JP2009522810A5 - - Google Patents
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- JP2009522810A5 JP2009522810A5 JP2008549523A JP2008549523A JP2009522810A5 JP 2009522810 A5 JP2009522810 A5 JP 2009522810A5 JP 2008549523 A JP2008549523 A JP 2008549523A JP 2008549523 A JP2008549523 A JP 2008549523A JP 2009522810 A5 JP2009522810 A5 JP 2009522810A5
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- JP
- Japan
- Prior art keywords
- substrate
- processing
- zone
- determining
- electrode
- Prior art date
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- 239000000758 substrate Substances 0.000 claims 28
- 238000000034 method Methods 0.000 claims 16
- 239000003792 electrolyte Substances 0.000 claims 5
- 229920001940 conductive polymer Polymers 0.000 claims 3
- 239000003082 abrasive agent Substances 0.000 claims 2
- 229920000642 polymer Polymers 0.000 claims 2
- 210000002816 Gills Anatomy 0.000 claims 1
- 230000003796 beauty Effects 0.000 claims 1
- 230000001066 destructive Effects 0.000 claims 1
- 238000005305 interferometry Methods 0.000 claims 1
- 238000000691 measurement method Methods 0.000 claims 1
Claims (15)
基板に対する処理ターゲットを決定するステップと、
上記基板の表面を電気化学的に処理するステップと、
処理の間に予測処理指標と実際処理指標との間の偏差を決定するステップと、
上記偏差に応答して処理中に少なくとも1つの処理変数を変えるステップと、
を備えた方法。 In a method for processing a substrate,
Determining a processing target for the substrate;
Electrochemically treating the surface of the substrate;
Determining a deviation between a predicted process indicator and an actual process indicator during processing;
Changing at least one process variable during processing in response to the deviation;
With a method.
研磨材料に対して上記基板の表面を押し付ける段階と、
前記研磨材料と上記基板の表面との間に相対的運動を確立する段階と、
を更に含む、請求項1に記載の方法。 The step of electrochemically treating the surface comprises:
Pressing the surface of the substrate against an abrasive material;
Establishing a relative motion between the abrasive material and the surface of the substrate;
The method of claim 1, further comprising:
上記基板の表面から離間された電極に対して上記基板の表面をバイアスする段階と、
上記電極及び上記基板の表面と接触させるように電解質を与える段階と、
を更に含む、請求項1に記載の方法。 The step of electrochemically treating the surface of the substrate comprises:
Biasing the surface of the substrate against an electrode spaced from the surface of the substrate;
Providing an electrolyte in contact with the electrode and the surface of the substrate;
The method of claim 1, further comprising:
電解質の存在中で導電性ポリマー表面に対して上記基板の表面を押し付ける段階と、
上記導電性ポリマー表面を介して上記基板の表面に電気的バイアスを印加する段階と、
上記基板の表面と上記導電性ポリマー表面との間に相対的運動を与える段階と、
を更に含む、請求項1に記載の方法。 The step of electrochemically treating the surface of the substrate comprises:
Pressing the surface of the substrate against the surface of the conductive polymer in the presence of an electrolyte;
Applying an electrical bias to the surface of the substrate through the conductive polymer surface;
Providing relative motion between the surface of the substrate and the surface of the conductive polymer;
The method of claim 1, further comprising:
プラテンによって支持された絶縁性ポリマー表面に対して上記基板の表面を押し付ける段階と、
上記基板の表面と上記プラテンにより支持された電極との間に電解質を介して導電路を確立する段階と、
上記プラテンから延びる電気的コンタクトを介して上記基板の表面に電気的バイアスを印加する段階と、
上記基板の表面と上記絶縁性ポリマー表面との間に相対的運動を与える段階と、
を更に含む、請求項1に記載の方法。 The step of electrochemically treating the surface of the substrate comprises:
Pressing the surface of the substrate against an insulating polymer surface supported by a platen;
Establishing a conductive path via an electrolyte between the surface of the substrate and the electrode supported by the platen;
Applying an electrical bias to the surface of the substrate through the electrical contacts Ru extending beauty from said platen,
Providing relative motion between the surface of the substrate and the surface of the insulating polymer;
The method of claim 1, further comprising:
予測電流を測定電流と比較する段階、上記基板から除去される予測電荷を測定電荷と比較する段階、上記電気化学的処理中に予測厚さを実際厚さと比較する段階のうち少なくとも一つの段階
を更に含む、請求項1に記載の方法。 The determining step is
At least one of a step of comparing a predicted current with a measured current, comparing a predicted charge removed from the substrate with a measured charge, and comparing a predicted thickness with an actual thickness during the electrochemical process < The method of claim 1, further comprising:
Ieiは、ゾーンiについての電流のエラーであり、
Ceiは、ゾーンiについての電荷のエラーであり、
P、I及びDは、定数である、
請求項16に記載の方法。 Vi is expressed by the following equation:
Ie i is the current error for zone i,
Ce i is the charge error for zone i,
P, I and D are constants,
The method of claim 16.
