JP2009272323A - Semiconductor substrate grinding machine and grinding method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor substrate grinding machine that performs constant-speed grinding processing and constant-pressure grinding processing in a series of operations, makes a processed alteration layer thin, and improves processing efficiency. <P>SOLUTION: A slide base 8 sliding relatively to a base 6 is provided over the base 6, and at least one of a tool 3 and a grinding mechanism 5 is mounted on the slide base 8, which is further provided with is provided a constant-speed moving mechanism 12 which moves the tool and/or grinding mechanism at a constant speed to grind a semiconductor mechanism and a constant-pressure moving mechanism 13 which presses the semiconductor substrate 2 and a grinding member 4 with constant pressure to grind the semiconductor substrate 2. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a semiconductor substrate grinding machine and a grinding method.

  Conventionally, as a method for efficiently improving the flatness by aligning the thickness of a semiconductor substrate, a grindstone (grinding grindstone) containing abrasive grains is rotated and pressed against the semiconductor substrate, and the surface of the semiconductor substrate is ground with the grindstone abrasive grains. The grinding process which scrapes off is common.

  As a method of pressing the grindstone against the semiconductor substrate, a method of pressing at a constant speed with a driving force of a motor (for example, refer to Patent Document 1) and a method of pressing at a constant pressure using a weight load or the like It has been known.

  In a method of pressing a grindstone against a semiconductor substrate at a constant speed, for example, a semiconductor substrate grinder 61 shown in FIGS. 6A and 6B is used. In this semiconductor substrate grinding machine 61, the ball screw 62 is rotated at a constant speed by a motor 63, the slide base 65 on which the grinding mechanism 64 is placed is moved by the rotation of the ball screw 62, and the jig 67 fixed to the base 66 is moved. Grinding is performed by pressing the grindstone 69 of the grinding mechanism 64 against the semiconductor substrate 68 at a constant speed.

  However, when grinding is performed by a method of pressing at a constant speed in this way, the surface of the semiconductor substrate 68 may be deeply scratched because it is forcibly sent even when the sharpness of the grindstone 69 is lowered.

  As a grinding method to prevent the occurrence of deep scratches, for example, instead of pressing at a constant speed for grinding, the force for pressing the grindstone is controlled by the weight of the weight, and the semiconductor substrate and the grindstone are kept at a constant pressure. There is a method of grinding by pressing.

  In a method of pressing a grindstone against a semiconductor substrate with a constant pressure, for example, a semiconductor substrate grinder 71 shown in FIGS. 7A and 7B is used. In this semiconductor substrate grinding machine 71, a pin 73 is provided on the side surface of the slide base 72, one end of the wire 74 is fixed to the pin 73, the wire 74 is hung on a fixed pulley (guide roll) 75, and the other end of the wire 74 is A weight 76 is connected to the.

  In this semiconductor substrate grinding machine 71, when the ball screw 78 is rotated by the motor 77 and the nut 79 advances by the rotation of the ball screw 78, the slide base 72 follows the nut 79 because it is pulled by the weight of the weight 76. When the grinding mechanism 82 placed on the slide base 72 is brought close to the jig 81 fixed on the base 80 and the grindstone 83 and the semiconductor substrate 84 come into contact with each other, the nut 79 and the slide base 72 are separated, and (working pressure) = (weight) Thus, grinding is performed with a constant processing pressure.

  Usually, the work-affected layer (damaged layer) formed by grinding is removed by polishing in the next step. As a polishing method, a method is generally employed in which a semiconductor substrate is pressed against a glass polishing surface plate, and an abrasive is supplied onto the polishing surface plate while sliding the semiconductor substrate to polish the semiconductor substrate.

  However, since the processing amount per unit time (thickness that can be ground) is small in polishing processing, if the work-affected layer formed by grinding processing is thick, the amount (thickness) to be removed by polishing processing increases. It costs money. Therefore, it is preferable that the work-affected layer formed by grinding is as thin as possible from the viewpoint of manufacturing efficiency of the semiconductor substrate.

Japanese Patent Application Laid-Open No. 11-307489

  As a method of thinning the work-affected layer formed by grinding, a method of pressing with a constant pressure is effective, but there is a problem that the processing time varies depending on the state of the grindstone and the processing efficiency is lowered. In terms of processing time management and processing efficiency, a method of pressing at a constant speed is more effective than a method of pressing at a constant pressure.

