JP2010034342A - Method for manufacturing semiconductor element, semiconductor element, light-emitting device, display device and driving substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of easily manufacturing a highly reliable semiconductor element, and to provide the semiconductor element. <P>SOLUTION: Gate electrodes 2a, 2b are formed, source electrodes 5a, 5c and drain electrodes 5b, 5d are formed, semiconductor films 6a, 6b are formed using organic semiconductor materials, and protective films 7a, 7b are formed on surfaces of the semiconductor films 6a, 6b, respectively. The protective films 7a, 7b are formed by applying coating liquids containing protective materials and fluorine-based solvents on the surfaces of the semiconductor films 6a, 6b, respectively. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a semiconductor element and a semiconductor element in which a channel layer is formed using an organic semiconductor material.

  An organic semiconductor element using an organic semiconductor can be manufactured by a simple process as compared with a silicon semiconductor element having a complicated manufacturing process, and may be manufactured at a low cost. In addition, the organic semiconductor element may be able to realize a mechanically flexible element with a large area, and may be used as a substitute for the silicon semiconductor element depending on the application, so that it is one of useful semiconductor elements. Attention has been paid. The organic semiconductor element is expected to be applied particularly to a display device that is expected to increase in size, such as a display device using an organic EL (Electro Luminescence) element and a liquid crystal display device, or a bendable RFID (Radio Frequency Identification) tag. Has been.

  In an organic semiconductor element, a channel layer formed between source / drain electrodes is composed of an organic semiconductor (see, for example, Patent Document 1 and Patent Document 2). For example, a display device using an organic semiconductor element and an organic EL element includes an organic semiconductor element that functions as a driving element or a switching element, and the organic EL element driven by the organic semiconductor element is stacked on the organic semiconductor element. . Generally, in an organic semiconductor element, a protective film for protecting a channel layer is formed on the surface of the organic semiconductor film. As a method for forming such a protective film, an organic film such as a parylene film is formed by a chemical vapor deposition (CVD) method, or a water-soluble organic material such as PVA is dissolved in an aqueous solvent. A method of applying the coating has been proposed.

JP 2006-128623 A JP 2007-36259 A

  However, when the protective film is formed by a film forming method that requires an advanced vacuum process such as CVD, there is a problem that the manufacturing method becomes complicated. In addition, when a water-soluble organic material such as PVA is used as the protective film, the channel layer may be damaged by the reaction between the organic semiconductor film and the protective film, which causes a problem in the reliability of the semiconductor element. there were.

  Therefore, the present invention provides a semiconductor element manufacturing method, a semiconductor element, a light-emitting device, a display device, and a semiconductor element that can easily manufacture a highly reliable semiconductor element as compared with a semiconductor element manufactured using a water-soluble organic material. An object is to provide a driving substrate.

  In order to solve the above-described problems and achieve the object, a method of manufacturing a semiconductor device according to the present invention includes a gate electrode forming step for forming a gate electrode and a source / drain electrode forming step for forming a source electrode and a drain electrode. And a semiconductor film forming step of forming an organic semiconductor film using an organic semiconductor material, and a protective film forming step of forming a protective film on the surface of the organic semiconductor film. In the protective film forming step, The protective film is formed by applying a coating liquid containing a film material and a fluorinated solvent to the surface of the organic semiconductor film.

  Moreover, the method for manufacturing a semiconductor element according to the present invention is characterized in that the protective film material is a fluororesin.

  The semiconductor element according to the present invention includes a gate electrode, a source electrode, a drain electrode, an organic semiconductor film, and a protective film provided on a surface of the organic semiconductor film, and the protective film is made of a fluorine-based resin. It is characterized by being composed.

  The semiconductor element according to the present invention is characterized in that the protective film is formed by applying a coating liquid containing the protective film material and a fluorine-based solvent on the surface of the organic semiconductor film.

  In addition, a display device according to the present invention includes the above-described semiconductor element according to the present invention and a light-emitting element driven by the semiconductor element.

  A drive substrate according to the present invention includes a substrate and a plurality of the semiconductor elements according to the present invention provided on the substrate.

