JP2009256154A - Substrate for growing semiconductor crystal and semiconductor crystal - Google Patents

Substrate for growing semiconductor crystal and semiconductor crystal Download PDF

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JP2009256154A
JP2009256154A JP2008109857A JP2008109857A JP2009256154A JP 2009256154 A JP2009256154 A JP 2009256154A JP 2008109857 A JP2008109857 A JP 2008109857A JP 2008109857 A JP2008109857 A JP 2008109857A JP 2009256154 A JP2009256154 A JP 2009256154A
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semiconductor crystal
semiconductor
crystal growth
growth substrate
protective film
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Yasuhiro Oda
康裕 小田
Noriyuki Watanabe
則之 渡邉
Takashi Kobayashi
隆 小林
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Nippon Telegraph and Telephone Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate for growing a semiconductor crystal, on which a semiconductor layer with few crystal defects can be formed, and to provide a semiconductor crystal. <P>SOLUTION: A protective film 14 made of silicon nitride having a film thickness of 100 nm is formed in an outer circumference portion of a substrate body 11 for growing a semiconductor crystal, the substrate made of Si having (111) plane direction of crystal. That is, the protective film 14 is formed on the side face 12 of the substrate body 11 for growing a semiconductor crystal and in a portion from the outermost circumference to 2 mm inside on the surface 13 of the substrate body 11 for growing a semiconductor crystal. Further, a buffer layer 21 made of AlN is formed in a region where the protective film 14 is not formed, on the surface 13 of the substrate body 11 for growing a semiconductor crystal, and a semiconductor layer 22 comprising a GaN crystal having a film thickness of 3 μm is formed on the buffer layer 21. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は窒化物系化合物半導体結晶からなる半導体層を成長するための半導体結晶成長用基板および半導体結晶成長用基板に窒化物系化合物半導体結晶からなる半導体層を形成した半導体結晶に関するものである。   The present invention relates to a semiconductor crystal growth substrate for growing a semiconductor layer made of a nitride compound semiconductor crystal, and a semiconductor crystal in which a semiconductor layer made of a nitride compound semiconductor crystal is formed on the semiconductor crystal growth substrate.

窒化物系化合物半導体（たとえば、ＧａＮ、ＡｌＮ、ＩｎＮ、ＢＮおよびそれらの混晶）は、同材料で基板を作製することが困難であった。そのため、異種材料であるサファイア基板や炭化シリコン基板を用いて成膜が行われてきた。しかしながら、サファイア基板は熱伝導率が低いために発熱しやすい高出力型電子デバイス用途には向かず、また炭化シリコン基板は調達コストが非常に高いという問題があった。近年、それらの問題を回避するために、価格が安価で安定供給が見込め、かつ大口径化が進んでいる、Ｓｉ（シリコン）基板を用いて窒化物系化合物半導体を成膜する試みがなされている。   Nitride-based compound semiconductors (for example, GaN, AlN, InN, BN, and mixed crystals thereof) have been difficult to produce a substrate using the same material. Therefore, film formation has been performed using a sapphire substrate or a silicon carbide substrate which is a different material. However, since the sapphire substrate has a low thermal conductivity, the sapphire substrate is not suitable for use in a high-power electronic device that easily generates heat, and the silicon carbide substrate has a problem that the procurement cost is very high. In recent years, in order to avoid these problems, attempts have been made to form nitride-based compound semiconductors using a Si (silicon) substrate, which is inexpensive, can be stably supplied, and has a large diameter. Yes.

