JP2010121144A - Film-forming apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film-forming apparatus which can improve coverage properties within a substrate in film formation, does not form a defective part originating in the foreign matter even when there is the foreign matter, can prevent the ingress of oxygen and moisture from the outer part, and can secure the reliability of a thin film. <P>SOLUTION: This film-forming apparatus includes a vacuum container which accommodates a substrate W therein, a plurality of pairs of hearths 4A, 4B, 5A and 5B which are arranged in this vacuum container so as to oppose to the substrate W, and plasma guns 6 and 7 which irradiate these hearths 4A, 4B, 5A and 5B with plasma beams; and forms the film on the substrate W while switching hearths between the hearths 4A and 4B and the hearths 5A and 5B in time series. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a film forming apparatus.

Conventionally, as a kind of flat panel display (FPD), an organic EL device including a plurality of organic electroluminescence elements (organic EL elements) in which an organic light emitting layer is sandwiched between a pair of electrodes is known. The organic EL device includes an element substrate including a sealing layer that covers a plurality of organic EL elements, and a sealing substrate that is disposed opposite to the element substrate and bonded via an adhesive layer. ing.
As a light emission method of the organic EL device, a bottom emission method in which light emitted from the organic EL element is extracted from a substrate side on which the organic EL element is formed, and a substrate on which the organic EL element is formed on which light emitted from the organic EL element is formed. There is a top emission method that is taken out from the opposite side.

This top emission type organic EL device is easier to increase the pixel aperture ratio than the bottom emission type organic EL device, and has a structure advantageous for high definition and high image quality of the display screen. Furthermore, when combined with a color filter that performs color conversion, a high-performance organic EL device that can take advantage of the top emission structure and can display full color can be obtained.
By the way, in this top emission type organic EL device, in general, the thickness of the organic light emitting film constituting the organic EL element is often extremely thin, such as 100 to several hundred angstroms. When there is a foreign matter, there is a problem that the uniformity of the thin film is lowered due to the influence of the foreign matter.

In particular, in the case of a top emission type organic EL device, this organic layer is often sealed with a thin film sealing layer in order to block oxygen and moisture from entering the organic layer. If it is broken by a foreign material, oxygen and moisture enter from the broken portion to deteriorate the organic layer, which is a serious problem in terms of ensuring reliability.
Therefore, in order to prevent the thin film sealing layer from being affected by foreign substances, an ion plating apparatus as shown in FIG. 9 has been proposed (Patent Document 1).

The ion plating apparatus 1000 includes a vacuum vessel (film formation chamber) 1001, a hearth (deposition source) 1002 disposed in the vacuum vessel 1001, and a plasma gun 1003 that irradiates the hearth 1002 with a plasma beam PB. And a transport mechanism 1004 that transports the substrate W provided in the vacuum container 1001 and facing the hearth 1002.
A film forming material rod 1006 is inserted into the through hole 1005 of the hearth 1002, and a supply device 1007 for gradually pushing up the film forming material rod 1006 is provided below the hearth 1002.

In this ion plating apparatus 1000, a plasma beam PB is irradiated from a plasma gun 1003 into a vacuum vessel 1001. This plasma beam PB is reliably guided to the hearth 1002 by controlling the positive potential of the hearth 1002 to an appropriate value, and heats the upper end portion of the film forming material rod 1006 in the hearth 1002.
In the film forming material rod 1006, the upper end portion is heated to evaporate the film forming material, the evaporated film forming material is ionized in the plasma beam PB, and the ionized film forming material particles are transferred to the substrate W. Is deposited on the surface of the film.
Japanese Patent No. 4087645

By the way, in the conventional ion plating apparatus, in order to increase the utilization efficiency of the film forming material, it is desirable to make the distance between the hearth and the substrate as short as possible, but in this case, the film forming material jumping out of the hearth The incident angle of the particles is greatly different between the central portion and the peripheral portion of the surface of the substrate. Therefore, there is a problem that a difference in coverage of film formation occurs between the position just above the hearth and the peripheral portion.
In particular, when there is a foreign substance during film formation, a part where the film-forming material particles do not wrap around on the back side of the foreign substance does not occur, and therefore a defective part due to the foreign substance also occurs in the obtained thin film sealing layer. Thus, the sealing performance of the thin film sealing layer also has a problem that a difference occurs depending on the location.

For example, as shown in FIG. 10, when forming a film on the substrate W using two hearths 1002a and 1002b, there are the following problems.
The length (L) in the width direction (the direction along the paper surface in FIG. 10) of the substrate W is 400 mm, the distance (D) between the two hearths 1002a and 1002b is 500 mm, and the distance between the substrate W and the hearths 1002a and 1002b (H ) Of 500 mm, there is no difference between the incident angle θ1 of the film forming material particles from the hearth 1002a and the incident angle θ2 of the film forming material particles from the hearth 1002b at the center portion of the substrate W, but is shifted by x mm from the center portion. Thus, a difference of θ1−θ2 is generated between the incident angle θ1 and the incident angle θ2, and a difference of 35 ° or more is generated between the incident angle θ1 and the incident angle θ2 at the end portion of the substrate W. In particular, the film deposition coverage at the peripheral portion of the substrate W is poor.
If the substrate W is rotated, the film deposition coverage at the peripheral portion thereof is improved. However, since the mechanism for rotating the substrate W is large, the cost of the equipment increases, which is not realistic.

  In general, in order to ensure a sufficient sealing performance for the thin film sealing layer, it is desirable to form a thin film having a sealing performance as thick as possible. is there. Therefore, in order to prevent the film formation temperature from rising, film formation may be performed by a plurality of passes by transporting the substrate a plurality of times. In this case as well, film formation material particles from the hearth 1002a Since the difference between the incident angle θ1 and the incident angle θ2 of the film forming material particles from the hearth 1002b is constant, the film forming coverage cannot be improved.

