JP2009544489A5 - - Google Patents

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Publication number
JP2009544489A5
JP2009544489A5 JP2009520792A JP2009520792A JP2009544489A5 JP 2009544489 A5 JP2009544489 A5 JP 2009544489A5 JP 2009520792 A JP2009520792 A JP 2009520792A JP 2009520792 A JP2009520792 A JP 2009520792A JP 2009544489 A5 JP2009544489 A5 JP 2009544489A5
Authority
JP
Japan
Prior art keywords
crystal
nozzle
polycrystalline silicon
silicon substrate
plate structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009520792A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009544489A (ja
Filing date
Publication date
Priority claimed from US11/459,059 external-priority patent/US20080018713A1/en
Application filed filed Critical
Publication of JP2009544489A publication Critical patent/JP2009544489A/ja
Publication of JP2009544489A5 publication Critical patent/JP2009544489A5/ja
Pending legal-status Critical Current

Links

JP2009520792A 2006-07-21 2007-07-16 多結晶シリコン装置およびその製造方法 Pending JP2009544489A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/459,059 US20080018713A1 (en) 2006-07-21 2006-07-21 Multi-crystalline silicon device and manufacturing method
PCT/US2007/016126 WO2008013691A2 (en) 2006-07-21 2007-07-16 Multi-crystalline silicon device and manufacturing method

Publications (2)

Publication Number Publication Date
JP2009544489A JP2009544489A (ja) 2009-12-17
JP2009544489A5 true JP2009544489A5 (enExample) 2011-09-15

Family

ID=38754521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009520792A Pending JP2009544489A (ja) 2006-07-21 2007-07-16 多結晶シリコン装置およびその製造方法

Country Status (4)

Country Link
US (1) US20080018713A1 (enExample)
EP (1) EP2043866A2 (enExample)
JP (1) JP2009544489A (enExample)
WO (1) WO2008013691A2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8206998B2 (en) * 2009-06-17 2012-06-26 Canon Kabushiki Kaisha Method for manufacturing liquid discharge head
CN113727860B (zh) * 2019-04-29 2023-04-28 惠普发展公司，有限责任合伙企业 电耦接到流体管芯的导电元件
JP7321785B2 (ja) * 2019-06-17 2023-08-07 キヤノン株式会社 基板および液体吐出ヘッドとそれらの製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5075250A (en) * 1991-01-02 1991-12-24 Xerox Corporation Method of fabricating a monolithic integrated circuit chip for a thermal ink jet printhead
US5160945A (en) * 1991-05-10 1992-11-03 Xerox Corporation Pagewidth thermal ink jet printhead
JP3365224B2 (ja) * 1996-10-24 2003-01-08 セイコーエプソン株式会社 インクジェット式記録ヘッドの製造方法
US5807763A (en) * 1997-05-05 1998-09-15 International Business Machines Corporation Electric field test of integrated circuit component
US5880988A (en) * 1997-07-11 1999-03-09 International Business Machines Corporation Reference potential for sensing data in electronic storage element
US6713329B1 (en) * 1999-05-10 2004-03-30 The Trustees Of Princeton University Inverter made of complementary p and n channel transistors using a single directly-deposited microcrystalline silicon film
KR100374788B1 (ko) * 2000-04-26 2003-03-04 삼성전자주식회사 버블 젯 방식의 잉크 젯 프린트 헤드, 그 제조방법 및잉크 토출방법
US6663221B2 (en) * 2000-12-06 2003-12-16 Eastman Kodak Company Page wide ink jet printing
US6475402B2 (en) * 2001-03-02 2002-11-05 Hewlett-Packard Company Ink feed channels and heater supports for thermal ink-jet printhead
US6616268B2 (en) * 2001-04-12 2003-09-09 Lexmark International, Inc. Power distribution architecture for inkjet heater chip
US6739519B2 (en) * 2002-07-31 2004-05-25 Hewlett-Packard Development Company, Lp. Plurality of barrier layers
US6648454B1 (en) * 2002-10-30 2003-11-18 Hewlett-Packard Development Company, L.P. Slotted substrate and method of making
US6821450B2 (en) * 2003-01-21 2004-11-23 Hewlett-Packard Development Company, L.P. Substrate and method of forming substrate for fluid ejection device

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