JP2010070828A - Mask fixture for vacuum film deposition and method for producing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a mask fixture for vacuum film deposition whose surface is hard to be eroded, and which is not deformed and can be repeatedly used by cleaning. <P>SOLUTION: The mask fixture for vacuum film deposition is arranged at the front face of a film deposition face when the material to be film-deposited is subjected to vacuum film deposition. The mask fixture for vacuum film deposition is composed of ferritic stainless steel covered with an iron based oxide film consisting essentially of Fe<SB>3</SB>O<SB>4</SB>. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a vacuum film formation mask jig used in an electronic device manufacturing process such as a direct conversion type digital X-ray sensor and a method for manufacturing the same.

  In recent years, device development and production using vacuum film formation has been actively performed, and various electronic devices in which functional materials are formed on a substrate placed in a specified area using vacuum film formation are manufactured. It is provided in various fields.

  For example, in recent years, the spread of digital X-ray sensors is accelerating. Among them, a direct conversion type digital X-ray sensor using Se or Se compound (hereinafter also referred to as Se) that directly photoelectrically converts X-rays, Compared to an indirect digital X-ray sensor that uses a scintillator that once converts X-rays into visible light, high-definition and high-quality shooting and recording are possible, and in recent years, rapid development has been achieved. In the medical device field, there is an increasing demand for low price and high reliability for further spread in the future. One way to achieve this is to improve yield and quality by suppressing crystal defects in the production line, further reducing the cost and product reliability of direct-conversion digital X-ray sensors with superior functions. Improvement is expected.

  There are various factors that can cause crystal defects in the production line of a direct conversion type digital X-ray sensor. Particularly, the generation of nuclei of large crystal defects from inside or outside is a major factor. For example, Se is mainly used for photoelectric conversion materials, but Se itself has a very low melting point and glass transition point, so that part of it is easily crystallized due to temperature distribution during film formation, and the origin of giant crystal defects. It may become.

  In addition, when manufacturing by forming a multilayer film by vacuum film formation, the film formation region is often different in each layer for functional reasons. When forming a multilayer film having different film formation regions, after forming the lower layer film, the vacuum chamber is opened to the atmosphere, the mask jig defining the film formation region is replaced, and then the upper layer is formed. It is usual to form a film. At this time, a large amount of Se adheres to the mask jig that defines the film formation area, but it is desirable that the mask jig be repeatedly cleaned and used from the viewpoint of cost. However, the mask jig is the part closest to the film formation area. If the cleaning is insufficient, the Se films once formed are detached from this area and adhere to the film formation area. There is a case.

  There are various methods for cleaning Se from the mask jig. (1) A method of removing by physically scraping or tapping, (2) A difference in thermal expansion or volume deformation during crystallization is used. And (3) a method of evaporating by heating in vacuum (for example, Patent Document 1), and (4) a method of physically softening and removing with high-pressure hot water (for example, Patent Document 2).

  However, (1) is naturally not applicable as a complete cleaning method, and residues are also generated by the methods (2) and (4), so that complete cleaning is difficult and may cause crystal defects. There is. The most ideal is the method (3) of heating and evaporating in a vacuum. According to this method, the residue can be physically removed completely.

  By the way, when vacuum deposition is performed on a deposition target material, a mask jig is disposed in front of the deposition surface, Se is vacuum deposited, and then the mask jig is cleaned. The material of the jig is greatly affected. For example, as described in Patent Document 1, when a mask jig is formed of an Al material, precision processing is possible, and Se can be removed by cleaning by vacuum heating evaporation. The material is vulnerable to heat, and there is a problem that strain deformation occurs at a heating temperature of 150 ° C. or less. Therefore, it is not desirable from the viewpoint of cleaning that the mask jig, which is a precision processed product, is formed of an Al material.