  However, heretofore, there has been no grinder capable of performing constant speed grinding and constant pressure grinding with a single grinding machine.

  Accordingly, an object of the present invention is to grind a semiconductor substrate by which a grinding process at a constant speed and a grinding process at a constant pressure can be performed by a series of operations, a work-affected layer is thinned, and a machining efficiency is improved. It is to provide a machine and a grinding method.

  The present invention was devised to achieve the above object, and a grinding mechanism for holding a jig for holding a semiconductor substrate on a base and a grinding member facing the semiconductor substrate held by the jig. And at least one of the jig and the grinding mechanism is movably provided toward the other, and the semiconductor substrate and the grinding member are rotated and brought into contact with each other to grind the semiconductor substrate. In the semiconductor substrate grinding machine, a slide base provided slidably with respect to the base is provided on the base, and at least one of the jig and the grinding mechanism is mounted on the slide base, and A constant speed moving mechanism for moving the jig and / or the grinding mechanism at a constant speed to grind the semiconductor substrate, and pressing the semiconductor substrate and the grinding member with a constant pressure. Serial and constant pressure moving mechanism for grinding the semiconductor substrate is a semiconductor substrate grinder provided on the slide base.

  The present invention connects the jig or the grinding mechanism and the constant pressure moving mechanism, and constrains the slide base to the constant speed moving mechanism when moving at a constant speed, from the constant speed moving mechanism to the constant pressure moving mechanism. A semiconductor substrate grinding machine provided with a switching mechanism that opens the slide base when switching.

  In the present invention, the constant speed moving mechanism for moving the slide base at a constant speed is a semiconductor substrate grinder comprising a ball screw mechanism and a motor for rotating the ball screw.

  The present invention is the semiconductor substrate grinding machine, wherein the constant pressure moving mechanism includes a weight connected to the slide base via a wire, and a constant pulley that is held by the base and on which the wire is wound.

  The present invention is the semiconductor substrate grinding machine in which the slide base is provided with position detecting means, and the constant speed moving mechanism is switched to the constant pressure moving mechanism according to the position of the slide base detected by the position detecting means.

  The present invention provides semiconductor substrate grinding in which a semiconductor substrate that is rotatably held by a jig and a grinding member that is rotatably held by a grinding mechanism so as to face the semiconductor substrate are brought into contact with each other to grind the semiconductor substrate. In the method, either the jig or the grinding mechanism is moved at a constant speed toward the other by a constant speed moving mechanism provided on the base, and the semiconductor substrate and the grinding member are moved by the constant speed moving mechanism. A semiconductor substrate grinding method of grinding the semiconductor substrate by further pressing the semiconductor substrate and the grinding member with a constant pressure by a constant pressure moving mechanism connected to the jig or the grinding mechanism. is there.

  In the present invention, after grinding a thickness of 80 to 95% of the grinding thickness of the semiconductor substrate by the constant speed moving mechanism, the semiconductor substrate and the grinding member are further pressed by the constant pressure moving mechanism to perform the remaining grinding. This is a method for grinding a semiconductor substrate.

  According to the present invention, by performing a series of operations of grinding at a constant speed and grinding at a constant pressure, it is possible to suppress the generation of scratches on the machined surface and increase the machining efficiency, thereby producing a semiconductor substrate. Efficiency can be improved.

  Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.

  FIG. 1 is a side view of a semiconductor substrate grinding machine according to the present embodiment.

  As shown in FIG. 1, a semiconductor substrate grinding machine 1 includes a jig (work shaft) 3 that rotatably holds a semiconductor substrate 2 and a grinding mechanism (grind wheel shaft) that rotatably holds a grindstone 4 as a grinding member. 5 is mainly provided. The jig 3 and the grinding mechanism 5 are arranged so that the semiconductor substrate 2 and the grindstone 4 face each other.

  The jig 3 includes a substrate holding portion 3a that rotatably holds the semiconductor substrate 2, and a jig main body 3b having a drive motor (not shown) that rotates the substrate holding portion 3a.

  The grinding mechanism 5 includes a grindstone holding portion 5a that rotatably holds the grindstone 4, and a grinding mechanism main body 5b having a drive motor (not shown) that rotates the grindstone holding portion 5a. As the grindstone 4, for example, a cup-type grindstone may be used.

  The jig body 3 b is placed on a surface plate 7 provided on the base 6, and the grinding mechanism body 5 b is placed on a slide base 8 provided on the base 6.

