JP2010034255A - Optical semiconductor device module - Google Patents

Optical semiconductor device module Download PDF

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JP2010034255A
JP2010034255A JP2008194423A JP2008194423A JP2010034255A JP 2010034255 A JP2010034255 A JP 2010034255A JP 2008194423 A JP2008194423 A JP 2008194423A JP 2008194423 A JP2008194423 A JP 2008194423A JP 2010034255 A JP2010034255 A JP 2010034255A
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semiconductor device
optical semiconductor
coupler
device module
power supply
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JP5232559B2 (en
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Takateru Sakai
隆照 酒井
Norifumi Imazeki
規文 今関
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Stanley Electric Co Ltd
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Stanley Electric Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem with an optical semiconductor device module for vehicle use that a coupler for clamping and fixing a supporting substrate with an optical semiconductor device mounted thereon has a weak joint and lighting and non-lighting are repeated. <P>SOLUTION: A coupler 6 is composed of a housing 61 and power supply irregularities 62a and 62b fixed to an upper part 61U of the housing 61. The power supply irregularities 62a and 62b have a metal coating, e.g., by gold plating, and wiring pattern layers 24a and 24b of a mounting substrate 2 also have a metal coating of the same material. If the mounting substrate 2 is pressed into the coupler 6, the metal coating of the power supply irregularities 62a and 62b and the metal coating of the wiring pattern layers 24a and 24b of the mounting substrate 2 are diffusion-bonded by friction heat at press-fitting. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は光半導体装置モジュール、特に、ヘッドランプ等の車載用の光半導体装置モジュールに関する。   The present invention relates to an optical semiconductor device module, and more particularly to an in-vehicle optical semiconductor device module such as a headlamp.

一般に、車載用の光半導体装置モジュールたとえば発光ダイオード(LED)モジュールは、チップ抵抗、コンデンサ等の電子部品のモジュールと同様に、LEDをリード線取出用のカプラと共に実装基板に搭載して固定させることにより構成される。   In general, in-vehicle optical semiconductor device modules, such as light-emitting diode (LED) modules, are mounted on a mounting board and fixed together with a coupler for lead wire extraction in the same manner as electronic component modules such as chip resistors and capacitors. Consists of.

すなわち、図8に示すように、LED101を実装基板102に搭載し、LED101のリードフレーム(導電端子)(図示せず)をボンディングワイヤもしくはウェッジ(図示せず)により実装基板102上の配線パターン層102a、102bに接続する。また、リード線103a、103bを有するカプラ(コネクタ)103も実装基板102上に搭載して固定される。   That is, as shown in FIG. 8, the LED 101 is mounted on the mounting substrate 102, and the lead frame (conductive terminal) (not shown) of the LED 101 is connected to the wiring pattern layer on the mounting substrate 102 by bonding wires or wedges (not shown). 102a and 102b are connected. A coupler (connector) 103 having lead wires 103a and 103b is also mounted on the mounting substrate 102 and fixed.

図9に示すように、カプラ103の導電端子103c、103dははんだ104a、104bによって実装基板102に固定されている。   As shown in FIG. 9, the conductive terminals 103c and 103d of the coupler 103 are fixed to the mounting substrate 102 by solders 104a and 104b.

尚、カプラ103の導電端子103c、103dはねじ、抵抗溶接あるいはレーザ溶接によっても実装基板102に固定できる。   The conductive terminals 103c and 103d of the coupler 103 can be fixed to the mounting substrate 102 by screws, resistance welding or laser welding.

しかしながら、図9に示すごとく、はんだ104a、104bによるカプラ103の固定においては、ヒートショック試験の結果、カプラ103と実装基板102との線膨張係数の相違からはんだ104a、104bの接合部にはんだクラックが発生する。また、エンジンに近い位置に取付けられた場合、高温環境下で導電端子103c、103dとはんだ104a、104bとの間で金属拡散が発生して金属間化合物が形成される。この金属間化合物は一般的に脆弱であるので、振動、衝撃、さらにリード線103a、103bの撓みによりはんだ104a、104bの接合部にはんだクラックが発生する。この結果、給電不良による不灯、また、放熱性の劣化、さらに、カプラ103の脱落を招くおそれがある。尚、鉛フリー化が進む車載部品においても、はんだフリー化が進んでいる。   However, as shown in FIG. 9, in fixing the coupler 103 with the solders 104a and 104b, as a result of the heat shock test, a solder crack is caused at the joint between the solders 104a and 104b due to the difference in the linear expansion coefficient between the coupler 103 and the mounting substrate 102. Will occur. In addition, when mounted near the engine, metal diffusion occurs between the conductive terminals 103c and 103d and the solders 104a and 104b in a high temperature environment, and an intermetallic compound is formed. Since this intermetallic compound is generally brittle, solder cracks are generated at the joints of the solders 104a and 104b due to vibration, impact, and bending of the lead wires 103a and 103b. As a result, there is a possibility that non-lighting due to power feeding failure, deterioration of heat dissipation, and dropping of the coupler 103 may be caused. In addition, in-vehicle components that are becoming lead-free are also becoming solder-free.