Ｓｉ基板上に窒化物系化合物半導体を成膜する際の課題は、Ｓｉと窒化物系化合物半導体とで熱膨張係数が異なり、一般に高温で成膜した後に降温すると、窒化物系化合物半導体に引っ張り歪みが加わるためにクラック（ひび割れ）が入りやすいことである。また、格子定数の差に起因する歪みも加わりやすい。加えて、Ｓｉは窒化物系化合物半導体を構成する元素のうち特にＧａ（ガリウム）と直接接触すると、Ｓｉがメルトバックエッチングしてしまい、Ｓｉ基板の表面に反応物が析出してくる。この反応物の析出は、単にその領域での窒化物系化合物半導体の結晶成長を阻害するだけでなく、反応していない領域へもパーティクルをまき散らして、窒化物系化合物半導体の結晶欠陥を誘発する。これを防ぐ一つの方法として、Ｓｉ基板の直上にＡｌＮ膜を成長して、ＧａとＳｉ基板とが直接接触するのを防ぐというものがある。   The problem in forming a nitride compound semiconductor on a Si substrate is that the thermal expansion coefficient differs between Si and the nitride compound semiconductor. Generally, when the temperature is lowered after film formation at a high temperature, the nitride compound semiconductor is pulled. Since distortion is added, cracks are likely to occur. Further, distortion caused by the difference in lattice constant is also easily added. In addition, when Si is in direct contact with Ga (gallium) among elements constituting the nitride-based compound semiconductor, Si is melt-back etched, and a reactant is deposited on the surface of the Si substrate. This precipitation of the reactants not only inhibits the crystal growth of the nitride compound semiconductor in the region, but also scatters particles to the unreacted region to induce crystal defects in the nitride compound semiconductor. . One method for preventing this is to grow an AlN film directly on the Si substrate to prevent direct contact between Ga and the Si substrate.

図５は従来の基板に窒化物系化合物半導体結晶からなる半導体層を形成した半導体結晶を示す断面図である。図に示すように、Ｓｉからなる基板１上にＡｌＮからなる中間層２が形成され、中間層２上にＡｌＧａＩｎＮ結晶からなる半導体層３が形成されている。   FIG. 5 is a sectional view showing a semiconductor crystal in which a semiconductor layer made of a nitride-based compound semiconductor crystal is formed on a conventional substrate. As shown in the drawing, an intermediate layer 2 made of AlN is formed on a substrate 1 made of Si, and a semiconductor layer 3 made of AlGaInN crystal is formed on the intermediate layer 2.

この半導体結晶においては、基板１と半導体層３との間に中間層２が形成されているから、半導体層３に発生する歪みを緩和することができ、また基板１の表面に反応物が析出するのをある程度防止することができる。
特許第３３５２７１２号公報 In this semiconductor crystal, since the intermediate layer 2 is formed between the substrate 1 and the semiconductor layer 3, the strain generated in the semiconductor layer 3 can be alleviated, and the reactant is deposited on the surface of the substrate 1. To some extent can be prevented.
Japanese Patent No. 3352712

しかしながら、上述した半導体結晶においては、基板１の外周部の半導体層３における成長層には歪みによる応力集中がかかるから、数ｍｍ程度のクラックが発生して、基板１に半導体層３のＧａが侵入することがあり、加えて基板１の側面にはそもそも中間層２をエピタキシャル成長させるのが難しいので、基板１の外周部でのＧａの反応を確実に抑えるのは難しかった。このため、基板１の表面に反応物が析出し、反応物が析出した領域での窒化物系化合物半導体の結晶成長が阻害されるとともに、反応物のパーティクルが反応していない領域にまき散らされ、半導体層３の結晶欠陥を誘発するから、半導体層３の結晶欠陥が多くなる。   However, in the semiconductor crystal described above, stress concentration due to strain is applied to the growth layer in the semiconductor layer 3 on the outer peripheral portion of the substrate 1, so that a crack of about several millimeters is generated, and Ga of the semiconductor layer 3 is formed on the substrate 1. In addition, since it is difficult to epitaxially grow the intermediate layer 2 on the side surface of the substrate 1 in the first place, it is difficult to reliably suppress the reaction of Ga at the outer peripheral portion of the substrate 1. For this reason, the reactant is deposited on the surface of the substrate 1, and the crystal growth of the nitride compound semiconductor in the region where the reactant is deposited is inhibited, and the particles of the reactant are scattered in the unreacted region. Since crystal defects in the semiconductor layer 3 are induced, the crystal defects in the semiconductor layer 3 increase.

本発明は、上述の課題を解決するためになされたものであり、結晶欠陥の少ない半導体層を形成することができる半導体結晶成長用基板、半導体結晶を提供することを目的とする。   The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a semiconductor crystal growth substrate and a semiconductor crystal that can form a semiconductor layer with few crystal defects.

この目的を達成するため、本発明においては、窒化物系化合物半導体結晶からなる半導体層を成長するための半導体結晶成長用基板において、Ｓｉからなる半導体結晶成長用基板本体の少なくとも側面に保護膜を形成する。   In order to achieve this object, in the present invention, in a semiconductor crystal growth substrate for growing a semiconductor layer made of a nitride compound semiconductor crystal, a protective film is formed on at least the side surface of the semiconductor crystal growth substrate body made of Si. Form.

