JP2010065287A - Electrolytic treatment apparatus and electrolytic treatment method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electrolytic treatment method by which uniform electrolytic treatment in a substrate surface is achieved by keeping the temperature of an electrolytic solution at a predetermined value, even when a high-resistance porous body is used, this porous body generates heat in accordance with the progress of electrolytic treatment such as electroplating, and the temperature of the electrolytic solution rises. <P>SOLUTION: An electrolytic treatment apparatus is provided, which includes: an anode head 46 containing an anode 58 therein and having a housing 48 whose bottom opening is blocked up with a porous body 50; a cathode portion 32 having a seal ring 34 which is brought into contact with the peripheral part of the surface to be treated of the substrate held by a substrate holding part 30 and seals the peripheral part, and also having a cathode contact 36 to electrify the surface to be treated by contact with the peripheral part; an anode side liquid circulation line 70 through which a temperature-controlled electrolytic solution is supplied and circulated in the housing 48 in such a way that the electrolytic solution is in contact with the porous body 50; and a substrate side liquid circulation line 72 through which the temperature-controlled electrolytic solution is supplied to the space between the porous body 50 and the substrate W and circulated when the porous body 50 is located in an electrolytic treatment position close to the substrate W. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an electrolytic processing apparatus and an electrolytic processing method for performing electrolytic processing on a surface to be processed (surface) of a substrate such as a semiconductor wafer using an electrolytic solution. The electrolytic treatment of the present invention includes electrolytic plating treatment, pre-plating treatment, electrolytic etching treatment, and the like.

  As electronic devices become smaller, faster, and consume less power, patterns in semiconductor devices are also becoming finer and used for wiring as these patterns become finer. Materials have also changed from conventional aluminum and aluminum alloys to copper and copper alloys. The resistivity of copper is 1.37 μΩcm, which is about 37% lower than aluminum (2.65 μΩcm). For this reason, copper wiring can reduce power consumption due to wiring compared to aluminum wiring, and at the same time, it can be miniaturized by equivalent wiring resistance, and further, signal delay can be suppressed by lowering wiring resistance. .

  Copper atoms easily move in silicon and insulating films, and the characteristics of the semiconductor device are disturbed. For this reason, it is necessary to cover the periphery of the copper wiring with a protective layer called a barrier metal. In order to realize a structure in which the entire wiring is covered with a barrier metal, a damascene method in which a wiring material (copper) is embedded in a wiring-shaped trench is widely used. In the damascene method, Ti, TiN, Ta or TaN formed by PVD, CVD or ALD is widely used as a barrier metal, and copper embedding can be performed at higher speed than PVD or CVD. The plating method is generally used.

  When embedding copper in a trench by electrolytic plating, it is widely practiced to form a seed layer (feed layer) with a low resistance on the surface of a barrier metal with a high resistance and to grow a copper plating film from the seed layer surface. It has been broken. As the seed layer, a copper thin film (copper seed layer) formed by a PVD method or the like is generally used. However, a thinner seed layer is required as the wiring becomes finer. For this reason, the film thickness of the seed layer, which was generally about 50 nm, is expected to be 10-20 nm or less in the future.

  On the other hand, an attempt has been made to directly copper-plat the surface of a seed layer made of Ru (ruthenium) without a copper seed layer. One reason for this is the instability of the copper material in the atmospheric environment. That is, copper is easily oxidized in the atmosphere. A natural oxide film (copper oxide) of several angstroms to several tens of angstroms is formed on the surface of the copper seed layer. Copper oxide does not conduct electricity and is easily dissolved in an acidic plating solution.

  The applicant has proposed a plating apparatus in which an ion exchange resin or porous neutron is disposed between the substrate and the anode so as to isolate the plating solution on the anode side and the substrate side (see Patent Document 1). . Also, a porous body is disposed between the substrate and the anode, and plating solutions (electrolytic solutions) having different compositions are introduced into the anode side region and the substrate (cathode) side region that are partitioned vertically by the porous body. (See Patent Documents 2 and 3). Furthermore, the passive layer formed on the surface of the ruthenium film is electrochemically removed by electrolytic treatment, and then copper is directly formed on the surface of the ruthenium film by electrolytic copper plating. (See Patent Document 4).

JP 2001-49498 A JP 2004-353061 A JP 2005-146398 A JP 2008-98449 A

  With the recent miniaturization of substrate wiring, the thickness of the seed layer made of copper or Ru has become thinner. In particular, in the case of the seed layer made of Ru, the sheet resistance that was 1 Ω / sq or less in the copper seed layer has been reduced. It is considered to be 100Ω / sq or more. As a result, when a plating film is formed on the surface of the seed layer, the amount of electrolysis increases at the peripheral portion of the substrate and the film thickness of the plating film increases, and the amount of electrolysis decreases at the center of the substrate and the film of the plating film decreases. As the thickness becomes thinner and the influence of the terminal effect becomes larger, it has become difficult to perform uniform plating on the substrate surface.

  In order to improve the in-plane unevenness of the plating film thickness due to the effect of this terminal effect, it has been developed to perform a process such as plating by sandwiching a porous body as a resistor between the anode and the substrate (cathode). The resistance value required for the porous body is also increasing in proportion to the increase in the electrical resistance of the plating base film. For example, when a plating process is performed using a porous body having a large resistance value, the porous body generates heat, and the temperature of the plating solution rises with this heat generation. For example, when a plating film having a thickness of 2 μm is formed on a surface of a 300 mm substrate having a seed layer made of Ru having a sheet resistance of 100 Ω / sq using an alumina porous body having a porosity of 6%, as described below. The porous body generates heat of about 100 kcal, and the temperature of the plating solution located on the anode side across the porous body rises by about 50 ° C. during the plating process.

  As described above, when the temperature of the plating solution rises during the plating process, there are problems such as the influence on the embedding performance of the plating film and the influence of the decomposition of the additives generally contained in the plating solution.

  For example, in order to fill a copper plating film without voids by electrolytic plating in the trench of a φ300 mm substrate in which trenches having a width of 0.1 μm are formed at intervals of 0.1 μm, the liquid temperature is kept at 20 ° C. or less. It is necessary to perform electrolytic plating using a plating solution. That is, when a copper plating film 102 is formed on the surface of the substrate W having the trench 100 using a plating solution having a liquid temperature of 20 ° C. or less, and the copper plating film 102 is embedded in the trench 100, FIG. As shown to (a), the copper plating film 102 without a void can be embedded in the trench 100 inside. However, when a plating solution having a liquid temperature of 25 ° C. is used, voids 104 are generated inside the copper plating film 102 embedded in the trench 100 as shown in FIG. Further, when a plating solution having a liquid temperature of 45 ° C. is used, the copper plating film 102 does not reach the inside of the trench 100 as shown in FIG. This is presumably because the additive contained in the plating solution becomes cloudy beyond the cloud point, and the plating solution cannot be reused or continuously used, and at the same time the embedding performance deteriorates.

