JP2010129729A - Sensor-holding substrate and substrate with sensor using the same, and method of manufacturing sensor-holding substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sensor-holding substrate capable of shortening a vibration damping time. <P>SOLUTION: The sensor-holding substrate of ≥0.03 m<SP>2</SP>in area and ≥0.0003 m in thickness is characterized in that when the diameter of the largest circle contained in a backside of a body is represented as C (m), the gravitational bending when the body is horizontally supported between the circle and a circuit which is concentric therewith and whose diameter is 0.01 m shorter is ≤1.5 time as large as ω. Here, ω=ä(5+υ)pa<SP>4</SP>}/ä64(1+υ)D}, wherein D=Eh<SP>3</SP>/ä12(1-υ<SP>2</SP>)}, and υ is a Poisson's ratio, (p) is a gravitational uniform load (Pa), (a) is C/2 (m), ρ is a density (kg/cm<SP>3</SP>), E is a Young's modulus, and (h) is a thickness (m). <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a sensor holding substrate, a sensor-equipped substrate using the same, and a method for manufacturing a sensor holding substrate.

  In a photolithography process in manufacturing a semiconductor device, a heat treatment for heating and cooling a semiconductor wafer (hereinafter referred to as “wafer”) is performed by a heating and cooling device. In this heating / cooling process, one important technique is to set the wafer to a predetermined temperature. The temperature of the wafer and its distribution are measured and predicted in advance using a dummy wafer, and then the temperature control conditions for film formation on the wafer are determined. The temperature and the temperature of the dummy wafer are measured by attaching a plurality of sensors to the dummy wafer so that the entire dummy wafer is as uniform as possible. In order to form a film on a large number of wafers in a more rapid cycle, it is necessary to advance the cycle of loading and unloading the wafer to and from this apparatus as early as possible in the film forming process on the wafer. For this reason, the wafer that is carried into and out of the heating / cooling device may bend by acceleration and the dummy wafer may subsequently vibrate.

Patent Document 1 discloses a dummy wafer comprising a polycrystalline aluminum oxide sintered body having an average strength of 450 MPa or more, an average crystal grain size of 5 μm or less, a bulk density of 3980 kg / m ³ or more, and a purity of 99.9% by mass or more. Are listed.
JP-A-8-17888

  If the temperature or the like is measured in a state where the dummy wafer is vibrating, it is considered that the sensor may malfunction or an error in transmitting / receiving a signal from the sensor may occur, resulting in an inaccurate temperature measurement. For this reason, it is preferable to shorten the time from when the dummy wafer is bent until the vibration is attenuated and disappears.

  The dummy wafer described in Patent Document 1 may have a long vibration damping time after bending.

  The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a sensor holding substrate, for example, a dummy wafer, which can shorten the vibration attenuation time.

A sensor holding substrate according to an embodiment of the present invention has a substrate with an area of 0.03 m ² or more and a thickness of 0.0003 m or more, and the diameter of the largest circle included in the lower surface of the substrate is C (m ), The deflection due to its own weight when the substrate is supported horizontally between this circle and a circle that is concentric with the circle and is 0.01 m shorter is 1.5 times the following formula ω. It is characterized by the following.

ω = {(5 + υ) pa ⁴ } / {64 (1 + υ) D} (m)
However,
D = Eh ³ / {12 (1-υ ² )}
υ: Poisson's ratio (-)
p: Uniformly distributed load due to its own weight (Pa)
a: C / 2 (m)
ρ: Density (kg / m ³ )
E: Young's modulus (Pa)
h: thickness (m)
In addition, the sensor-equipped substrate according to one embodiment of the present invention is characterized in that the sensor is disposed on the sensor holding substrate.

  Furthermore, in the method for manufacturing a sensor holding substrate according to one aspect of the present invention, a substrate made of a ceramic sintered body is subjected to hot isostatic pressing, and then heat-treated at a temperature lower than the hot isostatic pressing temperature. It is characterized by doing.

