JP2009283593A - Method of manufacturing semiconductor apparatus - Google Patents

Method of manufacturing semiconductor apparatus Download PDF

Info

Publication number
JP2009283593A
JP2009283593A JP2008132807A JP2008132807A JP2009283593A JP 2009283593 A JP2009283593 A JP 2009283593A JP 2008132807 A JP2008132807 A JP 2008132807A JP 2008132807 A JP2008132807 A JP 2008132807A JP 2009283593 A JP2009283593 A JP 2009283593A
Authority
JP
Japan
Prior art keywords
semiconductor wafer
polyimide
coating solution
film
polyimide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008132807A
Other languages
Japanese (ja)
Inventor
Soichi Sugawara
宗一 菅原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2008132807A priority Critical patent/JP2009283593A/en
Publication of JP2009283593A publication Critical patent/JP2009283593A/en
Withdrawn legal-status Critical Current

Links

Images

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor apparatus for more thickly forming a polyimide layer. <P>SOLUTION: The method includes a step in which a polyimide coating solution is applied on the surface of a semiconductor wafer for the first time, the semiconductor wafer is rotated so as to spread the polyimide coating solution on the whole surface of the semiconductor wafer, thereby forming a first polyimide film on the surface of the semiconductor wafer, a polyimide coating solution is applied on the surface of the first polyimide film for the second time and the semiconductor wafer is rotated so as to spread the polyimide coating solution on the whole surface of the first polyimide film, thereby forming a second polyimide film on the surface of the first polyimide film. A rotational speed in rotating the semiconductor wafer after applying the polyimide coating solution for the second time is slower than that in rotating the semiconductor wafer after applying the polyimide coating solution for the first time. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、半導体ウエハ上にポリイミド膜を形成する工程を有する半導体装置の製造方法に関し、特に、ポリイミド膜をより厚く形成できる半導体装置の製造方法に関する。   The present invention relates to a method for manufacturing a semiconductor device having a step of forming a polyimide film on a semiconductor wafer, and more particularly to a method for manufacturing a semiconductor device capable of forming a polyimide film thicker.

図４は、ポリイミド膜を塗布する方法を説明する断面図である。
図４に示す半導体ウエハ１３は、シリコン基板に例えばトランジスタのような半導体素子を形成し、半導体素子の上に例えばシリコン酸化膜からなる層間絶縁膜を形成し、層間絶縁膜上に配線を形成し、最上層の配線上に例えばシリコン窒化膜からなるパッシベーション膜を形成した後の半導体ウエハである。この半導体ウエハ１３上にポリイミド膜を塗布する方法を以下に説明する。 FIG. 4 is a cross-sectional view illustrating a method for applying a polyimide film.
A semiconductor wafer 13 shown in FIG. 4 is formed by forming a semiconductor element such as a transistor on a silicon substrate, forming an interlayer insulating film made of, for example, a silicon oxide film on the semiconductor element, and forming wiring on the interlayer insulating film. A semiconductor wafer after a passivation film made of, for example, a silicon nitride film is formed on the uppermost wiring. A method for applying a polyimide film on the semiconductor wafer 13 will be described below.

図４に示すように、塗布装置の保持部１２に半導体ウエハ１３を保持する。次いで、ノズル１４からポリイミド塗布液１５を吐出することにより、半導体ウエハ１３の中央にポリイミド塗布液１５を塗布する。   As shown in FIG. 4, the semiconductor wafer 13 is held on the holding unit 12 of the coating apparatus. Next, the polyimide coating solution 15 is applied to the center of the semiconductor wafer 13 by discharging the polyimide coating solution 15 from the nozzle 14.

次に、回転軸１１を所定の回転速度で所定時間回転させることにより、塗布されたポリイミド塗布液１５が半導体ウエハ１３の中央から外周へ向けて広げられ、半導体ウエハ１３の全面に行き渡らせる。この際、半導体ウエハ１３の回転による遠心力によってポリイミド塗布液１５の一部は半導体ウエハ１３の表面から除去される。このようにして半導体ウエハ１３の表面上にポリイミド膜が形成される（例えば特許文献１参照）。   Next, by rotating the rotating shaft 11 at a predetermined rotation speed for a predetermined time, the applied polyimide coating solution 15 is spread from the center to the outer periphery of the semiconductor wafer 13 and spread over the entire surface of the semiconductor wafer 13. At this time, a part of the polyimide coating solution 15 is removed from the surface of the semiconductor wafer 13 by the centrifugal force generated by the rotation of the semiconductor wafer 13. In this way, a polyimide film is formed on the surface of the semiconductor wafer 13 (see, for example, Patent Document 1).