  FIG. 2 shows the results of evaluation of the plating solution temperature dependency in the coupon test for the embedding performance in the initial stage of plating. Here, as a standard for judging the embedding performance at the initial stage of plating, there are an overplate ratio (OP / t) and a bottom-up property (BU) in addition to the generation of voids. The overplate ratio is a ratio (OP / t) of the film thickness (OP) of the plating film formed in the field part without wiring and the film thickness (t) of the plating film formed in the wiring part. In order to reduce the amount of subsequent dishing, the closer to 1, the better. The bottom-up property is an index indicating how thick the plating film is formed in the trench as compared with the outside of the trench, and the larger the value, the better.

  From FIG. 2, the plating solution used in this test has good overplate characteristics when the liquid temperature is in the range of 15 to 25 ° C., and good bottom-up characteristics when the liquid temperature is in the range of 15 ± 2 ° C. It can be seen that the embedding performance is particularly improved by keeping the temperature of the plating solution used for the plating solution at 15 to 17 ° C. The liquid temperature at which the embedding characteristic is optimal varies depending on the components of the plating solution, and in actual operation, an appropriate liquid temperature is generally 10 to 25 ° C.

  The present invention has been made in view of the above circumstances. Even if the porous body generates heat due to electrolytic treatment such as electrolytic plating by using a porous body having high resistance (low porosity), electrolysis is possible. It is an object of the present invention to provide an electrolytic processing apparatus and an electrolytic processing method capable of performing uniform electrolytic treatment within a substrate surface by maintaining the liquid temperature at a predetermined value.

  As a result of intensive studies, the present inventor has obtained the following knowledge. That is, by performing an electrolytic treatment such as plating using a porous body having a high resistance, a uniform electrolytic treatment can be performed over the entire substrate surface even for a substrate having a high electrical resistance of the plating base film. When the plating process is continued, the porous body generates heat and the porous body and the liquid temperature rise. However, by performing electrolytic treatment while supplying and circulating an electrolytic solution with controlled temperature in the region located on the anode side and the substrate (cathode) side across the porous body, the process performance is not affected. The electrolytic treatment can be performed with an electrolytic solution having a liquid temperature.

  That is, an alumina porous body having a porosity of 6% is used, and a copper sulfate plating solution is circulated on the anode side and the substrate (cathode) side between which the porous body is sandwiched, and from Ru having a sheet resistance of 100 Ω / sq. A φ300 mm substrate having a seed layer was plated with a thickness of 2 μm, and the temperature of the upper surface of the porous body was measured as a change in the temperature of the plating solution on the anode side. When a partition was placed at a position 4 mm from the porous body on the anode side, the amount of circulating plating solution was 15 L / min, and the temperature of the plating solution was controlled by the chiller unit, it was about 100 kcal from the porous body. There was a fever.

  At this time, as shown in FIG. 3, when the plating solution is not circulated, the temperature of the plating solution located on the anode side with the porous body interposed therebetween rises by about 50 ° C., but at the flow rate of 5 L / min, the anode side When the plating solution is circulated, the temperature of the anode-side plating solution rises by about 18 ° C. When the anode-side plating solution is circulated at a flow rate of 9 L / mim, the temperature of the anode-side plating solution is about 4 ° C. To rise. From these, it is understood that when a porous body having a porosity of 6% is used, the increase in the temperature of the plating solution can be suppressed to 2 ° C. or less by circulating the plating solution at a flow rate of about 10 L / min. Further, when a porous body having a porosity of 10% is used, an increase in the temperature of the plating solution can be suppressed to 2 ° C. or less by circulating the plating solution at a flow rate of 5 L / min. The temperature of the raised porous body returns to the original temperature by continuing to circulate the plating solution, but it takes 65 seconds for the porous body to return to the original temperature when the plating solution is circulated at a flow rate of 5 L / min. It is confirmed that it takes 25 seconds when the flow rate is 9 L / min.

  The present invention has been made on the basis of the above-described knowledge, and the invention according to claim 1 is arranged such that a substrate holding portion for horizontally holding a substrate and a vertically movable portion above the substrate holding portion. In addition, the anode is immersed in the electrolytic solution and the anode is housed therein, and the anode head having a housing whose lower end opening is closed with a porous body, and the peripheral surface of the target surface of the substrate held by the substrate holder A cathode ring having a seal ring that seals the peripheral edge, and a cathode contact that contacts the peripheral edge and energizes the surface to be processed; and an electrolyte whose temperature is controlled in the housing. An anode-side liquid circulation line that is supplied and circulated so as to be in contact with the substrate, and an electrolysis in which the temperature is controlled between the porous body and the substrate when the porous body is in an electrolytic treatment position close to the substrate. Supply liquid An electrolytic treatment apparatus characterized by having a substrate side liquid circulation line for circulating.

  Electrolytic treatment is performed by supplying and circulating an electrolyte solution that controls the temperature to the region located on the anode side and substrate (cathode) side across the porous body, thereby electrolyzing the porous body that has generated heat due to the electrolytic treatment. While cooling with the liquid, the liquid temperature of the electrolytic solution can be maintained at the optimum temperature for the process. In addition, by circulating the electrolytic solution, the gas generated from the anode and the substrate (cathode) during the electrolytic treatment can be removed.

  According to a second aspect of the present invention, the anode-side liquid circulation line and the substrate-side liquid circulation line are configured to individually circulate an electrolyte whose temperature is individually adjusted via a temperature regulator. The electrolytic treatment apparatus according to claim 1.

  In this way, by making the anode side liquid circulation line and the substrate side liquid circulation line independent from each other, it is of course necessary to circulate the electrolyte solution at the same temperature through the anode side liquid circulation line and the substrate side liquid circulation line. Depending on the situation, it is possible to circulate by flowing electrolytes of different temperatures. In addition, since the electrolyte flowing along the anode-side circulation line and the electrolyte flowing along the substrate-side circulation line do not mix with each other, for example, when performing plating, along the anode-side circulation line that does not affect the plating As the flowing electrolytic solution, any electrolytic solution other than the plating solution, such as sulfuric acid, can be used, so that the additive contained in the plating solution is not consumed on the anode, and the electrolytic solution can be managed. It is easy and can reduce costs.

  According to a third aspect of the present invention, in the anode side liquid circulation line and the substrate side liquid circulation line, the anode side liquid circulation line and the substrate side liquid circulation line are located at positions downstream of the porous body. 3. The electrolytic processing apparatus according to claim 1, further comprising a temperature sensor configured to detect a temperature of the electrolyte flowing along.