  According to the sensor holding substrate according to one aspect of the present invention, the vibration attenuation time after bending is short.

  In addition, according to the sensor-equipped substrate according to one embodiment of the present invention, since the sensor is attached to the sensor holding substrate having a short vibration damping time, malfunction of the sensor can be reduced.

  According to the method for manufacturing a sensor holding substrate according to one aspect of the present invention, it is possible to easily manufacture a sensor holding substrate capable of shortening the bending attenuation time.

  The best mode for carrying out the present invention will be described.

First, a description will be given with reference to FIGS. The sensor holding substrate 30 has a ceramic substrate 2 having an area of 0.03 m ² or more and a thickness of 0.0003 m or more. The circle included in the lower surface of the ceramic substrate 2, that is, the maximum that can be supported on one main surface 4 a. When the diameter of the circle is C (m), the ceramic substrate 2 is placed horizontally at a position (support circle 3) that supports between this circle and a circle that is concentric with the circle and that is 0.001 m shorter in diameter. The deflection of the main body (sensor holding substrate 30 including the ceramic substrate 2 and the accessory such as the conductor 6) due to its own weight when it is supported on the substrate is 1.5 times or less of ω represented by the following formula (1). .

ω = {(5 + υ) pa ⁴ } / {64 (1 + υ) D} (m) (1)
However,
D = Eh ³ / {12 (1-υ ² )}
υ: Poisson's ratio (−) of the sensor holding substrate 30
p: Uniform load (Pa) due to the weight of the sensor holding substrate 30
a: C / 2 (m)
ρ: density of the sensor holding substrate 30 (kg / m ³ )
E: Young's modulus (Pa) of the sensor holding substrate 30
h: Thickness (m) of sensor holding substrate 30
In the formula (1), p is determined by ^{p = (9.80665a 2 πhρ) /} (a 2 π) = 9.80665hρ (Pa).

  When the conductor 6, the alignment marks 8a and 8b, the wiring 10 and the like are not disposed on the sensor holding substrate 30, that is, when the sensor holding substrate 30 is made only of a ceramic sintered body, the equation (1) “Sensor holding substrate” is read as “ceramic substrate”.

  According to the sensor holding substrate 30 having such a configuration, there is an effect that the vibration attenuation time after bending can be shortened.

The sensor holding substrate 30 has a relatively large surface area of 0.03 m ² or more and a relatively large mechanical strength of 0.0003 m or more in thickness. When the area is less than 0.03 m ² , the vibration damping time is short, which is not a problem. When the thickness is less than 0.0003 m, the mechanical strength is small, and when vibration is applied, the probability of destruction is high.

  In the formula (1), the density can be measured by the Archimedes method. When it is difficult to measure the density by the Archimedes method, such as when the size of the sensor holding substrate 30 is large, the value obtained by dividing the weight of the sensor holding substrate 30 by the volume is used as the density of the sensor holding substrate 30. It may be used. The thickness h is an average value obtained by measuring a plurality of locations on the sensor holding substrate 30.

  Young's modulus and Poisson's ratio can be measured using an ultrasonic pulse method. The measurement method is specifically as follows. In 5.3.2 (1) of Japanese Industrial Standards JISR1602-1995 Testing methods for elastic modulus of fine ceramics, the size of the test piece is specified. In the case of 30, the sensor holding substrate 30 itself is used as a sample piece for measurement. As a measuring device, for example, Panametrics HV pulser-receiver Model 5058PR can be used. The frequencies used for the measurement are a longitudinal wave frequency of 5000 to 8000 kHz and a transverse wave frequency of 2000 to 5000 kHz. A Tektronix 23422A 250MS / s Digital Oscilloscope can be used for data analysis. The measurement temperature is preferably room temperature, more preferably about 25 ° C. Moreover, when measuring the Young's modulus and Poisson's ratio by the ultrasonic pulse method, it is preferable to measure at least 5 times per test piece and obtain the average value.