また、ねじによるカプラ103の固定においては、ねじの回転トルクが導電端子103c、103dにかかり、導電端子103c、103dが変形し、不灯を招くおそれがある。   Further, when the coupler 103 is fixed with a screw, the rotational torque of the screw is applied to the conductive terminals 103c and 103d, and the conductive terminals 103c and 103d may be deformed, resulting in unlighting.

さらに、抵抗溶接もしくはレーザ溶接によるカプラ103の固定においては、非常に強固な接合が行えるが、はんだ104a、104bによる固定、ねじによる固定に比較して、カプラ103の交換が非常に困難である。   Furthermore, in the fixing of the coupler 103 by resistance welding or laser welding, very strong joining can be performed. However, it is very difficult to replace the coupler 103 as compared with the fixing by the solders 104a and 104b and the fixing by screws.

このように、カプラ103の導電端子103c、103dを直接加工もしくは変形させるカプラ103の固定は,導電端子103c、103dの接合部におけるはんだクラック、導電端子103c、103dの変形、カプラ103の脱落を招くおそれがあった。   As described above, fixing of the coupler 103 that directly processes or deforms the conductive terminals 103c and 103d of the coupler 103 causes solder cracks at the joints of the conductive terminals 103c and 103d, deformation of the conductive terminals 103c and 103d, and dropping of the coupler 103. There was a fear.

上述のカプラの導電端子の直接加工もしくは変形させる固定に代るものとして、近年、実装基板(もしくはヒートシンク)を挟み込んで固定するカプラ(コネクタ)が採用されている。すなわち、オス端子とメス端子の結合で固定するカプラ(参照:特許文献1)、クリップで挟み込んで固定するカプラ(参照:特許文献2)、アタッチメントで挟み込んで固定するカプラ(参照:特許文献3)、あるいは板ばねで固定するカプラ(参照:特許文献4)がある。いずれも固定と給電とを同時に行う。
特開2007−194172号公報 特開2007−207594号公報 特開2007−242267号公報 特開2007−200697号公報
In recent years, couplers (connectors) that sandwich and fix a mounting substrate (or heat sink) have been employed as an alternative to the above-described direct processing or deformation of the conductive terminals of the coupler. That is, a coupler that is fixed by coupling a male terminal and a female terminal (see: Patent Document 1), a coupler that is sandwiched and fixed by a clip (see: Patent Document 2), and a coupler that is sandwiched and fixed by an attachment (see: Patent Document 3). Alternatively, there is a coupler that is fixed by a leaf spring (see Patent Document 4). In both cases, fixing and feeding are performed simultaneously.
JP 2007-194172 A JP 2007-207594 A JP 2007-242267 A JP 2007-200757 A

しかしながら、オス端子、メス端子の結合によるカプラ固定では、接合面積を大きくできず、この結果、オス端子、メス端子の抜き差しにより実装基板側のオス端子が剥れることがある。また、クリップによるカプラ固定もしくはアタッチメントによるカプラ固定においては、エンジン振動によりクリップもしくはアタッチメントが振動して給電が絶たれる。さらに、板ばねによるカプラ固定では、板ばねは高温環境下で脆弱となり、しかも一点接触のために、経時的変化すると接点不良を起こして給電が絶たれる。いずれの場合も、点灯/不灯の繰り返しが発生し、車両事故につながる可能性があるという課題がある。   However, when the coupler is fixed by coupling the male terminal and the female terminal, the bonding area cannot be increased. As a result, the male terminal on the mounting board side may be peeled off by the insertion / removal of the male terminal and the female terminal. Also, in coupler fixing by a clip or coupler fixing by an attachment, the clip or attachment vibrates due to engine vibration and power supply is cut off. Further, when the coupler is fixed by a leaf spring, the leaf spring becomes fragile in a high temperature environment, and furthermore, because of a single point contact, if it changes with time, a contact failure occurs and power supply is cut off. In either case, there is a problem that repeated lighting / non-lighting may occur, leading to a vehicle accident.

上述の課題を解決するために、本発明に係る光半導体装置モジュールは、上面に発光部を有する光半導体装置と、光半導体装置を搭載し、光半導体装置に接続される配線パターン層を有する支持基体と、支持基体を圧入して固定するカプラとを具備し、カプラは配線パターン層に接触するための給電凹凸部を有するものである。これにより、カプラの給電凹凸部と配線パターン層とは2次元的多点接触となり、その接合面積が大きくなり、この結果、支持基体とカプラとの接合は強固となる。   In order to solve the above-described problems, an optical semiconductor device module according to the present invention includes an optical semiconductor device having a light emitting portion on an upper surface, and a support having a wiring pattern layer mounted with the optical semiconductor device and connected to the optical semiconductor device. The substrate includes a base and a coupler that press-fits and fixes the support base, and the coupler has a power supply uneven portion for contacting the wiring pattern layer. As a result, the power supply uneven portion of the coupler and the wiring pattern layer are in a two-dimensional multipoint contact, and the bonding area thereof is increased. As a result, the bonding between the support base and the coupler becomes strong.

