JP2010010290A - Method and apparatus of manufacturing columnar crystal structure - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To form a catalyst material film in a short time when a nanocolumn formed to a GaNLED or the like is finally grown using the catalyst material film. <P>SOLUTION: A catalyst material film 12 is not formed by evaporative deposition and photolithography but directly formed as a thin film in a patterned state by storing a growth substrate 11 in a vacuum container 2, supplying a material gas from a gas supplying source 4, and then, in the atmosphere 7, focusing ion beam 6 to a column diameter of a nanocolumn to emit the ion beam 6 on the growth substrate 11 from a beam source 5. Therefore, after formation of the catalyst material film 12, the growth substrate 11 can be transferred into an MOCVD apparatus or an MBE apparatus or the like without being exposed in an atmosphere to grow the nanocolumn. Accordingly, by taking advantage of a merit of using the catalyst, that is, a merit that a position and a column diameter of the nanocolumn can be controlled, a high quality nanocolumn can be grown with a high throughput at low cost. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention is realized as a III-V compound semiconductor light-emitting device and the like, and a method and apparatus for manufacturing a semiconductor device in which a nanoscale columnar crystal structure called a nanocolumn or nanorod is formed on a substrate About.

  The semiconductor having the columnar crystal structure has very few threading dislocations in the crystal as compared with a conventional semiconductor using a so-called bulk crystal. When a light-emitting element is formed, non-radiative recombination due to the threading dislocation is formed. Has been attracting attention because it can improve the luminous efficiency. As a conventional example representative of a semiconductor light emitting device having the columnar crystal structure, for example, Patent Document 1 can be cited. In the conventional example, after forming an n-type GaN buffer layer on a sapphire substrate, a large number of the columnar crystal structures (nanocolumns) arranged in an array are formed. The nanocolumn is composed of an n-type GaN nanocolumn, an InGaN quantum well, and a p-type GaN nanocolumn.

  With this configuration, light emission with high luminance can be obtained from the columnar crystal structure. Further, the column diameter of the columnar crystal structure that affects the emission wavelength can be suppressed to a certain degree of variation by adjusting the growth conditions. However, its geometry remains random, self-organized. For this reason, it is the present situation that the expected light emission efficiency is not obtained because the columnar crystal structure in contact with the forest or the light generated from a certain thing is taken into the surroundings. .

Therefore, the applicant of the present application previously proposed Patent Document 2, the prior art uses a thin film that promotes growth called a catalyst, and forms the catalyst material film by vapor deposition or the like. By patterning so as to have a desired diameter at the position, the crystalline material is taken into the catalyst material film at the portion where the catalyst material film remains, and the columnar crystal structure grows efficiently only at that portion. It will be done.
JP 2005-228936 A JP 2008-34482 A

  The above-described conventional technique is an excellent technique in which the columnar crystal structure can be formed in a desired diameter at a desired position as described above. However, new problems arise in the process. Specifically, the catalyst thin film deposition process and the patterning photolithography process are performed in a vacuum container different from the nanocolumn crystal growth process, so that the growth substrate is formed before the nanocolumn crystal growth process. It will be affected by oxidation and pollution from atmospheric exposure. These effects cannot be completely wiped off even if a cleaning step is performed before crystal growth, and as a result, crystal quality is degraded. In addition, the patterning of catalyst requires nm-order lithography, and there is a problem that the patterning process cost is high.

  The objective of this invention is providing the manufacturing method and apparatus of a columnar crystal structure which can grow a high quality columnar crystal structure cheaply, making use of the advantage using a catalyst.

  The columnar crystal structure manufacturing method of the present invention forms a patterned catalyst material film on a growth substrate, and the material for forming the columnar crystal structure is taken into the catalyst material film to form a gap with the growth substrate. In the columnar crystal structure manufacturing method of forming the columnar crystal structure on the growth substrate by growing in a step, the catalyst material film is an ion beam, an electron beam or an electron beam in an atmosphere containing a material to be a catalyst. One of the laser beams is converged on the column diameter of the columnar crystal structure and irradiated onto the growth substrate, whereby patterning and thin film formation are performed.

