JP2010045228A - Ohmic junction forming method for surface of conductive element material made of c12a7 electride - Google Patents
Ohmic junction forming method for surface of conductive element material made of c12a7 electride Download PDFInfo
- Publication number
- JP2010045228A JP2010045228A JP2008208753A JP2008208753A JP2010045228A JP 2010045228 A JP2010045228 A JP 2010045228A JP 2008208753 A JP2008208753 A JP 2008208753A JP 2008208753 A JP2008208753 A JP 2008208753A JP 2010045228 A JP2010045228 A JP 2010045228A
- Authority
- JP
- Japan
- Prior art keywords
- electride
- phosphoric acid
- element material
- metal
- ohmic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000000463 material Substances 0.000 title claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 238000000151 deposition Methods 0.000 claims abstract description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 90
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 45
- 238000010306 acid treatment Methods 0.000 claims description 20
- 239000007864 aqueous solution Substances 0.000 claims description 20
- 230000006866 deterioration Effects 0.000 abstract description 2
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 description 15
- 239000010931 gold Substances 0.000 description 11
- 230000004048 modification Effects 0.000 description 11
- 238000012986 modification Methods 0.000 description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 10
- 239000010410 layer Substances 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910017119 AlPO Inorganic materials 0.000 description 3
- ILRRQNADMUWWFW-UHFFFAOYSA-K aluminium phosphate Chemical compound O1[Al]2OP1(=O)O2 ILRRQNADMUWWFW-UHFFFAOYSA-K 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- -1 oxygen ions Chemical class 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- UEZVMMHDMIWARA-UHFFFAOYSA-N Metaphosphoric acid Chemical compound OP(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000004677 hydrates Chemical class 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000006011 modification reaction Methods 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical group [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 102220040233 rs79219465 Human genes 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
本発明は、１２ＣａＯ・７Ａｌ２Ｏ３（以下、「Ｃ１２Ａ７」と記す）エレクトライドか
らなる導電性素子材料表面と蒸着金属とのオーミック接合の形成方法に関するものである
。
The present invention relates to a method for forming an ohmic junction between a surface of a conductive element made of 12CaO · 7Al 2 O 3 (hereinafter referred to as “C12A7”) electride and a deposited metal.
Ｃ１２Ａ７化合物は、結晶中のケージに包接された酸素イオン（「自由酸素イオン」と呼
ぶ）を還元処理することにより電子に置換することができる。該電子は、ケージ間を移動
するために、還元処理によりＣ１２Ａ７に電気伝導性を賦与することができる。電子含有
量が約１×１０２１ｃｍ−３を超えるＣ１２Ａ７では、その電気抵抗は温度の上昇ととも
に減少する金属型電気伝導となる（非特許文献１）。本明細書において、包接された酸素
イオンを、電子で部分的（１×１０１９個電子ｃｍ−３超２．３×１０２１個電子ｃｍ−
３未満）又は完全（２．３×１０２１個電子ｃｍ−３）に置換した化合物をＣ１２Ａ７エ
レクトライド（Ｃ１２Ａ７：ｅ−）と定義する。
The C12A7 compound can be replaced with electrons by reducing oxygen ions (referred to as “free oxygen ions”) included in the cage in the crystal. The electrons can impart electrical conductivity to C12A7 by reduction treatment in order to move between cages. In C12A7 in which the electron content exceeds about 1 × 10 21 cm −3 , the electric resistance becomes metal-type electric conduction that decreases with increasing temperature (Non-Patent Document 1). In this specification, the oxygen ions included are partially converted into electrons (over 1 × 10 19 electrons cm −3 and 2.3 × 10 21 electrons cm −
A compound substituted with less than 3 ) or completely (2.3 × 10 21 electrons cm −3 ) is defined as C12A7 electride (C12A7: e − ).
本発明者らは、単結晶や微粉末の静水圧プレス成形体をアルカリ金属又はアルカリ土類金
属蒸気中で７００℃程度に保持する等の方法でＣ１２Ａ７に電気伝導性を賦与する方法と
該方法で得られた電子放出材料の発明について特許出願した（特許文献１）。また、原料
を溶融した後ガラス相状態の形成温度まで急冷する方法で電気伝導性Ｃ１２Ａ７結晶を製
造する方法の発明について特許出願した（特許文献２）。また、原料物質を溶融し、酸素
分圧１０Ｐａ以下の低酸素分圧の雰囲気中に保持した後、冷却凝固して導電性マイエナイ
ト型化合物を製造する方法の発明について特許出願した（特許文献３）。さらに、チタン
金属蒸気中でＣ１２Ａ７化合物を処理して室温での電気伝導度が５×１０２Ｓ／ｃｍを超
えるＣ１２Ａ７エレクトライドを製造する方法と該方法で得られた電子放出材料の発明に
ついて特許出願した（特許文献４）。
The present inventors provide a method for imparting electrical conductivity to C12A7 by a method such as holding a hydrostatic press-molded body of single crystal or fine powder in an alkali metal or alkaline earth metal vapor at about 700 ° C. and the method. A patent application was filed for the invention of the electron-emitting material obtained in (Patent Document 1). In addition, a patent application was filed for an invention of a method for producing an electrically conductive C12A7 crystal by a method in which a raw material is melted and then rapidly cooled to a glass phase state forming temperature (Patent Document 2). Also, a patent application was filed for an invention of a method for producing a conductive mayenite type compound by melting a raw material and holding it in an atmosphere having a low oxygen partial pressure of 10 Pa or less and then cooling and solidifying it (Patent Document 3). . Furthermore, the invention relates to a method for producing a C12A7 electride having an electrical conductivity at room temperature exceeding 5 × 10 2 S / cm by treating a C12A7 compound in titanium metal vapor, and an invention of an electron emission material obtained by the method. Applied (Patent Document 4).
