JP2010100895A - Pretreatment liquid for reduction type electroless gold plating and electroless gold plating method - Google Patents

Pretreatment liquid for reduction type electroless gold plating and electroless gold plating method Download PDF

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JP2010100895A
JP2010100895A JP2008273032A JP2008273032A JP2010100895A JP 2010100895 A JP2010100895 A JP 2010100895A JP 2008273032 A JP2008273032 A JP 2008273032A JP 2008273032 A JP2008273032 A JP 2008273032A JP 2010100895 A JP2010100895 A JP 2010100895A
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gold plating
electroless gold
compound
pretreatment liquid
acid
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JP5305079B2 (en
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Akio Takahashi
昭男 高橋
Hiroshi Yamamoto
弘 山本
Yukihisa Hiroyama
幸久 廣山
Kiyoshi Hasegawa
清 長谷川
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Resonac Corp
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Hitachi Chemical Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of stably performing electroless gold plating to an independent fine wiring pad part, and to provide a pretreatment liquid for reduction type electroless gold plating used therefor. <P>SOLUTION: The pretreatment liquid for reduction type electroless gold plating is obtained by blending one or more kinds of components selected from a phenyl compound, an ascorbic acid compound, a hydrazine compound and a thiourea compound into an aqueous solution comprising at least one kind of component selected from the group consisting of sulfurous acid and the salt thereof and at least one kind of component selected from the group consisting of thiosulfuric acid and the salt thereof independently or in combination. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

本発明は,還元型無電解金めっき用前処理液及び無電解金めっき方法に関する。   The present invention relates to a pretreatment liquid for reducing electroless gold plating and an electroless gold plating method.

プリント配線板や半導体パッケージ、セラミック電子部品、半導体などの多くの電子部品には、はんだ接合性や部品の耐腐食性の向上、ワイヤーボンディング接合やフリップチップ接合時の信頼性向上を目的に金めっきが施されている。金めっきは、工法の違いにより電気金めっきと無電解金めっきに大別される。近年、電子部品の小型化や高性能化の要求により、金めっきを施す必要がある部品は年々小さくなり、しかも独立回路になってきている。このため、限られた配線スペースを確保するため金めっき時にリード配線を必要としない無電解金めっきの必要性が高まってきている。   Many electronic parts such as printed wiring boards, semiconductor packages, ceramic electronic parts, and semiconductors are plated with gold for the purpose of improving solderability, corrosion resistance of parts, and reliability during wire bonding and flip chip bonding. Is given. Gold plating is roughly divided into electro gold plating and electroless gold plating depending on the method of construction. In recent years, due to demands for miniaturization and high performance of electronic parts, parts that need to be plated with gold have become smaller year by year and have become independent circuits. For this reason, in order to secure a limited wiring space, there is an increasing need for electroless gold plating that does not require lead wiring during gold plating.

一般的に無電解金めっきは、置換型無電解金めっき(置換金めっき)と還元型無電解金めっき(無電解金めっき)に大別できる。置換金めっきは、銅配線上に耐腐食性向上や下地銅と金めっき皮膜の拡散を抑制するために施された無電解ニッケルめっき皮膜と置換金めっき液中の金イオンとのイオン化傾向の差を利用した置換反応で金を析出させる工法である。この置換金めっきは、下地ニッケルの溶解と共に金が析出するため、金めっき皮膜の成長によりニッケル皮膜の溶解できる部分が減少して、析出反応が徐々に低下していく。置換金めっきで析出できる金膜厚は0.05〜0.1μm程度である。はんだ接合用途では、金は保護膜程度の厚さがあればよく置換金めっきが使用されるのが一般的である。   In general, electroless gold plating can be broadly divided into substitutional electroless gold plating (substitution gold plating) and reduction type electroless gold plating (electroless gold plating). Displacement gold plating is the difference in ionization tendency between electroless nickel plating film applied to improve corrosion resistance on copper wiring and suppressing diffusion of base copper and gold plating film and gold ions in replacement gold plating solution. Is a method of depositing gold by a substitution reaction utilizing In this displacement gold plating, gold precipitates with the dissolution of the underlying nickel, so that the portion where the nickel film can be dissolved decreases due to the growth of the gold plating film, and the precipitation reaction gradually decreases. The gold film thickness that can be deposited by displacement gold plating is about 0.05 to 0.1 μm. In solder joint applications, it is generally sufficient that the gold is as thick as a protective film, and substitution gold plating is generally used.

しかし、ワイヤーボンディング接合やフリップチップ接合では接続信頼性や接合安定性のため、要求される金膜厚は、通常、0.3〜0.7μmであり、置換金めっきのみでは形成できないため、無電解金めっきで厚付金めっきを行う必要がある。   However, in wire bonding bonding and flip chip bonding, the required gold film thickness is usually 0.3 to 0.7 μm because of connection reliability and bonding stability. It is necessary to perform thick gold plating by electrolytic gold plating.

