JP2009295734A - Apparatus and method for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device that removes the silicon residue of an Al alloy film, simplifies manufacturing processes, and reduces manufacture costs. <P>SOLUTION: The method includes: a step of forming a silicon-containing Al alloy film 3 on a silicon substrate 1; a step of providing a resist pattern 4 on the Al alloy film 3; a step of etching the Al alloy film 3 using the resist patter 4 as a mask; a step of washing after etching; and a step of removing a silicon residue 5 using a two-fluid nozzle 6. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a semiconductor device having an Al alloy film wiring containing silicon. In particular, the present invention relates to a semiconductor device manufacturing method capable of removing silicon residue in an Al alloy film when forming an Al alloy film wiring containing silicon, and a semiconductor device manufacturing apparatus that executes this manufacturing method.

  In a conventional semiconductor device using a silicon substrate, a wiring metal is connected to the silicon semiconductor substrate at a contact hole portion, and Al is often used as a wiring material. In order to improve the ohmic characteristics of the contact using the Al wiring, it is necessary to perform a heat treatment at 400 to 500 ° C. on the silicon semiconductor substrate after the Al wiring is formed. During this heat treatment, silicon on the silicon semiconductor substrate diffuses into Al, and Al diffuses after the silicon is removed, thereby forming an alloy spike. This alloy spike causes a junction short circuit and an increase in leakage current, and degrades the performance of the semiconductor device.

  As a countermeasure against this problem, a method is known in which an Al alloy in which several weight percent of silicon is added to Al is used as a wiring material. The amount of silicon that dissolves into Al is determined by the solid solubility of silicon in Al at the heat treatment temperature after Al wiring formation. Therefore, the addition of silicon to Al in advance prevents the occurrence of alloy spikes. Can be prevented.

  As a method for forming the Al wiring, wet etching using an etching solution containing phosphoric acid and dry etching using a chlorine-based gas are used. However, when an Al alloy containing silicon is etched by the above method, silicon contained in the Al alloy remains between Al wirings. As a result, problems such as an increase in leakage current and deterioration of breakdown voltage between wirings occur as described above.

  As a method for removing the residual silicon, in the case of dry etching, after etching Al with a chlorine-based gas for etching the Al alloy, the silicon residue is removed by over-etching with the same gas, and an Al alloy film There is a method of etching a silicon residue using a fluorine-based gas instead of the etching gas.

  As in Patent Document 3, in the etching process of Al or Al alloy using chlorine-based gas and fluorine gas, ionic etching conditions and radical etching conditions are alternately used while removing silicon residues. A method of performing etching is disclosed.

  Further, as in Patent Document 4, after etching the Al—Si alloy film with a chlorine-based gas using a plasma etching apparatus with a resist film as a mask, the remaining silicon residue is further removed with a fluorine-based gas. A method for etching is disclosed.

For example, in the dry etching apparatus shown in FIG. 7, the upper electrode 22 and the lower electrode 23 are arranged facing each other in the reaction chamber 30, and a high frequency power source 24 is connected to the upper electrode 22. A reaction gas such as SF ₆ or CF ₄ / O ₂ is supplied to the reaction chamber 30 from the reaction gas supply port 20. By connecting the exhaust port 21 of the reaction chamber 30 to a vacuum system and exhausting, the pressure in the reaction chamber 30 is set to several hundred mTorr. In this state, the silicon residue is etched by supplying high frequency power to the upper electrode 22 and the lower electrode 23 to generate plasma 25.

  In the case of wet etching, there are a method of etching a silicon residue with an alkali solution and a method of etching a silicon residue with a solution containing hydrofluoric acid and nitric acid.

  As in Patent Document 1, an Al-Si film is repeatedly etched with nitric acid on the surface of silicon and etching of the silicon oxide film with hydrofluoric acid using an etchant composed of phosphoric acid, nitric acid, acetic acid and ammonium fluoride. A method of performing and removing silicon residues is disclosed.

