JP2010050129A - Organic electroluminescent element and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an organic electroluminescent element which has improved white luminescent efficiency and is manufactured even in a simple process such as a wet process. <P>SOLUTION: In the organic electroluminescent element having at least an anode, a cathode and a luminescent layer sandwiched by the anode and the cathode and a hole transport layer on a substrate, at least one layer contains a reactive organic compound and is formed by being reacted after film forming, and the following relation is established between the surface roughness Ra1 before reaction and a surface unevenness difference Rt1 and between a surface roughness Ra2 after reaction and a surface unevenness difference Rt2: Ra2-Ra1<0.3 nm and Rt2-Rt1<5.0 nm. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an organic electroluminescence element. More specifically, the present invention relates to an organic electroluminescent element that can be manufactured by a simple process such as a wet process and has improved luminous efficiency and lifetime, and a method for manufacturing the same.

  As a light-emitting electronic display device, there is an electroluminescence display (hereinafter abbreviated as ELD). As a constituent element of ELD, an inorganic electroluminescence element (hereinafter also referred to as an inorganic EL element) and an organic electroluminescence element (hereinafter also referred to as an organic EL element) can be given. Inorganic EL elements have been used as planar light sources, but an alternating high voltage is required to drive the light emitting elements.

  On the other hand, an organic electroluminescence device has a structure in which a light emitting layer containing a compound that emits light is sandwiched between a cathode and an anode, and injects electrons and holes into the light emitting layer and recombines them to exciton (exciton). ), Which emits light by using light emission (fluorescence / phosphorescence) when the exciton is deactivated, and can emit light at a voltage of several V to several tens of V, and further self-emission. Since it is a type, it has a wide viewing angle, high visibility, and since it is a thin-film type completely solid element, it has attracted attention from the viewpoints of space saving, portability, and the like.

  Another major feature of the organic electroluminescence element is that it is a surface light source, unlike main light sources that have been put to practical use, such as light-emitting diodes and cold-cathode tubes. Applications that can effectively utilize this characteristic include illumination light sources and various display backlights. In particular, it is also suitable to be used as a backlight of a liquid crystal full color display whose demand has been increasing in recent years.

Improvements in light emission efficiency and lifetime are examples of problems for putting an organic electroluminescence element into practical use as such a light source for illumination or a backlight of a display. On the other hand, as a manufacturing method of these organic electroluminescence elements, there are a vapor deposition method, a wet process (spin coating method, casting method, ink jet method, spray method, printing method), etc., but a vacuum process is not required and continuous production is possible. In recent years, a manufacturing method in a wet process has attracted attention because of its simplicity. That is, the organic electroluminescence device manufactured by the wet process is also required to have improved luminous efficiency and lifetime. When manufacturing an organic electroluminescence element composed of a plurality of layers by a wet process, it is necessary to insolubilize the previously formed layer. Techniques for curing a reactive organic compound after coating to form a film that does not require an organic solvent are disclosed (for example, see Patent Documents 1 and 2). However, in these embodiments, the energy for curing is only heated. In order to achieve sufficient curing only with heat, it is necessary to expose to high temperature for a long time, not only the productivity is inferior, but also film crystallization by exposing it to a temperature greatly exceeding Tg for a long time. As a result, the morphology is greatly impaired and it is very difficult to form a uniform film. On the other hand, in the case of curing by light irradiation, a large amount of energy is required to obtain sufficient curing, damage to the material is large, and there is a problem of impurity purification by decomposition. In order to improve this, there is a method of adding a small amount of a polymerization initiator, but in this case, a small amount of the polymerization initiator remaining in the film becomes a significant deterioration factor with respect to the lifetime of the light emitting device. Further, it was found that when cured only by light, surface irregularities were generated due to film shrinkage, and sufficient performance could not be obtained even if the device was fabricated by laminating in this state.
Japanese Patent No. 2848207 JP 2001-297882 A

  The present invention has been made in view of the above problems, and an object of the present invention is to provide an organic electroluminescent device with improved white light emission efficiency, and further an organic electroluminescent device that can be manufactured by a simple process such as a wet process. There is to do.

  The above object of the present invention can be achieved by the following constitution.

  1. In an organic electroluminescence device having at least an anode, a cathode, and a light emitting layer and a hole transport layer sandwiched between the anode and cathode on a substrate, at least one layer contains a reactive organic compound and is reacted after film formation An organic electroluminescence device, wherein the surface roughness Ra1 and surface unevenness difference Rt1 before reaction and the surface roughness Ra2 and surface unevenness difference Rt2 after reaction are in the following relationship:

Ra2-Ra1 <0.3nm
Rt2-Rt1 <5.0nm
2. 2. The organic electroluminescence device as described in 1 above, wherein the reactive organic compound is a compound having any one of the following partial structures.

  3. 3. The organic electroluminescence device as described in 1 or 2 above, wherein the reactive organic compound is a hole transport material represented by the following general formula (1).

[In formula, Ar < ₁ > -Ar < ₅ > represents a substituted or unsubstituted phenyl group or a naphthyl group. At least one of Ar _{1 to} Ar ₅ contains a substituent containing the following partial structure. n represents an integer of 1 or 2. ]

  4). 4. The method for producing an organic electroluminescent element according to any one of 1 to 3, wherein the means for reacting the reactive organic compound is irradiation with ultraviolet rays while heating. Manufacturing method of luminescence element.

  5. 5. The method for producing an organic electroluminescent element according to 4 above, wherein the heating temperature T is in the following relationship with respect to the glass transition temperature Tg of the reactive organic compound.

Tg <T <Tg + 100 ° C.
6). 6. The method for producing an organic electroluminescent element according to 4 or 5, wherein the layer containing the reactive organic compound is formed by a wet process.

  An organic electroluminescence device with excellent performance by controlling the difference in surface roughness before and after curing and the difference in surface unevenness by using a reactive organic compound and balancing heating and light irradiation during curing. Could get.

  Hereinafter, the details of each component of the organic electroluminescence device of the present invention (hereinafter also referred to as the organic EL device of the present invention) will be sequentially described.

<< Layer structure of organic EL element >>
Next, although the preferable specific example of the layer structure of the organic EL element of this invention is shown below, this invention is not limited to these.

(I) Anode / hole transport layer / intermediate layer / light emitting layer / electron transport layer / cathode (ii) Anode / hole transport layer / intermediate layer / light emitting layer / hole blocking layer / electron transport layer / cathode (iii) Anode / hole transport layer / intermediate layer / light emitting layer / hole blocking layer / electron transport layer / cathode buffer layer / cathode (iv) Anode / anode buffer layer / hole transport layer / intermediate layer / light emitting layer / hole blocking Layer / electron transport layer / cathode buffer layer / cathode << light emitting layer >>
The light emitting layer according to the present invention is a layer that emits light by recombination of electrons and holes injected from the electrode, the electron transport layer, or the hole transport layer, and the light emitting portion is in the layer of the light emitting layer. May be the interface between the light emitting layer and the adjacent layer.

