JP2009211084A - Electro-optical device and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electro-optical device capable of preventing variation in an aperture ratio of a pixel for each liquid crystal device, while securely shielding transistors of one substrate, by reducing the variation of the aperture ratio of each pixel in a display area by a shield film in the other substrate, even when a position of one substrate is shifted from the other substrate, after sticking together. <P>SOLUTION: In a liquid crystal device including a pair of substrates facing each other, scanning lines 11a and data lines 6a are formed so as to cross each other in matrix on a thin film transistor (TFT) substrate, and semiconductor layers 1 of TFT 30 are provided at positions corresponding to crossover regions 80 of scanning lines 11a and data lines 6a. On a facing substrate, an island-like BM 25 for shielding the TFT 30 is provided in a state at least partially overlapping with the semiconductor layer 1 in plan view. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

The present invention relates to an electro-optical device and an electronic apparatus that have a pair of substrates arranged opposite to each other and have a light-shielding film that shields a transistor on one substrate on the other substrate.

As is well known, an electro-optical device, for example, a light transmission type liquid crystal device, includes a glass substrate, a quartz substrate,
A liquid crystal is interposed between two substrates made of a silicon substrate or the like, and switching elements such as thin film transistors and pixel electrodes are arranged in a matrix on one substrate,
By disposing the counter electrode on the other substrate and changing the optical characteristics of the liquid crystal layer interposed between the two substrates according to the image signal, it is possible to display an image.

In addition, an element substrate that is one substrate on which a transistor is disposed and an opposing substrate that is the other substrate disposed to face the element substrate are manufactured separately. The element substrate and the counter substrate are configured, for example, by laminating a semiconductor thin film, an insulating thin film, or a conductive thin film having a predetermined pattern on a quartz substrate. Each layer is formed by repeating a film forming process of various films and a photolithography process.

Meanwhile, in the element substrate, a plurality of transistors provided for each pixel electrode includes a data line for supplying an image signal to the pixel electrode and a scanning line for supplying an ON signal to the transistor, which are formed in a matrix in the display region of the liquid crystal device. It is comprised in the intersection area with each.

Here, if light is incident on a known semiconductor layer in a transistor, in particular, a channel region of the semiconductor layer and a region electrically connected to a pixel electrode in the semiconductor layer, the transistor malfunctions and an off-leakage occurs in the liquid crystal device. In addition to display unevenness, crosstalk, and flicker due to current, there are problems such as display defects such as a decrease in contrast in display.

In view of such a problem, among various thin films stacked on the element substrate, a light shielding film that covers the lower side of the semiconductor layer in a plan view is provided below the semiconductor layer, and the semiconductor layer is provided above the semiconductor layer. A configuration of a liquid crystal device that can prevent light from entering the semiconductor layer by providing a light-shielding film that covers the upper side of the substrate in a plan view is well known.

For example, the scanning line functions as a light-shielding film that covers the lower side of the semiconductor layer in plan view, and the data line and the capacitor line that holds the voltage of the pixel electrode are viewed in plan view on the upper side of the semiconductor layer. A structure that functions as a light-shielding film that covers the state is well known.

Also in the counter substrate, a configuration in which a light shielding film is formed in a stripe shape or a matrix shape around each pixel in the display region is well known, and is disclosed in, for example, Patent Document 1. The matrix-shaped light shielding film formed on the counter substrate disclosed in Patent Document 1 is viewed in plan view on the scanning lines and data lines formed in a matrix on the element substrate when the counter substrate is bonded to the element substrate. By overlapping with each other in the state, it functions to prevent light from entering the transistor together with the light shielding film on the element substrate side.

JP 2003-121879 A

By the way, the counter substrate after the thin film is laminated is adsorbed by a suction head of a robot or the like, and is bonded to the element substrate after the thin film is laminated with a positional accuracy with a sealant.

Specifically, the light shielding film formed in a matrix on the counter substrate side is planar with respect to the scanning lines and data lines formed in a matrix on the element substrate side so that the transistor is also shielded by the light shielding film on the counter substrate. They are pasted together with high positional accuracy so that they overlap when viewed.

However, it is difficult to bond the counter substrate to the element substrate with complete positional accuracy. Moreover, even if the counter substrate is bonded to the element substrate with high positional accuracy,
If the element substrate or the counter substrate is warped, the counter substrate may be displaced with respect to the element substrate.

Furthermore, in recent years, for the purpose of improving the aperture ratio of the pixel, the width of the light shielding film formed on the element substrate and the counter substrate is reduced to, for example, about 2.5 to 3 microns from the conventional 2.5 to 3 microns. Has been done.

Therefore, when the counter substrate is bonded to the element substrate while being displaced, that is,
For example, when a positional error due to bonding of about ± 0.5 to 0.7 microns occurs due to the bonding, the matrix-shaped light shielding film of the counter substrate protrudes into the light transmission region in the display region. There is a problem that the aperture ratio of the pixels varies for each liquid crystal device. In addition, although the aperture ratio is secured in a certain pixel, there is a problem that the aperture ratio of the pixel varies between pixels, for example, the aperture ratio greatly decreases in a certain pixel.

The present invention has been made by paying attention to the above circumstances, and even when a positional deviation of the other substrate occurs with respect to one substrate during bonding, each pixel in the display region is caused by the light shielding film on the other substrate. Electro-optics having a configuration that can reduce variations in the aperture ratio of each liquid crystal device, prevent variations in the aperture ratio of the pixels for each liquid crystal device, and suppress display defects by reliably shielding the transistor on one substrate An object is to provide an apparatus and an electronic device.

In order to achieve the above object, an electro-optical device according to the present invention is an electro-optical device having a pair of substrates arranged opposite to each other, and a scanning line and a data line are arranged in a matrix on one of the pair of substrates. And a semiconductor layer of a transistor is provided in an intersecting region between the scanning line and the data line, and the other substrate of the pair of substrates is provided with
An island-shaped light-shielding film is provided, which shields the transistor from light and overlaps the semiconductor layer in a state in which at least a part thereof is viewed in a plan view.

According to the electro-optical device of the present invention, after bonding, the other substrate is provided with an island-shaped light shielding film that overlaps with the semiconductor layer of one substrate in a state in plan view.
Even if the other substrate is bonded to one substrate with poor positional accuracy, that is, even if a positional shift occurs, the island-shaped light shielding film with a small protrusion region to the light transmission region of each pixel,
The variation of the aperture ratio of each pixel in the display area of the electro-optical device is reduced, and for each liquid crystal device,
To provide an electro-optical device having a structure that can prevent display defects by preventing light from entering a transistor on one substrate while preventing variation in aperture ratio of pixels. it can.

The semiconductor layer is provided in the intersection region along the direction in which the data line extends, and the light shielding film is formed in an island shape along the direction in which the data line extends. It is characterized by being.

According to the present invention, even if the other substrate is bonded to one substrate with poor positional accuracy, that is, even if a positional deviation occurs, the island that has a small protrusion region to the light transmission region of each pixel. In the display region of the electro-optic device, variation in the aperture ratio of each pixel is reduced by the shape of the light shielding film, so that the pixel aperture ratio varies from one liquid crystal device to another, and light is applied to the semiconductor layer of the transistor on one substrate. Therefore, it is possible to provide an electro-optical device having a configuration capable of suppressing display defects by reliably shielding light from entering.

Further, the semiconductor layer includes a channel region, and the channel layer is electrically connected to the scanning line via a gate insulating film that covers the semiconductor layer in a plan view. A gate electrode is provided along a direction in which the scanning line extends in the intersection region, and the light shielding film protrudes in the direction in which the scanning line extends in the intersection region, at least the gate electrode And a convex portion that overlaps in a plan view.

According to the present invention, the island-shaped light-shielding film has a convex portion protruding in the scanning line direction that overlaps at least the gate electrode of the transistor in a plan view, so that the other substrate with respect to one substrate. Even if they are attached with poor positional accuracy, that is, even if a positional shift occurs, the projection area of each pixel to the light transmission region is small, and the aperture ratio of each pixel in the display region of the electro-optical device Variation of the pixel area, preventing variation in the aperture ratio of the pixels for each liquid crystal device, and reliably blocking light from entering the gate electrode extending in the scanning line direction in the intersection region. An electro-optical device having a configuration capable of suppressing display defects can be provided.

Further, the width of the convex portion is formed to have a line width different from the line width of the scanning line.

According to the present invention, when the width of the convex portion is formed wider than the line width of the scanning line, even if the other substrate is bonded to one substrate with poor positional accuracy, that is, the position shift Even if this occurs, since the convex portion remains overlapped with the gate electrode, it is possible to more reliably shield light from entering the gate electrode extending in the scanning line direction in the intersection region.
Further, when the width of the convex portion is narrower than the line width of the scanning line, even if the other substrate is bonded to one substrate with poor positional accuracy, it protrudes into the light transmission region. Difficult convex portions can more reliably reduce variations in the aperture ratio of each pixel in the display area of the electro-optical device, and prevent the aperture ratio of the pixel from varying between liquid crystal devices. As described above, display defects of the electro-optical device can be suppressed.

Furthermore, the scanning line functions as a light-shielding film on the one substrate side that is different from the light-shielding film and shields the transistor.

According to the present invention, when the width of the convex portion is formed wider than the line width of the light shielding film on one substrate side, even if the other substrate is bonded to one substrate with poor positional accuracy. That is,
Even if misalignment occurs, the convex portion remains overlapped with the gate electrode, so that light can be more reliably shielded from entering the gate electrode extending in the scanning line direction at the intersection region. it can. Further, when the width of the convex portion is formed narrower than the line width of one substrate side light shielding film, even if the other substrate is bonded to one substrate with poor positional accuracy, the light transmission region The convex portion that does not protrude easily can more reliably reduce the variation in the aperture ratio of each pixel in the display area of the electro-optical device, and can prevent the pixel aperture ratio from being varied for each liquid crystal device.
As described above, display defects of the electro-optical device can be suppressed.

  The light-shielding film is formed in a rectangular shape.