  If the sensor holding substrate 30 is too large to measure the Young's modulus and Poisson's ratio, the sensor holding substrate 30 is processed into a square with a side length of 0.2 m. A test piece for measuring the ratio is measured by an ultrasonic pulse method.

  Even when conductors 6, alignment marks 8a and 8b, and wirings 10, which will be described later, are disposed on the sensor holding substrate 30, ω is often substantially the same. The unit of ω is (m) according to the equation (1), but the deflection of the sensor holding substrate 30 is usually several μm to several hundreds of μm, so the unit of ω is generally changed from (m) to (μm). Convert.

  The deflection due to its own weight can be measured by the own-weight deflection measuring device 50 shown in FIGS. 4 (a) and 4 (b). 4A is a perspective view of the self-weight deflection measuring device, and FIG. 4B is a partial cross-sectional view of FIG. The self-weight deflection measuring device 50 includes a base 42, guide guides 44a, 44b, 44c fixed to the base 42, and a movable body 48a. The guide guides 44a and 44b are parallel to each other and guide the movable body 48a in the Y direction perpendicular to the X direction. The X direction and the Y direction are set in directions parallel to gravity. The guide 44c guides the movable body 48a in the X direction. The laser projecting body 48 is fixed to the movable body 48a, and can move with the movable body 48a in a plane formed in the X direction and the Y direction. The sensor holding substrate 30 is fixed to the base 30 by a plurality of fixing jigs 46. The laser beam 52 emitted from the laser projecting body 48 is applied to the sensor holding substrate 30 and reflected. The reflected light of the laser beam 52 passes through the movable body 48a and is sent to an analysis device (not shown), and the distance between the laser projecting body 48 and the sensor holding substrate 30 is measured at a plurality of locations over the entire main surface 4b. To do. As a result, the deflection amount (bending distance) S of the sensor holding substrate 30 can be measured. The sensor holding substrate 30 that satisfies Expression (1) has a short vibration damping time after bending. The reason for the short decay time of the sensor holding substrate 30 is considered to be because the internal stress of the ceramic substrate 2 constituting the main body is small.

  The bending decay time can be measured using the vibration measuring apparatus shown in FIG. FIG. 5A is a cross-sectional view of the vibration measuring apparatus, and FIG. The vibration measuring device 70 includes a surface plate 54 made of stone or the like, and a clamping jig 56 to which the surface plate 54 is fixed. One end of the sensor holding substrate 30 is clamped and fixed by the clamping jig 56. . In a state where the sensor holding substrate 30 is fixed to the jig 56, the upper portion of one end where the sensor holding substrate 30 is sandwiched and the upper portion (the other end) on the main surface 4b farthest from the one end are horizontal. Then, when the other end is opened, the other end is bent by its own weight. The amount of displacement in this bent state is set to zero. From the state of zero displacement, the other end of the sensor holding jig 30 is pressed by a predetermined distance M using a jig (not shown) and displaced to the displacement point E, and the force pressed by the jig is instantaneously applied. Open. Thereafter, the sensor holding substrate 30 vibrates up and down with the displacement point E as a starting point, the amplitude attenuates with the passage of time, and eventually the amplitude disappears.

  In the process in which the vibration is attenuated after the sensor holding substrate 30 is displaced to the displacement point E, the amount of displacement of the sensor holding substrate 30 is specified over time. When the laser beam 52 is irradiated from the laser beam irradiation device 48 provided on the upper part of the sensor holding substrate 30 to the other end of the sensor holding substrate 30, the laser beam 52 is emitted from the main surface 4 b of the sensor holding substrate 30. Reflected light is observed. The incident light and reflected light signals of the laser are sent to the signal amplifier 58 and further analyzed by the oscilloscope 60, and the amplitude (displacement amount) of the other end of the main surface 4b of the sensor holding substrate 30 is measured over time. be able to.

  FIG. 6 is an example of a vibration attenuation curve of the sensor holding substrate 30 measured using the vibration measuring apparatus of FIG. The vertical axis represents the amount of displacement (mm) in the vertical direction, and the horizontal axis represents time (seconds). It can be seen that the vibration of the sensor holding substrate 30 is attenuated within approximately 1 to 2 seconds.

