JP2009302244A - Semiconductor laser device and method of mounting the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser device which is incorporated with optical pickup device having an excellent productivity, has a sufficient heat dissipation effect, and prevents a semiconductor device chip and a light emitting device from being thermal-deteriorated. <P>SOLUTION: The semiconductor laser device includes: a rectangular plate shaped mounting part 1 for mounting a semiconductor laser chip 5 as a light emitting device; a plate-like first lead 4a extending in parallel with respect to one side of the mounting part 1; and a second lead 4b extending in parallel with respect to the first lead 4a. The mounting part 1, the first lead 4a and the second lead 4b are formed with a frame-like resin part 2 as a holding member composed of insulation resin for integrally holding them by integral molding. Backsides of the mounting part 1, the first lead 4a and the second lead 4b includes a part of surface which are configured so that at least part of these backsides are flush with each other. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a semiconductor laser device and a mounting method thereof, and more specifically, to an optical pickup device that can read, write, or erase information recorded on an optical recording medium or a magneto-optical recording medium. The present invention relates to a semiconductor laser device that can be used and a method for mounting such a semiconductor laser device.

  A semiconductor laser device is used as a basic component of an optical pickup device capable of reading, writing, or erasing information recorded on an optical recording medium such as a CD or a DVD or a magneto-optical recording medium. Since such a semiconductor laser device is a basic component of an optical pickup device, its performance greatly affects the performance of the optical pickup device.

  One such semiconductor laser device is a frame type semiconductor laser device. The frame type laser device is formed of a package in which a metal lead frame serving as a lead terminal and a plurality of leads serving as electrodes are integrally formed of resin as disclosed in Patent Document 1, for example. A semiconductor laser element is mounted on the lead frame, and the semiconductor laser element and the electrode lead are electrically connected by a wire.

  As a frame type light emitting device, for example, as disclosed in Patent Document 2, a light emitting element, a mounting lead frame for mounting the light emitting element, and a connection connected to the light emitting element via a lead There is a light-emitting device that includes a lead frame for use and a molded body that covers most of each lead frame.

JP 2005-116699 A Japanese Patent Laid-Open No. 11-87780

  In the conventional frame type semiconductor laser device as described above, since it is necessary to solder the leads when mounted, the productivity of the optical pickup device configured by incorporating such a semiconductor laser device is poor. Moreover, it cannot be said that the heat dissipation effect is sufficient, and therefore the thermal conductivity to the optical pickup device is not good. When the semiconductor laser chip to be mounted is of a high output type mainly used for recording, it is necessary to apply a large current, but if a large current is applied, heat cannot be released well, and the semiconductor laser There is a concern that the chip deteriorates due to heat. Furthermore, when the external temperature of the semiconductor laser device is relatively high, the performance of the semiconductor laser device may be degraded.

  Similarly, in the conventional frame type light emitting device as described above, the heat from directly below the light emitting element is transmitted to the lead and is discharged from there, but the area of the heat radiation portion is relatively small, It is difficult to pass a large current through the light emitting element.

  An object of the present invention is to prevent the possibility that the semiconductor laser chip and the light emitting element are deteriorated by heat, while the productivity of the optical pickup device configured by incorporating the semiconductor laser device is good and the heat dissipation effect is sufficient. It is an object of the present invention to provide a semiconductor laser device that can be used.

  According to one aspect of the present invention, a rectangular plate-shaped mounting portion for mounting a semiconductor laser chip, and a strip-shaped first lead provided to extend parallel to one side of the mounting portion, The belt-shaped second lead provided so as to extend parallel to the first lead, and an insulating material for integrally holding the mounting portion, the first lead, and the second lead. And a rear surface of the mounting portion, a rear surface of the first lead, and a rear surface of the second lead, and a part of the surface configured such that at least a part of the rear surfaces are flush with each other. There is further provided a semiconductor laser device characterized by comprising:

  According to another aspect of the present invention, a rectangular plate-shaped mounting portion for mounting a semiconductor laser chip, and two rectangular plate-shaped mounting portions provided so as to extend parallel to one side of the mounting portion. A lead portion and a holding portion made of an insulating material for holding the mounting portion and the two lead portions together, and the back surface of the mounting portion and the back surfaces of the two leads are the back surfaces thereof. There is further provided a semiconductor laser device, characterized in that the semiconductor laser device further comprises a part of a surface configured such that at least a part of each is flush with each other.

