JP2010085225A - Etching defect inspection method of piezoelectric vibrating chip wafer, and inspection system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an etching defect inspection method of a piezoelectric vibration chip wafer, and an inspection system. <P>SOLUTION: Reference light 32 is reflected by a half mirror 24, and the reference light 32 is irradiated vertically to the piezoelectric vibration chip wafer 12 formed by etching, and reflected light 34 of the reference light 32 reflected by the piezoelectric vibration chip wafer 12 and transmitted through the half mirror 24 is photographed, and a domain of low-intensity reflected light 34 in the photographed image is detected as an etching defect 14 formed in the piezoelectric vibration chip wafer 12. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention relates to an etching defect inspection of a piezoelectric vibrating piece wafer, and more particularly to a technique for detecting an etching defect by an optical method.

The piezoelectric vibrating piece is formed of a piezoelectric substrate. Even if the piezoelectric element plate has a slight flaw, the piezoelectric vibrating piece becomes defective. Therefore, detection of a flaw on the piezoelectric element plate is very important.
Up to now, the scratches on the piezoelectric element plate have been visually inspected by an operator with a microscope. However, since they depended on visual inspection, it was very difficult to detect scratches (defects) of several μm or less. In addition, since the work is performed for a long time, it is a burden on the worker. In order to solve such a problem, in Patent Document 1, an illuminating unit that irradiates scattered light at an irradiation angle within a range of ± 30 ° from the circumferential direction of the side surface of an inspection object such as a piezoelectric element plate to the inspection object surface; , An inspection unit having an imaging unit that captures an image from directly above the surface of the object to be inspected, and an image processing device that extracts a feature of a scratch present on the piezoelectric element plate from an image signal captured by the imaging unit and determines the presence of the scratch An apparatus is disclosed. As a result, the reflected light from the scratch existing on the surface of the object to be inspected is emphasized and clearly appears on the image, and the presence of the scratch is determined by image processing, so that the burden on the operator can be reduced.
JP 11-64232 A

  However, although the material of the piezoelectric element plate has etch channel defects extending in the crystal growth direction, it is difficult to detect in the state of the piezoelectric element plate because the diameter is small before etching. Etch channel defects are amorphous glass, and the etching rate in wet etching is higher than that of quartz. Along with the wet etching process such as buffered hydrofluoric acid that forms the piezoelectric vibrating piece wafer, the etch channel defect is etched and the through hole is formed as an etching defect. Since the piezoelectric vibrating piece wafer obtained in this way has an extremely large edge portion, it is difficult to determine etching defects due to scattered light from the edge portion. Such etching defects have been performed by forming an electrode on a piezoelectric vibrating reed wafer to form a piezoelectric vibrating reed and then inspecting the surface state. It was difficult to detect. The piezoelectric vibrating piece having such a through hole has a low bending rigidity, and stress is concentrated in the through hole, which may be easily damaged by an external impact or the like. There is a problem that must be done.

  SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide an etching defect inspection method and inspection system for a piezoelectric vibrating reed wafer that can easily detect an etching defect without burdening an operator, paying attention to the above problems.

SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following application examples.
[Application Example 1] The reference light reflected by the half mirror and irradiated perpendicularly to the piezoelectric vibrating piece wafer formed by etching, reflected by the piezoelectric vibrating piece wafer, and transmitted through the half mirror Etching of a piezoelectric vibrating piece wafer by photographing reflected light of light and detecting an area where the intensity of the reflected light in the taken image is low as an etching defect formed in the piezoelectric vibrating piece wafer Defect inspection method.

  By the above method, the reflected light is a combination of the surface reflection on the surface of the piezoelectric vibrating piece wafer before electrode formation and the back surface reflection on the back surface of the piezoelectric vibrating piece wafer. Here, since the reference light is scattered in the region having the etching defect, the reflected light intensity becomes small in the region. Therefore, the etching defect can be detected as a planar shape in a region where the reflected light intensity is small in the reflected light intensity distribution shown as an image. In addition, since the reference light is irradiated perpendicularly to the surface of the piezoelectric vibrating piece wafer, the scattered light from the edge of the piezoelectric vibrating piece wafer can be reduced, and the region where the reflected light intensity is low due to the etching defect and the region where the etching defect is not present Thus, the contrast with the region having high reflected light intensity can be improved, and the detection accuracy of etching defects can be improved.