  As shown in FIG. 1A, the sensor holding substrate 30 preferably has a disk shape. Since it is circular, the vibration attenuation time can be shortened. The reason why the vibration holding time can be shortened when the sensor holding substrate 30 is circular is that there is little so-called torsional vibration that vibrates when the main surfaces 8a and 8b are twisted.

  In order to facilitate optical identification of a sensor or the like while shortening the vibration attenuation time, it is preferable that the ceramic substrate 2 contains alumina as a main component. This is because alumina can easily be made of white-colored ceramic, so that it can be easily optically distinguished from the sensor or the like with the position sensor or the like attached.

  The sensor holding substrate 30 in which the conductor 6 is formed in the plurality of through holes 14 penetrating both the main surfaces 4a and 4b of the ceramic substrate 2 can not only shorten the vibration attenuation time, but also can reduce both the main surfaces 4a and 4b. Since a path for electrically joining the surfaces 4a and 4b is formed, a signal generated from the sensor 22 or the like can be directly transmitted between the main surfaces 4a and 4b. The conductor 6 can be bonded to the side surface of the through hole 14 via the bonding material 16. The material of the conductor 6 is preferably a metal of Ti, Pt, W, Cr, Rh, Ru, or Ir that has the characteristics of low electrical resistance and easy bonding with ceramics. In particular, the conductor 6 is preferably Ti having a characteristic that the thermal expansion coefficient is relatively small. As a material of the bonding material 16, an Ag—Cu—Ti raw material is preferable. As a composition of Ag-Cu-Ti, for example, a brazing material having a composition of Ag 50 to 70 mass%, Cu 20 to 45 mass%, and Ti 5 to 10 mass% is used.

  Specifically, the conductor 6 made of Ti can be bonded using an AgCuTi row as follows. The through-hole 14 is filled with a paste-like Ag—Cu—Ti raw material, and a Ti pin is inserted. After the paste is dried and solidified, when heated and cooled to about 800 ° C., the Ag—Cu—Ti brazing material joins the Ti pin as the Ti conductor 6 and the ceramic substrate 2.

  Alignment marks 8 a and 8 b are preferably formed on the peripheral edge of the ceramic substrate 2. More preferably, the alignment marks 8a and 8b are formed such that a column 18 made of black ceramic penetrates both the main surfaces 8a and 8b. Thereby, the position on the main surface 8a of the sensor holding substrate 30 can be accurately measured by a laser or the like.

  The alignment marks 8a and 8b can be used to accurately position the main surfaces 8a and 8b of the sensor holding substrate 30. In this method, the pitch of the alignment marks 8a and 8b is measured with a camera, and the center point thereof is set as the origin. Since the origin is accurately determined, a wiring pattern such as a conductor wiring can be accurately formed on the sensor holding substrate 30 from the origin.

  The alignment marks 8a and 8b can be formed by preparing a cylindrical column made of black alumina and bonding and solidifying the through hole 18 using an epoxy adhesive. Black alumina contains, for example, elements such as iron, cobalt, and manganese as pigments.

  As shown in FIG. 3, the sensor-equipped substrate 40 in which the sensor 22 is arranged on the sensor holding substrate 30 has the sensor 22 attached to the sensor holding substrate 30 having a short vibration attenuation time. Can be reduced. The sensor 22 is a temperature sensor, for example. A signal transmitted from each sensor 22 is extracted from the signal extraction member 12 through the wiring 10, and the temperature at the position of each sensor 22 can be measured. The temperature of each sensor 22 can be measured by detecting a signal transmitted from the sensor 22 and converting it to a temperature. An adhesive or the like can be used to attach the sensor 22 to the sensor holding substrate 30.

  A method for manufacturing the sensor holding substrate 30 will be specifically described using a case where the ceramic substrate 2 is made of alumina.