  On the base 6, rails 9 are provided along the moving direction of the grinding mechanism 5, and the slide base 8 is provided on a plurality of guides 10 provided so as to be movable along the rails 9. As a result, the slide base 8 and the grinding mechanism 5 placed on the slide base 8 are movable (slidable) toward the jig 3.

  The slide base 8 is provided with a linear scale 11 as position detection means for detecting the position of the slide base 8.

  As the linear scale 11, for example, a photoelectric type that detects a position by counting light pulses received by a light receiving element with a light emitting element and a light receiving element facing each other with a glass on which metal is deposited at a constant pitch. It is good to use. Further, as the linear scale 11, it is preferable to use a linear scale that can detect the position with an accuracy of 0.1 μm.

  In the semiconductor substrate grinding machine 1, a constant speed moving mechanism 12 for moving the grinding mechanism 5 at a constant speed is provided on the base 6, and the slide base 8 on which the grinding mechanism 5 is placed has a constant speed moving mechanism. After the semiconductor substrate 2 and the grindstone 4 are pressed at 12 to grind the semiconductor substrate 2, a constant pressure moving mechanism 13 for further pressing and grinding the semiconductor substrate 2 and the grindstone 4 with a constant pressure is connected.

  As shown in FIG. 2A, the constant speed moving mechanism 12 includes a ball screw mechanism that includes a ball screw 14 and a nut 15 that meshes with the ball screw 14, and a motor 16 that rotates the ball screw 14. The ball screw 14 is arranged below the slide base 8 along the moving direction of the slide base 8, and the nut 15 is provided so as to move along the ball screw 14 by the rotation of the ball screw 14. A coupling 17 for transmitting torque from the motor shaft of the motor 16 to the ball screw 14 is provided between the motor 16 and the ball screw 14.

  The nut 15 is formed with a tongue piece 15a extending upward from the rear end portion (the lower side (base 6 side) in FIG. 2), and the bottom surface of the slide base 8 is used for inserting the tongue piece 15a of the nut 15 therein. A recess 18 is formed. The length of the concave portion 18 in the moving direction (the left-right direction in the figure) is formed sufficiently larger than the length of the tongue piece 15a in the moving direction. Further, the width of the concave portion 18 (the width in the drawing paper direction) is formed substantially the same as the width of the tongue piece 15a.

  As shown in FIG. 1, the constant pressure moving mechanism 13 includes a weight 23 connected to the slide base 8 via a wire 22, and a constant pulley (guide roll) 24 that is held by the base 6 and on which the wire 22 is wound. Become.

  A pin 25 is provided on the side surface of the slide base 8, and one end of the wire 22 is connected to the pin 25. The wire 22 extends forward (leftward in the drawing) from the pin 25, is wound around a fixed pulley 24 provided in front of the slide base 8, and a weight 23 is connected to the other end of the wire 22.

  The constant speed moving mechanism 12 is provided with an air cylinder 19 as a switching mechanism for switching from the constant speed moving mechanism 12 to the constant pressure moving mechanism 13.

  As shown in FIGS. 2A and 2B, the air cylinder 19 includes an air cylinder main body 19a and a clamp 19b that extends from the air cylinder main body 19a so as to extend and contract.

  The air cylinder 19 has a rear end surface of the slide base 8 in a state where the clamp 19b is inserted into the through hole 20 that penetrates from the rear end surface R of the slide base 8 to the recess 18 and the through hole 21 that penetrates the tongue piece 15a of the nut 15. Fixed to R. A cap 19c having a flange portion having a diameter larger than that of the through hole 21 of the nut 15 is attached to the tip of the clamp 19b of the air cylinder 19.

  When grinding with the constant speed moving mechanism 12, the air cylinder 19 holds the clamp 19b in a short state and presses the nut 15 against the rear surface of the recess 18 as shown in FIG. The slide base 8 is restrained by the nut 15. When switching from the constant speed moving mechanism 12 to the constant pressure moving mechanism 13, the clamp 19 b is extended and the slide base 8 is released from the nut 15 as shown in FIG.

  Next, the semiconductor substrate grinding method according to the present embodiment will be described together with the operation of the semiconductor substrate grinding machine 1.

  First, the semiconductor substrate 2 is set on the substrate holding portion 3a of the jig 3, and the grindstone 4 is set on the grindstone holding portion 5a of the grinding mechanism 5, and the semiconductor substrate 2 and the grindstone 4 are relatively rotated. At this time, as shown in FIG. 2A, the air cylinder 19 holds the clamp 19 b in a short state and presses the nut 15 against the surface behind the recess 18 to restrain the slide base 8 to the nut 15.

