JP2010118459A - Ion implantation apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To suppress the occurrence of particles due to contact of a semiconductor wafer and a chuck pin. <P>SOLUTION: The chuck mechanism of the ion implantation apparatus includes: a spindle 42 erected axisymmetrically to a line (symmetry axis 40) connecting the center of a rotating body and the center of the semiconductor wafer on a surface on the opposite side of the surface of a support board where the semiconductor wafer 28 is to be mounted; a link member 44 which is provided turnably around the spindle and includes one end part projecting to the outer side from the peripheral edge part on the inner peripheral side of the semiconductor wafer; the chuck pin 46 erected in the direction of the semiconductor wafer from one end part of the link member; and a chuck spring 48 for turning the link member clockwise. For the link member, a counter weight 52 for making a centrifugal force accompanying the rotation of the rotating body act in the direction of obstructing turning by the chuck spring is attachable and detachable, and the centrifugal force is adjusted by making the weight of the counter weight different. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an ion implantation apparatus, and more particularly to an ion implantation apparatus that implants ions into a semiconductor wafer such as silicon.

  In recent years, SOI (Silicon on Insulator) wafers have been used to achieve high speed and low power consumption of integrated circuits such as LSI (Large Scale Integration). The SOI wafer is configured by embedding an insulating layer made of an oxide film between a silicon support and a surface silicon layer.

  As one method for manufacturing such an SOI wafer, SIMOX (Separation by IMplanted OXygen) for forming an insulating layer made of an oxide film, that is, a BOX (Buried Oxide) layer, is performed by implanting, for example, oxygen ions into a silicon wafer. A method called the law is used.

  As described in Patent Document 1, in the manufacture of a SIMOX wafer, a silicon wafer is placed on each of a plurality of support plates provided on a turntable, and the turntable is rotated while turning the silicon wafer. It is known to batch process by implanting oxygen ions.

  More specifically, the ion implantation apparatus for a SIMOX wafer swivels with a rotating body, a plurality of arms extending radially around the rotation axis of the rotating body, and a support plate provided at the tip of each arm. It comprises an implantation means for implanting ions into a silicon wafer.

  At the time of ion implantation, since the plurality of support plates are turned with the surface of the plate being oriented in a direction substantially orthogonal to the rotation axis, centrifugal force acts on the silicon wafer placed on the support plate. In order to prevent the silicon wafer from jumping out by this centrifugal force, each support plate is provided with a stopper so as to come into contact with the peripheral portion on the side far from the rotation axis of the rotating body of the mounted silicon wafer. .

  In addition, each support plate is tilted so that the plate surface is directed toward the rotation axis, and is configured to receive the component force of centrifugal force on the plate surface, or adopts a method of chucking and fixing several places on the wafer Yes. Furthermore, in the method of chucking and fixing several locations of the wafer, as a mechanism for holding the silicon wafer on the support plate, a chuck pin is brought into contact with the peripheral portion on the side closer to the rotation axis of the rotating body of the silicon wafer. Is pressed against the stopper.

JP 2007-59262 A

  By the way, the apparatus described in Patent Document 1 does not consider adverse effects caused by wear particles (particles) caused by contact between the silicon wafer and the holding mechanism, particularly contact between the silicon wafer and the chuck pin.

  In other words, it is desirable to strongly press the chuck pin against the wafer from the viewpoint of firmly holding the silicon wafer during ion implantation. However, as the contact force between the chuck pin and the wafer increases, the contact friction increases and the silicon wafer is damaged. At the same time, particles may be generated. On the other hand, if the pressing force by the chuck pins becomes too weak, the silicon wafer may vibrate and rub against the chuck pins, thereby generating a large amount of particles.

  When the particles are generated, for example, the particles may adhere to the ion implantation surface of the silicon wafer and the uniform ion implantation to the silicon wafer may be hindered.

  Therefore, an object of the present invention is to suppress generation of particles due to contact between a semiconductor wafer and chuck pins.

  An ion implantation apparatus according to the present invention includes a rotating body rotated by a rotation driving mechanism, a plurality of arms extending radially around a rotation axis of the rotating body, and a semiconductor wafer support plate provided on each arm. A stopper provided so as to abut on the peripheral edge of the semiconductor wafer placed on each support plate on the side far from the rotation axis, a chuck mechanism for pressing the semiconductor wafer against the stopper, and fixing to each support plate And an ion implantation means for implanting ions into the semiconductor wafer rotated by a rotation driving mechanism in a fixed state.

