JP2009302987A - Semiconductor integrated circuit - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit facilitating integration and including impedance matching circuits adaptive to a plurality of frequency bands. <P>SOLUTION: The semiconductor integrated circuit includes: external connection terminals OUT, /OUT; first and second amplifiers 1077, 1078; and first and second matching circuits 1091 1092. The amplifiers 1077, 1078 amplifies first and second input signals Vin1, Vin 2 with first and second frequencies. The matching circuits 1091, 1092 supply the outputs of the amplifiers 1077, 1078 to the external connection terminals. An external circuit 124 is connectable to the external connection terminals. The matching circuits 1091, 1092 include reactance elements Ls1, Ls2, so as to allow the output impedance Zout to match with the input impedance Zin of the external circuit 124. When the first input signal is transmitted, one and the other of the first and second amplifiers are controlled to be activated and deactivated states. When the second input signal is transmitted, the controlled states are reversed. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a semiconductor integrated circuit having a transmission function or a reception function used for RF communication such as a mobile phone and a wireless LAN, and particularly relates to a technique effective for obtaining impedance matching at a plurality of frequencies.

  Various communication systems such as cellular and wireless LAN such as GSM, GPRS, EDGE, WCDMA, DCS, and PCS have been developed, but in recent years, a single terminal supports multiple communication systems and transmission / reception frequency bands. / Multiband transceivers are craved. GSM is an abbreviation for Global System for Mobile Communication, and GPRS is an abbreviation for General Packet Radio Service. EDGE is an abbreviation for Enhanced Data for GSM Evolution; Enhanced Data for GPRS. WCDMA is an abbreviation for Wideband Code Division Multiple Access. DCS is an abbreviation for Digital Cellular System. PCS is an abbreviation for Personal Communication System.

  Non-Patent Document 1 below describes a 2100, 1900, 850/800 MHz tri-band third generation cellular transceiver integrated circuit (IC) for worldwide use. This RF transceiver integrates baseband signal processing ICs of tri-band WCDMA and quad-band GSM / EDGE. Non-Patent Document 1 below describes the following six frequency bands proposed by 3GPP. 3GPP is an abbreviation for 3-rd Generation Partnership Project.

Band Uplink Downlink Unit Region Band I: 1920-1980 2110-2170 MHz Europe Band II: 1850-1910 1930-1990 MHz United States Band III: 1710-1785 1805-1880 MHz Europe Band IV: 1710-1755 2110-2155 MHz United States Band V: 824-849 869-894 MHz United States Band VI: 830-840 875-855 MHz Japan Furthermore, the RF integrated transceiver described in Non-Patent Document 1 below is based on the downlink frequencies of the bands III and V described above. It includes a receiver to which an RF reception signal is supplied, a transmitter that forms an RF transmission signal of the band III and V uplink frequencies, and a frequency synthesizer. The frequency synthesizer consists of two fractional-N synthesizers with two integrated voltage controlled oscillators (VCOs) for the receiver and transmitter. As is well known, by using a fractional N synthesizer, by setting the frequency divider of the PLL circuit to a fraction (fraction) as well as an integer, an oscillation frequency other than an integer multiple of the reference frequency can be set. It is obtained from the output of a voltage controlled oscillator (VCO).

  The receiver is supplied with a first reception mixer to which an RF reception signal having a downlink frequency of approximately 2 GHz for band I and band II is supplied, and an RF reception signal having a downlink frequency of approximately 0.9 GHz for band V. A second receiving mixer. A frequency divider for receiving that can be set to 2 and 4 between the voltage-controlled oscillator for reception (RxVCO) covering the frequency band of 3476 to 4340 MHz and the first and second receiving mixers. Is connected.

  The transmitter generates a first transmission mixer that generates an RF transmission signal having an uplink frequency of approximately 1.9 GHz for band I and band II, and an RF transmission signal having an uplink frequency of approximately 0.8 GHz for band V. A second transmission mixer. A first transmission frequency divider having a frequency division number set to 2 is connected between the transmission voltage controlled oscillator (TXVCO) covering the frequency band of 3296 to 3960 MHz and the first transmission mixer. Between the voltage controlled oscillator (TXVCO) and the second transmission mixer, a second transmission frequency divider whose frequency division number can be set to 4 is connected.

  Patent Document 1 below describes that an impedance matching circuit that can be switched by a PIN diode and that provides a load impedance suitable for at least two fundamental frequency bands is connected to a power amplifier.

  On the other hand, in Non-Patent Document 2 below, a ferroelectric material made of barium strontium titanate (BST) is used as a tunable capacitor in order to realize a quad-band mobile phone of GSM850, GSM900, DCS, and PCS. The use is described. By using a ferroelectric capacitor and a coplanar waveguide, a 3-3.5Ω load line (Zin) is shown in the low band (LB), while a 4-4.5Ω load line (Zin) is shown in the high band (HB). A low-pass output matching circuit is formed.

D. L. Kaczman et al, “A Single-Chip Tri-Band (2100, 1900, 850/800 MHz) WCDMA / HSDPA Cellular Transceiver”, IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOC. 41, NO. 5, MAY 2006, PP. 1122-1132. Ali Tombak, “A Ferroelectric-Capacitor-Based Tunable Matching Network for Quad-Band Cellular Power Amplifiers”, IEEE TRANSACTIONS ON TEMICROVAND 55, N0.2, FEBRUARY 2007, PP. 370-375. JP-T-2001-512642

  Prior to the present invention, the inventors engaged in the development of a radio frequency signal processing semiconductor integrated circuit (hereinafter referred to as RFIC) that supports both the GSM communication system and the WCDMA (UMTS) communication system.

  FIG. 1 is a diagram showing a configuration of a radio frequency signal processing semiconductor integrated circuit (hereinafter referred to as RFIC) 10 that supports both the GSM communication system and the WCDMA communication system studied by the present inventors prior to the present invention. It is.

<< RFIC studied prior to the present invention >>
The RFIC 10 shown in FIG. 1 includes a WCDMA reception block 101, a GSM reception block 102, a first local signal generation block 103, and a GSM / WCDMA / baseband reception processing block 104. The RFIC 10 includes a GSM transmission block 105, a second local signal generation block 106, a WCDMA transmission block 107, and a GSM / WCDMA / baseband transmission processing block 108.

  The RFIC 10 of FIG. 1 is supplied with RF reception signals of the WCDMA communication system and the GSM communication system from the antenna 14 of the mobile phone terminal via the front end module 13. The GSM transmission signal and the WCDMA transmission signal formed from the RFIC 10 in FIG. 1 are supplied to the antenna 14 of the mobile phone terminal via the GSM / RF power amplifier module 11, the WCDMA / RF power amplifier module 12, and the front end module 13. .

<< Reception of WCDMA >>
A WCDMA reception signal of band 1 (2110 to 2170 MHz) received by the antenna 14 of the mobile phone terminal is first supplied to the antenna switch 1300 of the front end module 13. Thereafter, the WCDMA reception signal of band 1 is supplied to the low noise amplifier 1010 for band 1 of the WCDMA reception block 101 of the RFIC 10 via the duplexer 1301 for band 1 and the matching circuit 1308. The band 1 WCDMA reception signal amplified by the low noise amplifier 1010 is supplied to the first reception mixer 1013 via the band pass filter 151 for band 1. The first reception mixer 1013 is supplied with the band 1 reception local signal (2110 to 2170 MHz) generated from the first local signal generation block 103. Accordingly, the first reception mixer 1013 performs direct down conversion (DDC) of the band 1 WCDMA reception amplification signal. Band 1 WCDMA reception analog baseband signals I and Q formed by DDC are passed through variable gain amplifiers 1041_I, Q, 1043_I, Q, 1045_I, Q, low-pass filters 1042_I, Q, 1044_I, Q, 1046_I, Q. The A / D converters 1047_I and Q are supplied. The band 1 WCDMA received digital baseband signals RxDB_I and RxDB_Q converted from the A / D converters 1047_I and Q are supplied to a baseband signal processing unit (not shown) formed of another LSI.

  A band 9 (1749.9 to 1879.9 MHz) WCDMA reception signal received by the antenna 14 is first supplied to the antenna switch 1300 of the front end module 13. Thereafter, the WCDMA reception signal of the band 9 is supplied to the low noise amplifier 1011 for the band 9 of the WCDMA reception block 101 of the RFIC 10 via the duplexer 1302 for the band 9 of the front end module 13 and the matching circuit 1309. The The band 9 WCDMA reception signal amplified by the low noise amplifier 1011 is supplied to the second reception mixer 1014 via the band pass filter 152 for the band 9. The second reception mixer 1014 is supplied with the band 9 reception local signal (1749.9 to 1879.9 MHz) generated from the first local signal generation block 103. Accordingly, the second reception mixer 1014 performs direct down conversion (DDC) of the band 9 WCDMA reception amplification signal. Band 9 WCDMA reception analog baseband signals I and Q formed by DDC are passed through variable gain amplifiers 1041_I, Q, 1043_I, Q, 1045_I, Q, low-pass filters 1042_I, Q, 1044_I, Q, 1046_I, Q. The A / D converters 1047_I and Q are supplied. The band 9 WCDMA received digital baseband signals RxDB_I and RxDB_Q converted from the A / D converters 1047_I and Q are supplied to a baseband signal processing unit (not shown) formed of another LSI.

  The WCDMA reception signal of band 6 (875 to 885 MHz) received by the antenna 14 is first supplied to the antenna switch 1300 of the front end module 13. Thereafter, the WCDMA reception signal of band 6 is supplied to the low noise amplifier 1012 for band 1 of the WCDMA reception block 101 of the RFIC 10 via the duplexer 1303 for band 6 of the front end module 13 and the matching circuit 1310. The The band 6 WCDMA reception signal amplified by the low noise amplifier 1012 is supplied to the third reception mixer 1015 via the band pass filter 153 for band 6. The third reception mixer 1015 is supplied with the band 6 reception local signal (875 to 885 MHz) generated from the first local signal generation block 103. Therefore, the third reception mixer 1015 performs direct down conversion (DDC) of the band 6 WCDMA reception amplification signal. Band 6 WCDMA reception analog baseband signals I and Q formed by DDC are passed through variable gain amplifiers 1041_I, Q, 1043_I, Q, 1045_I, Q, low-pass filters 1042_I, Q, 1044_I, Q, 1046_I, Q. The A / D converters 1047_I and Q are supplied. The band 6 WCDMA reception digital baseband signals RxDB_I and RxDB_Q converted from the A / D converters 1047_I and Q are supplied to a baseband signal processing unit (not shown) formed of another LSI.

<< Reception of GSM >>
A reception signal of DCS 1800 (1805 to 1850 MHz) received by the antenna 14 of the mobile phone terminal is first supplied to the antenna switch 1300 of the front end module 13. Thereafter, the received signal of DCS 1800 is supplied to low noise amplifier 1020 for DCS 1800 of GSM reception block 102 of RFIC 10 via surface acoustic wave filter 1304 and matching circuit 1311. The DCS 1800 reception signal amplified by the low noise amplifier 1020 is supplied to the fourth reception mixer 1024. The fourth reception mixer 1024 is supplied with the DCS 1800 reception local signal (1805 to 1850 MHz) generated from the first local signal generation block 103. Accordingly, the fourth reception mixer 1024 performs direct down conversion (DDC) of the received signal of the DCS 1800. Received analog baseband signals I and Q of DCS 1800 of band 6 formed by DDC are passed through variable gain amplifiers 1041_I, Q, 1043_I, Q, 1045_I, Q, low-pass filters 1042_I, Q, 1044_I, Q, 1046_I, Q And supplied to the A / D converters 1047_I and Q. The received digital baseband signals RxDB_I and RxDB_Q of the DCS 1800 converted from the A / D converters 1047_I and Q are supplied to a baseband signal processing unit (not shown) composed of another LSI.

  A reception signal of PCS 1900 (1930 to 1990 MHz) received by the antenna 14 of the mobile phone terminal is first supplied to the antenna switch 1300 of the front end module 13. Thereafter, the reception signal of the PCS 1900 is supplied to the low noise amplifier 1021 for the PCS 1900 of the GSM reception block 102 of the RFIC 10 via the surface acoustic wave filter 1305 and the matching circuit 1312. The PCS 1900 reception signal amplified by the low noise amplifier 1021 is supplied to the fourth reception mixer 1024. The fourth reception mixer 1024 is supplied with a PCS 1900 reception local signal (1930 to 1990 MHz) generated from the first local signal generation block 103. Accordingly, the fourth reception mixer 1024 performs direct down conversion (DDC) of the PCS 1900 reception signal. The received analog baseband signals I and Q of the PCS 1900 formed by the DDC are converted to A / V via the variable gain amplifiers 1041_I, Q, 1043_I, Q, 1045_I, Q, low-pass filters 1042_I, Q, 1044_I, Q, 1046_I, Q. The D converters 1047_I and Q are supplied. The received digital baseband signals RxDB_I and RxDB_Q of the PCS 1900 converted from the A / D converters 1047_I and Q are supplied to a baseband signal processing unit (not shown) composed of another LSI.

  A GSM850 (869 to 894 MHz) reception signal received by the antenna 14 of the mobile phone terminal is first supplied to the antenna switch 1300 of the front end module 13. Thereafter, the received signal of GSM850 is supplied to low noise amplifier 1022 for GSM850 of GSM receiving block 102 of RFIC 10 via surface acoustic wave filter 1306 and matching circuit 1313. The GSM850 reception signal amplified by the low noise amplifier 1022 is supplied to the fifth reception mixer 1025. The fifth reception mixer 1025 is supplied with a GSM850 reception local signal (869 to 894 MHz) generated from the first local signal generation block 103. Therefore, the fifth reception mixer 1025 performs direct down conversion (DDC) of the GSM850 received signal. The received analog baseband signals I and Q of the GSM850 formed by the DDC are converted to A / V via the variable gain amplifiers 1041_I, Q, 1043_I, Q, 1045_I, Q, and the low-pass filters 1042_I, Q, 1044_I, Q, 1046_I, Q. The D converters 1047_I and Q are supplied. The GSM850 received digital baseband signals RxDB_I and RxDB_Q converted from the A / D converters 1047_I and Q are supplied to a baseband signal processing unit (not shown) formed of another LSI.

  A reception signal of EGSM (GSM 900: 925 to 950 MHz) received by the antenna 14 of the mobile phone terminal is first supplied to the antenna switch 1300 of the front end module 13. Thereafter, the EGSM reception signal is supplied to the low noise amplifier 1023 for EGSM of the GSM reception block 102 of the RFIC 10 via the surface acoustic wave filter 1307 and the matching circuit 1314. The EGSM reception signal amplified by the low noise amplifier 1023 is supplied to the fifth reception mixer 1025. The fifth reception mixer 1025 is supplied with an EGSM reception local signal (925 to 950 MHz) generated from the first local signal generation block 103. Accordingly, the fifth reception mixer 1025 performs direct down conversion (DDC) of the received signal of EGSM. The received analog baseband signals I and Q of the EGSM formed by the DDC are converted to A / V via the variable gain amplifiers 1041_I, Q, 1043_I, Q, 1045_I, Q, and the low-pass filters 1042_I, Q, 1044_I, Q, 1046_I, Q. The D converters 1047_I and Q are supplied. The EGSM received digital baseband signals RxDB_I and RxDB_Q converted from the A / D converters 1047_I and Q are supplied to a baseband signal processing unit (not shown) constituted by another LSI.

《GSM transmission》
The transmission digital baseband signals TxDB_I and TxDB_Q of EGSM and GSM850 supplied from the baseband signal processing unit (not shown) to the RFIC 10 are converted by D / A converters 1081 and 1082 of the GSM / WCDMA / baseband transmission processing block 108. It is converted into a transmission analog baseband signal.

  DCS 1800 and PCS 1900 transmission digital baseband signals TxDB_I and TxDB_Q supplied to the RFIC 10 from a baseband signal processing unit (not shown) are also converted by the D / A converters 1081 and 1082 of the GSM / WCDMA baseband transmission processing block 108. It can be converted to a transmitted analog baseband signal.

  The transmission analog baseband signal of EGSM and GSM850 or the transmission analog baseband signal of DCS 1800 and PCS 1900 is supplied to mixer 1050 of GSM transmission block 105. The GSM transmission block 105 is configured by an offset PLL circuit format, and an IF mixer 1050 is supplied with an intermediate frequency local signal of approximately 80 MHz generated from the frequency divider 1034 of the first local signal generation block 103. Accordingly, the transmission IF signal generated from the IF mixer 1050 is supplied to one input terminal of the phase comparator 1052 via the low-pass filter 1051. The output of the phase comparator 1052 is supplied to the transmission voltage controlled oscillator 1054 through the low pass filter 1053. Since the outputs of the frequency dividers 1055 and 1056 connected to the output of the transmission voltage controlled oscillator 1054 are supplied to the other input terminal of the phase comparator 1052 via the feedback circuit 1057, they are generated from the transmission voltage controlled oscillator 1054. The phase of the RF transmission signal matches the phase of the transmission IF signal generated from the F mixer 1050. Therefore, in GSM communication of any one of EGSM, GSM850, DCS1800, and PCS1900, the RF transmission signal generated from the transmission voltage controlled oscillator 1054 includes accurate phase information by phase modulation of the transmission analog baseband signal.

  When any one of the EGSM, GSM850, DCS1800, and PCS1900 GSM communication includes phase information by phase modulation and amplitude information by amplitude modulation, the amplitude information of the transmission IF signal generated from the IF mixer 1050 is low-pass. The signal is supplied to one input terminal of the feedforward circuit 1058 through the filter 1051.

