JP2010067477A - Electron emitting device, electron source, visual display unit, information display reproducing apparatus, and method for manufacturing them - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electron emitting device which has stable electron emission characteristics having a small variation for a long term, and also to provide an electron source. <P>SOLUTION: The electron emitting device includes a pair of conductive films separated and placed in a first direction on the surface of a substrate; and a plurality of carbon films which connect a pair of conductive films, respectively, have gaps, and are separated from each other and placed in a second direction that differs from the first direction. The device is characterized in that: a part of the surface of the substrate is exposed between the plurality of carbon films in the second direction; and the exposed part is one part of the surface of the substrate and is composed of a material that suppresses deposition of carbon in comparison with a material constituting the part covered by the plurality of carbon films. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an electron-emitting device, an electron source using the same, an image display device, an information display / reproduction device, and a method for manufacturing the same.

  Electron emission devices include field emission type and surface conduction type electron emission devices.

  FIG. 13A is a plan view schematically showing a surface conduction electron-emitting device. FIG. 13B is a schematic cross-sectional view taken along the line B-B ′ of FIG. This electron-emitting device includes a pair of auxiliary electrodes (2, 3) on a substrate (1), and a pair of conductive layers facing each other with a first gap (7) between the pair of auxiliary electrodes (2, 3). Provided with a conductive film (4a, 4b). Conductive carbon films (21a, 21b) are provided on the substrate (1) in the first gap (7) and on the conductive films (4a, 4b) in the vicinity of the first gap (7). Yes.

  When electrons are emitted from the electron-emitting device, the potential applied to one auxiliary electrode (2 or 3) is set higher than the potential applied to the other auxiliary electrode (3 or 2). In this way, by applying a voltage to the auxiliary electrode (2) and the auxiliary electrode (3), a strong electric field is generated in the second gap (8). As a result, a large number of portions (a plurality of electron emission portions) of the carbon film (21a or 21b) connected to the auxiliary electrode (3 or 2) on the low potential side and constituting the outer edge of the second gap. It is believed that electrons tunnel from the part) and some of the electrons are emitted.

Patent Document 1 discloses a technique for improving electron emission characteristics by using the material of the substrate (1).
JP-A-9-293448

  In recent image display devices, it is required that the display image can be stably displayed with little variation in luminance over a long period of time. Therefore, in an image display device provided with an electron source in which a plurality of electron-emitting devices are arranged, it is required that each electron-emitting device maintains good characteristics and a state in which fluctuation is small over a long period of time.

  However, when a conventional surface conduction electron-emitting device is driven, depending on the sheet resistance of the conductive film (4) (if it is low), the “fluctuation” in the amount of electron emission (the fluctuation of the electron emission current may occur in a short time) There is a problem that a phenomenon occurs.

  Further, as described above, it is considered that electrons tunnel from a part of the edge of one of the carbon films (21a or 21b) and from the many places constituting the outer edge of the gap (8). For example, when the first auxiliary electrode (2) is driven with a higher potential than the second auxiliary electrode (3), the second auxiliary electrode (3) is interposed via the second conductive film (4b). The second carbon film (21b) to be connected corresponds to the emitter. As a result, it is assumed that there are a large number of electron emission portions at the edge of the second carbon film (21b) and at the portion constituting the outer edge of the second gap (8). That is, along the second gap (8), a large number of electron emission portions are arranged at the edge of the carbon film (21a or 21b) connected to the auxiliary electrode (3 or 2) to which a low potential is applied, The individual electron emission portions are considered to be electrically connected by the resistance value of the carbon film. Therefore, even if the conductive film (4) having a higher sheet resistance than the carbon film (21a or 21b) is disposed, the coupling resistance between the electron emission portions disposed at the edge of the carbon film (21a or 21b). Therefore, the “fluctuation” of the electron emission amount may not be sufficiently suppressed.

  Therefore, in the electron source in which a large number of the electron-emitting devices are arranged, the “fluctuation” of the electron emission amount that is considered to be caused by the resistance value of the conductive film (4) or the connection resistance between the electron-emitting portions due to the carbon film. It was happening. In addition, in the image display device using the electron-emitting device, there are cases where luminance variations and luminance variations of adjacent pixels, which are considered to be caused by “fluctuation” of the electron emission amount, occur. Therefore, it has been difficult to obtain a high-definition and good display image.

  In view of the above problems, an object of the present invention is to provide an electron-emitting device and an electron source that have stable electron-emitting characteristics with little fluctuation over a long period of time. At the same time, another object of the present invention is to provide a long-life image display device with little fluctuation.

  According to a first aspect of the present invention, a pair of conductive films provided on the surface of the substrate so as to be separated from each other in the first direction, each connecting the pair of conductive films, including a gap, and the first An electron-emitting device including a plurality of carbon films provided apart from each other in a second direction different from the one direction, wherein the surface of the substrate is between the plurality of carbon films in the second direction. Is exposed, and the exposed portion is a part of the surface of the substrate and suppresses carbon deposition more than the material constituting the portion covered with the plurality of carbon films. It is composed of a material.

  A second aspect of the present invention is a pair of conductive films provided on the surface of the substrate so as to be separated from each other in the first direction, each of which connects the pair of conductive films, includes a gap, and A method for manufacturing an electron-emitting device, comprising: a plurality of carbon films provided apart from each other in a second direction different from the first direction, wherein the first portion mainly comprises silicon oxide; and silicon oxide And a second portion mainly composed of a material that suppresses the deposition of carbon, on a substrate having a surface provided alternately and adjacently in the second direction, facing in the one direction and A step of providing the pair of conductive films separated from each other, and a pulse voltage is repeatedly applied between the pair of conductive films in an atmosphere containing carbon, so that each of the plurality of first portions is formed on each of the plurality of first parts. Provided in the second direction. And, and, each comprising a gap, characterized in that it comprises a step of forming a plurality of carbon film.

  ADVANTAGE OF THE INVENTION According to this invention, the electron-emitting element which can maintain a favorable electron emission characteristic over a long term can be provided. As a result, it is possible to provide an image display device and an information display reproduction device that can display a high-quality display image with little luminance change.

  Hereinafter, the electron-emitting device and the manufacturing method thereof according to the present invention will be described. The materials and values shown below are examples. As long as the object and the effect of the present invention are achieved, the above materials and numerical values can adopt various materials and values modified so as to be suitable for the application.

  Various embodiments of the electron-emitting device of the present invention will be described below.

  The basic configuration of this embodiment will be described with reference to FIGS. 1 (a) to 1 (c). FIG. 1A is a schematic plan view showing a typical configuration in the present embodiment. FIGS. 1B and 1C are schematic cross-sectional views taken along B-B ′ and C-C ′ of FIG.

  On the substrate (1), the first auxiliary electrode (2) and the second auxiliary electrode (3) are arranged at a distance L1 apart. That is, the first auxiliary electrode (2) and the second auxiliary electrode (3) are separated in the X direction (first direction). The width of the first auxiliary electrode (2) and the second auxiliary electrode (3) is W. Here, the electron-emitting device including the auxiliary electrode (2, 3) will be described, but the auxiliary electrode (2, 3) may be omitted.

