JP2009267363A - Perovskite oxide film, ferroelectric, piezoelectric element, and liquid discharging device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a non-lead-based perovskite oxide film which contains a Bi-based perovskite oxide normally hardly forming a perovskite type structure or deteriorating in crystallinity, hardly generates a leakage current, and has superior ferroelectric performance (piezoelectric performance). <P>SOLUTION: The perovskite oxide film is formed on a perovskite oxide single-crystal substrate and contains the perovskite oxide represented by general formula (P1) of A(B<SB>x</SB>, C<SB>1-x</SB>)O<SB>3</SB>. In general formula (P1), 0<x<1.0, A is an A-site element consisting principally of Bi, B is a B-site element consisting principally of an element forming a perovskite structure with A (except Fe), and C is at least one kind of B-site element not or hardly forming a perovskite structure with A. A to C are each one kind of or a plurality of kinds of metal elements. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a perovskite oxide film, a ferroelectric film including the same, a ferroelectric element using the ferroelectric film, and a liquid discharge apparatus.

  Perovskite oxides have ferroelectricity and are used for applications such as piezoelectric elements and switching elements. For example, lead zirconate titanate (PZT) is known as a perovskite oxide that exhibits good piezoelectric properties. PZT is a ferroelectric material having spontaneous polarization when no electric field is applied, and is said to exhibit high piezoelectric performance at and near the morphotropic phase boundary (MPB). However, there is a growing demand for lead-free piezoelectric materials that take into account greater piezoelectric characteristics and the environmental impact of lead-based materials, and development of new lead-free materials for perovskite oxides is underway.

In the development of new lead-free materials, some perovskite-type oxides that are theoretically considered to have high properties cannot have a perovskite-type crystal structure by ordinary high-temperature firing at normal pressure, but several GPa There are some which become perovskite type oxides by firing under a high pressure exceeding. For example, Bi-based perovskite oxides are theoretically considered to be lead-free piezoelectric materials with high piezoelectric properties (ferroelectric properties), but most of them are difficult to take a perovskite-type structure at high temperature firing at normal pressure. Some cannot be taken. At present, the only Bi-based perovskite oxide that can be produced at normal pressure in bulk ceramics is BiFeO _3. For example, BiAlO ₃ can only be bulk ceramics having a perovskite structure by high-temperature and high-pressure synthesis at 6 GPa and 1000 ° C. ( Non-patent document 1). However, firing under high pressure has a complicated apparatus configuration, and the process is not easy.

  On the other hand, downsizing of each device is underway in the trend of high density and high integration of devices. Piezoelectric elements are also being made into thin-film elements, and perovskite-type oxide films that can be formed by sputtering, sol-gel, CVD, etc. and have good element characteristics are being studied.

Under such circumstances, the above-mentioned theoretically high characteristics are considered, but until now a material that cannot have a perovskite structure unless it is a special technique such as a high-pressure synthesis method, or a thin film such as a sputtering method, cannot be obtained. Attempts have been made to achieve this. However, Bi-based oxide films differ depending on the composition, but when used alone, many of them have a perovskite structure at normal pressure or crystallinity deteriorates. Therefore, a Bi-based oxide, which cannot take a perovskite-type crystal structure unless it is fired at a high pressure, is converted into a solid solution with BiFeO ₃ that easily forms a perovskite structure in a thin film by bulk firing at normal pressure. Attempts have been made to create mold crystal structures. Non-Patent Document 2 reports a Bi (Fe, Al) O ₃ film having a perovskite structure in which BiAlO ₃ is dissolved in BiFeO ₃ in an amount of 0 to 50% on a SrTiO ₃ perovskite substrate. Non-Patent Document 3 reports a Bi (Fe, Co) O ₃ film having a perovskite structure in which BiCoO ₃ is dissolved in BiFeO ₃ in an amount of 0-33% on a SrTiO ₃ perovskite substrate. ing.
J. Zylberberg et al, ISAF2007 proceedings, 28PS-B13 M. Okada et al, Japanese J. of Applied Physics, Vol. 43, 9B, p.6609-6645, 2004 S. Yasui et al, Japanese J. of Applied Physics, Vol. 46, 10B, p. 6948-6951, 2007

However, Bi (Fe, Al) described in Non-Patent Document 2 _{O 3} film, Bi (Fe, Al) described in Non-Patent Document 3 _{O 3} film, the Bi (Fe, Co) Non-Patent Document 3 _{O 3} film In any case, the Fe content in the B site is 50% or more. Since Fe is a transition metal, its valence is likely to change, and when used in an element driven by applying an electric field, a leakage current is likely to occur. Especially when driving at room temperature or low frequency, the element characteristics due to the leakage current May decrease.

  The present invention has been made in view of the above circumstances, and generally includes a Bi-based perovskite oxide that is difficult or impossible to obtain a perovskite structure, is less prone to leakage current, and has excellent ferroelectric performance (piezoelectric performance). An object of the present invention is to provide a lead-free perovskite oxide film.

  The present invention also provides a piezoelectric film containing a perovskite oxide that has been theoretically considered to have a high piezoelectric performance by realizing such a perovskite oxide film, but could not be manufactured at normal pressure, and An object of the present invention is to provide a provided piezoelectric element.

The first perovskite oxide film of the present invention is formed on a perovskite single crystal substrate and includes a perovskite oxide represented by the following general formula (P1).
A (B _x , C _1-x ) O ₃ (P1)
(Wherein 0 <x <1.0, A is an A site element containing Bi as a main component, B is a B site element containing an element having a perovskite structure with A as a main component (excluding Fe), C Is at least one B-site element that cannot or does not easily form a perovskite structure with A. Each of A to C is one or more metal elements, the total number of moles of A-site elements and the total of B-site elements. The ratio of the number of moles to the number of moles of oxygen atoms is normally 1: 3, but may be deviated from 1: 3 within a range where a perovskite structure can be taken.

The second perovskite oxide film of the present invention is formed on a perovskite single crystal substrate and includes a perovskite oxide represented by the following general formula (P2).
A (D _x , E _1-x ) O ₃ (P2)
(In the formula, 0 <x <0.5, A is an A site element containing Bi as a main component, D is a B site element containing Fe as a main component, and E cannot take a perovskite structure with A, Or at least one B-site element that is difficult to remove, wherein A, D, and E are each one or more metal elements, and the number of oxygen atoms in the total number of moles of the A-site element and the total number of moles of the B-site element (The ratio with respect to the number of moles is normally 1: 3, but may be deviated from 1: 3 within a range where a perovskite structure can be taken.)

