JP2010064909A - Method for processing surface layer of diamond - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method capable of forming a processed part having excellent flatness by a relatively simple method in a method for processing the surface layer of diamond capable of processing the surface of the diamond into an arbitrary shape. <P>SOLUTION: The method for processing the surface layer of the diamond includes processes of (1) to (3): (1) A process for forming a shielding layer having a shape corresponding to the projecting part of the objective diamond processing surface on the surface of the diamond to be treated. (2) A process for forming a graphitized non-diamond layer in the vicinity of the surface of the diamond by performing ion implantation from the surface of the diamond wherein the shielding layer is formed at the (1) process and heating the diamond. (3) A process for separating the surface layer part from the non-diamond layer by etching the graphitized non-diamond layer. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a diamond surface layer processing method.

Diamond is not only a grindstone and a tool, but also next-generation semiconductor materials (power devices, high-temperature devices, radiation-resistant devices), electron-emitting materials (fluorescent tubes, electron beam sources), optical materials (microlens arrays), MEMS (Micro Electro It is attracting attention as a material for mechanical systems or micromachines. In recent years, large-scale polycrystalline and single-crystal diamond plates have been produced by vapor phase synthesis, and the above-mentioned application has become more realistic. These applications include the excellent physical properties of diamond, such as a large band gap of 5.5 eV, large mobility of electrons and holes, negative electron affinity (hydrogen-terminated surface), the highest hardness in materials, and chemical stability. It is intended to use the characteristics of.

  In order to use diamond as the above-described various device materials, surface fine processing of diamond is required depending on its use. Usually, as a microfabrication method of diamond, a method in which a conventional silicon semiconductor manufacturing technique is improved is applied, and mask formation by lithography and dry etching are the main methods. However, in the method of performing microfabrication by etching, an unintended surface protrusion or surface roughness tends to occur on the etched surface, and a method capable of forming a smoother processed surface is desired.

For example, Patent Document 1 below discloses a method for forming a flat etching surface by selecting processing conditions for an etching process and an etching surface cleaning process. Furthermore, in Patent Document 2 below, after a flat film made of a material different from diamond is formed on the diamond surface, ion implantation is performed to form a diamond altered layer, and this altered layer is removed by etching. A method for planarizing diamond is described. However, in these methods, the surface layer is finally etched and removed sequentially from the outermost surface, so that it is difficult to suppress protrusions that are likely to occur during the etching process.
JP 2007-258242 A JP 7-41388 A

  The present invention has been made in view of the above-described problems of the prior art, and the main purpose thereof is a diamond surface layer processing method capable of processing the surface of the diamond into an arbitrary shape, and a relatively simple method. An object of the present invention is to provide a method capable of forming a processed portion having excellent flatness.

The present inventor has intensively studied to achieve the above-described object. As a result, after forming a shielding layer having a pattern corresponding to the convex portion of the target processed surface on the surface of the diamond to be processed, a non-diamond layer is formed in the diamond by ion implantation from the surface. According to the present invention, it has been found that a non-diamond layer having the same shape as the diamond surface on which the shielding layer is formed is formed in the vicinity of the diamond surface. Then, the non-diamond layer is heated to be graphitized, and then etched to easily separate the surface layer portion from the diamond main body from the non-diamond layer and to form a shape corresponding to the diamond surface on which the shielding layer is formed. We found that diamonds on the surface can be processed. And, it was found that the processed surface of the diamond processed in this way is very excellent in flatness compared to the surface processed by etching sequentially from the surface, and can be effectively used for various applications. . Furthermore, for diamond processed by such a method, by performing ion implantation and heating to form a graphitized non-diamond layer, diamond is grown on the surface, and then the non-diamond layer is etched, The surface layer portion containing the grown diamond can be easily separated, and the separation surface of the separated surface layer portion is a shape obtained by inverting the shape of the diamond surface serving as a substrate, and has excellent flatness. It has been found that it can be used effectively for various purposes. The present invention has been completed based on these findings.