  The first conductive film (4a) is connected to the auxiliary electrode (2), and the plurality of first carbon films (21a) are connected in common. Similarly, the second conductive film (4b) is connected to the auxiliary electrode (3), and a plurality of second carbon films (21b) are connected in common.

  The plurality of first carbon films (21a) are not directly connected to each other, but are connected in parallel via the first conductive film (4a). Similarly, the plurality of second carbon films (21b) are not directly connected but are connected in parallel via the second conductive film (4b). By adopting such a configuration, the “fluctuation” of the electron emission amount can be suppressed.

  The first conductive film (4a) and the second conductive film (4b) have a width W '.

  The first conductive film (4a) and the second conductive film (4b) face each other in the X direction (first direction) with the second gap 7 interposed therebetween. That is, the first conductive film (4a) and the second conductive film (4b) are disposed on the substrate so as to be separated from each other in the first direction. In other words, the pair of conductive films (4a, 4b) are arranged on the substrate apart from each other in the first direction. Similarly, the first carbon film (21a) and the second carbon film (21b) face each other in the X direction (first direction) with the first gap 8 interposed therebetween. That is, the first carbon film (21a) and the second carbon film (21b) are spaced apart from each other in the first direction and disposed on the substrate. In other words, the pair of carbon films (21a, 21b) are arranged on the substrate apart from each other in the first direction.

  FIG. 1 shows a form in which the first carbon film (21a) and the second carbon film (21b) are completely separated. However, since the gap (8) has a very narrow width, the gap (8), the first carbon film (21a), and the second carbon film (21b) are collectively expressed as a “carbon film having a gap”. be able to. Therefore, the plurality of carbon films (21a, 21b) each having a gap are provided apart from each other in a second direction which is a direction (typically a vertical direction) different from the X direction (first direction). It has been.

  The substrate (1) includes an activation suppression unit (9) and an activation promotion unit (10) provided so as to be exposed at least in the gap 7. A plurality of activation suppression units (9) and activation promotion units (10) are arranged alternately and adjacent to each other along the Y direction (second direction) in FIG. That is, the substrate (1) includes an activation suppression unit (9) and an activation promotion unit (10) arranged in parallel along the second direction on the surface thereof, and the activation suppression unit and the activation promotion unit. Is located in the gap 7. Here, the activation suppression part (9) and the activation promotion part (10) were each provided in the form of a film on the surface of the substrate (1). However, as will be described later, the activation suppression unit (9) or the activation promotion unit (10) may be configured by a part of the substrate (1). In addition, an activation promotion part can be paraphrased in 1st part, and an activation suppression part (9) can be paraphrased as 2nd part.

  The activation suppressing part (9) has a width (length in the Y direction in FIG. 1) L2, and the activation promoting part (10) has a width L3. In the example shown in FIG. 1, the lengths (the lengths in the X direction in FIG. 1) of the activation suppressing part (9) and the activation promoting part (10) are both longer than L1. However, the lengths of the activation suppressing portion (9) and the activation promoting portion (10) may be at least as long as the width of the gap (7) (the length in the Y direction in FIG. 1).

  In the example of FIG. 1, the example in which the activation promoting portion (10) is provided immediately below both ends of the conductive films (4a, 4b) in the Y direction is shown. However, the conductive films (4a, 4b) in the Y direction are shown. ) May be provided immediately below both ends of the activation suppressor (9). When the activation promoting portion (10) is provided immediately below both ends of the conductive films (4a, 4b) in the Y direction, the conductive films (4a, 4b) are formed as shown in FIG. The surface of the substrate (1) that is not covered (exposed) is preferably provided with an activation suppressing portion (9).

  In this way, fluctuations in electron emission characteristics due to the deposition of a new carbon film during driving of the electron-emitting device can be suppressed. That is, the activation suppressing part (9) is a part capable of suppressing carbon film deposition (carbon deposition) compared to the activation promoting part (10). In other words, the activation suppression part (9) is a part having a lower carbon film deposition (carbon deposition) rate than the activation promotion part (10). For this reason, it is possible to avoid a direct connection between a plurality of carbon films (21a or 21b) even during driving and during an “activation” process described later.

  In the gap 7, each of the first carbon film (21a) and the second carbon film (21b) is substantially disposed only on the activation promoting part (10). Accordingly, a plurality of carbon film pairs (each of which is composed of the first carbon film 21 (a) and the second carbon film 21 (b)) are provided at a distance L2 from each other in the Y direction. Note that the width (length in the Y direction) of the pair of carbon films corresponds to L3.

  In FIG. 1 (a), two activation suppression units (9) and three activation promotion units (10) are alternately arranged in the Y direction immediately below the conductive films (4a, 4b). An example is shown. However, in the electron-emitting device of the present embodiment, two or more pairs of carbon films need to be provided without being directly connected to each other. Therefore, in the electron-emitting device of this embodiment, at least one activation suppression portion (9) in the Y direction is present in the gap 7 (that is, between the first conductive film and the second conductive film). What is necessary is just to be pinched | interposed by two activation promotion parts (10). Of the surface of the substrate 1, the portions other than the activation suppression portion (9) and the activation promotion portion (10) defined as described above are the activation suppression film (9) and the activation promotion film (10). good. Further, the lengths L2 and L3 in the Y direction in FIG. 1 are smaller than the width W ′ of the conductive films (30a, 30b). L2 is practically set to 100 nm or more. And it is preferable for L3 / L1 and L2 / L1 to be 0.05 or less, since the fluctuation of the emission current Ie can be particularly reduced.

  The width of the gap (8) (the length in the X direction in FIG. 1) is set so that the driving voltage is set to 30 V or less in consideration of the cost of the driver and the discharge due to unexpected voltage fluctuations during driving is suppressed. Therefore, it is practically set to 1 nm or more and 10 nm or less. The width of the gap (7) (the length in the X direction in FIG. 1) is always wider than the width of the gap (8).

  FIG. 1 shows a form in which the first carbon film (21a) and the second carbon film (21b) are completely separated. However, since the gap (8) has a very narrow width as described above, the gap (8), the first carbon film (21a), and the second carbon film (21b) are collectively referred to as “carbon film having a gap”. Can be expressed. Therefore, the above-mentioned “carbon film pair” can be expressed as “a carbon film having a gap”. Therefore, the electron-emitting device of the present invention is an electron-emitting device that emits electrons by applying a voltage between one end and the other end of a carbon film having a gap when driven. Can do.

  In some cases, the first carbon film (21a) and the second carbon film (21b) are connected in a very small region. If the region is extremely small, the region has a high resistance, so that the influence on the electron emission characteristics is limited, and thus it is acceptable. Such a form in which the first carbon film (21a) and the second carbon film (21b) are partially connected can also be expressed as a “carbon film having a gap”.

  FIG. 1A shows an example in which the gap (8) has a linear shape. However, the gap (8) is preferably linear, but is not limited to a linear shape. It may be a predetermined form such as a bend with a specific periodicity, an arc shape, or a combination of an arc and a straight line.

  Here, the gap (8) is configured such that the edge (outer edge) of the first carbon film (21a) and the edge (outer edge) of the second carbon film (21b) face each other.

