JP2010114207A - Heat treatment apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a heat treatment apparatus capable of suppressing effect due to rise in temperature of a shutter member. <P>SOLUTION: Halogen light is irradiated by a halogen heater 4 from the lower surface side of a semiconductor wafer W held in a chamber 6, and flashlight is irradiated from a flash heater 5 from the upper surface side to carry out heat treatment. A shutter part 2 inserts a shutter plate 22 at a shading position between the chamber 6 and the halogen heater 4 after the heat treatment to shade infrared ray from a halogen lamp HL, thereby increasing the cooling speed of the semiconductor wafer W. When the shutter plate 22 whose temperature is raised by receiving the infrared ray in the shading position is returned to a waiting position of a housing 21, the entire inside of the housing 21 including the shutter plate 22 and a slide driving mechanism 23 is cooled by operating a cooling fan 28 and forming an air current inside the housing 21. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a heat treatment apparatus for heating a substrate by irradiating light onto a semiconductor wafer, a glass substrate or the like (hereinafter simply referred to as “substrate”).

  Conventionally, a lamp annealing apparatus using a halogen lamp has been generally used in an ion activation process of a semiconductor wafer after ion implantation. In such a lamp annealing apparatus, ion activation of a semiconductor wafer is performed by heating (annealing) the semiconductor wafer to a temperature of about 1000 ° C. to 1100 ° C., for example. In such a heat treatment apparatus, the temperature of the substrate is raised at a rate of several hundred degrees per second by using the energy of light irradiated from the halogen lamp.

  On the other hand, in recent years, as semiconductor devices have been highly integrated, it is desired to reduce the junction depth as the gate length becomes shorter. However, even when ion activation of a semiconductor wafer is performed using the above-described lamp annealing apparatus that raises the temperature of the semiconductor wafer at a speed of several hundred degrees per second, ions such as boron and phosphorus implanted in the semiconductor wafer are heated. It was found that the phenomenon of deep diffusion occurs. When such a phenomenon occurs, there is a concern that the junction depth becomes deeper than required, which hinders good device formation.

  For this reason, only the surface of the semiconductor wafer into which ions have been implanted by irradiating the surface of the semiconductor wafer with flash light using a xenon flash lamp (hereinafter simply referred to as “xenon flash lamp”). There has been proposed a technique for raising the temperature of the material in an extremely short time (several milliseconds or less). The radiation spectral distribution of a xenon flash lamp ranges from the ultraviolet region to the near infrared region, has a shorter wavelength than the conventional halogen lamp, and almost coincides with the fundamental absorption band of a silicon semiconductor wafer. Therefore, when the semiconductor wafer is irradiated with flash light from the xenon flash lamp, the semiconductor wafer can be rapidly heated with little transmitted light. It has also been found that if the flash irradiation is performed for a very short time of several milliseconds or less, only the vicinity of the surface of the semiconductor wafer can be selectively heated. For this reason, if the temperature is raised for a very short time by a xenon flash lamp, only the ion activation can be performed without diffusing ions deeply.

  As a heat treatment apparatus using such a xenon flash lamp, in Patent Document 1, a pulse emitting lamp such as a flash lamp is disposed on the front surface side of a semiconductor wafer, and a continuous lighting lamp such as a halogen lamp is disposed on the back surface side. What performs desired heat processing by those combination is disclosed. In the heat treatment apparatus disclosed in Patent Document 1, a semiconductor wafer is preheated to a certain temperature with a halogen lamp or the like, and then heated to a desired processing temperature by pulse heating from a flash lamp.

JP-A-60-258928

  Patent Document 1 discloses that the power to a continuously lit lamp such as a halogen lamp is sufficiently reduced or the power supply is stopped to cool the semiconductor wafer. However, even if the power supply to the lit halogen lamp is stopped, the temperature of the filament and the lamp tube wall does not decrease immediately, so that infrared rays are still emitted from the halogen lamp toward the semiconductor wafer. For this reason, the cooling rate of the semiconductor wafer becomes slow, and a long time is required for the cooling time.

  In order to increase the cooling rate, it is conceivable to stop power supply to the halogen lamp and insert a shutter between the halogen lamp and the semiconductor wafer to forcibly completely block infrared rays. Although the cooling speed of the semiconductor wafer is increased by eliminating the influence of infrared rays emitted after the lights are turned off, the shutter itself is made of a material that is opaque to the infrared rays from the halogen lamp. The temperature will rise to When the temperature of the shutter rises excessively, there arises a problem that a peripheral mechanism such as a driving mechanism for driving the shutter and its control device becomes too high.

  Further, when the temperature of the shutter rises, there arises a problem that infrared rays are radiated from the shutter itself that should block the infrared rays from the halogen lamp and affect the cooling rate of the semiconductor wafer. This problem is particularly noticeable when a plurality of semiconductor wafers are continuously heat-treated under the same process conditions. That is, when processing the first semiconductor wafer of a lot processed under the same process conditions, the shutter temperature is low, whereas when processing the semiconductor wafer in the second half of the lot, the shutter becomes hot due to heat storage, Infrared radiation reduces the cooling rate of the semiconductor wafer. As a result, the processing temperature history differs between the first and second semiconductor wafers of the lot.

  Furthermore, when the shutter is provided, if the plate thickness is reduced, the rigidity is reduced and the deflection is increased. On the contrary, if the plate thickness is increased, the mass of the shutter is increased, which causes a problem that a large motor must be provided in the drive mechanism.

  This invention is made | formed in view of the said subject, and it aims at providing the heat processing apparatus which can suppress the influence by the temperature rise of a shutter member.

  Another object of the present invention is to provide a heat treatment apparatus with increased rigidity without increasing the mass of the shutter member.

  In order to solve the above-mentioned problems, the invention of claim 1 is directed to a heat treatment apparatus that heats a substrate by irradiating the substrate with light, the holding member that holds the substrate, and the substrate held by the holding member. A light irradiating means for irradiating light from one side; a shutter member for shielding light between the holding member and the light irradiating means; a light shielding position between the holding member and the light irradiating means; the holding member; A shutter drive unit that moves the shutter member between a standby position that opens between the light irradiation unit, a housing that houses the shutter member that waits at the standby position, and the shutter drive unit; And cooling means for cooling the inside of the body.

  According to a second aspect of the present invention, there is provided a heat treatment apparatus according to the first aspect of the present invention, wherein the casing is provided with a vent hole that allows ventilation, and the cooling means includes a fan.

  According to a third aspect of the present invention, in the heat treatment apparatus that heats the substrate by irradiating the substrate with light, the light is emitted from one side of the holding member that holds the substrate and the substrate held by the holding member. A light irradiating means for irradiating; a shutter member for blocking light between the holding member and the light irradiating means; a light shielding position between the holding member and the light irradiating means; the holding member; and the light irradiating means. A shutter driving unit that moves the shutter member between a standby position that opens the space and a cooling unit that cools the shutter member.

  According to a fourth aspect of the present invention, in the heat treatment apparatus according to the third aspect of the present invention, the heat treatment apparatus according to the third aspect further includes a housing that houses the shutter member that waits at the standby position and the shutter driving unit. Possible vents are formed, and the cooling means includes a fan attached to the housing.

  According to a fifth aspect of the present invention, in the heat treatment apparatus according to the fourth aspect of the present invention, a groove is formed on the surface of the shutter member.