  Further, the columnar crystal structure manufacturing apparatus of the present invention provides a columnar crystal structure that forms a catalyst material film that defines a position where the columnar crystal structure is to be grown when the columnar crystal structure is grown from a growth substrate. In the manufacturing apparatus, a vacuum container that accommodates the growth substrate, a gas supply source that supplies a gas containing a material serving as a catalyst in the vacuum container, an ion beam, an electron beam, or a laser beam that communicates with the vacuum container. Any one of them includes a beam source that converges on a column diameter of the columnar crystal structure and irradiates a position where the columnar crystal structure should grow on the growth substrate.

  According to the above configuration, a patterned catalyst material film is formed on a growth substrate in a semiconductor manufacturing method and apparatus realized as a group III-V compound semiconductor light emitting device or the like and having a columnar crystal structure on the growth substrate. In order to grow the columnar crystal structure by taking the material for forming the columnar crystal structure into the catalyst material film and growing it with the growth substrate, the catalyst material film is deposited and photolithography is performed. The growth substrate is housed in a vacuum vessel, a gas containing a material to be a catalyst is supplied from a gas supply source, and an ion beam, an electron beam, or a laser beam is supplied from the beam source in the atmosphere. By irradiating the growth substrate with one of them converged on the order of nm which is the column diameter of the columnar crystal structure The Catalyst material film, in a patterned state, directly forming a thin film.

  Therefore, a catalyst material film can be formed without a mask in an atmosphere maintained at a vacuum level similar to that of an MOCVD apparatus or an MBE apparatus, and the growth substrate is not exposed to the air after the formation of the catalyst material film. The columnar crystal structure can be grown by being carried into an MOCVD apparatus or an MBE apparatus. This makes it possible to grow a high-quality columnar crystal structure with high throughput and low cost while taking advantage of the use of a catalystist that the position and column diameter of the columnar crystal structure can be controlled. For example, it takes about 1 hour to grow a columnar crystal structure (about 1 μm) and about half a day to form an electrode on the columnar crystal structure. In the conventional electrode formation by vapor deposition and photolithography (exposure / development / etching), Similar to the electrode formation on the columnar crystal structure, about half a day was required. However, in the beam irradiation, the element formation time can be reduced to about half, for example, about 10 minutes for a 2-inch substrate. .

  Furthermore, the method for manufacturing a columnar crystal structure according to the present invention is characterized in that in addition to the beam scanning, at least one of movement and rotation of the growth substrate synchronized with the beam scanning is used.

  In the columnar crystal structure manufacturing apparatus of the present invention, the beam source can be scanned in the xy direction, the growth substrate is mounted, and the growth substrate is synchronized with the scanning of the beam source. It further includes a support base that performs at least one of movement in at least one of directions and rotation around the z-axis.

  According to the above configuration, in manufacturing a semiconductor having a columnar crystal structure, the growth process of the columnar crystal structure, particularly the catalyst material film forming step as described above, is likely to be a critical path for production. Therefore, the movement and rotation of the growth substrate are used in combination with the beam scanning.

  Therefore, a growth substrate having a large area can be used, the efficiency of forming this catalyst material film can be increased, and a high throughput and therefore a lower cost process can be realized.

  Furthermore, the columnar crystal structure manufacturing method of the present invention is characterized in that a plurality of the beams are used.

  In addition, the columnar crystal structure manufacturing apparatus of the present invention includes a plurality of the beam sources.

  According to the above configuration, by scanning a plurality of beams, it is possible to shorten the time for the catalyst material film forming step and to realize a high throughput and therefore a low-cost process.

  Furthermore, the columnar crystal structure manufacturing method of the present invention supports the growth substrate in a growth step of the columnar crystal structure so that the growth substrate is parallel to or perpendicular to gravity and the surface is directed in the direction of gravity. Features.

  According to said structure, adsorption | suction to the growth substrate surface of the foreign material in a vacuum vessel can be prevented, and crystal growth with fewer defects can be implement | achieved.

