JP2009284370A5 - - Google Patents

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JP2009284370A5
JP2009284370A5 JP2008136193A JP2008136193A JP2009284370A5 JP 2009284370 A5 JP2009284370 A5 JP 2009284370A5 JP 2008136193 A JP2008136193 A JP 2008136193A JP 2008136193 A JP2008136193 A JP 2008136193A JP 2009284370 A5 JP2009284370 A5 JP 2009284370A5
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voltage
gate
transistor
application terminal
source
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JP2008136193A
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JP2009284370A (en
JP5210710B2 (en
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Claims (10)

出力トランジスタのゲート電圧を駆動するゲート駆動装置であって、
前記ゲート電圧と所定の閾値電圧との高低関係を検出する電圧検出回路と、前記電圧検出回路の検出結果に基づいて前記出力トランジスタのゲートと電源電圧の印加端との間を導通/遮断するスイッチと、を有して成ることを特徴とするゲート駆動装置。
A gate driving device for driving a gate voltage of an output transistor,
A voltage detection circuit for detecting a level relationship between the gate voltage and a predetermined threshold voltage, and a switch for conducting / cutting off between the gate of the output transistor and a power supply voltage application terminal based on a detection result of the voltage detection circuit And a gate driving device characterized by comprising:
前記電圧検出回路は、前記閾値電圧を生成する閾値電圧生成部と、前記ゲート電圧と前記閾値電圧とを比較する電圧比較部と、前記電圧比較部の比較結果に基づいて前記スイッチの制御信号を生成する出力部と、を有して成ることを特徴とする請求項1に記載のゲート駆動装置。   The voltage detection circuit includes: a threshold voltage generation unit that generates the threshold voltage; a voltage comparison unit that compares the gate voltage with the threshold voltage; and a control signal for the switch based on a comparison result of the voltage comparison unit. The gate drive device according to claim 1, further comprising: an output unit that generates the output unit. 前記電圧比較部は、カレントミラー回路を形成するトランジスタ対に前記ゲート電圧と前記閾値電圧を印加して、前記カレントミラー回路の出力電流を前記出力部に送出し、前記出力部は、前記出力電流を電圧変換することで前記スイッチの制御信号を生成することを特徴とする請求項2に記載のゲート駆動装置。 The voltage comparison unit, the gate voltage and the threshold voltage to sign addition to the transistor pair forming a current mirror circuit, and sends an output current of the current mirror circuit to the output unit, the output unit, the output The gate driving device according to claim 2, wherein a control signal for the switch is generated by converting a current into a voltage. 前記電圧比較部は、前記ゲート電圧及び前記閾値電圧を前記トランジスタ対の各ソースに各々印加することを特徴とする請求項3に記載のゲート駆動装置。  4. The gate driving device according to claim 3, wherein the voltage comparison unit applies the gate voltage and the threshold voltage to each source of the transistor pair. 前記電圧検出回路は、前記ゲート電圧の論理レベルに応じて前記出力トランジスタのゲートと前記電圧比較部のゲート電圧入力端との間を導通/遮断するゲート電圧遮断部を有して成ることを特徴とする請求項2〜請求項4のいずれかに記載のゲート駆動装置。  The voltage detection circuit includes a gate voltage cutoff unit that conducts / cuts off between a gate of the output transistor and a gate voltage input terminal of the voltage comparison unit according to a logic level of the gate voltage. The gate driving device according to claim 2. 前記ゲート電圧遮断部は、前記ゲート電圧を分圧して前記電圧比較部に供給することを特徴とする請求項5に記載のゲート駆動装置。  6. The gate driving apparatus of claim 5, wherein the gate voltage cutoff unit divides the gate voltage and supplies the divided voltage to the voltage comparison unit. 前記閾値電圧生成部は、前記電源電圧よりも所定値だけ低い前記閾値電圧を生成し、前記出力部は、前記ゲート電圧が前記閾値電圧以上となったときに前記スイッチを導通することを特徴とする請求項6に記載のゲート駆動装置。  The threshold voltage generation unit generates the threshold voltage lower than the power supply voltage by a predetermined value, and the output unit conducts the switch when the gate voltage becomes equal to or higher than the threshold voltage. The gate driving device according to claim 6. 前記ゲート電圧遮断部は、ソースが抵抗を介して前記電源電圧の印加端に接続され、ドレインが前記ゲートの印加端に接続され、ゲートが制御信号の印加端に接続された第1トランジスタと;ソースが前記電源電圧の印加端に接続され、ドレインが前記電圧比較部のゲート電圧入力端に接続され、ゲートが第1トランジスタのソースに接続された第2トランジスタと;ソースが前記電圧比較部のゲート電圧入力端に接続され、ドレインが前記ゲート電圧の印加端に接続され、ゲートが前記制御信号の印加端に接続された第3トランジスタと;を有して成ることを特徴とする請求項7に記載のゲート駆動装置。  