  The present invention has been made to solve the above-described problems, and can improve the coverage of the film formation in the substrate, and even when there is a foreign matter, a defect portion caused by the foreign matter is not present. It is an object of the present invention to provide a film forming apparatus that can prevent the occurrence of oxygen and moisture from the outside and can ensure the reliability of a thin film without causing any risk.

In order to solve the above problems, the present invention provides the following film forming apparatus.
A film forming apparatus according to the present invention includes a vacuum container that accommodates a substrate, a plurality of pairs of vapor deposition sources disposed in the vacuum container and facing the substrate, and a plurality of vapor deposition sources that irradiate the vapor deposition source with a plasma beam. A plasma gun, and by switching the discharge voltage of each of the plurality of pairs of vapor deposition sources in time series for each pair, the particles are evaporated from these vapor deposition sources in time series to form a film on the substrate It is characterized by doing.

According to this configuration, by switching the discharge voltage of each of the plurality of pairs of vapor deposition sources in time series for each pair, the particles are evaporated from these vapor deposition sources in time series to form a film on the substrate. In addition, the difference in the incident angle from the vapor deposition source can be small and the film can be formed without any bias, and the coverage of the film formation in the substrate can be improved.
In particular, even when there is a foreign substance during film formation, it is possible to prevent the formation of a defect portion due to the foreign substance in the thin film by causing the film forming material particles to go around to the back side of the foreign substance. Intrusion of oxygen and moisture from the outside can be prevented, and the reliability of the thin film can be ensured.

In the present invention, among the plurality of pairs of vapor deposition sources, one of the vapor deposition sources and the other vapor deposition source are sequentially arranged in a direction along one side of the substrate, and the plural pairs It is preferable to switch the discharge voltage of the evaporation source in a time series for each pair.
According to this configuration, the vapor deposition source on one side and the vapor deposition source on the other side of each pair of vapor deposition sources are sequentially arranged in a direction along one side of the substrate, and the discharge voltages of a plurality of pairs of vapor deposition sources are applied to each pair. Since each time is switched in time series, the difference in the incident angle from the vapor deposition source is further reduced by using a plurality of vapor deposition sources for each operation, and the coverage of the film formation in the substrate is further improved. Can do.

In the present invention, the vacuum vessel is provided with a transport mechanism for transporting the substrate, and the vapor deposition source on one side of each pair of vapor deposition sources and the vapor deposition source on the other side of the plurality of pairs of vapor deposition sources, It is preferable to sequentially arrange in a direction perpendicular to the substrate transport direction.
According to this configuration, the deposition coverage is improved because the deposition source on one side and the deposition source on the other side of each pair of deposition sources are sequentially arranged in a direction orthogonal to the substrate transport direction. The thin film-coated substrate can be produced efficiently and at low cost.

In the present invention, among the plurality of pairs of vapor deposition sources, one vapor deposition source and the other vapor deposition source of each pair of vapor deposition sources are sequentially arranged in a circular shape to discharge the plural pairs of vapor deposition sources. It is preferable to switch the voltage in time series for each pair.
According to this configuration, the vapor deposition source on one side of each pair of vapor deposition sources and the vapor deposition source on the other side are sequentially arranged in a circular shape, and the discharge voltages of the plural pairs of vapor deposition sources are time-series for each pair. Therefore, by using a pair of vapor deposition sources symmetrically with respect to the center point for each operation, the difference in incident angle from the vapor deposition source is further reduced, and the coverage of the film formation in the substrate is reduced. Can be further improved.

  Another film forming apparatus of the present invention includes a vacuum container that accommodates a substrate, a plurality of transport mechanisms that transport the substrate into the vacuum container, and a pair disposed in the vacuum container and facing the substrate. And a plasma gun for irradiating each of these vapor deposition sources with a plasma beam, and the pair of vapor deposition sources in a direction orthogonal to the conveyance direction of the plurality of conveyance mechanisms and with plane symmetry of these conveyance mechanisms Providing a film on the substrate by switching the plurality of transport mechanisms in a time series manner to switch the transport path of the substrate and evaporating particles from the pair of vapor deposition sources. Features.

According to this configuration, by switching a plurality of transport mechanisms in time series, the transport path of the substrate is switched, and particles are evaporated from the pair of vapor deposition sources to form a film on the substrate. It is possible to perform film formation with a small difference between them, and to improve the coverage of film formation in the substrate.
In particular, even when there is a foreign substance during film formation, it is possible to prevent the formation of a defect portion due to the foreign substance in the thin film by causing the film forming material particles to go around to the back side of the foreign substance. Intrusion of oxygen and moisture from the outside can be prevented, and the reliability of the thin film can be ensured.

The best mode for carrying out the present invention will be described with reference to the drawings.
The embodiment of the present invention shows one aspect of the present invention, and does not limit the present invention, and can be arbitrarily changed within the scope of the technical idea of the present invention.
In the following drawings, in order to make each configuration easy to understand, the scale, number, and the like are different from the actual structure.

“First Embodiment”
FIG. 1 is a cross-sectional view showing a film forming apparatus according to a first embodiment of the present invention, which is an example of a film forming apparatus called an ion plating apparatus.
The film forming apparatus 1 includes a vacuum container 2 that accommodates a substrate W, a substrate transport mechanism 3 that is provided above the vacuum container 2 and transports the substrate W into the vacuum container 2, and a bottom part in the vacuum container 2. Two pairs of hearths (evaporation sources) 4A disposed in a direction (perpendicular to the paper surface in the figure) opposed to the film formation surface of the substrate W and perpendicular to the transport direction (arrow direction in the figure) 4B, 5A, and 5B, a plasma gun 6 that makes the high-density plasma HP enter the hearts 4A and 5A, and a plasma gun 7 that makes the high-density plasma HP enter the hearts 4B and 5B.

