. Plasma P is generated (ignited) in the torch 1.

そして、２分子ガス（酸素や窒素）を混入しながら徐々に高周波電力を上昇させて該プラズマＰを安定化させる。   The plasma P is stabilized by gradually increasing the high frequency power while mixing the bimolecular gas (oxygen or nitrogen).

そして、前記プローブ中心孔Ｈ内のパイプＱ´を介して蒸着すべき粉末材料をキャリアガス（例えば、アルゴンガス）と共に該プラズマＰの中心部に供給する。   Then, the powder material to be deposited is supplied to the center of the plasma P together with a carrier gas (for example, argon gas) through the pipe Q ′ in the probe center hole H.

すると、該粉末材料は、１万度程度の熱プラズマによって蒸発したり溶融され、更に、同時に供給されている２分子ガス等によって酸化或いは窒化などの化学反応を生じた後、プラズマフレーム下部に位置した前記チャンバー１５内に配置された基板（図示せず）上に蒸着され、その結果、該基板上には高品質の蒸着膜が生成される。   Then, the powder material is evaporated or melted by thermal plasma of about 10,000 degrees, and further, a chemical reaction such as oxidation or nitridation is caused by the bimolecular gas supplied at the same time. Then, vapor deposition is performed on a substrate (not shown) disposed in the chamber 15, and as a result, a high quality vapor deposition film is formed on the substrate.

さて、前記プローブ中心孔Ｈ内のパイプＱ´を介して、蒸着すべき粉末材料をキャリアガス（例えば、アルゴンガス）と共に該プラズマＰの中心部に供給する際、前記パイプＱ´はその先端が前記プローブの先端と面一に成る様に該プローブ中心孔Ｈと係合状態にあるので、該パイプ内の粉末材料を含むキャリアガスは少なくともプローブ１１´内で拡散することなく、前記プラズマＰの中心部に供給される。従って、該プラズマが不安定な状態になることはなく、その為、粉末材料の溶融に斑が発生する等の問題は発生しない。   When the powder material to be deposited is supplied to the center of the plasma P together with a carrier gas (for example, argon gas) through the pipe Q ′ in the probe center hole H, the pipe Q ′ has a tip at the tip. Since it is in engagement with the probe center hole H so as to be flush with the tip of the probe, the carrier gas containing the powder material in the pipe does not diffuse at least in the probe 11 ′, and the plasma P Supplied in the center. Therefore, the plasma does not become unstable, and therefore, there is no problem such as generation of spots in the melting of the powder material.

又、前記パイプＱ´の先端部が前記プローブ中心孔Ｈの先端部に接触しているので、該プローブ内に循環している冷却水により該パイプの先端が冷却される。その結果、前記熱プラズマによる前記パイプ先端部分の加熱の影響を緩和することが出来、パイプの交換サイクルを長くすることが出来る。   Further, since the tip end portion of the pipe Q ′ is in contact with the tip end portion of the probe center hole H, the tip end of the pipe is cooled by the cooling water circulating in the probe. As a result, the influence of heating of the pipe tip portion by the thermal plasma can be mitigated, and the pipe replacement cycle can be lengthened.

尚、前記例では、前記パイプ外面の先端部分全体に雄ねじを形成し、前記プローブのパイプ挿入孔内面の先端部分全体に雌ねじを形成する様にしたが、前記パイプ外面先端部分の一部に雄ねじを形成し、前記パイプ挿入孔内面先端部分の一部に雌ねじを形成する様にしても良いし、又、前記パイプ外面全体に雄ねじを形成し、前記パイプ挿入孔内面全体に雌ねじを形成しても良い。
又、前記例では、前記プローブの挿入孔内面の少なくとも先端部分に雄ねじの如き係合部を形成し、前記パイプ外面の少なくとも先端部分に前記係合部に対して係脱可能な雌ねじの如き被係合部をそれぞれ形成したが、この様な構造に限定されない。例えば、前記プローブの挿入孔内面の少なくとも先端部分に凸部若しくは凹部の如き係合部を形成し、前記パイプ外面の少なくとも先端部分に前記係合部に対して係脱可能な凹部若しくは凸部の如き被係合部をそれぞれ形成する様にしても良い。 In the above example, a male screw is formed on the entire tip portion of the outer surface of the pipe, and a female screw is formed on the entire tip portion of the inner surface of the pipe insertion hole of the probe. A female screw may be formed on a part of the inner end portion of the pipe insertion hole, a male screw may be formed on the entire outer surface of the pipe, and a female screw may be formed on the entire inner surface of the pipe insertion hole. Also good.
In the above example, an engagement portion such as a male screw is formed at least at the tip of the inner surface of the insertion hole of the probe, and a cover such as a female screw that can be engaged with and disengaged from the engagement portion at least at the tip of the outer surface of the pipe. Although the engaging portions are formed, the present invention is not limited to such a structure. For example, an engaging portion such as a convex portion or a concave portion is formed at least at the tip portion of the inner surface of the insertion hole of the probe, and a concave portion or a convex portion that can be engaged with or disengaged from the engaging portion is provided at least at the tip portion of the pipe outer surface. Such engaged parts may be formed respectively.

従来の高周波誘導熱プラズマ装置を示している。1 shows a conventional high frequency induction thermal plasma apparatus. 従来の高周波誘導熱プラズマ装置の主要部を成すトーチの構成要素であるプローブの概略を示す。The outline of the probe which is a component of the torch which comprises the principal part of the conventional high frequency induction thermal plasma apparatus is shown. 本発明の高周波誘導熱プラズマ装置の主要部を成すトーチの構成要素であるプローブの概略を示す。1 shows an outline of a probe that is a component of a torch that constitutes a main part of a high-frequency induction thermal plasma apparatus of the present invention.