この場合、上記半導体結晶成長用基板本体の上記保護膜に覆われている部位が上記半導体層の構成元素と反応しないようにしてもよい。   In this case, the portion of the semiconductor crystal growth substrate body covered with the protective film may not react with the constituent elements of the semiconductor layer.

これらの場合、上記半導体層の構成元素を、III族元素としてもよい。   In these cases, the constituent element of the semiconductor layer may be a group III element.

この場合、上記III族元素を、Ｇａとしてもよい。   In this case, the group III element may be Ga.

これらの場合、上記半導体結晶成長用基板本体の側面および表面の最外周から５ｍｍ以内の部分に上記保護膜を形成してもよい。   In these cases, the protective film may be formed on the side surface and the outermost periphery of the surface of the semiconductor crystal growth substrate body within 5 mm.

これらの場合、上記保護膜を、窒化シリコン、窒化アルミニウム、窒化チタン、窒化タングステン、酸化シリコン、酸化アルミニウムのいずれかから構成された膜としてもよい。   In these cases, the protective film may be a film made of any one of silicon nitride, aluminum nitride, titanium nitride, tungsten nitride, silicon oxide, and aluminum oxide.

また、半導体結晶成長用基板に窒化物系化合物半導体結晶からなる半導体層を形成した半導体結晶において、上記の半導体結晶成長用基板に、少なくともＧａおよびＮを含んだ上記窒化物系化合物半導体結晶からなる上記半導体層を形成する。   Further, in a semiconductor crystal in which a semiconductor layer made of a nitride compound semiconductor crystal is formed on a semiconductor crystal growth substrate, the semiconductor crystal growth substrate is made of the nitride compound semiconductor crystal containing at least Ga and N. The semiconductor layer is formed.

この場合、上記半導体層の層厚を０．５μｍ以上としてもよい。   In this case, the thickness of the semiconductor layer may be 0.5 μm or more.

本発明に係る半導体結晶成長用基板および半導体結晶においては、半導体結晶成長用基板本体に形成された保護膜によって、半導体層の窒化物系化合物半導体の構成元素と半導体結晶成長用基板とが化学反応するのを防止することができるから、半導体結晶成長用基板の外周部での意図しない反応物の生成を確実に抑えることができるので、結晶欠陥の少ない半導体層を形成することができる。   In the semiconductor crystal growth substrate and the semiconductor crystal according to the present invention, a chemical reaction occurs between the constituent elements of the nitride-based compound semiconductor of the semiconductor layer and the semiconductor crystal growth substrate by the protective film formed on the semiconductor crystal growth substrate body. Therefore, the generation of unintended reactants at the outer periphery of the semiconductor crystal growth substrate can be reliably suppressed, so that a semiconductor layer with few crystal defects can be formed.

図１は本発明に係る半導体結晶成長用基板を示す斜視図、図２は本発明に係る半導体結晶成長用基板の一部を示す断面図である。図に示すように、面方位が（１１１）であるＳｉからなる半導体結晶成長用基板本体１１の外周部に膜厚が１００ｎｍの窒化シリコンからなる保護膜１４が形成されている。すなわち、半導体結晶成長用基板本体１１の側面１２および半導体結晶成長用基板本体１１の表面１３の最外周から２ｍｍまでの部分に保護膜１４が形成されている。そして、半導体結晶成長用基板本体１１の保護膜１４に覆われている部位は半導体層２２（説明後述）の構成元素と反応しない。   FIG. 1 is a perspective view showing a semiconductor crystal growth substrate according to the present invention, and FIG. 2 is a sectional view showing a part of the semiconductor crystal growth substrate according to the present invention. As shown in the figure, a protective film 14 made of silicon nitride having a film thickness of 100 nm is formed on the outer periphery of a semiconductor crystal growth substrate body 11 made of Si having a plane orientation of (111). That is, the protective film 14 is formed on the side surface 12 of the semiconductor crystal growth substrate body 11 and the surface 13 of the semiconductor crystal growth substrate body 11 from the outermost periphery to 2 mm. And the site | part covered with the protective film 14 of the board | substrate body 11 for semiconductor crystal growth does not react with the structural element of the semiconductor layer 22 (after-mentioned description).