That is, the present invention provides the following diamond surface layer processing method.
1. Diamond surface layer processing method including the following steps (1) to (3):
(1) A step of forming a shielding layer having a shape corresponding to the convex portion of the target diamond processed surface on the surface of the diamond to be treated;
(2) A step of performing ion implantation from the surface of the diamond on which the shielding layer has been formed in the step (1), and then forming a non-diamond layer graphitized near the surface of the diamond by heating,
(3) A step of etching the graphitized non-diamond layer to separate a surface layer portion from the non-diamond layer.
2. Item 2. The method according to Item 1, wherein the material for forming the blocking layer is a ceramic material, a glass material, or a metal material, and the method for etching the non-diamond layer is an electrochemical etching method.
3. A method for separating a diamond growth layer including the following steps:
(1) A step of ion-implanting diamond having a convex portion formed on the surface and then heating to form a graphitized non-diamond layer near the surface of the diamond,
(2) a step of growing diamond on the surface of the diamond on which the non-diamond layer is formed by vapor phase synthesis;
(3) A step of growing a diamond in the step (2) and then etching a non-diamond layer to separate a surface layer portion including the diamond growth layer.
4). 4. The method for separating a diamond growth layer according to item 3, wherein when the diamond is grown in the step (2), heating for graphitizing the non-diamond layer in the step (1) is performed simultaneously. Method.
5). 5. The method for separating a diamond growth layer according to item 3 or 4, wherein the diamond having a convex portion formed on the surface used in step (1) is the diamond obtained by the method according to claim 1 or 2. Layer separation method.

    Hereinafter, the processing method of the present invention will be specifically described.

Diamond to be processed by the processing method of the diamond present invention to be processed is not particularly limited, for example, natural diamond, diamond consisting of artificially produced bulk single crystal by high pressure synthesis, gas Various diamonds such as polycrystalline diamond, single crystal diamond, and nano diamond formed on a substrate or the like by a phase synthesis method can be processed. Furthermore, diamond-like carbon (DLC) is also included in the diamond to be treated of the present invention.

(1) Diamond surface layer processing method Hereinafter, the method of the present invention will be described in detail with reference to FIG. 1 showing the outline of the surface layer processing method of the present invention.

(I) Blocking layer forming step:
First, as shown in FIG. 1A, a shielding layer is formed on the surface of the diamond to be treated with a pattern corresponding to the target surface shape of the processed surface. That is, a shielding layer may be formed on a portion that becomes a convex portion according to the final surface shape of the diamond processed surface.

The material for forming the shielding layer may be any material that does not cause scattering, weight loss, deformation or the like by ion implantation. For example, glass materials such as SiO ₂ and Al ₂ O ₃ , ceramic materials; Fe, Ni, Au, A metal material such as Pt can be used. In particular, if a material having the same ion implantation depth (called a range) as that of diamond is used, a non-diamond layer having the same shape as the shielding layer can be formed in an ion implantation process described later. Further, diamond itself can be used as a material for the shielding layer.

The method for forming the shielding layer is not particularly limited, and a method that can form a shielding layer having a desired shape and thickness may be employed depending on the material of the shielding layer to be used. For example, a method of forming a thin film using a thin film manufacturing method such as vacuum deposition, sputtering, plasma CVD, spin coating, dip coating, and patterning using a general photolithography method can be applied.

  The thickness of the shielding layer may be determined based on the range of implanted ions determined according to the material to be used during ion implantation described later. That is, when diamond is used as the material of the blocking layer, the range of implanted ions in the portion where the blocking layer is formed is the same as the portion where the blocking layer is not formed. By doing so, it is possible to form a non-diamond layer having the same shape as that of the diamond surface on which the blocking layer is formed. In addition, when the blocking layer is formed using a material in which the range of the implanted ions in the portion where the blocking layer is formed is shorter than that in the portion where the blocking layer is not formed, The height of the convex portion of the diamond layer is higher than that of the convex portion formed by the blocking layer. In consideration of these points, the thickness of the barrier layer may be determined so that a non-diamond layer having a desired shape is formed according to the type of the material of the barrier layer used.