  According to a sixth aspect of the present invention, in the heat treatment apparatus that heats the substrate by irradiating the substrate with light, the light is emitted from one side of the holding member that holds the substrate and the substrate held by the holding member. A light irradiating means for irradiating; a shutter member for blocking light between the holding member and the light irradiating means; a light shielding position between the holding member and the light irradiating means; the holding member; and the light irradiating means. Shutter driving means for moving the shutter member between a standby position where the shutter member is opened, and the shutter driving means cantilever supports the shutter member, and the shutter member has a surface on the surface of the shutter member. A groove having a longitudinal direction from the fulcrum supported by the driving means toward the tip is formed.

According to a seventh aspect of the present invention, in the heat treatment apparatus according to any one of the first to sixth aspects, the shutter member is made of a material having a linear expansion coefficient of 10 × 10 ⁻⁶ / K or less. It is characterized by that.

  According to an eighth aspect of the present invention, in the heat treatment apparatus according to the seventh aspect of the invention, the shutter member is made of titanium.

  The invention of claim 9 is the heat treatment apparatus according to any one of claims 1 to 8, further comprising a flash lamp for irradiating flash light from the other side of the substrate held by the holding member. It is characterized by.

  According to a tenth aspect of the present invention, in the heat treatment apparatus according to any one of the first to ninth aspects, the light irradiation means includes a halogen lamp.

  According to the first and second aspects of the present invention, since the shutter member that waits at the standby position and the cooling means that cools the inside of the housing that houses the shutter driving means are provided, the shutter member whose temperature has increased at the light-shielding position is standby. Even when returning to the position, the inside of the housing is cooled, and the influence of the temperature rise of the shutter member can be suppressed.

  According to the third to fifth aspects of the present invention, since the cooling means for cooling the shutter member that moves between the light shielding position and the standby position is provided, the shutter member that has risen in temperature at the light shielding position is cooled by the cooling means. It is cooled and the influence by the temperature rise of the shutter member can be suppressed.

  In particular, according to the invention of claim 5, since the groove is formed on the surface of the shutter member, the surface area increases, the heat radiation amount increases, and the cooling efficiency by the cooling means can be enhanced.

  According to the invention of claim 6, since the groove having the longitudinal direction from the fulcrum to the tip is formed on the surface of the shutter member, the rigidity can be increased without increasing the mass of the shutter member. it can.

According to the invention of claim 7, since the shutter member is made of a material having a linear expansion coefficient of 10 × 10 ⁻⁶ / K or less, the distortion of the shutter member due to a temperature rise can be suppressed.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 1 is a longitudinal sectional view showing a configuration of a heat treatment apparatus 1 according to the present invention. The heat treatment apparatus 1 of this embodiment is a flash lamp annealing apparatus that heats a semiconductor wafer W by irradiating flash light (flash light) onto a disk-shaped semiconductor wafer W having a diameter of 300 mm as a substrate.

  The heat treatment apparatus 1 includes a chamber 6 that accommodates a semiconductor wafer W, a flash heating unit 5 that houses a plurality of flash lamps FL, a halogen heating unit 4 that houses a plurality of halogen lamps HL, and a shutter unit 2. . A flash heating unit 5 is provided on the upper side of the chamber 6, and a halogen heating unit 4 is provided on the lower side. The heat treatment apparatus 1 includes a holding unit 7 that holds the semiconductor wafer W in a horizontal posture inside the chamber 6, and a transfer mechanism 10 that transfers the semiconductor wafer W between the holding unit 7 and the outside of the apparatus, Is provided. Furthermore, the heat treatment apparatus 1 includes a control unit 3 that controls each operation mechanism provided in the shutter unit 2, the halogen heating unit 4, the flash heating unit 5, and the chamber 6 to perform the heat treatment of the semiconductor wafer W.

  The chamber 6 is configured by mounting quartz chamber windows above and below a cylindrical chamber side portion 61. The chamber side portion 61 has a substantially cylindrical shape with upper and lower openings. The upper opening is closed by an upper chamber window 63 and the lower opening is closed by a lower chamber window 64. ing. The upper chamber window 63 constituting the ceiling of the chamber 6 is a disk-shaped member made of quartz, and functions as a quartz window that transmits light emitted from the flash heating unit 5 into the chamber 6. The lower chamber window 64 constituting the floor portion of the chamber 6 is also a disk-shaped member made of quartz and functions as a quartz window that transmits light from the halogen heating unit 4 into the chamber 6.

  A reflection ring 68 is attached to the upper part of the inner wall surface of the chamber side part 61, and a reflection ring 69 is attached to the lower part. The reflection rings 68 and 69 are both formed in an annular shape. The upper reflecting ring 68 is attached by fitting from above the chamber side portion 61. On the other hand, the lower reflection ring 69 is mounted by being fitted from the lower side of the chamber side portion 61 and fastened with a screw (not shown). That is, the reflection rings 68 and 69 are both detachably attached to the chamber side portion 61. An inner space of the chamber 6, that is, a space surrounded by the upper chamber window 63, the lower chamber window 64, the chamber side portion 61, and the reflection rings 68 and 69 is defined as a heat treatment space 65.

  By attaching the reflection rings 68 and 69 to the chamber side portion 61, a recess 62 is formed on the inner wall surface of the chamber 6. That is, a recess 62 surrounded by a central portion of the inner wall surface of the chamber side portion 61 where the reflection rings 68 and 69 are not mounted, a lower end surface of the reflection ring 68, and an upper end surface of the reflection ring 69 is formed. . The recess 62 is formed in an annular shape along the horizontal direction on the inner wall surface of the chamber 6, and surrounds the holding portion 7 that holds the semiconductor wafer W.

  The chamber side portion 61 and the reflection rings 68 and 69 are formed of a metal material (for example, stainless steel) having excellent strength and heat resistance. Further, the inner peripheral surfaces of the reflection rings 68 and 69 are mirrored by electrolytic nickel plating.

  The chamber side 61 is formed with a transfer opening (furnace port) 66 for carrying the semiconductor wafer W into and out of the chamber 6. The transfer opening 66 can be opened and closed by a gate valve 185. The transport opening 66 is connected to the outer peripheral surface of the recess 62. Therefore, when the gate valve 185 opens the transfer opening 66, the semiconductor wafer W is carried into the heat treatment space 65 through the recess 62 from the transfer opening 66 and the semiconductor wafer W is carried out from the heat treatment space 65. It can be performed. Further, when the gate valve 185 closes the transfer opening 66, the heat treatment space 65 in the chamber 6 becomes a sealed space.

Further, a gas supply hole 81 for supplying a processing gas (nitrogen gas (N ₂ ) in the present embodiment) to the heat treatment space 65 is formed in the upper portion of the inner wall of the chamber 6. The gas supply hole 81 is formed at a position above the recess 62 and may be provided in the reflection ring 68. The gas supply hole 81 is connected to a gas supply pipe 83 through a buffer space 82 formed in an annular shape inside the side wall of the chamber 6. The gas supply pipe 83 is connected to a nitrogen gas supply source 85. A valve 84 is inserted in the middle of the path of the gas supply pipe 83. When the valve 84 is opened, nitrogen gas is supplied from the nitrogen gas supply source 85 to the buffer space 82. The nitrogen gas flowing into the buffer space 82 flows so as to expand in the buffer space 82 having a smaller fluid resistance than the gas supply hole 81 and is supplied from the gas supply hole 81 into the heat treatment space 65.