Ｃ１２Ａ７エレクトライドは、常温常圧で安定な物質であり、２．４ｅＶという極めて小
さい仕事関数もつことから、ＦＥＤの冷電子放出源（非特許文献２）、ＰＤＰの２次電子
放出源、有機ＥＬ素子のための電子注入電極（非特許文献３）、熱電子発電素子（特許文
献５、６）等としての応用が期待されている。
C12A7 electride is a stable substance at normal temperature and pressure, and has a very small work function of 2.4 eV. Therefore, a cold electron emission source of FED (Non-patent Document 2), a secondary electron emission source of PDP, and an organic EL Application as an electron injection electrode (Non-patent Document 3) for a device, a thermionic power generation device (Patent Documents 5 and 6) and the like is expected.
これらの素子材料では、通常、その表面に真空蒸着により金属層を蒸着させて電極を形成
している。しかし、Ｃ１２Ａ７エレクトライドからなる素子材料表面に対向する金属電極
を蒸着させ、該素子材料と電極間に電圧を印加した場合には、１０Ω・ｃｍ2以上の高い
接触抵抗が観測されるのみならず、そこを流れる電流の増加は印加した電圧の大きさに対
して非線形となる。すなわち、金属型伝導を示すＣ１２Ａ７エレクトライドを導電性素子
材料とする場合に、オーミック電極を作成するのが困難であった（以下、オーミック電極
が作成可能な表面を「オーミック表面」と呼ぶ。）。金属状態のＣ１２Ａ７エレクトライ
ドと金属との単純な界面（金属−金属接合）は、理論的には、オーミック接触になるはず
である。オーミック表面が得られない原因は、Ｃ１２Ａ７エレクトライド表面に電気絶縁
層が存在するためと考えられる（非特許文献４）。
In these element materials, a metal layer is usually deposited on the surface by vacuum deposition to form an electrode. However, when a metal electrode facing the element material surface made of C12A7 electride is vapor-deposited and a voltage is applied between the element material and the electrode, not only a high contact resistance of 10 Ω · cm 2 or more is observed. The increase in current flowing therethrough is non-linear with respect to the applied voltage. That is, when C12A7 electride showing metal-type conduction is used as the conductive element material, it is difficult to create an ohmic electrode (hereinafter, the surface on which the ohmic electrode can be created is referred to as “ohmic surface”). . A simple interface between a C12A7 electride in a metal state and a metal (metal-metal junction) should theoretically be an ohmic contact. The reason why the ohmic surface cannot be obtained is thought to be because an electrical insulating layer is present on the C12A7 electride surface (Non-patent Document 4).
Ｃ１２Ａ７エレクトライド層にオーミック表面電極を実現するために、表面を活性化する
手段としては、超高真空中で６００〜９００℃に加熱する方法、オゾン雰囲気中での紫外
線照射方法、アルゴンプラズマ照射方法などの物理的方法が考えられるが、大気中で長期
にオーミック表面を維持するのは困難である。
In order to realize an ohmic surface electrode in the C12A7 electride layer, as a means for activating the surface, a method of heating to 600 to 900 ° C. in an ultrahigh vacuum, an ultraviolet irradiation method in an ozone atmosphere, an argon plasma irradiation method However, it is difficult to maintain an ohmic surface for a long time in the atmosphere.
冷電子放出源や有機ＥＬ等の素子では、素子の動作に電流の注入が必要であり、素子材料
の界面に高抵抗の非オーミック接触が存在する場合、動作電圧の増大をもたらし、結果と
して、素子の低寿命化、消費電力の増大につながる。また、素子を長期間大気中で使用中
に特に、大気中の水分の影響により界面が劣化し、接触抵抗が増大することもある。それ
故、これらの素子へＣ１２Ａ７エレクトライドを応用するためには大気中でも界面が劣化
することが少ない、表面改質されたオーミック表面を形成することが課題になっている。
In an element such as a cold electron emission source or an organic EL, current injection is required for the operation of the element, and when a high resistance non-ohmic contact is present at the interface of the element material, the operation voltage is increased. This leads to a reduction in device life and an increase in power consumption. Further, when the device is used in the atmosphere for a long time, the interface may be deteriorated due to the influence of moisture in the atmosphere, and the contact resistance may be increased. Therefore, in order to apply C12A7 electride to these elements, it has been a problem to form a surface-modified ohmic surface that hardly deteriorates in the air even in the atmosphere.