(Ii) Non-diamond layer forming process:
Next, ion implantation is performed from the diamond surface on which the blocking layer is formed. The ion implantation method is a method of irradiating a sample with high-speed ions. In general, a desired element is ionized and extracted, and a voltage is applied to the sample to accelerate it by an electric field, followed by mass separation and a predetermined energy. This is performed by irradiating the sample with ions with a plasma, but it can also be performed by plasma ion implantation that induces positive ions in the plasma by immersing the sample in plasma and applying a negative high voltage pulse to the sample. Good. As the implanted ions, for example, carbon, oxygen, argon, helium, proton, or the like can be used.

  The ion implantation energy may be in the range of about 10 keV to 10 MeV used in general ion implantation. The implanted ions are distributed with a certain width around an implantation depth (range) determined by the kind and energy of ions and the kind of material into which ions are implanted. Although the damage to the sample is maximized in the vicinity of the range where the ions are stopped, the ions are damaged to some extent by passing the ions on the surface side from the vicinity of the range. The range and the degree of damage can be calculated and predicted by a Monte Carlo simulation code such as SRIM code.

  By ion-implanting diamond with a blocking layer, if the irradiation dose exceeds a certain amount, the crystal structure is altered on the surface side from the vicinity of the ion range, and the diamond structure is destroyed and a non-diamond layer is formed. Is done.

The depth and thickness of the non-diamond layer to be formed vary depending on the type of ions used, implantation energy, dose, type of material to be ion implanted, etc., so these conditions are separated in the vicinity of the ion range. What is necessary is just to determine that the possible non-diamond layer is formed. Normally, the atomic concentration is 1x10 ²⁰ for the portion with the highest atomic concentration of implanted ions.
It is preferably about atoms / cm ³ or more, and in order to reliably form a non-diamond layer, it is preferably about 1 × 10 ²¹ atoms / cm ³ , that is, the amount of breakage damage is 1 dpa or more.

For example, when carbon ions are implanted at an implantation energy of 3 MeV, the ion irradiation amount may be approximately 1 × 10 ¹⁶ ions / cm ^{2 to} 1 × 10 ¹⁷ ions / cm ² . In this case, if the ion irradiation amount is too large, the surface crystallinity is deteriorated. On the other hand, if the ion irradiation amount is too small, the non-diamond layer is not sufficiently formed, and separation of the surface layer portion becomes difficult.

  By performing ion implantation by the above-described method, as shown in FIG. 1B, a non-diamond layer having the same uneven shape as the diamond surface on which the shielding layer is formed is formed in the vicinity of the surface of the diamond to be treated. Is done.

  Next, after ion implantation, the diamond is heat treated at a temperature of 600 ° C. or higher in a non-oxidizing atmosphere such as a vacuum, a reducing atmosphere, or an inert gas atmosphere containing no oxygen, thereby proceeding to graphitize the non-diamond layer. Let Thereby, the etching in the next process proceeds quickly. The upper limit of the heat treatment temperature is the temperature at which diamond begins to graphitize, but it may usually be about 1200 ° C. About heat processing time, although it changes with processing conditions, such as heat processing temperature, what is necessary is just to be about 5 minutes-10 hours, for example.

(Iii) Non-diamond layer etching process:
After the non-diamond layer is graphitized by the above-described method, the non-diamond layer is etched to separate the surface layer portion from the non-diamond layer. Thereby, as shown in FIG.1 (c), the diamond which has the surface shape corresponding to the diamond surface in which the shielding layer was formed can be obtained. At this time, the position where the convex portion is formed on the diamond surface after separating the surface layer portion is the same position as the position where the blocking layer is formed, but the height of the protruding portion is the material forming the blocking layer. This corresponds to the range of implanted ions determined according to the above. That is, when the range of the implanted ions in the portion where the blocking layer is formed is shorter than the range of the portion where the blocking layer is not formed, the height of the convex portion of the diamond surface separating the surface layer is the blocking layer If the distance of the implanted ions in the part where the blocking layer is formed is longer than that of the part where the blocking layer is not formed, the processed diamond The height of the convex portion on the surface is smaller than the height of the convex portion on the diamond surface on which the blocking layer is formed.