図３は本発明に係る半導体結晶の一部を示す断面図である。図に示すように、図１、図２に示した半導体結晶成長用基板、すなわち半導体結晶成長用基板本体１１の外周部に保護膜１４が形成された半導体結晶成長用基板上にＡｌＮからなるバッファ層２１が形成されている。すなわち、半導体結晶成長用基板本体１１の表面１３の保護膜１４が形成されていない領域上にバッファ層２１が形成されている。また、バッファ層２１上に膜厚が３μｍのＧａＮ結晶からなる半導体層２２が形成されている。   FIG. 3 is a cross-sectional view showing a part of a semiconductor crystal according to the present invention. As shown in the figure, a buffer made of AlN is formed on the semiconductor crystal growth substrate shown in FIGS. 1 and 2, that is, the semiconductor crystal growth substrate in which the protective film 14 is formed on the outer periphery of the semiconductor crystal growth substrate body 11. Layer 21 is formed. That is, the buffer layer 21 is formed on a region of the surface 13 of the semiconductor crystal growth substrate body 11 where the protective film 14 is not formed. A semiconductor layer 22 made of GaN crystal having a thickness of 3 μm is formed on the buffer layer 21.

続いて、図３に示した半導体結晶の製造方法を図４により説明する。まず、図４（ａ）に示すように、半導体結晶成長用基板本体１１の側面１２を露出させた状態で、半導体結晶成長用基板本体１１の側面１２および表面１３に熱ＣＶＤを用いて保護膜１４を１００ｎｍ成膜する。つぎに、図４（ｂ）に示すように、フォトリソグラフィとフッ酸系エッチャントを用いて、半導体結晶成長用基板本体１１の最外周から２ｍｍより内側の保護膜１４を剥離する。つぎに、レジストを剥離して有機洗浄を行ったのち、保護膜１４を剥離しない程度にフッ酸溶液で再度洗浄し、清浄表面を得る。つぎに、ＭＯＣＶＤ装置に洗浄済の半導体結晶成長用基板を装填し、水素雰囲気下で昇温してサーマルクリーニングを行う。つぎに、図４（ｃ）に示すように、このサーマルクリーニングを行ったのち、半導体結晶成長用基板本体１１上にバッファ層２１を結晶成長する。つぎに、図４（ｄ）に示すように、バッファ層２１上に半導体層２２を成長する。   Next, a method for manufacturing the semiconductor crystal shown in FIG. 3 will be described with reference to FIG. First, as shown in FIG. 4A, a protective film is formed on the side surface 12 and the surface 13 of the semiconductor crystal growth substrate body 11 using thermal CVD with the side surface 12 of the semiconductor crystal growth substrate body 11 exposed. 14 is deposited to a thickness of 100 nm. Next, as shown in FIG. 4B, the protective film 14 inside 2 mm from the outermost periphery of the semiconductor crystal growth substrate body 11 is peeled off using photolithography and a hydrofluoric acid etchant. Next, after the resist is peeled off and organic cleaning is performed, the surface is washed again with a hydrofluoric acid solution to the extent that the protective film 14 is not peeled off to obtain a clean surface. Next, a cleaned semiconductor crystal growth substrate is loaded into the MOCVD apparatus, and the temperature is raised in a hydrogen atmosphere to perform thermal cleaning. Next, as shown in FIG. 4C, after this thermal cleaning, the buffer layer 21 is grown on the semiconductor crystal growth substrate body 11. Next, as shown in FIG. 4D, a semiconductor layer 22 is grown on the buffer layer 21.

