JP2009259336A - Semiconductor device and its control method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To stabilize data reading operation in a semiconductor device having a variable resistance memory device. <P>SOLUTION: The semiconductor device has a memory cell MC that stores data as a result of a state of a variable resistance included in the memory cell becoming either a first high resistance state or a first low resistance state, and has two storage modes of a first mode and a second mode depending on a level of a resistance value of the memory cell. When data is read out, in a case of the first mode, a potential of a bit line is boosted to a first potential higher than a reference potential, in a case of the second mode, the potential of the bit line is boosted to a second potential higher than the first potential, and data is read out by comparing the potential of the bit line with the reference potential. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a semiconductor device and a control method thereof, and more particularly, to a semiconductor device including a memory element that stores data according to a resistance value of a variable resistor and a control method thereof.

  In recent years, a memory using a variable resistor as a memory element has been developed as a next-generation memory that replaces a conventional memory such as a flash memory. The variable resistor can take two states, a high resistance state and a low resistance state, and can be changed to an arbitrary state by applying a voltage pulse of a predetermined condition. The memory element in the high resistance state is less likely to pass current, and the memory element in the low resistance state is more likely to pass current. Therefore, the state of the memory element can be determined by the magnitude of the read current flowing through the memory element. Examples of such a memory device include a PRAM (Phase change Random Access Memory) and a ReRAM (Resistive Random Access Memory).

Patent Document 1 discloses a PRAM memory device that can selectively operate as both a nonvolatile memory and a volatile memory. Japanese Patent Application Laid-Open No. 2004-260260 discloses two reading methods, a method of reading data while charging a bit line and a method of reading data after stopping the charging of the bit line when performing a memory reading test. Has been.
JP 2004-296076 A JP 11-167800 A

  In a next-generation memory using a variable resistor as a memory element, the resistance value of the variable resistor in a high resistance state may be set lower in order to shorten the data writing time. However, in such a case, the difference in resistance value between the high resistance state and the low resistance state becomes small, and there is a possibility that data reading becomes difficult.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a configuration and a method capable of stably reading data in a semiconductor device using a variable resistor as a memory element.

  The present invention provides a first mode in which the state of the variable resistance included in the memory cell is either the first high resistance state or the first low resistance state, and the state of the variable resistance is the first high resistance state. The memory cell that stores data in two modes: a second high resistance state having a lower resistance value and a second mode that is one of a second low resistance state corresponding to the second high resistance state. And when reading data from the bit line connected to the memory cell and the memory cell, the memory cell and the bit line are made non-conductive in the first period, and the first period following the first period A selection element that brings the memory cell and the bit line into a conductive state in a period of 2, and a potential of the bit line that is higher than a reference potential in the first mode in the first period. A voltage supply circuit for supplying a first voltage to be supplied and supplying a second voltage for boosting the potential of the bit line to a second potential higher than the first potential in the second mode; and in the second period And a reading circuit that reads data by comparing the potential of the bit line with the reference potential. The semiconductor device according to the present invention includes a voltage supply circuit that supplies two types of clamp voltages in accordance with the mode of the semiconductor device in a first period when reading data. As a result, even when the variable resistor is in the second high resistance state having a resistance value lower than that of the first high resistance state, data can be read stably.

  The present invention provides a memory cell that stores data when the state of a variable resistor included in the memory cell is either a high resistance state or a low resistance state, a bit line connected to the memory cell, and the bit line A first terminal connected to the bit line and a second terminal not connected to the bit line, the magnitude of the resistance value between the first terminal and the second terminal being the variable resistance A clamp element that is between a resistance value in the high resistance state and a resistance value in the low resistance state of the variable resistor, and when reading data from the memory cell, the memory cell and the bit in a first period A selection element for bringing the line into a non-conducting state and bringing the memory cell and the bit line into a conducting state in a second period following the first period; and the first period and the first period A first voltage supply circuit for supplying a first voltage for boosting the potential of the second terminal to a potential higher than a reference potential in the period; and in the second period, the potential of the bit line is set to the reference potential. A semiconductor device comprising: a reading circuit that reads data by comparison. In the semiconductor device according to the present invention, the magnitude of the resistance value between the first terminal and the second terminal is between the resistance value in the high resistance state of the variable resistor and the resistance value in the low resistance state of the variable resistor. A clamping element is provided. In addition, a first voltage supply circuit that supplies a first voltage that boosts the potential of the second terminal to a potential higher than the reference potential in the first period and the second period is provided. Thereby, even when the resistance value of the variable resistor in the high resistance state is set to be low, data can be read stably.

  In the above configuration, the clamp element is formed of a resistance element having a variable resistance value, and the clamp element changes the resistance value of the resistance element according to the resistance value of the variable resistance included in the memory cell in the high resistance state. It can be set as the structure which further comprises an adjustment part. According to this configuration, since the resistance value of the clamp element can be adjusted according to the resistance value of the variable resistor, data can be read more stably.

  In the above configuration, the clamp element includes a resistance element whose resistance value is invariable, and a plurality of resistance values of the resistance element differ depending on a resistance value in the high resistance state of the variable resistance included in the memory cell. The voltage selecting circuit further includes a clamp selection unit that selects one of the clamp elements, and the voltage supply circuit performs the first selection with respect to the bit line via the one clamp element selected by the clamp selection unit. It can be set as the structure which supplies a voltage. According to this configuration, it is possible to select one clamp element most suitable for data reading from among a plurality of clamp elements according to the resistance value of the variable resistor, so that data reading can be performed more stably. it can.

  In the above configuration, the clamp element may include a transistor having an on-resistance value between the high resistance state and the low resistance state of the variable resistor.

  In the above configuration, the bit line may be a metal wiring.

  In the above configuration, the variable resistor included in the memory cell may be a transition metal oxide.

  The present invention provides a first mode in which the state of the variable resistance included in the memory cell is either the first high resistance state or the first low resistance state, and the state of the variable resistance is the first high resistance state. The memory cell that stores data in two modes: a second high resistance state having a lower resistance value and a second mode that is one of a second low resistance state corresponding to the second high resistance state. And a bit line connected to the memory cell, wherein when the data is read from the memory cell, the memory cell and the bit line are not connected in the first period. Bringing the memory cell and the bit line into a conducting state in a second period following the first period; and, in the first period, the bit in the first mode. Boosting the in potential to a first potential higher than a reference potential, and in the second mode, boosting the bit line potential to a second potential higher than the first potential; and in the second period, And a reading step of reading data by comparing the potential of the bit line with the reference potential. According to the above configuration, even when the variable resistor is in the second high resistance state having a resistance value lower than that of the first high resistance state, data can be read stably.

  The present invention provides a memory cell that stores data when the state of a variable resistor included in the memory cell is either a high resistance state or a low resistance state, a bit line connected to the memory cell, and the bit line A first terminal connected to the bit line and a second terminal not connected to the bit line, the magnitude of the resistance value between the first terminal and the second terminal being the variable resistance And a clamp element that is between a resistance value in the high resistance state and a resistance value in the low resistance state of the variable resistor, when reading data from the memory cell. The memory cell and the bit line are turned off in the first period, and the memory cell and the bit line are turned on in the second period following the first period. Boosting the potential of the second terminal to a potential higher than a reference potential in the first period and the second period, and increasing the potential of the bit line in the second period. And a step of reading data by comparing with a reference potential. According to the above configuration, even when the resistance value of the variable resistor in the high resistance state is set to be low, data can be read stably.

  In the above configuration, the clamp element is formed of a resistance element having a variable resistance value, and the resistance value of the resistance element is changed according to a resistance value of the variable resistance included in the memory cell in the high resistance state. It can be set as the structure which further comprises. According to this configuration, since the resistance value of the clamp element can be adjusted according to the resistance value of the variable resistor, data can be read more stably.

  According to the present invention, in a semiconductor device using a variable resistor as a memory element, data can be stably read even when the resistance value of the variable resistor in a high resistance state is set low. it can.

(Comparative example)
Initially, the comparative example of the Example in this invention is demonstrated using drawing.

  FIG. 1 is a block diagram showing a configuration of a semiconductor device 100 according to a comparative example. The memory cell array 10 has a plurality of memory cells MC including data storage elements (not shown). In the memory cell array 10, a plurality of bit lines BL and word lines WL are provided in parallel. The bit line BL constitutes a bit line pair including a first bit line BLz and a second bit line BLx. The memory cell MC is provided in the intersection region of the bit line BL and the word line WL, and is connected to the word line WL and the bit line BL, respectively. As illustrated, the memory cell MC includes a first memory cell MCz connected to the first bit line BLz and a second memory cell MCx connected to the second bit line BLx. The first memory cells MCz and the second memory cells MCx are alternately provided every other word line WL.