  Further, as disclosed in Patent Document 2, a method is disclosed in which an organic reaction film generated in an Al film etching process is removed by an alkaline aqueous solution treatment, and a silicon residue is removed in a subsequent CDE process.

  For example, a chemical solution for etching the silicon substrate is placed in a batch-type dip tank 31 shown in FIG. By immersing a large number of substrates 26 to be processed loaded in the wafer holder 32 in a silicon residue etching solution 27, wet etching of silicon residues is performed.

In Patent Document 5, the silicon residue removing liquid is applied to the upper surface of the wafer after the silicon residue removing liquid is supplied to (or supplied to) the upper surface so that the surface on which the silicon residue is to be removed faces upward. A method of removing silicon residues by circulating along the upper surface is disclosed.
JP 62-125633 A (released on June 6, 1987) JP-A-62-136885 (published on June 19, 1987) Japanese Patent Laid-Open No. 5-3180 (published January 8, 1993) Japanese Patent Laid-Open No. 5-136129 (published on June 1, 1993) JP 2002-100603 A (published on April 5, 2002)

  However, in the conventional method using dry etching, the uniformity of the etching rate is not good, and in particular, there is a problem that silicon residue remains in the step portion of the recess and cannot be completely removed. Further, an expensive etching apparatus such as a plasma etching apparatus is required.

  Further, in the method using wet etching, since an acid / alkali is used to etch the silicon residue, there arises a problem that the Al wiring itself is also etched by the reaction activity.

  Furthermore, even if any of the above methods is used, the etching selectivity to the silicon substrate and the base film, which is the base film of the Al wiring, for example, the silicon substrate and the base film is low. As a result, there arises a problem that holes are formed in the silicon substrate and the base film.

  The present invention has been made in view of the above-mentioned problems, and the object of the present invention is to shorten the silicon residue without excessively etching the Al alloy wiring, and further without etching the substrate and the base film. A semiconductor device manufacturing method that can be easily removed in time, and a semiconductor device manufacturing device that uses this manufacturing method to remove silicon residues without using an expensive manufacturing device and without affecting the underlying film. Objective.

  In order to achieve the above object, a method of manufacturing a semiconductor device according to the present invention includes a step of forming an Al alloy film containing silicon on a substrate, a step of providing a resist pattern on the Al alloy film, and the resist Etching the Al alloy film using a pattern as a mask, cleaning the substrate after the etching, and cleaning the substrate after the etching, the silicon residue generated in the Al alloy film etching step by a two-fluid nozzle It includes a step of removing.

  According to the above manufacturing method, after etching an Al alloy film containing silicon, a gas is pressurized, droplets are mixed into the accelerated gas, and the accelerated droplets collide with the gas and collide with the substrate. The silicon residue can be removed by a two-fluid nozzle that removes the silicon residue by a jet liquid flow.

  In the above manufacturing method, it is preferable to form a base film having a contact hole on the substrate before forming the Al alloy film. Therefore, what is discharged from the two-fluid nozzle is one that dissolves the Al alloy film, the silicon residue, the base film of the Al alloy film, a mixture of liquid and gas that does not etch the substrate, and a resist pattern. Is preferably selected. As a result, when the silicon residue is removed by the two-fluid nozzle, the Al alloy film and the base film are not affected, and the silicon residue can be removed and the resist pattern that is no longer needed can be removed.

  In the above manufacturing method, it is preferable that the substrate is spin-rotated during the cleaning step using the two-fluid nozzle. As a result, the liquid from the two-fluid nozzle flows outward due to the centrifugal force of rotation, and reattachment of the removed silicon residue can be prevented.

  In the above manufacturing method, it is preferable that the two-fluid nozzle is swung in a direction portion toward the spin rotation center line of the substrate and in a direction toward the peripheral edge side of the spin rotation. Thereby, the removal efficiency of a silicon residue can be improved.

  Further, after completion of the two-fluid nozzle cleaning, the substrate can be dried by the centrifugal force by rotating the substrate at a high speed.