  The chuck mechanism includes a pair of support shafts provided on the surface opposite to the surface on which the semiconductor wafer is placed on each support plate and erected symmetrically about a line connecting the center of the rotating body and the center of the semiconductor wafer. A link member which is rotatable about the support shaft and has one end projecting outward from the peripheral edge on the side close to the rotation axis of the rotating body of the semiconductor wafer, and the direction of the semiconductor wafer from the one end of the link member And a chuck spring for applying a force for rotating the link member in a direction in which the chuck pin comes into contact with the peripheral edge of the semiconductor wafer rotating body close to the rotating shaft. The

  In particular, in order to solve the above-described problem, the link member is detachable with a counterweight that exerts a centrifugal force associated with the rotation of the rotating body in a direction that prevents the rotation of the link member by the chuck spring. The centrifugal force acting in the direction that prevents the link member from rotating by changing the weight is adjustable. In particular, it is preferable to adjust the centrifugal force acting in a direction that prevents the rotation of the link member by changing the weight of the counterweight so that the generation amount of particles on the semiconductor wafer is minimized.

  According to this, the contact force of the chuck pins with respect to the semiconductor wafer can be adjusted by varying the weight of the counter weight so that the semiconductor wafer is securely fixed during ion implantation and the generation of particles is most suppressed. Therefore, according to the present invention, generation of particles due to contact between the semiconductor wafer and the chuck pins can be suppressed.

  The adjustment of the counter weight can be performed, for example, by making a plurality of types of counter weights having different weights detachable. In addition, the most appropriate contact force from the two viewpoints of reliable fixing of the semiconductor wafer and particle suppression may vary depending on, for example, the type of semiconductor wafer used. According to the present invention, the semiconductor wafer Since the contact force of the chuck pin with respect to the semiconductor wafer can be adjusted according to the kind of the semiconductor wafer, generation of particles due to contact between the semiconductor wafer and the chuck pin can be suppressed.

  In the present invention, the chuck pin is formed in a columnar shape, and a constricted portion is formed by sequentially reducing the diameter along the column axis and then expanding, and this constricted portion is a peripheral edge on the side close to the rotational axis of the rotating body of the semiconductor wafer. Can be brought into contact with the portion.

  In this case, if the constriction part is too strongly in contact with the semiconductor wafer, the amount of generated particles increases, but if the contact force of the constriction part is too weak, the peripheral edge of the semiconductor wafer forms the constriction part of the chuck pin. A gap is formed between the portions, and the peripheral portion of the semiconductor wafer is in contact with the upper and lower slope portions while being rubbed and rubbed during ion implantation, thereby increasing the amount of particles generated. Therefore, when fixing the constricted part of the chuck pin against the semiconductor wafer, the contact force between the chuck pin and the semiconductor wafer is adjusted to be optimal, and particles are generated due to the contact between the semiconductor wafer and the chuck pin. It is desirable to suppress this. Further, a flat surface that receives a component of centrifugal force applied to the semiconductor wafer may be provided on the lower slope portion that forms the constricted portion.

  In addition, a swinging mechanism for swinging a turntable including a rotating body and an arm is provided, and the semiconductor wafer is swung by the swinging mechanism, and ions are implanted by the ion implantation means while being rotated by the rotation driving mechanism. The present invention is preferably applied to an ion implantation apparatus.

  In other words, in the case of an apparatus in which ions are implanted while the ion implantation unit is fixed, the semiconductor wafer is swung and rotated, and the ion implantation unit itself is moved and scanned, it is generally rotated. Since the rotational speed of the body is increased, friction generated between the semiconductor wafer and the holding mechanism may increase, and adverse effects due to particles are likely to occur. Therefore, it is particularly preferable to apply the present invention to such an ion implantation apparatus.

  According to the present invention, generation of particles due to contact between a semiconductor wafer and chuck pins can be suppressed.

  Hereinafter, embodiments of an ion implantation apparatus to which the present invention is applied will be described. In the following description, the same functional parts are denoted by the same reference numerals, and redundant description is omitted. FIG. 1 is a side view of the overall schematic configuration of the ion implantation apparatus of the present embodiment. FIG. 2 is a front view of the overall schematic configuration of the ion implantation apparatus according to the present embodiment, illustrating the operating state of the semiconductor wafer during ion implantation.