  A row decoder 12 for selecting a row is connected to the word line WL, and a column decoder 14 for selecting a column is connected to the bit line BL, respectively, and a memory cell MC to be accessed is determined by a combination of a column and a row. Selected. An address signal for selecting the memory cell MC is sent from the outside to the row decoder 12 and the column decoder 14 via the address buffer 16.

  The write circuit 18 supplies a high voltage for data writing applied to the memory cell MC at the time of data writing. The reset circuit 20 supplies a reference voltage Vref applied to the bit line BL when reading data. The clamp circuit 21 supplies a clamp voltage Vclmp applied to the bit line BL at the time of data reading. The sense amplifier 22 reads and amplifies a signal from the memory cell MC. The sense amplifier driver 24 drives the sense amplifier 22 when reading data.

  The input / output circuit 26 exchanges data between the memory cell array 10 and the outside. The selection register 28 stores information regarding the storage mode of the semiconductor device 100. The control unit 30 selects the storage mode of the semiconductor device 100 based on the information regarding the storage mode stored in the selection register 28. The control unit 30 controls the write circuit 18, the reset circuit 20, the clamp circuit 21, and the input / output circuit 26 in accordance with an external command signal. Further, the control unit 30 controls the column decoder 14 so that one bit to be applied with a voltage at the time of data writing or reading from the bit line pair including the first bit line BLz and the second bit line BLx. Select a line.

  FIG. 2 is a circuit diagram showing a configuration of memory cell MC in FIG. The memory cell MC includes a data storage element 40 and a selection transistor 41 that controls access to the data storage element 40. The selection transistor 41 has a gate connected to the word line WL, a drain connected to the bit line BL, and a source connected to the data storage element 40. The data storage element 40 functions as either a capacitor or a variable resistor depending on the storage mode of the semiconductor device 100. This will be described in detail later. One end of the data storage element 40 is connected to a source line (ground potential) (not shown) or an arbitrary voltage level (potential).

FIG. 3 is a cross-sectional view showing the configuration of the data storage element in FIG. The data storage element 40 includes a variable resistor 42 and an electrode 44. Variable resistor 42, the magnitude of the resistance value used for storing data, resistance increases when a current flows (e.g., 10 ⁴ times or more) made of varying materials. Such materials include transition metal oxides such as Cu ₂ O. The electrode 44 stores data by storing electric charge as a capacitor, and is made of a highly conductive material such as copper. The electrodes 44 are provided at both ends of the variable resistor 42. The periphery of the variable resistor 42 is covered with an insulating portion 46.

With reference to Table 1, the storage mode of the semiconductor device 100 will be described. The semiconductor device 100 according to the comparative example has three storage modes (NVM mode, RAM mode, and MID mode). The nonvolatile NVM mode, which is the first mode, stores data by changing the variable resistor 42 to either the high resistance state or the low resistance state. The variable resistor 42 is in a high resistance state (for example, 10 ^8). Ω), the logic “0” is stored, and in the low resistance state (for example, 10 ² Ω), the logic “1” is stored. The volatile RAM mode, which is the second mode, stores data based on the amount of charge stored in the electrode 44, which is a capacitor. When no charge is stored in the capacitor (during discharging), the logic "0", When charge is stored (during charging), logic “1” is stored. The MID mode that is the third mode is located between the NVM mode and the RAM mode. In the MID mode, data is stored by changing the variable resistor 42 to either the high resistance state or the low resistance state as in the NVM mode, but the resistance value when the variable resistor 42 is in the high resistance state in the MID mode is NVM. In the mode, the resistance value is smaller than the resistance value when the variable resistance 42 is in the high resistance state (for example, 10 ⁷ Ω), and the resistance value when the variable resistance 42 is in the low resistance state in the MID mode It is larger than the resistance value in the resistance state (for example, 10 ³ Ω). That is, the difference in resistance value between the high resistance state and the low resistance state of the variable resistor 42 is smaller in the MID mode than in the NVM mode. Referring to FIG. 2, the data storage element 40 functions as a variable resistor in the NVM mode and the MID mode (FIG. 2A), and functions as a capacitor in the RAM mode (FIG. 2B).

  The data storage element 40 can function as a storage element having three different data storage methods depending on the magnitude of the flowing current and the time during which the voltage is applied. In other words, the switching between the three storage modes is performed by controlling the current flowing through the data storage element 40 and the time during which the voltage is applied to the data storage element 40. In the comparative example, the control unit 30 controls the operation of the write circuit 18, the reset circuit 20, the clamp circuit 21, and the input / output circuit 26, so that the voltage applied to the gate and drain of the selection transistor 41 in the memory cell MC is changed. Control. This will be described below.

Table 2 is a table showing an example of the gate voltage Vg, the drain voltage Vd, and the voltage application time of the selection transistor 41 corresponding to the data writing and reading operations in each storage mode. The voltage application time can be controlled, for example, by changing the pulse width of the voltage pulse applied to the data storage element 40.

  First, voltage conditions for data writing and reading in the NVM mode will be described. FIG. 4 is a graph showing voltage-current characteristics of the data storage element 40. (A) indicated by a solid line arrow indicates a change in voltage-current characteristics when the variable resistor 42 in the data storage element 40 shifts from a low resistance state to a high resistance state (dotted line arrow). b) shows changes in voltage-current characteristics when the variable resistor 42 shifts from the high resistance state to the low resistance state. The data storage element 40 has a threshold voltage Vth for changing the variable resistor 42 from the high resistance state to the low resistance state. When writing logic “0”, a voltage lower than the threshold voltage Vth is applied for a predetermined time. As a result, almost no current flows through the data storage element 40 after a predetermined time has elapsed, and the variable resistor 42 shifts from the low resistance state to the high resistance state (a). At this time, the gate voltage Vg = 2.5 v, the drain voltage Vd = 1.2 V, and the voltage application time S = 250 ns (Table 2). When writing logic “1”, a voltage higher than the threshold voltage Vth is applied. As a result, a current flows through the data storage element 40, and the variable resistor 42 shifts from the high resistance state to the low resistance state (b). At this time, the gate voltage Vg = 1.2 v, the drain voltage Vd = 4 V, and the voltage application time S = 100 ns (Table 2). The voltage application time when the variable resistor 42 is in the high resistance state is longer than the voltage application time when the variable resistor 42 is in the low resistance state. Further, the gate voltage Vg when the variable resistor 42 is set to the high resistance state is larger than the gate voltage Vg when the variable resistor 42 is set to the low resistance state.

  At the time of reading data in the NVM mode, a voltage smaller than the threshold voltage Vth and smaller than the voltage for setting the variable resistor 42 to the high resistance state is applied to the data storage element 40. As a result, when the variable resistor 42 is in the low resistance state, current flows, and when the variable resistance 42 is in the high resistance state, current does not flow, so that logic “0” and “1” can be determined. This will be described in detail later. At this time, the gate voltage Vg = 1.0 v and the drain voltage Vd = Vclmp.

  Next, voltage conditions for data writing and reading in the RAM mode will be described. Referring to Table 2, in the RAM mode, the gate voltage of the selection transistor 41 is always Vg = 2.5V. This is the same as the voltage condition when the variable resistor 42 is set to the high resistance state in the NVM mode. That is, in the RAM mode, the variable resistor 42 is maintained in a high resistance state. When writing logic “0”, a low voltage (for example, ground potential Vss) is applied to the data storage element 40 to discharge the charge stored in the electrode 44. At this time, the drain voltage Vd = 0V and the voltage application time S = 10 ns. When writing logic “1”, the electrode 44 is charged by applying a high voltage to the data storage element 40. At this time, the drain voltage Vd = 1.2 V and the voltage application time S = 10 ns. In the RAM mode, only the charge is taken in and out of the electrode 44, and the state of the variable resistor 42 does not change. For this reason, the voltage application time in the NVM mode is longer than the voltage application time in the RAM mode. The voltage applied to the electrode 44 is smaller than the threshold voltage of the data storage element 40.

  When reading data in the RAM mode, a data read reference voltage Vref is applied to the data storage element 40. The read operation will be described in detail later.

  Next, voltage conditions for data writing and reading in the MID mode will be described. Referring to Table 2, the gate voltage Vg and drain voltage Vd of the select transistor 41 in the MID mode are the same as those in the NVM mode, and only the voltage application time is different. The voltage application time at the time of data writing in the MID mode is s = 50 ns. This is longer than the voltage application time at the time of data writing in the RAM mode and shorter than the voltage application time at the time of data writing in the NVM mode. The voltage condition at the time of data reading in the MID mode is the same as that in the NVM mode.

  When writing data in the NVM mode, the voltage applied to the data storage element 40 is the first voltage. When writing data in the RAM mode, the voltage applied to the data storage element 40 is the second voltage. When writing data in the MID mode, the data storage element. The voltage applied to 40 is the third voltage. At this time, the application time of the first voltage is the longest, and then the application time becomes shorter in the order of the third voltage and the second voltage.