The third perovskite oxide film of the present invention is formed on a perovskite single crystal substrate and contains a perovskite oxide represented by the following general formula (P3).
A (D _z , E _1-z ) O ₃ (P3)
(Wherein 0 <z <1.0, A is an A site element containing Bi as a main component, D is a B site element containing Fe as a main component, and E cannot take a perovskite structure with A, or At least one B-site element that is difficult to remove A, D, and E are each one or more metal elements, and the number of moles of oxygen atoms in the total number of moles of A-site elements and the total number of moles of B-site elements (The ratio to the standard is 1: 3 in each case, but may be deviated from 1: 3 within a range in which a perovskite structure can be taken.)

In the present specification, the “main component” means a component having a content of 80% by mass or more.
Further, in the present specification, “cannot take or difficult to take a perovskite structure” means that a perovskite structure cannot be realized when a sintered body is produced using a solid-phase sintering method at normal pressure, or In addition to the perovskite structure, this refers to those in which a different phase is confirmed. The perovskite structure at that time is evaluated by X-ray diffraction (XRD). In the present invention, the XRD measurement is performed by a 2θ / ω scan (θ · 2θ scan) using a Rigaku Ultima III and a standard Cu tube, and the film thickness is about 500 nm and is measured by a general method. Detailed conditions are as shown in Table 1.

  In the perovskite oxide film of the present invention, the B site element B is preferably Mn and / or Cr.

  The B site elements C and E are preferably at least one metal element having an ionic valence of 3, and the B site elements C and E are at least one selected from the group consisting of Al, Ga, and Co. It is preferable that the metal element. Further, it may contain at least one additive element selected from the group consisting of Mn, Cu, and Nb within a range where a perovskite structure can be taken.

According to the present invention, it is possible to provide a perovskite oxide film having a composition at or near the morphotropic phase boundary (MPB).
“Near MPB” is a region that undergoes phase transition when an electric field is applied.

Examples of the perovskite oxide film of the present invention include a ferroelectric film such as a piezoelectric film. Such a perovskite oxide film preferably includes a ferroelectric phase having crystal orientation.
In this specification, “having crystal orientation” or “being an orientation film” is defined as an orientation rate F measured by the Lottgering method being 80% or more.
The orientation rate F is represented by the following formula (i).
F (%) = (P−P0) / (1−P0) × 100 (i)
In formula (i), P is the ratio of the total reflection intensity from the orientation plane to the total reflection intensity. In the case of (001) orientation, P is the sum ΣI (00l) of the reflection intensity I (00l) from the (00l) plane and the sum ΣI (hkl) of the reflection intensity I (hkl) from each crystal plane (hkl). ({ΣI (00l) / ΣI (hkl)}). For example, in the case of (001) orientation in the perovskite crystal, P = I (001) / [I (001) + I (100) + I (101) + I (110) + I (111)].
P0 is P of a sample having a completely random orientation.
When the orientation is completely random (P = P0), F = 0%, and when the orientation is complete (P = 1), F = 100%.

The perovskite oxide film of the present invention which is a piezoelectric film preferably includes a ferroelectric phase having crystal orientation in a direction different from the spontaneous polarization axis direction.
The ferroelectric phase having crystal orientation in a direction different from the spontaneous polarization axis direction is a rhombohedral phase having crystal orientation in a substantially <100> direction, and a rhombohedral having crystal orientation in a substantially <110> direction. A crystal phase, a tetragonal phase having crystal orientation in a substantially <110> direction, a tetragonal phase having crystal orientation in a substantially <111> direction, an orthorhombic phase having crystal orientation in a substantially <100> direction, and It is preferable that the phase is at least one ferroelectric phase selected from the group consisting of orthorhombic phases having crystal orientation in a substantially <111> direction.
In this specification, “having crystal orientation in the substantially <abc> direction” is defined as the crystal orientation ratio F in that direction being 80% or more.

  The ferroelectric phase having crystal orientation in a direction different from the spontaneous polarization axis direction is such that at least part of the ferroelectric phase is applied by applying an electric field in a direction different from the spontaneous polarization axis direction of the ferroelectric phase. It is preferable that the material has a phase transition property.

  A piezoelectric element of the present invention comprises the perovskite oxide film of the present invention which is the above piezoelectric film, and an electrode for applying an electric field to the perovskite oxide film. .

  A liquid ejection apparatus of the present invention includes the above-described piezoelectric element of the present invention and a liquid ejection member provided adjacent to the piezoelectric element, the liquid ejection member including a liquid storage chamber in which liquid is stored; And a liquid discharge port through which the liquid is discharged from the liquid storage chamber in response to application of the electric field to the piezoelectric body.

In JP-A-2005-39166, in a piezoelectric element provided with a piezoelectric film made of a BiFeO ₃ film on a Si single crystal substrate, a magnetic metallic element ( 1 to 10%) or a piezoelectric element in which a metal element having a higher valence than Fe (1 to 30%) is substituted and dissolved. However, in Japanese Patent Application Laid-Open No. 2005-39166, there is no example of actually producing the BiFeO ₃ film after addition of the above elements, and it is unclear whether such a film has a perovskite structure, and the piezoelectric performance is also unclear.

In addition, in “Sc modified multiferroic BiFeO ₃ thin films prepared through a sol-gel process.”, SR Shannigrahi et al, Applied Physics Letter, Vol. 90, 022901, 2007, in order to improve the leakage characteristics of BiFeO ₃ , It has been reported that a Bi (Fe, Sc) O ₃ film having a perovskite structure in which BiScO ₃ is added to BiFeO ₃ at 10 mol%, 30 mol%, and 50 mol% is formed on a Si substrate. This document describes that a Bi (Fe, Sc) O ₃ film is formed on a Si substrate, and that when 50 mol% of Sc is added to the B site contains a heterogeneous phase rather than a perovskite single phase. As a result, Sc is not sufficiently added to obtain good leakage characteristics, and good ferroelectricity is not obtained.

  As described above, the perovskite-type oxide film of the present invention usually includes a Bi-based perovskite-type oxide which is difficult to take or cannot take a perovskite type structure, hardly causes leakage current, and has excellent ferroelectric performance (piezoelectric performance). It is a lead-free perovskite oxide film. Therefore, it is not described in Japanese Patent Application Laid-Open No. 2005-39166 and the above-mentioned S.R. Shannigrahi et al.

