JP2009200075A - Heating and pressurizing system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a heating and pressurizing system realizing more optimum joining of semiconductor wafers by controlling the temperature of joined faces of the semiconductor wafers while the temperature is being increased or decreased. <P>SOLUTION: The heating and pressurizing system 70 includes a pressurizing plate AT supporting and pressurizing a substrate W, a central heater part HM1 disposed in the pressurizing plate to heat the central part of the substrate, a peripheral edge heater part HM3 disposed in the pressurizing plate to heat the peripheral edge of the substrate, and a temperature control part 77 controlling the central and peripheral edge heater parts to coincide the temperature of an area around the central part with that of an area around the peripheral edge when heating the substrate from a first temperature to a second temperature. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a heating and pressurizing system in a step of laminating a substrate such as a semiconductor wafer, and more particularly to a heating and pressurizing system for bonding the substrates to each other.

  In recent years, as electronic devices such as mobile phones and IC cards have become highly functional, semiconductor devices (LSI, IC, etc.) mounted therein have been made thinner or smaller. In addition, in order to increase the storage capacity without reducing the line width, a three-dimensional mounting type semiconductor device in which several layers of semiconductor wafers are stacked, such as an SD card or MEMS, is increasing.

Patent Document 1 proposes a heating and pressurizing system in which semiconductor wafers are overlapped and bonded to increase productivity. In other words, the heat and pressure system manufactures a three-dimensional mounting type semiconductor device by preparing a pair of wafer holders on which a single wafer is placed and heating and pressing each of them in a face-to-face relationship. In order to ensure bonding, it is extremely important that the pressure and temperature applied to the semiconductor wafer are uniform throughout the process. The large temperature distribution is directly connected to the thermal expansion distribution, which causes relative displacement between two semiconductor wafers and accumulation of strain. For this reason, in the heating and pressurizing system shown in Patent Document 1, the semiconductor wafers are heated and pressed together after the temperature distribution is made uniform under a steady state after reaching the target temperature.
JP 2007-103225 A

However, in order to perform desired electrode bonding with a heating and pressing system, it is not enough to reduce the steady-state temperature distribution. The temperature distribution is most generated in the semiconductor wafer during a “heating” or “cooling” transition. During the transition, the movement of thermal energy is intense, and it is not uncommon for temperature distribution to occur several times to several tens of times that during steady state (= thermal equilibrium). For example, in the conventional heating and pressurizing system, when the wafer temperature is measured at the measurement point A at the center of the wafer, the measurement point B at the middle of the wafer, and the measurement point C at the outer edge of the wafer shown in FIG. As shown in FIG. 8B, the temperature curve from the start to the end of heating is greatly different at the measurement points. For example, the temperature difference in the temperature rise time AT between the measurement point A at the wafer center and the measurement point C at the wafer outer edge
Are greatly different and the temperature difference of the cooling time CT
Also grows. In particular, the outer surface of the wafer is exposed to the environment in the chamber, and heat is taken away by radiant heat or convective heat dissipation.

  For example, if a large temperature distribution is generated in the temperature raising process, the adverse effect remains even if the temperature distribution is made smaller at the subsequent steady state. If the large thermal expansion distribution generated during the temperature rise is held by friction between the semiconductor wafers, it will be transferred to a steady state and bonded, or if the temperature distribution during the temperature rise or cooling is severe, A large thermal strain is generated in the element, leading to fluctuations or destruction of the element characteristics.

  The present invention has been made to solve such problems, and controls the temperature of the bonding surface between semiconductor wafers during the transition of at least one of “heating” and “cooling”. Therefore, an object of the present invention is to provide a heating and pressurizing system capable of more optimally bonding semiconductor wafers.