According to the present invention, since the light shielding film is formed in a rectangular shape, even if the other substrate is bonded to one substrate with poor positional accuracy, that is, even if a positional deviation occurs, the rectangular shape The light shielding film reduces variation in the aperture ratio of each pixel in the display area of the electro-optical device, prevents variation in the aperture ratio of the pixel for each liquid crystal device, and prevents light from entering the semiconductor layer. It is possible to provide an electro-optical device having a configuration capable of suppressing display defects by reliably shielding light.

Further, the capacitor line and the data line, which are provided on the one substrate and have one electrode electrically connected to a fixed potential along the data line, shield the transistor, and the light shielding film. It functions as a light-shielding film on the different one substrate side.

Further, the width of the light shielding film is formed to have a line width different from that of the data line and the capacitor line.

According to the present invention, when the width of the light shielding film is wider than the line width of the light shielding film on one substrate side, even if the other substrate is bonded to one substrate with poor positional accuracy. That is, even if a positional shift occurs, the light shielding film remains overlapped with the semiconductor layer and the gate electrode, so that light can be more reliably shielded from entering the semiconductor layer and the gate electrode. In addition, when the width of the light shielding film is narrower than the line width of the light shielding film on one substrate side, even if the other substrate is bonded to one substrate with poor positional accuracy, light transmission is possible. The light-shielding film that does not easily protrude into the region can more reliably reduce the variation in the aperture ratio of each pixel in the display region of the electro-optical device, and can prevent the pixel aperture ratio from being varied for each liquid crystal device. As described above, display defects of the electro-optical device can be suppressed.

According to another aspect of the present invention, there is provided an electronic apparatus including an electro-optical device having a pair of substrates opposed to each other, wherein one of the pair of substrates includes a scanning line and a data line in a matrix form. And a semiconductor layer of a transistor is provided in an intersecting region between the scanning line and the data line, and the transistor is shielded from light on the other of the pair of substrates. An electro-optical device is provided, wherein an island-shaped light-shielding film is provided so as to overlap at least a part of the semiconductor layer in plan view.

According to the electronic device of the present invention, after bonding, the other substrate is provided with an island-shaped light-shielding film that overlaps with the semiconductor layer of one substrate in a state in plan view. Even if the other substrate is bonded to the substrate with poor positional accuracy, that is, even if a positional deviation occurs, the island-shaped light shielding film that has a small protrusion area to the light transmission region of each pixel causes electro-optics. The variation of the aperture ratio of each pixel in the display area of the device is reduced, and the aperture ratio of the pixel is prevented from varying for each liquid crystal device, and light from entering the transistor on one substrate is surely shielded. Thus, it is possible to provide an electronic apparatus including the electro-optical device having a configuration capable of suppressing display defects.

An electro-optical device according to the present invention is an electro-optical device having a pair of substrates disposed to face each other, a data line formed on one of the substrates, a transistor electrically connected to the data line, A channel region, a first source / drain region, a first LDD region on the first source / drain region side, a second source / drain region, and a second LDD region on the second source / drain region side. The transistor includes a semiconductor layer of the transistor, a lower light-shielding film that shields the first LDD region from below, and is formed on the other substrate, the first LDD. And an island-shaped light shielding film covering the region from above.

According to the electro-optical device of the present invention, even if the other substrate is bonded to one substrate with poor positional accuracy, that is, even if a positional shift occurs, each pixel protrudes to the light transmission region. The island-shaped light shielding film having a small area can reduce variation in the aperture ratio of each pixel in the display area of the electro-optical device, and can prevent the pixel aperture ratio from being varied for each liquid crystal device. In addition, an electro-optic having a configuration in which display defects can be suppressed by surely shielding the island-shaped light-shielding film together with the lower light-shielding film that light is incident on the first LDD region of one substrate. An apparatus can be provided.

Further, the scanning line intersects with the data line, and the lower light shielding film is formed so as to overlap the scanning line in a plan view.

According to the present invention, even if the other substrate is bonded to one substrate with poor positional accuracy, that is, even if a positional deviation occurs, the island that has a small protrusion region to the light transmission region of each pixel. Due to the shape of the light shielding film, variation in the aperture ratio of each pixel in the display area of the electro-optical device can be reduced, and variation in the aperture ratio of the pixel can be prevented from one liquid crystal device to another. In addition, when light enters the first LDD region of one substrate, the island-shaped light-shielding film together with the lower light-shielding film overlapped in a plan view with respect to the scanning line reliably shields the display defect. An electro-optical device having a configuration that can be suppressed can be provided.

  The lower light-shielding film is the scanning line.

According to the present invention, even if the other substrate is bonded to one substrate with poor positional accuracy, that is, even if a positional deviation occurs, the island that has a small protrusion region to the light transmission region of each pixel. Due to the shape of the light shielding film, variation in the aperture ratio of each pixel in the display area of the electro-optical device can be reduced, and variation in the aperture ratio of the pixel can be prevented from one liquid crystal device to another. Also, an electro-optical device having a configuration in which display defects can be suppressed by surely blocking light incident on the first LDD region of one substrate together with the scanning lines by the island-shaped light shielding film. Can be provided.

Further, the pixel electrode that applies a driving voltage to the electro-optic material sandwiched between the one substrate and the other substrate, which is an upper layer of the transistor on one of the substrates and sandwiched between the one substrate and the other substrate, is seen in a plan view. The first source / drain region is electrically connected to the pixel electrode, and the second source / drain region is electrically connected to the data line. It is characterized by.

According to the present invention, even if the other substrate is bonded to one substrate with poor positional accuracy, that is, even if a positional deviation occurs, the island that has a small protrusion region to the light transmission region of each pixel. Due to the shape of the light shielding film, variation in the aperture ratio of each pixel in the display area of the electro-optical device can be reduced, and variation in the aperture ratio of the pixel can be prevented from one liquid crystal device to another. The LDD on the first source / drain region side which is electrically connected to the pixel electrode in the semiconductor layer of one substrate
An electro-optical device having a configuration capable of suppressing a display defect by light being incident on a first LDD region serving as a region and an island-shaped light-shielding film as well as a lower light-shielding film reliably shielding light. Can be provided.

The lower light-shielding film and the island-shaped light-shielding film have two projecting portions projecting in the data line direction in a plan view, and the first source / drain region side in the data line direction The projecting portion projecting toward the second source is formed wider than the projecting portion projecting toward the second source / drain region in a plan view.

According to the present invention, even if the other substrate is bonded to one substrate with poor positional accuracy, that is, even if a positional deviation occurs, the island that has a small protrusion region to the light transmission region of each pixel. Due to the shape of the light shielding film, variation in the aperture ratio of each pixel in the display area of the electro-optical device can be reduced, and variation in the aperture ratio of the pixel can be prevented from one liquid crystal device to another. Further, when viewed in a plan view, the protruding portion on the first source / drain region side protruding wider than the protruding portion protruding on the second source / drain region side in the data line direction in the island-shaped light-shielding film has one side That light is incident on the first LDD region located on the first source / drain region side of the substrate,
It is possible to provide an electro-optical device having a configuration capable of suppressing display defects by reliably shielding light together with the lower light-shielding film.

Furthermore, the lower light-shielding film and the island-shaped light-shielding film are formed so as to overlap at least a part of the channel region of the semiconductor layer in a plan view.

According to the present invention, even if the other substrate is bonded to one substrate with poor positional accuracy, that is, even if a positional deviation occurs, the island that has a small protrusion region to the light transmission region of each pixel. Due to the shape of the light shielding film, variation in the aperture ratio of each pixel in the display area of the electro-optical device can be reduced, and variation in the aperture ratio of the pixel can be prevented from one liquid crystal device to another. Further, in the state viewed from above, the first source / drain region side protruding portion that protrudes wider than the protruding portion that protrudes toward the second source / drain region side in the data line direction in the island-shaped light shielding film has the first LDD
By shielding the channel region in addition to the region, it is more reliable together with the lower light shielding film that light is incident on the first LDD region and the channel region located on the first source / drain region side of one substrate. Accordingly, it is possible to provide an electro-optical device having a configuration in which display defects can be suppressed by shielding light.

Furthermore, a scanning line intersecting with the data line is provided, and the semiconductor layer has a first extension portion extending in the scanning line direction on both sides in the scanning line direction in a plan view. The scanning line having a second extending portion extending toward the first source / drain region in the data line direction is connected to the gate electrode of the transistor provided in the upper layer of the channel region of the semiconductor layer. A first contact hole to be used when electrically connected to each other, and the lower light-shielding film and the island-shaped light-shielding film are formed in the second extending portion of the first contact hole. , At least a portion is formed so as to overlap in plan view.

According to the present invention, even if the other substrate is bonded to one substrate with poor positional accuracy, that is, even if a positional deviation occurs, the island that has a small protrusion region to the light transmission region of each pixel. Due to the shape of the light shielding film, variation in the aperture ratio of each pixel in the display area of the electro-optical device can be reduced, and variation in the aperture ratio of the pixel can be prevented from one liquid crystal device to another. Further, in the state viewed from above, the first source / drain region side protruding portion that protrudes wider than the protruding portion that protrudes toward the second source / drain region side in the data line direction in the island-shaped light shielding film has the first LDD
In addition to the region and the channel region, the first LD located on the first source / drain region side of one substrate is shielded from light by blocking the second extension portion of the first contact hole in a plan view.
It is possible to provide an electro-optical device having a configuration capable of suppressing display defects by more reliably shielding light incident on the D region together with the lower light-shielding film.

Further, a second contact hole used for electrically connecting the first source / drain region to the pixel electrode is formed in the first source / drain region, and the lower light shielding film and The island-shaped light shielding film is formed to overlap at least a part of the second contact hole in a plan view.

According to the present invention, even if the other substrate is bonded to one substrate with poor positional accuracy, that is, even if a positional deviation occurs, the island that has a small protrusion region to the light transmission region of each pixel. Due to the shape of the light shielding film, variation in the aperture ratio of each pixel in the display area of the electro-optical device can be reduced, and variation in the aperture ratio of the pixel can be prevented from one liquid crystal device to another. Further, in the state viewed from above, the first source / drain region side protruding portion that protrudes wider than the protruding portion that protrudes toward the second source / drain region side in the data line direction in the island-shaped light shielding film has the first LDD
The first source / drain region of one substrate is shielded by shielding the second contact hole formed in the first source / drain region in addition to the region, the second extension portion of the first contact hole, and the channel region. Configuration in which display defects can be suppressed by more reliably shielding light incident on the first LDD region, the channel region, and the first source / drain region located on the side together with the lower light shielding film. An electro-optical device having the above can be provided.