Furthermore, in Japanese Patent Application Laid-Open No. 2005-39166 and the above-mentioned SR Shannigrahi et al., A BiFeO ₃ film having a perovskite structure is substituted with another element as an additive element, and the perovskite structure cannot be taken or removed. There is no description or suggestion of using a solid solution with BiFeO ₃ to make a difficult Bi-based oxide into a perovskite structure.

The present invention provides a novel lead-free perovskite oxide film excellent in piezoelectric performance (ferroelectric performance). According to the present invention, a perovskite-type oxide having theoretically excellent piezoelectric performance (ferroelectric performance) can be obtained, but a Bi-based oxide that cannot or cannot easily take a perovskite-type structure at normal pressure alone is formed as a thin film. A perovskite oxide film can be obtained by solid solution with an oxide having a perovskite structure. In the perovskite type oxide film of the present invention, when BiFeO ₃ is used as an oxide that easily takes a perovskite type structure, the leakage characteristic is also improved by reducing the content of BiFeO ₃ that easily generates a leakage current. Become. Therefore, according to the present invention, it is possible to provide a lead-free perovskite oxide film that hardly generates a leak current and has excellent piezoelectric performance (ferroelectric performance).

"Perovskite oxide film"
The present invention includes a Bi-based oxide that easily forms a perovskite structure in a thin film, and a perovskite type that has a ferroelectric performance (piezoelectric performance) that is theoretically excellent in ferroelectric performance (piezoelectric performance) although it cannot or cannot be easily obtained at normal pressure. A novel Bi-based perovskite oxide film is realized by dissolving a Bi-based oxide that can be an oxide.

In the present specification, “normal pressure” means a pressure range in the vicinity of atmospheric pressure and a pressure range generally used in a thin film forming method. Piezoelectric thin film deposition methods are broadly classified into sputtering methods, pulsed laser deposition methods (PLD methods), chemical vapor deposition methods (CVD methods) and other liquid phase methods such as sol-gel methods. In the range of 10 ⁻⁴ to 10 ³ Pa (7.6 × 10 ⁻⁴ mTorr to 7.6 × 10 ³ mTorr) in the phase method, and under atmospheric pressure (about 10 ⁵ Pa (760 Torr)) in the liquid phase method. A film forming environment is common.

In the section of “Background Art”, Non-Patent Document 2 and the like indicate that BiFeO ₃ that tends to have a perovskite structure in a bulk firing and thin film at normal pressure and a perovskite-type crystal structure that cannot be taken alone at normal pressure. A Bi (Fe, Al) O ₃ film having a perovskite structure is obtained by dissolving a difficult Bi-based oxide in a solid solution, but since the Fe content in the B site is 50% or more, It has been stated that leakage current is likely to occur when used in an element driven by applying an electric field.

Also in the present invention, a novel Bi-based perovskite-type oxide film (hereinafter referred to as a new Bi-based perovskite-type oxide film) containing a Bi-based oxide that cannot or cannot easily take a perovskite-type crystal structure by a similar design technique alone at normal pressure. The present inventors have succeeded in reducing the occurrence of leakage current by reducing the content of BiFeO _{3 in} the novel Bi-based perovskite oxide film. In the present invention, even if the content of BiFeO ₃ that is liable to generate a leak current is less than 50%, the solid solution can be a perovskite oxide film, so that the leak current is hardly generated and the ferroelectric performance is excellent. A novel Bi-based perovskite oxide film can be provided.
The perovskite oxide film of the present invention is described in detail below.

The first perovskite oxide film of the present invention is formed on a perovskite single crystal substrate,
It contains a perovskite oxide represented by the following general formula (P1).
A (B _x , C _1-x ) O ₃ (P1)
(Wherein 0 <x <1.0, A is an A site element containing Bi as a main component, B is a B site element containing an element having a perovskite structure with A as a main component (excluding Fe), C Is at least one B-site element that cannot or does not easily form a perovskite structure with A. Each of A to C is one or more metal elements, the total number of moles of A-site elements and the total of B-site elements. The ratio of the number of moles to the number of moles of oxygen atoms is normally 1: 3, but may be deviated from 1: 3 within a range where a perovskite structure can be taken.

The second perovskite oxide film of the present invention is formed on a perovskite single crystal substrate and includes a perovskite oxide represented by the following general formula (P2).
A (D _x , E _1-x ) O ₃ (P2)
(In the formula, 0 <x <0.5, A is an A site element containing Bi as a main component, D is a B site element containing Fe as a main component, and E cannot take a perovskite structure with A, Or at least one B-site element that is difficult to remove, and A, D, and E are each one or more kinds of metal elements, and the total number of moles of oxygen atoms in the total number of moles of A-site elements and the total number of moles of B-site elements. (The ratio with respect to the number of moles is normally 1: 3, but may be deviated from 1: 3 within a range where a perovskite structure can be taken.)

In the present invention, a perovskite structure that cannot easily or hardly take a perovskite structure at normal pressure by itself is formed into a solid solution with a Bi-based perovskite oxide that easily forms a perovskite structure in a thin film. However, a perovskite single crystal substrate is used as the substrate so that the film to be formed can easily have a perovskite structure. In the present invention, the substrate is not particularly limited as long as it is a perovskite single crystal substrate, but it is preferable to select a material having good lattice matching with the film to be formed. Further, the case where a plurality of buffer layers (for example, LaNiO ₃ ) and lower electrodes (for example, SrRuO ₃ ), etc., which are lattice-matched, are stacked is also included. By using a substrate having lattice matching capable of epitaxial growth, a perovskite oxide epitaxial film having the same crystal orientation as that of the substrate can be obtained. For example, when the film is formed in such a manner that the (001) plane of BiXO ₃ is lattice-matched to the (001) plane of the substrate, nCs / mC is Cs when the lattice constant of the substrate is Cs and the lattice constant of BiXO ₃ is C. The material may be selected so that it falls within the range of 0.95 to 1.05 (n, m = 1 to 5). SrTiO ₃ , NdGaO ₃ , LaAlO _{3, and the} like are listed as substrates having good lattice matching with Bi-based oxides and capable of forming an epitaxial film. Among them, NdGaO ₃ having high lattice matching is more preferable.

Perovskite oxide represented by the general formula (P1) is a perovskite-type structure in thin films, Toridoku BiFeO ₃ other Bi-based oxide and (BiBO _3), a perovskite-type structure at normal pressure alone Although it is not or difficult to remove, it is a complex oxide of Bi-based oxide BiCO ₃ that can be a perovskite oxide that is theoretically excellent in ferroelectric performance.

