JP2010087263A - Nonvolatile semiconductor storage device and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device that reduces a voltage applied to an inter-poly insulating film by increasing a capacity coupling rate on an active area in a dummy cell region, and prevents wire breaking of a control gate caused by a hollow of the control gate on an element isolation region, and to provide a method of manufacturing the nonvolatile semiconductor storage device. <P>SOLUTION: Outside a memory cell region 110 where line-and-space (L&S) periodicity of an active area D1 and an element isolation region D1S is disordered, active areas D2a and D2b wider than the active area D1, and an element isolation region D2S disposed between the active areas D2a and D2b are formed. An upper surface of the element isolation region D2S is formed lower than an upper surface of a floating gate 12B from an end of the floating gate 12B halfway to the width of the element isolation region D2S, and formed in level with the upper surface of the floating gate 12C from to halfway the end of the floating gate 12C. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a nonvolatile semiconductor memory device and a method for manufacturing the same, for example, a dummy cell having an active area and an element isolation region wider than the active area and the element isolation region in the memory cell region outside the memory cell region. The present invention relates to a nonvolatile semiconductor memory device having a region and a manufacturing method thereof.

  The nonvolatile semiconductor memory device includes a cell array region and a peripheral circuit region provided on the outer periphery thereof, and the cell array region includes a memory cell region and a dummy cell region provided on the outer periphery thereof. The memory cell region is a region where a plurality of memory cells are arranged in a matrix, and an active area and an element isolation region are regions formed with a line-and-space (L & S) periodicity. The dummy cell region is disposed on the outer periphery of the memory cell region where the L & S periodicity in the memory cell region is lost, and is a region provided to ensure a necessary lithography margin.

  In the dummy cell region disposed outside the memory cell region, there are an active area and an element isolation region that are wider than the active area and the element isolation region in the memory cell region. When the upper surface of the element isolation region between the active areas of the dummy cell region is at the same height as the upper surface of the floating gate, the capacitance between the control gate electrode (CG) and the floating gate electrode is reduced, and the coupling ratio is reduced. Therefore, the coupling ratio on the active area having a large width in the dummy cell region is smaller than the coupling ratio on the active area in the memory cell region.

  When a high program voltage is applied to the word line WL of the control gate electrode, the interpoly insulating film (the control gate electrode and the floating gate is calculated on the active area having a small coupling ratio and a wide width by calculation of capacitance distribution. The voltage applied to the inter-gate insulating film between the electrodes increases. For this reason, when the thickness of the interpoly insulating film is reduced to facilitate writing, the voltage applied to the interpoly insulating film exceeds the withstand voltage of the interpoly insulating film, and the interpoly insulating film is destroyed, There is a risk of failure.

  The relationship between the width of the active area and the voltage and electric field applied to the interpoly insulating film is applied to the interpoly insulating film as the active area width of the memory cell region becomes 1F and becomes wider as 2F, 3F,. The voltage increases. That is, as the active area width increases, the possibility that the interpoly insulating film is broken and becomes defective increases. Once the interpoly insulating film is destroyed, the control gate electrode and the substrate are short-circuited, so that no writing voltage is applied, and writing to the memory cell having the interpoly insulating film that has caused the destruction becomes impossible. .

On the other hand, for example, Patent Document 1 describes a structure in which the entire width of the upper surface of the element isolation region between the active areas in the dummy cell region is lower than the upper surface of the floating gate. With such a structure, the capacitance between the control gate and the floating gate can be increased and the coupling ratio can be increased. Thereby, the voltage applied to the interpoly insulating film can be reduced to prevent the interpoly insulating film from being destroyed. However, in the case where the entire width of the upper surface of the element isolation region is made lower than the upper surface of the floating gate, when a polysilicon film serving as a control gate is deposited on this structure, a depression is generated in the polysilicon film, The mask material for processing the control gate formed in the step is buried in the recess. If the mask material remains in the recess of the polysilicon film in this manner, the salicide process is not performed on the remaining portion of the mask material in the subsequent salicide process of the polysilicon film. Therefore, when the mask material is etched, There is a problem that a disconnection occurs and it becomes defective.
JP 2006-344900 A

  In the dummy cell region, the capacitance coupling ratio on the active area can be increased to reduce the voltage applied to the interpoly insulating film, and the disconnection of the control gate caused by the depression of the control gate on the element isolation region can be prevented. A non-volatile semiconductor memory device and a method for manufacturing the same are provided.

