JP2009508694A - ナノスケール共金属構造を用いて光を操作するための装置および方法 - Google Patents
ナノスケール共金属構造を用いて光を操作するための装置および方法 Download PDFInfo
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- JP2009508694A JP2009508694A JP2008528156A JP2008528156A JP2009508694A JP 2009508694 A JP2009508694 A JP 2009508694A JP 2008528156 A JP2008528156 A JP 2008528156A JP 2008528156 A JP2008528156 A JP 2008528156A JP 2009508694 A JP2009508694 A JP 2009508694A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
いことを認識するであろう。
110 光学ナノアンテナ
115 共軸部分
120 内側導体
140 導電性マトリックス
160 外側導体
180 光起電性材料
190 基板
Claims (42)
- 光を操作するためのナノスケール光学装置において、複数のナノスケール共金属構造を有し、該複数のナノスケール共金属構造の各々が第1の電気導体と第2の電気導体との間に誘電体材料を備えたことを特徴とするナノスケール光学装置。
- 前記誘電体材料は空気または真空である請求項1に記載のナノスケール光学装置。
- 前記第2の電気導体を越えて延在する前記第1の電気導体の突出部をさらに備える請求項1に記載のナノスケール光学装置。
- 前記複数のナノスケール共金属構造を支持する基板をさらに備える請求項1に記載のナノスケール光学装置。
- 前記第1の電気導体と前記第2の電気導体との間に透明導体をさらに備える請求項1に記載のナノスケール光学装置。
- 前記複数の共金属構造が直列に接続されるとともに前記誘電体材料は光起電性材料であり、総電圧が各共金属構造によって光生成された電圧の総計となる請求項1に記載のナノスケール光学装置。
- 前記複数の共金属構造が並列に接続されるとともに前記誘電体材料は光起電性材料であり、総電圧が各共金属構造によって光生成された前記電圧の最小値と最大値との間になる請求項1に記載のナノスケール光学装置。
- 前記ナノスケール光学装置は放射集光器として機能する請求項1に記載のナノスケール光学装置。
- 前記ナノスケール光学装置は光導波管として機能する請求項1に記載のナノスケール光学装置。
- 前記ナノスケール光学装置はビームスプリッタ(分光器)として機能する請求項1に記載のナノスケール光学装置。
- 前記ナノスケール光学装置は光カプラとして機能する請求項1に記載のナノスケール光学装置。
- 前記ナノスケール光学装置は光遮断部として機能する請求項1に記載のナノスケール光学装置。
- 前記ナノスケール光学装置は光混合部として機能する請求項1に記載のナノスケール光学装置。
- 前記ナノスケール光学装置は離散型光学装置として機能する請求項1に記載のナノスケール光学装置。
- 前記ナノスケール光学装置は光共振器として機能する請求項1に記載のナノスケール光学装置。
- 前記ナノスケール光学装置は周波数フィルタとして機能する請求項1に記載のナノスケール光学装置。
- 前記ナノスケール光学装置はナノスケール光学顕微鏡用に使用される請求項1に記載のナノスケール光学装置。
- 前記ナノスケール光学装置は光学スイッチとして機能する請求項1に記載のナノスケール光学装置。
- 前記ナノスケール光学装置はナノリソグラフィ用に使用される請求項1に記載のナノスケール光学装置。
- 前記ナノスケール光学装置は太陽電池として機能する請求項1に記載のナノスケール光学装置。
- 光を操作するための共軸ナノスケール光学装置において、複数のナノスケール共軸構造を備え、該複数のナノスケール共軸構造の各々が、誘電体材料と接触し外側導体層で被覆された導電性コアを有することを特徴とする共軸ナノスケール光学装置。
- 前記誘電体材料は前記導電性コアの一部と接触する請求項21に記載の共軸ナノスケール光学装置。
- 前記外側導体層を越えて延在する前記導電性コアの突出部をさらに備える請求項21に記載の共軸ナノスケール光学装置。
- 前記複数のナノスケール共軸構造を支持する基板をさらに備える請求項21に記載の共軸ナノスケール光学装置。
- 前記誘電体材料は光電半導体で構成されるp−n接合を含む光起電性材料である請求項21に記載の共軸ナノスケール光学装置。
- 前記誘電体材料は、p型半導体層、真性光電半導体層、およびn型半導体層で形成されるp−i−n接合を含む光起電性材料である請求項21に記載の共軸ナノスケール光学装置。
- 前記導電性コアと前記外側導体層との間に透明導体をさらに備える請求項21に記載の共軸ナノスケール光学装置。
- 前記複数の共軸構造が直列に接続されるとともに前記誘電体材料は光起電性であり、総光電電圧が各共軸構造によって光生成された電圧の総計となる請求項21に記載の共軸ナノスケール光学装置。
- 前記複数の共軸構造が並列に接続されるとともに前記誘電体材料は光起電性であり、総光電電圧が各共金属構造によって光生成された電圧の最小値と最大値との間になる請求項21に記載の共軸ナノスケール光学装置。
- 光を操作するための共平面ナノスケール光学装置において、複数のナノスケール共平面構造を有し、該複数のナノスケール共平面構造の各々が第1の導電層と第2の導電層との間に誘電体層を備え、
光が前記第1の導電層と前記第2の導電層との間の前記共平面構造に入射することを特徴とする共平面ナノスケール光学装置。 - 前記誘電体層は空気または真空である請求項30に記載の共平面ナノスケール光学装置。
- 前記第1の導電層は前記第2の導電層に略平行である請求項30に記載の共平面ナノスケール光学装置。
- 前記第2の導電層を越えて延在する前記第1の導電層の突出部をさらに備える請求項30に記載の共平面ナノスケール光学装置。
- 前記複数のナノスケール共平面構造を支持する基板をさらに備える請求項30に記載の共平面ナノスケール光学装置。
- 前記第1の導電層と前記第2の導電層は前記光電層を介してのみ電気的に接触する請求項30に記載の共平面ナノスケール光学装置。
- 前記誘電体層は平面p−n接合を含む光起電性材料である請求項30に記載の共平面ナノスケール光学装置。
- 前記誘電体層は、p型半導体層、真性光電半導体層、およびn型半導体層で形成される平面p−i−n接合を含む光起電性材料である請求項30に記載の共平面ナノスケール光学装置。
- 前記第1の導電層と前記第2の導電層との間に透明導体をさらに備える請求項30に記載の共平面ナノスケール光学装置。
- 前記複数の共平面構造が直列に接続されるとともに前記誘電体層は光起電性であり、総光電電圧が各共平面構造によって光生成された電圧の総計となる請求項30に記載の共平面ナノスケール光学装置。
- 前記複数の共平面構造が並列に接続されるとともに前記誘電体層は光起電性であり、総光電電圧が各共金属構造によって光生成された電圧の最小値と最大値との間になる請求項30に記載の共平面ナノスケール光学装置。
- 光を操作するためのナノスケール光学装置を製造する方法において、
複数のナノスケール平面構造を準備するステップと、
前記複数の平面間の空隙を残しつつ、前記複数の平面構造の複数の平面を誘電体で被覆するステップと、
前記誘電体を外側導体層で被覆するステップと、を備え、
前記外側導体層の一部を前記平面構造間に配置して共平面構造を形成することを特徴とするナノスケール光学装置の製造方法。 - 前記誘電体は前記複数の平面構造の前記複数の平面をコンフォーマルに被覆する請求項41に記載の方法。
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US11/401,606 US7754964B2 (en) | 2005-08-24 | 2006-04-10 | Apparatus and methods for solar energy conversion using nanocoax structures |
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