JP2010056249A - Substrate processing apparatus, and method of manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus that makes a cleaning time short, a cleaning interval long, and a maintenance cycle long, and improves product quality, throughput, and working rate. <P>SOLUTION: The substrate processing apparatus includes a reaction pipe for processing a substrate inside, a manifold 41 coupled to the reaction pipe, having a projection portion 74 protruding from an inner wall of the reaction pipe toward the axial center of the reaction pipe, and composed of a nonmetal member, a protection pipe 65 storing a temperature detector, provided in the reaction pipe while held by the manifold 41, and composed of a nonmetal member, and a protection pipe movement suppressing unit 87 provided to the projection portion 74, suppressing movement of the protection pipe 65, and composed of a nonmetal member, a groove 78 for suppressing the movement of the protection pipe being formed on an inner wall side of the projection portion 74. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus that performs processing such as film formation, annealing, oxidation, diffusion, and reflow for forming an oxide film, a metal film, and a semiconductor film on a substrate such as a silicon wafer, and a method for manufacturing the semiconductor device. .

  A batch type vertical hot wall type CVD apparatus which is an example of a heat treatment apparatus for depositing silicon nitride (Si3 N4), silicon oxide (SiOx), polysilicon, etc. on a wafer in the manufacture of semiconductor devices. Is widely used.

  A batch type vertical hot wall type CVD apparatus (hereinafter referred to as a CVD apparatus) includes an outer tube, an inner tube provided inside the outer tube and defining a processing chamber, and a heating device (heater) for heating the inside of the outer tube. ), A manifold to which an outer tube and an inner tube are placed and an exhaust pipe for exhausting the processing chamber and a gas introduction pipe for supplying gas to the processing chamber are connected, and a predetermined number of wafers are aligned vertically and held. And a boat to be carried into the processing chamber.

  Then, a boat holding a predetermined number of wafers is loaded into the processing chamber from the lower furnace port (boat loading), and a film forming gas is supplied to the processing chamber from the gas introduction pipe, and the processing chamber is heated by the heating device. As a result, a CVD film is deposited on the wafer.

  In recent years, miniaturization of devices has progressed, and management standards for particle and metal contamination have become stricter in wafer processing. In addition, in order to meet the demand for improvement in equipment operation rate, self-cleaning technology using corrosive gas is introduced, and the film adhering to the components in the processing chamber is removed, thereby shortening the maintenance time and extending the maintenance cycle. I am trying.

  As the material of the members constituting the processing chamber, a non-metallic material such as quartz is used for the outer tube and the inner tube, and a metal (nickel alloy) having high corrosion resistance is used for the manifold.

  The manifold is provided with a gas port for supply and exhaust systems, a gas supply nozzle for supplying process gas to the processing chamber, a protection tube for storing the temperature detector, and the like are supported. Further, the manifold is provided with a gas supply nozzle and a protection tube. It has a complicated structure such as an adjustment member for adjusting the inclination, a gas supply nozzle, and a bolt for fixing the protective tube.

  Referring to FIG. 16, the structure of the manifold portion in the conventional substrate processing apparatus will be described.

  In the figure, 1 is an outer tube, 2 is an inner tube, 3 is a manifold, and 4 is a treatment chamber.

  The outer tube 1 is made of quartz and has a cylindrical shape, the inner tube 2 is made of quartz and has a cylindrical shape with an open upper end, and the outer tube 1 and the inner tube 2 are concentrically multiplexed. And placed on the manifold 3 made of metal. A flange 5 is formed at the lower end of the outer tube 1, and the flange 5 is fixed to the manifold 3 by a flange fixing member 6.

  The lower end of the manifold 3 forms a furnace port portion 7, and the furnace port portion 7 is airtightly closed by a seal cap 8 mounted on a boat (not shown). A processing chamber 4 is defined by the inner tube 2, the manifold 3, and the seal cap 8.

  A protective tube support port 11 is provided on the side wall of the manifold 3 so as to protrude horizontally outwardly. A temperature detector (not shown) for detecting the temperature of the processing chamber 4 is housed in a protective tube 12, and the protective tube 12 includes a vertical portion 12 a extending vertically along the inner surface of the inner tube 2 and the protective tube 12. The lower portion of the vertical portion 12a has a horizontal portion 12b continuous through a bent portion 12c. The horizontal portion 12b penetrates the protective tube support port 11 and is hermetically held by the protective tube support port 11. .

  A protective tube support fitting 13 is attached to the manifold 3 so as to face the bent portion 12c, and a vertical holding portion 13a of the protective tube support fitting 13 abuts on the vertical portion 12a, so that the protective tube A metal inclination adjusting screw 15 threaded through the horizontal holding portion 13b of the support metal 13 is in contact with the horizontal portion 12b.

  The protective tube support fitting 13 bears a vertical load of the protective tube 12 so that an excessive load is not applied to the holding portion of the protective tube 12 by the protective tube support port 11. Further, by adjusting the inclination adjusting screw 15, the inclination is adjusted so that the vertical portion 12a of the protective tube 12 is vertical.

  Reference numerals 16, 17, and 18 are seal members that hermetically seal the joint surfaces.