  The cleaning method for completely evaporating Se attached to the surface of the mask jig requires a temperature of about 250 ° C. In order to withstand this, a stainless steel mask is required due to its characteristics and cost. A jig is preferred. In particular, ferritic stainless steel that does not contain Ni, such as SUS430, among stainless steels is excellent in workability, and is suitable for a mask jig for vacuum film formation that requires precision machining.

  However, when ferritic stainless steel is used as it is for a vacuum film forming mask jig, when a highly erodible material such as Se is used, cleaning by heating and evaporation in vacuum cannot be used because it is completely eroded. In addition, ferritic stainless steel is sometimes subjected to electroless Ni plating for the purpose of smoothing surface irregularities and suppressing dust generation, but Ni plating easily reacts with Se at a relatively low temperature. Therefore, it is not suitable for a mask jig in the case where a material that reacts easily is vacuum-deposited.

As a method for improving the corrosion resistance of ferritic stainless steel, Patent Document 3 discloses a method of improving the corrosion resistance by adding Mo, and Patent Document 4 includes Si in a stainless steel matrix and heat-treats at a very high temperature. Thus, a method for forming an oxide film mainly composed of Si is described.
JP-A-55-149949 JP 59-18104 Japanese Patent Laid-Open No. 3-219555 JP 7-62520 A

  However, the method described in Patent Document 3 prevents Cr deficiency at the grain boundary and prevents corrosion from the grain boundary, and thus has the effect of slightly delaying corrosion, but stainless itself from a highly erodible material such as Se. It does not prevent corrosion. Moreover, since the method described in Patent Document 4 heat-treats stainless steel at a very high temperature, there is a concern about deformation of the stainless steel.

  The present invention has been made in view of such circumstances, and can be precisely processed. For example, the present invention hardly reacts with substances such as Se, and the surface is not easily eroded even by a cleaning method that evaporates Se by vacuum heating. An object of the present invention is to provide a vacuum film-forming mask jig that can be used repeatedly by cleaning without being deformed, and a method for manufacturing the same.

The vacuum film-forming mask jig of the present invention is a vacuum film-forming mask jig that is disposed in front of the film-forming surface when vacuum-forming a film-forming material, The mask jig is made of ferritic stainless steel covered with an iron-based oxide film mainly composed of Fe ₃ O ₄ (magnetite).
The thickness of the Fe ₃ O ₄ mainly ferrous oxide coating is preferably 3nm or more.

  Only in the iron-based oxide film, Group 3 elements (Sc, Y, lanthanoids, actinoids) and Group 4 elements (Ti, Zr, Hf) It is preferable that 0.1 mol% or more of at least one strongly reducing element among group 5 elements (V, Nb, Ta), Al, Si, and P is included. In the following, the Group 3, Element, Group 4, Element, and Group 5 elements mean the elements shown in parentheses, and this description is omitted, and is also simply referred to as Group 3, Element 4, Group 5, and Element 5.

  It is preferable that the strongly reducing element is relatively present on the surface side of the iron-based oxide film. Here, the presence of a relatively large amount on the surface side of the iron-based oxide coating means that the concentration of the surface (the surface on the opposite side) is relatively higher than the ferrite-based stainless steel side with which the iron-based oxide coating is in contact. Means.

The vacuum film-forming mask jig is preferably used for vacuum film-forming of Se or Se compounds.
In particular, the vacuum film formation is preferably vacuum deposition.

The manufacturing method of the vacuum film-forming mask jig of the present invention is characterized by firing ferritic stainless steel in an oxidizing atmosphere at 150 ° C. or higher and 350 ° C. or lower.
The vacuum film-forming mask jig of the present invention is a group 3 element, a group 4 element, or a group 5 element that is a strongly reducing element rather than Cr, which is a standard element of the ferritic stainless steel, only in the iron-based oxide film. As one aspect for producing at least one strongly reducing element of at least one of the group elements, Al, Si, and P, an organic substance or an organic metal containing the strongly reducing element is ferrite. It is preferable to apply it to a stainless steel and fire at 150 ° C. or higher and 350 ° C. or lower in an oxidizing atmosphere.