[Application Example 2] The etching defect inspection method for a piezoelectric vibration piece wafer according to Application Example 1, wherein the base material of the piezoelectric vibration piece wafer is a Z plate crystal having a Z-axis as a crystal growth direction.
A piezoelectric vibrating piece using a Z-plate crystal base plate is often used. In this case, the surface of the piezoelectric vibrating reed wafer surface is formed with the crystal Z-axis approximately in the normal direction. Further, the direction in which the etch channel that causes etching defects extends is often close to the Z-axis direction. Therefore, the etching defect extends in the thickness direction of the piezoelectric vibrating reed wafer. Therefore, the projection component in the surface direction of the piezoelectric vibrating reed wafer is shortened by the above method, and an image with a high degree of integration of etching defects can be obtained. The contrast of the image can be improved.

  [Application Example 3] The etching defect is formed by an amorphous etch channel defect formed by extending in the thickness direction of the piezoelectric vibrating piece wafer in the process of manufacturing the quartz crystal in the step of etching the piezoelectric vibrating piece wafer. 3. The method for inspecting an etching defect of a piezoelectric vibrating piece wafer according to Application Example 1 or 2, wherein the etching defect is grown into a hole.

  When a piezoelectric vibrator formed by applying an electrode to a piezoelectric vibrating piece wafer vibrates in the plane direction, if there is such an etching defect in the outer region of the vibrating portion, the sectional moment of inertia, that is, the bending rigidity is reduced. There is a risk of damage due to impact or the like. Therefore, it is possible to reliably select the piezoelectric vibrating reed wafer having such etching defects, improve the yield of the piezoelectric vibrating reed and the piezoelectric vibrator formed thereafter, and reduce the cost.

  Application Example 4 A light absorbing means for preventing return light of the transmitted reference light from reaching the piezoelectric vibrating reed wafer is disposed on the side of the piezoelectric vibrating reed wafer through which the reference light is transmitted. An etching defect inspection method for a piezoelectric vibrating piece wafer according to any one of Application Examples 1 to 3, wherein:

  As a result, it is possible to prevent the return light from being mixed into the piezoelectric conductive piece wafer, to prevent the contrast between the region where the reflected light intensity is large and the region where the reflected light is small, and to improve the detection efficiency of etching defects.

  Application Example 5 A light source that generates reference light and a half mirror that causes the reference light to be incident perpendicularly to a piezoelectric vibrating piece wafer formed by etching by reflecting the reference light and transmitting the reflected light of the reference light And imaging means for photographing the reflected light that has passed through the half mirror and outputting image data, and an etching defect formed in the piezoelectric vibrating piece wafer in a region where the intensity of the reflected light of the image data is low An etching defect inspection system for a piezoelectric vibrating reed wafer, comprising:

  With the above configuration, the reflected light is a combination of the surface reflection on the surface of the piezoelectric vibrating piece wafer before electrode formation and the back surface reflection on the back surface of the piezoelectric vibrating piece wafer. Here, since the reference light is scattered in the region having the etching defect, the reflected light intensity becomes small in the region. Therefore, an etching defect inspection system for a piezoelectric vibrating piece wafer that can detect an area having a small reflected light intensity as a shape in plan view of an etching defect in the reflected light intensity distribution shown as an image. In addition, since the reference light is irradiated perpendicularly to the surface of the piezoelectric vibrating piece wafer, the scattered light from the edge of the piezoelectric vibrating piece wafer can be reduced, and the region where the reflected light intensity is low due to the etching defect and the region where the etching defect is not present Thus, an etching defect inspection system for a piezoelectric vibrating piece wafer with improved contrast with a region having a high reflected light intensity and improved etching defect detection accuracy is obtained.

  Application Example 6 A light absorbing means for preventing return light of the transmitted reference light from reaching the piezoelectric vibrating reed wafer is disposed on the side of the piezoelectric vibrating reed wafer through which the reference light is transmitted. An etching defect inspection system for a piezoelectric vibrating piece wafer according to Application Example 5, wherein:

  This prevents the return light from being mixed into the piezoelectric vibrating piece wafer, prevents the contrast between the high reflected light area and the small area from decreasing, and improves the etching defect detection efficiency. It becomes an inspection system.