  The electrolyte flowing along the liquid circulation line is heated by passing through the vicinity of the porous body, which is a heating element, and the temperature rises. For this reason, the temperature sensor is arranged on the downstream side of the porous body to efficiently measure the temperature of the electrolyte heated by the porous body, and the temperature controller or flow rate is measured based on the measured value of the liquid temperature sensor. The electrolyte temperature can be controlled by feedback control.

The invention according to claim 4 is characterized in that a gas-liquid separation tank is installed in each of the anode-side liquid circulation line and the substrate-side liquid circulation line. It is.
As a result, the gas generated from the anode and the substrate (cathode) can be dissolved and recovered in the electrolytic solution, separated in the gas-liquid separation tank, and discharged to the outside.

The invention according to claim 5 is the electrolytic processing apparatus according to any one of claims 1 to 4, wherein the anode is an insoluble anode.
By using an insoluble anode as the anode, it is possible to eliminate the influence of the black film and to reduce the cost due to long-term use.

  According to a sixth aspect of the present invention, there is provided the electrolytic treatment according to any one of the first to fourth aspects, wherein a rectifying plate that divides the space in the housing vertically is disposed inside the housing. Device.

  A rectifying plate that divides the space in the housing up and down is arranged inside the housing, and the flow path in the housing is narrowed, so that the electrolyte that is supplied and circulated in the housing is a heating element. It is possible to increase the cooling effect of the electrolytic solution on the heating element (porous body) so that the circulating flow rate of the electrolytic solution is reduced. In addition, for example, by reducing the height of the housing as much as possible, or by arranging the electrolyte inlet and the electrolyte outlet of the housing at positions facing each other, the electrolyte can flow in the vicinity of the porous body. it can.

  The invention according to claim 7 is characterized in that a distance between the porous body and the substrate when the porous body is in an electrolytic treatment position close to the substrate is 0.1 to 30 mm. Item 7. The electrolytic treatment apparatus according to any one of Items 1 to 6.

  By changing the distance between the substrate and the porous body, the electrolytic characteristics can be affected. By setting the distance between the porous body and the substrate to 0.1 to 30 mm, the electrolytic characteristics and the substrate side liquid circulation line can be changed. The temperature of the electrolyte flowing along can be adjusted. The narrower the gap between the porous body and the substrate, the higher the cooling effect of the electrolyte flowing along the substrate-side liquid circulation line on the porous body.

  The invention according to claim 8 is characterized in that a seed layer which is a white metal element is provided on the surface to be processed of the substrate, and the porosity of the porous body is 19% or less. The electrolytic treatment apparatus according to any one of 1 to 7.

  For example, when a white metal element such as Ru (ruthenium) is used as a seed layer, the sheet resistance of the seed layer is considerably increased, but by using a porous body having a porosity of 19% or less, preferably 10% or less. The effect of the terminal effect can be reduced by increasing the electrical resistance of the porous body when the electrolytic solution is contained therein to such an extent that the sheet resistance of the seed layer can be ignored.

  The invention according to claim 9 is directed to an anode head having a housing in which an anode is immersed in an electrolytic solution and whose lower end opening is closed with a porous body, and an electrolytic treatment position where the porous body is close to the substrate. The electrolyte is placed in the housing, and the temperature-controlled electrolyte is supplied and circulated so that the electrolyte is in contact with the porous body, and the temperature is set between the porous body and the substrate. In the electrolytic processing method, the substrate is subjected to electrolytic treatment by applying a voltage between the substrate and the anode while supplying and circulating the controlled electrolytic solution.

  The invention according to claim 10 is a plating solution as an electrolytic solution to be supplied and circulated between the porous body and the substrate, and a plating solution other than a plating solution or a plating solution as an electrolytic solution to be supplied and circulated in the housing. The electrolytic treatment method according to claim 9, wherein the electrolytic treatment is performed using each of the electrolytic solutions.

  As an electrolytic solution to be supplied and circulated in the housing, an additive other than the plating solution, for example, sulfuric acid, is used for the plating treatment, so that the additive contained in the plating solution is consumed on the anode. As a result, the electrolyte solution can be easily managed and the cost can be reduced.

  In the invention according to claim 11, the temperature T of the plating solution supplied and circulated between the porous body and the substrate is maintained at 10 ° C. <T ≦ 25 ° C. at the initial stage of plating, The electrolytic treatment method according to claim 10, wherein the plating treatment is continued while the liquid temperature is kept below the cloud point of the additive contained in the plating solution.

  This improves the embedding characteristics at the initial stage of plating and prevents the additives such as surfactants contained in the plating solution from becoming below the cloud point while continuing the plating process. Thus, deterioration of the embedding characteristics can be prevented. In the initial stage of plating, the temperature of the plating solution is preferably 13 to 20 ° C, more preferably 15 to 17 ° C. The cloud point of an additive such as a surfactant contained in the plating solution varies depending on the type of the additive and may be 30 ° C. or 25 ° C.

  According to the present invention, the electrolyte solution on the anode side and the substrate (cathode) side is circulated during the electrolytic treatment, so that even if the porous body generates heat by using the porous body having high resistance, the porous body Stable electrolytic treatment can be performed by controlling the temperature of the electrolytic solution to a temperature that does not affect the process performance while cooling the body with the electrolytic solution. In addition, by circulating the electrolytic solution, the gas generated on the anode or the substrate (cathode) during the electrolytic treatment can be removed by the electrolytic solution. In particular, the embedding characteristics can be improved by using the plating treatment and maintaining the temperature of the plating solution at the initial stage of plating at 15 to 17 ° C. most preferably.

  Hereinafter, an electrolytic treatment apparatus according to an embodiment of the present invention applied to an electrolytic plating apparatus using a plating solution as an electrolytic solution will be described. This electrolytic plating apparatus (electrolytic processing apparatus) is used for forming a wiring made of copper by performing copper plating on the surface of a seed layer made of Ru (ruthenium) formed on a substrate surface, for example. In addition, the electrolytic treatment apparatus of this invention can also be applied to the plating pretreatment apparatus which performs a plating pretreatment, the electrolytic etching apparatus which performs electrolytic etching, etc. by selecting arbitrarily the electrolyte solution to be used.

With reference to FIG. 4, an example in which a copper wiring is formed using Ru as a seed layer will be described. First, as shown in FIG. 4A, an insulating film (interlayer insulating film) 2 made of SiO ₂ or Low-K material is deposited on a conductive layer 1a on a semiconductor substrate 1 on which a semiconductor element is formed, A via W 3 and a trench 4 as wiring recesses are formed in the insulating film 2 by lithography / etching technique, and a substrate W on which a seed layer 5 made of Ru is formed is prepared.