  When a potential higher than the potential of the first auxiliary electrode 2 is applied to the second auxiliary electrode 3 at the time of driving (electron emission), for example, a part of the edge of the first carbon film (21a) It is considered that a large number of electron emission portions exist in the portion constituting the outer edge of the gap (8). It is considered that the first carbon film (21a) connected to the first auxiliary electrode (2) corresponds to the emitter. That is, it is considered that a large number of electron emission portions are present in a part of the edge of the first carbon film (21a) and constituting the outer edge of the gap (8).

  The gap (7) and the gap (8) can also be formed by applying nanoscale various high-definition processing methods such as FIB (focused ion beam) to the conductive film. Therefore, the gap (7) and the gap (8) of the electron-emitting device of the present invention are not limited to those formed by the “energization forming” process and the “activation” process described later.

  By adopting the configuration as described above, the electron-emitting device of this embodiment can suppress “fluctuation” of the amount of electron emission compared to the conventional surface conduction electron-emitting device.

As materials for the first conductive film (4a) and the second conductive film (4b), conductive materials such as metals and semiconductors can be used. For example, metals or oxides such as Pd, Ni, Cr, Au, Ag, Mo, W, Pt, Ti, Al, Cu, and Pd, or alloys thereof can be used. Conductive films (4a, 4b), for the "fluctuation" suppression of electron emission quantity is the effect of the present invention, Rs (sheet resistance) of the carbon films (21a, 21b) high 10 ⁴ Omega than the resistance value of It is formed with a resistance value of / □ or more. The resistance value of the conductive films (4a, 4b) is preferably a resistance value of 10 ⁵ Ω / □ or more and 10 ⁷ Ω / □ or less.

  Specifically, the film thickness showing the resistance value is preferably in the range of 5 nm to 100 nm. Rs is a value that appears when a resistance R measured in the length direction of a film having a thickness t, a width w, and a length l is expressed as R = Rs (l / w), and the resistivity is represented by ρ. Then, Rs = ρ / t. The width W ′ of the conductive films (4a, 4b) is preferably set smaller than the width W of the auxiliary electrodes (2, 3) (see FIG. 1 (a)). By setting W wider than W ′, variation in distance from the auxiliary electrode (2, 3) to each electron emission portion can be reduced. The value of W ′ is not particularly limited, but is preferably 10 μm or more and 500 μm or less as a practical range.

  The distance L1 in the direction (X direction, first direction) in which the first auxiliary electrode (2) and the second auxiliary electrode (3) face each other and the thickness of each auxiliary electrode are appropriately determined depending on the application form of the electron-emitting device. Designed. For example, when used in an image display device such as a television described later, the design is made in accordance with the resolution. In particular, high definition (HD) televisions require high definition, so the pixel size must be reduced. Therefore, it is designed to obtain a sufficient emission current Ie in order to obtain a sufficient luminance while the size of the electron-emitting device is limited. A practical range of the distance L1 is set to 50 nm to 200 μm, preferably 1 μm to 100 μm. As described above, the first auxiliary electrode (2) and the second auxiliary electrode (3) are not essential constituent elements for the electron-emitting device of this embodiment.

The substrate (1) is not particularly limited. For example, quartz glass, blue plate glass, a glass substrate in which silicon oxide (typically SiO ₂ ) is laminated on a glass substrate, or a glass substrate with reduced alkali components is used. Can be used.

As a material for the auxiliary electrodes (2, 3), a conductive material such as a metal or a semiconductor can be used. For example, metals or alloys such as Ni, Cr, Au, Mo, W, Pt, Ti, Al, Cu, and Pd and metals or metal oxides such as Pd, Ag, Au, RuO ₂ , and Pd—Ag are used. be able to.

  As a material of the activation suppressing portion (9), an oxide such as a metal or a semiconductor, a nitride, or a mixture thereof is preferably used. For example, an oxide of W, Ti, Ta, Al, Ni, Co, Cu, or Ge, a nitride of Si, Al, or Ge, or a mixture thereof can be given. In particular, any of aluminum oxide, tantalum oxide, titanium oxide, silicon nitride, and aluminum nitride is preferable.

  Examples of the material of the activation promoting portion (10) include silicon oxide (typically SiO2), glass mainly composed of silicon oxide, and the like. Therefore, when the substrate 1 is glass mainly composed of silicon oxide, a part of the surface of the substrate 1 can be used as the activation promoting portion (10). That is, if the activation suppression unit 9 is provided in a predetermined pattern (for example, in the form of a film) on the surface of the substrate 1, the surface of the substrate 1 that is not covered with the activation suppression unit 9 becomes the Can fulfill the function. When the thickness of the activation suppression portion (10) is so large that it cannot be ignored, a region in the surface of the substrate 1 where the activation suppression portion (10) is provided may be dug down by etching or the like. Similarly, if the substrate 1 is made of a material that functions as the activation suppressing unit 9, the activation promoting unit 10 may be provided in a predetermined pattern (for example, in a film shape) on the surface of the substrate 1.

  Next, an example of a method for manufacturing the electron-emitting device of this embodiment will be described with reference to FIG. 2A to 2D are schematic cross-sectional views taken along line A-A 'in FIGS. 2A to 2D. The production method of the present invention can be performed, for example, by the following steps (1) to (5).

(Process 1)
The substrate (1) is sufficiently cleaned, and a material for forming the activation suppression portion (9) is deposited by CVD, sputtering, or the like. And the activation suppression part (9) is provided on the board | substrate 1 by patterning using a photolithographic technique etc. FIG. Next, a material for forming the activation promoting portion (10) is deposited by CVD, sputtering, or the like. And the activation promotion part (10) is provided on the board | substrate 1 by patterning using a photolithographic technique etc. FIG. The values described in the above-described exemplary embodiments may be appropriately applied to the materials of the activation suppression unit (9) and the activation promotion unit (10), the widths (L2, L3), and the like.

  Next, a material for forming the auxiliary electrodes (2, 3) is deposited by a vacuum evaporation method, a sputtering method, or the like. Then, the first auxiliary electrode (2) and the second auxiliary electrode (3) are provided on the substrate 1 by patterning using a photolithography technique or the like (FIG. 2 (a)).

  The values described in the above-described embodiments may be appropriately applied to the material, the film thickness, the interval (L1), the width (W), and the like of the auxiliary electrode (2, 3).

(Process 2)
Subsequently, a conductive film (4) that connects between the first auxiliary electrode (2) and the second auxiliary electrode (3) provided on the substrate 1 is formed (FIG. 2B).

  As a method for forming the conductive film (4), for example, an organic metal film is first formed by applying and drying an organic metal solution. Then, the organic metal film is heated and fired to form a metal compound film such as a metal film or a metal oxide film. Thereafter, the conductive film 4 having a predetermined pattern can be obtained by patterning by lift-off, etching, or the like.

  As a material of the conductive film (4), a conductive material such as a metal or a semiconductor can be used. For example, metals such as Ni, Cr, Au, Mo, W, Pt, Ti, Al, Cu, and Pd or metal compounds (alloys, metal oxides, and the like) can be used.

  In addition, although demonstrated here by the apply | coating method of the organometallic solution, the formation method of an electroconductive film (4) is not restricted to this. For example, it can also be formed by a known method such as a vacuum deposition method, a sputtering method, a CVD method, a dispersion coating method, a dipping method, a spinner method, or an ink jet method.

The conductive film (4) is formed in a resistance value range where Rs (sheet resistance) is 10 ⁵ Ω / □ or more and 10 ⁷ Ω / □ or less.