  In the columnar crystal structure manufacturing apparatus of the present invention, the formation of the catalyst material film and the growth of the columnar crystal structure are continuously performed in the vacuum vessel, or the vacuum for forming the catalyst material film is performed. The container and the vacuum container for growing the columnar crystal structure are provided separately, and both are connected by a vacuum passage.

  According to the above configuration, when the catalyst material film is formed and the columnar crystal structure is grown in the same vacuum vessel, or in a separate vacuum vessel, both are connected by a vacuum passageway. The columnar crystal structure can be continuously grown without exposing the growth substrate on which the catalyst material film is formed to the atmosphere, and the catalyst material film can be formed and the columnar crystal structure can be grown in an extremely clean environment. Can be done.

  The columnar crystal structure manufacturing method and apparatus of the present invention is realized as a group III-V compound semiconductor light-emitting element as described above, and in a semiconductor manufacturing method and apparatus having a columnar crystal structure on a growth substrate, A patterned catalyst material film is formed on a growth substrate, and a material for forming a columnar crystal structure is taken into the catalyst material film and grown with the growth substrate to grow the columnar crystal structure. In this case, the catalyst material film is not formed by vapor deposition and photolithography, but the growth substrate is housed in a vacuum vessel, a gas containing a material to be a catalyst is supplied from a gas supply source, and the beam is generated in the atmosphere. From the source, either an ion beam, an electron beam or a laser beam is applied to the order of nm which is the column diameter of the columnar crystal structure. By irradiating onto the growth substrate by the bundle, the Catalyst material film, in a patterned state, directly forming a thin film.

  Therefore, a catalyst material film can be formed without a mask in an atmosphere maintained at a vacuum level similar to that of an MOCVD apparatus or an MBE apparatus, and the growth substrate is exposed to the atmosphere after the formation of the catalyst material film. In addition, the columnar crystal structure can be grown by being carried into an MOCVD apparatus or an MBE apparatus. This makes it possible to grow a high-quality columnar crystal structure with high throughput and low cost while taking advantage of the use of a catalystist that the position and column diameter of the columnar crystal structure can be controlled.

  Furthermore, in the method and apparatus for producing a columnar crystal structure according to the present invention, as described above, in the production of a semiconductor having a columnar crystal structure, in the step of forming a catalyst material film, scanning of the beam Use both movement and rotation.

  Therefore, a growth substrate having a large area can be used, the efficiency of forming a catalyst material film can be increased, and a high throughput and therefore a lower cost process can be realized.

  Furthermore, the columnar crystal structure manufacturing method and apparatus of the present invention scan a plurality of beams as described above.

  Therefore, it is possible to shorten the time of the catalyst material film forming process and realize a high throughput and therefore a lower cost process.

  Furthermore, in the method for producing a columnar crystal structure according to the present invention, as described above, in the step of growing the columnar crystal structure, the growth substrate is parallel to gravity or perpendicular to gravity and the surface is directed in the direction of gravity. To support.

  Therefore, it is possible to prevent the foreign matter in the vacuum vessel from adsorbing to the surface of the growth substrate and realize crystal growth with fewer defects.

  In addition, as described above, the columnar crystal structure manufacturing apparatus of the present invention performs the formation of the catalyst material film and the growth of the columnar crystal structure in the same vacuum container or in separate vacuum containers. Connects the two by a vacuum passage.

  Therefore, the growth of the columnar crystal structure can be continuously performed without exposing the growth substrate on which the catalyst material film is formed to the atmosphere, and the formation of the catalyst material film and the columnar crystal structure can be performed in an extremely clean environment. Can be made to grow.

[Embodiment 1]
FIG. 1 is a cross-sectional view schematically showing the first half of a manufacturing process of a light emitting diode which is a semiconductor having a columnar crystal structure (nanocolumn) according to a first embodiment of the present invention. In this embodiment and other embodiments described later, GaN is taken as an example of a nanocolumn, but the invention is not limited to this, and all compound semiconductors including oxide, nitride, oxynitride, and the like are used. set to target. In addition, it is assumed that nanocolumn growth is performed by molecular beam epitaxy (MBE), but the nanocolumn growth method is not limited to this, and metal organic chemical vapor deposition (MOCVD) or hydride vapor deposition ( It is well known that nanocolumns can be produced even using an apparatus such as HVPE). Hereinafter, unless otherwise specified, an MBE apparatus is used.