  And this invention provides the manufacturing apparatus which manufactures a semiconductor device by performing the manufacturing method including the said process, and according to the said apparatus, after etching a board | substrate, a silicon residue is easily made in a short time with a 2 fluid nozzle. Can be removed.

  Furthermore, in the manufacturing apparatus, it is preferable to install a plurality of two-fluid nozzles in the rotating radial direction. As a result, a higher cleaning effect can be achieved.

  The semiconductor device manufacturing apparatus and the manufacturing method thereof according to the present invention, as described above, form an Al alloy film containing silicon on a substrate, provide a resist pattern thereon, and use the resist pattern as a mask. After etching the Al alloy film, the silicon residue can be removed by the two-fluid nozzle. In other words, after etching the Al alloy film containing silicon, the gas in it is pressurized using a two-fluid nozzle, droplets are mixed into the accelerated gas, and the droplets accelerated together with the gas are applied to the substrate. The silicon residue can be removed by the shock wave and the jet liquid flow generated at the time of collision. As a result, the removal effect can be easily achieved in a short time.

  Further, since the gas and liquid used in the two-fluid nozzle are gas and liquid that do not etch the Al alloy film, silicon, and base film, silicon residues can be removed without affecting the base film.

  Further, the manufacturing process can be simplified and the manufacturing cost can be reduced as compared with the case where the silicon residue is removed by an expensive dry etching method using a conventional manufacturing apparatus or a chemical solution that etches Al wiring or the base.

  Hereinafter, a semiconductor device manufacturing method of the present invention, in particular, a method for removing silicon residues during a manufacturing process, and a semiconductor device manufacturing apparatus for removing silicon residues by performing the semiconductor device manufacturing method will be described in detail. The substrate may be resistant to etching Al alloys such as silicon, silicon oxide film, glass and metal oxide films such as titanium dioxide, and the base film may be silicon, metal oxide film and glass, for example. In the following, the substrate and the base film will be described by taking the substrate and the base film containing silicon which is the same component as the silicon residue as a representative.

  A method for manufacturing a semiconductor device according to the present invention will be described in detail.

  First, a silicon oxide film (underlying film) is formed on a substrate to form contact holes. Here, the thickness of the silicon oxide film is, for example, about 5 nm to 300 nm, preferably about 5 nm to 100 nm. The method of film formation is not particularly limited. For example, by plasma chemical vapor deposition (plasma CVD), TEOS gas and oxygen gas are mixed in a vacuum chamber, and plasma discharge is performed at a temperature of about 320 ° C. Can be formed. In addition to the above methods, oxide film forming methods such as a sputter deposition method in which an oxide is formed by sputter deposition, a plasma oxidation method in which a substrate surface is oxidized in plasma, and an anodic oxidation method are well known. According to this method, for example, a silicon oxide film having a thickness of about 100 nm can be obtained. Leakage current can be suppressed by making the thickness of the silicon oxide film appropriate.

  Next, an Al alloy film containing 0.1 to 3% by weight of silicon is formed on the silicon oxide film by a sputtering method or the like.

  Next, a resist pattern is provided on the Al alloy film. The method for forming a resist pattern in the present invention is not particularly limited. A known method of applying a resist to a substrate and forming a resist pattern by exposure and phenomenon processing can be used. For example, a method such as photolithography, photolithography, electron beam lithography, or X-ray lithography is used. be able to. There is no restriction | limiting in particular also about the material of a resist, Any material which can form a resist is included. Therefore, various known photosensitive agents, resins, solvents and the like that constitute the resist can be used as the resist material. The resist pattern thus formed is used for partial protection as a mask for etching an Al alloy film as described later.