Table 3 shows the characteristics of the data storage element 40 in each storage mode. The numerical values in parentheses are examples, and the characteristics of the data storage element according to the present invention are not limited thereto. The NVM mode has a long data retention time (for example, 10 years), but has a low access speed (for example, 300 nanoseconds) and is close to that of a conventional nonvolatile semiconductor memory (such as PRAM). The RAM mode has a high access speed (for example, 50 nanoseconds), but has a short data retention time (for example, 1 second), and is close to that of a conventional volatile semiconductor memory (DRAM or the like). In order to retain data for a long time, it is necessary to perform refreshing at regular intervals. In the MID mode, the data retention time (for example, one day) and the access speed (for example, 70 nanoseconds) have intermediate values between the NVM mode and the RAM mode. By performing refresh in the same manner as in the RAM mode, the data retention time can be extended. In addition, the writing of data to the NVM mode and the MID mode is accompanied by a change in the state of the variable resistor 42, and the data storage element 40 is damaged, so the number of data rewrites is limited (for example, the NVM mode is 10,000 times, the MID mode Is 100,000 times). In the RAM mode, only charges are taken in and out of the electrode 44 and damage to the data storage element 40 is small, so that rewriting can be performed virtually infinitely.

  Next, a specific circuit configuration and operation regarding data writing of the semiconductor device 100 will be described. FIG. 5 is a circuit diagram showing the configuration of the row decoder 12 in FIG. The hatched transistors 53 to 55 are pMOS transistors, and select voltages Vx1 to Vx3 applied to the respective source terminals according to the inputs Axx to Cxx to the respective gate terminals. The drain terminals of the pMOS transistors 53 to 55 are connected to the gate terminal of the selection transistor 41 via the word line WL, and a voltage selected from the voltages Vx1 to Vx3 is applied as the gate voltage Vg of the selection transistor 41. Is done. Referring to Table 2, Vx1 = 2.5V, which is selected when writing logic “0” in the NVM mode and the MID mode, and in the RAM mode. Vx2 = 1.2V, which is selected when writing logic “1” in the NVM mode and the MID mode. Vx3 = 1.0 V, which is selected when reading data in the NVM mode and the MID mode. The NAND gate 50 receives an address signal A # x / z for selecting a word line and a timing signal Timxpz for controlling the rise and fall of the gate voltage Vg of the selection transistor 41. When the address signal A # x / z is at the H (high) level, any one of the voltages Vx1 to Vx3 is applied to the word line WL via the inverter 52 in accordance with the timing signal Timxpz.

  FIG. 6 is a circuit diagram showing the configuration of the column decoder 14 in FIG. The NAND gate 56 receives an address signal A # x / z for bit line selection and a timing signal Timepz that controls the rise and fall of the drain voltage Vd of the selection transistor 41. Inverter 58 inverts the output of NAND gate 56. When the address signal A # x / z is at the H (high) level, the control signal Timepzb is output to the write circuit 18 according to the timing signal Timepz. Here, the column decoder 14 selects a bit line pair consisting of one bit line to which the memory cell MC to be accessed is connected and one bit line corresponding thereto. Of the two bit lines constituting the bit line pair, one bit line to which the drain voltage Vd is applied is selected by a bit line selection unit 62 (FIG. 8) described later.

  FIG. 7 is a circuit diagram showing the configuration of the write circuit 18 in FIG. The write circuit 18 includes a voltage selection unit 60 and a bit line selection unit 62. In the pMOS transistors 66 to 68 in the voltage selection unit 60, voltages Vy1, Vy2, and Vclmp are applied to their source terminals. The drain terminals of the pMOS transistors 66 to 68 are connected to the drain terminal of the selection transistor 41 via the bit line selection unit 62 and the bit line BL, and the voltage selected from the voltages Vy1, Vy2, and Vclmp is The drain voltage Vd of the selection transistor 41 is applied. Referring to Table 2, Vy1 = 4V, which is selected when writing logic “1” in the NVM mode and the MID mode. Vy2 = 1.2V, and is selected when writing logic “0” in the NVM mode and the MID mode, and charging in the RAM mode. Vclmp = 0.8 V, which is selected when reading data in the NVM mode and the MID mode.

  The NAND gate 64 receives the signal RAMz inverted by the inverter 63 and receives the signal DATAz corresponding to the logical value stored in the data storage element 40. In the RAM mode, the signal RAMz is at H level, and the output of the NAND gate 64 is always at H level. The output of the NAND gate 64 is inverted by the inverter 65 and input to the gate terminal of the transistor 67. Thereby, the transistor 67 is turned on and the voltage Vy2 is selected. In the NVM mode and the MID mode, RAMz becomes L level, and a voltage is selected according to the signal DATAz. That is, when the signal DATAz is at L level (when logic “0” is written), the output of the NAND gate 64 is at H level, the transistor 67 is turned on as in the RAM mode, and the voltage Vy2 is selected. When the signal DATAz is at H level (when logic “1” is written), the output of the NAND gate 64 becomes L level, the transistor 66 is turned on, and the voltage Vy1 is selected.

  The semiconductor device 100 according to the comparative example includes a bit line pair including a first bit line BLz and a first bit line BLx, and memory cells MC are alternately arranged on each bit line. Therefore, the selection method of the bit line to which the drain voltage Vd is to be applied differs between the NVM mode and the RAM mode. This will be described below.

  FIG. 8 is a circuit diagram showing a configuration of a part of the bit line selection unit 62 in FIG. 7 and the memory cell array 10 in FIG. 8A corresponds to the NVM mode and the MID mode, and FIG. 8B corresponds to the RAM mode. The bit line selection unit 62 includes inverters 70 to 72, a NAND gate 73, and pass gates 74 and 75. The drain voltage Vd selected by the voltage selection unit 60 is applied to the inverters 70 and 71. The pass gate 74 is connected to the first bit line BLz, and the pass gate 75 is connected to the second bit line BLx. A first memory cell MCz having a first data storage element is connected to the first bit line BLz, and a second memory cell MCx having a second data storage element is connected to the second bit line BLx.

  Referring to FIG. 8A, in the NVM mode or the MID mode, the signal NVMz input to the NAND gate 73 becomes H level, and the pass gate is set according to the timing signal Timepzb input from the column decoder 14 (FIG. 6). 74 and 75 are switched ON or OFF. The signal Ya0z input to the inverter 70 is an address signal for selecting a bit line to which a memory cell to which data is to be written is connected from among a bit line pair including the first bit line BLz and the second bit line BLx. It is.

  Referring to FIG. 8B, in the RAM mode, the signal RAMz input to the NAND gate 73 becomes H level, and the pass gates 74 and 75 according to the timing signal Timepzb input from the column decoder 14 (FIG. 6). Switches to ON or OFF. The signal DATAz input to the inverter 70 is a logical value of data written to the memory cell. Here, a logic high corresponds to a logic “1” in Table 1, and a logic low corresponds to a logic “0” in Table 1.

  FIG. 9 is a flowchart showing a flow of control when the semiconductor device 100 writes data. First, in step S <b> 10, the control unit 30 determines the storage mode of the semiconductor device 100. In the case of the NVM mode and the MID mode, the process proceeds to step S11, and in the case of the RAM mode, the process proceeds to step S15.

  In the NVM mode or MID mode, the bit line to which the write voltage is to be applied is selected according to the position of the memory cell MC having the data storage element 40 to be written. First, the control unit 30 determines a memory cell MC to be written (step S11). When writing to the first data storage element in the first memory cell MCz, the control unit 30 selects the first bit line BLz. At this time, the signal Ya0z becomes H level, the first bit line BLz is set to H (high) level, and the second bit line BLx is set to a voltage level lower than the H level (for example, half of the power supply voltage Vcc) (step). S12). When writing to the second data storage element in the second memory cell MCx, the control unit 30 selects the second bit line BLx. At this time, the signal Ya0z becomes L level, the second bit line BLx is set to H level, and the first bit line BLz is set to voltage level lower than H level (step S13).

  Next, the control unit 30 controls the write circuit 18 to apply a write voltage to the bit line set to H level in step S12 or S13 and write data (step S14). The write voltage applied to the bit line is the drain voltage Vd selected by the voltage selector 60 (FIG. 7), and the variable resistor 42 in the data storage element 40 is set to either the high resistance state or the low resistance state. It is for changing.

  Referring to FIG. 9, when the RAM mode is determined in step S10, a bit line to which a write voltage is to be applied is selected according to the logical value stored in data storage element 40 in memory cell MC. First, the control unit 30 determines the logical value of data written to the memory cell MC (step S15). When writing logic “1” (logic high), the control unit 30 selects the first bit line. At this time, the signal DATAz becomes H level, the first bit line BLz is set to H level, and the second bit line BLx is set to L level (step S16). When writing logic “0” (logic low), the control unit 30 selects the second bit line (step S17). At this time, the signal DATAz becomes L level, the first bit line BLz is set to L level, and the second bit line BLx is set to H level (step S17).

