JP2010040355A - Substrate treatment method, film forming method, and manufacturing method of organic el device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve a problem that it is difficult to improve electric properties in a plurality of laminated layers by a conventional substrate treatment method. <P>SOLUTION: The substrate treatment method is for a substrate 41b including a liquid-repellent insulating film 61 and a hole injection layer 65 laminated on the insulating film 61. The method includes a diffusion process for diffusing at least a part of a liquid-repellent composition from the insulating film 61 to the hole injection layer 65. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a substrate processing method, a film forming method, and an organic EL device manufacturing method.

2. Description of the Related Art Conventionally, an organic EL (Electro Luminescence) device having a pair of electrodes and a light emitting layer interposed between the pair of electrodes is known as one of display devices.
In such an organic EL device, it is conventionally known that a liquid repellent treatment is performed on a substrate on which one of a pair of electrodes and a hole injecting and transporting layer is formed (see, for example, Patent Document 1). .

JP 2002-124381 A

According to the substrate processing method described in Patent Document 1, liquid repellency is imparted to the hole injecting and transporting layer. For this reason, when the liquid containing the material constituting the light emitting layer is disposed on the hole injecting and transporting layer, the liquid can be kept within a predetermined range. For this reason, the partition for damming the liquid material can be omitted.
Patent Document 1 describes, as examples of lyophobic treatment, a method of performing CF ₄ plasma treatment on a substrate, a method of applying a fluorinated alkyl coupling agent to a substrate, and the like.

However, in the method in which the substrate is subjected to CF ₄ plasma treatment, the surface of the hole injection / transport layer may become rough. When the surface of the hole injecting and transporting layer is rough, the current flow between the hole injecting and transporting layer and the light emitting layer is likely to be hindered.
Further, in the method of applying the alkyl fluoride coupling agent to the substrate, a new layer is easily formed between the hole injecting and transporting layer and the light emitting layer. When a new layer is interposed between the hole injecting and transporting layer and the light emitting layer, the current flow between the hole injecting and transporting layer and the light emitting layer is likely to be hindered.

  That is, in the conventional substrate processing method, there is a problem that it is difficult to improve electrical characteristics in a plurality of stacked layers.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 A substrate processing method having a liquid repellent layer having liquid repellency and a first layer laminated on the liquid repellent layer, the component having liquid repellency from the liquid repellent layer A substrate processing method comprising a diffusion step of diffusing at least a part of the first layer into the first layer.

The substrate processing method of Application Example 1 includes a diffusion process. A substrate to which this treatment method can be applied has a liquid repellent layer and a first layer. The liquid repellent layer has liquid repellency. The first layer is laminated on the liquid repellent layer. In the diffusion step, at least a part of the liquid repellent component is diffused from the liquid repellent layer to the first layer. Thereby, liquid repellency can be expressed in the first layer. For this reason, when the liquid material is disposed in the first layer, the liquid material can be easily kept within a predetermined range.
In addition, according to this processing method, the first layer is less likely to be damaged compared to, for example, a case where the first layer is subjected to plasma processing. For this reason, the surface roughness of the first layer can be easily maintained.
In addition, according to this processing method, for example, a layer between the first layer and the new layer is compared with a case where a layer having liquid repellency is stacked on the first layer and then a new layer is stacked. Can be omitted.
For these reasons, when a new layer is stacked on the first layer, the electrical characteristics between the first layer and the new layer can be easily improved.

  Application Example 2 In the substrate processing method described above, the diffusion step includes a heating step of heating the substrate.

  In Application Example 2, since the heating step is included in the diffusion step, it is possible to easily diffuse the liquid repellent component into the first layer.

  Application Example 3 In the above substrate processing method, the liquid repellent layer is made of a material containing an organic material, and in the heating step, the substrate is placed in a range of 50 ° C. or higher and lower than 280 ° C. A method for treating a substrate, comprising heating.

  In the substrate to which the treatment method of Application Example 3 can be applied, the liquid repellent layer is made of a material containing an organic material. And in a heating process, this board | substrate is heated in 50 degreeC or more and less than 280 degreeC. If it is less than 280 degreeC, it can make it easy to avoid damaging the liquid-repellent layer comprised with the material containing an organic material. Moreover, if it is 50 degreeC or more, it can make it easy to make the component which has liquid repellency diffuse to a 1st layer.

  Application Example 4 A substrate processing method according to the above-described substrate processing method, including a liquid repellency step for imparting the liquid repellency to the liquid repellency layer before the diffusion step.

  In Application Example 4, since there is a liquid repellency step for imparting liquid repellency to the liquid repellent layer before the diffusion step, the liquid repellent layer can be provided with liquid repellency.

  Application Example 5 In the above substrate processing method, the liquid repellent layer is made of a material containing the liquid repellent component.

  In Application Example 5, since the liquid repellent layer is formed of a material including a component having liquid repellency, a liquid repellent layer having liquid repellency can be formed.

  Application Example 6 In the first liquid body and the second liquid body, a substrate having a liquid repellent layer exhibiting liquid repellency with respect to at least the second liquid body is provided on at least a part of the region. By disposing one liquid material over at least a part of the liquid repellent layer, a liquid film forming step of forming a liquid film with the first liquid material, and after the liquid film forming step, the liquid repellent layer is formed. Included in the first liquid by drying at least a part of the liquid contained in the first liquid while diffusing at least a part of the liquid repellent component from the liquid layer into the liquid film. A first layer forming step of forming a first layer with a material to be formed, a liquid material arranging step of arranging the second liquid material on the first layer after the first layer forming step, and the liquid material arranging After the step, at least a part of the liquid contained in the second liquid is dried. By film forming method characterized by having the steps of forming a second layer of a material contained in the second liquid material.

The film forming method of Application Example 6 includes a liquid film forming process, a first layer forming process, a liquid material arranging process, and a second layer forming process. In the liquid film forming step, a liquid repellent layer that exhibits liquid repellency to at least the second liquid material among the first liquid material and the second liquid material is provided on the substrate provided in at least a part of the region. A liquid film is formed of the first liquid by disposing one liquid on at least a part of the liquid repellent layer. In the first layer forming step, at least a part of the liquid repellent component from the liquid repellent layer is diffused into the liquid film, and at least a part of the liquid contained in the first liquid is dried to thereby obtain the first layer. The first layer is formed of a substance contained in the liquid material. In the liquid material arranging step, the second liquid material is arranged so as to overlap the first layer. In the step of forming the second layer, the second layer is formed of the substance contained in the second liquid material by drying at least a part of the liquid contained in the second liquid material.
According to this film forming method, in the first layer forming step, at least a part of the component exhibiting liquid repellency with respect to the second liquid material is diffused from the liquid repellent layer to the liquid material film. 2 Liquid repellency with respect to the liquid material can be expressed. For this reason, when the second liquid material is arranged in the first layer in the liquid material arranging step, the second liquid material can be easily kept within a predetermined range.
Further, according to this film forming method, the first layer is less likely to be damaged compared to, for example, the case where the first layer is subjected to plasma treatment. For this reason, the surface roughness of the first layer can be easily maintained.
Further, according to this film forming method, for example, compared to the case where the second layer is stacked after the liquid-repellent layer is stacked on the first layer, the first layer is placed between the first layer and the second layer. Layers can be omitted.
For these reasons, it is possible to easily improve the electrical characteristics between the first layer and the second layer.

  Application Example 7 In the film forming method described above, the first liquid material and the second liquid material have different compositions from each other.

  In Application Example 7, since the first liquid body and the second liquid body have different compositions, the first layer and the second layer having different properties can be formed.

  Application Example 8 In the film forming method described above, the first layer forming step includes a heating step for heating the substrate.

  In Application Example 8, since the heating process is included in the first layer forming process, it is possible to easily diffuse the liquid repellent component into the liquid film.