  The process after the process 3 shown below can be performed after arrange | positioning the board | substrate (1) which finished the said processes 1-2 in the vacuum apparatus shown in FIG. 3, and evacuating the inside, for example. Note that the measurement evaluation apparatus shown in FIG. 3 includes a vacuum device (vacuum chamber), and the vacuum device includes equipment necessary for the vacuum device such as an unillustrated exhaust pump and a vacuum gauge. The inside can perform various measurement evaluations under a desired vacuum. In addition, by attaching a gas introduction device (not shown) to the measurement and evaluation apparatus, a carbon-containing gas used for an “activation” process described later can be introduced into the vacuum apparatus at a desired pressure. Moreover, the whole vacuum apparatus and the board | substrate (1) arrange | positioned in a vacuum apparatus can be heated with a heater not shown.

(Process 3)
A gap 7 is provided in the conductive film 4 (FIG. 2C).

  As an example of a method of providing the gap 7, an “energization forming” process or the like can be used. The “energization forming” process can be performed by repeatedly applying a pulse voltage whose pulse peak value is a constant voltage (constant) between the first auxiliary electrode (2) and the second auxiliary electrode (3). (FIG. 2 (c)) Moreover, it can also be performed by applying a pulse voltage while gradually increasing the pulse peak value. FIG. 4A shows an example of the pulse waveform when the pulse peak value is constant. In FIG. 4A, T1 and T2 are the pulse width and pulse interval (pause time) of the voltage waveform, T1 can be 1 μsec to 10 msec, and T2 can be 10 μsec to 100 msec. As the pulse waveform to be applied, a triangular wave or a rectangular wave can be used.

  Next, FIG. 4B shows an example of a pulse waveform when a pulse voltage is applied while increasing the pulse peak value. In FIG. 4B, T1 and T2 are the pulse width and pulse interval (pause time) of the voltage waveform, T1 can be set to 1 μsec to 10 msec, and T2 can be set to 10 μsec to 100 msec. As the pulse waveform to be applied, a triangular wave or a rectangular wave can be used. The peak value of the applied pulse voltage is increased by, for example, about 0.1 V step.

  In the example described above, a triangular wave pulse is applied between the first auxiliary electrode (2) and the second auxiliary electrode (3). However, the waveform applied between the auxiliary electrodes (2, 3) is not limited to a triangular wave, and a desired waveform such as a rectangular wave may be used. Further, the peak value, pulse width, pulse interval, etc. are not limited to the above values. An appropriate value can be selected in accordance with the resistance value of the electron-emitting device so that the first gap (7) is formed satisfactorily.

  By this step, the first conductive film (4a) and the second conductive film (4b) are formed on the substrate (1).

  As described above, the gap 7 is not limited to the “energization forming” process described above. The gap 7 can also be formed by various etching (for example, etching using FIB).

(Process 4)
Next, carbon films (21a, 21b) having a gap (8) are provided (FIG. 2 (d)).

  The carbon film can be formed by, for example, an “activation” process. In the “activation” process, for example, a carbon-containing gas is introduced into the vacuum apparatus shown in FIG. 3, and the atmosphere containing the carbon-containing gas is inserted between the auxiliary electrodes (2, 3) in FIG. As shown in FIG. 5B, a bipolar pulse voltage is applied a plurality of times. That is, a bipolar pulse voltage is applied a plurality of times between the first electrode (4a) and the second electrode (4b).

  By this treatment, carbon films (21a, 21b) having a gap (8) can be deposited on the activation promoting portion (10) located on the surface of the substrate 1 from the carbon-containing gas present in the atmosphere. . The deposited first carbon film (21a) and second carbon film (21b) are provided to face each other with a gap (8) therebetween. Specifically, on the activation promoting part (10) located on the surface of the substrate (1) between the first electrode (4a) and the second electrode (4b) and on the electrodes (4a, 4b) in the vicinity thereof. A carbon film (21a, 21b) is deposited on the substrate. That is, in the gap 7, a part of the first carbon film (21a) and a part of the second carbon film (21b) are provided on the activation promoting part (10). Further, on the activation suppressing part (10), the carbon films (21a, 21b) are not substantially deposited, and the gap (7) is maintained.

  Therefore, the first carbon film (21a) is formed on a part of each of the plurality of activation promoting parts (10) separated by the activation suppressing part (9) and located in the gap (7). ) And a part of the second carbon film (21b). As a result, a plurality of “carbon film pairs” can be provided on the substrate (1) separated from each other.

For example, an organic substance gas can be used as the carbon-containing gas. Examples of organic substances include alkanes, alkenes, alkyne aliphatic hydrocarbons, aromatic hydrocarbons, alcohols, aldehydes, ketones, amines, phenols, carboxylic acids, organic acids such as sulfonic acids, and the like. I can do it. Specifically, saturated hydrocarbons represented by C _n H _{2n + 2} such as methane, ethane, and propane, and unsaturated hydrocarbons represented by a composition formula such as C _n H _2n such as ethylene and propylene can be used. Further, benzene, toluene, methanol, ethanol, formaldehyde, acetaldehyde, acetone, methyl ethyl ketone, methylamine, ethylamine, phenol, formic acid, acetic acid, propionic acid and the like can also be used. In particular, tolunitrile is preferably used.

  The waveform of the bipolar pulse voltage applied during the “activation” process includes the potential of the auxiliary electrode (2) or the first electrode (4a) and the potential of the auxiliary electrode (3) or the second electrode (4b). Is a waveform that reverses the relationship at a predetermined timing or a predetermined cycle (see FIGS. 5A and 5B). The reversal of the potential relationship is preferably a waveform that is alternately reversed, but the present invention is not necessarily limited to a form that is alternately reversed.

  The application of the bipolar pulse voltage can be realized, for example, as follows. That is, a pulse voltage that makes the potential of the auxiliary electrode (2) or the first electrode (4a) higher than the potential of the auxiliary electrode (3) or the second electrode (4b) is applied. Thereafter, a pulse voltage is applied to make the potential of the auxiliary electrode (2) or the first electrode (4a) lower than the potential of the auxiliary electrode (3) or the second electrode (4b). And it is preferable to repeat this action. Note that it is possible to arbitrarily set which of the potential of the auxiliary electrode (2) or the first electrode (4a) and the potential of the auxiliary electrode (3) or the second electrode (4b) is set to the high potential first. it can.

  The maximum voltage value (absolute value) to be applied is preferably selected as appropriate in the range of 10 V to 25 V in practice.

  In FIG. 5A, T1 is a pulse width of a pulse voltage to be applied, and T2 is a pulse interval. In this example, the voltage value shows the case where the positive and negative absolute values are equal, but the voltage value may have different positive and negative absolute values. In FIG. 5B, T1 is a pulse width of a pulse voltage having a positive voltage value, and T1 'is a pulse width of a pulse voltage having a negative voltage value. T2 is a pulse interval. In this example, T1> T1 'is set, and the voltage value is set such that the positive and negative absolute values are set equal. However, the voltage value may have different positive and negative absolute values. The “activation” process is preferably terminated after the increase in the device current (If) becomes moderate.