また、給電凹凸部はその表面に金属被膜を有し、配線パターン層はその表面に前記金属被膜と同一の材料からなる金属被膜を有する。この結果、給電凹凸部と配線パターン層とは給電凹凸部の金属被膜と配線パターン層の金属被膜との拡散接合により接合され、支持基体とカプラとの接合はより強固となる。   The power supply uneven portion has a metal film on the surface, and the wiring pattern layer has a metal film made of the same material as the metal film on the surface. As a result, the power supply uneven portion and the wiring pattern layer are joined by diffusion bonding of the metal film of the power supply uneven portion and the metal film of the wiring pattern layer, and the connection between the support base and the coupler becomes stronger.

本発明によれば、支持基体とカプラとの接合が強固となるので、点灯/不灯の繰り返しを防止できる。   According to the present invention, since the bonding between the support base and the coupler is strengthened, it is possible to prevent repeated lighting / unlighting.

図1は本発明に係る光半導体装置モジュールの実施の形態を示し、(A)は分解斜視図、(B)は組立斜視図である。   1A and 1B show an embodiment of an optical semiconductor device module according to the present invention, where FIG. 1A is an exploded perspective view and FIG. 1B is an assembled perspective view.

図1において、LED1は上面に発光部を有し、その両端にアノード、カソードのためのリードフレーム1a、1bを有する。   In FIG. 1, the LED 1 has a light emitting portion on the upper surface, and has lead frames 1a and 1b for anode and cathode at both ends thereof.

実装基板2はLED1を搭載するものであり、放熱性の良い金属層21、絶縁層22、レジスト層23及び配線パターン層24a、24bよりなる。この金属層21はたとえば加工性、量産性からCu、Al等よりなる。レジスト層23に開口された箇所に配線パターン層24a、24bが形成されており、配線パターン層24a、24bは35〜100μm厚さの銅(Cu)箔及び金(Au)メッキ、錫(Sn)メッキあるいはこれらの合金による金属被膜よりなる。後述のねじを挿入するための螺穴2a、2b、2c、2dを設けてある。   The mounting substrate 2 mounts the LED 1 and includes a metal layer 21 with good heat dissipation, an insulating layer 22, a resist layer 23, and wiring pattern layers 24a and 24b. This metal layer 21 is made of, for example, Cu, Al or the like because of workability and mass productivity. Wiring pattern layers 24a and 24b are formed at locations opened in the resist layer 23. The wiring pattern layers 24a and 24b are made of copper (Cu) foil and gold (Au) plating having a thickness of 35 to 100 μm, and tin (Sn). It consists of plating or a metal coating made of these alloys. Screw holes 2a, 2b, 2c, and 2d for inserting screws to be described later are provided.

尚、実装基板2の代りにヒートシンク等の放熱体を用いてもよい。   A heat radiator such as a heat sink may be used instead of the mounting substrate 2.

実装基板2にはLED1を搭載しやすくするために搭載位置のレジスト層23を開口してあり、この搭載位置に熱伝導性接着剤(シリコーン放熱性グリース層)3を塗布してからLED1を実装基板2に搭載する。   In order to make it easier to mount the LED 1 on the mounting substrate 2, a resist layer 23 at the mounting position is opened, and a heat conductive adhesive (silicone heat dissipation grease layer) 3 is applied to the mounting position before mounting the LED 1. Mounted on the substrate 2.

板ばね4a、4b(図1の(A)に図示せず、図1の(B)に図示)はLED1を実装基板2に固定すると共に、給電するために導電性を有する。この板ばね4a、4bは絶縁加工されたねじ5a、5bによって実装基板2の螺穴2a、2bに固定される。このとき、LED1の配光特性を変化させないために、板ばね4a、4bはLED1の発光部より下側に位置し、また、ばね作用をさせるために、板ばね4a、4b特にばね作用をする部分は薄い方が好ましい。しかし、実装基板2の固定方法は板ばね4a、4b以外にも、AuワイヤーやAIワイヤーによるワイヤーボンディングでもよい。   The leaf springs 4a and 4b (not shown in FIG. 1A and shown in FIG. 1B) fix the LED 1 to the mounting substrate 2 and have conductivity to supply power. The leaf springs 4a and 4b are fixed to the screw holes 2a and 2b of the mounting board 2 by insulating screws 5a and 5b. At this time, the leaf springs 4a and 4b are positioned below the light emitting portion of the LED 1 so as not to change the light distribution characteristics of the LED 1, and the leaf springs 4a and 4b are particularly spring-acting in order to act as a spring. The part is preferably thinner. However, the mounting method of the mounting substrate 2 may be wire bonding using Au wires or AI wires in addition to the leaf springs 4a and 4b.