Each of the hearths 4A, 4B, 5A, and 5B is filled with a film forming material such as silicon oxide (SiO), and around each of the hearths 4A, 4B, 5A, and 5B, there is a high-density plasma HP that is incident on the hearths. A hearth coil 8 is provided for controlling the direction. A steering coil 9 for controlling the direction of the high-density plasma HP is also provided on the exit side of the high-density plasma HP of the plasma guns 6 and 7, and nitrogen gas (N ₂ ) or the like is introduced into the vacuum vessel 2. A pipe 10 is provided for this purpose.

As shown in FIG. 2, the two pairs of hearths 4A and 4B and the hearths 5A and 5B are configured such that the one side hearths 4A and 5A and the other side hearths 4B and 5B The intervals between adjacent hearts are equal in the direction orthogonal to the direction perpendicular to the plane of the drawing (the left-right direction in FIG. 2), that is, in the direction orthogonal to the direction in which the substrate transport mechanism 3 travels. Are sequentially arranged on a straight line.
The discharge voltage of the two pairs of hearths 4A and 4B and the hearths 5A and 5B is set for each pair by the control device (not shown), that is, the hearths 5A and 5B are discharged after the hearths 4A and 4B are discharged. Each pair is switched in time series.

In the film forming apparatus 1, film formation is performed on the substrate W by switching the hearths 4A and 4B and the hearths 5A and 5B in time series.
For example, when the first film formation is performed, the high-density plasma HP is irradiated into the vacuum vessel 2 from each of the plasma guns 6 and 7 by adjusting the steering coils 9 of the plasma guns 6 and 7.

  The high-density plasma HP emitted from the plasma gun 6 is reliably guided to the hearth 4A by controlling the discharge voltage of the hearth 4A to an appropriate value by a control device (not shown), and film formation in the hearth 4A is performed. The material is heated and evaporated. The evaporated film forming material is ionized in the high-density plasma HP and reacts with an atmospheric gas such as nitrogen gas, and the reaction product adheres to the surface of the substrate W to form a film.

  Similarly, the high-density plasma HP emitted from the plasma gun 7 is also reliably guided to the hearth 4B by controlling the discharge voltage of the hearth 4B to an appropriate value by a control device (not shown). The film forming material is heated and evaporated. The evaporated film forming material is ionized in the high-density plasma HP and reacts with an atmospheric gas such as nitrogen gas, and the reaction product adheres to the surface of the substrate W to form a film.

  For example, when the length (L) in the width direction of the substrate W is 400 mm, the distance (D) between the two hearths 4A and 4B is 500 mm, and the distance (H) between the substrate W and the hearths 4A and 4B is 500 mm, The position (xmm) where the difference (θ1−θ2) between the incident angle (θ1) from Hearth 4A and the incident angle (θ2) from Hearth 4B is 0 is a position shifted by 125 mm to the left from the center.

After the film formation by the hearts 4A and 4B is completed, the discharge is switched from the hearts 4A and 4B to the hearts 5A and 5B as shown in FIG.
The high-density plasma HP emitted from the plasma gun 6 is reliably guided to the hearth 5A by controlling the discharge voltage of the hearth 5A to an appropriate value, and heats and evaporates the film forming material in the hearth 5A. The evaporated film forming material is ionized in the high-density plasma HP and reacts with an atmospheric gas such as nitrogen gas, and the reaction product adheres to the surface of the substrate W to form a film.

Similarly, the high-density plasma HP emitted from the plasma gun 7 is also reliably guided to the hearth 5B by controlling the discharge voltage of the hearth 5B to an appropriate value, and heats the film forming material in the hearth 5B. Evaporate. The evaporated film forming material is ionized in the high-density plasma HP and reacts with an atmospheric gas such as nitrogen gas, and the reaction product adheres to the surface of the substrate W to form a film.
In this case, the position (xmm) at which the difference (θ1−θ2) between the incident angle (θ1) from the hearth 4A and the incident angle (θ2) from the hearth 4B is 0 is opposite to the first film formation. The position is shifted to the right by 125 mm.

Thus, the position where the difference between the incident angles of the hearts 4A and 4B becomes “0” is a position shifted by x from the center C of the substrate W to the left in the figure (position of −x), while the hearth 5A The position at which the difference between the incident angles of 5B becomes “0” is a position shifted from the center C of the substrate W by x in the right direction in the drawing (+ x position).
Therefore, by switching the discharge voltage of each of the hearths 4A and 4B and the hearths 5A and 5B in time series for each pair, the position where the difference in incident angle is “0” with respect to the center of the substrate W This changes by | x | in the direction, and the coverage of the film formation in the substrate W due to the difference in incident angle can be improved.

  Further, even when there is a foreign substance on the substrate W, the film forming material is introduced to the back side of the foreign substance by switching the discharge voltage of each of the hearth 4A, 4B and the hearth 5A, 5B in time series for each pair. Can be made. Therefore, in the obtained thin film, there is no possibility that a defective portion due to the foreign matter is generated, and the in-plane uniformity of the thin film can be improved.

Next, a method for manufacturing an organic EL device using the film forming apparatus 1 will be described.
Here, first, a top emission type organic EL device obtained by using the film forming apparatus 1 will be described with reference to FIG.
In the organic EL device 11, the element substrate 21 and the transparent protective substrate 31 are arranged to face each other, and the element substrate 21 and the transparent protective substrate 31 are bonded and integrated through an adhesive layer 41.
A plurality of organic EL elements 22 are formed on the element substrate 21. These organic EL elements 22 have a configuration in which an organic light emitting layer 25 that generates monochromatic light, for example, white light, is sandwiched between a first electrode 23 as an anode and a second electrode 24 as a cathode. In addition, a sealing layer 51 is formed on the element substrate 21 so as to cover the plurality of organic EL elements 22.

  These organic EL elements 22 are regularly arranged in a matrix on the element substrate 21 to form a display region L. In addition, the organic EL element 22 uses three types of organic materials of R (red), G (green), and B (blue) separately, for example, an organic EL element that generates red light, and green light. An organic EL element that generates blue light or an organic EL element that generates blue light may be used. A region outside the display region L is referred to as a non-display region M.