  The thickness of the light emitting layer is not particularly limited, but from the viewpoint of the uniformity of the film to be formed, the application of unnecessary high voltage during light emission, and the improvement of the stability of the emission color with respect to the drive current. It is preferable to adjust to the range of 2 nm-200 nm, More preferably, it adjusts to the range of 5 nm or more and 100 nm or less.

  The light emitting layer of the organic electroluminescent element according to claim 4 of the present invention is formed by a wet process. Examples of known wet process coating methods include spin coating, casting, inkjet, spraying, printing, etc., but it is easy to obtain a homogeneous film, and pinholes are difficult to generate. In the present invention, film formation by a coating method such as a spin coating method, an ink jet method, a spray method, or a printing method is preferable.

  Hereinafter, a light-emitting dopant (also referred to as a light-emitting dopant compound) and a host compound contained in the light-emitting layer will be described.

(Host compound (also called luminescent host))
The host compound used in the present invention will be described.

  Here, in the present invention, the host compound means a phosphorescent quantum yield of phosphorescence emission at a room temperature (25 ° C.) having a mass ratio of 20% or more in the compound contained in the light emitting layer. Is defined as a compound of less than 0.1. The phosphorescence quantum yield is preferably less than 0.01. Moreover, it is preferable that the mass ratio in the layer is 20% or more among the compounds contained in a light emitting layer.

  As the host compound, known host compounds may be used alone or in combination of two or more. By using a plurality of types of host compounds, it is possible to adjust the movement of charges, and the organic EL element can be made highly efficient. Moreover, it becomes possible to mix different light emission by using multiple types of light emission dopants mentioned later, and, thereby, arbitrary luminescent colors can be obtained.

  The light emitting host used in the present invention may be a conventionally known low molecular compound or a high molecular compound having a repeating unit, and a low molecular compound having a polymerizable group such as a vinyl group or an epoxy group (deposition polymerization property). Light emitting host).

  As a known host compound that may be used in combination, a compound that has a hole transporting ability and an electron transporting ability, prevents the emission of light from being increased in wavelength, and has a high Tg (glass transition temperature) is preferable.

  Specific examples of known host compounds include compounds described in the following documents.

  JP-A-2001-257076, 2002-308855, 2001-313179, 2002-319491, 2001-357777, 2002-334786, 2002-8860, 2002-334787, 2002-15871, 2002-334788, 2002-43056, 2002-334789, 2002-75645, 2002-338579, 2002-105445 gazette, 2002-343568 gazette, 2002-141173 gazette, 2002-352957 gazette, 2002-203683 gazette, 2002-363227 gazette, 2002-231453 gazette, No. 003-3165, No. 2002-234888, No. 2003-27048, No. 2002-255934, No. 2002-286061, No. 2002-280183, No. 2002-299060, No. 2002. -302516, 2002-305083, 2002-305084, 2002-308837, and the like.

(Luminescent dopant)
The light emitting dopant according to the present invention will be described.

  As the light-emitting dopant according to the present invention, a fluorescent dopant (also referred to as a fluorescent compound) or a phosphorescent dopant (also referred to as a phosphorescent emitter, a phosphorescent compound, a phosphorescent compound, or the like) can be used. From the viewpoint of obtaining an organic EL device with high luminous efficiency, the light-emitting dopant used in the light-emitting layer of the organic EL device of the present invention (sometimes simply referred to as a light-emitting material) contains the above host compound, It is preferable to contain a phosphorescent dopant.

(Phosphorescent dopant)
The phosphorescent dopant according to the present invention will be described.

  The phosphorescent dopant according to the present invention is a compound in which light emission from an excited triplet is observed. Specifically, the phosphorescent dopant is a compound that emits phosphorescence at room temperature (25 ° C.) and has a phosphorescence quantum yield of 25. Although it is defined as a compound of 0.01 or more at ° C., a preferable phosphorescence quantum yield is 0.1 or more.

  The phosphorescence quantum yield can be measured by the method described in Spectroscopic II, page 398 (1992 edition, Maruzen) of Experimental Chemistry Course 4 of the 4th edition. Although the phosphorescence quantum yield in a solution can be measured using various solvents, the phosphorescence dopant according to the present invention achieves the phosphorescence quantum yield (0.01 or more) in any solvent. That's fine.

  There are two types of light emission of phosphorescent dopants in principle. One is the recombination of carriers on the host compound to which carriers are transported to generate an excited state of the host compound, and this energy is transferred to the phosphorescent dopant. The energy transfer type that obtains light emission from the phosphorescent dopant, and the other is that the phosphorescent dopant becomes a carrier trap, carrier recombination occurs on the phosphorescent dopant, and light emission from the phosphorescent dopant is obtained. Although it is a trap type, in any case, it is a condition that the excited state energy of the phosphorescent dopant is lower than the excited state energy of the host compound.

  The phosphorescent dopant can be appropriately selected from known materials used for the light emitting layer of the organic EL device.

  The phosphorescent dopant according to the present invention is preferably a complex compound containing a group 8-10 metal in the periodic table of elements, more preferably an iridium compound, an osmium compound, or a platinum compound (platinum complex compound). Rare earth complexes, most preferably iridium compounds.

  Although the specific example of the compound used as a phosphorescence dopant below is shown, this invention is not limited to these. These compounds are described, for example, in Inorg. Chem. 40, 1704-1711, and the like.

  Next, an injection layer, a blocking layer, an electron transport layer, and the like used as a constituent layer of the organic EL element of the present invention will be described.

<< Injection layer: electron injection layer, hole injection layer >>
The injection layer is provided as necessary, and there are an electron injection layer and a hole injection layer, and as described above, it exists between the anode and the light emitting layer or the hole transport layer, and between the cathode and the light emitting layer or the electron transport layer. May be.

  An injection layer is a layer provided between an electrode and an organic layer in order to reduce drive voltage and improve light emission luminance. “Organic EL element and its forefront of industrialization (issued by NTT Corporation on November 30, 1998) 2), Chapter 2, “Electrode Materials” (pages 123 to 166) in detail, and includes a hole injection layer (anode buffer layer) and an electron injection layer (cathode buffer layer).

  The details of the anode buffer layer (hole injection layer) are described in JP-A-9-45479, JP-A-9-260062, JP-A-8-288069 and the like. As a specific example, copper phthalocyanine is used. Examples thereof include a phthalocyanine buffer layer represented by an oxide, an oxide buffer layer represented by vanadium oxide, an amorphous carbon buffer layer, and a polymer buffer layer using a conductive polymer such as polyaniline (emeraldine) or polythiophene.