  A part of the RF transmission amplification signal of the first RF power amplifier 111 that amplifies the EGSM and GSM850 RF transmission signals is supplied to the other input terminal of the feedforward circuit 1058 via the first power coupler and the feedback circuit 1057. . The output signal of the feedforward circuit 1058 is supplied to the transmission power control circuit 110 of the GSM / RF power amplifier module 11 via the control circuit 1059. Control circuit 1059 so that the amplitude information of the transmission IF signal supplied to one input terminal and the other input terminal of feedforward circuit 1058 matches a part of the RF transmission amplification signal of first RF power amplifier 111. The transmission power control circuit 110 controls the amplification gain of the first RF power amplifier 111. Part of the RF transmission amplified signal of the second RF power amplifier 112 that amplifies the DCS 1800 and PCS 1900 RF transmission signals is supplied to the other input terminal of the feedforward circuit 1058 via the second power coupler and the feedback circuit 1057. . The output signal of the feedforward circuit 1058 is supplied to the transmission power control circuit 110 of the GSM / RF power amplifier module 11 via the control circuit 1059. The control circuit 1059 so that the amplitude information of the transmission IF signal supplied to one input terminal and the other input terminal of the feedforward circuit 1058 coincides with a part of the RF transmission amplification signal of the second RF power amplifier 112. The transmission power control circuit 110 controls the amplification gain of the second RF power amplifier 112. Therefore, when any one of the EGSM, GSM850, DCS1800, and PCS1900 GSM communications includes phase information based on phase modulation and amplitude information based on amplitude modulation, the RF transmission signal generated from the transmission voltage controlled oscillator 1054 is It includes accurate phase information by phase modulation of the transmission analog baseband signal and accurate amplitude information by amplitude modulation.

  The transmission power control circuit 110 controls the power supply voltage level supplied to the first and second RF power amplifiers 111 and 112 in response to the output level of the control circuit 1059 of the GSM transmission block 105 of the offset PLL. In addition, the amplification gain of the second RF power amplifiers 111 and 112 is controlled.

  The frequency of the RF transmission signal of EGSM is set to 889 to 915 MHz, and the frequency of the RF transmission signal of GSM850 is set to 824 to 849 MHz. Further, the frequency of the RF transmission signal of DCS 1800 is set to 1710 to 1785 MHz, and the frequency of the RF transmission signal of PCS 1900 is set to 1850 to 1910 MHz.

<< Transmission of WCDMA >>
The WCDMA band 1 or 6 or 9 transmission digital baseband signals TxDB_I and TxDB_Q supplied from the baseband signal processing unit (not shown) to the RFIC 10 are the D / D of the GSM / WCDMA baseband transmission processing block 108. The A converters 1081 and 1082 are supplied. The WCDMA band 1, band 6, or band 9 transmission analog baseband signal converted by the D / A converters 1081 and 1082 is supplied to the multiplexer 1082.

  The WCDMA band 6 transmission analog baseband signal is supplied from the multiplexer 1082 to the first transmission mixer 1073 via the low-pass filter 1070 and the other multiplexer 1072. The first transmission mixer 1073 is supplied with the band 6 transmission local signal (830 to 840 MHz) generated from the second local signal generation block 106. Accordingly, the first transmission mixer 1073 performs direct up-conversion (DUC) of the band 6 WCDMA transmission analog baseband signal. The band 6 WCDMA / RF transmission signal formed by DUC and set to a frequency of 830 to 840 MHz is supplied to the WCDMA / RF power amplifier module 12 via the variable gain amplifier 1075 and the driver amplifier 1077. In the WCDMA RF power amplifier module 12, the band 6 WCDMA RF transmission signal is amplified by the RF power amplifier 1220 through the surface acoustic wave bandpass filter 1210 for the band 6. The band 6 WCDMA / RF transmission amplification signal from the RF power amplifier 1220 is supplied to the antenna 14 of the mobile phone terminal via the band 6 isolator 1317, duplexer 1303, and antenna switch 1300.

  The transmission analog baseband signal of WCDMA band 9 is supplied from the multiplexer 1082 to the second transmission mixer 1074 via the other low-pass filter 1071 and the other multiplexer 1072. The second transmission mixer 1074 is supplied with a band 9 transmission local signal (1749.9 to 1784.9 MHz) generated from the second local signal generation block 106. Accordingly, the second transmission mixer 1074 performs direct up-conversion (DUC) of the band 9 WCDMA transmission analog baseband signal. The band 9 WCDMA / RF transmission signal formed by the DDC and set to a frequency of 1749.9 to 1784.9 MHz is supplied to the WCDMA / RF power amplifier module 12 via the variable gain amplifier 1076 and the driver amplifier 1078. . In the WCDMA / RF power amplifier module 12, the band 9 WCDMA / RF transmission signal is amplified by the RF power amplifier 1221 through the surface acoustic wave bandpass filter 1211 for the band 9. The band 9 WCDMA / RF transmission amplification signal from the RF power amplifier 1221 is supplied to the antenna 14 of the mobile phone terminal via the isolator 1318, the duplexer 1302, and the antenna switch 1300 for the band 9.

  The WCDMA band 1 transmission analog baseband signal is supplied from the multiplexer 1082 to the second transmission mixer 1074 via the other low-pass filter 1071 and the other multiplexer 1072. The second transmission mixer 1074 is supplied with the band 1 transmission local signal (1920 to 1980 MHz) generated from the second local signal generation block 106. Accordingly, the second transmission mixer 1074 performs direct up-conversion (DUC) of the band 1 WCDMA transmission analog baseband signal. The band 1 WCDMA / RF transmission signal formed by DUC and having a frequency set to 1920 to 1980 MHz is supplied to the WCDMA / RF power amplifier module 12 via the variable gain amplifier 1076 and the driver amplifier 1079. In the WCDMA RF power amplifier module 12, the band 1 WCDMA RF transmission signal is amplified by the RF power amplifier 1222 through the surface acoustic wave bandpass filter 1212 for band 1. The band 1 WCDMA / RF transmission amplification signal from the RF power amplifier 1222 is supplied to the antenna 14 of the mobile phone terminal via the band 1 isolator 1319, duplexer 1301, and antenna switch 1300.

<< Problems with RFIC >>
The RFIC studied by the present inventors prior to the present invention shown in FIG. 1 is divided into a WCDMA reception tri band, three different reception frequencies, a GSM reception quad band, and four different reception frequencies. It is necessary to respond. Also, the RFIC of FIG. 1 needs to support a tri-band for WCDMA transmission, three different transmission frequencies, a quad band for GSM transmission, and four different transmission frequencies.

  In FIG. 1, the input impedances of the three low noise amplifiers 1010, 1011, and 1012 that receive WCDMA RF reception signals having three different reception frequencies are different from each other. Accordingly, the output impedances of the three input matching circuits 1308, 1309, and 1310 for obtaining appropriate impedance matching with the three low noise amplifiers 1010, 1011, and 1012 are different from each other. As is well known, in order to obtain appropriate impedance matching between two circuits facing each other, the impedance of the two circuits is made into a complex conjugate relationship, and mutual reactance components are canceled out from each other.

  In FIG. 1, the four low noise amplifiers 1020, 1021, 1022, and 1023 that receive GSM RF reception signals having four different reception frequencies have different input impedances. Accordingly, the output impedances of the four low-noise amplifiers 1020, 1021, 1022, and 1023 and the four input matching circuits 1311, 1312, 1313, and 1314 for obtaining appropriate impedance matching are different from each other. As is well known, in order to obtain appropriate impedance matching between two circuits facing each other, the impedance of the two circuits is made into a complex conjugate relationship, and mutual reactance components are canceled out from each other.

  The three input matching circuits 1308, 1309, and 1310 for WCDMA reception and the four input matching circuits 1311, 1312, 1313, and 1314 for GSM reception include an inductance having a large inductance and a capacitor having a large capacitance. Therefore, these seven input matching circuits 1308, 1309, 1310, 1311, 1312, 1313, and 1314 are constituted by discrete components outside the RFIC 10, and there is a problem that the number of external terminals of the RFIC 10 is large. It was said.

  Also, in FIG. 1, three surface acoustic wave bandpass filters 1210, 1211 connected to three RF power amplifiers 1220, 1221, 1222 for transmitting WCDMA RF transmission signals of three different transmission frequencies, respectively. , 1212 have different input impedances. Accordingly, the output impedances of the three driver amplifiers 1077, 1078, and 1079 for obtaining appropriate impedance matching with the three surface acoustic wave bandpass filters 1210, 1211, and 1212 are different from each other.

  Furthermore, the input impedance of the first RF power amplifier 111 that amplifies the RF transmission signals of EGSM and GSM850 in FIG. 1 and the input impedance of the second RF power amplifier 112 that amplifies the RF transmission signals of DCS 1800 and PCS 1900 are different from each other. Accordingly, although not shown in FIG. 1, the output impedance of the EGSM / GSM850 driver amplifier that drives the input of the first RF power amplifier 111 and the DCS / PCS driver amplifier that drives the input of the second RF power amplifier 112 inside the RFIC 10. The output impedance is different from each other. Therefore, these five RF power amplifiers 111, 112, 1220, 1221, and 1222 are constituted by external parts of the RFIC 10, and the problem that the number of external terminals of the RFIC 10 is large is clarified.

  Therefore, in order to solve the problem that the number of external terminals of the RFIC 10 shown in FIG. 1 is large, the present inventors have provided an impedance matching circuit that provides a load impedance suitable for a plurality of fundamental frequency bands described in Patent Document 1. Was considered to be incorporated in the RFIC 10.

  However, although the PIN diode as a switching element for switching the impedance matching circuit can be constituted by discrete components outside the RFIC, it has been found difficult to form inside the RFIC. In contrast to a general PN diode in which a P-type semiconductor and an N-type semiconductor are in contact with each other through a junction, in the PIN diode, an P-type semiconductor and an N-type semiconductor are connected via an intrinsic semiconductor called an I-type semiconductor having an extremely low impurity concentration. Are in contact. As a result, compared with a general PN diode, the parasitic capacitance between terminals of the PIN diode in the off state is extremely small, and the change in parasitic capacitance due to the change in the reverse bias voltage is also extremely small. However, since it is difficult to form the PIN diode inside the RFIC, it is difficult to integrate the impedance matching circuit using the PIN diode described in Patent Document 1 in the RFIC 10.

  Furthermore, the series resistance between the terminals of the PIN diode in the on state causes a reduction in power efficiency due to loss of transmission power during RF transmission, and it is difficult to receive low noise due to thermal noise at the series resistance between terminals during RF reception. It was also revealed that this would cause a problem.

  Next, in order to solve the problem that the number of external terminals of the RFIC 10 shown in FIG. 1 is large, the present inventors incorporate a tunable capacitor made of a ferroelectric material described in Non-Patent Document 2 in the RFIC 10. I thought.

  However, tunable capacitors made of ferroelectric materials are feared that ferroelectric materials such as barium, strontium, and titanate (BST) that constitute tunable capacitors may cause contamination in the semiconductor manufacturing process of RFIC. It has been found difficult to integrate the IC into the RFIC 10.

  The present invention has been made as a result of the study of the present inventors prior to the present invention as described above.

  Accordingly, an object of the present invention is to provide a semiconductor integrated circuit including an impedance matching circuit that is easy to integrate and conforms to a plurality of frequency bands.

  Another object of the present invention is to improve power efficiency by reducing loss of transmission power during RF transmission. Still another object of the present invention is to reduce the thermal noise during RF reception and enable low noise reception.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  A typical one of the inventions disclosed in the present application will be briefly described as follows.

  That is, a typical semiconductor integrated circuit of the present invention includes an external connection terminal (OUT, / OUT), a first amplifier (1077), a second amplifier (1078), a first matching circuit (1091), 2 matching circuit (1092).

  The first amplifier 1077 amplifies a first input signal Vin1 having a first frequency, and the second amplifier 1078 amplifies a second input signal Vin2 having a second frequency.

  The first and second matching circuits (1091, 1092) supply first and second output signals from the first and second amplifiers to the external connection terminals, respectively. An external circuit (124) capable of supplying the first and second output signals can be connected to the external connection terminal. The first and second matching circuits (1091, 1092) include first and second reactance elements (Ls1, Ls2), respectively. Thereby, the output impedance (Zout) of the first and second matching circuits (1091, 1092) and the input impedance (Zin) of the external circuit (124) can be matched.

  When the first input signal is transmitted, one and the other of the first and second amplifiers are controlled to be activated and deactivated, respectively, and the control state is inverted when the second input signal is transmitted (FIG. 2).

  The effects obtained by the representative ones of the inventions disclosed in the present application will be briefly described as follows. That is, it is possible to provide a semiconductor integrated circuit including an impedance matching circuit adapted to a plurality of frequency bands while being easily integrated.

<Typical embodiment>
First, an outline of a typical embodiment of the invention disclosed in the present application will be described. The reference numerals in the drawings referred to with parentheses in the outline description of the representative embodiments merely exemplify what are included in the concept of the components to which the reference numerals are attached.

  [1] A semiconductor integrated circuit according to a typical embodiment of the present invention includes an external connection terminal (OUT, / OUT), a first amplifier (1077), a second amplifier (1078), and a first matching circuit ( 1091) and a second matching circuit (1092).

  The first amplifier (1077) may amplify a first input signal (Vin1) having a first frequency to form a first output signal, and the second amplifier (1078) may generate a first output signal. It is possible to amplify a second input signal (Vin2) having a higher second frequency to form a second output signal.

  The first matching circuit (1091) can supply the first output signal supplied from the first amplifier to the external connection terminal, and the second matching circuit (1092) is supplied from the second amplifier. The supplied second output signal can be supplied to the external connection terminal.

  An external circuit (124) capable of supplying the first output signal and the second output signal can be connected to the external connection terminal outside the semiconductor integrated circuit.

  The first matching circuit (1091) includes at least first reactance elements (Ls1, Lo1) (see FIGS. 2 and 6). Accordingly, the output impedance (Zout) of the first matching circuit that supplies the first output signal of the first frequency to the external connection terminal is the external impedance to which the first output signal of the first frequency is supplied. Matching with the input impedance (Zin) of the circuit (124) is possible (see FIGS. 4A and 7A).

  The second matching circuit (1092) includes at least second reactance elements (Ls2, Lo2) (see FIGS. 2 and 6). Accordingly, the output impedance (Zout) of the second matching circuit that supplies the second output signal of the second frequency to the external connection terminal is the external impedance to which the second output signal of the second frequency is supplied. Matching with the input impedance (Zin) of the circuit (124) is possible (see FIGS. 4B and 7B).

  When the first amplifier is activated and the first amplifier supplies the first output signal of the first frequency to the external circuit via the first matching circuit and the external connection terminal. The second amplifier is deactivated.

  When the second amplifier is activated and the second amplifier supplies the second output signal of the second frequency to the external circuit via the second matching circuit and the external connection terminal. The first amplifier is deactivated (see FIGS. 2 and 6).

  According to the embodiment, since the first reactance element of the first matching circuit and the second reactance element of the second matching circuit can be easily integrated, integration is easy. In addition, a semiconductor integrated circuit including an impedance matching circuit adapted to a plurality of frequency bands can be provided.

  According to the embodiment, the impedance matching at the first frequency and the impedance matching at the second frequency are switched by switching between activation and deactivation of the first amplifier and the second amplifier. Is done. Therefore, loss of transmission power during RF transmission can be reduced and power efficiency can be improved.

  In a preferred embodiment, the first reactance element (Ls1) of the first matching circuit (1091) is connected between an output terminal of the first amplifier and the external connection terminal, and the second matching circuit ( The second reactance element (Ls2) 1092) is connected between the output terminal of the second amplifier and the external connection terminal. The first matching circuit and the second matching circuit share an output circuit (1090) connected to the external connection terminals (OUT, / OUT). The output circuit includes at least a third reactance element (Cp) connected to the external connection terminal (see FIG. 2).

  In a more preferred embodiment, the first reactance element of the first matching circuit and the second reactance element of the second matching circuit are inductors, and the third reactance element of the output circuit is a capacitor or an inductor. (See FIG. 2).

  In another more preferred embodiment, the third reactance element of the output circuit can be controlled by a control signal (Cp_Cnt) (see FIG. 2).

  In another preferred embodiment, the first reactance element (Lo1) of the first matching circuit (1091) is connected to an output terminal of the first amplifier, and the second matching circuit (1092) includes the second reactance element (Lo1). The reactance element (Lo2) is connected to the output terminal of the second amplifier. The first matching circuit (1091) includes third reactance elements (Cs1, Ls1) connected between the output terminal of the first amplifier and the external connection terminal. The second matching circuit (1092) includes a fourth reactance element (Cs2, Ls2) connected between the output terminal of the second amplifier and the external connection terminal, and the output circuit includes the external connection terminal. Including a fifth reactance element (Cp, Lp) connected to (see FIGS. 6, 8, 14, and 16).

  In a more preferred embodiment, the first reactance element (Lo1) of the first matching circuit and the second reactance element (Lo2) of the second matching circuit are inductors, and the first matching circuit includes: The third reactance element (Cs1) and the fourth reactance element (Cs2) of the second matching circuit are capacitors, and the fifth reactance element of the output circuit is a capacitor or an inductor (Cp, Lp) (FIG. 6, see FIG.

  In another more preferred embodiment, the first reactance element (Lo1) of the first matching circuit and the second reactance element (Lo2) of the second matching circuit are inductors, and the first matching circuit The third reactance element (Ls1) and the fourth reactance element (Ls2) of the second matching circuit are other inductors (see FIGS. 14 and 16).

  In a specific embodiment, the first amplifier (1077) and the second amplifier (1078) have the first input signal (Vin1) having the first frequency which is an RF frequency and the second frequency. The driver amplifier amplifies the two input signals (Vin2).

  In a more specific embodiment, the first amplifier and the second amplifier, which are the driver amplifiers, drive an RF power amplifier (123) of an RF transmitter.

  [2] A semiconductor integrated circuit according to a representative embodiment of another aspect of the present invention includes an external connection terminal (IN, / IN), a first amplifier (2077), a second amplifier (2078), A first matching circuit (2091) and a second matching circuit (2092) are provided.

  The first amplifier 2077 can amplify a first input signal Vin1 having a first frequency to form a first output signal, and the second amplifier 2078 can generate a first output signal. It is possible to amplify a second input signal (Vin2) having a higher second frequency to form a second output signal.

  The first matching circuit (2091) can supply the first input signal (Vin1) having the first frequency supplied from the external connection terminal to an input terminal of the first amplifier (2077). . The second matching circuit (2092) can supply the second input signal (Vin2) having the second frequency supplied from the external connection terminal to the input terminal of the second amplifier (2078). .

  An external circuit (224) capable of supplying the first input signal and the second input signal can be connected to the external connection terminals (IN, / IN) outside the semiconductor integrated circuit.