  The vacuum film-forming mask jig of the present invention is a group 3 element, a group 4 element, or a group 5 element that is a strongly reducing element rather than Cr, which is a standard element of the ferritic stainless steel, only in the iron-based oxide film. As another embodiment for producing at least one strong reducing element of group elements, Al, Si, and P in an amount of 0.1 mol% or more, an organic substance or an organic metal containing the strong reducing element is volatilized. Preferably, the ferritic stainless steel is fired at 150 ° C. or higher and 350 ° C. or lower in the volatile atmosphere and the oxidizing atmosphere.

The vacuum film-forming mask jig of the present invention is a vacuum film-forming mask jig that is disposed in front of the film-forming surface when vacuum-depositing a film-forming material. Since the mask jig is made of ferritic stainless steel covered with an iron-based oxide film mainly composed of Fe ₃ O ₄ , it hardly reacts with erosive substances such as Se and Se compounds, and can block these erosive substances. In addition, even with a cleaning method in which Se is evaporated by vacuum heating, the surface is not easily eroded and is not deformed, and can be used repeatedly by cleaning.

Further, in the method of manufacturing the vacuum film forming mask jig of the present invention, since ferritic stainless steel is baked at 150 ° C. or higher and 350 ° C. or lower in an oxidizing atmosphere, the surface of Fe _{3 is} not deformed without deforming the ferritic stainless steel. An iron-based oxide film mainly composed of O ₄ can be grown, and a process for producing a highly reliable and low-cost device can be realized.

Hereinafter, the vacuum film-forming mask jig and the manufacturing method thereof according to the present invention will be described in more detail. The vacuum film-forming mask jig of the present invention is made of a ferritic stainless steel covered with an iron-based oxide film mainly composed of Fe ₃ O ₄ , and the ferritic stainless steel is fired at 150 ° C. or higher and 350 ° C. or lower in an oxidizing atmosphere. Can be manufactured.

  The ferritic stainless steel used in the present invention is a stainless steel that does not contain Ni and forms a stable ferrite phase, and does not harden even when heat-treated, while having excellent characteristics in terms of corrosion resistance and heat resistance. If stainless steel belongs to ferritic stainless steel, SUS430 containing about 18 mol% Cr, SUS430F containing S in SUS430 base, SUS434 containing about 1 mol% Mo in SUS430 base, about 16 mol% Cr SUS429 containing only SUS410L, SUS410L with reduced impurity C, and the like can be used without particular limitation. Among them, SUS430, which is the simplest composition composed only of Fe and Cr, is preferable because it is excellent in precision workability and inexpensive in terms of cost. Further, SUS430F containing a small amount of S is also preferable as a mask jig material which has excellent free-cutting properties and requires precision processing, and SUS410L in which C, which is an impurity, is reduced, is also easy to handle.

  The vacuum film-forming mask jig of the present invention is a ferritic stainless steel in an oxidizing atmosphere (atmosphere in the presence of oxygen, such as in the air), in a temperature range where the stainless steel is not deformed and at a relatively low temperature of about 150 ° C to 350 ° C. By heating the stainless steel for a long time, preferably 1 to 10 hours, more preferably 3 to 5 hours, an iron-based oxide film can be formed on the surface of the ferritic stainless steel. As a result of this iron-based oxide film functioning as a barrier layer with respect to the vacuum film formation mask jig by vacuum film formation, it becomes possible to block erodible substances and facilitate cleaning. The film mask jig can be used repeatedly.

The thickness of the Fe ₃ O ₄ -based iron-based oxide coating is more preferably 1 nm or more, and more preferably 3 nm or more from the viewpoint of the blocking effect of the erodible substance. Here, the iron-based oxide film mainly composed of Fe ₃ O ₄ means that the iron-based oxide film contains 50 mol% or more of Fe ₃ O ₄ . The content of Fe ₃ O ₄ in the iron-based oxide film can be analyzed by Raman spectroscopy.