そこで、発明者らは、鋭意研究の結果、第１に、リン酸水溶液にＣ１２Ａ７エレクトライ
ドを浸漬して表面改質処理する（以下、「リン酸処理」と呼ぶ）と、低抵抗のオーミック
表面が得られることを見いだした。リン酸処理後のＣ１２Ａ７エレクトライド表面に金（
Ａｕ）電極を蒸着すると、０.２Ω・ｃｍ2以下の低い接触抵抗を示すオーミック接触が得
られた。これは、リン酸処理により、Ｃ１２Ａ７エレクトライド表面の高抵抗層が取り除
かれ、本来の電気伝導性Ｃ１２Ａ７エレクトライド表面と金属の直接的な接合が得られた
ためである。接触抵抗の低下は金電極を他の金属、例えば、白金、Ｉｎ−Ｇａ合金に代え
ても同様に見られた。
Therefore, as a result of diligent research, the inventors firstly applied a surface modification treatment by immersing C12A7 electride in a phosphoric acid aqueous solution (hereinafter referred to as “phosphoric acid treatment”), and thereby a low-resistance ohmic surface. I found out that Gold (on the surface of C12A7 electride after phosphoric acid treatment
When the Au) electrode was deposited, an ohmic contact showing a low contact resistance of 0.2 Ω · cm 2 or less was obtained. This is because the high resistance layer on the surface of the C12A7 electride was removed by the phosphoric acid treatment, and direct bonding between the original electrically conductive C12A7 electride surface and the metal was obtained. The decrease in contact resistance was similarly observed even when the gold electrode was replaced with another metal such as platinum or an In—Ga alloy.
第２に、リン酸処理後の表面は単に金属電極との接触抵抗が低くなるのみならず、耐水性
を有するように表面改質され、リン酸処理後のＣ１２Ａ７エレクトライドは水に不溶とな
ることを見いだした。これは、セメント原料のＣ１２Ａ７が、水に容易に水和・溶解する
のとは対照的である。この表面改質は、リン酸処理により、Ｃ１２Ａ７エレクトライド表
面の高抵抗層が除去されるだけでなく、該表面がリン酸イオン(PO4 3-)によって化学修飾
され、空気中の酸素や水分との反応が抑制されると考えられる。このような表面改質反応
は、前述の物理的活性化方法では生じない反応である。
Second, the surface after the phosphoric acid treatment is not only reduced in contact resistance with the metal electrode, but also surface-modified so as to have water resistance, and the C12A7 electride after the phosphoric acid treatment becomes insoluble in water. I found out. This is in contrast to the cement raw material C12A7, which easily hydrates and dissolves in water. In this surface modification, not only the high resistance layer on the surface of the C12A7 electride is removed by phosphoric acid treatment, but the surface is chemically modified with phosphate ions (PO 4 3− ), and oxygen and moisture in the air It is thought that the reaction with is suppressed. Such a surface modification reaction is a reaction that does not occur in the above-described physical activation method.
リン酸自体は電子伝導性を持たないが、リン酸基による修飾は該表面のごく薄い領域に限
られるため、Ｃ１２Ａ７エレクトライドの電子伝導性を阻害することはない。１段階の高
濃度のリン酸水溶液への浸漬処理によって高抵抗層の除去とリン酸基による修飾が同時に
生じるが、再度低濃度のリン酸水溶液へ浸漬することによってリン酸基による修飾のみを
付加してもよい。
Although phosphoric acid itself does not have electronic conductivity, modification with a phosphate group is limited to a very thin region of the surface, and thus does not inhibit the electronic conductivity of C12A7 electride. Although the removal of the high resistance layer and the modification with the phosphate group occur simultaneously by the immersion treatment in one step of the high concentration phosphoric acid aqueous solution, only the modification with the phosphate group is added by immersing in the low concentration phosphoric acid aqueous solution again. May be.
すなわち、本発明は、（１）１２ＣａＯ・７Ａｌ２Ｏ３エレクトライドを導電性素子材料
として、その表面に金属を蒸着してオーミック接合を形成する方法において、
該素子材料表面をリン酸処理して改質した後、該素子材料表面に金属を蒸着することによ
って、該素子材料表面と該金属との界面の接触抵抗を０．５Ω・ｃｍ２未満とすることを
特徴とするＣ１２Ａ７エレクトライドからなる導電性素子材料表面に対するオーミック接
合形成方法、である。
That is, the present invention relates to (1) a method of forming an ohmic junction by vapor-depositing a metal on the surface of 12CaO · 7Al 2 O 3 electride as a conductive element material.
After the surface of the element material is modified by phosphoric acid treatment, a metal is deposited on the surface of the element material, so that the contact resistance at the interface between the element material surface and the metal is less than 0.5 Ω · cm 2 . An ohmic junction forming method for a conductive element material surface made of C12A7 electride.
また、本発明は、（２）リン酸濃度５０重量％〜９０重量％の水溶液に浸漬することによ
ってリン酸処理することを特徴とする上記（１）のオーミック接合形成方法、である。
The present invention is also (2) the method of forming an ohmic junction according to (1) above, wherein the phosphoric acid treatment is performed by immersing in an aqueous solution having a phosphoric acid concentration of 50 wt% to 90 wt%.