  On the other hand, a gas exhaust hole 86 for exhausting the gas in the heat treatment space 65 is formed in the lower portion of the inner wall of the chamber 6. The gas exhaust hole 86 is formed at a position lower than the recess 62 and may be provided in the reflection ring 69. The gas exhaust hole 86 is connected to a gas exhaust pipe 88 through a buffer space 87 formed in an annular shape inside the side wall of the chamber 6. The gas exhaust pipe 88 is connected to the exhaust unit 90. A valve 89 is inserted in the middle of the path of the gas exhaust pipe 88. When the valve 89 is opened, the gas in the heat treatment space 65 is discharged from the gas exhaust hole 86 to the gas exhaust pipe 88 through the buffer space 87. A plurality of gas supply holes 81 and gas exhaust holes 86 may be provided along the circumferential direction of the chamber 6 or may be slit-shaped. The nitrogen gas supply source 85 and the exhaust unit 90 may be a mechanism provided in the heat treatment apparatus 1 or a utility of a factory where the heat treatment apparatus 1 is installed.

  A gas exhaust pipe 91 that exhausts the gas in the heat treatment space 65 is also connected to the tip of the transfer opening 66. The gas exhaust pipe 91 is connected to the exhaust unit 90 via a valve 92. By opening the valve 92, the gas in the chamber 6 is exhausted through the transfer opening 66.

  FIG. 2 is a perspective view of the holding unit 7. The holding unit 7 includes a susceptor 70 and a holding plate 74. The susceptor 70 is made of quartz, and is configured such that a plurality of claw portions 72 (four in this embodiment) are erected on an annular ring portion 71. FIG. 3 is a plan view of the holding plate 74. The holding plate 74 is a circular flat plate member made of quartz. The diameter of the holding plate 74 is larger than the diameter of the semiconductor wafer W. That is, the holding plate 74 has a larger planar size than the semiconductor wafer W. A plurality of bumps 75 are erected on the upper surface of the holding plate 74. In the present embodiment, a total of six bumps 75 are erected every 60 ° along a circumference that is concentric with the outer circumference of the holding plate 74. The diameter of the circle in which the six bumps 75 are arranged (the distance between the opposing bumps 75) is smaller than the diameter of the semiconductor wafer W, and in this embodiment is φ280 mm. Each bump 75 is a support pin made of quartz.

  In addition, on the upper surface of the holding plate 74, a plurality of (five in this embodiment) guide pins 76 are erected concentrically with the six bumps 75. The diameter of the circle in which the five guide pins 76 are arranged is slightly larger than the diameter of the semiconductor wafer W. Each guide pin 76 is made of quartz. Instead of the plurality of guide pins 76, an annular member having a tapered surface that forms a predetermined angle with the horizontal plane may be provided so as to expand upward.

  The susceptor 70 is attached to the chamber 6 by placing the ring portion 71 on the bottom surface of the recess 62. The holding plate 74 is placed on the claw 72 of the susceptor 70 attached to the chamber 6. The semiconductor wafer W carried into the chamber 6 is placed in a horizontal posture on the holding plate 74 held by the susceptor 70.

  FIG. 4 is an enlarged view of the vicinity of the bump 75 when the semiconductor wafer W is placed on the holding plate 74. A support rod 73 is erected on each claw portion 72 of the susceptor 70. When the upper end portion of the support rod 73 is fitted into a recess formed in the lower surface of the holding plate 74, the holding plate 74 is held by the susceptor 70 without being displaced.

  Further, the bump 75 and the guide pin 76 are also erected by being fitted into a recess formed in the upper surface of the holding plate 74. The upper ends of the bumps 75 and the guide pins 76 erected on the upper surface of the holding plate 74 protrude from the upper surface. The semiconductor wafer W is supported by point contact by a plurality of bumps 75 erected on the holding plate 74 and placed on the holding plate 74. The distance from the height position of the upper end of the bump 75 to the upper surface of the holding plate 74 is 0.5 mm or more and 3 mm or less (1 mm in this embodiment). Therefore, the semiconductor wafer W is supported by the plurality of bumps 75 with an interval of 0.5 mm or more and 3 mm or less from the upper surface of the holding plate 74. In addition, the height position of the upper end of the guide pin 76 is higher than the upper end of the bump 75, and the positional deviation of the semiconductor wafer W in the horizontal direction is prevented by the plurality of guide pins 76. The bump 75 and the guide pin 76 may be processed with quartz integrally with the holding plate 74.

  Further, when the annular member having the tapered surface is provided instead of the guide pin 76, the horizontal displacement of the semiconductor wafer W is prevented by the annular member. A region facing the semiconductor wafer W supported by at least the plurality of bumps 75 on the upper surface of the holding plate 74 is a flat surface. In this case, the semiconductor wafer W is supported by a plurality of bumps 75 at an interval of 0.5 mm or more and 3 mm or less from the plane of the holding plate 74.

  As shown in FIGS. 2 and 3, the holding plate 74 has an opening 78 and a notch 77 penetrating vertically. The notch 77 is provided to pass the probe tip of the contact thermometer 130 using a thermocouple. On the other hand, the opening 78 is provided for receiving radiation light (infrared light) emitted from the lower surface of the semiconductor wafer W held by the holding plate 74 by the radiation thermometer 120.

  FIG. 5 is a plan view of the transfer mechanism 10. FIG. 6 is a side view of the transfer mechanism 10. The transfer mechanism 10 includes two transfer arms 11. The transfer arm 11 has an arc shape that follows the generally annular recess 62. Two lift pins 12 are erected on each transfer arm 11. Each transfer arm 11 can be rotated by a horizontal movement mechanism 13. The horizontal movement mechanism 13 includes a transfer operation position (a position indicated by a solid line in FIG. 5) for transferring the pair of transfer arms 11 to the holding unit 7 and the semiconductor wafer W held by the holding unit 7. It is moved horizontally between the retracted positions (two-dot chain line positions in FIG. 5) that do not overlap in plan view. As the horizontal movement mechanism 13, each transfer arm 11 may be rotated by an individual motor, or a pair of transfer arms 11 may be interlocked by a single motor using a link mechanism. It may be moved.

  The pair of transfer arms 11 are moved up and down together with the horizontal moving mechanism 13 by the lifting mechanism 14. When the elevating mechanism 14 raises the pair of transfer arms 11 at the transfer operation position, a total of four lift pins 12 pass through the through holes 79 (see FIGS. 2 and 3) formed in the holding plate 74, The upper end of the lift pin 12 protrudes from the upper surface of the holding plate 74. On the other hand, when the elevating mechanism 14 lowers the pair of transfer arms 11 at the transfer operation position, the lift pins 12 are extracted from the through holes 79, and the horizontal movement mechanism 13 moves the pair of transfer arms 11 so as to open each of them. The transfer arm 11 moves to the retracted position. The retracted position of the pair of transfer arms 11 is directly above the ring portion 71 of the susceptor 70. Since the ring portion 71 is placed on the bottom surface of the recess 62, the retracted position of the transfer arm 11 is inside the recess 62. Note that an exhaust mechanism (not shown) is also provided in the vicinity of a portion where the drive unit (the horizontal movement mechanism 13 and the lifting mechanism 14) of the transfer mechanism 10 is provided, and the atmosphere around the drive unit of the transfer mechanism 10 is provided. Is discharged to the outside of the chamber 6.

  Returning to FIG. 1, the flash heating unit 5 provided above the chamber 6 includes a light source including a plurality of (30 in the present embodiment) xenon flash lamps FL inside the housing 51, and an upper part of the light source. And a reflector 52 provided so as to cover. A lamp light emission window 53 is mounted on the bottom of the casing 51 of the flash heating unit 5. The lamp light emission window 53 constituting the floor of the flash heating unit 5 is a plate-like quartz window made of quartz. By installing the flash heating unit 5 above the chamber 6, the lamp light emission window 53 faces the upper chamber window 63. The flash lamp FL irradiates the heat treatment space 65 with flash light from above the chamber 6 through the lamp light emission window 53 and the upper chamber window 63.