  Further, the iron-based oxide coating can be further strengthened by adding various materials that are significantly more easily oxidized than Cr, which is a standard element of ferritic stainless steel. Specifically, it is a group 3 element, a group 4 element, a group 5 element, Al, Si, and P, which are elements more strongly reducing than Cr, which is a standard element of ferritic stainless steel. Table 1 shows a list of oxide standard generation enthalpies (heat of formation) per element by element (reference values).

  From Table 1, it is inferred that the standard generation enthalpy is larger than Cr in Group 3, Group 4, Group 5 elements and Al, Si, and P, and is strongly reducible (easy to oxidize). It is expected to be clearly larger than Cr-based oxides. Although there are no literature values for Group 3 Sc and LaAc, it is speculated from the structure of the outer electrons that the Group 3, 4 and 5 elements are strongly reducible. Similarly, the standard production enthalpy is large, and it is presumed to be strongly reducing.

  The standard generation enthalpy of Ca, B, etc. is relatively large, but is almost the same as Cr, and the effect is limited. Therefore, in order to enhance the corrosion resistance of the ferritic stainless steel iron-based oxide coating, it is very effective to add Group 3, Group 4, Group 5 elements and Al, Si, and P, which are clearly more reducible than Cr. I understand that.

  From the knowledge of impurities in ferritic stainless steel, if the amount of these elements is 0.1 mol% or more in the iron-based oxide film, it can be determined that they are intentionally added rather than impurities. It is possible to further strengthen the iron-based oxide film. Furthermore, by making these elements relatively present on the surface side in the iron-based oxide film of the mask jig, it can be easily combined with oxygen to form a strong oxide, which can be expected to further improve the corrosion resistance. .

  Thus, in order to produce a strong reducing element only in the iron-based oxide film so as to contain 0.1 mol% or more, the strong reducing element may be heat-treated together with the ferritic stainless steel, for example, Applying organic materials or organic metals containing strong reducible elements to ferritic stainless steel and firing in an oxidizing atmosphere at 150 ° C. or higher and 350 ° C. or lower, or volatilizing organic materials or organic metals containing strongly reducible elements The ferritic stainless steel can be manufactured by a method of firing at 150 ° C. or higher and 350 ° C. or lower in a volatile atmosphere and in an oxidizing atmosphere.

Examples of organic substances or organometallics containing strongly reducing elements include organic compounds such as silanol (Me ₃ SiOH, Me ₂ Si (OH) -Si (OH) Me ₂ ), which is a compound in which a hydroxy group is bonded to a silicon atom. An organic solvent containing a metal compound and metal alkoxides of various strongly reducing elements, for example, metal alkoxides such as aluminum alkoxide, titanium alkoxide, and tantalum alkoxide are preferably used.

Although the mask jig of the present invention can be used for film formation of various functional isomeric materials in vacuum, it is an amorphous material having high erosion and high volatility, particularly used as a photoelectric conversion material for a direct digital X-ray sensor. In the vacuum film formation of a Se compound such as As ₂ Se ₃ used for a heat-resistant layer for preventing crystallization of Se and Se compounds, for example, amorphous Se, erosion is particularly severe. It can be suitably used for vacuum film formation.

  The mask jig of the present invention can be widely used in vacuum film-forming methods, for example, vacuum deposition, RF sputtering, ion beam sputtering, ion plating, EB deposition, plasma CVD, MO-CVD, laser ablation, etc. Is possible. In particular, in the production of an extremely thick amorphous Se thick film used for a direct type digital X-ray sensor or the like, since the deposition of Se on the mask jig is intense, it can be particularly preferably used in the case of vacuum deposition.