  4B, copper plating is performed on the surface of the substrate W to fill the via hole 3 and the trench 4 with copper, and a copper plating film 6 is deposited on the insulating film 2. As shown in FIG. Thereafter, the surface of the copper plating film 6 filled in the via hole 3 and the trench 4 and the insulating film 2 are removed by chemical mechanical polishing (CMP) to remove the copper plating film 6 and the seed layer 5 on the insulating film 2. The surface of the surface is made substantially flush. Thereby, as shown in FIG. 4C, a wiring made of the copper plating film 6 is formed inside the insulating film 2.

  FIG. 5 shows a plan layout view of a substrate processing apparatus provided with an electrolytic plating apparatus (electrolytic processing apparatus) according to an embodiment of the present invention. As shown in FIG. 5, the substrate processing apparatus is provided with a rectangular apparatus frame 12 having a control panel 10. Inside the apparatus frame 12, there are two load / unload sections 14, two bevel etching / back surface cleaning apparatuses 16, a substrate station 18, a rinse / drying apparatus 20, which carry in a substrate cassette containing a plurality of substrates. One plating pretreatment device 22 and four electrolytic plating devices 24 are arranged. Further, the first transfer robot 26 is located between the loading / unloading unit 14, the bevel etching / back surface cleaning device 16, the substrate station 18 and the rinsing / drying device 20, and the substrate station 18, the rinsing / drying device 20, and the plating. The second transfer robots 28 are movably disposed at positions sandwiched between the pretreatment device 22 and the electroplating device 24, respectively.

  Prior to the electrolytic copper plating by the electrolytic plating apparatus 24, the plating pretreatment apparatus 22 electrochemically removes the passive film (ruthenium oxide) on the surface of the ruthenium film that serves as a seed layer during electrolytic copper plating by electrolytic treatment. Is for.

  6 and 7 show an outline of the electrolytic plating apparatus 24. FIG. As shown in FIGS. 6 and 7, the electroplating apparatus 24 includes a substrate holding unit 30 that can move up and down and rotate, holding the substrate W detachably horizontally with the surface (surface to be processed) facing upward, A cathode portion 32 is disposed above the substrate holding portion 30. When the substrate W held by the substrate holding part 30 is raised, the cathode part 32 comes into pressure contact with the upper surface of the peripheral edge of the substrate W and seals the ring-like seal ring 34 on the outside of the seal ring 34. A cathode contact 36 is provided in contact with the seed layer 5 (see FIG. 4) on the upper surface of the peripheral edge of the substrate W and energizes the seed layer 5. Thereby, when the substrate holding part 30 holding the substrate W is raised and the upper surface of the peripheral edge of the substrate W is sealed by the seal ring 34, the cathode contact 36 is positioned outside the seal ring 34, so that the cathode contact 36. Does not come into contact with the plating solution. The cathode contact 36 is connected to a conductor 40 a extending from the cathode of the plating power source 38.

  In this example, the seal ring 34 and the cathode contact 36 are configured to rotate integrally with the substrate holding unit 30 while being in contact with the upper surface of the peripheral edge of the substrate W held by the substrate holding unit 30. On the upper surface of the seal ring 36 of the cathode portion 32, there is a stopper 42 that mechanically restricts the lowering of the cathode head 46 described below, and the plating solution that is located outside the stopper 42 and reaches the upper surface of the stopper 42 flows out. A ring-shaped dam member 44 for damming is attached.

  Located above the cathode portion 32, the anode head 46 is disposed so as to be movable and vertically movable between a position immediately above the substrate holding portion 30 and a side retracted position. The anode head 46 includes a bottomed cylindrical housing 48 that opens downward, and a porous body 50 that is disposed and fixed so as to be fitted into the lower end opening of the housing 48 and close the opening. A seal member 52 made of, for example, an O-ring is interposed between the housing 48 and the porous body 50 to prevent the plating solution from leaking. Thus, the anode chamber 54 is partitioned in the housing 48 by closing the lower end opening of the housing 48 with the porous body 50.

  A band-shaped shield ring 56 is wound around the outer peripheral side surface of the porous body 50 so as to surround it, thereby preventing current from flowing from the outer peripheral side surface of the porous body 50. Examples of the material of the shield ring 56 include a stretchable material such as fluorine rubber.

  In the anode chamber 54 of the anode head 46, an anode 58 made of, for example, an insoluble anode obtained by coating iridium oxide on titanium is disposed. The anode 58 is connected to a conductive wire 40 b extending from the anode of the plating power source 38. Thus, by using an insoluble anode as the anode 58, it is possible to eliminate the influence of the black film and reduce the cost due to long-term use.

  The porous body 50 is made of, for example, a porous ceramic such as alumina, SiC, mullite, zirconia, titania, cordierite or the like, a hard porous body such as a sintered body of polypropylene or polyethylene, or a composite thereof. The porosity of the porous body 50 is generally 30% or less, preferably 19% or less, and more preferably 10% or less. Then, by containing the plating solution inside the porous body 50, that is, the porous body 50 itself is an insulator, but the plating solution enters the inside in a complicated manner, and a considerably long path is followed in the thickness direction. By making it, it is comprised so that it may have an electrical conductivity smaller than the electrical conductivity of a plating solution.

  Thus, when the porous body 50 is disposed in the opening of the housing 48 and a large resistance is generated by the porous body 50, the sheet resistance of the seed layer is formed when a copper plating film is formed on the surface of the seed layer. Thus, a plating film with improved in-plane uniformity can be formed by reducing the in-plane difference in current density due to the electrical resistance of the surface of the seed layer.

  On the lower surface of the housing 48 of the anode head 46, when the anode head 46 is lowered to a predetermined position and the housing 48 is brought into contact with the stopper 42 to stop the anode head 46, the space between the housing 48 and the stopper 42 is maintained. A sealing member 60 made of, for example, an O-ring is attached.

  The porosity of the porous body 50 used for the purpose of increasing the electrical resistance by containing a plating solution in such an interior is generally 30% or less, but is made of Ru (ruthenium) as shown in FIG. When an attempt is made to form a copper plating film on the surface of the seed layer 5, the sheet resistance of the seed layer 5 is considerably higher than that of the copper seed layer. In such a case, by using a porous body 50 having a porosity of 19% or less, preferably 10% or less, the electrical resistance of the porous body 50 when the plating solution is contained inside is used. The influence of the terminal effect can be reduced by increasing the sheet resistance of the seed layer 5 to a negligible level.

  When the plating process is performed using the porous body 50 having a porosity of 19% or less, preferably 10% or less, the porous body 50 generates heat during the plating process. The liquid temperature rises. Therefore, in this example, the temperature of the plating solution is maintained at the optimum temperature for the process while cooling the porous body 50 with the plating solution supplied up and down with the porous body 50 interposed therebetween.