  The method for removing the surface layer portion from the non-diamond layer is not particularly limited. For example, methods such as electrochemical etching, thermal oxidation, and electrical discharge machining can be applied.

  As a method for removing the non-diamond layer by electrochemical etching, for example, two electrodes are placed in the electrolytic solution at regular intervals, and the single crystal diamond on which the non-diamond layer is formed is interposed between the electrodes in the electrolytic solution. A method of applying a DC voltage between the electrodes can be employed. As the electrolytic solution, pure water is desirable. The electrode material is not particularly limited as long as it has conductivity, but a chemically stable electrode such as platinum or graphite is desirable. The electrode spacing and the applied voltage may be set so that etching proceeds most rapidly. The electric field strength in the electrolytic solution is usually about 100 to 300 V / cm.

  Also, in the method of removing the non-diamond layer by electrochemical etching, the etching is performed by applying an alternating voltage, and even in the case of a large single crystal diamond, the etching in the non-diamond layer is extremely difficult to reach the inside of the crystal. It progresses quickly and it becomes possible to separate the diamond on the surface side from the non-diamond layer in a short time.

As for the method of applying an alternating voltage, the electrode interval and the applied voltage may be set so that the etching proceeds the fastest. Usually, the electric field strength in the electrolyte obtained by dividing the applied voltage by the electrode interval is usually 50 to 50. It is preferably about 10000 V / cm, more preferably about 500 to 10,000 V / cm.

  As the alternating current, it is easy to use a commercial sine wave alternating current with a frequency of 60 or 50 Hz, but the waveform is not particularly limited to a sine wave as long as it has the same frequency component.

The pure water used as the electrolytic solution has a higher specific resistance (that is, a lower electrical conductivity) and is more convenient because a higher voltage can be applied. Ultrapure water obtained using a general ultrapure water device has a sufficiently high specific resistance of about 18 MΩ · cm, and can therefore be suitably used as an electrolytic solution. A low liquid temperature is convenient because a high voltage can be applied. In practice, etching is started at room temperature, and if it is not cooled, there is no problem even if the temperature is raised to about 80 °.

  Further, as a method of removing the non-diamond layer by thermal oxidation, for example, heating to a high temperature of about 500 to 900 ° C. in an oxygen atmosphere and etching the non-diamond layer by oxidation. At this time, if the etching proceeds to the inside of the diamond, oxygen does not easily permeate from the outer periphery of the crystal. Therefore, oxygen ions are selected as ions for forming the non-diamond layer, and more than the irradiation amount necessary for the etching to occur. If a sufficiently large amount of oxygen ions is implanted, oxygen is also supplied from the inside of the non-diamond layer during etching, so that the etching of the non-diamond layer can proceed faster.

  Furthermore, since the non-diamond layer that has been graphitized has conductivity, it can be cut (etched) by electric discharge machining.

  According to the above method, the surface layer portion is easily separated from the non-diamond layer, and the diamond surface after processing has a shape corresponding to the diamond surface on which the blocking layer is formed in the step (1). According to this method, when processing the surface layer of diamond, it is difficult for surface protrusions and surface roughness to occur in the processed portion, and a processed surface with excellent flatness can be formed.

(2) Separation processing method of the diamond growth layer For the diamond whose surface layer portion is processed by the above-described method, further, ion implantation is performed from this surface to form a non-diamond layer in the vicinity of the diamond surface, and then the gas phase is formed. By growing diamond on the diamond surface by a synthesis method and then etching the non-diamond layer, the diamond in the surface layer portion containing diamond grown by vapor phase synthesis can be separated from the diamond in the lower layer portion.