上述した半導体結晶成長用基板、半導体結晶においては、半導体結晶成長用基板本体１１の外周部に形成された保護膜１４によって半導体層２２の構成元素と半導体結晶成長用基板本体１１とが化学反応するのを防止することができるから、半導体結晶成長用基板本体１１上に半導体層２２を形成する際に、半導体結晶成長用基板本体１１の外周部での意図しない反応物の生成を確実に抑えることができる。すなわち、半導体結晶成長用基板本体１１の外周部にＧａによる異常反応を生じさせることなく半導体層２２を成膜することができる。このため、半導体層２２の結晶成長が阻害されることがなく、また反応物のパーティクルが反応していない領域にまき散らされることがないから、反応物のパーティクルにより半導体層２２の結晶欠陥が誘発されることがないので、結晶欠陥の少ない半導体層２２を形成することができるため、半導体結晶の歩留りを向上させることができる。   In the semiconductor crystal growth substrate and semiconductor crystal described above, the constituent elements of the semiconductor layer 22 and the semiconductor crystal growth substrate body 11 chemically react with each other by the protective film 14 formed on the outer periphery of the semiconductor crystal growth substrate body 11. Therefore, when the semiconductor layer 22 is formed on the semiconductor crystal growth substrate body 11, the generation of unintended reactants on the outer periphery of the semiconductor crystal growth substrate body 11 is surely suppressed. Can do. That is, the semiconductor layer 22 can be formed without causing an abnormal reaction due to Ga on the outer periphery of the substrate body 11 for semiconductor crystal growth. For this reason, the crystal growth of the semiconductor layer 22 is not hindered, and the reactant particles are not scattered in the unreacted region, so that the crystal defects of the semiconductor layer 22 are induced by the reactant particles. Therefore, since the semiconductor layer 22 with few crystal defects can be formed, the yield of semiconductor crystals can be improved.

なお、上述した実施の形態においては、窒化物系化合物半導体結晶からなる半導体層がＧａＮ結晶からなる半導体層２２である場合について説明したが、半導体層の窒化物系化合物半導体結晶がＡｌＧａＮ結晶、ＩｎＧａＮ結晶、ＩｎＮ結晶等である場合にも、本発明を適用することができる。この場合、特にＧａおよびＮを含むＡｌＧａＮ結晶、ＩｎＧａＮ結晶で本発明の効果をより享受することができる。   In the above-described embodiment, the case where the semiconductor layer made of a nitride compound semiconductor crystal is the semiconductor layer 22 made of a GaN crystal has been described. However, the nitride compound semiconductor crystal of the semiconductor layer is an AlGaN crystal or InGaN. The present invention can also be applied to a crystal, InN crystal, or the like. In this case, the effects of the present invention can be more enjoyed particularly with AlGaN crystals and InGaN crystals containing Ga and N.

また、上述した実施の形態においては、窒化シリコンからなる保護膜１４を形成したが、保護膜の材料は、半導体層の一般的な成長温度である１０００℃以上の温度領域においても安定であり、また、半導体層２２の構成元素もしくは成長原料と反応しない、もしくは反応しにくい材料であることが要求され、また形成プロセスが容易な物質であることが望ましい。そのような観点からは、保護膜の材料は、窒化シリコン、窒化アルミニウム、窒化チタン、窒化タングステン、酸化シリコン、酸化アルミニウム等が好適である。   In the above-described embodiment, the protective film 14 made of silicon nitride is formed. However, the material of the protective film is stable even in a temperature range of 1000 ° C. or higher, which is a general growth temperature of a semiconductor layer, In addition, the material is required to be a material that does not react or hardly reacts with the constituent elements or the growth raw material of the semiconductor layer 22, and is preferably a material that can be easily formed. From such a viewpoint, the material of the protective film is preferably silicon nitride, aluminum nitride, titanium nitride, tungsten nitride, silicon oxide, aluminum oxide, or the like.

また、上述した実施の形態においては、半導体結晶成長用基板本体１１の表面１３の最外周から２ｍｍまでの部分に保護膜１４を形成したが、保護膜の材料によっては、保護膜上で窒化物系化合物半導体の多結晶等が形成される可能性があるから、その影響を最小限にとどめるために、半導体結晶成長用基板本体の最外周から５ｍｍ以内の部分に保護膜を形成することが望ましい。   Further, in the above-described embodiment, the protective film 14 is formed on the portion from the outermost periphery of the surface 13 of the semiconductor crystal growth substrate body 11 to 2 mm. However, depending on the material of the protective film, the nitride is formed on the protective film. Since there is a possibility that a polycrystal of a compound compound semiconductor may be formed, it is desirable to form a protective film on a portion within 5 mm from the outermost periphery of the substrate body for semiconductor crystal growth in order to minimize the influence. .

また、上述実施の形態においては、半導体層２２の膜厚を３μｍとしたが、半導体層の膜厚が０．５μｍ以上の場合に本発明の効果をより享受することができる。   In the above-described embodiment, the thickness of the semiconductor layer 22 is 3 μm. However, when the thickness of the semiconductor layer is 0.5 μm or more, the effect of the present invention can be further enjoyed.

