JP2009509340A5 - - Google Patents

Claims (15)

In an electron beam apparatus for processing a substrate,
An electron source including an anode and a cathode, a substrate support, and a grid configured to reduce charge damage to the substrate during electron beam processing, the grid being disposed between the anode and the substrate support A vacuum chamber comprising:
A low voltage source connected to the anode;
A high voltage source connected to the cathode;
A bias source connected to the grid;
A vacuum source for maintaining the substrate under vacuum;
An electron beam device with   The electron beam apparatus according to claim 1, wherein the vacuum chamber further comprises a cross lamp heating device in communication with the vacuum chamber.   The electron beam apparatus according to claim 2, wherein the cross lamp heating device is placed under the substrate support. The electron beam apparatus according to any one of claims 1 to 3, wherein the substrate support includes at least one thermocouple assembly communicating with the vacuum chamber. The electron beam apparatus according to any one of claims 1 to 3, wherein the vacuum chamber further includes a substrate bias source connected to the substrate support. The vacuum chamber further comprises at least one thermocouple assembly in communication with the vacuum chamber, the at least one thermocouple assembly comprising a resilient member configured to contact a surface of the substrate, the resilient force The electron beam apparatus according to claim 2 , wherein the sex member is made of a ceramic material. The cross lamp heating device, the first parallel array with two or more parallel arrays positioned to intersect the second spur row array, the electron beam apparatus according to claim 2 or 3. The vacuum chamber further comprises a connected plasma flood gun in the vacuum chamber, the plasma flood gun is adapted to introduce a low energy positive ions into the vacuum chamber, any one of claims 1 to 3 The electron beam apparatus according to one item . The electronic of claim 6 , wherein the at least one thermocouple assembly and the cross lamp heating device are in electronic communication with a controller configured to control the amount of heat released by the cross lamp heating device. Beam device. In a method of reducing charge damage to a substrate during electron beam processing,
Providing a chamber comprising a grid placed between an anode and a substrate support;
Applying a bias voltage to the grid, the bias voltage being applied under conditions sufficient to fully or partially neutralize the electron beam charge of the substrate;
With a method.   The method of claim 10, wherein the conditions are sufficient to reduce the charging current of the substrate to less than about 0.005 mA. The method of claim 10, wherein the bias voltage is a DC bias or an RF bias .   The method according to claim 10, wherein the substrate includes a low dielectric constant film, and the electron beam treatment of the low dielectric constant film includes forming a void in the low dielectric constant film. The method of any one of claims 10 to 13 , wherein the bias voltage is from about 3V to about 40V. The method of any one of claims 10 to 13 , wherein the bias voltage is between about -3V and about -30V.