  In the present invention, a protective film is formed on the surface of the organic semiconductor film for forming the channel layer by using a coating method that is a simple process, and the protective film is applied by using a fluorine-based solvent that hardly dissolves the organic semiconductor film. Damage to the organic semiconductor film during film formation by the method can be suppressed, and a highly reliable semiconductor element can be easily manufactured.

  Embodiments of the present invention will be described below with reference to the drawings. Note that the present invention is not limited to the embodiments. In the description of the drawings, the same parts are denoted by the same reference numerals. Furthermore, it should be noted that the drawings are schematic, and the relationship between the thickness and width of each layer, the ratio of each layer, and the like are different from the actual ones. Also in the drawings, there are included portions having different dimensional relationships and ratios.

First, an organic EL display device according to an embodiment of the present invention will be described. FIG. 1 is a diagram showing an example of a block diagram of an organic EL display device according to the present embodiment. As shown in FIG. 1, the organic EL display device according to the present embodiment includes a display panel 603, a scan driving unit 604 connected thereto, a data driving unit 605, a driving voltage generating unit 607, and a signal for controlling them. A control unit 606 is included. Display panel 603 is scanned connected to the driving unit 604 to transmit a respective scan signal Vg scanning signal lines _G 1 ~G _n, and the data connected to the driving unit 605 the data signal lines _D 1 to D for transmitting the data signal Vd connected to a plurality of signal lines such as _m . Each scanning signal line G _{1 to} G _n extends in a substantially row direction, and each data signal line D _{1 to} D _m extends in a substantially column direction. The display panel 603 includes a plurality of pixels arranged in a matrix so as to be connected to the scanning signal lines G _{1 to} G _n and the data signal lines D _{1 to} D _m , respectively.

  FIG. 2 is a circuit diagram corresponding to one pixel of the organic EL display device according to the present embodiment. As shown in FIG. 2, the display panel 603 further includes a signal line L <b> 3 that transmits the drive voltage signal Vp output from the drive voltage generation unit 607. The signal line L3 functions as a power supply line that supplies current. As shown in FIG. 2, each pixel includes a switching transistor 21 corresponding to a semiconductor element, a driving transistor 22, a capacitor 23, and an organic EL element 24 corresponding to a light emitting element. The signal line L1 shown in FIG. 2 corresponds to the data signal line of this pixel, and the signal line L2 corresponds to the scanning signal line of this pixel.

  The switching transistor 21 has an input terminal connected to the signal line L 1, a control terminal connected to the signal line L 2, and an output terminal connected to the control terminal Ng of the drive transistor 22. The switching transistor 21 outputs the data signal Vd applied to the data line L1 to the drive transistor 22 in response to the scanning signal Vg applied to the signal line L2 that is the scanning signal line.

  The control terminal Ng of the drive transistor 22 is connected to the switching transistor 21, and the output terminal Nd is connected to the organic EL element 24. The input terminal Ns of the drive transistor 22 is connected to the signal line L3. The drive transistor 22 supplies the organic EL element 24 with an output current I whose magnitude is controlled according to the magnitude of the voltage Vgs applied between the control terminal Ng and the input terminal Ns. This output current I is supplied from the signal line L3 functioning as a power supply line via the input terminal Ns.

  The capacitor 23 is provided between the control terminal Ng of the drive transistor 22 and the input terminal Ns, charges the data signal Vd applied to the control terminal Ng of the drive transistor 22 and holds it for a certain period.

  The cathode electrode of the organic EL element 24 is connected to the common voltage Vcom, and the anode electrode is connected to the output terminal Nd of the drive transistor 22. The organic EL element 24 emits light with luminance corresponding to the output current I by driving the driving transistor 22.

  Next, in describing the semiconductor element according to the present embodiment, the structure per pixel of the organic EL display device described above will be described. In the present embodiment, the switching transistor 21 and the drive transistor 22 for controlling the light emitting operation of the organic EL element 24 that is a light emitting element of the organic EL display device will be described as an example of the semiconductor element.