従来からある無電解金めっきは、例えば特開昭62−99477号公報記載の無電解金めっき液のようにシアン化合物を含み、pH範囲が12以上と高アルカリであるため被めっき材に負荷が掛かり使用できる電子部品が限られていた。また、当初開発されたpHが中性でシアン化合物を使用しない無電解金めっきは、液安定性が低く、量産に対応できない状況にあった。   Conventional electroless gold plating contains a cyanide compound, such as an electroless gold plating solution described in JP-A-62-99477, and has a high alkaline pH range of 12 or more. The electronic parts that can be used are limited. In addition, the electroless gold plating that was originally developed and has a neutral pH and does not use a cyanide compound has a low liquid stability and cannot cope with mass production.

そこで、この膜厚を安定性の高い置換金めっきで実現するために、特開平9−176864号公報記載の置換金めっき液のような置換反応を促進させた置換厚付型無電解金めっき(置換厚付金めっき)や、下地ニッケルに反応する還元剤を置換型金めっき液に添加した置換還元併用型無電解金めっき(置換還元併用金めっき)が開発されてきた。   Therefore, in order to realize this film thickness by substitution gold plating having high stability, substitution-type thick electroless gold plating that promotes substitution reaction like substitution gold plating solution described in JP-A-9-176864 ( Substitution-thick gold plating) and substitution-reduction-use electroless gold plating (replacement-reduction-use gold plating) in which a reducing agent that reacts with the underlying nickel is added to a substitution-type gold plating solution have been developed.

しかしながら、この反応はその多くに置換反応を利用しているため、下地ニッケル皮膜の腐食が局部的に加速されて空隙が発生し、ワイヤーボンディング剥れや強度不足、フリップチップ接合の密着不良、更には、はんだ接合不良や接続信頼性不足を引き起こしてしまう欠点があることが分かってきた。   However, since this reaction uses substitution reaction for many of them, corrosion of the underlying nickel film is locally accelerated to generate voids, peeling of wire bonding and insufficient strength, poor adhesion of flip chip bonding, Has been found to have defects that cause poor solder joints and poor connection reliability.

一方、中性低温領域で使用可能な無電解金めっき液も改良が進み、安定性が高く量産できる無電解金めっき液も数多く開発され、商品化されてきた。しかしながら、これらの無電解金めっきにも多く課題があった。その一つが独立した微小パットに無電解金めっきが析出し難い現象である。   On the other hand, electroless gold plating solutions that can be used in a neutral low temperature region have been improved, and many electroless gold plating solutions that have high stability and can be mass-produced have been developed and commercialized. However, there are many problems with these electroless gold platings. One of them is a phenomenon in which electroless gold plating hardly deposits on an independent fine pad.

上記に示したように、プリント配線板や半導体パッケージ、セラミック電子部品、半導体などの多くの電子部品は、高密度、高性能化が進み、部品内の独立回路の微小部分に金めっきを施す要求が高まってきている。無電解金めっきの性質上、還元剤の酸化は前処理である置換型金めっき皮膜の金表面で発生する。このため、めっき面積が小さくなるに従って還元剤の酸化反応が発生し難くなり、独立回路の微小部分に無電解金めっきが析出しない現象が散見するようになってきた。
特開昭62−99477号公報 特開平9−176864号公報
As indicated above, many electronic components such as printed wiring boards, semiconductor packages, ceramic electronic components, and semiconductors are becoming increasingly dense and high-performance, and there is a need to apply gold plating to a small part of an independent circuit within the component. Is growing. Due to the nature of electroless gold plating, oxidation of the reducing agent occurs on the gold surface of the displacement-type gold plating film, which is a pretreatment. For this reason, as the plating area becomes smaller, the oxidizing reaction of the reducing agent is less likely to occur, and a phenomenon that the electroless gold plating does not deposit on the minute part of the independent circuit has come to be observed.
JP-A-62-99477 JP-A-9-176864

本発明は、独立した微小配線パット部分に安定して無電解金めっきを施すことのできる方法と、それに使用される還元型無電解金めっき用前処理液を提供することを目的とする。   An object of the present invention is to provide a method capable of stably performing electroless gold plating on an independent micro wiring pad portion, and a pretreatment solution for reducing electroless gold plating used therefor.