  In FIG. 17, the structure of another manifold portion in the conventional substrate processing apparatus will be described. In FIG. 17, parts that are the same as those shown in FIG. 16 are given the same reference numerals, and descriptions thereof are omitted.

  FIG. 17 shows the case where the target to be supported by the manifold 3 is the gas supply nozzle 21.

  A metal ring member 22 is fixed to the upper end of the manifold 3, and the inner tube 2 is erected on the ring member 22 via a metal base 23. A metal inner tube retainer 24 is fixed to the pedestal 23 with bolts 25, and the inner tube retainer 24 can be engaged with an inner flange 26 formed at the lower end of the inner tube 2. Prevent falls.

  A nozzle support port 27 is provided on the side wall of the manifold 3 so as to protrude horizontally outwardly. A horizontal portion 21b of the gas supply nozzle 21 passes through the nozzle support port 27 and is kept airtight.

  A metal nozzle support fitting 28 is provided on the inner surface of the manifold 3 so as to hang down while supporting the ring member 22, and a metal nozzle tilt adjusting screw 29 is screwed into the nozzle support fitting 28 in the vertical direction. In addition, the upper end of the nozzle tilt adjusting screw 29 is in contact with the horizontal portion 21 b, and the vertical load of the gas supply nozzle 21 is supported by the nozzle tilt adjusting screw 29.

  A concave groove is formed in the inner peripheral edge of the ring member 22, and the vertical portion 21a of the gas supply nozzle 21 is fitted in the concave groove. By the fitting of the vertical portion 21a and the concave groove, the vertical portion 21a is restricted from falling in the circumferential direction. Further, by adjusting the nozzle inclination adjusting screw 29, the inclination of the vertical portion 21a in the radial direction is adjusted.

  As described above, in the structure of the conventional manifold portion, the protective tube 12 and the gas supply nozzle 21 are supported by the metallic member, and the structure and shape are complicated.

  For this reason, the self-cleaning takes time, and the metal contamination greatly exceeds the reference value due to the corrosion of the metal material by the corrosive gas used during the self-cleaning. In order to suppress this metal contamination, film formation on the metal member surface, pre-coating, or periodic parts replacement is performed.

  However, the film formation and pre-coating on the surface of the metal member is a useless time that does not contribute to the production of semiconductor devices and substrate processing. It becomes a factor of the occupancy rate decline.

JP 2002-334868 A

  In view of such circumstances, the present invention uses non-metallic components as components adjacent to the processing chamber, reduces metal contamination, simplifies the structure, shortens the cleaning time, extends the cleaning interval, and increases the maintenance cycle. To improve product quality, throughput, and operation rate.

  The present invention relates to a reaction tube for processing a substrate therein, and a manifold that is connected to the reaction tube and includes a non-metallic member having a protruding portion that protrudes from the inner wall of the reaction tube toward the axial center of the reaction tube. And a protective tube that is provided in the reaction tube while being held by the manifold and is formed of a non-metallic member, and a non-metallic member that is provided in the protruding portion and suppresses the movement of the protective tube. The present invention relates to a substrate processing apparatus provided with a protective tube movement suppressing portion formed of a member, and relates to a substrate processing apparatus in which a groove for suppressing movement of the protective tube is formed on the inner wall side of the protruding portion. Is.

  In the present invention, the substrate held by the lid is carried into the reaction tube made of a nonmetallic member, and is connected to the reaction tube, and protrudes from the inner wall of the reaction tube to the axial center side of the reaction tube. A step of closing an opening of a manifold made of a non-metallic member with the lid, and a protective tube movement restraining portion made of a non-metallic member while being held by the manifold. The inside of the reaction tube is heated and the inside of the reaction tube is heated while detecting the temperature in the reaction tube with a temperature detector housed in the protection tube by suppressing the movement of the protection tube made of a nonmetallic member. And a step of opening the opening of the manifold with the lid while carrying the substrate out of the reaction tube.

  According to the present invention, a reaction tube for processing a substrate therein, and a non-metallic member connected to the reaction tube and having a protruding portion protruding from the inner wall of the reaction tube toward the axial center of the reaction tube. And a temperature detector, which is provided in the reaction tube while being held by the manifold, and a protection tube made of a non-metallic member, and provided in the protruding portion, to suppress the movement of the protection tube Because it is equipped with a protective tube movement suppression part made of non-metallic material, metal contamination can be suppressed, work is easy and reproducible, cleaning time and maintenance time can be shortened, and maintenance intervals are extended. It is possible to reduce the number of gas stays, improve the exhaust speed, and further suppress the generation of particles.

  Further, according to the present invention, the substrate held by the lid is carried into the reaction tube made of a non-metallic member, and is connected to the reaction tube, and is located on the axial center side of the reaction tube from the inner wall of the reaction tube. The manifold is held by the manifold with a step of closing the opening of the manifold made of a non-metallic member with the lid, and a protective tube movement suppressing portion made of the non-metallic member. While suppressing the movement of a protection tube made of a non-metallic member provided in the reaction tube, the inside of the reaction tube is heated while detecting the temperature in the reaction tube with a temperature detector housed in the protection tube. And the step of processing the substrate and the step of opening the opening of the manifold with the lid while carrying the substrate out of the reaction tube, so that metal contamination can be suppressed, and the operation is simple and reproducible. , Cleanin It can be shortened shortening maintenance time period, maintenance execution interval can be prolonged, less retention portion of the gas, can improve evacuation rate, further exhibits an excellent effect that generation of particles can be suppressed.

