JP2010029871A5 - - Google Patents

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JP2010029871A5
JP2010029871A5 JP2008191531A JP2008191531A JP2010029871A5 JP 2010029871 A5 JP2010029871 A5 JP 2010029871A5 JP 2008191531 A JP2008191531 A JP 2008191531A JP 2008191531 A JP2008191531 A JP 2008191531A JP 2010029871 A5 JP2010029871 A5 JP 2010029871A5
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bonding film
bonding
film
metal atom
substrate
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JP2008191531A
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JP2010029871A (en
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Claims (16)

第1の基材上に、第1の金属原子と、該第1の金属原子よりもイオン化傾向が大きい第2の金属原子と、有機成分で構成される脱離基とを含む第1の接合膜を形成して第1の接合膜付き基材を得るとともに、第2の基材上に、前記第1の金属原子と、前記第2の金属原子と、前記脱離基とを含む第2の接合膜を形成して第2の接合膜付き基材を得る工程と、
前記第1の接合膜および前記第2の接合膜に対してエネルギーを付与して、前記第1の接合膜および前記第2の接合膜の表面付近に存在する前記脱離基をこれら接合膜から脱離させることにより、前記第1の接合膜および前記第2の接合膜に接着性を発現させる工程と、
前記第1の接合膜と前記第2の接合膜とが密着するように、前記第1の接合膜付き基材と前記第2の接合膜付き基材とを貼り合わせて、前記第1の接合膜と前記第2の接合膜とが接合された接合体を得る工程とを有することを特徴とする接合方法。
A first junction including a first metal atom, a second metal atom having a higher ionization tendency than the first metal atom, and a leaving group composed of an organic component on the first substrate. Forming a film to obtain a first substrate with a bonding film, and comprising a second substrate containing the first metal atom, the second metal atom, and the leaving group on a second substrate; Forming a second bonding film to obtain a second substrate with a bonding film;
Energy is imparted to the first bonding film and the second bonding film, and the leaving group existing near the surfaces of the first bonding film and the second bonding film is removed from these bonding films. Causing the first bonding film and the second bonding film to exhibit adhesion by desorption, and
The first bonding film and the second bonding film-attached substrate are bonded together so that the first bonding film and the second bonding film are in close contact with each other, and the first bonding is performed. And a step of obtaining a bonded body in which the film and the second bonding film are bonded.
第1の基材上に、第1の金属原子と、該第1の金属原子よりもイオン化傾向が大きい第2の金属原子と、有機成分で構成される脱離基とを含む第1の接合膜を形成して第1の接合膜付き基材を得るとともに、第2の基材上に、前記第1の金属原子と、前記第2の金属原子と、前記脱離基とを含む第2の接合膜を形成して第2の接合膜付き基材を得る工程と、
前記第1の接合膜と前記第2の接合膜とが密着するように、前記第1の接合膜付き基材と前記第2の接合膜付き基材とを重ね合わせて、積層体を得る工程と、
前記第1の接合膜および前記第2の接合膜に対してエネルギーを付与して、前記第1の接合膜および前記第2の接合膜の表面付近に存在する前記脱離基を、これら接合膜から脱離させることにより、前記第1の接合膜および前記第2の接合膜に接着性を発現させて、前記第1の接合膜と前記第2の接合膜とが接合された接合体を得る工程とを有することを特徴とする接合方法。
A first junction including a first metal atom, a second metal atom having a higher ionization tendency than the first metal atom, and a leaving group composed of an organic component on the first substrate. Forming a film to obtain a first substrate with a bonding film, and comprising a second substrate containing the first metal atom, the second metal atom, and the leaving group on a second substrate; Forming a second bonding film to obtain a second substrate with a bonding film;
A step of obtaining a laminate by superimposing the first substrate with a bonding film and the second substrate with a bonding film so that the first bonding film and the second bonding film are in close contact with each other. When,
Energy is imparted to the first bonding film and the second bonding film, and the leaving group present in the vicinity of the surfaces of the first bonding film and the second bonding film is converted into these bonding films. By desorbing from the first bonding film, the first bonding film and the second bonding film are made to exhibit adhesiveness, and a bonded body in which the first bonding film and the second bonding film are bonded is obtained. A bonding method comprising the steps of:
前記第1の接合膜および前記第2の接合膜は、ともに、前記第1の金属原子を備える第1の有機金属材料と、前記第2の金属原子を備える第2の有機金属材料とを原材料として、有機金属化学気相成長法を用いて成膜される請求項1または2に記載の接合方法。   Both the first bonding film and the second bonding film are made from a first organometallic material comprising the first metal atom and a second organometallic material comprising the second metal atom. The bonding method according to claim 1, wherein the film is formed using a metal organic chemical vapor deposition method. 前記第1の接合膜および前記第2の接合膜は、ともに、低還元性雰囲気下で成膜される請求項3に記載の接合方法。   The bonding method according to claim 3, wherein both the first bonding film and the second bonding film are formed in a low reducing atmosphere. 前記脱離基は、前記第1の有機金属材料および前記第2の有機金属材料に含まれる有機物の一部が残存したものである請求項3または4に記載の接合方法。   5. The bonding method according to claim 3, wherein the leaving group is one in which a part of an organic substance contained in the first organometallic material and the second organometallic material remains. 前記脱離基は、炭素原子を必須成分とし、水素原子、窒素原子、リン原子、硫黄原子およびハロゲン原子のうちの少なくとも1種を含む原子団で構成される請求項3ないし5のいずれかに記載の接合方法。   6. The leaving group according to any one of claims 3 to 5, comprising a carbon atom as an essential component and an atomic group containing at least one of a hydrogen atom, a nitrogen atom, a phosphorus atom, a sulfur atom and a halogen atom. The joining method described. 前記脱離基は、アルキル基を含む請求項6に記載の接合方法。   The bonding method according to claim 6, wherein the leaving group includes an alkyl group. 前記第1の有機金属材料および前記第2の有機金属材料は、ともにβジケトン系錯体である請求項3ないし7のいずれかに記載の接合方法。   The joining method according to claim 3, wherein both the first organometallic material and the second organometallic material are β-diketone complexes. 前記第1の接合膜および前記第2の接合膜は、それぞれ、導電性を有する請求項1ないし8のいずれかに記載の接合方法。   The bonding method according to claim 1, wherein each of the first bonding film and the second bonding film has conductivity. 前記第1の金属原子は、銅、アルミニウムおよび銀のうちの少なくとも1種である請求項1ないし8のいずれかに記載の接合方法。   The bonding method according to claim 1, wherein the first metal atom is at least one of copper, aluminum, and silver. 前記第1の金属原子として銅を用いた時、前記第2の金属原子は、アルミニウム、亜鉛、鉄、ニッケル、鉛およびインジウムのうちの少なくとも1種である請求項10に記載の接合方法。   The bonding method according to claim 10, wherein when copper is used as the first metal atom, the second metal atom is at least one of aluminum, zinc, iron, nickel, lead, and indium. 前記第1の接合膜および前記第2の接合膜における前記第1の金属原子および前記第2の金属原子の合計と炭素原子との存在比は、それぞれ、3:7〜7:3である請求項1ないし11のいずれかに記載の接合方法。   The abundance ratio of the total of the first metal atoms and the second metal atoms to the carbon atoms in the first bonding film and the second bonding film is 3: 7 to 7: 3, respectively. Item 12. The joining method according to any one of Items 1 to 11. 前記第1の接合膜および前記第2の接合膜は、それぞれ、その少なくとも表面付近に存在する前記脱離基が、当該各接合膜から脱離した後に、活性手が生じる請求項1ないし12のいずれかに記載の接合方法。   13. The first bonding film and the second bonding film, respectively, wherein an active hand is generated after the leaving group existing at least near the surface of the first bonding film and the second bonding film are released from each bonding film. The joining method according to any one of the above. 前記活性手は、未結合手または水酸基である請求項13に記載の接合方法。   The joining method according to claim 13, wherein the active hand is a dangling bond or a hydroxyl group. 前記エネルギーの付与は、前記第1の接合膜および前記第2の接合膜にエネルギー線を照射する方法、前記第1の接合膜および前記第2の接合膜を加熱する方法、ならびに前記第1の接合膜および前記第2の接合膜に圧縮力を付与する方法のうちの少なくとも1つの方法により行う請求項1ないし14のいずれかに記載の接合方法。 The application of energy is performed by irradiating the first bonding film and the second bonding film with energy rays, heating the first bonding film and the second bonding film, and the first bonding film. bonding film and bonding method according to any one of claims 1 to 14 carried out by at least one of the methods for imparting a compressive force to the second bonding film. 請求項1ないし15のいずれかに記載の接合方法により接合されたことを特徴とする接合体。 Conjugate characterized in that it is joined by the bonding method according to any one of claims 1 to 15.
JP2008191531A 2008-07-24 2008-07-24 Joining method and joined body Withdrawn JP2010029871A (en)

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