Next, the Al alloy film not covered with the resist pattern is etched. The etching method in the present invention is not particularly limited, and a dry etching method and a wet etching method can be employed. For example, dry etching is performed using photolithography and Cl ₂ gas, or wet etching is performed using an etching solution containing phosphoric acid, and patterning is performed along the shape of the resist pattern. Furthermore, isotropic or anisotropic etching can be adjusted according to the type of silicon substrate and the type of etching solution for etching. The gas or etching solution used for the etching is not particularly limited, and any gas that can be used in related fields such as semiconductor manufacturing technology is selected. After this etching step, the Al alloy film containing silicon is partially etched to leave a silicon residue on the silicon oxide film.

  In the case of using the etching method, a chemical solution is used as an etching solution, or in order to reduce the influence of a reactive substance generated along with the etching, the substrate, the silicon oxide film, In addition, a process of cleaning the patterned Al alloy film and the resist pattern is also necessary.

  Next, the silicon residue generated in the Al alloy film etching process is removed by a two-fluid nozzle. As is well known, the two-fluid nozzle includes a gas inlet, a liquid inlet and a jet, and introduces a pressurized gas from the gas inlet, and uses the pressurized gas to form the liquid inlet. The liquid supplied from is pressurized and ejected. At this time, since the pressurized gas has a higher pressure than the liquid, the liquid mixed with the pressurized gas is accelerated by the pressurized gas, and the velocity is increased and ejected from the ejection port. The mixture of liquid and gas ejected from the two-fluid nozzle collides with the object to be cleaned (silicon oxide film in the present invention) and adheres to the object to be cleaned by the shock wave and jet liquid flow generated at that time. Deposits (silicon residue in the present invention) are removed. The liquid and gas used for the two-fluid nozzle are selected so as not to etch the Al alloy film, silicon, and the base film, and the patterned Al alloy film and the base film containing silicon are etched or influenced. Do not give. For example, in the present invention, pure water and a higher alcohol having 4 or more carbon atoms are selected as the liquid used in the two-fluid nozzle, and nitrogen, air, and argon are selected as the gas. Further, when a liquid that dissolves the resist pattern is selected for use in a two-fluid nozzle, the silicon residue can be removed and the resist can be removed, thereby simplifying the resist stripping process. For example, acetone, methanol, ethanol, N-methyl-2-pyrrolidone (NMP) can be used.

  When the substrate, the silicon oxide film formed on the substrate and the patterned Al alloy film are spun together during the process of removing the silicon residue by the two-fluid nozzle, the mixture from the two-fluid nozzle is obtained. Due to the centrifugal force of the rotation, it flows to the outside, and reattachment of the removed silicon residue can be prevented.

  Further, during the silicon residue removal step, the two-fluid nozzle is swung in a direction toward the center line of spin rotation of the substrate and in one radial direction of the spin rotation, so The mixture comes into direct contact with the silicon oxide film, and the cleaning effect can be improved.

  Thereafter, after the removal of the silicon residue is finished, the substrate, the silicon oxide film formed thereon and the patterned Al alloy film are spun together at high speed to dry their surfaces. You can also.

  Next, a semiconductor device manufacturing apparatus according to the present invention will be briefly described. A feature of the semiconductor device manufacturing apparatus according to the present invention is that it includes a two-fluid nozzle, thereby removing a silicon residue left after completion of the etching process of the Al alloy film. That is, the pressurized and accelerated mixture of gas and liquid collides on the substrate through the two-fluid nozzle, and the silicon residue adhering to the substrate surface is removed. In order to improve the removal effect, a plurality of the two-fluid nozzles are installed in the radial direction of the spin rotation of the substrate, and a cleaning effect can be exerted in a short time on a large-area substrate. In addition, a well-known member can be used with respect to the other member of this manufacturing apparatus, The description with respect to it is abbreviate | omitted here.

  Hereinafter, specific examples will be described, but the present invention is not limited to the following examples as long as the gist thereof is not exceeded.

  An embodiment in which a silicon substrate 1 is used as a substrate and a wet etching method is used will be described as Example 1.

  1 to 3 are cross-sectional process diagrams for explaining a method of manufacturing a semiconductor device according to this embodiment.