  The details of the anode buffer layer (hole injection layer) are described in JP-A-9-45479, JP-A-9-260062, JP-A-8-288069 and the like. As a specific example, copper phthalocyanine is used. Examples thereof include a phthalocyanine buffer layer represented by an oxide, an oxide buffer layer represented by vanadium oxide, an amorphous carbon buffer layer, and a polymer buffer layer using a conductive polymer such as polyaniline (emeraldine) or polythiophene.

  Further, a ferrocene compound described in JP-A-6-025658, a starburst type compound described in JP-A-10-233287, a triaryl described in JP-A-2000-068058 and JP-A-2004-6321 Hole-injection layers include amine-type compounds, sulfur-containing ring-containing compounds described in JP-A No. 2002-117879, hexaazatriphenylene compounds described in US 2002-0158242, US 2006-0251922, JP-A 2006-49393, and the like. As mentioned.

  The details of the cathode buffer layer (electron injection layer) are described in JP-A-6-325871, JP-A-9-17574, JP-A-10-74586, and the like. Specifically, strontium, aluminum, etc. Metal buffer layer typified by lithium, alkali metal compound buffer layer typified by lithium fluoride, alkaline earth metal compound buffer layer typified by magnesium fluoride, oxide buffer layer typified by aluminum oxide, etc. . The buffer layer (injection layer) is preferably a very thin film, and the film thickness is preferably in the range of 0.1 nm to 5 μm although it depends on the material.

<Blocking layer: hole blocking layer, electron blocking layer>
The blocking layer is provided as necessary in addition to the basic constituent layer of the organic compound thin film as described above. For example, it is described in JP-A Nos. 11-204258, 11-204359, and “Organic EL elements and their forefront of industrialization” (issued by NTT, Inc. on November 30, 1998). There is a hole blocking (hole blocking) layer.

  The hole blocking layer has a function of an electron transport layer in a broad sense, and is made of a hole blocking material that has a function of transporting electrons and has a remarkably small ability to transport holes. The probability of recombination of electrons and holes can be improved by blocking. Moreover, the structure of the electron carrying layer mentioned later can be used as a hole-blocking layer concerning this invention as needed.

  The hole blocking layer of the organic EL device of the present invention is preferably provided adjacent to the light emitting layer.

  The hole blocking layer preferably contains the azacarbazole derivative mentioned as the host compound.

  In the present invention, when a plurality of light emitting layers having different light emission colors are provided, the light emitting layer having the shortest wavelength of light emission is preferably closest to the anode among all the light emitting layers. In this case, it is preferable to additionally provide a hole blocking layer between the shortest wave layer and the light emitting layer next to the anode next to the anode. Furthermore, it is preferable that 50% by mass or more of the compound contained in the hole blocking layer provided at the position has an ionization potential of 0.3 eV or more larger than the host compound of the shortest wave emitting layer.

  The ionization potential is defined by the energy required to emit an electron at the HOMO (highest occupied molecular orbital) level of the compound to the vacuum level, and can be obtained by the following method, for example.

  (1) Using Gaussian 98 (Gaussian 98, Revision A.11.4, MJ Frisch, et al, Gaussian, Inc., Pittsburgh PA, 2002.), a molecular orbital calculation software manufactured by Gaussian, USA The ionization potential can be obtained as a value obtained by rounding off the second decimal place of the value (eV unit converted value) calculated by performing structural optimization using B3LYP / 6-31G *. This calculation value is effective because the correlation between the calculation value obtained by this method and the experimental value is high.

  (2) The ionization potential can also be obtained by a method of directly measuring by photoelectron spectroscopy. For example, a method known as ultraviolet photoelectron spectroscopy can be suitably used by using a low energy electron spectrometer “Model AC-1” manufactured by Riken Keiki Co., Ltd.

  On the other hand, the electron blocking layer has a function of a hole transport layer in a broad sense, and is made of a material that has a function of transporting holes and has an extremely small ability to transport electrons, and transports electrons while transporting holes. By blocking, the recombination probability of electrons and holes can be improved. Moreover, the structure of the positive hole transport layer mentioned later can be used as an electron blocking layer as needed. The film thickness of the hole blocking layer and the electron transport layer according to the present invention is preferably 3 nm to 100 nm, and more preferably 5 nm to 30 nm.

《Hole transport layer》
The hole transport layer is made of a hole transport material having a function of transporting holes, and in a broad sense, a hole injection layer and an electron blocking layer are also included in the hole transport layer. The hole transport layer can be provided as a single layer or a plurality of layers.

  The hole transport material has any one of hole injection or transport and electron barrier properties, and may be either organic or inorganic. For example, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives and pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, Examples thereof include stilbene derivatives, silazane derivatives, aniline copolymers, and conductive polymer oligomers, particularly thiophene oligomers.

  The above-mentioned materials can be used as the hole transport material, but it is preferable to use a porphyrin compound, an aromatic tertiary amine compound and a styrylamine compound, particularly an aromatic tertiary amine compound.

  Representative examples of aromatic tertiary amine compounds and styrylamine compounds include N, N, N ′, N′-tetraphenyl-4,4′-diaminophenyl; N, N′-diphenyl-N, N′— Bis (3-methylphenyl)-[1,1′-biphenyl] -4,4′-diamine (TPD); 2,2-bis (4-di-p-tolylaminophenyl) propane; 1,1-bis (4-di-p-tolylaminophenyl) cyclohexane; N, N, N ′, N′-tetra-p-tolyl-4,4′-diaminobiphenyl; 1,1-bis (4-di-p-tolyl) Aminophenyl) -4-phenylcyclohexane; bis (4-dimethylamino-2-methylphenyl) phenylmethane; bis (4-di-p-tolylaminophenyl) phenylmethane; N, N'-diphenyl-N, N ' Di (4-methoxyphenyl) -4,4'-diaminobiphenyl; N, N, N ', N'-tetraphenyl-4,4'-diaminodiphenyl ether; 4,4'-bis (diphenylamino) quadriphenyl N, N, N-tri (p-tolyl) amine; 4- (di-p-tolylamino) -4 '-[4- (di-p-tolylamino) styryl] stilbene; 4-N, N-diphenylamino -(2-diphenylvinyl) benzene; 3-methoxy-4'-N, N-diphenylaminostilbenzene; N-phenylcarbazole, and also two described in US Pat. No. 5,061,569 Having a condensed aromatic ring of, for example, 4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (NPD), JP-A-4-308 4,4 ', 4 "-tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine in which three triphenylamine units described in Japanese Patent No. 88 are linked in a starburst type ( MTDATA) and the like.