  The best mode for carrying out the present invention will be described below with reference to the drawings.

  1 and 2 show a substrate processing apparatus according to the present invention. FIG. 2 is an enlarged view of the lower part of the substrate processing apparatus.

  In the figure, reference numeral 31 denotes a heater base, and a cylindrical heater 32 is erected on the heater base 31. A reaction tube 33 is concentrically provided inside the heater 32, and the reaction tube 33 is composed of a cylindrical outer tube 34 and an inner tube 35 having an open upper end, and the outer tube 34 and the inner tube 35 are formed. A cylindrical space 36 is formed between the outer tube 34 and the inner tube 35.

  The outer tube 34 is made of a heat-resistant material such as quartz or silicon carbide, which is a non-metallic member, and the inner tube 35 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC). ing.

  Inside the inner tube 35, a boat 37, which is a substrate holder, is loaded. The boat 37 holds wafers 38 in a horizontal posture in multiple stages in the vertical direction. The boat 37 is made of a heat resistant material such as quartz or silicon carbide.

  In addition, a plurality of heat insulating plates 39 as heat insulating members are arranged in a multistage in a horizontal posture at the lower portion of the boat 37. The heat insulating plate 39 is formed into a disk shape using a heat resistant material such as quartz or silicon carbide. The heat insulating plate 39 makes it difficult for heat from the heater 32 to be transmitted to the seal cap 52 (described later) side.

  A manifold 41 is disposed concentrically with the outer tube 34 below the outer tube 34, and the outer tube 34 and the inner tube 35 are placed on the manifold 41. A processing chamber 4 is defined by the reaction tube 33 and the manifold 41. The manifold 41 is made of a heat resistant material such as quartz or silicon carbide, which is a non-metallic member.

  An exhaust pipe 42 is connected to the outer tube 34 so as to communicate with the lower part of the cylindrical space 36, and an exhaust device 43 such as a vacuum pump is connected to the exhaust pipe 42 via a pressure sensor 44 and a pressure adjustment device 45. It is connected. The exhaust device 43 exhausts through the exhaust pipe 42 so that the pressure in the processing chamber 4 becomes a predetermined pressure (degree of vacuum).

  A pressure control unit 46 is electrically connected to the pressure sensor 44 and the pressure adjusting device 45 by an electrical wiring B. The pressure control unit 46 controls the pressure adjusting device 45 based on the pressure detected by the pressure sensor 44 so that the pressure in the processing chamber 4 becomes a desired pressure and at a desired timing. .

  The exhaust pipe 42 has an inclined portion 42a. The inclined portion 42a is inclined so as to extend from the heater base 31 to an outer tube receiver described later. By providing the inclined portion 42a in the exhaust pipe 42, the height of the reaction tube 33 outside the soaking area can be reduced.

  Here, when the height of the reaction tube 33 outside the soaking area is increased, the wafer 38 is disposed in the soaking area formed by the heater 32 unless the height of the boat 37 is increased accordingly. Can not do it. When the boat 37 is raised, the height of the standby chamber (preliminary chamber) below the reaction tube 33 needs to be increased accordingly. For this reason, when the height of the reaction tube 33 outside the soaking area is increased, the height of the entire substrate processing apparatus is required by about twice the height of that portion.

  By providing the inclined portion 42a in the exhaust pipe 42 as described above, the height of the reaction tube 33 outside the soaking area can be reduced, so that the height of the entire substrate processing apparatus is about twice as much. Can be reduced.

  A gas supply nozzle 21 is provided in the manifold 41 so as to communicate with the processing chamber 4. A gas supply pipe 47 is connected to the gas supply nozzle 21.

  An MFC (mass flow controller) 48 as a gas flow rate controller is connected to the gas supply pipe 47 on the opposite side (upstream side) to the connection side with the gas supply nozzle 21, and the MFC 48 is a gas supply source 49. It is connected to the. The gas supply source 49 supplies a processing gas and an inert gas.

  A gas flow rate control unit 51 is electrically connected to the MFC 48 by an electric wiring C. The gas flow rate control unit 51 controls the MFC 48 at a desired timing so that the flow rate of the supplied gas becomes a desired amount.

  The seal cap 52 is provided below the reaction tube 33. The seal cap 52 constitutes a lid that can close the furnace port 7 in an airtight manner. The seal cap 52 is formed into a disk shape using a metal material such as stainless steel or nickel alloy.

  A seal cap cover 53 is provided on the seal cap 52 on the processing chamber 4 side. The seal cap cover 53 is formed of, for example, a non-metallic material such as quartz, and comes into contact with the lower surface of the manifold 41 from below. The seal cap cover 53 covers the upper surface of the seal cap 52 to prevent the metal portion from being exposed to the processing chamber 4 side. The joint surface between the manifold 41 and the seal cap cover 53 and the joint surface between the seal cap cover 53 and the seal cap 52 are hermetically sealed by a seal member such as an O-ring.