That is, in this example, an adjustment plate 62 made of, for example, a porous body that divides the anode chamber 54 vertically into the anode chamber 54 is disposed between the porous body 50 and the anode 58. anode solution circulation line 70 for supplying the anode side plating solution Q ₁ circulation between the porous body 50 and the adjustment plate 62 is provided. Further, when the cathode head 46 is lowered and the porous body 50 is positioned at a plating position where the porous body 50 is close to the substrate W, the substrate-side plating solution Q ₂ is interposed between the substrate W and the porous body 50. A substrate (anode) side liquid circulation line 72 for supplying and circulating the liquid is provided.

  That is, on one end side of the housing 48 of the anode head 46, there is an inlet port 48 a that opens to the upper surface of the housing 48, bends in a bowl shape, and is connected to the space sandwiched between the porous body 50 and the adjustment plate 62. On the end side, there are provided outlet ports 48b that open on the upper surface of the housing 48, bend in a bowl shape, and connect to a space sandwiched between the porous body 50 and the adjusting plate 62. The plating solution tank 74 and the inlet-side port 48a are connected by an anode-side solution supply line 78 provided with a solution feeding pump 76 in the middle, and the plating solution tank 74 and the outlet-side port 48b are internally connected to the gas-liquid separation tank 80. Are connected by an anode side liquid return line 82. An oxygen gas exhaust pipe 84 that extends from the exhaust port 48 c and exhausts oxygen in the anode chamber 54 is connected to the anode-side liquid return line 82 on the upstream side of the gas-liquid separation tank 80. The plating solution tank 74 is connected with a chiller unit 86 as a temperature controller for adjusting the temperature of the plating solution inside.

Thus, by the actuation of the feeding pump 76, sandwiched between a porous body 50 and the adjustment plate 62 the plating solution in the plating solution tank 74 to adjust the temperature, for example at a constant chiller unit 86 as an anode side plating solution Q ₁ An anode-side liquid circulation line 70 is configured to supply and circulate to these areas.

  On the other hand, one end of the housing 48 of the anode head 46 has an inlet port 48d through the peripheral wall of the housing 48, and an outlet port 48d extending through the peripheral wall of the housing 48 in the other end. Is provided. The plating solution tank 74 and the inlet-side port 48c are connected by a substrate-side solution supply line 90 in which a first solution-feeding pump 88a is installed on the way, and the plating solution tank 74 and the outlet-side port 48d are connected to the second feeding port. The liquid pump 88b and the gas-liquid separation tank 92 are connected by a substrate side liquid return line 94 provided.

As a result, the plating solution in the plating solution tank 74 whose temperature is adjusted to be constant, for example, by the chiller unit 86 in accordance with the driving of the first solution pump 88a and, if necessary, the second solution pump 88b, is transferred to the substrate side. plating solution Q substrate (cathode) side liquid circulation line 72 for circulating and supplying the region between the substrate W and the porous body 50 as a ₂ is formed.

  As described above, the anode side liquid circulation line 70 and the substrate side liquid circulation line 72 are provided, and the plating solution whose temperature is controlled is supplied to each region on the anode side and the substrate (cathode) side sandwiching the porous body 50 and circulates. By performing the plating process while the temperature is reduced, the temperature of the plating solution can be maintained at the optimum temperature for the process while cooling the porous body 50 that has generated heat during the plating process with the plating solution. In addition, by providing the gas-liquid separation tanks 80 and 92 in the anode-side liquid circulation line 70 and the substrate-side liquid circulation line 72, gas generated from the anode 58 and the substrate (cathode) W during the plating process is contained in the plating solution. It can be dissolved and recovered, separated in gas-liquid separation tanks 80 and 92, and discharged to the outside.

  At this time, the flow rate of the plating solution circulated in both the anode-side liquid circulation line 70 and the substrate-side liquid circulation line 72 is an alumina porous body having a porosity of 6% as the porous body 50, and a sheet of 100Ω / sq. When plating is performed on a φ300 mm substrate having a Ru seed layer having resistance, when an alumina porous body having a porosity of 10% is used as the porous body 50 at a rate of about 10 L / min or more, for example, 15 L / min Is about 5 L / min or more.

  The plating solution tank 74 is provided with a temperature sensor 96a for detecting the temperature of the plating solution inside. Further, the anode-side liquid circulation line 70 and the substrate-side liquid circulation line 72 are located on the downstream side of the porous body 50 and the plating solution flowing along the anode-side liquid circulation line 70 and the substrate-side liquid circulation line 72. Temperature sensors 96b and 96c for detecting the liquid temperature are respectively installed. These temperature sensors 96a, 96b, 96c are made of, for example, thermocouples. Based on the measured values of the temperature sensors 96a, 96b and 96c, the chiller unit (temperature controller) 86 and the liquid feed pumps 76, 88a and 88b are feedback-controlled to control the temperature of the plating solution. ing.

  The plating solution flowing along the anode-side liquid circulation line 70 and the substrate-side liquid circulation line 72 is heated by passing through the vicinity of the porous body 50 that is a heating element, and the temperature rises. For this reason, the plating solution heated by the porous body 50 is provided by installing the temperature sensors 96b and 96c at positions where the anode side liquid circulation line 70 and the substrate side liquid circulation line 72 are arranged downstream of the porous body 50. Can be measured efficiently.

  In this example, a rectifying plate 62 that divides the space in the housing 48 up and down is arranged inside the housing 48 so that the flow path constituting the anode-side liquid circulation line 70 inside the housing 48 is narrowed. . As a result, the plating solution supplied and circulated in the housing 48 flows closer to the porous body 50, which is a heating element, thereby increasing the cooling effect of the plating solution on the porous body (heating element) 50. The circulating flow rate of the plating solution can be reduced.

  In this example, the inlet port 48a and the outlet port 48b provided in the housing 48 of the anode-side liquid circulation line 70 allow the plating solution supplied in the housing 48 to flow uniformly along the surface of the porous body 50, thereby causing In order to cool the mass body 50 efficiently, two each are provided at positions located on the peripheral edge of the porous body 50 with the center of the porous body 50 interposed therebetween as shown in FIG.

  As shown in FIG. 9, one circular inlet port 48 a, for example, and a peripheral portion of the porous body 50 are positioned at a peripheral portion of the porous body 50 across the center of the porous body 50. An outlet port 48b extending in a slit shape may be provided.

Next, the operation of the electrolytic plating apparatus 24 will be described.
First, when the substrate holding unit 30 is in the lowered position, the substrate W is held horizontally on the upper surface of the substrate holding unit 30 with the surface (surface to be processed) facing upward. Then, the substrate holding unit 30 is raised, the upper peripheral edge of the substrate W is brought into pressure contact with the seal ring 34, and the cathode contact 36 is simultaneously brought into contact with the seed layer 5 (see FIG. 4) at the upper peripheral edge of the substrate W.

