JP2009212387A5

JP2009212387A5 -

Info

Publication number: JP2009212387A5
Application number: JP2008055415A
Authority: JP
Filing date: 2008-03-05
Publication date: 2011-03-31

Claims

Forming a first insulating layer on one surface of the bond substrate;
Irradiating ions from one surface of the bond substrate to form a first damaged region;
Bringing the first base substrate and the surface of the first insulating layer into contact with each other, and bonding the first base substrate and the bond substrate;
Performing a first heat treatment to separate the bond substrate in the first damaged region to form a first semiconductor layer on the first base substrate;
Planarizing the surface of the first semiconductor layer;
Forming a second insulating layer on one surface of the first semiconductor layer;
Irradiating ions from one surface of the first semiconductor layer to form a second damaged region;
Bringing the second base substrate and the surface of the second insulating layer into contact with each other, and bonding the second base substrate and the first semiconductor layer together;
By performing the second heat treatment, the first semiconductor layer is separated in the second damaged region to form a second semiconductor layer on the first base substrate, and the second base substrate A method for manufacturing a semiconductor substrate, comprising forming a third semiconductor layer thereon.

In claim 1,
Wherein the separated bonded surface of the substrate by flattening method for manufacturing a semiconductor substrate, which comprises reusing the bond substrate.

In claim 1 or 2 ,
Ions irradiated from one surface of the bond substrate contain H ⁺ as a main component, and a method for manufacturing a semiconductor substrate.

In any one of Claims 1 thru | or 3 ,
Ions irradiated from one surface of the first semiconductor layer contain H ₃ ⁺ as a main component, and a method for manufacturing a semiconductor substrate.

In any one of Claims 1 thru | or 4 ,
The planarization of the surface of the first semiconductor layer or the planarization of the surface of the separated bond substrate is performed using any one of etching treatment, laser light irradiation treatment, heat treatment, and polishing treatment. A manufacturing method of a semiconductor substrate characterized by the above.

In any one of Claims 1 thru | or 5,
A method for manufacturing a semiconductor substrate, wherein the surface of the second semiconductor layer is planarized.

In any one of Claims 1 thru | or 6,
A method for manufacturing a semiconductor substrate, comprising planarizing a surface of the third semiconductor layer.

In claim 6 or 7,
The planarization of the surface of the second semiconductor layer or the planarization of the surface of the third semiconductor layer is performed using any one of etching treatment, laser light irradiation treatment, heat treatment, and polishing treatment. A manufacturing method of a semiconductor substrate characterized by the above.

In any one of Claims 1 thru | or 8 ,
A method for manufacturing a semiconductor substrate, wherein a plurality of semiconductor substrates are manufactured using the second semiconductor layer or the third semiconductor layer.

In any one of Claims 1 thru | or 9,
A method for manufacturing a semiconductor substrate, wherein the ions are irradiated using an ion implantation apparatus or an ion doping apparatus.