ターゲットプロファイル及び上記ターゲットプロファイルを達成するための予測処理指標を決定するステップと、
複数のゾーンを有する電極を備える処理パッドアセンブリに対して基板の導電性表面を接触させるステップと、
上記基板の上記導電性表面と上記電極の少なくとも1つのゾーンとの間に電解質を介して導電路を確立するステップと、
上記基板の上記導電性表面と上記電極の各ゾーンとの間に印加される電気的バイアスを独立して制御するステップと、
処理の間に予測処理指標と実際処理指標との間の偏差を決定するステップと、
上記偏差に応答して処理中に少なくとも1つの処理変数を変えるステップと、
を備えた方法。 In a method for processing a substrate,
Determining a target profile and a predictive processing indicator for achieving the target profile;
Contacting the conductive surface of the substrate against a processing pad assembly comprising an electrode having a plurality of zones;
Establishing a conductive path via an electrolyte between the conductive surface of the substrate and at least one zone of the electrode;
A step of independently controlling the electrical bias applied to between each zone of the conductive surface and the electrode of the substrate,
Determining a deviation between a predicted process indicator and an actual process indicator during processing;
Changing at least one process variable during processing in response to the deviation;
With a method.
ターゲットプロファイル及び上記ターゲットプロファイルを達成するための予測処理指標を決定するステップと、
複数のゾーンを有する電極を備える処理パッドアセンブリに対して基板の導電性表面を接触させるステップと、
上記基板の上記導電性表面と上記電極の少なくとも1つのゾーンとの間に電解質を介して導電路を確立するステップと、
上記基板の上記導電性表面と上記電極の各ゾーンとの間に印加される電気的バイアスを独立して制御するステップと、
少なくとも1つのゾーンにおいて上記ターゲットプロファイルを達成するのに必要とされる予測処理時間の変化を決定するステップと、
上記決定された変化を補償するように上記電気化学的処理を調整するステップと、
を備えた方法。 In a method for processing a substrate,
Determining a target profile and a predictive processing indicator for achieving the target profile;
Contacting the conductive surface of the substrate against a processing pad assembly comprising an electrode having a plurality of zones;
Establishing a conductive path via an electrolyte between the conductive surface of the substrate and at least one zone of the electrode;
A step of independently controlling the electrical bias applied to between each zone of the conductive surface and the electrode of the substrate,
Determining a change in predicted processing time required to achieve the target profile in at least one zone;
Adjusting the electrochemical treatment to compensate for the determined change;
With a method.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/326,646 US20070158201A1 (en) | 2006-01-06 | 2006-01-06 | Electrochemical processing with dynamic process control |
PCT/US2006/062476 WO2007120357A2 (en) | 2006-01-06 | 2006-12-21 | Electrochemical processing with dynamic process control |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009522810A JP2009522810A (en) | 2009-06-11 |
JP2009522810A5 true JP2009522810A5 (en) | 2009-10-15 |
Family
ID=38231698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008549523A Pending JP2009522810A (en) | 2006-01-06 | 2006-12-21 | Electrochemical processing by dynamic processing control |
Country Status (4)
Country | Link |
---|---|
US (1) | US20070158201A1 (en) |
JP (1) | JP2009522810A (en) |
TW (1) | TW200733216A (en) |
WO (1) | WO2007120357A2 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8192605B2 (en) * | 2009-02-09 | 2012-06-05 | Applied Materials, Inc. | Metrology methods and apparatus for nanomaterial characterization of energy storage electrode structures |