また、上述実施の形態においては、半導体結晶成長用基板本体１１の外周部にＣＶＤを用いて保護膜１４を成膜したが、半導体結晶成長用基板本体１１の外周部にスパッタ、ＳＯＧ（Spin-on Glass）等を利用してリング状の保護膜を成膜してもよい。このとき、必ず半導体結晶成長用基板本体の側面を覆うことが重要である。   In the above-described embodiment, the protective film 14 is formed on the outer peripheral portion of the semiconductor crystal growth substrate body 11 using CVD. However, sputtering, SOG (Spin- On glass) or the like may be used to form a ring-shaped protective film. At this time, it is important to always cover the side surface of the substrate body for semiconductor crystal growth.

また、ＣＶＤやスパッタのように、非選択的に成膜するプロセスを使用して保護膜を成膜する場合は、上述のように、半導体結晶成長用基板本体１１の表面１３の全面に保護膜１４を成膜してから、半導体層２２を成長する領域の保護膜１４を選択エッチングにて除去してもよいし、逆に、あらかじめフォトリソグラフィを用いて半導体結晶成長用基板本体１１の表面１３の半導体層２２を成長させる領域を保護してから、保護膜１４を成膜してもよい。さらに、ＳＯＧ等の流動性のある物質を使用する場合は、通常通りスピンコータを利用して半導体結晶成長用基板本体１１の表面１３の全面に保護膜１４を成膜してもよいが、半導体結晶成長用基板本体１１の裏面から半導体結晶成長用基板本体１１のハンドリングを行い、半導体結晶成長用基板本体１１の側面部をコート剤に浸しながら回転させることで、半導体結晶成長用基板本体１１の外周部のみ保護膜１４をコートしてもよい。   Further, when the protective film is formed by using a non-selective film forming process such as CVD or sputtering, the protective film is formed on the entire surface 13 of the semiconductor crystal growth substrate body 11 as described above. After the film 14 is formed, the protective film 14 in the region where the semiconductor layer 22 is to be grown may be removed by selective etching. Conversely, the surface 13 of the semiconductor crystal growth substrate body 11 is previously used by photolithography. The protective film 14 may be formed after protecting the region where the semiconductor layer 22 is grown. Further, when a fluid material such as SOG is used, the protective film 14 may be formed on the entire surface 13 of the semiconductor crystal growth substrate body 11 using a spin coater as usual. The semiconductor crystal growth substrate body 11 is handled from the back surface of the growth substrate body 11 and rotated while immersing the side surface portion of the semiconductor crystal growth substrate body 11 in the coating agent. Only a portion of the protective film 14 may be coated.

また、バッファ層２１、半導体層２２の成長には、Ｖ族原料の窒素原子の供給に優れる有機金属気相エピタキシ（ＭＯＶＰＥ）法が好適であるが、本発明の趣旨に反しない限りは分子線エピタキシ（ＭＢＥ）法、ハロゲン化気相エピタキシ（ＨＶＰＥ）法等の結晶成長法を用いてもよい。   Further, for the growth of the buffer layer 21 and the semiconductor layer 22, a metal organic vapor phase epitaxy (MOVPE) method which is excellent in supplying nitrogen atoms as a group V raw material is suitable. A crystal growth method such as an epitaxy (MBE) method or a halogenated vapor phase epitaxy (HVPE) method may be used.

また、半導体結晶成長用基板本体１１上に半導体層２２を形成したとき、保護膜１４を形成していない半導体結晶成長用基板本体１１上に半導体層２２の結晶が形成されるとともに、半導体結晶成長用基板本体１１の周辺の保護膜１４上に半導体層２２の多結晶等が形成される場合がある。ただし、デバイス（素子）作製時の対象となるのは、半導体結晶成長用基板本体１１の表面１３の保護膜１４が形成されていない領域上に形成された半導体層２２の結晶であるため、保護膜１４上の多結晶は形成されたままにしておいてもデバイス作製プロセスに影響を与えない。   In addition, when the semiconductor layer 22 is formed on the semiconductor crystal growth substrate body 11, crystals of the semiconductor layer 22 are formed on the semiconductor crystal growth substrate body 11 on which the protective film 14 is not formed. In some cases, a polycrystalline semiconductor layer 22 or the like is formed on the protective film 14 around the substrate main body 11. However, since a device (element) is a target, a crystal of the semiconductor layer 22 formed on a region where the protective film 14 of the surface 13 of the semiconductor crystal growth substrate body 11 is not formed is protected. Even if the polycrystal on the film 14 is left formed, it does not affect the device manufacturing process.