  Next, the control unit 30 controls the writing circuit 18 to apply a voltage for charging the electrode 44 in the data storage element 40 to the bit line set to the H level in step S16 or S17. Then, data is written (step S18). The write voltage applied to the bit line set at the H level is the drain voltage Vd selected by the voltage selection unit 60 (FIG. 7). At the same time, the control unit 30 applies a voltage (for example, Vss) for discharging charges from the electrode 44 in the data storage element to the bit line set to the L level. Thus, the writing of data to the data storage element 40 is completed.

  In the RAM mode, the bit line to which the drain voltage Vd is to be applied is selected according to the logical value stored in the memory cell MC, regardless of which bit line the memory cell MC to be written is connected to. For this reason, the logical value stored in the memory cell MC (hereinafter, external logic) and the logical value indicating the state of the data storage element 40 in the memory cell MC (see Table 1, hereinafter, internal logic) are not necessarily the same. do not do. This will be described below.

  For example, when logic “1” is stored in the first memory cell MCz (external logic = 1), the signal DATAz becomes H level and the first bit line BLz is set to H level, so that the first memory cell MCz Is charged (internal logic = 1). When logic “0” is stored in the first memory cell MCz (external logic = 0), the signal DATAz becomes L level and the first bit line BLz is set to L level, so that the first memory cell MCz is discharged. (Internal logic = 0). Thus, in the first memory cell MCz, the external logic and the internal logic are equal.

  On the other hand, when logic “1” is stored in the second memory cell MCx (external logic = 1), DATAz is at H level, and the first bit line BLz is set at H level. At this time, since the second bit line BLx is set to the L level, the second memory cell MCx connected to the second bit line BLx is discharged (internal logic = 0). When logic “0” is stored in the second memory cell MCx (external logic = 0), DATAz becomes L level, and the first bit line BLz is set to L level. At this time, since the second bit line BLx is set to the H level, the second memory cell MCx connected to the second bit line BLx is charged (internal logic = 1). Thus, in the second memory cell MCx, the external logic and the internal logic are reversed. However, as will be described later, when data is read from the second memory cell MCx, the data is read by reversing the logical value, so that data can be read correctly from each memory cell.

  Since both the NVM mode and the MID mode store data according to the resistance value of the variable resistor 42, a common circuit (FIGS. 6 to 8) can be used for writing data. The control unit 30 controls the voltage application time to the memory cell by controlling the timing signals Timxpz and Timepz that control the gate voltage Vg and the drain voltage Vd of the selection transistor 41, and the NVM mode, the RAM mode, and the MID mode. Can be switched.

  Next, a specific circuit configuration and operation regarding data reading of the semiconductor device 100 will be described. FIG. 10 is a circuit diagram showing the configuration of the memory cell array 10, the reset circuit 20, and the sense amplifier 22 as a detection circuit in FIG. A first memory cell MCz is connected to the first bit line BLz, and data stored in the first memory cell MCz is read out. A second memory cell MCx is connected to the second bit line BLx, and data stored in the second memory cell MCx is read out.

  The reset circuit 20 is provided between the first bit line BLz and the second bit line BLx. The transistor 84 in the reset circuit 20 shorts the first bit line BLz and the second bit line BLx according to the reset signal BRSz. The transistors 86 and 88 supply the reference voltage Vref to the first bit line BLz and the second bit line BLx according to the reset signal BRSz.

  The sense amplifier 22 is provided between the first bit line BLz and the second bit line BLx, and includes an inverter pair including inverters 80 and 82. The inverters 80 and 82 are supplied with a power supply voltage Vcc and a ground voltage Vss from the sense amplifier driver 24. The sense amplifier 22 amplifies a potential difference between both bit lines in accordance with a latch signal LEz (not shown). The reference voltage Vref is preferably half the power supply voltage Vcc. In the comparative example, Vcc = 1.2V and Vref = 0.6V.

  FIG. 11 is a circuit diagram showing a configuration of the clamp circuit 21 in FIG. The clamp circuit 21 includes NAND gates 90 and 91, inverters 92 and 93, and pMOS transistors 94 and 95. The source terminals of the pMOS transistors 94 and 95 are connected to the output Vd of the voltage selection unit 60 in FIG. At the time of data reading, the pMOS transistor 68 in the voltage selection unit 60 is turned on, and the clamp voltage Vclmp for data reading is selected as the output Vd. The clamp voltage Vclmp is higher than the reference voltage Vref, and in the comparative example, Vclmp = 0.8V.

  The clamp signal clmpz input to the NAND gates 90 and 91 is a signal for operating the clamp circuit 21, and is set to the H level when reading data in the NVM mode or the MID mode. The address signal Ya0z input to the inverter 92 is a signal for selecting a bit line to which the clamp voltage Vclmp is to be applied from the bit line pair including the first bit line BLz and the second bit line BLx in FIG. When the clamp signal clmpz is at the H level, the bit line to which the clamp voltage Vclmp is applied is selected according to the address signal Ya0z. That is, when data is read from the first memory cell MCz, the signal Ya0z becomes H level and the pMOS transistor 94 is turned on, so that the clamp voltage Vclmp is applied to the first bit line BLz. When reading data from the second memory cell MCx, the signal Ya0z becomes L level and the pMOS transistor 95 is turned on, so that the clamp voltage Vclmp is applied to the second bit line BLx.

  FIG. 12 is a circuit diagram showing a configuration of sense amplifier driver 24 in FIG. A power supply voltage Vcc is applied to the source terminal of the pMOS transistor 97, and a ground voltage Vss is applied to the source terminal of the nMOS transistor 98. The drain terminal PSA of the pMOS transistor 97 is connected to the P channel side of the sense amplifier 22, and the drain terminal NSA of the nMOS transistor 98 is connected to the N channel side of the sense amplifier 22. The inverter 96 inverts and inputs the latch signal LEz to the gate terminal of the pMOS transistor 97. When the latch signal LEz is set to the H level, the pMOS transistor 97 and the nMOS transistor 98 are turned on, respectively, and the power supply voltage Vcc is supplied to the terminal PSA and the ground voltage Vss is supplied to the terminal NSA.

  FIG. 13 is a flowchart showing a control flow when the semiconductor device 100 reads data. First, before performing data reading, the controller 30 applies the reference voltage Vref to the first bit line BLz and the second bit line BLx (step S30). Referring to FIG. 10, at this time, the reset signal BRSz is supplied to the reset circuit 20, and the transistor 84 is turned on, whereby the first bit line BLz and the second bit line BLx are short-circuited. As will be described later, after the data is read out, one of the bit line pairs becomes the power supply voltage Vcc and the other one becomes the ground voltage Vss. Therefore, by short-circuiting them, the voltage of the bit line is set to the reference voltage Vref (= Vcc / 2) It can be controlled in the vicinity. Thereby, the power consumption of the circuit can be suppressed. At the same time, the transistors 86 and 88 are turned on by the reset signal BRSz, whereby the reference voltage Vref is supplied to the bit line. As a result, the first bit line BLz and the second bit line BLx are accurately set to the reference voltage Vref.

  Next, in step S32, the control unit 30 determines the storage mode. In the case of the NVM mode and the MID mode, the process proceeds to step S34, and in the case of the RAM mode, the process proceeds to step S50.

  In the NVM mode or the MID mode, the control unit 30 determines a memory cell from which data is to be read (step S34). Here, the control unit 30 selects the first bit line BLz when reading from the first memory cell MCz (step S36), and selects the second bit line BLx when reading from the second memory cell MCx. Selection is made (step S38), and the clamp voltage Vclmp is applied to the selected bit line (step S40). The clamp voltage Vclmp is supplied by the clamp circuit 21 shown in FIG. As a result, the voltage of the bit line to which the memory cell to be read from data is connected rises to Vclmp higher than the reference voltage Vref, and the voltage of the bit line to which the memory cell to be read from data is not connected is maintained at Vref. .

  Next, the control unit 30 turns on the selection transistor 41 of the memory cell from which data is to be read, thereby bringing the data storage element 40 in the memory cell into connection with the bit line (step S42). When the variable resistor 42 in the data storage element 40 is in a high resistance state, no current flows through the memory cell, so the voltage of the bit line remains unchanged at Vclmp, and the bit line connected to the memory cell to which data is read is connected. The voltage becomes higher than the voltage Vref of the remaining bit lines. Conversely, when the variable resistor 42 in the data storage element 40 is in a low resistance state, a current flows through the memory cell, so that the voltage of the bit line drops from Vclmp, and the bit line connected to the memory cell to which data is read is connected. The voltage is lower than the voltage Vref of the remaining bit lines. As described above, the control unit 30 reads data by comparing the voltages of the first bit line BLz and the second bit line BLx (step S44).