  Application Example 9 In the above film forming method, the liquid repellent layer is made of a material including an organic material, and the substrate is heated in a range of 50 ° C. or higher and lower than 280 ° C. in the heating step. A film forming method characterized by:

  In the substrate to which the treatment method of Application Example 9 can be applied, the liquid repellent layer is made of a material containing an organic material. And in a heating process, this board | substrate is heated in 50 degreeC or more and less than 280 degreeC. If it is less than 280 degreeC, it can make it easy to avoid damaging the liquid-repellent layer comprised with the material containing an organic material. Moreover, if it is 50 degreeC or more, it can make it easy to make the component which has liquid repellency diffuse to a liquid film.

  [Application Example 10] The film forming method described above, further comprising a liquid repellency step of imparting the liquid repellency to the liquid repellent layer before the liquid film forming step.

  In Application Example 10, since there is a liquid repellency step for imparting liquid repellency to the liquid repellent layer before the liquid film forming step, the liquid repellent layer can have liquid repellency.

  Application Example 11 In the film forming method described above, in the liquid repellency step, the substrate is subjected to plasma treatment in an environment containing a gas containing at least one of fluorine and a fluorine compound. A film forming method.

  In Application Example 11, since the substrate is subjected to plasma treatment in an environment containing a gas containing at least one of fluorine and a fluorine compound in the liquid repellency step, liquid repellency can be imparted to the liquid repellent layer. .

  Application Example 12 In the film forming method described above, the liquid repellent layer is made of a material containing the liquid repellent component.

  In Application Example 12, since the liquid repellent layer is formed of a material including a component having liquid repellency, a liquid repellent layer having liquid repellency can be formed.

  Application Example 13 having a pair of electrodes facing each other and an organic layer interposed between the pair of electrodes, the organic layer having a plurality of layers including at least a first layer and a second layer A method for manufacturing an organic EL device, wherein a liquid repellent layer exhibiting liquid repellency to at least the second liquid material among the first liquid material and the second liquid material is provided in at least a part of the region. A liquid film is formed of the first liquid material by arranging the first liquid material on at least a part of the liquid repellent layer in a region including a region overlapping the liquid repellent layer in plan view on the obtained substrate. A liquid film forming step for forming the liquid material, and after the liquid film forming step, while diffusing at least a part of the liquid repellent component from the liquid repellent layer into the liquid film, the first liquid material Drying at least a part of the liquid contained in A first layer forming step of forming the first layer with a substance contained in the liquid material, and a liquid material arranging step of arranging the second liquid material on the first layer after the first layer forming step; And, after the liquid material arranging step, forming the second layer with a substance contained in the second liquid material by drying at least a part of the liquid contained in the second liquid material. A method for manufacturing an organic EL device.

The manufacturing method of the organic EL device of Application Example 13 includes a liquid film forming step, a first layer forming step, a liquid material arranging step, and a second layer forming step. An organic EL device to which this manufacturing method can be applied has a pair of electrodes facing each other and an organic layer interposed between the pair of electrodes. The organic layer has a plurality of layers including at least a first layer and a second layer.
In the liquid film forming step, a planar view is provided on a substrate provided with a liquid repellent layer that exhibits liquid repellency to at least the second liquid material in at least a part of the first liquid material and the second liquid material. The liquid film is formed of the first liquid material by arranging the first liquid material on at least a part of the liquid repellent layer in a region including the region overlapping the liquid repellent layer.
In the first layer forming step, at least a part of the liquid repellent component from the liquid repellent layer is diffused into the liquid film, and at least a part of the liquid contained in the first liquid is dried to thereby obtain the first layer. The first layer is formed of a substance contained in the liquid material.
In the liquid material arranging step, the second liquid material is arranged so as to overlap the first layer.
In the step of forming the second layer, the second layer is formed of the substance contained in the second liquid material by drying at least a part of the liquid contained in the second liquid material.
According to this manufacturing method, in the first layer forming step, at least a part of the component exhibiting liquid repellency with respect to the second liquid material is diffused from the liquid repellent layer to the liquid material film. Liquid repellency with respect to the liquid can be expressed. For this reason, when the second liquid material is arranged in the first layer in the liquid material arranging step, the second liquid material can be easily kept within a predetermined range.
Also, according to this manufacturing method, the first layer is less likely to be damaged than when the plasma treatment is performed on the first layer, for example. For this reason, the surface roughness of the first layer can be easily maintained.
In addition, according to this manufacturing method, for example, the layer between the first layer and the second layer is compared with the case where the second layer is stacked after the layer having liquid repellency is stacked on the first layer. Can be omitted.
For these reasons, it is possible to easily improve the electrical characteristics between the first layer and the second layer.

  Application Example 14 In the manufacturing method of the organic EL device described above, the pair of electrodes and the organic layer are provided for each of a plurality of pixels, and the liquid repellent layer is viewed in a plan view. In the liquid film forming step, the first liquid material is disposed in a region extending across the plurality of pixels beyond the liquid repellent layer, and the liquid material arrangement is performed. In the process, the second liquid material is individually arranged for each region surrounded by the liquid repellent layer.

In the organic EL device to which the manufacturing method of Application Example 14 can be applied, a pair of electrodes and an organic layer are provided for each pixel. The liquid repellent layer is provided in a region surrounding each pixel in plan view.
In this manufacturing method, in the liquid film forming step, the first liquid is disposed in a region that extends across a plurality of pixels beyond the liquid repellent layer.
In the liquid material arranging step, the second liquid material is individually arranged for each region surrounded by the liquid repellent layer.
Thereby, the second layer can be formed for each pixel.

  [Application Example 15] A method for manufacturing an organic EL device according to the above-described method, wherein the first layer forming step includes a heating step for heating the substrate.

  In Application Example 15, since the heating process is included in the first layer forming process, it is possible to easily diffuse the liquid repellent component into the liquid film.

  Application Example 16 In the manufacturing method of the organic EL device described above, the liquid repellent layer is made of a material containing an organic material, and the substrate is heated to 50 ° C. or higher and lower than 280 ° C. in the heating step. A method for manufacturing an organic EL device, characterized by heating in a range.

  In the organic EL device to which the manufacturing method of Application Example 16 can be applied, the liquid repellent layer is made of a material containing an organic material. And in a heating process, a board | substrate is heated in 50 degreeC or more and less than 280 degreeC. If it is less than 280 degreeC, it can make it easy to avoid damaging the liquid-repellent layer comprised with the material containing an organic material. Moreover, if it is 50 degreeC or more, it can make it easy to make the component which has liquid repellency diffuse to a liquid film.

  Application Example 17 In the method of manufacturing the organic EL device described above, the organic EL device includes a liquid repellency step of imparting the liquid repellency to the liquid repellent layer before the liquid film forming step. Manufacturing method of EL device.

  In Application Example 17, since there is a liquid repellency step for imparting liquid repellency to the liquid repellent layer before the liquid film forming step, the liquid repellent layer can have liquid repellency.

  Application Example 18 In the above-described organic EL device manufacturing method, in the liquid repellency step, the substrate is subjected to plasma treatment in an environment containing a gas containing at least one of fluorine and a fluorine compound. A method of manufacturing an organic EL device characterized by the above.

  In Application Example 18, since the substrate is subjected to plasma treatment in an environment containing a gas containing at least one of fluorine and a fluorine compound in the liquid repellency step, liquid repellency can be imparted to the liquid repellent layer. .

  Application Example 19 In the above-described organic EL device manufacturing method, the liquid repellent layer is made of a material containing the liquid repellency component.

  In Application Example 19, since the liquid repellent layer is formed of a material including a component having liquid repellency, the liquid repellent layer having liquid repellency can be formed.