  A flange 54 is provided on the lower surface of the seal cap 52, and a rotation mechanism 55 is installed at the center of the lower surface of the flange 54 via a bearing 56. A rotating shaft 57 of the rotating mechanism 55 is supported by the bearing 56 so as to be rotatable in an airtight manner, and a boat receiver 58 is fixed to an upper end of the bearing 56 so as to rotate integrally with the rotating shaft 57.

  The boat receiver 58 is made of, for example, a metal such as stainless steel or a nickel alloy, and is formed in a two-stage cylindrical shape having a large diameter at the top and a small diameter at the bottom. A pedestal 59 is mounted on the boat receiver 58 so as to rotate integrally with the boat receiver 58 and the rotary shaft 57. The pedestal 59 has a cylindrical shape and is formed of alumina ceramics, transparent quartz, or opaque quartz. ing.

  The boat receiver 58 and the pedestal 59 are accommodated in a circular hole formed in the center of the flange 54 and the seal cap 52 in a non-contact manner. The boat 37 is placed on the pedestal 59 so as to rotate integrally with the pedestal 59.

  The boat receiver 58 and the pedestal 59 can be attached to and detached from the rotating shaft 57 from above, and the boat receiver 58 and the pedestal 59 and the flange 54 and the bearing 56 and the rotating shaft 57 and The rotation mechanism 55 can be attached and removed from below the seal cap 52 in a state where the seal cap 52 closes the lower end opening (furnace port) of the manifold 41.

  Accordingly, the seal cap cover 53 is removed from or attached to the seal cap 52 with the rotation mechanism 55, the bearing 56, the boat receiver 58 and the pedestal 59 installed on the flange 54. The efficiency of maintenance work for the seal cap 52, the seal cap cover 53, the flange 54, the pedestal 59, the boat receiver 58, the rotating shaft 57, the bearing 56, the rotating mechanism 55, etc. is improved. Can be made.

  Further, by reducing the work on the processing chamber 4 side from the seal cap 52, it is possible to reduce contamination in the processing chamber due to dust generation from the human body and contamination in the processing chamber due to dust generation when the screw member is rotated.

  Since the boat receiver 58 is housed in the center of the flange 54 and the seal cap 52 and is located below the seal cap cover 53, the radiant heat in the processing chamber 4 is applied to the seal cap cover 53 and the pedestal. It is possible to suppress radiation through 59 and radiate to the boat receiver 58, and it is possible to prevent process gas and cleaning gas in the processing chamber 4 from being directly exposed to the boat receiver 58. Therefore, the phenomenon that the boat receiver 58 formed of the metal material is excessively heated can be prevented, and the boat receiver 58 can be hardly exposed to the corrosive gas. As a result, metal contamination by the metal boat receiver 58 can be reduced.

  Preferably, the upper surface of the boat receiver 58 is positioned below the lower surface of the seal cap cover 53, but at least the upper surface of the boat receiver 58 is lower than the upper surface of the seal cap cover 53. It only has to be located.

  Further, an inert gas is allowed to flow through the portion in which the boat receiver 58 and the pedestal 59 are accommodated, whereby the atmosphere in the processing chamber 4 is changed to the boat receiver 58, the flange 54, the rotating shaft 57, and the bearing 56. You may make it prevent contacting.

  Further, since the pedestal 59 is made of alumina ceramics, transparent quartz or opaque quartz, even if the pedestal 59 is exposed in the processing chamber 4 in the seal cap cover 53, the pedestal 59 is caused. Metal contamination in the processing chamber 4 can be prevented.

  The pedestal 59 is preferably made of alumina ceramics. In the case of alumina ceramics, since the mechanical strength is greater than that of quartz, it is possible to prevent the boat 37 or the pedestal 59 from being chipped or broken when the boat 37 is placed on the pedestal 59. .

  The boat elevator 61 is provided below the reaction tube 33, and the boat elevator 61 has a lifting arm 62 extending in the horizontal direction, and a base 63 is horizontally supported by the lifting arm 62. The boat elevator 61 raises and lowers the boat 37 in the vertical direction, and loads the boat 37 into and out of the processing chamber 4.

  A drive control unit 64 is electrically connected to the rotation mechanism 55 and the boat elevator 61 by an electric wiring A. The drive control unit 64 controls the rotation mechanism 55 and the boat elevator 61 so as to perform a desired operation and at a desired timing.

  A temperature sensor housed in a protection tube 65 made of quartz is installed in the processing chamber 4.

  A temperature control unit 66 is electrically connected to the heater 32 and the temperature sensor by an electric wiring D. The temperature control unit 66 determines whether the heater 32 is energized based on temperature information detected by the temperature sensor so that the temperature in the processing chamber 4 has a desired temperature distribution and at a desired timing. Control.

  The pressure control unit 46, the gas flow rate control unit 51, the drive control unit 64, and the temperature control unit 66 also constitute an operation unit and an input / output unit, and are electrically connected to a main control unit 67 that controls the entire substrate processing apparatus. Connected.

  The pressure control unit 46, the gas flow rate control unit 51, the drive control unit 64, the temperature control unit 66, and the main control unit 67 constitute a controller 68.

  Next, a support structure for the manifold 41 and the protective tube 65 will be described with reference to FIGS.