  As shown in FIG. 1, an ion implantation apparatus 10 accommodates an ion implantation means including an ion source 12 and a mass separator 14 and a semiconductor wafer such as silicon into which ions are implanted as a processing object. And a processing chamber 16 to be configured. The ion implantation means implants ions such as oxygen into the object to be processed.

  The ion source 12 is connected to the mass separator 14 via a vacuum evacuated pipe (not shown). The ion source 12 generates an ion beam 17 using, for example, oxygen ions using a microwave, and the generated ion beam 17 is mass-produced. The light is emitted to the separator 14 side. The mass separator 14 is connected to the processing chamber 16 via a vacuum evacuated pipe (not shown), and applies an electromagnetic force to the ion beam 17 from the ion source 12 to cause the ion beam 17 to be approximately 90 degrees. In addition to deflecting, only ion species having a necessary mass, for example, oxygen ions, are separated from the ion beam 17 and are taken out into the processing chamber 16.

  In the processing chamber 16, a motor 18 as a rotational drive mechanism, a motor box 20 that houses the motor 18, a rotating shaft 22 that is rotated by the motor 18, a rotating body 24 that is fitted to the rotating shaft 22, A plurality of arms 26 extending radially around the rotation shaft 22 of the rotating body 24 and a support plate 30 for the semiconductor wafer 28 provided at the tip of each arm 26 are accommodated.

  Further, a swing mechanism 34 that swings the motor 18, the rotating body 24, the arm 26, the support board 30 and the like in a pendulum shape in the processing chamber 16 via a swing arm 32 connected to the motor box 20 is provided in the processing. It is provided on the top surface of the chamber 16.

  As shown in FIG. 2, in the ion implantation apparatus of this embodiment, the semiconductor wafer 28 is swung in a pendulum shape as shown by the arrow A by the swing mechanism 34, and the arrow shown in the figure about the rotation shaft 22 by the motor 18. While rotating like B, ions are implanted by an ion implantation means.

  Further, as shown in FIG. 1, in the ion implantation apparatus 10 of the present embodiment, during ion implantation, the support plate 30 is rotated in a state in which the plate surface is oriented in a direction substantially orthogonal to the rotation shaft 22. Centrifugal force acts on the semiconductor wafer 28 placed on the board 30. In order to prevent the semiconductor wafer 28 from jumping out by the centrifugal force, each support plate 30 is slightly tilted so that the plate surface is directed toward the rotating shaft 22 so that the force of the centrifugal force is received by the plate surface. It is configured.

  However, the tilt of the support plate 30 cannot be made too large due to restrictions on ion implantation. In view of this, in the ion implantation apparatus 10 of the present embodiment, each support plate 30 is provided with a holding mechanism that holds the semiconductor wafer 28 placed thereon.

  FIG. 3 is a perspective view showing a schematic configuration of a holding mechanism for holding the semiconductor wafer 28 to the support board 30. As shown in FIG. 3, the support plate 30 is provided with a stopper 36 so as to come into contact with a peripheral portion of the semiconductor wafer 28 on the side farther from the rotating shaft 22 of the rotating body 24. A chuck mechanism 38 that presses and fixes the semiconductor wafer 28 against the stopper 36 is provided on the opposite side of the surface of the support plate 30 on which the semiconductor wafer 28 is placed. The chuck mechanism 38 is configured to press the semiconductor wafer 28 against the stopper 36 by rotating in the direction of the broken line arrow shown in FIG.

  The semiconductor wafer 28 is fixed to the support plate using the stopper 36 and the chuck mechanism 38, and ion implantation is performed. At the time of ion implantation, current flows from the semiconductor wafer 28 through the stopper 36 and dissipates heat from the contact portion of the semiconductor wafer 28 with the stopper 36, so that the temperature of the contact portion is lower than the other portions and temperature unevenness occurs. In some cases, the film thickness unevenness of the SOI film may occur. For this reason, a heater is provided on the surface opposite to the contact surface of the stopper 36 with, for example, the semiconductor wafer 28, and the stopper 36 is locally heated to suppress temperature unevenness and to suppress SOI film thickness unevenness. Can be configured to.