  A nonvolatile semiconductor memory device according to an embodiment of the present invention includes a plurality of first active areas and first element isolation regions formed on a semiconductor substrate with line-and-space periodicity, and the first A first gate insulating film formed on the active area; a first floating gate formed on the first gate insulating film; the plurality of first active areas on the semiconductor substrate; Formed outside the first element isolation region and formed between the second and third active areas, which are wider than the first active area, and between the second and third active areas. And a second element isolation region formed on the second element isolation region having a width wider than that of the first element isolation region and the second active area and having the same film thickness as the first gate insulating film. A third gate insulating film formed on the third active area and thicker than the first gate insulating film; and a second floating gate formed on the second gate insulating film. A film, a third floating gate formed on the third gate insulating film, the first, second, and third floating gates, and the first and second element isolation regions. An inter-gate insulating film and a control gate formed on the inter-gate insulating film, and the upper surface of the second element isolation region extends from the end of the second floating gate to the second element. It is formed lower than the upper surface of the second floating gate to the middle of the width of the isolation region, and is formed at the same height as the upper surface of the third floating gate from the middle to the end of the third floating gate. It is characterized by that.

  According to another aspect of the present invention, there is provided a method for manufacturing a nonvolatile semiconductor memory device, wherein a plurality of first active areas and first element isolation regions having line-and-space periodicity are formed on a semiconductor substrate. Second and third active areas having a width wider than the first active area are formed outside the plurality of the first active areas and the first element isolation region on the semiconductor substrate, and the second active areas are formed. Forming a second element isolation region wider than the first element isolation region between the active area and the third active area, and on the first, second, and third active areas Forming first, second, and third gate insulating films respectively, and forming first, second, and third floating gates on the first, second, and third gate insulating films, respectively. Process, and The upper surface of the second element isolation region is formed lower than the upper surface of the second floating gate from the end of the second floating gate to the middle of the width of the second element isolation region. Forming the same height as the upper surface of the third floating gate up to the end of the floating gate, and between the gates on the first and second floating gates and on the first and second element isolation regions A step of forming an insulating film; and a step of forming a control gate on the inter-gate insulating film.

  According to the present invention, in the dummy cell region, the capacitance coupling ratio on the active area can be increased to reduce the voltage applied to the interpoly insulating film, and the control gate is disconnected due to the depression of the control gate on the element isolation region. It is possible to provide a nonvolatile semiconductor memory device and a method for manufacturing the same.

  Hereinafter, a nonvolatile semiconductor memory device according to an embodiment of the present invention will be described. Here, a NAND flash memory is taken as an example of the nonvolatile semiconductor memory device. In the description, common parts are denoted by common reference symbols throughout the drawings.

  FIG. 1 is a layout diagram showing an outline of a NAND flash memory according to an embodiment of the present invention.

  As shown in FIG. 1, the NAND flash memory includes a cell array region 100 and a peripheral circuit region 200 provided on the outer periphery thereof. The cell array region 100 includes a memory cell region 110 and a dummy cell region 120 provided on the outer periphery thereof.

  The memory cell region 110 is a region in which a plurality of memory cells are arranged in a matrix, and an active area and an element isolation region are formed with a line-and-space (L & S) periodicity. An active area in the memory cell region 110 is formed with a minimum processing dimension.

  The dummy cell region 120 is disposed on the outer periphery of the memory cell region 110 in which the L & S periodicity in the memory cell region 110 is lost, and is provided for securing a necessary lithography margin. Therefore, the dummy cell region 120 has an active area and an element isolation region that are wider than the active area and the element isolation region in the memory cell region 110. The active area and the element isolation region in the dummy cell region 120 are also formed with L & S periodicity, but the dummy cell region 120 has an active area formed with a size larger than the minimum processing size. If such a dummy cell region 120 does not exist, the active area at the end of the memory cell region 110 cannot be formed with a minimum processing dimension because of the lithography margin. Arbitrary data cannot be written in the dummy cell area 120.

  Next, a detailed layout of the memory cell region 110 and the dummy cell region 120 will be described. FIG. 2 is a plan view showing a layout in a region surrounded by a broken line in FIG.

  The memory cell region 110 includes a plurality of line-shaped active areas M1. The width and interval (element isolation region) M1S of these active areas M1 are minimum processing dimensions.

  The dummy cell region 120 includes a plurality of active areas D1, D2a, D2b, and D3. The width of the active area D1 is the minimum processing dimension. The widths of the active areas D2a, D2b, and D3 are larger than the minimum processing size, and the width of the active area D3 is wider than the widths of the active areas D2a and D2b. That is, the relationship between the widths of the active areas D1, D2a, D2b, and D3 is such that the width of the active area D1 <the width of the active areas D2a and D2b <the width of the active area D3. The width of each active area D1, D2a, D2b, D3 is set in relation to the lithography margin.