The element substrate 21 includes an element substrate main body 26 and an inorganic insulating layer 27 that covers the surface of the element substrate main body 26 on the transparent protective substrate 31 side. The element substrate body 26 is formed of an insulating material such as a glass substrate or a plastic substrate. The inorganic insulating layer 27 is formed of a silicon compound such as silicon oxide (SiO ₂ ) or silicon nitride (SiN). On the element substrate body 26, a switching element 28 composed of a plurality of thin film transistors (TFTs) corresponding to the plurality of organic EL elements 22 on a one-to-one basis, various wirings (not shown), and the like are formed.

  On the inorganic insulating layer 27, a resin flattening layer 62 in which a metal reflective layer 61 made of an Al (aluminum) alloy or the like is provided is formed. The resin flattening layer 62 is formed of an insulating resin material such as a photosensitive acrylic resin or cyclic olefin resin.

  A first electrode 23 of the organic EL element 22 is formed in a region that overlaps the metal reflective layer 61 on the resin flattening layer 62 in a planar manner. The first electrode 23 is made of a metal oxide such as ITO (Indium Tin Oxide) having a high hole injection property. The first electrode 23 is connected to the switching element 28 on the element substrate body 26 through a contact hole (not shown) penetrating the resin flattening layer 62 and the inorganic insulating layer 27.

An insulating partition layer 63 made of, for example, an acrylic resin is formed on the resin flattening layer 62 in order to partition the organic EL element 22. The partition layer 63 has a plurality of openings that expose the top of the first electrode 23.
An organic light emitting layer 25 is formed so as to cover the upper surface of the partition layer 63 and the first electrode 23 along the uneven shape formed by the opening and the partition layer 63.

  The organic light emitting layer 25 includes a light emitting layer that emits light by being excited by recombination of holes and electrons injected by an electric field. The organic light emitting layer 25 is a multilayer including layers other than the light emitting layer. A structure is also possible. As a layer other than the light emitting layer, a hole injection layer for facilitating injection of holes, a hole transport layer for facilitating transport of injected holes to the light emitting layer, and for facilitating injection of electrons. Examples include an electron injection layer and a layer that contributes to the recombination, such as an electron transport layer for easily transporting injected electrons to the light emitting layer.

Examples of the light emitting layer of the organic light emitting layer 25 include a low molecular weight organic EL material or a high molecular weight organic EL material.
The low molecular weight organic EL material has a relatively low molecular weight among organic compounds that emit light by being excited by recombination of holes and electrons. The high molecular weight organic EL material has a relatively high molecular weight among organic compounds that emit light when excited by recombination of holes and electrons.
These low molecular weight organic EL materials or high molecular weight organic EL materials are substances corresponding to light of a single color emitted from the organic EL element 22 (white light). The material of the layer contributing to recombination in the light emitting layer is a substance corresponding to the material of the layer in contact with this layer.

On this organic light emitting layer 25, the 2nd electrode 24 is formed so that this organic light emitting layer 25 may be covered along the uneven | corrugated shape. The second electrode 24 includes, for example, an electron injection buffer layer for facilitating injection of electrons into the organic light emitting layer 25, and a conductive layer having a low electrical resistance formed on the electron injection buffer layer.
The electron injection buffer layer is made of, for example, LiF (lithium fluoride), Ca (calcium), or MgAg (magnesium-silver alloy). In addition, the conductive layer is a conductive layer with a small electrical resistance formed of a metal such as ITO or Al.

A sealing layer 51 is formed on the element substrate 21 to cover the inorganic insulating layer 27, the resin flattening layer 62, and the second electrode 24 of the organic EL element 22, and the sealing layer 51 is an electrode protective layer. 52, an organic buffer layer 53, and a gas barrier layer 54.
The electrode protective layer 52 is made of, for example, a silicon compound such as silicon oxynitride (SiON).
The organic buffer layer 53 is formed so as to fill the irregular shape formed by the partition wall layer 63 and its opening, and the element substrate 21 is planarized. As a material constituting the organic buffer layer 53, for example, an epoxy compound or the like can be used.
The gas barrier layer 54 is formed so as to cover the organic buffer layer 53 and further to the terminal portion of the electrode protective layer 52. The gas barrier layer 54 is made of, for example, SiON in consideration of translucency, gas barrier properties, and water resistance.

On the surface of the element substrate 21 on which the gas barrier layer 54 is formed, the transparent protective substrate 31 is arranged to face the surface. The transparent protective substrate 31 is bonded to the gas barrier layer 54 on the element substrate 21 through the adhesive layer 41.
The transparent protective substrate 31 includes a transparent substrate body 32 made of a material having optical transparency such as a transparent glass substrate or a transparent plastic substrate.

  A red colored layer 33R, a green colored layer 33G, and a blue colored layer 33B are regularly arranged in a matrix form as a color filter layer 33 on the surface of the transparent substrate body 32 facing the element substrate 21 to form a display region L. is doing. In addition, a black matrix layer (light-shielding layer) 34 is formed in a region surrounding each colored layer 33R, 33G, 33B, more specifically in a region corresponding to the partition layer 63. As a material constituting the black matrix layer 34, for example, Cr (chromium) or the like can be used.

  Each of the colored layers 33R, 33G, and 33B is disposed so as to overlap the white organic light emitting layer 25 formed on the first electrode 23 in a planar manner. Thereby, the light emitted from the organic light emitting layer 25 passes through each of the colored layers 33R, 33G, and 33B, and is emitted to the viewer side as each color light of red light, green light, and blue light. Yes.