  According to still another aspect of the present invention, a step of providing a semiconductor laser device according to the above one aspect of the present invention or another aspect of the present invention, a step of providing a substrate for mounting the semiconductor laser device, and the semiconductor laser There is provided a method for mounting a semiconductor laser device, comprising the steps of placing the device on the substrate and soldering the semiconductor laser device to the substrate.

  According to the present invention, since it is possible to mount on a substrate or FPC (flexible printed wiring board) by reflowing on the back surface or chip mounter instead of the soldering work on the lead end, the productivity of the optical pickup device is achieved. Leads to improvement.

  Further, according to the present invention, since the lead is provided, it is possible to divert the existing equipment in the manufacture of the semiconductor laser device. When this semiconductor laser device is incorporated into an optical pickup device, it is easy to mount on a substrate or FPC by cutting the lead or adopting a structure having no lead.

  Furthermore, according to the present invention, the heat radiation portion that is the mounting portion of the semiconductor laser chip is provided immediately below the semiconductor laser chip, so that the area of the heat radiation portion that radiates heat from the back surface in addition to the lead portion is widened. It is possible to efficiently release heat to the outside such as an LD holder or a substrate. At this time, since the mounting portion which is a heat radiating portion is electrically neutral, it is possible to separately attach a heat radiating member to the mounting portion.

  Several embodiments of the present invention will be described below with reference to the drawings. Note that the present invention is not limited to these embodiments.

[Embodiment 1]
A semiconductor laser device according to Embodiment 1 of the present invention will be described with reference to FIGS. FIG. 1 is a top view of the semiconductor laser device according to the first embodiment, and FIG. 2 is a bottom view thereof.

  The semiconductor laser device according to the first embodiment includes a rectangular plate-shaped mounting portion 1 for mounting a semiconductor laser chip (hereinafter referred to as “laser chip”) 5 as a light emitting element, and one side of the mounting portion 1. And a strip-shaped first lead 4a extending in parallel and a second lead 4b extending parallel to the first lead 4a. The mounting portion 1, the first lead 4a and the second lead 4b are formed by integral molding together with the frame-shaped resin portion 2 as a holding portion made of an insulating material (resin) for holding them together.

  A submount 6 is mounted on the mounting portion 1, and a laser chip 5 is mounted on the submount 6. Conductivity is achieved by bonding wires 3a between the laser chip 5 and the first lead 4a. Conductivity is achieved by bonding wires 3b between the submount 6 and the second lead 4b. The combination of the wirings of the first lead 4a, the second lead 4b, the laser chip 5 and the wires 3a and 3b of the submount 6 is not limited to the above, and may be the reverse of the above.

  In this semiconductor laser device, the back surface of the mounting portion 1, the back surface of the first lead 4a, and the back surface of the second lead 4b are part of a surface configured such that at least some of the back surfaces are flush with each other (illustrated). Abbreviation).

  A current is supplied to the laser chip 5 by flowing a current between the first lead 4a and the second lead 4b. The laser chip 5 emits light in a state where a current of a certain value or more is supplied. Heat generated when the laser chip 5 emits light is released from the mounting portion 1 to the outside through the submount 6.

  The first lead 4a and the mounting portion 1 are insulated by one linear resin portion 2a. The second lead 4b and the mounting portion 1 are insulated by the other linear resin portion 2b. Here, when the upper surface and the bottom surface of the submount 6 are made of an insulating material, the mounting portion 1 is electrically neutralized by the resin portions 2a and 2b, and noise during connection or adhesion to an external heat sink or the like. Can be ignored.