  4A and 4B are plan views showing the structure of the chuck mechanism as viewed from the opposite side of the surface on which the semiconductor wafer 28 is placed on the support plate 30. FIG. 4A shows the unchucked state, and FIG. 4B shows the chucked state. Show. In FIG. 4, for convenience of explanation, only the positional relationship between the chuck mechanism 38 and the semiconductor wafer 28 is shown, and the support plate 30 existing between the chuck mechanism 38 and the semiconductor wafer 28 is omitted. Further, only one of the left and right symmetrical chuck mechanisms 38 is shown. However, when the line connecting the center of the rotating body 24 and the center of the semiconductor wafer 28 is the symmetry axis 40, the symmetry axis 40 is axisymmetric. Similar configurations are arranged in pairs. Further, the upper side of the drawing in FIG. 4 indicates the center direction of the rotating body 24.

  As shown in FIGS. 3 and 4, the chuck mechanism has a line (symmetric axis) connecting the center of the rotating body 24 and the center of the semiconductor wafer 28 to the surface of the support plate 30 opposite to the surface on which the semiconductor wafer is placed. 40) and a support shaft 42 which is provided upright symmetrically with respect to the axis 40, and is rotatable around the support shaft 42 and has one end projecting outward from the peripheral portion of the semiconductor wafer 28 near the rotation shaft 22 of the rotating body 24. A link member 44 provided in the direction of the semiconductor wafer 28 from one end of the link member 44, and the chuck pin 46 on the side close to the rotation axis of the rotating body of the semiconductor wafer 28. A chuck spring 48 is provided that applies a force for rotating the link member 44 in a direction in contact with the peripheral edge.

  The link member 44 is formed linearly in the direction of one end where the chuck pin 46 is provided upright from the support shaft 42, and is bent in the direction away from the symmetry axis 40 from the support shaft 42 to the other end. ing. One end of the chuck spring 48 is connected to the other end of the link member 44, and the other end of the chuck spring 48 is provided upright on the surface of the support plate 30 opposite to the surface on which the semiconductor wafer is placed. It is connected to a spring fixing shaft 49.

  As shown in FIG. 4A, at the time of unchucking, a force that causes the link member 44 to rotate clockwise around the support shaft 42 by the chuck spring 48 (as indicated by solid line arrows in FIG. The force by the chuck spring 48 is limited by an unchuck mechanism (not shown). For this reason, the semiconductor wafer 28 and the chuck pin 46 are not in contact with each other and are brought into an unchucked state.

  On the other hand, as shown in FIG. 4B, at the time of chucking, the restriction of the force applied by the chuck spring 48 by the unchuck mechanism is released, and the link member 44 is rotated clockwise around the support shaft 42 by the chuck spring 48. . As a result, the chuck pin 46 is rotated in a direction (a solid arrow direction in FIG. 4) in contact with the peripheral edge portion of the semiconductor wafer 28 on the side close to the rotation axis of the rotating body to contact the semiconductor wafer 28.

  5A and 5B are longitudinal sectional views schematically showing the configuration of the chuck pin 46. FIG. 5A and 5B show the state of the semiconductor wafer 28 during chucking. As shown in FIG. 5 (a), the chuck pin 46 is formed in a columnar shape, and is formed by sequentially increasing the diameter in succession to the slope portion 46a formed by sequentially reducing the diameter along the column axis. The slope portion 46b has a constricted portion 46c. The constricted portion 46 c comes into contact with the peripheral edge portion of the semiconductor wafer 28 on the side close to the rotating shaft 22 of the rotating body 24. At the time of unchucking, the chuck pin 46 moves to the left side of the drawing, and the semiconductor wafer 28 slides on the slope portion 46a and is held by the back surface pin 50. Further, as shown in FIG. 5 (b), a flat portion 46d extending horizontally toward the column axis is provided continuously to the slope portion 46a that sequentially reduces in diameter, and the diameter is sequentially increased in an arc shape from the flat portion 46d. The constricted portion 46c can be formed by forming the slope portion 46b, and the centrifugal force applied to the semiconductor wafer 28 can be received by the flat portion 46d.

  By the way, in the conventional ion implantation apparatus having such a semiconductor wafer holding mechanism, consideration is given to harmful effects caused by particles caused by contact between the semiconductor wafer and the holding mechanism, particularly contact between the semiconductor wafer 28 and the chuck pin 46. It has not been.

  That is, from the viewpoint of firmly holding the semiconductor wafer 28 during ion implantation, it is desirable to strongly press the constricted portion 46c of the chuck pin 46 against the wafer. However, as the contact force between the chuck pin 46 and the wafer increases, the contact friction increases, and the silicon wafer may be damaged and particles may be generated. On the other hand, if the pressing force by the chuck pins 46 becomes too weak, the peripheral portion of the semiconductor wafer 28 is sandwiched between the upper and lower slope portions 46a and 46b forming the constricted portions 46c of the chuck pins 46. . As a result, the peripheral edge of the semiconductor wafer 28 may rub against the upper and lower slope portions 46a and 46b and rub against each other during ion implantation to increase the amount of particles generated.