  The manifold 41 is made of transparent quartz or opaque quartz as a non-metallic member, and is formed in a circular ring-shaped flat block shape.

  The manifold 41 will be described with reference to FIG.

  The manifold 41 has an inner peripheral portion 72 that is one step higher than the outer peripheral portion 71, and a cylindrical ring portion 73 is erected along the peripheral edge of the inner peripheral portion 72. The outer tube 34 is placed on the outer peripheral portion 71, and the inner tube 35 is placed on the inner peripheral portion 72. The inner tube 35 is fitted into the cylindrical ring portion 73 with an appropriate gap, and the gap prevents interference due to a difference in thermal expansion between the inner tube 35 and the manifold 41. .

  The inner diameter of the manifold 41 is smaller than the inner diameter of the outer tube 34, the manifold 41 protrudes toward the center side from the inner wall of the outer tube 34, and a part of the inner peripheral portion 72 and the cylindrical ring portion 73 are A protruding portion 74 is formed.

  4 to 10, the support structure for the protective tube 65 will be described. In the figure, the temperature sensor in the protective tube 65 is not shown.

  A protective tube insertion hole 76 is formed in the manifold 41 in the radial direction, and a protective tube support port 11 protruding outward is provided on the extension of the protective tube insertion hole 76. A protective tube storage groove 78 is formed so as to leave the groove bottom 77 from the upper surface of the inner peripheral portion 72. The protective tube storage groove 78 opens to the processing chamber 4 side, communicates with the protective tube insertion hole 76, and the center line of the protective tube storage groove 78 is orthogonal to the center line of the protective tube insertion hole 76. The groove width of the protective tube housing groove 78 is such that the protective tube 65 fits into the protective tube housing groove 78 without rattling.

  A portion of the cylindrical ring portion 73 corresponding to the protective tube housing groove 78 is cut out to form a notch 79. A bulging portion 81 having an arcuate cross section is formed in the inner tube 35 so as to surround the portion where the protective tube storage groove 78 is formed on the processing chamber 4 side. 65 and the inner tube 35 are avoided, and the notch 79 prevents the cylindrical ring portion 73 and the bulging portion 81 from interfering with each other.

  The horizontal portion 65 b of the protective tube 65 is inserted into the protective tube housing groove 78 from the center side of the manifold 41, and the vertical portion 65 a of the protective tube 65 is fitted in the protective tube housing groove 78. A pipe joint 82 is provided between the horizontal portion 65b and the protective tube support port 11, and fixes the horizontal portion 65b to the protective tube support port 11 and hermetically seals the gap therebetween.

  The vertical portion 65a and the horizontal portion 65b are continuous by a bent portion 65c, and a non-metallic member, for example, a locking block 83 made of quartz is fixed to the outer peripheral surface side of the bent portion 65c. The locking block 83 has a quadrangular pyramid shape having a horizontal bottom surface and a vertical inner surface, and the bottom surface of the locking block 83 faces the groove bottom portion 77. A predetermined gap 84 is formed between the bottom surface of the locking block 83 and the top surface of the groove bottom portion 77.

  A locking A recess 85 is drilled in the upper surface of the groove bottom 77, and a locking B recess 86 is drilled in the bottom of the locking block 83, and the locking B recess 86 and the locking A recess 85 are formed. Are arranged so that their horizontal positions match.

  A locking piece 87 shown in FIG. 10 is provided between the groove bottom 77 and the locking block 83. As will be described later, the locking piece 87 functions as a protective tube movement suppressing portion that suppresses the movement of the protective tube 65.

  The locking piece 87 is made of a non-metallic member such as quartz, and the locking piece 87 has a shape having hook pieces 89 and 90 at both ends of the shaft portion 88. The hook pieces 89 and 90 may have different shapes, but preferably have the same shape. Moreover, it is preferable that the flanges 89 and 90 have a shape that is long in one direction so that the posture can be understood. Furthermore, the hook piece 90 may have any shape that allows the locking piece 87 to be rotated manually.

  The thickness T of the flanges 89 and 90 is set to be the same as or slightly smaller than the gap 84 and can be stored in the gap 84. The cross-sectional shape of the shaft portion 88 is set so that the shaft portion 88 can rotate within the gap 84 and is held at least every 90 °. For example, as shown in FIG. 10, the cross section is octagonal, and the length of the diagonal line is the same as or slightly smaller than the gap 84. Since the cross section is an octagon, the locking piece 87 is maintained in posture every 45 °. The shaft 88 may have a square cross section.

  In addition, in order to allow the locking piece 87 to be easily inserted into and removed from the gap 84, the side surfaces of the flange pieces 89 and 90 and the side surface of the shaft portion 88 are flush with each other.

  Of the collar pieces 89 and 90, at least the collar piece 89 can be fitted into and detached from the locking A recess 85 and the locking B recess 86 by the rotation of the locking piece 87.

  Thus, with the horizontal portion 65 b inserted into the protective tube insertion hole 76 and the vertical portion 65 a fitted in the protective tube storage groove 78, the locking piece 87 is in a horizontal posture, and the gap 84 And the locking piece 87 is rotated by 90 °, so that the hook piece 89 is fitted over the locking A recess 85 and the locking B recess 86. Whether or not the flange 89 is fitted in the locking A recess 85 and the locking B recess 86 can be determined from the posture of the flange 90.