Hereinafter, this method will be specifically described with reference to FIG.
(I) Non-diamond layer formation process:
The diamond to be treated is a diamond having convex portions formed on the surface. As such a diamond, a diamond obtained by the surface layer processing method described in the above section (1) can be used, but is not limited to this. For example, after forming a mask having a predetermined pattern by a photolithography method Also, diamond whose surface is finely processed by a dry etching method or the like can be used. In this case, a convex part means a relatively high part with respect to the lowest surface. Accordingly, when the concave portion is formed by etching the surface, the non-etched surface becomes a convex portion with respect to the bottom surface of the concave portion, and this is also included in the diamond on which the convex portion is formed.

First, as shown in FIGS. 2A and 2B, a non-diamond layer is formed by performing ion implantation on diamond having convex portions formed on the surface. The ion implantation method is the above (1) (
The method may be the same as that described in section ii). As a result, a non-diamond layer having a shape similar to the shape of the convex portion on the surface is formed in the vicinity of the surface of the diamond.

  Next, heat treatment is performed in the same manner as described in the above item (1) (ii) to graphitize the non-diamond layer. This heat treatment can be performed, for example, using a diamond growth gas phase synthesis apparatus described later. In this case, for example, heat treatment may be performed according to the above conditions in a hydrogen gas atmosphere usually used for diamond synthesis.

  Alternatively, if the diamond synthesis conditions in the diamond growth step described later are sufficiently high, graphitization of the non-diamond layer proceeds during diamond synthesis, so that a graphitization step by independent heat treatment is unnecessary.

(Ii) Diamond growth process:
Next, as shown in FIG. 2C, diamond is grown on the surface of the diamond to be treated. As a method for growing diamond, a vapor phase synthesis method can be employed. The gas phase synthesis method is not particularly limited, and for example, a known method such as a microwave plasma CVD method, a hot filament method, a direct current discharge method, or the like can be applied.

In particular, according to the microwave plasma CVD method, a high-purity diamond film can be grown. There are no particular limitations on the specific production conditions, and diamond may be grown according to known conditions. As the source gas, for example, a mixed gas of methane gas and hydrogen gas can be used, and further, by adding nitrogen gas to this, the growth rate is dramatically increased, and particularly in the case of single crystal growth, abnormal growth occurs. The generation of particles and growth hills can be eliminated.

  As an example of specific diamond growth conditions, in a mixed gas of hydrogen, methane, and nitrogen used as a reaction gas, methane has a ratio of about 0.01 to 0.33 mol with respect to 1 mol of hydrogen supply. The nitrogen is preferably supplied at a ratio of about 0.0005 to 0.1 mol per 1 mol of methane supplied. Moreover, what is necessary is just to usually set the pressure in a plasma CVD apparatus to about 13.3-40 kPa. As the microwave, a microwave having a frequency permitted for industrial and scientific use such as 2.45 GHz and 915 MHz is usually used. The microwave power is not particularly limited, but is usually about 0.5 to 5 kW. Within such a range, for example, each condition may be set so that the temperature of the diamond substrate is about 900 to 1300 ° C. In addition, maintaining the substrate at such a temperature promotes graphitization of the non-diamond layer formed by ion implantation.

(Iii) Non-diamond layer etching process :
Next, the non-diamond layer is etched to separate the surface layer portion from the non-diamond layer. Thereby, as shown in FIGS. 2D and 2E, the diamond portion on the surface layer side from the non-diamond layer and the diamond portion grown by vapor phase synthesis can be separated from the diamond below the non-diamond layer. it can. As a method for etching the non-diamond layer, a method similar to the method described in the above item (1) (iii) can be adopted.

