JP2010003955A - Processing device for solid surface - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a processing device having a compact stage structure that can irradiate respective surfaces of an object to be processed which has a three-dimensional structure with a gas cluster ion beam and can measure a beam current value and a beam current distribution at an irradiation position on a surface of the object to be processed even during the process. <P>SOLUTION: The processing device includes a parallel link 20 that controls the position/angle of the object to be processed relative to the gas cluster ion beam with three degrees of freedom in a translational direction and three degrees of freedom in a rotational direction, i.e. six degrees of freedom in total, and is provided with a beam detector on the reverse surface of a movable table of the parallel link 20 on the opposite side from a top surface side where the object to be processed is mounted, the movable table being enabled to be turned upside down. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention can be used, for example, for etching and planarizing the surface of semiconductors and other electronic device materials, and for etching and planarizing various device surfaces, pattern surfaces, and complex structure surfaces such as molds. The present invention relates to an apparatus for processing a solid surface by irradiation with a cluster ion beam.

  In recent years, solid surface processing methods using a gas cluster ion beam have attracted attention because they have little surface damage and a very small surface roughness. How to control the relative arrangement of the gas cluster ion beam and the object to be processed depending on the size, shape and type of the object to be processed is an important element for the gas cluster ion beam processing apparatus. It is also important how to place a beam detector such as a Faraday cup that can measure the beam current and beam current distribution with respect to the workpiece in order to accurately control the dose to the workpiece. Element.

  To date, several proposals have been made on mechanisms for controlling the relative position and angle between a workpiece and a gas cluster ion beam with respect to a solid surface processing apparatus using a gas cluster ion beam. For example, in Patent Document 1, since a beam is scanned over the entire surface of a workpiece such as a wafer, the mechanism can move the position of the workpiece in a plane perpendicular to the traveling direction of the gas cluster ion beam. The use of an XY position determination table (XY stage) is described. As for the arrangement of the beam detector, there is a method of using the workpiece holding surface itself, that is, a method of measuring the beam current value through the electrical lead by making the workpiece holding surface on the stage conductive. Proposed. Another method that uses a Faraday cup has been proposed.

Patent Document 2 discloses a gas cluster ion beam processing apparatus which combines a XYZ stage with a rotary stage whose tilt angle and rotation angle can be changed, and has a function of a six-axis stage, in order to control the posture of the workpiece with respect to the gas cluster ion beam. Is described. Although the positional relationship between the stage and the beam detector is not described, it is considered that the beam detector is installed on the stage or independently at a position not interlocked with the stage.
Japanese translation of PCT publication No. 2004-503064 JP 2007-330992 A

  In the relative position control mechanism between the object to be processed and the gas cluster ion beam described in Patent Document 1, the processing is performed in a plane perpendicular to the traveling direction of the gas cluster ion beam (Z direction) (in the XY plane). Although the relative position of the object and the beam can be changed, for example, the irradiation angle of the beam with respect to the object to be processed cannot be controlled. For this reason, a plane perpendicular to the traveling direction of the gas cluster ion beam, such as the wafer surface, can be processed, but for example, a pattern, structure, groove, step, etc. formed on the wafer is perpendicular to the wafer surface. There is a problem that the side wall surface cannot be substantially irradiated with the gas cluster ion beam and cannot be etched or flattened. Further, if the beam current value and the beam current distribution are detected on the workpiece holding surface, it is necessary to perform the beam detection with the workpiece removed, so that there is a problem that beam monitoring during the process cannot be performed. In order to avoid this problem, when a Faraday cup is prepared independently as a beam detector, the position of the Faraday cup is controlled in order to measure an accurate beam current value and beam current distribution at the irradiation position of the workpiece. Another stage was required, and there was a problem that the apparatus was enlarged. Alternatively, if the Faraday cup is mounted on the stage, the area capable of XY scanning must be increased by the amount of the beam detector, and there is a problem that the stage is enlarged.

