JP2009267071A5 - - Google Patents

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Publication number
JP2009267071A5
JP2009267071A5 JP2008114733A JP2008114733A JP2009267071A5 JP 2009267071 A5 JP2009267071 A5 JP 2009267071A5 JP 2008114733 A JP2008114733 A JP 2008114733A JP 2008114733 A JP2008114733 A JP 2008114733A JP 2009267071 A5 JP2009267071 A5 JP 2009267071A5
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JP
Japan
Prior art keywords
switching element
control element
semiconductor device
island
control
Prior art date
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Application number
JP2008114733A
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Japanese (ja)
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JP5132407B2 (en
JP2009267071A (en
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Publication date
Application filed filed Critical
Priority to JP2008114733A priority Critical patent/JP5132407B2/en
Priority claimed from JP2008114733A external-priority patent/JP5132407B2/en
Publication of JP2009267071A publication Critical patent/JP2009267071A/en
Publication of JP2009267071A5 publication Critical patent/JP2009267071A5/ja
Application granted granted Critical
Publication of JP5132407B2 publication Critical patent/JP5132407B2/en
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Claims (6)

スイッチング素子と、前記スイッチング素子を制御する制御素子とを備え、
前記スイッチング素子と前記制御素子とは同一のアイランドに実装され、
前記スイッチング素子は導電性固着材を介して前記アイランドに実装され、
前記制御素子は、裏面に貼着された絶縁シートおよび絶縁性固着材を介して、前記アイランドに実装されることを特徴とする半導体装置。
A switching element, and a control element for controlling the switching element,
The switching element and the control element are mounted on the same island,
The switching element is mounted on the island via a conductive fixing material,
The control device is mounted on the island through an insulating sheet and an insulating fixing material attached to the back surface.
前記スイッチング素子は裏面に主電極を備えることを特徴とする請求項1記載の半導体装置。   The semiconductor device according to claim 1, wherein the switching element includes a main electrode on a back surface. 前記制御素子は過熱保護部を備え、
前記制御素子は、前記アイランドを経由して前記スイッチング素子から熱エネルギーが伝導することで加熱され、
前記過熱保護部で検出された前記制御素子の温度が所定以上の時は、前記制御素子から前記スイッチング素子への制御信号の供給を遮断することを特徴とする請求項1または請求項2に記載の半導体装置。
The control element includes an overheat protection unit,
The control element is heated by conducting heat energy from the switching element via the island,
3. The supply of a control signal from the control element to the switching element is cut off when the temperature of the control element detected by the overheat protection unit is equal to or higher than a predetermined value. Semiconductor device.
前記絶縁性固着材は裾広がりの断面形状を備えることを特徴とする請求項1から請求項3の何れかに記載の半導体装置。 The semiconductor device according to claim 1, wherein the insulating fixing material has a cross-sectional shape that spreads out from the bottom. 前記制御素子の側面は前記絶縁性固着材により被覆されることを特徴とする請求項1から請求項4の何れかに記載の半導体装置。 The semiconductor device according to any one of claims 1 to 4, the side surface of the control element characterized in that it is covered by the insulating adhesive material. 前記スイッチング素子または前記制御素子と接続されて外部に突出する複数のリードを備え、
前記制御素子は、前記リードが整列する方向に対して前記スイッチング素子よりも前記アイランドの中央部付近に実装されることを特徴とする請求項1から請求項5の何れかに記載の半導体装置。
A plurality of leads connected to the switching element or the control element and projecting to the outside;
6. The semiconductor device according to claim 1 , wherein the control element is mounted closer to a center portion of the island than the switching element in a direction in which the leads are aligned.
JP2008114733A 2008-04-25 2008-04-25 Semiconductor device Active JP5132407B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008114733A JP5132407B2 (en) 2008-04-25 2008-04-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008114733A JP5132407B2 (en) 2008-04-25 2008-04-25 Semiconductor device

Publications (3)

Publication Number Publication Date
JP2009267071A JP2009267071A (en) 2009-11-12
JP2009267071A5 true JP2009267071A5 (en) 2011-05-26
JP5132407B2 JP5132407B2 (en) 2013-01-30

Family

ID=41392543

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008114733A Active JP5132407B2 (en) 2008-04-25 2008-04-25 Semiconductor device

Country Status (1)

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JP (1) JP5132407B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6227226B2 (en) * 2012-05-11 2017-11-08 株式会社デンソー Semiconductor device
US10833595B2 (en) * 2016-07-01 2020-11-10 Rohm Co., Ltd. Semiconductor device with upper and lower switching devices and isolation transformer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0438063U (en) * 1990-07-27 1992-03-31
JP2704342B2 (en) * 1992-04-03 1998-01-26 シャープ株式会社 Semiconductor device and manufacturing method thereof
JP3036256B2 (en) * 1992-10-06 2000-04-24 富士電機株式会社 Semiconductor device
JP3685585B2 (en) * 1996-08-20 2005-08-17 三星電子株式会社 Semiconductor package structure
KR100317648B1 (en) * 1998-08-26 2002-02-19 윤종용 Semiconductor device having die adhesively bonded by electrically insulating tape, method and apparatus for die bonding
KR100335481B1 (en) * 1999-09-13 2002-05-04 김덕중 Power device having multi-chip package structure
JP3989417B2 (en) * 2003-07-28 2007-10-10 シャープ株式会社 Power device

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