JP2010041714A - High frequency substrate, and high frequency module - Google Patents
High frequency substrate, and high frequency module Download PDFInfo
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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Abstract
Description
本発明は、主としてマイクロ波帯およびミリ波帯で用いる高周波素子を実装するための高周波基板および高周波モジュールに関する。 The present invention relates to a high-frequency substrate and a high-frequency module for mounting a high-frequency element mainly used in a microwave band and a millimeter wave band.
近年、携帯電話や無線ＬＡＮに代表される無線通信技術の研究開発が盛んに行われている。無線通信の研究開発においては、光通信で代表されるＦＴＴＨ（Fiber to The Home
）の伝送速度、１００Ｍｂｐｓ以上を達成しているものもある。しかし、現在市販されている無線通信機器の伝送速度は光通信のそれには及ばない。多くの無線通信機器では、マイクロ波が搬送波として利用されているが、マイクロ波ではデータ伝送速度が遅く、例えば、ハイビジョン映像の画質劣化を抑えた、大容量非圧縮映像データの転送には向いていない。
In recent years, research and development of wireless communication technologies typified by mobile phones and wireless LANs have been actively conducted. In research and development of wireless communication, FTTH (Fiber to The Home) represented by optical communication
Some have achieved a transmission rate of 100 Mbps or higher). However, the transmission speed of wireless communication devices currently on the market is less than that of optical communication. In many wireless communication devices, microwaves are used as carrier waves. However, microwaves have a low data transmission rate, and are suitable for transferring large-capacity uncompressed video data that suppresses image quality degradation of high-definition video, for example. Absent.
そこで、マイクロ波よりも高い周波数の電磁波、例えば２０ＧＨｚ以上の準ミリ波およびミリ波を利用する無線通信が、大容量のデータを伝送するための手段として、以前から注目され、研究開発が進められている。特に６０ＧＨｚ帯では、世界共通で、広い帯域が通信向けに割り当てられており、このような６０ＧＨｚ帯の電磁波を利用する無線通信は、現在実用化され、光ファイバ通信に代えて、事業所間通信などに用いられ、普及しつつある。また、自動車の安全運転をサポートするものとして、ミリ波帯を用いたレーダーシステムが一般の乗用車に搭載されるようにもなっている。 Therefore, wireless communication using electromagnetic waves having a frequency higher than that of microwaves, for example, quasi-millimeter waves and millimeter waves of 20 GHz or more, has been attracting attention as a means for transmitting large amounts of data, and research and development have been promoted. ing. Particularly in the 60 GHz band, a wide band is allocated for communication in the world, and wireless communication using such 60 GHz band electromagnetic waves has been put into practical use, and communication between offices is used instead of optical fiber communication. It is used for such as and is spreading. In addition, a radar system using a millimeter wave band is also installed in a general passenger car as a means to support safe driving of automobiles.
これらの通信システムで使用される高周波基板には、より広帯域化、小型、多機能、耐不要ノイズ、かつ安価であることの要求が高く、これらの要求に応えるべく、基板の多層化で対応してきた。特に小型化が可能な高誘電率材料であるセラミックスを誘電体層とする多層配線基板は、配線金属との同時焼成技術を用いることで基板の多層化を実現してきた。 High-frequency boards used in these communication systems are required to have a wider bandwidth, smaller size, more functions, unwanted noise resistance, and lower cost. To meet these demands, multilayer boards have been used. It was. In particular, a multilayer wiring board using a ceramic, which is a high dielectric constant material that can be miniaturized, as a dielectric layer has realized the multilayering of the board by using a simultaneous firing technique with a wiring metal.
このような高周波基板には、複数の高周波デバイスが実装され、それらが高周波デバイスと伝送線路との変換部を介して、伝送線路と接続されることにより高周波回路として動作する。高周波デバイスは、外部から到来する干渉信号の混入を防ぎ、また外部からの水蒸気、侵食性ガス等から高周波デバイスを保護するため、金属キャップや、金属メッキまたは金属メタライズを施したセラミック壁およびカバーなどの保護部材で周囲を囲んで封止される。高周波デバイス自体がパッシベーション絶縁膜で保護される場合もある。 A plurality of high-frequency devices are mounted on such a high-frequency substrate, and operate as a high-frequency circuit by being connected to the transmission line via a converter between the high-frequency device and the transmission line. High frequency devices prevent metal interference signals coming from outside and protect high frequency devices from external water vapor, erosive gases, etc., metal caps, ceramic walls and covers with metal plating or metallization, etc. The periphery is sealed with a protective member. In some cases, the high-frequency device itself is protected by a passivation insulating film.
従来は、高周波デバイス間を接続する伝送線路にはマイクロストリップ線路、コプレナー線路およびストリップ線路等の金属配線による平面回路が用いられており、上記のように、外部から到来する干渉信号の混入を防ぐこと、外部への電磁波の放射を防ぐことを目的とした場合、高周波デバイスだけではなく、平面回路を構成する金属配線も保護部材の収容空間内に収める必要があり、その結果、平面回路によって接続された複数の高周波デバイスを平面回路ごとまとめて封止する構造が必要となる。 Conventionally, a planar circuit using metal wiring such as a microstrip line, a coplanar line, and a strip line is used as a transmission line for connecting high-frequency devices, and as described above, mixing of interference signals coming from outside is prevented. In addition, when it is intended to prevent radiation of electromagnetic waves to the outside, not only high-frequency devices but also metal wiring that constitutes the planar circuit must be accommodated in the protective member housing space. A structure for sealing the plurality of high-frequency devices together with the planar circuit is required.
たとえば、特許文献１には、２つの高周波デバイスは、高周波デバイスの信号入出力パッドとボンディングワイヤおよびマイクロストリップ線路で接続され、２つの高周波デバイスおよびボンディングワイヤ、マイクロストリップ線路はシールリングおよびキャップにより一つの空間内で封止される構成が開示されている。 For example, in Patent Document 1, two high-frequency devices are connected to a signal input / output pad of the high-frequency device by a bonding wire and a microstrip line, and the two high-frequency devices, the bonding wire, and the microstrip line are connected by a seal ring and a cap. A configuration that is sealed in one space is disclosed.
また、特許文献２には、高周波素子と外部電気回路とを接続する高周波伝送線路が、一対の主導体層と導体層間を接続するバイアホール群で形成される高周波素子収納用パッケージが開示されている。 Patent Document 2 discloses a high-frequency element storage package in which a high-frequency transmission line connecting a high-frequency element and an external electric circuit is formed by a via hole group connecting a pair of main conductor layers and conductor layers. Yes.
特許文献１記載のように、複数の高周波デバイスを一つのキャップにより共通の収容空間内で封止すると、収容空間内で高周波デバイス間の信号の結合が起こることがある。送信信号と比較して受信信号の電力は小さいため、特に送信用の高周波デバイスから出力された信号が、受信用の高周波デバイスまたは受信用の高周波デバイスに接続された伝送線路に結合してしまうと受信信号にノイズが生じてしまうことになる。 As described in Patent Document 1, when a plurality of high-frequency devices are sealed in a common accommodation space by a single cap, coupling of signals between the high-frequency devices may occur in the accommodation space. Since the power of the received signal is small compared to the transmitted signal, especially when the signal output from the transmitting high-frequency device is coupled to the receiving high-frequency device or the transmission line connected to the receiving high-frequency device. Noise will occur in the received signal.
さらに複数の高周波デバイス間をマイクロストリップ線路、コプレナー線路、ストリップ線路等の平面回路の信号線路で接続すると信号線路同士の結合により、信号にノイズが混入したり、外部からの不要電磁波が信号線路に結合して信号にノイズが混入したり、外部へ電磁波を放射することにより、他の機器に悪影響を及ぼすという問題もある。さらに小型化のためにモジュールを集積化する過程において、特に不要電磁波の抑制や遮蔽技術が課題であった。 In addition, when multiple high-frequency devices are connected by a signal line of a planar circuit such as a microstrip line, coplanar line, or strip line, noise may be mixed into the signal due to the coupling of the signal lines, or unnecessary electromagnetic waves from the outside may be applied to the signal line. There is also a problem in that noise is mixed in the signal by combining and radiating electromagnetic waves to the outside, thereby adversely affecting other devices. Further, in the process of integrating modules for miniaturization, particularly the problem of suppressing unnecessary electromagnetic waves and shielding technology has been a problem.
特許文献２では、高周波伝送線路を、誘電体基板の内部に形成しているが、高周波素子と伝送線路との変換部は、接続プローブを介して行われており、接続プローブを中心導体とし、バイアホールを外部導体とする同軸構造となっている。 In Patent Document 2, the high-frequency transmission line is formed inside the dielectric substrate, but the conversion portion between the high-frequency element and the transmission line is performed via a connection probe, and the connection probe is a central conductor. It has a coaxial structure with via holes as outer conductors.
このような同軸構造の場合、伝送する信号が接続プローブの長さによって共振するため、反射特性において、この共振による共振周波数で極を持つことから狭帯域特性になる。また、同軸構造では、中心導体に電流密度が集中するため、伝送損失が大きくなる。 In the case of such a coaxial structure, since the signal to be transmitted resonates with the length of the connection probe, the reflection characteristic has a pole at the resonance frequency due to this resonance, resulting in a narrow band characteristic. Further, in the coaxial structure, the current density is concentrated on the center conductor, so that transmission loss is increased.
本発明の目的は、このような事情に鑑みてなされたものであり、外部からの不要電磁波の混入、外部への電磁波の放射を防止するとともに、高周波素子間の不要な結合を抑制したアイソレーション特性に優れ、かつ広帯域低損失接続体により高感度な高周波基板および高周波モジュールを提供することである。 The object of the present invention has been made in view of such circumstances, and is an isolation that prevents the introduction of unnecessary electromagnetic waves from the outside and the emission of electromagnetic waves to the outside and suppresses unnecessary coupling between high-frequency elements. An object of the present invention is to provide a high-frequency substrate and a high-frequency module that have excellent characteristics and are highly sensitive by a broadband low-loss connector.