  The mask jig of the present invention is less likely to react with erosive substances as described above, and can block these erosive substances, and since the surface is less likely to be eroded by vacuum heating due to cleaning and does not deform, Although various cleanings are possible, the most preferable method is a method of heating and evaporating in a vacuum, whereby the erodible substance can be physically and completely removed. Further, it may be combined with a method utilizing a difference in thermal expansion or volume deformation at the time of crystallization. For example, if the crystallization temperature of an erodible substance is first, and Se and Se compounds, volume deformation at a crystallization temperature of about 120 ° C. The residue may be roughly peeled off and the remaining residue may be evaporated and removed by heating in vacuum. This method is the most ideal because there is very little damage to the mask jig surface.

  FIG. 1 is a schematic plan view showing an embodiment of the mask jig of the present invention, and FIG. 2 is a schematic diagram of a vapor deposition apparatus using the mask jig of the present invention. A mask jig 10 shown in FIG. 1 is disposed in front of a vapor deposition surface when vapor-depositing a material to be vapor-deposited, and has two large openings 11. And it sets in the state aligned with the opening part 11 so that the two board | substrates which are the vapor deposition materials hold | maintained by the substrate holder 13 may be arrange | positioned in front of a vapor deposition surface.

  And it sets to the upper part of the vapor deposition apparatus 20 shown in FIG. The vapor deposition apparatus 20 is set with a vacuum chamber 21, a substrate holder 13 that holds the substrate 12 disposed in the vacuum chamber 21, and a vapor deposition material 22 (deposition material, for example, Se as described above). The evaporation source 23 and a heating evaporation means (not shown) for heating and evaporating the evaporation source 23 are vapor-deposited on the surface of the substrate 12 held on the lower surface of the substrate holder 13. Device. A control plate (such as a mesh) 24 for controlling the evaporated vapor is provided above the evaporation source 23.

In the present invention, since the surface 10a of the mask jig 10 is covered with an iron-based oxide film mainly composed of Fe ₃ O ₄ (in addition, a mask having an aspect containing a strongly reducing element only in the iron-based oxide film) In the jig, the concentration of the surface 10a of the mask jig 10 is preferably higher than that of the mask jig 10 on the substrate holder 13 side). Even if the vapor deposition material is evaporated by vacuum vapor deposition, the mask jig 10 The surface 10a is hardly eroded and does not deform, and can be used repeatedly by cleaning.
Hereinafter, the present invention will be described in more detail with reference to examples.

Example 1
Using ferritic stainless steel SUS430, precision processing was performed so that two 240 mm × 300 mm size glass substrates could be set, and then the surface was polished so that Rmax = 2 μm or less after milling. After this was washed with alcohol, a heat treatment (annealing) was performed in the atmosphere at 200 ° C. for 5 hours to produce a mask jig.

(Example 2)
A mask jig was produced in the same manner as in Example 1 except that the heat treatment was performed in the atmosphere at 300 ° C. for 5 hours.

(Comparative Example 1)
Using a ferritic stainless steel SUS430, a mask jig was prepared by precision processing so that two 240 mm × 300 mm glass substrates could be set (no surface treatment or annealing treatment).

The results of Auger electron spectroscopy (AES analysis) of the iron-based oxide coatings of the mask jigs of Comparative Examples 1 and 2 are shown in FIGS. 3, 4 and 5, respectively, and the analysis results by Raman spectroscopy are shown in FIG. Note that RT (room temperature), 200 ° C., and 300 ° C. described in the drawings of FIGS. 3, 4, 5, and 6 indicate annealing temperatures. 4 and 5 is compared with FIG. 3, the thickness of the iron-based oxide film is increased by heating in the atmosphere, and in Example 1 (FIG. 4), the iron-based oxide film having an oxygen half value of about 5 nm. In Example 2 (FIG. 5), it can be seen that an iron-based oxide film having an oxygen half value of 10 nm or more is formed. Further, FIG. 6 shows that an iron-based oxide film mainly composed of Fe ₃ O ₄ is formed by heating in the atmosphere, and the peak of Fe ₃ O ₄ becomes stronger as the heat treatment temperature rises. You can see that grows. Further, as is apparent from FIG. 6, it can be seen that the formed iron-based oxide film contains a large amount of Fe ₃ O ₄ .