特開平１１−１６８１０号公報Japanese Patent Laid-Open No. 11-16810

ところで、ポリイミド膜を緩衝材として用いるために、膜厚のより厚いポリイミド膜が要求される。この要求に応える方法としては、半導体ウエハ上に一度、ポリイミド塗布液を滴下した後の半導体ウエハの回転速度を調整することによりポリイミド膜の膜厚を制御する方法がある。   By the way, in order to use a polyimide film as a buffer material, a thicker polyimide film is required. As a method for meeting this requirement, there is a method of controlling the film thickness of the polyimide film by adjusting the rotation speed of the semiconductor wafer after the polyimide coating solution is once dropped on the semiconductor wafer.

しかしながら、上記の方法では、ポリイミド塗布液の粘度と回転速度の範囲内での膜厚しか得られない。
つまり、同じ回転速度でもポリイミド塗布液の粘度を高くすればするほど厚いポリイミド膜を形成できるが、ポリイミド膜の膜厚が半導体ウエハの面内で不均一になってしまう。また、同じポリイミド塗布液の粘度でも回転速度を遅くすればするほど厚いポリイミド膜を形成できるが、ポリイミド膜の膜厚が半導体ウエハの面内で不均一になってしまう。このため、面内の膜厚均一性を良くしつつ厚いポリイミド膜を得るには、ポリイミド塗布液の粘度を高くするのにも回転速度を速くするのにも限界がある。従って、この方法ではポリイミド膜の厚膜化に十分に応えることはできない。 However, in the above method, only the film thickness within the range of the viscosity and rotation speed of the polyimide coating solution can be obtained.
That is, as the viscosity of the polyimide coating solution is increased even at the same rotational speed, a thick polyimide film can be formed, but the film thickness of the polyimide film becomes non-uniform in the plane of the semiconductor wafer. Moreover, even if the viscosity of the same polyimide coating solution is decreased, a thicker polyimide film can be formed as the rotational speed is decreased, but the film thickness of the polyimide film becomes non-uniform in the plane of the semiconductor wafer. For this reason, in order to obtain a thick polyimide film while improving the in-plane film thickness uniformity, there are limits to increasing the viscosity of the polyimide coating solution and increasing the rotational speed. Therefore, this method cannot sufficiently respond to the thickening of the polyimide film.

本発明は上記のような事情を考慮してなされたものであり、その目的は、ポリイミド膜をより厚く形成できる半導体装置の製造方法を提供することにある。   The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a method of manufacturing a semiconductor device capable of forming a polyimide film thicker.

上記課題を解決するため、本発明に係る半導体装置の製造方法は、半導体ウエハの表面上に１度目のポリイミド塗布液を塗布し、
前記半導体ウエハを回転させ、前記半導体ウエハの全表面上に前記１度目のポリイミド塗布液を行き渡らせることにより、前記半導体ウエハの表面上に第１のポリイミド膜を形成し、
前記第１のポリイミド膜の表面上に２度目のポリイミド塗布液を塗布し、
前記半導体ウエハを回転させ、前記第１のポリイミド膜の全表面上に前記２度目のポリイミド塗布液を行き渡らせることにより、前記第１のポリイミド膜の表面上に第２のポリイミド膜を形成する工程を有する半導体装置の製造方法であって、
前記２度目のポリイミド塗布液を塗布した後に前記半導体ウエハを回転させる際の回転速度は、前記１度目のポリイミド塗布液を塗布した後に前記半導体ウエハを回転させる際の回転速度より遅いことを特徴とする。 In order to solve the above problems, a method for manufacturing a semiconductor device according to the present invention applies a first polyimide coating solution on the surface of a semiconductor wafer,
By rotating the semiconductor wafer and spreading the first polyimide coating solution over the entire surface of the semiconductor wafer, a first polyimide film is formed on the surface of the semiconductor wafer,
Apply a second polyimide coating solution on the surface of the first polyimide film,
Forming the second polyimide film on the surface of the first polyimide film by rotating the semiconductor wafer and spreading the second polyimide coating solution over the entire surface of the first polyimide film; A method of manufacturing a semiconductor device having
The rotation speed when rotating the semiconductor wafer after applying the second polyimide coating liquid is slower than the rotation speed when rotating the semiconductor wafer after applying the first polyimide coating liquid. To do.