The lower light-shielding film and the island-shaped light-shielding film are formed so as to overlap at least a part of the second LDD region in a plan view.

According to the present invention, even if the other substrate is bonded to one substrate with poor positional accuracy, that is, even if a positional deviation occurs, the island that has a small protrusion region to the light transmission region of each pixel. Due to the shape of the light shielding film, variation in the aperture ratio of each pixel in the display area of the electro-optical device can be reduced, and variation in the aperture ratio of the pixel can be prevented from one liquid crystal device to another. In addition, in the plan view, the protruding portion on the second source / drain region side protruding narrower than the protruding portion protruding on the first source / drain region side in the data line direction in the island-shaped light-shielding film 1 LDD
In addition to the region, the second extended portion of the first contact hole, the channel region, and the second contact hole, the second LDD region is shielded to be positioned on the first source / drain region side of one substrate. In addition to the first LDD region, the channel region, and the first source / drain region, light is incident on the second LDD region located on the second source / drain region side together with the lower light-shielding film. It is possible to provide an electro-optical device having a configuration capable of suppressing display defects by reliably shielding light.

An electronic apparatus according to the present invention is an electronic apparatus including an electro-optical device having a pair of substrates arranged to face each other, and is electrically connected to the data line formed on one of the substrates. A transistor, a channel region, a first source / drain region, a first LDD region on the first source / drain region side, a second source / drain region, and a second source / drain region side. A semiconductor layer of the transistor having an LDD region; a lower light-shielding film that shields the first LDD region from below; and formed on the other substrate. And an island-shaped light shielding film that covers the first LDD region from above.

According to the electronic apparatus of the present invention, even if the other substrate is bonded to one substrate with poor positional accuracy, that is, even if a positional shift occurs, the protruding region to the light transmission region of each pixel The island-shaped light shielding film having a small thickness can reduce variation in the aperture ratio of each pixel in the display region of the electro-optical device, and can prevent the pixel aperture ratio from being varied for each liquid crystal device. Also,
An electro-optical device having a configuration capable of suppressing a display defect by light being incident on the first LDD region of one substrate by the island-shaped light-shielding film as well as the lower light-shielding film. The electronic device which comprises can be provided.

2 is a plan view of a liquid crystal device illustrating this embodiment. Sectional drawing cut | disconnected along the II-II line | wire in FIG. FIG. 2 is a partial plan view showing a part of a film formation pattern laminated on the TFT substrate of FIG. 1 and a position where a BM is arranged on a counter substrate. FIG. 4 is a partial plan view showing a state in which the BM of the counter substrate in FIG. 3 is arranged in the crossing region so as to be shifted in the X direction and the Y direction together with a part of the film formation pattern laminated on the TFT substrate. FIG. 4 is a partial plan view showing a modification in which the width of the convex portion of the BM in FIG. 3 is formed wider than the line width of the scanning line, together with a part of the film formation pattern laminated on the TFT substrate. FIG. 4 is a partial plan view showing a modification in which the width of the main body of the BM of FIG. 3 is made wider than the line width of data lines and capacitor lines together with a part of a film formation pattern laminated on a TFT substrate. In the liquid crystal device which shows 2nd Embodiment, the partial top view which shows a part of film-forming pattern laminated | stacked on the TFT substrate, and the arrangement position of BM of a counter substrate. FIG. 8 is a partial plan view showing a modification in which the width of the BM in FIG. 7 in the X direction is wider than the line width of the data line and the capacitor line, together with a part of the film formation pattern laminated on the TFT substrate. FIG. 2 is a diagram showing a configuration of a projector in which three liquid crystal devices of FIG. 1 are arranged. In the liquid crystal device which shows 3rd Embodiment, the partial top view which shows a part of the lower layer side of the film-forming pattern laminated | stacked on the TFT substrate, and the arrangement position of BM of a counter substrate. The partial top view which shows a part of the upper layer side of the film-forming pattern laminated | stacked on the TFT substrate of the liquid crystal device which shows 3rd Embodiment. FIG. 12 is a partial cross-sectional view of the TFT substrate taken along the line XII-XII in FIGS. 10 and 11 when FIGS. FIG. 11 is a partial plan view showing a part of a lower layer side of a film formation pattern stacked on a TFT substrate and an arrangement position of a BM having a shape different from that of FIG. 10 on a counter substrate. FIG. 14 is a partial plan view showing a part of a lower layer side of a film formation pattern laminated on a TFT substrate and an arrangement position of a BM having a shape different from those in FIGS. 10 and 13 on a counter substrate. The partial top view which shows a part of the lower layer side of the film-forming pattern laminated | stacked on the TFT substrate, and the arrangement | positioning position of BM of a different shape from FIG.10, FIG.13, FIG.14 of a counter substrate. FIG. 16 is a partial plan view showing a part of a lower layer side of a film formation pattern laminated on a TFT substrate and an arrangement position of a BM having a shape different from those in FIGS. 10 and 13 to 15 of the counter substrate. FIG. 17 is a partial plan view showing a part of a lower layer side of a film formation pattern stacked on a TFT substrate and an arrangement position of a BM having a shape different from those in FIGS. 10 and 13 to 16 on the counter substrate.

Embodiments of the present invention will be described below with reference to the drawings. In the following embodiments, the electro-optical device will be described by taking a light transmission type liquid crystal device as an example. In addition, of the pair of substrates that are arranged to face each other in the liquid crystal device, one substrate is an element substrate (hereinafter referred to as a TFT substrate), and the other substrate is a counter substrate that faces the TFT substrate. explain.

(First embodiment)
FIG. 1 is a plan view of a liquid crystal device showing the present embodiment, and FIG. 2 is a cross-sectional view taken along line II-II in FIG.

As shown in FIGS. 1 and 2, the liquid crystal device 100 includes, for example, a TFT substrate 10 using a quartz substrate, a glass substrate, a silicon substrate, and the like, and a TFT substrate 10 disposed so as to face the TFT substrate 10, for example, a glass substrate or a quartz substrate. The liquid crystal 50, which is an electro-optic material, is interposed in the internal space between the counter substrate 20 using a silicon substrate or the like. The TFT substrate 10 and the opposing substrate 2 which are arranged to face each other
0 is bonded by a sealing material 52.

A display region 10 h of the TFT substrate 10 that constitutes the display region 40 of the liquid crystal device 100 is formed on the surface 10 f side of the TFT substrate 10 in contact with the liquid crystal 50. Display area 1
At 0h, pixel electrodes (ITO) 9a that constitute pixels and apply a driving voltage to the liquid crystal 50 together with a counter electrode 21 described later are arranged in a matrix as shown in FIG. 3 described later.

On the pixel electrode 9a of the TFT substrate 10, an alignment film 16 that has been subjected to a rubbing process is provided. The alignment film 16 is made of a transparent organic film such as a polyimide film.

Further, in the display area 10h of the TFT substrate 10, a plurality of scanning lines 11a (see FIG. 3) for supplying a signal for turning on and off a gate electrode 3a described later and a plurality of data lines for supplying an image signal to the pixel electrode 9a. 6a (see FIG. 3) is wired in a matrix so as to intersect,
Pixel electrodes 9a are arranged in a matrix in a region partitioned by the scanning lines 11a and the data lines 6a.

A thin film transistor (hereinafter referred to as TFT) 30 (see FIG. 3), which is a switching element, is provided corresponding to each intersection region 80 (see FIG. 3) of the plurality of scanning lines 11a and the plurality of data lines 6a. A pixel electrode 9 a is connected to each TFT 30.

The TFT 30 is, for example, a semiconductor layer 1 made of a crystallized silicon film such as a polysilicon film (FIG. 3).
The gate electrode 3a (see FIG. 3) electrically connected to the scanning line 11a via the contact hole 12cv (see FIG. 3), and the gate electrode by covering the semiconductor layer 1 in a plan view. A main part is composed of a gate insulating film (not shown) that insulates 3a from the semiconductor layer 1.

The semiconductor layer 1 is described later through a channel region 1a, a source region (not shown) electrically connected to the data line 6a via a contact hole 81 (see FIG. 3), and a contact hole 83 (see FIG. 3). A drain region (not shown) electrically connected to the storage capacitor is provided.

Note that the scanning line 11a covers the semiconductor layer 1 of the TFT 30 in a plan view so that T
It also functions as a light-shielding film on the TFT substrate 10 side that blocks light that is about to enter the FT 30 from below. The data line 6a also functions as a light-shielding film on the TFT substrate 10 side that shields the light entering the TFT 30 from above by covering the semiconductor layer 1 of the TFT 30 in a plan view. In addition to the scanning line 11a, the TFT substrate 10 may be provided with a light-shielding film that blocks light entering the TFT 30 from below.

The gate electrode 3a of the TFT 30 turns on the channel region 1a by the ON signal of the scanning line 11a, whereby the image signal supplied to the data line 6a is supplied to the pixel electrode 9a.
A voltage between the pixel electrode 9 a and the counter electrode 21 provided on the counter substrate 20 is applied to the liquid crystal 50.

Although not shown, a storage capacitor is provided in parallel with the pixel electrode 9a. Note that the storage capacitor is electrically connected to the drain region of the semiconductor layer 1 through the contact hole 83 (see FIG. 3).

The storage capacitor functions as a capacitor in which one electrode is electrically connected to a fixed potential, and the other electrode is electrically connected to the pixel electrode 9a. By the storage capacity, the liquid crystal 5
The holding time of the voltage applied to 0 is extended, and for example, it is possible to hold a time that is three orders of magnitude longer than the time during which the image signal is supplied to the pixel electrode 9a.

Further, a capacitor line 400 (see FIG. 3) is provided in parallel with the pixel electrode 9a. The capacitor line 400 also functions as a capacitor in which one electrode is electrically connected to a fixed potential, and the other electrode is electrically connected to the pixel electrode 9a to hold the voltage of the pixel electrode 9a.

Note that the capacitor electrode and the capacitor line 400 also function as a light-shielding film on the TFT substrate 10 side that shields light entering the TFT 30 from above by covering the semiconductor layer 1 of the TFT 30 in a plan view. .