  The manufacturing apparatus 1 shown in FIG. 1 is a FIB (focused ion beam) apparatus that forms a catalyst material film 12 that defines a location where a nanocolumn should grow when growing a nanocolumn from a growth substrate 11. The manufacturing apparatus 1 generally supplies a vacuum container 2 that accommodates the growth substrate 11, a sample holder 3 that mounts the growth substrate 11, and a gas containing a material that becomes a catalyst in the vacuum container 2. A gas supply source 4 communicates with the vacuum vessel 2, and any one of an ion beam, an electron beam, and a laser beam is converged on the column diameter of the nanocolumn, and the nanocolumn is grown on the growth substrate 11. And an irradiating beam source 5.

In the following embodiment, an ion beam is used as an example of the beam 6 from the beam source 5, that is, the focused ion beam deposition method is used. However, even when an electron beam or a laser beam is used, The same applies. Using these energy beams, the metal material that forms the catalyst material film 12 by cutting the chain connecting the metal (catalyst) material and the organic gas that easily volatilizes due to the addition of CH ₃ by applying energy. Can be attached to the substrate. As the catalyst material film 12, Pt, Ti or the like can be used. As the gas from the gas supply source 4, an organic gas containing the Pt, for example, metylcyclopentadienylplatinum: (CH ₃ ) ₃ (CH ₃ C ₅ H ₄ ) Pt and an organic gas containing Ti, such as titanium propoxide [Ti— (iC ₃ H ₇ O) ₄ ] or tetrakisdimethylamino titanium [Ti [N (CH ₃ ) ₂ ] ₄ ]. The gas supply source 4 may be an apparatus that uses a cylinder as it is when the gas material is a gas and evaporates it when it is a liquid.

In the manufacturing apparatus 1 configured as described above, a growth substrate 11 made of a Ga substrate is first placed in the sample holder 3, and the Pt is supplied from the gas supply source 4 in a state where the base vacuum degree is 10 ^−6. The contained organic gas is introduced into the vacuum vessel 2. As a result, the degree of vacuum decreases to about 10 ⁻⁴ . Next, in this gas atmosphere 7, when a voltage of 30 KeV is applied to the beam source 5 made of a Ga ion source, the ion beam 6 with a beam current of 10 pA is converged to irradiate the growth substrate 11 in a spot shape, ms order Thus, a circular Pt catalyst material film 12 can be formed with a thickness of several nm. By applying a scanning voltage to the scanning electrode 8 and causing the ion beam 6 to scan on the growth substrate 11 as indicated by reference numerals 6a and 6b, a pattern of the Pt catalyst material film 12 is formed on the growth substrate 11. be able to.

  Thereafter, as shown in FIG. 2, the growth substrate 11 is transferred together with the sample holder 3 to the movable vacuum vessel 21 having the load lock mechanism 22 by using the sample lot 23, and the MBE apparatus in the next process is maintained while maintaining the degree of vacuum. Move to.

FIG. 3 is a cross-sectional view schematically showing the latter half of the manufacturing process of the light emitting diode. The manufacturing apparatus 31 shown in FIG. 3 is the MBE apparatus for growing the nanocolumns 13 from the growth substrate 11. The growth substrate 11 is transferred from the movable vacuum vessel 21 to the vacuum vessel 32 of the manufacturing apparatus 31, and the base vacuum degree ^10-10 is increased to the order. In this state, the substrate temperature is 750 ° C., the plasma output is 450 W, the carrier gas is hydrogen gas (H ₂ ) from the gas supply source 33, and the Ga raw material is trimethylgallium (Ga (CH ₃ ) ₃ ) from the gas supply source 34. supplies ammonia (NH ₃₎ from the gas supply source 35 to the nitrogen source. Further, silane (SiH ₄ ) is supplied from a gas supply source 36 in order to add Si having n-type conductivity as an impurity. When Ga flux is supplied at a flow rate of 3.4 nm / min, an n-type semiconductor layer grows and grows for about 15 minutes, so that its height becomes 1 μm.