本発明者は上記に示した目的を達成するために誠意検討を行った結果、亜硫酸塩とチオ硫酸塩を単独もしくは混合した水溶液に、フェニル化合物、アスコルビン酸化合物、ヒドラジン化合物、チオ尿素化合物から選ばれた1種類以上を含んで成る処理液に、置換金めっきが施された被めっき物を浸漬させた後、水洗工程を行わないで直接還元型無電解金めっき液に浸漬することにより、上記目的を達成できることを見出し、本発明の完成に至った。
即ち、本発明は下記の項目に係る発明を提供することである。
(1)亜硫酸及びその塩からなる群より選ばれた少なくとも1種類の成分と、チオ硫酸及びその塩からなる群より選ばれた少なくとも1種類の成分とを単独もしくは両方を含んだ水溶液に、フェニル化合物、アスコルビン酸化合物、ヒドラジン化合物、チオ尿素化合物から選ばれた1種類以上の成分を配合して成ることを特徴とする還元型無電解金めっき用前処理液。
(2)pHが4〜10であることを特徴とする上記(1)記載の還元型無電解金めっき用前処理液。
(3)置換金めっきが施された被めっき物を、上記(1)または(2)記載の還元型無電解金めっき用前処理液に浸漬させた後、水洗工程を行わないで直接、還元型無電解金めっき液に浸漬することを特徴とする無電解金めっき方法。
As a result of sincerity studies to achieve the above-mentioned object, the present inventor selected a phenyl compound, an ascorbic acid compound, a hydrazine compound, and a thiourea compound in an aqueous solution in which sulfite and thiosulfate were used alone or mixed. After immersing the object to be plated, which has been subjected to displacement gold plating, in the treatment liquid comprising one or more kinds of the above, by immersing directly in a reducing electroless gold plating liquid without performing a water washing step, The inventors have found that the object can be achieved and have completed the present invention.
That is, this invention is providing the invention which concerns on the following item.
(1) An aqueous solution containing at least one component selected from the group consisting of sulfurous acid and its salt and at least one component selected from the group consisting of thiosulfuric acid and its salt, alone or both, A pretreatment solution for reducing electroless gold plating, comprising one or more components selected from a compound, an ascorbic acid compound, a hydrazine compound, and a thiourea compound.
(2) The pretreatment liquid for reducing electroless gold plating according to the above (1), wherein the pH is 4 to 10.
(3) After immersing the object to be plated that has been subjected to displacement gold plating in the pretreatment liquid for reducing electroless gold plating described in (1) or (2) above, direct reduction without performing a water washing step Electroless gold plating method characterized by immersing in a type electroless gold plating solution.

本発明の還元型無電解金めっき用前処理液を使用することによって、電子部品の孤立したワイヤーボンディングパットやフリップチップ用のパットに均一な無電解金めっきを均一に施すことが可能となる。従って、置換金めっき後これら処理液で処理を行い、水洗工程を行わないでそのまま無電解金めっきで処理することにより、微小で独立したパット部分へのめっきを安定して確保でき、プリント基板やパッケージ基板、半導体などの電子部品の更なる小型化、高性能化が可能となる。   By using the pretreatment liquid for reducing electroless gold plating of the present invention, uniform electroless gold plating can be uniformly applied to isolated wire bonding pads and flip chip pads of electronic components. Therefore, by performing treatment with these treatment liquids after substitution gold plating, and performing the treatment with electroless gold plating as it is without performing a water washing step, it is possible to stably secure plating on a minute and independent pad portion, Electronic components such as package substrates and semiconductors can be further reduced in size and performance.

以下、本発明を詳細に説明する。
(還元型無電解金めっき用前処理液)
本発明の還元型無電解金めっき用前処理液は、亜硫酸及びその塩からなる群より選ばれた少なくとも1種類の成分と、チオ硫酸及びその塩からなる群より選ばれた少なくとも1種類の成分とを単独もしくは両方を含んだ水溶液に、更に、フェニル化合物、アスコルビン酸化合物、ヒドラジン化合物、チオ尿素化合物から選ばれた1種類以上の成分(化合物)を配合して成る。
Hereinafter, the present invention will be described in detail.
(Pretreatment solution for reducing electroless gold plating)
The pretreatment liquid for reducing electroless gold plating of the present invention includes at least one component selected from the group consisting of sulfurous acid and its salt, and at least one component selected from the group consisting of thiosulfuric acid and its salt And one or more components (compounds) selected from a phenyl compound, an ascorbic acid compound, a hydrazine compound, and a thiourea compound.

(亜硫酸及びその塩)
亜硫酸塩はフェニル化合物、アスコルビン酸化合物、ヒドラジン化合物、チオ尿素化合物などの還元剤の酸化反応を防止するために使用される。使用できる亜硫酸塩としては、亜硫酸ナトリウム、亜硫酸カリウム、亜硫酸アンモニウム、亜硫酸水素ナトリウム、亜硫酸水素カリウム等を挙げることができるが、これらの成分に限定されるものではない。添加量としては10〜100g/Lが好適であるが、10g/L未満であると添加した還元剤の酸化を抑制する効果が不十分で、還元剤が酸化されてしまい、長期間使用できない危険性がある。一方、100g/Lを超えると溶解性が低くなり、再結晶化が起こってしまう可能性がある。従って、より好適には20〜60g/L、更に好適には30〜50g/Lである。
(Sulfurous acid and its salts)
Sulphites are used to prevent oxidation reactions of reducing agents such as phenyl compounds, ascorbic acid compounds, hydrazine compounds, and thiourea compounds. Examples of sulfites that can be used include sodium sulfite, potassium sulfite, ammonium sulfite, sodium hydrogen sulfite, potassium hydrogen sulfite and the like, but are not limited to these components. The addition amount is preferably 10 to 100 g / L, but if it is less than 10 g / L, the effect of suppressing the oxidation of the added reducing agent is insufficient, the reducing agent is oxidized, and there is a risk that it cannot be used for a long time. There is sex. On the other hand, if it exceeds 100 g / L, the solubility becomes low and recrystallization may occur. Therefore, it is more preferably 20 to 60 g / L, and further preferably 30 to 50 g / L.