  As described above, the semiconductor laser device according to the first embodiment includes a rectangular plate-shaped mounting portion 1 for mounting the laser chip 5 and a band provided so as to extend parallel to one side of the mounting portion 1. The plate-like first lead 4a, the strip-like second lead 4b provided so as to extend in parallel to the first lead 4a, the mounting portion 1, the first lead 4a, and the second lead 4b are integrated. And a holding portion made of an insulating material for holding. The back surface of the mounting portion 1, the back surface of the first lead 4a, and the back surface of the second lead 4b further include a portion of the surface configured such that at least some of the back surfaces are flush with each other.

  Therefore, according to the semiconductor laser device according to the first embodiment, it is possible to mount on the substrate or the FPC by reflow or chip mounter on the back surface instead of the soldering work to the lead end. Leading to improved productivity.

  In addition, since the lead is provided, it is possible to divert the existing equipment in the manufacture of the semiconductor laser device.

  Furthermore, the heat radiation part is provided so that the laser chip 5 is directly under the laser chip 5 mounting portion, and the area of the heat radiation part radiating from the back surface in addition to the lead part is widened. Heat can be efficiently released to the outside such as a substrate. At this time, since the mounting portion 1 which is a heat radiating portion is electrically neutral, a heat radiating member can be separately attached to the mounting portion 1.

[Embodiment 2]
A semiconductor laser device according to the second embodiment of the present invention will be described with reference to FIGS. FIG. 3 is a top view of the semiconductor laser device according to the second embodiment, and FIG. 4 is a bottom view thereof.

  The structure of this semiconductor laser device is a structure in which the first lead 4a and the second lead 4b of the first embodiment are respectively replaced with two first lead 4c and second lead 4d as rectangular lead portions. That is, when the first lead 4a and the second lead 4b of the first embodiment are cut outside the resin portions 2a and 2b, or when no lead is provided from the beginning, as shown in FIGS. A simple structure.

  Therefore, according to the semiconductor laser device according to the second embodiment, in addition to the above effects produced by the semiconductor laser device according to the first embodiment, a structure in which the lead is cut or does not have the lead is adopted. This facilitates the mounting and mounting of the semiconductor laser device on the substrate or FPC.

[Embodiment 3]
A semiconductor laser device according to Embodiment 3 of the present invention will be described with reference to FIG. FIG. 5 is a side sectional view taken along line AA in FIG.

  The first lead 4 a and the second lead 4 b have a structure in which the respective intermediate portions are bent stepwise inside the resin portion 2 and one lead end portion protrudes to the outside of the resin portion 2. That is, each of the first lead 4a and the second lead 4b has a part of the surface and a bent part bent at an obtuse angle with respect to the part of the surface inside the resin part 2 as the holding part, and the resin part 2 has a lead end portion that protrudes outwardly from the bent portion, and is integrated with the resin portion 2 by an insulating resin inside the resin portion 2.

  Here, the bent structure of the intermediate portion of the leads 4a and 4b inside the resin portion 2 may not be the same as that shown in FIG.

  According to the semiconductor laser device according to the third embodiment, the intermediate portions of the leads 4a and 4b are bent inside the resin portion 2, so that the strength against external pulling is increased.

[Embodiment 4]
A semiconductor laser device according to Embodiment 4 of the present invention will be described with reference to FIG. FIG. 6 is a side sectional view taken along line BB in FIG.

  In this semiconductor laser device, two lead portions 4c and 4d are bent inside the resin portion 2 in the mounting portion 1 or in a portion parallel to the mounting portion 1, and the lead end of the resin portion 2 is the lead end. It has a structure that protrudes outward. That is, each of the two lead parts 4c and 4d has a part of the surface and a bent part bent perpendicularly to the part of the surface inside the resin part 2 as the holding part. It is integrated with the resin part 2 by an insulating resin inside,

  The bent structure here is bent 90 degrees in FIG. 6, but it does not have to be the same angle as this.

  According to the semiconductor laser device according to the fourth embodiment, the two lead portions 4c and 4d are bent inside the resin portion 2, so that the strength against external pulling is increased.

[Embodiment 5]
A semiconductor laser device according to a fifth embodiment of the present invention will be described with reference to FIGS. FIG. 7 is a top view showing a state without a cap of the semiconductor laser device according to the fifth embodiment. FIG. 8 is a top view showing the cap state.