  The first matching circuit (2091) includes at least first reactance elements (Ls1, Lo1) (see FIGS. 17, 19, 21, 22, 24, 25, and 27). Accordingly, the input impedance (Zin) of the first matching circuit to which the first input signal of the first frequency is supplied is the external impedance that supplies the first output signal of the first frequency to the external connection terminal. Matching with the output impedance (Zout) of the circuit (124) is possible (see FIGS. 20A, 23A, and 26A).

  The second matching circuit (1092) includes at least a second reactance element (Ls2, Lo2) (see FIGS. 17, 19, 21, 5, 24, 25, and 27). The input impedance (Zin) of the second matching circuit to which the second input signal of the second frequency is supplied is the external circuit (124) that supplies the second output signal of the second frequency to the external connection terminal. Can be matched with the output impedance (Zout) (see FIGS. 20A, 23A, and 26A).

  When the first amplifier is activated, the first amplifier amplifies the first input signal of the first frequency supplied from the external circuit via the external connection terminal and the first matching circuit. In some cases, the second amplifier is deactivated.

  When the second amplifier is activated, the second amplifier amplifies the second input signal of the second frequency supplied from the external circuit via the external connection terminal and the second matching circuit. In this case, the first amplifier is deactivated (see FIGS. 17, 19, 21, 22, 24, 25, and 27).

  According to the embodiment, since the first reactance element of the first matching circuit and the second reactance element of the second matching circuit can be easily integrated, integration is easy. In addition, a semiconductor integrated circuit including an impedance matching circuit adapted to a plurality of frequency bands can be provided.

  According to the embodiment, the impedance matching at the first frequency and the impedance matching at the second frequency are switched by switching between activation and deactivation of the first amplifier and the second amplifier. Is done. Therefore, it is possible to reduce the thermal noise during RF reception and enable low noise reception.

  In a preferred embodiment, the first reactance element (Ls1) of the first matching circuit (2091) is connected between the external connection terminal and the input terminal of the first amplifier, and the second matching circuit. The second reactance element (Ls2) of (2092) is connected between the external connection terminal and the input terminal of the second amplifier. The first matching circuit and the second matching circuit share an input circuit (2090) connected to the external connection terminals (IN, / IN). The input circuit includes at least a third reactance element (Cin, Lin) connected to the external connection terminal (see FIGS. 17, 19, 21, 22, 24, 25, and 27).

  In a more preferred embodiment, the first reactance element of the first matching circuit and the second reactance element of the second matching circuit are inductors, and the third reactance element of the input circuit is a capacitor or an inductor. (Cin, Lin) (see FIGS. 17, 19, 21, 22, 24, 25, and 27).

  In another more preferred embodiment, the reactance of at least one element with the third reactance element of the input circuit is controllable by a control signal (Cin_Cnt, Lin_Cnt) (FIGS. 17, 19, 21, 21). (See FIGS. 22, 24, 25, and 27).

  In another preferred embodiment, the first reactance element (Lo1) of the first matching circuit (2091) is connected to the input terminal of the first amplifier, and the second matching circuit (2092) includes the first reactance element (Lo1). A two reactance element (Lo2) is connected to the input terminal of the second amplifier. The first matching circuit (2091) includes a third reactance element (Ls1, Cs1) connected between the input terminal of the first amplifier and the external connection terminal. The second matching circuit (2092) includes a fourth reactance element (Ls2, Cs2) connected between the input terminal of the second amplifier and the external connection terminal, and the external connection terminal of the input circuit. Including a fifth reactance element (Cin, Lin) connected to (see FIGS. 17, 19, 21, 22, 24, 25, and 27).

  In a more preferred embodiment, the first reactance element (Lo1) of the first matching circuit and the second reactance element (Lo2) of the second matching circuit are inductors, and the first matching circuit includes: The third reactance element (Ls1) and the fourth reactance element (Ls2) of the second matching circuit are other inductors (see FIGS. 22 and 24).

  In another more preferred embodiment, the first reactance element (Lo1) of the first matching circuit and the second reactance element (Lo2) of the second matching circuit are inductors, and the first matching circuit The third reactance element (Cs1) of the second matching circuit and the fourth reactance element (Cs2) of the second matching circuit are capacitors, and the fifth reactance element of the input circuit is a capacitor or an inductor (Cin, Lin). (See FIGS. 25 and 27).

  In a specific embodiment, the first amplifier (2077) and the second amplifier (2078) have the first input signal (Vin1) having the first frequency which is an RF frequency and the second frequency. It is a low noise amplifier for amplifying the two input signals (Vin2).

  In a more specific embodiment, the first amplifier and the second amplifier, which are the low noise amplifiers, are the first input signal (Vin1) received by the antenna (14) of the RF receiver and the second amplifier. Each of them amplifies the input signal (Vin2).

  [3] A semiconductor integrated circuit according to a representative embodiment of still another aspect of the present invention includes an external input connection terminal (IN, / IN), a first input amplifier (2077), and a second input amplifier (2078). ), A first input matching circuit (2091), and a second input matching circuit (2092) (see FIG. 17).

  The semiconductor integrated circuit includes external output connection terminals (OUT, / OUT), a first output amplifier (1077), a second output amplifier (1078), a first output matching circuit (1091), and a second output matching. And a circuit (1092) (see FIG. 2).

  The first input amplifier (2077) may amplify a first received input signal (Vin1) having a first input frequency to form a first received output signal, and the second input amplifier (2078) may A second received input signal (Vin2) having a second input frequency higher than the first input frequency can be amplified to form a second received output signal (see FIG. 17).

  The first input matching circuit (2091) supplies the first reception input signal (Vin1) having the first input frequency supplied from the external input connection terminal to the input terminal of the first input amplifier (2077). It is possible. The second input matching circuit (2092) supplies the second reception input signal (Vin2) having the second input frequency supplied from the external input connection terminal to the input terminal of the second input amplifier (2078). (See FIG. 17).

  An external input circuit (224) capable of supplying the first reception input signal and the second reception input signal can be connected to the external input connection terminals (IN, / IN) outside the semiconductor integrated circuit. .

  The first input matching circuit (2091) includes at least first input reactance elements (Ls1, Lo1) (see FIGS. 17, 19, 21, 22, 24, 25, and 27). Accordingly, the input impedance (Zin) of the first input matching circuit to which the first reception input signal of the first input frequency is supplied is the external input connection of the first reception output signal of the first input frequency. Matching with the output impedance (Zout) of the external input circuit (124) supplied to the terminal is possible (see FIGS. 20A, 23A, and 26A).

  The second input matching circuit (2092) includes at least second input reactance elements (Ls2, Lo2) (see FIGS. 17, 19, 21, 22, 24, 25, and 27). Accordingly, the input impedance (Zin) of the second input matching circuit to which the second reception input signal of the second input frequency is supplied is the external input connection of the second reception output signal of the second input frequency. Matching with the output impedance (Zout) of the external input circuit (124) supplied to the terminal is possible (see FIGS. 20B, 23B, and 26B).

  When the first input amplifier is activated, the first reception input signal of the first frequency supplied from the external input circuit via the first input matching circuit and the external input connection terminal is supplied to the first input amplifier. When the one-input amplifier amplifies, the second input amplifier is deactivated.

  When the second input amplifier is activated, the second reception input signal of the second frequency supplied from the external input circuit via the second input matching circuit and the external input connection terminal is supplied to the second input amplifier. When the two-input amplifier amplifies, the first input amplifier is deactivated (see FIGS. 17, 19, 21, 22, 24, 25, and 27).

  The first output amplifier (1077) may amplify a first transmission input signal (Vin1) having a first output frequency to form a first transmission output signal, and the second amplifier (1078) may A second transmission input signal (Vin2) having a second output frequency higher than the first output frequency can be amplified to form a second transmission output signal.

  The first output matching circuit (1091) can supply the first transmission output signal supplied from the first output amplifier to the external output connection terminal, and the second output matching circuit (1092) The second transmission output signal supplied from the second output amplifier can be supplied to the external output connection terminal.

  An external output circuit (124) capable of supplying the first transmission output signal and the second transmission output signal can be connected to the external output connection terminal outside the semiconductor integrated circuit (see FIG. 2).

  The first output matching circuit (1091) includes at least first output reactance elements (Ls1, Lo1) (see FIGS. 2 and 5). Accordingly, the output impedance (Zout) of the first output matching circuit that supplies the first transmission output signal of the first output frequency to the external output connection terminal is the first transmission output signal of the first output frequency. Can be matched with the input impedance (Zin) of the external output circuit (124) supplied (see FIGS. 4A and 7A).

  The second output matching circuit (1092) includes at least second output reactance elements (Ls2, Lo2) (see FIGS. 2 and 5). As a result, the output impedance (Zout) of the second output matching circuit that supplies the second transmission output signal of the second output frequency to the external output connection terminal is the second transmission output signal of the second output frequency. Can be matched with the input impedance (Zin) of the external output circuit (124) supplied (see FIGS. 4B and 7B).

  When the first output amplifier is activated, the first output amplifier transmits the first transmission output signal having the first output frequency to the external output via the first output matching circuit and the external output connection terminal. When supplying the circuit, the second output amplifier is deactivated.

  When the second output amplifier is activated, the second output amplifier transmits the second transmission output signal of the second output frequency to the external output via the second output matching circuit and the external output connection terminal. When the circuit is supplied, the first output amplifier is deactivated (see FIGS. 2 and 5).

  In a preferred embodiment, the first input reactance element (Ls1, Lo1) of the first input matching circuit (2091) is connected between the external input connection terminal and the input terminal of the first input amplifier. The second input reactance elements (Ls2, Lo2) of the second input matching circuit (2092) are connected between the external input connection terminal and the input terminal of the second input amplifier. The first input matching circuit and the second input matching circuit share an input circuit (2090) connected to the external input connection terminals (IN, / IN). The input circuit includes at least a third input reactance element (Cin, Lin) connected to the external input connection terminal (see FIGS. 17, 19, 21, 22, 24, 25, and 27). .

  The first output reactance element (Ls1) of the first output matching circuit (1091) is connected between the output terminal of the first output amplifier and the external output connection terminal, and the second output matching circuit (1092). The second output reactance element (Ls2) is connected between the output terminal of the second output amplifier and the external output unit connection terminal. The first output matching circuit and the second output matching circuit share an output circuit (1090) connected to the external output connection terminals (OUT, / OUT). The output circuit includes at least a third output reactance element (Cp, Lp) connected to the external output connection terminal (see FIGS. 2, 5, 6, 8, and 12).

  In another preferred embodiment, the first input reactance element (Lo1) of the first input matching circuit (2091) is connected to the input terminal of the first input amplifier, and the second input matching circuit (2092). ) Of the second input reactance element (Lo2) is connected to the input terminal of the second input amplifier. The first input matching circuit (2091) includes third input reactance elements (Ls1, Cs1) connected between the input terminal of the first input amplifier and the external input connection terminal. The second input matching circuit (2092) includes fourth input reactance elements (Ls2, Cs2) connected between the input terminal of the second input amplifier and the external input connection terminal (FIG. 22, FIG. 24, FIG. 25, FIG. 27).

  The first output reactance element (Lo1) of the first output matching circuit (1091) is connected to the output terminal of the first output amplifier, and the second output reactance element (Lo2) of the second output matching circuit (1092). ) Is connected to the output terminal of the second output amplifier. The first output matching circuit (1091) includes third output reactance elements (Cs1, Ls1) connected between the output terminal of the first output amplifier and the external output connection terminal. The second output matching circuit (1092) includes fourth output reactance elements (Cs2, Ls2) connected between the output terminal of the second output amplifier and the external output connection terminal (FIG. 6, FIG. 6). 8, FIG. 14, FIG. 16).

<< Description of Embodiment >>
Next, the embodiment will be described in more detail. In all the drawings for explaining the best mode for carrying out the invention, components having the same functions as those in the above-mentioned drawings are denoted by the same reference numerals, and repeated description thereof is omitted.

<< RFIC with multiple driver amplifiers >>
FIG. 2 is a diagram showing a configuration of an RFIC (10) according to an embodiment of the present invention in which a plurality of driver amplifiers that drive a single RF power amplifier that outputs RF transmission signals of a plurality of frequency bands are integrated. .

  The RFIC (10) shown in FIG. 2 includes a first driver amplifier 1077, a second driver amplifier 1078, and an output matching circuit Zxy including a first output matching circuit 1091 and a second output matching circuit 1092. Further, the first output matching circuit 1091 and the second output matching circuit 1092 of the output matching circuit Zxy share the output circuit 1090.

  The single RF power amplifier 123 connected to the RFIC (10) shown in FIG. 2 includes a first RF transmission signal Vin1 having a first frequency f1 in a low band (LB) and a second RF having a second frequency f2 in a high band (HB). The transmission signal Vin2 is output to the antenna 14 of the mobile phone terminal. The RF signal output terminal of the input matching circuit 124 is connected to the RF signal input terminal of the single RF power amplifier 123. The input impedance Zin of the input matching circuit 124 when the single RF power amplifier 123 outputs the first RF transmission signal of the first frequency f1 and the output of the second RF transmission signal of the second frequency f2 by the single RF power amplifier 123 The input impedance Zin of the input matching circuit 124 is different.

  When the single RF power amplifier 123 outputs the first RF transmission signal Vin1 having the first frequency f1, the first driver in which the first RF transmission signal Vin1 having the first frequency f1 in the low band (LB) is supplied to the RF signal input terminal. The amplifier 1077 is activated by the high-level first control signal DA1_Cnt. At this time, the second driver amplifier 1078 to which the second RF transmission signal Vin2 of the second frequency f2 in the high band (HB) is supplied to the RF signal input terminal is deactivated by the low-level second control signal DA2_Cnt.

  When the single RF power amplifier 123 outputs the second RF transmission signal Vin2 having the second frequency f2, the second RF transmission signal Vin2 having the second frequency f2 in the high band (HB) is supplied to the RF signal input terminal. The driver amplifier 1078 is activated by the high-level second control signal DA2_Cnt. At this time, the first driver amplifier 1077 to which the first RF transmission signal Vin1 having the first frequency f1 in the low band (LB) is supplied to the RF signal input terminal is deactivated by the low-level first control signal DA1_Cnt.

  Between the RF signal output terminal of the first driver amplifier 1077 and the RF signal input terminal of the input matching circuit 124 to which the first RF transmission signal Vin1 of the first frequency f1 in the low band (LB) is supplied to the RF signal input terminal, A first output matching circuit 1091 is connected. Between the RF signal output terminal of the second driver amplifier 1078 and the RF signal input terminal of the input matching circuit 124 to which the second RF transmission signal Vin2 of the second frequency f2 of the high band (HB) is supplied to the RF signal input terminal. The second output matching circuit 1092 is connected.

  The first output matching circuit 1091 includes two first inductors Ls1, and the second output matching circuit 1092 also includes two second inductors Ls2. Further, the RF complementary signal input terminal of the first output matching circuit 1091 is connected to the RF complementary signal output terminal of the first driver amplifier 1077, and the RF complementary signal input terminal of the second output matching circuit 1092 is the RF of the second driver amplifier 1078. It is connected to the complementary signal output terminal. The RF complementary signal output terminal of the first output matching circuit 1091 and the RF complementary signal output terminal of the second output matching circuit 1092 are connected to the RF complementary signal input terminal of the input matching circuit 124 via the shared output circuit 1090. Commonly connected.

  That is, in the first output matching circuit 1091, one end of one first inductor Ls 1 and one end of the other first inductor Ls 1 function as an RF complementary signal input terminal of the first output matching circuit 1091, while the first driver amplifier The non-inverting output terminal 1077 and the inverting output terminal 1077 are respectively connected. In the first output matching circuit 1091, the other end of one first inductor Ls1 and the other end of the other first inductor Ls1 function as RF complementary signal output terminals OUT and / OUT of the first output matching circuit 1091, The input matching circuit 124 is connected to the RF complementary signal input terminal. In the second output matching circuit 1092, one end of one second inductor Ls 2 and one end of the other second inductor Ls 2 function as an RF complementary signal input terminal of the second output matching circuit 1092, while the second driver amplifier 1078 The non-inverting output terminal and the inverting output terminal are respectively connected. In the second output matching circuit 1092, the other end of one second inductor Ls 2 and the other end of the other second inductor Ls 2 function as RF complementary signal output terminals OUT and / OUT of the second output matching circuit 1092, The input matching circuit 124 is connected to the RF complementary signal input terminal.

  In FIG. 2, Zout is the output impedance of the first output matching circuit 1091 and the second output matching circuit 1092, Zda1 (out) is the output impedance of the first driver amplifier 1077, and Zda2 (out) is the second driver. This is the output impedance of the amplifier 1078. The capacitance of the capacitor Cp of the output circuit 1090 can be controlled by a control signal Cp_Cnt.

  FIG. 3 shows the RFIC (10) shown in FIG. 2, in which the first driver amplifier 1077 for amplifying the first RF transmission signal having the first frequency f1 in the low band (LB) is activated and the second frequency in the high band (HB). It is a figure which shows the structure of an equivalent circuit in case the 2nd driver amplifier 1078 which amplifies the 2nd RF transmission signal of f2 is deactivated. In this case, the single RF power amplifier 123 outputs the first RF transmission signal having the first frequency f1 in the low band (LB).

  In this case, the output impedance Zda2 (out) of the second driver amplifier 1078 controlled to be inactive is also a load for the output signal of the first driver amplifier 1077. The output impedance Zda2 (out) of the second driver amplifier 1078 controlled to be inactive is composed of an output capacitor Co2.

  4 shows an input impedance Zin of the input matching circuit 124 and the first or second output matching circuit when the first or second RF transmission signal is output by the single RF power amplifier 123 in the RFIC shown in FIG. It is a figure which shows the Smith chart which analyzed the state of matching (matching) with the output impedance Zout of 1091 and 1092.

  That is, FIG. 4A shows the input impedance Zin of the input matching circuit 124 and the first output matching circuit 1091 when the first RF transmission signal of the first frequency f1 in the low band (LB) is output by the single RF power amplifier 123. It is a figure which shows the Smith chart which analyzed the state of matching (matching) with the output impedance Zout. 4B shows the input impedance Zin of the input matching circuit 124 and the second output matching circuit when the second RF transmission signal of the second frequency f2 in the high band (HB) is output by the single RF power amplifier 123. It is a figure which shows the Smith chart which analyzed the state (matching) with the output impedance Zout of 1092. FIG. 4A and 4B are normalized by dividing the load impedance of the 50 ohm antenna 14.