Further, it is composed of, for example, aluminum, chromium, or the like in a peripheral region of each pixel in a display region 20h described later on the surface 20f of the counter substrate 20 and facing each intersection region 80 between the scanning line 11a and the data line 6a. Each of the island-shaped light shielding films (hereinafter referred to as BM) 25 is provided. The BM 25 functions to block light incident on the TFT 30. B
M25 will be described in detail later with reference to FIG.

Further, a counter electrode (ITO) 21 for applying a driving voltage to the liquid crystal 50 together with the pixel electrode 9a is provided on the entire surface 20f on the BM 25. Further, a rubbing process is performed on the counter electrode 21 as well. An applied alignment film 26 is provided. The alignment film 26 is, for example,
It consists of a transparent organic film such as a polyimide film.

Further, the display area 20 h of the counter substrate 20 constituting the display area 40 of the liquid crystal device 100 is configured on the surface side of the counter electrode 21 in contact with the liquid crystal 50 at a position facing the display area 10 h of the TFT substrate 10.

The counter substrate 20 includes a display region 10 h of the TFT substrate 10 and a display region 20 h of the counter substrate 20.
A light shielding film 53 different from the BM 25 serving as a frame defining the display area 40 is provided by defining and partitioning the outer periphery of the display area 40.

When the liquid crystal 50 is injected into the space between the TFT substrate 10 and the counter substrate 20 by a known liquid crystal injection method, the sealing material 52 is missing and applied at a part of one side of the sealing material 52. . When the liquid crystal 50 is dropped into the space between the TFT substrate 10 and the counter substrate 20 by a known liquid crystal dropping method, the sealing material 52 is continuously applied in a circumferential shape without missing in the middle. .

The missing portion of the sealing material 52 constitutes a liquid crystal injection port 108 for injecting the liquid crystal 50 between the TFT substrate 10 and the counter substrate 20 bonded from the missing portion. The liquid crystal injection port 108 is sealed with a sealing material 109 after the liquid crystal is injected. In addition, liquid crystal 5 by the liquid crystal dropping method.
When 0 is dropped, the liquid crystal injection port 108 and the sealing material 109 are not necessary.

In order to connect the data line driving circuit 101 which is a driver for supplying an image signal to a data line (not shown) of the TFT substrate 10 at a predetermined timing and driving the data line in a region outside the sealing material 52 and an external circuit. The external connection terminal 102 is provided along one side of the TFT substrate 10.

Along the two sides adjacent to the one side, the scanning line 11a and the gate electrode 3a of the TFT substrate 10 are provided.
In addition, scanning line driving circuits 103 and 104 which are drivers for driving the gate electrode 3a of the TFT 30 by supplying scanning signals at a predetermined timing are provided. The scanning line driving circuits 103 and 104 are arranged at the positions facing the light shielding film 53 inside the sealing material 52 at the TFT.
It is formed on the substrate 10.

Further, the data line driving circuit 101 and the scanning line driving circuits 103 and 104 are formed on the TFT substrate 10.
The wiring 105 connecting the external connection terminal 102 and the vertical conduction terminal 107 is formed of 3 of the light shielding film 53.
It is provided facing the side.

The vertical conduction terminals 107 are formed on the four TFT substrates 10 at the corners of the sealing material 52. The lower end is between the TFT substrate 10 and the counter substrate 20, and the upper and lower conduction terminals 10.
7 and an upper conductive material 106 having an upper end in contact with the counter electrode 21 is provided. The vertical conductive material 106 establishes electrical conduction between the TFT substrate 10 and the counter substrate 20.

Next, the BM 25 of the counter substrate 20 will be described with reference to FIG. 3 shows the TF of FIG.
It is a fragmentary top view which shows a part of film-forming pattern laminated | stacked on T board | substrate, and the arrangement position of BM of a counter substrate.

As shown in FIG. 3, the semiconductor layer 1 of the TFT 30 includes the data line 6a in the Y direction in FIG. 3, which is the direction in which the data line 6a extends, at each intersection region 80 between the data line 6a and the scanning line 11a.
Are provided respectively.

Further, the gate electrode 3a of the TFT 30 is provided along the scanning line 11a in each crossing region 80 in the X direction in FIG. 3, which is the direction in which the scanning line 11a intersecting the data line 6a extends. As shown in FIG. 3, the scanning line 11a is formed so as to have a part protruding in the direction of the data line 6a.

As shown in FIG. 3, the BM 25 is formed by being patterned into island shapes that overlap with the semiconductor layer 1 of the TFT 30 in a state in plan view in each intersection region 80.

Specifically, in each intersection region 80, the main body portion 25h is formed by being patterned into a long island shape along the Y direction in FIG. Each main body portion 25h is formed in a larger area in a plan view than the semiconductor layer 1.

In the following description, the BM 25 located in one intersection region 80 among the BMs 25 located for each of the plurality of intersection regions 80 will be described as an example.

Further, since the gate electrode 3a is provided along the X direction in FIG. 3 in the intersection region 80, the BM 25 protrudes in the X direction in FIG. Each convex portion 25t is formed by patterning into an island shape that intersects the main body portion 25h. That is, as shown in FIG. 3, the BM 25 has a planar shape formed in a cross shape.

Note that the convex portion 25t is formed in a larger region in plan view than the gate electrode 3a. Further, the convex portion 25t is not limited to the gate electrode 3a, for example, in the X direction in FIG.
The capacitor line 400 functioning as a light-shielding film on the TFT substrate 10 side may be formed in an island shape so as to overlap with a narrow region.

The BM 25 is arranged such that at least a part of the BM 25 overlaps the semiconductor layer 1, preferably the TFT 30 in a plan view, so that light is incident on the TFT 30. The data line 6a, the scanning line 11a, the storage capacitor, and the capacitor line 400 have a function of shielding light.

In the pixel electrode 9a, the BM 25, the data line 6a on the TFT substrate 10 side, the scanning line 11
The area that does not overlap with a, the storage capacity, and the capacity line 400 in a plan view is a light transmission area in the pixel.

The configuration of the BM 25 described above is the same in the BM 25 provided in each intersection region 80.

Next, the operation of the present embodiment will be described. FIG. 4 is a partial plan view showing a state in which the BM of the counter substrate in FIG. 3 is arranged shifted in the X direction and the Y direction in the intersecting region together with a part of the film formation pattern laminated on the TFT substrate. In the following, a plurality of intersecting regions 80 are also used.
The BM 25 located in one intersection region 80 among the BMs 25 located every time will be described as an example.

When the counter substrate 20 is bonded to the TFT substrate 10 with a positional shift, that is, when a positional shift error occurs due to the bonding, as shown in FIG. 4, B formed on the counter substrate 20 is formed.
M25 is located in the intersecting region 80 so as to be shifted to at least one of the X direction and the Y direction in FIG. As a result, the BM 25 protrudes into the light transmission region in some pixels. Note that FIG. 4 shows the case where the counter substrate 20 is pasted in a position shifted in the X direction.
The main body 25h protruding in the Y direction of M25 is a diagram that protrudes into the light transmission region in two pixels adjacent in the vertical direction in FIG.

At this time, in the present embodiment, since the BM 25 is formed in an island shape, the BM is formed in a matrix shape or a stripe shape along the scanning line 11a and the data line 6a as in the conventional case. In contrast, the area in which the BM 25 protrudes into the transmission area of the pixel becomes smaller.

Specifically, as shown in FIG. 4, when the main body portion 25h of the BM 25 protrudes only in the Y direction, in the case of the BM indicated by the conventional two-dot chain line formed along the data line 6a, The BM protrudes from the transmissive region by the size of the region R2. However, in the BM 25 of the present embodiment, only the region R1 smaller than the region R2 protrudes from the transmissive region of the pixel. . This is the same even when the convex portion 25t of the BM 25 protrudes into the light transmission region of the pixel.

In addition, the BM 25 includes the TFT 3 provided along the data line 6a in the intersection region 80.
Since the main body 25h is patterned in a long island shape along the 0 semiconductor layer 1, when the counter substrate 20 is bonded to the TFT substrate 10 while being displaced, that is, the position is obtained by bonding. Even when a deviation error occurs, some deviation, for example, ± 0.5-0.
If the deviation is 7 microns, the main body 25h is positioned so as to overlap the semiconductor layer 1 as shown in FIG.

Furthermore, because the convex portion 25t is formed on the BM 25, when the counter substrate 20 is bonded to the TFT substrate 10 while being displaced, that is, when a displacement error occurs due to bonding. However, if there is a slight deviation, for example, a deviation of ± 0.5 to 0.7 microns, as shown in FIG. 4, the convex portion 25t is positioned at least overlapping the gate electrode 3a.

  Further, the above operation is the same in the BM 25 provided in each intersection region 80.

Thus, in the present embodiment, the BM of the counter substrate 20 arranged in the intersecting region 80.
25 indicates that at least a part of the semiconductor layer 1 formed along the data line 6a in the intersecting region 80 is patterned into an island shape overlapping the main body portion 25h in a plan view. .

In addition, the BM 25 is shown to have a convex portion 25t that overlaps with the gate electrode 3a provided along the scanning line 11a intersecting with the data line 6a in the intersecting region 80 in a plan view. That is, the BM 25 indicated that the planar shape is formed in a cross shape.

According to this, even if the position of the counter substrate 20 is shifted with respect to the TFT substrate 10 after bonding, the region R1 where the island-shaped BM 25 protrudes into the transmission region of the pixel is formed in the conventional matrix shape or The stripe-shaped BM is smaller than the region R2 that protrudes into the transmissive region of the pixel.

From this, the variation in the aperture ratio of the pixels due to the positional deviation of the counter substrate 20 with respect to the TFT substrate 10 between adjacent pixels is reduced, that is, even if the aperture ratio is reduced in a certain pixel, Compared to the matrix or stripe-shaped BM, the island-shaped BM
25, since the decrease in the aperture ratio can be minimized, the aperture ratio of each pixel in the display area 40 of the liquid crystal device 100 varies and the aperture ratio of the pixel varies for each liquid crystal device. This can be reduced compared to the conventional case.