WO2014149330A1 (en) | 2013-03-15 | 2014-09-25 | Applied Materials, Inc. | Dynamic residue clearing control with in-situ profile control (ispc) |
US9286930B2 (en) * | 2013-09-04 | 2016-03-15 | Seagate Technology Llc | In-situ lapping plate mapping device |
JP2021152202A (en) * | 2020-03-23 | 2021-09-30 | キオクシア株式会社 | Anodizing device |
CN113622015B (en) * | 2021-10-12 | 2021-12-24 | 深圳市景星天成科技有限公司 | Online electrolytic polishing monitoring system |
CN115142112A (en) * | 2022-09-01 | 2022-10-04 | 徐州千帆标识系统工程有限公司 | Multi-angle efficient electroplating device and method for metal label |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA929891A (en) * | 1968-08-07 | 1973-07-10 | Inoue Kiyoshi | Adaptive ion-control system for electrochemical machining |
US6848970B2 (en) * | 2002-09-16 | 2005-02-01 | Applied Materials, Inc. | Process control in electrochemically assisted planarization |
US20040182721A1 (en) * | 2003-03-18 | 2004-09-23 | Applied Materials, Inc. | Process control in electro-chemical mechanical polishing |
US6991528B2 (en) * | 2000-02-17 | 2006-01-31 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
US6582281B2 (en) * | 2000-03-23 | 2003-06-24 | Micron Technology, Inc. | Semiconductor processing methods of removing conductive material |
US7134934B2 (en) * | 2000-08-30 | 2006-11-14 | Micron Technology, Inc. | Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium |
JP2002093761A (en) * | 2000-09-19 | 2002-03-29 | Sony Corp | Polishing method, polishing system, plating method and plating system |
JP2002110592A (en) * | 2000-09-27 | 2002-04-12 | Sony Corp | Polishing method and apparatus |
US6866763B2 (en) * | 2001-01-17 | 2005-03-15 | Asm Nutool. Inc. | Method and system monitoring and controlling film thickness profile during plating and electroetching |
WO2002085570A2 (en) * | 2001-04-24 | 2002-10-31 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
US6837983B2 (en) * | 2002-01-22 | 2005-01-04 | Applied Materials, Inc. | Endpoint detection for electro chemical mechanical polishing and electropolishing processes |
US6951599B2 (en) * | 2002-01-22 | 2005-10-04 | Applied Materials, Inc. | Electropolishing of metallic interconnects |
JP3843871B2 (en) * | 2002-03-26 | 2006-11-08 | ソニー株式会社 | Electropolishing method and semiconductor device manufacturing method |
WO2004024394A1 (en) * | 2002-09-16 | 2004-03-25 | Applied Materials, Inc. | Control of removal profile in electrochemically assisted cmp |
TWI285576B (en) * | 2003-06-06 | 2007-08-21 | Applied Materials Inc | Conductive polishing article for electrochemical mechanical polishing |
US20070108066A1 (en) * | 2005-10-28 | 2007-05-17 | Applied Materials, Inc. | Voltage mode current control |
-
2006
- 2006-01-06 US US11/326,646 patent/US20070158201A1/en not_active Abandoned
- 2006-12-21 WO PCT/US2006/062476 patent/WO2007120357A2/en active Application Filing
- 2006-12-21 JP JP2008549523A patent/JP2009522810A/en active Pending
- 2006-12-26 TW TW095149050A patent/TW200733216A/en unknown
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