  Here, the example in which the carbon films (21a, 21b) and the gap (8) are formed by the “activation” process has been described. However, the method of forming the carbon films (21a, 21b) is not limited to the “activation” process. For example, the carbon film (21a, 21b) can be formed by depositing a carbon film on the substrate (1) by sputtering and forming the gap 8 by various etching (for example, etching using FIB). .

  The electron-emitting device shown in FIG. 1 can be formed by the steps 1 to 4 described above.

  The manufactured electron-emitting device is preferably a “stabilization” process, which is a process of heating in a vacuum before driving (before applying an electron beam to a light emitter when applied to an image display device). I do.

  By performing the “stabilization” process, it is preferable to remove excess carbon and organic substances adhering to the surface of the substrate (1) and other portions by the above-mentioned “activation” process.

Specifically, excess carbon and organic substances are exhausted in a vacuum apparatus. Although it is desirable to eliminate the organic substance in the vacuum apparatus as much as possible, it is preferable to remove the organic substance up to 1 × 10 ⁻⁸ Pa or less. Further, the total pressure in the vacuum vessel including other gases than the organic substance is preferably 3 × 10 ⁻⁶ Pa or less.

  Through the above steps, the electron-emitting device of the present invention can be formed.

  Note that the method for manufacturing the electron-emitting device according to the above-described embodiment shown here is an example, and the electron-emitting devices according to the first to second embodiments described above are included in the electron-emitting devices manufactured by these manufacturing methods. Is not limited.

  Next, the basic characteristics of the electron-emitting device of the present invention described above will be described with reference to FIG. Typical relationship between the emission current (Ie) and device current (If) of the electron-emitting device of the present invention and the device voltage (Vf) applied to the auxiliary electrodes (2, 3), measured by the measurement and evaluation apparatus shown in FIG. A typical example is shown in FIG. In FIG. 6, the emission current (Ie) is remarkably smaller than the device current (If), and is shown in arbitrary units. As is apparent from FIG. 6, the electron-emitting device of the present invention has three properties with respect to the emission current (Ie).

  First, in the electron-emitting device of the present invention, the emission current Ie increases abruptly when a device voltage of a certain voltage (referred to as a threshold voltage; Vth in FIG. 6) is applied. On the other hand, the emission current (Ie) is hardly detected below the threshold voltage Vth. That is, it is a non-linear element having a clear threshold voltage Vth for the emission current (Ie).

  Second, since the emission current (Ie) depends on the device voltage Vf, the emission current (Ie) can be controlled by the device voltage Vf.

  Thirdly, the emitted charge captured by the anode electrode 44 depends on the time for applying the device voltage Vf. That is, the amount of charge trapped by the anode electrode 44 can be controlled by the time during which the element voltage Vf is applied.

  If the characteristics of the electron-emitting device as described above are used, the electron-emitting characteristics can be easily controlled according to the input signal.

  Next, application examples of the electron-emitting device of the present invention shown in the above-described embodiment will be described below.

  By arranging a plurality of electron-emitting devices of the present invention on a substrate, for example, an image display device such as an electron source or a flat panel television can be configured.

  Examples of the arrangement form of the electron-emitting devices on the substrate include a matrix type arrangement. In this arrangement form, the first auxiliary electrode (2) is connected to one of m X-directional wirings arranged on the substrate. The second auxiliary electrode (3) is electrically connected to one of the n Y-direction wirings arranged on the substrate. Note that m and n are both positive integers.

  Next, the configuration of this matrix type array of electron source substrates will be described with reference to FIG.

  The m X-direction wirings (72) described above are formed of Dx1, Dx2,..., Dxm, and are formed on the insulating substrate (71) by a vacuum deposition method, a printing method, a sputtering method, or the like. The X direction wiring (72) is made of a conductive material such as metal. The n Y-direction wirings (73) are composed of n wirings Dy1, Dy2,..., Dyn, and can be formed by the same method and the same material as the X-direction wiring (72). An insulating layer (not shown) is arranged between the m X-direction wirings (72) and the n Y-direction wirings (73) (intersection). The insulating layer can be formed by a vacuum deposition method, a printing method, a sputtering method, or the like.

  The X-direction wiring (72) is electrically connected to a scanning signal applying means (not shown) for applying a scanning signal. On the other hand, a modulation signal generator (not shown) applies a modulation signal for modulating electrons emitted from each selected electron-emitting device (74) to the Y-direction wiring (73) in synchronization with the scanning signal. Are electrically connected. The drive voltage Vf applied to each electron-emitting device is supplied as a differential voltage between the applied scanning signal and modulation signal.

  Next, an example of an electron source using an electron source substrate having the above matrix arrangement and an image display device will be described with reference to FIGS. FIG. 8 is a basic configuration diagram of an envelope (display panel) (88) constituting the image display device, and FIG. 9 is a schematic diagram showing a configuration of the phosphor film.

  In FIG. 8, a plurality of electron-emitting devices (74) of the present invention are arranged in a matrix on an electron source substrate (rear plate) (71). The face plate (86) has a phosphor film (84), a conductive film (85) and the like formed on the inner surface of a transparent substrate (83) such as glass. The support frame (82) is disposed between the face plate (86) and the rear plate (71). The rear plate (71), the support frame (82), and the face plate (86) are sealed by applying an adhesive such as frit glass or indium to the joint. An envelope (display panel) (88) is constituted by the sealed structure. The conductive film (85) is a member corresponding to the anode (44) described with reference to FIG.

  The envelope (88) can be composed of a face plate (86), a support frame (82), and a rear plate (71). Further, an enclosure (88) having sufficient strength against atmospheric pressure is configured by installing a support (not shown) called a spacer between the face plate (86) and the rear plate (71). can do.

  FIGS. 9A and 9B are specific configuration examples of the phosphor film 84 shown in FIG. In the case of monochrome, the phosphor film (84) is composed of only a monochromatic phosphor (92). In the case of constituting a color image display device, the phosphor film (84) includes at least RGB three primary color phosphors (92) and a light absorbing member (91) disposed between the respective colors. The light absorbing member (91) is preferably a black member. FIG. 9A shows a form in which the light absorbing members (91) are arranged in a stripe shape. FIG. 9B shows a form in which the light absorbing members (91) are arranged in a matrix. In general, the form of FIG. 9A is called “black stripe”, and the form of FIG. 9B is called “black matrix”. The purpose of providing the light-absorbing member (91) is to make inconspicuous the color mixture or the like in the coating portion between the phosphors (92) of the three primary color phosphors necessary for color display, and the phosphor film (84). It is to suppress a decrease in contrast due to external light reflection. The material of the light absorbing member (91) is not limited to this as long as it is not only a material mainly composed of graphite, which is usually used well, but also a material with little light transmission and reflection. Further, it may be conductive or insulating.

  Further, a conductive film (85) called “metal back” or the like is provided on the inner surface side (electron-emitting device (74) side) of the phosphor film (84). The purpose of the conductive film (85) is to improve the brightness by specularly reflecting the light emitted from the phosphor (92) toward the electron-emitting device (74) to the face plate (86). is there. Also, it acts as an anode for applying an electron beam acceleration voltage, and suppresses phosphor damage caused by the collision of negative ions generated in the envelope (88).

