JP2009212012A - Manufacturing method for light-emitting device, light-emitting device, and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a light-emitting device, capable of firmly jointing a substrate where organic EL elements are prepared and an electrode at high dimensional accuracy while reducing thermal damage on each organic layer constituting an organic EL element and a driving circuit, a light-emitting device manufactured by a manufacturing method for a light-emitting device and which is superior in characteristics, and to provide high-reliability electronic equipment. <P>SOLUTION: The manufacturing method for a light-emitting device comprises: a process of forming barrier ribs 31, by drying up after supplying a fluid material containing a silicone material on a substrate 20 with a plurality of positive electrodes 3 provided so as to partition each positive electrode 3; a process of forming a hole transport layer 4 and a light-emitting layer 5 on each positive electrode 3 partitioned by the barrier ribs 31; and a process of making an adhesive property appear in the vicinity of the surface of the barrier ribs 31, by giving energy to at least a part of a range of the barrier ribs 31 and connecting the barrier ribs 31 and a negative electrode 6, arranged on the substrate 9 by means of the adhesive property appearing on the barrier ribs 31. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a light emitting device, a light emitting device, and an electronic apparatus.

An organic electroluminescent element (hereinafter referred to as “organic EL element”) having a structure in which at least one light-emitting organic layer (organic electroluminescent layer) is sandwiched between a cathode and an anode is applied as compared with an inorganic EL element. The voltage can be significantly reduced, and various light emitting elements can be manufactured.
At present, in order to obtain a higher performance organic EL element, various device structures including material development and improvement have been proposed, and active research is being conducted.
In addition, for this organic EL element, elements of various luminescent colors and elements having high luminance, high efficiency and long life have been developed, and there are a wide variety of practical applications such as use as pixels of display devices and use as light sources. Applications are being studied.

By the way, as shown in Patent Document 1, for example, a light-emitting device using such an organic EL element is one in which a back electrode and a light-emitting layer are stacked on a printing substrate (plastic film), and a transparent electrode substrate (for example, It is manufactured by a method in which a transparent plastic sheet is applied to a thermocompression-bonding roll in a state in which a transparent electrode is deposited, and the electrode and the light emitting layer are bonded together by pressing from above and below under heating. .
Further, for example, Patent Document 2 discloses a method of bonding by bonding of the same organic layers and an appropriate heating temperature for the purpose of stabilizing luminous efficiency and luminance and further reducing power consumption.

However, in any of these methods, sufficient bonding strength cannot be obtained, and peeling may occur at the bonding interface of the light emitting device.
In addition, heating at a relatively high temperature is required during thermocompression bonding. For this reason, there is a concern that the light emitting layer and the electrode may be thermally damaged, and there is a concern that the light emitting characteristics of the obtained light emitting device are deteriorated.

  Furthermore, in the organic light emitting device described in Patent Document 2, the partition walls (black matrix) that partition the pixel spaces are made of chromium or various resin materials. In such a structure, the partition walls and the substrate bonded thereto are used. Therefore, there is a risk that moisture, oxygen, etc. in the atmosphere may enter each pixel space. As a result, the light emitting layer in each pixel space is deteriorated and deteriorated, and the light emission characteristics of the light emitting device may be further deteriorated.

JP-A-6-283265 JP 2002-203675 A

  An object of the present invention is to firmly bond a substrate provided with an organic EL element and an electrode with high dimensional accuracy while reducing thermal damage to each organic material layer and driving circuit constituting the organic EL element. An object of the present invention is to provide a method for manufacturing a light emitting device, a light emitting device with excellent characteristics manufactured by the method for manufacturing a light emitting device, and a highly reliable electronic device.

Such an object is achieved by the present invention described below.
In the method for manufacturing a light emitting device of the present invention, the partition wall portion is formed by supplying a liquid material containing a silicone material to the substrate so as to partition the plurality of first electrodes provided on the substrate, followed by drying. A first step of forming;
A second step of forming a light emitting layer in a plurality of pixel spaces defined by the partition;
By applying energy to the partition wall, an adhesive property is developed in the vicinity of the surface of the partition wall, and by this adhesion, the partition wall portion and the second electrode are joined to obtain a light emitting device. It is characterized by having.
Thereby, the substrate on which the organic EL element is provided and the electrode can be firmly bonded with high dimensional accuracy while reducing thermal damage to each organic material layer and drive circuit constituting the organic EL element. .

In the method for manufacturing a light emitting device of the present invention, it is preferable that the main skeleton of the silicone material is composed of polydimethylsiloxane.
Such a compound is relatively easily available and inexpensive, and by applying energy to the partition wall containing such a compound, the methyl group constituting the compound is easily cleaved, and as a result, the partition wall Since the adhesiveness can be surely expressed in the part, it is preferably used as a silicone material.

In the method for manufacturing a light emitting device of the present invention, the silicone material preferably has a silanol group.
As a result, when the partition is obtained by drying the liquid coating, the hydroxyl groups of the adjacent silicone materials are bonded to each other, and the resulting partition has excellent film strength.
In the method for manufacturing a light emitting device according to the present invention, the liquid material is preferably one in which a light shielding material is dispersed.
Thereby, the partition part formed with the said liquid material will have the outstanding light-shielding property. As a result, the light generated from the light emitting layer in each pixel space can be prevented from interfering with each other, and display unevenness can be prevented from occurring in the light emitting device.

In the method for manufacturing a light emitting device of the present invention, in the third step, after the partition wall portion and the second electrode are brought into contact with each other, the partition wall portion and the partition wall portion are formed by applying the energy to the partition wall portion. It is preferable to join the second electrode.
Before the energy is applied, in the state where the partition wall and the second electrode are in contact with each other, they are not joined to each other, so that their relative positions can be easily adjusted (shifted). Thereby, the assembly accuracy (dimensional accuracy) of the finally obtained light emitting device can be reliably increased.

In the method for manufacturing a light emitting device of the present invention, it is preferable that in the first step, the liquid material is supplied onto the substrate by a droplet discharge method.
According to the droplet discharge method, the liquid material can be selectively supplied as droplets to the partition wall formation region. This eliminates the need for forming a resist mask on the coating obtained by drying the liquid material and patterning the coating, thereby shortening the time required to form the partition and reducing the manufacturing cost. be able to.

In the method for manufacturing a light emitting device of the present invention, the application of the energy in the third step includes a method of irradiating the partition wall with energy rays, a method of heating the partition wall, and a compressive force applied to the partition wall. Preferably, it is performed by at least one of the following methods.
Thereby, the surface of a partition part can be activated efficiently. In addition, since the molecular structure in the partition wall is not cut more than necessary, it is possible to avoid deterioration of the properties of the partition wall.

In the manufacturing method of the light-emitting device of this invention, it is preferable that the said energy ray is an ultraviolet-ray with a wavelength of 126-300 nm.
If the wavelength of the energy beam is within such a range, the amount of energy applied is optimized, so that the molecular bond forming the skeleton in the partition wall is prevented from being broken more than necessary, and the surface from the partition wall to the surface. Nearby molecular bonds can be selectively cleaved. Thereby, adhesiveness can be made to express reliably in a partition part, preventing the characteristic of a partition part falling.

In the manufacturing method of the light-emitting device of this invention, it is preferable that the temperature of the said heating is 25-100 degreeC.
Thereby, it is possible to reliably increase the bonding strength while reliably preventing the partition wall from being deteriorated or deteriorated by heat.
In the manufacturing method of the light-emitting device of this invention, it is preferable that the said compressive force is 0.2-10 Mpa.
Accordingly, it is possible to reliably increase the bonding strength of the light emitting device while preventing damage and the like from occurring in each part of the light emitting device obtained when the pressure is too high.

In the method for manufacturing a light emitting device of the present invention, it is preferable that the application of energy in the third step is performed in an air atmosphere.
Thereby, it is not necessary to spend time and cost to control the atmosphere, and energy can be applied more easily.
In the method for manufacturing a light emitting device of the present invention, it is preferable that the partition wall has a height of 100 nm to 100 μm.
Thereby, these can be more firmly joined, preventing the dimensional accuracy of the light-emitting device formed by joining a partition part and a 2nd electrode falling remarkably. In addition, the light emitting layer provided on each first electrode can be reliably separated.

In the method for manufacturing a light emitting device according to the present invention, it is preferable that at least a portion of the substrate that is in contact with the partition wall is made of a silicon material as a main material.
Thereby, even if it does not perform surface treatment on the surface of a board | substrate, the joint strength of a board | substrate and a partition part can be improved.
In the method for manufacturing a light emitting device according to the present invention, it is preferable that at least a portion of the second electrode that is in contact with the partition wall is made of a metal material as a main material.
Accordingly, the bonding strength between the second electrode and the partition wall can be increased without performing surface treatment on the surface of the second electrode.

In the method for manufacturing a light-emitting device according to the present invention, it is preferable that the substrate and the second electrode are subjected to surface treatment for improving adhesion to the partition wall in advance on a surface in contact with the partition wall. .
As a result, the surface of the substrate and the second electrode that contacts the partition wall is cleaned and activated, and the partition wall easily acts chemically on this surface. As a result, the bonding strength between the substrate and the second electrode and the partition wall can be increased.

In the method for manufacturing a light emitting device of the present invention, the surface treatment is preferably plasma treatment or ultraviolet irradiation treatment.
Thereby, in order to form a partition part, the surface which contacts the partition part of a board | substrate and a 2nd electrode can be optimized especially.
In the method for manufacturing a light emitting device of the present invention, after the third step, the light emitting device may further include a step of performing a process for increasing the bonding strength between the partition wall and the second electrode. preferable.
Thereby, the further improvement of the joint strength of a light-emitting device can be aimed at.

In the method for manufacturing a light emitting device of the present invention, the step of increasing the bonding strength includes a method of irradiating the partition wall with energy rays, a method of heating the partition wall, and applying a compressive force to the partition wall. It is preferably carried out by at least one of the methods.
Thereby, the further improvement of the joint strength of a light-emitting device can be aimed at easily.
The light emitting device of the present invention is manufactured by the method for manufacturing a light emitting device of the present invention.
Thereby, a highly reliable light-emitting device can be obtained.
An electronic apparatus according to the present invention includes the light emitting device according to the present invention.
As a result, a highly reliable electronic device can be obtained.

Hereinafter, a method for manufacturing a light-emitting element, a light-emitting element, a light-emitting device, and an electronic device of the present invention will be described in detail based on preferred embodiments.
<Active matrix display device>
<< First Embodiment >>
First, an active matrix display device (light emitting device of the first embodiment) will be described as an example of a light emitting device manufactured by the method for manufacturing a light emitting device of the present invention.

FIG. 1 is a longitudinal sectional view showing a first embodiment of an active matrix display device to which the light emitting device of the present invention is applied, and FIGS. 2 to 5 illustrate a method for manufacturing the active matrix display device shown in FIG. FIG. In the following description, the upper side in FIGS. 1 to 5 is referred to as “upper” and the lower side is referred to as “lower”.
An active matrix display device (hereinafter simply referred to as “display device”) 10 shown in FIG. 1 includes a TFT circuit substrate (substrate) 20 and an organic EL element (a light emitting device of the present invention) provided on the substrate 20. ) 1 and an upper substrate 9 facing the TFT circuit substrate 20.

The TFT circuit substrate 20 includes a substrate 21 and a circuit unit 22 formed on the substrate 21.
The substrate 21 serves as a support for each part constituting the display device 10, and the upper substrate 9 functions as, for example, a protective film for protecting the organic EL element 1.
In addition, since the display device 10 according to the present embodiment has a configuration for extracting light from the substrate 21 side (bottom emission type), the substrate 21 is substantially transparent (colorless transparent, colored transparent, translucent). The upper substrate 9 is not particularly required to be transparent.
As such a substrate 21, a substrate having a relatively high hardness among various glass material substrates and various resin substrates is suitably used.