In addition, an overcoat layer (covering layer) 35 is formed on the transparent substrate main body 32 so as to cover the color filter layer 33 and the black matrix layer 34 formed in the display region L.
The overcoat layer 35 extends from the inside of the display area L to the vicinity of a formation area of a second adhesive layer 43 described later around the non-display area M. The overcoat layer 35 is formed of, for example, a resin material such as acrylic or polyimide.
A gas barrier layer 36 made of a silicon compound such as silicon oxynitride (SiON) is formed on the overcoat layer 35 so as to cover the overcoat layer 35.

The adhesive layer 41 includes a first adhesive layer 42 and a second adhesive layer 43 that seals the periphery.
The first adhesive layer 42 is provided between the element substrate 21 and the transparent protective substrate 31 and covers at least a portion corresponding to the display region L of the gas barrier layer 54. As a material of the first adhesive layer 42, For example, a low elastic resin obtained by adding an isocyanate as a curing agent to a urethane resin or an acrylic resin can be used.

  The second adhesive layer 43 is provided in the non-display area M so as to surround the first adhesive layer 42 between the element substrate 21 and the transparent protective substrate 31. Can use a highly adhesive adhesive in which an acid anhydride is added as a curing agent to a material having a low moisture permeability, for example, an epoxy resin, and a silane coupling agent is added as an accelerator.

  By forming the first adhesive layer 42 and the second adhesive layer 43 using the above-described materials, the first adhesive layer 42 can have a lower elastic modulus than the second adhesive layer 43. In addition, the second adhesive layer 43 can obtain higher adhesive strength than the first adhesive layer 42, and the moisture permeability can be lower than that of the first adhesive layer 42.

Next, a method for manufacturing the organic EL device 11 will be described.
The manufacturing process of the organic EL device 11 includes a process on the element substrate 21 side, a process on the transparent protective substrate 31 side, and a process of bonding and integrating the element substrate 21 and the transparent protective substrate 31 with the adhesive layer 41. Composed.

First, the switching element 28 and various wirings (not shown) are formed on the element substrate body 26, and the inorganic insulating layer 27 is formed on the inorganic insulating layer 27 so as to cover them by a dry film formation method such as a thermal oxidation method, a CVD method, a sputtering method, or the like. It is formed using a wet film formation method such as a coating method.
Next, a light reflective metal reflective layer 61 such as an Al alloy is formed on the inorganic insulating layer 27, and the resin flattening layer 62 is formed by a wet film formation method such as a screen printing method or a spin coat method so as to cover it. Form.

Next, a transparent conductive material such as ITO is formed by a sputtering method or the like in a region overlapping the metal reflective layer 61 on the resin flattening layer 62 in a planar manner, thereby forming the first electrode 23 that becomes a plurality of pixels.
Next, an insulating material is formed over the entire region including the first electrode 23, and this film is formed on the inorganic insulating layer 27 and surrounds the first electrode 23 by a known resist technique, photolithography technique, etching technique, or the like. To form a partition wall layer 63. Next, a cleaning process such as plasma cleaning is performed to remove organic foreign matters from the element substrate 21 and improve the wettability of the ITO surface.

  Next, along the opening surrounded by the partition wall layer 63 and the concavo-convex shape of the partition wall layer 63, for example, vapor deposition or wet processing such as spin coating or slit coating method so as to cover the upper surface of the partition layer 63 and the first electrode 23. The organic light emitting layer 25 is formed by a film forming method. When the organic light emitting layer 25 is composed of a plurality of layers, the layers are sequentially formed.

  Next, the second electrode 24 of the organic EL element 22 is formed so as to cover the organic light emitting layer 25 along the uneven shape. For example, a metal or alloy having high electron injection properties such as LiF and Ca and Mg is formed by vacuum deposition, and then patterned to avoid the pixel portion by vacuum deposition in order to reduce the electrode resistance of the film. An Al thin film is formed, or a transparent ITO film is formed by a high density plasma film forming method such as an ECR (Electron Cyclotron Resonance) plasma sputtering method, an ion plating method, or a counter target sputtering method.

Next, an electrode protective layer 52 is formed on the element substrate 21 so as to cover the inorganic insulating layer 27, the resin flattening layer 62, and the second electrode 24 of the organic EL element 22.
The electrode protective layer 52 fills the hearth 4A, 4B and the hearth 5A, 5B of the film forming apparatus 1 with a silicon oxide (SiO) as a film forming material, so that the hearth 4A, 4B and the hearth 5A, 5B By switching in series, the silicon oxide (SiO) evaporated from the hearth 4A, 4B or the hearth 5A, 5B reacts with nitrogen (N ₂ ), which is the atmospheric gas, and the generated silicon oxynitride (SiON) is inorganically insulated. The layer 27, the resin flattening layer 62, and the second electrode 24 of the organic EL element 22 can be deposited so as to cover.

  In this case, by switching the hearth 4A, 4B and the hearth 5A, 5B in time series, the difference between the incident angle from the hearth 4A, 4B and the incident angle from the hearth 5A, 5B can be reduced. The coverage in the electrode protective layer 52 can be improved.

  Next, an organic buffer layer 53 is formed on the electrode protective layer 52. The organic buffer layer 53 is formed by screen-printing an organic material such as an epoxy compound in a reduced-pressure atmosphere, and then heat-curing.

Next, a gas barrier layer 54 is formed on the organic buffer layer 53.
In the gas barrier layer 54, the hearth 4A, 4B and the hearth 5A, 5B of the film forming apparatus 1 are filled with silicon oxide (SiO) as a film forming material, and the hearth 4A, 4B and the hearth 5A, 5B are time-series. Switching, the silicon oxide (SiO) evaporated from the hearth 4A, 4B or the hearth 5A, 5B reacts with nitrogen (N ₂ ), which is an atmospheric gas, and the generated silicon oxynitride (SiON) is an organic buffer layer. It can be formed by depositing so as to cover 53.