On the other hand, on the cathode head 46 side, a plating solution (anode-side plating solution Q ₁ ) is put in the anode chamber 54, and if necessary, the plating solution (anode-side plating solution Q is passed through the anode-side solution circulation line 70. ₁ ) Circulate. Then, the anode head 46 that has been in the retracted position is moved to a position directly above the substrate holding unit 30. In this state, the anode head 46 is lowered, and the seal member 60 attached to the lower surface of the housing 48 is pressed against the upper surface of the stopper 42 to stop the anode head 46. The space | interval of the board | substrate W at this time and the porous body 50 is 0.1-3 mm, for example, Preferably it is about 0.5-2 mm.

In this state, a plating solution (anode-side plating solution Q ₁ ) whose temperature is controlled at a constant temperature of 15 ° C. by the chiller unit 86 is sandwiched between the porous body 50 and the adjusting plate 62 through the anode-side solution circulation line 70. A plating solution (substrate-side plating solution Q ₂ ) whose temperature is controlled at a constant temperature of, for example, 15 ° C. by the chiller unit 86 is passed through the substrate-side solution circulation line 72 and the porous body. Supply and circulate to the area between 50. In this way, the initial plating is performed using the seed layer 5 made of Ru as the cathode by connecting the cathode of the plating power source 38 to the cathode contact 36 and the anode to the anode 58 while circulating the plating solution whose temperature is controlled. . FIG. 6 shows a state in which this initial plating is performed.

  During the initial plating, as described above, it is most preferable to maintain the temperature of the plating solution at 15 to 17 ° C. in order to improve the embedding characteristics, and the temperature of the plating solution is kept constant at 15 ° C. Control and set both the circulation flow rate of the plating solution in the anode side solution circulation line 70 and the substrate side circulation line 72 to about 5 L / min to suppress the rise in the solution temperature during the plating process to 2 ° C. or less. So we can meet this demand.

  That is, from the Ru having a sheet resistance of 100 Ω / sq without setting the interval between the substrate W and the porous body 50 to 0.5 mm and using a porous body with a porosity of 6% without circulating the plating solution. When initial plating with a film thickness of 80 nm is performed on a φ300 mm substrate having a seed layer, the temperature of the plating solution rises by about 5.3 ° C. as indicated by a point A in FIG. When the distance between the substrate W and the porous body 50 is set to 0.5 to 2 mm and a similar plating is performed using a porous body having a porosity of 7%, as shown by a curve B in FIG. The liquid temperature rises by about 2.2 to 4.5 ° C.

  On the other hand, the gap between the substrate W and the porous body 50 is set to 0.5 mm, and a porous body having a porosity of 6% is used, and the anode and substrate (cathode) side plating are sandwiched between the porous bodies. When initial plating with a film thickness of 80 nm is performed on a φ300 mm substrate having a seed layer made of Ru having a sheet resistance of 100 Ω / sq while circulating the liquid at a flow rate of 5 L / min, a point C is shown in FIG. As described above, the temperature of the plating solution rises by about 1.4 ° C. When the distance between the substrate W and the porous body 50 is set to 0.5 to 2 mm and a similar plating is performed using a porous body having a porosity of 7%, as shown by a curve D in FIG. The liquid temperature rises by about 0.1 to 1.0 ° C. Thereby, the raise of the liquid temperature of a plating solution can be suppressed to 2 degrees C or less.

  When plating onto a high resistance substrate such as Ru, the distance between the substrate W and the porous body 50 should be narrow in order to maintain the uniformity of the initial plating. In addition, when plating on an actual φ300 mm substrate, the surface temperature of the substrate cannot be directly measured, but the surface temperature of the substrate can be indirectly monitored by monitoring the temperature of the plating solution immediately after passing over the substrate. Can be measured.

  After the initial plating film having a thickness of 100 nm, for example, 80 nm, is formed on the surface of the seed layer 5 made of Ru by this initial plating, the distance between the substrate W and the porous body 50 is, for example, 3 to 30 mm. Then, the cathode head 46 is raised. In this state, similarly to the above, the plating solution whose temperature is controlled is supplied to the region sandwiched between the porous body 50 and the adjusting plate 62 through the anode-side liquid circulation line 70 and circulated. Through the circulation line 72, a plating solution whose temperature is controlled is supplied and circulated in a region sandwiched between the substrate W and the porous body 50, and the cathode of the plating power source 38 is connected to the cathode contact 36 and the anode is connected to the anode 58, respectively. Then, late plating is performed on the surface of the initial plating film. FIG. 7 shows a state in which this late plating is performed.

  Thus, the in-plane uniformity of the plating film formed on the surface of the substrate W is adjusted by performing the late plating with the interval between the substrate W and the porous body 50 being increased to, for example, 3 to 30 mm. Can do.

  When this latter plating is performed, the temperature of the plating solution is controlled so as to be lower than the cloud point of an additive such as a surfactant contained in the plating solution. In other words, when the temperature of the plating solution exceeds the cloud point of an additive such as a surfactant contained in the plating solution, the plating solution becomes cloudy and the plating solution cannot be reused or continuously used, and at the same time, the embedding performance is particularly deteriorated. . The cloudy temperature of the additive varies depending on the type of plating solution, for example, it may be 30 ° C or 25 ° C. Thus, by controlling the temperature of the plating solution so as to be below the cloud point of additives such as surfactants contained in the plating solution, it is possible to prevent the plating solution from deteriorating and to continuously use the plating solution. .

  When the thickness of the plating film reaches a predetermined thickness, the application of the plating voltage between the seed layer 5 and the anode 58 of the substrate is released, and the plating process is terminated. Then, after raising the anode head 46 and removing the plating solution remaining on the surface of the substrate W by suction or the like, the substrate holding unit 30 is lowered, and the substrate after the plating process is transported to the next step.

  Next, a series of processes of the substrate processing apparatus shown in FIG. 5 will be described. First, a substrate cassette storing a plurality of substrates is carried into the load / unload unit 14 in the apparatus frame 12. The first transport robot 26 takes out one substrate from the substrate cassette carried into the load / unload unit 14 and transports the substrate to the substrate station 18. The second transfer robot 28 receives the substrate from the substrate station 18 and transfers the substrate to the pre-plating process 22.

  The plating pretreatment apparatus 22 that has received the substrate performs electrolytic treatment on the substrate, and electrochemically removes the passive film (ruthenium oxide) on the surface of the seed layer made of Ru by electrolytic treatment. When the plating pretreatment device 22 has a function of supplying pure water to the surface of the substrate after the plating pretreatment to rinse the substrate and rotating it at a high speed to dry the substrate, the plating pretreatment device 22 applies to the substrate. Rinse and dry processing are performed. In other cases, the substrate after the plating pretreatment is transported to the rinse / drying device 20 by the second transport robot 28, where the substrate is rinsed and dried. In some cases, the drying process may be omitted, or both the rinsing and the drying process may be omitted.