  Each of the plurality of flash lamps FL is a rod-shaped lamp having a long cylindrical shape, and the longitudinal direction of each of the flash lamps FL is along the main surface of the semiconductor wafer W held by the holding unit 7 (that is, along the horizontal direction). They are arranged in a plane so as to be parallel to each other. Therefore, the plane formed by the arrangement of the flash lamps FL is also a horizontal plane.

  The xenon flash lamp FL has a rod-shaped glass tube (discharge tube) in which xenon gas is sealed and an anode and a cathode connected to a capacitor at both ends thereof, and an outer peripheral surface of the glass tube. And a triggered electrode. Since xenon gas is an electrical insulator, electricity does not flow into the glass tube under normal conditions even if electric charges are accumulated in the capacitor. However, when the insulation is broken by applying a high voltage to the trigger electrode, the electricity stored in the capacitor instantaneously flows into the glass tube due to the discharge between the electrodes at both ends, and the excitation of the xenon atoms or molecules at that time Light is emitted. In such a xenon flash lamp FL, the electrostatic energy previously stored in the capacitor is converted into an extremely short light pulse of 0.1 to 10 milliseconds, so that the continuous lighting such as the halogen lamp HL is possible. It has the characteristic that it can irradiate extremely strong light compared with a light source.

  In addition, the reflector 52 is provided above the plurality of flash lamps FL so as to cover all of them. The basic function of the reflector 52 is to reflect flash light emitted from the plurality of flash lamps FL toward the holding unit 7. The reflector 52 is formed of an aluminum alloy plate, and the surface (the surface facing the flash lamp FL) is roughened by blasting to exhibit a satin pattern.

  A plurality of halogen lamps HL (40 in this embodiment) are built in the halogen heating unit 4 provided below the chamber 6. The plurality of halogen lamps HL irradiate the heat treatment space 65 from below the chamber 6 through the lower chamber window 64. FIG. 7 is a plan view showing the arrangement of the plurality of halogen lamps HL. In the present embodiment, 20 halogen lamps HL are arranged in two upper and lower stages. Each halogen lamp HL is a rod-shaped lamp having a long cylindrical shape. The 20 halogen lamps HL in both the upper and lower stages are arranged so that their longitudinal directions are parallel to each other along the main surface of the semiconductor wafer W held by the holding unit 7 (that is, along the horizontal direction). Yes. Therefore, the plane formed by the arrangement of the halogen lamps HL in both the upper stage and the lower stage is a horizontal plane.

  Further, as shown in FIG. 7, the arrangement density of the halogen lamps HL in the region facing the peripheral portion is higher than the region facing the central portion of the semiconductor wafer W held by the holding portion 7 in both the upper stage and the lower stage. Yes. That is, in both the upper and lower stages, the arrangement pitch of the halogen lamps HL is shorter on the end side than on the center part of the lamp array. For this reason, it is possible to irradiate a larger amount of light to the peripheral portion of the semiconductor wafer W where the temperature is likely to decrease during heating by light irradiation from the halogen heating unit 4.

  Further, the lamp group composed of the upper halogen lamp HL and the lamp group composed of the lower halogen lamp HL are arranged so as to intersect in a lattice pattern. That is, a total of 40 halogen lamps HL are arranged so that the longitudinal direction of the upper halogen lamps HL and the longitudinal direction of the lower halogen lamps HL are orthogonal to each other.

  The halogen lamp HL is a filament-type light source that emits light by making the filament incandescent by energizing the filament disposed inside the glass tube. Inside the glass tube, a gas obtained by introducing a trace amount of a halogen element (iodine, bromine, etc.) into an inert gas such as nitrogen or argon is enclosed. By introducing a halogen element, it is possible to set the filament temperature to a high temperature while suppressing breakage of the filament. Therefore, the halogen lamp HL has a characteristic that it has a longer life than a normal incandescent bulb and can continuously radiate strong light. Further, since the halogen lamp HL is a rod-shaped lamp, it has a long life, and by arranging the halogen lamp HL along the horizontal direction, the radiation efficiency to the upper semiconductor wafer W becomes excellent.

  As shown in FIG. 1, the halogen heating unit 4 is provided with a radiation thermometer 140 for measuring the temperature of the semiconductor wafer W held on the holding plate 74. The radiation thermometer 140 receives infrared light emitted from the lower surface of the semiconductor wafer W from directly below.

  Further, the heat treatment apparatus 1 includes a shutter unit 2 on the side of the halogen heating unit 4 and the chamber 6. FIG. 8 is a longitudinal sectional view showing the configuration of the shutter unit 2. The shutter unit 2 is configured by including a shutter plate 22 and a slide drive mechanism 23 inside a housing 21.

FIG. 9 is a perspective view of the shutter plate 22. FIG. 10 is a cross-sectional view of the shutter plate 22 of FIG. 9 as seen from line AA. The shutter plate 22 is a plate-like member that is opaque to the halogen light of the halogen lamp HL. The shutter plate 22 of this embodiment is formed of titanium (Ti). Titanium is a metal material that is relatively lightweight (specific gravity 4.5), has high strength, and is rich in corrosion resistance and heat resistance. Titanium has a relatively small linear expansion coefficient of 8.4 × 10 ⁻⁶ / K, and its dimensional change is small even at high temperatures.

  Six screw holes 22a are formed on the base end side of the shutter plate 22 (front side in FIG. 9). The shutter plate 22 is supported by the slide drive mechanism 23 in a cantilever manner by being screwed with six screw holes 22a.

  A plurality of grooves 24 are formed on the surface of the shutter plate 22. Each of the plurality of grooves 24 has a longitudinal direction in which at least a part thereof is directed from the proximal end side to the distal end side of the shutter plate 22, that is, the direction from the fulcrum supporting the shutter plate 22 to the distal end. It is shaped like this. As shown in FIG. 10, the grooves 24 are formed on both the upper and lower surfaces of the shutter plate 22. Specifically, on the upper surface of the shutter plate 22, a groove 24 is formed from the lower surface side at a convex portion between adjacent grooves 24. The same applies to the lower surface of the shutter plate 22.

  The slide drive mechanism 23 slides the shutter plate 22 in the horizontal direction along the guide rail 25. When the slide drive mechanism 23 moves the shutter plate 22 forward from the standby position (solid line position in FIG. 1) in the housing 21, the shutter plate 22 moves from the opening 26 on the front surface of the housing 21 to the chamber 6 and the halogen heating unit 4. It passes through the insertion passage 49 between them and reaches the light shielding position (the two-dot chain line position in FIG. 1) between the halogen heating unit 4 and the holding unit 7. When the shutter plate 22 is inserted at a light shielding position between the halogen heating unit 4 and the holding unit 7, the lower chamber window 64 and the plurality of halogen lamps HL are optically blocked, and heat treatment is performed from the plurality of halogen lamps HL. Light traveling toward the holding unit 7 in the space 65 is blocked.

  Conversely, when the slide drive mechanism 23 retracts the shutter plate 22 from the light shielding position, the shutter plate 22 moves out of the space between the halogen heating unit 4 and the holding unit 7 through the insertion path 49 and the opening 26 and enters the standby position. Return to. The shutter plate 22 and the slide drive mechanism 23 waiting at the standby position are completely accommodated inside the housing 21. Therefore, when the shutter plate 22 moves back to the standby position, the space between the halogen heating unit 4 and the holding unit 7 is opened, and light can be emitted from the halogen heating unit 4 toward the holding unit 7.