本発明は、誘電体層および導電体層を積層して成り、複数の高周波素子を実装するための高周波基板において、
副線路部と主線路部と変換部とを有する積層型導波管であって、
前記副線路部は、前記誘電体層と、前記誘電体層を挟んで対向する副線路部上側主導体層及び副線路部下側主導体層と、この一対の副線路部上側及び下側主導体層を厚み方向に電気的に接続するように信号伝達方向に遮断波長以下の間隔で形成された二列のビアホール導体群と、を含み、
前記主線路部は、前記副線路部に接続され、前記副線路部の誘電体層よりも厚い誘電体層と、この誘電体層を挟んで対向する主線路部上側主導体層及び主線路部下側主導体層と、この一対の主線路部上側及び下側主導体層を厚み方向に電気的に接続するように信号伝達方向に遮断波長以下の間隔で形成された二列のビアホール導体群と、を含み、
前記変換部は、前記副線路部及び前記主線路部の前記上側主導体層が一体的に形成されて成る、
積層型導波管と、
前記積層型導波管に接続され、前記高周波素子同士を接続する接続用積層型導波管であって、
前記誘電体層を挟む一対の主導体層と、信号伝達方向に遮断波長以下の間隔で前記主導体層間を電気的に接続するように形成された二列のビアホール導体群とを備え、前記主導体層および前記ビアホール導体群に囲まれた領域によって高周波信号を伝達し、前記一対の主導体層のうち上側主導体層は、前記変換部より下側に位置し、前記一対の主導体層のうち下側主導体層は、前記副線路部下側主導体層よりも下側に位置する、前記高周波基板に内層される接続用積層型導波管と、
前記主線路部上側主導体層に接続されて形成される上側共有線路主導体層と、前記接続用導波管線路の下側主導体層に接続される下側共有線路主導体層と、この１対の共有線路主導体層に挟まれる前記誘電体層と、厚み方向に対向する上側共有線路主導体層及び下側共有線路主導体層と、前記上側共有線路主導体層及び下側共有線路主導体層を厚み方向に電気的に接続するように信号伝達方向に遮断波長以下の間隔で形成された二列のビアホール導体群とを含む共有線路部と、
前記高周波素子と、前記変換部とを接続する接続体と、
１つの高周波素子と、該高周波素子に接続される前記接続体と、該接続体に接続される前記変換部とを内部に収容する収容空間を有し、前記収容空間と外部空間との間で電磁波を遮蔽する保護部材とを備えることを特徴とする。
The present invention comprises a dielectric layer and a conductor layer laminated, and in a high frequency substrate for mounting a plurality of high frequency elements,
A laminated waveguide having a sub line portion, a main line portion, and a conversion portion,
The sub-line portion includes the dielectric layer, the sub-line portion upper main conductor layer and the sub-line portion lower main conductor layer facing each other with the dielectric layer interposed therebetween, and the pair of sub-line portion upper and lower main conductors. Two rows of via-hole conductor groups formed at intervals equal to or shorter than the cutoff wavelength in the signal transmission direction so as to electrically connect the layers in the thickness direction,
The main line portion is connected to the sub line portion, and is thicker than the dielectric layer of the sub line portion, and the main line portion upper main conductor layer and the main line portion under the dielectric layer sandwiching the dielectric layer. A side main conductor layer and two rows of via-hole conductor groups formed at intervals equal to or less than the cutoff wavelength in the signal transmission direction so as to electrically connect the pair of main line portion upper and lower main conductor layers in the thickness direction; Including,
The conversion part is formed by integrally forming the upper main conductor layer of the sub line part and the main line part.
A laminated waveguide;
A laminated waveguide for connection connected to the laminated waveguide and connecting the high frequency elements to each other,
A pair of main conductor layers sandwiching the dielectric layer, and two rows of via-hole conductor groups formed so as to electrically connect the main conductor layers at intervals equal to or shorter than a cutoff wavelength in the signal transmission direction, A high-frequency signal is transmitted by a region surrounded by the body layer and the via-hole conductor group, and the upper main conductor layer of the pair of main conductor layers is located below the conversion unit, and the pair of main conductor layers Of these, the lower main conductor layer is located below the lower main conductor layer of the sub-line portion, and the connecting laminated waveguide that is layered on the high-frequency substrate;
An upper shared line main conductor layer formed connected to the upper main conductor layer of the main line section; a lower shared line main conductor layer connected to the lower main conductor layer of the connecting waveguide line; The dielectric layer sandwiched between a pair of shared line main conductor layers, the upper shared line main conductor layer and the lower shared line main conductor layer opposed in the thickness direction, and the upper shared line main conductor layer and the lower shared line A shared line portion including two rows of via-hole conductor groups formed at intervals of a cutoff wavelength or less in the signal transmission direction so as to electrically connect the main conductor layer in the thickness direction;
A connecting body for connecting the high-frequency element and the converter;
There is an accommodation space for accommodating one high-frequency element, the connection body connected to the high-frequency element, and the conversion unit connected to the connection body, and between the accommodation space and the external space And a protective member that shields electromagnetic waves.
また本発明は、前記積層型導波管または接続用積層型導波管は、前記一対の主導体層間に該主導体層と平行に形成され、前記二列のビアホール導体群を列ごとにそれぞれ個別に電気的に接続する、少なくとも一対の副導体層をさらに備えることを特徴とする。 In the present invention, the laminated waveguide or the connecting laminated waveguide is formed in parallel with the main conductor layer between the pair of main conductor layers, and the two rows of via-hole conductor groups are arranged in each row. It further comprises at least a pair of sub-conductor layers that are electrically connected individually.
また本発明は、前記複数の高周波素子は、高周波信号受信用の高周波素子と、高周波信号送信用の高周波素子とを含むことを特徴とする。 The present invention is characterized in that the plurality of high-frequency elements include a high-frequency element for receiving a high-frequency signal and a high-frequency element for transmitting a high-frequency signal.
また本発明は、前記複数の高周波素子を実装する面とは反対の面に高周波信号の入出力ポートを備え、
前記積層型導波管は、前記高周波素子同士を接続する接続用積層型導波管と、前記高周波素子と前記入出力ポートとを接続する入出力用積層型導波管とを含むことを特徴とする。
In addition, the present invention includes a high-frequency signal input / output port on a surface opposite to the surface on which the plurality of high-frequency elements are mounted,
The laminated waveguide includes a connecting laminated waveguide that connects the high-frequency elements, and an input / output laminated waveguide that connects the high-frequency element and the input / output port. And
また本発明は、前記接続体は、ボンディングワイヤとマイクロストリップ線路とを含み、前記高周波素子と、前記変換部とはワイヤボンディングにより接続されることを特徴とする。 In the invention, it is preferable that the connection body includes a bonding wire and a microstrip line, and the high-frequency element and the converter are connected by wire bonding.
また本発明は、前記接続体は、金属バンプまたははんだボールを含み、前記高周波素子と、前記変換部とはフリップチップ接続されることを特徴とする。 In the invention, it is preferable that the connection body includes a metal bump or a solder ball, and the high-frequency element and the conversion unit are flip-chip connected.
また本発明は、前記高周波素子を実装する側の主面に設けられたバイアス供給用パッドと、
前記高周波素子を実装する側の主面に設けられた外部接続用パッドと、
内層に設けられ、前記バイアス供給用パッドと前記外部接続用パッドとを接続するバイアス供給用配線と、をさらに備え、
前記高周波素子は、前記バイアス供給用パッドとワイヤボンディング接続またはフリップチップ接続により接続された接続パッドを有し、該接続パッドに対し、前記外部接続用パッドを介して前記高周波素子の駆動用バイアス電圧を供給可能に構成されていることを特徴とする。
Further, the present invention provides a bias supply pad provided on the main surface on the side where the high-frequency element is mounted,
An external connection pad provided on the main surface on which the high-frequency element is mounted;
A bias supply wiring provided in an inner layer and connecting the bias supply pad and the external connection pad; and
The high-frequency element has a connection pad connected to the bias supply pad by wire bonding connection or flip-chip connection, and the bias voltage for driving the high-frequency element to the connection pad via the external connection pad It is comprised so that supply is possible.
また本発明は、上記の高周波基板に、複数の高周波素子を実装して構成される高周波モジュールである。 Moreover, this invention is a high frequency module comprised by mounting a some high frequency element in said high frequency board | substrate.
本発明によれば、高周波素子同士は、積層型導波管によって接続され、高周波素子と、前記積層型導波管とは接続体によって接続し、前記接続体は、変換部を介して前記積層型導波管に接続する。 According to the present invention, the high-frequency elements are connected to each other by a laminated waveguide, the high-frequency element and the laminated waveguide are connected to each other by a connecting body, and the connecting body is connected to the laminated multilayer via a conversion unit. Connect to the type waveguide.
保護部材は、収容空間と外部空間との間で電磁波を遮蔽し、１つの高周波素子と、該高周波素子に接続される接続体、および該接続体に接続される変換部とを、収容空間内に収容する。 The protection member shields electromagnetic waves between the accommodation space and the external space, and includes one high-frequency element, a connection body connected to the high-frequency element, and a conversion unit connected to the connection body in the accommodation space. To house.
これにより、保護部材により外部からの不要電磁波によるノイズが混入を防ぐとともに、外部への電磁波放射による他の機器への悪影響を防ぐという効果に加えて、同じ基板上に実装されている半導体素子同士のアイソレーション特性を極めて高くすることができる。 Thereby, in addition to the effect of preventing noise due to unnecessary electromagnetic waves from the outside by the protective member and preventing the adverse effect on other devices due to the electromagnetic radiation to the outside, between the semiconductor elements mounted on the same substrate Isolation characteristics of the film can be made extremely high.
また本発明によれば、上記のような高周波基板を用いることで、特に送信用半導体素子と受信用半導体素子とを実装した送受信用の高周波モジュールにおいて、半導体素子同士のアイソレーション特性を高めて、高品質な送受信特性を実現することができる。 Further, according to the present invention, by using the high-frequency substrate as described above, particularly in a high-frequency module for transmission / reception in which a transmission semiconductor element and a reception semiconductor element are mounted, the isolation characteristics between the semiconductor elements are increased, High quality transmission / reception characteristics can be realized.
図１は、本発明の実施の一形態である高周波基板１の構成を示す斜視図である。なお、基板の内部およびキャップの内部の構造がわかるように、内層配線、ＭＭＩＣ、ボンディングワイヤなどを実線で示した。図２は、図１の切断面線ＩＩ−ＩＩで切断したときの断面図である。 FIG. 1 is a perspective view showing a configuration of a high-frequency substrate 1 according to an embodiment of the present invention. The inner layer wiring, MMIC, bonding wires, etc. are shown by solid lines so that the structure inside the substrate and inside the cap can be understood. FIG. 2 is a cross-sectional view taken along the cutting plane line II-II in FIG.