The heating and pressing system according to the first aspect is a heating and pressing system that heats and pressurizes at least two substrates and processes them into an integrated substrate. This heating and pressurizing system is configured to support and pressurize a substrate, a pressurizing plate disposed in the pressurizing plate, a central heater unit heating the central portion of the substrate, and disposed in the pressurizing plate. A peripheral heater portion for heating the peripheral portion, and when the substrate is heated from the first temperature to the second temperature, the central heater portion and the peripheral heater portion so that the temperature near the central portion and the temperature near the peripheral portion coincide with each other. A temperature control unit for controlling.
According to such a configuration, the temperature distributions in the vicinity of the central portion and the peripheral portion of the surface where the two substrates are joined coincide with each other in a transient state from the first temperature (low temperature) to the second temperature (high temperature). Therefore, the bonding failure between the two substrates can be extremely reduced.

The heating and pressurizing system according to the second aspect is arranged in a pressurizing plate that supports and pressurizes the substrate, a central cooling unit that cools the central part of the substrate, and a pressurizing plate. A peripheral cooling part for cooling the peripheral part of the substrate, and a central cooling part so that the temperature near the central part and the temperature near the peripheral part coincide when the substrate is cooled from the second temperature to the first temperature. A temperature control unit that controls the peripheral cooling unit.
According to such a configuration, since it is possible to control the temperature distribution in the vicinity of the center and the periphery of the surface where the two substrates are joined in a transient state from high temperature to low temperature, Substrate bonding defects can be extremely reduced.

  The heating and pressurizing system of the present invention can perform stable wafer bonding by controlling the temperature so as to reduce the temperature difference in the transient state between the central portion and the outer edge portion of the semiconductor wafer.

<Overall configuration of wafer bonding apparatus>
FIG. 1 is an overall perspective view of the wafer bonding apparatus 100.
The wafer bonding apparatus 100 includes a wafer loader WL and a wafer holder loader WHL. The wafer loader WL and the wafer holder loader WHL are articulated robots, and are movable in directions of six degrees of freedom (X, Y, Z, θX, θY, θZ). Further, the wafer loader WL can move a long distance in the Y direction along the rail RA, and the wafer holder loader WHL can move a long distance in the X direction along the rail RA.

  The wafer bonding apparatus 100 has a wafer stocker 10 for storing a plurality of semiconductor wafers W in the periphery thereof. The wafer bonding apparatus 100 has a wafer stocker 10-1 for storing the first semiconductor wafer W1 and a wafer stocker 10-2 for storing the second semiconductor wafer W2 in order to bond the first semiconductor wafer W1 and the second semiconductor wafer W2. And are prepared. A wafer pre-alignment apparatus 20 that pre-aligns the semiconductor wafer W is provided in the vicinity of the wafer stocker 10. The semiconductor wafer W taken out from the wafer stocker 10 by the wafer loader WL is sent to the wafer pre-alignment apparatus 20.

  The wafer bonding apparatus 100 includes a wafer holder stocker 30 that stores a plurality of wafer holders WH. Since the wafer holder WH can be used for both the first semiconductor wafer W1 and the second semiconductor wafer W2, the wafer holder stocker 30 is provided in one place. A wafer hod pre-alignment apparatus 40 that pre-aligns the wafer holder WH is provided in the vicinity of the wafer holder stocker 30. The wafer holder WH taken out from the wafer holder stocker 30 by the wafer holder loader WHL is sent to the wafer holder pre-alignment apparatus 40. In the wafer holder pre-alignment apparatus 40, the pre-aligned semiconductor wafer W is placed on the pre-aligned wafer holder WH by the wafer loader WL.

  The wafer bonding apparatus 100 includes an aligner 50 that aligns a wafer holder WH on which a pair of semiconductor wafers W are placed and superimposes two semiconductor wafers W with line width accuracy of the semiconductor device. The wafer holder WH on which the semiconductor wafer W is placed is sent from the wafer holder pre-alignment apparatus 40 to the aligner 50 by the wafer holder loader WHL. Further, the wafer holder WH on which the stacked semiconductor wafers W are placed is sent to the heating and pressing device 70 by the wafer holder loader WHL.