  FIG. 3 is a diagram showing a cross section of each element constituting one pixel of the organic EL display device according to the present embodiment. As shown in FIG. 3, in the pixel 100 of the organic EL display device in the present embodiment, a switching transistor 21, a drive transistor 22, and an organic EL element 24 are formed on a substrate 1 made of glass, plastic, or the like. The substrate 1 is a substrate on which semiconductor elements such as the switching transistor 21 and the driving transistor 22 according to the present embodiment are provided. Further, the substrate 1 on which semiconductor elements such as the switching transistor 21 and the driving transistor 22 and wirings connected thereto are formed is a so-called array substrate (also called an active matrix substrate) or a substrate called a TFT substrate. It is a drive substrate for driving a light emitting element in the display device (in this embodiment, the organic EL element 24 of the organic EL display device).

  The switching transistor 21 has a function of outputting a data signal applied to the data line to the drive transistor 22 in accordance with the scanning signal, and the drive transistor 22 has a magnitude of a voltage applied between the control terminal and the output terminal. Accordingly, the organic EL element 24 has a function of supplying an output current whose magnitude is controlled to the organic EL element 24. In addition to the switching transistor 21, the drive transistor 22, and the organic EL element 24, the pixel 100 further includes a capacitor that charges a data signal applied to the control terminal of the drive transistor 22 and holds it for a certain period.

  The switching transistor 21 is formed between a gate electrode 2a that functions as a control terminal, a source electrode 5a that functions as an input terminal, a drain electrode 5b that functions as an output terminal, and a source electrode 5a and a drain electrode 5b. And a semiconductor film 6a functioning as A gate insulating film 3 is formed between the gate electrode 2a and the source electrode 5a, the drain electrode 5b, and the semiconductor film 6a.

  The drive transistor 22 is formed between the gate electrode 2b functioning as a control terminal, the source electrode 5c functioning as an input terminal, the drain electrode 5d functioning as an output terminal, and the source electrode 5c and the drain electrode 5d. And a semiconductor film 6b functioning as The gate electrode 2 b is connected to the drain electrode 5 b of the switching transistor 21 through the contact 4. A gate insulating film 3 is formed between the gate electrode 2b and the source electrode 5c, the drain electrode 5d, and the semiconductor film 6b. The capacitor is formed by a partial region of the gate electrode 2b, a partial region of the gate insulating film 3, and a partial region of the source electrode 5c.

  The organic EL element 24 includes an anode electrode 12 connected to the drain electrode 5d of the driving transistor 22 via the contact 11, an organic film 13 formed on the anode electrode 12, and a cathode electrode 14 formed on the organic film 13. With. Further, the organic film 13 includes a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, an electron injection layer, and a hole barrier layer, and has a luminance corresponding to the amount of current supplied from the anode electrode 12. Flashes on. The contact 11 is provided on the interlayer insulating film 10 formed between the source electrodes 5a and 5c, the drain electrodes 5b and 5d, the semiconductor films 6a and 6b, and the anode electrode 12 of the organic EL element 24. A predetermined interlayer film 15 is laminated between the interlayer insulating film 10 and the cathode electrode 14. In order to suppress an increase in resistivity of the cathode electrode 14, an auxiliary electrode 12b connected to the cathode electrode 14 through a contact is provided.

  The cathode electrode 14 is formed of a transparent film or a semitransparent film. A protective film 16 formed of a transparent film or a semi-transparent film and an upper substrate 17 that is transparent or semi-transparent are provided on the cathode electrode 14, and transmits light emitted from the organic film 13. It is possible to output to the outside. Therefore, the pixel 100 is a top emission type.

Here, the semiconductor film 6a functioning as a channel layer of the switching transistor 21 and the semiconductor film 6b functioning as a channel layer of the driving transistor 22 form a semiconductor film capable of realizing a high hole mobility of 1 cm ² / Vs or more. Possible semiconductor materials such as pentacene, precursors of tetrabenzoporphyrin, 13,6-N-Sulfinylacetamidopentacene, 2,7-Diphenyl [1] benzothieno [3,2-b] [1] benzothiophene, 6,13- It is formed of an organic semiconductor material such as bis (triisopropylsilylethynyl) pentacene (common name: TIPS-pentacene).