  Hereinafter, a piezoelectric vibrator and a piezoelectric device according to the present invention will be described in detail using embodiments shown in the drawings. However, the components, types, combinations, shapes, relative arrangements, and the like described in this embodiment are merely illustrative examples and not intended to limit the scope of the present invention only unless otherwise specified. .

FIG. 1 shows an etching defect inspection method for a piezoelectric vibrating piece wafer according to the present embodiment, and an etching defect inspection system 10 for a piezoelectric vibrating piece wafer that embodies the method.
In the etching defect inspection method for a piezoelectric vibrating piece wafer according to the present embodiment, the reference light is reflected by a half mirror, and the reference light is irradiated perpendicularly to the piezoelectric vibrating piece wafer formed by etching. The reflected light of the reference light that has been reflected and transmitted through the half mirror is photographed, and a region with a low intensity of the reflected light in the photographed image is detected as an etching defect formed in the piezoelectric vibrating piece wafer. An etching defect inspection system 10 for a piezoelectric vibrating reed wafer that embodies this is provided with a lens barrel 20, a light source 22, a half mirror 24, a camera 26 as an imaging means, a sample stage 28, and a detection unit 40 as a detection means. The piezoelectric vibrating reed wafer 12 is an inspection object.

  The piezoelectric vibrating reed wafer 12 is obtained by polishing a quartz ore with the Z-axis as the crystal growth direction and mirror-polishing both surfaces of a base plate cut out with a wire saw or the like with a surface having the Z-axis as a normal line, and then forming an outer pattern with photolithography. This is a wafer in which the outer shape of a plurality of piezoelectric vibrating reeds is formed by wet etching, and before the electrodes are formed.

  Etch channels extending in the Z-axis direction are formed in the quartz crystal with the Z-axis as the crystal growth direction. This is because the crystal growth rate in the direction perpendicular to the Z-axis direction is slower than the crystal growth rate in the Z-axis direction. This etch channel can be detected at the stage of the rough or the base plate cut out from it, but it is difficult to detect the exact position because of visual inspection. However, this etch channel has an etching rate that is higher than that of a defect-free region because the etchant penetrates from the exposed portion of the surface of the base plate of the etch channel by a wet etching process that forms the outer shape of the piezoelectric vibrating piece in the subsequent stage. The fast etch channel region is etched to increase the inner diameter and appear as an etching defect 14 (see FIG. 3A) having a shape like a through hole. For example, when a WT type gyro vibrating piece 16 (FIG. 2A) or a tuning fork type piezoelectric vibrating piece 18 (FIG. 2B) as shown in FIG. 2 is formed as the piezoelectric vibrating piece, these vibrating arms 16a. , 18a vibrate in the plane direction, but if there is an etching defect in the outer region of the root portions 16b, 18b of such a vibrating arm, the secondary moment of the vibrating arm is small, that is, the bending rigidity is small, Further, stress concentrates on the etching defect and it is easily damaged by impact or the like. Similarly, if the grooves 16c and 18c formed in the vibrating arms 16a and 18a have etching defects, they are easily damaged by impact or the like.

  When the groove 16c is provided, electric lines of force are formed between the groove 16c and the side surface as shown by an arrow in FIG. 2C showing the ss ′ cross section of the vibrating arm 16a of the gyro vibrating piece 16. Therefore, the electric field efficiency is increased, and the Q value of the vibration A in FIG. 2A can be increased. If the Q value can be secured, the groove need not be provided. Similarly, the groove 18c provided in the tuning fork type piezoelectric vibrating piece 18 also has an effect of increasing the Q value of the vibration B.

  Next, with reference to FIGS. 5A to 5E and FIGS. 6F to 6H, when a crystal wafer is used as a piezoelectric base plate, a process in which etch channel defects grow into etching defects. explain. It is assumed that the vibrating arm 52 has etch channel defects 56, 58, and 60, and the vibrating arm 54 has no etch channel defects.

As shown in FIG. 5A, the quartz 50 is sputtered or deposited in the order of Cr and Au to form a corrosion-resistant film 64, and then an external pattern resist 66 is formed on the corrosion-resistant film 64.
As shown in FIG. 5B, the anticorrosion film 64 is removed by etching while leaving a portion covered with the resist 66. Thereafter, a resist 68 having a groove pattern is formed in the corrosion-resistant film 64 as shown in FIG.