  The second transport robot 28 receives the substrate from the plating pretreatment device 22 or the rinsing / drying device 20 and transports it to the substrate holding unit 30 of the electrolytic plating device 24. The electrolytic plating copper device 24 that has received the substrate by the substrate holding unit 30 performs electrolytic copper plating on the surface of the seed layer made of Ru, and forms a copper plating film on the surface of the seed layer. Then, the plated substrate is transported to the rinsing / drying apparatus 20 by the second transport robot 28, where the substrate is rinsed and dried. If the electrolytic plating apparatus 24 has a function of supplying pure water to the surface of the substrate after plating to rinse the substrate and rotating it at high speed to dry it, the electrolytic plating apparatus 24 performs rinsing and drying treatment on the substrate. You may give it.

The first transfer robot 26 receives the dried substrate from the rinsing / drying device 20 and transfers it to the bevel etching / back surface cleaning device 16. The bevel etching / back surface cleaning apparatus 16 performs bevel etching for removing the copper plating film and the like attached to the bevel portion of the substrate by etching and back surface cleaning for cleaning the back surface of the substrate. The first transfer robot 26 receives the substrate from the bevel etching / back surface cleaning device 16 and returns it to the substrate cassette of the load / unload unit 14.
Thereby, a series of plating processes are completed.

  FIG. 11 shows an outline of an electrolytic treatment apparatus according to another embodiment of the present invention applied to an electrolytic plating apparatus. The electrolytic plating apparatus (electrolytic treatment apparatus) shown in FIG. 11 differs from the electrolytic plating apparatus (electrolytic treatment apparatus) shown in FIGS. 6 to 8 in that the anode side liquid circulation line 70 and the substrate (cathode) side liquid circulation line 72. Are in independent points. That is, the anode-side circulation line 70 includes a plating solution tank 74a and a chiller unit 86a as a temperature controller for adjusting the temperature of the plating solution in the tank 74a, and the substrate-side circulation line 72 includes a plating solution tank 74b. A chiller unit 86b serving as a temperature controller for adjusting the temperature of the plating solution in the tank 74b is provided, whereby the plating solution that flows along the anode-side circulation line 70 and the plating solution that flows along the substrate-side solution circulation line. The liquids do not mix with each other. The plating solution tanks 74a and 74b are individually provided with temperature sensors 96d and 96e. In this example, the stopper 42 is omitted. Other configurations are the same as those of the electroplating apparatus shown in FIGS.

  Thus, by making the anode side liquid circulation line 70 and the substrate side liquid circulation line 72 independent from each other, the plating solution having the same temperature is caused to flow through the anode side liquid circulation line 70 and the substrate side liquid circulation line 72 to circulate. Of course, if necessary, plating solutions having different temperatures can be circulated and circulated. Further, the plating solution flowing along the anode-side circulation line 70 does not affect the plating, and therefore, an arbitrary electrolytic solution, for example, sulfuric acid, may be caused to flow along the anode-side circulation line 70. The additive contained in the plating solution is not consumed on the anode, the management of the plating solution is facilitated, and the cost can be reduced.

  FIG. 12 shows an outline of an electrolytic treatment apparatus according to still another embodiment of the present invention applied to an electrolytic plating apparatus. The electrolytic plating apparatus (electrolytic processing apparatus) shown in FIG. 12 differs from the electrolytic plating apparatus (electrolytic processing apparatus) shown in FIG. 11 in that the rectifying plate 62 is omitted and the height of the anode chamber 54 is made as low as possible. Thus, the anode chamber 54 is narrowed and the oxygen gas exhaust pipe 84 is also omitted. Other configurations are the same as those of the electrolytic plating apparatus shown in FIG.

  According to this example, the structure is simplified by omitting the rectifying plate 62, the height of the anode chamber 54 is reduced, and the flow path constituting the anode-side liquid circulation line 70 inside the housing 48 is narrowed. By doing, the cooling effect with respect to the porous body (heating element) 50 of a plating solution can be raised.

  FIG. 13 shows an outline of an electrolytic treatment apparatus according to another embodiment of the present invention applied to an electrolytic plating apparatus. The electrolytic plating apparatus (electrolytic processing apparatus) shown in FIG. 13 is different from the electrolytic plating apparatus (electrolytic processing apparatus) shown in FIG. 12 in that the top part of the lower surface of the ceiling wall of the housing 48 constituting the anode chamber 54 is provided at the top. The exhaust port 48c is provided at the top, one end of the oxygen gas exhaust pipe 84 is connected to the exhaust port 48c, and the other end of the oxygen gas exhaust pipe 84 is connected to the anode side liquid circulation line 70. At the point connected to the return line 78. Other configurations are the same as the example shown in FIG. With this configuration, exhaust of oxygen generated on the surface of the anode 58 can be promoted.

  The above example shows an example in which the electrolytic treatment apparatus of the present invention is applied to an electrolytic plating apparatus. For example, in the electrolytic plating apparatus shown in FIGS. 6 to 8, an electrolytic solution such as sulfuric acid instead of the plating solution. , And the electrolyte solution is supplied and circulated along the anode-side liquid circulation line 70 and the substrate-side liquid circulation line 72, so that it can be applied to the plating pretreatment apparatus 22 shown in FIG. The same applies to each electrolytic plating apparatus shown in FIGS.

  That is, the plating pretreatment apparatus shown in FIG. 5 has a passive film on the surface of the seed layer made of Ru by flowing an electric current so that the substrate becomes a cathode while an electrolytic solution such as sulfuric acid is in contact with the substrate. This is an apparatus for electrochemically removing (ruthenium oxide) by electrolytic treatment. When performing the pre-plating treatment, the terminal effect effect becomes a problem as in the case of performing the plating treatment. And in order to reduce this terminal effect effect and perform a uniform treatment within the substrate surface, if a porous body having a low porosity is used, as in the case of the electrolytic plating apparatus, heat is generated from the porous body. It becomes a problem.

For example, in the electrolytic plating apparatus shown in FIGS. 6 to 8, a plating pretreatment apparatus is configured using an electrolytic solution such as sulfuric acid instead of the plating solution, and the porous porous body 50 is an alumina porous body having a porosity of 6%. And supplying 80 g / L sulfuric acid as an electrolyte to the anode side liquid circulation line 70 and the substrate (cathode) side liquid circulation line 72 at a flow rate of 10 L / min for 60 seconds at 40 mA / cm ^2. When the electrolytic treatment is performed, the porous body 50 generates heat of about 40 kcal.