In Patent Document 2, a tilting / rotating stage is overlapped on an XYZ stage so that three or more axes (in this case, X, Y, Z and θ _X , θ _Y , θ _Z which are rotation axes around the respective axes) are disclosed. (Total 6 axes) stage mechanism. For this reason, for example, the irradiation angle of the cluster ion beam can be controlled with respect to the sample. In particular, in the case of a 6-axis stage, the irradiation position and irradiation angle of each surface of a three-dimensional sample can be controlled, and processing with a high degree of freedom is possible. The relationship between the stage and the beam detector is not described, but if the beam detector is installed on the stage, the beam current value and beam current distribution at the irradiation position of the workpiece can be accurately measured. . However, since this stage has a structure in which the stages of each axis are serially stacked, the size of the stage increases as the number of axes increases, and the beam detector can only be installed on the work table. There was a problem that the stage further increased in size by the beam detector.

  In view of the above problems, an object of the present invention is to irradiate each surface of a workpiece having a three-dimensional structure with a gas cluster ion beam, and to determine the beam current value and beam current distribution at the irradiation position of each workpiece surface. An object of the present invention is to provide a solid surface processing apparatus having a compact stage structure that can be measured even during the process.

  According to the first aspect of the present invention, an apparatus for processing a solid surface using a gas cluster ion beam includes a stage having a parallel link structure, and a beam detector in a space surrounded by the parallel link.

  In the invention of claim 2, in the invention of claim 1, the parallel link can control the position / angle of the workpiece with respect to the gas cluster ion beam with a total of 6 degrees of freedom, 3 degrees of freedom in the translational direction and 3 degrees of freedom in the rotational direction. The beam detector is installed on the lower surface of the movable table of the parallel link opposite to the upper surface side on which the workpiece is mounted, so that the movable table can be turned upside down.

  In the invention of claim 3, in the invention of claim 1, the parallel link can control the position and angle of the workpiece relative to the gas cluster ion beam with a total of 6 degrees of freedom, 3 degrees of freedom in the translational direction and 3 degrees of freedom in the rotational direction. A beam detector is installed on the lower surface of the movable table of the parallel link opposite to the upper surface side on which the workpiece is mounted, and a through hole through which the gas cluster ion beam incident on the beam detector passes is formed on the movable table. It is assumed that it is provided.

  According to a fourth aspect of the present invention, in any one of the first to third aspects, the parallel link is installed on a two-axis or three-axis linear stage.

  According to a fifth aspect of the present invention, in any of the first to fourth aspects of the present invention, the plurality of parallel links are sequentially driven based on the irradiation position, irradiation angle, and irradiation amount of the gas cluster ion beam to the workpiece on which a plurality of parallel links are set in advance. To be controlled.

[Action]
The parallel link stage is a stage capable of multi-axis control of 3 or more axes. Since there is a space in the part surrounded by the link (the back side of the movable surface), the sample is placed on the front side of the movable surface and the space on the back side. A beam detector can be installed. FIG. 10 shows an example of a three-axis parallel link 1 and a stage in which a sample 2 is placed on the front of the sample holding surface and a beam detector 3 is placed on the back. In the three-axis parallel link, linear motion in the Z-axis direction and inclination angles θ _X and θ _Y around the X and Y axes can be controlled. By providing a mechanism for injecting the beam into the beam detector, for example, a mechanism for reversing the sample support 180 degrees (see FIG. 2 described later), the support can be reversed when necessary to monitor the state of the beam. it can. Since the beam detector is attached to the parallel link stage, the position and orientation of the beam detector can be controlled in the same manner as the sample, and the beam state at the position equivalent to the irradiation position of the sample can be monitored. .

  Here, as a beam detector for monitoring the state of the beam, an ion current detector of a cluster ion beam, a cluster size detector, a beam energy detector, and an electron from a neutralizer for neutralizing the cluster ion beam A current detector or the like can be installed. It is possible to monitor the state of the beam before and after the sample processing process or at an appropriate stage during the processing process. The method of installing the sample and the beam detector in the front and back positional relationship does not require a new installation space for the beam detector, and makes good use of the structural features of the parallel link stage. This is the first proposal.

  According to this invention, the compact stage which enables position control of a beam detector is realizable by installing a beam detector in the space enclosed by the parallel link.

  Further, according to the present invention, a plurality of planes of a workpiece having a three-dimensional structure can be sequentially processed by one process (a series of processes), and at that time, gas clusters can be formed at a desired irradiation position, irradiation angle, and irradiation amount. An ion beam can be irradiated.

Embodiments of the present invention will be described below.
FIG. 1 shows the basic configuration of a solid surface processing apparatus using a gas cluster ion beam according to the present invention. First, the basic configuration of the processing apparatus will be described with reference to FIG.