  First, as shown in FIG. 1A, a silicon oxide film 2 is formed on a silicon substrate 1, and a contact hole 12 is formed. Next, as shown in FIG. 1B, an Al alloy film 3 containing approximately 1% of silicon is formed on the silicon oxide film 2 so as to cover the contact holes 12. The Al alloy film 3 is connected to the silicon substrate 1 at the bottom of the contact hole 12. Next, as shown in FIG. 1C, the resist pattern 4 is formed on the Al alloy film 3 so that one end thereof is located above the silicon oxide film 2 and the other end thereof is located in the contact hole 12. It is formed by photographic technology. Using the resist pattern 4 as a mask, the Al alloy film 3 is subjected to wet etching to pattern the Al alloy film 3 under the resist pattern 4.

  Next, as shown in FIG. 1D, the Al alloy film 3 is wet-etched with an etching solution 10 containing phosphoric acid, for example, a mixed acid containing phosphoric acid, acetic acid, and nitric acid. At this time, silicon contained in the Al alloy film 3 remains as a silicon residue 5 on the silicon oxide film 2 from which the Al alloy film 3 has been etched. The silicon contained in the Al alloy film 3 also remains as the silicon residue 5 on the silicon substrate 1 in the contact hole 12 in which the Al alloy film 3 has been etched. Next, as shown in FIG. 1E, since wet etching uses an etching solution 10 containing phosphoric acid, the silicon substrate 1 and the silicon oxide film 2 provided thereon are formed in order to terminate the etching. There is also a step of cleaning the remaining Al alloy film 3 and the resist pattern 4 with pure water 13.

  Thereafter, as shown in FIG. 2, the silicon residue 5 generated in the Al alloy film etching process is removed by a two-fluid nozzle 6. As shown in FIG. 2 (a), the two-fluid nozzle 6 includes a gas introduction pipe 7, a liquid introduction pipe 8, and a spout (not shown), and supplies pressurized gas from the gas introduction pipe 7. A mixture obtained by mixing droplets supplied from the liquid introduction tube 8 with the pressurized gas and accelerating the mixture is caused to collide with the silicon oxide film 2, and the silicon oxide film 2 is generated by a shock wave and a jet liquid flow generated by the collision. The upper silicon residue 5 is removed. At the same time, the mixture is also caused to collide with the surface of the silicon substrate 1 exposed in the contact hole 12, and the silicon residue 5 on the surface of the silicon substrate 1 is also removed by the shock wave generated by the collision and the jet liquid flow. As a result, the state shown in FIG. At this time, pure water 13 is used as the liquid used in the two-fluid nozzle 6, the amount of the pure water 13 is 50 to 800 ml, nitrogen is used as the gas, and the nitrogen pressure is 0.1 to 1.0 MPa. The range is not limited to such a numerical value, and the setting can be changed so that the cleaning effect is increased. Furthermore, when acetone or the like is used as a chemical solution for dissolving the resist in the two-fluid nozzle 6, the silicon residue 5 and the resist pattern 4 (positive) can be removed, and the resist stripping process can be simplified.

  Further, during the silicon residue removal step by the two-fluid nozzle 6, as shown in FIG. 3A, the silicon substrate 1, the silicon oxide film 2 formed thereon, and the Al that has not been etched are formed. The alloy film 3 is rotated together, so that the mixture 9 from the two-fluid nozzle 6 flows outward by the centrifugal force of the rotation, and the removed silicon residue 5 is prevented from reattaching. . Further, if the two-fluid nozzle 6 is swung in the direction toward the spin rotation center of the silicon substrate 1 and in the direction toward the peripheral edge of the spin rotation, the removal effect can be improved. As shown in FIG. 3B, the one two-fluid nozzle 6 installed is swung in the direction toward the center of spin rotation of the silicon substrate 1 and in the radial direction of the spin rotation, and directly By removing the mixture 9 from the outlet of the two-fluid nozzle 6 against the silicon oxide film 2, the effect of removing the silicon residue 5 is improved.