(Cleaning evaluation)
Two 240 mm × 300 mm glass substrates provided with a simple matrix electric signal extraction electrode were set on the mask jig produced in Examples 1 and 2, and As ₂ Se ₃ was used as a heat-resistant layer as a photoelectric conversion layer. Se was deposited in a vacuum for a total of about 500 μm. After film formation, the substrate was removed and the mask jig was cleaned. Cleaning of the mask jig was performed in two stages: (1) volumetric deformation peeling by heat crystallization and (2) evaporation cleaning by heating in vacuum. First, the temperature was raised to 150 ° C. in the atmosphere and held for 1 hour, and most of Se and Se compounds were peeled off by utilizing volume deformation caused by crystallization of Se and Se compounds. Although most of Se and Se compounds could be peeled off by heat crystallization, a residue remained on the outer periphery. The mask in which the residue remained was kept in vacuum at 250 ° C. for 3 hours to completely evaporate the remaining Se and Se compounds. When the state of the mask surface after vapor deposition and vacuum heat cleaning was visually observed, the residue completely disappeared.

(AES analysis evaluation after Se deposition)
7 and 8 show the results of AES analysis when Se was directly deposited on the mask jig of Comparative Example 1 and the mask jig of Example 1, and was heated and evaporated in a vacuum for cleaning. As can be seen from FIG. 7, in the mask jig of Comparative Example 1, Se penetrates deeply and reacts with Fe, and is completely corroded. Further, the surface condition by visual observation has large unevenness due to corrosion, and the separation of the corroded material was recognized, which was a problematic level for repeated use as a mask jig. On the other hand, as can be seen from FIG. 8, in the mask jig of Example 1, Se remains at about 2 nm from the surface and does not erode deeper than that. Moreover, in the surface state by visual observation, no unevenness and no detachment of corrosive substances were observed due to corrosion.

  Here, FIG. 9 shows the Se penetration depth after vacuum heating deposition according to film thickness. As the Se vapor deposition film thickness increases, the Se penetration depth after vacuum heating vapor deposition increases. However, when the Se film thickness is small, it can be set to a level that cannot be detected. Therefore, it is presumed that the surface of the mask jig is hardly damaged even if cleaning is performed by heat evaporation in a vacuum after removing most of the Se and Se compounds by heat crystallization and volume deformation.

In the above embodiment, a mask jig provided with an iron-based oxide film mainly composed of Fe ₃ O _{4 of} about 10 nm by precision processing SUS430, which is a ferritic stainless steel, and then heat-treating in air at 200 ° C. for 5 hours. However, it is possible to further increase the strength of the iron-based oxide coating by adding a strongly reducing element to the iron-based oxide coating rather than Cr, which is a standard element of stainless steel. By adding the strong reducing element, the strong reducing element is easily combined with oxygen during the heating of the oxidizing atmosphere when forming the iron-based oxide film, and the iron-based oxide film can be strengthened.

  FIG. 10 shows the results of Auger electron spectroscopy analysis of a mask jig in which Si is added to a SUS430 iron-based oxide film by heat treatment together with silanol. As can be seen from FIG. 10, it can be seen that the surface of the iron-based oxide film contains a large amount of Si, which can improve the strengthening of the iron-based oxide film. FIG. 11 shows the Se penetration depth when Se is deposited thickly on the mask jig. As is clear from FIG. 11, even when the Se vapor deposition film thickness is large, the Se penetration depth when Si is added is shallower than the iron-based oxide film when Si is not included. It can be seen that the corrosion resistance is improved as compared with the case where Si is not added.

  In this embodiment, SUS430, which is a typical ferritic stainless steel, is used as the material for the mask jig. However, as the ferritic stainless steel for the mask jig material, in addition to SUS430, SUS430F and SUS434 described above are used. The same effect can be obtained even if various kinds of general ferritic stainless steel materials such as SUS429, SUS410L, and SUS430F are used.