  The movement of the protective tube 65 in the horizontal direction is restrained by fitting the flange piece 89 into the locking A recess 85 and the locking B recess 86, and the vertical portion 65a is connected to the protection tube storage groove. 78, the movement of the vertical portion 65a in the circumferential direction (the rotation direction about the horizontal portion 65b) is restricted, and the protective tube 65 is positioned.

  Further, when removing the protective tube 65, the locking piece 87 is rotated 90 ° to be in a horizontal posture, and if the locking piece 87 is removed, there is no one that restrains the protective tube 65 in the horizontal direction. The protective tube 65 is easily pulled out to the processing chamber 4.

  As described above, in the support structure of the protective tube 65, metal members such as the protective tube support fitting 13 and the inclination adjusting screw 15 shown in FIG. 16 are not used, and the simple shape and the simple structure are used. In order to remove and attach the protective tube 65, it is only necessary to rotate the locking piece 87. Further, there is no obstacle when the protective tube 65 is pulled out to the processing chamber 4 side. It can be easily attached and detached. If the position of the protective tube is shifted, the temperature detection position is shifted. In particular, when the temperature detector or the protective tube is removed from the manifold during maintenance, the temperature detection position will be shifted the next time it is installed. Due to the deviation of the detection positions, the temperature distribution of the processing chamber when the processing chamber is heated fluctuates, which adversely affects the heat treatment of the wafer. However, according to the aspect of the present invention, since the protection tube and the temperature detector can be easily positioned and attached, the adverse effect on the heat treatment of the wafer can be suppressed.

  The present invention can also be implemented for the manifold 3 shown in FIG. For example, by providing the manifold 3 with a projecting portion 74 projecting toward the center, and fixing the locking block 83 to the bent portion 12c, the locking piece is provided between the locking block 83 and the protruding portion 74. 87 can be locked and released.

  Next, a support structure for the gas supply nozzle 21 will be described with reference to FIGS. 4, 5, and 11 to 13.

  A nozzle insertion hole 92 is formed in the manifold 41 in the radial direction, and a nozzle support port 93 protruding outward is provided on the extension of the nozzle insertion hole 92. A nozzle receiving groove 94 is formed so as to leave the groove bottom 95 from the upper surface of the inner peripheral portion 72.

  The nozzle storage groove 94 is open to the processing chamber 4 side, communicates with the nozzle insertion hole 92, and the center line of the nozzle storage groove 94 is orthogonal to the center line of the nozzle insertion hole 92. The groove width of the groove 94 is a value that allows the gas supply nozzle 21 to be fitted into the nozzle housing groove 94 without rattling. The groove bottom portion 95 is in contact with the horizontal portion 21 b of the gas supply nozzle 21, and in the contacted state, the center of the horizontal portion 21 b is set to coincide with the center of the nozzle insertion hole 92.

  The horizontal portion 21 b of the gas supply nozzle 21 is inserted into the nozzle insertion hole 92 from the center side of the manifold 41, and the vertical portion 21 a of the gas supply nozzle 21 is fitted in the nozzle housing groove 94. In the fitted state, the inclination of the gas supply nozzle 21 and the rotation of the vertical portion 21a around the horizontal portion 21b are constrained and kept vertical.

  A pipe joint 96 is provided between the horizontal portion 21b and the nozzle support port 93 to fix the horizontal portion 21b to the nozzle support port 93 and to hermetically seal the gap therebetween.

  Thus, the gas supply nozzle 21 can be positioned together with the vertical position and the tilted position simply by inserting the horizontal portion 21b into the nozzle support port 93 and fixing the horizontal portion 21b with the pipe joint 96. Is done.

  As described above, in the support structure of the gas supply nozzle 21, metal members such as the nozzle support fitting 28 and the nozzle tilt adjusting screw 29 shown in FIG. Due to the structure, the attachment / detachment work may be simply the attachment / detachment of the pipe joint 96, and there is no obstacle when the gas supply nozzle 21 is pulled out to the processing chamber 4 side, and the attachment / detachment of the gas supply nozzle 21 is easy. Yes.

  The above-described support structure for the gas supply nozzle 21 can also be implemented for the manifold 3 shown in FIG. That is, a protrusion 74 may be formed on the manifold 3 so as to protrude toward the center, and the protrusion 74 may support the horizontal portion 21b.

  Further, regarding the support structure of the gas supply nozzle 21, when it is necessary to restrain the movement of the gas supply nozzle 21 in the horizontal direction, for example, the gas supply nozzle 21 is displaced in the horizontal direction due to a large amount of gas supply. In such a case, the support structure for the protective tube 65 shown in FIGS. 6 to 10 may be applied. That is, the gas supply nozzle 21 is provided with a bent portion 65 c and a locking block 83, a locking A concave portion 85 is projected on the upper surface of the groove bottom portion 95, and a locking B concave portion 86 is formed on the bottom surface of the locking block 83. The locking piece 87 may be provided so as to project and to fit the hook 89 over the locking A recess 85 and the locking B recess 86. That is, the support structures shown in FIGS. 6 to 10 are effective as the support structure of the pipe material like the protective tube 65 and the gas supply nozzle 21.