  On the active areas M1, D1, D2a, D2b, and D3 in the memory cell region 110 and the dummy cell region 120, a word line WL is formed. The word line WL is integrated with the control gate electrode in the memory cell region 110 and the dummy cell region 120.

  In some cases, an active area D3, D1, D1, D2b (not shown) may continue in the dummy cell area 120 on the right side of the area AR in FIG. That is, a plurality of active areas having a mirror image relationship with a plurality of active areas in the region AR may be arranged in a region separated from the region AR by a certain distance. In FIG. 2, a region P <b> 1 indicates an active area in the peripheral circuit region 200.

  3A is a plan view of a part of the region AS in FIG. 2, and FIG. 3B is a cross-sectional view taken along line 3b-3b in FIG.

  In the dummy cell region 120 adjacent to the memory cell region 110, the active area D1 and the element isolation region D1S are formed with the same L & S periodicity as the active area M1 and the element isolation region M1S in the memory cell region 110. ing. Outside these active area D1 and element isolation region D1S, active areas D2a and D2b wider than active area D1 are arranged. An element isolation region D2S wider than the element isolation region D1S is formed between the active areas D2a and D2b.

  A tunnel gate insulating film 11A is formed on the active area D1, and a floating gate 12A is formed on the tunnel gate insulating film 11A. A tunnel gate insulating film 11B is formed on the active area D2a adjacent to the outside of the active area D1, and a floating gate 12B is formed on the tunnel gate insulating film 11B.

  The active area D2b adjacent to the outside of the active area D2a has a lower upper surface than the active area D2a and the active area D1. On the active area D2b, a gate insulating film 13A thicker than the tunnel gate insulating films 11A and 11B is formed. A floating gate 12C is formed on the gate insulating film 13A.

  The upper surface of the element isolation region D2S between the active areas D2a and D2b is formed lower than the upper surfaces of the floating gates 12B and 12C from the end of the floating gate 12B to the middle of the width of the element isolation region D2S. The end of 12C is formed at the same height as the upper surfaces of the floating gates 12B and 12C. In other words, the upper surface of the element isolation region D2S is formed to be lower than the upper surface of the floating gate 12B from one end to the middle of the width, and is formed at the same height as the upper surface of the floating gate 12C from the middle to the other end. . Furthermore, the upper surface of the element isolation region D1S between the active areas D1 and between the active area D1 and the active area D2a is formed lower than the upper surfaces of the floating gates 12A and 12B.

  An interpoly insulating film 14 is formed on the element isolation regions D1S and D2S and on the floating gates 12A, 12B, and 12C. A control gate (word line) 15 is formed on the interpoly insulating film 14.

  Next, a method for manufacturing the NAND flash memory according to the embodiment will be described. 4 to 10 are cross-sectional views of the respective steps showing the method for manufacturing the NAND flash memory.

  As shown in FIG. 4, a tunnel gate insulating film (for example, silicon oxide film) 11 and a high-voltage transistor gate insulating film (for example, silicon oxide film) 13 are formed on the silicon semiconductor substrate 10. The region of the semiconductor substrate 10 on which the gate insulating film 13 is formed is tunneled between the gate insulating film 13 and the tunnel by lithography and RIE (Reactive Ion Etching) in order to reduce the level difference after the polysilicon film 15 to be the control gate is formed. The surface of the semiconductor substrate 10 is etched by a difference in film thickness from the gate insulating film 11 to lower the surface position of the semiconductor substrate 10.

  Next, as shown in FIG. 5, a polysilicon film 12 serving as a floating gate is formed on the tunnel gate insulating film 11 and the gate insulating film 13 to a film thickness of 60 to 90 nm. Thereafter, on the polysilicon film 12, for example, a silicon nitride film 16 serving as a mask material for forming an active area and an element isolation region is formed to several tens of nm.

  Thereafter, as shown in FIG. 6, an active area and an element isolation region are formed. More specifically, the resist is left on the active area by lithography, and the element isolation region is opened. Subsequently, the silicon nitride film 16, the polysilicon film 12, the tunnel gate insulating film 11, the gate insulating film 13, and the semiconductor substrate 10 in the resist opening are etched to dig a groove in the semiconductor substrate 10. An oxide film 17 is deposited in the trench and on the semiconductor substrate 10. Thereafter, as shown in FIG. 7, the oxide film 17 on the semiconductor substrate 10 is polished and planarized by CMP (Chemical Mechanical Polish) to the silicon nitride film 16 on the floating gate.