In addition, the perovskite oxide represented by the general formula (P2) is a Bi-based oxide that can take a perovskite structure in a thin film and BiFeO ₃ that cannot take a perovskite structure at normal pressure alone, or Although it is difficult to remove, it is a complex oxide of Bi-based oxide BiEO ₃ that can be a perovskite oxide that is theoretically excellent in ferroelectric performance.

  In the general formulas (P1) and (P2), the A-site element A is mainly composed of Bi. That is, the A-site element A may be Bi alone or a composition in which a part of Bi is substituted with another element. Since Bi has a trivalent ionic valence, the substituting element is preferably trivalent, such as Nd.

In the general formula (P1), a Bi-based perovskite oxide BiBO ₃ that easily forms a perovskite structure in a thin film is not particularly limited as long as it is other than BiFeO _3. As the site element B, Mn and / or Cr are preferable.

On the other hand, in the general formula (P2), the B-site element D is mainly composed of Fe. BiFeO ₃ can take a perovskite structure even in bulk firing at normal pressure, and can easily take a perovskite structure even in a thin film.

Independently, a perovskite structure cannot be obtained or is difficult to remove at normal pressure, but the Bi-based oxide BiCO ₃ or BiEO ₃ that can be a perovskite oxide that is theoretically excellent in ferroelectric performance is not particularly limited. From the standpoint of safety, C and E preferably have a trivalent ionic valence, but may have a plurality of valences to the extent that the perovskite structure is maintained. The B site elements C and E are preferably at least one metal element selected from the group consisting of Al, Ga, and Co.

The present inventor has applied for a patent relating to a method for producing a perovskite oxide based on a novel material design method for a perovskite oxide having good piezoelectric performance and a perovskite oxide produced thereby (Japanese Patent Application). 2007-10185 (not disclosed at the time of filing this patent). Japanese Patent Application No. 2007-10185 describes that a lead-free perovskite oxide having an MPB composition and a composition in the vicinity thereof, which is mainly composed of Bi as an A site element, and excellent piezoelectric performance can be obtained. . However, in this patent, not only the MPB composition and the composition in the vicinity thereof, but also the composition that realizes the perovskite structure is not limited to the piezoelectric characteristics. As described in the “Background Art” section, when the A-site element is mainly composed of Bi, there are many cases where the perovskite structure is difficult to obtain at normal pressure or the crystallinity is deteriorated by itself although it varies depending on the composition. This tendency is also observed in the novel Bi-based oxides mentioned in Japanese Patent Application No. 2007-10185. In the present invention, a perovskite structure can be obtained by making a Bi-based oxide that cannot or does not easily have such a perovskite structure into a solid solution with a Bi-based oxide (for example, BiFeO ₃ ) that easily has a perovskite structure. Is possible. Therefore, according to the present invention, a novel Bi-based material including a Bi-based perovskite-type oxide, which has a theoretically excellent piezoelectric performance, but has been difficult to manufacture because it cannot have a perovskite structure by itself. A perovskite oxide film can be realized.

  In the formula (P1), the composition of the Bi-based oxide that can have a perovskite structure in the thin film, that is, x may be in the range of 0 <x <1.0, and 0.3 ≦ x <1.0. Preferably there is.

Further, even when the Bi-based oxide that can have a perovskite structure in the thin film is BiFeO ₃ , the composition of BiFeO ₃ , that is, x can be in the range of 0 <x <1.0 (general formula (P3)), as described above, since the ratio x of BiFeO ₃ is preferably lesser in terms of leakage characteristics, the composition x of BiFeO _3, by a range of 0 <x <0.5, leak A perovskite-type oxide film that hardly generates current and has excellent piezoelectric performance (ferroelectric performance) can be obtained (general formula (P2)). Also in this case, it is preferable that 0.3 ≦ x as in the case of the formula (P1). In particular, in the general formula (P2), it is preferable that a small amount of Mn is added from the viewpoint of improving the leakage characteristics, and further within the range where a perovskite structure can be taken, transition metal elements, Co, Cr, Cu, Nb Etc. may be added. A site element A, B site elements D and E in formula (P3) are the same as A, D and E in formula (P2) already exemplified.
A (D _z , E _1-z ) O ₃ (P3)
(Wherein 0 <z <1.0, A is an A site element containing Bi as a main component, D is a B site element containing Fe as a main component, and E cannot take a perovskite structure with A, or At least one B-site element that is difficult to remove A, D, and E are each one or more metal elements, and the number of moles of oxygen atoms in the total number of moles of A-site elements and the total number of moles of B-site elements (The ratio to the standard is 1: 3 in each case, but may be deviated from 1: 3 within a range in which a perovskite structure can be taken.)
In the present invention, the phase structure of the perovskite oxide represented by the general formulas (P1) to (P3) is not particularly limited. Therefore, there may be a two-phase mixed crystal structure in which the components of the perovskite type oxides represented by the general formulas (P1) to (P3) coexist, or each component is completely dissolved in one phase. There may be other structures.

In the use of the piezoelectric film, a two-phase mixed crystal structure in which each component coexists is preferable. For example, in the case of the perovskite oxide represented by the general formula (P2), the most stable crystal system of BiFeO ₃ is a rhombohedral crystal. Therefore, as BiEO ₃ , the most stable crystal system is other than the rhombohedral crystal. The crystal system is preferable. By setting it as such a mixed crystal structure, it can be set as the perovskite type oxide which has a composition of the morphotropic phase boundary (MPB) or its vicinity. For example, according to the study by the present inventors, it is presumed that BiAlO ₃ in which the B site element E is Al is the tetragonal crystal, and the MPB composition or a composition in the vicinity thereof can be obtained.

  The MPB composition and the vicinity thereof are said to exhibit high piezoelectric performance. In particular, in the electric field induced phase transition system disclosed in Japanese Patent Application Laid-Open No. 2007-116091 proposed by the present inventor, at least by applying an electric field. Since a part thereof has a property of phase transition to another ferroelectric phase having a different crystal system, a larger piezoelectric gain can be obtained.