さらに、本発明は、（３）上記（２）のリン酸処理の後、さらにリン酸濃度３重量％〜１
０重量％の水溶液に浸漬することによってリン酸処理することを特徴とする上記（１）の
オーミック接合形成方法、である。
Furthermore, the present invention provides (3) a phosphoric acid concentration of 3 wt% to 1 after the phosphoric acid treatment of (2) above.
The method for forming an ohmic junction according to (1) above, wherein the phosphoric acid treatment is performed by immersing in a 0% by weight aqueous solution.
本発明の方法により、Ｃ１２Ａ７エレクトライドを導電性素子材料として用いる素子に、
接触抵抗の小さいオーミック接合を形成することが可能となった。
By the method of the present invention, an element using C12A7 electride as a conductive element material,
It became possible to form ohmic junctions with low contact resistance.
Ｃ１２Ａ７エレクトライドを電子放出源に使うには、Ｃ１２Ａ７エレクトライドの単結晶
をそのまま電極にする方法や、Ｃ１２Ａ７エレクトライドの微結晶を金属中に分散させて
電極にする方法などがある。また、支持部材の表面に形成して電子注入材料やコレクタ材
料として用いるには、ＰＬＤ法やＣＶＤ法によるＣ１２Ａ７エレクトライドの蒸着、Ｃ１
２Ａ７エレクトライドの微結晶を溶かした溶媒を支持部材の表面に塗布して乾燥させた後
に熱処理や機械的処理を施す方法、エアロゾルデポジション法により支持部材の表面にＣ
１２Ａ７エレクトライドの微結晶を散布した後に熱処理や機械的処理を施す方法、及びＣ
１２Ａ７エレクトライドの結晶を微粉末にして支持部材に焼結させる方法などがある。
In order to use C12A7 electride as an electron emission source, there are a method in which a single crystal of C12A7 electride is used as an electrode as it is, a method in which fine crystals of C12A7 electride are dispersed in a metal and used as an electrode. Also, in order to form on the surface of the support member and use it as an electron injection material or a collector material, vapor deposition of C12A7 electride by CLD method or CVD method, C1
A method in which a solvent in which 2A7 electride microcrystals are dissolved is applied to the surface of the support member and dried, followed by a heat treatment or a mechanical treatment, or C on the surface of the support member by an aerosol deposition method.
A method of performing heat treatment or mechanical treatment after spraying fine crystals of 12A7 electride, and C
There is a method in which crystals of 12A7 electride are made into fine powder and sintered to a support member.
Ｃ１２Ａ７エレクトライドを浸漬するリン酸水溶液は、リン酸（Ｈ3ＰＯ4）、亜リン酸（
Ｈ3ＰＯ3）、次亜リン酸（Ｈ3ＰＯ2）、メタリン酸（ＨＰＯ3）、またはこれらのＮａ、
Ｋ、ＮＨ4塩であるリン酸化合物の中から選択される１または２以上のリン酸水溶液を用
いることができる。その濃度は、処理温度、処理時間との関係で好ましい濃度を適宜選択
することができるが、５０〜９０重量％程度の高濃度が好ましい。９０重量％を超えても
処理時間の短縮効果は少ない。
The phosphoric acid aqueous solution in which C12A7 electride is immersed is phosphoric acid (H 3 PO 4 ), phosphorous acid (
H 3 PO 3 ), hypophosphorous acid (H 3 PO 2 ), metaphosphoric acid (HPO 3 ), or their Na,
One or two or more phosphoric acid aqueous solutions selected from phosphoric acid compounds which are K and NH 4 salts can be used. A preferable concentration can be appropriately selected in relation to the processing temperature and processing time, but a high concentration of about 50 to 90% by weight is preferable. Even if it exceeds 90% by weight, the effect of shortening the treatment time is small.
上記リン酸水溶液の温度は室温以上１００℃未満でよい。加温すれば表面反応は促進され
る。室温で表面改質処理する場合は、処理時間の観点からはリン酸水溶液の濃度はより好
ましくは７０〜９０重量％程度である。
The temperature of the phosphoric acid aqueous solution may be room temperature or higher and lower than 100 ° C. When heated, the surface reaction is accelerated. When the surface modification treatment is performed at room temperature, the concentration of the phosphoric acid aqueous solution is more preferably about 70 to 90% by weight from the viewpoint of treatment time.
上記リン酸水溶液への浸漬時間は、３秒〜３０秒程度が好ましい。３秒未満では表面改質
処理の操作性が良くない。３０秒を超えると表面層が過剰に溶解除去されるのでＣ１２Ａ
７エレクトライドの薄い層を使用する場合には好ましくない。リン酸水溶液への浸漬した
後、取り出してエタノール等のアルコール液に浸してから取り出し、Ｃ１２Ａ７エレクト
ライド表面から余剰のリン酸水溶液を取り除いて乾燥する。
The immersion time in the phosphoric acid aqueous solution is preferably about 3 to 30 seconds. If it is less than 3 seconds, the operability of the surface modification treatment is not good. If it exceeds 30 seconds, the surface layer is excessively dissolved and removed, so C12A
It is not preferred when using a thin layer of 7 electrides. After dipping in an aqueous phosphoric acid solution, the sample is taken out, dipped in an alcohol solution such as ethanol, taken out, and the excess phosphoric acid aqueous solution is removed from the surface of the C12A7 electride and dried.