Subsequently, the substrate temperature is lowered to 650 ° C., the impurity gas is changed from the silane (SiH ₄ ) to trimethylindium (In (CH ₃ ) ₃ ) as an In raw material, and the flow rate of the In flux is set to 10 nm / min. The light emitting layer comprising an InGaN quantum well is grown. The growth time is 1 minute. The flow rate of Ga flux and the plasma output are the same as when the n-type semiconductor layer is grown. What is important here is that the rate of In flux is much higher than that of Ga flux, and the rate of Ga flux is lower than the rate of N flux. The light emitting layer may be formed in an InGaN / GaN multiple quantum well structure. A reflective film may be appropriately formed in the n-type semiconductor layer.

Further, the substrate temperature is raised to 750 ° C., and the impurity gas is cyclopentadienyl magnesium (Mg (C ₅ H ₅ ) ₂ ) containing Mg having p-type conductivity from trimethylindium (In (CH ₃ ) ₃ ). Then, the flow rate of Mg flux is set to 1 nm / min, the flow rate of Ga flux is set to 5 nm / min, and a p-type semiconductor layer is grown to complete the nanocolumn 13 as shown in FIG. The growth time is 4 minutes and the plasma power is the same at 450 W throughout the growth of the nanocolumns 13. During the growth of the p-type semiconductor layer, the diameter of the nanocolumn 13 is gradually increased by gradually changing the flow rate of ammonia (NH ₃ ), the flow rate of the carrier gas H ₂ , or the growth temperature, thereby forming electrodes. Therefore, a planar type p-type layer is formed.

  Thereafter, a transparent electrode is formed on the surface of the p-type layer and a p-type pad electrode is formed thereon by vapor deposition using an EB vapor deposition apparatus (not shown). Similarly, an n-type electrode composed of an n-type contact layer and an n-type pad electrode is formed on the back surface of the growth substrate 11 composed of a Ga substrate by vapor deposition using an EB vapor deposition apparatus, thereby completing a light emitting diode.

  As described above, in the present embodiment, when the nanocolumn 13 finally formed on the GaN LED or the like is grown using the catalyst material film 12, the catalyst material film 12 is not formed by vapor deposition and photolithography. The growth substrate 11 is accommodated in the vacuum vessel 2, and a gas containing a material serving as a catalyst is supplied from the gas supply source 4, and the ion beam 6 is supplied from the beam source 5 to the column diameter of the nanocolumn 13 in the atmosphere 7. By irradiating the growth substrate 11 with a convergence to a certain nm order, the catalyst material film 12 is directly formed into a thin film in a patterned state. Therefore, the catalyst material film 12 can be formed without a mask in an atmosphere kept at the same degree of vacuum as in the MOCVD apparatus, the MBE apparatus, etc., and after the formation of the catalyst material film 12, the growth substrate 11 is exposed to the atmosphere. In this case, the nanocolumn 13 can be grown by carrying it in an MOCVD apparatus or MBE apparatus in an extremely clean environment. This makes it possible to grow the high-quality nanocolumns 13 at a high cost and at a low cost while taking advantage of the use of a catalyst that the position and column diameter of the nanocolumns 13 can be controlled. For example, it takes about 1 hour for the growth (about 1 μm) of the nanocolumn 13 and about half a day for the electrode formation on the nanocolumn 13. In the conventional electrode formation by vapor deposition and photolithography, about half a day is required as with the electrode formation on the nanocolumn 13. What is necessary is that the irradiation of the beam 6 can reduce the element formation time to about half, for example, about 10 minutes with a 2-inch substrate.

  Preferably, the catalyst material film 12 is formed in a diffraction grating pattern shape with a two-dimensional photonic crystal having, for example, a triangle having a column diameter of 100 nm and a triangle of 230 nm as a basic unit. The light extraction efficiency can be increased.