In this case, by switching the hearth 4A, 4B and the hearth 5A, 5B in time series, the difference between the incident angle from the hearth 4A, 4B and the incident angle from the hearth 5A, 5B can be reduced. The coverage in the gas barrier layer 54 can be improved.
As described above, the element substrate 21 that includes the plurality of organic EL elements 22 and is covered with the sealing layer 51 including the electrode protective layer 52, the organic buffer layer 53, and the gas barrier layer 54 is manufactured.

  On the other hand, Cr (chromium) is formed in a region corresponding to the partition layer 63 on the transparent substrate main body 32 by, for example, vapor deposition or sputtering, and this film is used by a known resist technique, photolithography technique, etching technique, or the like. The black matrix layer 34 is formed by patterning.

  Next, the color filter layer 33 is formed by using the black matrix layer 34 as a partition wall, for example, by a droplet discharge method such as inkjet. Specifically, for example, liquid materials such as a red coloring layer 33R, a green coloring layer 33G, and a blue coloring layer 33B are selectively injected between a predetermined black matrix layer 34 from a droplet discharge head, The red colored layer 33R, the green colored layer 33G, and the blue colored layer 33B are formed by heating and drying at a temperature. In this way, the color filter layer 33 including the red colored layer 33R, the green colored layer 33G, and the blue colored layer 33B can be formed.

  Next, an overcoat layer 35 is formed so as to cover the color filter layer 33 and the black matrix layer 34 and extend from the inside to the outside of the display region L. The overcoat layer 35 is obtained by diluting a resin material such as acrylic or polyimide with a raw material component or an organic solvent, applying a pattern using a slit coating method, a screen printing method, or the like, and evaporating and curing in a thermal oven or the like. To form.

Next, a gas barrier layer 36 is formed so as to cover the overcoat layer 35.
The gas barrier layer 36 fills the hearths 4A and 4B and the hearths 5A and 5B of the film forming apparatus 1 with silicon oxide (SiO) as a film forming material, and the hearths 4A and 4B and the hearths 5A and 5B are time-sequentially. Switching, the silicon oxide (SiO) evaporated from the hearth 4A, 4B or the hearth 5A, 5B reacts with nitrogen (N ₂ ), which is the atmospheric gas, and the generated silicon oxynitride (SiON) is overcoated. It can be formed by depositing so as to cover 35.

In this case, by switching the hearth 4A, 4B and the hearth 5A, 5B in time series, the difference between the incident angle from the hearth 4A, 4B and the incident angle from the hearth 5A, 5B can be reduced. The coverage in the gas barrier layer 36 can be improved.
As described above, the color filter layer 33 and the black matrix layer 34 are formed on the transparent substrate main body 32, and the transparent protective substrate 31 including the overcoat layer 35 and the gas barrier layer 36 covering them is manufactured.

Next, the second adhesive layer 43 is formed in the frame portion on the transparent protective substrate 31, more specifically, in the region where the overcoat layer 35 and the gas barrier layer 36 are not formed in the non-display region M on the transparent protective substrate 31. Apply material. Specifically, for example, the above-described adhesive is applied by a dispense drawing method or a screen printing method.
Next, a material for forming the first adhesive layer 42 is applied so as to cover the overcoat layer 35 and the gas barrier layer 36 formed on the transparent protective substrate 31. Specifically, the above-described adhesive is applied by, for example, a dispense dropping method.

Next, the transparent protective substrate 31 coated with the material for forming the first adhesive layer 42 and the second adhesive layer 43 is irradiated with ultraviolet rays. Specifically, the transparent protective substrate 31 is irradiated with, for example, ultraviolet rays having an illuminance of 30 mW / cm ² and a light amount of 2000 mJ / cm ² for the purpose of initiating a curing reaction of the forming materials of the first adhesive layer 42 and the second adhesive layer 43. . Thereby, the formation material of the 1st contact bonding layer 42 and the 2nd contact bonding layer 43 reacts, and a viscosity rises gradually.

Next, the surface of the element substrate 21 on which the sealing layer 51 is formed is opposed to the surface of the transparent protective substrate 31 on which the forming material of the first adhesive layer 42 and the second adhesive layer 43 is formed, The element substrate 21 and the transparent protective substrate 31 are bonded to each other through the material for forming the first adhesive layer 42 and the second adhesive layer 43.
At this time, while finely adjusting the alignment position between the bonded element substrate 21 and the transparent protective substrate 31, the element substrate 21 and the transparent protective substrate 31 are brought closer to each other. Specifically, the relative position between the organic EL element 22 and the color filter layer 33 is adjusted by relatively moving the element substrate 21 and the transparent protective substrate 31 in the plane direction (parallel direction). Thus, final alignment is performed while improving alignment position accuracy.

Next, the element substrate 21 and the transparent protective substrate 31 are pressure-bonded. Specifically, for example, in a vacuum atmosphere with a degree of vacuum of 1 Pa, the pressure is held at 600 N for 200 seconds for pressure bonding.
Next, the pressure-bonded element substrate 21 and transparent protective substrate 31 are heated in an air atmosphere. Specifically, the first adhesive layer 42 and the second adhesive layer whose viscosity has been increased by heating the element substrate 21 and the transparent protective substrate 31 in the atmosphere at a predetermined temperature for a predetermined time. The forming material of the adhesive layer 43 is cured to form the first adhesive layer 42 and the second adhesive layer 43.
As described above, the organic EL device 11 described above can be manufactured.

As described above, according to the organic EL device 11 of the present embodiment, the electrode protective layer 52, the gas barrier layer 54, and the gas barrier layer 36 are switched in time series between the hearth 4A and 4B and the hearth 5A and 5B. Since the film is formed, a uniform film without unevenness can be formed, and the coverage of the film can be improved.
Further, even if there is a foreign substance when forming the electrode protective layer 52, the gas barrier layer 54, and the gas barrier layer 36, the film forming material wraps around the back side of the foreign substance, so that the electrode protective layer 52, the gas barrier layer 54, and It is possible to prevent a defective portion due to the foreign matter from being generated in the gas barrier layer 36. Therefore, it is possible to prevent oxygen and moisture from entering the electrode protective layer 52, the gas barrier layer 54, and the gas barrier layer 36, which are dense and excellent in uniformity, from the outside, and the reliability of the thin film can be ensured.