高周波基板１の表面には、受信用ＭＭＩＣ２、送信用ＭＭＩＣ３が実装されて高周波モジュールを構成しており、受信用ＭＭＩＣ２、送信用ＭＭＩＣ３をそれぞれ保護するための保護部材４，５が、保護部材４，５と基板表面とで構成される収容空間内に受信用ＭＭＩＣ２、送信用ＭＭＩＣ３を収容するように設けられている。 A reception MMIC 2 and a transmission MMIC 3 are mounted on the surface of the high-frequency substrate 1 to constitute a high-frequency module. The protection members 4 and 5 for protecting the reception MMIC 2 and the transmission MMIC 3 are respectively a protection member 4. , 5 and the substrate surface are provided so as to accommodate the receiving MMIC 2 and the transmitting MMIC 3.
高周波基板１の、受信用ＭＭＩＣ２、送信用ＭＭＩＣ３が実装されている面とは反対の面において、高周波基板１は、アンテナ基板１００に積層される。 The high frequency substrate 1 is laminated on the antenna substrate 100 on the surface of the high frequency substrate 1 opposite to the surface on which the reception MMIC 2 and the transmission MMIC 3 are mounted.
受信用ＭＭＩＣ２と送信用ＭＭＩＣ３とは、これらを接続する積層型導波管線路（以下、接続用導波管という）によって電気的に接続される。 The receiving MMIC 2 and the transmitting MMIC 3 are electrically connected by a laminated waveguide line (hereinafter referred to as a connecting waveguide) that connects them.
積層型導波管線路は、誘電体層が２つの導体層とこれらを電気的に接続するビアホール導体群とで囲まれるように構成され、高周波信号を伝送させるための線路のうち、誘電体（導波管）に高周波信号を伝送させるものである。 A laminated waveguide line is configured so that a dielectric layer is surrounded by two conductor layers and a via-hole conductor group that electrically connects them. Among the lines for transmitting a high-frequency signal, a dielectric ( A high-frequency signal is transmitted to the waveguide).
接続用導波管６と受信用ＭＭＩＣ２とは、ボンディングワイヤ７および変換部９を介して接続される。受信用ＭＭＩＣ２の図示しない接続パッドにボンディングワイヤ７の一方端が接続され、ボンディングワイヤ７の他方端が変換部９に接続される。変換部９は、接続用導波管６に一方端部６ａで接続される。 The connecting waveguide 6 and the receiving MMIC 2 are connected via the bonding wire 7 and the conversion unit 9. One end of the bonding wire 7 is connected to a connection pad (not shown) of the receiving MMIC 2, and the other end of the bonding wire 7 is connected to the conversion unit 9. The converter 9 is connected to the connecting waveguide 6 at one end 6a.
積層型導波管線路および表面配線から積層型導波管線路への変換部の詳細については、後述する。 Details of the conversion unit from the multilayer waveguide line and the surface wiring to the multilayer waveguide line will be described later.
ボンディングワイヤ７と変換部９とは、直接的に接続してもよいし、本実施形態のように、マイクロストリップ線路１１を介して接続してもよい。また、マイクロストリップ線路１１には、インピーダンス整合用のスタブ１１ａを設けることが好ましい。 The bonding wire 7 and the conversion unit 9 may be directly connected or may be connected via the microstrip line 11 as in the present embodiment. The microstrip line 11 is preferably provided with a stub 11a for impedance matching.
接続用導波管６と送信用ＭＭＩＣ３との接続も同様に、ボンディングワイヤ８および変換部１０を介して行われる。 Similarly, the connection waveguide 6 and the transmission MMIC 3 are connected via the bonding wire 8 and the converter 10.
送信用ＭＭＩＣ３の図示しない接続パッドにボンディングワイヤ８の一方端が接続され、ボンディングワイヤ８の他方端が変換部１０に接続される。変換部１０は、接続用導波管６に他方端部６ｂで接続される。 One end of the bonding wire 8 is connected to a connection pad (not shown) of the transmission MMIC 3, and the other end of the bonding wire 8 is connected to the conversion unit 10. The converter 10 is connected to the connecting waveguide 6 at the other end 6b.
ボンディングワイヤ８と変換部１０とは、直接的に接続してもよいし、マイクロストリップ線路１２を介して接続してもよく、マイクロストリップ線路１２には、インピーダンス整合用のスタブ１２ａを設けることが好ましい。 The bonding wire 8 and the converter 10 may be directly connected or may be connected via the microstrip line 12, and the microstrip line 12 may be provided with a stub 12a for impedance matching. preferable.
接続用導波管６は、その略中央部分において、基板の裏面に設けられた送信ポートに接続する積層型導波管１３（以下では、送信用導波管という）とスロット１４を介して接続している。送信用導波管１３は、送信ポート１３ａを有し、アンテナ基板１００の送信用導波管１０１の一方端と接続される。送信用導波管１０１は、アンテナ基板１００を厚み方向に貫通する貫通孔による中空導波管で実現される。送信用導波管１０１の他方端は、アンテナ基板１００の裏面に解放される開口部であり、この開口がスロットアンテナとして開口寸法に応じた周波数の高周波を放射する。 The connection waveguide 6 is connected to a laminated waveguide 13 (hereinafter referred to as a transmission waveguide) connected to a transmission port provided on the back surface of the substrate through a slot 14 at a substantially central portion thereof. is doing. The transmission waveguide 13 has a transmission port 13 a and is connected to one end of the transmission waveguide 101 of the antenna substrate 100. The transmission waveguide 101 is realized by a hollow waveguide having a through hole penetrating the antenna substrate 100 in the thickness direction. The other end of the transmission waveguide 101 is an opening that is opened to the back surface of the antenna substrate 100, and this opening radiates a high frequency having a frequency corresponding to the opening size as a slot antenna.
したがって、送信用ＭＭＩＣ３から出力されて接続用導波管６を伝送した高周波信号は、その一部がスロット１４を介して送信用導波管１３を伝送し送信ポート１３ａに至る。送信ポート１３ａから出力された高周波信号は、アンテナ基板１００の送信用導波管１０１を伝送し、送信用導波管１０１のスロットアンテナから放射される。 Therefore, a part of the high-frequency signal output from the transmission MMIC 3 and transmitted through the connection waveguide 6 is transmitted through the transmission waveguide 13 via the slot 14 and reaches the transmission port 13a. The high-frequency signal output from the transmission port 13 a is transmitted through the transmission waveguide 101 of the antenna substrate 100 and is radiated from the slot antenna of the transmission waveguide 101.
また、送信用ＭＭＩＣ３から出力されて接続用導波管６を伝送した高周波信号の一部は、送信用導波管１３を伝送し、一部は、一方端部６ａを介して受信用ＭＭＩＣ２へと伝送される。 Further, a part of the high-frequency signal output from the transmission MMIC 3 and transmitted through the connection waveguide 6 is transmitted through the transmission waveguide 13, and a part is transmitted to the reception MMIC 2 via the one end 6a. Is transmitted.
受信用ＭＭＩＣ２は、接続用導波管６と接続するとともに、受信した高周波信号を伝送する積層型導波管（以下では、受信用導波管という）１５にも接続される。 The reception MMIC 2 is connected to the connection waveguide 6 and also to a laminated waveguide (hereinafter referred to as reception waveguide) 15 that transmits the received high-frequency signal.
受信用ＭＭＩＣ２と受信用導波管１５との接続は、接続用導波管６との接続と同様に、ボンディングワイヤ１６および変換部１７を介して接続される。 The connection between the reception MMIC 2 and the reception waveguide 15 is connected via the bonding wire 16 and the conversion unit 17 in the same manner as the connection with the connection waveguide 6.
受信用ＭＭＩＣ２の図示しない接続パッドにボンディングワイヤ１６の一方端が接続され、ボンディングワイヤ１６の他方端が変換部１７に接続される。変換部１７は、受信用導波管１５に一方端部１５ａで接続される。 One end of the bonding wire 16 is connected to a connection pad (not shown) of the receiving MMIC 2, and the other end of the bonding wire 16 is connected to the conversion unit 17. The converter 17 is connected to the receiving waveguide 15 at one end 15a.
ボンディングワイヤ１６と変換部１７とは、直接的に接続してもよいし、マイクロストリップ線路１８を介して接続してもよい。また、マイクロストリップ線路１８には、インピーダンス整合用のスタブ１８ａを設けることが好ましい。 The bonding wire 16 and the conversion unit 17 may be directly connected or may be connected via the microstrip line 18. The microstrip line 18 is preferably provided with a stub 18a for impedance matching.
受信用導波管１５は、受信ポート１５ｃを有し、アンテナ基板１００の受信用導波管１０２の一方端と接続される。受信用導波管１０２は、中空導波管で実現され、受信用導波管１０２の他方端は、アンテナ基板１００の裏面に解放される開口部である。この開口がスロットアンテナとして開口寸法に応じた周波数の高周波信号を受信する。 The reception waveguide 15 has a reception port 15 c and is connected to one end of the reception waveguide 102 of the antenna substrate 100. The reception waveguide 102 is realized by a hollow waveguide, and the other end of the reception waveguide 102 is an opening that is opened to the back surface of the antenna substrate 100. This opening serves as a slot antenna to receive a high-frequency signal having a frequency corresponding to the opening size.
したがって、受信用導波管１０２のスロットアンテナで受信した高周波信号は、アンテナ基板１００の受信用導波管１０２を伝送し、受信ポート１５ｃを介して受信用導波管１５を伝送する。受信用導波管１５を伝送した高周波信号は、変換部１７およびボンディングワイヤ１６を経て受信用ＭＭＩＣ２に入力される。 Therefore, the high-frequency signal received by the slot antenna of the reception waveguide 102 is transmitted through the reception waveguide 102 of the antenna substrate 100 and is transmitted through the reception waveguide 15 via the reception port 15c. The high-frequency signal transmitted through the reception waveguide 15 is input to the reception MMIC 2 through the conversion unit 17 and the bonding wire 16.