  The heating / pressurizing device 70 of the wafer bonding apparatus 100 heats, pressurizes, and bonds the semiconductor wafers W stacked on the aligner 50 via the wafer holder WH. The heating and pressurizing device 70 heats the semiconductor wafer W to a predetermined temperature with a heater and applies a predetermined pressure for a predetermined time with a pressurizing actuator, so that metal bumps such as Cu that are electrodes on the semiconductor wafer W are bonded to each other. Join. At this time, resin may be sealed between the semiconductor wafers W and heated. Further, the inside of the heating and pressurizing apparatus 70 is maintained in a vacuum state or a nitrogen atmosphere. The heating and pressing apparatus 70 will be described in detail with reference to FIG.

  The wafer bonding apparatus 100 has a separation unit 80 next to the heating and pressing apparatus 70. The separation unit 80 removes the bonded semiconductor wafer W from the wafer holder WH. The cooled semiconductor wafer W is taken out from the separation unit 80 by the wafer loader WL and sent to the bonded wafer stocker 85. The cooled wafer holder WH is taken out from the separation unit 80 by the wafer holder loader WHL and returned to the wafer holder stocker 30 again. The bonded semiconductor wafer W is then diced and cut into individual semiconductor devices.

  The wafer bonding apparatus 100 is provided with a main controller 90 that controls the entire wafer bonding apparatus 100. The main controller 90 performs overall control by exchanging signals with a controller that controls each device such as the wafer loader WL, the wafer holder loader WHL, the wafer pre-alignment device 20, and the wafer holder pre-alignment device 40.

<Configuration of heating and pressing apparatus 70>
FIG. 2A is a conceptual side view showing the heating and pressing device 70.

  The heating and pressurizing device 70 aligns the position with the aligner 50 and heats and presses the superimposed first semiconductor wafer W1 and second semiconductor wafer W2. The first semiconductor wafer W1 is held in the −Z direction by the first wafer holder WH1. The first wafer holder WH1 is supported by the first top plate TP1. The first top plate TP1 is supported by a first temperature adjustment plate AT1 made of a material having high heat conductivity and provided with a heater HT and a cooling pipe CL. Further, the first temperature adjustment plate AT1 is supported by the first base plate BP1, and the first base plate BP1 is provided on the frame 71 of the heating and pressurizing device 70.

  On the other hand, the second semiconductor wafer W2 is held in the + Z direction by the second wafer holder WH2. The second wafer holder WH2 is detachably supported by a second top plate TP2, and the second top plate TP2 is supported by a second temperature adjustment plate AT2 made of a material having high heat conductivity and having a heater HT and a cooling pipe CL. It has been. Further, the second temperature adjustment plate AT2 is provided on the second base plate BP2. The second base plate BP2 is supported by an inner pressure actuator 73 and an outer pressure actuator 75.

  The first semiconductor wafer W1 and the second semiconductor wafer W2 are heated by the heaters HT in the first temperature adjustment plate AT1 and the second temperature adjustment plate AT, respectively. The first semiconductor wafer W1 and the second semiconductor wafer W2 are pressed by the inner pressure actuator 73 and the outer pressure actuator 75 so that the semiconductor wafer W is evenly pressurized.

  The temperature adjustment of the heating and pressing apparatus 70 is controlled by the temperature control unit 77. For example, the temperature control unit 77 predicts the wafer temperature from the temperature of the top plate TP, and adjusts the heater temperature or the cooling water amount. The temperature control unit 77 includes a temperature prediction unit 78.

  FIG. 2B is a side view conceptually illustrating an enlarged configuration from the second semiconductor wafer W2 to the second base plate BP2 illustrated in FIG. Since the first base wafer BP1 to the first base plate BP1 have the same configuration, the first semiconductor wafer W1 and the second semiconductor wafer W2 are not distinguished from the semiconductor wafer W and the base plate BP when it is not necessary to specify them. To do.