  Thereafter, the motor 16 rotates the ball screw 14 at a predetermined rotational speed, and moves the nut 15 forward (leftward in the figure) at a predetermined speed. Since the slide base 8 is restrained by the nut 15, the slide base 8 and the grinding mechanism 5 placed on the slide base 8 move toward the jig 3 at a predetermined speed.

  In this state, the semiconductor substrate 2 and the grindstone 4 are brought into contact with each other, and the semiconductor substrate 2 is ground at a predetermined speed.

  At this time, the thickness of grinding the semiconductor substrate 2 by the constant speed moving mechanism 12 is 80 to 95% of the grinding thickness (total grinding thickness) of the semiconductor substrate 2. This is because if the thickness of grinding the semiconductor substrate 2 by the constant speed moving mechanism 12 is less than 80%, the thickness to be ground by the constant pressure moving mechanism 13 becomes thick, and it takes time to grind and the processing efficiency decreases. Therefore, if it exceeds 95%, scratches generated on the surface of the semiconductor substrate 2 when the semiconductor substrate 2 is ground by the constant speed moving mechanism 12 may remain after grinding. More desirably, the thickness of grinding the semiconductor substrate 2 by the constant speed moving mechanism 12 is about 90% of the grinding thickness of the semiconductor substrate 2.

  The processing amount (grinding thickness) in the constant speed moving mechanism 12 and the processing amount (grinding thickness) in the constant pressure moving mechanism 13 and the switching position thereof may be controlled by the position of the slide base 8 detected by the linear scale 11.

  After the semiconductor substrate 2 is ground by the constant speed moving mechanism 12, the slide base 8 is released from the nut 15 by the air cylinder 19, and the constant speed moving mechanism 12 is switched to the constant pressure moving mechanism 13.

  When the clamp 19 b of the air cylinder 19 is extended and the slide base 8 is released from the nut 15, a gap is generated in front of the nut 15. When the nut 15 is advanced in this state, the nut 15 and the slide base 8 are separated. The slide base 8 is pulled forward only by the weight of the weight 23. As a result, (processing pressure) = (weight of weight), and grinding can be performed by pressing the grindstone 4 against the semiconductor substrate 2 at a constant pressure (processing pressure).

  After completion of grinding, the ball screw 14 is reversely rotated by the motor 16 and the nut 15 is moved backward, whereby the slide base 8 and the grinding mechanism 5 are retracted, and the rotation of the semiconductor substrate 2 and the grindstone 4 is stopped. Thereafter, when the semiconductor substrate 2 is removed from the jig 3, the semiconductor substrate 2 whose surface is ground is obtained.

  As described above, in the semiconductor substrate grinding machine 1, the grinding mechanism 5 is provided movably toward the jig 3, and the constant speed moving mechanism 12 for moving the grinding mechanism 5 at a constant speed is provided on the base 6, After the semiconductor substrate 2 and the grindstone 4 are pressed against the grinding mechanism 5 by the constant speed moving mechanism 12 to grind the semiconductor substrate 2, the constant pressure movement for further pressing and grinding the semiconductor substrate 2 and the grindstone 4 with constant pressure. The mechanism 13 is connected.

  Thereby, grinding at a constant speed and grinding at a constant pressure can be performed in a series of operations. Therefore, the work-affected layer of the semiconductor substrate 2 after grinding can be thinned, and the processed surface can be finished without any scratches. Further, the processing efficiency can be improved, and the manufacturing efficiency of the semiconductor substrate 2 can be improved. it can.

  Further, in the semiconductor substrate grinding machine 1, after grinding the thickness of 80 to 95% of the grinding thickness of the semiconductor substrate 2 by the constant speed moving mechanism 12, the semiconductor substrate 2 and the grindstone 4 are further pressed by the constant pressure moving mechanism 13. The remaining grinding is done. Thereby, processing efficiency can be improved further.

  Next, another embodiment of the present invention will be described.

  A semiconductor substrate grinding machine 31 shown in FIGS. 3A and 3B has basically the same configuration as the semiconductor substrate grinding machine 1 in FIG. 1, and is provided integrally with the nut 15. 8, and an air cylinder 33 as a constant pressure moving mechanism provided on the air cylinder mounting table 32.