Even if the counter substrate 20 is misaligned with respect to the TFT substrate 10, the BM 25 has a main body portion 25h and a convex portion 25t as long as it is slightly misaligned, for example, ± 0.5 to 0.7 microns. Thus, the TFT 30 is arranged in a state of being overlapped in a plan view.
It is possible to reliably shield light from entering the transistor 30.

From the above, it is possible to provide the liquid crystal device 100 having a configuration capable of suppressing display defects.

A modification will be described below with reference to FIG. FIG. 5 is a partial plan view showing a modified example in which the width of the convex portion of the BM in FIG. 3 is made wider than the line width of the scanning line, together with a part of the film formation pattern laminated on the TFT substrate.

As shown in FIG. 5, the width H1 of the convex portion 25t of the BM 25 in the present embodiment is set to the scanning line 1
The line width H2 may be wider than the line width H2 of 1a.

According to this, even if the counter substrate 20 is displaced with respect to the TFT substrate 10, the convex portion 25 t remains overlapped with the gate electrode 3 a.
The wide protrusion 25t can reliably block light from entering the gate electrode 3a extending in the X direction where the scanning line 11a is provided. Therefore, the light shielding effect on the gate electrode 3a is improved as compared with the present embodiment.

On the contrary, when the width H1 of the convex portion 25t is formed to be narrower than the line width H2 of the scanning line 11a as in the present embodiment shown in FIG. , TFT substrate 10
In contrast, even if the counter substrate 20 is misaligned, the convex portion 25t is difficult to protrude into the light transmission region of the pixel, and the variation in the aperture ratio of each pixel in the display region 40 is more reliably reduced. In addition, it is possible to prevent the aperture ratio of the pixels from varying for each liquid crystal device.

Another modification will be described below with reference to FIG. FIG. 6 is a partial plan view showing a modification in which the width of the main body portion of the BM of FIG. 3 is formed wider than the line width of the data line and the capacitor line together with a part of the film forming pattern laminated on the TFT substrate. is there.

As shown in FIG. 6, even if the width H5 of the main body portion 25h of the BM 25 in this embodiment is formed wider than the line width H3 of the data line 6a and the line width H4 of the capacitor line 400. I do not care. As shown in FIG. 5, after the width H1 of the convex portion is made larger than the line width H2 of the scanning line 11a, the width H5 of the body portion 25h of the BM 25 is changed to the line width H3 of the data line 6a and the capacitance line. 4
It may be formed wider than the line width H4 of 00.

According to this, even if the counter substrate 20 is displaced with respect to the TFT substrate 10, the main body portion 25 h remains overlapped with the semiconductor layer 1 in the intersection region 80. The wide main body 25h can reliably shield light from entering the semiconductor layer 1 extending in the Y direction where the line 400 is provided. Therefore, the light shielding effect on the semiconductor layer 1 is improved as compared with the present embodiment.

On the contrary, as in the present embodiment shown in FIG. 3, the width H5 of the main body 25h is narrower than the line width H3 of the data line 6a and the line width H4 of the capacitor line 400. If the counter substrate 20 is misaligned with respect to the TFT substrate 10, the main body portion 25 h is difficult to protrude into the transmitted light transmission region of the pixel, and each of the display regions 40 in the display region 40 is formed. Variations in the aperture ratio of the pixels can be more reliably reduced, and variation in the aperture ratio of the pixels can be prevented for each liquid crystal device.

(Second Embodiment)
FIG. 7 is a partial plan view showing a part of the film formation pattern laminated on the TFT substrate and the arrangement position of the BM on the counter substrate in the liquid crystal device according to the present embodiment.

The configuration of the liquid crystal device of the second embodiment differs from the liquid crystal device 100 of the first embodiment described above only in that the BM formed on the counter substrate 20 is formed in a rectangular shape. Therefore, only this difference will be described, and the same components as those of the liquid crystal device 100 of the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

As shown in FIG. 7, the BM 250 includes the semiconductor layer 1 of the TFT 30 in each intersection region 80.
And at least a part of the islands having a rectangular shape overlapping in a plan view.

Specifically, in each intersection region 80, the semiconductor layer 1 extends along the data line 60 in FIG.
Since the BM 250 is provided along the direction, the BM 250 is formed by patterning into an island shape having a long rectangular shape along the Y direction in FIG. Each BM 250 is formed in a larger area in a plan view than the semiconductor layer 1.

In the following description, the BM 250 located in one intersection region 80 among the BMs 250 located for each of the plurality of intersection regions 80 will be described as an example.

The above-described data on the TFT substrate 10 side indicates that light is incident on the semiconductor layer 1 by arranging the BM 250 so as to overlap at least a part of the BM 250 in a plan view. The line 6 a, the scanning line 11 a, the storage capacitor, and the capacitor line 400 have a function of shielding light. In addition, the structure of the above BM250 is B provided in each cross | intersection area | region 80.
The same applies to M250.

Thus, in the present embodiment, the BM 250 moves along the semiconductor layer 1 in FIG.
It was shown that it was formed in an island shape having a long rectangular shape along the direction.

According to this, even if a positional deviation of the counter substrate 20 occurs with respect to the TFT substrate 10 after bonding, the BM 250 does not have a convex portion as in the first embodiment. In the X direction in FIG. 7, when the BM 250 protrudes into the light transmission region of some pixels, the aperture ratio of each pixel in the display region 40 varies, and the aperture ratio of the pixel varies for each liquid crystal device. This can be reduced as compared with the first embodiment.

Even if the counter substrate 20 is misaligned with respect to the TFT substrate 10, the BM 250 is flat with respect to the semiconductor layer 1 as long as the misalignment is, for example, ± 0.5 to 0.7 μm. Since they are arranged while overlapping when viewed, it is possible to reliably block light from entering the semiconductor layer 1.

As described above, a liquid crystal device having a configuration capable of suppressing display defects can be provided.

A modification will be described below with reference to FIG. FIG. 8 is a partial plan view showing a modification in which the width of the BM in FIG. 7 in the X direction is wider than the line width of the data line and the capacitor line, together with a part of the film formation pattern laminated on the TFT substrate. is there.

In the present embodiment, in FIG. 7, the line width H5 in the X direction of the BM 250 is the data line 6a.
The line width H3 of the BM250 and the line width H3 of the data line 6a and the line width H3 of the capacitor line 400 are shown in FIG. You may form in the width | variety which overlaps in the state planarly seen with the wide gate electrode 3a which is a line width different from the width | variety H4.

According to such a configuration, even if a positional deviation of the counter substrate 20 occurs with respect to the TFT substrate 10 after the bonding, a slight deviation, for example, a deviation of ± 0.5 to 0.7 microns,
Since the BM 250 is arranged not only in the semiconductor layer 1 but also in a state of being seen in a plan view with respect to the gate electrode 3a, not only the semiconductor layer 1 but also the gate electrode that cannot be prevented in the present embodiment. It is possible to provide a liquid crystal device having a configuration capable of reliably shielding light from entering 3a.

Further, when the width of the BM 250 is formed wider than the line width H3 of the data line 6a and the line width H4 of the capacitor line 400, the BM 250 is shown in FIG. As shown in the figure, the light is projected to each light transmission region of pixels adjacent to the left and right.

However, when the counter substrate 20 is displaced with respect to the TFT substrate 10 after bonding, the aperture ratio of the pixel decreases due to the large protrusion of the BM 250 in one pixel. In the other adjacent pixel, the amount of protrusion of the BM 250 is reduced by the amount of protrusion of the BM 250, and the aperture ratio of the pixel is improved.

That is, since the aperture ratio of the pixel does not change when viewed in the entire pixel in the display area 40, variation in the aperture ratio of the pixel is reduced, and variation in the aperture ratio of the pixel is prevented for each liquid crystal device. A liquid crystal device that can be provided can be provided.

In the first and second embodiments described above, the main body 25h of the BM 25 and the BM
250 shows that the data line 6a is patterned along the semiconductor layer 1 in the direction in which the data line 6a extends to form an island shape. However, the present invention is not limited to this, and the semiconductor layer 1 extends in the scanning line 11a. In the case where the scanning line 11a is formed in an island shape by patterning in the direction in which the scanning line 11a extends, the first and second embodiments described above are used. The same effect as that of the embodiment can be obtained.

In the first and second embodiments described above, the main body 25h of the BM 25 and the B
M250 has been shown to be placed overlying the semiconductor layer 1, but the semiconductor layer 1 is a known LD
In the case of having a D structure, for the purpose of shielding light from entering the channel region 1a, the main body portion is disposed so as to overlap at least the LDD region in the source region and the drain region of the semiconductor layer 1. Only the portions 25 and BM250 may be formed wider than the light shielding film on the TFT substrate 10 side.

(Third embodiment)
FIG. 10 is a partial plan view showing a part of the lower layer side of the film formation pattern laminated on the TFT substrate and the position of the BM on the counter substrate in the liquid crystal device showing this embodiment, and FIG. FIG. 12 is a partial plan view showing a part of the upper layer side of the film formation pattern laminated on the TFT substrate of the liquid crystal device showing the embodiment, FIG. 12 is a diagram of the TFT substrate when FIG. 10 and FIG. 1
2 is a partial cross-sectional view taken along line XII-XII in FIG.

The configuration of the liquid crystal device of the third embodiment is the same as that of the liquid crystal device 100 of the first embodiment described above.
Compared with the liquid crystal device of the second embodiment, only the shape of the scanning line in a plan view and the shape of the BM formed in an island shape on the counter substrate are different. Therefore, only this difference will be described, and the same components as those of the liquid crystal device 100 of the first embodiment and the liquid crystal device of the second embodiment are denoted by the same reference numerals, and the description thereof is omitted.

As shown in FIGS. 10 and 11, in the display region 10h of the TFT substrate 10, a plurality of scanning lines 110 and pixel electrodes 9 for supplying a signal for turning on and off a gate electrode 113a described later are provided.
A plurality of data lines 6a for supplying image signals to a are arranged in a matrix so as to intersect with each other, and pixel electrodes 9a are arranged in a matrix in an area partitioned by the scanning lines 110 and the data lines 6a. Note that the scanning line 110 has the same function as the scanning line 11a described above.

A TFT 30 is provided corresponding to each intersection region 180 of the plurality of scanning lines 110 and the plurality of data lines 6a, and the pixel electrode 9a is electrically connected to each TFT 30.