  Then, on the upper surfaces of the semiconductor films 6a and 6b, first protective films 7a and 7b formed using a material that dissolves in a solvent in which the constituent materials of the organic semiconductor films 6a and 6b are insoluble, respectively. As such a solvent, for example, an inert and inert fluorine-based solvent such as Fluorinert (manufactured by Sumitomo 3M) and Asahi Glass Co., Ltd. CT-Solv.180 can be used. In addition, when a fluorinated solvent is used as a solvent, the protective film material to be melted in the solvent is mainly composed of a fluorinated solvent such as Teflon (registered trademark) (TEFLON AF2400 manufactured by DuPont, etc.). It is preferable to use a fluorine-based resin material that is easily soluble in molecules. Cytop CTL-809M (manufactured by Asahi Glass Co., Ltd.) can also be used as a coating solution containing a protective film material and a fluorine-based solvent. In general, fluorine-based resin materials have the property of being soluble in fluorine-based solvents in which the constituent materials of the semiconductor film are insoluble. Therefore, by combining fluorine-based materials as materials for forming a protective film as described above, Thus, the semiconductor device according to the present embodiment can be manufactured more simply. Furthermore, since the fluororesin material hardly reacts with the constituent material of the semiconductor film, it is possible to obtain advantages such as stability in the manufacturing process and extension of the life of the semiconductor device after the product.

  Further, the second protective film 9 is formed so as to cover the entire surface of the semiconductor films 6a and 6b on which the first protective films 7a and 7b are formed on the upper surface. As with the first protective films 7a and 7b, the second protective film 9 is a material that dissolves in a solvent in which the constituent materials of the organic semiconductor films 6a and 6b are insoluble, for example, a fluorine-based material such as Teflon (registered trademark). It is formed using a resin material. Thus, the first protective films 7a and 7b and the second protective film 9 are formed so as to cover all the surfaces of the semiconductor films 6a and 6b. A light shielding film 8 is formed on the first protective films 7a and 7b to form the first protective films 7a and 7b.

  Since the first protective films 7a and 7b and the second protective film 9 are formed using a material that dissolves in a solvent in which the constituent materials of the organic semiconductor films 6a and 6b are insoluble, the constituent materials of the semiconductor films 6a and 6b are used. Is not dissolved in the solvent used for forming the first protective films 7a, 7b and the second protective film 9, so that the first protective films 7a, 7b and the second protective film 9 are formed. The surface of the semiconductor films 6a and 6b is not damaged. In addition, since the first protective films 7a and 7b and the second protective film 9 hardly react with the semiconductor films 6a and 6b, the first protective films 7a and 7b and the second protective film 9 are semiconductors. The films 6a and 6b are not damaged. Since the first protective films 7a and 7b and the second protective film 9 are formed so as to cover all the surfaces of the semiconductor films 6a and 6b, the contact between the interlayer insulating film 10 and the semiconductor films 6a and 6b is prevented. It can be surely prevented. Therefore, the first protective films 7a and 7b and the second protective film 9 can stably protect the semiconductor films 6a and 6b without damaging the semiconductor films 6a and 6b.

  As described above, in the pixel 100 shown in FIG. 3, the first protective films 7a and 7b and the second protective film 9 are formed using a material that dissolves in a solvent in which the constituent materials of the organic semiconductor films 6a and 6b are insoluble. By forming, the channel layers of the switching transistor 21 and the driving transistor 22 can be appropriately maintained, and thus the reliability of the switching transistor 21 and the driving transistor 22 can be sufficiently maintained.

  Next, a method for manufacturing the pixel 100 shown in FIG. 3 will be described. 4A to 4F are cross-sectional views illustrating a method of manufacturing the pixel 100 illustrated in FIG. First, a metal film, a transparent oxide conductive film, or the like is formed on the substrate 1 by using a sputtering method, a vacuum deposition method, or the like to form the gate electrodes 2a and 2b, and then as shown in FIG. Then, the gate electrodes 2a and 2b are patterned by using a photolithography method. The substrate 1 may be an insulating substrate such as glass or plastic. The substrate 1 may be a so-called flexible substrate that is flexible and can be greatly deformed. Further, since the pixel 100 is a top emission type, the substrate 1 is not necessarily transparent. The gate electrodes 2a and 2b are made of a material containing a highly conductive conductor such as a metal film such as Cr, Al, Cu, Ag, APC, Ti, TiN, or Au, or a transparent oxide conductor such as ITO or IZO. Formed using. Coating methods such as printing, inkjet printing, spin coating, etc., using a coating solution in which nanoparticles composed of inorganic oxide semiconductors or metals such as ITO, ZTO, Ag, Au, and Cu are dispersed in a dispersion medium Thus, the gate electrodes 2a and 2b can be formed. Further, when the gate electrodes 2a and 2b are formed by using the printing method and the ink jet printing method, it is not necessary to perform a photolithography process, so that the mask can be reduced. The gate electrodes 2a and 2b are formed with a film thickness of 200 nm, for example.