  In FIG. 7, resin portions 2 c and 2 d are portions that support a cap 7 for protecting the laser chip 5, and the height thereof is lower than the surrounding frame-shaped resin portion 2. As shown in FIG. 8, a detachable cap 7 that covers the laser chip 5 and the mounting portion 1 is attached to the resin portions 2c and 2d.

  The resin portions 2 c and 2 d do not necessarily have the shape shown in FIG. 7, and there is no problem as long as the laser chip 5 is not crushed by the cap 7.

  In the semiconductor laser device according to the fifth embodiment, since the cap 7 is provided, it becomes strong against damage to the laser chip 5 due to external force or the disconnection of the wires 3a and 3b, and so on. Even during soldering, the laser chip 5 and the wires 3a and 3b are protected.

[Embodiment 6]
A semiconductor laser device according to the sixth embodiment of the present invention will be described with reference to FIGS. FIG. 9 is a top view showing a state without a cap of the semiconductor laser device according to the sixth embodiment. FIG. 10 is a top view showing the state with the cap.

  As shown in FIGS. 9 and 10, this semiconductor laser device has a rectangular gap 20 as a notch for removing the cap 7a in the resin part 2e on the right side. The cap 7a has a rectangular protruding portion 30 corresponding to the gap 20 of the resin portion 2e. In this semiconductor laser device, the cap 7a can be easily removed from the resin portion 2e by using the gap 20 of the resin portion 2e to put a finger or the like on the overhang portion 30 of the cap 7a and pulling the overhang portion 30 up. it can.

  In the semiconductor laser device in which the gap 20 and the overhanging portion 30 are not provided, there is a risk of damaging the laser chip, the wire, etc. when the cap is removed, but according to the semiconductor laser device according to the sixth embodiment, There is no such fear. Also, by providing the gap 20 in the resin portion 2e, it is possible to expect the air cooling effect of the semiconductor laser device. That is, it can be assumed that the laser chip 5 is cooled by convection of air inside the optical pickup device and the drive.

  In the semiconductor laser device according to the sixth embodiment, the gap 20 of the resin portion 2e is not limited to the position shown in FIG. 9, and there is no or little possibility that the laser chip 5 and the wires 3a and 3b are damaged. So long as it doesn't matter. Further, such a gap 20 may be provided at a plurality of locations. Further, the shape of the gap 20 is not particularly limited.

[Embodiment 7]
A semiconductor laser device according to a seventh embodiment of the present invention will be described with reference to FIGS. FIG. 11 is a top view of the semiconductor laser device according to the seventh embodiment, and FIG. 12 is a bottom view thereof.

  As shown in FIGS. 11 and 12, a submount is mounted on the mounting portion 1a, which also serves as the first lead. The submount and the mounting portion 1a have conductivity through the wires 3a and 3b, but the wires 3a and 3b are not necessarily required if the submount is made of a conductive material. Although it is assumed that the mounting portion 1a is mainly used as a ground terminal, it may be used as an LD terminal. In FIGS. 11 and 12, the mounting portion and the first lead are common, but the mounting portion may be common to the second lead.

  According to the structure of the semiconductor laser device according to the seventh embodiment, the mounting portion 1a is not electrically neutral, but serves as a terminal that contributes to the light emission of the laser chip 5, so care must be taken in contact with the external heat sink. However, it is possible to expect an effect that the area of the back surface can be increased and the heat dissipation is improved.

[Embodiment 8]
A semiconductor laser device according to the eighth embodiment of the present invention will be described with reference to FIG. FIG. 13 is a sectional view of a semiconductor laser according to the eighth embodiment.

  FIG. 13 is a sectional view seen from the lead side. The bottom surface of the mounting portion 1b is not flush with the two leads.

  As shown in FIG. 13, according to the semiconductor laser device according to the eighth embodiment of the present invention, the mounting portion 1 b protrudes, thereby increasing the heat capacity of the mounting portion 1 b and increasing the heat dissipation to the outside. Can be improved.