As a starting material, a high-purity alumina powder and a small amount of MgCO ₃ , CaCO ₃ , and SiO ₂ powders that act as a sintering aid during firing are mixed and wet crushed to produce a slurry. An organic binder is added and mixed, and then spray dried to produce granules. A molded body having a diameter of 370 to 400 mm and a thickness of 6 to 20 mm is produced from the obtained granules by a known molding method. Thereafter, the surface of the molded body is slightly cut as necessary. The obtained molded body is fired at 1550 to 1650 ° C. in the atmosphere to produce a sintered body. The obtained sintered body was heat-treated by a HIP (hot isostatic pressing) method in Ar gas at a temperature lower than the firing temperature and in the range of 1500 to 1600 ° C. under the condition of 200 Mpa. A porous alumina body is produced. The obtained dense alumina body is kept at a temperature lower than the heat treatment temperature by the HIP method at 1400 to 1550 ° C. in the atmosphere for at least 5 minutes, so-called annealing. After annealing, both main surfaces are polished with a diamond electrodeposition grindstone using a rotary grinder to form a disc having a thickness of about 1 mm. The obtained disk is machined into a diameter of 8 inches or 12 inches using a laser processing machine, and a through-hole 14 for joining a Ti pin made of a conductor 6 having a diameter of 0.3 to 1 mm. A through-hole 18 for forming an alignment mark 18 made of cylindrical black alumina is formed. The manufacturing method of the conductor 6 made of Ti pin and the alignment marks 8a and 8b made of black alumina is as described above. After the conductor 6 and the alignment marks 8a and 8b are formed, both main surfaces are further precisely polished to a thickness of 775 μm. As a result, the sensor holding substrate 30 shown in FIG. 1 is obtained.

  Further, as shown in FIG. 2, a sensor holding substrate 30 in which the wiring 10 made of a conductor is joined to the signal extraction member 12 can be produced.

  In the above manufacturing method, the sensor holding substrate 30 is manufactured by a manufacturing method in which a substrate made of a ceramic sintered body is hot isostatically pressed and then heat-treated (annealed) at a temperature lower than the hot isostatically applied temperature. Thus, a sensor holding substrate capable of shortening the bending decay time can be manufactured. It is considered that the bending decay time is shortened because the internal stress remaining in the dense alumina body is reduced by annealing.

<Example>
The sensor holding substrate 30 of FIG. 1 was prepared by forming the conductor 6 made of Ti pins and the alignment marks 8a and 8b made of black alumina. The material of the ceramic substrate 2 is as shown in Table 1.

[When the material is alumina]
As a starting material, a high-purity alumina powder and a small amount of MgCO ₃ , CaCO ₃ , and SiO ₂ powders that act as a sintering aid during firing are mixed and wet crushed to produce a slurry. After adding and mixing the organic binder, it was spray-dried to produce granules. A cylindrical body was obtained from the obtained granules by a rubber press method. The cylindrical body was processed into a diameter of 380 mm and a thickness of 14 mm to produce a molded body. The obtained molded body was fired at 1600 ° C. in the atmosphere to produce a sintered body. The obtained sintered body was heat-treated in Ar gas under the conditions of 1550 ° C. and 200 Mpa by HIP (hot isostatic pressing) method to produce a dense body. The obtained dense body was annealed in the atmosphere at 1500 ° C. for 2 hours or at 1450 ° C. for 2 hours. After the annealing, both main surfaces were polished with a diamond electrodeposition grindstone of # 140 using a rotary grinder to make a disc having a thickness of 1 mm. Using the CO ₂ laser processing machine, the obtained disc was 8 inches (203.2 mm), 12 inches (304.8 mm) and 16 inches (406.4 mm) in diameter as shown in Table 1. The through hole 14 for processing any of them and further forming an alignment mark 18 made of cylindrical black alumina having a diameter of 2 mm and a through hole 14 for joining a Ti pin having a diameter of 0.5 mm were formed. The conductor 6 made of Ti pin was joined with the above-described Ag—Cu—Ti raw material, and the alignment marks 8a and 8b made of black alumina were joined with an epoxy adhesive. After the conductor 6 and the alignment marks 8a and 8b were formed, both main surfaces were further precisely polished to finish the thickness as shown in Table 1. Thereby, the sensor holding substrate 30 shown in FIG. 1 was produced.