  According to this method, the diamond in the lower layer than the non-diamond layer shown in FIG. 2 (e) has the same surface shape as that of the diamond before the diamond is grown by the vapor phase synthesis method. This diamond can be used for various applications such as a tool, a grindstone, and a substrate for electronic devices, but can also be used repeatedly as a substrate in the method for separating a diamond growth layer shown in the above item (2).

Further, for the diamond separated from the lower layer portion shown in FIG. 2D, that is, the diamond including the diamond portion on the surface layer side from the non-diamond layer and the diamond portion grown by vapor phase synthesis, the surface shape of the separation surface is The surface shape of the diamond before processing is reversed. The diamond obtained in this way also has excellent processed surface flatness compared to diamond whose surface is directly processed by an etching method, and can be used effectively for the various applications described above.

  According to the diamond surface layer processing method of the present invention, after forming a blocking layer on the surface, ion implantation and heating are performed, and the diamond surface is formed by a relatively simple processing method of etching the formed non-diamond layer. It can be processed into any shape. Further, the processed surface has good flatness.

  Further, according to the method for separating a diamond growth layer of the present invention, a diamond growth layer formed on a surface of a diamond having an arbitrary surface shape can be separated by a simple method. The surface layer portion including the separated diamond growth layer forms a smooth separation surface and has a surface shape obtained by inverting the shape of the diamond substrate.

  Diamond processed by the method of the present invention can be effectively used for various applications such as tools, optical components, semiconductor elements, electronic components, and molds.

  Hereinafter, the present invention will be described in more detail with reference to examples.

Example 1
A plurality of cylindrical SiO ₂ layers having a diameter of 20 μm and a thickness of 130 nm were formed on a flat-polished single crystal diamond substrate (3 × 3 mm, thickness 0.5 mm) polished flat using a photolithographic technique. . FIG. 3 is a plan view and a front view schematically showing a diamond substrate on which a plurality of SiO ₂ layers are formed. FIG. 4 is a graph showing the results of measuring the cross-sectional shape of the portion where the SiO ₂ layer is formed using a laser microscope.

Next, carbon ions with an energy of 3 MeV were ion-implanted at a room temperature at a dose of 2 × 10 ¹⁶ ions / cm ² using a tandem accelerator on the diamond base material on which the SiO ₂ layer was formed. Thereafter, this substrate was placed in a microwave plasma CVD apparatus and heated to 1100 ° C. with hydrogen plasma to graphitize the ion implantation layer.

Next, in a glass beaker containing 400 cc of ultrapure water, two platinum electrodes with a diameter of 0.5 mm were placed at an interval of about 5 mm, and the above sample was placed between the electrodes using a glass plate and Teflon (registered trademark) tape. The surface layer portion made of SiO ₂ and diamond was separated by fixing and etching the graphite layer by electrolytic etching under the condition of an applied voltage of 4 kV (AC 60 Hz). The liquid temperature rose from 25 ° C. at the start of etching during the etching, reached about 80 ° C. after 1 hour, and remained constant thereafter.

On the separation surface of the diamond base material after separating the surface layer portion, a convex portion was formed at a portion corresponding to the position where the SiO ₂ layer was formed. FIG. 5 is a graph showing the results of measuring the cross-sectional shape of the portion of the diamond base material where the convex portions are formed using a laser microscope. As is clear from FIG. 5, on the surface of the diamond base material after processing, a protrusion having a diameter of about 20 μm, which is the same as that of the SiO ₂ layer, is formed in a portion corresponding to the position where the SiO ₂ layer was formed. It could be confirmed. Moreover, the roughness of the processed surface was almost the same as the roughness of the diamond surface before processing, and it was confirmed that a flat processed surface was formed.

Example 2
Using the tandem accelerator, carbon ions with an energy of 3 MeV were ion-implanted at a dose of 2 × 10 ¹⁶ ions / cm ² and at room temperature using the tandem accelerator.