[Embodiment 9]
A semiconductor laser device according to the ninth embodiment of the present invention will be described with reference to FIGS. FIG. 14 is a top view of the semiconductor laser device according to the ninth embodiment, and FIG. 15 is a bottom view thereof. FIG. 16 is a top view showing one form of a substrate in this semiconductor laser device.

  In FIG. 14, 8 is a part of the substrate or FPC, and 8a, 8b and 8c are parts where the internal wiring is exposed to the outside. The internal wiring is mainly composed of a copper material. For example, the 8a portion is the lead portion 4c in FIG. 4, the 8b portion is the mounting portion 1 in FIG. 4, and the 8c portion is the lead portion 4d in FIG. Each can be mounted with solder.

  At this time, the 8b portion is electrically neutral, and the wiring extending from the 8a portion and the 8b portion is connected to a drive IC of the optical pickup device and plays a role of supplying a current to the mounted laser chip.

  As shown in FIG. 15, the wiring is not exposed to the outside from the back surface in the 8a portion and the 8c portion, but the wiring is also exposed from the back surface in the 8b portion. Therefore, it can be soldered from the back surface to an external heat radiating plate or the like, and can be mounted in close contact. Further, since the 8a portion and the 8c portion are not exposed to the outside from the back surface, the heat sink and the like that are in contact with the 8b portion can be insulated.

  In FIG. 16, the 8a portion and the 8c portion are the same as in FIG. 14, but the 8b portion has an extraction structure. Therefore, for example, when a semiconductor laser device having a shape as shown in FIG. 13 is mounted, the convex mounting portion 1b can penetrate through the 8b portion, and soldering or the like to the heat sink that can be disposed below it. It is possible to mount in close contact.

[Embodiment 10]
A semiconductor laser device according to the tenth embodiment of the present invention will be described with reference to FIG. FIG. 17 is a cross-sectional view showing an aspect of the LD holder in the semiconductor laser device according to the tenth embodiment.

  In FIG. 17, the semiconductor laser device 10 is joined to a substrate (or FPC) 8 by soldering. Further, the substrate 8 and a drive IC or an external power source inside the optical pickup device (not shown) are electrically connected. The semiconductor laser device 10 emits light by the current supplied from the drive IC or the external power source.

  Since the semiconductor laser device 10 is bonded to the LD holder 9 in the mounting portion 1b, the heat emitted from the laser chip can be conducted to the LD holder 9 directly below. The LD holder 9 is further in contact with a housing or the like inside the optical pickup device. Therefore, the heat generated from the laser chip is conducted to a component having a larger heat capacity and is radiated.

  Here, the LD holder 9 has a cylindrical shape, which is to facilitate optical adjustment when it is incorporated into the optical pickup device. However, the shape of the LD holder 9 which is an external heat dissipation component is not particularly limited. The mounting method may be any method as long as the LD holder 9 is disposed on the mounting portion 1 b of the semiconductor laser device 10.

  In the semiconductor laser device according to the tenth embodiment, the heat radiation portion is provided so that the portion directly below the laser chip becomes the mounting portion 1b, and the area of the heat radiation portion from the back surface in addition to the lead portion is wide. Therefore, heat can be efficiently released to the outside such as the LD holder 9 and the substrate. At this time, since the mounting portion 1b which is a heat radiating portion is electrically neutral, a heat radiating member can be separately attached to the mounting portion 1b.