上記半導体装置の製造方法によれば、半導体ウエハ上に１度目のポリイミド塗布液を滴下し、半導体ウエハを回転させて半導体ウエハの全面に行き渡らせ、その後に２度目のポリイミド塗布液を滴下し、半導体ウエハの回転速度を遅くすることにより、ポリイミド膜をより厚く形成することができる。このように半導体ウエハの回転速度を遅くできる理由は、同質の膜である第１のポリイミド膜を下地としているため、摩擦を小さくできるからである。   According to the manufacturing method of the semiconductor device, the first polyimide coating solution is dropped on the semiconductor wafer, the semiconductor wafer is rotated and spread over the entire surface of the semiconductor wafer, and then the second polyimide coating solution is dropped. By reducing the rotation speed of the semiconductor wafer, the polyimide film can be formed thicker. The reason why the rotational speed of the semiconductor wafer can be reduced in this way is that the first polyimide film, which is a homogeneous film, is used as a base, and therefore friction can be reduced.

また、本発明に係る半導体装置の製造方法において、前記２度目のポリイミド塗布液を塗布した後に前記半導体ウエハを回転させる際の回転速度は１２００ｒｐｍ以上１６００ｒｐｍ以下であり、
前記工程によって前記半導体ウエハの表面上に形成された前記第１及び第２のポリイミド膜の全体の平均膜厚は１２．５μｍ以上１８μｍ以下であることも可能である。 Further, in the method of manufacturing a semiconductor device according to the present invention, a rotation speed when rotating the semiconductor wafer after applying the second polyimide coating solution is 1200 rpm or more and 1600 rpm or less,
The overall average film thickness of the first and second polyimide films formed on the surface of the semiconductor wafer by the process may be 12.5 μm or more and 18 μm or less.

また、本発明に係る半導体装置の製造方法において、前記第１及び第２のポリイミド膜の全体の膜厚は、最も厚い部分の膜厚と最も薄い部分の膜厚との差が２μｍ以下であることが好ましい。   In the method of manufacturing a semiconductor device according to the present invention, the difference between the thickness of the thickest portion and the thickness of the thinnest portion of the first and second polyimide films is 2 μm or less. It is preferable.

また、本発明に係る半導体装置の製造方法において、前記半導体ウエハの表面上に１度目のポリイミド塗布液を塗布する前に、前記半導体ウエハ上にパッシベーション膜を形成する工程を具備することも可能である。   The method for manufacturing a semiconductor device according to the present invention may further include a step of forming a passivation film on the semiconductor wafer before applying a first polyimide coating solution on the surface of the semiconductor wafer. is there.

以下、図面を参照して本発明の実施形態について説明する。
本実施の形態による半導体装置の製造方法は、従来に比べて膜厚の厚いポリイミド膜を半導体ウエハ上に形成する工程を有するものである。このポリイミド膜は、ＩＣチップの表面のオーバーコート（緩衝材）に使用されることが好ましい。なお、本実施の形態において半導体ウエハ上にポリイミド塗布液を塗布する際は図４に示す塗布装置が用いられる。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
The method for manufacturing a semiconductor device according to the present embodiment includes a step of forming a polyimide film having a thickness larger than that of a conventional method on a semiconductor wafer. This polyimide film is preferably used for an overcoat (buffer material) on the surface of the IC chip. In the present embodiment, when a polyimide coating solution is applied onto a semiconductor wafer, a coating apparatus shown in FIG. 4 is used.

まず、シリコン基板（半導体ウエハ）に例えばトランジスタのような半導体素子を形成する。次いで、半導体素子の上に例えばシリコン酸化膜からなる層間絶縁膜を形成し、層間絶縁膜上に配線を形成する。これを繰り返すことにより多層配線が形成される。次いで、最上層の配線上に例えばシリコン窒化膜からなるパッシベーション膜を形成する。この後、パッシベーション膜上にポリイミド膜を形成する。以下にポリイミド膜を形成する方法について詳細に説明する。   First, a semiconductor element such as a transistor is formed on a silicon substrate (semiconductor wafer). Next, an interlayer insulating film made of, for example, a silicon oxide film is formed on the semiconductor element, and wiring is formed on the interlayer insulating film. By repeating this, a multilayer wiring is formed. Next, a passivation film made of, for example, a silicon nitride film is formed on the uppermost wiring. Thereafter, a polyimide film is formed on the passivation film. The method for forming the polyimide film will be described in detail below.