On the other hand, as the upper substrate 9, a transparent one of various glass material substrates and various resin substrates is selected. For example, glass materials such as quartz glass and soda glass, polyethylene terephthalate, polyethylene naphthalate, polypropylene, cycloolefin A substrate composed mainly of a resin material such as polymer, polyamide, polyethersulfone, polymethyl methacrylate, polycarbonate, or polyarylate can be used.
A cathode (second electrode) 6 is provided on the entire lower surface of the upper substrate 9.

Although the average thickness of the board | substrate 21 is not specifically limited, It is preferable that it is about 1-30 mm, and it is more preferable that it is about 5-20 mm. On the other hand, the average thickness of the upper substrate 9 is not particularly limited, but is preferably about 0.1 to 30 mm, and more preferably about 0.1 to 10 mm.
The circuit unit 22 includes a base protective layer 23 formed on the substrate 21, a driving TFT (switching element) 24 formed on the base protective layer 23, a first interlayer insulating layer 25, and a second interlayer insulating layer. 26.

The driving TFT 24 includes a semiconductor layer 241, a gate insulating layer 242 formed on the semiconductor layer 241, a gate electrode 243 formed on the gate insulating layer 242, a source electrode 244, and a drain electrode 245. ing.
On the circuit part 22, the organic EL elements 1 are provided corresponding to the respective driving TFTs 24. Adjacent organic EL elements 1 are partitioned by a partition wall (bank) 31.

  In the present embodiment, the partition wall portion 31 is made of a film mainly composed of a silicone material, and is formed with the cathode 6 provided on the upper substrate 9 due to the adhesiveness developed by applying energy to at least a part of the region. Bonded (joined). That is, the partition wall portion 31 functions as a partition wall (bank) that partitions each organic EL element 1 and also functions as a bonding film that bonds the partition wall portion 31 and the cathode 6.

  As described above, in the bonding based on the adhesiveness developed in the partition wall 31, the partition wall 31 and the cathode 6 are firmly bonded with high dimensional accuracy even when the bonding temperature condition is set to be relatively low. Therefore, the organic material layer such as the hole transport layer 4 and the light emitting layer 5 and the driving circuit can be prevented from being thermally damaged, the optical characteristics and the display characteristics are excellent, and the cathode 6 is not easily peeled off. Can be obtained. The configuration of the partition wall 31 will be described in detail later.

In the present embodiment, the anode (first electrode) 3 of each organic EL element 1 constitutes a pixel electrode and is electrically connected to the drain electrode 245 of each driving TFT 24 by the wiring 27. The hole transport layer 4 and the light emitting layer 5 are individually formed for each organic EL element 1, and the cathode 6 is a common electrode.
The display device 10 may be monochromatic display, and color display is also possible by selecting a light emitting material used for each organic EL element 1.

Hereinafter, the organic EL element 1 will be described in detail.
As shown in FIG. 1, the organic EL element 1 was laminated in the order of the hole transport layer 4 and the light emitting layer 5 from the anode 3 side between the anode 3, the cathode 6, and the anode 3 and the cathode 6. An organic semiconductor layer (laminated body) is provided.
The anode 3 is an electrode that injects holes into the hole transport layer 4.

As a constituent material (anode material) of the anode 3, it is preferable to use a material having a large work function, excellent conductivity, and translucency.
Examples of such an anode material include ITO (composite of indium oxide and zinc oxide), oxides such as SnO ₂ , Sb-containing SnO ₂ , and Al-containing ZnO, Au, Pt, Ag, Cu, or these. An alloy etc. are mentioned, At least 1 sort (s) of these can be used.

The average thickness of the anode 3 is not particularly limited, but is preferably about 10 to 200 nm, and more preferably about 50 to 150 nm. If the thickness of the anode 3 is too thin, the function as the anode 3 may not be sufficiently exhibited. On the other hand, if the anode 3 is too thick, the light transmittance may be remarkably lowered depending on the type of anode material. In the case where the configuration of the organic EL element 1 is a top emission type, there is a possibility that it is not suitable for practical use.
As the anode material, for example, a conductive resin material such as polythiophene or polypyrrole can be used.

On the other hand, the cathode 6 is an electrode for injecting electrons into the light emitting layer 5 described later. As a constituent material of the cathode 6, it is preferable to use a material having a small work function.
Examples of the constituent material of the cathode 6 include Li, Mg, Ca, Sr, La, Ce, Er, Eu, Sc, Y, Yb, Ag, Cu, Al, Cs, Rb, and alloys containing these. These can be used alone or in combination of two or more thereof (for example, a multi-layer laminate).

In particular, when an alloy is used as the constituent material of the cathode 6, it is preferable to use an alloy containing a stable metal element such as Ag, Al, or Cu, specifically an alloy such as MgAg, AlLi, or CuLi. By using such an alloy as a constituent material of the cathode 6, the electron injection efficiency and stability of the cathode 6 can be improved.
Although the average thickness of such a cathode 6 is not specifically limited, It is preferable that it is about 100-10000 nm, and it is more preferable that it is about 200-500 nm.

In addition, since the light emitting element 1 of this embodiment is a bottom emission type, the cathode 6 is not particularly required to have light transmittance.
The hole transport layer 4 has a function of transporting holes injected from the anode 3 to the light emitting layer 5.
Examples of the constituent material (hole transport material) of the hole transport layer 4 include polyarylamine, fluorene-arylamine copolymer, fluorene-bithiophene copolymer, poly (N-vinylcarbazole), polyvinylpyrene, Polyvinylanthracene, polythiophene, polyalkylthiophene, polyhexylthiophene, poly (p-phenylene vinylene), polytinylene vinylene, pyrene formaldehyde resin, ethyl carbazole formaldehyde resin or derivatives thereof, and the like, one or two of these A combination of more than one species can be used.

The average thickness of the hole transport layer 4 is not particularly limited, but is preferably about 10 to 150 nm, and more preferably about 50 to 100 nm.
A light emitting layer (organic light emitting layer) 5 is provided on the hole transport layer 4. Electrons are supplied (injected) to the light emitting layer 5 from a cathode 6 described later, and holes are supplied from the hole transport layer 4. In the light emitting layer 5, holes and electrons are recombined, and excitons (excitons) are generated by the energy released during the recombination. When the excitons return to the ground state, energy (fluorescence or phosphorescence) is generated. ) Is emitted (emitted).

Examples of the constituent material of the light emitting layer 5 include thiadiazole compounds such as benzothiadiazole, 1,3,5-tris [(3-phenyl-6-tri-fluoromethyl) quinoxalin-2-yl] benzene (TPQ1), 1 , 3,5-tris [{3- (4-t-butylphenyl) -6-trisfluoromethyl} quinoxalin-2-yl] benzene (TPQ2), phthalocyanine, copper phthalocyanine (CuPc), Metallic or metal-free phthalocyanine compounds such as iron phthalocyanine, small molecules such as tris (8-hydroxyquinolinolate) aluminum (Alq ₃ ), factory (2-phenylpyridine) iridium (Ir (ppy) ₃ ) Fluorene polymers such as dioctylfluorene, oxadia Examples thereof include polymers such as sol polymers, triazole polymers, and carbazole polymers, and these can be used alone or in combination.

Although the average thickness of such a light emitting layer 5 is not specifically limited, It is preferable that it is about 10-150 nm, and it is more preferable that it is about 50-100 nm.
In addition, between the anode 3 and the hole transport layer 4, for example, the Fermi level of the anode 3 and the highest occupied orbit of the hole transport layer 4 (of the most orbital molecular orbitals occupied by electrons) An anode buffer layer that relaxes the energy difference from the high orbital (HOMO) level, so-called carrier injection barrier, and facilitates the movement of holes from the anode 3 to the hole transport layer 4 may be provided.

Examples of the constituent material of the anode buffer layer include SiO ₂ , and one or more of these can be used in combination.
The average thickness of the anode buffer layer is preferably as thin as possible. Specifically, the anode buffer layer is preferably 10 nm or less, and more preferably 7 nm or less.
Further, an electron transport layer having a function of transporting electrons injected from the cathode 6 to the light emitting layer 5 may be provided between the cathode 6 and the light emitting layer 5. Furthermore, an electron injection layer for improving the injection efficiency of electrons from the cathode 6 to the electron transport layer may be provided between the electron transport layer and the cathode 6.

As a constituent material (electron transport material) of the electron transport layer, for example, a benzene compound (starburst compound), a naphthalene compound, a phenanthrene compound, a chrysene compound, a perylene compound, an anthracene compound, a pyrene compound, Acridine compounds, stilbene compounds, thiophene compounds, butadiene compounds, coumarin compounds, quinoline compounds, bistyryl compounds, pyrazine compounds, quinoxaline compounds, benzoquinone compounds, naphthoquinone compounds, anthraquinone compounds, oxadi Azole compounds, triazole compounds, oxazole compounds, anthrone compounds, fluorenone compounds, diphenoquinone compounds, stilbenequinone compounds, anthraquinodimethane compounds, thiopyrandio Sid compounds, fluorenylidene methane series compounds, diphenyldicyanoethylene-based compounds, fullerene-based compound, phthalocyanine compound, 8-hydroxyquinoline aluminum (Alq _3), benzoxazole or benzothiazole as a complex having a ligand Various metal complexes etc. are mentioned.

In addition, as a constituent material (electron transport material) of the electron transport layer, for example, a polymer material such as an oxadiazole polymer (polyoxadiazole) or a triazole polymer (polytriazole) may be used. it can.
Although the average thickness of an electron carrying layer is not specifically limited, It is preferable that it is about 1-100 nm, and it is more preferable that it is about 20-50 nm.

  Examples of the constituent material (electron injection material) of the electron injection layer include 8-hydroxyquinoline, oxadiazole, or derivatives thereof (for example, metal chelate oxinoid compounds containing 8-hydroxyquinoline). In addition, one or more of these can be used in combination (for example, as a multi-layer laminate), and various inorganic insulating materials, various inorganic semiconductor materials, and the like can be used.

By configuring the electron injection layer using an inorganic insulating material or an inorganic semiconductor material as a main material, current leakage can be effectively prevented, electron injection performance can be improved, and durability can be improved.
Examples of such inorganic insulating materials include alkali metal chalcogenides (oxides, sulfides, selenides, tellurides), alkaline earth metal chalcogenides, alkali metal halides, and alkaline earth metal halides. Of these, one or two or more of these can be used in combination. By forming the electron injection layer using these as main materials, the electron injection property can be further improved.
Examples of the inorganic semiconductor material include an oxide containing at least one element of Ba, Ca, Sr, Yb, Al, Ga, In, Li, Na, Cd, Mg, Si, Ta, Sb, and Zn. , Nitrides, oxynitrides, and the like, and one or more of these can be used in combination.

Next, a method for manufacturing the light emitting device of the present invention will be described by taking as an example the case of manufacturing the active matrix display device shown in FIG.
The manufacturing method of the light emitting device of the present invention includes a first stacked body manufacturing process [1], a second stacked body manufacturing process [2], and a first stacked body and second stacked body joining process [ 3]. Hereinafter, each process is explained in full detail.

[1] Step of Producing First Laminate First, as shown in FIG. 2A, an upper substrate 9 is prepared, and a cathode 6 is formed on the upper substrate 9.
The cathode 6 is formed by, for example, a vapor phase process using a sputtering method, a vacuum deposition method, a CVD method, a spin coating method (pyrosol method), a casting method, a micro gravure coating method, a gravure coating method, a bar coating method, a roll. It can be formed by a liquid phase process using a coating method, a wire bar coating method, a dip coating method, a spray coating method, a screen printing method, a flexographic printing method, an offset printing method, an inkjet printing method, or the like.