  Furthermore, a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used. In addition, inorganic compounds such as p-type-Si and p-type-SiC can also be used as the hole injection material and the hole transport material.

  JP-A-11-251067, J. Org. Huang et. al. A so-called p-type hole transport material as described in a book (Applied Physics Letters 80 (2002), p. 139) can also be used. In the present invention, these materials are preferably used because a light-emitting element with higher efficiency can be obtained.

  The hole transport layer can be formed by thinning the hole transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method. it can. Although there is no restriction | limiting in particular about the film thickness of a positive hole transport layer, Usually, 5 nm-about 5 micrometers, Preferably it is 5 nm-200 nm. The hole transport layer may have a single layer structure composed of one or more of the above materials.

  Alternatively, a hole transport layer having a high p property doped with impurities can be used. Examples thereof include JP-A-4-297076, JP-A-2000-196140, 2001-102175, J. Pat. Appl. Phys. 95, 5773 (2004), and the like.

  In the present invention, it is preferable to use a hole transport layer having such a high p property because a device with lower power consumption can be produced.

《Electron transport layer》
The electron transport layer is made of a material having a function of transporting electrons, and in a broad sense, an electron injection layer and a hole blocking layer are also included in the electron transport layer. The electron transport layer can be provided as a single layer or a plurality of layers.

  Conventionally, in the case of a single electron transport layer and a plurality of layers, an electron transport material (also serving as a hole blocking material) used for an electron transport layer adjacent to the light emitting layer on the cathode side is injected from the cathode. As long as it has a function of transferring electrons to the light-emitting layer, any material can be selected and used from among conventionally known compounds. For example, nitro-substituted fluorene derivatives, diphenylquinone derivatives Thiopyrandioxide derivatives, carbodiimides, fluorenylidenemethane derivatives, anthraquinodimethane and anthrone derivatives, oxadiazole derivatives and the like. Furthermore, in the above oxadiazole derivative, a thiadiazole derivative in which the oxygen atom of the oxadiazole ring is substituted with a sulfur atom, and a quinoxaline derivative having a quinoxaline ring known as an electron withdrawing group can also be used as an electron transport material. Furthermore, a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used.

  Also, metal complexes of 8-quinolinol derivatives such as tris (8-quinolinol) aluminum (Alq), tris (5,7-dichloro-8-quinolinol) aluminum, tris (5,7-dibromo-8-quinolinol) aluminum, Tris (2-methyl-8-quinolinol) aluminum, tris (5-methyl-8-quinolinol) aluminum, bis (8-quinolinol) zinc (Znq), etc., and the central metals of these metal complexes are In, Mg, Cu , Ca, Sn, Ga, or Pb can also be used as an electron transport material. In addition, metal-free or metal phthalocyanine, or those having terminal ends substituted with an alkyl group or a sulfonic acid group can be preferably used as the electron transporting material. In addition, the distyrylpyrazine derivative exemplified as the material of the light emitting layer can also be used as an electron transport material, and an inorganic semiconductor such as n-type-Si, n-type-SiC, etc. as in the case of the hole injection layer and the hole transport layer Can also be used as an electron transporting material.

  The electron transport layer can be formed by thinning the electron transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method. Although there is no restriction | limiting in particular about the film thickness of an electron carrying layer, Usually, 5 nm-about 5 micrometers, Preferably it is 5 nm-200 nm. The electron transport layer may have a single layer structure composed of one or more of the above materials.

  In the inventions according to claims 7 and 8, an electron transport layer having a high n property doped with impurities is used. Examples thereof include JP-A-4-297076, JP-A-10-270172, JP-A-2000-196140, 2001-102175, J.A. Appl. Phys. 95, 5773 (2004), and the like.

  In the present invention, it is preferable to use an electron transport layer having such a high n property because an element with lower power consumption can be manufactured.

《Reactive organic compound》
In the present invention, an organic compound having a reactive group (reactive organic compound) may be used. There is no restriction | limiting in particular as a layer using a reactive organic compound, It can use for each layer.

  A reactive organic compound can be reacted on a substrate to form a network polymer of organic molecules. Generation | occurrence | production of a network polymer can suppress element deterioration by Tg (glass transition point) adjustment of a structure layer.

  It is also possible to change the emission wavelength of the organic EL element, suppress deterioration of the specific wavelength, etc. by adjusting the reaction accompanied by the cleavage or generation of the conjugated system of the molecule using the active radical in use. is there.

  On the other hand, on the manufacturing side, for example, in the case of the step of laminating by coating, it is preferable that the lower layer is not dissolved in the upper layer coating solution, and the upper layer can be applied by making the lower layer resin and degrading solvent solubility. Can do.

  Here, when the reactive organic compound of the present invention is reacted, in the present invention, the reactive organic compound is preferably irradiated with light while being heated after film formation. It is particularly preferable that the heating temperature T is within a range corresponding to the following formula with respect to Tg of the reactive organic compound.

Tg <T <Tg + 100 ° C.
An example of the reactive group which can be used for this invention is shown.

  Moreover, an example of a reactive organic compound is shown.

  Moreover, as the reactive organic compound of the present invention, it is particularly preferable to use the compound represented by the general formula (1). More preferably, the reactive organic compound represented by the general formula (1) is used as a hole transport material.

  An example of the compound represented by the general formula (1) is shown below.

"anode"
As the anode in the organic EL element, an electrode material made of a metal, an alloy, an electrically conductive compound, or a mixture thereof having a high work function (4 eV or more) is preferably used. Specific examples of such electrode materials include metals such as Au, and conductive transparent materials such as CuI, indium tin oxide (ITO), SnO ₂ , and ZnO. Alternatively, an amorphous material such as IDIXO (In ₂ O ₃ —ZnO) capable of forming a transparent conductive film may be used. For the anode, these electrode materials may be formed into a thin film by a method such as vapor deposition or sputtering, and a pattern having a desired shape may be formed by a photolithography method, or when pattern accuracy is not so high (about 100 μm or more) A pattern may be formed through a mask having a desired shape at the time of vapor deposition or sputtering of the electrode material. Or when using the substance which can be apply | coated like an organic electroconductivity compound, wet film-forming methods, such as a printing system and a coating system, can also be used. When light emission is extracted from the anode, it is desirable that the transmittance be greater than 10%, and the sheet resistance as the anode is preferably several hundred Ω / □ or less. Further, although the film thickness depends on the material, it is usually selected in the range of 10 nm to 1000 nm, preferably 10 nm to 200 nm.