[Embodiment 2]
FIG. 4 is a cross-sectional view schematically showing a manufacturing apparatus 41 according to the second embodiment of the present invention. The manufacturing apparatus 41 also forms the catalyst material film 12 that defines the location where the nanocolumn 13 should grow when growing the nanocolumn 13 from the growth substrate 11, and is similar to and corresponds to the manufacturing apparatus 1 described above. Parts are denoted by the same reference numerals, and description thereof is omitted. It should be noted that in this manufacturing apparatus 41, in synchronization with the scanning of the beam 6 in the xy direction by the scanning electrode 8, the support base 42 moves the growth substrate 11 to at least one of the xy directions, And at least one of rotation around the z-axis indicated by reference numeral 43.

  With this configuration, in manufacturing a semiconductor having the nanocolumns 13, the growth process of the nanocolumns 13, and in particular, the formation process of the catalyst material film 12 as described above is highly likely to become a production critical path. By using the movement and rotation of the growth substrate 11 in combination with the scanning of the beam 6, it is possible to use a growth substrate having a large area, increasing the efficiency of forming the catalyst material film 12, and being suitable for commercial production. Throughput and thus a lower cost process can be realized.

[Embodiment 3]
FIG. 5 is a cross-sectional view schematically showing a manufacturing apparatus 51 according to the third embodiment of the present invention. The manufacturing apparatus 51 also forms the catalyst material film 12 that defines the location where the nanocolumn 13 should grow when growing the nanocolumn 13 from the growth substrate 11, and is similar to and corresponds to the manufacturing apparatus 1 described above. Parts are denoted by the same reference numerals, and description thereof is omitted. It should be noted that in the manufacturing apparatus 51, the vacuum vessel 2 is provided with a plurality of ion beam sources (two reference numerals 5a and 5b in FIG. 5).

  Even with this configuration, it is possible to reduce the time for the catalyst material film 12 formation step and to realize a high throughput and therefore a lower cost process.

[Embodiment 4]
6 and 7 are cross-sectional views schematically showing manufacturing apparatuses 61 and 71 according to the fourth embodiment of the present invention. These manufacturing apparatuses 61 and 71 are the MBE apparatuses for growing the nanocolumns 13 from the growth substrate 11. The manufacturing apparatuses 61 and 71 are similar to the above-described manufacturing apparatus 31, and corresponding portions are denoted by the same reference numerals and described. Is omitted. It should be noted that in the manufacturing apparatus 61 shown in FIG. 6, the vacuum vessel 32 is tilted by 90 ° and the growth substrate 11 is supported in parallel with gravity. Next, in the manufacturing apparatus 71 shown in FIG. 32 is rotated 180 ° so that the growth substrate 11 is supported so that it is perpendicular to the gravity and the surface is directed in the direction of gravity. In these manufacturing apparatuses 61 and 71, the sample holder 3 and the vacuum vessel 32 are appropriately provided with a clamping mechanism or the like so that the growth substrate 11 and the sample holder 3 can be adapted to such inclination or rotation.

  With such a configuration, it is possible to prevent the foreign matter in the vacuum vessel 32 from being adsorbed to the surface of the growth substrate 11 and to realize crystal growth with fewer defects.

[Embodiment 5]
FIG. 8 is a cross-sectional view schematically showing a manufacturing apparatus 81 according to the fifth embodiment of the present invention. It should be noted that in this manufacturing apparatus 81, the vacuum container 2 of the manufacturing apparatus 1 for forming the catalyst material film 12 shown in FIG. 1 and the vacuum container 32 of the manufacturing apparatus 31 for growing the nanocolumn 13 are load-locked. 82, being connected to each other. Thus, when the FIB device and the MBE device are connected via the load lock 82 that is a vacuum passage, the catalyst material film 12 is formed when the nanocolumn 13 using the catalyst material film 12 is dedicated to manufacturing. The nanocolumns 13 can be continuously grown without exposing the growth substrate 11 to the atmosphere, and the catalyst material film 12 can be formed and the nanocolumns 13 can be grown in an extremely clean environment. Instead of using the separate vacuum containers 2 and 32, the formation of the catalyst material film 12 and the growth of the nanocolumns 13 may be continuously performed in the same vacuum container.