  Application Example 20 In the method of manufacturing the organic EL device described above, the method includes the step of forming the liquid repellent layer before the liquid film forming step, and the step of forming the liquid repellent layer. And forming a resist layer and a liquid repellent material layer composed of a material containing the liquid repellent component and overlapping the resist layer in plan view, and then patterning the resist layer and the liquid repellent material layer By doing so, the said liquid repellent layer is formed, The manufacturing method of the organic EL apparatus characterized by the above-mentioned.

  The manufacturing method of Application Example 20 includes a step of forming a liquid repellent layer before the liquid film forming step. In the step of forming the liquid repellent layer, the liquid repellent layer is formed by patterning the resist layer and the liquid repellent material layer after forming the resist layer and the liquid repellent material layer. Thereby, a liquid repellent layer having liquid repellency can be formed.

Embodiments will be described with reference to the drawings, taking a display device using an organic EL device as an example.
The display device 1 according to the embodiment has a display surface 3 as shown in FIG.

  Here, a plurality of pixels 5 are set in the display device 1. The plurality of pixels 5 are arranged in the X direction and the Y direction in the drawing within the display area 7, and constitute a matrix M in which the X direction is the row direction and the Y direction is the column direction. The display device 1 can display an image on the display surface 3 by selectively emitting light from the plurality of pixels 5 to the outside of the display device 1 via the display surface 3. The display area 7 is an area where an image can be displayed. In FIG. 1, the pixels 5 are exaggerated and the number of the pixels 5 is reduced for easy understanding of the configuration.

The display device 1 according to the first embodiment includes an element substrate 11 and a sealing substrate 13 as shown in FIG. 2 which is a cross-sectional view taken along line AA in FIG.
The element substrate 11 is provided with an organic EL element, which will be described later, corresponding to each of the plurality of pixels 5 on the surface 15 side, that is, on the sealing substrate 13 side. The surface 15 opposite to the display surface 3 side of the sealing substrate 13 is set as the bottom surface of the display device 1. Hereinafter, the surface 15 is referred to as a bottom surface 15.

The sealing substrate 13 is provided in a state of facing the element substrate 11 on the bottom surface 15 side with respect to the element substrate 11. The element substrate 11 and the sealing substrate 13 are bonded via an adhesive 16. In the display device 1, the organic EL element is covered with the adhesive 16 from the bottom surface 15 side.
Further, the element substrate 11 and the sealing substrate 13 are sealed with a sealing material 17 that surrounds the display region 7 inside the periphery of the display device 1. That is, in the display device 1, the organic EL element and the adhesive 16 are sealed with the element substrate 11, the sealing substrate 13, and the sealing material 17.

Here, each of the plurality of pixels 5 in the display device 1 has a red color (R), a green color (G), and a blue color (B) as shown in FIG. Is set to one of these. That is, the plurality of pixels 5 constituting the matrix M include a pixel 5r that emits R light, a pixel 5g that emits G light, and a pixel 5b that emits B light.
In the following description, the expression “pixel 5” and the expressions “pixels 5r, 5g, and 5b” are appropriately used.

  Here, the color of R is not limited to a pure red hue, and includes orange and the like. The color of G is not limited to a pure green hue, and includes bluish green and yellowish green. The color of B is not limited to a pure blue hue, and includes bluish purple and blue-green. From another viewpoint, light exhibiting the color of R can be defined as light having a light wavelength peak in a range of 570 nm or more in the visible light region. The light exhibiting the color G can be defined as light having a light wavelength peak in the range of 500 nm to 565 nm. Light exhibiting the color B can be defined as light having a light wavelength peak in the range of 415 nm to 495 nm.

In the matrix M, a plurality of pixels 5 arranged along the Y direction form one pixel column 18. A plurality of pixels 5 arranged along the X direction form one pixel row 19.
Each pixel 5 in one pixel column 18 has a light color set to one of R, G, and B. That is, the matrix M includes a pixel column 18r in which a plurality of pixels 5r are arranged in the Y direction, a pixel column 18g in which the plurality of pixels 5g are arranged in the Y direction, and a pixel column 18b in which the plurality of pixels 5b are arranged in the Y direction. have. In the display device 1, the pixel column 18r, the pixel column 18g, and the pixel column 18b are repeatedly arranged in this order along the X direction.
In the following, the notation of the pixel column 18 and the notation of the pixel column 18r, the pixel column 18g, and the pixel column 18b are appropriately used.

The display device 1 includes a selection transistor 21, a drive transistor 23, a capacitor element 25, and an organic EL element 27 for each pixel 5, as shown in FIG. The organic EL element 27 includes a pixel electrode 29, an organic layer 31, and a common electrode 33. Each of the selection transistor 21 and the driving transistor 23 is configured by a TFT (Thin Film Transistor) element and has a function as a switching element.
In addition, the display device 1 includes a scanning line driving circuit 34, a data line driving circuit 35, a plurality of scanning lines GT, a plurality of data lines SI, and a plurality of power supply lines PW.

The plurality of scanning lines GT are respectively connected to the scanning line driving circuit 34, and extend in the X direction with a space therebetween in the Y direction.
The plurality of data lines SI are respectively connected to the data line driving circuit 35 and extend in the Y direction with a space therebetween in the X direction.
The plurality of power supply lines PW extend in the X direction in a state in which the power supply lines PW are spaced from each other in the Y direction, and the power supply lines PW and the scanning lines GT are spaced in the Y direction.

Each pixel 5 is set corresponding to the intersection of each scanning line GT and each data line SI. Each scanning line GT and each power supply line PW correspond to each pixel row 19 shown in FIG. Each data line SI corresponds to each pixel column 18 shown in FIG.
The gate electrode of each selection transistor 21 shown in FIG. 4 is electrically connected to each corresponding scanning line GT. The source electrode of each select transistor 21 is electrically connected to each corresponding data line SI. The drain electrode of each select transistor 21 is electrically connected to the gate electrode of each drive transistor 23 and one electrode of each capacitive element 25.

The other electrode of the capacitive element 25 and the source electrode of the driving transistor 23 are electrically connected to the corresponding power supply line PW.
The drain electrode of each drive transistor 23 is electrically connected to each pixel electrode 29. Each pixel electrode 29 and the common electrode 33 constitute a pair of electrodes having the pixel electrode 29 as an anode and the common electrode 33 as a cathode.
Here, the common electrode 33 is provided in a series of states between the plurality of pixels 5 constituting the matrix M, and functions in common between the plurality of pixels 5.
The organic layer 31 interposed between each pixel electrode 29 and the common electrode 33 is made of an organic material and has a configuration including a light emitting layer to be described later.

  The selection transistor 21 is turned on when a selection signal is supplied to the scanning line GT connected to the selection transistor 21. At this time, a data signal is supplied from the data line SI connected to the selection transistor 21, and the drive transistor 23 is turned on. The gate potential of the driving transistor 23 is held for a certain period by holding the potential of the data signal in the capacitor 25 for a certain period. As a result, the ON state of the drive transistor 23 is held for a certain period. Each data signal is generated at a potential corresponding to the gradation display.

When the ON state of the driving transistor 23 is maintained, a current corresponding to the gate potential of the driving transistor 23 flows from the power supply line PW to the common electrode 33 through the pixel electrode 29 and the organic layer 31. Then, the light emitting layer included in the organic layer 31 emits light with a luminance corresponding to the amount of current flowing through the organic layer 31. Thereby, the display device 1 can perform gradation display.
The display device 1 is one of bottom emission type organic EL devices in which a light emitting layer included in the organic layer 31 emits light, and light from the light emitting layer is emitted from the display surface 3 through the element substrate 11. In the display device 1, the expression “display surface 3 side” is also expressed as the upper side, and the expression “bottom surface 15 side” is also expressed as the lower side.