符号の説明Explanation of symbols

１…トーチ
２…円筒部材
３…ガスリング
４…誘導コイル
５ａ…上部フランジ
５ｂ…下部フランジ
６…支持棒
７…ネジ
８…高電圧発生装置
９…出口通路
１０…入口通路
１１、１１´…プローブ
１２…入口
１３…出口
１４…冷却水路
１５…チャンバー
１６…冷却水通路
１７…供給路
Ｐ…プラズマ
Ｑ、Ｑ´…パイプ
Ｈ…プローブ中心孔 DESCRIPTION OF SYMBOLS 1 ... Torch 2 ... Cylindrical member 3 ... Gas ring 4 ... Inductive coil 5a ... Upper flange 5b ... Lower flange 6 ... Support rod 7 ... Screw 8 ... High voltage generator 9 ... Outlet passage 10 ... Inlet passage 11, 11 '... Probe DESCRIPTION OF SYMBOLS 12 ... Inlet 13 ... Outlet 14 ... Cooling water channel 15 ... Chamber 16 ... Cooling water channel 17 ... Supply channel P ... Plasma Q, Q '... Pipe H ... Probe center hole

Claims (6)

絶縁性物質で形成された管と、該管の一端に設けられ、プラズマガスを該管内に供給するためのガスリングと、被加熱材料とキャリアガスを前記管内に供給するためのパイプが挿入されて、前記ガスリングの中心軸に沿って設けられたプローブと、該プローブを冷却する冷却機構と、前記管の外側に巻かれた誘導コイルを備え、該誘導コイルに高周波電力を供給することによって前記管内に高周波誘導熱プラズマを発生させる様に成した高周波誘導熱プラズマ装置において、前記プローブのパイプ挿入孔内の少なくとも先端部分に係合部を、前記パイプの少なくとも先端部分に前記係合部に対して係脱可能な被係合部をそれぞれ形成したことを特徴とする高周波誘導熱プラズマ装置。   A tube made of an insulating material, a gas ring for supplying plasma gas into the tube, and a pipe for supplying a material to be heated and a carrier gas into the tube are inserted. A probe provided along the central axis of the gas ring, a cooling mechanism for cooling the probe, and an induction coil wound on the outside of the tube, and supplying high-frequency power to the induction coil In the high-frequency induction thermal plasma apparatus configured to generate high-frequency induction thermal plasma in the pipe, an engagement portion is provided at least at a tip portion in the pipe insertion hole of the probe, and the engagement portion is provided at least at a tip portion of the pipe. A high frequency induction thermal plasma apparatus characterized in that engaged parts that can be engaged and disengaged are formed respectively. 前記プローブのパイプ挿入孔内に形成されている係合部は雌ねじから成り、前記パイプに形成されている被係合部は雄ねじから成ることを特徴とする請求項１記載の高周波誘導熱プラズマ装置。   2. The high frequency induction thermal plasma apparatus according to claim 1, wherein the engaging portion formed in the pipe insertion hole of the probe is formed of a female screw, and the engaged portion formed of the pipe is formed of a male screw. . 前記プローブのパイプ挿入孔内に形成されている係合部は凹状体又は凸状体から成り、前記パイプに形成されている被係合部は凸状体又は凹状体から成ることを特徴とする請求項１記載の高周波誘導熱プラズマ装置。   The engaging portion formed in the pipe insertion hole of the probe is formed of a concave body or a convex body, and the engaged portion formed in the pipe is formed of a convex body or a concave body. The high frequency induction thermal plasma apparatus according to claim 1. 前記パイプの先端が前記プローブの先端と面一と成る様に前記パイプの被係合部が前記プローブのパイプ挿入孔内の係合部に係合されていることを特徴とする請求項１記載の高周波誘導熱プラズマ装置。   2. The engaged portion of the pipe is engaged with an engaging portion in a pipe insertion hole of the probe so that the tip of the pipe is flush with the tip of the probe. High frequency induction thermal plasma device. 前記パイプの先端が前記プローブの先端と面一と成る様に前記パイプが前記プローブのパイプ挿入孔内にねじ込まれていることを特徴とする請求項２記載の高周波誘導熱プラズマ装置。   The high frequency induction thermal plasma apparatus according to claim 2, wherein the pipe is screwed into a pipe insertion hole of the probe so that the tip of the pipe is flush with the tip of the probe. 前記パイプの先端が前記プローブの先端と面一と成る様に前記パイプが前記プローブのパイプ挿入孔内に嵌め込まれていることを特徴とする請求項３記載の高周波誘導熱プラズマ装置。   4. The high frequency induction thermal plasma apparatus according to claim 3, wherein the pipe is fitted into a pipe insertion hole of the probe so that a tip of the pipe is flush with a tip of the probe.
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JPH0574591A (en) * 1991-09-09 1993-03-26 Sansha Electric Mfg Co Ltd Induction plasma torch
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JPS61183896A (en) * 1985-02-09 1986-08-16 住友電気工業株式会社 High frequency induction plasma torch
JPH0574591A (en) * 1991-09-09 1993-03-26 Sansha Electric Mfg Co Ltd Induction plasma torch
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2020096048A1 (en) * 2018-11-08 2021-10-14 株式会社Ｈｅｌｉｘ Disassembly processing equipment
JP7171082B2 (en) 2018-11-08 2022-11-15 株式会社Helix decomposition treatment equipment

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