  Next, when the crystal 50 is etched using buffered hydrofluoric acid, the crystal etching proceeds as shown in FIGS. 5D and 5E to form an outer shape. In addition, since the etching rate differs depending on the crystal orientation, a protrusion 62 is formed on the side surface on the + X axis side. Here, the etch channel defect is considered to be a structure in which glass (amorphous in a broad sense) is embedded in the crystal, and has a higher etching rate than the surrounding crystal. Therefore, the etch channel defect 56 is etched and grows into an etching defect 70 (etching defect 14) such as a through hole. On the other hand, the etch channel defects 58 and 60 covered with the anticorrosion film 64 are not eroded by the etching solution, and maintain the state where the glass is buried.

Next, after removing the corrosion resistant film 64 in the region where the groove is to be formed as shown in FIG. 6F by etching, the crystal 50 is etched to form the groove 74 as shown in FIG. Here, the etching channel defect 58 in the groove 74 has an etching rate higher than that of quartz, and thus grows into an etching defect 74 (etching defect 14) such as a through hole.
Next, as shown in FIG. 6H, an etching defect inspection is performed on the wafer from which the resist 68 and the corrosion-resistant film 64 have been removed.

In other words, etch channel defects grow into etching defects such as through-holes in the vicinity of the edge of the outer shape and in the groove region, so that the bending rigidity of the vibrating arm is weakened or the strength is reduced due to the concentration of stress and cracks are missing. It causes a defect. On the other hand, the etch channel defect in the region where the crystal is not etched maintains the strength because the glass is filled. Therefore, even if an etch channel defect is detected in the quartz base plate, it cannot be determined whether or not it becomes defective. However, since the etch channel grows into an etching defect in the state where the outer shape and the groove are formed, the defect determination is made. Is possible.
And after performing an etching defect inspection, after forming the excitation electrode which is not shown in the groove | channel 74 and the side surface 76 (FIG.6 (h)), a piezoelectric vibrating piece is obtained by dividing | segmenting into a piece from a wafer.

  The lens barrel 20 holds the light source 22, the half mirror 24, and the camera 26. The lens barrel 20 has a cylindrical shape as a whole, and the inner wall of the lens barrel 20 is treated so as to be able to absorb light by matte coating or the like in order to prevent irregular reflection of light. The lens barrel 20 is set up vertically and fixed by a sample stage 28 or a predetermined member (not shown) outside the system.

  The opening 20a at the upper end and the opening 20b at the lower end of the lens barrel 20 are formed at positions that overlap each other in plan view. A camera 26 is attached to the opening 20a at the upper end, and the opening 20b at the lower end is directed to the sample stage. A branch tube 30 is attached to the center of the lens barrel 20 in the horizontal direction, and a light source 22 that generates reference light 32 is attached to the tip of the branch tube 30.

  The half mirror 24 is mounted on the line (optical axis O) connecting the center of the opening 20 a and the opening 20 b of the lens barrel 20 and at the same height as the branch tube 30. The half mirror 24 is attached to the inner wall of the lens barrel 20 with the mirror surface tilted approximately 45 ° from the vertical direction to the branch tube 30 side. The transmittance and reflectance of the half mirror 24 only need to have a certain ratio, but in order to maximize the intensity of light captured by the camera 26, the transmittance and reflectance should be 50% respectively. Good.

  The light source 22 is a light source that can be detected by the camera 26 and has a frequency band in which the half mirror 24 and the piezoelectric vibrating piece wafer 12 do not absorb light. In addition, a lens 22a is disposed after the light source 22 so that the reference light 32 can be emitted as parallel light. The light source 22 may have a spectrum (white light) spread in a predetermined frequency band, but it is desirable that the light source 22 be monochromatic light in consideration of the chromatic aberration of the lens 22a. By making the reference light 32 parallel light, it is possible to prevent the reference light 32 from diffusing on the optical path and preventing the intensity of the reflected light 34 of the reference light 32 reaching the camera 26 from decreasing, and the piezoelectric vibrating reed wafer 12. Since all the reference light 32 that reaches is incident on the wafer surface (surface 12a) of the piezoelectric vibrating reed wafer 12 perpendicularly, scattered light from the edge of the piezoelectric vibrating reed wafer 12 is prevented from entering the camera 26 as stray light. Therefore, it is possible to prevent a decrease in contrast described later.