  The wafer holder WH of this embodiment is made of a ceramic material such as alumina (Al 2 O 3) or aluminum nitride (AlN). Aluminum nitride is particularly suitable for heating or cooling the semiconductor wafer W because of its high thermal conductivity.

  The top plate TP is made of an alloy excellent in wear resistance or impact resistance. In addition, a heater module HM and a cooling pipe CL are formed below the top plate TP so that heat conduction can be efficiently performed. A temperature sensor TS is disposed in the vicinity of the top plate TP. Feedback control of the heater temperature or the cooling water amount can be performed by the temperature output of the temperature sensor TS.

  A plurality of temperature sensors TS are arranged so that the temperature of the top plate TP can be measured in each region of the wafer central portion, wafer intermediate portion, and wafer outer edge portion. Note that the temperature sensor TS may be provided on the temperature adjustment plate AT. There is a heater module support HMS at the bottom of the heater module HM, and the boundary between the heater module support HMS and the heater module support HMS is partitioned by a heat insulator IS to enable temperature management for each heater module support HMS. ing.

FIG. 3 is a top perspective view of the temperature adjustment plate AT showing the arrangement of the heater HT or the cooling pipe CL.
The temperature adjustment plate AT is made of a material having a high heat transfer rate, for example, copper or aluminum alloy in order to improve heat transfer from the heater HT or from the cooling pipe CL.
The base plate BP is made of an alloy excellent in wear resistance or impact resistance.

  As shown in FIG. 3A, a plurality of heater modules HM are evenly arranged on the temperature adjustment plate AT, for example, 12 heater modules HM. The twelve heater modules HM may be individually controlled. However, the heater modules HM can be easily controlled by dividing the semiconductor wafer W into regions where temperature changes are likely to occur. For example, the heater module HM includes a first heater module HM1 disposed in the center of the semiconductor wafer W, a plurality of second heater modules HM2 disposed in the wafer middle so as to surround the first heater module HM1, and a second The plurality of third heater modules HM3 are arranged at the outer edge of the wafer so as to surround the heater module HM2. The second and third heater modules HM2 and HM3 each have a heater HT, and the heaters are arranged in a ring shape as a whole. Further, dividing and arranging the plurality of heater modules HM also has an effect of facilitating the absorption of the distortion of the top plate TP due to variations in wafer thickness.

  As shown in FIG. 3B, the cooling pipe CL is formed in a ring shape below the heater module HM or so as to penetrate the heat module HM, and is attached to the heater HT that is a heat generation source and the wafer holder WH. The contacting top plate TP can be efficiently cooled. The cooling pipe CL also has a triple structure, and is formed by a first cooling pipe CL1 that cools the wafer center part, a second cooling pipe CL2 that cools the wafer middle part, and a third cooling pipe CL3 that cools the wafer outer edge part. The The heater HT and the top plate TP are cooled by flowing a coolant such as pure water at 20 ° C. through the cooling pipe CL. In addition, the cooling pipe CL can efficiently cool, for example, by forming two inlets IN and outlets OUT of three refrigerants, respectively, and also uniformizing the semiconductor wafer by changing the flow rate of each refrigerant. Can be cooled to.

<Temperature adjustment in transient state during temperature rise or cooling>
<< Example 1 >>
The heating / pressurizing apparatus 70 of this embodiment not only keeps the predetermined temperature or the predetermined time in the steady time HT uniformly over the entire surface of the semiconductor wafer, but also in the transient state where the temperature is rising or cooling. Temperature can be controlled uniformly. The following will be described with reference to the drawings.

  FIG. 4A is a graph showing the values of the respective measurement points of the semiconductor wafer W subjected to feedback control, and FIG. 4B is a graph showing the relationship between the temperature of the top plate TP and the wafer temperature. In FIG. 4 as well, as shown in FIG. 8A, the wafer center is the measurement point A, the wafer middle is the measurement point B, and the wafer outer edge is the measurement point C. FIG. 5A is a graph showing the control of the amount of heat generated by the heater HT, and FIG. 5B is a graph showing the control of the flow rate of the cooling pipe CL.