  When the particles are generated, for example, the particles may adhere to the ion implantation surface of the semiconductor wafer 28, and the uniform ion implantation to the semiconductor wafer 28 may be hindered.

  Therefore, when the constricted portion 46c of the chuck pin 46 is fixed in contact with the semiconductor wafer 28, the contact force of the chuck pin 46 with respect to the semiconductor wafer 28 is adjusted so that the semiconductor wafer 28, the chuck pin 46, It is desirable to suppress the generation of particles due to the contact.

  In view of this, the ion implantation apparatus 10 of the present embodiment is configured such that the link member 44 is linked to the link spring 44 by the chuck spring 48 as shown in FIG. 4 in order to suppress the generation of particles due to the contact between the semiconductor wafer 28 and the chuck pins 46. A counterweight 52 is provided that applies a centrifugal force associated with the rotation of the rotating body 24 in a direction that prevents the rotation of the member 44. The counterweight 52 can be attached to and detached from the link member 44. Further, for example, by making it possible to exchange a plurality of types of counterweights 52 having different weights, the weight of the counterweight 52 can be varied to adjust the centrifugal force acting in a direction that prevents the link member 44 from rotating by the chuck spring 48. ing.

  Adjustment of the centrifugal force acting in a direction that prevents the counterweight 52 from rotating the link member 44 will be described with reference to FIG. When the rotating body 24 is rotated by the motor 18 in the chucked state as shown in FIG. 4B, centrifugal force acts on the counterweight 52 in the direction indicated by the dashed arrow. This centrifugal force causes the link member 44 to rotate counterclockwise about the support shaft 42. In other words, the centrifugal force has an effect of reducing the contact force of the chuck pins 46 to the semiconductor wafer 28 to bring the chuck state closer to the unchuck state. Further, since the centrifugal force changes according to the weight of the counterweight 52, the centrifugal force acting in the direction that prevents the link member 44 from rotating by the chuck spring 48 is adjusted by changing the weight of the counterweight 52. can do.

  FIG. 6 is a diagram showing the relationship between the weight of the counterweight 52 attached to the link member 44, the chucking force of the semiconductor wafer 28 by the chuck pins 46, and the number of particles generated. In FIG. 6, the horizontal axis is the weight of the counterweight (g), the left vertical axis is the chucking force (g · cm) of the semiconductor wafer 28 by the chuck pins 46, and the right vertical axis is the number of occurrences of particles of 0.2 μm or more. Is shown. The relationship between the weight of the counterweight and the chucking force is shown by line a in FIG. 6, and the relationship between the weight of the counterweight and the number of particles generated is shown by line b in FIG.

  As shown in line a, the chucking force decreases from about 6000 g · cm as the weight of the counterweight 52 increases. In other words, the weight of the counterweight 52 and the chucking force are substantially proportional. On the other hand, as shown by the line b, the relationship between the weight of the counterweight 52 and the number of generated particles is that particles with an increase in the weight of the counterweight when the weight of the counterweight 52 is between 0 g and 100 g. The number of occurrences of N is almost proportionally reduced from about 370 to about 200. When the weight of the counterweight 52 is greater than about 100 g, the number of particles generated increases to about 250 as the weight of the counterweight increases.

  When the weight of the counterweight 52 is about 110 g, the chucking force is almost 0 (g · cm). Therefore, when the weight of the counterweight 52 is less than about 110 g, the chucking state is greater than about 110 g. It can be seen that is in an unchucked state. That is, in this case, it can be seen that the most appropriate weight of the counterweight 52 from the two viewpoints of reliable fixing of the semiconductor wafer 28 and suppression of particles is around 100 g. In other words, the most appropriate contact force of the chuck pins 46 with respect to the semiconductor wafer 28 can be obtained. The semiconductor wafer 28 may have different properties related to particle generation, such as hardness, depending on the type, but the most appropriate weight of the counterweight 52 may be obtained in advance by experiments or the like according to the type of the semiconductor wafer 28 to be used. it can.