保護部材４，５を設ける目的は、外部からの不要電磁波が信号線路に結合して信号にノイズが混入することを防ぐとともに、外部へ電磁波を放射することにより、他の機器に悪影響を及ぼすことを防止するものである。保護部材４，５は、アルミニウムなどの金属からなる金属筐体によって形成するのが好ましい。保護部材４，５を金属筐体とすることによって、電磁波の遮蔽性が高く、放熱性がよくなる。また、金属筐体に限らず、樹脂筐体やセラミックス筐体の内面に金属めっきや金属メタライズを施したものでもよい。 The purpose of providing the protective members 4 and 5 is to prevent unwanted electromagnetic waves from being coupled to the signal line from being mixed into the signal line and to cause noise to be mixed into the signal. Is to prevent. The protective members 4 and 5 are preferably formed of a metal casing made of a metal such as aluminum. By making the protective members 4 and 5 metal casings, the shielding property of electromagnetic waves is high and the heat dissipation is improved. Moreover, not only a metal housing | casing but the thing which gave metal plating and metal metallization to the inner surface of a resin housing | casing or a ceramic housing | casing may be used.
本発明の高周波基板１は、ＭＭＩＣなどの高周波半導体デバイス同士の接続、および送受信用のアンテナ基板との接続において、積層型導波管線路および積層型導波管線路への変換部を用いている。これにより、基板表面に露出し、保護部材によって保護するべき箇所は、ＭＭＩＣ２，３、ボンディングワイヤ７，８，１６、変換部９，１０，１７、マイクロストリップ線路１１，１２，１８のみである。ＭＭＩＣ２，３同士の接続は、上記のように、基板に内層される積層型導波管線路である接続用導波管６によって成されるので、従来のような、ＭＭＩＣ２，３同士を接続する露出した平面線路が不要となっている。 The high-frequency substrate 1 of the present invention uses a laminated waveguide line and a conversion part to the laminated waveguide line for connection between high-frequency semiconductor devices such as MMICs and connection with an antenna substrate for transmission and reception. . As a result, only the MMICs 2, 3, bonding wires 7, 8, 16, conversion units 9, 10, 17, and microstrip lines 11, 12, 18 are exposed on the substrate surface and should be protected by the protective member. As described above, since the connection between the MMICs 2 and 3 is made by the connection waveguide 6 that is a laminated waveguide line that is layered on the substrate, the conventional MMICs 2 and 3 are connected to each other. An exposed planar track is not required.
また、本実施形態では、ＭＭＩＣと積層型導波管への変換部とは、ボンディングワイヤとマイクロストリップ線路を介して接続しているが、ボンディングワイヤやマイクロストリップ線路とは接続に必須の構成ではなく、たとえば、ＭＭＩＣの接続パッドから直接変換部にワイヤボンディングを施してもよい。また、ＭＭＩＣと変換部との接続をワイヤボンディングではなく、金属バンプやはんだボールなどによるフリップチップ接続であってもよい。 In this embodiment, the MMIC and the conversion unit to the laminated waveguide are connected via a bonding wire and a microstrip line. However, the bonding wire and the microstrip line are not essential for the connection. Alternatively, for example, wire bonding may be performed directly from the connection pad of the MMIC to the conversion unit. Further, the connection between the MMIC and the conversion unit may be flip-chip connection using metal bumps or solder balls instead of wire bonding.
このように、保護部材４，５は、半導体デバイスと変換部、およびこれらを接続する接続体とをその収容空間内に収めるようにすれば十分に保護機能を実現することができる。そして、これらを収容するための収容空間は、面積が、高周波基板１表面のうち、１つの半導体デバイスと、この１つの半導体デバイスに接続する変換部と、これらを接続するための接続体がと設けられた領域であり、高さが、保護部材の高さとなるような空間である。 As described above, the protection members 4 and 5 can sufficiently realize the protection function if the semiconductor device, the conversion portion, and the connection body connecting them are accommodated in the accommodation space. And the accommodation space for accommodating these has an area of one semiconductor device on the surface of the high-frequency substrate 1, a conversion unit connected to the one semiconductor device, and a connection body for connecting them. It is a provided area, and is a space whose height is the height of the protective member.
このような本実施形態によれば、従来のように、半導体デバイス同士を接続する平面線路が無いので、保護部材は、１つの収容空間内に２以上の半導体デバイスを収容する必要がなく、１つの収容空間につき、１つの半導体デバイスを収容することができる。 According to this embodiment, since there is no planar line for connecting semiconductor devices to each other as in the prior art, the protective member does not need to accommodate two or more semiconductor devices in one accommodation space. One semiconductor device can be accommodated per one accommodating space.
たとえば、本実施形態では、１つの保護部材４によって形成される収容空間内に、１つの受信用ＭＭＩＣ２と、変換部９，１７とを収容している。また、１つの保護部材５によって形成される収容空間には、送信用ＭＭＩＣ３と、変換部１０とを収容している。 For example, in the present embodiment, one reception MMIC 2 and conversion units 9 and 17 are accommodated in an accommodation space formed by one protection member 4. Further, in the accommodation space formed by one protective member 5, the transmission MMIC 3 and the conversion unit 10 are accommodated.
保護部材の収容空間内に、１つの半導体デバイスのみを収容できることから、保護部材の収容空間内における半導体デバイス間の信号の結合を防止することができる。本実施形態のように、受信用ＭＭＩＣ２と送信用ＭＭＩＣ３とが実装される送受信用の高周波基板では、特に送信用ＭＭＩＣ３から出力された信号による受信用ＭＭＩＣ２への影響が大きいので、これらの高周波デバイスを個別の保護部材により、異なる収容空間に収容することで、アイソレーション性の極めて高い高周波基板を実現することができる。 Since only one semiconductor device can be accommodated in the housing space for the protective member, signal coupling between the semiconductor devices in the housing space for the protective member can be prevented. In the high frequency board for transmission / reception on which the reception MMIC 2 and the transmission MMIC 3 are mounted as in the present embodiment, the signal output from the transmission MMIC 3 has a great influence on the reception MMIC 2. Is housed in different housing spaces by individual protective members, thereby realizing a high-frequency substrate with extremely high isolation.
さらに、保護部材の大きさ、すなわち保護部材の収容空間の体積を従来に比べて大幅に小さくすることができる。これにより、高周波デバイスから放射された電磁波の収容空間内における不要な共振の発生を防止することができる。 Furthermore, the size of the protection member, that is, the volume of the storage space of the protection member can be significantly reduced as compared with the conventional case. Thereby, generation | occurrence | production of the unnecessary resonance in the accommodation space of the electromagnetic waves radiated | emitted from the high frequency device can be prevented.
保護部材の収容空間内で生じる共振は、矩形共振器による共振と同様に考えることができる。不要な共振の発生を防止するためには、収容空間内部には１／４誘電体導波管共振器の共振モード（ＴＥ１０１モード）と類似したモードが発生するため、そのモードの最低次のモードの共振周波数を動作周波数範囲外に設定する。 Resonance that occurs in the space in which the protective member is accommodated can be considered in the same manner as resonance by a rectangular resonator. In order to prevent the occurrence of unnecessary resonance, a mode similar to the resonance mode (TE101 mode) of the quarter dielectric waveguide resonator is generated in the accommodating space, and therefore the lowest order mode of the mode. Is set outside the operating frequency range.
ＴＥ１０１モードに類似したモードの最低次のモードの共振周波数は式（１）で与えられる。 The resonance frequency of the lowest order mode of the mode similar to the TE101 mode is given by Equation (1).
ここで、ｆは共振周波数（ＧＨｚ）を示し、ａは矩形共振器の長手方向の寸法（ｍｍ）を示し、ｃは矩形共振器の高さ方向の寸法（ｍｍ）を示し、εｒは、共振器内の誘電体の比誘電率を示す。 Here, f represents the resonance frequency (GHz), a represents the longitudinal dimension (mm) of the rectangular resonator, c represents the height dimension (mm) of the rectangular resonator, and εr represents the resonance The relative dielectric constant of the dielectric in the vessel is shown.
式（１）からわかるように、長手方向のサイズａおよび高さ方向のサイズｃが小さければ小さいほど共振周波数は高くなる。 As can be seen from equation (1), the smaller the size a in the longitudinal direction and the size c in the height direction, the higher the resonance frequency.
矩形共振器のサイズは、すなわち保護部材の収容空間の大きさと同じと考えられるので、保護部材の収容空間が小さくすることで、共振周波数を、使用動作周波数の最大周波数よりも高い周波数側に設定することもできる。 Since the size of the rectangular resonator is considered to be the same as the size of the housing space for the protective member, the resonant frequency is set higher than the maximum operating frequency by reducing the housing space for the protective member. You can also
保護部材４，５を小さくするために、変換部９，１０は、全てを収容空間内に収める必要はなく、変換部９，１０上に接触するように保護部材４，５を設けることも可能である。 In order to make the protective members 4 and 5 small, the conversion parts 9 and 10 do not have to be accommodated in the accommodation space, and the protective members 4 and 5 can be provided so as to contact the conversion parts 9 and 10. It is.
これにより、保護部材４，５の収容空間を小さくするとともに、変換部９，１０と保護部材４，５との間での熱移動を容易にし、ＭＭＩＣ２，３の冷却効率を向上させることができる。ＭＭＩＣ２，３で発生した熱は、実装される基板の誘電体層への移動、ボンディングワイヤを介した伝送線路への移動、空気中への放散により冷却される。ボンディングワイヤを介した伝送線路への移動において、変換部９，１０が保護部材４，５と接触することで、保護部材４，５への熱移動が生じ、保護部材４，５から空気中へ熱が放散される。 Thereby, while the accommodation space of the protection members 4 and 5 can be made small, the heat transfer between the conversion parts 9 and 10 and the protection members 4 and 5 can be facilitated, and the cooling efficiency of the MMICs 2 and 3 can be improved. . The heat generated by the MMICs 2 and 3 is cooled by the movement of the substrate to be mounted to the dielectric layer, the movement to the transmission line via the bonding wire, and the diffusion into the air. In the movement to the transmission line through the bonding wire, the conversion portions 9 and 10 come into contact with the protection members 4 and 5, so that heat transfer to the protection members 4 and 5 occurs, and the protection members 4 and 5 enter the air. Heat is dissipated.