[When the material is silicon carbide]
A sensor holding substrate 30 was produced in the same manner as when the material was alumina. The part different from the manufacturing method in the case of the said alumina is described. 95% by weight of α-SiC powder having an average particle size of 0.6 μm, 4% by weight of α-Al ₂ O ₃ powder having an average particle size of 0.6 μm, and 1% of Y ₂ O ₃ powder having an average particle size of 0.8 μm % Powder was mixed and pulverized in methanol, a binder was added and mixed, and the resulting slurry was spray-dried to produce granules. Firing was carried out by holding at 2000 ° C. for 1 hour in an Ar gas stream. HIP was 1850 ° C. and 200 MPa in Ar gas. Annealing was performed at 1800 ° C. for 2 hours or at 1750 ° C. for 2 hours in 1 atmosphere of Ar gas.

[When the material is silicon nitride]
A sensor holding substrate 30 was produced in the same manner as when the material was alumina. The part different from the manufacturing method in the case of the said alumina is described. 89% by mass of silicon nitride powder (BET specific surface area 9 m ² / g, α rate 98%, oxygen content 1.2% by weight), 5% by mass of yttrium oxide powder (average particle size 1.5 μm), aluminum oxide powder ( A powder containing 3 mass% of purity 99.9 mass%, average particle diameter 2 μm) and 3 mass% of silicon dioxide powder (purity 99.9 mass%, average particle diameter 2 μm) is wet-mixed in methanol, and binder is added. Added and spray dried to produce granules. Firing was carried out under the condition of placing in a slag bowl made of silicon carbide and holding at 1300 ° C. for 5 hours under a nitrogen atmosphere at normal pressure, and further holding at 1750 ° C. for 5 hours. Thereafter, it was cooled at a rate of 80 ° C./min to obtain a silicon nitride sintered body. HIP was 1600 ° C. and 200 MPa in nitrogen gas. Annealing was carried out at 1550 ° C. for 2 hours or at 1500 ° C. for 2 hours in nitrogen gas at 1 atmosphere.

[When the material is zirconia]
Except for the method described below, the sensor holding substrate 30 was produced in the same manner as in the case where the material was alumina. A powder containing 96 mol% of zirconia oxide powder having an average particle size of 0.2 μm and 4 mol% of yttrium oxide powder was wet-ground with water, further added with a binder and spray-dried to prepare granules. Firing was held at 1500 ° C. in air for 3 hours. HIP was 1350 ° C. and 200 MPa in Ar gas. Annealing was carried out at 1300 ° C. for 2 hours in the atmosphere or 1250 ° C. for 2 hours.

  The density of the sensor holding substrate 30 was obtained by dividing the weight of the sensor holding substrate 30 by the volume.

  Young's modulus and Poisson's ratio were measured using an ultrasonic pulse method. The measurement apparatus used was a Panametrics HV pulser-receiver Model 5058PR and a Tektronix 23422A 250MS / s Digital Oscilloscope. The frequencies used for the measurement were a longitudinal wave frequency of 5000 to 8000 kHz and a transverse wave frequency of 2000 to 5000 kHz. The measurement temperature is 25 ° C. For each sample, Young's modulus and Poisson's ratio were measured five times to obtain an average value.

[Self-weight deflection]
Self-deflection (μm) was measured using the heavy deflection measuring apparatus shown in FIG. The diameter of the support circle 3 was set to (C−0.01) m when the maximum diameter was C (diameter of the sensor holding substrate 30). Ω shown in the equation (1) is also calculated and shown in Table 1. In Table 1, mm and μm are used as the unit of length for convenience. Further, the diameter of C is displayed by rounding down below the decimal point.