  FIG. 14 is a timing chart showing an operation at the time of data reading in the NVM mode and the MID mode. The bit line voltage is maintained at Vref by the reset signal BRSz supplied from the control unit 30. At the time of data reading, the control unit 30 sets the reset signal BRSz to L level and stops supplying the reset voltage Vref (a). Next, the control unit 30 sets the clamp signal Vclmp to the H level (b), raises the bit line voltage to Vclmp (c), sets the clamp signal Vclmp to the L level again, and stops supplying the clamp voltage Vclmp. (D). Next, the control unit 30 increases the voltage of the word line WL (the gate voltage Vg of the selection transistor 41) (e), and makes the data storage element 40 and the bit line conductive. When logic “0” is stored in the data storage element, the bit line voltage does not change because the variable resistor 42 is in a high resistance state (f). When logic “1” is stored in the data storage element, since the variable resistor 42 is in a low resistance state, the bit line voltage decreases and falls below the reference voltage Vref (g). Next, when the control unit 30 sets the latch signal LEz to the H level (h), when the bit line voltage is higher than Vref, it rises to the power supply voltage Vcc (i), and when the bit line voltage is lower than Vref, the ground voltage Vss. (J). Thereby, the signal read from the data storage element 40 is amplified and taken out to the outside.

  Referring to FIG. 13, in the case of the RAM mode, the control unit 30 turns on the selection transistor 41 of the memory cell from which data is to be read, whereby the data storage element 40 and the bit line in the memory cell are made conductive ( Step S50). In the RAM mode, the clamp voltage Vclmp is not supplied to the bit line. When the data storage element 40 is in a charged state, the charge stored in the electrode 44 is released to the bit line, so that the voltage of the bit line connected to the data read target memory cell rises and the remaining bit lines Higher than the voltage Vref. Conversely, when the data storage element 40 is in a discharged state, the electrode 44 is charged from the bit line, so that the voltage of the bit line connected to the memory cell to be read is lowered, and the remaining bit lines It becomes lower than the voltage Vref. The controller 30 compares the voltages of the first bit line BLz and the second bit line BLx (step S52), and reads the logic “1” when the voltage of the first bit line BLz is high (step S54). When the voltage of the 2-bit line BLx is high, logic “0” is read (step S56). With the above operation, the data read operation in the RAM mode is completed.

  When reading data in the RAM mode, the controller 30 reads data based on the voltage level of the first bit line BLz. That is, logic “1” is read when the first bit line BLz is at H level, and logic “0” is read when the first bit line BLz is at L level. As a result, when the memory cell to be read is the first memory cell MCz, the state (internal logic) of the first data storage element in the first memory cell MCz and the logical value of the data to be read (external) Is the same as logic). On the other hand, when the memory cell to be read is the second memory cell MCx, the state of the second data storage element (internal logic) in the second memory cell MCx and the logical value of the data to be read (external logic) Is the opposite of For example, when the second data storage element is in a discharged state (internal logic = 0), the first bit line BLz is at H level and the second bit line BLx is at L level when data is read, so that logic “1” is set. Read (external logic = 1). When the second data storage element is in a charged state (internal logic = 1), the first bit line BLz is set to L level and the second bit line BLx is set to H level at the time of reading data, so that logic “0” is read. (External logic = 0). As described above, in the RAM mode, the internal logic indicating the state of the second data storage element and the external logic indicating the data stored in the second memory cell MCx are reversed. Therefore, when reading data from the second memory cell MCx, data can be read correctly by reversing the internal logic and the external logic.

  FIG. 15 is a timing chart showing an operation at the time of data reading in the RAM mode. First, the bit line voltage is maintained at Vref by the reset signal BRSz supplied from the control unit 30. At the time of data reading, the control unit 30 sets the reset signal BRSz to L level and stops supplying the reset voltage Vref (a). Next, the control unit 30 increases the voltage of the word line WL (the gate voltage Vg of the selection transistor 41) (b), and makes the data storage element 40 and the bit line conductive. When logic “0” is stored in the data storage element, the electrode 44 is in a discharged state, so that the bit line voltage decreases (c). When logic “1” is stored in the data storage element, the bit line voltage rises because the electrode 44 is charged (d). Next, when the control unit 30 sets the latch signal LEz to the H level (e), when the bit line voltage is higher than Vref, it rises to the power supply voltage Vcc (f), and when the bit line voltage is lower than Vref, the ground voltage Vss. (G). Thereby, the signal read from the data storage element 40 is amplified and taken out to the outside.

  In the RAM mode and the MID mode, the data holding time can be extended by refreshing the data storage element 40 at regular intervals. This will be described below.

  FIG. 16 is a flowchart showing a refresh operation of the semiconductor device 100 according to the comparative example. First, in step S60, the control unit 30 determines whether or not a predetermined time has elapsed since the previous data was written or refreshed. Here, the predetermined time can be arbitrarily set, but it must be shorter than the data holding time of the data storage element 40. For example, referring to Table 3, the time is set to 1 second in the RAM mode and shorter than one day in the MID mode. If the predetermined time has elapsed, the control unit 30 reads the data stored in the data storage element 40 (step S62), and the same data as the read data is again read from the same data storage element 40. Write (step S64). Thereby, the refresh of the data storage element 40 is completed.

  The refresh interval can be changed for each mode. FIG. 17 is a flowchart showing an example of control of the refresh operation of the semiconductor device 100 according to the comparative example. First, in step S70, the control unit 30 determines the storage mode. In the RAM mode, for example, refresh is performed every second (step S72), and in the MID mode, for example, refresh is performed every day (step S74). Since the data holding time in the MID mode is longer than the data holding time in the RAM mode, the control unit 30 refreshes data at longer intervals in the MID mode than in the RAM mode. In addition, since the NVM mode has a long data retention time, it can be used without refreshing as shown in FIG.

  The semiconductor device 100 of the comparative example includes a control unit 30 that selects one storage mode from three types of storage modes. Referring to Table 3, the non-volatile NVM mode has a long data retention time, and is suitable for storing data for a long period of time when the semiconductor device 100 is powered off. The volatile RAM mode has a short access time, and is suitable for applications in which data processing is performed at high speed when the semiconductor device 100 is powered on. The MID mode, which is located between the NVM mode and the RAM mode, has a shorter access time than the NVM mode. The normal data holding time is about one day, but the data holding time can be extended by performing refresh. For this reason, for example, a system that refreshes data about once a day can be used substantially as a non-volatile memory, and is excellent as a memory because it has a shorter access time than the NVM mode. As other uses of the MID mode, various applications can be considered by utilizing the fact that data automatically disappears after a certain period of time.

  All three storage modes use the data storage element 40 as a data storage destination. The data storage element 40 can store data according to the resistance value of the variable resistor 42 and the charge amount of the electrode 44, and can correspond to a plurality of storage modes by changing the voltage condition applied by the control unit 30. Is possible. Thereby, a semiconductor device can be reduced in size and density. In addition, the manufacturing cost can be reduced.

  As shown in FIG. 9, the control unit 30 selects a bit line to which a high voltage is applied according to the memory cell to be written when writing data in the NVM mode, and the logic of the data stored when writing data in the RAM mode. A bit line to which a high voltage is applied is selected according to the value. As shown in FIG. 8, the bit line is selected by switching the signal input to the inverter to an address signal Ya0z or a logical value Dataz. As a result, a common circuit configuration can be used in the NVM mode and the RAM mode in which the data storage methods are different. Thereby, a semiconductor device can be reduced in size and manufacturing cost can be reduced.

  Further, as shown in FIGS. 10 and 12, a common circuit configuration (reset circuit 20, sense amplifier 22, sense amplifier driver 24) is used in the NVM mode and the RAM mode even when data is read. Thereby, a semiconductor device can be reduced in size and manufacturing cost can be reduced.

  In the comparative example, the semiconductor device 100 having three types of storage modes has been described as an example. However, any other configuration may be used as long as it has two or more storage modes among the three types of storage modes. . For example, a semiconductor device having only an NVM mode and a RAM mode can be used.

  In the comparative example, the example provided with the selection register 28 for storing information on the storage mode has been described (FIG. 1), but the storage mode may be selected by other methods. FIG. 18 is a diagram showing a part of the configuration of another semiconductor device according to the comparative example. A control terminal 79 is connected to the control unit 30. The control terminal 79 inputs the storage mode of the data storage element 40 to the control unit 30 by being connected to either the power supply voltage Vcc or the ground voltage Vss. The control unit 30 selects the mode of the data storage element 40 according to the input from the control terminal 79. For example, the NVM mode is selected when the control terminal 79 is connected to the power supply voltage Vcc, the RAM mode is selected when the control terminal 79 is connected to Vss, and the MID mode is selected when the control terminal is floating. Set. The control terminal 79 and the power supply terminal are connected by, for example, wire bonding or metal wiring. According to this method, the mode of the data storage element 40 can be mechanically fixed.