実装基板2はカプラ6に圧入され、これにより、カプラ6は実装基板2を挟み込んで固定する。また、カプラ6は絶縁加工されたねじ7a、7bを固定部材8a、8bを介して実装基板2の螺穴2c、2dに固定される。尚、固定部材8a、8bは耐熱性樹脂あるいは金属よりなる。   The mounting board 2 is press-fitted into the coupler 6, whereby the coupler 6 sandwiches and fixes the mounting board 2. Further, the coupler 6 is fixed to the screw holes 2c and 2d of the mounting substrate 2 via the fixing members 8a and 8b with the insulated screws 7a and 7b. The fixing members 8a and 8b are made of heat resistant resin or metal.

図2は図1の板ばね4a、4bを説明するための図であり、(A)は上面図、(B)は(A)のB−B’線断面図、(C)は(A)のC−C’線断面図、(D)は(A)のD−D’線断面図である。   2A and 2B are diagrams for explaining the leaf springs 4a and 4b of FIG. 1, in which FIG. 2A is a top view, FIG. 2B is a cross-sectional view along line BB ′ in FIG. CC 'line sectional drawing of (A), (D) is DD' line sectional drawing of (A).

図2に示すように、各板ばね4a、4bはばね作用をする複数たとえば5個の薄い短冊状端子401、402、403、404、405を有する。短冊状端子401、402、403、404、405の長さL、L、L、L、Lは、互いに異なる。たとえば、
= 1mm
= 2mm
= 3mm
= 4mm
= 5mm
である。これにより、各短冊状端子401、402、403、404、405の固有振動数が相異なるようにしてある。ここで、各短冊状端子401、402、403、404、405の一片方が固定端、他片方が支持はりとなっているので、固有振動数fは、
f = kn 2/2πL2 × (EI/ρA)1/2 (1)
但し、knはn次振動の定数であって、k1=3.927、k2=7.069、k3=10.210、・・・、
Lは短冊状端子の長さ、
Eは短冊状端子のヤング率、
Iは短冊状端子の断面2次モーメント、
ρは短冊状端子の密度、
Aは短冊状端子の断面積
である。従って、短冊状端子の材質をCu、厚さを1mm、幅を1mmとすると、
= 1.8L (2)
= 2.6L (3)
= 3.4L (4)
= 4.2L (5)
のときに、短冊状端子401、402、403、404、405は同時に振動し、つまり、共振し、LED1の脱落、点灯/不灯の繰返し等の不具合が発生する。しかし、図2の場合には、長さL、L、L、L、Lを相異ならせるが、式(2)、(3)、(4)、(5)を成立させないようにする。たとえば、上述のごとく、L= 1mm、L= 2mm、L= 3mm、L= 4mm、L= 5mmとすれば、式(2)、(3)、(4)、(5)は成立せず、この結果、短冊状端子401、402、403、404、405の同時振動(共振)は抑制される。
As shown in FIG. 2, each leaf spring 4a, 4b has a plurality of, for example, five thin strip-shaped terminals 401, 402, 403, 404, 405 that act as springs. The lengths L 1 , L 2 , L 3 , L 4 , and L 5 of the strip-shaped terminals 401, 402, 403, 404, and 405 are different from each other. For example,
L 1 = 1mm
L 2 = 2mm
L 3 = 3mm
L 4 = 4mm
L 5 = 5mm
It is. Thereby, the natural frequency of each strip-shaped terminal 401, 402, 403, 404, 405 is made different. Here, since one of the strip-shaped terminals 401, 402, 403, 404, and 405 is a fixed end and the other is a supporting beam, the natural frequency f is
f = k n 2 / 2πL 2 × (EI / ρA) 1/2 (1)
Where k n is a constant of the n th order vibration, k 1 = 3.927, k 2 = 7.069, k 3 = 10.210,.
L is the length of the strip terminal,
E is the Young's modulus of the strip terminal,
I is the moment of inertia of the strip-shaped terminal,
ρ is the density of strip terminals,
A is a cross-sectional area of the strip-shaped terminal. Therefore, if the material of the strip-shaped terminal is Cu, the thickness is 1 mm, and the width is 1 mm,
L 2 = 1.8L 1 (2)
L 3 = 2.6L 1 (3)
L 4 = 3.4 L 1 (4)
L 5 = 4.2L 1 (5)
In this case, the strip-shaped terminals 401, 402, 403, 404, and 405 vibrate simultaneously, that is, resonate, and problems such as LED1 dropping and repeated lighting / unlighting occur. However, in the case of FIG. 2, the lengths L 1 , L 2 , L 3 , L 4 , and L 5 are made different, but the expressions (2), (3), (4), and (5) are not satisfied. Like that. For example, as described above, if L 1 = 1 mm, L 2 = 2 mm, L 3 = 3 mm, L 4 = 4 mm, and L 5 = 5 mm, equations (2), (3), (4), (5) As a result, simultaneous vibration (resonance) of the strip-shaped terminals 401, 402, 403, 404, and 405 is suppressed.