図４に示すように、塗布装置の保持部１２に半導体ウエハ１３を保持する。次いで、ノズル１４からポリイミド塗布液１５を吐出することにより、半導体ウエハ１３の中央に１度目のポリイミド塗布液１５を塗布する。次に、回転軸１１を回転させることにより、塗布されたポリイミド塗布液１５が半導体ウエハ１３の中央から外周へ向けて広げられ、半導体ウエハ１３の全面に行き渡らせる。この際の半導体ウエハ１３の回転速度は２５００ｒｐｍまで高くされる。このとき、半導体ウエハ１３の回転による遠心力によってポリイミド塗布液１５の一部は半導体ウエハ１３の表面から除去される。このようにして半導体ウエハ１３の表面上に第１のポリイミド膜が形成される。   As shown in FIG. 4, the semiconductor wafer 13 is held on the holding unit 12 of the coating apparatus. Next, the polyimide coating solution 15 is discharged from the nozzle 14 to apply the first polyimide coating solution 15 to the center of the semiconductor wafer 13. Next, by rotating the rotating shaft 11, the applied polyimide coating solution 15 is spread from the center of the semiconductor wafer 13 toward the outer periphery, and spreads over the entire surface of the semiconductor wafer 13. At this time, the rotation speed of the semiconductor wafer 13 is increased to 2500 rpm. At this time, a part of the polyimide coating solution 15 is removed from the surface of the semiconductor wafer 13 by the centrifugal force generated by the rotation of the semiconductor wafer 13. In this way, a first polyimide film is formed on the surface of the semiconductor wafer 13.

次に、半導体ウエハの回転を停止させ、ノズル１４からポリイミド塗布液１５を吐出することにより、前記第１のポリイミド膜上に２度目のポリイミド塗布液１５を塗布する。次に、回転軸１１を回転させることにより、塗布された２度目のポリイミド塗布液１５が半導体ウエハ１３の中央から外周へ向けて広げられ、前記第１のポリイミド膜の全面に行き渡らせる。この際の半導体ウエハ１３の回転速度は１２００ｒｐｍ以上１６００ｒｐｍ以下まで高くされることが好ましい。このとき、半導体ウエハ１３の回転による遠心力によってポリイミド塗布液１５の一部は半導体ウエハ１３の表面から除去される。   Next, the rotation of the semiconductor wafer is stopped, and the polyimide coating solution 15 is discharged from the nozzle 14, thereby applying the polyimide coating solution 15 for the second time on the first polyimide film. Next, by rotating the rotating shaft 11, the applied second polyimide coating solution 15 is spread from the center of the semiconductor wafer 13 to the outer periphery, and spreads over the entire surface of the first polyimide film. At this time, the rotational speed of the semiconductor wafer 13 is preferably increased to 1200 rpm or more and 1600 rpm or less. At this time, a part of the polyimide coating solution 15 is removed from the surface of the semiconductor wafer 13 by the centrifugal force generated by the rotation of the semiconductor wafer 13.

このようにして半導体ウエハ１３の表面上には第１のポリイミド膜が形成され、第１のポリイミド膜上には第２のポリイミド膜が形成される。その結果、半導体ウエハ１３上に形成された、第１のポリイミド膜と第２のポリイミド膜からなるポリイミド膜の膜厚の平均を１２．５μｍ以上１８μｍ以下とすることできる。この際、前記ポリイミド膜の膜厚の最も厚い部分の膜厚と最も薄い部分の膜厚との差は２μｍ以下とすることができる。つまり、２μｍのレンジに入っているポリイミド膜とすることができるので、膜厚均一性の良いポリイミド膜を半導体ウエハ上に形成することができる。   In this way, the first polyimide film is formed on the surface of the semiconductor wafer 13, and the second polyimide film is formed on the first polyimide film. As a result, the average film thickness of the polyimide film made of the first polyimide film and the second polyimide film formed on the semiconductor wafer 13 can be set to 12.5 μm or more and 18 μm or less. At this time, the difference between the film thickness of the thickest part and the film thickness of the thinnest part of the polyimide film can be 2 μm or less. That is, since the polyimide film can be in the range of 2 μm, it is possible to form a polyimide film with good film thickness uniformity on the semiconductor wafer.