These methods are selected in consideration of the physical stability and / or chemical characteristics such as the thermal stability of the constituent material of the cathode 6 and the solubility in a solvent.
In the present embodiment, since the cathode 6 is formed on the entire surface of the upper substrate 9, it is not necessary to use a mask. For this formation, a vapor phase process using a vacuum evaporation method is preferably used. It is done.
As described above, the first stacked body 101 is obtained.

[2] Step of Producing Second Laminate [2A] First, a TFT circuit substrate 20 as shown in FIG. 2B is produced.
[2A-i] First, a substrate 21 is prepared, and an average thickness of about 200 to 500 nm is formed on the substrate 21 by, for example, plasma CVD using TEOS (tetraethoxysilane) or oxygen gas as a source gas. A base protective layer 23 composed of silicon oxide as a main material is formed.

[2A-ii] Next, the driving TFT 24 is formed on the base protective layer 23.
[2A-iii] First, amorphous silicon having an average thickness of about 30 to 70 nm is mainly formed on the base protective layer 23 by the plasma CVD method or the like with the substrate 21 heated to about 350 ° C. A semiconductor film is formed.
[2A-iv] Next, the semiconductor film is crystallized by laser annealing, solid phase growth, or the like to change the amorphous silicon into polysilicon.
Here, in the laser annealing method, for example, a line beam having a beam length of 400 mm is used with an excimer laser, and the output intensity is set to about 200 mJ / cm ² , for example. As for the line beam, the line beam is scanned so that a portion corresponding to 90% of the peak value of the laser intensity in the short dimension direction overlaps each region.

[2A-v] Next, the semiconductor film is patterned to form islands, and, for example, a plasma CVD method using TEOS (tetraethoxysilane) or oxygen gas as a source gas so as to cover each island-shaped semiconductor layer 241. Thus, a gate insulating layer 242 composed mainly of silicon oxide or silicon nitride having an average thickness of about 60 to 150 nm is formed.
[2A-vi] Next, a conductive film composed mainly of a metal such as aluminum, tantalum, molybdenum, titanium, or tungsten is formed on the gate insulating layer by, for example, sputtering, and then patterned to form a gate. An electrode 243 is formed.

[2A-vii] Next, in this state, high concentration phosphorus ions are implanted to form source / drain regions in a self-aligned manner with respect to the gate electrode 243. Note that a portion where no impurity is introduced becomes a channel region.
[2A-viii] Next, the source electrode 244 and the drain electrode 245 electrically connected to the driving TFT 24 are formed.
[2A-ix] First, the first interlayer insulating layer 25 is formed so as to cover the gate electrode 243, and then a contact hole is formed.

[2A-x] Next, the source electrode 244 and the drain electrode 245 are formed in the contact hole.
[2A-xi] Next, a wiring (relay electrode) 27 for electrically connecting the drain electrode 245 and the anode 3 is formed. First, a second interlayer insulating layer 26 is formed on the first interlayer insulating layer 25 and then a contact hole is formed. Next, a wiring 27 is formed in the contact hole.
As described above, the TFT circuit substrate 20 is obtained.

[2B] Next, as shown in FIG. 2C, the anode (pixel electrode) 3 is formed on the second interlayer insulating layer 26 provided in the TFT circuit substrate 20 so as to be in contact with the wiring 27.
The anode 3 is formed by, for example, a vapor phase process using a sputtering method, a vacuum deposition method, a CVD method, a spin coating method (pyrosol method), a casting method, a micro gravure coating method, a gravure coating method, a bar coating method, a roll. It can be formed by a liquid phase process using a coating method, a wire bar coating method, a dip coating method, a spray coating method, a screen printing method, a flexographic printing method, an offset printing method, an inkjet printing method, or the like.
These methods are selected in consideration of the physical stability and / or chemical characteristics such as thermal stability of the constituent material of the anode 3 and solubility in a solvent.

[2C] Next, partition portions (banks) 31 shown in FIG. 3D are formed on the second interlayer insulating layer 26 so as to partition the anodes 3. That is, the partition wall 31 is formed in a region where the surface of the second interlayer insulating layer 26 exposed between the anodes 3 and the edge of each anode 3 are combined (hereinafter referred to as “partition wall formation region 31a”). To do.
In this embodiment, the partition wall 31 is formed by supplying a liquid material containing a silicone material to the second interlayer insulating layer 26 and the partition wall formation region 31a of each anode 3 to form a liquid film, It is formed by drying. Hereinafter, the formation process of the partition part 31 is explained in full detail.

[2C-i] First, a liquid material containing a silicone material is supplied onto the second interlayer insulating layer 26 and each anode 3 so as to cover at least the partition wall forming region 31a.
Examples of methods for supplying the liquid material include dipping, spin coating, casting, micro gravure coating, gravure coating, bar coating, roll coating, wire bar coating, dip coating, and spray coating. , Screen printing method, flexographic printing method, offset printing method, ink jet method, microcontact printing method and the like, and one or more of them can be used in combination.

  Among these, it is particularly preferable to use a droplet discharge method. By using the droplet discharge method, it is possible to selectively supply droplets to the second interlayer insulating layer 26 and the partition wall formation region 31a of each anode 3 without supplying the partition wall 31 non-formation region. it can. As a result, a liquid film patterned into the shape of the partition wall formation region 31a, that is, a predetermined shape, is formed on the upper surfaces of the second interlayer insulating layer 26 and the respective anodes 3. This eliminates the need for forming a resist layer on the film and patterning the film using the resist layer as a mask. Therefore, it is possible to shorten the time until the partition wall 31 is formed and to reduce the manufacturing cost. .

  Further, as a method for supplying the liquid material, it is more preferable to use an inkjet method using an inkjet head as a droplet discharge head. According to the ink jet method, a liquid material can be supplied as droplets to a target region (position) with excellent positional accuracy. When the driving element is a piezo element, the size (size) of the droplet can be adjusted relatively easily by appropriately setting the frequency and the viscosity of the liquid material. If the size is reduced, a liquid film corresponding to the shape of the partition wall formation region 31a can be reliably formed even if the shape of the partition wall formation region 31a is fine.

  In general, the viscosity (25 ° C.) of the liquid material is preferably about 0.5 to 200 mPa · s, more preferably about 3 to 20 mPa · s. By setting the viscosity of the liquid material in such a range, it is possible to discharge the droplets more stably and to discharge a droplet having a size capable of drawing the partition wall forming region 31a having a fine shape. it can. Furthermore, when the liquid film composed of this liquid material is dried in the next step [3], a sufficient amount of silicone material for forming the partition wall portion 31 is contained in the liquid material. it can.

  In addition, if the viscosity of the liquid material is within such a range, specifically, the amount of droplets (the amount of one droplet of the liquid material) is about 0.1 to 40 pL on average, more realistically. It can be set to about 1 to 30 pL. Thereby, since the landing diameter of the droplet when supplied onto the second interlayer insulating layer 26 and each anode 3 becomes small, the partition wall portion 31 having a fine shape can be surely formed.

Furthermore, by appropriately setting the droplets supplied to the second interlayer insulating layer 26 and the partition wall formation region 31a of each anode 3, the height of the partition wall 31 formed can be controlled relatively easily. .
In the case where the liquid material is supplied using a supply method other than the droplet discharge method, for example, the liquid material is supplied over the entire surface of the second interlayer insulating layer 26 so as to cover each anode 3. A liquid film is formed. In the subsequent step [2C-ii], the liquid film is dried and then patterned into a planar shape of the partition wall forming region 31a.

  The liquid material supplied onto the second interlayer insulating layer 26 and each anode 3 contains a silicone material as described above. However, when the silicone material alone is liquid and has a desired viscosity range, The material can be used as a liquid material as it is. When the silicone material alone forms a solid or highly viscous liquid, a solution or dispersion of the silicone material can be used as the liquid material.

  Examples of the solvent or dispersion medium for dissolving or dispersing the silicone material include inorganic solvents such as ammonia, water, hydrogen peroxide, carbon tetrachloride, and ethylene carbonate, and ketone solvents such as methyl ethyl ketone (MEK) and acetone. Alcohol solvents such as methanol, ethanol and isobutanol, ether solvents such as diethyl ether and diisopropyl ether, cellosolve solvents such as methyl cellosolve, aliphatic hydrocarbon solvents such as hexane and pentane, toluene, xylene, benzene, etc. Aromatic hydrocarbon solvents, aromatic heterocyclic compounds solvents such as pyridine, pyrazine, furan, amide solvents such as N, N-dimethylformamide (DMF), halogen compound solvents such as dichloromethane and chloroform, ethyl acetate Esters such as methyl acetate Various organic solvents such as solvents, sulfur compound solvents such as dimethyl sulfoxide (DMSO), sulfolane, nitrile solvents such as acetonitrile, propionitrile, acrylonitrile, organic acid solvents such as formic acid, trifluoroacetic acid, or the like A mixed solvent containing can be used.

The silicone material is contained in the liquid material, and is configured as a main material of the partition wall portion 31 formed by drying the liquid material in the next step [2C-ii].
Here, the “silicone material” is a compound having a polyorganosiloxane skeleton, and usually refers to a compound in which the main skeleton (main chain) portion is mainly composed of repeating organosiloxane units, and from a part of the main chain. It may have a protruding branched structure, may be a cyclic body in which the main chain is cyclic, or may be a straight chain in which the ends of the main chain are not connected to each other.

  For example, in a compound having a polyorganosiloxane skeleton, the organosiloxane unit has a structural unit represented by the following general formula (1) at the terminal portion and a structural unit represented by the following general formula (2) at the connecting portion. In addition, the branch part has a structural unit represented by the following general formula (3).

［式中、各Ｒは、それぞれ独立して、置換または無置換の炭化水素基を表し、各Ｚは、それぞれ独立して、水酸基または加水分解基を表し、Ｘはシロキサン残基を表し、ａは０または１〜３の整数を表し、ｂは０または１〜２の整数を表し、ｃは０または１を表す。］

[In the formula, each R independently represents a substituted or unsubstituted hydrocarbon group, each Z independently represents a hydroxyl group or a hydrolyzable group, X represents a siloxane residue, a Represents an integer of 0 or 1 to 3, b represents an integer of 0 or 1 to 2, and c represents 0 or 1. ]

The siloxane residue is a substituent that is bonded to a silicon atom of an adjacent structural unit through an oxygen atom and forms a siloxane bond. Specifically, it has an —O— (Si) structure (Si is a silicon atom of an adjacent structural unit).
In such a silicone material, the polyorganosiloxane skeleton is preferably linear, that is, composed of the structural unit of the general formula (1) and the structural unit of the general formula (2). Thereby, in the next step [2D], since the partition wall portion 31 is formed so that the silicone materials contained in the liquid material are entangled with each other, the obtained partition wall portion 31 has excellent film strength.
Specifically, examples of the compound having a polyorganosiloxane skeleton having such a configuration include those represented by the following general formula (4).

［式中、各Ｒは、それぞれ独立して、置換または無置換の炭化水素基を表し、各Ｚは、それぞれ独立して、水酸基または加水分解基を表し、ａは０または１〜３の整数を表し、ｍは０または１以上の整数を表し、ｎは０または１以上の整数を表す。］

[Wherein, each R independently represents a substituted or unsubstituted hydrocarbon group, each Z independently represents a hydroxyl group or a hydrolyzable group, and a is an integer of 0 or 1 to 3] , M represents 0 or an integer of 1 or more, and n represents 0 or an integer of 1 or more. ]

  In the general formula (1) to the general formula (4), examples of the group R (substituted or unsubstituted hydrocarbon group) include, for example, alkyl groups such as a methyl group, an ethyl group, and a propyl group, a cyclopentyl group, and a cyclohexyl group. Cycloalkyl groups such as phenyl groups, aryl groups such as phenyl groups, tolyl groups, and biphenylyl groups, and aralkyl groups such as benzyl groups and phenylethyl groups. Furthermore, some or all of the hydrogen atoms bonded to the carbon atoms of these groups are: I) a halogen atom such as a fluorine atom, a chlorine atom or a bromine atom, II) an epoxy group such as a glycidoxy group, III) Examples include (meth) acryloyl groups such as methacryl groups, IV) groups substituted with anionic groups such as carboxyl groups and sulfonyl groups, and the like.