“Second Embodiment”
FIG. 5 is a plan view showing a main part of a film forming apparatus according to the second embodiment of the present invention, which is an example of a film forming apparatus called an ion plating apparatus.
The film forming apparatus 71 is different from the film forming apparatus 1 of the first embodiment in that the film forming apparatus 1 of the first embodiment has two pairs of hearts 4A, 4B, 5A, and 5B in the vacuum vessel 2. Whereas the bottom portion is sequentially arranged on a straight line so that the spacing between adjacent hearts is equal in the direction facing the film formation surface of the substrate W and perpendicular to the transport direction, In the film forming apparatus 71 of the embodiment, four pairs of hearths (having the same configuration as the hearths 4A, 4B, 5A, and 5B) are provided at the positions facing the film forming surface of the substrate W at the bottom in the vacuum vessel 2. Evaporation source) 72A, 72B, 73A, 73B, 74A, 74B, 75A, 75B, Hearth 72A, 73A, 74A, 75A on one side and Hearth 72B, 73B, 74B, 75b on the other side are adjacent to Hearth Sequentially arranged on the circumference so that the distance between them is equal. The point is different.

In the film forming apparatus 71, as in the film forming apparatus 1 of the first embodiment, the hearths 72A and 72B, the hearths 73A and 73B, the hearths 74A and 74B, and the hearths 75A and 75B are arranged in time series. By switching, film formation can be performed on the substrate W.
For example, when the first film formation is performed, the high-density plasma HP emitted from the plasma gun 6 is reliably controlled by controlling the discharge voltage of the hearth 72A to an appropriate value by a control device (not shown). The film forming material in the hearth 72A is heated and evaporated by being guided to 72A. The evaporated film forming material is ionized in the high-density plasma HP and reacts with an atmospheric gas such as nitrogen gas, and the reaction product adheres to the surface of the substrate W to form a film.

  Similarly, the high-density plasma HP emitted from the plasma gun 7 is also reliably guided to the hearth 72B by controlling the discharge voltage of the hearth 72B to an appropriate value by a control device (not shown). The film forming material is heated and evaporated. The evaporated film forming material is ionized in the high-density plasma HP and reacts with an atmospheric gas such as nitrogen gas, and the reaction product adheres to the surface of the substrate W to form a film.

  In the film forming apparatus 71, similarly to the film forming apparatus 1 of the first embodiment, the discharge voltages of the hearths 72A and 72B, the hearths 73A and 73B, the hearths 74A and 74B, and the hearths 75A and 75B are hourly for each pair. By sequentially switching in sequence, the position where the difference in incident angle becomes “0” moves on the circumference with the center point of the substrate W as an axis, and the substrate W caused by the difference in incident angle. The coverage of the film formation can be improved.

  Further, even when there is a foreign object on the substrate W, by switching the discharge voltages of the hearth 72A, 72B, the hearth 73A, 73B, the hearth 74A, 74B, the hearth 75A, 75B in time series for each pair, The film forming material can be wrapped around the back side of the foreign matter. Therefore, in the obtained thin film, there is no possibility that a defective portion due to the foreign matter is generated, and the in-plane uniformity of the thin film can be improved.

“Third Embodiment”
FIG. 6 is a schematic view showing a main part of a film forming apparatus according to the third embodiment of the present invention, which is an example of a film forming apparatus called an ion plating apparatus.
The film forming apparatus 81 is different from the film forming apparatus 1 of the first embodiment in that the film forming apparatus 1 of the first embodiment is provided with one substrate transfer mechanism 3 above the vacuum vessel 2 and two pairs. Hearts 4A, 4B, 5A, and 5B are placed at the bottom of the vacuum vessel 2 so as to face the film-forming surface of the substrate W and perpendicular to the transport direction, that is, the direction in which the substrate transport mechanism 3 advances. In the film forming apparatus 81 according to the present embodiment, two substrates are transported above the vacuum vessel 2 while being arranged in a straight line so that the intervals between adjacent hearts are equal in the orthogonal direction. The mechanisms 3A and 3B are provided in parallel to each other, and the pair of hearths 4A and 4B are the bottoms in the vacuum vessel 2, and are orthogonal to the transport direction of the two substrate transport mechanisms 3A and 3B and these substrate transport mechanisms 3A Points arranged on both sides of the surface S that is symmetrical with respect to 3B Different.

In this film forming apparatus 81, film formation can be performed on the substrate W by switching the two substrate transport mechanisms 3A and 3B in time series.
For example, when the first film formation is performed on the substrate W transported by the substrate transport mechanism 3A, the high-density plasma HP emitted from the plasma gun 6 is discharged from the hearth 4A by a control device (not shown). Is controlled to an appropriate value so that the film is surely guided to the hearth 4A, and the film forming material in the hearth 4A is heated and evaporated.
Similarly, the high-density plasma HP emitted from the plasma gun 7 is also reliably guided to the hearth 4B by controlling the discharge voltage of the hearth 4B to an appropriate value by a control device (not shown). The film forming material is heated and evaporated.

The evaporated film forming material is ionized in the high-density plasma HP and reacts with an atmospheric gas such as nitrogen gas, and the reaction product adheres to the surface of the substrate W to form a film.
For example, when the length (L) in the width direction of the substrate W is 400 mm, the distance (D) between the two hearths 4A and 4B is 500 mm, and the distance (H) between the substrate W and the hearths 4A and 4B is 500 mm, The position (xmm) where the difference (θ1−θ2) between the incident angle (θ1) from the hearth 4A and the incident angle (θ2) from the hearth 4B is 0 is shifted from the center of the substrate W by about 125 mm to the left. The upper position.