"cathode"
On the other hand, as the cathode, a material having a low work function (4 eV or less) metal (referred to as an electron injecting metal), an alloy, an electrically conductive compound, and a mixture thereof as an electrode material is used. Specific examples of such electrode materials include sodium, sodium-potassium alloy, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, aluminum / aluminum oxide (Al ₂ O ₃₎ mixture, indium, a lithium / aluminum mixture, and rare earth metals. Among these, from the point of durability against electron injection and oxidation, etc., a mixture of an electron injecting metal and a second metal which is a stable metal having a larger work function than this, for example, a magnesium / silver mixture, Magnesium / aluminum mixtures, magnesium / indium mixtures, aluminum / aluminum oxide (Al ₂ O ₃ ) mixtures, lithium / aluminum mixtures, aluminum and the like are preferred. The cathode can be produced by forming a thin film of these electrode materials by a method such as vapor deposition or sputtering. The sheet resistance as a cathode is preferably several hundred Ω / □ or less, and the film thickness is usually selected in the range of 10 nm to 5 μm, preferably 50 nm to 200 nm. In order to transmit the emitted light, if either one of the anode or the cathode of the organic EL element is transparent or translucent, the light emission luminance is improved, which is convenient.

  Moreover, after producing the said metal by the film thickness of 1 nm-20 nm to a cathode, the transparent or semi-transparent cathode can be produced by producing the electroconductive transparent material quoted by description of the anode on it, By applying this, an element in which both the anode and the cathode are transmissive can be manufactured.

《Support substrate》
As a support substrate (hereinafter also referred to as a substrate, substrate, substrate, support, etc.) that can be used in the organic EL device of the present invention, there is no particular limitation on the type of glass, plastic, etc., and it is transparent. May be opaque. When extracting light from the support substrate side, the support substrate is preferably transparent. Examples of the transparent support substrate preferably used include glass, quartz, and a transparent resin film. A particularly preferable support substrate is a resin film capable of giving flexibility to the organic EL element.

  Examples of the resin film include polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyethylene, polypropylene, cellophane, cellulose diacetate, cellulose triacetate, cellulose acetate butyrate, cellulose acetate propionate (CAP), Cellulose esters such as cellulose acetate phthalate (TAC) and cellulose nitrate or derivatives thereof, polyvinylidene chloride, polyvinyl alcohol, polyethylene vinyl alcohol, syndiotactic polystyrene, polycarbonate, norbornene resin, polymethylpentene, polyether ketone, polyimide , Polyethersulfone (PES), polyphenylene sulfide, polysulfones Cycloolefin resins such as polyetherimide, polyetherketoneimide, polyamide, fluororesin, nylon, polymethylmethacrylate, acrylic or polyarylate, Arton (trade name, manufactured by JSR) or Appel (trade name, manufactured by Mitsui Chemicals) Can be mentioned.

On the surface of the resin film, an inorganic film, an organic film, or a hybrid film of both may be formed. Water vapor permeability (25 ± 0.5 ° C.) measured by a method according to JIS K 7129-1992. , Relative humidity (90 ± 2)% RH) is preferably 0.01 g / (m ² · 24 h) or less, and further, oxygen measured by a method according to JIS K 7126-1987. A high barrier film having a permeability of 10 ⁻³ ml / (m ² · 24 h · MPa) or less and a water vapor permeability of 10 ⁻⁵ g / (m ² · 24 h) or less is preferable.

  As a material for forming the barrier film, any material may be used as long as it has a function of suppressing entry of elements that cause deterioration of elements such as moisture and oxygen. For example, silicon oxide, silicon dioxide, silicon nitride, or the like can be used. Further, in order to improve the brittleness of the film, it is more preferable to have a laminated structure of these inorganic layers and organic material layers. Although there is no restriction | limiting in particular about the lamination | stacking order of an inorganic layer and an organic layer, It is preferable to laminate | stack both alternately several times.

  The method for forming the barrier film is not particularly limited. For example, vacuum deposition, sputtering, reactive sputtering, molecular beam epitaxy, cluster ion beam, ion plating, plasma polymerization, atmospheric pressure plasma polymerization A plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used, but an atmospheric pressure plasma polymerization method as described in JP-A-2004-68143 is particularly preferable.

  Examples of the opaque support substrate include metal plates such as aluminum and stainless steel, films, opaque resin substrates, and ceramic substrates.

  The external extraction efficiency at room temperature of light emission of the organic EL device of the present invention is preferably 1% or more, more preferably 5% or more. Here, the external extraction quantum efficiency (%) = the number of photons emitted to the outside of the organic EL element / the number of electrons sent to the organic EL element × 100.

  In addition, a hue improvement filter such as a color filter may be used in combination, or a color conversion filter that converts the emission color from the organic EL element into multiple colors using a phosphor. In the case of using a color conversion filter, the λmax of light emission of the organic EL element is preferably 480 nm or less.

<Sealing>
As a sealing means used for this invention, the method of adhere | attaching a sealing member, an electrode, and a support substrate with an adhesive agent can be mentioned, for example.

  As a sealing member, it should just be arrange | positioned so that the display area | region of an organic EL element may be covered, and concave plate shape or flat plate shape may be sufficient. Further, transparency and electrical insulation are not particularly limited.

  Specific examples include a glass plate, a polymer plate / film, and a metal plate / film. Examples of the glass plate include soda-lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, and quartz. Examples of the polymer plate include polycarbonate, acrylic, polyethylene terephthalate, polyether sulfide, and polysulfone. Examples of the metal plate include those made of one or more metals or alloys selected from the group consisting of stainless steel, iron, copper, aluminum, magnesium, nickel, zinc, chromium, titanium, molybdenum, silicon, germanium, and tantalum.

In the present invention, a polymer film and a metal film can be preferably used because the element can be thinned. Furthermore, the polymer film has a oxygen permeability measured by a method according to JIS K 7126-1987 of 1 × 10 ⁻³ ml / (m ² · 24 h · MPa) or less, and a method according to JIS K 7129-1992. It is preferable that the water vapor permeability (25 ± 0.5 ° C., relative humidity (90 ± 2)% RH) measured in (1) is 1 × 10 ⁻³ g / (m ² · 24 h) or less.

  For processing the sealing member into a concave shape, sandblasting, chemical etching, or the like is used.

  Specific examples of the adhesive include photocuring and thermosetting adhesives having reactive vinyl groups such as acrylic acid oligomers and methacrylic acid oligomers, and moisture curing adhesives such as 2-cyanoacrylates. be able to. Moreover, heat | fever and chemical curing types (two-component mixing), such as an epoxy type, can be mentioned. Moreover, hot-melt type polyamide, polyester, and polyolefin can be mentioned. Moreover, a cationic curing type ultraviolet curing epoxy resin adhesive can be mentioned.

  In addition, since an organic EL element may deteriorate by heat processing, what can be adhesive-hardened from room temperature to 80 degreeC is preferable. A desiccant may be dispersed in the adhesive. Application | coating of the adhesive agent to a sealing part may use commercially available dispenser, and may print like screen printing.