(チオ硫酸及びその塩)
チオ硫酸塩は上記亜硫酸塩と同様の効果を示す。使用できるチオ硫酸塩としてはチオ硫酸ナトリウム、チオ硫酸カリウム、チオ硫酸アンモニウム等を挙げることができるが、これらの成分に特に限定されるものではない。添加量としては10〜100g/Lが好適であるが、10g/L未満であると添加した還元剤の酸化を抑制する効果が不十分で、還元剤が酸化されてしまい、長期間使用できない危険性がある。一方、100g/Lを超えると溶解性が低くなり、再結晶化が起こってしまう可能性がある。従って、より好適には20〜60g/L、更に好適には30〜50g/Lである。
(Thiosulfuric acid and its salts)
Thiosulfate has the same effect as the above sulfite. Examples of the thiosulfate that can be used include sodium thiosulfate, potassium thiosulfate, and ammonium thiosulfate. However, the thiosulfate is not particularly limited to these components. The addition amount is preferably 10 to 100 g / L, but if it is less than 10 g / L, the effect of suppressing the oxidation of the added reducing agent is insufficient, and the reducing agent is oxidized, so that it cannot be used for a long time. There is sex. On the other hand, if it exceeds 100 g / L, the solubility becomes low and recrystallization may occur. Therefore, it is more preferably 20 to 60 g / L, and further preferably 30 to 50 g / L.

また、亜硫酸塩と混合して使用すると亜硫酸塩とチオ硫酸塩の相乗効果により、亜硫酸塩、チオ硫酸塩の添加量を少なくした状態でも、フェニル化合物、アスコルビン酸化合物、ヒドラジン化合物、チオ尿素化合物などの還元剤の酸化反応を防止できる。また、長期間保存した場合も還元剤の自己酸化反応を防止できる利点がある。   In addition, when used in combination with sulfites, phenyl compounds, ascorbic acid compounds, hydrazine compounds, thiourea compounds, etc., even when the amount of sulfites and thiosulfates added is reduced due to the synergistic effect of sulfites and thiosulfates. The oxidation reaction of the reducing agent can be prevented. In addition, there is an advantage that the autooxidation reaction of the reducing agent can be prevented even when stored for a long time.

(フェニル化合物、アスコルビン酸化合物、ヒドラジン化合物、チオ尿素化合物)
これらの物質は、一般的に、非シアン系の無電解金めっき液に使用されている還元剤である。無電解金めっき処理では、置換金めっき後、水洗を行い、更に上記還元型無電解金めっき用処理液に浸漬した後、水洗工程を行わないでそのまま、無電解金めっき液に入る。このため、還元剤が無電解金めっき液に持ち込まれるため、使用している無電解金めっきの還元剤と還元型無電解金めっき用前処理液の還元剤は同じ成分を使用したほうが好適であるが、しかし、これに特に限定されるものではない。
(Phenyl compounds, ascorbic acid compounds, hydrazine compounds, thiourea compounds)
These substances are generally reducing agents used in non-cyanide electroless gold plating solutions. In the electroless gold plating treatment, after the substitution gold plating, the substrate is washed with water, and further immersed in the above-described reduction type electroless gold plating treatment solution, and then enters the electroless gold plating solution as it is without performing the water washing step. For this reason, since the reducing agent is brought into the electroless gold plating solution, it is preferable to use the same components for the reducing agent used in the electroless gold plating and the reducing agent in the pretreatment solution for reducing electroless gold plating. However, it is not particularly limited to this.

使用できるフェニル化合物としては、フェノール、o−クレゾール、p−クレゾール、o−エチルフェノール、p−エチルフェノール、t−ブチルフェノール、o−アミノフェノール、p−アミノフェノール、ヒドロキノン、カテコール、ピロガロール、メチルヒドロキノン、アニリン、o−フェニレンジアミン、p−フェニレンジアミン、o−トルイジン、p−トルイジン、o−エチルアニリン、p−エチルアニリン、ヒドロキノンスルホン酸ナトリウム、ヒドロキノンスルホン酸カリウム、没食子酸、ピロガロール−4−カルボン酸、ピロガロール−4,6−ジカルボン酸、ピロガロールモノメチルエーテル等が使用できる。これらの中でも、ヒドロキノン、メチルヒドロキノン、ピロガロール、ヒドロキノンスルホン酸ナトリウム、ヒドロキノンスルホン酸カリウム等がより好ましい。しかし、上記成分に限定されるものではない。   Examples of phenyl compounds that can be used include phenol, o-cresol, p-cresol, o-ethylphenol, p-ethylphenol, t-butylphenol, o-aminophenol, p-aminophenol, hydroquinone, catechol, pyrogallol, methylhydroquinone, Aniline, o-phenylenediamine, p-phenylenediamine, o-toluidine, p-toluidine, o-ethylaniline, p-ethylaniline, sodium hydroquinonesulfonate, potassium hydroquinonesulfonate, gallic acid, pyrogallol-4-carboxylic acid, Pyrogallol-4,6-dicarboxylic acid, pyrogallol monomethyl ether and the like can be used. Among these, hydroquinone, methylhydroquinone, pyrogallol, sodium hydroquinonesulfonate, potassium hydroquinonesulfonate, and the like are more preferable. However, it is not limited to the above components.