The scanning line 110, the data line 6 a, the storage capacitor 70, the relay layer 93, and the TFT 30 are open areas of the pixels corresponding to the pixel electrodes 9 a (light transmission areas in the pixels) in a plan view on the TFT substrate 10. Is disposed in a non-opening region.

As shown in FIG. 12, on the TFT substrate 10, the scanning line 110, the TFT 30, and the storage capacitor 7
Various components such as 0 and the pixel electrode 9a are provided in a stacked structure.

This stacked structure includes, in order from the bottom, a first layer including the scanning line 110, a second layer including the TFT 30 having the gate electrode 113a, a third layer including the storage capacitor 70, a fourth layer including the data line 6a, It consists of the fifth uppermost layer including the pixel electrode 9a and the like.

In addition, a base insulating film 12 is provided between the first layer and the second layer, and a first interlayer insulating film 41 is provided between the second layer and the third layer. Second interlayer insulating film 42 between the fourth layer
The third interlayer insulating film 43 is provided between the fourth layer and the fifth layer, and the respective elements described above are short-circuited by the insulating films 12, 41, 42, and 43, respectively. Is prevented.

Hereinafter, each of these elements will be described in order from the lower layer. In addition, the 1st layer-2nd layer is shown by FIG. 10 as a top view among the laminated structures mentioned above, and from 3rd layer-5th layer is shown.
A plan view is shown in FIG.

As shown in FIG. 12, a scanning line 110 is provided as the first layer. As shown in FIG. 10, the scanning line 110 is formed by patterning in a stripe shape along the X direction. Specifically, the scanning line 110 is a main line portion 110 extending along the X direction.
The main part is configured with x and projecting portions 110y1 and 110y2 projecting in the Y direction along the data line 6a in the intersection region 180 from the main line portion 110x.

As shown in FIG. 10, in the Y direction along the data line 6a, a protrusion 110y2 protruding toward the first source / drain region 1e, which will be described later, is a protrusion protruding toward the second source / drain region 1d. It is wider than 110y1 in the X direction in a plan view.
Furthermore, the protrusion 110y2 is formed wider than the data line 6a in the X direction. Further, the protruding portions 110y1 and 110y2 of the scanning lines 110 adjacent in the Y direction are not connected to each other.

As shown in FIG. 10, the scanning line 110 includes a channel region 1a and a first source / drain region 1e, which will be described later, in the semiconductor layer 1, as shown in FIG.
In the first LDD region 1c, the second LDD region 1b, and a contact hole 810, which will be described later, Y
A portion 810b extending in the direction toward the first source / drain region 1e is provided so as to overlap in a plan view.

The scanning line 110 covers, from the lower side, at least the first LDD region 1c of the semiconductor layer 1 of the TFT 30 in plan view, specifically, not only the first LDD region 1c but also the channel region 1a, By covering the first source / drain region 1e, the second LDD region 1b, and the extended portion 810b of the contact hole 810 from the lower side, a TFT that blocks at least light entering the first LDD region 1c from the lower side It also functions as a light shielding film on the substrate 10 side. Therefore, the scanning line 110 constitutes the lower light shielding film in the present embodiment.

In addition to the scanning line 110, the TFT substrate 10 may be provided with a lower light-shielding film that blocks at least light entering the first LDD region 1c from the lower side. In this case, the lower light shielding film may be formed so as to overlap with the scanning line 110 in a plan view, or may be formed so as to overlap with at least the first LDD region 1c in a plan view. Absent.

If the lower light-shielding film formed separately from the scanning line 110 overlaps the first LDD region 1c in a plan view, the channel region 1a is added to the first LDD region 1c. , First source / drain region 1e, first LDD region 1c, second LDD region 1b
In addition, any one or all of the extended portions 810b of the contact hole 810 may be formed so as to overlap in a plan view.

As shown in FIG. 12, a TFT 30 is provided as the second layer. 10 and 12
As shown in FIG. 3, the TET 30 includes a main part of the semiconductor layer 1, the gate insulating film 2, and the gate electrode 113a.

The semiconductor layer 1 includes a channel region 1a, a first source / drain region 1e, a first LDD region 1c that is an LDD region on the first source / drain region side, a second source / drain region 1d, The main part is configured to have an LDD structure including a second LDD region 1b which is an LDD region on the second source / drain region side.

The second source / drain region 1d and the first source / drain region 1e are composed of a channel region 1
It is formed substantially symmetrically along the Y direction with reference to a. The second LDD region 1b is
It is formed between the channel region 1a and the second source / drain region 1d. The first
The LDD region 1c is formed between the channel region 1a and the first source / drain region 1e.

First source / drain region 1e, first LDD region 1c, second source / drain region 1
d, The second LDD region 1b is formed by implanting impurities into the semiconductor layer 1 by, for example, an ion implantation method or the like.

The first LDD region 1c and the second LDD region 1b are formed as regions having a lower concentration of implanted impurities than the first source / drain region 1e and the second source / drain region 1d.

As described above, if the semiconductor layer 1 has the LDD structure, the off-current flowing through the first source / drain region 1e and the second source / drain region 1d is reduced when the TFT 30 is not operating, and the TFT 30 It is possible to suppress a decrease in on-current and an increase in off-leakage current flowing during the operation.

A contact hole 810 that is a first contact hole is formed in the base insulating film 12. As shown in FIG. 10, the contact hole 810 is an extended portion that is a first extending member extending in the X direction on both sides in the X direction of the semiconductor layer 1 in a planar view in the intersecting region 180. 810a and the first source / drain region 1 in the Y direction
It is formed in an L shape having an extending portion 810b that is a second extending portion extending to the e side.

The contact hole 810 is used when the scanning line 110 is electrically connected to the gate electrode 113 a of the TFT 30, and is formed through the gate insulating film 2 and the base insulating film 12. The contact hole 810 has a function equivalent to that of the contact hole 12cv in the first and second embodiments described above.

As shown in FIGS. 10 and 12, the gate electrode 113 a is provided on the upper layer side of the semiconductor layer 1 through the gate insulating film 2. As shown in FIG. 10, the gate electrode 113a includes a body portion 130 that overlaps the channel region 1a of the TFT 30 in a plan view, and the body portion 1
30 extending from the main body portion 130 along the Y direction on both sides of the semiconductor layer 1 and extending toward the first source / drain region 1e side. Part 131. The gate electrode 113a has a function equivalent to that of the gate electrode 3a in the first and second embodiments described above.

As shown in FIG. 12, a storage capacitor 70 is provided as the third layer. The storage capacity 70 is
The lower capacitor electrode 71 and the upper capacitor electrode 300a are formed so as to face each other with the dielectric film 75 interposed therebetween.

As shown in FIGS. 11 and 12, the upper capacitor electrode 300 a is formed as a part of the capacitor line 300. The capacitor line 300 is disposed around the display area 10h where the pixel electrode 9a is disposed.

The upper capacitor electrode 300a is a fixed potential side capacitor electrode that is electrically connected to a constant potential source via the capacitor line 300 and maintained at a fixed potential. Further, the upper capacitor electrode 300a is formed from the upper layer side by T
It also has a function of blocking light incident on the FT 30.

The lower capacitor electrode 71 is a pixel potential side capacitor electrode electrically connected to the first source / drain region 1e and the pixel electrode 9a. More specifically, the lower capacitor electrode 71 is electrically connected to the first source / drain region 1e through the contact hole 183, which is the second contact hole, and the second interlayer insulating film 42 and the dielectric It is electrically connected to the relay layer 93 through a contact hole 84 opened through the film 75.

Further, the relay layer 93 is electrically connected to the pixel electrode 9 a through a contact hole 85 opened in the third interlayer insulating film 43. That is, the lower capacitor electrode 71 relays the electrical connection between the first source / drain region 1e and the pixel electrode 9a together with the relay layer 93. The lower capacitor electrode 71 also has a function of blocking light from entering the TFT 30 from the upper layer side.

As shown in FIGS. 10 and 11, the storage capacitor 70 is formed so as to cover the contact hole 810 in a plan view.

As shown in FIG. 12, the data line 6a is provided as the fourth layer. As shown in FIG. 11, the data lines 6a are formed by patterning in stripes along the Y direction. In the fourth layer, the relay layer 93 is formed of the same film as the data line 6a.

As shown in FIGS. 11 and 12, the data line 6a is a contact penetrating the first source / drain region 1d of the semiconductor layer 1 through the first interlayer insulating film 41, the dielectric film 75, and the second interlayer insulating film. It is electrically connected through a hole 181. Further, the data line 6a also has a function of blocking light from entering the TFT 30 from the upper layer side.

As shown in FIG. 12, the pixel electrode 9a is provided as the fifth layer. As shown in FIGS. 11 and 12, the pixel electrode 9a includes a lower capacitor electrode 71 and contact holes 183, 84, 85.
And the first source / drain region 1e of the semiconductor layer 1 through the relay layer 93.

Here, the peripheral region of each pixel in the display region 20 h on the surface 20 f of the counter substrate 20, which is made of, for example, aluminum, chromium, or the like at a position facing each cross region 180 between the scanning line 110 and the data line 6 a. Each BM 125 is provided. BM125
It has the same function as BM25 mentioned above.

When the counter substrate 20 is bonded to the TFT substrate 10, the BM 125 has at least the first LDD of the semiconductor layer 1 of the TFT 30 in each intersection region 180 as shown in FIG.
The region 1c is patterned and formed in an island shape so that at least a part thereof overlaps in a plan view and at least a part of the region 1c overlaps a part of the scanning line 110 in a plan view.

Specifically, when the counter substrate 20 is bonded to the TFT substrate 10,
At 0, the BM 125 is disposed along the Y direction in a plan view, and in the Y direction, protrudes toward the first source / drain region 1e and protrudes toward the second source / drain region 1d. A main portion is constituted by the protruding portion 125b.

The width H10 of the protrusion 125a in the X direction is wider than the width H11 of the protrusion 125b in the X direction when viewed from above (H10> H11). That is, the shape of the BM 125 in a plan view is formed in an upward convex shape along the Y direction. Further, the width in the X direction of the protrusion 125a is formed wider than the width in the X direction of the data line 6a.