  In addition, it is also preferable that the electrode and the organic layer are coated on the outside of the electrode facing the support substrate with the organic layer interposed therebetween, and an inorganic or organic layer is formed in contact with the support substrate to form a sealing film. . In this case, the material for forming the film may be any material that has a function of suppressing intrusion of elements that cause deterioration of elements such as moisture and oxygen. For example, silicon oxide, silicon dioxide, silicon nitride, or the like may be used. it can. Further, in order to improve the brittleness of the film, it is preferable to have a laminated structure of these inorganic layers and layers made of organic materials. The method for forming these films is not particularly limited. For example, vacuum deposition, sputtering, reactive sputtering, molecular beam epitaxy, cluster ion beam, ion plating, plasma polymerization, atmospheric pressure plasma A combination method, a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used.

  In the gap between the sealing member and the display area of the organic EL element, an inert gas such as nitrogen or argon, or an inert liquid such as fluorinated hydrocarbon or silicon oil can be injected in the gas phase and liquid phase. preferable. A vacuum is also possible. Moreover, a hygroscopic compound can also be enclosed inside.

  Examples of the hygroscopic compound include metal oxides (for example, sodium oxide, potassium oxide, calcium oxide, barium oxide, magnesium oxide, aluminum oxide) and sulfates (for example, sodium sulfate, calcium sulfate, magnesium sulfate, cobalt sulfate). Etc.), metal halides (eg calcium chloride, magnesium chloride, cesium fluoride, tantalum fluoride, cerium bromide, magnesium bromide, barium iodide, magnesium iodide etc.), perchloric acids (eg perchloric acid) Barium, magnesium perchlorate, etc.), and anhydrous salts are preferably used in sulfates, metal halides and perchloric acids.

《Protective film, protective plate》
In order to increase the mechanical strength of the element, a protective film or a protective plate may be provided on the outer side of the sealing film on the side facing the support substrate with the organic layer interposed therebetween or on the sealing film. In particular, when the sealing is performed by the sealing film, the mechanical strength is not necessarily high, and thus it is preferable to provide such a protective film and a protective plate. As a material that can be used for this, the same glass plate, polymer plate / film, metal plate / film, and the like used for the sealing can be used, but the polymer film is light and thin. Is preferably used.

《Light extraction》
The organic EL element emits light inside a layer having a refractive index higher than that of air (refractive index is about 1.7 to 2.1) and can extract only about 15% to 20% of the light generated in the light emitting layer. It is generally said. This is because light incident on the interface (interface between the transparent substrate and air) at an angle θ greater than the critical angle causes total reflection and cannot be taken out of the device, or between the transparent electrode or light emitting layer and the transparent substrate. This is because the light is totally reflected between the light and the light is guided through the transparent electrode or the light emitting layer, and as a result, the light escapes in the direction of the element side surface.

  As a method of improving the light extraction efficiency, for example, a method of forming irregularities on the surface of the transparent substrate and preventing total reflection at the transparent substrate and the air interface (US Pat. No. 4,774,435), A method of improving efficiency by providing a light collecting property to a substrate (Japanese Patent Laid-Open No. 63-314795), a method of forming a reflective surface on a side surface of an element (Japanese Patent Laid-Open No. 1-220394), and light emission from a substrate A method of forming an antireflection film by introducing a flat layer having an intermediate refractive index between the bodies (Japanese Patent Laid-Open No. 62-172691), a flat having a lower refractive index between the substrate and the light emitter than the substrate A method of introducing a layer (Japanese Patent Laid-Open No. 2001-202827), a method of forming a diffraction grating between any one of a substrate, a transparent electrode layer and a light emitting layer (including between the substrate and the outside) (Japanese Patent Laid-Open No. 11-283951) Gazette).

  In the present invention, these methods can be used in combination with the organic EL device of the present invention. However, a method of introducing a flat layer having a lower refractive index than the substrate between the substrate and the light emitter, or a substrate, transparent A method of forming a diffraction grating between any layers of the electrode layer and the light emitting layer (including between the substrate and the outside) can be suitably used.

  In the present invention, by combining these means, it is possible to obtain an element having higher luminance or durability.

  When a medium having a low refractive index is formed between the transparent electrode and the transparent substrate with a thickness longer than the wavelength of light, the light extracted from the transparent electrode has a higher extraction efficiency to the outside as the refractive index of the medium is lower.

  Examples of the low refractive index layer include aerogel, porous silica, magnesium fluoride, and a fluorine-based polymer. Since the refractive index of the transparent substrate is generally about 1.5 to 1.7, the low refractive index layer preferably has a refractive index of about 1.5 or less. Further, it is preferably 1.35 or less.

  The thickness of the low refractive index medium is preferably at least twice the wavelength in the medium. This is because the effect of the low refractive index layer is diminished when the thickness of the low refractive index medium is about the wavelength of light and the electromagnetic wave that has exuded by evanescent enters the substrate.

  The method of introducing a diffraction grating into an interface or any medium that causes total reflection is characterized by a high effect of improving light extraction efficiency. This method uses the property that the diffraction grating can change the direction of light to a specific direction different from refraction by so-called Bragg diffraction such as first-order diffraction and second-order diffraction. Light that cannot be emitted due to total internal reflection between layers is diffracted by introducing a diffraction grating in any layer or medium (in a transparent substrate or transparent electrode), and the light is removed. I want to take it out.

  The introduced diffraction grating desirably has a two-dimensional periodic refractive index. This is because light emitted from the light-emitting layer is randomly generated in all directions, so in a general one-dimensional diffraction grating having a periodic refractive index distribution only in a certain direction, only light traveling in a specific direction is diffracted. Therefore, the light extraction efficiency does not increase so much. However, by making the refractive index distribution a two-dimensional distribution, light traveling in all directions is diffracted, and light extraction efficiency is increased.

  As described above, the position where the diffraction grating is introduced may be in any of the layers or in the medium (in the transparent substrate or in the transparent electrode), but is preferably in the vicinity of the organic light emitting layer where light is generated.

  At this time, the period of the diffraction grating is preferably about 1/2 to 3 times the wavelength of light in the medium.

  The arrangement of the diffraction grating is preferably two-dimensionally repeated, such as a square lattice, a triangular lattice, or a honeycomb lattice.

<Condenser sheet>
The organic EL device of the present invention is processed on the light extraction side of the substrate so as to provide, for example, a microlens array structure, or combined with a so-called condensing sheet, for example, with respect to a specific direction, for example, the light emitting surface By condensing in the front direction, the luminance in a specific direction can be increased.

  As an example of the microlens array, quadrangular pyramids having a side of 30 μm and an apex angle of 90 degrees are two-dimensionally arranged on the light extraction side of the substrate. One side is preferably 10 μm to 100 μm. If it becomes smaller than this, the effect of diffraction will generate | occur | produce and color, and if too large, thickness will become thick and is not preferable.