尚、図2においては、少なくとも2つの短冊状端子の長さを相異ならせれば、板ばねの振動を抑制できる。また、板ばね4aの短冊状端子401、402、403、404、405と板ばね4bの短冊状端子401、402、403、404、405とがLED1に対して点対称に配置することができる。これにより、板ばね4aのある短冊状端子が振動すると、LED1に対して一対角線上に位置する板ばね4bの短冊状端子が振動するが、他の対角線上に位置する短冊状端子は振動しない。さらに、各板ばね4a、4bの短冊状端子401、402、403、404、405の長さの代りに金属材質を互いに異ならせることもできる。たとえば、加工性、導電率(抵抗率)等から、
401:銅
402:アルミニウム
403:SUS304
404:金
405:銀
である。材質を相異ならせると、ヤング率Eが相異なり、上述の(1)式から、各短冊状端子401、402、403、404、405の固有振動数が相異なる。この場合も、少なくとも2つの短冊状端子の材料を相異ならせてもよく、また、板ばね4aの短冊状端子と板ばね4bの短冊状端子とはLED1に対して点対称に配置してもよい。さらに、短冊状端子の材質を異ならせる代りに、長さ以外の短冊状端子の幾何学形状たとえば厚さもしくは断面積を異ならせることもできる。これにより、式(1)の断面2次モーメントI、断面積Aが異なることになり、この結果、式(1)の固有振動数が異なることになるからである。
In FIG. 2, the vibration of the leaf spring can be suppressed if the lengths of at least two strip-like terminals are different. Further, the strip-shaped terminals 401, 402, 403, 404, and 405 of the leaf spring 4a and the strip-shaped terminals 401, 402, 403, 404, and 405 of the leaf spring 4b can be arranged point-symmetrically with respect to the LED1. Thus, when the strip-shaped terminal with the leaf spring 4a vibrates, the strip-shaped terminal of the leaf spring 4b located on a pair of diagonal lines with respect to the LED 1 vibrates, but the strip-shaped terminals located on other diagonal lines do not vibrate. . Furthermore, instead of the length of the strip terminals 401, 402, 403, 404, 405 of the leaf springs 4a, 4b, the metal materials can be made different from each other. For example, from workability, conductivity (resistivity), etc.
401: Copper 402: Aluminum 403: SUS304
404: Gold 405: Silver. When the materials are different, the Young's modulus E is different, and the natural frequencies of the respective strip-shaped terminals 401, 402, 403, 404, and 405 are different from the above equation (1). Also in this case, the materials of at least two strip terminals may be different from each other, and the strip terminals of the leaf spring 4a and the strip terminals of the leaf spring 4b may be arranged symmetrically with respect to the LED 1. Good. Further, instead of changing the material of the strip-shaped terminal, the geometric shape of the strip-shaped terminal other than the length, for example, the thickness or the cross-sectional area can be varied. This is because the sectional secondary moment I and the sectional area A of the equation (1) are different, and as a result, the natural frequency of the equation (1) is different.

また、図2において、板ばね4a、4bの実装基板2への固定をねじ5a、5bで行っているが、リベットを挿入して加締めたもの、圧入ピンを挿入したもの、フック部材を実装基板2の溝にかみ込ませたものでもよい。   In FIG. 2, the leaf springs 4a and 4b are fixed to the mounting substrate 2 with screws 5a and 5b. The rivets are inserted and crimped, the press-fit pins are inserted, and the hook members are mounted. It may be bitten in the groove of the substrate 2.

図3は図1のカプラを説明するための図であり、(A)はカプラ近傍の上面図、(B)は(A)のB−B’線断面図、(C)は(A)のC−C’線断面図である。   3A and 3B are diagrams for explaining the coupler of FIG. 1. FIG. 3A is a top view in the vicinity of the coupler, FIG. 3B is a cross-sectional view taken along line BB ′ in FIG. It is CC 'sectional view taken on the line.

図3に示すように、カプラ6は、上部61U、下部61L、上部61U、下部61Lを結合する底部61Bよりなるハウジング61と、ハウジング61の上部61Uに固定された給電凹凸部62a、62bとにより構成されている。   As shown in FIG. 3, the coupler 6 includes a housing 61 including a bottom 61B that joins an upper portion 61U, a lower portion 61L, an upper portion 61U, and a lower portion 61L, and power supply uneven portions 62a and 62b fixed to the upper portion 61U of the housing 61. It is configured.

ハウジング61は非導電性かつ耐熱性の樹脂もしくはセラミックよりなる。たとえば、ポリフェニレンスルフィド(PPS)、ポリカードネート、カプトン素材、アルミナ、AlNよりなる。   The housing 61 is made of a nonconductive and heat resistant resin or ceramic. For example, it is made of polyphenylene sulfide (PPS), polycardinate, kapton material, alumina, and AlN.