  The source gas is ejected from the nozzle 11 into the vacuum cluster generation chamber 12 to aggregate the gas molecules and generate clusters. The cluster is guided to the ionization chamber 14 through the skimmer 13 as a gas cluster beam. In the ionization chamber 14, the neutral cluster is ionized by irradiating an electron beam, for example, thermal electrons, from the ionizer 15. The ionized gas cluster beam is accelerated by the acceleration electrode 16, and the gas cluster ion beam is incident on the process chamber 17. A workpiece 30 is attached to the parallel link 20 provided in the process chamber 17, and an incident gas cluster ion beam 40 is irradiated to the surface of the workpiece 30 with a predetermined beam diameter by the aperture 18. Is done. When the surface of the electrical insulator 30 is flattened, the gas cluster ions may be neutralized by electrons in advance.

2A shows an outline of the configuration of the parallel link 20 in FIG. 1, in which 21 indicates a fixed base and 22 indicates a link mechanism. Reference numeral 23 denotes a movable table. The movable table 23 is connected and supported by six link mechanisms 22 that can be expanded and contracted (equipped with a linear motion mechanism), and has three degrees of freedom in the translation direction (X, Y, Z), and the rotation direction. It is driven with a total of 6 degrees of freedom, 3 degrees of freedom (θ _X , θ _Y , θ _Z ).

  In this example, the movable table 23 includes a ring-shaped frame body 23a and a disk-shaped mounting table 23b positioned in the frame body 23a, and a pair of shafts 23c project from the mounting table 23b. . The mounting table 23b can be rotated (inverted vertically) by the pair of shafts 23c being pivotally supported by the frame body 23a. The six link mechanisms 22 are connected to the frame body 23a. Note that a mechanism (for example, a motor or the like) that rotates the shaft 23c and reverses the mounting table 23b is omitted.

  As shown in FIG. 2B, the workpiece 30 is placed on the upper surface of the mounting table 23 b of the movable table 23. On the other hand, an ion current detector 50 is attached to the lower surface side of the mounting table 23b in this example. The ion current detector 50 is, for example, a Faraday cup.

  When the transport distance of the gas cluster ion beam is increased, the cluster is decomposed by collision with residual gas molecules, and the planarization effect and the etching effect are reduced. Therefore, it is desirable to make the distance from the gas cluster ion beam source to the workpiece 30 as short as possible. In this example, the aperture 18 was used to adjust the beam size to a diameter of 20 mm at the point A where the center of the 150 mm beam traveled from the exit of the ionization chamber 14. The parallel link 20 was arranged with the origin position of the parallel link 20 aligned with the point A so that the irradiation position and angle of the gas cluster ion beam with respect to the workpiece 30 could be controlled in the vicinity of the distance of 150 mm.

  FIG. 3 shows the shape of the workpiece 30 and the coordinate definition of the workpiece 30 used in Example 1 shown below. The center of the upper surface of the disk-shaped mounting table 23b is set as the origin, and each position of the workpiece 30 to be irradiated is expressed by (X, Y, Z) coordinates from the origin. In FIG. 3B, the processing object 30 is installed so that the center point of the bottom surface of the processing object 30 coincides with the origin.

  The control of the relative position and angle between the gas cluster ion beam and the workpiece 30, that is, the drive control of the parallel link 20 is performed by the drive controller (not shown) of the parallel link 20 and the shape data of the workpiece 30 and the mounting table 23 b. The required drive can be realized by inputting the arrangement data of the processing object 30 to and further inputting the following information. This information is an irradiation surface (irradiation target surface), an irradiation center position, and an irradiation direction with respect to the irradiation surface, and the irradiation surface is expressed by three coordinates of the workpiece 30 or a normal vector of the irradiation surface. The center position is represented by one coordinate. Further, the irradiation direction is represented by one three-dimensional vector coordinate.

  Ar was used as a source gas, an Ar cluster ion beam was generated, the Ar cluster ions were accelerated to 20 kV, and the workpiece 30 was irradiated. The workpiece 30 was shaped as shown in FIG. 3A, and was placed on the mounting table 23b of the movable table 23 of the parallel link 20 as shown in FIG. 3B. The constituent material of the workpiece 30 is an SKD material (die steel) in this example.