  In the present invention, the fall prevention means 99 is provided when a horizontal force or a vertical force is applied to the inner tube 35 during an earthquake or the like (see FIGS. 11 to 15).

  A shaft hole 101 is horizontally drilled in at least three locations of the cylindrical ring portion 73, for example, at a position equally divided into three circumferences, and a non-metallic member, for example, a quartz fall prevention member 102 is rotated in the shaft hole 101. Mount freely.

  The overturn prevention member 102 has a shaft portion 103 and a locking piece 104 provided in an orthogonal state on the outer end of the shaft portion 103.

  A locking groove 105 extending in a tangential direction that circumscribes the cylindrical ring portion 73 directly below the shaft hole 101 is engraved in the outer peripheral portion 71, and the locking piece 104 can be fitted into and removed from the outer peripheral portion 71. To do.

  The shaft portion 103 is fitted into the shaft hole 101 with a predetermined gap, and the fall prevention means 99 is rotatably supported by the shaft hole 101. The shaft portion 103 penetrates the cylindrical ring portion 73 so that the inner end protrudes, and the inner end contacts the upper surface of the inner flange 26 of the inner tube 35. Further, the locking piece 104 hangs down in a vertical state by its own weight and is loosely fitted in the locking groove 105. In the state in which the locking piece 104 is loosely fitted in the locking groove 105, the fall prevention member 102 moves in the horizontal direction by the amount of play between the locking piece 104 and the locking groove 105. The shaft hole 101 does not come off. Further, when the inner tube 35 falls, the shaft portion 103 engages with the inner flange 26, so that the inner tube 35 is prevented from falling.

  Accordingly, it is possible to prevent the inner tube 35 from falling by simply mounting the tipping prevention member 102 in the shaft hole 101. When the fall prevention member 102 is removed, the fall prevention member 102 is centered on the shaft portion 103 in a state where the outer tube 34 is removed or the manifold 41 is removed from the outer tube 34. It is only necessary to slightly rotate and remove from the shaft hole 101.

  Further, unlike the prior art shown in FIG. 17, there is no need for complicated work such as tightening the inner tube presser 24 of the metal member with the bolt 25 of the metal member, and the fall prevention member 102 is made of quartz. There is no worry about corrosion or metal contamination.

  The fall prevention means 99 according to the present invention can also be implemented for the manifold 3 shown in FIG. For example, a projecting portion 74 may be formed on the manifold 3, a cylindrical ring portion 73 may be formed on the projecting portion 74, and the inner tube 35 may be fitted into the cylindrical ring portion 73.

  Next, a film forming process in an IC manufacturing method according to an embodiment of the present invention using the substrate processing apparatus having the above configuration will be described.

  In the following description, the operation of each part constituting the CVD apparatus is controlled by the controller 68.

  When a predetermined number of wafers 38 are loaded into the boat 37, the boat 37 is raised by the boat elevator 61 and loaded into the processing chamber 4 as shown in FIG.

  In this state, the seal cap 52 is in a state of hermetically sealing the lower surface (furnace port) of the manifold 41.

  The processing chamber 4 is evacuated by the evacuation device 43 so as to have a desired pressure (degree of vacuum). At this time, the pressure in the processing chamber 4 is detected by the pressure sensor 44, and the pressure adjusting device 45 is feedback-controlled based on the detected pressure.

  Further, the processing chamber 4 is heated by the heater 32 so as to reach a desired temperature. At this time, the power supply to the heater 32 is feedback-controlled based on temperature information detected by the temperature sensor so that the inside of the processing chamber 4 has a desired temperature and temperature distribution. Subsequently, the wafer 38 is rotated in the processing chamber 4 via the boat 37 by the rotation mechanism 55.

  The gas supplied from the gas supply source 49 and controlled to have a desired flow rate by the MFC 48 is introduced into the processing chamber 4 from the gas supply nozzle 21 through the gas supply pipe 47.

  The introduced gas rises in the processing chamber 4, flows down from the upper end opening of the inner tube 35 into the cylindrical space 36, and is exhausted from the exhaust pipe 42.

  As the gas passes through the processing chamber 4, the gas contacts the surface of the wafer 38, and at this time, a thin film is deposited on the surface of the wafer 38 by a thermal CVD reaction.

  When a preset processing time elapses, an inert gas is supplied from the gas supply source 49, the inside of the processing chamber 4 is replaced with an inert gas, and the pressure in the processing chamber 4 is returned to normal pressure. Will be restored.

  Thereafter, the seal cap 52 is lowered by the boat elevator 61, the lower end of the processing chamber 4 is opened, and the processed wafer 38 is held by the boat 37, and is then placed outside the processing chamber 4. It is carried out. The processed wafer 38 is discharged from the boat 37.

  Although the CVD apparatus has been described in the above embodiment, the present invention is not limited to this, and can be applied to general substrate processing apparatuses such as a heat treatment apparatus used for heat treatment such as annealing, oxidation, diffusion, and reflow. The substrate is not limited to a wafer, but may be a photomask, a printed wiring board, a liquid crystal panel, an optical disk, a magnetic disk, or the like.