  In addition, a plurality of ventilation holes 27 that allow ventilation are formed on the rear surface of the housing 21, and a cooling fan 28 is installed inside the housing 21. By operating the cooling fan 28, an air flow as shown by an arrow AR8 in FIG. That is, inside the housing 21, the air taken in from the rear vent 27 flows toward the front opening 26.

  As shown in FIG. 9, the shutter plate 22 has a small hole 22b. When the shutter plate 22 moves forward and reaches the light shielding position, the small hole 22b is positioned immediately above the radiation thermometer 140. Therefore, even when the shutter plate 22 is inserted at the light shielding position and the space between the halogen heating unit 4 and the heat treatment space 65 is shielded from light, the radiation thermometer 140 radiates from the semiconductor wafer W through the small hole 22b. Infrared light can be received. Since the diameter of the small hole 22b is very small, the emitted light leaking from the halogen heating unit 4 to the heat treatment space 65 when the shutter plate 22 is inserted at the light shielding position is small enough to be ignored.

  Returning to FIG. 1, an exhaust unit 29 is provided below the gap between the halogen heating unit 4 and the shutter unit 2. The exhaust unit 29 exhausts the airflow formed by the cooling fan 28 and exhausted from the opening 26 of the housing 21.

  A radiation thermometer 120 and a contact thermometer 130 for measuring the temperature of the semiconductor wafer W held on the holding plate 74 are provided inside the chamber 6 (see FIG. 2). The radiation thermometer 120 is installed in the recess 62 obliquely below the semiconductor wafer W held by the holding unit 7. The radiation thermometer 120 measures the intensity (energy amount) of the radiated light (infrared light) radiated from the lower surface of the semiconductor wafer W held on the holding plate 74 of the holding unit 7 to determine the temperature of the semiconductor wafer W. taking measurement. The radiation thermometer 140 provided in the halogen heating unit 4 also measures the temperature of the semiconductor wafer W based on the same principle. On the other hand, the contact-type thermometer 130 has a built-in thermocouple, and measures the temperature of the semiconductor wafer W by contacting the lower peripheral edge of the semiconductor wafer W held by the holding plate 74 of the holding unit 7. The tip of the contact thermometer 130 contacts the lower surface of the semiconductor wafer W held on the holding plate 74 through the notch 77 of the holding plate 74.

  Further, the control unit 3 controls the various operation mechanisms provided in the heat treatment apparatus 1. The configuration of the control unit 3 as hardware is the same as that of a general computer. That is, the control unit 3 stores a CPU that performs various arithmetic processes, a ROM that is a read-only memory that stores basic programs, a RAM that is a readable and writable memory that stores various information, control software, data, and the like. It has a magnetic disk.

  Next, a processing procedure of the semiconductor wafer W in the heat treatment apparatus 1 will be briefly described. Here, the semiconductor wafer W to be processed is a semiconductor substrate to which an impurity (ion) is added by an ion implantation method, and the activation of the added impurity is performed by a flash heating process by the heat treatment apparatus 1. FIG. 11 is a flowchart showing a processing procedure for the semiconductor wafer W in the heat treatment apparatus 1. The processing procedure of the semiconductor wafer W shown below is executed by the control unit 3 controlling each operation mechanism of the heat treatment apparatus 1.

  First, the air supply valve 84 is opened, and the exhaust valves 89 and 92 are opened to start supply / exhaust to the chamber 6 (step S1). When the valve 84 is opened, nitrogen gas is supplied from the gas supply hole 81 to the heat treatment space 65. When the valve 89 is opened, the gas in the chamber 6 is exhausted from the gas exhaust hole 86. Thereby, the nitrogen gas supplied from the upper part of the heat treatment space 65 in the chamber 6 flows downward and is exhausted from the lower part of the heat treatment space 65.

  When the valve 92 is opened, the gas in the chamber 6 is exhausted from the transfer opening 66 and the atmosphere around the drive unit of the transfer mechanism 10 is exhausted by an exhaust mechanism (not shown). Note that nitrogen gas is continuously supplied to the heat treatment space 65 during the heat treatment of the semiconductor wafer W in the heat treatment apparatus 1, and the supply amount is appropriately changed according to the processing steps of FIG. 11.

  Subsequently, the gate valve 185 is opened to open the transfer opening 66, and the semiconductor wafer W after the ion implantation is transferred into the heat treatment space 65 in the chamber 6 through the transfer opening 66 by a transfer robot outside the apparatus ( Step S2). The semiconductor wafer W carried in by the carrying robot advances to a position directly above the holding unit 7 and stops. Then, the pair of transfer arms 11 of the transfer mechanism 10 moves horizontally from the retracted position to the transfer operation position and rises, so that the lift pins 12 protrude from the upper surface of the holding plate 74 through the through holes 79, and the semiconductor wafer. W is received.

  After the semiconductor wafer W is placed on the lift pins 12, the transfer robot leaves the heat treatment space 65 and the transfer opening 66 is closed by the gate valve 185. When the pair of transfer arms 11 are lowered, the semiconductor wafer W is transferred from the transfer mechanism 10 to the holding plate 74 of the holding unit 7 and held in a horizontal posture. The semiconductor wafer W is supported in point contact by six bumps 75 at a predetermined interval (1 mm in this embodiment) from the upper surface of the holding plate 74. The pair of transfer arms 11 lowered to below the holding plate 74 is retracted to the retracted position, that is, inside the recess 62 by the horizontal moving mechanism 13.

  After the semiconductor wafer W is placed and held on the holding plate 74 of the holding unit 7, the 40 halogen lamps HL are turned on all at once and preheating (assist heating) is started (step S3). The halogen light emitted from the halogen lamp HL is irradiated from the back surface of the semiconductor wafer W through the lower chamber window 64 and the holding plate 74 formed of quartz. By receiving light from the halogen lamp HL, the semiconductor wafer W is preheated and the temperature rises. In addition, since the transfer arm 11 of the transfer mechanism 10 is retracted to the inside of the recess 62, there is no obstacle to the preheating by the halogen lamp HL.

  In the preliminary heating stage, the temperature of the peripheral portion of the semiconductor wafer W, which is more likely to radiate heat, tends to be lower than the central portion. However, the arrangement density of the halogen lamps HL in the halogen heating portion 4 is The region facing the peripheral portion is higher than the region facing the central portion. For this reason, the light quantity irradiated to the peripheral part of the semiconductor wafer W which tends to generate heat increases, and the in-plane temperature distribution of the semiconductor wafer W in the preheating stage can be made more uniform.

  Furthermore, since the inner peripheral surface of the reflection ring 69 attached to the chamber side portion 61 is a mirror surface, the amount of light reflected toward the peripheral edge of the semiconductor wafer W by the inner peripheral surface of the reflection ring 69 increases. The in-plane temperature distribution of the semiconductor wafer W in the preheating stage can be made more uniform.

  When preheating with the halogen lamp HL is performed, the temperature of the semiconductor wafer W is measured by the contact thermometer 130. That is, a contact thermometer 130 incorporating a thermocouple comes into contact with the lower surface of the semiconductor wafer W held by the holding unit 7 via the notch 77 of the holding plate 74 and measures the temperature of the wafer being heated. The temperature of the semiconductor wafer W measured by the contact thermometer 130 is transmitted to the control unit 3. The controller 3 monitors whether or not the temperature of the semiconductor wafer W that is heated by light irradiation from the halogen lamp HL has reached a predetermined preheating temperature T1. Note that when the temperature of the semiconductor wafer W is increased by light irradiation from the halogen lamp HL, temperature measurement by the radiation thermometers 120 and 140 is not performed. This is because the halogen light irradiated from the halogen lamp HL enters the radiation thermometers 120 and 140 as disturbance light, and accurate temperature measurement cannot be performed.