Hydrolytic groups include alkoxy groups such as methoxy group, ethoxy group, propoxy group, and butoxy group, ketoxime groups such as dimethyl ketoxime group and methylethyl ketoxime group, acyloxy groups such as acetoxy group, isopropenyloxy group, isopropenyl group, and the like. Examples include alkenyloxy groups such as butenyloxy groups.
In the general formula (4), m and n represent the degree of polymerization of the polyorganosiloxane, and the total of m and n (m + n) is preferably an integer of about 5 to 10,000. It is more preferably an integer of about 50 to 1000. By setting within this range, the viscosity of the liquid material can be set relatively easily within the above-described range.

  Among such silicone materials, it is particularly preferable that the main skeleton is composed of polydimethylsiloxane. That is, in the general formula (4), each group R is preferably a methyl group. Such a compound is relatively easily available and inexpensive, and in the subsequent step [2E], by applying energy to the partition wall portion 31, the methyl group is easily cleaved, and as a result, the partition wall portion Since the adhesiveness can be surely developed in 31, it is preferably used as a silicone material.

  Furthermore, the silicone material preferably has a silanol group. That is, in the general formula (4), each group Z is preferably a hydroxyl group. Thus, in the next step [2C-ii], when the partition wall 31 is obtained by drying the liquid film, the hydroxyl groups of adjacent silicone materials are bonded to each other, and the obtained partition wall 31 has excellent film strength. It will be. Further, as described above, when the second interlayer insulating layer 26 and each of the anodes 3 are those having a hydroxyl group exposed from the surface thereof, the hydroxyl group included in the silicone material, the second interlayer insulating layer 26 and Since the hydroxyl group provided in each anode 3 is bonded, the silicone material can be bonded to the second interlayer insulating layer 26 and each anode 3 not only by physical bonding but also by chemical bonding. As a result, the partition wall 31 is firmly bonded to the second interlayer insulating layer 26 and each anode 3.

Silicone materials are relatively flexible materials. Therefore, in the subsequent step [3], when the cathode 6 is bonded to the partition wall 31 to obtain the display device 10, it is possible to surely relieve the stress accompanying thermal expansion that occurs between the partition wall 31 and the cathode 6. it can. Thereby, in the display apparatus 10 finally obtained, it can prevent reliably that peeling arises.
Furthermore, the silicone material is excellent in chemical resistance (water resistance). For this reason, for example, when the hole transport layer 4 and the light emitting layer 5 are formed by a liquid phase process in the subsequent steps [2D] and [2E], even when an organic solvent that easily erodes the resin material is used, the partition wall 31 According to this, the erosion can be suppressed. As a result, the organic EL elements 1 can be reliably partitioned, and good display characteristics can be obtained in the obtained display device 10.

  In addition, the obtained display device 10 has high adhesion between each partition wall 31 and the second interlayer insulating layer 26 and each anode 3 and high adhesion between each partition wall 31 and the cathode 6. Therefore, the liquid tightness of the pixel space in which each hole transport layer 4 and the light emitting layer 5 are accommodated can be ensured. For this reason, it is possible to prevent moisture, oxygen, and the like in the atmosphere from entering the pixel space. As a result, it is possible to reliably prevent the display device 10 from being deteriorated by moisture or oxygen over a long period of time. In addition, since the silicone material itself has water repellency, it is possible to particularly reliably prevent moisture from entering the pixel space.

Furthermore, since the silicone material is also excellent in heat resistance, it is possible to obtain the partition wall portion 31 that is hardly changed or deformed by heat.
In addition, the liquid material supplied onto the second interlayer insulating layer 26 and each anode 3 preferably has a light shielding material dispersed in addition to the silicone material described above. Thereby, the partition part 31 formed from this liquid material has the outstanding light-shielding property. As a result, the light generated from the light emitting layer 5 in each pixel space can be prevented from interfering with each other, and display unevenness can be prevented from occurring in the display device 10.

Examples of the main material of such a light shielding material include metals such as chromium, aluminum, nickel, zinc, and titanium or alloys thereof, carbon, and resin materials containing carbon.
Moreover, as a form of a light-shielding material, it is set as powder form, needle shape, and flake shape, for example. Thereby, the light shielding material can be dispersed in the liquid material.

[2C-ii] Next, the liquid material (liquid film) supplied on the second interlayer insulating layer 26 and each anode 3 is dried.
Here, in the step [2C-i], when the liquid material is selectively supplied to the partition wall formation region 31a by the droplet discharge method, by drying the liquid material, the shape of the partition wall formation region 31a ( A partition wall 31 patterned corresponding to a predetermined shape is formed.

Further, when the liquid material is supplied to the entire surface of the second interlayer insulating layer 26 and each anode 3 in the step [2C-i], by drying the liquid material, the second interlayer insulating layer 26 and each of the respective layers are dried. A film containing a silicone material is entirely formed on the anode 3.
Then, this film is patterned using a photolithography method or the like so as to correspond to the shape of the partition wall forming region 31a. Thereby, the partition part 31 is formed.

Here, the shape of the opening of the partition wall 31 may be any shape such as, for example, a circle, an ellipse, a quadrangle, or a polygon such as a hexagon.
In addition, when making the shape of opening of the partition part 31 into a polygon, it is preferable that the corner | angular part is roundish. Thereby, when forming the hole transport layer 4 and the light emitting layer 5 using a liquid material as described later, these liquid materials are reliably supplied to every corner of the space inside the partition wall 31. can do.

The temperature at which the liquid film is dried is preferably 25 ° C. or higher, more preferably about 25 to 100 ° C.
Further, the drying time is preferably about 0.5 to 48 hours, more preferably about 15 to 30 hours.
By drying the liquid film under such conditions, in the next step [2F], it is possible to reliably form the partition wall portion 31 in which adhesiveness is suitably developed by applying energy. Moreover, when what has a silanol group which was demonstrated by the said process [2C-i] as a silicone material was used, the silanol group which a silicone material has, and also the silanol group which a silicone material has, and 2nd Since the interlayer insulating layer 26 and the hydroxyl group of each anode 3 can be securely bonded, the formed partition wall 31 is excellent in film strength and strong against the second interlayer insulating layer 26 and each anode 3. Can be combined.

Furthermore, the atmospheric pressure during drying may be under atmospheric pressure, but is preferably under reduced pressure. Specifically, the degree of decompression is preferably about 133.3 × 10 ^{−5 to} 1333 Pa (1 × 10 ^{−5 to} 10 Torr), preferably 133.3 × 10 ^{−4 to} 133.3 Pa (1 × 10 ^{-4 to 1} Torr) is more preferable. Thereby, the film density of the partition wall part 31 is densified, and the partition wall part 31 can have better film strength.

As described above, the film strength and the like of the partition wall 31 to be formed can be made desired by appropriately setting the conditions for forming the partition wall 31.
The average height (average thickness) of the partition wall 31 is appropriately set according to the total thickness of the hole transport layer 4 and the light emitting layer 5 and is not particularly limited, but is about 100 nm to 100 μm. Is preferable, and it is more preferable that the thickness is about 200 nm to 10 μm. By having such a height, the function as a partition (bank) is sufficiently exhibited.

In addition, by setting the average height of the partition wall 31 within the above range, the display device 10 in which the partition wall 31 and the cathode 6 are bonded can be bonded more firmly while preventing the dimensional accuracy from remarkably deteriorating. Can do.
That is, when the average height of the partition walls 31 is less than the lower limit value, there is a possibility that sufficient bonding strength cannot be obtained. On the other hand, when the average height of the partition walls 31 exceeds the upper limit, the dimensional accuracy of the display device 10 may be significantly reduced.

  Furthermore, by setting the average height of the partition wall portion 31 within such a range, the partition wall portion 31 becomes highly elastic to some extent. Therefore, when the partition wall portion 31 and the cathode 6 are joined in the post-process [3]. Even if particles or the like adhere to the lower surface of the cathode 6 to be brought into contact with the partition wall portion 31, the partition wall portion 31 and the cathode 6 are joined so as to enclose the particle in the partition wall portion 31. Therefore, the presence of the particles can accurately suppress or prevent the bonding strength at the interface between the partition wall 31 and the cathode 6 from being lowered or the separation from occurring at the interface.

  Further, in the present invention, since the partition wall portion 31 is formed by supplying a liquid material, the second interlayer insulating layer 26 and the partition wall formation region 31a of each anode 3 are uneven. Even in this case, although depending on the height of the unevenness, the partition wall portion 31 can be formed so as to follow the shape of the unevenness. As a result, the partition wall 31 absorbs the unevenness, and the surface thereof is constituted by a substantially flat surface.

Prior to forming the partition wall 31 by the above method in at least the partition wall forming region 31a of the second interlayer insulating layer 26 and each anode 3, the constituent material of the second interlayer insulating layer 26 and each anode 3 is formed. Accordingly, it is preferable to perform a surface treatment for improving the adhesion between the second interlayer insulating layer 26 and each anode 3 and the partition wall 31 in advance.
As a result, the second interlayer insulating layer 26 and the partition wall formation region 31a of each anode 3 are cleaned and activated, and the partition wall 31 easily acts chemically on the partition wall formation region 31a. As a result, the bonding strength between the second interlayer insulating layer 26 and each anode 3 and the partition wall 31 can be increased.

This surface treatment is not particularly limited, for example, physical treatment such as sputtering treatment, blast treatment, plasma treatment using oxygen plasma, nitrogen plasma, corona discharge treatment, etching treatment, electron beam irradiation treatment, Examples thereof include a chemical surface treatment such as ultraviolet irradiation treatment, ozone exposure treatment, or a combination thereof.
In addition, when the 2nd interlayer insulation layer 26 which surface-treats is comprised with the resin material (polymer material), especially a corona discharge process, a nitrogen plasma process, etc. are used suitably.

Further, by performing plasma treatment or ultraviolet irradiation treatment as the surface treatment, the partition wall formation region 31a can be further cleaned and activated. As a result, the bonding strength between the partition wall forming region 31a and the partition wall 31 can be particularly increased.
Further, depending on the constituent materials of the second interlayer insulating layer 26 and the respective anodes 3, there may be a case where the bonding strength with the partition wall 31 is sufficiently high without performing the above surface treatment. As a constituent material of the second interlayer insulating layer 26 that can obtain such an effect, for example, a material mainly composed of various silicon-based materials can be cited. Moreover, as a constituent material of each anode 3, the thing which has various metal type materials as a main material is mentioned, for example.

  The surface of the second interlayer insulating layer 26 and each anode 3 made of such a material is covered with an oxide film, and a hydroxyl group is bonded to the surface of the oxide film. Therefore, by using the second interlayer insulating layer 26 and each anode 3 covered with such an oxide film, the second interlayer insulating layer 26 and each anode 3 and the partition wall can be formed without performing the surface treatment as described above. The bonding strength with the part 31 can be increased.

In this case, the entire second interlayer insulating layer 26 and each anode 3 do not have to be made of the material as described above, and at least the vicinity of the surface of the partition wall formation region 31a that forms the partition wall 31 is the above-described material. What is necessary is just to be comprised with such a material.
Instead of the surface treatment, an intermediate layer may be formed in advance in at least the partition wall formation region 31a of the second interlayer insulating layer 26 and each anode 3.