また、使用できるアスコルビン酸化合物としてはアスコルビン酸ナトリウム、アスコルビン酸カリウム、アスコルビン酸アンモニウム、イソアスコルビン酸ナトリウム、イソアスコルビン酸カリウム、イソアスコルビン酸アンモニウム等が使用できる。   Examples of the ascorbic acid compound that can be used include sodium ascorbate, potassium ascorbate, ammonium ascorbate, sodium isoascorbate, potassium isoascorbate, and ammonium isoascorbate.

更に、ヒドラジン化合物としてはヒドラジン水和物、塩酸ヒドラジン、硫酸ヒドラジン及び一塩化ヒドラジン及び二塩化ヒドラジン等が使用できる。また、チオ尿素化合物類としてはN−メチルチオ尿素、1−アセチルチオ尿素、1,3−ジメチルチオ尿素、エチレンチオ尿素等が挙げられる。   Further, as the hydrazine compound, hydrazine hydrate, hydrazine hydrochloride, hydrazine sulfate, hydrazine monochloride, hydrazine dichloride and the like can be used. Examples of thiourea compounds include N-methylthiourea, 1-acetylthiourea, 1,3-dimethylthiourea, and ethylenethiourea.

これらアスコルビン酸化合物、ヒドラジン化合物、チオ尿素化合物を列記したが、これら上記成分に必ずしも限定されるものではない。これら、還元剤成分は0.5〜100g/Lの範囲とすることが好ましい。この還元剤量が0.5g/L未満であると置換金めっき皮膜の表面を十分に還元することができない。また、添加量が100g/Lを超えると、水洗工程が無いため、無電解金めっき液中に持ち込まれ、還元剤濃度を変化させてしまい、液安定性を低下させてしまう可能性がある。更に2〜50g/Lの範囲がより好ましく、5〜20g/Lが特に好ましい。   Although these ascorbic acid compounds, hydrazine compounds, and thiourea compounds are listed, they are not necessarily limited to these components. These reducing agent components are preferably in the range of 0.5 to 100 g / L. If the amount of the reducing agent is less than 0.5 g / L, the surface of the displacement gold plating film cannot be sufficiently reduced. On the other hand, if the addition amount exceeds 100 g / L, there is no washing step, so that it is brought into the electroless gold plating solution, changing the reducing agent concentration and possibly reducing the solution stability. Furthermore, the range of 2-50 g / L is more preferable, and 5-20 g / L is especially preferable.

(pH)
本発明の還元型無電解金めっき用前処理液のpHは、4〜10の範囲で使用することが好ましい。pHが4未満で使用した場合、還元剤成分の安定剤である亜硫酸ナトリウムやチオ硫酸ナトリウムが酸化されて、硫酸に変化してしまい効果が減少してしまうためである。また、pHを10超で使用する場合、弱アルカリ性であるため電子部品のレジスト等を痛め易くなるためである。
また、pHの調整の際には特に限定しないが、酸性に調整する場合は塩酸や硫酸、硝酸等の無機酸類やクエン酸、コハク酸、リンゴ酸等の有機酸を薄めた溶液で調整することができる。また、アルカリ性に調整する場合は水酸化ナトリウム、水酸化カリウム、アンモニア溶液等を使用可能である。これらの液もある程度薄めて使用することが好ましい。
(PH)
The pH of the pretreatment liquid for reducing electroless gold plating of the present invention is preferably used in the range of 4-10. This is because, when the pH is less than 4, sodium sulfite or sodium thiosulfate, which is a stabilizer of the reducing agent component, is oxidized to change into sulfuric acid and the effect is reduced. In addition, when the pH is used above 10, it is weakly alkaline, so that it easily damages the resist of electronic parts.
In addition, there is no particular limitation when adjusting the pH, but when adjusting to acidic, adjust with a dilute solution of inorganic acids such as hydrochloric acid, sulfuric acid and nitric acid, and organic acids such as citric acid, succinic acid and malic acid. Can do. Moreover, when adjusting to alkalinity, sodium hydroxide, potassium hydroxide, ammonia solution, etc. can be used. It is preferable to dilute these solutions to some extent.

(pH緩衝剤類)
本発明の還元型無電解金めっき用前処理液にはpH緩衝剤を添加すると好ましい。使用できるpH緩衝剤は特に限定されるものではないが、クエン酸、コハク酸、リンゴ酸、酒石酸等の有機酸類やエチレンジアミンやEDTA、ポリアミンカルボン酸、塩化アンモン等の水溶性アミン類、リン酸類、四ホウ酸ナトリウム等のホウ酸類も使用できる。使用濃度は10〜100g/Lの範囲で使用できる。10g/L未満であると、pH緩衝作用が少なく安定して長期間処理液を使用できない可能性がある。また、100g/Lを超えると塩濃度が高くなり、液中に再結晶化してしまう可能性がある。好適には20〜50g/Lで使用することが好ましい。
(PH buffers)
It is preferable to add a pH buffer to the pretreatment solution for reducing electroless gold plating of the present invention. The pH buffer that can be used is not particularly limited, but organic acids such as citric acid, succinic acid, malic acid and tartaric acid, water-soluble amines such as ethylenediamine, EDTA, polyaminecarboxylic acid, and ammonium chloride, phosphoric acids, Boric acids such as sodium tetraborate can also be used. The working concentration can be used in the range of 10 to 100 g / L. If it is less than 10 g / L, there is a possibility that the pH buffering action is small and the treatment liquid cannot be used stably for a long time. Moreover, when it exceeds 100 g / L, salt concentration will become high and there exists a possibility of recrystallizing in a liquid. It is preferably used at 20 to 50 g / L.