Here, the details of the configurations of the element substrate 11 and the sealing substrate 13 will be described.
The element substrate 11 has a first substrate 41 as shown in FIG. 5 which is a cross-sectional view taken along the line CC in FIG. In FIG. 5, the selection transistor 21, the capacitor 25, the data line SI, and the power supply line PW are omitted for easy understanding of the configuration.
The first substrate 41 is made of a light-transmitting material such as glass or quartz, for example, and includes a first surface 42a facing the bottom surface 15 side, and a second surface 42b facing the display surface 3 side. have.

A gate insulating film 43 is provided on the first surface 42 a of the first substrate 41. An insulating film 45 is provided on the bottom surface 15 side of the gate insulating film 43. An insulating film 47 is provided on the bottom surface 15 side of the insulating film 45.
A semiconductor layer 51 is provided on the first surface 42 a of the first substrate 41 corresponding to the drive transistor 23 of each pixel 5. The semiconductor layer 51 is covered from the bottom surface 15 side by the gate insulating film 43. As a material of the gate insulating film 43, for example, a material such as silicon oxide can be adopted.

  On the bottom surface 15 side of the gate insulating film 43, a gate electrode 53 is provided in a region overlapping the semiconductor layer 51 in plan view. As a material of the gate electrode 53, for example, a metal such as aluminum, copper, molybdenum, tungsten, or chromium, or an alloy containing these metals can be used. The gate electrode 53 is covered with the insulating film 45 from the bottom surface 15 side.

  On the bottom surface 15 side of the insulating film 45, a source electrode 55 is provided in a region overlapping a source region (not shown) of the semiconductor layer 51 in plan view. The source electrode 55 is connected to a source region (not shown) of the semiconductor layer 51 through a contact hole 57 provided in the insulating film 45 and the gate insulating film 43. As a material of the source electrode 55, for example, a metal such as aluminum, copper, molybdenum, tungsten, or chromium, or an alloy containing these metals can be employed. The source electrode 55 is covered with the insulating film 47 from the bottom surface 15 side.

A pixel electrode 29 is provided on the bottom surface 15 side of the insulating film 47. The pixel electrode 29 is connected to a drain region (not shown) of the semiconductor layer 51 through a contact hole 59 provided in the insulating film 47, the insulating film 45, and the gate insulating film 43. As a material of the pixel electrode 29, for example, ITO (Indium Tin Oxide), indium zinc oxide (Indium Zinc Oxide), or the like can be adopted. In this embodiment, ITO is used as the material of the pixel electrode 29.
Further, as the material of the insulating films 45 and 47, for example, materials such as silicon oxide, silicon nitride, and acrylic resin can be adopted.

  An insulating film 61 that partitions each pixel 5 is provided across the region 62 between the adjacent pixel electrodes 29. The insulating film 61 is made of a light transmissive material such as silicon oxide, silicon nitride, or acrylic resin. The insulating film 61 is provided in a lattice shape over the display region 7 in plan view. For this reason, the display region 7 is partitioned into regions of the plurality of pixels 5 by the insulating film 61. When attention is paid to one pixel 5, the insulating film 61 is provided in an annular shape in plan view. Each pixel electrode 29 overlaps the area of each pixel 5 surrounded by the insulating film 61 in plan view. In the present embodiment, an acrylic resin is employed as the material of the insulating film 61.

An organic layer 31 is provided on the bottom surface 15 side of the pixel electrode 29.
The organic layer 31 is provided corresponding to each pixel 5 and includes a hole injection layer 65, a hole transport layer 67, and a light emitting layer 69.
The hole injection layer 65 is made of an organic material, and is provided on the bottom surface 15 side of the pixel electrode 29.

In the present embodiment, the hole injection layer 65 is provided in a series of states across the plurality of pixels 5 across the insulating film 61. Therefore, each pixel electrode 29 and the insulating film 61 are covered from the bottom surface 15 side by the hole injection layer 65.
As the organic material for the hole injection layer 65, a mixture of a polythiophene derivative such as 3,4-polyethylenedioxythiophene (PEDOT) and polystyrene sulfonic acid (PSS) or the like may be employed. As the organic material for the hole injection layer 65, polystyrene, polypyrrole, polyaniline, polyacetylene, derivatives thereof, and the like may be employed. In the present embodiment, a mixture of PEDOT and PSS is employed as the organic material for the hole injection layer 65.

The hole transport layer 67 is made of an organic material, and is provided for each pixel 5. Each hole transport layer 67 is provided on the bottom surface 15 side of the hole injection layer 65. Each hole transport layer 67 is provided in a region overlapping each pixel electrode 29 in plan view.
As the organic material of the hole transport layer 67, for example, a configuration including a triphenylamine-based polymer such as TFB shown as the following compound 1 can be adopted.

The light emitting layer 69 is made of an organic material, and is provided for each pixel 5 individually. Each light emitting layer 69 is provided on the bottom surface 15 side of the hole transport layer 67. Each light emitting layer 69 is provided in a region overlapping with each pixel electrode 29 in plan view. In the present embodiment, each light emitting layer 69 covers each hole transport layer 67 from the bottom surface 15 side.
As the organic material of the light emitting layer 69 corresponding to the R pixel 5r, for example, a mixture of F8 (polydioctylfluorene) shown as the following compound 2 and a perylene dye may be employed.

  As the organic material of the light emitting layer 69 corresponding to the G pixel 5g, for example, a mixture of F8BT shown as the following compound 3, TFB shown as the compound 1, and F8 shown as the compound 2 is adopted. Can be done.

  As an organic material of the light emitting layer 69 corresponding to the B pixel 5b, for example, F8 shown as the compound 2 can be adopted.

As shown in FIG. 5, an electron injection layer 71 is provided on the bottom surface 15 side of the organic layer 31. As a material of the electron injection layer 71, for example, an alloy containing magnesium and silver, calcium, lithium fluoride, or the like can be adopted. In this embodiment, calcium is adopted as the material of the electron injection layer 71.
In the present embodiment, the electron injection layer 71 is provided in a state in which the electron injection layer 71 extends over the plurality of pixels 5 across the insulating film 61 in a plan view.

A common electrode 33 is provided on the bottom surface 15 side of the electron injection layer 71. In the present embodiment, the common electrode 33 is provided in a state in which the common electrode 33 extends across the plurality of pixels 5 across the insulating film 61 in a plan view.
As the common electrode 33, for example, a metal such as aluminum, an alloy containing aluminum (aluminum alloy), or the like can be employed. In the present embodiment, an aluminum alloy is employed as the common electrode 33.

  In the display device 1, the region that emits light in each pixel 5 can be defined as a region where the pixel electrode 29, the organic layer 31, and the common electrode 33 overlap in a plan view. In addition, a group of elements constituting a region that emits light for each pixel 5 may be defined as one organic EL element 27. In the display device 1, one organic EL element 27 includes one pixel electrode 29, one organic layer 31, one electron injection layer 71, and a common electrode 33 corresponding to one pixel 5. have.

The sealing substrate 13 is made of a light-transmitting material such as glass or quartz, and has an outward surface 13a directed to the bottom surface 15 side and a facing surface 13b directed to the display surface 3 side. is doing.
In the element substrate 11 and the sealing substrate 13 having the above-described configuration, the common electrode 33 of the element substrate 11 and the facing surface 13 b of the sealing substrate 13 are bonded via an adhesive 16.

  In the display device 1, the sealing material 17 illustrated in FIG. 2 is sandwiched between the first surface 42 a of the first substrate 41 and the facing surface 13 b of the sealing substrate 13 illustrated in FIG. 5. That is, in the display device 1, the organic EL element 27 and the adhesive 16 are sealed with the first substrate 41, the sealing substrate 13, and the sealing material 17. The sealing material 17 may be provided between the facing surface 13 b and the common electrode 33. In this case, the organic EL element 27 and the adhesive 16 can be regarded as being sealed by the element substrate 11, the sealing substrate 13, and the sealing material 17.