  In a field-induced phase transition system, the ferroelectric phase in which the phase transition occurs preferably has a crystal orientation in a direction different from the direction of the spontaneous polarization axis, and substantially coincides with the direction of the spontaneous polarization axis after the phase transition. It is particularly preferable to have crystal orientation in the direction. By making the direction of electric field application substantially the same as the direction of the spontaneous polarization axis after the phase transition, the phase transition proceeds efficiently during the phase transition due to the “engineered domain effect” before the phase transition. The ratio of the remaining ferroelectric phase is reduced, and after the phase transition, the normal piezoelectric effect of the ferroelectric phase after the phase transition is effectively expressed, so that a large amount of strain displacement is stable. can get. Regarding “engineered domain effect”, see “Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystals”, SEPark et al, JAP, 82, 1804 (1997) ”. See 2007-116091.

  Therefore, in the use of the piezoelectric film, the perovskite type oxide film of the present invention is an MPB suitable for the electric field induced phase transition system in which the perovskite type oxides represented by the general formulas (P1) to (P3) are used. It is preferable to have a composition or a composition in the vicinity thereof, and it is preferable to include a ferroelectric phase having crystal orientation.

  Furthermore, the ferroelectric phase in which the phase transition occurs preferably has a crystal orientation in a direction different from the spontaneous polarization axis direction, and the crystal orientation in a direction substantially coincident with the spontaneous polarization axis direction after the phase transition. It is particularly preferable to have

The spontaneous polarization axis of the ferroelectric is as follows.
Tetragonal system: <001>, orthorhombic system: <110>, rhombohedral system: <111>
In order to make the electric field application direction substantially coincide with the spontaneous polarization axis direction after the phase transition, the ferroelectric phase of the first component and / or the second component that undergo the phase transition is made a diamond having crystal orientation in a substantially <100> direction. A rhombohedral phase having crystal orientation in a substantially <110> direction, a tetragonal phase having crystal orientation in a substantially <110> direction, a tetragonal phase having crystal orientation in a substantially <111> direction, Any one of an orthorhombic phase having crystal orientation in the approximately <100> direction and an orthorhombic phase having crystal orientation in the approximately <111> direction may be used.

  For applications such as ferroelectric memory, the perovskite oxide film is preferably a ferroelectric film having electric field-strain hysteresis with good squareness.

  The perovskite oxide film of the present invention can be formed by, for example, the PLD method. FIG. 1 shows a schematic diagram of a general PLD apparatus 50. In the PLD method, when a laser beam L is irradiated from a pulse laser 51 onto a target T placed on a rotatable target holder 52, plasma is generated in a direction substantially perpendicular to the surface of the target T (plume P). The component of T reaches the substrate 11 in a plasma or molecular state. Next, crystal nucleation and crystal growth occur for each laser pulse while migrating on the substrate 11, and this process is repeated to grow the crystal. When the film 13 to be formed is an oxide film, the inside of the vacuum chamber 53 needs to be in a low oxygen partial pressure atmosphere by the oxygen introduction part 54 and the decompression part 55. Therefore, the film characteristics and crystal structure obtained by the plasma state and oxygen partial pressure change.

  The present inventor considered that since the bismuth-based compound has a high vapor pressure and easily volatilizes, the volatilization of Bi affects the crystal growth and it becomes difficult to take a perovskite structure. As described above, atoms and molecules that have reached the substrate are migrated on the substrate 11 and crystal nucleation and crystal growth are repeated for each laser pulse. Therefore, if the laser pulse frequency is too high, the migrated atoms may arrive and deposit before the perovskite structure and form a heterogeneous phase. If the laser pulse frequency is too low, the film formation rate may be increased. Slow and unable to secure film thickness. In particular, when an element such as Fe, which tends to have a perovskite structure with Bi, is reduced, a different phase is easily formed.

 Therefore, in the PLD method, the present inventor reduced volatilization of bismuth compounds by optimizing the oxygen partial pressure, and further reduced the ratio of different phases by controlling the laser pulse frequency and optimizing the plasma state. And even if the ratio of Fe in the B site was less than 50%, the perovskite structure was successfully achieved.

For example, a perovskite single-phase Bi (Fe, Al) O ₃ perovskite oxide is formed on a SrRuO ₃ electrode formed on a SrTiO ₃ single crystal substrate having a perovskite structure under conditions such as an oxygen partial pressure of 50 mmTorr and a laser pulse frequency of 5 Hz. It was confirmed by evaluation by XRD that a film was obtained (see Example 1).

 As described above, the perovskite oxide film of the present invention can be formed by controlling the oxygen partial pressure and the laser pulse frequency in the PLD method under the condition that the film to be formed can have a perovskite structure.

 The thickness of the perovskite oxide film of the present invention is not particularly limited, and may be about 500 nm to several tens of μm.

As described above, the present invention provides a novel lead-free perovskite oxide film excellent in piezoelectric performance (ferroelectric performance). According to the present invention, a perovskite oxide having a theoretically excellent piezoelectric performance (ferroelectric performance) can be obtained, but a Bi-based oxide that is difficult to take a perovskite structure at normal pressure or has poor crystallinity alone. A perovskite oxide film can be obtained by solid-dissolving with a thin film of an oxide that easily has a perovskite structure. Moreover, in the perovskite type oxide film of the present invention, when BiFeO ₃ is used as an oxide that easily takes a perovskite type structure, the leakage characteristic is also good by reducing the content of BiFeO ₃ that easily generates a leak current. It will be a thing. Therefore, according to the present invention, it is possible to provide a lead-free perovskite oxide film that hardly generates a leak current and has excellent piezoelectric performance (ferroelectric performance).

"Ferroelectric elements (piezoelectric elements), inkjet recording heads"
With reference to the drawings, the structure of a piezoelectric element according to an embodiment of the present invention and an ink jet recording head (liquid ejecting apparatus) including the same will be described. FIG. 2 is a sectional view (a sectional view in the thickness direction of the piezoelectric element) of the ink jet recording head. In order to facilitate visual recognition, the scale of the constituent elements is appropriately changed from the actual one.

  A piezoelectric element 1 shown in FIG. 2 is an element in which a lower electrode 12, a ferroelectric film (piezoelectric film) 13 of the above embodiment, and an upper electrode 14 are sequentially laminated on the surface of a substrate 11. The ferroelectric film 13 is a lead-free (Bi-based) perovskite oxide film that hardly generates leak current and has excellent piezoelectric performance (ferroelectric performance), and is formed in the thickness direction by the lower electrode 12 and the upper electrode 14. An electric field is applied.

  The substrate 11 is a perovskite single crystal substrate as described above, and preferably has good lattice matching with the perovskite oxide film of the present invention. The details are as described in the embodiment of the perovskite oxide film of the present invention.