以上のように、本発明の高周波基板１は、保護部材４，５により外部からの不要電磁波によるノイズが混入を防ぐとともに、外部への電磁波放射による他の機器への悪影響を防ぐという従来の効果に加えて、同じ基板上に実装されている半導体デバイス同士のアイソレーション性を極めて高くすることができるという効果を発揮する。 As described above, the high-frequency substrate 1 according to the present invention has the conventional effect that the protective members 4 and 5 prevent noise caused by unnecessary electromagnetic waves from the outside, and prevent adverse effects on other devices due to external electromagnetic radiation. In addition, it is possible to achieve extremely high isolation between semiconductor devices mounted on the same substrate.
また、上記のような高周波基板１を用いることで、特に送信用ＭＭＩＣと受信用ＭＭＩＣとを実装した送受信用の高周波モジュールにおいて、ＭＭＩＣ同士のアイソレーション特性を高めて、高品質な送受信特性を実現することができる。 Further, by using the high-frequency substrate 1 as described above, particularly in a high-frequency module for transmission / reception in which a transmission MMIC and a reception MMIC are mounted, the isolation characteristics between the MMICs are enhanced, and high-quality transmission / reception characteristics are realized. can do.
ここで、積層型導波管線路およびその変換部について説明する。本発明では、積層型導波管路を用いてＭＭＩＣ２，３同士を接続することにより、半導体デバイス同士の接続配線に対しても、外部からのノイズ混入を防ぐとともに、外部への電磁波放射による他の機器への悪影響を防ぎ、さらに半導体デバイス同士のアイソレーション性を極めて高くすることができる。 Here, the laminated waveguide line and its conversion unit will be described. In the present invention, by connecting the MMICs 2 and 3 using the laminated waveguide, it is possible to prevent external noise from being mixed into the connection wiring between the semiconductor devices, and to prevent other radiation caused by electromagnetic radiation to the outside. The adverse effect on the equipment can be prevented, and the isolation between the semiconductor devices can be made extremely high.
以下、高周波基板１に設けられる複数の変換部のうち、変換部１０について説明するが、他の変換部９，１７も同様に構成することができる。 Hereinafter, although the conversion part 10 is demonstrated among the some conversion parts provided in the high frequency board | substrate 1, the other conversion parts 9 and 17 can also be comprised similarly.
図３は、変換部１０の構成を説明するための図である。図３（ａ）は、変換部１０の平面図であり、図３（ｂ）は、マイクロストリップ線路１２と接続用導波管６との接続部分の断面図である。 FIG. 3 is a diagram for explaining the configuration of the conversion unit 10. FIG. 3A is a plan view of the conversion unit 10, and FIG. 3B is a cross-sectional view of a connection portion between the microstrip line 12 and the connection waveguide 6.
高周波基板１は、複数の誘電体層が積層され、これらの誘電体層間に導体層が設けられ内層配線が形成される。たとえば、本実施形態では、複数の誘電体層３１，３２，３３，３４が、高周波基板１のＭＭＩＣが実装された表面側からこの順に積層され、誘電体層のうち、基板表面を含む誘電体層３１上に形成されるマイクロストリップ線路１２と、上側の複数の誘電体層（本実施形態では誘電体層３１，３２）を含んで形成され、マイクロストリップ線路１２と変換部１０を介して接続する第１の積層型導波管副線路部２１と、上側の誘電体層の一部（本実施形態では誘電体層３２，３３）を含んで形成され、第１の積層型導波管副線路部２１と接続する第２の積層型導波管副線路部２２と、下側の複数の誘電体層（本実施形態では誘電体層３２，３３，３４）を含んで形成され、第２の積層型導波管副線路部２２と接続する積層型導波管主線路部２３とが形成される。 In the high-frequency substrate 1, a plurality of dielectric layers are laminated, and a conductor layer is provided between these dielectric layers to form an inner layer wiring. For example, in the present embodiment, a plurality of dielectric layers 31, 32, 33, and 34 are stacked in this order from the surface side on which the MMIC of the high-frequency substrate 1 is mounted, and among the dielectric layers, a dielectric that includes the substrate surface The microstrip line 12 formed on the layer 31 and a plurality of upper dielectric layers (dielectric layers 31 and 32 in the present embodiment) are formed and connected via the microstrip line 12 and the converter 10. The first laminated waveguide sub-line portion 21 and a part of the upper dielectric layer (dielectric layers 32 and 33 in this embodiment) are formed, and the first laminated waveguide sub-line portion 21 is formed. A second laminated waveguide sub-line portion 22 connected to the line portion 21 and a plurality of lower dielectric layers (dielectric layers 32, 33, 34 in the present embodiment) are formed to form a second The laminated waveguide main line portion 2 connected to the laminated waveguide sub-line portion 22 Door is formed.
マイクロストリップ線路１２は、誘電体層３１を厚み方向に挟んで対向するストリップ導体１２ｂとグランド（接地）導体１２ｃとで構成されている。 The microstrip line 12 includes a strip conductor 12b and a ground (ground) conductor 12c that are opposed to each other with the dielectric layer 31 interposed therebetween in the thickness direction.
マイクロストリップ線路１２と接続用導波管６との接続部分を構成し、高周波基板１の表面に設けられる変換部１０は、第１の積層型導波管副線路部２１、第２の積層型導波管副線路部２２、積層型導波管主線路部２３のそれぞれの主導体層のうち、高周波基板１の表面に設けられる上側主導体層２１１，２２１，２３１で構成され、これら上側主導体層２１１，２２１，２３１が一体的に形成されたものである。 The conversion section 10 that constitutes a connection portion between the microstrip line 12 and the connection waveguide 6 and is provided on the surface of the high-frequency substrate 1 includes a first laminated waveguide subline section 21 and a second laminated type. Of the main conductor layers of the waveguide sub-line portion 22 and the laminated waveguide main line portion 23, the upper main conductor layers 211, 211, and 231 provided on the surface of the high-frequency substrate 1 are formed. The body layers 211, 221, and 231 are integrally formed.
変換部１０の信号伝送方向に対する幅方向寸法Ｗは、主導体層の幅方向寸法と同一であり、伝送信号の周波数などによって適宜設定すればよく、また、幅寸法は伝送させる高周波信号の遮断周波数を考慮して設定される。たとえば、伝送信号の周波数が７６．５ＧＨｚのときはＷ＝１．１５ｍｍであり、遮断周波数は約４３ＧＨｚで設定される。 The width direction dimension W with respect to the signal transmission direction of the conversion unit 10 is the same as the width direction dimension of the main conductor layer, and may be set as appropriate depending on the frequency of the transmission signal. The width dimension is the cutoff frequency of the high-frequency signal to be transmitted. Is set in consideration of For example, when the frequency of the transmission signal is 76.5 GHz, W = 1.15 mm, and the cutoff frequency is set at about 43 GHz.
また、下側主導体層２１２，２２２，２３２の信号伝送方向端部は、伝送信号の波長λの１／４ずつ信号伝送方向にずれて設けられる。変換部１０の信号伝送方向に平行な長さ方向寸法Ｌは、平面視したときに下側主導体層２１２，２２２，２３２を覆うように３λ／４に設定される。たとえば、伝送信号の周波数が７０〜８５ＧＨｚのときはＬ＝０．９ｍｍである。 Also, the signal transmission direction ends of the lower main conductor layers 212, 222, and 232 are provided by being shifted in the signal transmission direction by ¼ of the wavelength λ of the transmission signal. The length direction dimension L parallel to the signal transmission direction of the conversion unit 10 is set to 3λ / 4 so as to cover the lower main conductor layers 212, 222, and 232 in plan view. For example, L = 0.9 mm when the frequency of the transmission signal is 70 to 85 GHz.
なお、変換部１０の上記幅方向寸法Ｗおよび長さ方向寸法Ｌは、変換部として最小限必要な寸法であって、変換部１０は、幅方向寸法が両側に大きくなるように形成されてもよく、長さ方向寸法がストリップ導体１２ａとの接続部分とは反対側に向かって延びるように形成されてもよい。 Note that the width direction dimension W and the length direction dimension L of the conversion unit 10 are the minimum necessary dimensions as the conversion unit, and the conversion unit 10 may be formed so that the width direction dimension is increased on both sides. Alternatively, the length dimension may be formed so as to extend toward the side opposite to the connection portion with the strip conductor 12a.
積層型導波管線路は、上記のような一対の導体層（上側主導体層および下側主導体層）とともにビアホール導体群４１，４２を含んで構成される。 The laminated waveguide line includes via hole conductor groups 41 and 42 together with the pair of conductor layers (upper main conductor layer and lower main conductor layer) as described above.
ビアホール導体群４１，４２は、積層型導波管を伝送する伝送信号の遮断波長以下の間隔で信号伝送方向に沿って配列し、積層型導波管線路における電気的な側壁を形成し、この側壁と一対の導体層によって導波管が構成される。 The via-hole conductor groups 41 and 42 are arranged along the signal transmission direction at intervals equal to or smaller than the cutoff wavelength of the transmission signal transmitted through the laminated waveguide, and form electrical sidewalls in the laminated waveguide line. A waveguide is constituted by the side wall and the pair of conductor layers.
側壁形成用のビアホール導体群４１，４２において、隣り合うビアホール導体の間隔が伝送する信号の遮断波長よりも大きいと、この積層型導波管線路に給電された電磁波はビアホール導体とビアホール導体との隙間から漏れてしまい、側壁と一対の主導体層によって形成される疑似的な導波管に沿って伝播しなくなってしまう。これに対し、側壁形成用ビアホール導体群４１、４２において、隣り合うビアホール導体の間隔が遮断波長以下であると、電磁波はビアホール導体とビアホール導体との隙間から漏れることなく反射しながら積層型導波管線路の信号伝送方向に伝播される。 In the via-hole conductor groups 41 and 42 for forming the side walls, when the interval between adjacent via-hole conductors is larger than the cutoff wavelength of the signal to be transmitted, the electromagnetic wave fed to the laminated waveguide is caused by the via-hole conductor and the via-hole conductor. It leaks from the gap and does not propagate along the pseudo waveguide formed by the side wall and the pair of main conductor layers. On the other hand, in the side wall forming via hole conductor groups 41 and 42, when the interval between adjacent via hole conductors is equal to or less than the cutoff wavelength, the electromagnetic wave is reflected without leaking from the gap between the via hole conductor and the laminated waveguide. Propagated in the signal transmission direction of the pipe line.