  As described above, since the mask jig surface of the present invention is not easily corroded even if the material attached to the mask jig after film formation is heated and evaporated and cleaned in vacuum, the mask jig is completely cleaned. It can be used repeatedly in the state. Therefore, by adopting this mask jig, it is possible to repeat the vapor deposition process with very little dust generation, and it can be expected to improve reliability by preventing defects on the device and cost reduction effect by improving yield. A highly reliable direct digital X-ray sensor can be produced with good yield and low cost.

Schematic plan view showing an embodiment of the mask jig of the present invention Schematic schematic diagram of a vapor deposition apparatus using the mask jig of the present invention Auger electron spectroscopic analysis results of untreated mask jig surface Results of Auger electron spectroscopy analysis on the surface of the mask jig in Example 1 Results of Auger electron spectroscopy analysis on the surface of the mask jig of Example 2 Results of mask jig surface Raman analysis by heat treatment temperature Results of surface Auger electron spectroscopy analysis after cleaning of the mask jig of Comparative Example 1 Results of surface Auger electron spectroscopy analysis after cleaning of mask jig of Example 1 Graph showing the relationship between Se deposition thickness and Se penetration depth Results of surface Auger electron spectroscopy analysis after cleaning of mask jig with Si-added iron-based oxide coating The graph which shows the relationship between Se vapor deposition thickness and Se penetration depth in the mask jig | tool which provided the iron-type oxide film of Si addition.

Explanation of symbols

10 Mask jig
11 opening
12 Board
13 Holder
20 Vapor deposition equipment
21 Vacuum chamber
22 Vapor deposition materials
23 Evaporation source
24 Control board

Claims (9)

A vacuum film forming mask jig disposed in front of a film forming surface when vacuum film forming is performed on a film forming material, wherein the vacuum film forming mask jig is an Fe ₃ O ₄ based iron-based material A mask jig for vacuum film formation, comprising a ferritic stainless steel covered with an oxide film. 2. The vacuum film-forming mask jig according to claim 1, wherein the iron-based oxide film mainly composed of Fe ₃ O ₄ has a thickness of 3 nm or more.   Only in the iron-based oxide film, at least one of the group 3 element, the group 4 element, the group 5 element, Al, Si, and P, which is a stronger reducing element than Cr, which is a standard element of the ferritic stainless steel. The vacuum film-forming mask jig according to claim 1, wherein 0.1 mol% or more is included.   The vacuum film-forming mask jig according to claim 3, wherein the strong reducing element is relatively present on the surface side of the iron-based oxide film.   The vacuum film-forming mask jig according to any one of claims 1 to 4, wherein the vacuum film-forming mask jig is used for vacuum film formation of Se or a Se compound.   6. The vacuum film-forming mask jig according to claim 1, wherein the vacuum film-forming is vacuum deposition.   A method for manufacturing a vacuum film-forming mask jig that is placed in front of a film-forming surface when vacuum-depositing a film-forming material, wherein ferritic stainless steel is placed in an oxidizing atmosphere at 150 ° C. or higher and 350 ° C. or lower. A method for producing a vacuum film-forming mask jig, characterized by firing at a temperature.   After applying an organic substance or an organic metal containing at least one strongly reducing element among Group 3 element, Group 4 element, Group 5 element, Al, Si, and P to the ferritic stainless steel, in an oxidizing atmosphere, 150 ° C. or more The method for producing a mask jig for vacuum film formation according to claim 7, wherein baking is performed at 350 ° C. or lower.   Volatilizing an organic substance or an organic metal containing at least one strongly reducing element among group 3 element, group 4 element, group 5 element, Al, Si, P, and the ferritic stainless steel in the volatile atmosphere and the oxidizing atmosphere, The method of manufacturing a mask jig for vacuum film formation according to claim 7, wherein baking is performed at 150 ° C. or higher and 350 ° C. or lower.

Images