給電凹凸部62a、62bはばね性及び導電性を有するりん青銅、黄銅等の銅(Cu)合金に金(Au)メッキ、錫(Sn)メッキもしくはこれらの合金よりなる金属被膜を施したもので、表面が細かい0.1mmオーダの凹凸形状をなしている。この凹凸形状は円抜加工、成形プレス加工、射出成形等によって予め形成しておく。   The power supply irregularities 62a and 62b are made by applying gold (Au) plating, tin (Sn) plating or a metal film made of these alloys to a copper (Cu) alloy such as phosphor bronze or brass having springiness and conductivity. The surface has a fine uneven shape of the order of 0.1mm. This uneven shape is formed in advance by circle punching, molding press processing, injection molding or the like.

給電凹凸部62a、62bはハウジング61の樹脂もしくはセラミックとモールド形成するか、あるいは、嵌め込む。   The power supply uneven portions 62a and 62b are molded or fitted with resin or ceramic of the housing 61.

実装基板2をカプラ6に圧入すると、実装基板2の配線パターン層24a、24bの金属被膜の酸化膜及び給電凹凸部62a、62bの金属被膜の酸化膜が破壊され、これら2つの金属被膜の金、錫もしくはこれらの合金が圧入の際の発生する摩擦熱により拡散接合する。このとき、給電凹凸部62a、62bのばね性により圧力状態となり、上述の拡散接合を促進させる。   When the mounting board 2 is press-fitted into the coupler 6, the metal film oxide film of the wiring pattern layers 24 a and 24 b of the mounting board 2 and the metal film oxide film of the power supply uneven portions 62 a and 62 b are destroyed. , Tin or an alloy thereof is diffusion bonded by frictional heat generated during press-fitting. At this time, it becomes a pressure state by the spring property of the power supply uneven portions 62a and 62b, and promotes the above-described diffusion bonding.

金は融点1064℃と高いが、自己拡散係数が大きいので拡散接合し易い。特に、金単体同士の拡散接合は非常に熱に強くヒートショック等のクラックも低減できる。他方、錫は融点232℃と低く、自己拡散係数が大きいので、拡散接合し易い。   Gold has a high melting point of 1064 ° C, but has a large self-diffusion coefficient and is easy to be diffusion bonded. In particular, the diffusion bonding between simple gold is extremely resistant to heat and can reduce cracks such as heat shock. On the other hand, since tin has a low melting point of 232 ° C. and a large self-diffusion coefficient, it is easy to perform diffusion bonding.

さらに、実装基板2をカプラ6に封入後に、たとえば約150℃で数時間のアニール処理を行うと、拡散接合が促進される。   Furthermore, if the mounting substrate 2 is sealed in the coupler 6 and then annealed at, for example, about 150 ° C. for several hours, diffusion bonding is promoted.

このように、本発明の実施の形態においては、カプラ6の電気的接続は給電凹凸部62a、62bによって行い、カプラ6の機械的固定はボルト7a、7bによって行うことにより、接点不良、カプラ6の脱落等の不具合を回避できると共に、高信頼性の給電が可能となる。   As described above, in the embodiment of the present invention, the electrical connection of the coupler 6 is performed by the power supply uneven portions 62a and 62b, and the mechanical fixing of the coupler 6 is performed by the bolts 7a and 7b. In addition, it is possible to avoid problems such as dropouts and to supply power with high reliability.

図4は図1のカプラの第1の変更例を示す断面図であって、図3の(B)に相当する。すなわち、図3のねじ7a、7bの代りに、耐熱性樹脂もしくは金属よりなるリベット7a−1、7b−1を挿入してその先端部を加締めたものである。   FIG. 4 is a cross-sectional view showing a first modification of the coupler of FIG. 1 and corresponds to FIG. That is, rivets 7a-1 and 7b-1 made of heat-resistant resin or metal are inserted in place of the screws 7a and 7b in FIG.

また、図5は図1のカプラの第2の変更例を示す断面図であって、図3の(B)に相当する。すなわち、図3のねじ7a、7bの代りに、圧入ピン7a−2、7b−2を挿入したものである。   FIG. 5 is a cross-sectional view showing a second modification of the coupler of FIG. 1, and corresponds to FIG. That is, press-fit pins 7a-2 and 7b-2 are inserted in place of the screws 7a and 7b in FIG.

さらに、図6は図1のカプラの第3の変更例を示す断面図であって、図3の(B)に相当する。すなわち、図3のねじ7a、7bの代りに、固定凹凸部62cを設けてある。固定凹凸部62cは給電凹凸部62a、62bと同時に形成され、従って、給電凹凸部62a、62bと同一材料よりなる。しかし、固定凹凸部62cは、給電凹凸部62a、62bと異なり、配線パターン層24a、24bに接続されない。   Further, FIG. 6 is a cross-sectional view showing a third modification of the coupler of FIG. 1, and corresponds to FIG. That is, instead of the screws 7a and 7b in FIG. 3, a fixed uneven portion 62c is provided. The fixed concavo-convex portion 62c is formed at the same time as the power supply concavo-convex portions 62a and 62b, and is therefore made of the same material as the power supply concavo-convex portions 62a and 62b. However, unlike the power supply uneven portions 62a and 62b, the fixed uneven portion 62c is not connected to the wiring pattern layers 24a and 24b.