  As described above, according to the present embodiment, the contact weight of the chuck pin 46 with respect to the semiconductor wafer 28 is made different from the weight of the counter weight so that the semiconductor wafer 28 is securely fixed during ion implantation and the generation of particles is most suppressed. Can be adjusted. Therefore, according to the present invention, generation of particles due to contact between the semiconductor wafer and the chuck pins can be suppressed.

  In the present embodiment, the ion implantation apparatus has been described in which the semiconductor wafer 28 is swung in a pendulum shape by the swing mechanism 34 and ions are implanted while being rotated around the rotation shaft 22 by the motor 18. Is not limited. For example, an ion beam is scanned by moving the ion implantation means in a direction intersecting the rotation direction of the semiconductor wafer 28 while rotating the semiconductor wafer 28 around the rotation shaft 22 by the motor 18 without providing the swing mechanism 34. The present invention can also be applied to an ion implantation apparatus.

It is a side view of the whole schematic structure of the ion implantation apparatus of this embodiment. It is a front view of the whole schematic structure of the ion implantation apparatus of this embodiment, and demonstrates the operation state of the semiconductor wafer at the time of ion implantation. It is a perspective view which shows schematic structure of the holding mechanism to the support disk of a semiconductor wafer. It is a top view which shows the structure of the chuck mechanism seen from the surface opposite to the surface where the semiconductor wafer of a support plate is mounted, (A) shows an unchuck state, (B) shows a chuck state. It is a longitudinal cross-sectional view which shows the structure of a chuck pin typically. It is a figure which shows the relationship between the weight of the counterweight attached to a link member, the chucking force of the semiconductor wafer by a chuck pin, and the number of generated particles.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Ion implantation apparatus 22 Rotating shaft 24 Rotating body 26 Arm 28 Semiconductor wafer 30 Support board 32 Swing arm 34 Swing mechanism 36 Stopper 38 Chuck mechanism 40 Symmetric shaft 42 Support shaft 44 Link member 46 Chuck pin 48 Chuck spring 52 Counterweight

Claims (5)

A rotating body rotated by a rotation drive mechanism, a plurality of arms extending radially around the rotation axis of the rotating body, a semiconductor wafer support plate provided on each arm, and a mounting plate mounted on each support plate A stopper provided to contact the peripheral edge of the semiconductor wafer placed far from the rotation axis, a chuck mechanism that presses and fixes the semiconductor wafer against the stopper, and is fixed to each support plate Ion implantation means for implanting ions into the semiconductor wafer rotated by the rotational drive mechanism in a state,
The chuck mechanism is provided on the surface opposite to the surface on which the semiconductor wafer is placed on each of the support plates so as to stand upright symmetrically with respect to a line connecting the center of the rotating body and the center of the semiconductor wafer. A pair of support shafts, a link member that is rotatable about the support shaft and has one end projecting outward from a peripheral edge of the semiconductor wafer near the rotation shaft of the rotating body, A chuck pin provided upright from the one end in the direction of the semiconductor wafer, and the link member is rotated in a direction in which the chuck pin comes into contact with the peripheral edge of the semiconductor wafer near the rotation axis of the rotating body. An ion implantation apparatus configured to include a chuck spring that applies a force to be applied,
The link member is detachable with a counterweight that applies a centrifugal force associated with the rotation of the rotating body in a direction that prevents the rotation of the link member by the chuck spring, and the weight of the counterweight is varied. An ion implantation apparatus characterized in that a centrifugal force acting in a direction that prevents rotation of the link member can be adjusted.   2. The ion implantation apparatus according to claim 1, wherein a centrifugal force acting in a direction that prevents rotation of the link member is adjusted by changing the weight of the counterweight so that the generation amount of particles on the semiconductor wafer is minimized.   The chuck pin is formed in a columnar shape and has a constricted portion that is reduced in diameter along the column axis and then expanded, and the constricted portion is close to the rotation axis of the rotating body of the semiconductor wafer. The ion implantation apparatus according to claim 1, wherein the ion implantation apparatus is brought into contact with a peripheral edge portion on the side. A swing mechanism for swinging a turntable comprising the rotating body and the arm;
2. The ion implantation apparatus according to claim 1, wherein ions are implanted into the semiconductor wafer by the ion implantation unit while being swung by the rocking mechanism and being rotated by the rotation driving mechanism. 2. The ion implantation apparatus according to claim 1, wherein the ion implantation means is of a beam scan type in which ions are implanted into the semiconductor wafer while moving in a direction crossing a rotation direction of the semiconductor wafer by the rotation driving mechanism.

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