  The temperature control unit 77 of the heating and pressurizing apparatus 70 sets the target temperature T2, and controls the temperature by individually controlling the plurality of heater modules HM or the plurality of cooling pipes CL. As shown in FIG. 4A, a uniform temperature distribution is exhibited in the temperature rise time AT, the steady time HT, and the cooling time CT from the normal temperature T1 to the target temperature T2.

  The temperature control unit 77 performs feedback control of information from the temperature sensor TS. However, the temperature of the top plate TP can be measured, not the actual temperature of the semiconductor wafer W. The peripheral part of the semiconductor wafer W is dissipated by being in contact with the external environment. Further, how heat is transferred from the top plate TP to the semiconductor wafer, which is contact thermal resistance, differs depending on the pressurized state. For these reasons, it is difficult to predict the actual temperature of the semiconductor wafer. For this reason, correction is made in advance based on experimental values using a TC wafer (sensor embedded temperature measurement wafer), and the temperature control unit 77 controls the heater HT or cooling water. By providing a plurality of control data through experiments, the temperature control unit 77 can feedback control the wafer temperature.

  FIG. 4B is a graph showing the relationship between the temperature of the top plate TP at the measurement point B and the temperature of the semiconductor wafer. As can be seen from the figure, since it takes time to conduct heat from the top plate TP to the semiconductor wafer, the amount of heat generated by the heater HT is controlled while predicting. For example, the temperature predicting unit 78 of the temperature control unit 77 predicts the temperature of the semiconductor wafer by comparing the temperature change rate per second of the top plate TP with an experimental value. That is, the temperature prediction unit 78 of the temperature control unit 77 predicts the temperature of the semiconductor wafer at the measurement time for each measurement point of the wafer, and controls the heat generation amount of the heater HT by the temperature increase time AT and the steady time HT. Further, the temperature control unit 77 similarly controls the flow rate of the cooling pipe CL for the cooling time CT.

  As shown in FIG. 4A, the heating value of the heater HT is equal to the heater module HM1 at the center of the wafer and the wafer in order to make the temperature of the entire surface of the semiconductor wafer uniform throughout the entire heating and pressurizing process of the semiconductor wafer. The amount of heat generated is changed between the heater module HM2 at the intermediate portion and the heater module HM3 at the outer edge of the wafer.

  For example, as shown in FIG. 5A, the heating time AT causes the heater module HM1 at the center of the wafer to generate a heating amount of Wt4, and causes the heater module HM2 at the middle of the wafer to generate a heating amount of Wt5. A heating amount of Wt6 is generated in the heater module HM3.

  The temperature control unit 77 gradually reduces the amount of heat generated so that the temperature of the semiconductor wafer does not rise too much immediately before shifting to the steady time HT. For example, during the steady time HT, the heater module HM1 at the wafer center is gradually heated to Wt1, the heater module HM2 at the wafer middle is gradually heated to Wt2, and the heater module HM3 at the wafer outer edge is gradually heated to Wt3. Make quantity.

  During the cooling time CT, all heat generation amounts are set to 0 (Wt0). The temperature controller 77 makes the temperature of the entire surface of the semiconductor wafer uniform by changing the degree of decrease in the amount of heat generated by the heater module HM1 at the center of the wafer, the heater module HM2 at the middle of the wafer, and the heater module HM3 at the outer edge of the wafer. To lower.

  Further, the cooling time CT changes the flow rate (l / min) flowing through the cooling pipe CL as shown in FIG. That is, the temperature control unit 77 controls the heat generation amount of the heater HT and the flow rate of the cooling pipe CL at the start of cooling. Since the cooling start period is a period in which distortion is likely to occur in the semiconductor wafer, the amount of heat generated by the heater HT and the flow rate flowing through the cooling pipe CL are controlled by suitable control so that the semiconductor wafer is not rapidly cooled.