This intermediate layer may have any function, and for example, a layer having a function of improving adhesion to the partition wall 31, a cushioning property (buffer function), a function of reducing stress concentration, and the like are preferable. By forming the partition wall 31 on such an intermediate layer, the display device 10 with high reliability can be finally obtained.
Examples of the constituent material of the intermediate layer include metal materials such as aluminum and titanium, metal oxides, oxide materials such as silicon oxide, metal nitrides, and nitride materials such as silicon nitride. Carbon materials such as graphite and diamond-like carbon, silane coupling agents, thiol compounds, metal alkoxides, self-assembled film materials such as metal-halogen compounds, resin adhesives, resin films, resin coating materials, Various rubber materials, resin materials such as various elastomers, and the like can be used, and one or more of these can be used in combination.
Further, among the intermediate layers made of these materials, the intermediate layer made of an oxide-based material has a bonding strength between the second interlayer insulating layer 26 and each anode 3 and the partition wall 31. In particular, it can be increased.

[2D] Next, as shown in FIG. 3 (e), a hole transport layer (semiconductor layer) 4 is formed on each anode 3.
The hole transport layer 4 can be formed by a gas phase process such as a vacuum deposition method or a liquid phase process such as a spin coating method. In the present embodiment, it is formed by a liquid phase process using an ink jet method (droplet discharge method). By using the inkjet method, the hole transport layer 4 can be made thinner and the pixel size can be reduced. In addition, since the liquid material for forming the hole transport layer can be selectively supplied to the inside of the partition wall 31, waste of the liquid material can be omitted.

Specifically, the liquid material for forming the hole transport layer is discharged from the head of the ink jet printing apparatus, supplied onto each anode 3, and after removing the solvent or dedispersing medium, about 150 ° C. if necessary. And heat treatment for a short time.
Examples of the desolvent or dedispersion medium include a method of leaving in a reduced pressure atmosphere, a method of heat treatment (for example, about 50 to 60 ° C.), a method of a flow of an inert gas such as nitrogen gas, and the like. Furthermore, the residual solvent is removed by performing additional heat treatment (about 150 ° C. for a short time).

[2E] Next, as shown in FIG. 3E, a light emitting layer (semiconductor layer) 5 is formed on each hole transport layer 4 (on the side opposite to the TFT circuit substrate 20 of the anode 3).
Although the light emitting layer 5 can also be formed by a liquid phase process, it is preferably formed by a liquid phase process using an ink jet method (droplet discharge method) as described above.
Moreover, when providing the light emitting layer 5 of multiple colors, there is also an advantage that the pattern can be easily applied for each color by using the ink jet method.

  In the step [2D] and the step [2E], when the hole transport layer 4 and the light emitting layer 5 are formed by a liquid phase process, the hole transport layer is formed in the pixel space surrounded by the partition wall 31. The liquid material for forming and the liquid material for forming the light emitting layer are dropped, but at that time, the dropping position may be deviated from the target. That is, the above-described liquid material may be dropped on the partition wall 31 instead of in the pixel space.

  However, since the partition wall 31 is made of the silicone material as described above, the partition wall 31 is provided with liquid repellency with respect to the liquid material. Thereby, even if a liquid material is dripped on the partition part 31, a liquid material will be repelled by this liquid repellency. As a result, the repelled liquid material naturally moves into the pixel space (self-alignment effect). Thereby, it can prevent that a liquid material adheres to an unintentional location.

[2F] Next, energy is applied to the surface 310 of the partition wall 31.
When energy is applied to the partition wall portion 31, the molecular bond in the vicinity of the surface 310 is broken in this partition wall portion 31, and the surface 310 is activated. Is expressed.
The partition wall 31 in such a state can be strongly bonded to the cathode 6 based on chemical bonding.

  Here, in this specification, the state where the surface 310 is “activated” means a part of the molecular bond of the surface 310 of the partition wall 31 as described above, specifically, for example, a polydimethylsiloxane skeleton. In addition to the state in which the methyl group included in is cleaved to form a bond not terminated in the partition wall 31 (hereinafter also referred to as “unbonded bond” or “dangling bond”), In this case, the partition wall 31 is referred to as an “activated” state, including a state in which is terminated by a hydroxyl group (OH group) and a state in which these states are mixed.

  The energy applied to the partition wall 31 may be applied using any method. For example, a method of irradiating the partition wall 31 with an energy beam, a method of heating the partition wall 31, and a compression to the partition wall 31. Examples thereof include a method of applying force (physical energy), a method of exposing the partition wall 31 to plasma (applying plasma energy), a method of exposing the partition wall 31 to ozone gas (applying chemical energy), and the like. Thereby, the surface of the partition part 31 can be activated efficiently. In addition, since the molecular structure in the partition wall 31 is not cut more than necessary, it is possible to avoid deterioration of the characteristics of the partition wall 31.

Among the above methods, in the present embodiment, it is particularly preferable to use a method of irradiating the partition wall 31 with energy rays as a method of applying energy to the partition wall 31. Such a method can be suitably applied as a method of applying energy because energy can be applied to the partition wall portion 31 relatively easily and efficiently.
Among these, as energy rays, for example, light such as ultraviolet rays and laser light, electromagnetic waves such as X-rays and γ rays, particle beams such as electron beams and ion beams, or two types of these energy rays are used. The combination is mentioned.

  Among these energy rays, it is particularly preferable to use ultraviolet rays having a wavelength of about 126 to 300 nm (see FIG. 3F). In the case of ultraviolet rays within such a range, the amount of energy applied is optimized, so that the molecular bond forming the skeleton in the partition wall 31 is prevented from being broken more than necessary, and the surface 310 is separated from the partition wall 31. Nearby molecular bonds can be selectively cleaved. Thereby, adhesiveness can be made to express reliably in the partition part 31, preventing the characteristic (mechanical characteristic, chemical characteristic, etc.) of the partition part 31 falling.

In addition, since ultraviolet rays can be processed over a wide range in a short time without unevenness, molecular bonds can be efficiently cut. Furthermore, ultraviolet rays also have the advantage that they can be generated with simple equipment such as UV lamps.
The wavelength of the ultraviolet light is more preferably about 126 to 200 nm.
In the case of using the UV lamp, the output may vary depending on the area of the partition wall portion 31 is preferably from ^1mW / cm ^{2 ~1W} / cm 2 or ^so, at 5mW / cm ² ~50mW / cm 2 of about More preferably. In this case, the separation distance between the UV lamp and the partition wall 31 is preferably about 3 to 3000 mm, and more preferably about 10 to 1000 mm.

The time for irradiating the ultraviolet rays is such a time that the molecular bond in the vicinity of the surface 310 of the partition wall 31 can be broken, that is, a time in which the molecular bond existing in the vicinity of the surface of the partition wall 31 can be selectively cut. Is preferable. Specifically, although it varies slightly depending on the amount of ultraviolet light, the constituent material of the partition wall 31 and the like, it is preferably about 1 second to 30 minutes, and more preferably about 1 second to 10 minutes.
Moreover, although an ultraviolet-ray may be irradiated continuously in time, you may irradiate intermittently (pulse form).

  On the other hand, examples of the laser light include a pulsed laser (pulse laser) such as an excimer laser, a continuous wave laser such as a carbon dioxide laser, and a semiconductor laser. Among these, a pulse laser is preferably used. In the pulse laser, heat hardly accumulates with time in the portion of the partition wall 31 irradiated with the laser light, so that the deterioration and deterioration of the partition wall 31 due to the accumulated heat can be reliably prevented. That is, according to the pulse laser, it is possible to prevent the heat accumulated in the partition wall 31 from being affected.

  The pulse width of the pulse laser is preferably as short as possible in consideration of the influence of heat. Specifically, the pulse width is preferably 1 ps (picosecond) or less, and more preferably 500 fs (femtosecond) or less. If the pulse width is within the above range, the influence of heat generated in the partition wall 31 due to laser light irradiation can be accurately suppressed. A pulse laser having a pulse width as small as the above range is called a “femtosecond laser”.

The wavelength of the laser light is not particularly limited, but is preferably about 200 to 1200 nm, and more preferably about 400 to 1000 nm.
In the case of a pulse laser, the peak output of the laser light varies depending on the pulse width, but is preferably about 0.1 to 10 W, and more preferably about 1 to 5 W.
Furthermore, the repetition frequency of the pulse laser is preferably about 0.1 to 100 kHz, and more preferably about 1 to 10 kHz. By setting the frequency of the pulse laser within the above range, molecular bonds near the surface 310 can be selectively cut.

  The various conditions of such laser light are such that the temperature of the portion irradiated with the laser light is preferably from room temperature (room temperature) to about 600 ° C., more preferably about 200 to 600 ° C., and even more preferably 300 to 400 ° C. It is preferable to adjust as appropriate. As a result, the temperature of the portion irradiated with the laser light can be prevented from significantly increasing, and the molecular bonds near the surface 310 can be selectively cut.

  In addition, it is preferable that the laser light applied to the partition wall 31 is scanned along the surface 310 in a state where the focal point is aligned with the surface 310 of the partition wall 31. Thereby, the heat generated by the laser light irradiation is accumulated locally in the vicinity of the surface 310. As a result, the molecular bond existing on the surface 310 of the partition wall 31 can be selectively cut.

  Further, the energy beam irradiation to the partition wall 31 may be performed in any atmosphere. Specifically, the atmosphere, an oxidizing gas atmosphere such as oxygen, a reducing gas atmosphere such as hydrogen, nitrogen, An inert gas atmosphere such as argon or a reduced pressure (vacuum) atmosphere in which these atmospheres are decompressed may be mentioned, and it is particularly preferable to perform in an air atmosphere. Thereby, it is not necessary to spend time and cost to control the atmosphere, and irradiation of energy rays can be performed more easily.

As described above, according to the method of irradiating the energy beam, it is possible to easily apply energy selectively to the partition wall portion 31. For example, the second interlayer insulating layer 26 and each anode 3 due to energy application. Can be prevented.
Moreover, according to the method of irradiating energy rays, the magnitude of energy to be applied can be easily adjusted with high accuracy. For this reason, it is possible to adjust the amount of molecular bonds cut at the partition wall 31. By adjusting the amount of molecular bonds to be cut in this way, the bonding strength between the partition wall 31 and the cathode 6 can be easily controlled.

  That is, by increasing the amount of molecular bonds to be cut in the vicinity of the surface 310, more active hands are generated in the vicinity of the surface 310 of the partition wall 31, so that the adhesiveness expressed in the partition wall 31 can be further improved. it can. On the other hand, by reducing the amount of molecular bonds cleaved in the vicinity of the surface 310, the number of active hands generated in the vicinity of the surface 310 of the partition wall portion 31 can be reduced, and the adhesiveness developed in the partition wall portion 31 can be suppressed.

In addition, in order to adjust the magnitude | size of the energy to provide, what is necessary is just to adjust conditions, such as the kind of energy beam, the output of an energy beam, the irradiation time of an energy beam.
Furthermore, according to the method of irradiating energy rays, a large amount of energy can be applied in a short time, so that the energy can be applied more efficiently.
As described above, the second stacked body 102 is obtained.

[3] Joining Step of First Laminate and Second Laminate Next, the first laminate 101 produced in the step [1] and the second laminate produced in the step [2]. The body 102 is bonded so that the partition wall 31 and the cathode 6 are in close contact with each other (see FIG. 4G). Thereby, in the said process [2F], since the adhesiveness with respect to the cathode 6 has expressed on the surface 310 of the partition part 31, the partition part 31 and the cathode 6 are couple | bonded chemically. As a result, the first stacked body 101 and the second stacked body 102 (the partition wall 31 and the cathode 6) are joined, and the display device 10 as shown in FIG. 4H is obtained.