本発明に係る半導体結晶成長用基板を示す斜視図である。1 is a perspective view showing a semiconductor crystal growth substrate according to the present invention. 本発明に係る半導体結晶成長用基板の一部を示す断面図である。It is sectional drawing which shows a part of substrate for semiconductor crystal growth concerning this invention. 本発明に係る半導体結晶の一部を示す断面図である。It is sectional drawing which shows a part of semiconductor crystal concerning this invention. 図３に示した半導体結晶の製造方法の説明図である。It is explanatory drawing of the manufacturing method of the semiconductor crystal shown in FIG. 従来の半導体結晶の一部を示す断面図である。It is sectional drawing which shows a part of conventional semiconductor crystal.

符号の説明Explanation of symbols

１１…半導体結晶成長用基板本体
１２…側面
１３…表面
１４…保護膜
２１…バッファ層
２２…半導体層 DESCRIPTION OF SYMBOLS 11 ... Substrate main body for semiconductor crystal growth 12 ... Side surface 13 ... Surface 14 ... Protective film 21 ... Buffer layer 22 ... Semiconductor layer

Claims (8)

窒化物系化合物半導体結晶からなる半導体層を成長するための半導体結晶成長用基板において、Ｓｉからなる半導体結晶成長用基板本体の少なくとも側面に保護膜を形成したことを特徴とする半導体結晶成長用基板。   A semiconductor crystal growth substrate for growing a semiconductor layer made of a nitride-based compound semiconductor crystal, wherein a protective film is formed on at least a side surface of the semiconductor crystal growth substrate body made of Si. . 上記半導体結晶成長用基板本体の上記保護膜に覆われている部位が上記半導体層の構成元素と反応しないことを特徴とする請求項１に記載の半導体結晶成長用基板。   2. The semiconductor crystal growth substrate according to claim 1, wherein a portion of the semiconductor crystal growth substrate body covered with the protective film does not react with a constituent element of the semiconductor layer. 上記半導体層の構成元素が、III族元素であることを特徴とする請求項１または２に記載の半導体結晶成長用基板。   3. The semiconductor crystal growth substrate according to claim 1, wherein the constituent element of the semiconductor layer is a group III element. 上記III族元素が、Ｇａであることを特徴とする請求項３に記載の半導体結晶成長用基板。   4. The semiconductor crystal growth substrate according to claim 3, wherein the group III element is Ga. 上記半導体結晶成長用基板本体の側面および表面の最外周から５ｍｍ以内の部分に上記保護膜を形成したことを特徴とする請求項１乃至４のいずれかに記載の半導体結晶成長用基板。   5. The semiconductor crystal growth substrate according to claim 1, wherein the protective film is formed in a portion within 5 mm from the outermost periphery of the side surface and the surface of the semiconductor crystal growth substrate main body. 上記保護膜が、窒化シリコン、窒化アルミニウム、窒化チタン、窒化タングステン、酸化シリコン、酸化アルミニウムのいずれかから構成された膜であることを特徴とする請求項１乃至５のいずれかに記載の半導体結晶成長用基板。   6. The semiconductor crystal according to claim 1, wherein the protective film is a film made of any one of silicon nitride, aluminum nitride, titanium nitride, tungsten nitride, silicon oxide, and aluminum oxide. Growth substrate. 半導体結晶成長用基板に窒化物系化合物半導体結晶からなる半導体層を形成した半導体結晶において、請求項１乃至６のいずれかに記載の上記半導体結晶成長用基板に、少なくともＧａおよびＮを含んだ窒化物系化合物半導体結晶からなる上記半導体層を形成したことを特徴とする半導体結晶。   7. A semiconductor crystal in which a semiconductor layer made of a nitride compound semiconductor crystal is formed on a semiconductor crystal growth substrate, wherein the semiconductor crystal growth substrate according to claim 1 is nitrided containing at least Ga and N. A semiconductor crystal comprising the semiconductor layer made of a physical compound semiconductor crystal. 上記半導体層の層厚が０．５μｍ以上であることを特徴とする請求項７に記載の半導体結晶。   The semiconductor crystal according to claim 7, wherein the semiconductor layer has a thickness of 0.5 μm or more.
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