Here, a method for manufacturing the display device 1 will be described.
The manufacturing method of the display device 1 is roughly divided into a step of manufacturing the element substrate 11 and a step of assembling the display device 1.
In the process of manufacturing the element substrate 11, first, the drive element layer 81 is formed on the first surface 42 a of the first substrate 41 as shown in FIG. The drive element layer 81 includes the selection transistor 21 (FIG. 4), the drive transistor 23, the capacitor element 25 (FIG. 4), the power supply line PW (FIG. 4), the pixel electrode 29, the gate insulating film 43, and the insulating film 45. Insulating film 47 is included.

Next, as illustrated in FIG. 6B, the insulating film 61 is formed in a region overlapping the periphery of each pixel electrode 29 and the insulating film 47 (region 62 illustrated in FIG. 5) in plan view. In the formation of the insulating film 61, first, a resin film that covers each pixel electrode 29 and the insulating film 47 in a plan view is formed on the bottom surface 15 side of each pixel electrode 29 by using a spin coating technique or the like. Next, the resin film is patterned by utilizing, for example, a photolithography technique. Thereby, the insulating film 61 can be formed.
The first substrate 41 on which the configuration from the drive element layer 81 to the insulating film 61 is formed is hereinafter referred to as a substrate 41a.

Next, as shown in FIG. 7A, the substrate 41a is subjected to oxygen plasma treatment. Thereby, the lyophilicity with respect to the liquid material 65a mentioned later is provided to the pixel electrode 29. In the present embodiment, a method is employed in which plasma is generated in the processing chamber while introducing a processing gas into the processing chamber while the processing chamber is kept at a predetermined degree of vacuum. In the present embodiment, a gas containing oxygen is employed as the processing gas.
Here, an example of a plasma processing apparatus applied to the oxygen plasma processing in the present embodiment will be described. The plasma processing apparatus 83 includes a chamber (processing chamber) 85, a table 87, a coil 89, and a shower plate 91, as shown in FIG.

Connected to the chamber 85 are an introduction pipe 93 that guides the processing gas from the outside into the chamber 85 and an exhaust pipe 95 that discharges the gas from the chamber 85 to the outside. A dielectric plate 97 made of a dielectric is provided on the top plate portion of the chamber 85.
The table 87 is disposed in the chamber 85. The coil 89 is provided outside the chamber 85 so as to face the dielectric plate 97. The shower plate 91 is provided in a state facing the dielectric plate 97 in the chamber 85. A gap is provided between the dielectric plate 97 and the shower plate 91.
A high frequency bias power source 101 is connected to the table 87 via a matching unit 99. A high frequency power source 105 is connected to one end of the coil 89 via a matching unit 103. The other end of the coil 89 is grounded.

The introduction pipe 93 extends from the outside of the chamber 85 into the gap between the dielectric plate 97 and the shower plate 91. A valve 107 is connected to the introduction pipe 93 outside the chamber 85. The processing gas is introduced into the gap between the dielectric plate 97 and the shower plate 91 through the introduction pipe 93 after passing through the valve 107. The processing gas introduced into the gap between the dielectric plate 97 and the shower plate 91 is introduced into the chamber 85 through the shower plate 91.
A vacuum pump 109 is connected to the exhaust pipe 95 outside the chamber 85. The pressure in the chamber 85 is reduced by discharging the gas in the chamber 85 to the outside of the chamber 85 through the exhaust pipe 95 by the vacuum pump 109.

In the step of performing oxygen plasma treatment on the substrate 41 a, first, the substrate 41 a is placed on the table 87.
Next, the vacuum pump 109 is driven to keep the pressure in the chamber 85 in a reduced pressure state.
Next, the valve 107 is opened to introduce oxygen into the chamber 85.
Next, the high frequency power source 105 and the high frequency bias power source 101 are driven to apply a high frequency voltage to the coil 89 and a bias voltage to the table 87.
Thereby, oxygen plasma is induced in the chamber 85.

In the present embodiment, the oxygen plasma treatment conditions are as follows: the pressure in the chamber 85 is about 133 Pa (1 Torr), the amount of oxygen introduced is about 500 SCCM, the plasma irradiation intensity is 1 W / cm ² , and the treatment time is 1 minute. did.

Following the step of performing oxygen plasma treatment on the substrate 41a, as shown in FIG. 7B, CF ₄ plasma treatment is performed on the substrate 41a. Thereby, the liquid repellency with respect to the liquid body 65a mentioned later is provided to the insulating film 61. In the present embodiment, a method is employed in which plasma is generated in the processing chamber while introducing a processing gas into the processing chamber while the processing chamber is kept at a predetermined degree of vacuum. In the present embodiment, CF ₄ gas that is a gas containing a fluorine compound is employed as the processing gas.

The above-described plasma processing apparatus 83 (FIG. 8) can be applied to the CF ₄ plasma processing. In this embodiment, the CF ₄ plasma processing conditions are as follows: the pressure in the chamber 85 is about 133 Pa (1 Torr), the amount of CF ₄ gas introduced is about 900 SCCM, the plasma irradiation intensity is 1 W / cm ² , and the processing time is 3 minutes.
The processing gas is not limited to CF ₄ gas, and halogen gas such as SF ₆ or CHF ₃ , fluorine gas, or the like may be employed.

Following the step of performing the CF ₄ plasma treatment on the substrate 41a, as shown in FIG. 9A, a liquid film 65b is formed with the liquid material 65a on the bottom surface 15 side of each pixel electrode 29 and the insulating film 61. The liquid material 65 a contains an organic material that forms the hole injection layer 65. The liquid film 65b can be formed by utilizing a spin coating technique.
In addition, the liquid material 65a may employ a configuration in which a mixture of PEDOT and PSS is dissolved in a solvent. As the solvent, for example, pure water, diethylene glycol, isopropyl alcohol, normal butanol and the like can be employed. In the present embodiment, pure water is used as the solvent of the liquid material 65a.
The first substrate 41 on which the structure from the drive element layer 81 to the liquid film 65b is formed is hereinafter referred to as a substrate 41b.

Subsequent to the formation process of the liquid film 65b, the substrate 41b is subjected to heat treatment. As a result, the hole injection layer 65 shown in FIG. 9B can be formed.
In the present embodiment, as a heat treatment method, a method is employed in which the substrate 41b is held for a predetermined holding time in an environment maintained in a predetermined temperature range. As the conditions for the heat treatment, in the present embodiment, a temperature range of 50 ° C. or higher and lower than 280 ° C. and a holding time of about 10 minutes may be employed. If it is less than 50 degreeC, the time required for the effect mentioned later to be acquired will become long. For this reason, it is unpreferable from a viewpoint of efficiency to fall below 50 degreeC. Further, at 280 ° C. or higher, the insulating film 61 made of an organic material may be softened or the weight may be reduced. For this reason, 280 degreeC or more is not preferable.

After the formation of the hole injection layer 65, as shown in FIG. 9B, a liquid material 67a is disposed on the bottom surface 15 side of the hole injection layer 65 and in a region overlapping each pixel electrode 29 in plan view. At this time, the liquid material 67 a is individually arranged for each pixel 5.
The liquid material 67 a contains an organic material that constitutes the hole transport layer 67. In the present embodiment, a configuration in which TFB is dissolved in a solvent is employed as the liquid 67a. As a solvent, cyclohexylbenzene is employed.

For the arrangement of the liquid 67a, an ink jet method using the droplet discharge head 121 can be used.
A technique for ejecting the liquid 67a or the like as the droplet 67b from the droplet ejection head 121 is called an inkjet technique. And the method of arrange | positioning the liquid body 67a etc. in a predetermined position using an inkjet technique is called the inkjet method. This ink jet method is one of coating methods.