The display device 10 thus obtained is not based on physical bonding such as an anchor effect as in an adhesive, but based on strong chemical bonding that occurs in a short time such as covalent bonding. Thus, the partition wall 31 and the cathode 6 are joined. For this reason, the display device 10 can be formed in a short time, is extremely difficult to peel off, and is less likely to cause uneven bonding.
Further, according to such a bonding method, heat treatment at a high temperature (for example, 700 ° C. or higher) is not required, and thermal damage to the hole transport layer 4, the light emitting layer 5, and the driving TFT 24 is suppressed, and the partition wall portion 31 and the cathode 6 can be firmly joined.

As described above, according to the present invention, it is possible to obtain a light emitting device that is excellent in light emission characteristics and display characteristics, hardly peels off, and has high reliability.
Here, it is preferable that the thermal expansion coefficient of the partition wall 31 and the thermal expansion coefficient of the cathode 6 are substantially equal. If these coefficients of thermal expansion are substantially equal, when the partition wall 31 and the cathode 6 are bonded, it is difficult for stress associated with thermal expansion to occur at the bonding interface. As a result, peeling can be reliably prevented in the display device 10 finally obtained.

In addition, when the thermal expansion coefficient of the partition wall 31 and the thermal expansion coefficient of the cathode 6 are different from each other, it is preferable to perform bonding at as low a temperature as possible. By performing the bonding at a low temperature, it is possible to further reduce the thermal stress generated at the bonding interface.
Specifically, although depending on the difference in thermal expansion coefficient between the partition wall 31 and the cathode 6, the first stacked body 101 and the first laminate 101 are in a state where the temperature of the partition wall 31 and the cathode 6 is about 25 to 50 ° C. The second laminated body 102 is preferably pasted together, and more preferably pasted at a temperature of about 25 to 40 ° C. In such a temperature range, even if the difference in coefficient of thermal expansion between the partition wall 31 and the cathode 6 is large to some extent, the thermal stress generated at the bonding interface can be sufficiently reduced. As a result, it is possible to reliably suppress or prevent the occurrence of warpage or peeling in the display device 10.

Further, in this case, when the specific difference in thermal expansion coefficient between the partition wall 31 and the cathode 6 is 5 × 10 ⁻⁵ / K or more, as described above, the temperature is kept as low as possible. It is particularly recommended that bonding be performed.
Moreover, it is preferable that the partition part 31 and the cathode 6 have mutually different rigidity. Thereby, the partition part 31 and the cathode 6 can be joined more firmly.

  Furthermore, it is preferable that at least one of the first stacked body 101 and the second stacked body 102 has flexibility. Thereby, when the partition part 31 and the cathode 6 are joined, the stress (for example, stress accompanying thermal expansion, etc.) generated at the joining interface can be relaxed. For this reason, it becomes difficult to destroy a joining interface, and as a result, the display apparatus 10 with high joining strength can be obtained.

  Similarly to the second interlayer insulating layer 26 and each anode 3, the lower surface of the cathode 6 (at least the region used for bonding with the partition wall portion 31) has an adhesiveness with the partition wall portion 31 in advance as necessary. An enhanced surface treatment may be applied. This cleans and activates the region used for joining with the partition wall 31 of the cathode 6. As a result, in this step, when the cathode 6 and the partition wall 31 are brought into close contact with each other and bonded together, the bonding strength between the cathode 6 and the partition wall 31 can be increased.

Although it does not specifically limit as this surface treatment, The process similar to the surface treatment with respect to the above-mentioned 2nd interlayer insulation layer 26 and each anode 3 can be used.
Further, as in the case of the second interlayer insulating layer 26 and each anode 3, depending on the constituent material of the cathode 6, the adhesion to the partition wall 31 is sufficiently high without performing the surface treatment as described above. There is something. As a constituent material of the cathode 6 that can obtain such an effect, for example, a material mainly composed of various metal-based materials as described above can be cited.

That is, the surface of the cathode 6 made of such a material is covered with an oxide film, and hydroxyl groups are bonded (exposed) to the surface of the oxide film. Therefore, by using the cathode 6 covered with such an oxide film, the bonding strength between the cathode 6 and the partition wall portion 31 can be increased without performing the surface treatment as described above.
In this case, the entire cathode 6 may not be made of the material as described above, and at least in the region used for bonding with the partition wall portion 31, the surface vicinity is made of the material as described above. It only has to be.

Further, in the case where the following group or substance is included in the region to be joined to the partition wall portion 31 of the cathode 6, the joining of the cathode 6 and the partition wall portion 31 can be performed without performing the above surface treatment. The strength can be made sufficiently high.
Examples of such groups and substances include various functional groups such as hydroxyl group, thiol group, carboxyl group, amino group, nitro group, and imidazole group, various radicals, ring-opening molecules, double bonds, and triple bonds. At least one group or substance selected from the group consisting of a leaving intermediate molecule having an unsaturated bond, a halogen such as F, Cl, Br, and I, a peroxide, or the group is desorbed. An unterminated bond (an unbonded bond, a dangling bond) is provided.

Of these, the leaving intermediate molecule is preferably a ring-opening molecule or a hydrocarbon molecule having an unsaturated bond. Such a hydrocarbon molecule acts firmly on the partition wall 31 based on the remarkable reactivity of the ring-opening molecule and the unsaturated bond. Accordingly, the cathode 6 having such hydrocarbon molecules can be particularly strongly bonded to the partition wall 31.
The functional group possessed by the region used for joining to the partition wall 31 of the cathode 6 is particularly preferably a hydroxyl group. As a result, the cathode 6 can be particularly easily and firmly bonded to the partition wall 31. In particular, when a hydroxyl group is exposed on the surface of the partition wall portion 31, the cathode 6 and the partition wall portion 31 can be firmly bonded in a short time based on the hydrogen bond generated between the hydroxyl groups.

Further, the partition wall portion 31 is appropriately selected and subjected to various surface treatments as described above for at least the region of the cathode 6 to be joined to the partition wall portion 31 so as to have such a group or substance. As a result, a cathode 6 that can be firmly bonded is obtained.
Further, instead of the surface treatment, an intermediate layer may be formed in advance in a region used for bonding with at least the partition wall 31 of the cathode 6.

  This intermediate layer may have any function. For example, as in the case of the second interlayer insulating layer 26 and each of the anodes 3, the intermediate layer has a function of improving adhesion with the partition wall 31 and cushioning properties (buffering). Function), a function having a function of relieving stress concentration, and the like are preferable. By bonding the cathode 6 and the partition wall portion 31 through such an intermediate layer, a highly reliable display device 10 can be finally obtained.

As the constituent material of the intermediate layer, for example, the same material as the constituent material of the intermediate layer formed on the second interlayer insulating layer 26 and each anode 3 can be used.
Here, a mechanism for joining the partition wall 31 and the cathode 6 in this step will be described.
For example, a case where a hydroxyl group is exposed on the surface of the cathode 6 will be described as an example. In this step, when these are bonded so that the upper surface of the partition wall 31 and the lower surface of the cathode 6 are in contact with each other, The hydroxyl group present on the surface 310 of the portion 31 and the hydroxyl group present on the surface of the cathode 6 attract each other by hydrogen bonding, and an attractive force is generated between the hydroxyl groups. It is inferred that the partition wall 31 and the cathode 6 are joined by this attractive force.

Further, the hydroxyl groups attracting each other by the hydrogen bond are cleaved from the surface with dehydration condensation depending on the temperature condition or the like. As a result, at the contact interface between the partition wall portion 31 and the cathode 6, the bonds in which the hydroxyl groups are bonded are bonded. Thereby, it is guessed that the partition part 31 and the cathode 6 are joined more firmly.
When there are unterminated bonds, i.e., dangling bonds, on the surface and inside of the partition wall 31 and on the surface and inside of the cathode 6, the partition wall 31 and the cathode 6. When these are bonded together, these unbonded hands recombine. Since this recombination occurs in a complicated manner so as to overlap (entangle) with each other, a network-like bond is formed at the bonding interface. Thereby, the partition wall 31 and the cathode 6 are particularly strongly bonded.

  Note that the active state of the surface of the partition wall portion 31 activated in the step [2F] relaxes with time. For this reason, it is preferable to perform this process [3] as soon as possible after completion of the process [2F]. Specifically, after the completion of the step [2F], the step [3] is preferably performed within 60 minutes, and more preferably within 5 minutes. Within this time, the surface of the partition wall 31 maintains a sufficiently active state, and therefore, when the partition wall 31 and the cathode 6 are bonded together, sufficient bonding strength can be obtained between them. .

  In other words, the partition wall portion 31 before activation is the partition wall portion 31 obtained by drying the silicone material, and therefore is chemically relatively stable and excellent in weather resistance. For this reason, the partition 31 before being activated is suitable for long-term storage. Accordingly, a large amount of the first laminated body 101 having such partition walls 31 is manufactured or purchased and stored, and the process [2F] is performed only for the necessary number immediately before performing the bonding in this process. If the energy application described in the above is performed, it is effective from the viewpoint of manufacturing efficiency of the display device 10.

  In the present embodiment, as shown in the step [2F] and the step [3], energy is applied to the partition wall portion 31 to develop adhesiveness in the vicinity of the surface of the partition wall portion 31, and then the partition wall. The display device 10 is obtained by bringing the part 31 and the cathode 6 into contact with each other. However, the display device 10 is not limited to this, and after the partition part 31 and the cathode 6 are brought into contact with each other, the partition part 31 is provided with energy. The device 10 may be obtained. That is, the display device 10 may be obtained by reversing the order of the step [2F] and the step [3]. Even when the steps are performed in this order to obtain the display device 10, the same effect as described above can be obtained.

As described above, the display device 10 shown in FIG. 4H can be obtained.
In the display device 10 thus obtained, the bonding strength between the partition wall 31 and the cathode 6 is preferably 5 MPa (50 kgf / cm ² ) or more, and preferably 10 MPa (100 kgf / cm ² ) or more. Is more preferable. The display device 10 having such a bonding strength can sufficiently prevent the peeling. Further, according to the manufacturing method of the present invention, the display device 10 in which the partition wall 31 and the cathode 6 are bonded with the above-described large bonding strength can be efficiently manufactured.
In addition, when obtaining the display apparatus 10 or after obtaining the display apparatus 10, at least one of the following two steps ([4A] and [4B]) is performed on the display apparatus 10 as necessary. One step (step of increasing the bonding strength of the display device) may be performed. Thereby, the further improvement of the joint strength of the display apparatus 10 can be aimed at easily.

[4A] As shown in FIG. 5, the obtained display device 10 is pressurized in a direction in which the partition wall 31 and the cathode 6 approach each other.
Thereby, the surface of the cathode 6 is closer to the surface of the partition wall 31, and the bonding strength in the display device 10 can be further increased.
Further, by pressurizing the display device 10, the gap remaining at the bonding interface in the display device 10 can be crushed and the bonding area can be further expanded. Thereby, the joint strength in the display device 10 can be further increased.

In addition, what is necessary is just to adjust this pressure suitably according to conditions, such as each component material of each of the partition part 31 and the cathode 6, thickness, and a joining apparatus. Specifically, although it varies slightly depending on the constituent materials and thicknesses of the partition wall 31 and the cathode 6, it is preferably about 0.2 to 10 MPa, more preferably about 1 to 5 MPa. Thereby, the joint strength of the display device 10 can be reliably increased. Note that this pressure may exceed the upper limit, but depending on the constituent materials of the respective parts constituting the first laminate 101 and the second laminate 102, the laminates 101 and 102 may be damaged. There is a fear.
The time for pressurization is not particularly limited, but is preferably about 10 seconds to 30 minutes. In addition, what is necessary is just to change suitably the time to pressurize according to the pressure at the time of pressurizing. Specifically, the bonding strength can be improved as the pressure applied to the display device 10 is higher, even if the pressing time is shortened.