上記実施の形態によれば、２度目のポリイミド塗布液を滴下している半導体ウエハを回転させる際に、同質の膜である第１のポリイミド膜を下地としているため、摩擦が小さく短時間では半導体ウエハの周縁部までポリイミド塗布液を拡散させることがでる。従って、２度目のポリイミド塗布液を滴下した後の半導体ウエハの回転速度を、１度目のポリイミド塗布液を滴下した後の半導体ウエハの回転速度より遅くすることができる。その結果、従来に比べて面内の膜厚均一性を良くしつつ膜厚の厚いポリイミド膜を半導体ウエハ上に形成することができる。よって、ポリイミド膜を緩衝材として用いる場合に、緩衝材の能力を向上させることができる。   According to the above embodiment, when the semiconductor wafer on which the polyimide coating solution is dropped for the second time is rotated, the first polyimide film, which is a homogeneous film, is used as a base, so that the friction is small and the semiconductor is short in a short time. The polyimide coating solution can be diffused to the peripheral edge of the wafer. Therefore, the rotation speed of the semiconductor wafer after the second polyimide coating solution is dropped can be made slower than the rotation speed of the semiconductor wafer after the first polyimide coating solution is dropped. As a result, it is possible to form a thick polyimide film on the semiconductor wafer while improving the in-plane film thickness uniformity as compared with the prior art. Therefore, when a polyimide film is used as a buffer material, the capacity of the buffer material can be improved.

また、上述したように、２度目のポリイミド塗布液を滴下した半導体ウエハを回転させる際に、同質の膜である第１のポリイミド膜を下地とすることにより摩擦を小さくできるため、より粘度の高いポリイミド塗布液を用いることが可能となる。言い換えると、粘度の高いポリイミド塗布液を用いると、このポリイミド塗布液が半導体ウエハの中央から周縁部に向けて広がる過程において塗布液中の溶剤が蒸発するため、半導体ウエハの中央部と周縁部とで膜厚差が生じ易いが、上述したように摩擦を小さくすることにより、このような膜厚差を抑えることができ、半導体ウエハの中央部でポリイミド膜に凹みが発生することも抑制でき、結果として、ポリイミド膜の膜厚が半導体ウエハの面内で不均一になることを抑制できる。このような点においても本実施の形態では、従来に比べて面内の膜厚均一性を良くしつつ膜厚の厚いポリイミド膜を半導体ウエハ上に形成することができる。   In addition, as described above, when the semiconductor wafer to which the polyimide coating solution is dropped for the second time is rotated, the friction can be reduced by using the first polyimide film, which is a homogeneous film, as a base, so that the viscosity is higher. A polyimide coating solution can be used. In other words, when a polyimide coating solution having a high viscosity is used, the solvent in the coating solution evaporates in the process in which the polyimide coating solution spreads from the center of the semiconductor wafer toward the peripheral portion. However, by reducing the friction as described above, it is possible to suppress such a difference in film thickness, and it is possible to suppress the occurrence of a dent in the polyimide film at the center of the semiconductor wafer. As a result, it can suppress that the film thickness of a polyimide film becomes non-uniform in the surface of a semiconductor wafer. Also in this respect, in the present embodiment, a thick polyimide film can be formed on a semiconductor wafer while improving the in-plane film thickness uniformity as compared with the prior art.

なお、本発明は上述した実施形態に限定されるものではなく、本発明の主旨を逸脱しない範囲内で種々変更して実施することが可能である。   Note that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.

上述した実施の形態と同様の方法で半導体ウエハ上にポリイミド膜を形成した実施例及び従来技術と同様の方法で半導体ウエハ上にポリイミド膜を形成した比較例について説明する。   An example in which a polyimide film is formed on a semiconductor wafer by a method similar to the above-described embodiment and a comparative example in which a polyimide film is formed on a semiconductor wafer by a method similar to the prior art will be described.

図２は、本発明の実施例によるポリイミド膜の膜厚と半導体ウエハ上に位置（POSITION）との関係を示すものであり、膜厚面内プロファイルを示すグラフである。図３は、比較例によるポリイミド膜の膜厚と半導体ウエハ上に位置（POSITION）との関係を示すものであり、膜厚面内プロファイルを示すグラフである。なお、図２及び図３は、半導体ウエハの中心を通る１５点を測定したものである。
図１は、図２及び図３の結果を、ポリイミド膜の平均膜厚（AVE）及びポリイミド膜の膜厚の最も厚い部分と最も薄い部分との差(RANGE)それぞれと半導体ウエハの回転数との関係を示す図である。 FIG. 2 is a graph showing the relationship between the film thickness of the polyimide film according to the embodiment of the present invention and the position (POSITION) on the semiconductor wafer, and the film thickness in-plane profile. FIG. 3 is a graph showing the relationship between the film thickness of the polyimide film according to the comparative example and the position (POSITION) on the semiconductor wafer, and the film thickness in-plane profile. 2 and 3 are obtained by measuring 15 points passing through the center of the semiconductor wafer.
FIG. 1 shows the results of FIGS. 2 and 3 based on the average film thickness (AVE) of the polyimide film, the difference between the thickest part and the thinnest part of the polyimide film (RANGE), It is a figure which shows the relationship.