上記の表面改質処理により高抵抗層が溶解除去されるとともに表面にリン酸基(ＰＯ４)が
吸着し、修飾されると考えられる。このリン酸基による修飾は該表面のごく薄い領域に限
られる。また、ごく表面は水に不溶なリン酸アルミニウム（ＡｌＰＯ４など）に近い組成
の耐水性層になっていると考えられる。
It is considered that the high-resistance layer is dissolved and removed by the above surface modification treatment, and phosphate groups (PO 4 ) are adsorbed on the surface to be modified. This modification with phosphate groups is limited to a very thin area of the surface. Further, it is considered that the very surface is a water-resistant layer having a composition close to that of water-insoluble aluminum phosphate (such as AlPO 4 ).
特に、接合界面に耐水性を付与する場合には、上記リン酸水溶液への浸漬による表面改質
処理の後、さらに低濃度、好ましくは３〜１０重量％程度のリン酸水溶液へ短時間浸漬し
て、表面に水に不溶なリン酸アルミニウム（ＡｌＰＯ４など）に近い組成の耐水性層を形
成することが好ましい。
In particular, when water resistance is imparted to the bonding interface, after surface modification treatment by immersion in the phosphoric acid aqueous solution, it is further immersed in a phosphoric acid aqueous solution of a lower concentration, preferably about 3 to 10% by weight for a short time. Thus, it is preferable to form a water-resistant layer having a composition close to that of aluminum phosphate (such as AlPO 4 ) that is insoluble in water on the surface.
上記リン酸水溶液への浸漬によるＣ１２Ａ７エレクトライドの表面改質処理により、Ｃ１
２Ａ７エレクトライドを導電性素子材料として、その表面に金属を蒸着した場合、界面の
接触抵抗が０．５Ω・ｃｍ２未満のオーミック接合を形成することができる。また、接合
界面における電気抵抗の増加率を１００％／日未満とすることができる。
By the surface modification treatment of C12A7 electride by immersion in the phosphoric acid aqueous solution, C1
When 2A7 electride is used as a conductive element material and a metal is deposited on the surface thereof, an ohmic junction having an interface contact resistance of less than 0.5 Ω · cm 2 can be formed. Moreover, the increase rate of the electrical resistance at the bonding interface can be less than 100% / day.
ＣＺ法で製造したＣ１２Ａ７単結晶を母結晶とし、チタン金属片とともに、シリカガラス
管中に真空封入し、１０００℃、１０時間焼成し、電気伝導性を付与したＣ１２Ａ７エレ
クトライドを製造した。このＣ１２Ａ７エレクトライドの電気伝導度は１０００S・ｃｍ
−１、体積抵抗は０．０５ Ωであった。このＣ１２Ａ７エレクトライドを１×１×５ｍ
ｍ３の小片に切り出した。この小片を８５重量％リン酸水溶液に室温で１０秒間浸漬した
後取り出した。その後、エタノールに浸すことでＣ１２Ａ７エレクトライド単結晶表面か
ら余剰のリン酸水溶液を取り除き大気中で自然乾燥した。
A C12A7 single crystal produced by the CZ method was used as a mother crystal, vacuum sealed in a silica glass tube together with a titanium metal piece, and fired at 1000 ° C. for 10 hours to produce C12A7 electride imparted with electrical conductivity. This C12A7 electride has an electric conductivity of 1000 S · cm.
−1 , volume resistance was 0.05Ω. This C12A7 electride is 1x1x5m
Cut into m 3 pieces. The small piece was immersed in an 85 wt% aqueous phosphoric acid solution at room temperature for 10 seconds and then taken out. Then, the excess phosphoric acid aqueous solution was removed from the C12A7 electride single crystal surface by immersing in ethanol, and it dried naturally in air | atmosphere.
リン酸処理した小片を真空蒸着装置内に入れて、その端面(１×１ｍｍ２)に金電極を500
nm蒸着して接合を形成した。図１(a)に、測定したリン酸処理前及び処理後のＣ１２Ａ７
エレクトライド単結晶と金電極の間の電圧-電流特性（印加電圧―２〜２V ）を示す。処
理前の試料では、電流が電圧に比例せず非線形となる非オーミック性を示し、1Ｖ印加時
の接触抵抗の値は１２ｋΩ・ｃｍ２と大きい。リン酸処理後の試料では電流が電圧に比例
するオーミック性を示し、1Ｖ印加時の抵抗値は１２Ω・ｃｍ２にまで低減された。
A small piece treated with phosphoric acid is placed in a vacuum deposition apparatus, and a gold electrode is placed on the end face (1 × 1 mm 2 ).
nm was deposited to form a bond. FIG. 1 (a) shows the measured C12A7 before and after the phosphoric acid treatment.
The voltage-current characteristic (applied voltage -2 to 2 V) between the electride single crystal and the gold electrode is shown. The sample before treatment shows non-ohmic properties in which the current is not proportional to the voltage and becomes non-linear, and the value of the contact resistance when 1 V is applied is as large as 12 kΩ · cm 2 . The sample after the phosphoric acid treatment showed an ohmic property in which the current was proportional to the voltage, and the resistance value when 1 V was applied was reduced to 12 Ω · cm 2 .