FIG. 6 is a flowchart showing feedback control of temperature control.
In Step P31, the operator sets the target temperature T2, the temperature rise time AT, the steady time HT, the cooling time CT, and the pressurizing force.

  In step P32, the temperature control unit 77 collates with stored information such as the set target temperature T2, the temperature rise time AT, the steady time HT, the cooling time CT, and the experimental value at the applied pressure, thereby determining the temperature of the top plate TP. Gradient or temperature correction control is performed.

  In Step P33, the temperature control unit 77 measures the temperature of the top plate TP from the temperature sensor TS in each region of the wafer central portion, the wafer intermediate portion, and the wafer outer edge portion.

  In step P34, the temperature control unit 77 measures the temperature change per unit time, and determines whether it approximates the temperature change of the experimental value.

In Step P35, the temperature control unit 77 determines whether the top plate TP has reached a predetermined temperature at a predetermined time or whether the time change rate of the temperature of the top plate TP is normal.
If not, the process proceeds to step P36, and the amount of heat generated by the heater HT or the flow rate of the cooling pipe CL is changed based on the experimental value.
If so, the process proceeds to Step P37.

  In step P37, the temperature control unit 77 determines whether the heating / cooling process has been completed. If not, the process returns to step P33 to continue the temperature feedback control. When the heating / cooling process is finished, the temperature feedback control is finished and the process proceeds to the next process.

<Example 2>
In this embodiment, the uniformity of the wafer temperature is maintained by removing the cause of heat dissipation that causes the wafer temperature to be non-uniform. As shown in FIG. 2A, the back surface side of the second semiconductor wafer W2 has a multilayer structure of the second wafer holder WH2, the second top plate TP2, the second temperature adjustment plate AT2, and the second base plate BP2. It is also a source of heat. For this reason, it is not necessary to consider the heat radiation to the back surface side of the second semiconductor wafer W2, and it is not necessary to consider the heat radiation because there is the first semiconductor wafer W1 facing the front surface side of the second semiconductor wafer W. The problem is the side surface from the top plate TP to the semiconductor wafer W, that is, the region in contact with the outer edge from the top plate TP to the semiconductor wafer W.

  The inside of the chamber of the heating and pressurizing apparatus 70 is in a vacuum state. For example, since the temperature of the semiconductor wafer W is increased to 450 ° C., radiant heat is released from the side surface from the top plate TP to the semiconductor wafer, and the wafer temperature becomes uneven. . This can be understood from the temperature rise and fall at the measurement point C on the outer edge of the wafer as shown in FIG. In addition, when an inert gas is injected into the chamber and covered with the gas, convective heat dissipation is also performed, and thus the non-uniformity of the wafer temperature is further increased.

  In the example shown in FIG. 7A, a ring-shaped heat shield plate SP is disposed so as to surround the semiconductor wafer W and the wafer holder WH. A material that reflects radiant heat is used on the inner surface of the heat shield plate SP. Thereby, discharge | release of a radiant heat can be suppressed. Further, by forming a heat insulating material outside the heat shield plate SP, heat conduction can be prevented and the wafer temperature becomes uniform.

  FIG. 7B is a view showing a method of maintaining the uniformity of the wafer temperature by making the temperature of the peripheral region in contact with the outer edge from the top plate TP to the semiconductor wafer W equal to the wafer temperature. In order to make the temperature of the outside environment equal to the wafer temperature, the heating and pressurizing apparatus 70 blows an inert gas G higher than the gas nozzle GN installed on the side of the wafer onto the semiconductor wafer. Both the periphery of the semiconductor wafer W and the semiconductor wafer W are close to each other, and are in a thermal equilibrium state. This makes it difficult for heat to move and makes the wafer temperature uniform. It is further preferable that the hot pressurizing apparatus 70 is provided with a cover for making it difficult for the high temperature inert gas G to escape, so that the high temperature inert gas G can be distributed all around the wafer.