  In the present embodiment, the preheating temperature T1 is 800 ° C. When the contact thermometer 130 detects that the temperature of the semiconductor wafer W has reached the preheating temperature T1, flash light is emitted from the flash lamp FL of the flash heating unit 5 toward the semiconductor wafer W (step S4). ). At this time, a part of the flash light emitted from the flash lamp FL goes directly to the holding part 7 in the heat treatment space 65, and another part is once reflected by the reflector 52 and then goes into the heat treatment space 65. The flash heating of the semiconductor wafer W is performed by the irradiation of the flash light. Since the flash heating is performed by flash irradiation from the flash lamp FL, the surface temperature of the semiconductor wafer W can be increased in a short time.

  That is, the flash light irradiated from the flash lamp FL of the flash heating unit 5 has an irradiation time of about 0.1 to 10 milliseconds, in which the electrostatic energy stored in advance is converted into an extremely short light pulse. It is a very short and strong flash. Then, the surface temperature of the semiconductor wafer W flash-heated by flash irradiation from the flash lamp FL instantaneously rises to a processing temperature T2 of about 1000 ° C. to 1100 ° C., and the impurities added to the semiconductor wafer W are activated. After being done, the surface temperature drops rapidly. As described above, in the heat treatment apparatus 1, the surface temperature of the semiconductor wafer W can be raised and lowered in a very short time, so that the impurities are activated while suppressing diffusion of impurities added to the semiconductor wafer W due to heat. Can do. Since the time required for activation of the added impurity is extremely short compared to the time required for thermal diffusion, activation is possible even for a short time when no diffusion of about 0.1 millisecond to 10 millisecond occurs. Is completed.

  In the heat treatment apparatus 1 of the present embodiment, the semiconductor wafer W is preheated to the preheating temperature T1 (800 ° C.) by the halogen lamp HL, and then flash heating is performed by flash irradiation from the flash lamp FL. When the temperature of the semiconductor wafer W reaches 600 ° C. or higher, thermal diffusion of the added impurities may occur, but the halogen lamp HL can raise the temperature of the semiconductor wafer W to 800 ° C. relatively quickly. Impurity diffusion can be minimized. Further, the surface temperature of the semiconductor wafer W can be rapidly raised to the processing temperature T2 by performing flash irradiation from the flash lamp FL after the temperature of the semiconductor wafer W is raised to the preheating temperature T1. Further, since the temperature increase range by the flash heating from the preheating temperature T1 to the processing temperature T2 is relatively small, the energy of the flash light irradiated from the flash lamp FL can be made relatively small. As a result, the semiconductor wafer W is heated during the flash heating. The thermal shock given to the can be reduced.

  After the flash heating is finished, the halogen lamp HL is turned off after a predetermined time has elapsed, and the temperature of the semiconductor wafer W is started to be lowered (step S5). At the same time as the halogen lamp HL is turned off, the shutter plate 22 is inserted into the light shielding position between the halogen heating unit 4 and the chamber 6 (step S6). Even if the halogen lamp HL is turned off, the temperature of the filament and the tube wall does not immediately decrease, but infrared rays are continuously emitted from the hot filament and the tube wall for a while, which prevents the temperature of the semiconductor wafer W from being lowered. By inserting the shutter plate 22, infrared rays radiated from the halogen lamp HL immediately after being turned off to the heat treatment space 65 are cut off, and the temperature drop rate of the semiconductor wafer W can be increased.

  Moreover, temperature measurement by the radiation thermometers 120 and 140 is started when the shutter plate 22 is inserted into the light shielding position. That is, the radiation thermometers 120 and 140 measure the intensity of the infrared light emitted from the lower surface of the semiconductor wafer W held by the holding unit 7 to measure the temperature of the semiconductor wafer W during the temperature drop. The temperature of the semiconductor wafer W measured by the radiation thermometers 120 and 140 is transmitted to the control unit 3. Note that the temperature measurement of the semiconductor wafer W during the temperature drop after the flash heating may be performed by only one of the radiation thermometers 120 and 140.

  After the temperature of the semiconductor wafer W has dropped to a predetermined temperature or lower, the pair of transfer arms 11 of the transfer mechanism 10 moves again from the retracted position to the transfer operation position and rises, whereby the lift pins 12 are held by the holding plate 74. The semiconductor wafer W that protrudes from the upper surface of the substrate and is heat-treated is received from the holding plate 74. Subsequently, the transfer opening 66 closed by the gate valve 185 is opened, and the semiconductor wafer W placed on the lift pins 12 is unloaded by the transfer robot outside the apparatus (step S7), and the semiconductor wafer in the heat treatment apparatus 1 is transferred. The W flash heat treatment is completed.

  After the heat-treated semiconductor wafer W is unloaded from the chamber 6, the shutter plate 22 is extracted from the light shielding position and moved to a standby position in the housing 21 (step S8). While the shutter plate 22 is inserted into the light shielding position in step S6 and the temperature of the semiconductor wafer W is decreasing, the shutter plate 22 absorbs infrared rays emitted from the halogen lamp HL immediately after being turned off and gradually increases in temperature. As a result, it has been found that the temperature rises to about 300 ° C. when the shutter plate 22 returns to the standby position in step S8. In order to prevent such a high-temperature shutter plate 22 from returning to the standby position and causing thermal damage to the slide drive mechanism 23 inside the housing 21 and its control device, in the present embodiment, A plurality of ventilation holes 27 that allow ventilation are formed, and a cooling fan 28 is installed inside the housing 21.

  When the shutter plate 22 returns to the standby position, the cooling fan 28 operates to cool the entire housing 21 including the shutter plate 22 and the slide drive mechanism 23 (step S9). That is, when the cooling fan 28 is activated, an air flow as shown by an arrow AR8 in FIG. 8 from the vent hole 27 on the back surface of the housing 21 to the opening 26 on the front surface is formed, and this air current causes the entire interior of the housing 21 to be entirely. Is cooled.

  Then, it progresses to step S10, and when the heat processing of all the semiconductor wafers W contained in the lot are not completed, it returns to step S2 and the heat processing similar to the above is performed with respect to the new semiconductor wafer W. That is, the processes in steps S2 to S10 are repeated until the heating process for all the semiconductor wafers W constituting the lot is completed.

  In the present embodiment, when the shutter plate 22 whose temperature has been raised at the light shielding position returns to the standby position in the casing 21, the cooling fan 28 is activated to cool the entire casing 21. At this time, since the slide drive mechanism 23 and its control device are also cooled by the cooling fan 28, they can be prevented from being thermally damaged by the shutter plate 22 whose temperature has risen. Further, since the shutter plate 22 itself is cooled by the cooling fan 28, it is possible to suppress the shutter plate 22 from exerting a thermal influence on the mechanism in the housing 21.

  In addition, a plurality of grooves 24 are formed on the surface of the shutter plate 22 with the longitudinal direction from the fulcrum supporting the shutter plate 22 to the tip. By forming the plurality of grooves 24, the surface area of the shutter plate 22 increases, the heat dissipation effect increases, and the temperature of the shutter plate 22 decreases more rapidly. Further, the direction from the fulcrum of the shutter plate 22 toward the tip coincides with the direction from the back surface to the front surface of the casing 21, that is, the direction in which the airflow formed by the cooling fan 28 flows, and the plurality of grooves 24 Airflow will flow along. For this reason, the cooling effect of the shutter plate 22 by the cooling fan 28 can be further enhanced.

