JP2009194355A - Semiconductor device, and display - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that enables quality/manufacturing process control by enabling an observation of a state of the semiconductor device via an insulating film. <P>SOLUTION: A COF 10 includes a radiator 7 on a back surface of the insulating film 1, and the radiator 7 has openings o1 and o2 that are holes penetrating to the insulating film 1 to enable an observation of a state of the COF 10 on a front surface of the insulating film 1 via the insulating film 1. Wiring 2 on the front surface of the insulating film 1 is not arranged in positions corresponding to the openings o1 and o2. The openings o1 and o2 enable an observation of a state of the COF 10 via the insulating film 1 to enable quality/manufacturing process control of the COF 10. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor device as a COF (Chip On Film) and a display device including the semiconductor device, and more particularly to a semiconductor device capable of quality / manufacturing process management by observing from the back surface of the COF and a display device including the semiconductor device.

  Conventionally, as a heat dissipation measure for the heat released by the semiconductor element in the COF, on the surface opposite to the surface on which the semiconductor element is mounted on the insulating film of the COF, or on the entire surface corresponding to the position where the semiconductor element is mounted. In particular, a technique for providing a metallic heat dissipation material has been devised (see Patent Document 1). Hereinafter, COF using this technique will be briefly described with reference to FIG.

A COF 110 as a COF using the above technique includes an insulating film (specifically made of polyimide) 101, a wiring 102 provided on one surface of the insulating film 101, an insulating film 101, and a wiring as shown in the figure. And a solder resist 103 provided so as to cover a part of the bump 102. A bump electrode 104 a provided on the semiconductor element 104 is joined to the wiring 102. Further, the COF 110 is filled around the semiconductor element 104 to fix the semiconductor element 104 to the insulating film 101 and protect it from the outside, and a surface (back surface) opposite to the one surface of the insulating film 101. ) Provided with a heat dissipating material 107 (specifically, plate-shaped and made of copper). Since the COF 110 includes the heat dissipation material 107, the heat dissipation of the heat released by the semiconductor element 104 can be improved.
JP 2006-108356 A (published April 20, 2006)

  In the COF, for the purpose of quality control and manufacturing process control, after manufacturing, for example, (1) the bump electrode 104a of the semiconductor element 104 and the wiring 102 are joined without misalignment from the back surface of the transparent insulating film. Check the bonding quality and (2) whether the sealing resin is properly filled. However, in the COF 110, since the heat dissipation material 107 is provided on the insulating film 101, there arises a problem that the above confirmation cannot be performed.

  The present invention has been made in view of the above problems, and a semiconductor device capable of observing the state of a semiconductor device through an insulating film and capable of quality / manufacturing process management, and a display device including the same It is to provide.

  In this specification, when the member in the semiconductor device according to the present invention is rectangular, the long side direction is “horizontal” and the short side direction is “vertical”.

  In order to solve the above problems, a semiconductor device according to the present invention includes an insulating film, a wiring provided on one surface of the insulating film, a semiconductor element joined to the wiring, and a vicinity of the semiconductor element. In a semiconductor device including a filled sealing resin and a heat dissipating member provided on a surface opposite to one surface of the insulating film, the heat dissipating member is provided as a first heat dissipating member, and the first heat dissipating member is provided. The member is a hole that penetrates to the insulating film, and has an opening through which the state of the semiconductor device on one surface of the insulating film can be observed through the insulating film, and the wiring is the opening It is characterized by not being provided at a position corresponding to.

  According to said structure, the semiconductor device which concerns on this invention is a hole which penetrates to a 1st heat radiating member to an insulating film, and observes the state of the semiconductor device in one surface of the said insulating film through the said insulating film An opening is provided that allows this to be done. Through this opening, the state of the semiconductor device, for example, the state of the sealing resin, can be observed through the insulating film, and thus the quality and manufacturing process management of the semiconductor device can be performed. As described above, it is possible to provide a semiconductor device capable of observing the state of the semiconductor device through the insulating film and capable of quality / manufacturing process management.

  In the semiconductor device according to the present invention, the opening is located at a position corresponding to a central portion of the semiconductor element in the first heat dissipation member as a first opening, and the semiconductor element in the first heat dissipation member as a second opening. It is preferable to be provided at a position corresponding to the alignment mark portion or at both positions.

  According to said structure, it can confirm whether (2) sealing resin is filled appropriately by the 1st opening part, (1) The said semiconductor element is arrange | positioned appropriately by the 2nd opening part. It can be confirmed.

  In the semiconductor device according to the present invention, the second opening or the first opening and the second opening are provided as the opening, and the second opening on one surface of the insulating film is provided. A dummy wiring that is formed in the same layer as the wiring using the same mask and is not electrically connected to the wiring is provided at a position facing the portion, and the dummy wiring is connected to the second opening. It is preferable to use it for confirming the positional relationship between the dummy wiring and the alignment mark of the semiconductor element via a section.

  According to the above configuration, the dummy wiring formed using the same mask in the same layer as the wiring has the positional relationship between the dummy wiring and the alignment mark of the semiconductor element from the second opening. By confirming that the semiconductor element and the wiring are arranged so as to be joined without displacement (above (1)), confirming the alignment mark from the second opening, It has a function that can be confirmed with higher accuracy.

  In the semiconductor device according to the present invention, the first opening has a vertical width of −0.1 mm or less of the semiconductor element, a horizontal width of the semiconductor element of −0.1 mm or less, The second opening preferably has a vertical width of 0.05 mm or more and 0.15 mm or less, and a horizontal width of 0.05 mm or more and 0.15 mm or less.

  In the semiconductor device according to the present invention, it is preferable that a slit is provided in the first heat dissipation member.

  According to said structure, the slit is provided in the said 1st heat radiating member. With this slit, the thermal expansion of the first heat radiating member can be hindered and alleviated, and the deformation or disconnection of the wiring that has conventionally occurred due to the thermal expansion of the heat radiating member can be prevented. As described above, a semiconductor device that prevents deformation or disconnection of a wiring can be provided. Specifically, for example, when the first heat radiating member is a heat radiating material such as the rectangular heat radiating material 107 described above, the slit is provided in the long side direction of the heat radiating material because of its function. .

  In the semiconductor device according to the present invention, the slit may be provided at a position corresponding to the semiconductor element and the periphery thereof in the first heat dissipation member so as to be axisymmetric with respect to the center line of the semiconductor element. preferable.

  According to said structure, since the said slit is provided near the said semiconductor element, a thermal expansion can be relieve | moderated reliably, Therefore, a deformation | transformation or disconnection of wiring can be prevented reliably.

  In the semiconductor device according to the present invention, it is preferable that the first heat radiating member is provided only at a position corresponding to the semiconductor element and its periphery on the opposite surface of the insulating film.

  According to said structure, the heat dissipation of the said semiconductor device can be improved, without impairing the bendability at the time of bending and mounting the said semiconductor device.

  The semiconductor device according to the present invention further includes a second heat radiating member in contact with the first heat radiating member around the first heat radiating member, and the second heat radiating member has a square shape or a circular shape. It is preferable to have a plurality of openings that are holes penetrating to the film, and the openings are arranged vertically and horizontally while maintaining a certain distance from the adjacent openings.

  Specifically, the square-shaped opening of the second heat radiating member has one side of 50 μm to 200 μm and is arranged at a distance of 50 μm to 200 μm from the adjacent opening, It is preferable that the circular openings of the member have a diameter of 50 μm or more and 200 μm or less and are arranged with a distance of 50 μm or more and 200 μm or less from the adjacent openings.

  Further, the square-shaped openings of the second heat radiating member are arranged so that one side thereof is parallel to a line segment having an angle of 35 ° or more and 55 ° or less with the lateral side of the second heat radiating member. The circular opening of the second heat radiating member is preferably arranged at a position where the square opening is provided.

  According to said structure, since the area | region of a heat radiating member can be increased compared with the case where it is only the said 1st heat radiating member, the heat dissipation of the said semiconductor device can be improved more. Moreover, since the 2nd heat radiating member has an opening part and the heat radiating member is not generally provided, it is easy to bend. That is, according to said structure, the heat dissipation of the said semiconductor device can be improved more, ensuring a bendability.

  Further, by arranging the openings of the second heat radiating member with the above-described angles, elongation due to thermal expansion can be suppressed.

  The semiconductor device according to the present invention further includes a resist provided so as to cover the insulating film and a part of the wiring, and the second heat radiating member has the same lateral width as that of the first heat radiating member. The position of each end in the vertical direction is preferably set 0.5 mm or more inside from the position corresponding to the end of the resist on the opposite surface of the insulating film.

  In the semiconductor device according to the present invention, the first heat radiating member has a vertical width of −0.5 mm or more in a bending prohibited range when the semiconductor device is bent and used, and a vertical width +0. It is preferable to set between 5 mm or less.

  According to said structure, since the vertical width of said 1st heat radiating member is made into a substantially bending prohibition range, bendability can be ensured to the maximum, maintaining the heat dissipation of the said semiconductor device.

  In the semiconductor device according to the present invention, it is preferable that the width of the first heat radiating member is set at an interval of 0.5 mm or more from both lateral ends of the punched portion of the semiconductor device.

  According to said structure, the heat dissipation of the said semiconductor device can be improved, without causing trouble at the time of mounting.

  In the semiconductor device according to the present invention, the slit has a first slit parallel to one side of the semiconductor element, and the bump slit is located on one side of the semiconductor element closest to the first slit and the first slit. The distance in the horizontal direction is preferably 0.1 mm or more and 2.0 mm or less.

  According to the above configuration, the first slit is provided so as to cross the expansion path of the heat radiating member. Therefore, the first slit is very effective for mitigating thermal expansion. Can be relaxed. Therefore, it is possible to more reliably prevent the wiring from being deformed or disconnected.

  In the semiconductor device according to the present invention, it is preferable that the first heat radiating member or each heat radiating member is formed of a material having a thermal conductivity of 10 W / (m · K) or more.

  In the semiconductor device according to the present invention, it is preferable that the first heat radiating member or each heat radiating member is formed of copper, aluminum, or SUS.

  According to said structure, since the said 1st heat radiating member and said 2nd heat radiating member are formed with a material with high heat conductivity, the outstanding heat dissipation can be achieved.

  In the semiconductor device according to the present invention, it is preferable that the first heat radiating member or each heat radiating member has a thickness of 5 μm or more and 30 μm or less.

  According to said structure, heat dissipation can be improved, maintaining the thinness of the said semiconductor device.

  In the semiconductor device according to the present invention, it is preferable that a material different from the heat dissipation member is plated or coated on the surface of the first heat dissipation member or each of the heat dissipation members.

  Since the heat dissipating member is exclusively made of metal, oxidation may occur. According to said structure, the oxidation of the said heat radiating member can be prevented.

  In the semiconductor device according to the present invention, the width of the slit provided in the first heat dissipation member is preferably 0.02 mm or more and 1.0 mm or less.

  According to said structure, the said slit can be formed small and it can prevent the deformation | transformation or disconnection of wiring, without impairing the heat dissipation of the said semiconductor device.

  In the semiconductor device according to the present invention, it is preferable that the vertical distance between the semiconductor element and each of the heat dissipating members is 0.1 mm or less.

  According to said structure, since the said semiconductor device can be reduced in thickness and each said heat radiating member can be provided near a heat source, the heat dissipation of the said semiconductor device can be improved.

  A display device according to the present invention includes the semiconductor device as a display device driving module for driving the display device.

  According to said structure, since the display apparatus which concerns on this invention is equipped with the said semiconductor device which can perform quality and manufacturing process management as a display apparatus drive module for driving a display apparatus, it is high in the operation | movement, for example Reliability can be secured.

  A semiconductor device according to the present invention includes an insulating film, a wiring provided on one surface of the insulating film, a semiconductor element bonded to the wiring, a sealing resin filled in the vicinity of the semiconductor element, A semiconductor device comprising a heat radiating member provided on a surface opposite to the one surface of the insulating film, wherein the heat radiating member is provided as a first heat radiating member, and the first heat radiating member penetrates to the insulating film. An opening that allows the state of the semiconductor device on one surface of the insulating film to be observed through the insulating film, and the wiring is provided at a position corresponding to the opening. It is characterized by not.

  According to said structure, the semiconductor device which concerns on this invention can observe the state of a semiconductor device, for example, the state of sealing resin, etc. through the said insulating film by the said opening part, Therefore, the said semiconductor Can manage equipment quality and manufacturing process. As described above, it is possible to provide a semiconductor device capable of observing the state of the semiconductor device through the insulating film and capable of quality / manufacturing process management.

  In addition, a display device according to the present invention includes the semiconductor device as a display device driving module for driving the display device.

  According to said structure, since the display apparatus which concerns on this invention is equipped with the said semiconductor device which can perform quality and manufacturing process management as a display apparatus drive module for driving a display apparatus, it is high in the operation | movement, for example Reliability can be secured.

  In this specification, when the member in the semiconductor device according to the present invention is rectangular, the long side direction is “horizontal” and the short side direction is “vertical”.

Embodiment 1
An embodiment of the present invention will be described below with reference to FIGS.

  FIG. 1 shows a COF (semiconductor device) 10 according to this embodiment, FIG. 1 (a) shows the back surface thereof, and FIG. 1 (b) shows “a” in FIG. 1 (a). The area is shown enlarged.

  The COF 10 has the same configuration as the COF 110 shown in FIG. 7A, and includes an insulating film 1 having a sprocket hole 1a used when mounting a semiconductor element or the like, and a wiring 2 provided on one surface of the insulating film 1. (Not shown) and a solder resist 3 (not shown) provided so as to cover a part of the insulating film 1 and the wiring 2, and the semiconductor element 4 having the bump electrode 4a is interposed through the bump electrode 4a. Joined to the wiring 2. Further, the COF 10 is filled in the vicinity of the semiconductor element 4 to fix the semiconductor element 4 to the insulating film 1 and protect it from the outside, and is opposite to the one surface of the insulating film 1. And a heat dissipating material (first heat dissipating member) 7 provided on the surface (back surface). In the COF 10, by providing the heat dissipation material 7, it is possible to improve the heat dissipation of the heat released by the semiconductor element 4. The semiconductor element 4 is formed with alignment marks for confirming whether the wiring 2 and the semiconductor element 4 are joined without misalignment at four corners of the surface on which the bump electrode 4a is formed. Yes.

  FIG. 2 shows a partial configuration of the display device 30 on which the COF 10 is mounted. The display device 30 is a general liquid crystal display device and will not be described in detail.

  The display device 30 includes a display panel 15, a backlight device 20, and a COF 10 as a display device driving module for performing display on the display panel 15. As illustrated, the COF 10 is bent and mounted. Although details will be described later, the COF 10 can prevent the wiring 2 from being deformed or disconnected. In the display device 30, since the display device driving circuit is configured by the COF 10 having the above effects, high reliability can be ensured in its operation. In particular, when the display panel 15 is a large panel with high functionality and multiple outputs, the effect of ensuring the above-described high reliability becomes remarkable. The display device 30 is not limited to a liquid crystal display device, and may be a display device using organic EL, for example.

  Hereinafter, although the detail of COF10 is demonstrated, the insulating film 1, the wiring 2, the soldering resist 3, and the sealing resin 6 are formed with the material generally known conventionally (polyimide about the insulating film 1), and a formation method. Therefore, the description is omitted here, and the heat radiating material 7 will be mainly described.

  The heat dissipation material 7 is preferably plate-shaped, and is formed of a material having a high thermal conductivity in order to achieve excellent heat dissipation. Specifically, it is preferably formed of a material having a thermal conductivity of 10 W / (m · K) or more. In other words, it is preferably formed of copper, aluminum, or SUS (stainless steel). The forming method is general sputtering or the like. In this embodiment, it is made of copper. Moreover, it is preferable that the surface of the heat dissipation material 7 is plated or coated with a material different from the material for forming the heat dissipation material 7. Since the heat dissipating material 7 is formed entirely of metal as described above, oxidation may occur. However, the above structure can prevent the heat dissipating material 7 from being oxidized. Specifically, it is coated with tin plating or solder resist.

  The thickness of the heat dissipation material 7 is preferably 5 μm or more and 30 μm or less, and more preferably 8 μm or more and 15 μm or less. FIG. 3 is a graph showing the relationship between the thickness of the heat dissipation material 7 and the temperature of the COF 10. From this graph, it is clear that the temperature decrease is most remarkable when the thickness is 8 μm or more and 15 μm or less, and the effect does not increase so much even if the thickness is increased. Further, in order to maintain the thinness of the COF 10, it is preferable that the heat dissipating material 7 is thin. Therefore, the thickness of the heat dissipation material 7 is more preferably 8 μm or more and 15 μm or less. With this configuration, heat dissipation can be improved while maintaining the thinness of the COF 10. In this embodiment, it is 8 μm or 15 μm.

  Further, in order to achieve thinning of the COF 10 and high heat dissipation, the distance in the vertical direction between the semiconductor element 4 and the heat radiating material 7 (the distance “b” shown in FIG. 6A) is 0.1 mm or less. It is preferable that

  The heat dissipating material 7 is preferably formed on the entire back surface of the COF 10. With this configuration, high heat dissipation can be achieved. However, since the COF 10 is bent and mounted as described above, in consideration of the bendability, the COF 10 is located at a position corresponding to a part of the back surface of the COF 10, specifically, the semiconductor element 4 and its periphery on the back surface of the COF 10. Preferably it is formed.

  Specifically, the COF is provided with a bending prohibited area around the semiconductor element 4 in order to use the product safely. In the COF 10, the vertical width 7A of the heat radiating material 7 is set to the vertical width of the prohibited area −0.5 mm or more and the vertical width of the prohibited area +0.5 mm or less. In the present embodiment, the vertical width of the prohibited area is the same. With this configuration, the heat dissipation can be improved without impairing the bendability.

  In COF, since the punched portion is punched and mounted, in COF10, the lateral width 7B of the heat radiating material 7 has a margin of 0.5 mm or more on both sides from the punched portion 1c (see “d1” in FIG. 1A). Area) to set. In this embodiment, d1 = 1 mm. With this configuration, it is possible to improve heat dissipation without causing any trouble in punching during mounting.

  In this embodiment, since the semiconductor element 4 has a rectangular shape, the heat radiating material 7 has a rectangular shape according to the shape, and is not limited thereto, and may be, for example, a square shape.

  Next, as the most notable point in the present embodiment, the heat dissipating material 7 has an opening (first opening) o1 at a position corresponding to the central portion of the semiconductor element 4, and the position of the semiconductor element 4. An opening (second opening) o2 is provided at a position corresponding to the alignment mark portion. The openings o1 and o2 are holes that penetrate the insulating film 1. The wiring 2 is formed in the same manner as the wiring 102 of the COF 110 shown in FIG. 7B, and is not formed at positions corresponding to the openings o1 and o2.

  With this opening o1, it can be confirmed whether or not the sealing resin 6 is appropriately filled through the transparent insulating film 1. Further, the temperature of the semiconductor element 4 can be measured by bringing a thermocouple into contact with the opening o1. In addition, since the alignment mark portion of the semiconductor element 4 can be observed through the opening o2, it can be confirmed whether the semiconductor element 4 is appropriately arranged. Thus, quality / manufacturing process management can be performed by having the opening parts o1 and o2 in the heat dissipation material 7. In this embodiment, both the openings o1 and o2 are provided in the heat dissipation material 7, but this configuration is merely an example, and only one of the openings o1 and o2 may be provided.

  It is preferable that the opening o1 has a vertical width o1A of the semiconductor element 4 of −0.1 mm or less and a horizontal width o1B of the semiconductor element 4 of −0.1 mm or less. The opening o2 preferably has a vertical width of 0.05 mm to 0.15 mm and a horizontal width of 0.05 mm to 0.15 mm. In the present embodiment, the opening o1 has a vertical width o1A of 0.8 mm and a horizontal width o1B of 2.0 mm. In addition, the opening o2 has a square shape and a side of 116 um. The size of the opening o2 is such that the size of the alignment mark of the semiconductor element 4 is 96 μm (“d3” in FIG. 1A), and the size is provided with a margin of 10 μm vertically and horizontally. Is due to being. A method of forming the openings o1 and o2 is general etching or the like.

  In addition, although the shape of the opening o1 is a rectangular shape in the present embodiment, the shape is not limited to this, and may be a square shape, for example. Similarly, the shape of the opening o2 is not limited, but is preferably a square shape as in the present embodiment from the viewpoint of alignment accuracy.

[Embodiment 2]
Another embodiment of the present invention will be described below with reference to FIG.

  FIG. 4 shows the COF 10a according to the present embodiment, FIG. 4 (a) and FIG. 4 (c) show the back surface, and FIG. 4 (b) shows the state in FIG. 4 (a) and FIG. 4 (c). The area “c” is shown enlarged. For convenience of explanation, members having the same functions as those of the members of the COF 10 are assigned the same member numbers, and explanations thereof are omitted. Only the points that are fundamentally different from the COF 10 will be described.

  The COF 10a further includes a slit 8 as shown in FIG. The slit 8 will be described in detail below.

  In the conventional COF 110, when the bump electrode 104a of the semiconductor element 104 is bonded to the wiring 102, the COF 110 is disposed on a stage 115 heated to about 120 ° C. as shown in FIG. A heating tool 117 heated to about 400 ° C. is placed on 104 and pressed to apply pressure, and this state is maintained for about 1 second, and bonding is performed by thermocompression bonding.

  At this time, the heat dissipating material 107 in the area “A” in the figure is fixed by the stage 115 and the heating tool 117, but the heat dissipating material 107 in the area “B” in the figure is fixed by them. Therefore, due to the thermal expansion of the stage 115 and the heating tool 117, it extends in the long side direction (the direction of the dotted arrow in the figure). Further, this phenomenon can be considered to be the same in other heating processes such as resin curing after resin sealing. As a result, the insulating film 101 is stretched along with the expansion of the heat radiating material 107, causing a problem that the wiring 102 is deformed or disconnected. FIG. 7B is a plan view of the surface of the semiconductor element 104 on which the bump electrode 104a is provided. As described above, since the heat dissipating material 107 and the insulating film 101 extend in the long side direction, the deformation or disconnection of the wiring 102 on the short side (region “C” in the drawing) of the semiconductor element 104 is noticeable. It was.

  The slit 8 is for solving the above-described problems. The slit 8 allows the bump electrode 4a of the semiconductor element 4 to be wired 2 without impairing the function of the heat radiating material 7 as a heat radiating material. The thermal expansion due to a heating process such as thermocompression bonding and resin curing after resin sealing is alleviated to prevent elongation, and as a result, deformation or disconnection of the wiring 2 is prevented.

  The slit 8 is preferably provided at a position corresponding to the semiconductor element 4 and the periphery thereof in the heat radiating material 7 basically because of its function. Further, it is preferable to provide the semiconductor elements 4 so as to be symmetrical with respect to the center lines L1 and L2 (one example). With the above configuration, the slits 8 are provided in the vicinity of the semiconductor element 4 and evenly in the vicinity of the semiconductor element 4, so that the thermal expansion can be reliably relaxed, and as a result, the wiring 2 can be reliably connected. Deformation or disconnection can be prevented. In addition, a first slit parallel to one side of the semiconductor element 4 is provided, and a horizontal distance between the first slit and a bump end surface on one side of the semiconductor element 4 closest to the first slit is 0. It is preferable that it is 1 mm or more and 2.0 mm or less. According to this configuration, the first slit is provided so as to cross the expansion path of the heat radiating member 7, and thus is very effective in reducing the thermal expansion. Therefore, the thermal expansion is more reliably reduced. As a result, deformation or disconnection of the wiring 2 can be prevented more reliably.

  The illustrated slit 8 is formed corresponding to an example in which the heat radiating material 7 extends particularly in the long side direction by a heating process such as thermocompression bonding or resin curing. Many slits are provided radially on the side. More specifically, as shown in FIG. 4 (b), areas 7a, 7b, 7c, 7d (not shown) are formed in the heat dissipating material 7, and each of the areas is formed. A slit is provided in the region so that the bump electrode 4a on one side of the semiconductor element 4 is included (for example, the region “7a” includes the bump electrode 4a on the short side of the semiconductor element 4). .

  The illustrated slit 8 has a slit 8a (FIG. 4B) as the first slit. The horizontal distance (“d2” in FIG. 4B) between the slit 8a and the bump end face on the short side of the semiconductor element 4 closest to the slit 8a is 0.5 mm. Further, the illustrated slit 8 may be formed with a cut so as not to separate the heat radiating material 7 in consideration of heat dissipation, as shown in FIG. As shown to c), you may form so that the thermal radiation material 7 may be isolate | separated.

  Moreover, it is preferable that the width | variety of the slit 8 is 0.02 mm or more and 1.0 mm or less. With this configuration, it is possible to prevent the wiring from being deformed or disconnected without damaging the heat dissipation of the heat dissipation material 7 by forming the slit 8 small. In this embodiment, it is formed with 0.05 mm. The formation method of the slit 8 is general etching.

  The position and shape of the slit 8 described above are merely examples. The expansion of the heat radiating material is due to the presence of locations that cannot be fixed due to differences in the shape and size of the heat radiating plate (the stage 115 and the heating tool 117 shown in FIG. 7A) and the heat radiating plate. Since this occurs (and this phenomenon may occur in a heating process such as resin curing after resin sealing), the forms vary. Therefore, the positions and shapes of the slits for avoiding the extension of the heat radiating plate are various.

[Embodiment 3]
Still another embodiment of the present invention will be described with reference to FIG.

  FIG. 5 shows the COF 10b according to the present embodiment, FIG. 5 (a) shows the back surface thereof, and FIG. 5 (b) shows an enlarged view of a region “e” in FIG. 5 (a). . For convenience of explanation, members having the same functions as those of the members of the COF 10a are assigned the same member numbers, and description thereof is omitted. In addition, only differences from the COF 10, 10a will be basically described.

  The COF 10 b is further provided with a heat dissipating material (second heat dissipating member) 9 composed of the heat dissipating materials 9 a and 9 b in contact with the heat dissipating material 7 on the long side of the heat dissipating material 7 with respect to the configuration of the COF 10 a. The heat dissipating material 9 can be formed with the same configuration (material, thickness, range thereof, etc.) as the heat dissipating material 7, but the shape is different.

  As shown in FIG. 5B, the heat dissipating material 9 has a structure in which a plurality of square-shaped openings f are arranged vertically and horizontally while maintaining a certain distance from the adjacent openings f. The opening f is preferably arranged with a side of 50 μm or more and 200 μm or less and a distance of 50 μm or more and 200 μm or less from the adjacent opening f. Moreover, it is preferable that the opening f is arranged so that one side thereof is parallel to a line segment having an angle of 35 ° or more and 55 ° or less with a side in the long side direction of the heat dissipation material 9. In the present embodiment, the distance between one side of the opening f and the adjacent opening f is 100 μm, and the angle is 45 °.

  Moreover, the horizontal width of the heat dissipating material 9 is set in the same manner as the horizontal width of the heat dissipating material 7, and the position of each end in the vertical direction is from the position corresponding to the end on the back surface of the insulating film 1 of the solder resist 3. It is preferable to set the inner side 0.5 mm or more. In the present embodiment, the width of the heat dissipating material 9 is the same as the width 7B of the heat dissipating material 7, and the positions (9aA, 9bA) of the end portions in the vertical direction are on the back surface of the insulating film 1 of the solder resist 3 (FIG. “3a” in a) and 0.5 mm and 0.5 mm respectively from the position corresponding to the end (“da3” and “db3” in FIG. 5A). The formation of the heat dissipation material 9 as described above is performed simultaneously with the heat dissipation material 7 by general sputtering, photolithography, etching, or the like.

  With the above configuration, the COF 10b can increase the area of the heat dissipation material as compared with the COF 10a. Moreover, the heat radiating material 9 has the opening part f, and it is easy to bend | fold compared with the heat radiating material 7 with which the heat radiating material is provided in the whole. That is, the COF 10b can further improve the heat dissipation while securing the bendability as compared with the COF 10a. Further, by arranging the openings f of the heat dissipating material 9 at an angle as described above, elongation due to thermal expansion can be suppressed.

  The heat dissipating material 9 is not limited to the above configuration, and the same effect can be obtained even if the opening f is circular. In this case, it is preferable that the diameters of the circular openings are 50 μm or more and 200 μm or less and are arranged at a distance of 50 μm or more and 200 μm or less from the adjacent openings.

[Embodiment 4]
Still another embodiment of the present invention will be described with reference to FIG.

  The COF 10c according to the present embodiment has the same structure as the COF 10 shown in the first embodiment, and in addition to that, at a position facing the second opening o2 on one surface of the insulating film 1, A dummy wiring 15 is provided.

  FIG. 6 shows a COF 10c according to the present embodiment, and FIG. 6A shows an enlarged region corresponding to the “a” region of the COF 10 shown in FIG. The wiring 15 is shown. 6 (b) to 6 (d) similarly show an enlarged region corresponding to the region "a", and particularly show a modification of the dummy wiring 15. FIG. For convenience of explanation, members having the same functions as those of the members of the COF 10 are assigned the same member numbers, and explanations thereof are omitted. Only the points that are fundamentally different from the COF 10, that is, only dummy wiring will be described.

  As shown in FIG. 6A, the dummy wiring 15 has a square shape, and the square is in the shape of an alignment mark for the semiconductor element 4 and is slightly larger than the alignment mark. It has a shape. The size is relatively determined from the size of the second opening o2 and the size of the alignment mark of the semiconductor element 4, but in this embodiment, the opening o2 has a square shape and one side thereof is Since the size of the alignment mark of the semiconductor element 4 is 96 μm (see Embodiment 1), one side is 106 μm. Further, “d4” in FIG. 6A is set to 5 μm. The dummy wiring 15 is formed together when the wiring 2 is formed. As a formation method thereof, a copper film is formed using a known plating method, and then shaped using a known photolithography method. However, it is formed using the same mask during the photolithography. The wiring 2 and the dummy wiring 15 are not electrically connected.

  Since the dummy wiring 15 is formed using the same mask when the wiring 2 is formed as described above, the positional relationship between the dummy wiring 15 and the alignment mark of the semiconductor element 4 is observed from the second opening o2. Specifically, as shown in FIG. 6A, the alignment mark can be observed while maintaining a certain distance (distance of “d4”) in the perforated portion of the dummy wiring 15, so that the semiconductor The device 4 has a function of confirming that the element 4 and the wiring 2 are arranged so as to be joined without displacement ((1) above). Therefore, when the wiring 2 and the semiconductor element 4 are properly arranged, the dummy wiring 15 observes the alignment mark while maintaining a certain distance (the distance “d4”) in the penetration portion of the dummy wiring 15. It is formed to be able to. With this dummy wiring 15, like the COF 10, the alignment mark can be observed from the second opening o 2, thereby confirming that the arrangement of the semiconductor element 4 and the wiring 2 is appropriate. The confirmation can be performed.

  Note that the shape of the dummy wiring 15 is not limited to that described above, and the distance “d4” may not be secured, and the dummy wiring 15 may be formed in the same size as the alignment mark. . In this case, it can be confirmed that the arrangement of the semiconductor element 4 and the wiring 2 is appropriate by observing that the punched portion of the dummy wiring 15 and the alignment mark coincide with each other. In the present embodiment, the COF 10c has the same structure as the COF 10. However, if the opening o2 is provided, the COF 10c has the same structure as the COF 10a, 10b described in the second and third embodiments. Needless to say, you can do it.

  Next, modified examples of the dummy wiring 15 will be described with reference to FIGS. 6B to 6D.

  The dummy wiring 15a shown in FIG. 6B has a square shape and one side thereof is smaller than “d3” (see FIG. 1A) in the alignment mark, and the wiring 2 and the semiconductor element 4 are connected to each other. If the arrangement is appropriate, the center of the dummy wiring 15a and the center of the alignment mark are formed so as to substantially coincide with each other. Since the dummy wiring 15a can be observed that the center of the dummy wiring 15a is substantially coincident with the center of the alignment mark, it can be confirmed that the semiconductor element 4 and the wiring 2 are appropriately arranged.

  In addition, the dummy wiring 15b shown in FIG. 6C has four wirings arranged around the alignment mark so as to be point-symmetric with respect to the center of the alignment mark. It can be confirmed that the arrangement of the semiconductor element 4 and the wiring 2 is appropriate by observing that the point where the extended lines of these four wirings intersect with the center of the alignment mark.

  Further, in the dummy wiring 15c shown in FIG. 6D, the alignment mark is also formed in an L shape, and the alignment mark and the dummy are arranged if the arrangement of the wiring 2 and the semiconductor element 4 is appropriate. In other words, the alignment mark and the dummy wiring 15c are formed so as to be line-symmetric or point-symmetric with respect to an arbitrary line or point so that the region surrounded by the wiring 15c has a substantially square shape. Yes. Since the dummy wiring 15c can be observed to have a square shape in the area surrounded by the alignment mark and the dummy wiring 15c, in other words, the alignment mark and the dummy wiring 15c can be connected to any line or point. Can be observed that the semiconductor element 4 and the wiring 2 are appropriately arranged.

  As described above, it is preferable that the dummy wiring has a positional relationship with the alignment mark only by looking at the appearance. Note that the configuration of the dummy wiring is not limited to the above example. Other than that, for example, the same shape as the alignment mark is used, and the arrangement of the semiconductor element 4 and the wiring 2 is appropriate due to their overlapping. It is good also as a structure which confirms this. When either or both of the insulating film 1 and the semiconductor element 4 are expanded or contracted by heat or the like, the alignment mark or the dummy wiring is taken into consideration when the expansion or contraction is taken into consideration. Is preferably arranged.

  The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope shown in the claims, and embodiments obtained by appropriately combining technical means disclosed in different embodiments. Is also included in the technical scope of the present invention.

  The present invention can be suitably used for a COF having a heat dissipating material on the back surface, can observe the state of the semiconductor device from the back surface, can perform quality / manufacturing process control, and can perform the thermal expansion of the heat dissipating material. It can be relaxed to prevent deformation or disconnection of the wiring.

1A and 1B show a COF according to an embodiment of the present invention, in which FIG. 1A is a plan view of the back surface thereof, and FIG. 1B is an enlarged view of a region “a” in FIG. It is a figure which shows the structure of a part of display apparatus using COF shown in FIG. It is a graph which shows the relationship between the thickness of a thermal radiation material, and the temperature of COF shown in FIG. 1 provided with the thermal radiation material. FIGS. 4A and 4B show a COF according to another embodiment of the present invention, in which FIGS. 4A and 4C are plan views of the back surface, and FIG. 4B is a diagram “c” in FIGS. FIG. 10A and 10B show a COF according to still another embodiment of the present invention, in which FIG. 5A is a plan view of the back surface thereof, and FIG. 5B is an enlarged view of a region “e” in FIG. 10 shows a COF according to still another embodiment of the present invention, wherein (a) to (d) are enlarged views of a region corresponding to the region “a” shown in FIG. 1. 1A and 1B show a COF according to a conventional technique, in which FIG. 1A is a cross-sectional view thereof, and FIG. 1B is a plan view of a surface provided with bump electrodes of a semiconductor element.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Insulating film 1c Punching part 2 Wiring 3, 3a Solder resist 4 Semiconductor element 7 Heat dissipation material (1st heat dissipation member)
8 Slit 9, 9a, 9b Heat dissipation material (second heat dissipation member)
10, 10a, 10b COF (semiconductor device) (display device drive module)
15, 15a, 15b, 15c Dummy wiring 30 Display device o1 Opening (first opening)
o2 opening (second opening)
L1, L2 center line

Claims (21)

An insulating film;
Wiring provided on one surface of the insulating film;
A semiconductor element bonded to the wiring;
A sealing resin filled in the vicinity of the semiconductor element;
In a semiconductor device comprising a heat dissipating member provided on a surface opposite to one surface of the insulating film,
The heat dissipating member is provided as a first heat dissipating member, and the first heat dissipating member is a hole penetrating to the insulating film, and the state of the semiconductor device on one surface of the insulating film is observed through the insulating film. With an opening that allows
The semiconductor device is characterized in that the wiring is not provided at a position corresponding to the opening.   The opening corresponds to a position corresponding to a central portion of the semiconductor element in the first heat dissipation member as a first opening, and corresponds to a mark portion for alignment of the semiconductor element in the first heat dissipation member as a second opening. 2. The semiconductor device according to claim 1, wherein the semiconductor device is provided at a position where the two or both of the two are located. As the opening, the second opening, or the first opening and the second opening are provided,
A dummy wiring that is formed in the same layer as the wiring using the same mask at a position facing the second opening on one surface of the insulating film and is not electrically connected to the wiring. Provided,
3. The semiconductor device according to claim 2, wherein the dummy wiring is used for confirming a positional relationship between the dummy wiring and the alignment mark of the semiconductor element through the second opening. The first opening has a vertical width of -0.1 mm or less of the semiconductor element, a horizontal width of the semiconductor element -0.1 mm or less,
4. The semiconductor device according to claim 2, wherein the second opening has a vertical width of 0.05 mm to 0.15 mm and a horizontal width of 0.05 mm to 0.15 mm. .   The semiconductor device according to claim 2, wherein a slit is provided in the first heat radiating member.   The said slit is provided in the position corresponded to the said semiconductor element and its periphery in the said 1st heat radiating member so that it may become line symmetrical with respect to the centerline of the said semiconductor element. Semiconductor device.   The semiconductor device according to claim 6, wherein the first heat radiating member is provided only at a position corresponding to the semiconductor element and its periphery on the opposite surface of the insulating film. Around the first heat radiating member, a second heat radiating member is further provided in contact with the first heat radiating member,
The second heat radiating member has a plurality of openings that are square or circular and are holes that penetrate to the insulating film,
8. The semiconductor device according to claim 7, wherein the openings are arranged vertically and horizontally while maintaining a certain distance from adjacent openings. The square openings of the second heat radiating member have one side of 50 μm or more and 200 μm or less, and are arranged with a distance of 50 μm or more and 200 μm or less from the adjacent opening,
9. The circular opening of the second heat radiating member has a diameter of 50 μm or more and 200 μm or less, and is arranged with a distance of 50 μm or more and 200 μm or less from an adjacent opening. A semiconductor device according to 1. The square-shaped opening of the second heat radiating member is arranged so that one side thereof is parallel to a line segment having an angle of 35 ° or more and 55 ° or less with a lateral side of the second heat radiating member,
10. The semiconductor device according to claim 9, wherein the circular openings of the second heat radiating member are arranged at positions where the square openings are provided. The semiconductor device further includes a resist provided to cover the insulating film and part of the wiring,
The width of the second heat radiating member is the same as the width of the first heat radiating member, and the position of each end in the vertical direction corresponds to the end of the resist on the opposite surface of the insulating film. The semiconductor device according to claim 8, wherein the semiconductor device is set to an inner side of 0.5 mm or more.   The vertical width of the first heat radiating member is set between a vertical width of the forbidden range of −0.5 mm or more and a vertical width of the forbidden range of +0.5 mm or less when the semiconductor device is bent and used. The semiconductor device according to claim 7, wherein the semiconductor device is a semiconductor device.   13. The semiconductor device according to claim 12, wherein the lateral width of the first heat radiating member is set at intervals of 0.5 mm or more from both lateral ends of the punched portion of the semiconductor device.   The slit has a first slit parallel to one side of the semiconductor element, and a horizontal distance between the first slit and a bump end surface on one side of the semiconductor element closest to the first slit is: It is 0.1 mm or more and 2.0 mm or less, The semiconductor device as described in any one of Claims 5-13 characterized by the above-mentioned.   The semiconductor according to claim 1, wherein the first heat radiating member or each heat radiating member is made of a material having a thermal conductivity of 10 W / (m · K) or more. apparatus.   The semiconductor device according to claim 1, wherein the first heat radiating member or each heat radiating member is made of copper, aluminum, or SUS.   The semiconductor device according to claim 1, wherein the first heat radiating member or each heat radiating member has a thickness of 5 μm to 30 μm.   18. The semiconductor device according to claim 1, wherein a surface of the first heat radiating member or each heat radiating member is plated or coated with a material different from the heat radiating member.   19. The semiconductor device according to claim 4, wherein a width of the slit provided in the first heat radiating member is 0.02 mm or greater and 1.0 mm or less.   20. The semiconductor device according to claim 1, wherein a vertical distance between the semiconductor element and the first heat radiating member or each heat radiating member is 0.1 mm or less.   21. A display device comprising the semiconductor device according to claim 1 as a display device driving module for driving the display device.

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