<Example 3>
In this embodiment, the heat generation amount of the heater HT is controlled by predicting the wafer temperature by calculation.

The temperature control unit 77 of this embodiment has a temperature prediction unit 78, which predicts the semiconductor wafer temperature by calculation. The temperature predicting unit 78 calculates the contact thermal resistance between the semiconductor wafer, the wafer holder WH, and the top plate TP from the pressurized state, and predicts the wafer temperature. The contact thermal resistance becomes complicated because it changes to factors such as “surface roughness”, “hardness”, “thermal conductivity”, and “intervening fluid”. For example, in Japanese Patent Application No. 2007-268867, the contact thermal resistance is calculated using “Tachibana's formula”, but the resistance may be calculated using another calculation formula. Further, the temperature prediction unit 78 calculates the heat dissipation rate of the semiconductor wafer W in the peripheral region of the semiconductor wafer W. Further, since heat is likely to be trapped in the central portion of the semiconductor wafer W, the heat prediction rate is calculated by the temperature prediction unit 78.
Thus, by predicting the wafer temperature by calculation, the temperature control unit 77 can make an optimal correction even when a temperature change exceeding the prediction occurs in the manufacturing process. Further, even when the contact thermal resistance changes due to an unscheduled change in the pressurizing condition, the temperature controller 77 can make an optimal correction.

  In the second embodiment as well, the temperature of the wafer from the temperature sensor TS of the top plate TP is feedback-controlled as in the first embodiment, so that the wafer temperature can be predicted more accurately. Further, by adding a learning function to the feedback control, the temperature prediction unit 78 can predict the wafer temperature more flexibly and accurately.

1 is an overall perspective view of a wafer bonding apparatus 100. FIG. (A) is a block diagram of the side surface of the heating and pressing apparatus 70. FIG. (B) is a diagram showing the configuration of the base plate BP from the semiconductor wafer W. FIG. (A) is the figure which showed arrangement | positioning with the heater module HM and the heater HT. (B) is the figure which showed arrangement | positioning of the cooling piping CL. (A) is a graph which shows the value of each measurement point of the semiconductor wafer which carried out feedback control. (B) is a graph showing the relationship between the temperature of the top plate TP and the wafer temperature. (A) is the graph which showed control of the emitted-heat amount of heater HT. (B) is a graph showing control of the flow rate of the cooling pipe CL. 7 is a flowchart of feedback control of a temperature adjustment unit 77. (A) is a figure which shows the case where the thermal-insulation board SP is installed around the semiconductor wafer. (B) is a figure which shows the case where the gas nozzle GN is installed around the semiconductor wafer. (A) is a figure which shows the measurement point of wafer temperature. (B) is a graph of each measurement point in the conventional wafer temperature control.

Explanation of symbols

AT ... temperature adjustment plate (AT1 ... first temperature adjustment plate, AT2 ... second temperature adjustment plate)
AT ... Temperature rising time BP ... Base plate (BP1 ... 1st base plate, BP2 ... 2nd base plate)
CL ... Cooling pipe CT ... Cooling time G ... High temperature gas GN ... Gas nozzle HT ... Heater HM ... Heater module HMS ... Heater module support HT ... Steady time IS ... Heat insulation RA ... Rail TS ... Temperature sensor TP ... Top plate (TP1 ... 1st top plate, TP2 ... 2nd top plate)
T2 ... target temperature TS ... temperature sensor W ... semiconductor wafer (W1 ... first semiconductor wafer, W2 ... second semiconductor wafer)
WH: Wafer holder (WH1: First wafer holder, WH2: Second wafer holder)
WL ... Wafer loader WHL ... Wafer holder loader 10 ... Wafer stocker 20 ... Wafer pre-alignment device 30 ... Wafer holder stocker 40 ... Wafer holder pre-alignment device 50 ... Aligner 70 ... Heating and pressing device 73 ... Inside pressure actuator,
75 ... Outer pressure actuator 77 ... Temperature controller 78 ... Temperature prediction unit 80 ... Separation unit 85 ... Wafer stocker 70 ... Heating and pressurizing device 80 ... Separation cooling unit 90 ... Main controller 100 ... Wafer bonding device