図１に示す回転数は、実施例（２度塗り）の場合、２度目のポリイミド塗布液を塗布した後の半導体ウエハの回転速度であり、比較例（１度塗り）の場合、ポリイミド塗布液を塗布した後の半導体ウエハの回転速度である。   The rotation speed shown in FIG. 1 is the rotation speed of the semiconductor wafer after the second polyimide coating solution is applied in the case of the example (twice coating), and the polyimide coating solution in the case of the comparative example (one coating). It is the rotational speed of the semiconductor wafer after apply | coating.

（実施例の塗布条件）
・ポリイミド塗布液の材料 ：ＰＩＭＥＬ−Ｇ６２４６Ｐ ３５００ｃＰ（旭化成製）
・ポリイミド塗布液の粘度 ： ３５００ｃＰ
・１回の滴下量 ： １．５ｇ
・半導体ウエハ ： ６ｉｎｃｈ Ｂａｒｅ−Ｓｉ
・回転塗布装置 ： Ｍｋ−Ｖ２（ＴＥＬ製）
・１度目のポリイミド塗布液を滴下した後の半導体ウエハの回転速度（最高速度）及び回転時間：２５００ｒｐｍ及び１８秒
・２度目のポリイミド塗布液を滴下した後の半導体ウエハの回転速度（最高速度）及び回転時間：１０００〜１９００ｒｐｍ及び４０秒 (Application conditions of the examples)
-Material of polyimide coating solution: PIMEL-G6246P 3500cP (manufactured by Asahi Kasei)
・ Viscosity of polyimide coating solution: 3500 cP
・ One drop: 1.5g
・ Semiconductor wafer: 6 inch Bare-Si
・ Rotating coating device: Mk-V 2 (made by TEL)
・ Rotation speed (maximum speed) and rotation time of the semiconductor wafer after the first polyimide coating solution is dropped: 2500 rpm and 18 seconds. ・ Rotation speed (maximum speed) of the semiconductor wafer after the second polyimide coating solution is dropped. And rotation time: 1000-1900 rpm and 40 seconds

（比較例の塗布条件）
・ポリイミド塗布液の材料 ：ＰＩＭＥＬ−Ｇ６２４６Ｐ ３５００ｃＰ（旭化成製）
・ポリイミド塗布液の粘度 ： ３５００ｃＰ
・１回の滴下量 ： １．５ｇ
・半導体ウエハ ： ６ｉｎｃｈ Ｂａｒｅ−Ｓｉ
・回転塗布装置 ： Ｍｋ−Ｖ２（ＴＥＬ製）
・ポリイミド塗布液を滴下した後の半導体ウエハの回転速度（最高速度）及び回転時間：１５００〜２５００ｒｐｍ及び１８秒 (Application conditions for comparative examples)
-Material of polyimide coating solution: PIMEL-G6246P 3500cP (manufactured by Asahi Kasei)
・ Viscosity of polyimide coating solution: 3500 cP
・ One drop: 1.5g
・ Semiconductor wafer: 6 inch Bare-Si
・ Rotating coating device: Mk-V 2 (made by TEL)
・ Rotation speed (maximum speed) and rotation time of the semiconductor wafer after dropping the polyimide coating solution: 1500 to 2500 rpm and 18 seconds

図１〜図３に示すように、実施例は比較例に比べて膜厚の厚いポリイミド膜を形成することができた。詳細には、２度目のポリイミド塗布液を滴下した後の半導体ウエハの回転速度を１２００ｒｐｍ以上１６００ｒｐｍ以下とすることにより、比較例に比べてポリイミド膜の膜厚を厚くすることができ、且つ２μｍのレンジに入った膜厚均一性の良いポリイミド膜を得ることができた。   As shown in FIGS. 1 to 3, the example was able to form a thicker polyimide film than the comparative example. Specifically, by setting the rotation speed of the semiconductor wafer after dropping the polyimide coating solution for the second time to 1200 rpm or more and 1600 rpm or less, the thickness of the polyimide film can be increased compared to the comparative example, and 2 μm A polyimide film with good film thickness uniformity in the range could be obtained.