Next, the substrate W is switched to the substrate transport mechanism 3B and transported again, and the second film formation is performed on the substrate W transported by the substrate transport mechanism 3B.
In this case, as shown in FIG. 7, the position (xmm) where the difference (θ1−θ2) between the incident angle (θ1) from the hearth 4A and the incident angle (θ2) from the hearth 4B is 0 is the first time Contrary to the film formation, the position on the substrate W is shifted from the center of the substrate W to the right by about 125 mm.

  As described above, the substrate transport mechanisms 3A and 3B are switched in time series, and the relative position of the transported substrate W with respect to the hearths 4A and 4B is switched in time series, whereby the difference in incident angle becomes “0”. Changes by x in the horizontal direction in the figure with respect to the center of the substrate W, and the coverage of the film formation in the substrate W due to the difference in incident angle can be improved.

  Further, even when there is a foreign object on the substrate W, the substrate transport mechanisms 3A and 3B are switched in time series, and the relative positions of the substrates W transported by the substrate transport mechanisms 3A and 3B with respect to the hearts 4A and 4B are time-series. Thus, the film forming material can be made to wrap around the foreign substance. Therefore, in the obtained thin film, there is no possibility that a defective portion due to the foreign matter is generated, and the in-plane uniformity of the thin film can be improved.

(Electronics)
Next, an electronic apparatus according to the present invention will be described using a mobile phone as an example. FIG. 8 is a perspective view showing the overall configuration of the mobile phone 600. The mobile phone 600 includes a housing 601, an operation unit 602 provided with a plurality of operation buttons, and a display unit 603 that displays images, moving images, characters, and the like. On the display unit 603, the organic EL device 11 according to the present invention is mounted.
As described above, since the organic EL device 11 with improved film deposition coverage is provided, a highly reliable and high-performance electronic device (mobile phone) 600 can be obtained.

  In addition to the mobile phone 600, the electronic device includes a multimedia-compatible personal computer (PC), an engineering workstation (EWS), a pager, a projection type liquid crystal display device, a word processor, a television, and a viewfinder type. Or a monitor direct-view type video tape recorder, an electronic notebook, an electronic desk calculator, a car navigation device, a POS terminal, a touch panel, and the like.

It is sectional drawing which shows the film-forming apparatus of the 1st Embodiment of this invention. It is a schematic diagram which shows the arrangement | sequence and operation | movement of a hearth of the film-forming apparatus of the 1st Embodiment of this invention. It is a schematic diagram which shows the arrangement | sequence and operation | movement of a hearth of the film-forming apparatus of the 1st Embodiment of this invention. 1 is a cross-sectional view illustrating an organic EL device according to a first embodiment of the present invention. It is a top view which shows the arrangement | sequence and operation | movement of a hearth of the film-forming apparatus of the 2nd Embodiment of this invention. It is a schematic diagram which shows the arrangement | positioning and operation | movement of a substrate conveyance mechanism and a hearth of the film-forming apparatus of the 3rd Embodiment of this invention. It is a schematic diagram which shows the arrangement | positioning and operation | movement of a substrate conveyance mechanism and a hearth of the film-forming apparatus of the 3rd Embodiment of this invention. It is a perspective view which shows the mobile telephone which is an example of an electronic device. It is sectional drawing which shows an example of the conventional ion plating apparatus. It is a schematic diagram which shows the problem of the conventional ion plating apparatus.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Film-forming apparatus, 2 ... Vacuum container, 3 ... Substrate conveyance mechanism, 4A, 4B, 5A, 5B ... Hearth, 6, 7 ... Plasma gun, 8 ... Hearth coil, 9 ... Steering coil, 10 ... Piping, 11 ... Organic EL device, 21 ... element substrate, 22 ... organic EL element, 31 ... transparent protective substrate, 41 ... adhesive layer, 36, 54 ... gas barrier layer, 52 ... electrode protective layer, L ... display region, M ... non-display region, 600 ... cell phones (electronic devices)

Claims (5)

A vacuum container that accommodates the substrate, a plurality of pairs of vapor deposition sources disposed in the vacuum container and facing the substrate, and a plurality of plasma guns that irradiate these vapor deposition sources with a plasma beam,
By switching the discharge voltage of each of the plurality of pairs of vapor deposition sources in time series for each pair, particles are evaporated from these vapor deposition sources in time series to form a film on the substrate. Deposition device. Of the plurality of pairs of vapor deposition sources, one of the vapor deposition sources of each pair and the other vapor deposition source are sequentially disposed in a direction along one side of the substrate,
2. The film forming apparatus according to claim 1, wherein discharge voltages of the plurality of pairs of vapor deposition sources are switched in time series for each pair. The vacuum vessel is provided with a transport mechanism for transporting the substrate,
Among the plurality of pairs of vapor deposition sources, one vapor deposition source and the other vapor deposition source of each pair of vapor deposition sources are sequentially arranged in a direction orthogonal to the substrate transport direction. The film forming apparatus according to claim 2. The vapor deposition source on one side of the vapor deposition source of each pair of the plurality of vapor deposition sources, and the vapor deposition source on the other side are sequentially arranged in a circular shape,
2. The film forming apparatus according to claim 1, wherein discharge voltages of the plurality of pairs of vapor deposition sources are switched in time series for each pair. A vacuum container for storing a substrate, a plurality of transport mechanisms for transporting the substrate into the vacuum container, a pair of vapor deposition sources disposed in the vacuum container and facing the substrate, and each of these vapor deposition sources With a plasma gun that irradiates the plasma beam,
The pair of vapor deposition sources are respectively provided on both sides of a plane that is orthogonal to the transport direction of the plurality of transport mechanisms and the plane of symmetry of these transport mechanisms.
A film forming apparatus, wherein the plurality of transport mechanisms are switched in time series to switch the transport path of the substrate to evaporate particles from the pair of vapor deposition sources to form a film on the substrate.

Images