Claims (11)

A heating and pressing system that heats and presses at least two substrates to process into an integrated substrate,
A pressure plate that supports and pressurizes the substrate;
A central heater part disposed in the pressure plate and for heating the central part of the substrate;
A peripheral heater part disposed in the pressure plate and for heating the peripheral part of the substrate;
Temperature control for controlling the central heater portion and the peripheral heater portion so that the temperature near the central portion and the temperature near the peripheral portion coincide with each other when the substrate is heated from the first temperature to the second temperature. And
A heating and pressurizing system comprising:   2. The heating according to claim 1, further comprising a heating unit that is disposed outside the pressure plate and heats a peripheral edge of the substrate when the substrate is heated from the first temperature to the second temperature. Pressurization system.   The heating and pressurizing system according to claim 2, wherein the heating means includes a radiant heat reflecting plate.   The heating and pressurizing system according to claim 2, wherein the heating unit includes a nozzle that blows an inert gas whose temperature is the second temperature to the peripheral edge of the substrate.   The temperature control unit is configured such that the central heater unit and the peripheral edge are based on a contact portion between constituent members from the substrate to the central heater portion or a peripheral heater portion and a contact thermal resistance existing in a contact portion between the constituent member and the substrate. The heating and pressurizing system according to any one of claims 1 to 4, wherein the heating unit is controlled. A central cooling part disposed in the pressure plate and cooling a central part of the substrate;
A peripheral cooling part arranged in the pressure plate and cooling the peripheral part of the substrate,
When the substrate is cooled from the second temperature to the first temperature, the temperature control unit includes the central cooling unit and the peripheral cooling unit so that the temperature in the vicinity of the central unit and the temperature in the vicinity of the peripheral unit coincide with each other. The heating and pressurizing system according to any one of claims 1 to 5, wherein the heating and pressurizing system is controlled. A heating and pressing system that heats and presses at least two substrates to process into an integrated substrate,
A pressure plate that supports and pressurizes the substrate;
A central cooling part disposed in the pressure plate and cooling a central part of the substrate;
A peripheral cooling part disposed in the pressure plate for cooling the peripheral part of the substrate;
Temperature control for controlling the central cooling portion and the peripheral cooling portion so that the temperature near the central portion and the temperature near the peripheral portion coincide with each other when the substrate is cooled from the second temperature to the first temperature. And
A heating and pressurizing system comprising:   The heating according to claim 7, further comprising a cooling unit that is disposed outside the pressure plate and cools a peripheral portion of the substrate when the substrate is cooled from the second temperature to the first temperature. Pressurization system.   The heating and pressurizing system according to claim 8, wherein the cooling means includes a nozzle that blows an inert gas whose temperature is the first temperature.   The temperature control unit is configured such that the central cooling unit and the peripheral edge are based on a contact part between constituent members from the substrate to the central cooling part or a peripheral cooling part and a contact thermal resistance existing in a contact part between the constituent member and the substrate. The heating and pressurizing system according to any one of claims 7 to 9, wherein the cooling unit is controlled. A central heater part disposed in the pressure plate and for heating the central part of the substrate;
A peripheral heater part disposed in the pressure plate and heating a peripheral part of the substrate;
When the substrate is heated from the first temperature to the second temperature, the temperature control unit is configured so that the temperature near the central portion and the temperature near the peripheral portion coincide with each other. The heating and pressurizing system according to any one of claims 7 to 10, wherein the heating and pressurizing system is controlled.