  A camera 26 attached to the opening 20 a at the upper end of the lens barrel 20 is used to photograph the reflected light 34 of the reference light 32 reflected by the piezoelectric vibrating reed wafer 12. The camera 26 is formed by a lens 26a and an image sensor 26b. The optical axis O of the camera 26 is vertical and coincides with a line connecting the centers of the circular openings 20 a and 20 b of the lens barrel 20. Similarly, the optical axis O also passes through the central portion of the half mirror 24. Due to the above optical system, a part of the reference light 32 emitted from the light source 22 is reflected in the lower part of the half mirror 24 in the state of parallel light and is reflected in the upper part of the vertical direction by the piezoelectric vibrating piece wafer 12. A part of the reflected light 34 that has been transmitted reaches the camera 26 while maintaining a parallel light state.

  In the image sensor 26b of the camera 26, the normal of the imaging surface coincides with the optical axis O. The lens position is adjusted so that the camera 26 is focused on the surface 12 a of the piezoelectric vibrating reed wafer 12. Therefore, the image pickup device 26b can take an image focused on the surface 12a of the piezoelectric vibrating piece wafer 12. Note that the camera 26 is focused on the surface 12a of the piezoelectric vibrating piece wafer 12 because of the image of the etching defect 14 near the focused surface 12a and the image of the etching defect 14 near the focused back surface 12b. This is because the image of the etching defect 14 near the surface 12a looks sharper and can be focused more easily.

  A sample stage 28 on which the piezoelectric vibrating reed wafer 12 is placed is disposed below the lens barrel 20. The sample stage 28 is formed in a hollow shape, and an opening 28a is formed at the upper end. The opening 28a is formed at a position (on the optical axis O) that overlaps the opening 20a, 20b of the lens barrel in plan view. The piezoelectric vibrating reed wafer 12 is placed so as to close the opening 28a. The inside of the cavity has light absorbing means 28b for preventing light from being irregularly reflected by matte coating or the like. Therefore, the light transmitted through the piezoelectric vibrating reed wafer 12 and entering the cavity again exits from the opening 28a and enters the piezoelectric vibrating reed wafer 12 again, which is prevented from entering the camera 26 as stray light, which will be described later. A reduction in contrast can be prevented.

FIG. 3 shows a schematic diagram of reflected light and a schematic diagram of an image seen from the camera.
As shown in FIG. 3A, when the reference light 32 is vertically incident on the piezoelectric vibrating piece wafer 12, the reference light 32 is reflected by the surface 12a of the piezoelectric vibrating piece wafer 12, and the first reflected light 34a. Second reflected light 34b that is transmitted through the front surface 12a and reflected by the back surface 12b (or by repeating multiple reflections between the front surface 12a and the back surface 12b) and the back surface 12b (or between the front surface 12a and the back surface 12b) It is divided into transmitted light 36 that is transmitted through repeated multiple reflections. Then, the reflected light 34 obtained by combining the first reflected light 34 a and the second reflected light 34 b reaches the camera 26. At this time, if the etching defect 14 is exposed on the surface 12a, the reference light 32 is scattered in the exposed region, so that the reflected light follows the shape of the exposed region in the intensity distribution of the first reflected light 34a. The light intensity decreases. In addition, the reference light 32 transmitted through the front surface 12a is scattered by the etching defect 14 in the region where the etching defect 14 is viewed in plan, and the light reflected by the back surface 12b is also scattered in the region where the etching defect 14 is viewed in plan. In the intensity distribution of the second reflected light 34b, the reflected light intensity decreases following the outer shape of the etching defect 14 in plan view. Further, since the camera 26 is focused on the surface 12a of the piezoelectric vibrating reed wafer 12, the contrast between the region where the reflected light intensity is high and the region where the reflected light intensity is high is the largest on the surface 12a of the piezoelectric vibrating reed wafer 12. Contrast decreases with increasing distance. However, when the direction in which the etching defect 14 extends is almost perpendicular to the surface of the piezoelectric vibrating piece wafer 12, an image with a high integration degree of the etching defect 14 can be obtained, and thus an image with high contrast is obtained.