  Next, as shown in FIG. 4B, the gate insulating film 3 is formed using a liquid repellent organic photosensitive resin or the like as a material. The gate insulating film 3 preferably has a dielectric constant of 1.5 or more and a film thickness of 500 nm or less in order to ensure the driving capability of each transistor. Further, it is desirable that the gate insulating film 3 is sufficiently cross-linked to ensure flatness of 1 nm or less. The gate insulating film 3 is formed using a method according to the material such as a coating method including a spin coating method. The gate insulating film 3 is preferably made of a material that can be preserved in shape by heat treatment at 250 ° C. or lower after exposure and development.

  Then, as illustrated in FIG. 4C, a contact hole 4a is formed on the gate electrode 2b by using a photolithography method or the like. After the substrate cleaning and drying treatment, an organic Ag ink is applied to the entire surface of the substrate 1 using a spin coat method, and patterned into an electrode shape using a photolithography method, so that a contact 4 as shown in FIG. The source electrodes 5a and 5c and the drain electrodes 5b and 5d are collectively formed. In this manner, the manufacturing process can be simplified by forming the contact 4 together with the source electrodes 5a and 5c and the drain electrodes 5b and 5d. In addition, the number of masks and the number of processes can be reduced by forming the contact 4 and the source electrodes 5a and 5c and the drain electrodes 5b and 5d using an ink jet printing method, a printing method, or the like. . Of course, in order to form the contact 4 and the source electrodes 5a and 5c and the drain electrodes 5b and 5d, a metal film having a high work function such as Au or a transparent oxide conductive film is used by using a vacuum deposition method or a sputtering method. Then, the contact 4, the source electrodes 5a and 5c, and the drain electrodes 5b and 5d may be patterned using a photolithography method or the like. Alternatively, the source electrodes 5a and 5c and the drain electrodes 5b and 5d may be formed after the contact 4 is formed by embedding a conductive material in the contact hole 4a. The source electrodes 5a and 5c and the drain electrodes 5b and 5d are formed with a film thickness of 500 nm, for example.

  Next, as shown in FIG. 4-5, semiconductor films 6a and 6b functioning as channel layers are formed between the source electrodes 5a and 5c and the drain electrodes 5b and 5d. The semiconductor films 6a and 6b are formed of, for example, a precursor of pentacene or tetrabenzoporphyrin, 13,6-N-Sulfinylacetamidopentacene, 2,7-Diphenyl [1] benzothieno [3,2-b] [1] benzothiophene, 6,13- It is formed of an organic semiconductor material having bis (triisopropylsilylethynyl) pentacene (common name: TIPS-pentacene). The semiconductor films 6a and 6b are formed using a method according to the material such as a coating method, and then patterned using a photolithography method or the like. Note that it is possible to reduce the number of masks and the number of processes by forming the semiconductor films 6a and 6b using an ink jet printing method, a printing method, or the like. In addition, when a liquid repellent treatment is performed on a region other than the channel formation region and the channel formation region is made lyophilic, the semiconductor films 6a and 6b can be selectively formed using a spin coating method. Therefore, it is possible to reduce the number of masks. The semiconductor films 6a and 6b are formed with a film thickness of 40 to 100 nm, for example.

  Then, after applying a coating solution containing a fluorine resin such as Teflon (registered trademark) and a fluorine solvent, the solvent is removed, and a light shielding film such as Al is formed only in the channel formation region. In addition, as shown in FIG. 4-6, first protective films 7a and 7b are formed on the upper surfaces of the semiconductor films 6a and 6b by using a photolithography method or the like. Of course, the first protective films 7a and 7b may be formed using an ink jet printing method, a printing method, or the like. In this case, it is not necessary to form the light shielding film 8, and the number of masks and the number of processes can be further reduced. The first protective films 7a and 7b are formed with a film thickness of, for example, 500 nm to 1 μm.