なお、側壁形成用ビアホール導体群４１，４２を構成するビアホール導体は、隣り合うビアホール導体の間隔が、一定間隔に設けられることが好ましいが、少なくとも伝送する信号の遮断波長以下の間隔であれば良く、その範囲内で適宜設定することができる。 In the via hole conductors constituting the side wall forming via hole conductor groups 41 and 42, it is preferable that the interval between adjacent via hole conductors is set at a constant interval. , Can be set as appropriate within the range.
また、積層型導波管線路２を形成する２列の側壁形成用ビアホール導体群４１，４２の外側にさらに側壁形成用ビアホール導体群を設けて、側壁形成用ビアホール導体群による疑似的な側壁を、伝送方向に対する幅方向に２重、３重に形成することにより、電磁波の漏れをより効果的に防止することができる。 Further, a side wall forming via hole conductor group is provided outside the two rows of side wall forming via hole conductor groups 41 and 42 forming the laminated waveguide line 2, and a pseudo side wall by the side wall forming via hole conductor group is provided. By forming double or triple in the width direction with respect to the transmission direction, leakage of electromagnetic waves can be more effectively prevented.
図４を参照して誘電体層毎に具体的に説明する。図４（ａ）〜図４（ｄ）は、誘電体層３１，３２，３３，３４を層ごとに展開し、高周波基板１の一表面側から見た平面図である。図４（ｅ）は、誘電体層３４を他表面側から見た平面図である。 With reference to FIG. 4, it demonstrates concretely for every dielectric material layer. 4A to 4D are plan views of the dielectric layers 31, 32, 33, and 34 developed for each layer and viewed from one surface side of the high-frequency substrate 1. FIG. 4E is a plan view of the dielectric layer 34 as seen from the other surface side.
図４（ａ）に示すように、誘電体層３１の表面には、ストリップ導体１２と、これに接続される上側主導体層２１１，２２１，２３１（変換部１３）が形成される。変換部１３を主導体層とする積層型導波管から接続用導波管６へと接続する構造においては、両者の積層型導波管に共有される共有線路部を介して接続される。共有線路部の上側主導体層５１は、一端が上側主導体層２３１の端部に接続して形成される。また、誘電体層３１の内部には、２列の側壁形成用ビアホール導体群４１、４２が形成される。 As shown in FIG. 4A, on the surface of the dielectric layer 31, the strip conductor 12 and the upper main conductor layers 211, 221, 231 (conversion unit 13) connected thereto are formed. In the structure in which the conversion portion 13 is connected to the connection waveguide 6 from the laminated waveguide having the main conductor layer, the conversion portion 13 is connected via a shared line portion shared by both the laminated waveguides. The upper main conductor layer 51 of the shared line portion is formed with one end connected to the end of the upper main conductor layer 231. In addition, two rows of side wall forming via-hole conductor groups 41 and 42 are formed inside the dielectric layer 31.
さらに、共有線路部の他端に近接する部位と接続用導波管６の端部とは上から見て重なっていて、図４（ａ）には、この共有線路部の上側主導体層５１の他端に近接する部位と接続用導波管６の上側主導体層６１の端部とを電気的に接続する５本のビアホール導体からなる境界壁形成用ビアホール導体群４３が、信号伝送方向とは垂直な方向に伝送信号の遮断波長以下の間隔で誘電体層３１内部に配列され、この境界からの高周波信号の漏れを防止する。なお、境界壁形成用ビアホール導体群４３における両端の２本のビアホール導体は、側壁形成用ビアホール導体群４１，４２と共有される。 Further, the portion close to the other end of the shared line portion and the end portion of the connecting waveguide 6 overlap each other when viewed from above, and FIG. 4A shows the upper main conductor layer 51 of the shared line portion. A boundary wall forming via-hole conductor group 43 including five via-hole conductors that electrically connect a portion in the vicinity of the other end of the connector and the end of the upper main conductor layer 61 of the connecting waveguide 6 is provided in the signal transmission direction. Are arranged in the dielectric layer 31 in the vertical direction at intervals equal to or smaller than the cutoff wavelength of the transmission signal, and prevent leakage of high-frequency signals from this boundary. The two via hole conductors at both ends of the boundary wall forming via hole conductor group 43 are shared with the side wall forming via hole conductor groups 41 and 42.
図４（ｂ）に示すように、誘電体層３２の表面には、マイクロストリップ線路１２を構成するグランド導体１２ｃ、副導体層５３、接続用導波管６を構成する上側主導体層６１が一体的に形成される。また、誘電体層３２の内部には、２列の側壁形成用ビアホール導体群４１，４２が形成される。この側壁形成用ビアホール導体群４１，４２は、それぞれ８本のビアホール導体で構成されている。 As shown in FIG. 4B, on the surface of the dielectric layer 32, the ground conductor 12 c constituting the microstrip line 12, the sub conductor layer 53, and the upper main conductor layer 61 constituting the connection waveguide 6 are formed. It is formed integrally. In addition, two rows of side wall forming via-hole conductor groups 41 and 42 are formed inside the dielectric layer 32. Each of the side wall forming via hole conductor groups 41 and 42 includes eight via hole conductors.
図４（ｃ）に示すように、誘電体層３３の表面には、下側主導体層２２２、副導体層５４、接続用導波管６を構成する副導体層５５が電気的に接続されて一体的に形成されている。また、誘電体層３３の内部には、２列の側壁形成用ビアホール導体群４１，４２が形成される。この側壁形成用ビアホール導体群４１、４２は、それぞれ８本ずつのビアホール導体で構成されている。 As shown in FIG. 4C, the lower main conductor layer 222, the sub conductor layer 54, and the sub conductor layer 55 constituting the connection waveguide 6 are electrically connected to the surface of the dielectric layer 33. Are integrally formed. In addition, two rows of side wall forming via-hole conductor groups 41 and 42 are formed inside the dielectric layer 33. Each of the side wall forming via hole conductor groups 41 and 42 includes eight via hole conductors.
図４（ｄ）に示すように、誘電体層３４の表面には、下側主導体層２３２、接続用導波管６を構成する副導体層５６が形成される。また、誘電体層３４の内部には、２列の側壁形成用ビアホール導体群４１，４２が形成される。誘電体層３４の内部に形成された側壁形成用ビアホール導体群４１、４２は、それぞれ５本のビアホール導体で構成されている。 As shown in FIG. 4D, the lower main conductor layer 232 and the sub conductor layer 56 constituting the connection waveguide 6 are formed on the surface of the dielectric layer 34. In addition, two rows of side wall forming via-hole conductor groups 41 and 42 are formed inside the dielectric layer 34. The side wall forming via-hole conductor groups 41 and 42 formed inside the dielectric layer 34 are each composed of five via-hole conductors.
さらに、変換部１３を備える積層型導波管の端部と共有線路部の一端に近接する部位とは上から見て重なっていて、下側主導体層２３２端部と共有線路部の下側主導体層５２とを電気的に接続するビアホール導体からなる境界壁形成用ビアホール導体群が、信号伝送方向とは垂直な方向に信号の遮断波長以下の間隔で配列され、この境界からの高周波信号の漏れを防止するように境界壁を形成している。なお、このビアホール導体群の配列における両端の２本のビアホール導体は、側壁形成用ビアホール導体群４１，４２と共有している。 Further, the end portion of the laminated waveguide provided with the conversion portion 13 and the portion close to one end of the shared line portion overlap each other when viewed from above, and the lower main conductor layer 232 end portion and the lower side of the shared line portion A boundary wall forming via-hole conductor group composed of via-hole conductors that electrically connect the main conductor layer 52 is arranged in a direction perpendicular to the signal transmission direction at intervals equal to or smaller than the signal cutoff wavelength, and a high-frequency signal from this boundary A boundary wall is formed so as to prevent leakage. The two via-hole conductors at both ends in the arrangement of the via-hole conductor groups are shared with the via-hole conductor groups 41 and 42 for forming the side walls.
図４（ｅ）に示すように、誘電体層３４の裏面には、接続用導波管６を構成する下側主導体層６２が形成される。なお、図４（ｅ）には示していないが、共有線路部を構成する下側主導体層５２の一端に近接する部位には、図４（ｄ）に示す境界壁形成用ビアホール導体群４３が接続されている。また、接続用導波管６を構成する下側主導体層６２には、図４（ｄ）に示す側壁形成用ビアホール導体群４１、４２が接続されている。 As shown in FIG. 4E, a lower main conductor layer 62 constituting the connection waveguide 6 is formed on the back surface of the dielectric layer 34. Although not shown in FIG. 4 (e), a boundary wall forming via-hole conductor group 43 shown in FIG. 4 (d) is provided at a position close to one end of the lower main conductor layer 52 constituting the shared line portion. Is connected. Also, sidewall forming via-hole conductor groups 41 and 42 shown in FIG. 4D are connected to the lower main conductor layer 62 constituting the connecting waveguide 6.
積層型導波管を構成する誘電体層が複数層からなる場合は、誘電体層間に主導体層と平行に副導体層を設けることが好ましい。副導体層は、同じ列に属し、同じ誘電体層を貫通する各ビアホール導体群を、列ごとにそれぞれ個別に電気的に接続し、ビアホール導体群の配列方向に延びる帯状の導体層である。 When the dielectric layer constituting the laminated waveguide is composed of a plurality of layers, it is preferable to provide a sub conductor layer between the dielectric layers in parallel with the main conductor layer. The sub conductor layer is a strip-like conductor layer that belongs to the same row and electrically connects each via-hole conductor group penetrating the same dielectric layer for each row and extends in the arrangement direction of the via-hole conductor group.
このような副導体層は、図４における導体層５３，５４，５５が、これに相当し、ビアホール導体群と副導体層とによって、格子状に形成された側壁が得られ、様々な方向の電磁波漏れを遮蔽することができる。また、副導体層は、ビアホール導体の大きなランドとしても機能し、積層ずれによって生じるビアホール導体の厚み方向の接続不良を抑制することができる。ビアホール導体の厚み方向の接続不良が生じると、接続不良部分で電磁波の漏れが発生しやすくなり、伝送損失が大きくなってしまうが、副導体層を設けることでこれを防止することができる。 Such sub-conductor layers correspond to the conductor layers 53, 54, and 55 in FIG. 4, and side walls formed in a lattice shape are obtained by the via-hole conductor group and the sub-conductor layer, and various directions are obtained. Electromagnetic leakage can be shielded. Further, the sub conductor layer also functions as a large land of the via hole conductor, and can suppress poor connection in the thickness direction of the via hole conductor caused by the stacking deviation. If a poor connection in the thickness direction of the via-hole conductor occurs, electromagnetic leakage is likely to occur at the poor connection portion and transmission loss increases. However, this can be prevented by providing a sub-conductor layer.