Further, when the counter substrate 20 is bonded to the TFT substrate 10, the protruding portion 125 a is patterned in an island shape so that at least a part thereof overlaps with the protruding portion 110 y 2 of the scanning line 110 in plan view. The projecting portion 125b is patterned in an island shape so as to overlap at least a part of the projecting portion 110y1 of the scanning line 110 in a plan view.

More specifically, when the counter substrate 20 is bonded to the TFT substrate 10, the BM 125
As shown in FIG. 10, the protrusions 125 a and 125 b cause the channel region 1 a, the first source / drain region 1 e, the first LDD region 1 c, the second LDD region 1 b, and the contact hole 810 in the semiconductor layer 1. The extending portion 810b is patterned in an island shape so as to overlap in a plan view.

The BM 125 is arranged so that at least a part of the BM 125 overlaps at least a part of the first LDD region 1c of the semiconductor layer 1 in a plan view, so that light enters the LDD region 1c from above. The data line 6a on the TFT substrate 10 side and the lower capacitor electrode 7 described above.
1. It has a function of shielding light together with the upper capacitor electrode 300a.

The BM 125 is used to shield at least the first LDD region 1c from the TFT 3
This is because a light leakage current is relatively likely to occur in the first LDD region 1c as compared with the second LDD region 1b during the zero operation. That is, when light is incident on the first LDD region 1c during the operation of the TFT 30, a leakage current is generated in the TFT 30 than when light is incident on the second LDD region 1b. It is because it is easy to do.

As described above, in the present embodiment, the scanning line 110 protrudes in the Y direction along the data line 6a from the main line portion 110x in the intersecting region 180.
It is shown that y2 is provided, and the protrusion 110y2 is formed wider than the protrusion 110y1 in the X direction in a plan view.

In addition, when the counter substrate 20 is bonded to the TFT substrate 10, the BM 125 has the structure shown in FIG.
As shown in FIG. 5, in each crossing region 180, at least a part of the semiconductor layer 1 of the TFT 30 overlaps with at least a part of the semiconductor layer 1 in a plan view, and at least a part of the plane intersects a part of the scanning line 110. It was shown that each island was patterned and formed so as to overlap when viewed.

Specifically, the width H10 in the X direction of the protrusion 125a of the BM 125 is equal to the X of the protrusion 125b.
It is formed wider in the X direction in a plan view than the width H11 in the direction (H10> H1).
1) The protruding portion 125a is patterned in an island shape so that at least a portion thereof overlaps with the protruding portion 110y2 of the scanning line 110 in plan view, and the protruding portion 125b corresponds to the scanning line 11
It has been shown that it is patterned in an island shape so that at least a portion thereof overlaps the zero protrusion 110y1 in a plan view.

More specifically, as shown in FIG. 10, the BM 125 has a channel region 1a, a first source / drain region 1e, and a first LD in the semiconductor layer 1 by the protrusions 125a and 125b.
It has been shown that the D region 1c, the second LDD region 1b, and the extending portion 810b of the contact hole 810 are patterned in an island shape so as to overlap in a plan view.

According to this, even if the counter substrate 20 is bonded to the TFT substrate 10 with poor positional accuracy, that is, even if a positional shift occurs, an island where the protrusion area to the light transmission region of each pixel is small. The variation in aperture ratio of each pixel in the display area of the electro-optical device can be reduced by the BM125 having the shape, and the aperture ratio of the pixel can be prevented from varying for each liquid crystal device.

Further, since the BM 125 is arranged so as to cover the first LDD region 1c over a wide range in a plan view, even if the counter substrate 20 is bonded to the TFT substrate 10 with poor positional accuracy, The BM 125 can reliably cover the first LDD region 1c in a plan view.

That is, when the BM reliably shields the light incident on the first LDD region 1c together with the lower light shielding film, the light enters the first LDD region 1c of the semiconductor layer 1 of the TFT substrate 10, and the TFT 30 It is possible to provide an electro-optical device having a configuration capable of suppressing the occurrence of a display defect as well as a leakage current in FIG.

Hereinafter, a modified example of the present embodiment will be described with reference to FIGS. FIG.
FIG. 14 is a partial plan view showing a part of the lower layer side of the film formation pattern laminated on the TFT substrate and the arrangement position of the BM having a shape different from that of FIG. 10 on the counter substrate, and FIG. 14 shows the film formation laminated on the TFT substrate. It is a fragmentary top view which shows a part of the lower layer side of a pattern, and the arrangement position of BM of the shape different from FIG.10 and FIG.13 of a counter substrate.

FIG. 15 is a partial plan view showing a part of the lower layer side of the film formation pattern laminated on the TFT substrate and the arrangement position of the BM having a shape different from that of FIGS. FIG.
FIG. 10 and FIG. 1 show a part of the lower layer side of the film formation pattern stacked on the TFT substrate and the counter substrate.
3 to 15 are partial plan views showing the arrangement positions of BMs having shapes different from those shown in FIG. 15, and FIG.
FIG. 17 is a partial plan view showing a part of a lower layer side of a film formation pattern laminated on an FT substrate and an arrangement position of a BM having a shape different from that of FIGS. 10 and 13 to 16 of the counter substrate.

In the present embodiment, the BM 125 has a channel region 1a, a first source / drain region 1e, a first LDD region 1c, a second region in the semiconductor layer 1 when the counter substrate 20 is bonded to the TFT substrate 10. LDD region 1b and the extended portion 810 of the contact hole 810
For b, it was shown that it was patterned in an island shape so as to overlap in plan view.

Not only this, but as shown in FIG. 13, when the counter substrate 20 is bonded to the TFT substrate 10, the BM 125 overlaps only the region including the first LDD region 1c in a plan view. It may be patterned in an island shape. This also applies to the case where a lower light-shielding film is formed in addition to the scanning line 110.

Also by this, even if the counter substrate 20 is bonded to the TFT substrate 10 with poor positional accuracy, the projecting region to the light transmission region of each pixel is smaller than the present embodiment by the island-shaped BM 125. Variation in the aperture ratio of each pixel in the display area of the electro-optical device can be reduced, and the pixel aperture ratio can be prevented from varying among the liquid crystal devices.

In addition, since the BM 125 reliably blocks light incident on the first LDD region 1c with a minimum area, the light is incident on the first LDD region 1c in the semiconductor layer 1 of the TFT substrate 10, It is possible to provide an electro-optical device having a configuration capable of suppressing the occurrence of a display failure due to a leak current in the TFT 30 together with the lower light-shielding film.

Further, as shown in FIG. 14, when the counter substrate 20 is bonded to the TFT substrate 10, the BM 125 overlaps only the region including the first LDD region 1c and the channel region 1a in a plan view. It may be patterned in an island shape. This also applies to the case where a lower light-shielding film is formed in addition to the scanning line 110.

Also by this, even if the counter substrate 20 is bonded to the TFT substrate 10 with poor positional accuracy, the projecting region to the light transmission region of each pixel is smaller than the present embodiment by the island-shaped BM 125. Variation in the aperture ratio of each pixel in the display area of the electro-optical device can be reduced, and the pixel aperture ratio can be prevented from varying among the liquid crystal devices.

In addition, in a plan view, the BM 125 and the lower light-shielding film reliably shield light incident on the channel region 1a in addition to the first LDD region 1c in a larger area than the BM 125 shown in FIG. Light is incident on the first LDD region 1c and the channel region 1a in the semiconductor layer 1 of the TFT substrate 10, and a leakage current in the TFT 30 is generated.
An electro-optical device having a configuration capable of suppressing the occurrence of display defects can be provided.

As shown in FIG. 15, the BM 125 has a channel region 1 a and a contact hole 81 in addition to the first LDD region 1 c when the counter substrate 20 is bonded to the TFT substrate 10.
It may be patterned in an island shape so as to overlap only in the region including the zero extending portion 810b in a plan view. This also applies to the case where a lower light-shielding film is formed in addition to the scanning line 110.

Also by this, even if the counter substrate 20 is bonded to the TFT substrate 10 with poor positional accuracy, the projecting region to the light transmission region of each pixel is smaller than the present embodiment by the island-shaped BM 125. Variation in the aperture ratio of each pixel in the display area of the electro-optical device can be reduced, and the pixel aperture ratio can be prevented from varying among the liquid crystal devices.

Further, in a plan view, the BM 125 and the lower light-shielding film receive light incident on the extending portion 810b of the contact hole 810 in addition to the first LDD region 1c and the channel region 1a.
3. By reliably shielding light with a larger area than that of the modification shown in FIG. 14, light enters the first LDD region 1c in the semiconductor layer 1 of the TFT substrate 10, and leak current in the TFT 30 is generated. Thus, it is possible to provide an electro-optical device having a configuration that can more reliably suppress the occurrence of display defects than the configurations of FIGS. 13 and 14.

Furthermore, as shown in FIG. 16, when the counter substrate 20 is bonded to the TFT substrate 10, the BM 125 includes the channel region 1a and the contact hole 8 in addition to the first LDD region 1c.
It may be patterned in an island shape so as to overlap only in the region including the ten extending portions 810b and the contact hole 183 in plan view. This also means that the scanning line 110
The same applies to the case where the lower light-shielding film is formed.

Also by this, even if the counter substrate 20 is bonded to the TFT substrate 10 with poor positional accuracy, the projecting region to the light transmission region of each pixel is smaller than the present embodiment by the island-shaped BM 125. Variation in the aperture ratio of each pixel in the display area of the electro-optical device can be reduced, and the pixel aperture ratio can be prevented from varying among the liquid crystal devices.

Further, in a plan view, the BM 125 and the lower light-shielding film are formed in the contact hole 1 in addition to the first LDD region 1c, the channel region 1a, and the extended portion 810b of the contact hole 810.
The light incident on the first LDD region 1c in the semiconductor layer 1 of the TFT substrate 10 is surely shielded with a larger area than the modification shown in FIGS. It is possible to provide an electro-optical device having a configuration that can more reliably suppress the occurrence of a display defect as well as the occurrence of a leakage current in the TFT 30 than the configurations of FIGS.

As shown in FIG. 17, the BM 125 includes the first LDD region 1 c, the channel region 1 a, and the extended portion 810 b of the contact hole 810 when the counter substrate 20 is bonded to the TFT substrate 10. Only the region including the two LDD regions 1b may be patterned in an island shape so as to overlap in a plan view.