オーミック表面の持続性を検証するために、金電極を形成した1週間後に測定した電圧-電
流特性を図１(b)示す。処理前の試料では、1Ｖ印加時の接触抵抗値が170ｋΩ・ｃｍ２と
なり、オーミック性が見られないばかりか、金電極−Ｃ１２Ａ７エレクトライド間の電気
的接触の劣化が見られたが、リン酸処理後の試料では、依然、オーミック接触が得られ、
接触抵抗値の変化も見られなかった。
In order to verify the durability of the ohmic surface, the voltage-current characteristics measured one week after the gold electrode is formed are shown in FIG. In the sample before the treatment, the contact resistance value when 1 V was applied was 170 kΩ · cm 2 , and not only the ohmic property was observed, but the deterioration of the electrical contact between the gold electrode and the C12A7 electride was observed. In the treated sample, ohmic contact is still obtained,
There was no change in the contact resistance value.
実施例１の方法において、８５重量％リン酸水溶液から取り出し、小片を４重量％リン酸
水溶液に５秒浸漬し、取り出し大気中で自然乾燥した以外は実施例１と同じ方法で接合を
形成した。測定したＣ１２Ａ７エレクトライド単結晶と金電極の間の電圧-電流特性は実
施例１とほぼ同じであった。
In the method of Example 1, a joint was formed in the same manner as in Example 1 except that it was taken out from the 85% by weight phosphoric acid aqueous solution, the small piece was immersed in a 4% by weight phosphoric acid aqueous solution for 5 seconds, and taken out naturally dried in the air. . The measured voltage-current characteristics between the C12A7 electride single crystal and the gold electrode were almost the same as in Example 1.
接合前に小片の表面の組成の分析を行うために、Ｘ線光電子分光(ＸＰＳ)スペクトルを測
定した。図２に結果を示す。アルミニウムのピーク(Ａｌ２ｓ及びＡｌ２ｐ）のピーク強
度を基準とすると、リン酸処理後、リン（Ｐ２ｓ、Ｐ２ｐ）及び酸素（Ｏ１ｓ）のピーク
強度が増加していることがわかる。これは、リン酸基(ＰＯ４)がＣ１２Ａ７表面に吸着し
ていることを示す。一方、Ｃａ （Ｃａ２ｐ、Ｃａ２ｓ）のピーク強度に若干（〜１５％
）の減少が見られることから、ごく表面は水に不溶なリン酸アルミニウム（ＡｌＰＯ４な
ど）に近い組成になっていると考えられる。
An X-ray photoelectron spectroscopy (XPS) spectrum was measured in order to analyze the composition of the surface of the pieces before bonding. The results are shown in FIG. Based on the peak intensity of aluminum peaks (Al2s and Al2p), it can be seen that the peak intensity of phosphorus (P2s, P2p) and oxygen (O1s) increases after the phosphoric acid treatment. This indicates that the phosphate group (PO 4 ) is adsorbed on the C12A7 surface. On the other hand, the peak intensity of Ca (Ca2p, Ca2s) is slightly (˜15%)
), The very surface is considered to have a composition close to that of water-insoluble aluminum phosphate (such as AlPO 4 ).
本発明の方法により接触抵抗の小さいオーミック接合を形成することが可能となったので
、ＦＥＤの冷電子放出源、ＰＤＰの２次電子放出源、有機ＥＬ素子のための電子注入電極
、熱電子発電素子等としてのＣ１２Ａ７エレクトライドの応用が促進される。
Since it is possible to form an ohmic junction with a low contact resistance by the method of the present invention, an FED cold electron emission source, a PDP secondary electron emission source, an electron injection electrode for an organic EL device, a thermionic power generation Application of C12A7 electride as an element or the like is promoted.
Claims (3)
着してオーミック接合を形成する方法において、
該素子材料表面をリン酸処理して改質した後、該素子材料表面に金属を蒸着することによ
って、該素子材料表面と該金属との界面の接触抵抗を０．５Ω・ｃｍ２未満とすることを
特徴とするＣ１２Ａ７エレクトライドからなる導電性素子材料表面に対するオーミック接
合形成方法。 In the method of forming ohmic junction by depositing metal on the surface of 12CaO · 7Al 2 O 3 electride as a conductive element material,
After the surface of the element material is modified by phosphoric acid treatment, a metal is deposited on the surface of the element material, so that the contact resistance at the interface between the element material surface and the metal is less than 0.5 Ω · cm 2 . A method for forming an ohmic junction with respect to the surface of a conductive element material made of C12A7 electride.
を特徴とする請求項１記載のオーミック接合形成方法。 2. The ohmic junction forming method according to claim 1, wherein the phosphoric acid treatment is performed by immersing in an aqueous solution having a phosphoric acid concentration of 50 wt% to 90 wt%.