さらに、複数のＭＭＩＣを互いに接続するような場合、接続用導波管６の構造が直線構造だけではなく、本実施形態のように、湾曲構造の線路部分を設ける場合がある。高周波信号の伝搬においては湾曲構造で放射が起こるが、副導体層を設けることで、電磁遮蔽の役目を担うため、湾曲構造での放射を抑え低損失な伝送線路を実現することができる。 Further, when a plurality of MMICs are connected to each other, the structure of the connecting waveguide 6 is not limited to a linear structure, and a curved line portion may be provided as in this embodiment. In the propagation of high-frequency signals, radiation occurs in a curved structure, but by providing a sub-conductor layer, it plays a role of electromagnetic shielding, so that a transmission line with low loss can be realized by suppressing radiation in the curved structure.
本発明では、このような高周波基板１に内層される積層型導波管を用いて、接続用導波管６による半導体デバイス同士の接続、送信用導波管１３による送信用アンテナとの接続、受信用導波管１５による受信用アンテナとの接続を実現している。 In the present invention, using such a laminated waveguide that is layered on the high-frequency substrate 1, the connection between the semiconductor devices by the connection waveguide 6, the connection with the transmission antenna by the transmission waveguide 13, Connection with the receiving antenna by the receiving waveguide 15 is realized.
したがって、これらの接続に必要な伝送線路は、全て基板内に設けられ、外部からのノイズ混入を防ぐとともに、外部への電磁波放射による他の機器への悪影響を防ぐことができる。さらに、基板の内部においては、積層型導波管同士での結合が生じることはないので、伝送線路同士の結合によるクロストークノイズの混入なども発生しない。特に送信用ＭＭＩＣ３から出力された信号による受信用ＭＭＩＣ２への影響が大きいので、積層型導波管を用いることで、アイソレーション性の極めて高い高周波基板を実現することができる。 Therefore, all the transmission lines necessary for these connections are provided in the substrate, so that external noise can be prevented from entering and other devices due to electromagnetic radiation to the outside can be prevented from being adversely affected. Further, since there is no coupling between the laminated waveguides inside the substrate, mixing of crosstalk noise due to coupling between the transmission lines does not occur. In particular, since the signal output from the transmission MMIC 3 has a great influence on the reception MMIC 2, a high-frequency substrate with extremely high isolation can be realized by using a laminated waveguide.
さらに、同じ積層型導波管を用いる構成のうち、従来のような変換部に同軸構造を用いる場合は、課題の欄でも述べたように、伝送信号が接続プローブの長さによって共振するため、反射特性において、この共振による共振周波数で極を持つ特性になる。また、同軸構造では、中心導体に電流密度が集中するため、伝送損失が大きくなり、多層基板内での積層型導波管の伝送モードであるＴＥ１０モードへの変換構造が必要となり、この変換構造を設ける分の厚みが基板に必要になる。 Furthermore, among the configurations using the same laminated waveguide, when a coaxial structure is used for a conventional conversion unit, as described in the problem section, the transmission signal resonates depending on the length of the connection probe. The reflection characteristic has a pole at the resonance frequency due to this resonance. Further, in the coaxial structure, the current density is concentrated on the central conductor, so that the transmission loss increases, and a conversion structure to the TE10 mode which is the transmission mode of the laminated waveguide in the multilayer substrate is required. The substrate needs to be thick enough to provide the thickness.
これに対して、本発明の変換部は、共振が生じるような構造を持たないため、信号伝送特性における周波数応答がよく、たとえば、周波数が１０ＧＨｚ以上において、−１５ｄＢ以上の反射特性を実現できる。また、電流密度の集中も生じないので、伝送損失を小さく抑えることができ、同軸構造を用いた構成に対して基板の厚みを薄くでき、小型、安価を実現することができ、さらに低損失、広帯域な構造であるため高感度な高周波モジュールが実現できる。 On the other hand, since the converter of the present invention does not have a structure that causes resonance, the frequency response in the signal transmission characteristics is good. For example, a reflection characteristic of −15 dB or more can be realized at a frequency of 10 GHz or more. In addition, since the concentration of current density does not occur, the transmission loss can be kept small, the thickness of the substrate can be reduced compared to the configuration using the coaxial structure, the small size and the low cost can be realized, and the low loss, A high-sensitivity high-frequency module can be realized because of the wide-band structure.
ＭＭＩＣ２，３への駆動用のバイアス電圧は、以下のようにして供給する。 The bias voltage for driving to the MMICs 2 and 3 is supplied as follows.
ＭＭＩＣの接続パッドと、基板表面に設けられたバイアス供給用パッドとをワイヤボンディング接続またはフリップチップ接続により接続し、バイアス供給用パッドと、基板表面に設けられた外部接続用パッドとを、基板に内層されるバイアス供給用配線で接続する。外部接続用パッドにバイアス電圧供給源を接続することで、ＭＭＩＣに対して駆動用のバイアス電圧を供給することができる。 The MMIC connection pad and the bias supply pad provided on the substrate surface are connected by wire bonding connection or flip chip connection, and the bias supply pad and the external connection pad provided on the substrate surface are connected to the substrate. They are connected by a bias supply wiring which is an inner layer. A bias voltage for driving can be supplied to the MMIC by connecting a bias voltage supply source to the external connection pad.
本実施形態では、受信用ＭＭＩＣ２の接続パッドと、基板表面に設けられたバイアス供給用パッド５０とをボンディングワイヤ５１により接続し、バイアス供給用パッド５０と、基板表面に設けられた外部接続用パッド５２とを、基板に内層されるバイアス供給用配線５３で接続する。また、送信用ＭＭＩＣ３の接続パッドと、基板表面に設けられたバイアス供給用パッド６０とをボンディングワイヤ６１により接続し、バイアス供給用パッド６０と、基板表面に設けられた外部接続用パッド６２とを、基板に内層されるバイアス供給用配線６３で接続する。 In this embodiment, the connection pad of the receiving MMIC 2 and the bias supply pad 50 provided on the substrate surface are connected by the bonding wire 51, and the bias supply pad 50 and the external connection pad provided on the substrate surface are connected. 52 is connected by a bias supply wiring 53 which is an inner layer of the substrate. Further, the connection pad of the transmitting MMIC 3 and the bias supply pad 60 provided on the substrate surface are connected by the bonding wire 61, and the bias supply pad 60 and the external connection pad 62 provided on the substrate surface are connected. The connection is made by a bias supply wiring 63 which is formed on the substrate.
上記のような構成を有する高周波基板の誘電体層としては、高周波信号の伝送を妨げることがない特性を有するものであればとりわけ限定するものではないが、伝送線路を形成する際の精度および製造の容易性の点からセラミックスからなることが望ましい。 The dielectric layer of the high-frequency substrate having the above-described configuration is not particularly limited as long as it has characteristics that do not hinder the transmission of high-frequency signals. From the viewpoint of easiness, it is desirable to be made of ceramics.
たとえば、ガラスセラミックス、アルミナ質セラミックスや窒化アルミニウム質セラミックス等のセラミック原料粉末に適当な有機溶剤・溶媒を添加混合して泥漿状になすとともにこれを従来周知のドクターブレード法やカレンダーロール法等を採用してシート状となすことによって複数枚のセラミックグリーンシートを得、しかる後、これらセラミックグリーンシートの各々に適当な打ち抜き加工を施すとともに、導体ペーストをビアホールへ充填し、配線パターン、ベタパターンを印刷したものを積層し、ガラスセラミックスの場合は８５０〜１０００℃、アルミナ質セラミックスの場合は１５００〜１７００℃、窒化アルミニウム質セラミックスの場合は１６００〜１９００℃の温度で焼成することによって製作される。 For example, an appropriate organic solvent or solvent is added to and mixed with ceramic raw material powders such as glass ceramics, alumina ceramics, and aluminum nitride ceramics to form a mud and adopts the conventionally known doctor blade method, calendar roll method, etc. In this way, a plurality of ceramic green sheets are obtained by forming into a sheet shape, and after that, each of these ceramic green sheets is appropriately punched and filled with a conductor paste into a via hole, and a wiring pattern and a solid pattern are printed. These are laminated and fired at a temperature of 850 to 1000 ° C. for glass ceramics, 1500 to 1700 ° C. for alumina ceramics, and 1600 to 1900 ° C. for aluminum nitride ceramics.
また、ストリップ導体、グランド導体および一対の導体層などの金属導体層としては、たとえば誘電体層がアルミナ質セラミックスからなる場合には、タングステン・モリブデンなどの金属粉末に適当なアルミナ・シリカ・マグネシア等の酸化物や有機溶剤・溶媒等を添加混合した導体ペーストを厚膜印刷法によりセラミックグリーンシート上に印刷し、しかる後、約１６００℃の高温で同時焼成し、厚み１０〜１５μｍ以上となるようにして形成する。なお、金属粉末としては、ガラスセラミックスの場合は銅・金・銀が、アルミナ質セラミックス、窒化アルミニウム質セラミックスの場合はタングステン・モリブデンが好適である。また、主導体層の厚みは一般的に５〜５０μｍ程度とされる。 In addition, as a metal conductor layer such as a strip conductor, a ground conductor, and a pair of conductor layers, for example, when the dielectric layer is made of an alumina ceramic, alumina, silica, magnesia, etc. suitable for metal powder such as tungsten, molybdenum, etc. A conductor paste added with an oxide, an organic solvent, a solvent, etc. is printed on a ceramic green sheet by a thick film printing method, and then co-fired at a high temperature of about 1600 ° C. so that the thickness becomes 10 to 15 μm or more. To form. As the metal powder, copper, gold and silver are suitable for glass ceramics, and tungsten and molybdenum are suitable for alumina ceramics and aluminum nitride ceramics. The thickness of the main conductor layer is generally about 5 to 50 μm.