  Next, the upper surface of the element isolation region D2S is formed to be lower than the upper surfaces of the floating gates 12B and 12C from the end of the floating gate 12B to the middle of the width of the element isolation region D2S, and floats from the middle to the end of the floating gate 12C. It is formed at the same height as the upper surfaces of the gates 12B and 12C. First, as shown in FIG. 8, a resist 18 is formed on the floating gate 12C side from the middle of the width of the element isolation region D2S by lithography on the structure shown in FIG. Subsequently, etching is performed by RIE to remove the element isolation region D1S and the region from the end of the floating gate 12B of the element isolation region D2S to the middle of the width of the element isolation region D2S, as shown in FIG. At this time, the depth for etching the element isolation region D2S is set to a height of several tens of nanometers from the interface between the active area D2a and the tunnel gate insulating film 11B.

  Next, as shown in FIG. 10, an interpoly insulating film 14 is formed on the structure shown in FIG. 9, that is, on the floating gates 12A, 12B, 12C and the element isolation regions D1S, D2S. To do. Thereafter, a polysilicon film to be the control gate (word line) 15 is formed on the interpoly insulating film 14. As described above, the NAND flash memory according to the embodiment is manufactured.

  In the embodiment having the above-described structure, the element isolation region D2S between the active areas D2a and D2b arranged outside the memory cell region 110 where the line and space (L & S) periodicity of the active area D1 and the element isolation region D1S collapses. Is formed to be lower than the upper surface of the floating gate 12B from the end of the floating gate 12B to the middle of the width of the element isolation region D2S, and to the same height as the upper surface of the floating gate 12C from the middle to the end of the floating gate 12C. Forming. That is, a recess is formed in a part of the upper surface of the element isolation region D2S between the active areas D2a and D2b arranged in the dummy cell region 120 where the L & S periodicity outside the memory cell region 110 is broken. This increases the capacitance between the control gate and the floating gate and increases the coupling ratio, so that the voltage applied to the interpoly insulating film can be reduced. As a result, it is possible to prevent the occurrence of a defect that the interpoly insulating film is destroyed.

  Since a gate insulating film 13A for a high breakdown voltage transistor having a thickness larger than that of the tunnel gate insulating film 11B is formed between the floating gate 12C and the active area D2b, an interface between the control gate 15 and the floating gate 12C is formed. Even if the poly insulating film 14 is destroyed, there is no short circuit between the control gate 15 and the active area D2b. Therefore, there is no need to form a recess in the element isolation region disposed adjacent to the active area D2b.

  Further, as described above, the upper surface of the element isolation region D2S is formed to be lower than the upper surface of the floating gate 12B from the end of the floating gate 12B to the middle of the width of the element isolation region D2S. Even if the control gate 15 made of a silicon film is formed, no depression is generated in the control gate 15, and a mask material for processing the control gate formed on the control gate is not buried in the depression. For this reason, in the subsequent salicide process of the polysilicon film, when the mask material is etched, disconnection of the control gate line does not occur and no defect is caused.

  Moreover, it is preferable that the length L (L in FIG. 3) of the recessed part formed in the upper surface of the element isolation region D2S is in the following range.

  When the length L of the recess is short, after processing the control gate, an etching residue may occur between the control gates on the side walls of the active area, and the control gates may be short-circuited. Therefore, it is necessary to ensure the length L so that no etching residue occurs. At least the length L1 of the element isolation region in the memory cell region is required. The length L1 is a minimum processing dimension formed with an L & S periodicity of the memory cell region.

  On the other hand, when the length L of the dent is long, the following occurs. After forming the polysilicon film to be the control gate, a mask material for processing the control gate is formed. However, if the length L is long, the polysilicon film is not formed flat and a depression is generated, and the depression is formed in the depression. Mask material will be embedded. If the mask material is left in this way, the side portion of the mask material is not side-sided in the subsequent salicide process of the polysilicon film. Therefore, when the mask material is etched, the control gate (word line) is disconnected. Occurs and becomes defective. In order not to be defective, it is necessary to prevent the remaining mask material from occurring. For this purpose, the polysilicon film serving as the control gate is prevented from being recessed. Since the polysilicon film is formed isotropically, it is possible to take measures if the relationship of L ≦ 2T is satisfied, where T is the thickness of the polysilicon film. Therefore, the maximum value of the length L is up to twice the film thickness of the polysilicon film serving as the control gate. As described above, the length L of the recessed portion of the element isolation region D2S is preferably L1 ≦ L ≦ 2T.

  In the above embodiment, the NAND flash memory has been described as an example. However, the present invention can be applied to a memory in which a memory cell has a stacked gate structure, for example, a NOR type memory.