  In the semiconductor substrate grinding machine 31, as shown in FIG. 3A, when grinding with the constant speed moving mechanism 12, the slide base 8 is moved forward by pressing the front surface of the recess 18 with the tongue piece 15 a of the nut 15. Move at a constant speed.

  In the semiconductor substrate grinding machine 31, as shown in FIG. 3B, when switching from the constant speed moving mechanism 12 to the constant pressure moving mechanism, the motor 16 is stopped to stop the movement of the nut 15, and the air cylinder 33 is stopped. The clamp 33b is extended and the slide base 8 is pushed forward with a constant pressure. Thereby, grinding can be performed by pressing the grindstone 4 against the semiconductor substrate 2 with a constant pressure.

  According to the semiconductor substrate grinding machine 31, since a weight, a wire, a fixed pulley, and the like are not necessary, grinding processing at a constant speed and grinding processing at a constant pressure can be performed by a series of operations with a simpler configuration.

  In the present embodiment, the air cylinder 33 is used as the constant pressure moving mechanism. However, any mechanism that presses the slide base 8 with a constant pressure may be used. For example, a hydraulic cylinder may be used.

  In the above embodiment, the jig 3 is fixed on the surface plate 7 and the grinding mechanism 5 is provided on the slide base 8 to be movable. However, the grinding mechanism 5 is fixed on the surface plate 7 and the jig 3 is It may be provided on the slide base 8 so as to be movable.

  Examples of the present invention and comparative examples will be described below.

(Example)
Using the semiconductor substrate grinding machine 1 of FIG. 1, the semiconductor substrate 2 was ground under the following conditions. A semiconductor substrate 2 having a diameter of 5.08 cm (2 inches) was used.

Whetstone size: φ150 cup type whetstone Whetstone mesh size: # 600 (particle size: φ20 to φ30 μm)
Grinding wheel rotation speed: 1000rpm
Workpiece (semiconductor substrate) rotation speed: 50 rpm
Total grinding amount (thickness): 100 μm
(The grinding amount of 0 μm to 90 μm was ground at a feeding speed of 0.2 μm / s, and the grinding amount of 90 μm to 100 μm was ground with a weight (pressure) of 20 N (0.036 N / mm ² ))
FIG. 4 shows an image measured by the scanning white interference method on the surface of the semiconductor substrate 2 after grinding and the grinding time.

(Comparative Example 1)
The semiconductor substrate was ground under the following conditions using the semiconductor substrate grinder 61 of FIG. A semiconductor substrate having a diameter of 5.08 cm (2 inches) was used.

Whetstone size: φ150 cup type whetstone Whetstone mesh size: # 600 (particle size: φ20 to φ30 μm)
Grinding wheel rotation speed: 1000rpm
Workpiece (semiconductor substrate) rotation speed: 50 rpm
Feeding speed: 0.2 μm / s
Grinding amount (thickness): 100 μm
FIG. 5 shows a measurement image of the surface of the semiconductor substrate after grinding by the scanning white interference method and grinding time.

(Comparative Example 2)
The semiconductor substrate was ground under the following conditions using the semiconductor substrate grinder 71 of FIG. A semiconductor substrate having a diameter of 5.08 cm (2 inches) was used.

Whetstone size: φ150 cup type whetstone Whetstone mesh size: # 600 (particle size: φ20 to φ30 μm)
Grinding wheel rotation speed: 1000rpm
Work rotation speed: 50rpm
Weight (pressure): 20 N (0.036 N / mm ² )
Grinding amount (thickness): 100 μm
FIG. 5 shows a measurement image of the surface of the semiconductor substrate after grinding by the scanning white interference method and grinding time.

  As shown in FIG. 5, the surface of the semiconductor substrate of Comparative Example 1 ground at a constant speed has scratches, whereas the surface of the semiconductor substrate of Comparative Example 2 ground at a constant pressure has deep scratches. No uniform grinding marks were observed on the entire surface. In Comparative Example 1, processing is completed at 500 seconds / 100 μm as set, whereas in Comparative Example 2, the processing time is 600 to 800 seconds / 100 μm, and the processing time is not stable.

  Therefore, grinding with a constant pressure (Comparative Example 2) is suitable for the ground surface, but it can be said that grinding at a constant speed (Comparative Example 1) is suitable for managing the processing time.