[4B] As shown in FIG. 5, the obtained display device 10 is heated.
Thereby, the joint strength in the display device 10 can be further increased.
At this time, the temperature at which the display device 10 is heated is not particularly limited as long as it is higher than room temperature and lower than the heat-resistant temperature of the display device 10, but is preferably about 25 to 100 ° C., more preferably 50 to 100. About ℃. By heating at a temperature in such a range, it is possible to reliably increase the bonding strength while reliably preventing the display device 10 from being altered or deteriorated by heat.

The heating time is not particularly limited, but is preferably about 1 to 30 minutes.
Moreover, when performing both said process [4A] and [4B], it is preferable to perform these simultaneously. That is, as shown in FIG. 5, it is preferable to heat the display device 10 while applying pressure. Thereby, the effect by pressurization and the effect by heating are exhibited synergistically, and the joint strength of the display device 10 can be particularly increased.

By performing the steps as described above, it is possible to easily further improve the bonding strength in the display device 10.
In the above description, the case where energy is applied to the partition wall 31 before the first stacked body 101 and the second stacked body 102 are bonded together is described. It may be performed after superposing the first laminated body 101 and the second laminated body 102. That is, first, the first stacked body 101 and the second stacked body 102 are overlapped to form a temporary bonded body. And by giving energy with respect to the partition part 31 in this temporary joining body, adhesiveness expresses in the partition part 31, and the 1st laminated body 101 and the 2nd laminated body 102 are interposed through the partition part 31. FIG. Are joined (adhered).

In this case, for the energy application to the partition wall portion 31 in the temporary joined body, the various energy application methods described above can be used.
In the state of the temporary bonded body, since the first stacked body 101 and the second stacked body 102 are not bonded, their relative positions can be easily adjusted (shifted). Therefore, once the temporary bonded body is obtained, the relative accuracy between the first stacked body 101 and the second stacked body 102 is finely adjusted, thereby assembling accuracy (dimensional accuracy) of the display device 10 finally obtained. ) Can be reliably increased.

<< Second Embodiment >>
Next, an active matrix display device (light emitting device according to the second embodiment) will be described as another example of the light emitting device manufactured by the method for manufacturing a light emitting device of the present invention.
FIG. 6 is a longitudinal sectional view showing a second embodiment of an active matrix display device to which the light emitting device of the present invention is applied, and FIG. 7 is a view for explaining a method of manufacturing the active matrix display device shown in FIG. It is. In the following description, the upper side in FIGS. 6 and 7 is referred to as “upper” and the lower side is referred to as “lower”.

Hereinafter, although the second embodiment will be described, the description will focus on the differences from the first embodiment, and the description of the same matters will be omitted.
The display device 10 ′ of this embodiment is the same as that of the first embodiment except that the configuration of the partition wall 31 is different.
That is, in the present embodiment, as shown in FIG. 6, the partition wall portion 31 includes a first partition wall portion 311 disposed on the second interlayer insulating layer 26 side and a second partition wall stacked on the first partition wall portion 311. A second partition wall portion 312 and the cathode 6 are joined.

The first partition wall 311 is directly provided in the second interlayer insulating layer 26 and the partition wall formation region 31 a of each anode 3.
The constituent material of the first partition 311 is selected in consideration of heat resistance, liquid repellency, solvent resistance, adhesion between the second interlayer insulating layer 26 and the anode 3, and the like.
Specifically, examples of the constituent material of the first partition wall 311 include organic materials such as acrylic resins, polyimide resins, and fluorometer resins, and inorganic materials such as SiO _2. In particular, when the anode 3 is composed mainly of an oxide material, it is preferable to use SiO ₂ . Thereby, the adhesiveness of the anode 3 and the 1st partition part 311 can be improved.

The second partition wall 312 is provided on the first partition wall 311 with a size higher than that of the first partition wall 311.
Similar to the partition wall 31 in the first embodiment, the second partition wall 312 is made of a coating containing a silicone material, and has an adhesive property that is manifested by applying energy to at least a part of the cathode 6. And are bonded (joined). That is, the second partition wall portion 312 has a function as a partition wall (bank) for partitioning each organic EL element 1 and also has a function as a bonding film for bonding the first partition wall portion 311 and the cathode 6.

As described above, in the bonding based on the adhesiveness developed in the second partition wall portion 312, the second partition wall portion 312 and the cathode 6 are firmly bonded with high dimensional accuracy even when the bonding temperature condition is set to be relatively low. Therefore, thermal damage to the organic material layer such as the hole transport layer 4 and the light emitting layer 5 and the driving circuit is suppressed, the optical characteristics and the display characteristics are excellent, and the cathode 6 is difficult to peel off, and the display device 10 has high reliability. 'You can get.
Such a display device 10 ′ is manufactured in the same manner as in the first embodiment except that the following step “2C ′” is performed instead of the step [2C].

  [2C ′] On the second interlayer insulating layer 26, partition walls (banks) 31 constituted by the first partition walls 311 and the second partition walls 312 are formed so as to partition the anodes 3. That is, the first barrier rib is formed in a region where the surface of the second interlayer insulating layer 26 exposed between the anodes 3 and the edge portion of each anode 3 are combined (hereinafter referred to as a “partition portion forming region 31a”). A partition wall 31 constituted by the portion 311 and the second partition wall 312 is formed. Hereinafter, the formation process of the partition part 31 is explained in full detail.

[2C′-i] First, a first film for obtaining the first partition wall portion 311 is formed so as to cover the entire upper surface of the second interlayer insulating layer 26 and each anode 3. Then, by patterning the first film using a photolithography method or the like so as to correspond to the shape of the partition wall formation region 31a, the first partition wall 311 shown in FIG. 7A is formed.
In the subsequent step [2C′-ii], when the second film for forming the second partition wall 312 is formed on the entire surface of the second interlayer insulating layer 26 and each anode 3, the first film is formed. The patterning of the film may not be performed in this step, and may be performed continuously using the same resist mask when patterning the second film.
Examples of the method for forming the first film include a liquid phase process such as a sol-gel method, a physical vapor deposition method such as a sputtering method, a chemical vapor deposition method such as a CVD method, and the like.

[2C′-ii] Next, as shown in FIG. 7B, the second partition wall 312 is formed on the first partition wall 311 to obtain the partition wall 31.
The second partition wall 312 is the process [2C-i], [2C] in the first embodiment except that the upper surface of the first partition wall 311 is the partition wall forming region 31a and a liquid material containing a silicone material is supplied. -Ii].

In this case, a surface treatment for improving the adhesion with the second partition wall portion 312 is applied to the upper surface of the first partition wall portion 311 and at least the region of the cathode 6 that is joined to the partition wall portion 31, or an intermediate It is preferred to provide a layer. The conditions for the surface treatment and the configuration of the intermediate layer can be the same as those described in the first embodiment.
Also in the second embodiment, the same operation and effect as the first embodiment can be obtained.

  In the second embodiment, in particular, the first partition wall portion 311 is provided below the partition wall portion (second partition wall portion 312) formed of a coating containing a silicone material. The constituent materials are not limited. For this reason, for example, by selecting a material having high adhesion to the second interlayer insulating layer 26 and each anode 3 and the second partition 312 as a constituent material of the first partition 311, A partition wall portion 31 having excellent adhesion can be obtained by being adhered to the two-layer insulating layer 26 and each anode 3 with good adhesion. As a result, the reliability of the display device 10 'can be further improved.

In the second embodiment, when the first partition wall portion 311 is made of an oxide material such as SiO ₂ , the “self-alignment effect” described above is more remarkably exhibited. This is because the liquid material for forming the hole transport layer and the liquid material for forming the light-emitting layer have high affinity for the oxide material, so that the liquid material attached to the side surface of the second partition wall 312 is the first material. This is because it is easily pulled toward the first partition wall 311 side (anode 3 side) by being pulled by the oxide material constituting the partition wall 311.

<< Third Embodiment >>
Next, an active matrix display device (light emitting device according to the third embodiment) will be described as another example of the light emitting device manufactured by the method for manufacturing a light emitting device of the present invention.
FIG. 8 is a longitudinal sectional view showing a third embodiment of an active matrix display device to which the light emitting device of the present invention is applied. In the following description, the upper side in FIG. 8 is referred to as “upper” and the lower side is referred to as “lower”.

In the following, the third embodiment will be described. The description will focus on the differences from the first embodiment, and the description of the same matters will be omitted.
The display device 10 ″ of this embodiment is the same as that of the first embodiment except that the configuration of the partition wall 31 is different.
That is, in the present embodiment, as shown in FIG. 8, the partition wall portion 31 includes a lower partition wall portion 313 disposed on the second interlayer insulating layer 26 side and an upper partition wall portion 314 provided on the lower partition wall portion. It is configured.

Each of the lower partition wall portion 313 and the upper partition wall portion 314 is made of a film containing a silicone material similar to that of the partition wall portion 31 in the first embodiment, and is expressed by applying energy to at least a part of the region. Due to the adhesive properties, they are bonded (joined) to each other.
As described above, in this embodiment, the partition wall portion 31 is formed by bonding the lower partition wall portion 313 and the upper partition wall portion 314 made of the same kind of material, and the first stacked body 101 and the second stacked body are formed. The display device 10 ″ is formed by bonding the body 102. Accordingly, the airtightness (liquid tightness) of the pixel space is increased, and the reliability of the display device 10 ″ can be further improved. .

In such a display device 10 ″, the lower partition wall 313 is formed on the second stacked body 102 side, while the upper partition wall 314 is formed on the first stacked body 101 side, and then the upper surface of the lower partition section 313 is formed. And energy are respectively applied to the lower surfaces of the upper partition wall portion 314. Then, the first stacked body 101 and the second stacked body are bonded so that the lower partition wall portion 313 and the upper partition wall portion 314 are in close contact with each other. The display device 10 ″ is obtained by pasting 102 together.
In the third embodiment as described above, the same operations and effects as in the first embodiment can be obtained.

<Electronic equipment>
Such display devices (light-emitting devices of the present invention) 10, 10 ′, 10 ″ can be incorporated into various electronic devices.
FIG. 9 is a perspective view showing a configuration of a mobile (or notebook) personal computer to which the electronic apparatus of the present invention is applied.

In this figure, a personal computer 1100 includes a main body 1104 provided with a keyboard 1102 and a display unit 1106 provided with a display. The display unit 1106 is rotatable with respect to the main body 1104 via a hinge structure. It is supported by.
In the personal computer 1100, the display unit included in the display unit 1106 includes the display devices 10, 10 ′, and 10 ″ described above.

FIG. 10 is a perspective view showing a configuration of a mobile phone (including PHS) to which the electronic apparatus of the invention is applied.
In this figure, a cellular phone 1200 includes a plurality of operation buttons 1202, an earpiece 1204 and a mouthpiece 1206, and a display unit.
In the mobile phone 1200, the display unit is composed of the display devices 10, 10 ′, 10 ″ described above.

FIG. 11 is a perspective view showing the configuration of a digital still camera to which the electronic apparatus of the present invention is applied. In this figure, connection with an external device is also simply shown.
Here, an ordinary camera sensitizes a silver halide photographic film with a light image of a subject, whereas a digital still camera 1300 photoelectrically converts a light image of a subject with an imaging device such as a CCD (Charge Coupled Device). An imaging signal (image signal) is generated.

A display unit is provided on the back of a case (body) 1302 in the digital still camera 1300, and is configured to display based on an imaging signal from the CCD, and functions as a finder that displays an object as an electronic image.
In the digital still camera 1300, the display unit is composed of the display devices 10, 10 ′, and 10 ″ described above.