  Although the reaction tube has been described as the double tube specification of the outer tube and the inner tube, the present invention can be applied even to the single tube specification of only the outer tube.

(Appendix)
The present invention includes the following embodiments.

  (Appendix 1) A manifold comprising a reaction tube for processing a substrate inside, and a non-metallic member that is connected to the reaction tube and has a protrusion protruding from the inner wall of the reaction tube toward the axial center of the reaction tube And a protective tube that is provided in the reaction tube while being held by the manifold and is formed of a non-metallic member, and a non-metallic member that is provided in the protruding portion and suppresses the movement of the protective tube. A substrate processing apparatus, comprising: a protective tube movement suppressing portion formed of a member.

  (Additional remark 2) The said protection pipe movement suppression part has a hook piece at least at one end, and the said hook piece spans the said protection pipe and the said manifold by rotation of the said protection pipe movement suppression part, and can be fitted or detached. The substrate processing apparatus of appendix 1.

  (Additional remark 3) The said protective pipe has a horizontal part which penetrates the said manifold to a horizontal direction, and a vertical part which stands up along a reaction pipe, and is a locking block at the corner part of the said horizontal part and the said vertical part The projecting portion has a protective tube storage groove into which the vertical portion of the protective tube is fitted and a groove bottom portion facing the locking block, and the protective tube is interposed between the groove bottom portion and the locking block. The substrate processing apparatus according to appendix 1, wherein a gap for accommodating the movement suppressing unit is formed.

  (Supplementary note 4) The substrate processing apparatus according to supplementary note 3, wherein a locking recess is formed on each of the bottom surface of the locking block and the top surface of the groove bottom portion, and the flange piece can be fitted into and removed from both the locking recesses.

  (Additional remark 5) The reaction tube which processes a board | substrate inside, and the manifold comprised by the non-metallic member which has the protrusion part which was connected to this reaction tube and protruded from the inner wall of this reaction tube to the axial center side of this reaction tube A tube material that is provided in the reaction tube while being held by the manifold and is configured by a non-metallic member, and a tube material movement suppression unit that is provided at the protrusion and is configured by a non-metal member that suppresses the movement of the tube material. A substrate processing apparatus comprising:

It is sectional drawing of the substrate processing apparatus which concerns on embodiment of this invention. It is a lower expanded sectional view of this substrate processing apparatus. It is the perspective view which looked at the manifold part in this substrate processing apparatus from the lower part. It is the fragmentary perspective view which looked at this manifold part from the upper part. It is a perspective view of this manifold simple substance. It is sectional drawing of the protective tube support part in embodiment of this invention. It is an AA arrow line view of FIG. It is a cross-sectional perspective view of the said protective tube support part. It is the B section enlarged view of FIG. It is an expansion perspective view of the locking piece used for the said protective tube support part. It is sectional drawing of the gas supply nozzle support part in embodiment of this invention. It is CC arrow line view of FIG. It is D arrow line view of FIG. It is a perspective view of the fall prevention means in the embodiment of the present invention. It is the E section enlarged view of FIG. It is sectional drawing which shows the protective tube support structure in the conventional substrate processing apparatus. It is sectional drawing which shows the gas supply nozzle support structure in the conventional substrate processing apparatus.

Explanation of symbols

4 Processing Chamber 11 Protection Tube Support Port 21 Gas Supply Nozzle 26 Inner Flange 33 Reaction Tube 34 Outer Tube 35 Inner Tube 37 Boat 41 Manifold 52 Seal Cap 65 Protection Tube 73 Cylindrical Ring Portion 74 Projection Portion 76 Protection Tube Insertion Hole 77 Groove Bottom Portion 78 Protective tube storage groove 79 Notched portion 81 Swelling portion 84 Gap 85 Locking A recess 86 Locking B recess 87 Locking piece 89 Hook piece 92 Nozzle insertion hole 94 Nozzle storage groove 99 Fall prevention means 102 Fall prevention member 104 Locking Piece 105 locking groove

Claims (3)

  A reaction tube for processing a substrate therein, a manifold connected to the reaction tube, and a manifold made of a nonmetallic member having a protruding portion protruding from the inner wall of the reaction tube toward the axial center of the reaction tube; and temperature detection And a protective tube made of a non-metallic member provided in the reaction tube while being held by the manifold, and a non-metallic member that is provided in the protruding portion and suppresses the movement of the protective tube. A substrate processing apparatus comprising: a protective tube movement suppressing unit.   The substrate processing apparatus according to claim 1, wherein a groove for suppressing movement of the protective tube is formed on an inner wall side of the protruding portion.   While the substrate held by the lid is carried into a reaction tube made of a non-metallic member, a protruding portion connected to the reaction tube and protruding from the inner wall of the reaction tube to the axial center side of the reaction tube is provided. And a step of closing the opening of the manifold made of a non-metallic member by the lid, and being provided in the reaction tube while being held by the manifold by a protective tube movement suppressing portion made of the non-metallic member. Suppressing the movement of the protective tube made of a non-metallic member, heating the reaction tube while detecting the temperature in the reaction tube with a temperature detector housed in the protective tube, and processing the substrate; And a step of opening the opening of the manifold by the lid while carrying the substrate out of the reaction tube.

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