  Therefore, as shown in FIG. 3B, the image sensor 26b can obtain an image in which the first reflected light 34a and the second reflected light 34b are added, but the region where the etching defect 14 is exposed on the surface. 14a has the smallest reflected light intensity. In addition, the intensity of the reflected light is smaller in the region having the shape of the etching defect 14 in plan view than in the region without the etching defect 14, but for the reason described above, the contrast decreases with increasing distance from the surface 12a. The reflected light intensity appears to increase as the area becomes larger. Therefore, the image pickup device 26a can obtain the etching defect 14 in plan view as a negative image having gradation as a whole. In FIG. 3B, the region where the reflected light intensity is low is drawn black, and conversely, the high region is drawn white.

Image data 38 obtained by the image sensor 26 b is output to the detection unit 40. The image data 38 has, for example, plane coordinates that form the same plane as the image pickup surface 26c of the image pickup element 26b, and the image pickup surface that constitutes the image pickup element 26b with the center (optical axis O) of the image pickup element 26b as the origin of the plane coordinates. The interval between the light receiving elements (not shown) arranged in 26c is defined as the plane resolution, and the reflected light intensity is obtained for each coordinate position of the plane coordinates of each light receiving element.
The detection unit 40 detects the etching defect 14 by extracting a region that falls below a predetermined threshold value from the distribution of reflected light intensity indicated by the image data 38.

  FIG. 4 shows a schematic diagram of image processing. In the image processing in the detection unit 38, for example, as shown in FIG. 4, the plane coordinates indicated by the image data 38 are divided into divided planes 38a having a predetermined size. At this time, the minimum unit of the dividing plane 38a is an area (pixel area) of a light receiving element (not shown). The reflected light intensity is simplified to, for example, an intensity level of 256 steps for each divided plane 38a. If a predetermined number of divided planes 38a having an intensity level of 100 or less exist in a straight line (10 in FIG. 4B), it is determined that there is an etching defect 14 in that region, and a detection signal is output. Output to the outside. As described above, the detection unit 40 can detect the etching defect 14 in the piezoelectric vibrating reed wafer 12 by appropriately setting the size of the dividing plane 38a, the number of steps of the intensity level, and the threshold of the intensity level.

  As described above, according to the etching defect inspection method for the piezoelectric vibrating reed wafer 12 and the inspection system embodying the same according to the present embodiment, the reflected light 34 is reflected on the surface of the piezoelectric vibrating reed wafer 12 before electrode formation. The surface reflection at 12 a and the back surface reflection at the back surface 12 b of the piezoelectric vibrating reed wafer 12 are combined. Here, since the reference light 32 is scattered in the region where the etching defect 14 exists, the reflected light intensity becomes small in that region. Therefore, the etching defect 14 can be detected as a shape in plan view in a region where the reflected light intensity is low in the reflected light intensity distribution indicated by the image data 38 shown as an image. Further, since the reference light 32 is irradiated perpendicularly to the surface of the piezoelectric vibrating reed wafer 12, the scattered light from the edge of the piezoelectric vibrating reed wafer 12 can be reduced, and the region where the reflected light intensity caused by the etching defect 14 is low and the etching The contrast between the region having no defect 14 and the region having high reflected light intensity can be improved, and the detection accuracy of the etching defect 14 can be increased.

  In addition, a piezoelectric vibrating piece using a Z-plate crystal base plate is often used. In this case, the surface of the piezoelectric vibrating reed wafer 12 is formed with the crystal Z-axis approximately in the normal direction. Further, the direction in which the etch channel that causes the etching defect 14 extends is often close to the Z-axis direction. Therefore, since the etching defect 14 extends in the thickness direction of the piezoelectric vibrating reed wafer 12, the projection component in the surface direction of the piezoelectric vibrating reed wafer is shortened by the above method, and an image with a high degree of integration of the etching defect 14 can be obtained. As described above, the contrast of the image can be improved. Further, when a piezoelectric vibrator formed by applying an electrode to the piezoelectric vibrating piece wafer 12 vibrates in the plane direction, if such an etching defect 14 exists in the outer region of the vibrating portion, the sectional moment of inertia, that is, bending rigidity. Therefore, there is a risk of damage due to impact or the like. Therefore, the piezoelectric vibrating reed wafer 12 having such an etching defect 14 can be reliably selected, the yield of the piezoelectric vibrating reed and the piezoelectric vibrator formed thereafter can be improved, and the cost can be reduced.