  The starting point of the Smith chart of FIG. 4A is a relatively large output impedance Zda1 (out) of the first driver amplifier 1077. For example, the normalized value of the output impedance Zda1 (out) is approximately 0.2. -J · 0.5. Next, one end of two first inductors Ls1 having a relatively large inductance of the first output matching circuit 1091 is connected to the non-inverting output terminal and the inverting output terminal of the first driver amplifier 1077. Accordingly, the impedance moves relatively large along a clockwise trajectory on the 0.2 constant resistance circle from the start point Zda1 (out). As a result, the normalized value of the first destination point Z1 is, for example, 0.2 + j · 0.4.

  Next, the two second inductors Ls2 of the second output matching circuit 1092 and the non-inverting output terminal of the second driver amplifier 1078 are connected to the other ends of the two first inductors Ls1 of the first output matching circuit 1091. The output terminal is connected. The output impedance Zda2 (out) of the second driver amplifier 1078 controlled to be inactive is composed of an output capacitance Co2 and an output resistance. That is, the resistance value of the output resistance of the second driver amplifier 1078 controlled to be inactive is extremely large. Therefore, the impedance Zc when the second output matching circuit 1092 and the second driver amplifier 1078 are viewed from the other ends of the two first inductors Ls1 of the first output matching circuit 1091 is Zc = j (2ωLs2-1 / (ωCo2 )).

  Accordingly, the impedance Zc causes the impedance to move to the second destination point Z2 having a normalized value of 0.2 + j · 0.5, for example, in a clockwise trajectory from the first destination point Z1.

  In addition, since the capacitor Cp having a relatively large capacitance of the output circuit 1090 is finally connected to the other ends of the two first inductors Ls1 of the first output matching circuit 1091, the right side from the second destination point Z2 is connected. For example, the impedance moves to the final destination point of about 1.0 + j · 0.4 normalized by the trajectory around.

  The output impedance Zout of the first output matching circuit 1091 at the final destination point of approximately 1.0 + j · 0.4 and the relatively small input impedance Zin of the input matching circuit 124 of approximately 1.0−j · 0.4. The amount of movement of the impedance described above is set so as to have a complex conjugate relationship. That is, the amount of movement of the impedance from the output impedance Zda1 (out) of the first driver amplifier 1077 at the start point of the Smith chart of FIG. 4A to the first destination point Z1 is first determined by the first control signal DA1_Cnt. By turning on the driver amplifier 1077, the driver amplifier 1077 can be set by the magnitude of the inductance of the first inductor Ls1 of the first output matching circuit 1091 connected thereto. The amount of movement of the impedance from the first destination point Z1 to the second destination point Z2 is determined by turning off the second driver amplifier 1078 by the second control signal DA2_Cnt and the second inductor Ls2 connected thereto. It can be set by the output impedance of the driver amplifier 1078. The amount of impedance movement from the second destination point Z2 to the relatively small output impedance Zout of the final destination point is set by the capacitance of the capacitor Cp of the output circuit 1090 that can be controlled by the control signal Cp_Cnt. be able to.

  In this way, when the low-band (LB) first RF transmission signal is output by the single RF power amplifier 123, a relatively small input impedance Zin of the input matching circuit 124 is obtained as shown in the Smith chart of FIG. And a relatively small output impedance Zout of the first output matching circuit 1091 can be obtained.

  The starting point of the Smith chart of FIG. 4B is the relatively small output impedance Zda2 (out) of the second driver amplifier 1078. For example, the normalized value of the output impedance Zda2 (out) is about 0.2. -J · 0.3. Next, one end of two first inductors Ls2 having a relatively small inductance of the second output matching circuit 1092 is connected to the non-inverting output terminal and the inverting output terminal of the second driver amplifier 1078. However, since the frequency is high, the impedance moves relatively large along a clockwise locus on the 0.2 constant resistance circle from the start point Zda2 (out). As a result, the normalized value of the first destination point Z1 is, for example, 0.2 + j · 0.5.

  Next, at the other end of the two second inductors Ls2 of the second output matching circuit 1092, the two first inductors Ls1 of the first output matching circuit 1091 and the non-inverting output terminal of the first driver amplifier 1077 are inverted. The output terminal is connected. The output impedance Zda1 (out) of the first driver amplifier 1077 controlled to be inactive is composed of an output capacitor Co1 and an output resistor. Further, the resistance value of the output resistance of the first driver amplifier 1077 controlled to be inactive is extremely large. Therefore, the impedance Zc when the first output matching circuit 1091 and the first driver amplifier 1077 are viewed from the other ends of the two second inductors Ls2 of the second output matching circuit 1092 is Zc = j (2ωLs1-1 / (ωCo1 )).

  Accordingly, the impedance moves to the second destination point Z2 having a normalized value of 0.2 + j · 0.6, for example, in a clockwise trajectory from the first destination point Z1 due to the impedance Zc.

  In addition, the other end of the two second inductors Ls2 of the second output matching circuit 1092 is connected to the capacitance Cp having a relatively small capacitance of the output circuit 1090 at the end. For example, the impedance moves to the final destination point of about 1.0 + j · 0.8 normalized by the trajectory around.

  The output impedance Zout of the first output matching circuit 1091 at the final destination point of about 1.0 + j · 0.8 and the relatively large input impedance Zin of the input matching circuit 124 of about 1.0−j · 0.8. The amount of movement of the impedance described above is set so as to have a complex conjugate relationship. That is, the amount of impedance movement from the output impedance Zda2 (out) of the second driver amplifier 1078 at the start point of the Smith chart of FIG. 4B to the first destination point Z1 is determined by the second control signal DA2_Cnt. By turning on the driver amplifier 1078, it can be set by the magnitude of the inductance of the second inductor Ls2 of the second output matching circuit 1092 connected thereto. The amount of movement of the impedance from the first destination point Z1 to the second destination point Z2 is determined by turning off the first driver amplifier 1077 by the first control signal DA1_Cnt and the first inductor Ls1 connected to the first inductor Ls1. It can be set by the output impedance of the driver amplifier 1077. The amount of impedance movement from the second destination point Z2 to the relatively small output impedance Zout of the final destination point is set by the capacitance of the capacitor Cp of the output circuit 1090 that can be controlled by the control signal Cp_Cnt. be able to.

  In this way, when a high-band (HB) second RF transmission signal is output by the single RF power amplifier 123, a relatively large input impedance of the input matching circuit 124 is obtained as shown in the Smith chart of FIG. Good matching (matching) can be obtained between Zin and the relatively large output impedance Zout of the second matching circuit 1092.

  If the output impedance Zc causes the amount of movement from the first destination point Z1 to the second destination point Z2 to be too large, impedance conversion using the capacitance Cp of the output circuit 1090 cannot provide good output matching (matching). There is. In this case, it is effective to replace the reactance element of the output circuit 1090 with the inductor Lp from the capacitor Cp as shown in FIG. That is, the amount of movement from the first destination point Z1 to the second destination point Z2 is too large because the output capacitances Co1 and Co2 of the driver amplifiers 1077 and 1078 are too large.

  FIG. 5 shows another embodiment of the present invention in which a plurality of driver amplifiers for driving a single RF power amplifier that outputs RF transmission signals of a plurality of frequency bands by an impedance conversion technique using the inductor Lp of the output circuit 1090 are integrated. It is a figure which shows the structure of RFIC (10) by the form of. The inductor Lp of the output circuit 1090 of FIG. 5 compensates for the impedance shift due to the output capacitors Co1 and Co2 of the driver amplifiers 1077 and 1078 that are too large. That is, when the output capacitances Co1 and Co2 are too large, the final destination point passes through the output impedance Zout when it moves clockwise on the constant conductance circle in the Smith chart of FIG. 4 (A) or (B). Thus, it moves to the vicinity of the input impedance Zin. The inductor Lp of the output circuit 1090 in FIG. 5 can move counterclockwise on the constant conductance circle from the impedance moved to the vicinity of the input impedance Zin and move the final destination point to the output impedance Zout. In this way, good output matching (matching) can be obtained by the technique of impedance conversion by the inductor Lp of the output circuit 1090 of FIG.

  FIG. 6 is a diagram showing a configuration of an RFIC (10) according to another embodiment of the present invention in which a plurality of driver amplifiers that drive a single RF power amplifier that outputs RF transmission signals of a plurality of frequency bands are integrated. It is.

  FIG. 6 shows RFIC first driver amplifier 1077, second driver amplifier 1078, first inductor circuit 1100, second inductor circuit 1101, first output matching circuit 1091, second output matching circuit 1092, and external input matching circuit 124. FIG. 3 is a diagram showing how a single RF power amplifier 123 is driven as shown in FIG.

  In the circuit shown in FIG. 6, the first output matching circuit 1091 and the second output matching circuit 1092 of the output matching circuit Zxy share the output circuit 1090, as in FIG. Similar to FIG. 2, the capacitance of the capacitor Cp of the output circuit 1090 of the circuit shown in FIG. 6 can be controlled by the control signal Cp_Cnt.

  However, in the circuit shown in FIG. 6, the first output matching circuit 1091 includes two first capacitors Cs1, and the second output matching circuit 1092 also includes two first capacitors Cs2. In the circuit shown in FIG. 6, a first inductor circuit 1100 including an inductor Lo1 is connected between the output of the first driver amplifier 1077 and the input of the first output matching circuit 1091. A second inductor circuit 1101 including an inductor Lo2 is connected between the output of the second driver amplifier 1078 and the input of the second output matching circuit 1092. In the circuit shown in FIG. 6, the inductor Lo1 of the first inductor circuit 1100 can be controlled by the control signal Lo1_Cnt, and the inductor Lo2 of the second inductor circuit 1101 can be controlled by the control signal Lo2_Cnt.

  FIG. 7 shows the input impedance Zin of the input matching circuit 124 and the first or second output matching circuit 1091 when the first or second RF transmission signal is output by the single RF power amplifier in the RFIC shown in FIG. , 1092 is a Smith chart obtained by analyzing the matching state with the output impedance Zout.

  That is, FIG. 7A shows the input impedance Zin of the input matching circuit 124 and the first output matching circuit 1091 when the first RF transmission signal of the first frequency f1 in the low band (LB) is output by the single RF power amplifier 123. It is a figure which shows the Smith chart which analyzed the state of matching (matching) with the output impedance Zout. FIG. 7B shows the input impedance Zin of the input matching circuit 124 and the second output matching circuit when the second RF transmission signal of the second frequency f2 in the high band (HB) is output by the single RF power amplifier 123. It is a figure which shows the Smith chart which analyzed the state (matching) with the output impedance Zout of 1092. FIG. The Smith charts of FIGS. 7A and 7B are normalized by dividing the load impedance of the 50 ohm antenna 14.

  The starting point of the Smith chart of FIG. 7A is the relatively large output impedance Zda1 (out) because the first driver amplifier 1077 is turned on by the first control signal DA1_Cnt. For example, the normalized value of the output impedance Zda1 (out) is approximately 0.2−j · 0.5. Next, a relatively large inductor Lo1 of the first inductor circuit 1100 is connected between the non-inverting output terminal and the inverting output terminal of the first driver amplifier 1077. Accordingly, the impedance moves relatively large on the constant conductance circle from the start point Zda1 (out) along the counterclockwise locus, and as a result, the impedance moves to the first destination point Z1.

  Next, two first capacitors Cs1 of the first output matching circuit 1091 are connected to both ends of the inductor Lo1 of the first inductor circuit 1100. Therefore, the impedance moves from the first destination point Z1 to the destination point Z2 along the counterclockwise locus on the constant resistance circle by the two capacitors Cs1.

  Next, the second impedance is determined by the impedance Zc determined by the output impedance of the second driver amplifier 1078 turned off by the second control signal DA2_Cnt and the impedance of the second inductor circuit 1101 and the second capacitor Cs2 of the second output matching circuit. The impedance moves from the destination point Z2 to the third destination point Z3 along a clockwise trajectory.

  Next, the amount of impedance movement from the third destination point Z3 to the relatively small output impedance Zout of the final destination point is the capacitance of the capacitance Cp of the output circuit 1090 that can be controlled by the control signal Cp_Cnt. Can be set.

  The amount of movement of the impedance described above is set so that the output impedance Zout of the first output matching circuit 1091 which is the final destination point Zout and the relatively small input impedance Zin of the input matching circuit 124 have a complex conjugate relationship. .

  In this way, when the low-band (LB) first RF transmission signal is output by the single RF power amplifier 123, a relatively small input impedance Zin of the input matching circuit 124 is obtained as shown in the Smith chart of FIG. And a relatively small output impedance Zout of the first output matching circuit 1091 can be obtained.

  The start point of the Smith chart of FIG. 7B is the relatively small output impedance Zda2 (out) because the second driver amplifier 1078 is turned on by the second control signal DA2_Cnt. Next, a relatively large inductor Lo2 of the second inductor circuit 1101 is connected between the non-inverting output terminal and the inverting output terminal of the second driver amplifier 1078. Accordingly, the impedance moves relatively large along the counterclockwise locus on the constant conductance circle from the start point Zda2 (out). As a result, the impedance moves to the first destination point Z1.

  Next, two second capacitors Cs2 of the second output matching circuit 1092 are connected to both ends of the inductor Lo2 of the second inductor circuit 1101. Therefore, the impedance moves from the first destination point Z1 to the destination point Z2 along the counterclockwise locus on the constant resistance circle by the two capacitors Cs2.

  Next, the second impedance Zc determined by the output impedance of the first driver amplifier 1077 turned off by the first control signal DA1_Cnt and the impedance of the first inductor circuit 1100 and the first capacitor Cs1 of the first output matching circuit is second. The impedance moves from the destination point Z2 to the third destination point Z3 along a clockwise trajectory.

  Next, the amount of impedance movement from the third destination point Z3 to the relatively small output impedance Zout of the final destination point is the capacitance of the capacitance Cp of the output circuit 1090 that can be controlled by the control signal Cp_Cnt. Can be set.

  The amount of movement of the impedance described above is set so that the output impedance Zout of the second output matching circuit 1092 that is the final destination point Zout and the relatively large input impedance Zin of the input matching circuit 124 have a complex conjugate relationship. .

  In this way, when a high-band (HB) second RF transmission signal is output by the single RF power amplifier 123, a relatively large input impedance of the input matching circuit 124 is obtained as shown in the Smith chart of FIG. Good matching (matching) can be obtained between Zin and the relatively large output impedance Zout of the second output matching circuit 1092.

  In FIG. 6, since the amount of movement from the second destination point Z2 to the third destination point Z3 is too large due to the output impedance Zc, good output matching (matching) is obtained by impedance conversion using the capacitance Cp of the output circuit 1090. It may not be possible. In this case, it is effective to replace the reactance element of the output circuit 1090 from the capacitance Cp to the inductor Lp as shown in FIG. 8 as in FIG.

  8 integrates a plurality of driver amplifiers that drive a single RF power amplifier that outputs RF transmission signals of a plurality of frequency bands by means of impedance conversion using an inductor Lp instead of the capacitor Cp of the output circuit 1090 of FIG. It is a figure which shows the structure of RFIC (10) by other Embodiment of this invention which was made into.

≪Output circuit, input circuit capacitance, inductor≫
FIG. 9 is a diagram showing the configuration of a capacitor or inductor used in the output circuit (1090) or input circuit (2090) of the RFIC (10) according to various embodiments of the present invention.

  FIG. 9A shows an example of a specific configuration of the capacitor Cp used in the output circuit (1090) of the RFIC (10), and unit capacitors C11, C21, C12, connected in parallel between complementary signal lines. C22... C1n, C2n and a plurality of switch transistors Qc1, Qc2,. A plurality of switch transistors Qc1, Qc2,... Qcn are selectively controlled to be conductive by multi-bit control signals Vc1, Vc2,... Vcn as the control signal Cp_Cnt, and the capacitance of the capacitor Cp can be controlled by the control signal Cp_Cnt. .

FIG. 9B shows an example of a specific configuration of the inductor Lp used in the output circuit (1090) of the RFIC (10), and unit inductors L11, L21, L12 connected in parallel between the complementary signal lines. L22... L1m, L2m and a plurality of switch transistors Q _L 1, Q _L 2... Q _L m are included. Control signal V _L 1 of the multi-bit as the control signal Lp_Cnt, V _L 2 ... more switch transistors by _{V L n Q L 1, Q} L 2 ... Q L m is controlled to be selectively turned, the inductor Lp The inductance can be controlled by the control signal Lp_Cnt.

  FIG. 10 is a diagram illustrating another configuration of capacitors used in the output circuit (1090) or the input circuit (2090) of the RFIC (10) according to various embodiments of the present invention.

  10 includes unit variable capacitance diodes C11, C21, C12, C22... C1n, C2n connected in parallel between complementary signal lines of the output circuit (1090) of the RFIC (10) of FIG. The capacitance of each unit variable capacitance diode is continuously controlled by the voltage levels of the plurality of control voltages Vc1, Vc2,... Vcn as the control signal Cp_Cnt, and the capacitance of the capacitance Cp can be controlled by the control signal Cp_Cnt.

≪Configuration of driver amplifier≫
FIG. 11 is a diagram showing the configuration of the first driver amplifier 1077 and the second driver amplifier 1078 of the RFIC shown in FIG.

  As shown in FIG. 11, the first driver amplifier 1077 includes a differential pair of transistors Tr11 and Tr12 whose bases are supplied with first RF transmission complementary input signals Vin1 and / Vin1 of a low-band (LB) first frequency f1, and a base. The current source transistor Tr10 is supplied with an activation control signal Cnt_Act1. A base bias voltage is supplied from the base bias terminal Bias to the bases of the differential pair transistors Tr11 and Tr12 via base resistors R11 and R12. From the collectors of the differential pair transistors Tr11 and Tr12, first RF transmission complementary driver output signals Vout1 and / Vout1 having a first frequency f1 in a low band (LB) are generated.

  As shown in FIG. 11, the second driver amplifier 1078 includes differential pair transistors Tr21 and Tr22 that are supplied with the second RF transmission complementary input signals Vin2 and / Vin2 of the second frequency f2 in the high band (HB). The current source transistor Tr20 is supplied with an activation control signal Cnt_Act2 at its base. A base bias voltage is supplied from a base bias terminal Bias to the bases of the differential pair transistors Tr21 and Tr22 via base resistors R21 and R22. From the collectors of the differential pair transistors Tr21 and Tr22, second RF transmission complementary driver output signals Vout2 and / Vout2 of the second frequency f2 in the high band (HB) are generated.