The gate voltage blocking unit includes a first transistor having a source connected to the application terminal of the power supply voltage via a resistor, a drain connected to the application terminal of the gate, and a gate connected to an application terminal of the control signal; A second transistor having a source connected to the power supply voltage application terminal, a drain connected to the gate voltage input terminal of the voltage comparison unit, and a gate connected to the source of the first transistor; 8. A third transistor connected to a gate voltage input terminal, a drain connected to the gate voltage application terminal, and a gate connected to the control signal application terminal. The gate drive device described in 1. 前記閾値電圧生成部は、前記ソース電圧よりも所定値だけ高い前記閾値電圧を生成し、前記出力部は、前記ゲート電圧が前記閾値電圧以下となったときに前記スイッチを導通することを特徴とする請求項6に記載のゲート駆動装置。  The threshold voltage generation unit generates the threshold voltage higher than the source voltage by a predetermined value, and the output unit conducts the switch when the gate voltage becomes equal to or lower than the threshold voltage. The gate driving device according to claim 6. 前記ゲート電圧遮断部は、ソースが抵抗を介して前記ソース電圧の印加端に接続され、ドレインが前記ゲートの印加端に接続され、ゲートが制御信号の印加端に接続された第1トランジスタと;ソースが前記ソース電圧の印加端に接続され、ドレインが前記電圧比較部のゲート電圧入力端に接続され、ゲートが第1トランジスタのソースに接続された第2トランジスタと;ソースが前記電圧比較部のゲート電圧入力端に接続され、ドレインが前記ゲート電圧の印加端に接続され、ゲートが前記制御信号の印加端に接続された第3トランジスタと;を有して成ることを特徴とする請求項9に記載のゲート駆動装置。  The gate voltage cutoff unit includes a first transistor having a source connected to the application terminal of the source voltage via a resistor, a drain connected to the application terminal of the gate, and a gate connected to the application terminal of the control signal; A second transistor having a source connected to the source voltage application terminal, a drain connected to the gate voltage input terminal of the voltage comparison unit, and a gate connected to the source of the first transistor; and a source of the voltage comparison unit 10. A third transistor connected to a gate voltage input terminal, having a drain connected to the gate voltage application terminal, and a gate connected to the control signal application terminal. The gate drive device described in 1.
JP2008136193A 2008-05-26 2008-05-26 Gate drive device Active JP5210710B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008136193A JP5210710B2 (en) 2008-05-26 2008-05-26 Gate drive device

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Application Number Priority Date Filing Date Title
JP2008136193A JP5210710B2 (en) 2008-05-26 2008-05-26 Gate drive device

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JP2009284370A JP2009284370A (en) 2009-12-03
JP2009284370A5 true JP2009284370A5 (en) 2012-07-12
JP5210710B2 JP5210710B2 (en) 2013-06-12

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* Cited by examiner, † Cited by third party
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US11652473B2 (en) 2016-12-16 2023-05-16 Wolfspeed, Inc. Power modules having an integrated clamp circuit and process thereof
US11652478B2 (en) 2016-12-16 2023-05-16 Wolfspeed, Inc. Power modules having an integrated clamp circuit and process thereof

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* Cited by examiner, † Cited by third party
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JPH02262822A (en) * 1989-03-08 1990-10-25 Hitachi Ltd Overcurrent protective circuit for electrostatic induction self-arcextinguishing element
JPH02298067A (en) * 1989-05-12 1990-12-10 Nec Corp Collector clamp circuit
JP3047843B2 (en) * 1997-02-12 2000-06-05 日本電気株式会社 Overcurrent protection circuit

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