[Vibration damping time]
The vibration attenuation curve of the obtained sensor holding substrate 30 was measured using the vibration measuring apparatus shown in FIG. In FIG. 5, M is 5 mm. Further, the portions of the main surfaces 4a and 4b sandwiched by the jig 56 are from one end of the main surfaces 4a and 4b on the jig 56 side to the center side of the ceramic substrate 2 of 8 mm. The results are shown in Table 1. FIG. 13 is a vibration attenuation curve.
<Comparative example>
Sample No. 4 was the same as in the example except that no annealing was performed. Samples marked with * were prepared and evaluated in the same manner as in the examples. The results are shown in Table 1. FIG. 15 is a vibration attenuation curve.
<Discussion>
When comparing sansa holding substrates having the same material, diameter, and thickness, the sample of the example in which the value of z / ω is 1.5 or less is the sample of the comparative example in which the value of z / ω exceeds 1.5. In comparison, it was found that the vibration damping time was shorter than half. By performing the annealing process after the HIP, it was possible to manufacture the sansa holding substrate 30 with a short vibration damping time.

(A), (b) is a perspective view of the sensor holding substrate of one embodiment of the present invention, respectively, (c) is a plan view showing the position when supporting one main surface of (a), (d). (A) is a top view which shows the position at the time of supporting the one main surface of (b), (e) is a partially expanded sectional view of (a), (f) is a partially expanded sectional view of (b). It is a figure explaining the sensor holding substrate which concerns on one form of this invention, and is a perspective view of the sensor holding substrate which gave electrical wiring. 3 is a perspective view showing a state where a sensor 22 is attached to a sensor holding substrate 30. FIG. (A) is a perspective view of a self-weight deflection measuring apparatus, (b) is a partial sectional view of (a). (A) is sectional drawing of a vibration measuring device, (b) is a top view. It is an example of the vibration attenuation | damping curve of the sensor holding board | substrate which concerns on one Embodiment of this invention measured using the vibration measuring apparatus. 4 is a vibration attenuation curve of a sensor holding substrate outside the scope of the present invention.

Explanation of symbols

2: Ceramic substrates 3a, 3b, 3c: Support positions 4a, 4b: Main surface 6: Metal posts 8a, 8b: Alignment mark 10: Wiring 12: Signal extraction member 14, 18: Through hole 16: Adhesive 20: Low Material 22: Sensor 30: Sensor holding substrate 40: Sensor-equipped substrate 42: Bases 44a, 44b, 44c: Guide guide 46: Fixing jig 48: Laser projectile 48a: Fixed member 50: Self-weight deflection measuring device 52: Laser beam 54: Surface plate 56: Jig 70: Vibration measuring device

Claims (7)

If the substrate has an area of 0.03 m ² or more and a thickness of 0.0003 m or more, and the diameter of the largest circle included in the lower surface of the substrate is C (m), And a concentric and short circle having a diameter of 0.01 m, the deflection due to its own weight when the substrate is supported horizontally is 1.5 times or less of the following formula ω, .
ω = {(5 + υ) pa ⁴ } / {64 (1 + υ) D} (m)
However,
D = Eh ³ / {12 (1-υ ² )}
υ: Poisson's ratio (-)
p: Uniformly distributed load due to its own weight (Pa)
a: C / 2 (m)
ρ: Density (kg / m ³ )
E: Young's modulus (Pa)
h: thickness (m) The sensor holding substrate according to claim 1, wherein the substrate has a disk shape. The sensor holding substrate according to claim 1, wherein the substrate is made of ceramics mainly composed of alumina. The sensor holding substrate according to claim 1, wherein a plurality of conductors penetrate both main surfaces of the substrate. The sensor holding substrate according to claim 1, wherein an alignment mark is formed on a peripheral portion of the substrate. A sensor-equipped substrate, wherein the sensor is disposed on the sensor holding substrate according to claim 1. A method for producing a sensor holding substrate, comprising subjecting a substrate made of a ceramic sintered body to hot isostatic pressing and then heat-treating the substrate at a temperature lower than the hot isostatic pressing temperature.

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