(めっき方法)
本発明では、プリント配線板の微細回路やスルーホールパット部分、ランド及びその他の電子部品接触部分、半導体パッケージのワイヤーボンディング端子、はんだボール接続部分や各種電子部品の端子部分を被めっき物とするのが好ましい。
また、本発明の還元型無電解金めっき用前処理液の使用方法は、まず、置換金めっきを形成した被めっき物に、本発明に記載されている還元型無電解金めっき用前処理液に被めっき物を接触させる。その後、水洗工程を行わない状態で、そのまま無電解金めっき液に浸漬する。水洗工程を行った場合、微小パット部分が再酸化されてしまい、微小部分に無電解金めっきが析出しない恐れがあるためである。
(Plating method)
In the present invention, the fine circuit of the printed wiring board, the through hole pad portion, the land and other electronic component contact portion, the wire bonding terminal of the semiconductor package, the solder ball connection portion and the terminal portion of various electronic components are to be plated. Is preferred.
In addition, the method of using the pretreatment liquid for reducing electroless gold plating of the present invention is as follows. First, the pretreatment liquid for reducing electroless gold plating described in the present invention is applied to the object to be plated on which the replacement gold plating is formed. The object to be plated is brought into contact with. Then, it is immersed in an electroless gold plating solution as it is without performing the water washing step. This is because when the water washing process is performed, the minute pad portion is reoxidized, and the electroless gold plating may not be deposited on the minute portion.

本発明の還元型無電解金めっき用前処理液は室温(25℃)〜90℃の範囲で使用できるが、25〜70℃で使用することが更に好適である。また、無電解金めっき液の使用温度に合わせると、めっき時の温度変化が最小限で済み更に好適である。本発明の還元型無電解金めっき用前処理液の処理時間は特に限定されるものではないが、通常30秒〜10分であり、好ましくは1〜5分が好適である。   The pretreatment liquid for reducing electroless gold plating of the present invention can be used in the range of room temperature (25 ° C.) to 90 ° C., but is more preferably used at 25 to 70 ° C. Further, when the temperature is adjusted to the operating temperature of the electroless gold plating solution, the temperature change at the time of plating is minimized, which is more preferable. Although the processing time of the pretreatment liquid for reducing electroless gold plating of the present invention is not particularly limited, it is usually 30 seconds to 10 minutes, preferably 1 to 5 minutes.

(実験用試料の作製)
パット径50μm、ピッチ100μmのエリアアレイ状に形成された、5cm×5cm×1.0mmの独立した銅配線パットが形成されたBGA基板と比較用の銅板(2cm×2cm、板厚0.7mm)を使用した。このBGA基板と銅板に、一般的に独立回路基板専用の処理で使用されている無電解ニッケルめっき(中リン:5〜8%)を用いて、無電解ニッケルめっきを約5μm施した後、水洗し、更に一般的なプリント基板用置換金めっきを施し、無電解ニッケル上に置換金皮膜を0.05μm施した。その後、下記表1に示す各種還元型無電解金めっき用前処理液に浸漬した後、水洗工程を行わないで下記表1に示す無電解金めっき液に浸漬した。
(Preparation of experimental samples)
A BGA substrate with a 5 cm × 5 cm × 1.0 mm independent copper wiring pad formed in an area array with a pad diameter of 50 μm and a pitch of 100 μm, and a comparative copper plate (2 cm × 2 cm, thickness 0.7 mm) It was used. After applying electroless nickel plating to this BGA substrate and copper plate with electroless nickel plating (medium phosphorus: 5 to 8%) generally used for processing exclusively for independent circuit boards, washing with water Further, general substitution gold plating for printed circuit boards was applied, and a substitution gold film was applied to electroless nickel by 0.05 μm. Then, after immersing in various pretreatment liquids for reduction type electroless gold plating shown in the following Table 1, it was immersed in the electroless gold plating liquid shown in the following Table 1 without performing a water washing process.

(評価)
BGA基板及び銅板の評価は、金属顕微鏡で目視観察をし、更に、蛍光X線膜厚計を用いて膜厚を測定した。また50μmパット部分は、20ヶ所測定して、一番薄い部分を比較することにより、前処理液の効果を確認した。
(Evaluation)
The BGA substrate and the copper plate were evaluated by visual observation with a metal microscope, and the film thickness was measured using a fluorescent X-ray film thickness meter. In addition, the 50 μm pad portion was measured at 20 locations, and the effect of the pretreatment liquid was confirmed by comparing the thinnest portion.