≪Dual band drive of single RF power amplifier≫
FIG. 12 shows an RFIC using a first driver amplifier 1077, a second driver amplifier 1078, a first output matching circuit 1091, a second output matching circuit 1092, an output circuit 1090, and an external input matching circuit 124 (MN). It is a figure which shows a mode that the single RF power amplifier 123 is driven like FIG.

  The input matching circuit 124 (MN) in FIG. 12 includes a balun by a transformer that converts a complementary signal from the RF complementary signal output terminals OUT and / OUT of the RFIC into an RF single-ended signal. One RF power amplifier 123 is supplied to the RF signal input terminal. In the circuit shown in FIG. 12, the first capacitor circuit 1095 is connected between the output of the first driver amplifier 1077 and the input of the first output matching circuit 1091, and the output of the second driver amplifier 1078 and the second output matching are connected. A second capacitor circuit 1096 is connected to the input of the circuit 1092.

  When the first RF transmission signal having the first frequency f1 in the low band (LB) is output from the single RF power amplifier 123, the high-level first activation control signal Cnt_Act1 is supplied from the control circuit Cnt_Ckt to the current of the first driver amplifier 1077. This is supplied to the base of the source transistor Tr10. When the second RF transmission signal having the second frequency f2 in the high band (HB) is output from the single RF power amplifier 123, the second activation control signal Cnt_Act2 at the high level is output from the control circuit Cnt_Ckt to the second driver amplifier. 1078 is supplied to the base of a current source transistor Tr20. The capacitance C3 of the first capacitance circuit 1095 is set to a capacitance of 2.4 pF, and the capacitance C4 of the second capacitance circuit 1096 is set to a capacitance of 0.1 pF.

  The inductances of the two inductors Ls1 of the first output matching circuit 1091 are each set to 8.3 nH, while the inductances of the two inductors Ls2 of the second output matching circuit 1092 are each set to 6.8 nH. .

  The output circuit 1090 of the first output matching circuit 1091 and the second output matching circuit 1092 includes a plurality of capacitors C11, C21, C12, C22 connected to the RF complementary signal output terminals OUT, / OUT and a plurality of MOS transistors Qc1, Qc2. Including.

  When the first RF transmission signal having the first frequency f1 in the low band (LB) is output from the single RF power amplifier 123, the third activation control signal Cnt_Qc1 at the high level is output from the control circuit Cnt_Ckt to one MOS of the output circuit 1090. It is supplied to the gate of the transistor Qc1. Further, when the second RF transmission signal of the second frequency f2 of the high band (HB) is output from the single RF power amplifier 123, the fourth activation control signal Cnt__Qc 2 of the high level is output from the control circuit Cnt_Ckt to the output circuit 1090. Is supplied to the gate of the other MOS transistor Qc2. One of the capacitors C11 and C21 of the output circuit 1090 is set to a capacitance of 18 pF, corresponding to the first RF transmission signal of the first frequency f1 in the low band (LB). In contrast, the other capacitors C12 and C22 of the output circuit 1090 are set to have a capacitance of 5 pF, corresponding to the second RF transmission signal of the second frequency f2 in the high band (HB).

  13 shows a case where the RFIC shown in FIG. 12 drives the single RF power amplifier 123 with the low-band 825 MHz low-band RF transmission signal and the high-band 1990 MHz through the input matching circuit 124 as shown in FIG. It is a figure which shows the characteristic of matching (matching). The frequency 825 MHz of the low-band RF transmission signal is set to a frequency slightly lower than the frequency of the band 6 WCDMA / RF transmission signal set to 830 to 840 MHz. The frequency 1990 MHz of the high-band RF transmission signal is set to a frequency slightly higher than the frequency of the band 1 WCDMA / RF transmission signal set to 1920 to 1980 MHz.

  FIG. 13A shows the matching characteristics at the time of driving with a low-band 825 MHz low-band RF transmission signal, and FIG. 13B shows the matching characteristics at the time of driving at a high-band 1990 MHz. Show. 13A and 13B, the horizontal axis represents the frequency of the RF transmission signal, and the vertical axis represents the voltage standing wave ratio VSWR in the input matching circuit 124.

As is well known, the voltage standing wave ratio VSWR is used to evaluate the impedance matching between two circuits facing each other. The voltage standing wave ratio VSWR is given by the following equation based on the reflectance Γ (= (Pr / Pf) ^1/2 ) obtained from the reflected wave power Pr and the traveling wave power Pf. Note that VSWR is an abbreviation for Voltage Standing Wave Ratio.

VSWR = (1+ | Γ |) / (1- | Γ |) (1)
The voltage standing wave ratio VSWR when the reflectance Γ is not 0.5 and an ideal matching condition is (1 + 0.5) / (1-0.5) = 3.0. On the other hand, the ideal voltage standing wave ratio VSWR (ideal) when the reflectance Γ is 0 and an ideal matching condition is (1 + 0) / (1-0) = 1.0. It is understood that Under this ideal matching condition, the impedances of the two circuits are set in a complex conjugate relationship, and the mutual reactances are canceled with each other.

  As shown in FIG. 13A, when driving a low-band 825 MHz low-band RF transmission signal, a voltage having a good value of 1.304, which is close to the ideal voltage standing wave ratio VSWR (ideal) of 1.0. A standing wave ratio VSWR is obtained. As shown in FIG. 13B, when driving a high-band 1990 MHz high-band RF transmission signal, the value is very good at 1.216, which is closer to the ideal voltage standing wave ratio VSWR (ideal) of 1.0. A voltage standing wave ratio VSWR having a proper value is obtained.

  The RFIC shown in FIG. 12 includes first and second driver amplifiers 1077 and 1078, first and second capacitor circuits 1095 and 1096, first and second output matching circuits 1091 and 1092, and an output circuit 1090. Yes. As shown in FIGS. 4A and 4B, the value of the input impedance Zin of the input matching circuit 124 outside the RFIC is different between the low-band RF transmission signal and the high-band RF transmission signal.

  In this way, the output impedance Zout of the first and second output matching circuits 1091 and 1092 is matched with respect to the input impedance Zin of the input matching circuit 124 having different values for the low-band and high-band RF transmission signals. Need to be obtained. Therefore, the first and second inductors Ls1 and Ls2 included in the first and second output matching circuits 1091 and 1092 of the RFIC shown in FIG. 12 are set to inductances having different values. Further, the output circuits 1090 of the first and second output matching circuits 1091 and 1092 of the RFIC shown in FIG. 12 are configured so that the capacitance value of the capacitance can be switched.

  FIG. 14 shows an RFIC first driver amplifier 1077, second driver amplifier 1078, first inductor circuit 1100, second inductor circuit 1101, first output matching circuit 1091, second output matching circuit 1092, and external input matching circuit 124. FIG. 3 is a diagram showing how a single RF power amplifier 123 is driven as shown in FIG.

  In the circuit shown in FIG. 14, a first inductor circuit 1100 including an inductor Lo1 is connected between the output of the first driver amplifier 1077 and the input of the first output matching circuit 1091. A second inductor circuit 1101 including an inductor Lo2 is connected between the output of the second driver amplifier 1078 and the input of the second output matching circuit 1092. In the circuit shown in FIG. 14, the first capacitor circuit 1095 and the second capacitor circuit 1096 shown in FIG. 12 are removed.

  FIG. 15 shows an input impedance Zin of the input matching circuit 124 and the first or second output matching circuit 1091 when the first or second RF transmission signal is output by the single RF power amplifier in the RFIC shown in FIG. , 1092 is a Smith chart obtained by analyzing the matching state with the output impedance Zout.

  That is, FIG. 15A shows the input impedance Zin of the input matching circuit 124 when the first RF transmission signal of the first frequency f1 in the low band (LB) is output by the single RF power amplifier 123 as shown in FIG. It is a figure which shows the Smith chart which analyzed the state (matching) with the output impedance Zout of the 1st output matching circuit 1091. FIG. 15B shows the input impedance Zin of the input matching circuit 124 when the second RF transmission signal of the second frequency f2 in the high band (HB) is output by the single RF power amplifier 123 as shown in FIG. 6 is a Smith chart that analyzes the state of matching (matching) with the output impedance Zout of the second output matching circuit 1092. FIG. The Smith charts of FIGS. 15A and 15B are normalized by dividing the load impedance of the 50 ohm antenna 14.

  The start point of the Smith chart of FIG. 15A is the relatively large output impedance Zda1 (out) because the first driver amplifier 1077 is turned on by the first control signal DA1_Cnt. Next, a relatively large inductor Lo1 of the first inductor circuit 1100 is connected between the non-inverting output terminal and the inverting output terminal of the first driver amplifier 1077. Accordingly, the impedance moves relatively large on the constant conductance circle from the start point Zda1 (out) along the counterclockwise locus, and as a result, the impedance moves to the first destination point Z1.

  Next, the two first inductors Ls1 of the first output matching circuit 1091 are connected to both ends of the inductor Lo1 of the first inductor circuit 1100. Accordingly, the two inductors Ls1 move the impedance from the first destination point Z1 to the destination point Z2 along a clockwise locus on the constant resistance circle.

  Next, the impedance Zc determined by the output impedance of the second driver amplifier 1078 turned off by the second control signal DA2_Cnt and the impedance of the second inductor Ls2 of the second inductor circuit 1101 and the second output matching circuit 1092 is The impedance moves from the second destination point Z2 to the third destination point Z3 along a clockwise trajectory.

  Next, the amount of impedance movement from the third destination point Z3 to the relatively small output impedance Zout of the final destination point is the capacitance of the capacitance Cp of the output circuit 1090 that can be controlled by the control signal Cp_Cnt. Can be set.

  The amount of movement of the impedance described above is set so that the output impedance Zout of the first output matching circuit 1091 which is the final destination point Zout and the relatively small input impedance Zin of the input matching circuit 124 have a complex conjugate relationship. .

  In this way, when the low-band (LB) first RF transmission signal is output by the single RF power amplifier 123, a relatively small input impedance Zin of the input matching circuit 124 is obtained, as shown in the Smith chart of FIG. And a relatively small output impedance Zout of the first output matching circuit 1091 can be obtained.

  The start point of the Smith chart of FIG. 15B is the relatively small output impedance Zda2 (out) because the second driver amplifier 1078 is turned on by the second control signal DA2_Cnt. Next, a relatively large inductor Lo2 of the second inductor circuit 1101 is connected between the non-inverting output terminal and the inverting output terminal of the second driver amplifier 1078. Accordingly, the impedance moves relatively large along the counterclockwise locus on the constant conductance circle from the start point Zda2 (out). As a result, the impedance moves to the first destination point Z1.

  Next, two second inductors Ls2 of the second output matching circuit 1092 are connected to both ends of the inductor Lo2 of the second inductor circuit 1101. Accordingly, the two inductors Ls2 move the impedance from the first destination point Z1 to the destination point Z2 along a clockwise locus on the constant resistance circle.

  Next, the second impedance Zc determined by the output impedance of the first driver amplifier 1077 which is turned off by the first control signal DA1_Cnt and the impedance of the first inductor Ls1 of the first inductor circuit 1100 and the first output matching circuit. The impedance moves from the destination point Z2 to the third destination point Z3 along a clockwise trajectory.

  Next, the amount of impedance movement from the third destination point Z3 to the relatively small output impedance Zout of the final destination point is the capacitance of the capacitance Cp of the output circuit 1090 that can be controlled by the control signal Cp_Cnt. Can be set.

  The amount of movement of the impedance described above is set so that the output impedance Zout of the second output matching circuit 1092 that is the final destination point Zout and the relatively large input impedance Zin of the input matching circuit 124 have a complex conjugate relationship. .

  In this way, when a high-band (HB) second RF transmission signal is output by the single RF power amplifier 123, a relatively large input impedance of the input matching circuit 124 is obtained as shown in the Smith chart of FIG. Good matching (matching) can be obtained between Zin and the relatively large output impedance Zout of the second output matching circuit 1092.

  In FIG. 14, as in FIG. 6, the amount of movement from the second destination point Z2 to the third destination point Z3 is too large due to the output impedance Zc. (Consistency) may not be obtained. In this case, as in FIGS. 5 and 8, it is effective to replace the reactance element of the output circuit 1090 from the capacitor Cp to the inductor Lp as shown in FIG.

  FIG. 16 integrates a plurality of driver amplifiers that drive a single RF power amplifier that outputs RF transmission signals of a plurality of frequency bands by means of impedance conversion using an inductor Lp instead of the capacitor Cp of the output circuit 1090 of FIG. It is a figure which shows the structure of RFIC (10) by other Embodiment of this invention which was made into.

<< RFIC with multiple low-noise amplifiers >>
FIG. 17 shows a plurality of low noise amplifiers that amplify a plurality of frequency band RF reception signals received by a single antenna 14 that receives a plurality of frequency band RF reception signals and a single external matching circuit 224. It is a figure which shows the structure of RFIC (10) by embodiment of this invention integrated.

  The RFIC (10) shown in FIG. 17 includes an input matching circuit Zxy including a first internal input matching circuit 2091 and a second internal input matching circuit 2092, a first low noise amplifier 2077, and a second low noise amplifier 2078. ing. Also, the first internal input matching circuit 2091 and the second internal input matching circuit 2092 of the input matching circuit Zxy share the input circuit 2090.

  The single antenna 14 and the single external matching circuit 224 connected to the RFIC (10) shown in FIG. 17 are the first RF received signal of the first frequency f1 of the low band (LB) and the first of the high band (HB). The second RF reception signal having the two frequencies f2 is supplied to the input circuit 2090 of the input matching circuit Zxy. An RF signal input terminal of a single external matching circuit 224 is connected to the single antenna 14. The RF complementary signal output terminal of the single external matching circuit 224 is connected to the RF complementary signal input terminals IN and / IN of the RFIC (10). Through the RF complementary signal input terminals IN and / IN, the first RF reception signal having the first frequency f1 in the low band (LB) and the second RF having the second frequency f2 in the high band (HB) are output from the single external matching circuit 224. The received signal is supplied to the input circuit 2090 of the input matching circuit Zxy. The output impedance Zout of the single external matching circuit 224 when supplying the first RF reception signal of the first frequency f1 by the single external matching circuit 224 and the second RF reception signal of the second frequency f2 by the single external matching circuit 224 Is different from the output impedance Zout of the single external matching circuit 224 at the time of supply.

  When the single external matching circuit 224 supplies the first RF reception signal having the first frequency f1, the first low noise amplifier in which the first RF reception signal having the first frequency f1 in the low band (LB) is supplied to the RF signal input terminal. 2077 is activated. At this time, the second low noise amplifier 2078 to which the second RF reception signal having the second frequency f2 of the high band (HB) is supplied to the RF signal input terminal is deactivated.

  When the single external matching circuit 224 supplies the second RF reception signal having the second frequency f2, the second low noise in which the second RF reception signal having the second frequency f2 in the high band (HB) is supplied to the RF signal input terminal. Amplifier 2078 is activated. At this time, the first low-noise amplifier 2077 to which the first RF reception signal having the first frequency f1 in the low band (LB) is supplied to the RF signal input terminal is deactivated.

  Between the RF signal input terminal of the first low noise amplifier 2077 to which the first RF received signal of the first frequency f1 in the low band (LB) is supplied to the RF signal input terminal and the RF signal output terminal of the single external matching circuit 224 Is connected to a first internal input matching circuit 2091. The RF signal input terminal of the second low noise amplifier 2078 to which the second RF received signal of the second frequency f2 of the high band (HB) is supplied to the RF signal input terminal and the RF signal output terminal of the single external matching circuit 224 A second internal input matching circuit 2092 is connected between them.

  The first internal input matching circuit 2091 includes two first inductors Ls1, and the second internal input matching circuit 2092 also includes two second inductors Ls2. The RF complementary signal output terminal of the first internal input matching circuit 2091 is connected to the RF complementary signal input terminal of the first low noise amplifier 2077, and the RF complementary signal output terminal of the second internal input matching circuit 2092 is the second low noise. It is connected to the RF complementary signal input terminal of the amplifier 2078. The RF complementary signal input terminal of the first internal input matching circuit 2091 and the RF complementary signal input terminal of the second internal input matching circuit 2092 are connected to the RF of a single external matching circuit 224 via the shared input circuit 2090. Commonly connected to complementary signal output terminals.

  That is, in the first internal input matching circuit 2091, one end of one first inductor Ls1 and one end of the other first inductor Ls1 function as an RF complementary signal output terminal of the first internal input matching circuit 2091. The low noise amplifier 2077 is connected to the non-inverting input terminal and the inverting input terminal, respectively. In the first internal input matching circuit 2091, the other end of one first inductor Ls1 and the other end of the other first inductor Ls1 function as RF complementary signal input terminals IN and / IN of the first internal input matching circuit 2091. On the other hand, it is connected to the RF complementary signal output terminal of a single external matching circuit 224. In the second internal input matching circuit 2092, one end of one second inductor Ls2 and one end of the other second inductor Ls2 function as an RF complementary signal output terminal of the second internal input matching circuit 2092, while second low noise. The amplifier 2078 is connected to the non-inverting input terminal and the inverting input terminal, respectively. In the second internal input matching circuit 2092, the other end of one second inductor Ls2 and the other end of the other second inductor Ls2 function as RF complementary signal input terminals IN and / IN of the second internal input matching circuit 2092. On the other hand, it is connected to the RF complementary signal output terminal of a single external matching circuit 224.

In FIG. 17, Zin is the input impedance of the first internal input matching circuit 2091 and the second internal input matching circuit 2092, Z _LNA1 (in) is the input impedance of the first low noise amplifier 2077, and Z _LNA2 (in ) Is the input impedance of the second low noise amplifier 2078. Further, the capacitance of the capacitor Cin of the input circuit 2090 can be controlled by a control signal Cin_Cnt.

  FIG. 18 is a diagram showing a configuration and an equivalent circuit of the first low noise amplifier 2077 and the second low noise amplifier 2078 of the RFIC shown in FIG.