することによってリン酸処理することを特徴とする請求項１記載のオーミック接合形成方
法。 The method of forming an ohmic junction according to claim 1, wherein after the phosphoric acid treatment according to claim 2, the phosphoric acid treatment is further performed by immersing in an aqueous solution having a phosphoric acid concentration of 3 wt% to 10 wt%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008208753A JP5106313B2 (en) | 2008-08-13 | 2008-08-13 | Method for forming ohmic junction to the surface of conductive element material comprising C12A7 electride |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008208753A JP5106313B2 (en) | 2008-08-13 | 2008-08-13 | Method for forming ohmic junction to the surface of conductive element material comprising C12A7 electride |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010045228A true JP2010045228A (en) | 2010-02-25 |
| JP5106313B2 JP5106313B2 (en) | 2012-12-26 |
Family
ID=42016368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008208753A Active JP5106313B2 (en) | 2008-08-13 | 2008-08-13 | Method for forming ohmic junction to the surface of conductive element material comprising C12A7 electride |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5106313B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012157462A1 (en) * | 2011-05-13 | 2012-11-22 | 旭硝子株式会社 | Method for producing member containing conductive mayenite compound |
| DE102012000718A1 (en) | 2012-01-14 | 2013-07-18 | Hans-Josef Sterzel | Reversible electrical energy storage device such as reversible battery for fossil fuel propelled vehicle, has non-conductive, insulating depletion region that is formed in electride portion of n-type semiconductor portion |
| DE102012010302A1 (en) | 2012-05-24 | 2013-11-28 | Hans-Josef Sterzel | Solid body arrangement for conversion of thermal power into electrical power to produce temperature difference for air conditioning of e.g. home, has emitter located at arrester hot side, and collector layer contacted by another arrester |
| WO2013191212A1 (en) * | 2012-06-20 | 2013-12-27 | 国立大学法人東京工業大学 | Organic electroluminescence element |
| DE102012015645A1 (en) | 2012-08-07 | 2014-02-13 | Hans-Josef Sterzel | Reversible electrical energy storage device i.e. lithium-ion battery, for storing electrical energy for operating vehicle, has isolating narrow depletion zone formed in semiconducting volume that comprises wide band gap |
| DE102013000118A1 (en) | 2013-01-04 | 2014-07-10 | Hans-Josef Sterzel | Electrolytic capacitor has current collectors, open porous electrodes made of n-type semiconductor and metallic conductor, liquid electrolyte and porous spacer for separating electrodes |
| WO2014163116A1 (en) * | 2013-04-03 | 2014-10-09 | 旭硝子株式会社 | Organic electroluminescent device |
| WO2014192701A1 (en) * | 2013-05-28 | 2014-12-04 | 旭硝子株式会社 | Semiconductor device and semiconductor device manufacturing method |
| US10249402B2 (en) | 2012-06-20 | 2019-04-02 | Tokyo Institute Of Technology | C12A7 electride thin film fabrication method and C12A7 electride thin film |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0964174A (en) * | 1995-08-18 | 1997-03-07 | Mitsubishi Electric Corp | Fabrication method of semiconductor device |
| JPH10209072A (en) * | 1997-01-17 | 1998-08-07 | Matsushita Electric Ind Co Ltd | Formation of electrode of nitride compound semiconductor |
| JP2005116801A (en) * | 2003-10-08 | 2005-04-28 | Toshiba Corp | Method for manufacturing semiconductor device |
| JP2009212520A (en) * | 2008-03-03 | 2009-09-17 | Samsung Mobile Display Co Ltd | Thin-film transistor and flat panel display device equipped with it |
-
2008
- 2008-08-13 JP JP2008208753A patent/JP5106313B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0964174A (en) * | 1995-08-18 | 1997-03-07 | Mitsubishi Electric Corp | Fabrication method of semiconductor device |
| JPH10209072A (en) * | 1997-01-17 | 1998-08-07 | Matsushita Electric Ind Co Ltd | Formation of electrode of nitride compound semiconductor |
| JP2005116801A (en) * | 2003-10-08 | 2005-04-28 | Toshiba Corp | Method for manufacturing semiconductor device |
| JP2009212520A (en) * | 2008-03-03 | 2009-09-17 | Samsung Mobile Display Co Ltd | Thin-film transistor and flat panel display device equipped with it |
Non-Patent Citations (1)
| Title |
|---|
| JPN6012042088; Ｔ．Ｋａｍｉｙａ ｅｔ ａｌ: 'Ｆｉｅｌｄ-Ｉｎｄｕｃｅｄ Ｃｕｒｒｅｎｔ Ｍｏｄｕｌａｔｉｏｎ ｉｎ Ｎａｎｏｐｏｒｏｕｓ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ， Ｅｌｅｃｔｒｏｎ-Ｄｏｐｅｄ １２ＣａＯ・７Ａｌ２Ｏ３' Ｃｈｅｍｉｓｔｒｙ ｏｆ Ｍａｔｅｒｉａｌｓ Ｖｏｌ．１７， Ｎｏ．２５, 20051108, ｐｐ．６３１１-６３１６ * |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012157462A1 (en) * | 2011-05-13 | 2012-11-22 | 旭硝子株式会社 | Method for producing member containing conductive mayenite compound |
| DE102012000718A1 (en) | 2012-01-14 | 2013-07-18 | Hans-Josef Sterzel | Reversible electrical energy storage device such as reversible battery for fossil fuel propelled vehicle, has non-conductive, insulating depletion region that is formed in electride portion of n-type semiconductor portion |