FIG. 1 is a top view showing a semiconductor laser device according to a first embodiment of the present invention. FIG. 2 is a bottom view showing the first embodiment of the semiconductor laser device according to the present invention. FIG. 3 is a top view showing a semiconductor laser device according to a second embodiment of the present invention. FIG. 4 is a bottom view showing the second embodiment of the semiconductor laser device according to the present invention. FIG. 5 is a side cross-sectional view taken along the line AA of FIG. 2, showing a third embodiment of the semiconductor laser device according to the present invention. FIG. 6 is a side sectional view taken along line BB in FIG. 4 showing a semiconductor laser device according to a fourth embodiment of the present invention. FIG. 7 is a top view showing a semiconductor laser device according to a fifth embodiment (without a cap) of the present invention. FIG. 8 is a top view showing a semiconductor laser device according to a fifth embodiment (with a cap) of the present invention. FIG. 9 is a top view showing a sixth embodiment (without a cap) of a semiconductor laser device according to the present invention. FIG. 10 is a top view showing a sixth embodiment (with a cap) of a semiconductor laser device according to the present invention. FIG. 11 is a top view showing a semiconductor laser device according to a seventh embodiment of the present invention. FIG. 12 is a bottom view showing a semiconductor laser device according to a seventh embodiment of the present invention. FIG. 13 is a sectional view showing an eighth embodiment of the semiconductor laser apparatus according to the present invention. FIG. 14 is a top view showing a ninth embodiment of the semiconductor laser apparatus according to the present invention. FIG. 15 is a bottom view showing the ninth embodiment of the semiconductor laser apparatus according to the present invention. FIG. 16 is a top view showing one mode of the substrate in the ninth embodiment of the semiconductor laser apparatus according to the present invention. FIG. 17 is a sectional view showing an aspect of an LD holder in a semiconductor laser device according to a tenth embodiment of the present invention.

Explanation of symbols

1, 1 a, 1 b... Mounting part 2, 2 a, 2 b, 2 c, 2 d, 2 e... Resin part (holding part), part of resin part 3 a, 3 b... Au wire wire 4 a, 4 b, 4 c, 4 d. Lead, lead portion 5 ... Semiconductor laser chip 6 ... Submount 7, 7a ... Cap 8, 8a, 8b, 8c ... Substrate, FPC
9 …… LD holder 10 …… Semiconductor laser device

Claims (11)

  A rectangular plate-shaped mounting portion for mounting the semiconductor laser chip, a strip-shaped first lead provided so as to extend parallel to one side of the mounting portion, and parallel to the first lead A strip-shaped second lead provided to extend; and a mounting portion made of an insulating material for integrally holding the mounting portion, the first lead, and the second lead. The back surface of the first portion, the back surface of the first lead, and the back surface of the second lead further include a portion of the surface configured such that at least a part of the back surfaces are flush with each other. Semiconductor laser device.   2. The semiconductor laser device according to claim 1, wherein the first lead and the second lead are provided without protruding outward from the holding portion.   Each of the first lead and the second lead has a part of the surface inside the holding part and a bent part bent at an obtuse angle with respect to the part of the surface, and the outside of the holding part, 2. The semiconductor laser device according to claim 1, wherein the semiconductor laser device has a lead end portion that continues to the bent portion and protrudes outward, and is integrated with the holding portion by an insulating resin inside the holding portion.   A rectangular plate-shaped mounting portion for mounting the semiconductor laser chip, two rectangular plate-shaped lead portions provided so as to extend parallel to one side of the mounting portion, the mounting portion, and the 2 A holding portion made of an insulating material for holding the two lead portions together, and the back surface of the mounting portion and the back surfaces of the two leads are at least partially flush with each other. A semiconductor laser device, further comprising a portion of a surface configured to be.   Each of the two lead parts has a part of the surface and a bent part bent perpendicularly to the part of the surface inside the holding part, and the holding part is held by an insulating resin inside the holding part. The semiconductor laser device according to claim 4, wherein the semiconductor laser device is integrated with the part.   The semiconductor laser device according to claim 1, wherein a detachable cap that covers the semiconductor laser chip and the mounting portion is attached to the holding portion.   The semiconductor laser device according to claim 6, wherein the holding portion is provided with a notch for removing the cap.   The semiconductor laser device according to claim 1, wherein the mounting portion and the first lead and the second lead or the two lead portions are shared.   The semiconductor laser device according to claim 1, wherein a convex portion protruding from a part of the surface is provided on a back surface of the mounting portion.   A step of providing the semiconductor laser device according to any one of claims 1 to 9, a step of providing a substrate for mounting the semiconductor laser device, a step of placing the semiconductor laser device on the substrate, And a step of soldering the semiconductor laser device to the substrate.   The method for mounting a semiconductor laser device according to claim 10, further comprising a step of bonding the substrate to a semiconductor laser holder for heat dissipation.

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