  As shown in FIG. 18A, the first and second low-noise amplifiers 2077 and 2078 have a low-band (LB) or high-band (HB) RF transmission complementary input signal Vin1 via capacitors Cin1 and Cin2 at the base. , / Vin1 is supplied to the differential pair transistors Q1 and Q2. A base bias voltage is supplied from the base bias terminal Bias to the bases of the differential pair transistors Q1 and Q2 via base resistors Rb1 and Rb2. The first and second low noise amplifiers 2077 and 2078 are activated by starting the supply of the base bias voltage to the base bias terminal Bias, and the first and second low noise amplifiers 2077 and 2078 are stopped by stopping the supply of the base bias voltage. The noise amplifiers 2077 and 2078 are deactivated. By connecting the loads Lo1 and Lo2 to the collectors of the differential pair transistors Q1 and Q2, RF transmission complementary output signals Vout and / Vout are generated from the loads Lo1 and Lo2.

  FIG. 18B shows an equivalent circuit of the first and second low noise amplifiers 2077 and 2078. The equivalent circuit is a capacitance Ci between two nodes supplied with RF transmission complementary input signals Vin1 and / Vin1. And a base resistor 2Rb connected in parallel.

  The first and second internal input matching circuits 2091 and 2092 of the RFIC shown in FIG. 17 can be configured in substantially the same manner as the first and second output matching circuits 1091 and 1092 of the RFIC shown in FIG. The RFIC input circuit 2090 shown in FIG. 17 can be configured like a circuit portion 1090 shown in FIG. 7 in substantially the same manner as the RFIC output circuit 1090 shown in FIG.

  In FIG. 19, in the RFIC (10) shown in FIG. 17, the first low noise amplifier 2077 for amplifying the first RF reception signal of the first frequency f1 in the low band (LB) is activated, and the second in the high band (HB). It is a figure which shows the structure of an equivalent circuit in case the 2nd low noise amplifier 2078 which amplifies the 2nd RF received signal of the frequency f2 is deactivated. In this case, the single external matching circuit 224 outputs the first RF reception signal having the first frequency f1 in the low band (LB).

In this case, together with the first and second internal input matching circuits 2091 and 2092, the input impedance Z _LNA1 (in) of the first low noise amplifier 2077 controlled to be activated is also controlled to be deactivated. The input impedance Z _LNA2 (in) of the second low noise amplifier 2078 also becomes a load on the output signal of the single external matching circuit 224.

  20 is an equivalent circuit of the RFIC of FIG. 17 shown in FIG. 19, and the output impedance Zout of the single external matching circuit 224 when the first or second RF reception signal is supplied by the single external matching circuit 224. 6 is a Smith chart that analyzes the state of matching (matching) with the input impedance Zin of the first and second internal input matching circuits 2091 and 2092. FIG.

  That is, FIG. 20A shows the output impedance Zout of the single external matching circuit 224 and the first internal matching circuit 224 when the first RF reception signal of the first frequency f1 in the low band (LB) is supplied by the single external matching circuit 224. It is a figure which shows the Smith chart which analyzed the state of matching (matching) with the input impedance Zin of the input matching circuit 2091. FIG. 20B shows the output impedance Zout of the single external matching circuit 224 and the second impedance when the second RF received signal of the second frequency f2 in the high band (HB) is supplied by the single external matching circuit 224. It is a figure which shows the Smith chart which analyzed the state of matching (matching) with the input impedance Zin of the internal input matching circuit 2092. 20A and 20B are normalized by dividing the load impedance of the 50 ohm antenna 14.

The starting point of the Smith chart of FIG. 20A is a relatively large input impedance Z _LNA1 (in) of the first low noise amplifier 2077. For example, the normalized value of the input impedance Z _LNA1 (in) is approximately 0.2-j · 0.5. Next, one end of two first inductors Ls1 having a relatively large inductance of the first internal input matching circuit 2091 is connected to the non-inverting input terminal and the inverting input terminal of the first low noise amplifier 2077. Accordingly, the impedance moves relatively large along a clockwise locus on the 0.2 constant resistance circle from the start point Z _LNA1 (in). As a result, the normalized value of the first destination point Z3 is, for example, 0.2 + j · 0.4.

Next, the two second inductors Ls2 of the second internal input matching circuit 2092 and the non-inverting input of the second low noise amplifier 2078 are connected to the other ends of the two first inductors Ls1 of the first internal input matching circuit 2091. Terminal and inverting input terminal are connected. The input impedance Z _LNA2 (in) of the second low noise amplifier 2078 controlled to be inactive is composed of an input capacitor Ci2 and a base resistor 2Rb. Assuming that the resistance value of the base resistor 2Rb is extremely large, the impedance when the second internal input matching circuit 2092 and the second low noise amplifier 2078 are viewed from the other ends of the two first inductors Ls1 of the first internal input matching circuit 2091. Zd is given by Zd = j (2ωLs2-1 / (ωCi2)). Therefore, the impedance moves to the second destination point Z4 having a normalized value of 0.2 + j · 0.5, for example, in a clockwise trajectory from the first destination point Z3 due to the impedance Zd.

  Further, since the capacitor Cin having a relatively large capacitance of the input circuit 2090 is finally connected to the other ends of the two first inductors Ls1 of the first internal input matching circuit 2091, from the second destination point Z4. For example, the impedance moves to the final destination point of about 1.0 + j · 0.4 normalized by the clockwise trajectory.

  The input impedance Zin of the first and second internal input matching circuits 2091 and 2092, which is the final destination point of about 1.0 + j · 0.4, and a single external matching of about 1.0−j · 0.4 The amount of impedance movement described above is set so that the relatively small output impedance Zout of the circuit 224 has a complex conjugate relationship.

  In this way, when the low-band (LB) first RF reception signal is supplied by the single external matching circuit 224, the single external matching circuit 224 is relatively small as shown in the Smith chart of FIG. Good matching (matching) can be obtained between the output impedance Zout and the relatively small input impedance Zin of the first and second internal input matching circuits 2091 and 2092.

The starting point of the Smith chart of FIG. 20B is a relatively small input impedance Z _LNA2 (in) of the second low noise amplifier _2078. For example, the normalized value of the input impedance Z _LNA2 (in) is approximately. 0.2-j · 0.3. Next, one end of two first inductors Ls2 having a relatively small inductance of the second internal input matching circuit 2092 is connected to the non-inverting input terminal and the inverting input terminal of the second low noise amplifier 2078. However, since the frequency is high, the impedance moves relatively large along a clockwise locus on the 0.2 constant resistance circle from the start point Z _LNA2 (in). As a result, the normalized value of the first destination point Z3 is, for example, 0.2 + j · 0.5.

Next, the two first inductors Ls1 of the first internal input matching circuit 2091 and the non-inverting input of the first low noise amplifier 2077 are connected to the other ends of the two second inductors Ls2 of the second internal input matching circuit 2092. Terminal and inverting input terminal are connected. The input impedance Z _LNA1 (in) of the first low noise amplifier 2077 controlled to be inactive is composed of an input capacitance Ci and a base resistance 2Rb. Assuming that the resistance value of the base resistor 2Rb is extremely large, the impedance when the first internal input matching circuit 2091 and the first low noise amplifier 2077 are viewed from the other ends of the two second inductors Ls2 of the second internal input matching circuit 2092. Zd is given by Zd = j (2ωLs1-1 / (ωCi)).

  Therefore, the impedance Zd moves the impedance to the second destination point Z4 having a normalized value of 0.2 + j · 0.6, for example, in a clockwise trajectory from the first destination point Z3.

  In addition, since the capacitor Cin having a relatively small capacitance of the input circuit 1090 is finally connected to the other ends of the two second inductors Ls2 of the second internal input matching circuit 2092, from the second destination point Z4. For example, the impedance moves to a final destination point of about 1.0 + j · 0.8 normalized by a clockwise trajectory.

  The input impedance Zin of the first and second internal input matching circuits 2091 and 2092 at the final destination point of about 1.0 + j · 0.8 and a single external matching circuit of about 1.0−j · 0.8 The amount of impedance movement described above is set so that the relatively large input impedance Zin of 224 has a complex conjugate relationship.

  In this way, when the high-band (HB) second RF reception signal is supplied by the single external matching circuit 224, as shown in the Smith chart of FIG. Good matching (matching) can be obtained between the large output impedance Zout and the relatively large input impedance Zin of the first and second internal input matching circuits 2091 and 2092.

  If the input impedance Zd causes the amount of movement from the first destination point Z3 to the second destination point Z4 to be too large, impedance conversion using the capacitance Cin of the input circuit 2090 cannot provide good output matching (matching). There is. In this case, as shown in FIG. 21, it is effective to replace the reactance element of the input circuit 2090 from the capacitor Cin to the inductor Lin. That is, the movement amount from the first movement destination point Z3 to the second movement destination point Z4 is too large because the input capacities of the low noise amplifiers 2077 and 2078 are too large.

  FIG. 21 integrates a plurality of low noise amplifiers driven by a single external matching circuit 224 that outputs RF reception signals of a plurality of frequency bands by the impedance conversion method using the inductor Lin of the input circuit 2090 of FIG. It is a figure which shows the structure of RFIC (10) by other embodiment of this invention made. The inductor Lin of the input circuit 2090 shown in FIG. 19 compensates for impedance shift due to an excessively large input capacitance of the low noise amplifiers 2077 and 2078. That is, when the input capacitance is too large, the output impedance passes through the input impedance Zin when the final destination point moves clockwise on the constant conductance circle in the Smith chart of FIG. 20 (A) or (B). It will move to near Zout. The inductor Lin of the input circuit 2090 in FIG. 21 can move counterclockwise on the constant conductance circle from the impedance moved to the vicinity of the output impedance Zout and move the final destination point to the input impedance Zin. In this manner, good input matching (matching) can be obtained by the impedance conversion technique using the inductor Lin of the input circuit 2090 of FIG.

  FIG. 22 shows a single external to RFIC including first and second low noise amplifiers 2077 and 2078, first and second inductor circuits 2100 and 2101, and first and second internal input matching circuits 2091 and 2092. It is a figure which shows a mode that the 1st and 2nd RF received signal is supplied from the matching circuit.

  In the circuit shown in FIG. 22, a first inductor circuit 2100 including an inductor Lo1 is connected between the input of the first low noise amplifier 2077 and the output of the first internal input matching circuit 2091. A second inductor circuit 2101 including an inductor Lo2 is connected between the input of the second low noise amplifier 2078 and the output of the second internal input matching circuit 2092. In the circuit shown in FIG. 22, the capacitance of the capacitor Cin of the input circuit 2090 can be controlled by the control signal Cin_Cnt as shown in FIG.

  FIG. 23 shows the output impedance Zout of the single external matching circuit 224 when the RF received signal is supplied to the first and second low noise amplifiers 2077 and 2078 by the single external matching circuit 224 in the RFIC shown in FIG. It is a figure which shows the Smith chart which analyzed the state of matching (matching) with the input impedance Zin of the 1st and 2nd internal input matching circuit.

  FIG. 23A shows the output impedance Zout of the single external matching circuit 224 and the first internal input matching when the first RF received signal of the first frequency f1 in the low band (LB) is supplied by the single external matching circuit 224. It is a figure which shows the Smith chart which analyzed the state of matching (matching) with the input impedance Zin of the circuit 2091. FIG. 23B shows the output impedance Zout and the second output impedance Zout of the single external matching circuit 224 when the second RF received signal of the second frequency f2 in the high band (HB) is supplied by the single external matching circuit 224. It is a figure which shows the Smith chart which analyzed the state of matching (matching) with the input impedance Zin of the internal input matching circuit 2092. Also, the Smith charts of FIGS. 23A and 23B are normalized by dividing the load impedance of the 50 ohm antenna 14 as in FIGS. 20A and 20B.

The starting point of the Smith chart of FIG. 23A is a relatively large input impedance Z _LNA1 (in) of the first low noise amplifier 2077. Next, a relatively large inductor Lo1 of the first inductor circuit 2100 is connected between the non-inverting input terminal and the inverting input terminal of the first low noise amplifier 2077. Therefore, the impedance moves relatively large on the constant conductance circle from the start point Z _LNA1 (in) along the counterclockwise locus, and as a result, the impedance moves to the first destination point Z3.

  Next, the two first inductors Ls1 of the first input matching circuit 2091 are connected to both ends of the inductor Lo1 of the first inductor circuit 2100. Accordingly, the two inductors Ls1 move the impedance from the first destination point Z3 to the second destination point Z4 along a clockwise locus on the constant resistance circle.

  Next, a clockwise trajectory from the second destination point Z4 by an impedance Zd determined by the input impedance of the second low noise amplifier 2078 and the impedance of the second inductor Ls2 of the second inductor circuit 2101 and the second input matching circuit 2092. Thus, the impedance moves to the third destination point Z5.

  Next, the amount of impedance movement from the third destination point Z5 to the relatively small input impedance Zin of the final destination point is the capacitance of the capacitance Cin of the input circuit 2090 that can be controlled by the control signal Cin_Cnt. Can be set.

  The amount of movement of the impedance described above is set so that the input impedance Zin of the first input matching circuit 2091 that is the final destination point Zin and the relatively small output impedance Zout of the output matching circuit 224 have a complex conjugate relationship. .

  In this way, when the low-band (LB) first RF reception signal is supplied by the single external output matching circuit 224, the comparison of the single external output matching circuit 224 is performed as shown in the Smith chart of FIG. Good matching (matching) can be obtained between the relatively small output impedance Zout and the relatively small input impedance Zin of the first input matching circuit 2091.

The starting point of the Smith chart of FIG. _{23B is} the relatively large input impedance Z _LNA2 (in) of the second low noise amplifier 2078. Next, a relatively large inductor Lo2 of the second inductor circuit 2101 is connected between the non-inverting input terminal and the inverting input terminal of the second low noise amplifier 2078. Accordingly, the impedance relatively moves in a counterclockwise locus on the constant conductance circle from the start point Z _LNA2 (in), and as a result, the impedance moves to the first destination point Z3.

  Next, the two second inductors Ls2 of the second input matching circuit 2092 are connected to both ends of the inductor Lo2 of the second inductor circuit 2101. Accordingly, the two inductors Ls2 move the impedance from the first destination point Z3 to the second destination point Z4 along a clockwise locus on the constant resistance circle.

  Next, the locus clockwise from the second destination point Z4 is determined by the impedance Zd determined by the input impedance of the first low noise amplifier 2077 and the impedance of the first inductor Ls1 of the first inductor circuit 2100 and the first input matching circuit 2091. Thus, the impedance moves to the third destination point Z5.

  Next, the amount of impedance movement from the third destination point Z5 to the relatively small input impedance Zin of the final destination point is the capacitance of the capacitance Cin of the input circuit 2090 that can be controlled by the control signal Cin_Cnt. Can be set.

  The amount of movement of the impedance described above is set so that the input impedance Zin of the second input matching circuit 2092, which is the final destination point Zin, and the relatively small output impedance Zout of the output matching circuit 224 have a complex conjugate relationship. .

  In this way, when the high-band (HB) second RF reception signal is supplied by the single external output matching circuit 224, as shown in the Smith chart of FIG. Good matching (matching) can be obtained between the relatively large output impedance Zout and the relatively large input impedance Zin of the second input matching circuit 2092.

  In FIG. 22, as in FIG. 19, the amount of movement from the second destination point Z4 to the third destination point Z5 is too large due to the input impedance Zd, so that excellent output matching is achieved by impedance conversion using the capacitance Cin of the input circuit 2090. (Consistency) may not be obtained. In this case, as in FIG. 21, it is effective to replace the reactance element of the input circuit 2090 from the capacitor Cin to the inductor Lin as shown in FIG.

  FIG. 24 shows a plurality of low noise amplifiers driven by a single external matching circuit for supplying RF transmission / reception of a plurality of frequency bands by means of impedance conversion using an inductor Lin instead of the capacitor Cin of the input circuit 2090 of FIG. It is a figure which shows the structure of RFIC (10) by other embodiment of this invention which integrated.

  FIG. 25 shows a single external to RFIC that includes first and second low noise amplifiers 2077, 2078, first and second inductor circuits 2100, 2101, and first and second internal input matching circuits 2091, 2092. It is a figure which shows a mode that the 1st and 2nd RF received signal is supplied from the matching circuit.

  In the circuit shown in FIG. 25, the first input matching circuit 2091 includes two first capacitors Cs1, and the second input matching circuit 2092 also includes two first capacitors Cs2. In the circuit shown in FIG. 25, a first inductor circuit 2100 including an inductor Lo1 is connected between the input of the first low noise amplifier 2077 and the output of the first input matching circuit 2091. A second inductor circuit 2101 including an inductor Lo2 is connected between the input of the second low noise amplifier 2078 and the output of the second input matching circuit 2092. In the circuit shown in FIG. 25, the inductor Lo1 of the first inductor circuit 2100 can be controlled by the control signal Lo1_Cnt, and the inductor Lo2 of the second inductor circuit 2101 can be controlled by the control signal Lo2_Cnt. Also in the circuit shown in FIG. 25, the capacitance of the capacitor Cin of the input circuit 2090 can be controlled by the control signal Cin_Cnt.

  26 shows an output impedance of the single external matching circuit 224 when the RF received signal is supplied to the first and second low noise amplifiers 2077 and 2078 by the single external matching circuit 224 in the RFIC shown in FIG. It is a figure which shows the Smith chart which analyzed the state of matching (matching) with Zout and the input impedance Zin of the 1st and 2nd internal input matching circuit.

  26A shows the output impedance Zout of the single external matching circuit 224 and the first internal input matching when the first RF received signal of the first frequency f1 in the low band (LB) is supplied by the single external matching circuit 224. FIG. It is a figure which shows the Smith chart which analyzed the state of matching (matching) with the input impedance Zin of the circuit 2091. FIG. 26B shows the output impedance Zout of the single external matching circuit 224 and the second impedance when the second external RF reception signal having the second frequency f2 in the high band (HB) is supplied by the single external matching circuit 224. It is a figure which shows the Smith chart which analyzed the state of matching (matching) with the input impedance Zin of the internal input matching circuit 2092. Also, the Smith charts of FIGS. 26A and 26B are normalized by dividing the load impedance of the 50 ohm antenna 14 as in FIGS. 20A and 20B.

The starting point of the Smith chart of FIG. 26A is a relatively large input impedance Z _LNA1 (in) of the first low noise amplifier 2077. Next, a relatively large inductor Lo1 of the first inductor circuit 2100 is connected between the non-inverting input terminal and the inverting input terminal of the first low noise amplifier 2077. Therefore, the impedance moves relatively large on the constant conductance circle from the start point Z _LNA1 (in) along the counterclockwise locus, and as a result, the impedance moves to the first destination point Z3.