The liquid material 67a arranged individually for each pixel 5 is dried by a reduced pressure drying method and then baked in an inert gas, whereby the hole transport layer 67 shown in FIG. 10A can be formed.
The reduced pressure drying method is a drying method performed under a reduced pressure environment, and is also called a vacuum drying method. Further, in the present embodiment, as the firing condition of the liquid 67a, a condition is adopted in which the environmental temperature is about 130 ° C. and the holding time is about 1 hour.

Next, as illustrated in FIG. 10A, the liquid material 69 a is disposed on the bottom surface 15 side of the hole transport layer 67 and in a region overlapping each pixel electrode 29 in plan view. At this time, the liquid material 69 a is individually arranged for each pixel 5.
The liquid material 69 a contains an organic material that constitutes the light emitting layer 69. In the present embodiment, the liquid material 69a employs a configuration in which the organic material described above corresponding to each of the pixels 5r, 5g, and 5b is dissolved in a solvent. As a solvent, cyclohexylbenzene is employed.
Each liquid material 69a is disposed by discharging the liquid material 69a as a droplet 69b from the droplet discharge head 121. At this time, each hole transport layer 67 is covered with each liquid 69a.

  Next, each of the light emitting layers 69 shown in FIG. 10B can be formed by drying the liquid 69a by a reduced pressure drying method and then baking it in an inert gas. In the present embodiment, as a firing condition for the liquid 69a, a condition is adopted in which the environmental temperature is about 130 ° C. and the holding time is about 1 hour.

Next, as shown in FIG. 10B, the hole injection layer 65 is irradiated with ultraviolet light 125 through a photomask 123.
Here, the photomask 123 has an opening 127 and a light shielding portion 129 corresponding to each pixel 5. Each opening 127 extends over a region overlapping the region 62 in plan view. Each light shielding portion 129 extends over the area of each pixel 5 in plan view.
The hole injection layer 65 is irradiated with ultraviolet light 125 through the opening 127. For this reason, the ultraviolet light 125 is irradiated only to the area | region 62 by planar view. At this time, the ultraviolet light 125 is also applied to a part of each hole transport layer 67 and a part of each light emitting layer 69. In other words, in this embodiment, the hole injection layer 65, each hole transport layer 67, and each light emitting layer 69 are irradiated with ultraviolet light 125 in a state where the region of each pixel 5 is masked.

In the present embodiment, a condition in which ultraviolet light 125 having a wavelength of 365 nm is irradiated for about 15 minutes at an intensity of about 1500 mW / cm ² is employed.
By the irradiation with the ultraviolet light 125, the hole injection layer 65 loses its function as the hole injection layer 65 and exhibits insulation.
Also, in each hole transport layer 67 and each light emitting layer 69, the portions irradiated with the ultraviolet light 125 lose their respective functions and develop insulating properties.

In the following, the portion of the hole injection layer 65 that has lost its function is expressed as a deactivation portion 65c. Further, a portion of each hole transport layer 67 that has lost its function is expressed as a deactivated portion 67c, and a portion of each light emitting layer 69 that has lost its function is expressed as a deactivated portion 69c.
These inactive portions 65c, 67c and 69c can enhance the electrical insulation between the adjacent pixels 5.

After the irradiation with the ultraviolet light 125, an electron injection layer 71 shown in FIG. 5 can be formed by forming a calcium film on the bottom surface 15 side of the organic layer 31 by utilizing a vapor deposition technique or the like.
Next, the common electrode 33 shown in FIG. 5 can be formed by forming a film of an aluminum alloy by utilizing a vapor deposition technique using a mask. Thereby, the element substrate 11 can be manufactured.

In the process of assembling the display device 1, as shown in FIG. 2, the element substrate 11 and the sealing substrate 13 are joined via an adhesive 16 and a sealing material 17.
At this time, the element substrate 11 and the sealing substrate 13 are joined in a state where the first surface 42a of the first substrate 41 and the facing surface 13b of the sealing substrate 13 face each other, as shown in FIG. Thereby, the display apparatus 1 can be manufactured.

In the present embodiment, the insulating film 61 corresponds to the liquid repellent layer, the hole injection layer 65 corresponds to the first layer, the substrate 41b corresponds to the substrate, the hole transport layer 67 corresponds to the second layer, The liquid body 65a corresponds to the first liquid body, the liquid body 67a corresponds to the second liquid body, and the pixel electrode 29 and the common electrode 33 correspond to a pair of electrodes. Moreover, the process of heat-processing the board | substrate 41b respond | corresponds to the diffusion process as a heating process. Further, the process of performing the CF ₄ plasma treatment on the substrate 41a corresponds to the liquid repellency process.

  In the present embodiment, the liquid film 65b shown in FIG. 9A is provided in a state in which the liquid film 65b extends over a region across the plurality of pixels 5 (FIG. 5) beyond the insulating film 61. For this reason, compared with the structure which has the partition which partitions off each pixel 5, for example, the positive hole injection layer 65 can be formed easily.

  Here, if the hole injection layer 65 is individually formed for each pixel 5 in the configuration having the partition wall that partitions each pixel 5, the thickness of each hole injection layer 65 is likely to vary. This variation in film thickness is easily reflected in each hole transport layer 67 and each light emitting layer 69. For this reason, in the configuration having partition walls that partition each pixel 5, the film thickness of each organic layer 31 tends to vary. In the organic EL device, if the film thickness of each organic layer 31 varies, the light emission luminance in each light emitting layer 69 tends to vary. As a result, in the configuration having the partition walls that partition each pixel 5, display quality may be impaired due to variations in light emission luminance.

  On the other hand, in this embodiment, since the hole injection layer 65 can be easily formed flat, it is possible to easily reduce variations in the film thickness of each organic layer 31. Thereby, in this embodiment, display quality can be easily improved.

  Further, in the present embodiment, there is a step of performing heat treatment on the substrate 41b after the liquid film 65b is formed and before the liquid material 67a shown in FIG. 9B is arranged. Thereby, at least a part of the liquid repellent component from the insulating film 61 can be easily diffused into the liquid film 65b. As a result, liquid repellency is likely to appear in the hole injection layer 65. For this reason, when each liquid material 67a is disposed on the bottom surface 15 side of the hole injection layer 65, each liquid material 67a can be easily retained in a region overlapping each pixel electrode 29 in plan view. Thereby, compared with the structure which has the partition which divides each pixel 5, for example, a partition can be abbreviate | omitted and the cost concerning the display apparatus 1 can be reduced.

Further, in the present embodiment, the hole injection layer 65 is less likely to be damaged than when the hole injection layer 65 is subjected to plasma treatment or the like to impart liquid repellency to the hole injection layer 65, for example. For this reason, it can suppress low that the surface roughness of the positive hole injection layer 65 is impaired.
Further, in the present embodiment, for example, the hole injection layer 65 and the hole transport layer 67 are compared with the case where the hole transport layer 67 is formed after the liquid injection layer is laminated on the hole injection layer 65. It is possible to avoid an extra layer interposed therebetween.
For these reasons, the electrical characteristics of each organic layer 31 can be easily improved, and the display quality can be further improved.

In the present embodiment, a method of imparting liquid repellency to the insulating film 61 by performing CF ₄ plasma treatment on the substrate 41a is adopted, but a method of imparting liquid repellency to the insulating film 61 is used here. It is not limited. By adopting, for example, a material containing fluorine or a fluorine compound as a material constituting the insulating film 61, the insulating film 61 exhibiting liquid repellency can be configured. Thereby, the step of performing the CF ₄ plasma treatment on the substrate 41a can be omitted, and the efficiency in the method for manufacturing the display device 1 can be improved.