(実施例1〜4)
表1に実施例1〜4を示す。
実施例1は還元剤にフェニル化合物としてヒドロキノンを使用した。
実施例2は還元剤にアスコルビン酸ナトリウム、実施例3には硫酸ヒドラジン、実施例4にはチオ尿素を使用した。還元型無電解金めっき用前処理液には無電解金めっきのpHが液の持ち込みにより大きく変動しないように、塩酸を用いて7.5に調整して使用した。処理温度も基板表面の温度が大きく変動しないように、無電解金めっきとほぼ同じ65℃で使用した、また処理時間は5分とした。
(Examples 1-4)
Table 1 shows Examples 1 to 4.
In Example 1, hydroquinone was used as a reducing agent as a phenyl compound.
In Example 2, sodium ascorbate was used as the reducing agent, hydrazine sulfate was used in Example 3, and thiourea was used in Example 4. The pretreatment liquid for reduction-type electroless gold plating was adjusted to 7.5 with hydrochloric acid so that the pH of the electroless gold plating would not change greatly due to the introduction of the liquid. The treatment temperature was also used at 65 ° C., which was almost the same as the electroless gold plating, so that the substrate surface temperature did not vary greatly, and the treatment time was 5 minutes.

表1の実施例1〜4の評価結果に示すように、還元型無電解金めっき用前処理液に浸漬した後、水洗工程を行わないで各種無電解金めっきを行った結果、比較のため同様に処理した銅板とパット系50μmの孤立パターンとは、ほぼ同じ膜厚で金が析出できることが分かった。また還元型無電解金めっき用前処理液の保存安定性(室温(25℃)及び65℃で1週間)も良好で、液が分解していないことが分かった。また、使用した無電解金めっき液の安定性も損なわれず。良好な結果となった。   As shown in the evaluation results of Examples 1 to 4 in Table 1, after immersion in the pretreatment liquid for reducing electroless gold plating, the results of various electroless gold plating without performing the water washing step are for comparison. It was found that gold can be deposited with substantially the same film thickness on the copper plate treated in the same manner and the isolated pattern of the pad type 50 μm. Moreover, it was found that the storage stability (room temperature (25 ° C.) and 65 ° C. for 1 week) of the pretreatment liquid for reducing electroless gold plating was good, and the liquid was not decomposed. In addition, the stability of the electroless gold plating solution used is not impaired. Good results.

(比較例1〜4)
表1に比較例1〜4に示す。比較例では、処理液中に含まれる還元剤を安定化させるための添加剤として亜硫酸ナトリウム及びチオ硫酸ナトリウムを添加しない条件で還元型無電解金めっき用前処理液を調合した。
(Comparative Examples 1-4)
Table 1 shows Comparative Examples 1 to 4. In the comparative example, a pretreatment liquid for reducing electroless gold plating was prepared under the condition that sodium sulfite and sodium thiosulfate were not added as additives for stabilizing the reducing agent contained in the treatment liquid.

Figure 2010100895
Figure 2010100895

比較例1ではフェニル化合物系還元剤であるヒドロキノンを溶解した所、液は褐色に濁り始めた。この液は温度を65℃にしても褐色のままで、沈殿物が生成した。また、実施例2のアスコルビン酸ナトリウムも、溶解初期は透明だったものの、液温を65℃にした場合や、常温(25℃)で保存していると前処理液が濃い黄色に変化することがわかった。アスコルビン酸ナトリウムについては沈殿物が発生しなかった。   In Comparative Example 1, when hydroquinone, which is a phenyl compound-based reducing agent, was dissolved, the liquid began to turn brown. This solution remained brown even when the temperature was 65 ° C., and a precipitate was formed. Moreover, although the sodium ascorbate of Example 2 was transparent at the beginning of dissolution, the pretreatment liquid changed to a deep yellow when the liquid temperature was 65 ° C. or when stored at room temperature (25 ° C.). I understood. No precipitate was generated for sodium ascorbate.

一方、実施例3の硫酸ヒドラジンは均一に溶解した。また、常温(25℃)、65℃で保存しても液に変化は見られなかった。
実施例4のチオ尿素は、初期は溶解したものの時間が経過するに従って、液が白色に濁ってしまった。更に、常温(25℃)で保存や温度を65℃にすると沈殿物が発生した。これらの薬液を還元型無電解金めっき用前処理に用いて、水洗工程を行わないで表1に示す無電解金めっきを行った。
その結果、比較例1のヒドロキノン、比較例2のアスコルビン酸ナトリウム、比較例3の硫酸ヒドラジン、比較例4のチオ尿素ともに銅板上での析出は正常であったが、50μmパット部分では析出速度が若干上昇したものの、正常な銅板と比較して、約1/4しか金膜厚を得ることができなかった。
また、液に沈殿や濁りの発生しなかった比較例3の硫酸ヒドラジンも微小パット部分では析出し難いことが分かった。これは、沈殿物は生成されなかったものの、硫酸ヒドラジンの加水分解が発生して、微小パット部分の活性効果が低くなってしまったものと推定される。
On the other hand, hydrazine sulfate of Example 3 was uniformly dissolved. Moreover, even if it preserve | saved at normal temperature (25 degreeC) and 65 degreeC, the change was not seen by the liquid.
Although the thiourea of Example 4 was initially dissolved, the liquid became cloudy as time passed. Furthermore, when it preserve | saved at normal temperature (25 degreeC) and temperature was 65 degreeC, the deposit generate | occur | produced. These chemical solutions were used for pretreatment for reduced electroless gold plating, and electroless gold plating shown in Table 1 was performed without performing a water washing step.
As a result, although the hydroquinone of Comparative Example 1, the sodium ascorbate of Comparative Example 2, the hydrazine sulfate of Comparative Example 3 and the thiourea of Comparative Example 4 were normally deposited on the copper plate, the deposition rate was 50 μm in the pad portion. Although it rose a little, compared with a normal copper plate, only about 1/4 was able to obtain a gold film thickness.
Moreover, it turned out that the hydrazine sulfate of the comparative example 3 by which neither precipitation nor turbidity generate | occur | produced in the liquid was difficult to precipitate in a micro pad part. This is presumed that, although no precipitate was produced, hydrolysis of hydrazine sulfate occurred, and the activity effect of the fine pad portion was lowered.