本発明の実施例によるポリイミド膜の平均膜厚（AVE）及びポリイミド膜の膜厚の最も厚い部分と最も薄い部分との差(RANGE)それぞれと半導体ウエハの回転数との関係を示す図。The figure which shows the relationship between the average film thickness (AVE) of the polyimide film by the Example of this invention, the difference (RANGE) of the thickest part and the thinnest part of a polyimide film, and the rotation speed of a semiconductor wafer. 本発明の実施例によるポリイミド膜の膜厚と半導体ウエハ上に位置（POSITION）との関係を示すグラフ。The graph which shows the relationship between the film thickness of the polyimide film by the Example of this invention, and a position (POSITION) on a semiconductor wafer. 比較例によるポリイミド膜の膜厚と半導体ウエハ上に位置（POSITION）との関係を示すグラフ。The graph which shows the relationship between the film thickness of the polyimide film by a comparative example, and a position (POSITION) on a semiconductor wafer. ポリイミド膜を塗布する方法を説明する断面図。Sectional drawing explaining the method of apply | coating a polyimide film.

符号の説明Explanation of symbols

１１…回転軸、１２…保持部、１３…半導体ウエハ、１４…ノズル、１５…ポリイミド塗布液   DESCRIPTION OF SYMBOLS 11 ... Rotary shaft, 12 ... Holding part, 13 ... Semiconductor wafer, 14 ... Nozzle, 15 ... Polyimide coating liquid

Claims (4)

半導体ウエハの表面上に１度目のポリイミド塗布液を塗布し、
前記半導体ウエハを回転させ、前記半導体ウエハの全表面上に前記１度目のポリイミド塗布液を行き渡らせることにより、前記半導体ウエハの表面上に第１のポリイミド膜を形成し、
前記第１のポリイミド膜の表面上に２度目のポリイミド塗布液を塗布し、
前記半導体ウエハを回転させ、前記第１のポリイミド膜の全表面上に前記２度目のポリイミド塗布液を行き渡らせることにより、前記第１のポリイミド膜の表面上に第２のポリイミド膜を形成する工程を有する半導体装置の製造方法であって、
前記２度目のポリイミド塗布液を塗布した後に前記半導体ウエハを回転させる際の回転速度は、前記１度目のポリイミド塗布液を塗布した後に前記半導体ウエハを回転させる際の回転速度より遅いことを特徴とする半導体装置の製造方法。 Apply the first polyimide coating solution on the surface of the semiconductor wafer,
By rotating the semiconductor wafer and spreading the first polyimide coating solution over the entire surface of the semiconductor wafer, a first polyimide film is formed on the surface of the semiconductor wafer,
Apply a second polyimide coating solution on the surface of the first polyimide film,
Forming the second polyimide film on the surface of the first polyimide film by rotating the semiconductor wafer and spreading the second polyimide coating solution over the entire surface of the first polyimide film; A method of manufacturing a semiconductor device having
The rotation speed when rotating the semiconductor wafer after applying the second polyimide coating liquid is slower than the rotation speed when rotating the semiconductor wafer after applying the first polyimide coating liquid. A method for manufacturing a semiconductor device. 請求項１において、前記２度目のポリイミド塗布液を塗布した後に前記半導体ウエハを回転させる際の回転速度は１２００ｒｐｍ以上１６００ｒｐｍ以下であり、
前記工程によって前記半導体ウエハの表面上に形成された前記第１及び第２のポリイミド膜の全体の平均膜厚は１２．５μｍ以上１８μｍ以下であることを特徴とする半導体装置の製造方法。 In claim 1, the rotation speed when rotating the semiconductor wafer after applying the second polyimide coating solution is 1200 rpm or more and 1600 rpm or less,
A method of manufacturing a semiconductor device, wherein the average film thickness of the first and second polyimide films formed on the surface of the semiconductor wafer by the step is 12.5 μm or more and 18 μm or less. 請求項２において、前記第１及び第２のポリイミド膜の全体の膜厚は、最も厚い部分の膜厚と最も薄い部分の膜厚との差が２μｍ以下であることを特徴とする半導体装置の製造方法。   3. The semiconductor device according to claim 2, wherein the total thickness of the first and second polyimide films is such that the difference between the thickness of the thickest portion and the thickness of the thinnest portion is 2 μm or less. Production method. 請求項１乃至３のいずれか一項において、前記半導体ウエハの表面上に１度目のポリイミド塗布液を塗布する前に、前記半導体ウエハ上にパッシベーション膜を形成する工程を具備することを特徴とする半導体装置の製造方法。   4. The method according to claim 1, further comprising: forming a passivation film on the semiconductor wafer before applying a first polyimide coating solution on the surface of the semiconductor wafer. 5. A method for manufacturing a semiconductor device.
JP2008132807A 2008-05-21 2008-05-21 Method of manufacturing semiconductor apparatus Withdrawn JP2009283593A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008132807A JP2009283593A (en) 2008-05-21 2008-05-21 Method of manufacturing semiconductor apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008132807A JP2009283593A (en) 2008-05-21 2008-05-21 Method of manufacturing semiconductor apparatus