  In the comparative example, the example in which all the data storage elements 40 are switched to the NVM mode, the RAM mode, and the MID mode has been described. However, for example, the memory capacity range of the data storage element 40 is set to the NVM mode and the remaining half of the memory capacity is set. The range may be the RAM mode. Further, a semiconductor device having three types of storage modes, that is, an NVM mode, a RAM mode, and an MID mode can be provided.

  In the comparative example, the selection transistor 41 is used to control the voltage applied to the data storage element 40. However, other circuit elements may be used as long as the voltage applied to the data storage element 40 can be controlled. Also good. For example, a diode may be used instead of the selection transistor 41. Thereby, the semiconductor device 100 can be further reduced in size.

  In the comparative example, a transition metal oxide such as CuO has been described as an example of the variable resistor 42 included in the data storage element, but the resistance value is also changed due to a layer change between a crystalline state and an amorphous state. It can be configured using a layer change material such as chalcogenide that changes.

  In the comparative example, the variable resistor 42 is set to the low resistance state or the high resistance state in the NVM mode and the MID mode, and the electrode 44 is set to the charged state or the discharged state in the RAM mode. The resistor 42 and the electrode 44 may take other states. For example, in the NVM mode or the MID mode, the variable resistor 42 may further include a state in which the resistance value is intermediate between the low resistance state and the high resistance state. Thereby, more data than two values can be stored in one data storage element.

  The above is the description of the structure and operational effects of the semiconductor device according to the comparative example.

(Problems in the comparative example)
In the semiconductor device of the comparative example, when data is read in the NVM and MID modes, “0” data of the memory cell MC in the high resistance state may not be read well.

  That is, referring to FIG. 14, when reading data in the NVM mode or MID mode, the bit line voltage is once boosted to Vclmp to charge the bit line BL (c), and then the memory cell MC and the bit line BL are connected. Conduct (d). When the memory cell MC is in a high resistance state, no current flows through the memory cell MC, so that the bit line voltage is maintained at Vclmp without dropping (f).

  Here, for example, when the resistance value in the high resistance state of the memory cell MC is set low to shorten the writing time, a current flows even if the memory cell MC is in the high resistance state, and the potential of the bit line BL drops. May end up. If the potential of the bit line BL falls below the reference potential Vref due to the drop of the bit line potential, it is not possible to distinguish between “0” data and “1” data, and data may not be read correctly. In a semiconductor device having both the NVM mode and the MID mode, such a phenomenon may occur particularly in the MID mode in which the resistance value in the high resistance state is low. In addition, when the bit line is formed of a metal wiring, the capacity of the bit line is reduced, so that the above-described potential drop is more likely to occur.

  The embodiments described below are for solving the above-described problems, and improve data reading in a semiconductor device using a variable resistor as a memory element. In particular, it is an object of the present invention to provide a configuration and method capable of stably reading data even when the resistance value when the variable resistance is in a high resistance state is low.

  Embodiments according to the present invention will be described below with reference to the drawings.

  FIG. 19 is a diagram illustrating a circuit configuration relating to data reading of the semiconductor device according to the first embodiment. Bit lines BL are provided in the horizontal direction, word lines WL are provided in the vertical direction, and memory cells MC are provided in the intersecting regions. The bit line BL can be formed of a metal wiring or a semiconductor diffusion layer. The configuration of the memory cell MC is the same as that of FIG. 2A of the comparative example, and includes a variable resistor 42 that is a data storage element and a selection transistor 41 that is a selection element. The selection transistor 41 has a drain terminal connected to the bit line BL, a gate terminal connected to the word line WL, and a source terminal connected to one end of the variable resistor 42. The other end of the variable resistor 42 is grounded. Further, the arrows in the figure indicate the current flow during data reading. As will be described later, when reading data, the selection transistor 41 makes the memory cell MC and the bit line BL non-conductive in the first period, and the memory cell MC in the second period following the first period. And the bit line BL are turned on.

  A voltage supply circuit 110 that supplies a clamp voltage used when reading data is connected to the bit line BL. The voltage supply circuit 110 includes an N-type transistor 112 and P-type transistors 114 and 116. The source terminal of the N-type transistor 112 is connected to the bit line BL, and the drain terminal is connected to the drain terminals of the P-type transistors 114 and 116. A clamp signal Clmpz is input to the gate terminal of the N-type transistor 112. At the time of data reading, the clamp signal Clmpz becomes a high level, whereby a clamp voltage is supplied to the bit line BL.

  The first voltage Vclmp is applied to the source terminal of the P-type transistor 114, and the second voltage Vclmpm is applied to the source terminal of the P-type transistor 116. Assuming that the reference voltage used when reading data is Vref, the magnitude relationship between the three is “Vref <Vclmp <Vclmpm”. At the time of reading data, the signal (Ax or Bx) supplied to one of the gates of the P-type transistors 114 and 116 becomes a low level, and the source voltage (Vclmp or Vclmpm) of the P-type transistor set to the ON state. Is supplied to the bit line BL via the N-type transistor 112.

  In addition, a sense amplifier 118 which is a reading circuit is connected to the bit line BL. The sense amplifier 118 reads data by comparing the potential of the bit line BL with the reference potential Vref.

Example 1 relates to a semiconductor device having two storage modes, a first mode (corresponding to the NVM mode in the comparative example) and a second mode (corresponding to the MID mode in the comparative example). That is, in the NVM mode, “0” data is stored when the variable resistor 42 is in the first high resistance state, and “1” data is stored when the variable resistance 42 is in the first low resistance state. In the case of the MID mode, the variable resistor 42 enters the second high resistance state having a resistance value lower than that of the first high resistance state, so that “0” data is stored, and the second high resistance state corresponding to the second high resistance state is stored. “1” data is stored when the low resistance state is reached. Table 4 shows the resistance value of the variable resistor 42 in each storage mode. Here, the first high resistance state is 10 ⁸ Ω, the first low resistance state is 10 ² Ω, the second high resistance state is 10 ⁵ Ω, and the second low resistance state is 10 ³ Ω. These resistance values can be appropriately changed according to the specifications of the apparatus.

  A data read operation of the semiconductor device according to the first embodiment will be described with reference to FIGS. Note that the memory cell MC and the bit line BL are in a non-conductive state at the start of the read operation, and become conductive in the middle of the read operation. Here, a period from the start of data reading until the memory cell MC and the bit line BL are turned on is a first period, and a period from when both are turned on to the end of data reading is a second period.

  FIG. 20 is a flowchart of the data read operation in the first embodiment. First, a reset circuit (not shown) resets the potential of the bit line BL to the reference potential Vref (step S100). Next, a control unit (not shown) determines the storage mode of the semiconductor device (step S102). In step S102, when the NVM mode (first mode) is set, the voltage supply circuit 110 supplies the first voltage Vclmp to the bit line BL and boosts the potential of the bit line BL to Vclmp (first potential). (Step S104). When the charging of the bit line BL is completed after a certain time has elapsed, the voltage supply circuit 110 stops supplying the first voltage Vclmp (step S108).

  Next, the selection transistor 41 makes the bit line BL and the memory cell MC conductive (step S110). After a predetermined time has elapsed, the sense amplifier 118 compares the potential of the bit line BL with the reference potential Vref, thereby reading the data stored in the memory cell MC (step S112) and outputting the result to the outside (step S114). . Here, data “0” is read when the potential of the bit line BL is higher than the reference potential Vref, and data “1” is read when the potential is lower.

  In step S102, when the mode is the MID mode (second mode), the voltage supply circuit 110 supplies the second voltage Vclmpm to the bit line BL and boosts the potential of the bit line BL to Vclmpm (second potential). (Step S106). The subsequent operation is the same as that in the NVM mode (steps S108 to S114).

  FIG. 21 is a timing chart of the data read operation in the first embodiment. First, at the start, the reset signal BRSz is at a high level, and the potential of the bit line BL is set to the reference potential Vref. When the reset signal BRSz falls (a), the clamp signal clmpz rises (b), and the potential of the bit line BL rises. Here, when the memory mode of the semiconductor device is the NVM mode, the potential of the bit line BL rises to Vclmp (c), and when the memory mode is the MID mode, the potential rises to Vclmpm higher than Vclmp (d).