  4-7, a second protective film 9 is formed by applying a fluorine resin such as Teflon (registered trademark) over the entire surface of the substrate. The first protective films 7a and 7b and the second protective film 9 cover the upper surfaces and side surfaces of the semiconductor films 6a and 6b. Then, an interlayer insulating film 10 is formed on the second protective film 9. The interlayer insulating film 10 is formed of a photosensitive resin having a thickness of 2 to 10 μm, for example. Next, a contact hole 11a is formed in the interlayer insulating film 10 as shown in FIG.

  Thereafter, the contact 11 shown in FIG. 3 is formed by embedding a conductive material in the contact hole 11a. Then, in order to form the anode electrode 12 of the organic EL element 24, a metal material, a transparent oxide conductive material, or the like is formed on the entire surface using a vacuum deposition method, a sputtering method, or the like, and then the anode electrode is used using a photolithography method or the like. 12 and the auxiliary electrode 12b are patterned. The anode electrode 12 is formed of, for example, a laminated film of ITO / Ag / ITO. Alternatively, the contact 11, the anode electrode 12, and the auxiliary electrode 12 b may be formed in a lump by patterning the conductive material as it is after the conductive material is embedded.

  Next, after the interlayer film 15 is laminated, the organic film 13 constituting the organic EL element 24 is applied onto the anode electrode 12, and then the cathode electrode 14 is formed using a transparent or translucent metal material or oxide conductor material. To do. The cathode electrode 14 is formed of, for example, an alloy material of Mg and Ag. Then, after forming a transparent film or semi-transparent protective film 16 for protecting the organic EL element 24, the upper substrate 17 is provided on the protective film 16, whereby the pixel 100 shown in FIG. 3 can be obtained. Instead of the upper substrate 17, the protective film 16 may be covered with a sealing transparent resin.

  As described above, in the present embodiment, since the material for forming the first protective films 7a and 7b and the second protective film 9 is formed using a coating method, an advanced vacuum process is not necessarily required. Therefore, a highly reliable semiconductor element can be manufactured by a simple process without using a device having a large device configuration. Furthermore, in this embodiment, when each electrode is formed using a nanoparticle metal material, organic Ag, or the like, all the layers up to the first protective films 7a and 7b and the second protective film 9 are formed. Since it can be formed by a simple coating method, a semiconductor element can be formed by a simpler process and process damage to the semiconductor films 6a and 6b can be further reduced.

  In this embodiment, the so-called top emission type pixel 100 has been described as an example. However, the present invention is not limited to this example, and can be applied to a transistor used for a pixel having a so-called bottom emission type structure. .

  In the present embodiment, the transistor that controls the light emitting operation of the organic EL element that is the light emitting element of the organic EL display device has been described as an example. However, the present invention is not limited to this, and the RFID tag, the product tag, the memory element, A transistor used for a digital circuit such as a ring oscillator or a microcomputer, or a part or all of an analog circuit may be used, and any transistor can be applied as long as it forms another element on the transistor.

In the following examples and comparative examples, a plurality of types of solutions were respectively applied on the following two types of organic semiconductor films (1) and (2), and the solubility of each semiconductor film in the applied solutions was observed. Further, for (2), the characteristics of the transistor before and after applying a plurality of types of solutions on the organic semiconductor film were measured.
(1) Semiconductor film made of Pentacene obtained by vapor deposition method (2) 6,13-bis (triisopropylsilylethynyl) pentacene (common name: TIPS-pentacene) obtained by applying by spin coating method and sufficiently drying by baking Transistor comprising a semiconductor film comprising

Example 1
When coating solution 1 in which Dupont TEFLON AF2400 (fluorinated resin) was dissolved in Sumitomo 3M Fluorinert (fluorinated solvent) was applied to the semiconductor films of (1) and (2), each semiconductor film was dissolved. I did not. In addition, when the semiconductor characteristics of the transistor (2) before and after applying the coating liquid 1 were measured and compared, both Ion / Ioff (transistor ON current and OFF current) showed some characteristic changes, but normal. The transistor characteristics were confirmed. Regarding the characteristic change, it is considered that there is an influence of performing the baking process again to dry the coating solution.