The processing object 30 has a shape in which two rectangular parallelepipeds are stacked, and among these surfaces, six surfaces are defined as surfaces a to f as shown in FIG. 3A and below.
Surface a: Left side of upper rectangular parallelepiped Surface b: Left side of lower rectangular parallelepiped Surface c: Right side of upper rectangular parallelepiped Surface d: Rear side of upper rectangular parallelepiped Surface e: Upper surface of upper rectangular parallelepiped Surface f: Lower rectangular parallelepiped Prior to processing on each surface, first, the current value of the cluster ion beam at point A was measured. The ion current detector 50 attached to the lower surface of the mounting table 23b of the movable table 23 of the parallel link 20 was inverted 180 °, and the position was adjusted on the stage so that the center position of the detection surface was at the point A. When a cluster ion beam was generated and the beam current value was measured, it was 50 μA. After the measurement, generation of the cluster ion beam was temporarily stopped.

  Subsequently, the movable table 23 of the parallel link 20 is moved as shown in FIG. 5A in order to flatten a part of the surface a of the workpiece 30 by irradiation with a gas cluster ion beam at an irradiation angle of 82 degrees. I let you. In order to drive and control the parallel link 20 in this way, information input to the drive control unit of the parallel link 20, that is, the normal vector of the irradiation surface, the irradiation center position (coordinates), and the irradiation direction (three-dimensional vector coordinates) are illustrated. It is shown in (a) of Table 1 shown in FIG.

By inputting the information in Table 1 (a), the drive control unit of the parallel link 20 calculates a required movement amount, and moves the movable table 23 as shown in FIG. 5 (a) according to the calculated value. In this state, a gas cluster ion beam was generated again. Irradiation was performed only for a time when the effective irradiation dose was 7 × 10 ¹⁶ ions / cm ^2, and then generation of the cluster ion beam was stopped.

  Next, prior to processing on each surface again, first, the current position of the cluster ion beam at the point A was measured. The ion current detector 50 attached to the lower surface of the mounting table 23 b of the movable table 23 of the parallel link 20 was inverted 180 °, and the position was adjusted on the stage so that the center position of the detection surface was at the point A. When a cluster ion beam was generated and the beam current value was measured, it was 49 μA. After the measurement, generation of the cluster ion beam was temporarily stopped.

Subsequently, in order to flatten a part of the surface b, the information of Table 1 (b) is input, the movable table 23 of the parallel link 20 is moved as shown in FIG. 5 (b), and the effective irradiation dose is set. Similarly, the gas cluster ion beam was irradiated at 7 × 10 ¹⁶ ions / cm ² . Similarly, after measuring the beam current value at the point A, the movable table 23 of the parallel link 20 is shown in FIGS. 5C to 5F by giving the information in Tables 1C to 1F. Then, the gas cluster ion beam was sequentially irradiated onto a part of the surfaces cf by the same dose amount.

  The surface roughness of the workpiece 30 before and after irradiation was measured using an atomic force microscope (AFM). The surface roughness Ra before the beam irradiation was about 0.20 μm, but the surface roughness Ra after the irradiation was about 0.14 μm.

  Thus, in this example, by setting the workpiece 30 on the parallel link 20 with six degrees of freedom, a plurality of surfaces a to f that are not on one plane of the workpiece 30 are sequentially processed in one process. In this case, a desired irradiation angle (82 degrees in this example) can be selected and flattened. The irradiation angle is an angle formed by the normal of the processed surface and the gas cluster ion beam. In this example, the angle is 82 degrees. However, when the angle is 60 degrees or more, an extremely excellent surface flattening effect can be obtained.

  In this example, since the ion current detector 50 is attached to the lower surface of the mounting table 23b of the movable table 23 of the parallel link 20, the ion current detector 50 monitors the beam current value at the irradiation position during the process. Thus, it is possible to irradiate only a necessary dose.

  That is, before irradiating the processing surface with the gas cluster ion beam, the mounting table 23b is turned upside down and the beam current value is monitored by the ion current detector 50, whereby the irradiation time corresponding to the irradiation dose amount from the beam current value. By inverting the mounting table 23b and irradiating it for the determined irradiation time, it is possible to irradiate the processing surface with a necessary irradiation amount. Thereby, a plurality of processing surfaces of processing object 30, and a plurality of processing objects 30 can be processed uniformly. The monitoring of the beam current value may be performed only once before starting the process if the process time is short and the processing surface can always be positioned at the place where the beam current value is monitored.