  For this reason, in the electroplating apparatus shown in FIGS. 6 to 8, the plating pretreatment apparatus is configured using an electrolytic solution such as sulfuric acid instead of the plating solution, thereby circulating the temperature-controlled sulfuric acid to be porous. The body 50 can be cooled. In addition, about 200 mL of hydrogen is generated from the substrate (cathode), and unless the electrolytic solution (sulfuric acid) is circulated, hydrogen accumulates between the substrate and the porous body, affecting the electrolytic treatment. By circulating the liquid (sulfuric acid), hydrogen generated from the substrate can always be forced out.

  Although the embodiments of the present invention have been described so far, it is needless to say that the present invention is not limited to the above-described embodiments, and may be implemented in various forms within the scope of the technical idea. For example, although copper is used as the wiring material, a copper alloy may be used instead of copper.

(A) is a figure which shows the outline | summary of a trench and a plating film at the time of carrying out embedding plating using the plating solution whose liquid temperature is 20 degreeC, (b) uses the plating liquid whose liquid temperature is 25 degreeC. It is a figure which shows the outline | summary of a trench and plating film when performing embedded plating, and (c) is an outline of the trench and plating film when embedded plating is performed using a plating solution having a liquid temperature of 45 ° C. FIG. It is a graph which shows the result of having evaluated the plating solution temperature dependence about the embedding performance in the plating initial stage by the coupon test. It is a graph which shows the relationship between the anode side liquid circulation flow rate and the raise temperature of anode side plating liquid temperature. It is a figure which shows the copper wiring formation example which formed the copper wiring using Ru as a seed layer in order of a process. It is a plane | planar arrangement | positioning figure of the substrate processing apparatus provided with the electrolytic processing apparatus applied to the electrolytic plating apparatus of embodiment of this invention. It is a schematic diagram at the time of initial plating of the electroplating apparatus (electrolytic processing apparatus) of an embodiment of the invention. It is a schematic diagram at the time of the latter period plating of the electroplating apparatus of an embodiment of the invention. It is a figure which shows the relationship between the inlet port and outlet port provided in the housing of the anode side liquid circulation line of the electrolytic plating apparatus of embodiment of this invention, and a porous body. It is a figure which shows the other relationship between the inlet port and outlet port provided in the housing of an anode side liquid circulation line, and a porous body. When plating is performed without circulating the plating solution to the anode and substrate side with the porous body sandwiched (point A and curve B), and plating is performed while circulating the plating solution to the anode and substrate side with the porous body interposed 6 is a graph showing the relationship between the distance between the substrate and the porous body and the change in temperature of the plating solution temperature when the test is performed (point C and curve D). It is a schematic diagram which shows the electrolytic treatment apparatus applied to the electrolytic plating apparatus of other embodiment of this invention. It is a schematic diagram which shows the electrolytic treatment apparatus applied to the electrolytic plating apparatus of further another embodiment of this invention. It is a schematic diagram which shows the electrolytic treatment apparatus applied to the electrolytic plating apparatus of further another embodiment of this invention.

Explanation of symbols

12 device frame 14 load / unload unit 16 bevel etching / back surface cleaning device 20 rinsing / drying device 22 pre-plating device 24 electroplating device 30 substrate holding unit 32 cathode unit 34 seal ring 36 cathode contact 38 plating power source 46 anode head 48 Housing 50 Porous body 54 Anode chamber 58 Anode 62 Adjustment plate 70 Anode side liquid circulation line 72 Substrate (cathode) side liquid circulation lines 74, 74a, 74b Plating solution tanks 76, 88a, 88b Liquid feed pump 78 Anode side liquid supply line 80, 92 Gas-liquid separation tank 82 Anode-side liquid return line 84 Oxygen gas exhaust pipe 86, 86a, 86b Chiller unit (temperature controller)
90 Substrate side liquid supply line 94 Substrate side liquid return line 96a, 96b, 96c, 96d, 96e Temperature sensor

Claims (11)

A substrate holder for holding the substrate horizontally;
An anode head having a housing which is disposed above the substrate holding portion so as to be movable up and down, is immersed in an electrolytic solution to accommodate the anode, and has a lower end opening closed with a porous body;
A cathode part having a seal ring that contacts the peripheral edge of the substrate held by the substrate holder and seals the peripheral edge, and a cathode contact that contacts the peripheral edge and energizes the surface to be processed;
An anode-side liquid circulation line for supplying and circulating an electrolyte having a controlled temperature in the housing so that the electrolyte is in contact with the porous body;
A substrate-side liquid circulation line for supplying and circulating an electrolyte having a controlled temperature between the porous body and the substrate when the porous body is in an electrolytic treatment position close to the substrate. Electrolytic treatment equipment.   2. The anode-side liquid circulation line and the substrate-side liquid circulation line are configured to individually circulate an electrolyte whose temperature is individually adjusted via a temperature regulator. Electrolytic processing equipment.   The temperature of the electrolyte flowing along the anode side liquid circulation line and the substrate side liquid circulation line is detected at a position located downstream of the porous body of the anode side liquid circulation line and the substrate side liquid circulation line. The electrolytic processing apparatus according to claim 1, wherein a temperature sensor is installed.   4. The electrolytic processing apparatus according to claim 1, wherein a gas-liquid separation tank is installed in each of the anode-side liquid circulation line and the substrate-side liquid circulation line.   The electrolytic processing apparatus according to claim 1, wherein the anode is an insoluble anode.   5. The electrolytic processing apparatus according to claim 1, wherein a rectifying plate for vertically dividing a space in the housing is arranged inside the housing.   The distance between the porous body and the substrate when the porous body is in an electrolytic treatment position close to the substrate is 0.1 to 30 mm. Electrolytic treatment equipment.   The seed surface which is a white metal element is provided in the to-be-processed surface of the said board | substrate, The porosity of the said porous body is 19% or less, The Claim 1 thru | or 7 characterized by the above-mentioned. Electrolytic processing equipment. An anode head having a housing which is immersed in an electrolytic solution and accommodates an anode therein and whose lower end opening is closed with a porous body is disposed so that the porous body is located at an electrolytic treatment position close to the substrate,
Supply and circulate an electrolyte whose temperature is controlled in the housing so that the electrolyte contacts the porous body,
Electrolytic treatment characterized in that a substrate is electrolyzed by applying a voltage between the substrate and the anode while supplying and circulating an electrolyte having a controlled temperature between the porous body and the substrate. Method.   Plating treatment is performed using a plating solution as an electrolytic solution to be supplied and circulated between the porous body and the substrate, and a plating solution or an electrolytic solution other than the plating solution as an electrolytic solution to be supplied and circulated in the housing. The electrolytic treatment method according to claim 9, wherein:   The temperature T of the plating solution supplied and circulated between the porous body and the substrate is maintained at 10 ° C. <T ≦ 25 ° C. at the initial stage of plating, and the temperature of the plating solution is added to the plating solution. The electrolytic treatment method according to claim 10, wherein the plating treatment is continued while being kept below the cloud point of the agent.

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