It is sectional drawing which shows typically the first half of the manufacturing process of the light emitting diode which is a semiconductor which has the columnar crystal structure (nanocolumn) based on the 1st Embodiment of this invention. It is sectional drawing which shows typically the movable vacuum container which connects the manufacturing apparatus of FIG. 1 and the manufacturing apparatus of FIG. It is sectional drawing which shows typically the second half of the manufacturing process of the light emitting diode which is a semiconductor which has the columnar crystal structure (nanocolumn) concerning the 1st Embodiment of this invention. It is sectional drawing which shows typically the manufacturing apparatus which concerns on the 2nd Embodiment of this invention. It is sectional drawing which shows typically the manufacturing apparatus which concerns on the 3rd Embodiment of this invention. It is sectional drawing which shows typically the manufacturing apparatus which concerns on the 4th Embodiment of this invention. It is sectional drawing which shows typically the manufacturing apparatus which concerns on the 4th Embodiment of this invention. It is sectional drawing which shows typically the manufacturing apparatus which concerns on the 5th Embodiment of this invention.

Explanation of symbols

1, 31, 41, 51, 61, 71, 81 Manufacturing apparatus 2, 32 Vacuum vessel 3 Sample holder 4 Gas supply source 5, 5a, 5b Ion beam source 6, 6a, 6b Beam 8 Scan electrode 11 Growth substrate 12 Catalyst material Membrane 13 Nanocolumn 21 Mobile vacuum vessel 22 Load lock mechanism 23 Sample lot 33, 34, 35, 36 Gas supply source 42 Support base 82 Load lock

Claims (8)

A patterned catalyst material film is formed on the growth substrate, and the material forming the columnar crystal structure is taken into the catalyst material film and grown between the growth substrate and the growth substrate. In the method for producing a columnar crystal structure that forms the columnar crystal structure,
The catalyst material film is irradiated with an ion beam, an electron beam, or a laser beam focused on the column diameter of the columnar crystal structure and irradiated on the growth substrate in an atmosphere containing a material to be a catalyst. A method for producing a columnar crystal structure, wherein patterning and thin film formation are performed.   2. The method for manufacturing a columnar crystal structure according to claim 1, wherein in addition to the scanning of the beam, at least one of movement and rotation of the growth substrate synchronized with the beam is used.   The columnar crystal structure manufacturing method according to claim 1, wherein a plurality of the beams are used.   4. The growth step of the columnar crystal structure supports the growth substrate so that the growth substrate is parallel to or perpendicular to gravity and the surface is directed in the direction of gravity. A method for producing a columnar crystal structure. In growing a columnar crystal structure from a growth substrate, in the columnar crystal structure manufacturing apparatus for forming a catalyst material film that defines a place where the columnar crystal structure should grow,
A vacuum vessel containing the growth substrate;
A gas supply source for supplying a gas containing a material serving as a catalyst in the vacuum vessel;
The ion beam, the electron beam, or the laser beam communicates with the vacuum vessel, converges to the column diameter of the columnar crystal structure, and irradiates a portion on the growth substrate where the columnar crystal structure is to be grown. An apparatus for manufacturing a columnar crystal structure, comprising: a beam source. The beam source can be scanned in the xy direction;
The growth substrate is mounted, and further includes a support base that causes the growth substrate to perform at least one of movement in at least one of the xy directions and rotation around the z axis in synchronization with scanning of the beam source. The columnar crystal structure manufacturing apparatus according to claim 5.   The columnar crystal structure manufacturing apparatus according to claim 5 or 6, comprising a plurality of the beam sources.   The formation of the catalyst material film and the growth of the columnar crystal structure are continuously performed in the vacuum container, or the vacuum container for forming the catalyst material film, and the vacuum container for growing the columnar crystal structure The columnar crystal structure manufacturing apparatus according to any one of claims 5 to 7, wherein the two are provided separately and are connected to each other by a vacuum passage.

Images