Hereinafter, a case where the storage mode is the MID mode will be described. When the word line WL rises after a lapse of a certain time (e), the selection transistor is turned on and the memory cell MC and the bit line BL are conducted. Here, since the resistance value of the second high resistance state (10 ⁵ Ω) of the memory cell MC is lower than that of the first high resistance state (10 ⁸ Ω), current flows in the bit line BL and the memory cell MC. The potential of the bit line BL gradually decreases (f). However, since the bit line BL has been previously boosted to Vclmpm, which is higher in potential than Vclmp, it takes a longer time to fall below the reference potential Vref than when boosted to Vclmp. Before the potential of the bit line BL falls below the reference potential Vref, the latch signal LEz rises (g). In response to this, the sense amplifier 118 compares the potential of the bit line BL with the reference potential Vref (h), and amplifies and outputs the result (i). Since the potential of the bit line BL is higher than the reference potential Vref at the time point (h) when the sense amplifier compares the potential, “0” data can be read correctly.

  On the other hand, when the memory cell MC is in the second low resistance state, the potential of the bit line BL is greatly lowered to fall below the reference potential Vref, and “1” data is read (j). Further, the change in the potential of the bit line BL when the storage mode is the NVM mode is indicated by a one-dot chain line in the drawing. The upper line (k) indicates the case where the memory cell MC is in the first high resistance state, and the lower line (l) indicates the case where the memory cell MC is in the first low resistance state. The potential of the bit line BL in the NVM mode changes in the same manner as in the comparative example (FIG. 14).

  As described above, the semiconductor device according to the first embodiment includes the voltage supply circuit 110 that supplies two types of clamp voltages according to the storage mode of the semiconductor device in the first period when data is read. In the MID mode in which the memory cell MC is in the second high resistance state, the voltage supply circuit 110 sets the potential of the bit line BL higher than in the NVM mode in which the memory cell MC is in the first high resistance state. Boost to a high potential. As a result, data can be read correctly even if the potential of the bit line BL decreases due to a leakage current when reading data. That is, even when the resistance value of the variable resistor in the high resistance state is set to be low, data can be read stably. In addition, even when the bit line BL is formed using a metal wiring and the capacitance thereof is small, data can be read stably.

  In the semiconductor device according to the first embodiment, the supply of the boosted voltage is stopped after a certain time after the voltage supply circuit 110 boosts the bit line potential to Vclmp or Vclmpm (step S108 in FIG. 20). Thereby, since power consumption can be suppressed compared with Example 2 described later, it is suitable for mounting on a small electronic device such as a mobile phone.

  In the description of the first embodiment, only the configuration around the readout circuit is shown in FIG. The overall configuration of the semiconductor device may be the same as that described in the comparative example (FIGS. 1 to 18), but if the configuration necessary for operating the readout circuit in FIG. It is good also as a structure different from an example. For example, the semiconductor device according to the comparative example has a RAM mode in which data is stored based on the amount of charge stored in the electrode 44 (see FIG. 3) of the memory cell MC, but the first embodiment may have a configuration without the RAM mode. Good.

  FIG. 22 is a diagram illustrating a circuit configuration relating to data reading of the semiconductor device according to the second embodiment. Portions common to the first embodiment (FIG. 19) are denoted by the same reference numerals and detailed description thereof is omitted. Further, the arrows in the figure indicate the flow of current during data reading as in FIG.

The variable resistor 42 of the memory cell MC in the second embodiment stores data by being in either the high resistance state or the low resistance state. Unlike the first embodiment, it is not always necessary to have two storage modes. Here, description will be made assuming that the resistance value in the high resistance state is 10 ⁵ Ω and the resistance value in the low resistance state is 10 ² Ω (corresponding to the MID mode of the first embodiment).

  Referring to FIG. 22A, the semiconductor device according to the second embodiment includes a clamp resistor 120A that is a clamp element. One end (first terminal) of the clamp resistor 120A is connected to the bit line BL, and the other end (second terminal) is connected to the output terminal of the voltage supply circuit 110. The voltage supply circuit 110 includes an N-type transistor 112, and a clamp voltage Vclmp is input to the drain terminal of the N-type transistor 112, and a clamp signal Clmpz is input to the gate terminal. The source terminal of the N-type transistor 112 is connected to the second terminal of the clamp resistor 120A.

The clamp resistor 120A is formed such that the resistance value between the first terminal and the second terminal is between the high resistance state and the low resistance state of the variable resistor 42. The Here, the resistance value of the clamp resistor 120A is set to 10 ^3.5 Ω which is an intermediate resistance value between the high resistance state (10 ⁵ Ω) and the low resistance state (10 ² Ω) of the variable resistor 42.

  A data read operation of the semiconductor device according to the second embodiment will be described with reference to FIGS. Note that the memory cell MC and the bit line BL are in a non-conductive state at the start of the read operation, and become conductive in the middle of the read operation. Here, as in the first embodiment, the period from the start of data reading until the memory cell MC and the bit line BL become conductive is the first period, and the period from when both become conductive until the data reading ends. The second period. The conduction between the memory cell MC and the bit line BL is controlled by the selection transistor 41 as in the first embodiment.

  FIG. 23 is a flowchart of the data read operation in the first embodiment. First, a reset circuit (not shown) resets the potential of the bit line BL to the reference potential Vref (step S120). Next, the voltage supply circuit 110 supplies the first voltage Vclmp to the second terminal of the clamp resistor 120A (step S122). As a result, the potentials of the second terminal and the bit line BL are boosted to Vclmp. Unlike the first embodiment, the voltage supply circuit 110 continues to supply the first voltage Vclmp throughout the data read operation. As a result, the potential of the second terminal of the clamp resistor 120A (the side opposite to the terminal connected to the bit line BL) is maintained at Vclmp.

  Next, the selection transistor 41 makes the bit line BL and the memory cell MC conductive (step S124). After a predetermined time has elapsed, the sense amplifier 118 compares the potential of the bit line BL with the reference potential Vref, thereby reading the data stored in the memory cell MC (step S126) and outputting the result to the outside (step S128). . Here, data “0” is read when the potential of the bit line BL is higher than the reference potential Vref, and data “1” is read when the potential is lower.

  FIG. 24 is a timing chart of the data read operation in the second embodiment. First, at the start, the reset signal BRSz is at a high level, and the potential of the bit line BL is set to Vref. When the reset signal BRSz falls (a), the clamp signal clmpz rises (b), and the potential of the bit line BL rises to Vclmp. Unlike the first embodiment (FIG. 21), the clamp signal Clmpz is maintained at a high level over the first period and the second period.

When the word line WL rises after a lapse of a certain time (c), the selection transistor is turned on and the memory cell MC and the bit line BL are conducted (d). Here, when the variable resistor 42 of the memory cell MC is in a high resistance state, the resistance value of the variable resistor 42 is larger than the resistance value of the clamp resistor 120A (10 ⁵ Ω> 10 ^3.5 Ω). Almost no current flows and the potential of the bit line BL does not drop (e). During this time, the voltage supply circuit 110 supplies the clamp voltage Vclmp to the second terminal of the clamp resistor 120A, so that a voltage drop due to the leakage current hardly occurs. On the other hand, when the variable resistor 42 of the memory cell MC is in the low resistance state, the resistance value of the variable resistor 42 is smaller than the resistance value of the clamp resistor 120A (10 ² Ω <10 ^3.5 Ω). A current flows and the potential of the bit line BL drops (f).

  After a predetermined time has elapsed, the latch signal LEz rises (g). In response to this, the sense amplifier 118 compares the potential of the bit line BL with the reference potential Vref, and amplifies and outputs the result. When the memory cell MC is in a high resistance state, the potential of the bit line BL is amplified to the power supply voltage Vcc, and “0” data is read (h). When the memory cell MC is in a low resistance state, the potential of the bit line BL is amplified to the ground voltage Vss, and “1” data is read (i).

  As described above, in the semiconductor device of Example 2, the magnitude of the resistance value between the first terminal and the second terminal is such that the resistance value of the variable resistor 42 in the high resistance state and the resistance value in the low resistance state. And a clamp element (clamp resistor 120A) in between. In the first period and the second period when reading data, the voltage supply circuit 110 supplies a voltage that boosts the potential of the second terminal of the clamp resistor 120A to the potential Vclmp higher than the reference potential Vref. Thereby, even when the resistance value of the variable resistance 42 in the high resistance state is set to be low, data can be read stably.

  Referring to FIG. 22A, the semiconductor device according to the second embodiment includes one clamp element (clamp resistor 120A), but includes a plurality of clamp elements (clamp resistors) having different resistance values in parallel. Also good. Furthermore, a configuration may be provided that includes a clamp selection unit that selects one clamp element from the plurality of clamp elements according to the resistance value of the variable resistor 42 included in the memory cell MC in the high resistance state. At this time, the voltage supply circuit supplies the clamp voltage Vclmp to the bit line BL via one clamp element selected by the clamp selection unit. According to this configuration, it is possible to use the clamp element that is most suitable for reading data in accordance with the change in resistance value of the variable resistor 42 in the memory cell MC, so that data can be read more stably. .