  Next, two first capacitors Cs1 of the first input matching circuit 2091 are connected to both ends of the inductor Lo1 of the first inductor circuit 2100. Therefore, the impedance moves from the first destination point Z3 to the second destination point Z4 along the counterclockwise locus on the constant resistance circle by the two capacitors Cs1.

  Next, a clockwise trajectory from the second destination point Z4 by the impedance Zd determined by the input impedance of the second low noise amplifier 2078 and the impedance of the second capacitor Cs2 of the second inductor circuit 2101 and the second input matching circuit 2092. Thus, the impedance moves to the third destination point Z5.

  Next, the amount of impedance movement from the third destination point Z5 to the relatively small input impedance Zin of the final destination point is the capacitance of the capacitance Cin of the input circuit 2090 that can be controlled by the control signal Cin_Cnt. Can be set.

  The amount of movement of the impedance described above is set so that the input impedance Zin of the first input matching circuit 2091 that is the final destination point Zin and the relatively small output impedance Zout of the output matching circuit 224 have a complex conjugate relationship. .

  In this way, when the low-band (LB) first RF received signal is supplied by the single external output matching circuit 224, the comparison of the single external output matching circuit 224 is performed as shown in the Smith chart of FIG. Good matching (matching) can be obtained between the relatively small output impedance Zout and the relatively small input impedance Zin of the first input matching circuit 2091.

The starting point of the Smith chart of FIG. _{26B is} the relatively large input impedance Z _LNA2 (in) of the second low noise amplifier 2078. Next, a relatively large inductor Lo2 of the second inductor circuit 2101 is connected between the non-inverting input terminal and the inverting input terminal of the second low noise amplifier 2078. Accordingly, the impedance moves relatively large on the constant conductance circle from the start point Z _LNA2 (in) along the counterclockwise locus, and as a result, the impedance moves to the first destination point Z3.

  Next, two second capacitors Cs2 of the second input matching circuit 2092 are connected to both ends of the inductor Lo2 of the first inductor circuit 2100. Therefore, the impedance moves from the first destination point Z3 to the second destination point Z4 along the counterclockwise locus on the constant resistance circle by the two capacitors Cs2.

  Next, a clockwise trajectory from the second destination point Z4 by the impedance Zd determined by the input impedance of the first low noise amplifier 2077 and the impedance of the first capacitor Cs1 of the first inductor circuit 2100 and the first input matching circuit 2091. Thus, the impedance moves to the third destination point Z5.

  Next, the amount of impedance movement from the third destination point Z5 to the relatively small input impedance Zin of the final destination point is the capacitance of the capacitance Cin of the input circuit 2090 that can be controlled by the control signal Cin_Cnt. Can be set.

  The amount of movement of the impedance described above is set so that the input impedance Zin of the second input matching circuit 2092, which is the final destination point Zin, and the relatively small output impedance Zout of the output matching circuit 224 have a complex conjugate relationship. .

  In this way, when the high-band (HB) second RF reception signal is supplied by the single external output matching circuit 224, as shown in the Smith chart of FIG. Good matching (matching) can be obtained between the relatively large output impedance Zout and the relatively large input impedance Zin of the second input matching circuit 2092.

  In FIG. 25, as in FIGS. 19 and 22, the amount of movement from the second destination point Z4 to the third destination point Z5 is too large due to the input impedance Zd, so that impedance conversion by the capacitance Cin of the input circuit 2090 is good. Output matching may not be obtained. In this case, as in FIGS. 21 and 24, it is effective to replace the reactance element of the input circuit 2090 from the capacitor Cin to the inductor Lin as shown in FIG.

  FIG. 27 shows a plurality of low noise amplifiers driven by a single external matching circuit that supplies RF transmission / reception of a plurality of frequency bands by means of impedance conversion using an inductor Lin instead of the capacitor Cin of the input circuit 2090 of FIG. It is a figure which shows the structure of RFIC (10) by other embodiment of this invention which integrated.

<< RFIC according to an embodiment of the present invention >>
FIG. 28 is a diagram showing a configuration of the RFIC (10) that supports both the GSM communication system and the WCDMA communication system according to the embodiment of the present invention.

  The RFIC 10 shown in FIG. 28 includes a WCDMA reception block 101, a GSM reception block 102, a first local signal generation block 103, and a GSM / WCDMA / baseband reception processing block 104. The RFIC 10 includes a GSM transmission block 105, a second local signal generation block 106, a WCDMA transmission block 107, and a GSM / WCDMA / baseband transmission processing block 108.

  The RFIC 10 in FIG. 28 is supplied with RF reception signals of the WCDMA communication system and the GSM communication system from the antenna 14 of the mobile phone terminal via the front end module 13. The GSM transmission signal and the WCDMA transmission signal formed from the RFIC 10 in FIG. 28 are supplied to the antenna 14 of the mobile phone terminal via the GSM / RF power amplifier module 11, the WCDMA / RF power amplifier module 12, and the front end module 13. .

<< Reception of WCDMA >>
Compared with the RFIC shown in FIG. 1, in the RFIC 10 shown in FIG. 28, the triple-band WCDMA reception signals of the band 1, band 9, and band 6 are supplied from the duplexers 1301, 1302, and 1303 to the common WCDMA reception input terminal of the RFIC 10. The

  The band 1 WCDMA reception signal supplied from the duplexer 1301 to the common input terminal is supplied to the internal matching circuit 1016 and the low noise amplifier 1010 of the WCDMA reception block 101. At this time, the output impedance Zout of the duplexer 1301 and the input impedance Zin of the internal matching circuit 1016 are set in a complex conjugate relationship, so that matching (matching) is obtained between the duplexer 1301 and the internal matching circuit 1016. It has been.

  The band 9 WCDMA reception signal supplied from the duplexer 1302 to the common input terminal is supplied to the internal matching circuit 1017 and the low noise amplifier 1011 of the WCDMA reception block 101. At this time, the output impedance Zout of the duplexer 1302 and the input impedance Zin of the internal matching circuit 1017 are set in a complex conjugate relationship, so that matching (matching) is obtained between the duplexer 1302 and the internal matching circuit 1017. It has been.

  The band 6 WCDMA reception signal supplied from the duplexer 1303 to the common input terminal is supplied to the internal matching circuit 1018 and the low noise amplifier 1012 of the WCDMA reception block 101. At this time, the output impedance Zout of the duplexer 1303 and the input impedance Zin of the internal matching circuit 1018 are set in a complex conjugate relationship, so that matching (matching) is obtained between the duplexer 1302 and the internal matching circuit 1017. It has been.

  In response to whether the RFIC 10 shown in FIG. 28 receives WCDMA reception signals of band 1, band 9, or band 6 triple band, one corresponding one of the three low noise amplifiers 1010, 1011, 1012 is active. And the remaining two low noise amplifiers are deactivated. In this way, when the RFIC 10 shown in FIG. 28 receives a triple-band WCDMA reception signal, the embodiment of the present invention related to the reception functions shown in FIGS. 17 to 27 can be applied.

<< Reception of GSM >>
Compared with the RFIC shown in FIG. 1, in the RFIC 10 shown in FIG. 28, quad-band GSM received signals of DCS1800, PCS1900, GSM850, and EGSM (GSM900) are transmitted from the surface acoustic wave filters 1304, 1305, 1306, and 1307 to the RFIC 10 It is supplied to the GSM reception input terminal.

  The GSM reception signal of DCS 1800 supplied from the surface acoustic wave filter 1304 to the common input terminal is supplied to the internal matching circuit 1026 and the low noise amplifier 1020 of the GSM reception block 102. At this time, the output impedance Zout of the surface acoustic wave filter 1304 and the input impedance Zin of the internal matching circuit 1026 are set in a complex conjugate relationship, thereby matching between the surface acoustic wave filter 1304 and the internal matching circuit 1026 ( Alignment).

  The GSM reception signal of PCS 1900 supplied from the surface acoustic wave filter 1305 to the common input terminal is supplied to the internal matching circuit 1027 and the low noise amplifier 1021 of the GSM reception block 102. At this time, the output impedance Zout of the surface acoustic wave filter 1305 and the input impedance Zin of the internal matching circuit 1027 are set in a complex conjugate relationship, thereby matching between the surface acoustic wave filter 1305 and the internal matching circuit 1027 ( Alignment).

  The GSM 850 GSM reception signal supplied from the surface acoustic wave filter 1306 to the common input terminal is supplied to the internal matching circuit 1028 and the low noise amplifier 1022 of the GSM reception block 102. At this time, the output impedance Zout of the surface acoustic wave filter 1306 and the input impedance Zin of the internal matching circuit 1028 are set in a complex conjugate relationship, thereby matching between the surface acoustic wave filter 1306 and the internal matching circuit 1028 ( Alignment).

  The EGSM (GSM900) GSM reception signal supplied from the surface acoustic wave filter 1307 to the common input terminal is supplied to the internal matching circuit 1029 and the low noise amplifier 1023 of the GSM reception block 102. At this time, the output impedance Zout of the surface acoustic wave filter 1307 and the input impedance Zin of the internal matching circuit 1029 are set in a complex conjugate relationship, thereby matching between the surface acoustic wave filter 1307 and the internal matching circuit 1029 ( Alignment).

  Corresponding to the four low noise amplifiers 1020, 1021, 1022, 1023 in response to whether the RFIC 10 shown in FIG. One is activated and the remaining three low noise amplifiers are deactivated. In this way, when the RFIC 10 shown in FIG. 28 receives a quad-band GSM reception signal, the embodiment of the present invention related to the reception functions shown in FIGS. 17 to 27 can be applied.

《GSM transmission》
In the RFIC 10 of FIG. 28, GSM850 and EGSM GSM transmission signals that are quad band low band (LB) of DCS1800, PCS1900, GSM850, and EGSM (GSM900) are generated from the frequency divider 1056 at the subsequent stage of the GSM transmission block 105. . GSM transmission signals of DCS 1800 and PCS 1900, which are high band (HB) of the GSM quad band, are generated from the frequency divider 1055 at the front stage of the GSM transmission block 105. The high-band (HB) DCS 1800 and PCS 1900 GSM transmission signals generated from the previous frequency divider 1055 are supplied to the RFIC common GSM transmission signal output terminal via the output matching circuit 1059A. Low band (LB) GSM850 and EGSM GSM transmission signals generated from the subsequent frequency divider 1056 are also supplied to the RFIC common GSM transmission signal output terminal via the output matching circuit 1059B. The high-band (HB) and low-band (LB) GSM transmission signals of the RFIC common GSM transmission signal output terminal are supplied to the common GSM transmission signal input terminal of the GSM / RF power amplifier module 11. The GSM / RF power amplifier module 11 includes a common RF power amplifier 112, an input matching circuit 114 and an output matching circuit 116 for a low band (LB), and an input matching circuit 113 and an output for a high band (HB). And a matching circuit 115.

  When transmitting a low-band (LB) GSM850 or EGSM GSM transmission signal, the output impedance Zout of the output matching circuit 1059B and the input impedance Zin of the input matching circuit 114 are set in a complex conjugate relationship. Matching has been obtained. At this time, the output impedance Zout of the output matching circuit 116 and the input impedance Zin of the low-pass filter 1315 are set in a complex conjugate relationship, so that matching is achieved between them.

  When transmitting high band (HB) DCS1800 and PCS1900 GSM transmission signals, the output impedance Zout of the output matching circuit 1059A and the input impedance Zin of the input matching circuit 113 are set in a complex conjugate relationship. (Matching) is obtained. At this time, the output impedance Zout of the output matching circuit 115 and the input impedance Zin of the low-pass filter 1316 are set in a complex conjugate relationship, so that matching is achieved between them.

  Compared with the RFIC shown in FIG. 1, the RFIC 10 shown in FIG. 28 reduces the number of external connection terminals of the RFIC and the GSM / RF power amplifier module 11 for transmitting a quad-band GSM transmission signal. Thus, when the RFIC 10 shown in FIG. 28 transmits a quad-band GSM transmission signal, the embodiment of the present invention related to the transmission function shown in FIGS. 2 to 16 can be applied.

<< Transmission of WCDMA >>
In the RFIC 10 of FIG. 28, the quad-band band 6 WCDMA RF transmission signal is generated from the driver amplifier 1077 and the output matching circuit 1079 C of the WCDMA transmission block 107. The quad-band band 9 WCDMA RF transmission signal is generated from the driver amplifier 1078 and the output matching circuit 1079 B of the WCDMA transmission block 107. Further, a quad-band band 1 WCDMA RF transmission signal is generated from the driver amplifier 1079 and the output matching circuit 1079 A of the WCDMA transmission block 107. Accordingly, any of the WCDMA / RF transmission signals of the band 6, 9 and 1 generated from the three output matching circuits 1079C, 1079B and 1079A are supplied to the common WCDMA transmission signal output terminal of the RFIC.

  Any WCDMA RF transmission signal of the RFIC common WCDMA transmission signal output terminal is supplied to the common WCDMA transmission signal input terminal of the WCDMA RF power amplifier module 12. The WCDMA RF power amplifier module 12 includes a common RF power amplifier 122, an input matching circuit 1210 and an output matching circuit 1230 for band 6, an input matching circuit 1211 and an output matching circuit 1231 for band 9, An input matching circuit 1212 and an output matching circuit 1232 for band 1 are included.

  When transmitting the WCDMA / RF transmission signal of band 6, the output impedance Zout of the output matching circuit 1079C of the RFIC WCDMA transmission block 107 and the input impedance Zin of the input matching circuit 1210 of the WCDMA / RF power amplifier module 12 are in a complex conjugate relationship. Thus, matching (matching) is obtained between the two. At this time, the output impedance Zout of the output matching circuit 1230 of the WCDMA / RF power amplifier module 12 and the input impedance Zin of the isolator 1317 are set in a complex conjugate relationship, and matching (matching) is obtained between them. It has been.

  When transmitting the WCDMA / RF transmission signal of band 9, the output impedance Zout of the output matching circuit 1079B of the RFIC WCDMA transmission block 107 and the input impedance Zin of the input matching circuit 1211 of the WCDMA / RF power amplifier module 12 are in a complex conjugate relationship. Thus, matching (matching) is obtained between the two. At this time, the output impedance Zout of the output matching circuit 1231 of the WCDMA / RF power amplifier module 12 and the input impedance Zin of the isolator 1318 are set in a complex conjugate relationship, so that matching (matching) is obtained between them. It has been.

  At the time of transmitting the band 1 WCDMA / RF transmission signal, the output impedance Zout of the output matching circuit 1079A of the RFIC WCDMA transmission block 107 and the input impedance Zin of the input matching circuit 1212 of the WCDMA / RF power amplifier module 12 are in a complex conjugate relationship. Thus, matching (matching) is obtained between the two. At this time, the output impedance Zout of the output matching circuit 1232 of the WCDMA / RF power amplifier module 12 and the input impedance Zin of the isolator 1319 are set in a complex conjugate relationship, so that matching (matching) is obtained between them. It has been.

  Compared with the RFIC shown in FIG. 1, in the RFIC 10 shown in FIG. 28, the number of external connection terminals of the RFIC for transmitting the triple-band WCDMA transmission signal and the WCDMA / RF power amplifier module 12 is reduced. As described above, when the RFIC 10 shown in FIG. 28 transmits a triple-band WCDMA transmission signal, the embodiment of the present invention related to the transmission function shown in FIGS. 2 to 16 can be applied. Since the other configuration shown in the RFIC 10 shown in FIG. 28 is the same as that of the RFIC shown in FIG.

  Although the invention made by the present inventor has been specifically described based on the embodiments, it is needless to say that the present invention is not limited thereto and can be variously modified without departing from the gist thereof.

  For example, the direct conversion architecture receiver of the RFIC GSM receiving block not only converts the GSM RF received signal into a zero IF received baseband signal, but also a low IF (low intermediate frequency) received analog. It can also be converted to a signal. The RFIC WCDMA receiving block direct conversion architecture receiver not only converts GSM RF received signals to zero IF received baseband signals, but also converts them to low IF received analog signals. You can also.

  Further, the RFIC including the reception block for GSM communication and the reception block for WCDMA communication can be the same integrated one-chip LSI as the Behes band signal processing LSI.