  As the condensing sheet, for example, a sheet that is put into practical use in an LED backlight of a liquid crystal display device can be used. As such a sheet, for example, a brightness enhancement film (BEF) manufactured by Sumitomo 3M Limited can be used. As the shape of the prism sheet, for example, the base material may be formed by forming a △ -shaped stripe having a vertex angle of 90 degrees and a pitch of 50 μm, or the vertex angle is rounded and the pitch is changed randomly. Other shapes may be used.

  Moreover, in order to control the light emission angle from a light emitting element, you may use together a light diffusing plate and a film with a condensing sheet. For example, a diffusion film (light-up) manufactured by Kimoto Co., Ltd. can be used.

<< Method for producing organic EL element >>
As an example of the method for producing the organic EL device of the present invention, a method for producing an organic EL device comprising an anode / hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer / cathode will be described.

  First, a desired electrode material, for example, a thin film made of an anode material is formed on a suitable substrate so as to have a film thickness of 1 μm or less, preferably 10 nm to 200 nm, to form an anode.

  Next, an organic compound thin film of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and a hole blocking layer, which are organic EL element materials, is formed thereon.

  As described above, the light emitting layer of the organic EL device of the present invention is formed by a wet process. As a method for forming an organic layer other than the light emitting layer, there are a vapor deposition method, a wet process (spin coating method, casting method, ink jet method, spray method, printing method), etc., but a homogeneous film can be easily obtained and a pinhole is used. In the present invention, a part or all of the organic layer is preferably formed by a coating method such as a spin coating method, an ink jet method, a spray method, or a printing method.

  Examples of the liquid medium for dissolving or dispersing the organic EL material according to the present invention include ketones such as methyl ethyl ketone and cyclohexanone, fatty acid esters such as ethyl acetate, halogenated hydrocarbons such as dichlorobenzene, toluene, xylene, and mesitylene. Aromatic hydrocarbons such as cyclohexylbenzene, aliphatic hydrocarbons such as cyclohexane, decalin, and dodecane, and organic solvents such as DMF and DMSO can be used. Moreover, as a dispersion method, it can disperse | distribute by dispersion methods, such as an ultrasonic wave, high shear force dispersion | distribution, and media dispersion | distribution.

  After these layers are formed, a thin film made of a cathode material is formed thereon by 1 μm or less, preferably by a method such as vapor deposition or sputtering so that the film thickness is in the range of 50 nm to 200 nm. By providing, a desired organic EL element can be obtained.

  Further, it is possible to reverse the production order, and to produce the cathode, the electron injection layer, the electron transport layer, the light emitting layer, the hole transport layer, the hole injection layer, and the anode in this order. When a DC voltage is applied to the multicolor display device thus obtained, light emission can be observed by applying a voltage of about 2 to 40 V with the positive polarity of the anode and the negative polarity of the cathode. An alternating voltage may be applied. The alternating current waveform to be applied may be arbitrary.

  EXAMPLES Hereinafter, the present invention will be specifically described with reference to examples, but the present invention is not limited thereto. In addition, although the display of "part" or "%" is used in an Example, unless otherwise indicated, "part by mass" or "mass%" is represented.

Example 1
<< Production of organic EL element >>
[Production of Organic EL Element 101]
After patterning a substrate (NH technoglass NA45) formed by depositing 100 nm of ITO (indium tin oxide) on a 100 mm × 100 mm × 1.1 mm glass substrate as an anode, a substrate provided with this ITO transparent electrode was formed. Ultrasonic cleaning with isopropyl alcohol, drying with dry nitrogen gas, and UV ozone cleaning were performed for 5 minutes. A solution obtained by diluting poly (3,4-ethylenedioxythiophene) -polystyrene sulfonate (PEDOT / PSS, Bayer, Baytron P Al 4083) to 70% with pure water on this substrate was spin-coated at 3000 rpm for 30 seconds. After forming into a film by the method, it was dried at 200 ° C. for 1 hour to provide a hole injection layer having a thickness of 30 nm.

This substrate was transferred to a glove box under a nitrogen atmosphere in accordance with JIS B 9920, the measured cleanliness was class 100, the dew point temperature was −80 ° C. or lower, and the oxygen concentration was 0.8 ppm. A coating solution for a hole transport layer was prepared as follows in a glove box, and applied with a spin coater under conditions of 1500 rpm and 30 seconds. This substrate was heated at 150 ° C. for 10 seconds, and irradiated with 30 mW / cm ² of ultraviolet light for 20 seconds using a high pressure mercury lamp (OHD-110M-ST, manufactured by Oak Manufacturing Co., Ltd.). Furthermore, it heated at 120 degreeC for 30 minute (s), and provided the positive hole transport layer. The film thickness was 20 nm when it apply | coated and measured on the conditions with the board | substrate prepared separately.

(Coating liquid for hole transport layer)
Toluene 100g
HT-C 0.5g
Subsequently, the light emitting layer coating liquid was prepared as follows, and it apply | coated on 2000 rpm and the conditions for 30 seconds with the spin coater. Furthermore, it heated at 180 degreeC for 30 minutes, and provided the light emitting layer. When the coating was performed under the same conditions on a separately prepared substrate and measured, the film thickness was 40 nm.

(Light emitting layer coating solution)
Toluene 100g
HA 1g
Ir-A 0.11 g
Subsequently, the coating liquid for electron carrying layers was prepared as follows, and it apply | coated on the conditions of 1500 rpm and 30 seconds with a spin coater. Furthermore, it heated at 120 degreeC for 30 minutes, and provided the electron carrying layer. The film thickness was 30 nm when it apply | coated and measured on the conditions with the board | substrate prepared separately.

(Coating liquid for electron transport layer)
2,2,3,3-tetrafluoro-1-propanol 100 g
ET-A 0.75g
Next, the substrate provided up to the electron transport layer was moved to a vapor deposition machine without being exposed to the atmosphere, and the pressure was reduced to 4 × 10 ⁻⁴ Pa. Note that cesium fluoride and aluminum were each placed in a tantalum resistance heating boat and attached to a vapor deposition machine.

  First, a resistance heating boat containing cesium fluoride was energized and heated to provide a 3 nm electron injection layer made of cesium fluoride on the substrate. Subsequently, a resistance heating boat containing aluminum was energized and heated, and a cathode having a film thickness of 100 nm made of aluminum was provided at a deposition rate of 1 to 2 nm / second.