Publications (1)

Publication Number Publication Date
JP2009283593A true JP2009283593A (en) 2009-12-03

Family

ID=41453767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008132807A Withdrawn JP2009283593A (en) 2008-05-21 2008-05-21 Method of manufacturing semiconductor apparatus

Country Status (1)

Country Link
JP (1) JP2009283593A (en)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0235733A (en) * 1988-07-25 1990-02-06 Nec Corp Formation of bump electrode
JPH0738234A (en) * 1993-07-23 1995-02-07 Nec Ibaraki Ltd Application of polyimide varnish coating
JPH07183296A (en) * 1993-12-22 1995-07-21 Hitachi Chem Co Ltd Manufacture of semiconductor device
JPH1116810A (en) * 1997-06-23 1999-01-22 Dainippon Screen Mfg Co Ltd Method and device for applying liquid coat
JPH11219948A (en) * 1998-01-30 1999-08-10 Fuji Electric Co Ltd Formation of coating film
JP2000141670A (en) * 1998-11-03 2000-05-23 Samsung Electronics Co Ltd Method for forming-thick film layer of microinjecting device
JP2005209696A (en) * 2004-01-20 2005-08-04 Seiko Epson Corp Manufacturing method of semiconductor device
JP2009207997A (en) * 2008-03-04 2009-09-17 Toshiba Corp Rotation applying method and rotation applying apparatus

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0235733A (en) * 1988-07-25 1990-02-06 Nec Corp Formation of bump electrode
JPH0738234A (en) * 1993-07-23 1995-02-07 Nec Ibaraki Ltd Application of polyimide varnish coating
JPH07183296A (en) * 1993-12-22 1995-07-21 Hitachi Chem Co Ltd Manufacture of semiconductor device
JPH1116810A (en) * 1997-06-23 1999-01-22 Dainippon Screen Mfg Co Ltd Method and device for applying liquid coat
JPH11219948A (en) * 1998-01-30 1999-08-10 Fuji Electric Co Ltd Formation of coating film
JP2000141670A (en) * 1998-11-03 2000-05-23 Samsung Electronics Co Ltd Method for forming-thick film layer of microinjecting device
JP2005209696A (en) * 2004-01-20 2005-08-04 Seiko Epson Corp Manufacturing method of semiconductor device
JP2009207997A (en) * 2008-03-04 2009-09-17 Toshiba Corp Rotation applying method and rotation applying apparatus

Similar Documents

Publication Publication Date Title
JP4745358B2 (en) Spin coating method and spin coating apparatus
US6764965B2 (en) Method for improving the coating capability of low-k dielectric layer
US8236705B2 (en) Deposition of viscous material
US9633834B2 (en) Photolithographic method for forming a coating layer
JP2008251810A (en) Coating method of coating liquid, and manufacturing method of semiconductor device
JPH07249626A (en) Manufacture of semiconductor device
JP2006253207A (en) Method of coating, method of manufacturing semiconductor device
JP5874481B2 (en) Formation method of through electrode
JP2009283593A (en) Method of manufacturing semiconductor apparatus
US6613700B2 (en) Method for spin coating high viscosity materials on silicon wafers
US9793111B2 (en) Spin coating method and manufacturing method of electronic component
JP5143395B2 (en) Method for forming resist on wafer
US10062566B2 (en) Semiconductor device, display substrate, display device, and method for manufacturing polysilicon film
US10665547B2 (en) Semiconductor device and method of manufacturing thereof
JP2005021803A (en) Method for rotary coating and method for manufacturing semiconductor device using it
US20040102054A1 (en) Method of removing edge bead during the manufacture of an integrated circuit
JP2009283713A (en) Resist application method, and method for manufacturing semiconductor device
JPH10275772A (en) Film-forming method
KR100807048B1 (en) Formation method of SOG film
JP3281588B2 (en) Spin coating method
US6667249B1 (en) Minimizing coating defects in low dielectric constant films
JP2012069823A (en) Manufacturing method of semiconductor device
KR100972055B1 (en) Fabricating Method of Semiconductor Die
TW498452B (en) Method for improving the coating capability of low-k dielectric layer
JPH11219948A (en) Formation of coating film

Legal Events

Date Code Title Description
A621 Written request for application examination

Effective date: 20110420

Free format text: JAPANESE INTERMEDIATE CODE: A621

A977 Report on retrieval

Effective date: 20111208

Free format text: JAPANESE INTERMEDIATE CODE: A971007

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111213

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20120130