  Further, in order to further improve the removal effect of the silicon residue 5, a plurality of the two fluid nozzles 6 are installed in the radial direction of the spin rotation (dotted arrow) of the silicon substrate 1, as shown in FIG. At this time, the plurality of two-fluid nozzles 6 are swung in a direction toward the spin rotation center line S1 of the silicon substrate 1 and a direction toward one peripheral edge of the spin rotation. Here, the center line S1 is a line passing through the center of spin rotation of the silicon substrate 1.

  After the removal of the silicon residue, the silicon substrate 1, the silicon oxide 2 formed thereon, and the Al alloy film 3 that has not been etched are spun together at high speed, Dry the surface.

  Hereinafter, an embodiment using a silicon substrate 1 as a substrate and using a dry etching method will be described as Example 2.

  First, the steps shown in FIGS. 5A to 5C are the same as the steps shown in FIGS. 1A to 1C in the wet etching.

Next, as shown in FIG. 5 (d), the Al alloy film 3 is anisotropically dry etched by Cl ₂ / BCl ₃ plasma. At this time, silicon contained in the Al alloy film 3 remains as a silicon residue 5 on the silicon oxide film 2 obtained by etching the Al alloy film 3. The silicon contained in the Al alloy film 3 also remains as the silicon residue 5 on the silicon substrate 1 in the contact hole 12 in which the Al alloy film 3 has been etched. Further, during anisotropic etching, a reaction product 11 containing Cl adheres to the side wall of the Al alloy film 3 wiring. If the substrate 1 is taken out into the atmosphere as it is, a problem occurs in which moisture in the atmosphere reacts with Cl to corrode the Al alloy 3. Therefore, the step of removing the reaction product 11 by O ₂ plasma after etching the Al alloy 3 is included in the dry etching process.

  Next, as shown in FIG. 5E, in order to reduce the influence of the reactive substance 11 containing Cl, the silicon substrate 1, the silicon oxide film 2 provided thereon, and the remaining Al alloy film 3 are used. Etc. are washed with pure water 13.

  Next, as shown in FIG. 6A, the silicon residue 5 is washed by the two-fluid nozzle 6. At this time, the silicon residue 5 on the silicon substrate 1 in the silicon oxide film 2 and the contact hole 12 is removed by the same operation as in the first embodiment.

  Similarly, as shown in FIG. 6 (b), after the removal of the silicon residue by the two-fluid nozzle 6 is completed, the silicon substrate 1, the silicon oxide 2 formed thereon, and the unetched Al alloy The films 3 are spun together at high speed to dry their surfaces.

  In the above embodiment, the silicon substrate has been described as the substrate. However, when a silicon-containing alloy is etched, a silicon residue remains on the surface. Therefore, the same effect can be obtained even if the substrate is changed to a glass substrate or the like.

  The present invention also provides an apparatus for manufacturing a semiconductor device using the above manufacturing method. However, the present invention is configured so that the above manufacturing method can be applied. According to the apparatus, a substrate is etched and then a two-fluid nozzle is used. A silicon residue can be removed, and a high-quality semiconductor device can be manufactured easily at a low manufacturing cost.

  Note that productivity can be improved by an apparatus that consistently processes the steps from the etching of the Al alloy film 3 to the cleaning by the two-fluid nozzle 6.

  Of course, the present invention is not limited to the above-described embodiments, and various modifications are possible within the scope shown in the claims, and can be obtained by appropriately combining technical means disclosed in different embodiments. Embodiments are also included in the technical scope of the present invention.

  The present invention can be applied to a method of manufacturing a semiconductor device having an Al alloy film wiring containing silicon, and in particular, when forming an Al alloy film wiring containing silicon, silicon residues in the Al alloy film can be removed. The present invention can be applied to a semiconductor device manufacturing method and a semiconductor device manufacturing apparatus that executes the manufacturing method.