このように、カプラ6の機械的固定は、ねじ7a、7b、リベット7a−1、7b−1、圧入ピン7a−2、7b−2、あるいは固定凹凸部62cによって行われる。   Thus, the mechanical fixing of the coupler 6 is performed by the screws 7a and 7b, the rivets 7a-1 and 7b-1, the press-fit pins 7a-2 and 7b-2, or the fixing uneven portion 62c.

図7は図1のカプラの第4の変更例を示す断面図であって、図3の(C)に相当する。すなわち、図3のハウジング61の下部61Lを下部61L’に変更し、フック61Hを設けると共に、実装基板2の裏面に溝を設ける。これにより、カプラ6の機械的固定をフック61Hを実装基板2の溝にかみ込むようにして行うことができ、このとき、フック61Hは給電凹凸部62a、62bの延長部のばねによって押圧される。これにより、接点不良、カプラ6の脱落等の不具合を回避できる。尚、図7の第4の変更例は、図4、図5、図6の第1、第2、第3の変更例と組み合わせることもできる。   FIG. 7 is a cross-sectional view showing a fourth modification of the coupler of FIG. 1, and corresponds to (C) of FIG. That is, the lower part 61L of the housing 61 in FIG. 3 is changed to a lower part 61L ′, a hook 61H is provided, and a groove is provided on the back surface of the mounting substrate 2. As a result, the coupler 6 can be mechanically fixed by engaging the hook 61H in the groove of the mounting substrate 2, and at this time, the hook 61H is pressed by the springs of the extension portions of the power supply uneven portions 62a and 62b. As a result, it is possible to avoid problems such as contact failure and dropout of the coupler 6. The fourth modification example in FIG. 7 can be combined with the first, second, and third modification examples in FIGS. 4, 5, and 6.

本発明に係る光半導体装置モジュールの実施の形態を示し、(A)は斜視図、(B)は組立斜視図である。1 shows an embodiment of an optical semiconductor device module according to the present invention, wherein (A) is a perspective view and (B) is an assembled perspective view. 図1の板ばね4a、4bを説明するための図であり、(A)は上面図、(B)は(A)のB−B’線断面図、(C)は(A)のC−C’線断面図、(D)は(A)のD−D’線断面図である。It is a figure for demonstrating the leaf | plate springs 4a and 4b of FIG. 1, (A) is a top view, (B) is BB 'sectional drawing of (A), (C) is C- of (A). C 'sectional view, (D) is a DD' sectional view of (A). 図1のカプラを説明するための図であり、(A)はカプラ近傍の上面図、(B)は(A)のB−B’線断面図、(C)は(A)のC−C’線断面図である。It is a figure for demonstrating the coupler of FIG. 1, (A) is a top view of the coupler vicinity, (B) is BB 'sectional view taken on the line of (A), (C) is CC of (A). FIG. 図1のカプラの第1の変更例を示す断面図である。It is sectional drawing which shows the 1st modification of the coupler of FIG. 図1のカプラの第2の変更例を示す断面図である。It is sectional drawing which shows the 2nd modification of the coupler of FIG. 図1のカプラの第3の変更例を示す断面図である。It is sectional drawing which shows the 3rd modification of the coupler of FIG. 図1のカプラの第4の変更例を示す断面図である。It is sectional drawing which shows the 4th modification of the coupler of FIG. 従来の光半導体装置モジュールを示す断面図である。It is sectional drawing which shows the conventional optical semiconductor device module. 図8のカプラの固定を説明する断面図である。It is sectional drawing explaining fixation of the coupler of FIG.

符号の説明Explanation of symbols

1:LED
1a、1b:リードフレーム
2:実装基板
2a、2b、2c、2d:螺穴
3:熱伝導性接着剤
4a、4b:板ばね
6:カプラ
7a、7b:ねじ
8a、8b:固定部材
21:金属層
22:絶縁層
23:レジスト層
24a、24b:配線パターン層
61:ハウジング
61U:上部
61L、61L’:下部
61H:フック
61B:底部
62a、62b:給電凹凸部
62c:固定凹凸部
1: LED
1a, 1b: lead frame 2: mounting substrate 2a, 2b, 2c, 2d: screw hole 3: thermally conductive adhesive 4a, 4b: leaf spring 6: coupler 7a, 7b: screw 8a, 8b: fixing member 21: metal Layer 22: insulating layer 23: resist layer 24a, 24b: wiring pattern layer 61: housing 61U: upper part 61L, 61L ': lower part 61H: hook 61B: bottom part 62a, 62b: power supply uneven part 62c: fixed uneven part

Claims (9)