  On the other hand, as shown in FIG. 4, in the embodiment according to the present invention in which processing at a constant speed and processing at a constant pressure are performed in a series of operations, the surface of the semiconductor substrate 2 after grinding has no deep scratches. The processing time was 505 to 510 seconds / 100 μm, and grinding was possible without much difference from the case of grinding at a constant speed (Comparative Example 1).

  From the above results, it can be seen that according to the present invention, the ground semiconductor substrate can be finished to a scratch-free processed surface, the processing time can be shortened, and the processing efficiency can be increased.

It is a side view of the semiconductor substrate grinding machine of this invention. FIG. 2A is an enlarged cross-sectional view of the main part during constant speed grinding of the semiconductor substrate grinder of FIG. 1, and FIG. 2B is an enlarged cross-sectional view of the main part during constant pressure grinding. FIG. 3A is an enlarged cross-sectional view of a main part during constant speed grinding of a semiconductor substrate grinder according to another embodiment of the present invention, and FIG. 3B is an enlarged cross-sectional view of the main part during constant pressure grinding. . It is a measurement image by the scanning white interference method of the semiconductor substrate surface ground with the semiconductor substrate grinding machine of this invention. It is the measurement image by the scanning white interference method of the semiconductor substrate surface ground with the conventional semiconductor substrate grinding machine. FIG. 6A is a side view of a conventional semiconductor substrate grinding machine, and FIG. 6B is an enlarged cross-sectional view of the main part thereof. Fig.7 (a) is a side view of the conventional semiconductor substrate grinding machine, and FIG.7 (b) is the principal part expanded sectional view.

Explanation of symbols

1 Semiconductor substrate grinding machine 2 Semiconductor substrate 3 Jig 4 Grinding wheel (grinding member)
5 Grinding mechanism 6 Base 8 Slide base 12 Constant speed moving mechanism 13 Constant pressure moving mechanism

Claims (7)

A jig for holding the semiconductor substrate and a grinding mechanism for holding a grinding member facing the semiconductor substrate held by the jig are provided on the base, and at least one of the jig and the grinding mechanism is provided. In a semiconductor substrate grinder that grinds the semiconductor substrate by providing the semiconductor substrate and the grinding member while rotating relative to each other, so as to be movable toward the other side,
A slide base that is slidable relative to the base is provided on the base, and at least one of the jig and the grinding mechanism is mounted on the slide base, and the jig and / or the grinding is further mounted. A constant speed moving mechanism for grinding the semiconductor substrate by moving the mechanism at a constant speed; and a constant pressure moving mechanism for grinding the semiconductor substrate by pressing the semiconductor substrate and the grinding member with a constant pressure. A semiconductor substrate grinder provided on a slide base.   When connecting the jig or the grinding mechanism and the constant pressure moving mechanism, constraining the slide base during constant speed movement to the constant speed moving mechanism, and switching from the constant speed moving mechanism to the constant pressure moving mechanism, The semiconductor substrate grinding machine according to claim 1, further comprising a switching mechanism that opens the slide base.   3. The semiconductor substrate grinding machine according to claim 2, wherein the constant speed moving mechanism for moving the slide base at a constant speed includes a ball screw mechanism and a motor for rotating the ball screw.   4. The semiconductor substrate grinding machine according to claim 2, wherein the constant pressure moving mechanism includes a weight connected to the slide base via a wire, and a constant pulley that is held by the base and on which the wire is wound.   5. The semiconductor according to claim 1, wherein the slide base is provided with position detection means, and the constant-speed movement mechanism is switched to the constant-pressure movement mechanism according to the position of the slide base detected by the position detection means. Substrate grinding machine. In a semiconductor substrate grinding method for grinding a semiconductor substrate by contacting a semiconductor substrate rotatably held by a jig and a grinding member rotatably held by a grinding mechanism so as to face the semiconductor substrate,
Either one of the jig or the grinding mechanism is moved at a constant speed toward the other by a constant speed moving mechanism provided on the base, and the semiconductor substrate and the grinding member are pressed by the constant speed moving mechanism. Then, after grinding the semiconductor substrate, the semiconductor substrate and the grinding member are further pressed and ground with a constant pressure by the constant pressure moving mechanism connected to the jig or the grinding mechanism. Method.   The ground of 80 to 95% of the grinding thickness of the semiconductor substrate is ground by the constant speed moving mechanism, and then the semiconductor substrate and the grinding member are further pressed by the constant pressure moving mechanism to perform the remaining grinding. 6. The semiconductor substrate grinding method according to 6.

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