FIG. 1 is a diagram showing a configuration of an RFIC that supports both the GSM communication system and the WCDMA communication system, which have been studied by the present inventors prior to the present invention. FIG. 2 is a diagram showing a configuration of an RFIC according to an embodiment of the present invention in which a driver amplifier that drives a single RF power amplifier that outputs RF transmission signals of a plurality of frequency bands is integrated. FIG. 3 illustrates a second driver that amplifies a second RF transmission signal having a high frequency and a second frequency when a first driver amplifier that amplifies a first RF transmission signal having a low frequency and a first frequency is activated in the RFIC illustrated in FIG. It is a figure which shows the structure of the equivalent circuit in case an amplifier is deactivated. FIG. 4 shows the input impedance of the input matching circuit and the output impedance of the first or second output matching circuit when the first or second RF transmission signal is output by the single RF power amplifier in the RFIC shown in FIG. It is a figure which shows the Smith chart which analyzed the state of matching with. FIG. 5 shows another embodiment of the present invention in which a plurality of driver amplifiers for driving a single RF power amplifier that outputs RF transmission signals of a plurality of frequency bands by an impedance conversion method using an inductor of an output circuit are integrated. It is a figure which shows the structure of RFIC by. FIG. 6 is a diagram showing a configuration of an RFIC according to another embodiment of the present invention in which a plurality of driver amplifiers that drive a single RF power amplifier that outputs RF transmission signals of a plurality of frequency bands are integrated. FIG. 7 shows the input impedance of the input matching circuit and the output impedance of the first or second output matching circuit when the first or second RF transmission signal is output by the single RF power amplifier in the RFIC shown in FIG. It is a figure which shows the Smith chart which analyzed the state of matching with. FIG. 8 shows a book in which a plurality of driver amplifiers that drive a single RF power amplifier that outputs RF transmission signals of a plurality of frequency bands by an impedance conversion technique using an inductor instead of the capacitance of the output circuit of FIG. 6 are integrated. It is a figure which shows the structure of RFIC by other embodiment of invention. FIG. 9 is a diagram illustrating a configuration of a capacitor or an inductor used in an RFIC output circuit or input circuit according to various embodiments of the present invention. FIG. 10 is a diagram illustrating another configuration of a capacitor used in an output circuit or input circuit of an RFIC according to various embodiments of the present invention. FIG. 11 is a diagram showing the configuration of the first driver amplifier and the second driver amplifier of the RFIC shown in FIG. FIG. 12 shows a single RF as shown in FIG. 2 using an RFIC first driver amplifier, second driver amplifier, first output matching circuit, second output matching circuit, output circuit, and external input matching circuit. It is a figure which shows a mode that a power amplifier is driven. FIG. 13 shows matching when the RFIC shown in FIG. 12 drives a single RF power amplifier with a low-band 825 MHz low-band RF transmission signal and a high-band 1990 MHz through the input matching circuit as shown in FIG. It is a figure which shows the characteristic. FIG. 14 shows an RFIC using a first driver amplifier, a second driver amplifier, a first inductor circuit, a second inductor circuit, a first output matching circuit, a second output matching circuit, and an external input matching circuit. It is a figure which shows a mode that a single RF power amplifier is driven like FIG. FIG. 15 shows the input impedance of the input matching circuit 124 and the output of the first or second output matching circuit when the first or second RF transmission signal is output by the single RF power amplifier in the RFIC shown in FIG. It is a figure which shows the Smith chart which analyzed the state of matching with an impedance. FIG. 16 shows a book in which a plurality of driver amplifiers for driving a single RF power amplifier that outputs RF transmission signals of a plurality of frequency bands by means of impedance conversion using an inductor instead of the capacitance of the output circuit of FIG. It is a figure which shows the structure of RFIC by other embodiment of invention. FIG. 17 shows an integration of a plurality of low noise amplifiers for amplifying a plurality of frequency band RF reception signals received by a single antenna receiving a plurality of frequency band RF reception signals and a single external matching circuit. 1 is a diagram illustrating a configuration of an RFIC according to an embodiment of the present invention. 18 is a diagram showing a configuration and an equivalent circuit of the first low noise amplifier and the second low noise amplifier of the RFIC shown in FIG. FIG. 19 shows a second example of the RFIC shown in FIG. 17 in which the first low-noise amplifier that amplifies the first RF reception signal of the low-band first frequency is activated and the second RF reception signal of the high-band second frequency is amplified. It is a figure which shows the structure of an equivalent circuit in case a low noise amplifier is deactivated. FIG. 20 is an equivalent circuit of the RFIC of FIG. 17 shown in FIG. 19, and the output impedance of the single external matching circuit when the first or second RF received signal is supplied by the single external matching circuit and the first It is a figure which shows the Smith chart which analyzed the state of matching with the input impedance of a 2nd internal input matching circuit. FIG. 21 shows the present invention in which a plurality of low-noise amplifiers driven by a single external matching circuit that outputs RF reception signals of a plurality of frequency bands are integrated by the impedance conversion method using the inductor of the input circuit of FIG. It is a figure which shows the structure of RFIC by other embodiment. FIG. 22 shows the first and second low-noise amplifiers, first and second inductor circuits, first and second internal input matching circuits from a single external matching circuit to the RFIC. It is a figure which shows a mode that RF reception signal is supplied. FIG. 23 shows the output impedance of the single external matching circuit in the RFIC shown in FIG. 22 when the RF received signal is supplied to the first and second low-noise amplifiers by the single external matching circuit. It is a figure which shows the Smith chart which analyzed the state of matching with the input impedance of this internal input matching circuit. FIG. 24 integrates a plurality of low noise amplifiers driven by a single external matching circuit that supplies RF transmission / reception of a plurality of frequency bands by an impedance conversion method using an inductor instead of the capacitance C of the input circuit of FIG. It is a figure which shows the structure of RFIC by other embodiment of this invention which was made into. FIG. 25 shows the RFIC including the first and second low noise amplifiers, the first and second inductor circuits, the first and second internal input matching circuits, from the single external matching circuit to the first and second matching circuits. It is a figure which shows a mode that RF reception signal is supplied. FIG. 26 shows the output impedance of the single external matching circuit in the RFIC shown in FIG. 25 when the RF received signal is supplied to the first and second low noise amplifiers by the single external matching circuit. It is a figure which shows the Smith chart which analyzed the state of matching with the input impedance of 2 internal input matching circuits. FIG. 27 integrates a plurality of low-noise amplifiers driven by a single external matching circuit that supplies RF transmission / reception of a plurality of frequency bands by means of impedance conversion using an inductor instead of the capacitance of the input circuit of FIG. It is a figure which shows the structure of RFIC by other embodiment of this invention made. FIG. 28 is a diagram showing a configuration of an RFIC that supports both the GSM communication system and the WCDMA communication system according to the embodiment of the present invention.

Explanation of symbols

14 Antenna 123 RF power amplifier 124 Input matching circuit 10 RFIC
OUT, / OUT RF complementary signal output terminal 1090 output circuit 1091 first output matching circuit 1092 second output matching circuit Zin input impedance of input matching circuit 124 Zout output impedance of first and second output matching circuits 1091 and 1092 Ls1 first 1 inductor Ls2 2nd inductor 1077 1st driver amplifier 1078 2nd driver amplifier
Vin1 first RF transmission signal Vin2 second RF transmission signal 224 external matching circuit IN, / IN RF complementary signal input terminal 2090 input circuit 2091 first input matching circuit 2092 second input matching circuit Zout output impedance of external matching circuit 224 Input impedance of second input matching circuits 2091 and 2092 Ls1 First inductor Ls2 Second inductor 1077 First low noise amplifier 1078 Second low noise amplifier

Claims (25)

An external connection terminal, a first amplifier, a second amplifier, a first matching circuit, and a second matching circuit;
The first amplifier can amplify a first input signal having a first frequency to form a first output signal, and the second amplifier has a second frequency higher than the first frequency. An input signal can be amplified to form a second output signal;
The first matching circuit can supply the first output signal supplied from the first amplifier to the external connection terminal, and the second matching circuit can supply the second output supplied from the second amplifier. An output signal can be supplied to the external connection terminal;
An external circuit capable of supplying the first output signal and the second output signal can be connected to the external connection terminal outside a semiconductor integrated circuit,
The first matching circuit includes at least a first reactance element, so that the output impedance of the first matching circuit that supplies the first output signal of the first frequency to the external connection terminal is the first impedance of the first frequency. Matching with the input impedance of the external circuit to which the first output signal is supplied is possible,
The second matching circuit includes at least a second reactance element, so that an output impedance of the second matching circuit that supplies the second output signal of the second frequency to the external connection terminal is the second impedance of the second frequency. Matching with the input impedance of the external circuit to which the second output signal is supplied is possible,
When the first amplifier is activated and the first amplifier supplies the first output signal of the first frequency to the external circuit via the first matching circuit and the external connection terminal. The second amplifier is deactivated;
When the second amplifier is activated and the second amplifier supplies the second output signal of the second frequency to the external circuit via the second matching circuit and the external connection terminal. A semiconductor integrated circuit in which the first amplifier is deactivated. The first reactance element of the first matching circuit is connected between an output terminal of the first amplifier and the external connection terminal, and the second reactance element of the second matching circuit is an output terminal of the second amplifier. And the external connection terminal,
The first matching circuit and the second matching circuit share an output circuit connected to the external connection terminal, and the output circuit includes at least a third reactance element connected to the external connection terminal. 2. The semiconductor integrated circuit according to 1.   The first reactance element of the first matching circuit and the second reactance element of the second matching circuit are inductors, and the third reactance element of the output circuit is a capacitor or an inductor. Semiconductor integrated circuit.   The semiconductor integrated circuit according to claim 2, wherein the third reactance element of the output circuit can be controlled by a control signal. The first reactance element of the first matching circuit is connected to an output terminal of the first amplifier, and the second reactance element of the second matching circuit is connected to an output terminal of the second amplifier;
The first matching circuit includes a third reactance element connected between the output terminal of the first amplifier and the external connection terminal, and the second matching circuit includes the output terminal of the second amplifier and the external connection terminal. The semiconductor integrated circuit according to claim 1, further comprising a fourth reactance element connected between the connection terminal and the output circuit including a fifth reactance element connected to the external connection terminal.   The first reactance element of the first matching circuit and the second reactance element of the second matching circuit are inductors, and the third reactance element of the first matching circuit and the fourth reactance element of the second matching circuit. 6. The semiconductor integrated circuit according to claim 5, wherein the reactance element is a capacitor, and the fifth reactance element of the output circuit is a capacitor or an inductor.   The first reactance element of the first matching circuit and the second reactance element of the second matching circuit are inductors, and the third reactance element of the first matching circuit and the fourth reactance element of the second matching circuit. The semiconductor integrated circuit according to claim 5, wherein the reactance element is another inductor.   3. The driver amplifier for amplifying the first input signal having the first frequency, which is an RF frequency, and the two input signals having the second frequency, respectively, as the first amplifier and the second amplifier. The semiconductor integrated circuit as described.   6. The driver amplifier that amplifies the first input signal having the first frequency, which is an RF frequency, and the two input signals having the second frequency, respectively, the first amplifier and the second amplifier. The semiconductor integrated circuit as described.   9. The semiconductor integrated circuit according to claim 8, wherein the first amplifier and the second amplifier which are the driver amplifiers drive an RF power amplifier of an RF transmitter.   The semiconductor integrated circuit according to claim 9, wherein the first amplifier and the second amplifier that are the driver amplifiers drive an RF power amplifier of an RF transmitter. An external connection terminal, a first amplifier, a second amplifier, a first matching circuit, and a second matching circuit;
The first amplifier can amplify a first input signal having a first frequency to form a first output signal, and the second amplifier has a second frequency higher than the first frequency. An input signal can be amplified to form a second output signal;
The first matching circuit can supply the first input signal having the first frequency supplied from the external connection terminal to an input terminal of the first amplifier, and the second matching circuit can supply the external connection. A second input signal having the second frequency supplied from a terminal can be supplied to an input terminal of the second amplifier;
An external circuit capable of supplying the first input signal and the second input signal can be connected to the external connection terminal outside the semiconductor integrated circuit,
The first matching circuit includes at least a first reactance element, so that the input impedance of the first matching circuit to which the first input signal of the first frequency is supplied is the first output signal of the first frequency. Matching with the output impedance of the external circuit supplied to the external connection terminal is possible,
The second matching circuit includes at least a second reactance element, so that the input impedance of the second matching circuit to which the second input signal of the second frequency is supplied is the second output signal of the second frequency. Matching with the output impedance of the external circuit supplied to the external connection terminal is possible,
When the first amplifier is activated, the first amplifier amplifies the first input signal of the first frequency supplied from the external circuit via the external connection terminal and the first matching circuit. In some cases, the second amplifier is deactivated,
When the second amplifier is activated, the second amplifier amplifies the second input signal of the second frequency supplied from the external circuit via the external connection terminal and the second matching circuit. In some cases, the first amplifier is deactivated. The first reactance element of the first matching circuit is connected between the external connection terminal and the input terminal of the first amplifier, and the second reactance element of the second matching circuit is connected to the external connection terminal and the Connected to the input terminal of the second amplifier,
The first matching circuit and the second matching circuit share an input circuit connected to the external connection terminal, and the input circuit includes at least a third reactance element connected to the external connection terminal. 13. A semiconductor integrated circuit according to item 12.   The first reactance element of the first matching circuit and the second reactance element of the second matching circuit are inductors, and the third reactance element of the input circuit is a capacitor or an inductor. Semiconductor integrated circuit.   The semiconductor integrated circuit according to claim 13, wherein the third reactance element of the input circuit is controllable by a control signal. The first reactance element of the first matching circuit is connected to the input terminal of the first amplifier, and the second reactance element of the second matching circuit is connected to the input terminal of the second amplifier;
The first matching circuit includes a third reactance element connected between the input terminal of the first amplifier and the external connection terminal, and the second matching circuit includes the input terminal of the second amplifier and the external terminal. The semiconductor integrated circuit according to claim 12, further comprising a fourth reactance element connected between the connection terminal and the input circuit including a fifth reactance element connected to the external connection terminal.   The first reactance element of the first matching circuit and the second reactance element of the second matching circuit are inductors, and the third reactance element of the first matching circuit and the fourth reactance element of the second matching circuit. The semiconductor integrated circuit according to claim 16, wherein the reactance element is another inductor.   The first reactance element of the first matching circuit and the second reactance element of the second matching circuit are inductors, and the third reactance element of the first matching circuit and the fourth reactance element of the second matching circuit. The semiconductor integrated circuit according to claim 12, wherein the reactance element is a capacitor, and the fifth reactance of the input circuit is a capacitor or an inductor.   The first amplifier and the second amplifier are low noise amplifiers that respectively amplify the first input signal having the first frequency which is an RF frequency and the two input signals having the second frequency. A semiconductor integrated circuit according to 1.   The first amplifier and the second amplifier are low noise amplifiers that respectively amplify the first input signal having the first frequency which is an RF frequency and the two input signals having the second frequency. A semiconductor integrated circuit according to 1.   The first amplifier and the second amplifier, which are the low noise amplifiers, respectively amplify the first input signal and the second input signal received by an antenna of an RF receiver. Semiconductor integrated circuit.   21. The first amplifier and the second amplifier, which are the low noise amplifiers, respectively amplify the first input signal and the second input signal received by an antenna of an RF receiver. Semiconductor integrated circuit. Comprising an external input connection terminal, a first input amplifier, a second input amplifier, a first input matching circuit, and a second input matching circuit;
An external output connection terminal, a first output amplifier, a second output amplifier, a first output matching circuit, and a second output matching circuit (
The first input amplifier may amplify a first received input signal having a first input frequency to form a first received output signal, and the second input amplifier has a higher first input frequency than the first input frequency. A second received input signal having two input frequencies can be amplified to form a second received output signal;
The first input matching circuit can supply the first received input signal having the first input frequency supplied from the external input connection terminal to the input terminal of the first input amplifier, and the second input. The matching circuit can supply the second reception input signal having the second input frequency supplied from the external input connection terminal to the input terminal of the second input amplifier,
An external input circuit capable of supplying the first reception input signal and the second reception input signal can be connected to the external input connection terminal outside a semiconductor integrated circuit,
Since the first input matching circuit includes at least a first input reactance element, an input impedance of the first input matching circuit to which the first received input signal of the first input frequency is supplied is the first input frequency. Matching the output impedance of the external input circuit that supplies the first received output signal to the external input connection terminal,
Since the second input matching circuit includes at least a second input reactance element, the input impedance of the second input matching circuit to which the second received input signal of the second input frequency is supplied is the second input frequency. Matching the output impedance of the external input circuit that supplies the second received output signal to the external input connection terminal,
When the first input amplifier is activated, the first reception input signal of the first frequency supplied from the external input circuit via the first input matching circuit and the external input connection terminal is supplied to the first input amplifier. When one input amplifier amplifies, the second input amplifier is deactivated;
When the second input amplifier is activated, the second received input signal of the second frequency supplied from the external input circuit via the first input matching circuit and the external input connection terminal is changed to the first input amplifier. When the two-input amplifier amplifies, the first input amplifier is deactivated,
The first output amplifier can amplify a first transmission input signal having a first output frequency to form a second transmission output signal, and the second amplifier has a second higher than the first output frequency. A second transmission input signal having an output frequency can be amplified to form a second transmission output signal;
The first output matching circuit can supply the first transmission output signal supplied from the first output amplifier to the external output connection terminal, and the second output matching circuit is supplied from the second output amplifier. The supplied second transmission output signal can be supplied to the external output connection terminal.
An external output circuit capable of supplying the first transmission output signal and the second transmission output signal can be connected to the external output connection terminal outside the semiconductor integrated circuit,
Since the first output matching circuit includes at least a first output reactance element, an output impedance of the first output matching circuit that supplies the first transmission output signal of the first output frequency to the external output connection terminal is as follows: Matching with the input impedance of the external output circuit to which the first transmission output signal of the first output frequency is supplied is possible,
The second output matching circuit includes at least a second output reactance element, whereby the output impedance of the second output matching circuit that supplies the second transmission output signal of the second output frequency to the external output connection terminal is: Matching with the input impedance of the external output circuit to which the second transmission output signal of the second output frequency is supplied is possible,
When the first output amplifier is activated, the first output amplifier transmits the first transmission output signal having the first output frequency to the external output via the first output matching circuit and the external output connection terminal. When supplying the circuit, the second output amplifier is deactivated;
When the second output amplifier is activated, the second output amplifier transmits the second transmission output signal of the second output frequency to the external output via the second output matching circuit and the external output connection terminal. A semiconductor integrated circuit in which the first output amplifier is deactivated when supplied to a circuit. The first input reactance element of the first input matching circuit is connected between the external input connection terminal and the input terminal of the first input amplifier, and the second input reactance element of the second input matching circuit is An input circuit connected between the external input connection terminal and the input terminal of the second input amplifier, wherein the first input matching circuit and the second input matching circuit are connected to the external input connection terminal. The input circuit includes at least a third input reactance element connected to the external input connection terminal,
The first output reactance element of the first output matching circuit is connected between an output terminal of the first output amplifier and the external output connection terminal, and the second output reactance element of the second output matching circuit is The second output amplifier is connected between an output terminal and the external output connection terminal, and the first output matching circuit and the second output matching circuit are connected to the external output connection terminal. 24. The semiconductor integrated circuit according to claim 23, wherein the output circuit includes at least a third output reactance element connected to the external output connection terminal. The first input reactance element of the first input matching circuit is connected to the input terminal of the first input amplifier, and the second input reactance element of the second input matching circuit is the input terminal of the second input amplifier. The first input matching circuit includes a third input reactance element connected between the input terminal of the first input amplifier and the external input connection terminal, and the second input matching circuit includes: A fourth input reactance element connected between the input terminal of the second input amplifier and the external input connection terminal;
The first output reactance element of the first output matching circuit is connected to an output terminal of the first output amplifier, and the second output reactance element of the second output matching circuit is connected to an output terminal of the second output amplifier. The first output matching circuit includes a third output reactance element connected between the output terminal of the first output amplifier and the external output connection terminal, and the second output matching circuit includes the first output matching circuit. 24. The semiconductor integrated circuit according to claim 23, further comprising a fourth output reactance element connected between the output terminal of the two-output amplifier and the external output connection terminal.

Images