  The conductive film (85) is preferably formed of an aluminum film. For the conductive film (85), after the phosphor film (84) is fabricated, the surface of the phosphor film (84) is smoothed (usually called “filming”), and then Al is deposited by vacuum evaporation or the like. It is possible to make it.

  The face plate (86) is provided with a transparent electrode (not shown) made of ITO or the like between the phosphor film (84) and the transparent substrate (83) in order to further increase the conductivity of the phosphor film (84). May be.

  Each electron-emitting device (74) in the envelope (88) is connected to the X-direction wiring (72) and the Y-direction wiring (73) described above with reference to FIG. Therefore, electrons can be emitted from the desired electron-emitting device (74) by applying a voltage through the terminals Dox1 to Doxm and Doy1 to Doyn connected to each electron-emitting device (74). At this time, a voltage of 5 kV to 30 kV, preferably 10 kV to 25 kV, is applied to the conductive film (85) through the high voltage terminal (87). The distance between the face plate (86) and the substrate (71) is set to 1 mm to 5 mm, more preferably 1 mm to 3 mm. In this way, electrons emitted from the selected electron-emitting device are transmitted through the metal back (85) and collide with the phosphor film (84). An image is displayed by exciting and emitting the phosphor (92).

  In the configuration described above, the detailed portions such as the material of each member are not limited to the above-described contents, and are appropriately changed according to the purpose.

  Moreover, an information display reproducing | regenerating apparatus can be comprised using the envelope (display panel) (88) of this invention demonstrated using FIG.

  Specifically, the receiving device, the tuner for selecting the received signal, and the signal included in the selected signal are output to the display panel (88) to be displayed or reproduced on the screen. The receiving device can receive a broadcast signal such as a television broadcast. The signal included in the selected signal indicates at least one of video information, character information, and audio information. It can be said that the “screen” corresponds to the phosphor film (84) in the display panel (88) shown in FIG. With this configuration, an information display / playback apparatus such as a television can be configured. Of course, when the broadcast signal is encoded, the information display / playback apparatus of the present invention can also include a decoder. The audio signal is output to audio reproduction means such as a separately provided speaker and reproduced in synchronization with video information and character information displayed on the display panel (88).

  As a method of outputting video information or character information to the display panel (88) to display and / or reproduce it on the screen, for example, the following can be performed. First, an image signal corresponding to each pixel of the display panel (88) is generated from the received video information and character information. Then, the generated image signal is input to the drive circuit (C12) of the display panel (C11). Based on the image signal input to the drive circuit, the voltage applied from the drive circuit to each electron-emitting device in the display panel (88) is controlled to display an image.

  FIG. 10 is a block diagram of a television apparatus according to the present invention. The receiving circuit (C20), which is a receiver, includes a tuner, a decoder, and the like, and receives satellite signals such as satellite broadcasts and terrestrial waves, data broadcasts via a network, etc., and outputs decoded video data to an I / F. Part (interface part) (C30). The I / F unit (C30) converts the video data into the display format of the display device and outputs the image data to the display panel (C11). The image display device (C10) includes a display panel (C11), a drive circuit (C12), and a control circuit (C13). The control circuit performs image processing such as correction processing suitable for the display panel on the input image data, and outputs the image data and various control signals to the drive circuit (C12). Based on the input image data, the drive circuit (C12) outputs a drive signal to each wiring (see Dox1 to Doxm and Doy1 to Doyn in FIG. 8) of the display panel (C11), and a television image is displayed. . The receiving circuit (C20) and the I / F unit (C30) may be housed in a separate housing from the image display device (C10) as a set top box (STB), or the image display device (C10). May be housed in the same housing.

  Further, the interface can be configured to be connected to an image recording apparatus or an image output apparatus such as a printer, a digital video camera, a digital camera, a hard disk drive (HDD), or a digital video disk (DVD). And if it does in this way, the image recorded on the image recording device can also be displayed on a display panel (C11). In addition, it is possible to configure an information display / playback apparatus (or television) that can process an image displayed on the display panel (C11) as necessary and output the processed image to an image output apparatus.

  The configuration of the information display / reproduction apparatus described here is an example, and various modifications can be made based on the technical idea of the present invention. In addition, the information display / playback apparatus of the present invention can be configured with various information display / playback apparatuses by connecting to a system such as a video conference system or a computer.

  Hereinafter, the present invention will be described in more detail with reference to examples.

Example 1
In this example, an example in which the electron-emitting device described in the first embodiment is created is shown. The configuration of the electron-emitting device of this example is the same as that shown in FIG. Hereinafter, the basic configuration and manufacturing method of the electron-emitting device of this example will be described with reference to FIGS.

(Process-a)
A silicon nitride film having a thickness of 500 nm is formed on the cleaned soda-lime glass as an activation suppressing portion (9) by the CVD method, and a portion corresponding to the region that becomes the activation promoting portion (10) is formed using photolithography. The activation suppressing part (9) is provided by removing it by etching. As a result, a plurality of line-shaped openings that are parallel to each other are provided in the film-like activation suppressing portion. Next, in order to form the activation promoting portion (10), a silicon oxide film having a thickness of 500 nm is formed by the CVD method, and then the silicon oxide film provided on the activation suppressing portion (9) is used by photolithography. To remove. Thereby, the activation suppressing part (9) and the activation promoting part (10) are provided on the substrate 1.

  The activation suppression unit (9) and the activation promotion unit (10) fabricated on the substrate (1) are alternately arranged along the Y direction in the shape of L1 in the X direction and L2 and L3 in the Y direction. Is arranged in multiple. The conditions were assigned so that L2 and L3 were 200 nm, 1 μm, 3 μm, 5 μm, 10 μm, 20 μm, and 100 μm.

  Next, a photoresist mask pattern having openings corresponding to the patterns of the auxiliary electrodes 2 and 3 is formed, and Ti having a thickness of 5 nm and Pt having a thickness of 100 nm are sequentially laminated by vacuum deposition. Thereafter, the photoresist was dissolved in an organic solvent, and the Pt / Ti film was lifted off to form auxiliary electrodes 2 and 3. The distance L between the device electrodes is 20 μm, and the electrode width W is 300 μm (FIG. 2A). In FIG. 2, for the sake of easy understanding, three activation promoting portions (10) each sandwiched between activation suppressing portions (9) are provided between the auxiliary electrodes 2 and 3. Yes. However, in the present embodiment, the maximum number of activation suppression units (9) and activation promotion units (10) are arranged within the range of the auxiliary electrode width W with the above-described values of L2 and L3.

(Process-b)
Subsequently, an organic palladium compound solution was spin-coated on each substrate (1), and then heat-fired. Thus, a conductive film (4) containing Pd as a main element was formed. Subsequently, the conductive film (4) was patterned by photolithography, and the conductive film (4) having a width W ′ was unified to 200 μm. Rs (sheet resistance) of the formed conductive film (4) was 1 × 10 ⁴ Ω / □, and the film thickness was 10 nm.

(Process-d)
Then, each substrate (1) through the steps -a~ step -c then placed in a vacuum apparatus in FIG. 3, was evacuated by a vacuum pump, it reached vacuum degree of 1 × 10 -6 ^Pa, A voltage Vf is applied between the auxiliary electrodes (2, 3) using a power source (41) to perform a forming process. Thus, the gap (7) was formed in the conductive film (4), and the first conductive film (4a) and the second conductive film (4b) were formed (FIG. 2 (c)). The voltage waveform shown in FIG. 4B was used in the forming process.