  In addition, although the example of the planarization process was shown in this example, it can carry out in the same procedure also about the use which etches each surface by desired amount.

The parallel link 20 was mounted on the stage 60 as shown in FIG. Although the stage 60 is shown in a simplified manner in FIG. 6, it is a linear stage with X, Y, and Z axes. In this example, it is assumed that three degrees of freedom (X, Y, Z) in the translation direction is assumed by the stage 60, and three degrees of freedom (θ _X , θ _Y , θ _Z ) in the rotation direction are assumed by the parallel link 20.

  The workpiece 30 ′ shown in FIG. 7 was placed on the mounting table 23 b of the parallel link 20. This workpiece 30 'has a shape in which four workpieces 30 in the first embodiment are connected.

  The surface a to f (see FIG. 3A) on each part (1) to (4) of the workpiece 30 ′ is driven and controlled by the stage 60 and the parallel link 20, and the gas cluster ion beam is applied as in the first embodiment. Were sequentially irradiated and flattened.

  The surface roughness of the workpiece 30 ′ before and after irradiation was measured using an atomic force microscope (AFM). The surface roughness Ra before the beam irradiation was about 0.23 μm for each of the surfaces a to f of the portions (1) to (4), but the surface roughness Ra after the irradiation was about 0. It was 15 μm.

  As described above, depending on the shape and size of the workpiece 30 ′, a combination of the parallel link 20 and the stage 60 can be used to satisfactorily machine a plurality of machining surfaces in one process. The stage 60 is not limited to an X, Y, and Z axis linear stage, and may be an X, Y axis linear stage, for example, depending on the application.

  Also in the second embodiment, if the ion current detector 50 appropriately monitors the beam current value during the process, and the irradiation time corresponding to the irradiation dose amount is obtained from the beam current value and irradiated, only the necessary irradiation amount is obtained. Irradiation can be performed, and each processed surface of the processing target 30 ′ can be processed uniformly.

  In addition, although the example of the planarization process was shown in this example, it can carry out in the same procedure also about the use which etches each surface by desired amount.

  In the embodiment described above, the movable table 23 of the parallel link 20 is composed of the frame body 23a and the mounting table 23b that can be turned upside down. The beam current value can be monitored by appropriately inverting it, but instead, for example, a configuration as shown in FIG. 8 can be adopted.

  In FIG. 8, an ion current detector 50 is attached to the lower surface of the movable table 23 ′ of the parallel link 20 ′, and a through hole 23d through which a gas cluster ion beam incident on the ion current detector 50 passes is provided in the movable table 23 ′. By adopting such a configuration, the beam current value can be monitored without inverting the movable table 23 '. The through-hole 23d only needs to have a slight size, for example, a diameter of about 1 mm or more is sufficient. The beam current value and the beam current distribution can be known by a method of scanning the through hole 23d by moving the parallel link 20 'or the linear stage. FIG. 8B shows a state in which two workpieces 30 are installed on the movable table 23 ′, avoiding the position of the through hole 23 d.

  In the above-described embodiment, the workpiece 30 (30 ′) is directly installed on the movable table 23 (23 ′) of the parallel link 20 (20 ′). For example, the workpiece 30 is separated from the parallel link. A support base to be installed / supported may be prepared, and the object to be processed may be installed on the parallel link via the support base.

  FIG. 9 is a flowchart showing a procedure in the case of automatically performing the process of sequentially flattening a plurality of surfaces of the workpiece 30 in the first embodiment described above, and the entire processing apparatus shown in FIG. By providing a control means for controlling and using a control software program of the control means, a plurality of surfaces can be processed automatically. The procedure will be described below.