A second embodiment will be described.
The display device 1 according to the second embodiment has an element substrate 20 as shown in FIG. 11 which is a cross-sectional view taken along line AA in FIG. The display device 1 in the second embodiment has the same configuration as the display device 1 in the first embodiment, except that the element substrate 11 in the first embodiment is replaced with the element substrate 20. . For this reason, in the following second embodiment, in order to avoid redundant description, the same components as those in the first embodiment are denoted by the same reference numerals, detailed description thereof is omitted, and different points from the first embodiment. Only that will be described.

In the element substrate 20, as shown in FIG. 12, which is a cross-sectional view taken along the line CC in FIG. 3, the insulating film 61 includes a resist layer 61a and a liquid repellent layer 61b.
Here, a process of manufacturing the element substrate 20 will be described.
In the process of manufacturing the element substrate 20, first, the drive element layer 81 is formed on the first surface 42 a of the first substrate 41 as shown in FIG.
Next, as shown in FIG. 13B, a resist layer 61 a and a liquid repellent layer 61 b are provided on the bottom surface 15 side of the drive element layer 81 so as to overlap in this order.

Here, the resist layer 61a and the liquid repellent layer 61b can be supplied in a state of being laminated on the base film 131 as shown in FIG. The laminated film 133 in which the resist layer 61a and the like are laminated on the base film 131 may be referred to as a dry film resist.
In the laminated film 133, the liquid repellent layer 61b is laminated on the base film 131, and the resist layer 61a is laminated on the liquid repellent layer 61b. The resist layer 61a and the liquid repellent layer 61b laminated on the base film 131 are protected by a cover film 135.

In the step of providing the resist layer 61 a and the liquid repellent layer 61 b on the bottom surface 15 side of the driving element layer 81, the cover film 135 is peeled off from the laminated film 133 and then the resist layer 61 a is attached to the bottom surface 15 side of the driving element layer 81. . At this time, the resist layer 61a is attached to the drive element layer 81 in a state where the resist layer 61a and each pixel electrode 29 face each other.
By attaching the resist layer 61a to the driving element layer 81, as shown in FIG. 13B, the resist layer 61a, the liquid repellent layer 61b, and the base film 131 are laminated in this order. The resist layer 61a has photosensitivity.

Next, as illustrated in FIG. 13C, the resist layer 61 a is exposed to ultraviolet light 143 through a photomask 141. The photomask 141 has an opening 145 and a light shielding portion 147. Each opening 145 extends over a region overlapping the region 62 (FIG. 12) in plan view. Each light shielding portion 147 extends over the area of each pixel 5 (FIG. 12) in plan view.
Following the exposure process, the base film 131 is peeled off, and then the resist layer 61a is developed. Thereby, as shown in FIG. 15A, an insulating film 61 can be formed.
Next, as shown in FIG. 15B, the substrate 41a is subjected to oxygen plasma treatment. Thereby, lyophilicity is imparted to the pixel electrode 29.

Next, a liquid film 65 b is formed with the liquid material 65 a on the bottom surface 15 side of each pixel electrode 29 and the insulating film 61.
Since the steps from the formation of the liquid film 65b to the formation of the common electrode 33 are the same as those in the first embodiment, the description thereof is omitted.
In the second embodiment, the liquid repellent layer 61b corresponds to the liquid repellent material layer, and the insulating film 61 corresponds to the liquid repellent layer.
In the second embodiment, the same effect as in the first embodiment can be obtained.

In the second embodiment, since the insulating film 61 includes the resist layer 61a and the liquid repellent layer 61b, the insulating film 61 having liquid repellency can be formed. For this reason, the step of imparting liquid repellency to the insulating film 61 can be omitted.
In the first embodiment, a method of imparting liquid repellency to the insulating film 61 by performing CF ₄ plasma treatment on the substrate 41a is employed. Therefore, as compared with the first embodiment, in the second embodiment, the step of performing the CF ₄ plasma treatment on the substrate 41a can be omitted.
Thereby, the efficiency in the manufacturing method of the display apparatus 1 is achieved.

Here, examples and comparative examples will be described.
In the examples and comparative examples described below, the substrate 41a shown in FIG. 6B was used as a sample. Three samples prepared under the same conditions were prepared. The three samples are identified as Sample 1, Sample 2 and Sample 3.
Samples 1 to 3 were subjected to oxygen plasma treatment and CF ₄ plasma treatment. The order and conditions of these processes were made the same as the order and conditions described above.
Next, a liquid film 65b was formed on Samples 1 to 3.

Example 1
Sample 1 was subjected to heat treatment under the conditions of a temperature of 200 ° C. and a holding time of 10 minutes. Thereby, the hole injection layer 65 was formed from the liquid film 65b.
Next, cyclohexylbenzene was dropped onto the hole injection layer 65 and the contact angle was measured. For the measurement of the contact angle, a fine contact angle meter FTA4000 (manufactured by First Ten Angstroms) was used.
The contact angle in Sample 1 was 45 degrees.

(Example 2)
Sample 2 was subjected to heat treatment under the conditions of a temperature of 100 ° C. and a holding time of 10 minutes. Thereby, the hole injection layer 65 was formed from the liquid film 65b.
Next, cyclohexylbenzene was dropped onto the hole injection layer 65 and the contact angle was measured.
The contact angle in Sample 2 was 40 degrees.

(Comparative example)
The liquid film 65b was naturally dried without subjecting the sample 3 to heat treatment. Thereby, the hole injection layer 65 was formed from the liquid film 65b.
Next, cyclohexylbenzene was dropped onto the hole injection layer 65 and the contact angle was measured.
The contact angle in Sample 3 was 10 degrees.

  From the results of Example 1, Example 2, and Comparative Example, it is understood that it is preferable to heat-treat the liquid film 65b. Further, from this result, it is understood that a higher temperature is preferable for the same holding time. From the opposite viewpoint, it is understood that when the temperature is lowered, the holding time required to obtain the same liquid repellency is increased.

  The display state of the display device 1 created under each condition in Example 1, Example 2, and Comparative Example was observed. As a result, it was confirmed that the display device 1 corresponding to each of Example 1 and Example 2 had less luminance unevenness than the display device 1 corresponding to the comparative example.

  In the present embodiment, the display device 1 in which a plurality of pixels 5 are set and the organic EL element 27 is provided for each pixel 5 has been described as an example, but the embodiment is not limited thereto. As an embodiment, there is also a form such as a lighting device in which the organic EL elements 27 are arranged in a series over the display region 7. Such an illuminating device is suitable for a light source such as a liquid crystal display device.

  In the present embodiment, the insulating film 61 is made of a light transmissive material, but the material of the insulating film 61 is not limited to this. As the material of the insulating film 61, a material having high light absorption can also be adopted. If a material having a high light absorption property is adopted as the material of the insulating film 61, the light shielding property between the adjacent pixels 5 is enhanced. Thereby, the contrast in display can be easily improved, and the display quality can be further improved.

  In the present embodiment, a configuration in which the hole transport layer 67 is the second layer is employed, but the configuration is not limited to this. If a layer capable of generating holes and sending holes to the light emitting layer 69 is provided as the first layer, a configuration in which the light emitting layer 69 is the second layer may be employed.

In the present embodiment, the bottom emission type organic EL device that emits light from the organic layer 31 from the display surface 3 through the element substrate 11 has been described as an example. However, the organic EL device is not limited to this. As the organic EL device, a top emission type in which light from the organic layer 31 is emitted from the bottom surface 15 through the sealing substrate 13 may be employed.
In the case of the top emission type, since the light from the organic layer 31 is emitted from the bottom surface 15, the display surface 3 is set on the bottom surface 15 side. That is, in the top emission type, the bottom surface 15 of the display device 1 and the display surface 3 are interchanged. In the top emission type, the bottom surface 15 side corresponds to the upper side, and the display surface 3 side corresponds to the lower side.