  Cooling the shutter plate 22 not only prevents thermal damage to the internal mechanism of the housing 21 but also stabilizes the heat treatment process of the semiconductor wafer W. That is, when the first semiconductor wafer W of the lot to be processed under the same process conditions is processed, since the shutter plate 22 is not heated, the shutter plate 22 is inserted into the light shielding position in step S6 and the semiconductor wafer W is processed. When the temperature of the semiconductor wafer W is decreasing, there is no possibility that the temperature decrease of the semiconductor wafer W is hindered by the infrared radiation from the shutter plate 22. If the shutter plate 22 accumulates heat as the lot processing progresses, when the semiconductor wafer W in the latter half of the lot is processed, the cooling rate of the semiconductor wafer W may decrease due to infrared radiation from the shutter plate 22 inserted in the light shielding position. is there. In the present embodiment, the shutter plate 22 is cooled by the cooling fan 28 every time the heat treatment of one semiconductor wafer W is completed and the shutter plate 22 returns to the standby position in the housing 21. For this reason, the temperature of the shutter plate 22 at the time of insertion into the light shielding position in step S6 is generally stable throughout the lot, and even when the semiconductor wafer W in the latter half of the lot is processed, the temperature from the shutter plate 22 is reduced. A decrease in the cooling rate of the semiconductor wafer W due to infrared radiation can be suppressed. As a result, the heat treatment process can be stabilized by making the temperature history of the treatment uniform between the first and second semiconductor wafers W of the lot.

  Further, the halogen heating unit 4 is provided with a gas cooling mechanism (not shown), and the halogen lamp HL is cooled by ejecting a predetermined gas (for example, air). The gas whose temperature has been raised by heat exchange with the halogen lamp HL is discharged from the insertion passage 49, and the temperature-increased gas enters the inside of the housing 21 from the opening 26 of the shutter portion 2 facing the insertion passage 49. There is also a fear. In the present embodiment, the cooling fan 28 forms an air flow from the vent hole 27 on the rear surface of the housing 21 to the opening 26 on the front surface. Intrusion from the opening 26 can be prevented. The gas discharged from the insertion passage 49 is collected and exhausted by the exhaust unit 29 together with the air exhausted from the opening 26 of the shutter unit 2.

  In the present embodiment, the mass of the shutter plate 22 is reduced by forming a plurality of grooves 24 on the surface of the shutter plate 22. The plurality of grooves 24 are formed such that at least a part thereof has a longitudinal direction from the fulcrum of the shutter plate 22 toward the tip. For this reason, the rigidity can be increased without increasing the mass of the shutter plate 22, and as a result, the deflection of the shutter plate 22 can be suppressed, and the size of the motor of the slide drive mechanism 23 does not need to be increased.

While the embodiments of the present invention have been described above, the present invention can be modified in various ways other than those described above without departing from the spirit of the present invention. For example, instead of the shutter plate 22 shown in FIGS. 9 and 10, a shutter plate 122 as shown in FIGS. 12 and 13 may be provided in the shutter unit 2. FIG. 12 is a perspective view of the shutter plate 122. FIG. 13 is a cross-sectional view of the shutter plate 122 of FIG. 12 as seen from the line BB. This shutter plate 122 is also formed of titanium with a relatively small linear expansion coefficient of 8.4 × 10 ⁻⁶ / K.

  Similar to the shutter plate 22 of the above embodiment, six screw holes 122a are formed on the base end side of the shutter plate 122. The shutter plate 122 is supported by the slide drive mechanism 23 in a cantilever manner by being screwed with six screw holes 122a. The shutter plate 122 is provided with a small hole 122 b for the infrared thermometer 140 of the halogen heating unit 4 to receive infrared light emitted from the semiconductor wafer W.

  The shutter plate 122 is an uneven plate formed by bending a thin titanium plate (for example, a plate thickness of 1 mm). The recessed portion of the formed unevenness can be regarded as the groove 124. That is, a plurality of grooves 124 are formed on the surface of the shutter plate 122. As in the above-described embodiment, each of the plurality of grooves 124 has a direction in which at least a part thereof is directed from the proximal end side to the distal end side of the shutter plate 122, that is, from the fulcrum where the slide drive mechanism 23 supports the shutter plate 122 to the distal end. It is shaped so that the direction toward it is the longitudinal direction. In addition, since the shutter plate 122 is an uneven plate formed by bending, the convex portion on the upper surface side inevitably becomes a concave portion seen from the lower surface, and conversely, the convex portion on the lower surface side becomes a concave portion seen from the upper surface, The grooves 124 are alternately formed on the upper and lower surfaces of the shutter plate 122. As a result, the cross-sectional shape (FIG. 13) of the shutter plate 122 is similar to the cross-sectional shape (FIG. 10) of the shutter plate 22 of the above embodiment in the sense that the unevenness is repeated.

  Ribs 120 for reinforcing the strength are attached to some of the plurality of grooves 124 formed in the shutter plate 122. The rib 120 may be attached to the groove 124 by welding. In FIG. 13, the rib 120 is not shown.

  Even if the shutter plate 122 as shown in FIGS. 12 and 13 is provided in the shutter portion 2, the same effect as the shutter plate 22 of the above-described embodiment can be obtained. That is, the cooling effect of the shutter plate 122 by the cooling fan 28 can be enhanced by providing a plurality of grooves 124 whose longitudinal direction is the direction from the fulcrum supporting the shutter plate 122 to the tip of the slide drive mechanism 23. The rigidity can be increased without increasing the mass of the shutter plate 122.

In the above embodiment, the shutter plate 22 is formed of titanium. However, instead of this, the shutter plate 22 may be formed of ceramics, for example. However, if the shutter plate 22 is formed of a material having a large linear expansion coefficient, there is a risk of distortion when the temperature is raised at the light shielding position. Therefore, a material having a low linear expansion coefficient, specifically, a linear expansion coefficient of 10 × 10 ^{− It} is preferably formed of a material of ⁶ / K or less. Titanium is a metal material, but has a relatively low linear expansion coefficient of 8.4 × 10 ⁻⁶ / K, is lightweight and has high strength, and is therefore a suitable material for the shutter plate 22.

  In the above embodiment, when the shutter plate 22 returns to the standby position in the housing 21 in step S9 of FIG. 11, the cooling fan 28 is operated to generate an air flow inside the housing 21. Although the shutter plate 22 is cooled, the cooling fan 28 may be operated at all times so that an air flow is always formed in the housing 21. In this way, the internal mechanism of the housing 21 such as the slide drive mechanism 23 can be always cooled. That is, the cooling fan 28 may be operated at least when the shutter plate 22 is in the standby position.

  In the above-described embodiment, the shutter plate 22 is cooled by forming an air flow inside the casing 21 by the cooling fan 28. However, the present invention is not limited to this. 22 may be cooled. FIG. 14 is a diagram illustrating an example in which a Peltier element is attached to the shutter plate. A plurality of Peltier elements 223 are attached to the upper surface of the shutter plate 222. When the shutter plate 222 returns to the standby position in the housing 21 in step S9, the Peltier element 223 is operated to cool the shutter plate 222. Even if it does in this way, not only can it suppress that it has a thermal influence on the internal mechanism of the housing | casing 21 like the said embodiment, but the heat processing of the semiconductor wafer W can also be stabilized. The shutter plate 222 may be provided with a groove similar to the above, and the Peltier element 223 may be embedded in the groove. In addition, since the shutter plate 222 can be cooled at an arbitrary time if configured as shown in FIG. 14, the Peltier element 223 is operated when the shutter plate 222 receives infrared rays from the halogen lamp HL at the light shielding position. Thus, the shutter plate 222 may be cooled. In this way, the temperature rise of the shutter plate 222 at the light shielding position itself can be suppressed.