A circuit board 1308 is installed inside the case. The circuit board 1308 is provided with a memory that can store (store) an imaging signal.
A light receiving unit 1304 including an optical lens (imaging optical system), a CCD, and the like is provided on the front side of the case 1302 (on the back side in the illustrated configuration).
When the photographer confirms the subject image displayed on the display unit and presses the shutter button 1306, the CCD image pickup signal at that time is transferred and stored in the memory of the circuit board 1308.

  In the digital still camera 1300, a video signal output terminal 1312 and an input / output terminal 1314 for data communication are provided on the side surface of the case 1302. As shown in the figure, a television monitor 1430 is connected to the video signal output terminal 1312 and a personal computer 1440 is connected to the input / output terminal 1314 for data communication as necessary. Further, the imaging signal stored in the memory of the circuit board 1308 is output to the television monitor 1430 or the personal computer 1440 by a predetermined operation.

The electronic apparatus of the present invention includes, for example, a television, a video camera, a viewfinder type, in addition to the personal computer (mobile personal computer) in FIG. 9, the mobile phone in FIG. 10, and the digital still camera in FIG. Monitor direct-view video tape recorder, laptop personal computer, car navigation system, pager, electronic notebook (including communication function), electronic dictionary, calculator, electronic game device, word processor, workstation, videophone, security TV Monitors, electronic binoculars, POS terminals, devices equipped with touch panels (for example, cash dispensers and automatic ticket vending machines for financial institutions), medical devices (for example, electronic thermometers, blood pressure monitors, blood glucose meters, electrocardiographs, ultrasound diagnostic devices, internal Endoscopic display device), fish finder, various measuring machines , Instruments (e.g., gages for vehicles, aircraft, and ships), a flight simulator, various monitors, and a projection display such as a projector. Note that the electronic apparatus of the present invention is not limited to one having a display function as long as it has a light emitting function such as a light source.
As mentioned above, although the manufacturing method of the light-emitting device of this invention, the light-emitting device, and the electronic device were demonstrated based on embodiment of illustration, this invention is not limited to these.
For example, in the method for manufacturing a light emitting device of the present invention, one or two or more processes for an arbitrary purpose may be added. Two or more of the above embodiments may be combined.

Next, specific examples of the present invention will be described.
1. Production of organic EL element (light emitting device) (Example 1)
<1> First, a transparent glass substrate having an average thickness of 1 mm was prepared, and a circuit portion was formed on the glass substrate.

<2> Next, an ITO film having an average thickness of 150 nm was formed on the circuit portion by sputtering, and then patterned to obtain an anode.
<3> Next, an SiO ₂ film having an average thickness of 150 nm was formed by sputtering so as to cover the edge of each anode, and then patterned to form a first partition wall.
<4> Next, a liquid material containing a polydimethylsiloxane skeleton as a silicone material and containing toluene and isobutanol as a solvent (manufactured by Shin-Etsu Chemical Co., Ltd., “KR-251”: viscosity (25 ° C.) 18 0.0 mPa · s) was prepared, and this liquid material was supplied as 5 pL droplets on the first partition wall by an inkjet method to form a liquid film.

<5> Next, this liquid coating film was dried at room temperature (25 ° C.) for 24 hours to form a second partition wall portion on the first partition wall portion. As a result, a partition wall portion having an average height of 2 μm constituted by a laminate of the first partition wall portion and the second partition wall portion was obtained.
<6> Next, a mixed solution of polydioctylfluorene and F8BT (a copolymer of dioctylfluorene and benzothiazole) was supplied into the pixel space defined by the partition wall to form a light emitting layer.
<7> Next, a glass substrate having an average thickness of 0.5 mm was prepared. Then, a Ca film having an average thickness of 20 nm and an Al film having an average thickness of 200 nm were formed on the glass substrate by a vacuum vapor deposition method to form a cathode.

<8> Next, the obtained 2nd partition part was irradiated with the ultraviolet-ray on the conditions shown below.
<Ultraviolet irradiation conditions>
-Atmospheric gas composition: Air (air)
・ Atmospheric gas temperature: 20 ℃
・ Atmospheric gas pressure: Atmospheric pressure (100 kPa)
UV wavelength: 172 nm
-Irradiation time of ultraviolet rays: 5 minutes <9> The glass substrate on the anode side and the glass substrate on the cathode side were bonded so that the second partition wall portion irradiated with the ultraviolet rays and the cathode were in close contact with each other. This obtained the organic EL element.
<10> Next, the obtained organic EL element was heated at 80 ° C. while being compressed at 3 MPa, and maintained for 15 minutes. Thereby, the joint strength of the organic EL element was improved.

(Example 2)
An organic EL element was obtained in the same manner as in Example 1 except that the first partition wall was omitted.
(Comparative example)
An organic EL device was obtained in the same manner as in Example 1 except that the partition wall was composed of a fluorine-containing polyimide film formed by vapor deposition polymerization.
The partition wall was formed by changing the steps <4> to <5> as follows.
First, 2, 2′-bis (trifluoromethyl) -4,4′-diaminobiphenyl (TFDB) and 2,2′-bis (3,4-di) are used as a deposition source (raw material) in a vacuum deposition apparatus. Carboxyphenyl) hexafluoropropane dianhydride (6FDA) was prepared.
Next, the glass substrate on which the first partition wall portion was formed was housed in a vacuum vapor deposition apparatus, and vapor deposition was performed.
Next, the vapor deposition film was heated at 300 ° C. for 30 minutes to polymerize the raw material to obtain a fluorine-containing polyimide film.

2. Evaluation For each of the organic EL elements of Examples and Comparative Examples, the time (half-life) during which the emission luminance (cd / m ² ) was half of the initial value was measured.
The measurement of light emission luminance was performed by applying a voltage of 6 V between the anode and the cathode from a DC power source.
And the half life measured with the organic EL element of the comparative example was compared with the half life measured with the organic EL element of each Example.

  As a result, it has been clarified that the half lives of the organic EL elements of the respective examples are 1.2 times or more longer than the half lives of the organic EL elements of the comparative examples. As a result, the organic EL element of each example has high liquid-tightness in the pixel space due to high adhesion between the partition wall and the circuit and high adhesion between the partition and the cathode. This is considered to be due to the suppression of the deterioration of the layer.

1 is a longitudinal sectional view illustrating a first embodiment of an active matrix display device to which a light emitting device of the present invention is applied. It is a figure for demonstrating the manufacturing method of the active matrix type display apparatus shown in FIG. It is a figure for demonstrating the manufacturing method of the active matrix type display apparatus shown in FIG. It is a figure for demonstrating the manufacturing method of the active matrix type display apparatus shown in FIG. It is a figure for demonstrating the manufacturing method of the active matrix type display apparatus shown in FIG. It is a longitudinal cross-sectional view which shows 2nd Embodiment of the active matrix type display apparatus to which the light-emitting device of this invention is applied. FIG. 7 is a diagram for explaining a manufacturing method of the active matrix display device shown in FIG. 6. It is a longitudinal cross-sectional view which shows 3rd Embodiment of the active-matrix display device to which the light-emitting device of this invention is applied. 1 is a perspective view showing a configuration of a mobile (or notebook) personal computer to which an electronic apparatus of the present invention is applied. It is a perspective view which shows the structure of the mobile telephone (PHS is also included) to which the electronic device of this invention is applied. It is a perspective view which shows the structure of the digital still camera to which the electronic device of this invention is applied.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Organic EL element 3 ... Anode 4 ... Hole transport layer 5 ... Light emitting layer 6 ... Cathode 9 ... Upper substrate 10, 10 ', 10 "... Display apparatus 20 ... TFT circuit board 21 ... ... Substrate 22 ... Circuit part 23 ... Base protective layer 24 ... Driving TFT 241 ... Semiconductor layer 242 ... Gate insulating layer 243 ... Gate electrode 244 ... Source electrode 245 ... Drain electrode 25 ... First Interlayer insulating layer 26 …… Second interlayer insulating layer 27 …… Wiring 31 …… Partition wall 31a …… Partition wall forming region 310 …… Surface 311 …… First partition wall 312 …… Second partition wall 313 …… Lower partition wall Part 314... Upper partition part 101... First laminated body 102... Second laminated body 1100... Personal computer 1102 ... Keyboard 1104. 1200 …… Cellular phone 1202 …… Operation buttons 1204 …… Earpiece 1206 …… Transmission mouth 1300 …… Digital still camera 1302 …… Case (body) 1304 …… Light receiving unit 1306 …… Shutter button 1308 …… Circuit Substrate 1312 …… Video signal output terminal 1314 …… Input / output terminal for data communication 1430 …… TV monitor 1440 …… Personal computer

Claims (20)

A first step of forming a partition wall part by supplying a liquid material containing a silicone material on the substrate so as to partition the plurality of first electrodes provided on the substrate, and then drying;
A second step of forming a light emitting layer in a plurality of pixel spaces defined by the partition;
By applying energy to the partition wall, an adhesive property is developed in the vicinity of the surface of the partition wall, and by this adhesion, the partition wall portion and the second electrode are joined to obtain a light emitting device. A method for manufacturing a light-emitting device.   The light emitting device manufacturing method according to claim 1, wherein the silicone material has a main skeleton made of polydimethylsiloxane.   The method of manufacturing a light emitting device according to claim 1, wherein the silicone material has a silanol group.   The method for manufacturing a light emitting device according to claim 1, wherein the liquid material is a material in which a light shielding material is dispersed.   In the third step, the partition wall and the second electrode are joined by bringing the partition wall and the second electrode into contact with each other, and then applying the energy to the partition wall. 5. A method for manufacturing a light emitting device according to any one of 1 to 4.   6. The method for manufacturing a light emitting device according to claim 1, wherein in the first step, the liquid material is supplied onto the substrate by a droplet discharge method.   The application of the energy in the third step is performed by at least one of a method of irradiating the partition wall with energy rays, a method of heating the partition wall, and a method of applying a compressive force to the partition wall. The method for manufacturing a light-emitting device according to claim 1, wherein the method is performed.   The method of manufacturing a light emitting device according to claim 7, wherein the energy beam is an ultraviolet ray having a wavelength of 126 to 300 nm.   The method for manufacturing a light-emitting device according to claim 7, wherein the heating temperature is 25 to 100 ° C.   The method for manufacturing a light emitting device according to claim 7, wherein the compressive force is 0.2 to 10 MPa.   The method for manufacturing a light emitting device according to claim 1, wherein the application of energy in the third step is performed in an air atmosphere.   The method for manufacturing a light-emitting device according to claim 1, wherein a height of the partition wall is 100 nm to 100 μm.   The method for manufacturing a light-emitting device according to claim 1, wherein at least a portion of the substrate that is in contact with the partition wall is configured using a silicon material as a main material.   The method for manufacturing a light-emitting device according to claim 1, wherein at least a portion of the second electrode that is in contact with the partition wall is configured using a metal material as a main material.   The light emitting device according to any one of claims 1 to 14, wherein the substrate and the second electrode are subjected to surface treatment for improving adhesion to the partition wall in advance on a surface in contact with the partition wall. Manufacturing method.   The method for manufacturing a light emitting device according to claim 15, wherein the surface treatment is a plasma treatment or an ultraviolet irradiation treatment.   The light emission according to any one of claims 1 to 16, further comprising a step of performing a process of increasing a bonding strength between the partition wall and the second electrode on the light emitting device after the third step. Device manufacturing method.   The step of increasing the bonding strength is performed by at least one of a method of irradiating the partition wall with energy rays, a method of heating the partition wall, and a method of applying a compressive force to the partition wall. A method for manufacturing a light emitting device according to claim 17.   A light-emitting device manufactured by the method for manufacturing a light-emitting device according to claim 1.   An electronic apparatus comprising the light emitting device according to claim 19.

Images