  The display device 1 described above can be applied to, for example, the display unit 510 of the electronic device 500 illustrated in FIG. The electronic device 500 is a mobile phone. This electronic device 500 has an operation button 511. The display unit 510 can display various information including information input by the operation buttons 511 and incoming call information. In this electronic apparatus 500, since the display device 1 is applied to the display unit 510, luminance unevenness in each pixel 5 can be suppressed low.

  The electronic device 500 is not limited to a mobile phone, and includes various electronic devices such as mobile computers, digital still cameras, digital video cameras, in-vehicle devices such as display devices for car navigation systems, and audio devices.

The top view which shows the display apparatus in this embodiment. Sectional drawing when the display apparatus in 1st Embodiment is cut | disconnected by the AA in FIG. FIG. 3 is a plan view showing a part of a plurality of pixels in the embodiment. 1 is a diagram showing a circuit configuration of a display device in an embodiment. Sectional drawing when the display apparatus in 1st Embodiment is cut | disconnected by CC line in FIG. The figure explaining the manufacturing process of the element substrate in 1st Embodiment. The figure explaining the manufacturing process of the element substrate in 1st Embodiment. Sectional drawing which shows the structure of an outline of an example of the plasma processing apparatus applied to the oxygen plasma processing in this embodiment. The figure explaining the manufacturing process of the element substrate in 1st Embodiment. The figure explaining the manufacturing process of the element substrate in 1st Embodiment. Sectional drawing when the display apparatus in 2nd Embodiment is cut | disconnected by the AA in FIG. Sectional drawing when the display apparatus in 2nd Embodiment is cut | disconnected by CC line in FIG. The figure explaining the manufacturing process of the element substrate in 2nd Embodiment. The perspective view explaining the structure of the laminated | multilayer film which can be applied to the manufacturing process of the element substrate in 2nd Embodiment. The figure explaining the manufacturing process of the element substrate in 2nd Embodiment. The perspective view of the electronic device to which the display apparatus in this embodiment is applied.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Display apparatus, 3 ... Display surface, 5 ... Pixel, 7 ... Display area, 11, 20 ... Element substrate, 15 ... Bottom surface, 27 ... Organic EL element, 29 ... Pixel electrode, 31 ... Organic layer, 33 ... Common electrode 41 ... first substrate, 41a ... substrate, 41b ... substrate, 61 ... insulating film, 61a ... resist layer, 61b ... liquid repellent layer, 62 ... region, 65 ... hole injection layer, 65a ... liquid, 65b ... liquid Body film, 65c ... deactivated part, 67 ... hole transport layer, 67a ... liquid, 67b ... droplet, 67c ... deactivated part, 69 ... light emitting layer, 69a ... liquid, 69b ... droplet, 69c ... deactivated Active part 71 ... Electron injection layer 81 ... Drive element layer 83 ... Plasma processing apparatus 121 ... Droplet discharge head 131 ... Base film 133 ... Laminated film 135 ... Cover film 500 ... Electronic device 510 ... Display section.

Claims (20)

A method for treating a substrate comprising a liquid repellent layer having liquid repellency and a first layer laminated on the liquid repellent layer,
A substrate processing method comprising a diffusion step of diffusing at least a part of the liquid repellent component from the liquid repellent layer into the first layer.   The substrate processing method according to claim 1, wherein the diffusion step includes a heating step of heating the substrate. The liquid repellent layer is made of a material containing an organic material,
3. The substrate processing method according to claim 2, wherein in the heating step, the substrate is heated in a range of 50 ° C. or higher and lower than 280 ° C. 4.   4. The substrate processing method according to claim 1, further comprising a liquid repellency step of imparting the liquid repellency to the liquid repellency layer before the diffusion step. 5.   4. The substrate processing method according to claim 1, wherein the liquid repellent layer is made of a material including the liquid repellent component. 5. Of the first liquid body and the second liquid body, the first liquid body is applied to a substrate provided with a liquid repellent layer having liquid repellency to at least the second liquid body in at least a part of the region. A liquid film forming step of forming a liquid film with the first liquid by disposing the liquid repellent layer on at least part of the liquid repellent layer;
After the liquid film formation step, at least a part of the liquid contained in the first liquid is dried while diffusing at least a part of the liquid repellent component from the liquid repellent layer into the liquid film. A first layer forming step of forming a first layer with a substance contained in the first liquid,
After the first layer forming step, a liquid material arranging step of arranging the second liquid material on the first layer, and
Forming a second layer with a substance contained in the second liquid material by drying at least a part of the liquid contained in the second liquid material after the liquid material arranging step;
A film forming method comprising:   The film forming method according to claim 6, wherein the first liquid body and the second liquid body have different compositions from each other.   The film forming method according to claim 6, wherein the first layer forming step includes a heating step of heating the substrate. The liquid repellent layer is made of a material containing an organic material,
The film forming method according to claim 8, wherein in the heating step, the substrate is heated in a range of 50 ° C. or higher and lower than 280 ° C.   The film forming method according to claim 6, further comprising a lyophobic step of imparting the lyophobic property to the lyophobic layer before the liquid film forming step.   The film forming method according to claim 10, wherein in the lyophobic step, the substrate is subjected to plasma treatment in an environment containing a gas containing at least one of fluorine and a fluorine compound.   The film forming method according to claim 6, wherein the liquid repellent layer is made of a material including the liquid repellent component. An organic EL device having a pair of electrodes facing each other and an organic layer interposed between the pair of electrodes, wherein the organic layer has a plurality of layers including at least a first layer and a second layer A manufacturing method of
A liquid repellent layer exhibiting liquid repellency to at least the second liquid material among the first liquid material and the second liquid material is formed on the liquid repellent layer in a plan view on a substrate provided in at least a part of the region. A liquid film forming step of forming a liquid film with the first liquid by disposing the first liquid on at least a part of the liquid repellent layer in a region including the overlapping region;
After the liquid film formation step, at least a part of the liquid contained in the first liquid is dried while diffusing at least a part of the liquid repellent component from the liquid repellent layer into the liquid film. A first layer forming step of forming the first layer with a substance contained in the first liquid,
After the first layer forming step, a liquid material arranging step of arranging the second liquid material on the first layer, and
Forming the second layer with a substance contained in the second liquid material by drying at least a part of the liquid contained in the second liquid material after the liquid material arranging step;
A method for producing an organic EL device, comprising: The pair of electrodes and the organic layer are provided for each pixel of a plurality of pixels,
The liquid repellent layer is provided in a region surrounding each pixel in a plan view,
In the liquid film forming step, the first liquid material is disposed in a region extending across the plurality of pixels beyond the liquid repellent layer,
14. The method of manufacturing an organic EL device according to claim 13, wherein, in the liquid material arranging step, the second liquid material is individually arranged for each region surrounded by the liquid repellent layer.   The method for manufacturing an organic EL device according to claim 13, wherein the first layer forming step includes a heating step of heating the substrate. The liquid repellent layer is made of a material containing an organic material,
The method of manufacturing an organic EL device according to claim 15, wherein in the heating step, the substrate is heated in a range of 50 ° C. or higher and lower than 280 ° C.   The organic EL device according to any one of claims 13 to 16, further comprising a lyophobic step for imparting the lyophobic property to the lyophobic layer before the liquid film forming step. Method.   18. The method of manufacturing an organic EL device according to claim 17, wherein in the liquid repellency step, the substrate is subjected to plasma treatment in an environment containing a gas containing at least one of fluorine and a fluorine compound.   The method of manufacturing an organic EL device according to claim 13, wherein the liquid repellent layer is made of a material including the liquid repellent component. Before the liquid film forming step, the step of forming the liquid repellent layer,
In the step of forming the liquid repellent layer, after forming a resist layer and a liquid repellent material layer made of a material containing the liquid repellent component and overlapping the resist layer in plan view, the resist The method for manufacturing an organic EL device according to claim 13, wherein the liquid repellent layer is formed by patterning a layer and the liquid repellent material layer.

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