  The substrate provided up to the cathode is moved to a glove box with a cleanness measured in accordance with JIS B9920 of class 100, a dew point temperature of −80 ° C. or lower, and an oxygen concentration of 0.8 ppm without being exposed to the atmosphere. The element 101 was obtained by sealing with a glass sealing can attached with barium oxide as a water-absorbing agent. In addition, barium oxide which is a water-absorbing agent is a high-purity barium oxide powder manufactured by Aldrich, and is attached to a glass sealing can with a fluorine-based semipermeable membrane (Microtex S-NTF8031Q made by Nitto Denko) with an adhesive. Were prepared and used in advance. An ultraviolet curable adhesive was used for bonding the sealing can and the organic EL element, and both were bonded to each other by irradiating ultraviolet rays to produce a sealing element.

[Production of Organic EL Elements 102 to 113]
In the organic EL element 101, the organic EL device was similarly manufactured except that the material for the hole injection layer, the reactive organic compound for the hole transport layer, and the heating conditions for the reaction after the application of the hole transport layer were changed as shown in Table 1. Elements 102 to 113 were produced.

<< Evaluation of organic EL elements >>
[Surface roughness before and after reaction of reactive organic compound layer]
In the production of the organic EL elements 101 to 113, only a reactive organic compound layer was formed on a separately prepared glass substrate so as to have a thickness of 20 nm, and UV irradiation was performed while heating the substrate under the conditions described in Table 1. The reactive organic compound layer was reacted. About the obtained film | membrane, the surface shape was measured before and behind reaction. The surface shape is measured using a scanning probe microscope SPI3800N DFM (manufactured by SII Nano Technology Co., Ltd.) under the conditions of cantilever SI-DF20, measurement area 50 μm × 50 μm, surface average roughness (Ra) and maximum unevenness. Each difference (Rt) was measured.

[Curability of reactive organic compound layer]
In the production of the organic EL elements 101 to 113, only a reactive organic compound layer is formed on a separately prepared quartz substrate so as to have a thickness of 20 nm, and UV irradiation is performed while heating the substrate under the conditions described in Table 1. The reactive organic compound layer was reacted. The UV absorption spectrum of this substrate was measured, and the absorbance (A ₀ ) at 350 nm was measured. Toluene was dropped on the same substrate on a spin coater and rotated at 1000 rpm and dried. After performing this operation twice for each sample, the UV absorption spectrum was measured, and the absorbance (A ₁ ) at 350 nm was measured. From the obtained results, the curability of the reactive organic compound was judged as follows.

○: A ₁ / A ₀ ≧ 0.95
Δ: 0.95> A ₁ / A ₀ ≧ 0.90
×: 0.90> A ₁ / A ₀
The obtained results are shown in Table 1.

[External extraction quantum efficiency]
With respect to the produced organic EL element, the external extraction quantum efficiency (%) when a ^2.5 mA / cm ² constant current was passed was measured. For the measurement, a spectral radiance meter CS-1000 (manufactured by Konica Minolta Sensing) was used. The obtained results are shown in Table 2 as relative values when the measured value of the organic EL element 101 is 100.

[Luminescence life]
The manufactured organic EL element was continuously driven by applying a current that would give a front luminance of 1000 cd / m ² . The time required for the front luminance to reach the initial half value (500 cd / m ² ) is obtained, and the external extraction quantum efficiency of the organic EL elements 102 to 113 is expressed as a relative value with the measured value of the organic EL element 101 as 100. did.

[Light emitting surface uniformity]
Using the direct current power supply (DC stabilized power supply PA13-B manufactured by Techio Co., Ltd.) for the produced organic EL element, the device was caused to emit light, and the microscope (MS-804 manufactured by Moritex Co., Ltd., lens A-1468) was used. The light emitting surface was observed and the number of white spots and black spots on all the light emitting surfaces (4 mm square) was measured.

  The obtained results are shown in Table 2. The compounds used are shown below.

  It can be seen that in the device of the present invention, the external extraction quantum efficiency and the emission lifetime are improved, and the white spot and black spot abnormalities on the light emitting surface are also reduced.

Example 2
In Example 1, white organic EL elements 201 to 213 were similarly manufactured as shown in Table 3 except that the composition of the light emitting layer was changed to the following.

(Light emitting layer coating solution)
Toluene 100g
HA 1g
Ir-A 0.11 g
Ir (ppy) ₃ 0.002 g
Ir (piq) ₃ 0.002 g
The same evaluation as in Example 1 was performed, and the obtained results are shown in Tables 3 and 4.

  Also in the white organic EL element of Example 2, it can be seen that the external extraction quantum efficiency and the light emission lifetime are improved in the element of the present invention, and the abnormality of the white spot and black spot on the light emitting surface is also reduced.

Example 3
In Example 1, the entire surface of a plastic film made of polyethylene naphthalate (manufactured by Teijin & Deyupon Co., Ltd.) as the substrate to be used can be continuously applied by the method described in JP-A-2004-68143 using an atmospheric pressure plasma discharge treatment apparatus. An inorganic gas barrier film made of SiO _x is formed on a flexible film, and has a gas barrier flexibility with an oxygen permeability of 0.01 ml / m ² / day or less and a water vapor permeability of 0.01 g / m ² / day or less. When the film was used, it was confirmed that the quantum efficiency and the light emission lifetime were improved in the configuration of the present invention as in Example 1, and the white spots and black spots on the light emitting surface were also reduced.

Claims (6)

In an organic electroluminescence device having at least an anode, a cathode, and a light emitting layer and a hole transport layer sandwiched between the anode and cathode on a substrate, at least one layer contains a reactive organic compound and is reacted after film formation An organic electroluminescence device, wherein the surface roughness Ra1 and surface unevenness difference Rt1 before reaction and the surface roughness Ra2 and surface unevenness difference Rt2 after reaction are in the following relationship:
Ra2-Ra1 <0.3nm
Rt2-Rt1 <5.0nm 2. The organic electroluminescence device according to claim 1, wherein the reactive organic compound is a compound having any of the following partial structures.

The organic electroluminescence device according to claim 1, wherein the reactive organic compound is a hole transport material represented by the following general formula (1).

_Wherein, Ar 1 to Ar ₅ represents a substituted or unsubstituted phenyl group or a naphthyl group. At least one of Ar ₁ to Ar ₅ comprises a substituent comprising the following partial structure. n represents an integer of 1 or 2. ]

The organic electroluminescence device manufacturing method according to any one of claims 1 to 3, wherein the means for reacting the reactive organic compound is irradiation with ultraviolet rays while heating. Manufacturing method of electroluminescent element. The method for producing an organic electroluminescence element according to claim 4, wherein the heating temperature T is in the following relationship with respect to the glass transition temperature Tg of the reactive organic compound.
Tg <T <Tg + 100 ° C. 6. The method for manufacturing an organic electroluminescent element according to claim 4, wherein the layer containing the reactive organic compound is formed by a wet process.