上面に発光部を有する光半導体装置と、
該光半導体装置を搭載し、該光半導体装置に接続される配線パターン層を有する支持基体と、
該支持基体を圧入して固定するカプラと
を具備し、
前記カプラは前記配線パターン層に接触するための給電凹凸部を有する光半導体装置モジュール。
An optical semiconductor device having a light emitting portion on the upper surface;
A support substrate having the wiring pattern layer mounted thereon and connected to the optical semiconductor device;
A coupler for press-fitting and fixing the support substrate,
The coupler is an optical semiconductor device module having a power supply uneven portion for contacting the wiring pattern layer.
前記給電凹凸部はばね性及び導電性を有する材料である請求項1に記載の光半導体装置モジュール。   The optical semiconductor device module according to claim 1, wherein the power supply uneven portion is a material having springiness and conductivity. 前記給電凹凸部はその表面に金属被膜を有する請求項1に記載の光半導体装置モジュール。   The optical semiconductor device module according to claim 1, wherein the power supply uneven portion has a metal film on a surface thereof. 前記金属被膜は金(Au)、錫(Sn)及びこれらの合金の1つである請求項3に記載の光半導体装置モジュール。   The optical semiconductor device module according to claim 3, wherein the metal film is one of gold (Au), tin (Sn), and an alloy thereof. 前記配線パターン層はその表面に前記金属被膜と同一の材料からなる金属被膜を有し、前記給電凹凸部と前記配線パターン層とは該給電凹凸部の金属被膜と該配線パターン層の金属被膜との拡散接合により接合された請求項3に記載の光半導体装置モジュール。   The wiring pattern layer has a metal film made of the same material as the metal film on the surface, and the power supply uneven part and the wiring pattern layer are a metal film of the power supply uneven part and a metal film of the wiring pattern layer. The optical semiconductor device module according to claim 3, which is bonded by diffusion bonding. さらに、前記光半導体装置を前記支持基体に固定しかつ前記光半導体装置に給電するための導電性の板ばねを具備し、
前記板ばねは複数の短冊状端子よりなり、該複数の短冊状端子の少なくとも2つの短冊状端子の固有振動数が相異なる光半導体装置モジュール。
Furthermore, it comprises a conductive leaf spring for fixing the optical semiconductor device to the support base and supplying power to the optical semiconductor device,
The leaf spring is composed of a plurality of strip-shaped terminals, and an optical semiconductor device module having different natural frequencies of at least two strip-shaped terminals of the plurality of strip-shaped terminals.
前記支持基体は金属性基板である請求項1に記載の光半導体装置モジュール。   The optical semiconductor device module according to claim 1, wherein the support base is a metallic substrate. 前記カプラは、さらに、前記給電凹凸部を固定するためのハウジングを有し、該ハウジングは機械的固定手段によって前記支持基体に固定された請求項1に記載の光半導体装置モジュール。   The optical semiconductor device module according to claim 1, wherein the coupler further includes a housing for fixing the power feeding uneven portion, and the housing is fixed to the support base by a mechanical fixing means. 前記支持基体の裏面に溝を設け、前記機械的固定手段を該支持基体の溝にかみ込むようにした請求項8に記載の光半導体装置モジュール。
9. The optical semiconductor device module according to claim 8, wherein a groove is provided on a back surface of the support base, and the mechanical fixing means is inserted into the groove of the support base.
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JP2011258606A (en) * 2010-06-04 2011-12-22 Mitsubishi Chemicals Corp Led light emitting element and led light emitting device
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JP2019117837A (en) * 2017-12-26 2019-07-18 シーシーエス株式会社 Light-emitting device

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JP2007200697A (en) * 2006-01-26 2007-08-09 Koito Mfg Co Ltd Vehicular lamp
JP2008016362A (en) * 2006-07-07 2008-01-24 Koito Mfg Co Ltd Light-emitting module and vehicular lighting fixture

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Publication number Priority date Publication date Assignee Title
JP2005056605A (en) * 2003-08-06 2005-03-03 Molex Japan Co Ltd Connector, cable or wiring board joined to connector
JP2005317262A (en) * 2004-04-27 2005-11-10 Hirose Electric Co Ltd Connector for card and contact terminal for card to be used for the connector
JP2007200697A (en) * 2006-01-26 2007-08-09 Koito Mfg Co Ltd Vehicular lamp
JP2008016362A (en) * 2006-07-07 2008-01-24 Koito Mfg Co Ltd Light-emitting module and vehicular lighting fixture

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Publication number Priority date Publication date Assignee Title
JP2011258606A (en) * 2010-06-04 2011-12-22 Mitsubishi Chemicals Corp Led light emitting element and led light emitting device
CN103026804A (en) * 2010-08-02 2013-04-03 奥斯兰姆奥普托半导体有限责任公司 Optoelectronic lighting module and motor vehicle headlight
JP2013534354A (en) * 2010-08-02 2013-09-02 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Optoelectronics light emitting module and headlight for automobile
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JP7007180B2 (en) 2017-12-26 2022-01-24 シーシーエス株式会社 Luminescent device

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