There is no particular restriction on the major component of lower electrode 12, a perovskite-type oxide are preferred, include LaNiO ₃ and SrRuO ₃ or the like. The lower electrode 12 is preferably an epitaxial film obtained by epitaxial growth on the substrate 11.

The main component of the upper electrode 14 is not particularly limited, and examples thereof include metals such as Au, Pt, Ir, IrO ₂ , RuO ₂ , LaNiO ₃ , and SrRuO ₃ , and combinations thereof. In addition, electrode materials generally used in semiconductor processes such as Al, Ta, Cr, and Cu can also be used.

  The thicknesses of the lower electrode 12 and the upper electrode 14 are not particularly limited and are preferably 50 to 500 nm. The film thickness of the ferroelectric film 13 is not particularly limited, but is preferably 500 nm or more in order to obtain good piezoelectric performance.

In the piezoelectric actuator 2, a vibration plate 16 that vibrates by expansion and contraction of a ferroelectric film 13 is attached to the back surface of the substrate 11 of the piezoelectric element 1. The piezoelectric actuator 2 is also provided with a control means 15 such as a drive circuit for controlling the driving of the piezoelectric element 1. The ink jet recording head (liquid ejecting apparatus) 3 is roughly composed of an ink chamber (liquid storing chamber) 21 in which ink is stored on the back surface of the piezoelectric actuator 2 and an ink discharging port (in which ink is discharged from the ink chamber 21 to the outside). An ink nozzle (liquid storage and discharge member) 20 having a liquid discharge port 22 is attached.
In the ink jet recording head 3, the electric field strength applied to the piezoelectric element 1 is increased / decreased to expand / contract the piezoelectric element 1, thereby controlling the ejection of the ink from the ink chamber 21 and the ejection amount.

  Instead of attaching the diaphragm 16 and the ink nozzle 20 which are members independent of the substrate 11, a part of the substrate 11 may be processed into the diaphragm 16 and the ink nozzle 20. For example, when the substrate 11 is made of a laminated substrate such as an SOI substrate, the substrate 11 is etched from the back side to form the ink chamber 21, and the diaphragm 16 and the ink nozzle 20 are formed by processing the substrate itself. Can do.

  Since the piezoelectric element 1 includes the perovskite oxide film (ferroelectric film) 13 of the present invention, it is considered that the piezoelectric element 1 has theoretically high piezoelectric performance, but cannot be manufactured at normal pressure. In addition, the piezoelectric element includes a perovskite oxide, hardly generates leak current, has excellent piezoelectric performance (ferroelectric performance), and has a low environmental load.

"Inkjet recording device"
With reference to FIG. 3 and FIG. 4, a configuration example of an ink jet recording apparatus including the ink jet recording head 3 of the above embodiment will be described. 3 is an overall view of the apparatus, and FIG. 4 is a partial top view.

  The illustrated ink jet recording apparatus 100 includes a printing unit 102 having a plurality of ink jet recording heads (hereinafter simply referred to as “heads”) 3K, 3C, 3M, and 3Y provided for each ink color, and each head 3K, An ink storage / loading unit 114 that stores ink to be supplied to 3C, 3M, and 3Y, a paper feeding unit 118 that supplies recording paper 116, a decurling unit 120 that removes curling of the recording paper 116, and a printing unit An adsorption belt conveyance unit 122 that conveys the recording paper 116 while maintaining the flatness of the recording paper 116, and a print detection unit that reads a printing result by the printing unit 102. 124 and a paper discharge unit 126 that discharges printed recording paper (printed matter) to the outside.

  The heads 3K, 3C, 3M, and 3Y that form the printing unit 102 are the ink jet recording heads 3 of the above-described embodiment.

  In the decurling unit 120, heat is applied to the recording paper 116 by the heating drum 130 in the direction opposite to the curl direction, and the decurling process is performed.

  In the apparatus using roll paper, as shown in FIG. 3, a cutter 128 is provided at the subsequent stage of the decurling unit 120, and the roll paper is cut into a desired size by this cutter. The cutter 128 includes a fixed blade 128A having a length equal to or larger than the conveyance path width of the recording paper 116, and a round blade 128B that moves along the fixed blade 128A. The fixed blade 128A is provided on the back side of the print. The round blade 128B is arranged on the print surface side with the conveyance path interposed therebetween. In an apparatus using cut paper, the cutter 128 is unnecessary.

  The decurled and cut recording paper 116 is sent to the suction belt conveyance unit 122. The suction belt conveyance unit 122 has a structure in which an endless belt 133 is wound between rollers 131 and 132, and at least portions facing the nozzle surface of the printing unit 102 and the sensor surface of the printing detection unit 124 are horizontal ( Flat surface).

  The belt 133 has a width that is wider than the width of the recording paper 116, and a plurality of suction holes (not shown) are formed on the belt surface. An adsorption chamber 134 is provided at a position facing the nozzle surface of the printing unit 102 and the sensor surface of the print detection unit 124 inside the belt 133 that is stretched between the rollers 131 and 132. The recording paper 116 on the belt 133 is sucked and held by suctioning at 135 to make a negative pressure.

  When the power of a motor (not shown) is transmitted to at least one of the rollers 131 and 132 around which the belt 133 is wound, the belt 133 is driven in the clockwise direction in FIG. 3 and is held on the belt 133. The recording paper 116 is conveyed from left to right in FIG.

  Since ink adheres to the belt 133 when a borderless print or the like is printed, the belt cleaning unit 136 is provided at a predetermined position outside the belt 133 (an appropriate position other than the print region).

  A heating fan 140 is provided on the upstream side of the printing unit 102 on the paper conveyance path formed by the suction belt conveyance unit 122. The heating fan 140 heats the recording paper 116 by blowing heated air onto the recording paper 116 before printing. Heating the recording paper 116 immediately before printing makes it easier for the ink to dry after landing.

  The printing unit 102 is a so-called full line type head in which line type heads having a length corresponding to the maximum paper width are arranged in a direction orthogonal to the paper feed direction (main scanning direction) (see FIG. 4). Each of the print heads 3K, 3C, 3M, and 3Y is a line-type head in which a plurality of ink discharge ports (nozzles) are arranged over a length exceeding at least one side of the maximum-size recording paper 116 targeted by the ink jet recording apparatus 100. It is configured.