That is, the BM 125 does not necessarily have to be patterned so as to overlap the contact hole 183 in a plan view. In addition to this, in addition to the scanning line 110,
The same applies when the lower light-shielding film is formed.

Also by this, even if the counter substrate 20 is bonded to the TFT substrate 10 with poor positional accuracy, the projecting region to the light transmission region of each pixel is smaller than the present embodiment by the island-shaped BM 125. Variation in the aperture ratio of each pixel in the display area of the electro-optical device can be reduced, and the pixel aperture ratio can be prevented from varying among the liquid crystal devices.

Further, in a plan view, the BM 125 and the lower light-shielding film include the second LDD region 1 in addition to the first LDD region 1c, the channel region 1a, and the extended portion 810b of the contact hole 810.
The light incident on b is surely shielded in a wider area than the modifications shown in FIGS. 13 to 15, so that the light is incident on the first LDD region 1 c in the semiconductor layer 1 of the TFT substrate 10. It is possible to provide an electro-optical device having a configuration that can more reliably suppress the occurrence of a display defect as well as the occurrence of a leakage current in the TFT 30 than the configurations of FIGS.

Further, the liquid crystal device is not limited to the above-described illustrated examples, and it is needless to say that various changes can be made without departing from the gist of the present invention. For example, the above-described liquid crystal device has been described by taking an active matrix type liquid crystal display module using an active element (active element) such as a TFT (thin film transistor) as an example. An active matrix type liquid crystal display module using the active element (active element) may be used.

Furthermore, in the first to third embodiments described above, the electro-optical device has been described by taking a liquid crystal device as an example, but the present invention is not limited to this, and an electroluminescence device, in particular,
Organic electroluminescence device, inorganic electroluminescence device, etc., plasma display device, FED (Field Emission Display) device, SE
D (Surface-Conduction Electron-Emitter Di
The present invention can be applied to various electro-optical devices such as a display) device, an LED (light emitting diode) display device, an electrophoretic display device, and a device using a thin television using a thin cathode ray tube or a liquid crystal shutter.

In addition, the electro-optical device is a display device that forms elements on a semiconductor substrate, for example, LCOS.
(Liquid Crystal On Silicon) or the like. In LCOS, a single crystal silicon substrate is used as an element substrate, and a transistor is formed on a single crystal silicon substrate as a switching element used for a pixel or a peripheral circuit. In addition, a reflective pixel electrode is used for the pixel, and each element of the pixel is formed below the pixel electrode.

In addition, the electro-optical device has a display device in which a pair of electrodes are formed on the same layer of a substrate on one side, for example, IPS (In-Plane Switching), or a pair of electrodes on one substrate via an insulating film. It may be a display device FFS (Fringe Field Switching) formed.

Furthermore, examples of the electronic apparatus in which the liquid crystal device of the present invention is used include a projection display device, specifically, a projector. FIG. 9 is a diagram showing a configuration of a projector in which three liquid crystal devices of FIG. 1 are arranged.

As shown in the figure, in the projector 1100, for example, three (100R, 100G, 100B) liquid crystal devices 100 are disposed as light valves for RGB.

In the projector 1100, a white light source lamp unit 11 such as a metal halide lamp is used.
When projection light is emitted from 02, light components R, G, and B corresponding to the three primary colors of RGB are divided by the three mirrors 1106 and the two dichroic mirrors 1108, and the light valves 100R, 100G and 100B are guided respectively.

At this time, in particular, the B light is guided through a relay lens system 1121 including an incident lens 1122, a relay lens 1123, and an exit lens 1124 in order to prevent light loss due to a long optical path.

The light components corresponding to the three primary colors modulated by the light valves 100R, 100G, and 100B are synthesized again by the dichroic prism 1112, and then projected as a color image on the screen 1120 via the projection lens 1114.

DESCRIPTION OF SYMBOLS 1 ... Semiconductor layer, 1a ... Channel region, 1b ... Second LDD region, 1c ... First LDD region, 1d ... Second source / drain region, 1e ... First source / drain region, 3a ... Gate electrode, 6a Data line, 9a ... Pixel electrode, 11a ... Scanning line, 10 ... TFT substrate, 20 ... Counter substrate, 25 ... BM, 25t ... Projection, 30 ... TFT, 50 ... Liquid crystal, 80 ... Crossing region, 10
DESCRIPTION OF SYMBOLS 0 ... Liquid crystal device, 110 ... Scanning line, 110y1 ... Projection part, 110y2 ... Projection part, 113a ...
Gate electrode, 125 ... BM, 125a ... projection, 125b ... projection, 180 ... intersection region,
183 ... Contact hole, 250 ... BM, 400 ... Capacitance line, 810 ... Contact hole, 810a ... Extension member, 810b ... Extension member, 1100 ... Projector, H1 ... Width of convex part of BM, H2 ... Scan line Width, H3: Data line width, H4: Capacitance line width, H5: Cross-shaped BM body width, H6: Rectangular BM width.

Claims (19)

An electro-optical device having a pair of substrates disposed opposite to each other,
A scanning line and a data line are formed on one substrate of the pair of substrates so as to intersect in a matrix, and a semiconductor layer of a transistor is provided in an intersecting region between the scanning line and the data line. And
An electro-optical device, wherein the other substrate of the pair of substrates is provided with an island-shaped light-shielding film that shields the transistor from light and overlaps the semiconductor layer in a state in plan view. The semiconductor layer is provided along the direction in which the data line extends in the intersection region,
The electro-optical device according to claim 1, wherein the light shielding film is formed in an island shape along a direction in which the data line extends. The semiconductor layer includes a channel region, and a gate electrode electrically connected to the scanning line through a gate insulating film that covers the semiconductor layer in a plan view is provided on the channel region. Is provided along the direction in which the scanning line extends in the intersecting region,
The said light shielding film is provided with the convex part which protrudes in the direction which the said scanning line extends in the said intersection area | region, and overlaps with the said gate electrode in the state planarly viewed. 2. The electro-optical device according to 2. The electro-optical device according to claim 3, wherein a width of the convex portion is formed to be a line width different from a line width of the scanning line. The electro-optical device according to claim 4, wherein the scanning line functions as a light shielding film on the one substrate side that is different from the light shielding film and shields the transistor. The electro-optical device according to claim 2, wherein the light shielding film is formed in a rectangular shape. The capacitor line and the data line provided on the one substrate along the data line and having one electrode electrically connected to a fixed potential are shielded from the transistor, and are different from the light shielding film. The electro-optical device according to claim 1, wherein the electro-optical device functions as a light-shielding film on one substrate side. The electro-optical device according to claim 7, wherein a width of the light shielding film is formed to be different from a width of the data line and the capacitor line. An electronic apparatus comprising an electro-optical device having a pair of substrates disposed opposite to each other,
A scanning line and a data line are formed on one substrate of the pair of substrates so as to intersect in a matrix, and a semiconductor layer of a transistor is provided in an intersecting region between the scanning line and the data line. And
An electro-optical device comprising: an island-shaped light-shielding film that shields the transistor from light and that overlaps at least a part of the semiconductor layer in a plan view, on the other substrate of the pair of substrates Electronic equipment. An electro-optical device having a pair of substrates disposed opposite to each other,
A data line formed on one of the substrates;
A transistor electrically connected to the data line;
A channel region, a first source / drain region, a first LDD region on the first source / drain region side, a second source / drain region, and a second LD on the second source / drain region side.
A semiconductor layer of the transistor comprising a D region;
A lower light-shielding film that is formed under the semiconductor layer and shields the first LDD region from below;
An island-shaped light shielding film formed on the other substrate and covering the first LDD region from above;
An electro-optical device comprising: Comprising a scan line intersecting the data line;
The electro-optical device according to claim 10, wherein the lower light-shielding film is formed to overlap the scanning line in a plan view. 11. The lower light shielding film is a scanning line that intersects with the data line.
The electro-optical device according to 1. A pixel electrode that applies a driving voltage to an electro-optic material sandwiched between one of the substrates and the other of the transistors, which is an upper layer of the transistor on one of the substrates. Provided in a matrix,
The first source / drain region is electrically connected to the pixel electrode,
The electro-optical device according to claim 10, wherein the second source / drain region is electrically connected to the data line. The lower light-shielding film and the island-shaped light-shielding film have two projecting portions that project in the data line direction in a plan view.
The protrusion protruding toward the first source / drain region in the data line direction is formed wider than the protrusion protruding toward the second source / drain region in a plan view. The electro-optical device according to claim 10. 15. The electricity according to claim 14, wherein the lower light-shielding film and the island-shaped light-shielding film are formed so as to overlap at least a part of the channel region of the semiconductor layer in a plan view. Optical device. Comprising a scan line intersecting the data line;
The semiconductor layer has first extending portions extending in the scanning line direction on both sides in the scanning line direction in a plan view, and on the first source / drain region side in the data line direction. A first contact having a second extending portion that extends and used for electrically connecting the scanning line to a gate electrode of the transistor provided on the channel region of the semiconductor layer A hole is formed,
The lower light-shielding film and the island-shaped light-shielding film are formed so as to overlap at least partly in a plan view with the second extension portion of the first contact hole. The electro-optical device according to claim 14. A second contact hole used for electrically connecting the first source / drain region to the pixel electrode is formed in the first source / drain region;
The said lower side light shielding film and the said island-shaped light shielding film are formed so that at least one part may overlap with the said 2nd contact hole in planar view. 2. The electro-optical device according to item 1. The said lower side light shielding film and the said island-shaped light shielding film are formed so that at least one part may overlap with the said 2nd LDD area | region in planar view. 2. The electro-optical device according to item 1. An electronic apparatus comprising an electro-optical device having a pair of substrates disposed opposite to each other,
A data line formed on one of the substrates;
A transistor electrically connected to the data line;
A channel region, a first source / drain region, a first LDD region on the first source / drain region side, a second source / drain region, and a second LD on the second source / drain region side.
A semiconductor layer of the transistor comprising a D region;
A lower light-shielding film that is formed under the semiconductor layer and shields the first LDD region from below;
An island-shaped light shielding film formed on the other substrate and covering the first LDD region from above;
An electronic apparatus comprising an electro-optical device.

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