  The embodiment described above is not the only embodiment, and various embodiments can be formed by changing the configuration or adding various configurations.

1 is a layout diagram showing an overview of a NAND flash memory according to an embodiment of the present invention. It is a top view which shows the layout in the area | region enclosed with the broken line in FIG. FIG. 3 is a plan view and a cross-sectional view of a part of a region AS in FIG. It is sectional drawing of the 1st process which shows the manufacturing method of the NAND type flash memory of embodiment. It is sectional drawing of the 2nd process which shows the manufacturing method of the NAND type flash memory of embodiment. It is sectional drawing of the 3rd process which shows the manufacturing method of the NAND type flash memory of embodiment. It is sectional drawing of the 4th process which shows the manufacturing method of the NAND type flash memory of embodiment. It is sectional drawing of the 5th process which shows the manufacturing method of the NAND type flash memory of embodiment. It is sectional drawing of the 6th process which shows the manufacturing method of the NAND type flash memory of embodiment. It is sectional drawing of the 7th process which shows the manufacturing method of the NAND type flash memory of embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Silicon semiconductor substrate 11, 11A, 11B ... Tunnel gate insulating film, 12 ... Polysilicon film, 12A, 12B, 12C ... Floating gate, 13, 13A ... Gate insulating film, 14 ... Interpoly insulating film (inter-gate insulation) Film), 15 ... control gate (polysilicon film), 16 ... silicon nitride film, 17 ... oxide film, 18 ... resist, 100 ... cell array region, 110 ... memory cell region, 120 ... dummy cell region, 200 ... peripheral circuit region, AR, AS, P1... Region, D1, D2, D3, D2a, D2b, M1... Active area, D1S, D2S, M1S... Element isolation region, WL.

Claims (5)

A plurality of first active areas and first element isolation regions formed on a semiconductor substrate with line-and-space periodicity;
A first gate insulating film formed on the first active area;
A first floating gate formed on the first gate insulating film;
Second and third active areas formed outside the plurality of first active areas and the first element isolation region on the semiconductor substrate and wider than the first active areas;
A second element isolation region formed between the second active area and the third active area and having a width wider than the first element isolation region;
A second gate insulating film formed on the second active area and having the same film thickness as the first gate insulating film;
A second floating gate formed on the second gate insulating film;
A third gate insulating film formed on the third active area and having a thickness greater than that of the first gate insulating film;
A third floating gate formed on the third gate insulating film;
An intergate insulating film formed on the first, second, and third floating gates and on the first and second element isolation regions;
A control gate formed on the inter-gate insulating film,
The upper surface of the second element isolation region is formed lower than the upper surface of the second floating gate from the end of the second floating gate to the middle of the width of the second element isolation region. A non-volatile semiconductor memory device, characterized in that it is formed at the same height as the upper surface of the third floating gate up to the end of the third floating gate.   The length of the upper surface of the second element isolation region that is lower than the upper surface of the second floating gate is the same length as the width of the first element isolation region disposed between the first active areas. The nonvolatile semiconductor memory device according to claim 1.   The length of the upper surface of the second element isolation region lower than the upper surface of the second floating gate is equal to or greater than the width of the first element isolation region disposed between the first active areas, and the control The nonvolatile semiconductor memory device according to claim 1, wherein the nonvolatile semiconductor memory device is not more than twice the thickness of the gate. Forming a plurality of first active areas and first element isolation regions having a line-and-space periodicity on a semiconductor substrate, and the plurality of the first active areas and the first elements on the semiconductor substrate; Second and third active areas having a width wider than that of the first active area are formed outside the element isolation region, and the first active area is formed between the second active area and the third active area. Forming a second element isolation region wider than the element isolation region;
Forming first, second, and third gate insulating films on the first, second, and third active areas, respectively;
Forming first, second, and third floating gates on the first, second, and third gate insulating films, respectively;
The upper surface of the second element isolation region is formed lower than the upper surface of the second floating gate from the end of the second floating gate to the middle of the width of the second element isolation region. Forming the same height as the upper surface of the third floating gate up to the end of the third floating gate;
Forming an intergate insulating film on the first and second floating gates and on the first and second element isolation regions;
Forming a control gate on the inter-gate insulating film;
A method for manufacturing a nonvolatile semiconductor memory device, comprising:   The length of the upper surface of the second element isolation region lower than the upper surface of the second floating gate is equal to or greater than the width of the first element isolation region disposed between the first active areas, and the control 5. The method for manufacturing a nonvolatile semiconductor memory device according to claim 4, wherein the thickness is less than twice the thickness of the gate.

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