  In FIG. 4B, T1 and T2 are the pulse width and pulse interval of the voltage waveform. In this embodiment, T1 is 1 msec, T2 is 16.7 msec, and the peak value of the triangular wave is boosted in steps of 0.1 V. Then, the forming process was performed. Further, during the forming process, a resistance measurement pulse having a voltage of 0.1 V was intermittently applied between the auxiliary electrodes (2, 3) to measure the resistance. The forming process was ended when the measured value with the resistance measurement pulse became about 1 MΩ or more.

(Process-e)
Subsequently, an “activation” process was performed. Specifically, tolunitrile was introduced into the vacuum apparatus. Thereafter, a pulse voltage having the waveform shown in FIG. 5A was applied between the auxiliary electrodes (2, 3) under the conditions of a maximum voltage value of ± 20 V, T1 of 1 msec, and T2 of 10 msec. After starting the “activation” process, it was confirmed that the device current (If) started to rise gently, the voltage application was stopped, and the “activation” process was terminated. As a result, carbon films (21a, 21b) were formed (FIG. 2 (d)).

  The electron-emitting device was formed by the above process.

(Process-f)
Next, a “stabilization” process was performed on each electron-emitting device. Specifically, the vacuum device and the electron-emitting device were heated by a heater and maintained at about 250 ° C., and the evacuation in the vacuum device was continued. After 20 hours, the heating by the heater was stopped and the temperature was returned to room temperature, and the pressure in the vacuum apparatus reached about 1 × 10 ⁻⁸ Pa.

  Subsequently, with the measuring apparatus shown in FIG. 3, each element was practically driven, and the emission current Ie was measured for a long time. In practical driving, the distance H between the anode electrode (44) and the electron-emitting device was set to 2 mm, and a potential of 5 kV was applied to the anode electrode (44) from the high voltage power source (43). Further, a rectangular pulse voltage having a peak value of 17 V, a pulse width of 100 μs, and a frequency of 60 Hz was applied between the auxiliary electrodes (2, 3) of each electron-emitting device using a power source (41).

  The emission current Ie of the electron-emitting device of the present example was measured by an ammeter (42), and the fluctuation value of the emission current Ie was measured several times at the same measurement time interval for all the devices. It was obtained by calculating (standard deviation / average value × 100 (%)). Table 1 below shows the fluctuation value of the emission current Ie of each element.

  As is clear from Table 1, when L3 / L1 and L2 / L1 are 0.05 or less, the fluctuation value of the emission current Ie is greatly reduced. This tendency was the same even when the value of L1 was changed.

(Example 2)
In this example, an example in which the RS (sheet resistance) of the conductive film (4) is changed in the electron-emitting device described in the first embodiment is shown. The basic structure of the electron-emitting device according to this example is the same as that shown in FIG. Hereinafter, the manufacturing method of the electron-emitting device of this example will be described with reference to FIGS.

(Process-a)
First, six cleaned quartz substrates (1) are prepared, and a silicon nitride film having a thickness of 200 nm is formed on each substrate (1) as an activation suppressing portion (9) by a CVD method. In the same manner as in Example 1, an activation suppression unit (9) and an activation promotion unit (10) are provided.

  The activation suppression unit (9) and the activation promotion unit (10) fabricated on the substrate (1) are alternately arranged along the Y direction in the shape of L1 in the X direction and L2 and L3 in the Y direction. Is arranged in multiple. L2 and L3 were set to 200 nm.

  On top of this, Ti was formed to a thickness of 5 nm by sputtering, and then Pt was formed to a thickness of 40 nm on Ti. Thereafter, the auxiliary electrodes (2, 3) were patterned on the substrate (1) using photolithography. Five pieces having an interval L1 of 20 μm were produced. The width W (see FIG. 1) of the auxiliary electrodes (2, 3) was 600 μm (FIG. 2 (a)).

(Process-b)
Subsequently, the organic palladium compound solution was spin-coated on the substrate (1) that was subjected to the step-a, and then heat-fired. The concentration of the organic palladium compound and the number of rotations during coating were adjusted, and each of the three types was applied to one substrate so that the film thicknesses were 10 nm and 100 nm. The Rs (sheet resistance) of the conductive film (4) after the formation treatment is 5 × 10 ⁴ Ω / □, 1 × 10 ⁴ Ω / □, and 1 × 10 ³ Ω / □, respectively, for film thicknesses of 5 nm, 10 nm, and 100 nm. Met.

Further, an ITO (In ₂ O ₃ 95%, SnO ₂ 5%) thin film is formed on another substrate (1) that has undergone (Step-a) by sputtering, so that the film thickness becomes 20 nm and 100 nm. In addition, each of two types was formed on one substrate. The Rs (sheet resistance) of the conductive film (4) after the formation was 100Ω / □ and 25Ω / □, respectively, with a film thickness of 20 nm and 100 nm.

  Further, an Au thin film was formed on the remaining one substrate so as to have a film thickness of 100 nm on the remaining substrate (1) having undergone (Step-a) by using an electron beam evaporation method. The Rs (sheet resistance) of the conductive film (4) after formation was 0.8Ω / □.

  Subsequently, the conductive film (4) was patterned by photolithography, and the conductive film (4) having a width W3 was unified to 500 μm.

  Thus, conductive films (4) having different Rs (sheet resistance) were formed on each substrate.

  Subsequently, each substrate (1) having undergone (Step-b) was subjected to the same processing as (Step-c) to (Step-f) described in Example 1 to produce an electron-emitting device.

Subsequently, with the measuring apparatus shown in FIG. 3, each element was practically driven, and the emission current Ie was measured for a long time. In practical driving, the distance H between the anode electrode (44) and the electron-emitting device was set to 2 mm, and a potential of 5 kV was applied to the anode electrode (44) from the high voltage power source (43). Further, a rectangular pulse voltage having a peak value of 17 V, a pulse width of 100 μs, and a frequency of 60 Hz was applied between the auxiliary electrodes (2, 3) of each electron-emitting device using a power source (41).
The emission current Ie of the electron-emitting device of the present example was measured by an ammeter (42), and the fluctuation value of the emission current Ie was measured several times at the same measurement time interval for all the devices. It was obtained by calculating (standard deviation / average value × 100 (%)). Table 2 below shows the fluctuation value of the emission current Ie of each element.

From Table 2, the fluctuation value of the emission current Ie decreased when Rs (sheet resistance) of the conductive film (4) was 1 × 10 ⁴ Ω / □ or more.

(Example 3)
In this example, an electron source is formed by arranging a large number of electron-emitting devices formed by the same manufacturing method as the electron-emitting device prepared in Example 1 described above on a substrate. And it is also an example which created the image display apparatus shown in FIG. 8 using this electron source. The manufacturing process of the image display device created in this embodiment will be described below.

<Auxiliary electrode creation process>
First, a large number of auxiliary electrodes (2, 3) were formed on the substrate 71 (FIG. 11). Specifically, a laminated film of titanium Ti and platinum Pt was formed on the substrate 71 with a thickness of 40 nm, and then patterned by a photolithography method. The distance L1 between the auxiliary electrode (2) and the auxiliary electrode (3) was 20 μm, and the length W was 200 μm.