本発明の還元型無電解金めっき用前処理液を使用することによって、電子部品の孤立したワイヤーボンディングパットやフリップチップ用のパットに均一な無電解金めっきを均一に施すことが可能となる。
従って、置換金めっき後これら処理液で処理を行い、水洗工程を行わないでそのまま無電解金めっきで処理することにより、微小で独立したパット部分へのめっきを安定して確保でき、プリント基板やパッケージ基板、半導体などの電子部品の更なる小型化、高性能化が可能となる。
By using the pretreatment liquid for reducing electroless gold plating of the present invention, uniform electroless gold plating can be uniformly applied to isolated wire bonding pads and flip chip pads of electronic components.
Therefore, by performing treatment with these treatment liquids after substitution gold plating, and performing the treatment with electroless gold plating as it is without performing a water washing step, it is possible to stably secure plating on a minute and independent pad portion, Electronic components such as package substrates and semiconductors can be further reduced in size and performance.

Claims (3)

亜硫酸及びその塩からなる群より選ばれた少なくとも1種類の成分と、チオ硫酸及びその塩からなる群より選ばれた少なくとも1種類の成分とを単独もしくは両方を含んだ水溶液に、フェニル化合物、アスコルビン酸化合物、ヒドラジン化合物、チオ尿素化合物から選ばれた1種類以上の成分を配合して成ることを特徴とする還元型無電解金めっき用前処理液。   An aqueous solution containing at least one component selected from the group consisting of sulfurous acid and its salt and at least one component selected from the group consisting of thiosulfuric acid and its salt, alone or both, in a phenyl compound, ascorbine A pretreatment solution for reducing electroless gold plating, comprising one or more components selected from an acid compound, a hydrazine compound, and a thiourea compound. pHが4〜10であることを特徴とする請求項1に記載の還元型無電解金めっき用前処理液。   The pretreatment liquid for reducing electroless gold plating according to claim 1, wherein the pH is 4 to 10. 置換金めっきが施された被めっき物を、請求項1または2に記載の還元型無電解金めっき用前処理液に浸漬させた後、水洗工程を行わないで直接、還元型無電解金めっき液に浸漬することを特徴とする無電解金めっき方法。   After the object to be plated with the displacement gold plating is immersed in the pretreatment liquid for reducing electroless gold plating according to claim 1 or 2, the reducing electroless gold plating is directly performed without performing a washing step. An electroless gold plating method characterized by immersing in a liquid.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013047385A (en) * 2011-08-17 2013-03-07 Rohm & Haas Electronic Materials Llc Stable catalyst for electroless metallization
JP2014019885A (en) * 2012-07-13 2014-02-03 Kanto Gakuin Non-cyanogen electroless gold plating bath
CN104470236A (en) * 2013-09-16 2015-03-25 深圳市兴经纬科技开发有限公司 Post-immersing liquid of circuit board electroless nickel immersion gold and post-immersing method
CN114164422A (en) * 2016-05-12 2022-03-11 上村工业株式会社 Method for maintaining and managing plating capability of electroless gold plating bath

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JP2003293145A (en) * 2002-04-03 2003-10-15 Okuno Chem Ind Co Ltd Activating liquid for electroless gold plating and electroless plating method
JP2004332037A (en) * 2003-05-06 2004-11-25 Hitachi Chem Co Ltd Electroless gold plating method
JP2006002196A (en) * 2004-06-16 2006-01-05 Okuno Chem Ind Co Ltd Activating composition for pretreatment of displacing-precipitation-type gold plating

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JP2003293145A (en) * 2002-04-03 2003-10-15 Okuno Chem Ind Co Ltd Activating liquid for electroless gold plating and electroless plating method
JP2004332037A (en) * 2003-05-06 2004-11-25 Hitachi Chem Co Ltd Electroless gold plating method
JP2006002196A (en) * 2004-06-16 2006-01-05 Okuno Chem Ind Co Ltd Activating composition for pretreatment of displacing-precipitation-type gold plating

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013047385A (en) * 2011-08-17 2013-03-07 Rohm & Haas Electronic Materials Llc Stable catalyst for electroless metallization
JP2014019885A (en) * 2012-07-13 2014-02-03 Kanto Gakuin Non-cyanogen electroless gold plating bath
CN104470236A (en) * 2013-09-16 2015-03-25 深圳市兴经纬科技开发有限公司 Post-immersing liquid of circuit board electroless nickel immersion gold and post-immersing method
CN114164422A (en) * 2016-05-12 2022-03-11 上村工业株式会社 Method for maintaining and managing plating capability of electroless gold plating bath

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