  FIG. 15 is a diagram illustrating an example in which cooling water is circulated through the shutter plate. Inside the shutter plate 322, a cooling water pipe 323 is provided meandering. The inlet side and the outlet side of the cooling water pipe 323 are connected to a cooling water supply source 324. When the shutter plate 322 returns to the standby position in the housing 21 in step S9, the cooling water supply source 324 is operated to flow cooling water through the cooling water pipe 323 to cool the shutter plate 322. Even if it does in this way, not only can it suppress that it has a thermal influence on the internal mechanism of the housing | casing 21 like the said embodiment, but the heat processing of the semiconductor wafer W can also be stabilized. Similarly to the example of FIG. 14, since the shutter plate 322 can be cooled at an arbitrary time, the cooling water supply source 324 when the shutter plate 322 receives infrared rays from the halogen lamp HL at the light shielding position. May be operated to cool the shutter plate 322. However, in the case of the configuration as shown in FIG. 15, the shutter plate 322 repeats advancing and retreating movement, so that a pipe connecting the cooling water supply source 324 and the cooling water pipe 323 needs to use a flexible tube.

  In the above embodiment, the cooling fan 28 is operated to take outside air into the housing 21 as it is from the vent hole 27. However, a temperature control unit is provided on the back surface or inside of the housing 21 to provide a predetermined temperature. Alternatively, an air flow whose temperature has been adjusted may be formed inside the casing 21.

  In the above embodiment, when the temperature of the semiconductor wafer W reaches the preheating temperature T1, the flash lamp FL is irradiated while the halogen lamp HL is turned on. As soon as the temperature reaches the preheating temperature T1, the halogen lamp HL is turned off, and the shutter plate 22 is inserted into the light shielding position to irradiate the flash light from the flash lamp FL. Further, after the temperature of the semiconductor wafer W is increased by the halogen lamp HL to exceed the preheating temperature T1, the halogen lamp HL is turned off and the shutter plate 22 is inserted into the light shielding position so that the temperature of the semiconductor wafer W is lowered to the preheating temperature T1. You may make it perform flash irradiation at the time of doing. In this case, the temperature of the semiconductor wafer W being lowered is measured by the radiation thermometer 120 or the radiation thermometer 140, and the flash lamp FL is irradiated when the measured temperature is lowered to the preheating temperature T1.

  In the above embodiment, the flash heating unit 5 is provided with 30 flash lamps FL. However, the present invention is not limited to this, and the number of flash lamps FL can be any number. . The flash lamp FL is not limited to a xenon flash lamp, and may be a krypton flash lamp. Further, the number of halogen lamps HL provided in the halogen heating unit 4 is not limited to 40, and may be an arbitrary number.

  The substrate to be processed by the heat treatment apparatus according to the present invention is not limited to a semiconductor wafer, and may be a glass substrate used for a liquid crystal display device or the like.

It is a longitudinal cross-sectional view which shows the structure of the heat processing apparatus which concerns on this invention. It is a perspective view of a holding part. It is a top view of a holding plate. It is the figure which expanded the bump vicinity when a semiconductor wafer was mounted in the holding plate. It is a top view of a transfer mechanism. It is a side view of a transfer mechanism. It is a top view which shows arrangement | positioning of a some halogen lamp. It is a longitudinal cross-sectional view which shows the structure of a shutter part. It is a perspective view of a shutter board. It is sectional drawing which looked at the shutter board | plate of FIG. 9 from the AA line. It is a flowchart which shows the process sequence of the semiconductor wafer in the heat processing apparatus of FIG. It is a perspective view which shows the other example of a shutter board | plate. It is sectional drawing which looked at the shutter board of FIG. 12 from the BB line. It is a figure which shows the example which attached the Peltier device to the shutter board | plate. It is a figure which shows the example which circulates cooling water to a shutter board | plate.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Heat processing apparatus 2 Shutter part 3 Control part 4 Halogen heating part 5 Flash heating part 6 Chamber 7 Holding part 10 Transfer mechanism 21 Housing | casing 22,122,222,322 Shutter plate 23 Slide drive mechanism 24,124 Groove 26 Opening 27 Through Pore 28 Cooling fan 29 Exhaust part 61 Chamber side part 62 Recessed part 63 Upper chamber window 64 Lower chamber window 65 Heat treatment space 70 Susceptor 74 Holding plate 120,140 Radiation thermometer 130 Contact type thermometer 223 Peltier element 323 Cooling water pipe FL Flash Lamp HL Halogen lamp W Semiconductor wafer

Claims (10)

A heat treatment apparatus for heating a substrate by irradiating the substrate with light,
A holding member for holding the substrate;
Light irradiation means for irradiating light from one side of the substrate held by the holding member;
A shutter member that shields light between the holding member and the light irradiation means;
Shutter driving means for moving the shutter member between a light shielding position between the holding member and the light irradiating means and a standby position for opening between the holding member and the light irradiating means;
A housing that houses the shutter member and the shutter driving means that wait at the standby position;
Cooling means for cooling the inside of the housing;
A heat treatment apparatus comprising: The heat treatment apparatus according to claim 1, wherein
The casing is formed with a vent hole that allows ventilation,
The heat treatment apparatus, wherein the cooling means includes a fan. A heat treatment apparatus for heating a substrate by irradiating the substrate with light,
A holding member for holding the substrate;
Light irradiation means for irradiating light from one side of the substrate held by the holding member;
A shutter member that shields light between the holding member and the light irradiation means;
Shutter driving means for moving the shutter member between a light shielding position between the holding member and the light irradiating means and a standby position for opening between the holding member and the light irradiating means;
Cooling means for cooling the shutter member;
A heat treatment apparatus comprising: The heat treatment apparatus according to claim 3, wherein
A housing for accommodating the shutter member and the shutter driving means waiting at the standby position;
The casing is formed with a vent hole that allows ventilation,
The heat treatment apparatus, wherein the cooling means includes a fan attached to the casing. The heat treatment apparatus according to claim 4, wherein
A heat treatment apparatus, wherein a groove is formed on a surface of the shutter member. A heat treatment apparatus for heating a substrate by irradiating the substrate with light,
A holding member for holding the substrate;
Light irradiation means for irradiating light from one side of the substrate held by the holding member;
A shutter member that shields light between the holding member and the light irradiation means;
Shutter driving means for moving the shutter member between a light shielding position between the holding member and the light irradiating means and a standby position for opening between the holding member and the light irradiating means;
With
The shutter driving means cantilever supports the shutter member,
A heat treatment apparatus characterized in that a groove having a longitudinal direction in a direction from a fulcrum supported by the shutter driving means toward the tip is formed on the surface of the shutter member. In the heat processing apparatus in any one of Claims 1-6,
The heat treatment apparatus, wherein the shutter member is formed of a material having a linear expansion coefficient of 10 × 10 ⁻⁶ / K or less. The heat treatment apparatus according to claim 7, wherein
The heat treatment apparatus, wherein the shutter member is made of titanium. In the heat processing apparatus in any one of Claims 1-8,
A heat treatment apparatus, further comprising: a flash lamp that irradiates flash light from the other side of the substrate held by the holding member. In the heat treatment apparatus according to any one of claims 1 to 9,
The light irradiation means includes a halogen lamp.

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