配線基板の誘電体層としては、上記のようなセラミックスからなることが好ましいが、伝送信号の周波数や製造コストなどの観点から、樹脂材料を用いることもできる。誘電体層として使用可能な樹脂材料としては、たとえば、ＰＴＥＴ、液晶ポリマー、ＦＲ４、フッ素樹脂、フッ素ガラス樹脂などが挙げられる。この場合の金属導体としては、たとえば銅箔の貼り付け、銅めっき膜をエッチングなどによりパターン形成したものを使用することができる。 The dielectric layer of the wiring board is preferably made of the ceramics as described above, but a resin material can also be used from the viewpoint of the frequency of the transmission signal and the manufacturing cost. Examples of the resin material that can be used as the dielectric layer include PET, liquid crystal polymer, FR4, fluorine resin, and fluorine glass resin. As the metal conductor in this case, for example, a copper foil attached or a copper plating film patterned by etching or the like can be used.
１ 高周波基板
２ 受信用ＭＭＩＣ
３ 送信用ＭＭＩＣ
４，５ 保護部材
６ 接続用導波管
７，８ ボンディングワイヤ
９，１０ 変換部
１３ 送信用導波管
１５ 受信用導波管
1 High-frequency substrate 2 Receiving MMIC
3 MMIC for transmission
4, 5 Protective member 6 Connection waveguide 7, 8 Bonding wire 9, 10 Converter 13 Transmission waveguide 15 Reception waveguide
Claims (8)
副線路部と主線路部と変換部とを有する積層型導波管であって、
前記副線路部は、前記誘電体層と、前記誘電体層を挟んで対向する副線路部上側主導体層及び副線路部下側主導体層と、この一対の副線路部上側及び下側主導体層を厚み方向に電気的に接続するように信号伝達方向に遮断波長以下の間隔で形成された二列のビアホール導体群と、を含み、
前記主線路部は、前記副線路部に接続され、前記副線路部の誘電体層よりも厚い誘電体層と、この誘電体層を挟んで対向する主線路部上側主導体層及び主線路部下側主導体層と、この一対の主線路部上側及び下側主導体層を厚み方向に電気的に接続するように信号伝達方向に遮断波長以下の間隔で形成された二列のビアホール導体群と、を含み、
前記変換部は、前記副線路部及び前記主線路部の前記上側主導体層が一体的に形成されて成る、
積層型導波管と、
前記積層型導波管に接続され、前記高周波素子同士を接続する接続用積層型導波管であって、
前記誘電体層を挟む一対の主導体層と、信号伝達方向に遮断波長以下の間隔で前記主導体層間を電気的に接続するように形成された二列のビアホール導体群とを備え、前記主導体層および前記ビアホール導体群に囲まれた領域によって高周波信号を伝達し、前記一対の主導体層のうち上側主導体層は、前記変換部より下側に位置し、前記一対の主導体層のうち下側主導体層は、前記副線路部下側主導体層よりも下側に位置する、前記高周波基板に内層される接続用積層型導波管と、
前記主線路部上側主導体層に接続されて形成される上側共有線路主導体層と、前記接続用導波管線路の下側主導体層に接続される下側共有線路主導体層と、この１対の共有線路主導体層に挟まれる前記誘電体層と、厚み方向に対向する上側共有線路主導体層及び下側共有線路主導体層と、前記上側共有線路主導体層及び下側共有線路主導体層を厚み方向に電気的に接続するように信号伝達方向に遮断波長以下の間隔で形成された二列のビアホール導体群とを含む共有線路部と、
前記高周波素子と、前記変換部とを接続する接続体と、
１つの高周波素子と、該高周波素子に接続される前記接続体と、該接続体に接続される前記変換部とを内部に収容する収容空間を有し、前記収容空間と外部空間との間で電磁波を遮蔽する保護部材とを備える高周波基板。 In a high-frequency substrate for mounting a plurality of high-frequency elements, which is formed by laminating a dielectric layer and a conductor layer,
A laminated waveguide having a sub line portion, a main line portion, and a conversion portion,
The sub-line portion includes the dielectric layer, the sub-line portion upper main conductor layer and the sub-line portion lower main conductor layer facing each other with the dielectric layer interposed therebetween, and the pair of sub-line portion upper and lower main conductors. Two rows of via-hole conductor groups formed at intervals equal to or shorter than the cutoff wavelength in the signal transmission direction so as to electrically connect the layers in the thickness direction,
The main line portion is connected to the sub line portion, and is thicker than the dielectric layer of the sub line portion, and the main line portion upper main conductor layer and the main line portion under the dielectric layer sandwiching the dielectric layer. A side main conductor layer and two rows of via-hole conductor groups formed at intervals equal to or less than the cutoff wavelength in the signal transmission direction so as to electrically connect the pair of main line upper and lower main conductor layers in the thickness direction; Including,
The conversion part is formed by integrally forming the upper main conductor layer of the sub line part and the main line part.
A laminated waveguide;
A laminated waveguide for connection connected to the laminated waveguide and connecting the high frequency elements to each other,
A pair of main conductor layers sandwiching the dielectric layer, and two rows of via-hole conductor groups formed so as to electrically connect the main conductor layers at intervals equal to or shorter than a cutoff wavelength in the signal transmission direction, A high-frequency signal is transmitted by a region surrounded by the body layer and the via-hole conductor group, and the upper main conductor layer of the pair of main conductor layers is located below the conversion unit, and the pair of main conductor layers Among them, the lower main conductor layer is located below the sub-line portion lower main conductor layer, and is connected to the multilayer waveguide for inner layer on the high-frequency substrate,
An upper shared line main conductor layer formed connected to the main line portion upper main conductor layer; a lower shared line main conductor layer connected to the lower main conductor layer of the connecting waveguide line; and The dielectric layer sandwiched between a pair of shared line main conductor layers, the upper shared line main conductor layer and the lower shared line main conductor layer opposed in the thickness direction, and the upper shared line main conductor layer and the lower shared line A shared line portion including two rows of via-hole conductor groups formed at intervals of a cutoff wavelength or less in the signal transmission direction so as to electrically connect the main conductor layer in the thickness direction;
A connecting body for connecting the high-frequency element and the converter;
There is an accommodation space for accommodating one high-frequency element, the connection body connected to the high-frequency element, and the conversion unit connected to the connection body, and between the accommodation space and the external space A high-frequency substrate comprising a protective member that shields electromagnetic waves.
前記高周波素子と前記入出力ポートとを接続する入出力用積層型導波管をさらに含む請求項１〜３のいずれか１つに記載の高周波基板。 A high-frequency signal input / output port is provided on the surface opposite to the surface on which the plurality of high-frequency elements are mounted,
The high-frequency board according to claim 1, further comprising an input / output laminated waveguide connecting the high-frequency element and the input / output port.
前記高周波素子を実装する側の主面に設けられた外部接続用パッドと、
内層に設けられ、前記バイアス供給用パッドと前記外部接続用パッドとを接続するバイアス供給用配線と、をさらに備え、
前記高周波素子は、前記バイアス供給用パッドとワイヤボンディング接続またはフリップチップ接続により接続された接続パッドを有し、該接続パッドに対し、前記外部接続用パッドを介して前記高周波素子の駆動用バイアス電圧を供給可能に構成されている請求項１〜６のいずれか１つに記載の高周波基板。 A bias supply pad provided on the main surface on which the high-frequency element is mounted;
An external connection pad provided on the main surface on which the high-frequency element is mounted;
A bias supply wiring provided in an inner layer and connecting the bias supply pad and the external connection pad; and
The high-frequency element has a connection pad connected to the bias supply pad by wire bonding connection or flip-chip connection, and the bias voltage for driving the high-frequency element to the connection pad via the external connection pad The high-frequency substrate according to claim 1, wherein the high-frequency substrate is configured to be capable of supplying the same.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009129338A JP5414364B2 (en) | 2009-05-28 | 2009-05-28 | High frequency substrate and high frequency module |
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| JP2009129338A JP5414364B2 (en) | 2009-05-28 | 2009-05-28 | High frequency substrate and high frequency module |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014023028A (en) * | 2012-07-20 | 2014-02-03 | Fujikura Ltd | Waveguide, waveguide manufacturing method, waveguide implementation structure, waveguide implementation method, and high-frequency communication module |
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| JPH04123601U (en) * | 1991-04-20 | 1992-11-10 | 日本電気株式会社 | Laminated high frequency circuit board |
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| JP2002208806A (en) * | 2001-01-11 | 2002-07-26 | Mitsubishi Electric Corp | Waveguide/microstrip line converter and high-frequency package using the same |
| JP2004254068A (en) * | 2003-02-20 | 2004-09-09 | Mitsubishi Electric Corp | High frequency transmitting and receiving module |
| JP2007067407A (en) * | 2005-08-30 | 2007-03-15 | Samsung Electro-Mechanics Co Ltd | Backside-ground-type flip chip semiconductor package |
| JP2008160785A (en) * | 2006-11-30 | 2008-07-10 | Kyocera Corp | Matching circuit, transmitter, receiver, transceiver, and radar apparatus |
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|---|---|---|---|---|
| JPH04123601U (en) * | 1991-04-20 | 1992-11-10 | 日本電気株式会社 | Laminated high frequency circuit board |
| JPH0936616A (en) * | 1995-07-13 | 1997-02-07 | Mitsubishi Electric Corp | Microwave circuit device |
| JPH09246816A (en) * | 1996-03-14 | 1997-09-19 | Nec Corp | Waveguide-microstrip line converter |
| JPH10189824A (en) * | 1996-12-27 | 1998-07-21 | Kyocera Corp | Package for housing of high-frequency element |
| JP2002208806A (en) * | 2001-01-11 | 2002-07-26 | Mitsubishi Electric Corp | Waveguide/microstrip line converter and high-frequency package using the same |
| JP2004254068A (en) * | 2003-02-20 | 2004-09-09 | Mitsubishi Electric Corp | High frequency transmitting and receiving module |
| JP2007067407A (en) * | 2005-08-30 | 2007-03-15 | Samsung Electro-Mechanics Co Ltd | Backside-ground-type flip chip semiconductor package |
| JP2008160785A (en) * | 2006-11-30 | 2008-07-10 | Kyocera Corp | Matching circuit, transmitter, receiver, transceiver, and radar apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2014023028A (en) * | 2012-07-20 | 2014-02-03 | Fujikura Ltd | Waveguide, waveguide manufacturing method, waveguide implementation structure, waveguide implementation method, and high-frequency communication module |
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| JP5414364B2 (en) | 2014-02-12 |
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