This substrate is placed in a microwave plasma CVD apparatus, 500 sccm of hydrogen is supplied, the pressure is adjusted to 160 Torr, plasma is generated by applying microwave power, the substrate is heated to 1150 ° C., and the ion implantation layer Was graphitized, and further, a source gas of methane 60 sccm and nitrogen 0.6 sccm was introduced to perform diamond epitaxial growth. The thickness of the diamond epitaxial growth layer was 0.3 mm.

  Next, the graphite layer was etched on the sample in the same manner as in Example 1 by electrolytic etching in pure water to separate the surface layer portion from the graphite layer.

  In the separated surface layer part, the part corresponding to the convex part of the diamond base material was a concave part on the separation surface from the lower layer part. FIG. 6 is a graph showing the result of measuring the cross-sectional shape of the portion where the concave portion of the separated surface layer portion is formed using a laser microscope. As is clear from FIG. 6, it was confirmed that a concave portion having a diameter of 20 μm similar to the convex portion was formed in the portion corresponding to the convex portion of the diamond base material. Further, on the separation surface of the diamond base material after separating the surface layer portion, a convex portion having the same shape was formed at a portion corresponding to the position where the convex portion was formed on the diamond surface to be processed. FIG. 7 is a graph showing the result of measuring the cross-sectional shape of the portion where the convex portion of the separation surface of the diamond base material after separation was formed using a laser microscope. As is apparent from FIG. 7, it can be confirmed that a convex portion having a diameter of about 20 μm is formed in a portion corresponding to the position where the convex portion is formed on the diamond surface to be processed. Moreover, about the separated surface, it was confirmed that both the separated surface layer portion and the diamond base material portion had almost the same roughness as the diamond surface before processing, and a flat processed surface was formed.

Explanatory drawing which shows the outline of the surface layer processing method of this invention. Explanatory drawing which shows the outline of the separation processing method of the diamond growth layer of this invention. Plane front view schematically showing a diamond substrate SiO ₂ layer was formed used in Example 1. Graph showing the results of the SiO ₂ layer used in Example 1 for diamond substrate formed, and the portion of the cross-sectional shape SiO ₂ layer was formed was measured using a laser microscope. In Example 1, the graph which shows the result of having measured the cross-sectional shape of the part in which the convex part of the diamond base material was formed with the laser microscope. In Example 2, the graph which shows the result of having measured the cross-sectional shape of the part in which the recessed part of the isolate | separated surface layer part was formed with the laser microscope. In Example 2, the graph which shows the result of having measured the cross-sectional shape of the part in which the convex part of the separation surface of the diamond base material was formed with the laser microscope.

Claims (5)

Diamond surface layer processing method including the following steps (1) to (3):
(1) A step of forming a shielding layer having a shape corresponding to the convex portion of the target diamond processed surface on the surface of the diamond to be treated;
(2) A step of performing ion implantation from the surface of the diamond on which the shielding layer has been formed in the step (1), and then forming a non-diamond layer graphitized near the surface of the diamond by heating,
(3) A step of etching the graphitized non-diamond layer to separate a surface layer portion from the non-diamond layer. The method according to claim 1, wherein the material forming the barrier layer is a ceramic material, a glass material, or a metal material, and the method for etching the non-diamond layer is an electrochemical etching method. A method for separating a diamond growth layer including the following steps:
(1) A step of ion-implanting diamond having a convex portion formed on the surface and then heating to form a graphitized non-diamond layer near the surface of the diamond,
(2) a step of growing diamond on the surface of the diamond on which the non-diamond layer is formed by vapor phase synthesis;
(3) A step of growing a diamond in the step (2) and then etching a non-diamond layer to separate a surface layer portion including the diamond growth layer. 4. The method for separating a diamond growth layer according to claim 3, wherein when the diamond is grown in the step (2), heating for graphitizing the non-diamond layer in the step (1) is simultaneously performed. Method. The method for separating a diamond growth layer according to claim 3 or 4, wherein the diamond having a convex portion formed on the surface used in the step (1) is a diamond obtained by the method of claim 1 or 2. Layer separation method.

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