| DE102012010302A1 (en) | 2012-05-24 | 2013-11-28 | Hans-Josef Sterzel | Solid body arrangement for conversion of thermal power into electrical power to produce temperature difference for air conditioning of e.g. home, has emitter located at arrester hot side, and collector layer contacted by another arrester |
| KR20150020577A (en) * | 2012-06-20 | 2015-02-26 | 고쿠리츠다이가쿠호진 토쿄고교 다이가꾸 | Organic electroluminescence element |
| WO2013191212A1 (en) * | 2012-06-20 | 2013-12-27 | 国立大学法人東京工業大学 | Organic electroluminescence element |
| JPWO2013191212A1 (en) * | 2012-06-20 | 2016-05-26 | 国立大学法人東京工業大学 | Organic electroluminescence device |
| US9368739B2 (en) | 2012-06-20 | 2016-06-14 | Tokyo Institute Of Technology | Organic electroluminescence element |
| TWI589043B (en) * | 2012-06-20 | 2017-06-21 | Japan Science & Tech Agency | Organic electroluminescent device |
| US10249402B2 (en) | 2012-06-20 | 2019-04-02 | Tokyo Institute Of Technology | C12A7 electride thin film fabrication method and C12A7 electride thin film |
| KR102013125B1 (en) * | 2012-06-20 | 2019-08-22 | 고쿠리츠켄큐카이하츠호진 카가쿠기쥬츠신코키코 | Organic electroluminescence element |
| DE102012015645A1 (en) | 2012-08-07 | 2014-02-13 | Hans-Josef Sterzel | Reversible electrical energy storage device i.e. lithium-ion battery, for storing electrical energy for operating vehicle, has isolating narrow depletion zone formed in semiconducting volume that comprises wide band gap |
| DE102013000118A1 (en) | 2013-01-04 | 2014-07-10 | Hans-Josef Sterzel | Electrolytic capacitor has current collectors, open porous electrodes made of n-type semiconductor and metallic conductor, liquid electrolyte and porous spacer for separating electrodes |
| WO2014163116A1 (en) * | 2013-04-03 | 2014-10-09 | 旭硝子株式会社 | Organic electroluminescent device |
| WO2014192701A1 (en) * | 2013-05-28 | 2014-12-04 | 旭硝子株式会社 | Semiconductor device and semiconductor device manufacturing method |
| JP2015029038A (en) * | 2013-05-28 | 2015-02-12 | 旭硝子株式会社 | Semiconductor device and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5106313B2 (en) | 2012-12-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5106313B2 (en) | Method for forming ohmic junction to the surface of conductive element material comprising C12A7 electride | |
| US9001495B2 (en) | High power and high energy electrodes using carbon nanotubes | |
| JP2012009429A5 (en) | ||
| KR20140113437A (en) | Sensor and sensing method | |
| JP2010275186A5 (en) | ||
| JP2017510042A (en) | Active cathode materials for secondary lithium cells and batteries | |
| CN105070619A (en) | Preparation method for carbon nanotube array cathode on Fe-based metal alloy substrate | |
| Ray et al. | Electrical and electronic properties of nitrogen doped amorphous carbon (a-CNx) thin films | |
| TW201347282A (en) | Carbon electrode devices for use with liquids and associated methods | |
| Li et al. | Enhancement of thermoelectric properties in Bi–Sb–Te alloy nanowires by pulsed electrodeposition | |
| JP2014055313A (en) | Mayenite composite material and electron emitting negative electrode | |
| Li et al. | Controllable Ag nanoparticle coated ZnO nanorod arrays on an alloy substrate with enhanced field emission performance | |
| CN107937949B (en) | Method for preparing two-dimensional layered vertical heterojunction | |
| JP2018055926A (en) | Sulfide solid battery | |
| JP6667141B2 (en) | Solid electrolyte containing oxynitride and secondary battery using the same | |
| JP2016126993A (en) | Carbon nanotube paste for high-output field-emission emitter, and manufacturing method thereof | |
| KR20160019585A (en) | Antibacterial film using fluorine functionalized graphene and fabrication method | |
| JP5798279B1 (en) | Method for manufacturing tungsten-based capacitor element | |
| Liao et al. | Tunable transport properties of n-type ZnO nanowires by Ti plasma immersion ion implantation | |
| JP2014116509A (en) | Thermoelectric power generation element and method of manufacturing thermoelectric power generation element | |
| CN109476494B (en) | Method for producing electronically crystallized mayenite type compound | |
| CN103964417B (en) | A kind of preparation method of the doped graphene containing Ge element | |
| JP2010116303A (en) | Substrate for growing carbon nanotube, transistor, and method for manufacturing substrate for growing carbon nanotube | |
| WO2015166670A1 (en) | Method for manufacturing tungsten-based capacitor element | |
| WO2017046038A1 (en) | Coated electrical conductors and methods for their manufacture |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120814 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120904 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120925 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121002 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5106313 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151012 Year of fee payment: 3 |
|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |