JP2009194633A - Solid-state image-sensing cell and photovoltaic device and apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a solid-state image-sensing cell capable of working as an image-sensing sensor while being able to accurately detect even a signal from an existing infrared remote controller. <P>SOLUTION: The solid-state image-sensing cell Sc has an optoelectric transducer (such as a photo-diode) PD1, an image-sensing element configuration circuit section Ma, and a selective gate (a switch section) G15. The image-sensing element configuration circuit section Ma configures a solid-state image sensing element together with the optoelectric transducer PD1. The image-sensing element configuration circuit section Ma is disposed between one output section of the optoelectric transducer PD1 and a gesture-signal transmission line (a first signal line) L1. The selective gate G15 conducts the changeover of an output to the gesture-signal transmission line L1 side or the output to the infrared-ray signal transmission line L2 side connected to the other output section of the optoelectric transducer PD1 of charges output from the output section of the optoelectric transducer PD1. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a solid-state imaging cell, a photovoltaic device, and a device. For example, the present invention can be applied to a device that can be controlled by an infrared remote controller and controlled based on a user's movement.

  An infrared remote controller is generally used as a remote controller for operating home appliances. In recent years, a method for operating home appliances using an image sensor and an image recognition function instead of operating home appliances using an infrared remote controller has been studied (for example, Non-Patent Document 1). In the said nonpatent literature 1, operation of household appliances is performed by making a human gesture recognized.

  In addition, in consideration of problems such as the recognition rate of human gestures and costs, home appliances that can be operated with both an infrared remote controller and human gestures (for convenience, this technique is referred to as a technique that allows both operations). Has also been developed. In the case of the both-operation-enabled technology, for example, only the most frequently used function (such as TV channel switching) is made to correspond to the gesture operation, and other operations are performed by the infrared remote controller.

  Moreover, in the above-described both operable techniques, a technique for receiving an infrared light signal of an infrared remote controller with an image sensor is required. For example, Patent Literature 1 to Patent Literature 6 exist as the technology.

http://techon.nikkeibp.co.jp/article/NEWS/20071002/140058/ JP-A-5-344401 JP-A-6-22194 JP 2004-222242 A JP 2006-238193 A JP 2006-279823 A JP 2006-303867 A

  In order to disseminate both of the above operable technologies, it is important that the both operable technologies can support the existing infrared remote control format. That is, it is necessary that the home appliance to which both the operable technologies are applied can be operated by a general infrared remote controller having a maximum carrier frequency of 40 KHz.

  However, when a CMOS (Complementary Metal Oxide Semiconductor) sensor element itself has a function of receiving light from an infrared remote controller, in order to accurately detect the 40 KHz carrier frequency, an imaging frame rate by the CMOS sensor is used. Needs to be a fairly large value (at least 80 KHz or more). Although it is possible to capture an image at a considerably large frame rate, in that case, the brightness of the captured image is reduced, causing a problem in sensitivity and the like. That is, in the case of the technology related to the CMOS sensor, the carrier frequency of the conventional remote control format cannot be supported due to the restriction of the frame rate.

  Usually, a 1-bit period (5 KHz) of the infrared remote controller is transmitted on the carrier frequency of 40 KHz. Here, from the viewpoint of control by the infrared remote controller, it is not necessary to recognize the carrier frequency up to 40 KHz, and it is sufficient if the 1-bit information (5 KHz) can be detected on the CMOS sensor side. Therefore, it is possible to recall a configuration in which the filter that transmits only the frequency of 40 KHz, which is normally arranged on the side receiving the signal from the infrared remote controller, is removed, and the imaging frame rate by the CMOS sensor is set to about 5 KHz.

  However, in the case of the configuration, the CMOS sensor detects optical noise other than the signal from the infrared remote controller due to the removal of the filter, and the influence of the noise becomes serious.

  As described above, when the CMOS sensor element itself has an infrared signal receiving function and the CMOS sensor is applied to the both operable technologies, there is a problem that compatibility with the existing infrared remote controller cannot be maintained. .

  Therefore, an object of the present invention is to provide a solid-state imaging cell and a photovoltaic device that can function as an imaging sensor and can also accurately detect a signal from an existing infrared remote controller, for example. It is another object of the present invention to provide a device that can handle both control by an existing infrared remote control operation and control by a gesture by a person.

  In order to achieve the above object, a solid-state imaging cell according to claim 1 according to the present invention constitutes a solid-state imaging device together with a photoelectric conversion element and the photoelectric conversion element, and one of the photoelectric conversion elements The image sensor constituting circuit unit disposed between the output unit and the first signal line, and the charge output from the output unit of the photoelectric conversion element is output to the first signal line side, or A switch unit capable of switching whether to output to the second signal line connected to the other output unit of the photoelectric conversion element.

  Moreover, the photovoltaic apparatus of Claim 2 which concerns on this invention comprises the solid-state image sensor with the photoelectric conversion element and the said photoelectric conversion element, One output part of the said photoelectric conversion element, and 1st An imaging element constituting circuit unit disposed between the signal line and the charge output from the photoelectric conversion element, or the other output unit of the photoelectric conversion element; A plurality of solid-state imaging cells having a switch unit that can switch whether to transmit to the connected second signal line side are provided.

  Further, the photovoltaic device according to claim 3 according to the present invention is the photovoltaic device according to claim 2 according to the present invention, wherein the imaging element constituting circuit unit is combined with the photoelectric conversion element, A CMOS sensor is configured.

  A photovoltaic device according to a fourth aspect of the present invention is the photovoltaic device according to the second or third aspect of the present invention, wherein any one of the plurality of solid-state imaging cells. The first cell group composed of the first cell group and the second cell group composed of the other of the plurality of solid-state imaging cells have a first mode, and the first mode In each of the solid-state imaging cells belonging to the cell group, the charge output from the photoelectric conversion element is transmitted to the first signal line side by switching the switch unit, and each of the solid-state imaging cells belonging to the second cell group In the solid-state imaging cell, the charge output from the photoelectric conversion element is transmitted to the second signal line side by switching the switch unit.

  The photovoltaic device according to claim 5 of the present invention is the photovoltaic device according to claim 4 according to the present invention, wherein the photovoltaic device is determined to satisfy a predetermined condition. In the second mode, all the solid-state imaging cells are transferred from the first mode to the first signal line by the switching of the switch unit. Migrate to

  The photovoltaic device according to a sixth aspect of the present invention is the photovoltaic device according to the fourth aspect of the present invention, wherein the plurality of solid-state imaging cells are arranged in a matrix. In the first mode, the solid-state imaging cells belonging to the first cell group and the solid-state imaging cells belonging to the second cell group are arranged in a checkered pattern. .

  Further, the photovoltaic device according to claim 7 according to the present invention is the photovoltaic device according to claim 5 according to the present invention, wherein when it is determined that the predetermined condition is satisfied, This is when it is determined that there is a periodic change in luminance in the imaging data obtained from the imaging results of each of the solid-state imaging cells belonging to the first cell group.

  The photovoltaic device according to claim 8 of the present invention is the photovoltaic device according to claim 2 or claim 3 according to the present invention, wherein the photoelectric device is included in all the solid-state imaging cells. The other output portions of the conversion elements are electrically connected in common by the second signal line.

  The photovoltaic device according to claim 9 according to the present invention is the photovoltaic device according to claim 2 according to the present invention, wherein the infrared signal from 800 nm to 980 nm and the infrared signal from 4 μm to 20 μm are provided. An infrared transmission filter that can transmit the light is further provided.

  A device according to a tenth aspect of the present invention is a device that can be remotely operated by an infrared remote controller, and the photovoltaic device according to any one of the second to ninth aspects and the photovoltaic device. And a control unit that performs operation control based on a control signal from the power device.

  The solid-state imaging cell according to claim 1 of the present invention constitutes a solid-state imaging device together with a photoelectric conversion element and the photoelectric conversion element, and is provided between one output portion of the photoelectric conversion element and the first signal line. The charge output from the image pickup element constituting circuit unit and the output unit of the photoelectric conversion element is output to the first signal line side or connected to the other output unit of the photoelectric conversion element. And a switch unit capable of switching whether to output to the signal line side. The photovoltaic device according to claim 2 includes a plurality of the solid-state imaging cells.

  Therefore, for example, an element specialized for an imaging function and an element specialized for another function can be provided in one solid-state imaging cell. Therefore, the solid-state imaging cell (photovoltaic device) can function as an imaging sensor, and can also function as a sensor that can accurately detect a signal from an existing infrared remote controller, for example.

  In the photovoltaic device according to the third aspect of the present invention, the imaging element constituting circuit unit constitutes a CMOS sensor together with the photoelectric conversion element.

  Therefore, it is possible to provide a photovoltaic device having excellent practicality.

  The photovoltaic device according to claim 4 according to the present invention includes a first cell group including some of the plurality of solid-state imaging cells, and the other of the plurality of solid-state imaging cells. In each solid-state imaging cell belonging to the first cell group, the charge output from the photoelectric conversion element is changed by switching the switch unit. In each solid-state imaging cell that is transmitted to the first signal line side and belongs to the second cell group, the charge output from the photoelectric conversion element is transmitted to the second signal line side by switching the switch unit. .

  Therefore, in the first mode that can be realized by a simple switch operation, the photovoltaic device can also function as, for example, a detection unit that detects a human gesture and a detection unit that detects a signal from, for example, an infrared remote controller. .

  Further, in the photovoltaic device according to claim 5 according to the present invention, when the photovoltaic device determines that the predetermined condition is satisfied, from the first mode, all the solid-state imaging cells are By switching, the electric charge output from the photoelectric conversion element shifts to the second mode in which the electric charge is transmitted to the first signal line.

  Therefore, all the solid-state imaging cells can be made specialized cells for the imaging sensor by a simple switch operation. Therefore, when a predetermined condition is satisfied, the mode can be shifted to the second mode in which higher-resolution imaging is possible than in the first mode.

  In the photovoltaic device according to claim 6 of the present invention, the plurality of solid-state imaging cells are arranged in a matrix, and each solid-state imaging belonging to the first cell group in the first mode. The cells and the solid-state imaging cells belonging to the second cell group are arranged in a checkered pattern.

  Therefore, even if an infrared signal, for example, is incident on any region of the photovoltaic device, the signal can be reliably detected without requiring a special member for guiding the infrared signal to a predetermined region.

  In the photovoltaic device according to claim 7 according to the present invention, when it is determined that the predetermined condition is satisfied, in the imaging data obtained from the imaging result of each solid-state imaging cell belonging to the first cell group When it is determined that there is a periodic change in luminance.

  A periodic change in luminance in the imaged data occurs mainly during a human gesture operation. Therefore, when a human gesture is detected, the optically activated power device can transition to the second mode with higher resolution.

  In the photovoltaic device according to claim 8 of the present invention, in all solid-state imaging cells, the other output portions of the photoelectric conversion elements are electrically connected in common by the second signal line. Has been.

  Therefore, for example, when some solid-state imaging cells are made to function for infrared detection, each of the several solid-state imaging cells is electrically connected by one branched second signal line. Therefore, for example, only one infrared light receiving module (such as gain adjustment or a carrier (40 KHz) band-pass filter) may be provided on the second signal line. This eliminates the need for an extra infrared receiving module, leading to cost reduction.

  The photovoltaic device according to claim 9 of the present invention further includes an infrared transmission filter capable of transmitting an infrared signal from 800 nm to 980 nm and an infrared signal from 4 μm to 20 μm.

  Therefore, only the infrared remote control signal and the infrared signal from the human body temperature can be detected, and the extra noise signal can be removed. Thereby, the detection sensitivity of various signals can be improved.

  The device according to claim 10 of the present invention is a device that can be remotely operated by an infrared remote controller, and the photovoltaic device according to any one of claims 2 to 9 and the photovoltaic device. And a control unit that performs operation control based on a control signal from the apparatus.

  Therefore, for example, it is possible to provide a device in which both control by an infrared remote controller and control by a human gesture are accurately executed.

  Hereinafter, the present invention will be specifically described with reference to the drawings showing embodiments thereof.

<Embodiment>
FIG. 1 shows a display device 100 which is an example of a device that can be remotely controlled by the infrared remote controller according to this embodiment.

  The display device 100 can be controlled by operating the infrared remote controller 10 and by a human gesture. The display device 100 includes a photovoltaic device 20 and a display unit 30.

  The infrared remote controller 10 modulates the control signal from the remote controller 10 to a carrier frequency of 40 KHz and transmits the same as, for example, the existing infrared remote controller. The photovoltaic device 20 can detect a signal from the infrared remote controller 10 and also has a function (gesture recognition function) as an imaging sensor. The display unit 30 can display an image such as a broadcast program corresponding to a predetermined channel.

  FIG. 2 is a functional block diagram showing the configuration of the photovoltaic device 20.

  As shown in FIG. 2, the photovoltaic device 20 includes a sensor unit 21, an infrared signal processing unit 22, a gesture signal processing unit 23, and an interface 24.

  The sensor unit 21 can image the external environment (more specifically, detect a human gesture) and can also detect a signal from the infrared remote controller 10.

  The infrared signal processing unit 22 performs a filtering process, a signal amplification process, a signal shaping process, and the like for transmitting only a predetermined frequency (for example, 40 KHz) with respect to the infrared signal from the infrared remote controller 10 detected by the sensor unit 21. Then, the signal after each processing is transferred to the interface 24 as a control signal.

  Based on the gesture signal detected by the sensor unit 21, the gesture signal processing unit 23 generates a control signal corresponding to the detected gesture signal. For example, it is assumed that a periodic motion is detected from a change in luminance in the captured image signal captured by the sensor unit 21. At this time, the gesture signal processing unit 23 generates a control signal for changing the channel station up or down based on a signal indicating the detection result. The gesture signal processing unit 23 can also generate a mode change control signal to be described later based on the received gesture signal. Each control signal described above is transferred to the interface 24.

  The interface 24 transmits the control signal generated by the infrared signal processing unit 22 and the control signal generated by the gesture signal processing unit 23 to a control unit (not shown) on the display device 100 side. The interface 24 also transmits a control signal for preventing the control by the gesture on the display device side to the control unit. Here, the control unit performs control such as channel change, power on / off or mode change described later, gesture control on / off based on the received control signal.

  FIG. 3 is a circuit diagram showing a detailed configuration of the sensor unit 21 of FIG.

  As shown in FIG. 3, the sensor unit 21 includes a plurality of solid-state imaging cells Sc arranged in a matrix. Each solid-state imaging cell Sc can be grasped as a gesture signal transmission line (which can be grasped as a first signal line) L1 through which a gesture signal is transmitted and an infrared signal transmission line (in which second infrared signal is transmitted) (a second signal line). ) It is electrically connected to L2. Specifically, in each solid-state imaging cell Sc, one output unit of the solid-state imaging cell Sc is connected to the gesture signal transmission line L1. On the other hand, the other output part of the solid-state imaging cell Sc is connected to the infrared signal transmission line L2.

  For each column, a column selection gate G1 is provided on the gesture signal transmission line L1. In addition, as shown in FIG. 3, no transistor corresponding to the column selection gate G1 is provided on each infrared signal transmission line L2, and all the infrared signal transmission lines L2 are electrically connected. It is connected to the. The gesture signal transmitted through the gesture signal transmission line L1 is output to the gesture signal processing unit 23 illustrated in FIG. On the other hand, the infrared signal transmitted through the infrared signal transmission line L2 is output to the infrared signal processing unit 22 shown in FIG.

  FIG. 4 is a circuit diagram showing an internal configuration of the solid-state imaging cell Sc shown in FIG.

  As shown in FIG. 4, each solid-state imaging cell Sc is configured by a photoelectric conversion element PD1, an imaging element configuration circuit unit Ma, and a selection gate (which can be grasped as a switch unit) G15. Here, the photoelectric conversion element PD1 is an element that converts light into electric energy. For example, an embedded photodiode or the like exists. In the following description, the photoelectric conversion element PD1 is assumed to be a photodiode PD1.

  The photodiode PD1 is a semiconductor element that uses the photovoltaic effect (in other words, converts light into electric charge). Specifically, when light is incident on the PN junction of the photodiode PD1, holes are collected in the P region and electrons are collected in the N region, and a voltage (or current) is generated. Using the voltage (or current), the photodiode PD1 is used as an optical sensor. In the photodiode PD1, a reverse bias is applied to extract a photocurrent.

  Further, as shown in FIG. 4, the output of the photodiode PD1 is branched at the node N1. Hereinafter, the output part of the photodiode PD1 located on the imaging element circuit part Ma (or gesture signal transmission line L1) side is referred to as one output part. On the other hand, the output part of the photodiode PD1 located on the selection gate G15 (or infrared signal transmission line L2) side is referred to as the other output part.

  The image sensor component circuit unit Ma is a circuit unit that forms a solid-state image sensor together with the photodiode PD1. For example, as shown in FIG. 4, a CMOS (Complementary Metal Oxide Semiconductor) sensor is configured by the photodiode PD <b> 1 and the imaging element configuration circuit unit Ma. Although different from FIG. 4, a CCD (Charge Coupled Device) sensor may be configured by the photodiode PD <b> 1 and the imaging element configuration circuit unit Ma.

  As shown in FIG. 4, the image sensor component circuit portion Ma is disposed between one output portion of the photodiode PD1 and the gesture signal transmission line L1.

  The image sensor configuration circuit unit Ma that constitutes the CMOS sensor includes a transfer gate G11, a reset gate G12, a floating diffusion gate G13, and a selection gate G14.

  The photodiode PD1 accumulates electric charges photoelectrically converted according to the exposure amount of light (including infrared rays) to the photodiode PD1. The transfer gate G11 can transfer the charge accumulated in the photodiode PD1 to the floating diffusion gate G13. The floating diffusion gate G13 can convert the charge photoelectrically converted by the photodiode PD1 and transferred via the transfer gate G11 into a voltage based on the fixed potential VDD. The selection gate G14 can transfer the voltage converted by the floating diffusion gate G13 to the gesture signal transmission line L1. The reset gate G12 can reset the charges of the floating diffusion gate G13 and the photodiode PD1 using the fixed potential VDD.

  An outline of the operation of the CMOS sensor will be described.

  First, both the reset gate G12 and the transfer gate G11 are turned on. Thereby, the charge accumulated in the photodiode PD1 and the charge transferred to the floating diffusion gate G13 can be reset. Next, both the reset gate G12 and the transfer gate G11 are turned off. As a result, charge starts to accumulate in the photodiode PD1 irradiated with light.

  When a predetermined time has elapsed from the start of charge accumulation in the photodiode PD1, the transfer gate G11 is turned on. Thereby, all the charges stored in the photodiode PD1 are completely transferred to the floating diffusion gate G13 via the transfer gate G11. Then, after the waiting time until reading elapses, the selection gate G14 is turned on. As a result, a voltage signal corresponding to the charge transferred to the floating diffusion gate G13 is output to the gesture signal transmission line L1.

  Next, the selection gate G15 will be described.

  As shown in FIG. 4, the selection gate G15 is disposed between the other output portion of the photodiode PD1 and the infrared signal transmission line L2. Whether the charge generated in the photodiode PD1 is output to the gesture signal transmission line L1 side (one output part side of the photodiode PD1) via the image pickup element configuration circuit unit Ma according to the switching state of the selection gate G15. It is possible to switch whether to output to the infrared signal transmission line L2 side (the other output side of the photodiode PD1).

  When the selection gate G15 is in the OFF state, the charge output from the output part of the photodiode PD1 (charge accumulated in the photodiode PD1) is transferred to the gesture signal transmission line L1 side through the image sensor component circuit part Ma. Is output.

  On the other hand, when the selection gate G15 is in the ON state, the charge output from the output part of the photodiode PD1 (charge generated in the photodiode PD1) is output to the infrared signal transmission line L2 side. That is, when the selection gate G15 is in the on state, the charge generated in the photodiode PD1 is transferred to the infrared signal transmission line L2.

  When the selection gate G15 is on, the transfer gate G11 is off.

  Therefore, when the selection gate G15 is in the off state, the solid-state imaging cell Sc is equivalent to the circuit shown in FIG. The solid-state imaging cell Sc in the equivalent circuit configuration shown in FIG. 5 is referred to as an imaging photodiode for convenience. Further, when the selection gate G15 is in the on state, the solid-state imaging cell Sc is equivalent to the circuit shown in FIG. For convenience, the solid-state imaging cell Sc having the equivalent circuit configuration shown in FIG. 6 is referred to as a remote control photodiode.

  By the way, the photovoltaic device 20 has an idling mode (which can be grasped as the first mode) and a detailed detection mode (which can be grasped as the second mode). Can be switched.

  The idling mode is a mode in which the first cell group and the second cell group are mixed in the sensor unit 21.

  Here, the first cell group is composed of some of the plurality of solid-state imaging cells Sc arranged in a matrix, and each solid-state imaging cell Sc belonging to the first cell group includes: The equivalent circuit configuration shown in FIG. 5 is provided. That is, in each solid-state imaging cell Sc belonging to the first cell group, the selection gate G15 is in an OFF state, and the charge output from the photodiode PD1 is on the imaging element component circuit unit side (gesture signal transmission line L1 side). Is transmitted.

  The second cell group is configured by other than the solid-state imaging cell Sc belonging to the first cell group. Therefore, each solid-state imaging cell Sc belonging to the second cell group has an equivalent circuit configuration shown in FIG. That is, in each solid-state imaging cell Sc belonging to the second cell group, the selection gate G15 is in an on state, and the charge output from the photodiode PD1 is transmitted to the infrared signal transmission line L2 side.

  An example of the configuration in the idling mode in which the first cell group and the second cell group are mixed in the sensor unit 21 is shown in FIG. In FIG. 7, hatched solid-state imaging cells Sc (cells having the equivalent circuit configuration of FIG. 5) are cells belonging to the first cell group. In FIG. 7, the solid-state imaging cell Sc (cell having the equivalent circuit configuration of FIG. 6) in the sand is a cell belonging to the second cell group. In the example of FIG. 7, in the idling mode, each solid-state imaging cell Sc (cell having the equivalent circuit configuration of FIG. 5) belonging to the first cell group and each solid-state imaging cell Sc (FIG. 6) belonging to the second cell group. The cells having the equivalent circuit configuration are arranged in a checkered pattern.

  A circuit configuration equivalent to the circuit configuration of FIG. 7 is shown in FIG. In FIG. 8, the hatched solid-state imaging cell Sc) is a cell belonging to the first cell group, and the sandy solid-state imaging cell Sc is a cell belonging to the second cell group. As shown in FIGS. 7 and 8 and as described above, in all the solid-state imaging cells Sc, the other output parts of the photodiodes PD1 are electrically connected in common by the infrared signal transmission line L2. Yes.

  When the photovoltaic device 20 determines that the predetermined condition is satisfied, the process shifts from the idling mode to the detailed detection mode.

  The detailed detection mode is a case in the sensor unit 21 where all the solid-state imaging cells Sc belong to the first cell group. That is, in the detailed detection mode, all the solid-state imaging cells Sc have the equivalent circuit configuration shown in FIG. Therefore, in the detailed detection mode, in all the solid-state imaging cells Sc, the selection gate G15 is in an off state, and the charge output from the photodiode PD1 is transmitted to the imaging element constituent circuit unit side (gesture signal transmission line L1 side). Is done.

  FIG. 9 shows a configuration in the detailed detection mode in which all the solid-state imaging cells Sc belong to the first cell group in the sensor unit 21. In FIG. 9, the hatched solid-state imaging cell Sc (cell having the equivalent circuit configuration of FIG. 5) is a cell belonging to the first cell group.

  FIG. 10 shows a circuit configuration equivalent to the circuit configuration of FIG. In FIG. 10, hatched solid-state imaging cells Sc are cells belonging to the first cell group.

  Further, as the predetermined condition, for example, a periodic change in luminance in the imaging data obtained from the imaging result of each solid-state imaging cell Sc belonging to the first cell group can be employed in the idling mode. Note that the display device 100 may be configured to manually shift from the idling mode to the detailed detection mode.

  Next, the transition operation from the idling mode to the detailed detection mode will be described based on the flowchart shown in FIG.

  The display device 100 is in an idling mode (step S1). In the idling mode, the circuit configuration shown in FIGS. That is, the solid-state imaging cell Sc belonging to the first cell group detects a user's gesture, and the solid-state imaging cell Sc belonging to the second cell group detects an infrared signal from the infrared remote controller 10. The gesture signal detected by the solid-state imaging cell Sc belonging to the first cell group is transmitted to the gesture signal processing unit 23 via the gesture signal transmission line L1, and the solid-state imaging cell Sc belonging to the second cell group. The infrared signal detected by is transmitted to the infrared signal processing unit 22 via the infrared signal transmission line L2. In each processing unit 22, 23, each signal is subjected to predetermined processing, and then a control signal corresponding to each signal is transmitted from the interface 24 to the control unit of the display device 100. Therefore, in the idling mode, the display device 100 performs detection of a user's gesture and detection of an infrared signal from the infrared remote controller 10 (can also be grasped as control based on the infrared signal).

  Next, it is determined whether or not the display device 100 has detected a predetermined condition (step S2). For example, in the captured image (imaging data) captured by the solid-state imaging cell Sc belonging to the first cell group, it is determined whether or not a luminance change is periodically detected by a user's gesture (step S2). The determination in step S2 is performed in the gesture signal processing unit 23, for example.

  When the display device 100 does not detect the predetermined condition (“No” in step S2), the determination in step S2 is repeatedly executed. On the other hand, when the display device 100 detects a predetermined condition (“Yes” in step S2), the process shifts from the idling mode to the detailed detection mode (step S3). For example, the gesture signal processing unit 23 that has detected the predetermined condition generates a control signal that is a mode change command and transmits the control signal to the control unit on the display device 100 side via the interface 24. The control unit that has received the control signal performs control to turn off the selection gate G15 in all the solid-state imaging cells Sc that constitute the sensor unit 21. That is, under the control of the control unit, the sensor unit 21 is shifted from the configuration illustrated in FIGS. 7 and 8 to the configuration illustrated in FIGS.

  As can be seen from the comparison between FIG. 8 and FIG. 10, in the detailed detection mode, all the solid-state imaging cells Sc are imaging photodiodes. Therefore, the imaging resolution in the detailed detection mode is higher than the imaging resolution in the idling mode. Also gets higher. For example, comparing FIGS. 8 and 10, by switching from the first mode to the second mode, the resolution required for image recognition is improved by about twice without increasing the die size of the sensor unit 21. be able to. Therefore, in the detailed detection mode, the sensor unit 21 can detect a more detailed gesture of the user.

  Next, a predetermined operation of the display device 100 is controlled based on the gesture detected by the sensor unit 21 in the detailed detection mode state (step S4).

  For example, in the detailed detection mode, it is assumed that the gesture signal processing unit 23 detects a periodic movement from a change in luminance in a captured image signal (captured data) captured by the sensor unit 21. At this time, based on the detection result, the gesture signal processing unit 23 generates a control signal that changes the channel station in the direction of up or down.

  Thereafter, each control signal described above is transferred to the control unit of the display device 100 via the interface 24. The control unit that has received the control signal performs control to change the channel of the display device 100 based on the received control signal.

  Next, the gesture signal processing unit 23 determines whether or not the gesture has ended based on a change in luminance in the captured image signal (imaging data) captured by the sensor unit 21 in the detailed detection mode (step S5).

  When it is determined that the gesture has not ended (“No” in step S5), the display device 100 continues the process of step S4.

  On the other hand, when it is determined that the gesture has ended (“Yes” in step S5), the process returns from the detailed detection mode to the idling mode (step S6). For example, the gesture signal processing unit 23 that has detected the end of the gesture generates a control signal that is a mode change command and transmits the control signal to the control unit on the display device 100 side via the interface 24. The control unit that has received the control signal performs control to turn on the selection gate G15 for a predetermined solid-state imaging cell among the solid-state imaging cells Sc constituting the sensor unit 21. That is, under the control of the control unit, the sensor unit 21 is shifted from the configuration illustrated in FIGS. 9 and 10 to the configuration illustrated in FIGS. As described above, the display device 100 in the idling mode can detect a person's gesture or an infrared signal from the infrared remote controller 10. In the idling mode, the display device 100 can be controlled based on the operation of the infrared remote controller 10 as described above.

  As described above, the solid-state imaging cell Sc according to the present embodiment includes the imaging element configuration circuit unit Ma and the selection gate G15 that can be grasped as a switch unit, as shown in FIG. Here, the selection gate G15 can switch whether to output the charge output from the output portion of the photodiode PD1 to the gesture signal transmission line L1 side or to the infrared signal transmission line L2 side. The photovoltaic device 20 is configured by providing a plurality of the solid-state imaging cells Sc.

  Therefore, an element specialized for the imaging function and an element specialized for other functions (infrared detection function) can be provided in one solid-state imaging cell Sc. Therefore, the solid-state imaging cell Sc (photovoltaic device 20) can function as an imaging sensor and can also function as a sensor that can accurately detect an infrared signal from the existing infrared remote controller 10.

  Further, the imaging element configuration circuit unit Ma forms a CMOS sensor together with the photodiode PD1 (see FIG. 4). Therefore, it is possible to provide a photovoltaic device having a simple circuit configuration and low cost and excellent in practicality.

  The photovoltaic device 20 has a first mode. In each solid-state imaging cell Sc belonging to the first cell group, the charge output from the photodiode PD1 is transmitted to the gesture signal transmission line L1, and in each solid-state imaging cell Sc belonging to the second cell group, The charges output from the photodiode PD1 are transmitted to the infrared signal transmission line L2 side.

  Therefore, in the first mode that can be realized by a simple switch operation of the selection gate G15, the photovoltaic device 20 is, for example, a detection unit that detects a human gesture and a detection unit that detects a signal from the infrared remote controller 10, for example. Can also work.

  Further, when the photovoltaic device 20 determines that the predetermined condition is satisfied, the mode is shifted to the second mode. Therefore, all the solid-state imaging cells Sc can function as cells specialized for the imaging sensor by a simple switching operation of the selection gate G15. Therefore, when a predetermined condition is satisfied, the mode can be shifted to the second mode in which higher-resolution imaging is possible than in the first mode.

  In the photovoltaic device 20, the plurality of solid-state imaging cells Sc are arranged in a matrix. In the first mode, the solid-state imaging cells Sc belonging to the first cell group and the second cells The solid-state imaging cells Sc belonging to the group are arranged in a checkered pattern (see FIGS. 7 and 8).

  Therefore, even if an infrared signal is incident on any region of the photovoltaic device 20 (specifically, the sensor unit 20), it is ensured that a special member for guiding the infrared signal to a predetermined region is not required. Infrared signals can be detected.

  In addition, when the photovoltaic device 20 determines that the predetermined condition is satisfied, the luminance periodicity in the imaging data obtained from the imaging results of the solid-state imaging cells Sc belonging to the first cell group is described. When it is judged that there is a change.

  A periodic change in luminance in the imaged data occurs mainly during a human gesture operation. Therefore, by setting the predetermined condition as described above, the light activation power device 20 can shift to the second mode of higher resolution when a human gesture is detected.

  Further, as shown in FIG. 3 and the like, in the photovoltaic device 20, in all the solid-state imaging cells Sc, the other output portions of the photodiodes PD1 are electrically connected in common by the infrared signal transmission line L2. Has been.

  Therefore, for example, when some solid-state imaging cells Sc function for infrared signal detection, a set of infrared light receiving signal preprocessing circuits as shown in FIG. 12 is provided in the infrared signal transmission line L2 in the first mode. (A gain adjustment amplifier Ap, a carrier (40 KHz) band-pass filter Ft, etc.) can be provided. In the configuration of FIG. 12, the signal from the infrared remote controller 10 output from the gain adjustment amplifier Ap is subsequently decoded.

  Further, in order to reduce the influence of noise caused by visible light on the signal from the infrared remote controller 10, a near infrared transmission filter capable of transmitting infrared wavelengths of 800 nm to 980 nm used in a general infrared remote controller is provided. It may be arranged only on the front surface of the second cell group.

  Although not shown in the drawings, if the photoelectric conversion element has sensitivity to an infrared wavelength of 800 nm to 980 nm used in a general infrared remote controller and an infrared wavelength of 4 μm to 20 μm generated from a human body temperature, the photoelectric conversion element has a wavelength of 800 nm to 980 nm. And an infrared transmission filter capable of transmitting infrared signals from 4 μm to 20 μm may be provided on the entire front surface of the photovoltaic device 20 described above.

  By providing the infrared transmission filter, only the signal of the infrared remote controller 10 and the infrared signal from the human body temperature can be extracted before the signal decoding process, and an extra noise signal can be removed. Thereby, the detection sensitivity of various signals can be improved.

  A display including the photovoltaic device 20 described above, a control unit that performs control based on various control signals transmitted from the photovoltaic device 20 through the interface 24, and a display unit 30 that displays an image. The apparatus 100 is configured.

  Thereby, it is possible to provide the display device 100 in which both the control by the infrared remote controller 10 and the control by the human gesture are accurately executed.

  That is, each solid-state imaging cell Sc constituting the sensor unit 21 incorporated in the display device 100 can function as an imaging photodiode as well as a remote control photodiode in accordance with switching of the selection gate G15. Therefore, the configuration of the entire display device 100 can be simplified and the cost can be reduced by taking the upper compatibility form of the existing system.

  In the first mode, the solid-state imaging cells Sc functioning as the remote control photodiode may be grouped into several groups. For example, in order to detect the direction of a signal transmitted from the infrared remote controller 10 using the solid-state imaging cell Sc belonging to the first group for assisting gesture recognition, and the solid-state imaging cell Sc belonging to the second group. It is also possible to adopt a form utilized for

  For example, it is possible to adopt a configuration in which various detectors that perform backend processing are arranged for each group. It should be noted that a time-division processing device that performs one high-speed readable serial conversion process may be provided in common for each group.

  The reading speed of the signal detected in the solid-state imaging cell Sc functioning as the remote control photodiode is set to be higher or lower than the reading speed of the signal detected in the solid-state imaging cell Sc functioning as the imaging photodiode. Is also possible. Therefore, the grouped groups can be selectively used as necessary, such as a motion detection algorithm and a sensitivity compensation algorithm.

  In addition, in order to increase the sensitivity and accuracy with respect to the signal from the infrared remote controller 10, the information from the first cell group and the information from the second cell group are processed in combination, and the detection accuracy of the infrared remote controller May be increased.

It is a figure which shows the whole structure of the display apparatus 100 which concerns on this invention. It is a block diagram which shows the structure of a photovoltaic apparatus. It is a figure which shows the structure of a sensor part. It is a block diagram which shows the structure of a solid-state imaging cell. It is a circuit diagram which shows a structure in case the solid-state imaging cell Sc functions as an imaging photodiode. It is a circuit diagram which shows a structure in case the solid-state imaging cell Sc functions as a photodiode for remote control. It is a figure which shows the structure of the sensor part at the time of 1st mode. It is an equivalent view of the configuration of the sensor unit in the first mode. It is a figure which shows the structure of the sensor part at the time of a 2nd mode. It is an equivalent view of the configuration of the sensor unit in the second mode. It is a flowchart which shows the flow of mode transfer. It is a figure which shows a mode that a filter and amplifier are arrange | positioned by the gesture signal transmission line.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Infrared remote control 20 Photovoltaic apparatus 21 Sensor part 22 Infrared signal processing part 23 Gesture signal processing part 24 Interface 30 Display part 100 Display apparatus Sc Solid-state imaging cell L1 Gesture signal transmission line L2 Infrared signal transmission line PD1 Photoelectric conversion element (photodiode) )
Ma Image sensor component circuit part G15 selection gate

Claims (10)

A photoelectric conversion element;
A solid-state imaging device is configured together with the photoelectric conversion device, and an imaging device configuration circuit unit disposed between one output unit of the photoelectric conversion device and a first signal line,
Whether the charge output from the output portion of the photoelectric conversion element is output to the first signal line side or to the second signal line side connected to the other output portion of the photoelectric conversion element A switch unit capable of switching,
A solid-state imaging cell. A photoelectric conversion element;
A solid-state imaging device is configured together with the photoelectric conversion device, and an imaging device configuration circuit unit disposed between one output unit of the photoelectric conversion device and a first signal line,
Switches between transferring the charge output from the photoelectric conversion element to the first signal line side or to the second signal line side connected to the other output part of the photoelectric conversion element. Having a switch part,
A plurality of solid-state imaging cells;
A photovoltaic device characterized by that. The imaging element constituting circuit unit is
It constitutes a CMOS sensor together with the photoelectric conversion element,
The photovoltaic device according to claim 2. A first mode in which a first cell group composed of some of the plurality of solid-state imaging cells and a second cell group composed of the other of the plurality of solid-state imaging cells are mixed Have
In each of the solid-state imaging cells belonging to the first cell group,
By switching the switch unit, the electric charge output from the photoelectric conversion element is transmitted to the first signal line side,
In each of the solid-state imaging cells belonging to the second cell group,
By switching the switch unit, the electric charge output from the photoelectric conversion element is transmitted to the second signal line side.
The photovoltaic device according to claim 2 or claim 3, wherein When it is determined that the photovoltaic device satisfies a predetermined condition,
From the first mode,
In all the solid-state imaging cells, by switching the switch unit, the electric charge output from the photoelectric conversion element is transmitted to the first signal line, and a transition is made to the second mode.
The photovoltaic device according to claim 4. The plurality of solid-state imaging cells are
Arranged in a matrix,
In the first mode,
Each of the solid-state imaging cells belonging to the first cell group and each of the solid-state imaging cells belonging to the second cell group are arranged in a checkered pattern,
The photovoltaic device according to claim 4. When it is determined that the predetermined condition is satisfied,
When it is determined that there is a periodic change in luminance in imaging data obtained from imaging results by each of the solid-state imaging cells belonging to the first cell group,
The photovoltaic device according to claim 5. In all the solid-state imaging cells, the other output parts of the photoelectric conversion elements are
Commonly electrically connected by the second signal line,
The photovoltaic device according to claim 2 or claim 3, wherein An infrared transmission filter capable of transmitting an infrared signal from 800 nm to 980 nm and an infrared signal from 4 μm to 20 μm;
The photovoltaic device according to claim 2. A device that can be operated remotely with an infrared remote control,
A photovoltaic device according to any one of claims 2 to 9,
A control unit that performs operation control based on a control signal from the photovoltaic device,
Equipment characterized by that.

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