(Example 2)
When Cytop CTL-809M manufactured by Asahi Glass Co., Ltd. was applied to each semiconductor film, each semiconductor film did not dissolve. In addition, when measuring and comparing the semiconductor characteristics of the transistor in (2) before and after applying Cytop CTL-809M manufactured by Asahi Glass Co., Ltd., some characteristic changes were observed for both Ion and Ioff, but normal transistor characteristics were confirmed. It was. Regarding the characteristic change, it is considered that there is an influence of performing the baking process again to dry the coating solution.

(Comparative example)
When acetone, xylene, THF (tetrahydrofuran), IPA (isopropyl alcohol) and a photoresist were applied to the semiconductor films of (1) and (2), changes were observed on the film surface such as cracks in the semiconductor film. As the photoresist, a commercially available one using PEGMEA (polyethylene glycol monoethyl acetate), cyclopentanone, gamma butyl lactone, ethanol / butanol / butyl acetate or the like as a solvent was used. Further, when the semiconductor characteristics of the transistor (2) before and after the application of these solutions were measured and compared, transistor operation could not be confirmed. Even if it was confirmed, there was a significant deterioration in characteristics such as Ion being several orders of magnitude lower.

It is a figure which shows an example of the block diagram of the organic electroluminescent display apparatus concerning embodiment of this invention. It is a circuit diagram corresponding to one pixel of the organic EL display device concerning embodiment of this invention. It is the figure which showed the cross section of each element which comprises one pixel of the organic electroluminescent display apparatus concerning embodiment of this invention. FIG. 4 is a cross-sectional view showing a method for manufacturing the semiconductor device shown in FIG. 3. FIG. 4 is a cross-sectional view showing a method for manufacturing the semiconductor device shown in FIG. 3. FIG. 4 is a cross-sectional view showing a method for manufacturing the semiconductor device shown in FIG. 3. FIG. 4 is a cross-sectional view showing a method for manufacturing the semiconductor device shown in FIG. 3. FIG. 4 is a cross-sectional view showing a method for manufacturing the semiconductor device shown in FIG. 3. FIG. 4 is a cross-sectional view showing a method for manufacturing the semiconductor device shown in FIG. 3. FIG. 4 is a cross-sectional view showing a method for manufacturing the semiconductor device shown in FIG. 3. FIG. 4 is a cross-sectional view showing a method for manufacturing the semiconductor device shown in FIG. 3.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate 2a, 2b Gate electrode 3 Gate insulating film 4, 11 Contact 4a, 11a Contact hole 5a, 5c Source electrode 5b, 5d Drain electrode 6a, 6b Semiconductor film 7a, 7b First protective film 9 Second protective film 8 Light shielding film 10 Interlayer insulating film 12 Anode electrode 13 Organic film 14 Cathode electrode 16 Protective film 17 Upper substrate 21 Switching transistor 22 Drive transistor 24 Organic EL element 100 Pixel

Claims (6)

A gate electrode forming step of forming a gate electrode;
A source / drain electrode forming step of forming a source electrode and a drain electrode;
A semiconductor film forming step of forming an organic semiconductor film using an organic semiconductor material;
A protective film forming step of forming a protective film on the surface of the organic semiconductor film;
Including
In the protective film forming step, the protective film is formed by applying a coating liquid containing a protective film material and a fluorine-based solvent on the surface of the organic semiconductor film.   The method for manufacturing a semiconductor element according to claim 1, wherein the protective film material is a fluorine-based resin. A gate electrode, a source electrode, a drain electrode, an organic semiconductor film, and a protective film provided on the surface of the organic semiconductor film;
The said protective film is comprised with a fluorine resin, The semiconductor element characterized by the above-mentioned.   The semiconductor device according to claim 3, wherein the protective film is formed by applying a coating liquid containing the protective film material and a fluorine-based solvent on a surface of the organic semiconductor film. A semiconductor element according to claim 3 or 4,
A light emitting element driven by the semiconductor element;
A display device comprising: A substrate,
A plurality of semiconductor elements according to claim 3 or 4 provided on the substrate;
A driving substrate comprising:

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