(A)-(e) is sectional process drawing for demonstrating the manufacturing method of the semiconductor device which concerns on Example 1 of this invention. (A) And (b) is sectional process drawing for demonstrating the manufacturing method of the semiconductor device which concerns on Example 1 of this invention. (A) And (b) is a top view for demonstrating the manufacturing method of the semiconductor device which concerns on Example 1 of this invention. It is a top view for demonstrating the manufacturing method of the semiconductor device at the time of installing two or more 2 fluid nozzles in this invention. (A)-(e) is sectional process drawing for demonstrating the manufacturing method of the semiconductor device which concerns on Example 2 of this invention. (A) And (b) is sectional process drawing for demonstrating the manufacturing method of the semiconductor device which concerns on Example 2 of this invention. It is sectional drawing which shows an example of the conventional dry etching apparatus. It is sectional drawing which shows an example of the conventional wet etching apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Silicon substrate 2 ... Silicon oxide film 3 ... Al alloy film 4 ... Resist pattern 5 ... Silicon residue 6 ... 2 fluid nozzle 7 ... Gas introduction pipe 8 ... Liquid introduction pipe 9 ... Mixture 10 ... Etching liquid 11 ... Reaction product 12 ... Contact hole 13 ... Pure water 20 ... Reactive gas supply port 21 ... Exhaust port 22 ... Upper electrode 23 ... Lower electrode 24 ... High frequency power supply 25 ... Plasma 26 ... Substrate 27 ... Etching solution 30 ... Reaction chamber 31 ... Dip tank 32 ... Wafer holder

Claims (12)

Forming an Al alloy film containing silicon on the substrate;
Providing a resist pattern on the Al alloy film;
Etching the Al alloy film using the resist pattern as a mask;
A step of cleaning the substrate, the resist pattern and the remaining Al alloy film after the etching,
A method for manufacturing a semiconductor device, comprising: a step of removing a silicon residue generated in the Al alloy film etching step by a two-fluid nozzle after the substrate cleaning step.   2. The method of manufacturing a semiconductor device according to claim 1, wherein what is discharged from the two-fluid nozzle is a mixture of the Al alloy film, the silicon residue, and a liquid and a gas that do not etch the substrate.   2. The method of manufacturing a semiconductor device according to claim 1, further comprising a step of forming a base film having a contact hole on the substrate before forming the Al alloy film.   4. The semiconductor device according to claim 3, wherein what is discharged from the two-fluid nozzle is a mixture of the Al alloy film, the silicon residue, the base film, and a liquid and a gas that do not etch the substrate. Manufacturing method. The liquid discharged from the two-fluid nozzle is pure water, a higher alcohol having 4 or more carbon atoms,
The method of manufacturing a semiconductor device according to claim 2, wherein the gas discharged from the two-fluid nozzle is nitrogen, air, or argon.   5. The method of manufacturing a semiconductor device according to claim 2, wherein a liquid that dissolves the resist pattern is used as the liquid discharged from the two-fluid nozzle.   7. The method of manufacturing a semiconductor device according to claim 6, wherein the liquid that dissolves the resist pattern is acetone, methanol, ethanol, or N-methyl-2-pyrrolidone.   The method of manufacturing a semiconductor device according to claim 1, wherein the substrate is spin-rotated during the removing step by the two-fluid nozzle.   9. The removal step using the two-fluid nozzle, wherein the two-fluid nozzle is swung in a direction toward a spin rotation center line of the substrate and a direction toward a peripheral side of the spin rotation. Semiconductor device manufacturing method.   10. The semiconductor device according to claim 1, wherein after the cleaning by the two-fluid nozzle is completed, the substrate is spun at high speed and the substrate is dried by a centrifugal force. Production method.   An apparatus for manufacturing a semiconductor device, comprising a two-fluid nozzle, wherein the manufacturing method according to any one of claims 1 to 10 is executed to etch an Al alloy film and then remove silicon residues by the two-fluid nozzle. .   The semiconductor device manufacturing apparatus according to claim 11, wherein a plurality of the two-fluid nozzles are installed in a radial direction of spin rotation.

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