  Referring to FIG. 22B, the clamp element may be a variable resistor 120B. Similarly to the variable resistor 42, the variable resistor 120B may be formed of an MIM element (see FIG. 3, Table 2) that can change the resistance value by applying a voltage pulse of a predetermined condition. Further, by separately providing a write circuit (clamp adjustment unit) that applies a write pulse to the variable resistor 120B, a clamp element (variable) is selected according to the resistance values of the variable resistor 42 in the memory cell MC in the high resistance state and the low resistance state. The resistance value of the resistor 120B) may be changed. According to this configuration, the resistance value of the clamp resistor can be set in accordance with the change in the resistance value of the memory cell MC, so that data can be read more stably.

Referring to FIG. 22 (c), the clamp element may be a transistor 120C. At this time, the ON resistance of the transistor 120C is formed to have a resistance value (10 ² Ω to 10 ⁵ Ω) between the high resistance state and the low resistance state of the variable resistor 42 in the memory cell MC. The clamp voltage Vclmp is configured so that the clamp signal Clmpz is input to the gate terminal. According to this configuration, the transistor 120C as a clamp element plays the role of the N-type transistor 112 in FIGS. 22A and 22B, so that the semiconductor device can be downsized.

  The semiconductor device according to the second embodiment is configured to store data in one storage mode (corresponding to the MID mode in the comparative example), but has two or more storage modes (NVM mode and RAM mode in the comparative example). It is good also as a structure.

  The preferred embodiments of the present invention have been described in detail above, but the present invention is not limited to such specific embodiments, and various modifications can be made within the scope of the gist of the present invention described in the claims.・ Change is possible.

FIG. 1 is a block diagram showing a configuration of a semiconductor device according to a comparative example. FIG. 2 is a diagram showing the configuration of the memory cell in FIG. FIG. 3 is a diagram showing the configuration of the data storage element in FIG. FIG. 4 is a graph showing voltage-current characteristics of the data storage element in FIG. FIG. 5 is a diagram showing the configuration of the row decoder in FIG. FIG. 6 is a diagram showing the configuration of the column decoder in FIG. FIG. 7 is a diagram showing the configuration of the write circuit in FIG. FIG. 8 is a diagram showing a configuration of the bit line selection unit in FIG. 7 and a part of the memory cell array in FIG. FIG. 9 is a flowchart showing an operation at the time of data writing of the semiconductor device according to the comparative example. FIG. 10 is a diagram showing the configuration of the reset circuit and the sense amplifier in FIG. FIG. 11 is a diagram showing the configuration of the clamp circuit in FIG. FIG. 12 is a diagram showing the configuration of the sense amplifier driver in FIG. FIG. 13 is a flowchart showing an operation at the time of data reading of the semiconductor device according to the comparative example. FIG. 14 is a timing chart when reading data in the NVM mode. FIG. 15 is a timing chart when reading data in the RAM mode. FIG. 16 is a flowchart (part 1) illustrating the refresh operation of the semiconductor device according to the comparative example. FIG. 17 is a flowchart (part 2) illustrating the refresh operation of the semiconductor device according to the comparative example. FIG. 18 is a diagram showing a configuration of another semiconductor device according to the comparative example. FIG. 19 is a circuit diagram illustrating a configuration of the semiconductor device according to the first embodiment. FIG. 20 is a flowchart illustrating an operation at the time of data reading of the semiconductor device according to the first embodiment. FIG. 21 is a timing chart illustrating the data read operation of the semiconductor device according to the first embodiment. 22A to 22C are circuit diagrams illustrating the configuration of the semiconductor device according to the second embodiment. FIG. 23 is a flowchart illustrating an operation at the time of data reading of the semiconductor device according to the second embodiment. FIG. 24 is a timing chart illustrating the data read operation of the semiconductor device according to the second embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Memory cell array 12 Row decoder 14 Column decoder 16 Address buffer 18 Write circuit 20 Reset circuit 21 Clamp circuit 22 Sense amplifier 24 Sense amplifier driver 26 Input / output circuit 28 Selection register 40 Data storage element 41 Selection transistor 42 Variable resistance 44 Electrode 46 Insulation part 60 Voltage Selection Unit 62 Bit Line Selection Unit 79 Control Terminal 100 Semiconductor Device 110 Voltage Supply Circuit 120 Clamp Element

Claims (10)

A first mode in which the state of the variable resistor included in the memory cell is either the first high-resistance state or the first low-resistance state; and the state of the variable resistor has a resistance value greater than that of the first high-resistance state. The memory cell storing data in two modes: a low second high resistance state and a second mode that is one of a second low resistance state corresponding to the second high resistance state;
A bit line connected to the memory cell;
When reading data from the memory cell, the memory cell and the bit line are turned off in a first period, and the memory cell and the bit line are turned off in a second period following the first period. A selection element to be in a conductive state;
In the first period, in the first mode, a first voltage for boosting the potential of the bit line to a first potential higher than a reference potential is supplied, and in the second mode, the potential of the bit line is increased. A voltage supply circuit for supplying a second voltage boosted to a second potential higher than the first potential;
A reading circuit for reading data by comparing the potential of the bit line with the reference potential in the second period;
A semiconductor device comprising: A memory cell that stores data when the state of the variable resistor included in the memory cell is either a high resistance state or a low resistance state;
A bit line connected to the memory cell;
Including a first terminal connected to the bit line and a second terminal not connected to the bit line, and a resistance value between the first terminal and the second terminal is A clamping element that is between a resistance value of the variable resistor in the high resistance state and a resistance value of the variable resistor in the low resistance state;
When reading data from the memory cell, the memory cell and the bit line are turned off in a first period, and the memory cell and the bit line are turned off in a second period following the first period. A selection element to be in a conductive state;
A first voltage supply circuit for supplying a first voltage for boosting the potential of the second terminal to a potential higher than a reference potential in the first period and the second period;
A reading circuit for reading data by comparing the potential of the bit line with the reference potential in the second period;
A semiconductor device comprising: The clamp element comprises a resistance element having a variable resistance value.
3. The semiconductor device according to claim 2, further comprising a clamp adjustment unit configured to change a resistance value of the resistance element in accordance with a resistance value of the variable resistor included in the memory cell in the high resistance state. . The clamp element comprises a resistance element whose resistance value does not change,
According to the resistance value in the high resistance state of the variable resistor included in the memory cell, further comprising a clamp selection unit that selects one of the clamp elements having different resistance values of the resistance element,
3. The semiconductor device according to claim 2, wherein the voltage supply circuit supplies the first voltage to the bit line through one of the clamp elements selected by the clamp selection unit.   The semiconductor device according to claim 2, wherein the clamp element includes a transistor having a resistance value of an on-resistance between the high resistance state and the low resistance state of the variable resistor.   The semiconductor device according to claim 1, wherein the bit line is a metal wiring.   The semiconductor device according to claim 1, wherein the variable resistor included in the memory cell is a transition metal oxide. A first mode in which the state of the variable resistor included in the memory cell is either the first high-resistance state or the first low-resistance state; and the state of the variable resistor has a resistance value greater than that of the first high-resistance state. The memory cell for storing data in two modes: a low second high-resistance state and a second mode that is one of a second low-resistance state corresponding to the second high-resistance state; and the memory A control method of a semiconductor device comprising a bit line connected to a cell,
When reading data from the memory cell, the memory cell and the bit line are turned off in a first period, and the memory cell and the bit line are turned off in a second period following the first period. A step of conducting, and
In the first period, in the first mode, the bit line potential is boosted to a first potential higher than a reference potential, and in the second mode, the bit line potential is higher than the first potential. Boosting to a second potential;
A reading step of reading data by comparing the potential of the bit line with the reference potential in the second period;
A method for controlling a semiconductor device, comprising: A memory cell that stores data when the state of a variable resistor included in the memory cell is either a high resistance state or a low resistance state, a bit line connected to the memory cell, and a bit line connected to the bit line Including a first terminal and a second terminal not connected to the bit line, and a resistance value between the first terminal and the second terminal is greater than the high resistance of the variable resistor A clamping element that is between a resistance value in a state and a resistance value in the low resistance state of the variable resistor, and a method for controlling a semiconductor device comprising:
When reading data from the memory cell, the memory cell and the bit line are turned off in a first period, and the memory cell and the bit line are turned off in a second period following the first period. A step of conducting, and
Boosting the potential of the second terminal to a potential higher than a reference potential in the first period and the second period;
Reading out data by comparing the potential of the bit line with the reference potential in the second period;
A method for controlling a semiconductor device, comprising: The clamp element comprises a resistance element having a variable resistance value.
10. The control of a semiconductor device according to claim 9, further comprising a step of changing a resistance value of the resistance element in accordance with a resistance value of the variable resistor included in the memory cell in the high resistance state. Method.

Images