  Heads 3K, 3C, 3M, and 3Y corresponding to the respective color inks are arranged in the order of black (K), cyan (C), magenta (M), and yellow (Y) from the upstream side along the feeding direction of the recording paper 116. ing. A color image is recorded on the recording paper 116 by ejecting the color ink from each of the heads 3K, 3C, 3M, 3Y while conveying the recording paper 116.

  The print detection unit 124 includes a line sensor that images the droplet ejection result of the print unit 102 and detects ejection defects such as nozzle clogging from the droplet ejection image read by the line sensor.

  A post-drying unit 142 including a heating fan or the like for drying the printed image surface is provided at the subsequent stage of the print detection unit 124. Since it is preferable to avoid contact with the printing surface until the ink after printing is dried, a method of blowing hot air is preferred.

  A heating / pressurizing unit 144 is provided downstream of the post-drying unit 142 in order to control the glossiness of the image surface. The heating / pressurizing unit 144 presses the image surface with a pressure roller 145 having a predetermined surface irregularity shape while heating the image surface, and transfers the irregular shape to the image surface.

The printed matter obtained in this manner is outputted from the paper output unit 126. It is preferable that the original image to be printed (printed target image) and the test print are discharged separately. In the ink jet recording apparatus 100, there is provided sorting means (not shown) for switching the paper discharge path in order to select the print product of the main image and the print product of the test print and send them to the discharge units 126A and 126B. It has been.
When the main image and the test print are simultaneously printed on a large sheet of paper, the cutter 148 may be provided to separate the test print portion.
The ink jet recording apparatus 100 is configured as described above.

(Design changes)
The present invention is not limited to the above-described embodiment, and the design can be changed as appropriate without departing from the spirit of the present invention.

Embodiments according to the present invention will be described.
Example 1
A (100) SrRuO ₃ lower electrode having a thickness of 0.2 μm was formed on the (100) SrTiO ₃ single crystal substrate surface by the PLD method. Next, Bi _1.1 Fe _0.3 Al _0.7 O ₃ was used as the target, and in the PLD method, the laser intensity was 300 mJ, the laser pulse frequency was 5 Hz, the oxygen partial pressure was 50 mmTorr, the substrate-target distance was 50 mm, and the target rotation speed was 9 The film was formed for 100 minutes under the conditions of _0.7 rpm and substrate temperature of 585 ° C. to form a BiFe _0.3 Al _0.7 O ₃ thin film having a thickness of 700 nm.

  The results of X-ray diffraction (XRD) measurement of the target and the obtained piezoelectric film are shown in FIGS. In the XRD of the target shown in FIG. 5, no peak attributed to the perovskite structure is seen, but in FIG. 6, a peak is seen at almost the same location as the peak of the substrate, and the (100) preferred orientation of the perovskite single phase is confirmed.

(Example 2)
A BiFe _0.4 Al _0.6 O ₃ thin film having a thickness of 700 nm was formed in the same manner as in Example 1 except that the composition of the target was changed to Bi _1.1 Fe _0.4 Al _0.6 O ₃ . The results of X-ray diffraction (XRD) measurement of the target and the obtained piezoelectric film are shown in FIGS. In the XRD of the target shown in FIG. 7 (a), no peak attributed to the perovskite structure is observed, but in FIG. 8 (a), a peak is observed at almost the same location as the substrate peak as in Example 1. (100) preferential orientation of the perovskite single phase was confirmed.

Next, the leakage current characteristics of the obtained film were evaluated. The leakage current characteristics were evaluated using Agilent 4155C with a step width of 0.3V. The result is shown in FIG. 9 together with the result of a 700 nm thick BiFeO ₃ film formed under the same conditions. In FIG. 9, a large leakage current is generated up to ± 50 kV / cm in the BiFeO ₃ film, whereas the generation of leakage current is remarkably reduced in the BiFe _0.4 Al _0.6 O ₃ thin film. It has been shown. From FIG. 9, it was confirmed that the perovskite oxide film of the present invention has good leak characteristics.

(Example 3)
A (100) SrRuO ₃ lower electrode having a thickness of 0.2 μm was formed on the (100) SrTiO ₃ single crystal substrate surface by the PLD method. Next, Bi _1.1 Fe _0.75 Co _0.25 O ₃ was used as the target, and in the PLD method, the laser intensity was 350 mJ, the laser pulse frequency was 5 Hz, the oxygen partial pressure was 50 mmTorr, the substrate-target distance was 50 mm, and the target rotation speed was 9 The film was formed for 100 minutes under the conditions of 0.7 rpm and substrate temperature of 560 ° C. to form a BiFe _0.75 Co _0.25 O ₃ thin film having a thickness of 300 to 400 nm.

  FIG. 10 shows the result of X-ray diffraction (XRD) measurement of the obtained piezoelectric film. As shown in FIG. 10, in the obtained piezoelectric film, a peak was observed at substantially the same location as the peak of the substrate, and the (100) preferential orientation of the perovskite single phase was confirmed.

Example 4
BiFe ₀ having a film thickness of 300 to 400 nm was prepared in the same manner as in Example 3 except that a small amount of Mn was added to the B site and the target composition was changed to Bi _1.1 Fe _0.675 Co _0.225 Mn _0.10 O _{3. A .675} Co _0.225 Mn _0.10 O ₃ thin film was formed. A voltage was applied to the obtained piezoelectric film, and bipolar polarization-electric field characteristics (PE hysteresis characteristics) were measured. When measurement was carried out under the condition of frequency 10 KHz (temperature 80 K) and the maximum applied electric field set to V = 2500 kV / cm, good ferroelectricity could be confirmed as shown in FIG.

(Comparative Example 1)
A BiAlO ₃ thin film having a thickness of 700 nm was formed in the same manner as in Example 1 except that Bi _1.1 AlO ₃ was used as a target.

The results of X-ray diffraction (XRD) measurement of the target and the obtained BiAlO ₃ thin film are shown in FIGS. 7B and 8B, respectively. As shown, the peak attributable to a perovskite structure in the target and BiAlO ₃ thin film co is not observed, the BiAlO ₃ thin film was not able to realize a perovskite structure.

  The ferroelectric film of the present invention includes a piezoelectric actuator mounted on an ink jet recording head, a magnetic recording / reproducing head, a MEMS (Micro Electro-Mechanical Systems) device, a micro pump, an ultrasonic probe, and a ferroelectric memory. It can be preferably used for ferroelectric elements such as.