  Then, light absorbing means for preventing the return light of the transmitted reference light 32 (transmitted light 36) from reaching the piezoelectric vibrating reed wafer 12 on the side of the piezoelectric vibrating reed wafer 12 through which the reference light 32 is transmitted. 28b is provided to prevent the return light from being mixed into the piezoelectric guiding piece wafer 12, thereby preventing the contrast between the high reflected light area and the small area from decreasing, and improving the detection efficiency of etching defects. Can do.

It is a mimetic diagram of an etching defect inspection system concerning this embodiment. It is a schematic diagram of a piezoelectric vibrating reed wafer to be inspected according to the present embodiment. It is a schematic diagram of the reference light irradiated to a piezoelectric vibrating piece wafer. It is a schematic diagram of the image processing of the etching defect inspection system according to the present embodiment. It is a figure which shows the process in which an etch channel defect grows into an etching defect by an etching process. It is a figure which shows the process in which an etch channel defect grows into an etching defect by an etching process.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ......... Etching defect inspection system, 12 ......... Piezoelectric vibrating piece wafer, 14 ......... Etching defect, 16 ......... Gyro vibrating piece, 18 ......... Tuning fork type piezoelectric vibrating piece, 20 ...... Lens barrel, 22 ......... Light source, 24 ......... Half mirror, 26 ......... Camera, 28 ......... Sample stand, 30 ......... Branch tube, 32 ......... Reference light, 34 ......... Reflected light, 36 ... ... Transmitted light, 38 ... Image data, 40 ... Detection section, 50 ... Crystal, 52 ... Vibration arm, 54 Vibration arm, 56 Etch channel defect, 58 Etch channel defect, 60 ......... Etch channel defect, 62 ... ... Projection, 64 ... ... Corrosion resistant film, 66 ... ... Resist, 68 ... ... Resist, 70 ... ... Etching defect, 72 ... ... Etching Defect, 74 ......... groove, 76 ......... side.

Claims (6)

Reflecting the reference light to the half mirror and irradiating the reference light vertically to the piezoelectric vibrating piece wafer formed by etching,
Photographing the reflected light of the reference light reflected by the piezoelectric vibrating piece wafer and transmitted through the half mirror,
An etching defect inspection method for a piezoelectric vibrating piece wafer, wherein an area where the intensity of the reflected light in the photographed image is low is detected as an etching defect formed in the piezoelectric vibrating piece wafer.   2. The method for inspecting an etching defect of a piezoelectric vibrating reed wafer according to claim 1, wherein the base material of the piezoelectric vibrating reed wafer is a Z plate crystal having a Z-axis as a crystal growth direction.   The etching defect is an amorphous etch channel defect formed by extending in the thickness direction of the piezoelectric vibrating piece wafer in the process of producing the quartz crystal, and has grown into a through hole in the step of etching the piezoelectric vibrating piece wafer. The method for inspecting an etching defect of a piezoelectric vibrating piece wafer according to claim 1 or 2, wherein:   The light absorbing means for preventing the return light of the transmitted reference light from reaching the piezoelectric vibrating reed wafer is disposed on the side of the piezoelectric vibrating reed wafer through which the reference light is transmitted. The etching defect inspection method for a piezoelectric vibrating piece wafer according to any one of Items 1 to 3. A light source that generates reference light;
A half mirror that vertically reflects the reference light to the piezoelectric vibrating reed wafer formed by etching and reflects the reference light, and transmits the reflected light of the reference light;
Imaging means for imaging the reflected light transmitted through the half mirror and outputting image data;
An etching defect inspection system for a piezoelectric vibrating reed wafer, comprising: a detection unit that detects an area where the intensity of the reflected light of the image data is low as an etching defect formed in the piezoelectric vibrating reed wafer.   The light absorbing means for preventing the return light of the transmitted reference light from reaching the piezoelectric vibrating reed wafer is disposed on the side of the piezoelectric vibrating reed wafer through which the reference light is transmitted. Item 6. The etching defect inspection system for a piezoelectric vibrating piece wafer according to Item 5.