<Y direction wiring formation process>
Next, as shown in FIG. 12A, a Y-direction wiring (73) mainly composed of silver was formed so as to be connected to the auxiliary electrode (3). The Y-direction wiring (73) functions as a wiring to which a modulation signal is applied.

<Insulating layer formation process>
Next, as shown in FIG. 12B, an insulating layer (75) made of silicon oxide is disposed to insulate the X-direction wiring (72) created in the next step from the Y-direction wiring (73). To do. An insulating layer (75) is disposed under an X-direction wiring (72) described later and so as to cover the Y-direction wiring (73) formed earlier. A contact hole was formed in a part of the insulating layer (75) so that the X-directional wiring (72) and the auxiliary electrode (2) could be electrically connected.

<X direction wiring formation process>
As shown in FIG. 12C, an X-direction wiring (72) mainly composed of silver was formed on the insulating layer (75) formed previously. The X-direction wiring (72) intersects the Y-direction wiring (24) with the insulating layer (75) interposed therebetween, and is connected to the auxiliary electrode (2) at the contact hole portion of the insulating layer (75). This X direction wiring (72) functions as a wiring to which a scanning signal is applied. In this way, a substrate (71) having matrix wiring is formed.

<Conductive film formation process>
A conductive film (4) was formed by an ink jet method between the auxiliary electrode (2) and the auxiliary electrode (3) on the base (71) on which the matrix wiring was formed (FIG. 12D). In this example, an organic palladium complex solution was used as the ink used in the ink jet method. After applying this organic palladium complex solution so as to connect between the auxiliary electrode (2) and the auxiliary electrode (3), the substrate (71) is heated and fired in air to form palladium oxide (PdO). A conductive film 4 was obtained.

  After that, using FIB for the conductive film (4), 50 electrically conductive films (4) having W1 of 1 μm and a distance between adjacent conductive films (4) of 1 μm were separated from all the elements. It was made to form.

  Thereafter, in the same manner as in Example 1, a gap 7 was formed in each conductive film (4), and thereafter, “activation” processing was performed. In the “activation” process, the waveform of the voltage applied to each unit is the same as that shown in the method for producing the electron-emitting device of the first embodiment.

  Through the above steps, a substrate (71) on which the electron source (a plurality of electron-emitting devices) of this example is arranged is formed.

  Next, as shown in FIG. 8, a face plate (86) in which a phosphor film (84) and a metal back (85) are laminated on the inner surface of the glass substrate (83) 2 mm above the substrate (71). ) Was placed via a support frame (82).

  Then, the joint between the face plate (86), the support frame (82), and the substrate (71) was sealed by heating and cooling indium (In), which is a low melting point metal. Moreover, since this sealing process was performed in a vacuum chamber, sealing and sealing were performed simultaneously without using an exhaust pipe.

  In this embodiment, the phosphor film (84) as an image forming member is a phosphor having a stripe shape (see FIG. 9A) for color display. First, black stripes (91) were formed at a desired interval. Subsequently, each color phosphor (92) was applied between the black stripes (91) by a slurry method to produce a phosphor film (84). As the material of the black stripe (91), a material mainly composed of graphite, which is commonly used, is used.

  Further, a metal back (85) made of aluminum was provided on the inner surface side (electron-emitting device side) of the fluorescent film (84). The metal back (85) was produced by vacuum-depositing Al on the inner surface side of the phosphor film (84).

  A desired electron-emitting device was selected through the X-direction wiring and Y-direction wiring of the image display device completed as described above, and a pulse voltage of 17 V was applied. At the same time, when a voltage of 10 kV was applied to the metal back (73) through the high-voltage terminal Hv, a bright and good image with little luminance unevenness and little luminance fluctuation could be displayed for a long time.

  The embodiments and examples described above are merely examples of the present invention, and the present invention does not exclude various modifications of the above-described materials and sizes.

It is the top view and sectional view which show typically the example of composition of the electron-emitting device of the present invention. It is a schematic diagram which shows the outline | summary of the manufacturing method of the electron-emitting element of this invention. It is a schematic diagram which shows an example of the vacuum apparatus provided with the measurement evaluation function of the electron emission element. It is a schematic diagram which shows an example of the pulse applied at the time of a forming process. It is a schematic diagram which shows an example of the pulse applied at the time of an activation process. It is a schematic diagram which shows the electron emission characteristic of the electron-emitting device of this invention. It is a schematic diagram for demonstrating the electron source board | substrate using the electron-emitting element of this invention. It is a schematic diagram for demonstrating the structure of an example of the image display apparatus of this invention. It is a schematic diagram for demonstrating a fluorescent substance film. It is a block diagram of the television apparatus of the present invention. It is a schematic diagram which shows an example of the manufacturing process of the electron source by this invention. It is a schematic diagram which shows an example of the manufacturing process of the electron source by this invention. It is the plane and cross-sectional schematic diagram which show an example of the conventional electron emission element.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate 2, 3 Auxiliary electrode 4a, 4b Conductive film 7 First gap 8 Second gap 9 Activation suppression layer

Claims (7)

A pair of conductive films provided apart from each other in the first direction on the surface of the substrate; and a second that connects the pair of conductive films, includes a gap, and is different from the first direction. An electron-emitting device including a plurality of carbon films provided apart from each other in a direction,
A part of the surface of the substrate is exposed between the plurality of carbon films in the second direction,
The exposed portion is made of a material that suppresses carbon deposition rather than a material that forms a portion of the surface of the substrate and is covered with the plurality of carbon films. An electron-emitting device. The electron-emitting device characterized in that the sheet resistance of the pair of conductive films is 10 ⁴ Ω / □ or more.   The material constituting the exposed portion is aluminum oxide, tantalum oxide, titanium oxide, silicon nitride, aluminum nitride, and the material constituting the portion covered with the plurality of carbon films is 3. The electron-emitting device according to claim 1, wherein the electron-emitting device is a material mainly composed of silicon oxide.   An electron source having a plurality of electron-emitting devices, wherein each of the electron-emitting devices is the electron-emitting device according to any one of claims 1 to 3.   An image display device comprising: an electron source; and a light emitter that emits light when irradiated with electrons emitted from the electron source, wherein the electron source is the electron source according to claim 4. .   An information display / playback device comprising: a receiver that outputs at least one of video information, text information, and audio information included in a received broadcast signal; and an image display device connected to the receiver, An information display / playback apparatus, wherein the display apparatus is the image display apparatus according to claim 5. A pair of conductive films provided apart from each other in the first direction on the surface of the substrate; and a second that connects the pair of conductive films, includes a gap, and is different from the first direction. A plurality of carbon films provided apart from each other in a direction, and an electron-emitting device manufacturing method comprising:
Surfaces provided such that first portions mainly composed of silicon oxide and second portions mainly composed of a material that suppresses carbon deposition compared to silicon oxide are alternately and adjacent to each other in the second direction. Providing the pair of conductive films facing and spaced apart in the one direction on the provided substrate;
In a carbon-containing atmosphere, by repeatedly applying a pulse voltage between the pair of conductive films, provided on each of the plurality of first portions, spaced apart from each other in the second direction, and Forming the plurality of carbon films, each having a gap;
A method for manufacturing an electron-emitting device, comprising:

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