Schematic showing the device configuration of the pulse laser deposition device 1 is a cross-sectional view of an essential part showing the structure of a piezoelectric element according to an embodiment of the present invention and an ink jet recording head (liquid ejecting apparatus) including the same 2 is a diagram illustrating a configuration example of an ink jet recording apparatus including the ink jet recording head of FIG. Partial top view of the ink jet recording apparatus of FIG. XRD result of film formation target of Example 1 _BiFe 0.3 _Al 0.7 _{O 3} film XRD results of Example 1 XRD results of film formation targets of Example 2 and Comparative Example 1 XRD results of BiFe _0.4 Al _0.6 O ₃ film of Example 2 and Comparative Example 1 BiAlO ₃ film Figure shows the leakage characteristic of _BiFe 0.4 _Al 0.6 _{O 3} film and BiFeO ₃ film of Example 2 XRD result of Bi _1.0 Fe _0.75 Co _0.25 O ₃ film of Example 3 It shows a PE hysteresis characteristic of _BiFe 0.675 _Co 0.225 _{Mn 0.10} O ₃ film of Example 4

1 Piezoelectric element 3, 3K, 3C, 3M, 3Y Inkjet recording head (liquid ejection device)
12, 14 Electrode 13 Perovskite oxide film (ferroelectric film, piezoelectric film)
20 Ink nozzle (liquid storage and discharge member)
21 Ink chamber (liquid storage chamber)
22 Ink ejection port (liquid ejection port)
100 Inkjet recording device

Claims (19)

Deposited on a perovskite single crystal substrate,
A perovskite oxide film comprising a perovskite oxide represented by the following general formula (P1):
A (B _x , C _1-x ) O ₃ (P1)
(In the formula, 0 <x <1.0, A is an A site element containing Bi as a main component, B is a B site element containing an element having a perovskite structure with A as a main component (excluding Fe), and C is At least one B-site element that cannot or cannot easily form a perovskite structure with A. Each of A to C is one or more kinds of metal elements, the total number of moles of A-site elements and the total number of moles of B-site elements. The ratio of the oxygen atom to the number of moles of oxygen is typically 1: 3, but may be deviated from 1: 3 within a range where a perovskite structure can be taken.) Deposited on a perovskite single crystal substrate,
A perovskite oxide film comprising a perovskite oxide represented by the following general formula (P2):
A (D _x , E _1-x ) O ₃ (P2)
(Wherein 0 <x <0.5, A is an A site element containing Bi as a main component, D is a B site element containing Fe as a main component, and E cannot take a perovskite structure with A, or At least one B-site element that is difficult to remove A, D, and E are each one or more metal elements, and the number of moles of oxygen atoms in the total number of moles of A-site elements and the total number of moles of B-site elements. (The ratio to the number is typically 1: 3, but may be deviated from 1: 3 within a range where a perovskite structure can be taken.) Deposited on a perovskite single crystal substrate,
A perovskite oxide film comprising a perovskite oxide represented by the following general formula (P3):
A (D _z , E _1-z ) O ₃ (P3)
(Wherein 0 <z <1.0, A is an A site element containing Bi as a main component, D is a B site element containing Fe as a main component, and E cannot take a perovskite structure with A, or At least one B-site element that is difficult to remove A, D, and E are each one or more metal elements, and the number of moles of oxygen atoms in the total number of moles of A-site elements and the total number of moles of B-site elements (The ratio to the standard is 1: 3 in each case, but may be deviated from 1: 3 within a range where a perovskite structure can be taken.)   The perovskite oxide film according to claim 1, wherein the B site element B is Mn and / or Cr.   The perovskite oxide film according to claim 1 or 4, wherein the B site element C is at least one metal element having an ionic valence of 3.   5. The perovskite oxide film according to claim 1, wherein the B site element C is at least one metal element selected from the group consisting of Al, Ga, and Co. 6.   4. The perovskite oxide film according to claim 2, wherein the B site element E is at least one metal element having an ionic valence of 3.   4. The perovskite oxide film according to claim 2, wherein the B site element E is at least one metal element selected from the group consisting of Al, Ga, and Co.   The perovskite oxide film according to any one of claims 1 to 8, comprising at least one additive element selected from the group consisting of Mn, Cu, and Nb within a range in which a perovskite structure can be obtained.   The perovskite oxide film according to any one of claims 1 to 9, which has a composition at or near a morphotropic phase boundary.   The perovskite oxide film according to claim 1, wherein the perovskite oxide film is a piezoelectric film.   The perovskite oxide film according to claim 11, wherein the perovskite oxide film is a ferroelectric film.   The perovskite oxide film according to claim 11 or 12, comprising a ferroelectric phase having crystal orientation.   14. The perovskite oxide film according to claim 13, comprising a ferroelectric phase having crystal orientation in a direction different from the spontaneous polarization axis direction. The ferroelectric phase having crystal orientation in a direction different from the direction of spontaneous polarization axis,
Rhombohedral phase having crystal orientation in the approximately <100> direction, rhombohedral phase having crystal orientation in the approximately <110> direction, tetragonal phase having crystal orientation in the approximately <110> direction, approximately <111 Selected from the group consisting of a tetragonal phase having crystal orientation in the> direction, an orthorhombic phase having crystal orientation in the <100> direction, and an orthorhombic phase having crystal orientation in the <111> direction. The perovskite oxide film according to claim 14, wherein the perovskite oxide film is at least one ferroelectric phase.   The ferroelectric phase having crystal orientation in a direction different from the spontaneous polarization axis direction is such that at least part of the ferroelectric phase is applied by applying an electric field in a direction different from the spontaneous polarization axis direction of the ferroelectric phase. The perovskite oxide film according to claim 14 or 15, which has a property of phase transition to another ferroelectric phase having a different crystal system.   A piezoelectric element comprising: the perovskite oxide film according to claim 11; and an electrode for applying an electric field to the perovskite oxide film.   17. A perovskite oxide film according to claim 11, and an electrode for applying an electric field to the perovskite oxide film, wherein the perovskite oxide film has a direction different from a spontaneous polarization axis direction. A piezoelectric element characterized in that a spontaneous polarization axis direction of the ferroelectric phase having crystal orientation in a direction is different from an electric field application direction by the electrode. The piezoelectric element according to claim 17 or 18,
A liquid ejection member provided adjacent to the piezoelectric element,
The liquid discharge member includes a liquid storage chamber in which liquid is stored, and a liquid discharge port through which the liquid is discharged from the liquid storage chamber in response to application of the electric field to the piezoelectric body. Liquid ejecting device.

Images