  First, the shape data of the workpiece and the arrangement data of the workpiece relative to the parallel link are input to the program (steps S1 and S2). Next, a data set of the irradiation surface, irradiation center position, irradiation direction, and irradiation dose amount for the gas cluster ion beam is designated by the number of irradiation conditions (irradiation surfaces) that need to be flattened (N) (step S3). ). The drive amount of the parallel link necessary for irradiating the object to be processed with the gas cluster ion beam is calculated according to each specified condition (step S4).

n = 1 is set (step S5), and the beam current value In (n = 1) is measured by the current detector on the lower surface of the parallel link movable table (step S6). Next, the irradiation time tn (n = 1) under the irradiation condition of the n = 1st data set is calculated from the measured beam current value In (n = 1) (step S7). The parallel link is driven corresponding to the n = 1st data set, and the posture is held for the time of tn (n = 1) (step S8). Immediately after the gas cluster ion beam is turned on, the beam is irradiated for a time corresponding to the designated dose, ie, t ₁ (step S9). Then, set to n = n + 1 (step S11), the parallel link corresponding to n = 2 th data set is driven, the time to measure the beam current value, corresponding to a dose of specified, only t ₂ beams Irradiation is performed.

  Similarly, the parallel links are sequentially driven corresponding to the third, fourth,... Data sets, and beam irradiation is sequentially performed for a time corresponding to the designated dose amount. When the irradiation under the condition of the last input data set (n = N) is completed (step S10), the gas cluster ion beam is turned off and the beam irradiation is ended.

  The ON / OFF of the beam in the above is performed, for example, by controlling ON / OFF of a shutter installed between the beam and the workpiece or controlling the acceleration voltage of the gas cluster ion beam to 20 kV (ON) and 0 kV (OFF). it can.

Further, the measurement of the beam current value is performed only when n = 1, and the beam current value In when n> ₁ is the same as I _1, and a flow for shortening the process time can be performed.

The figure for demonstrating the structure of one Example of the processing apparatus of the solid surface using the gas cluster ion beam by this invention. 1A is a perspective view illustrating a configuration outline of a parallel link in FIG. 1, and FIG. 2B is a front view illustrating a state in which a workpiece and an ion current detector are installed on a mounting table for the parallel link illustrated in FIG. A is a perspective view showing the shape of the workpiece used in Example 1, and B is a perspective view showing the coordinates (coordinate definition) of the workpiece shown in A. FIG. The table | surface which shows the control information given to a parallel link in order to irradiate each surface af of the workpiece shown to FIG. 3A to a gas cluster ion beam. The figure which shows the drive state (movement state of a movable table) at the time of irradiating each surface af of the workpiece shown to FIG. 3A with a gas cluster ion beam. The figure for demonstrating the structure of the other Example of the processing apparatus of the solid surface using the gas cluster ion beam by this invention. The perspective view which shows the shape of the workpiece used in Example 2. FIG. A is a perspective view showing another configuration example of the parallel link, and B is a front view showing a state in which the workpiece and the ion current detector are installed on the movable table of the parallel link shown in A. FIG. The flowchart which shows the procedure in the case of processing automatically the several surface of a process target object sequentially. The perspective view which shows the state in which the sample and the beam detector were installed in the 3-axis parallel link.

Claims (5)

An apparatus for processing a solid surface using a gas cluster ion beam,
It has a stage with a parallel link structure,
A solid surface processing apparatus comprising a beam detector in a space surrounded by the parallel links. In the processing apparatus of the solid surface of Claim 1,
The parallel link can control the position / angle of the workpiece with respect to the gas cluster ion beam with a total of 6 degrees of freedom, 3 degrees of freedom in the translation direction and 3 degrees of freedom in the rotation direction,
The beam detector is installed on the lower surface of the movable table of the parallel link opposite to the upper surface side on which the workpiece is mounted,
An apparatus for processing a solid surface, wherein the movable table can be turned upside down. In the processing apparatus of the solid surface of Claim 1,
The parallel link can control the position / angle of the workpiece with respect to the gas cluster ion beam with a total of 6 degrees of freedom, 3 degrees of freedom in the translation direction and 3 degrees of freedom in the rotation direction,
The beam detector is installed on the lower surface of the movable table of the parallel link opposite to the upper surface side on which the workpiece is mounted,
An apparatus for processing a solid surface, wherein a through-hole through which a gas cluster ion beam incident on the beam detector passes is provided in the movable table. In the processing apparatus of the solid surface in any one of Claims 1 thru | or 3,
A solid surface processing apparatus, wherein the parallel link is installed on a two-axis or three-axis linear stage. In the processing apparatus of the solid surface in any one of Claims 1 thru | or 4,
An apparatus for processing a solid surface, which is sequentially driven and controlled on the basis of an irradiation position, an irradiation angle, and an irradiation amount of the gas cluster ion beam to the object to be processed in which a plurality of the parallel links are set in advance.

Images